Electrostatic wire drawing etching limiting device

Abstract

This invention discloses an electrostatic wire drawing etching limiting device, covering the field of precision micro-machining equipment in industrial and commercial sectors. It includes a vacuum chamber, an integrated electrostatic component, a perforated limiting baffle, and a workpiece to be processed. The integrated electrostatic component is rigidly formed by an upper positive charge storage body, an insulating device, and a lower positive charge storage body. The perforated limiting baffle and the workpiece are fixedly arranged inside the vacuum chamber. Before operation, the integrated electrostatic component, the limiting baffle, and the workpiece are all placed into the vacuum chamber. After the chamber is sealed and evacuated, a certain amount of negative electron particles are filled into the chamber. The upper and lower positive charges form a voltage difference electric field with a stronger upper charge and a weaker lower charge, relying on the insulating device. The negative electrons are attracted by the electric field to form a wire bundle that adheres to the limiting baffle. The wire bundle can only pass through the perforated pattern of the baffle to contact the workpiece surface and complete the etching. After a single batch of etching is completed, the chamber is opened, and a low-cost electron beam isolation protective coating (a low-cost alternative to traditional photoresist) is applied to the etched area of ​​the workpiece. By replacing the limiting baffle with different perforation specifications, the operation can be repeated, allowing for multiple layered etching. This invention eliminates the need for complex supporting equipment in traditional photolithography and laser etching. It has a simple structure and is flexible in modification. In the industrial field, it can be used for etching semiconductor chips and precision metal components. In the commercial field, it can be used for custom precision jewelry and surface texture processing of micro-components. It is suitable for shallow micro-etching operations in multiple industrial and commercial fields.

Description

Technical Field

[0001] This invention belongs to the field of precision micro-machining equipment technology, covering industrial semiconductor manufacturing and precision hardware processing. It is also suitable for commercial customized micro-workpieces and surface etching processing of precision handicrafts, spanning both industrial and commercial application scenarios. Background Technology

[0002] Currently, precision surface etching in the industrial and commercial sectors is mainly divided into two mainstream technologies: industrial photolithography etching and commercial laser etching. Industrial photolithography relies on a complete production line consisting of specialized photoresist, photomasks, and exposure equipment. The unit price of photoresist consumables is high, and the cost of waste liquid treatment is also high, resulting in extremely high costs for small-batch customized production. Commercial laser etching equipment is prone to high-temperature deformation of the workpiece, and the depth of shallow texture processing is difficult to control. Conventional electric field etching equipment has a fixed arrangement of charge components and workpieces, making it impossible to quickly change the etching pattern template. Furthermore, without an insulating layer to regulate the electric field structure, charged particles are prone to random scattering. This makes it unsuitable for industrial mass production and fails to meet the needs of commercial personalized customization, resulting in limitations in applicable scenarios, cumbersome processes, and high consumable costs. Summary of the Invention

[0003] Purpose of the invention To overcome the problems of existing etching equipment having limited application scenarios, high modification costs, and expensive photolithography consumables, an electrostatic wire drawing chip surface etching device is provided. It relies on an integrated electrostatic component with a replaceable hollow baffle to achieve rapid replacement of etching patterns. It uses a low-cost electron beam isolation protective coating to replace expensive photoresist, taking into account both industrial mass production and commercial personalized customization needs. Technical solution

[0004] An electrostatic wire drawing etching limiting device is characterized by comprising a vacuum chamber (1), an upper positive charge storage body (2), a negative electron wire drawing bundle (3), a hollowed-out line limiting baffle (4), a workpiece to be processed (5), an insulating device (6), and a lower positive charge storage body (7); the upper positive charge storage body (2), the insulating device (6), and the lower positive charge storage body (7) are rigidly connected to form an integrated electrostatic assembly that can be moved as a whole; the hollowed-out line limiting baffle (4) and the workpiece to be processed (5) are attached and fixed to each other to form a stationary processing assembly, and the stationary processing assembly and the integrated electrostatic assembly are separately arranged inside the vacuum chamber; the insulating device is fixedly set on the upper end face of the lower positive charge storage body. After the vacuum chamber is sealed, a vacuum is drawn and negative electron particles are filled in. The insulating device separates the upper and lower charges to form a pressure difference electric field. The negative electrons are attracted by the electric field to form a wire drawing bundle. The wire bundle passes through the hollowed-out part of the baffle to complete the etching operation on the surface of the workpiece; after opening the chamber and replacing the limiting baffle of different specifications, the etching process can be repeated. Beneficial effects

[0005] 1. Spanning both industrial and commercial sectors, it can mass-produce semiconductor chips and precision metal parts in industrial settings, and process customized miniature handicrafts and personalized electronic accessories in commercial settings, with a wide range of applications; 2. The integrated electrostatic component achieves overall linkage displacement, eliminating the need to separate the charge structure and simplifying the equipment operation process; 3. The etching pattern can be switched simply by replacing the limit baffle, without modifying the main structure of the equipment, which greatly reduces the production cost of the modified model; 4. Relying on electrostatic self-forming etching wire bundles, the laser generator and exposure optical components are eliminated, and the equipment procurement and maintenance costs are far lower than those of traditional etching equipment; 5. Use a low-cost electron beam isolation protective coating to replace the traditional high-priced photoresist, reducing material input and adapting to long-term mass production; 6. Layered etching mode relies on an isolation and protective coating to protect the processed area, and multiple board changes are used to achieve multi-layer texture superposition processing of the workpiece, expanding the processing dimensions of the workpiece; Attached Figure Description

[0006] Appendix Figure 1 This is a schematic diagram of the overall structure of the electrostatic wire drawing core etching limiting device of the present invention; Numbering on the map: 1-Vacuum cavity, 2- Positive charge storage, 3-Negative electron wire harness, 4- Hollowed-out line limit baffle, 5-Workpiece to be processed 6-Insulation device, 7-Lower positive charge storage body; Upper positive charge storage body, insulation device, and lower positive charge storage body are rigidly fixed as an integrated movable component, and the hollowed-out circuit limiting baffle is fixed to the workpiece to be processed as a stationary component placed in the middle of the cavity. Detailed Implementation

[0007] Example 1: Industrial Scenario - Semiconductor Chip Etching. An integrated electrostatic assembly, chip workpiece, and matching circuit cutout baffle are placed into a vacuum chamber. The sealed chamber is evacuated to a vacuum environment and filled with a fixed amount of negative electron particles. The integrated electrostatic assembly is driven to slowly move, and the electron beam etches the chip surface circuit along the cutout circuit of the baffle. After processing, the cavity is opened and the chip is removed. A low-cost electron beam isolation protective coating is applied to the etched circuit positions. After the coating dries and cures, the cutout baffle of another circuit layer is replaced and placed into the chamber for a second etching. This cycle is repeated to complete the multi-layer circuit processing of the chip.

[0008] Example 2: Commercial Scenario - Metal Jewelry Texture Etching. Small metal jewelry pieces are selected as workpieces to be processed. A personalized patterned hollow baffle is assembled, and the cavity vacuuming, negative electron filling, and electrostatic component scanning etching processes are completed in sequence. After a single texture processing is completed, an electron beam isolation protective coating is applied, the baffle is replaced, and composite patterns are etched to complete the customized jewelry surface texture processing. This is suitable for the commercial customized production of small commodities.

Claims

1. An electrostatic wire drawing and etching limiting device, characterized in that: The assembly includes a vacuum chamber (1), an upper positive charge storage body (2), a negative electron wire bundle (3), a hollowed-out circuit limiting baffle (4), a workpiece to be processed (5), an insulating device (6), and a lower positive charge storage body (7). The upper positive charge storage body, the insulating device, and the lower positive charge storage body are rigidly connected to form an integrated electrostatic assembly capable of overall displacement. The hollowed-out circuit limiting baffle is attached and fixed to the surface of the workpiece to be processed and forms a static processing assembly. The integrated electrostatic assembly and the static processing assembly are jointly arranged inside the vacuum chamber. After the vacuum chamber is sealed, evacuated, and filled with negative electrons, the insulating device forms a differential electric field and causes the negative electrons to form a wire bundle. The wire bundle passes through the hollowed-out part of the baffle to etch the surface of the workpiece. After opening the chamber and replacing the limiting baffle, the etching operation can be repeated.

2. The electrostatic wire drawing etching limiting device according to claim 1, characterized in that: The workpiece to be processed is compatible with any one of the following: industrial semiconductor chips, industrial precision metal components, commercial customized handicrafts, and micro electronic accessories, and is suitable for industrial production and commercial customized processing scenarios.

3. The electrostatic wire drawing and etching limiting device according to claim 1, characterized in that: The insulating device is fixedly installed on the upper surface of the lower positive charge storage body, and forms a pressure difference electric field through insulation, where the electric field attraction of the upper positive charge is greater than that of the lower positive charge.

4. The electrostatic wire drawing and etching limiting device according to claim 1, characterized in that: After a batch of workpieces is etched, a low-cost electron beam isolation and protection coating is applied to the etched area of ​​the workpiece. The coating is used to block the negative electron beam and protect the processed area. After replacing the limiting baffle with different hollow patterns, the assembly is put into the cavity again and vacuumed to achieve layered etching of multi-layer patterns on the workpiece.

5. The electrostatic wire drawing and etching limiting device according to claim 4, characterized in that: The electron beam isolation protective coating is prepared using inexpensive alternative raw materials and is used to replace traditional semiconductor photoresist.

6. The electrostatic wire drawing and etching limiting device according to claim 1, characterized in that: The vacuum chamber is an openable and sealed structure used for picking up and placing integrated electrostatic components, limiting baffles, and workpieces to be processed.

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