Crystal growth furnace for LED sapphire epitaxial substrate
By designing an automated scraper system, the problem of low efficiency in cleaning waste in the crucible after sapphire crystal growth was solved, achieving automated and efficient cleaning, reducing manual operation, and improving production efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANDONG QIANYUAN SEMICON TECH CO LTD
- Filing Date
- 2026-06-01
- Publication Date
- 2026-07-21
AI Technical Summary
In existing technologies, cleaning the waste layer inside the crucible after sapphire crystal growth relies on manual operation, which is inefficient and labor-intensive.
A crystal growth furnace for LED sapphire epitaxial substrates was designed. It uses a steering motor, an electric telescopic rod and a geared motor to drive the lower and side scrapers to automatically enter the crucible for rotation and scraping. The furnace also automatically cleans up waste materials by generating impact vibrations through the striking column and wedge block.
It enables efficient cleaning of waste materials inside the crucible without manual entry into the furnace, improving cleaning efficiency, preventing the shovel from jamming, and enhancing waste cleaning capabilities.
Smart Images

Figure CN122428367A_ABST