Semiconductor refrigeration device

Abstract

The application provides a semiconductor refrigeration device. The semiconductor refrigeration device comprises a first heat exchange member connected to a cooling object through a first pipeline; a second heat exchange member located on one side of the first heat exchange member and connected to a first cold source; a first semiconductor refrigeration sheet located between the first heat exchange member and the second heat exchange member, wherein one side of the first semiconductor refrigeration sheet facing the first heat exchange member is provided with a first metal substrate, one side of the first semiconductor refrigeration sheet facing the second heat exchange member is provided with a second metal substrate, and at least one first heat conduction member is located between the first heat exchange member and the first metal substrate and / or between the second heat exchange member and the second metal substrate, wherein the first heat conduction member comprises an indium sheet.

Description

Technical Field

[0001] This invention relates to the field of semiconductor refrigeration technology, and more specifically to a semiconductor refrigeration device. Background Technology

[0002] A thermoelectric cooler is a solid-state cooling device based on the Peltier effect. It consists of multiple pairs of P- and N-type semiconductor particles arranged in series, packaged together, connected to electrodes, and energized. Electrons transition from the P-type semiconductor to the N-type semiconductor, absorbing heat on one side to form a cold junction and releasing heat on the other side to form a hot junction. Due to its advantages such as no refrigerant, no moving mechanical parts, high temperature control accuracy, fast response speed, small size, and low noise, thermoelectric coolers are widely used in cooling devices for precision instruments, medical equipment temperature control, and laboratory temperature control.

[0003] In existing technologies, the semiconductor refrigeration chips in the aforementioned refrigeration devices often use ceramic substrates with insulating properties as their substrates. However, the thermal conductivity, thickness, and weight of the ceramic substrates all limit the thermal conductivity of the semiconductor refrigeration chips to some extent. Meanwhile, the industry commonly applies thermal grease to the interface between the semiconductor refrigeration chip and the heat exchange components to expel air and reduce thermal resistance. However, the thermal conductivity of thermal grease is not outstanding, and long-term alternating hot and cold operating conditions can easily cause the grease to dry, crack, flow, age, and experience performance degradation, leading to increased interfacial thermal resistance and a decrease in the refrigeration efficiency of the refrigeration device.

[0004] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a semiconductor refrigeration device to improve the thermal conductivity of its internal semiconductor refrigeration chip, optimize the thermal resistance and durability of the bonding interface between the refrigeration chip and the heat exchange component, thereby improving the service life and thermal conductivity of the semiconductor refrigeration device. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, this invention provides a semiconductor refrigeration device. By replacing the ceramic substrate in contact with the semiconductor particles in the semiconductor refrigeration chip inside the device with a metal substrate, and using indium foil as the thermally conductive interface medium to fill the gap between the semiconductor refrigeration chip and the heat exchange component, this invention can improve the efficiency of heat exchange between the hot and cold ends of the refrigeration chip and the outside environment by utilizing the high thermal conductivity of the metal substrate. Furthermore, by utilizing the high thermal conductivity, good stability, and ductility of indium foil, it can improve the heat exchange efficiency between the refrigeration chip and the heat exchange component while helping to expel air at the contact point, further reducing the thermal resistance of the thermal interface. Moreover, due to its good stability, indium foil can withstand alternating hot and cold operating conditions and can maintain its excellent performance during long-term use, ultimately achieving a simultaneous improvement in the thermal conductivity and service life of the semiconductor refrigeration device.

[0007] Specifically, the semiconductor cooling device provided according to the first aspect of the present invention includes: a first heat exchanger connected to a cooling object via a first pipe; a second heat exchanger located on one side of the first heat exchanger and connected to a first cold source; a first semiconductor cooling chip located between the first heat exchanger and the second heat exchanger, wherein the first semiconductor cooling chip has a first metal substrate on its side facing the first heat exchanger and a second metal substrate on its side facing the second heat exchanger; and at least one first thermal conductive element located between the first heat exchanger and the first metal substrate, and / or between the second heat exchanger and the second metal substrate, wherein the first thermal conductive element includes an indium sheet.

[0008] Furthermore, in some embodiments of the present invention, the first heat-conducting element further includes a liquid metal layer, wherein the liquid metal layer is located between the first heat exchange element and the indium sheet, and / or the liquid metal layer is located between the indium sheet and the first metal substrate, and / or the liquid metal layer is located between the second metal substrate and the indium sheet, and / or the liquid metal layer is located between the indium sheet and the second heat exchange element.

[0009] Furthermore, in some embodiments of the present invention, the liquid metal layer includes a gallium-based liquid metal layer, wherein the gallium-based liquid metal layer includes a gallium indium tin alloy layer.

[0010] Furthermore, in some embodiments of the present invention, a first antioxidant layer is provided on the surface of the first metal substrate in contact with the indium sheet, and / or a second antioxidant layer is provided on the surface of the second metal substrate in contact with the indium sheet, wherein the first antioxidant layer and / or the second antioxidant layer are formed by nickel plating.

[0011] Furthermore, in some embodiments of the present invention, the first metal substrate includes a first insulating film layer disposed on the side of the first metal substrate facing the second metal substrate; and the second metal substrate includes a second insulating film layer disposed on the side of the second metal substrate facing the first metal substrate.

[0012] Furthermore, in some embodiments of the present invention, the first metal substrate and / or the second metal substrate are made of copper, aluminum, silver, gold, or an alloy thereof.

[0013] Furthermore, in some embodiments of the present invention, the semiconductor cooling device provided according to the first aspect of the present invention includes a plurality of first semiconductor cooling chips, wherein each of the first semiconductor cooling chips is arranged in an array between the first heat exchanger and the second heat exchanger.

[0014] Furthermore, in some embodiments of the present invention, the semiconductor cooling device provided according to the first aspect of the present invention further includes: a third heat exchanger located on the side of the first heat exchanger away from the second heat exchanger and connected to a second cold source; a second semiconductor cooling chip located between the first heat exchanger and the third heat exchanger, wherein the second semiconductor cooling chip has a third metal substrate on the side facing the first heat exchanger and a fourth metal substrate on the side facing the third heat exchanger; and at least one second heat-conducting element located between the first heat exchanger and the third metal substrate, and / or between the third heat exchanger and the fourth metal substrate, wherein the second heat-conducting element includes an indium sheet.

[0015] Furthermore, in some embodiments of the present invention, the semiconductor cooling device provided according to the first aspect of the present invention further includes: at least one temperature sensor for measuring the temperature on each metal substrate; and a controller configured to: adjust the power supply parameters on the power supply connected to the semiconductor cooling chip and / or adjust the operating parameters of each heat exchanger according to the temperature signal fed back by the temperature sensor.

[0016] Furthermore, in some embodiments of the present invention, the first heat exchanger includes a first water-cooled cavity, the first pipe includes a first water pipe and connects the first water-cooled cavity to the object being cooled, the second heat exchanger includes a second water-cooled cavity, the first cold source includes a water-cooled source, and the second water-cooled cavity is connected to the water-cooled source through a second water pipe.

[0017] Furthermore, in some embodiments of the present invention, the semiconductor cooling device provided according to the first aspect of the present invention further includes: a pressing mechanism for providing pressure to the first heat-conducting element to fully fill the gap between the first heat exchange element and the first semiconductor cooling chip, and / or the gap between the second heat exchange element and the first semiconductor cooling chip. Attached Figure Description

[0018] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0019] Figure 1 A schematic diagram of a semiconductor cooling device according to some embodiments of the present invention is shown.

[0020] Figure 2 A partially enlarged cross-sectional schematic diagram of a semiconductor cooling device provided according to some embodiments of the present invention is shown.

[0021] Figure 3 A top view schematic diagram of another semiconductor cooling device provided according to some embodiments of the present invention is shown.

[0022] Figure 4 A side view of a semiconductor cooling device according to some embodiments of the present invention is shown.

[0023] Figure label: First heat exchanger 11 Second heat exchanger 12 First Semiconductor Cooler 13 First heat-conducting component 14 Third heat exchanger 15 Second semiconductor cooling chip 16 Second heat-conducting component 17 Clamping mechanism 18 First water inlet 111 First outlet 112 Second water inlet 121 Second outlet 122 Detailed Implementation

[0024] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0025] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0026] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0027] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0028] In existing technologies, semiconductor particles in an energized state must maintain electrical insulation from the external environment. Therefore, the industry tends to use ceramic substrates as the substrates for semiconductor refrigeration chips to prevent short circuits. However, the thermal conductivity, thickness, and weight of ceramic substrates limit the thermal conductivity of semiconductor refrigeration chips to some extent. Simultaneously, due to the materials of the refrigeration chip and heat exchange components inside the semiconductor refrigeration device, microscopic gaps naturally exist at their interface. Air has a low thermal conductivity, and air trapped in these gaps increases interfacial thermal resistance, reducing the heat exchange efficiency between the refrigeration chip and the heat exchange components. Therefore, the industry commonly applies thermal grease to the interface to expel air and reduce thermal resistance. However, the thermal conductivity of thermal grease is not outstanding, and long-term alternating hot and cold operating conditions can easily cause the grease to dry out, powder, crack, and experience performance degradation, losing its ability to fill the microscopic gaps at the interface. This results in increased interfacial thermal resistance and a decrease in the cooling efficiency of the semiconductor refrigeration device.

[0029] To overcome the aforementioned deficiencies in the prior art, this invention provides a semiconductor refrigeration device. By replacing the ceramic substrate in contact with the semiconductor particles in the semiconductor refrigeration chip inside the device with a metal substrate, and using indium foil as the thermally conductive interface medium to fill the gap between the semiconductor refrigeration chip and the heat exchange component, this invention can improve the efficiency of heat exchange between the hot and cold ends of the refrigeration chip and the outside environment by utilizing the high thermal conductivity of the metal substrate. Furthermore, by utilizing the high thermal conductivity, good stability, and ductility of indium foil, it can improve the heat exchange efficiency between the refrigeration chip and the heat exchange component while helping to expel air at the contact point, further reducing the thermal resistance of the thermal interface. Moreover, due to its good stability, indium foil can withstand alternating hot and cold operating conditions and can maintain its excellent performance during long-term use, ultimately achieving a simultaneous improvement in the thermal conductivity and service life of the semiconductor refrigeration device.

[0030] Please refer to the reference. Figures 1-4 . Figure 1 A schematic diagram of a semiconductor cooling device according to some embodiments of the present invention is shown. Figure 2 A partially enlarged cross-sectional schematic diagram of a semiconductor cooling device provided according to some embodiments of the present invention is shown. Figure 3 A top view schematic diagram of another semiconductor cooling device provided according to some embodiments of the present invention is shown. Figure 4 A side view of a semiconductor cooling device according to some embodiments of the present invention is shown.

[0031] like Figure 1 as well as Figure 2 As shown, the semiconductor cooling device provided by the first aspect of the present invention includes: a first heat exchanger 11, a second heat exchanger 12, a first semiconductor cooling chip 13, and at least one first heat-conducting element 14.

[0032] Furthermore, in some embodiments, the first thermoelectric cooler 13 is located between the first heat exchanger 11 and the second heat exchanger 12, and a first metal substrate is provided on the side of the first thermoelectric cooler 13 facing the first heat exchanger 11, while a second metal substrate is provided on the side facing the second heat exchanger 12. Here, the first metal substrate is the heat-absorbing surface of the thermoelectric cooler, i.e., the cold end, and the second metal substrate is the heat-releasing surface of the thermoelectric cooler, i.e., the hot end.

[0033] Specifically, the first metal substrate includes a first insulating film layer disposed on the side of the first metal substrate facing the second metal substrate, and the second metal substrate includes a second insulating film layer disposed on the side of the second metal substrate facing the first metal substrate. Thus, by providing an insulating film layer on the side of each metal substrate that contacts the semiconductor particles, the present invention can prevent direct electrical contact between the semiconductor particles and the metal substrate by means of the insulating layer, thereby avoiding short circuits in the first semiconductor cooling chip 13 due to the conductivity of the metal substrate during energization, ensuring the smooth operation of the cooling device and preventing damage to the device.

[0034] Furthermore, in some embodiments, the first metal substrate may be made of copper, aluminum, silver, gold, or an alloy of multiples thereof, and the second metal substrate may be made of copper, aluminum, silver, gold, or an alloy of multiples thereof. The thermal conductivity of the copper substrate is approximately 386 W / (m·K), and the thermal conductivity of the aluminum substrate is between 200 and 237 W / (m·K), both of which are far superior to those of the ceramic substrate (thermal conductivity between 20 and 30 W / (m·K)). Thus, by replacing the substrate material in the semiconductor refrigeration chip with metal, the present invention can significantly improve the efficiency of heat exchange between the hot and cold ends of the refrigeration chip and the outside environment, thereby improving the thermal conductivity of the semiconductor refrigeration device.

[0035] Those skilled in the art will understand that the above-described embodiments of using copper, aluminum, silver, gold, or alloys thereof to make metal substrates are merely non-limiting implementations provided by the present invention. They are intended to clearly demonstrate the main concept of the present invention in selecting metal materials with good thermal conductivity to make substrates and to provide a specific solution that is easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0036] Optionally, in other embodiments, the first metal substrate may also be made of beryllium, tungsten, molybdenum or an alloy of more than one thereof, and the second metal substrate may be made of beryllium, tungsten, molybdenum or an alloy of more than one thereof, in order to improve the efficiency of heat exchange between the hot and cold ends of the cooling chip and the outside world, thereby improving the thermal conductivity of the semiconductor cooling device.

[0037] Furthermore, in some embodiments, a first anti-oxidation layer is provided on the surface of the first metal substrate in contact with the first heat-conducting element 14, the first anti-oxidation layer being formed by nickel plating, and / or a second anti-oxidation layer is provided on the surface of the second metal substrate in contact with the first heat-conducting element 14, the second anti-oxidation layer being formed by nickel plating. Thus, by providing an anti-oxidation layer at the contact point between the metal substrate and the heat-conducting element, the present invention can prevent oxidation of the metal substrate, thereby maintaining the physical properties of the semiconductor cooling chip and improving the wettability between the metal substrate and the first heat-conducting element 14, enabling the heat-conducting element to fully adhere to the substrate surface, reducing the thermal resistance at the bonding interface, thereby extending the service life of the semiconductor cooling device and improving its thermal conductivity.

[0038] Those skilled in the art will understand that the above-described embodiments using nickel plating to form an antioxidant layer are merely non-limiting implementations of the present invention, intended to clearly demonstrate the main concept of the present invention in preventing oxidation of the semiconductor cooling chip and reducing the thermal resistance of the bonding interface, and to provide a specific solution that is easy for the public to implement, rather than being intended to limit the scope of protection of the present invention.

[0039] Alternatively, in other embodiments, the first antioxidant layer and / or the second antioxidant layer can also be formed via a palladium plating process, a passivation process, or a vapor deposition plating process to maintain the physical properties of the semiconductor refrigeration chip, thereby extending the service life of the semiconductor refrigeration device.

[0040] In some embodiments, the first heat exchanger 11 is connected to the object to be cooled via a first pipe. Because it is close to the first metal substrate, when the first semiconductor refrigeration chip 13 is energized, the first metal substrate can absorb the heat of the first heat exchanger 11, thereby indirectly achieving the purpose of absorbing the heat of the object to be cooled.

[0041] Furthermore, in some embodiments, the second heat exchanger 12 is located on one side of the first heat exchanger 11. Specifically, it is located on the side of the first heat exchanger 11 close to the first thermoelectric cooler 13 and is connected to the first cold source. Because it is close to the second metal substrate, when the first thermoelectric cooler 13 is energized, the second metal substrate will generate heat, which will be transferred to the first cold source via the second heat exchanger 12 to achieve heat dissipation and prevent heat accumulation.

[0042] Furthermore, in some embodiments, the first heat-conducting element 14 is located between the first heat exchange element 11 and the first metal substrate, and / or the first heat-conducting element 14 is located between the second heat exchange element 12 and the second metal substrate, so as to fill the bonding gap between each heat exchange element and its adjacent metal substrate, thereby improving the thermal conductivity of the semiconductor cooling device.

[0043] Specifically, in some embodiments, the first heat-conducting element 14 can be made of indium sheet. Pure indium has a thermal conductivity of approximately 86 W / (m·K), making it one of the highest thermal conductivity materials among existing welding-grade thermal conductive materials. Its thermal conductivity is significantly better than conventional thermal grease (thermal conductivity between 3 and 8 W / (m·K)). Indium is a highly flexible soft metal with excellent ductility and compressibility. Under assembly preload, it can fully fill the microscopic gaps between the first semiconductor cooling chip 13 and each heat exchange element, forming a near-air-free thermal interface, effectively reducing the thermal resistance of the contact interface. Simultaneously, compared to conventional thermal grease, indium sheet can achieve a thinner thermal interface layer, further reducing interface thermal resistance. Indium has a melting point of approximately 156.6°C, remains solid at conventional refrigeration operating temperatures (0~80°C), and possesses stable and reliable physical properties under long-term alternating hot and cold operating conditions. Specifically, the thickness of the indium sheet is between 0.1 and 0.5 mm to ensure sufficient filling of the interface gaps while avoiding excessive thickness that would increase thermal resistance.

[0044] Thus, by replacing the ceramic substrate in contact with semiconductor particles in the semiconductor refrigeration chip inside the semiconductor refrigeration device with a metal substrate, and using indium foil as the thermally conductive interface medium to fill the gaps between the semiconductor refrigeration chip and each heat exchange component, this invention can improve the efficiency of heat exchange between the hot and cold ends of the refrigeration chip and the outside environment by utilizing the high thermal conductivity of the metal substrate. Furthermore, by utilizing the high thermal conductivity, good stability, and ductility of indium foil, it can improve the heat exchange efficiency between the refrigeration chip and the heat exchange components, while helping to expel air at the joint between the two, further reducing the thermal resistance of the thermal interface. In addition, due to its good stability, indium foil can withstand alternating hot and cold operating conditions and can maintain its excellent performance during long-term use, ultimately achieving a simultaneous improvement in the thermal conductivity and service life of the semiconductor refrigeration device.

[0045] Optionally, in some embodiments, the first heat-conducting element 14 may be an indium-based alloy sheet. By adding a small amount of silver, tin or bismuth elements to the indium sheet to form an indium-based alloy sheet, the present invention can improve its mechanical strength and creep resistance while maintaining the high thermal conductivity of the indium sheet.

[0046] Preferably, in some embodiments, the first heat-conducting element 14 may be an indium-based alloy sheet with a silver content of 3-5%, whose thermal conductivity is maintained at 60-70 W / (m·K), but whose hardness is increased by about 50% compared with pure indium sheet, which is more conducive to maintaining a stable contact interface in the long term.

[0047] Preferably, in some embodiments, the thickness of the indium-based alloy sheet is between 0.08 and 0.3 mm, which is thinner than the indium sheet, thereby further reducing the interfacial thermal resistance.

[0048] Optionally, in some embodiments, the first heat-conducting element 14 further includes a liquid metal layer. Here, the liquid metal layer is a metal layer that is liquid or semi-solid at the assembly temperature, and the liquid metal layer is located on the upper surface and / or lower surface of the indium sheet. Specifically, the liquid metal layer is located between the first heat exchange element 11 and the indium sheet, and / or between the indium sheet and the first metal substrate, and / or between the second metal substrate and the indium sheet, and / or between the indium sheet and the second heat exchange element 12.

[0049] Preferably, in some embodiments, a gallium-based liquid metal layer with a thickness of 0.01-0.05 mm is coated on both the upper and lower surfaces of the indium wafer, thereby forming a composite structure of "solid indium core + liquid metal interface". Here, the gallium-based liquid metal layer is preferably a gallium indium tin alloy layer.

[0050] Those skilled in the art will understand that the above-described embodiment of coating an indium sheet with a gallium-based liquid metal layer is merely a non-limiting implementation of the present invention, intended to clearly demonstrate the main concept of the present invention in further filling the gaps between the indium sheet and adjacent structures, and to provide a specific solution that is easy for the public to implement, rather than being used to limit the scope of protection of the present invention.

[0051] Thus, by adding a liquid metal layer to the upper and / or lower surface of the indium sheet to form a multilayer composite structure with the indium sheet, the present invention can more fully fill the tiny gaps between the first heat-conducting element 14 and the semiconductor cooling chip and / or each heat exchanger through the liquid metal layer, further reducing the contact thermal resistance inside the device, improving the thermal conductivity of the thermal interface layer, and thereby optimizing the thermal conductivity performance of the semiconductor cooling device.

[0052] Furthermore, in some embodiments, the semiconductor cooling device provided by the first aspect of the present invention may include a plurality of first semiconductor cooling chips 13, each first semiconductor cooling chip 13 being arranged in an array between the first heat exchanger 11 and the second heat exchanger 12. Specifically, the cooling chips may be electrically connected in series, in parallel, or in a hybrid series-parallel configuration to accommodate different power supply voltage and current requirements. Thus, by employing an array-type multi-cooling chip layout, the present invention can be applied to application scenarios with high cooling requirements.

[0053] Specifically, in some embodiments, multiple first thermoelectric coolers 13 are arranged in an array to form a rectangular grid array of M rows × N columns, where M ≥ 2 and N ≥ 2. The cold end of each cooler is in contact with the first heat exchange component, and the hot end is in contact with the second heat exchange component. In terms of electrical connection, the first thermoelectric coolers 13 in the same row or column are connected in series to form a branch, and multiple branches are then connected in parallel to the main power supply.

[0054] Continue to refer to Figure 1 as well as Figure 2 In some embodiments, the semiconductor cooling device provided by the first aspect of the present invention further includes a third heat exchanger 15, a second semiconductor cooling chip 16, and at least one second heat-conducting element 17. Here, the second semiconductor cooling chip 16 is located between the first heat exchanger 11 and the third heat exchanger 15, and the second semiconductor cooling chip 16 has a third metal substrate on the side facing the first heat exchanger 11, and a fourth metal substrate on the side facing the third heat exchanger 15. The third heat exchanger 15 is located on the side of the first heat exchanger 11 away from the second heat exchanger 12 and is connected to a second cold source. The second heat-conducting element 17 is located between the first heat exchanger 11 and the third metal substrate, and / or between the third heat exchanger 15 and the fourth metal substrate, and the second heat-conducting element 17 includes an indium sheet.

[0055] Thus, by symmetrically arranging a third heat exchanger 15, a second semiconductor refrigeration chip 16, and at least one second heat-conducting element 17 on the side of the first heat exchanger 11 away from the second heat exchanger 12, the present invention can overcome the area limitation of traditional single-end refrigeration, and simultaneously perform heat exchange at both ends for components that need heat exchange, thereby achieving nearly double the heat exchange power under the same projected area, effectively improving the integration and refrigeration efficiency of the refrigeration device, and thus promoting the development of large-scale integrated refrigeration technology.

[0056] Furthermore, in some embodiments, the first heat exchanger 11 includes a first water-cooled cavity, the first pipe includes a first water pipe and connects the first water-cooled cavity to the object being cooled, the second heat exchanger 12 includes a second water-cooled cavity, the first cold source includes a water-cooled source, and the second water-cooled cavity is connected to the water-cooled source through a second water pipe.

[0057] Optionally, in some embodiments, the third heat exchanger 15 includes a third water-cooled cavity, the second cold source includes a water-cooled source, and the third water-cooled cavity is connected to the second cold source through a third water pipe.

[0058] Specifically, such as Figure 3 As shown, the first water pipe connects to the object being cooled via the first inlet 111 and the first outlet 112 located within the first water-cooling chamber, forming a closed first water circulation loop under the action of the first water pump. During operation, the first semiconductor cooling chip 13 absorbs heat from the coolant inside the first water-cooling chamber. The low-temperature coolant, under the action of the first water pump, flows through the first water pipe and the first outlet 112 to the object being cooled, releasing cooling energy. The released coolant temperature rises and, under the action of the first water pump, flows back to the first water-cooling chamber through the first water pipe and the first inlet 111 for renewed cooling. This completes one full cooling cycle. The object being cooled includes precision instruments or medical equipment.

[0059] Furthermore, the second water pipe is connected to a water cooling source (e.g., a water tank connected to a radiator) through the second inlet 121 and the second outlet 122 located in the second water-cooling cavity, forming a closed second water circulation loop under the action of the second water pump. During operation, the first semiconductor cooling chip 13 releases heat to the coolant inside the second water-cooling cavity. The high-temperature coolant flows to the water cooling source through the second water pipe and the second outlet 122 under the action of the second water pump, releasing heat through the water cooling source. After the coolant temperature drops, it flows back to the second water-cooling cavity through the second water pipe and the second inlet 121 under the action of the second water pump, absorbing heat and heating up again. Thus, a complete heat dissipation cycle is completed. Here, the radiator connected to the water tank can be at least one of an air-cooled radiator, a cooling tower, or a plate heat exchanger.

[0060] Optionally, the third water pipe is connected to the second water cooling source (e.g., a water tank connected to a radiator) through the third inlet and the third outlet of the third water cooling cavity, so as to form a closed third water circulation loop under the action of the third water pump. During operation, the first semiconductor cooling chip 13 releases heat to the coolant inside the third water cooling cavity. The high-temperature coolant flows to the water cooling source through the third water pipe and the third outlet under the action of the third water pump, so as to release heat through the water cooling source. After the coolant temperature drops, it flows back to the third water cooling cavity through the third water pipe and the third inlet under the action of the third water pump, and absorbs heat and heats up again. In this way, a complete heat dissipation cycle is completed.

[0061] Thus, by using independent water circulation loops for heat exchange at both the hot and cold ends of the semiconductor cooling chip, this invention not only avoids direct heat exchange between the hot and cold ends to reduce unnecessary cooling efficiency loss, but also balances the heat exchange methods at both ends, avoids performance imbalance problems caused by mismatch in heat exchange efficiency at both ends, and ensures efficient heat dissipation at both ends.

[0062] Those skilled in the art will understand that the above-described embodiment, in which water cooling heat exchange is used at both the hot and cold ends of the refrigeration chip, is merely a non-limiting implementation method provided by the present invention. It is intended to clearly demonstrate the main concept of the present invention and to provide a specific solution that is easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0063] Optionally, in other embodiments, the first heat exchanger 11 includes a first air-cooled cavity, the first pipe includes a first air pipe and connects the first air-cooled cavity to the object being cooled, the second heat exchanger 12 includes a second water-cooled cavity, the first cold source includes a water-cooled source, and the second water-cooled cavity is connected to the water-cooled source through a second water pipe. Specifically, heat exchange fin arrays can be installed on the side of the first metal substrate and the second metal substrate away from the semiconductor particles, and a fan can be used to achieve air cooling.

[0064] Optionally, in other embodiments, the first heat exchanger 11 includes a first water-cooled cavity, the first pipe includes a first water pipe and connects the first water-cooled cavity to the object being cooled, the second heat exchanger 12 includes a second air-cooled cavity, the first cold source includes an air-cooled source, and the second air-cooled cavity is connected to the air-cooled source through a second air pipe.

[0065] Furthermore, in some embodiments, the semiconductor cooling device provided by the first aspect of the present invention further includes at least one temperature sensor and a controller. Here, the temperature sensor may be a PT100 platinum resistance temperature sensor or an NTC thermistor, and at least includes a first temperature sensor disposed on the surface of the first heat exchanger 11 and a second temperature sensor disposed on the surface of the second heat exchanger 12, for measuring the temperature on each metal substrate. The controller may be implemented using a microcontroller, DSP, or PLC, and is configured to: adjust the power supply parameters on the power supply connected to the semiconductor cooling chip according to the temperature signal fed back by the temperature sensor, and / or adjust the operating parameters of each heat exchanger.

[0066] Specifically, the controller is configured to: read the surface temperature of the first heat exchanger 11 detected by the first temperature sensor in real time, compare it with the target temperature set by the user, calculate the required operating current (or operating voltage) of the thermoelectric cooler through a PID control algorithm, and output a corresponding control signal to adjust the output of the power supply; and read the surface temperature of the second heat exchanger 12 detected by the second temperature sensor in real time. When the temperature exceeds a preset safety threshold (e.g., 30~50℃, preferably 40℃), the controller increases the heat exchange power of the second heat exchanger 12 to accelerate heat dissipation. When the system enters standby or low load state, the controller can reduce the operating current of the thermoelectric cooler and correspondingly reduce the heat exchange power on each heat exchanger to achieve energy-saving operation.

[0067] Optionally, in other embodiments, multiple first thermoelectric coolers 13 are arranged in an array, each first thermoelectric cooler 13 is provided with an independent electronic switch (such as a MOSFET power semiconductor switch or a relay) and an independent drive circuit, and the output terminal of the controller is connected to the control electrode of each electronic switch. Here, the controller is also configured to output a PWM (pulse width modulation) signal or an on / off command based on the real-time temperature feedback from the temperature sensor, and independently control the duty cycle or operating current of each first thermoelectric cooler. Specifically, when it is necessary to achieve strong cooling in a high heat flux density area, the controller can increase the drive power of one or more thermoelectric coolers at the corresponding position; when it is necessary to reduce the cooling effect in a low heat flux density area, the controller can reduce the drive power of the corresponding thermoelectric cooler or turn off the corresponding thermoelectric cooler to achieve precise regional temperature control.

[0068] Thus, by controlling the cooling capacity of each refrigeration element individually based on real-time temperature feedback, the present invention can achieve differentiated cooling in different regions, overcoming the problem that a single refrigeration element cannot flexibly adapt to non-uniform heat loads, thereby improving the adaptability and reliability of the semiconductor refrigeration device.

[0069] Furthermore, such as Figure 4 As shown, in some embodiments, the semiconductor cooling device provided by the first aspect of the present invention further includes a clamping mechanism 18, which is fixed by a bolt fastening structure, for applying uniform pressure to the first heat-conducting element 14 to fully fill the small gap between the first heat exchange element 11 and the first semiconductor cooling chip 13, and / or the small gap between the second heat exchange element 12 and the first semiconductor cooling chip 13, thereby helping to expel the air at the contact point between the first semiconductor cooling chip 13 and the adjacent structure, further reducing the thermal resistance of the heat-conducting interface, and improving the cooling performance of the cooling device.

[0070] Those skilled in the art will understand that the above-described embodiment, in which the side of the semiconductor cooling chip in contact with the first heat exchanger 11 is used as the cold end and the other side of the cooling chip in contact with the second heat exchanger 12 is used as the hot end, is merely a non-limiting implementation provided by the present invention. It is intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is easy for the public to implement, rather than to limit the scope of protection of the present invention.

[0071] Alternatively, in other embodiments, the voltage polarity of the power supply to the thermoelectric cooler is switched, thereby changing the direction of the current flowing through the semiconductor particles to switch to a cooling or heating mode.

[0072] The working principle of the semiconductor cooling device described above will be described below with reference to some embodiments of its usage. Those skilled in the art will understand that these embodiments are merely non-limiting implementations of the present invention, intended to clearly demonstrate the main concepts of the invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating modes of the semiconductor cooling device. Similarly, the semiconductor cooling device is also only one non-limiting implementation of the present invention and does not limit the execution order or the executing entity of the steps in the processing method.

[0073] In some embodiments, the operation of a semiconductor cooling device includes the following steps: Step 1: Startup Phase. Turn on the power supply to the controller, perform a system self-test, and read the initial temperature values ​​of each temperature sensor. After confirming that the sensor signals are normal, start the first and second water pumps sequentially via the controller to establish water circulation inside the first heat exchanger 11 and the second heat exchanger 12, respectively. After the water circulation stabilizes, proceed to the next phase.

[0074] Step 2: Cooling Operation Stage. The controller provides controllable DC power to the first semiconductor cooling chip 13 based on the difference between the set target temperature and the current temperature of the first metal substrate, causing the temperature of the first metal substrate to gradually decrease and the temperature of the second metal substrate to gradually increase.

[0075] Step 3: Heat exchange stage. The operating parameters of the first and second water pumps are adjusted by the controller, so that the low-temperature coolant inside the first heat exchanger 11 flows to the object being cooled for cooling, and the high-temperature coolant inside the second heat exchanger 12 flows to the cold source for heat dissipation. After completing the cooling or heat dissipation process, the coolant inside each heat exchanger flows back to its respective water-cooling chamber for the next heat exchange cycle.

[0076] Step 4: Temperature Adjustment Stage. The controller reads real-time temperature signals from each temperature sensor at a preset sampling period (e.g., 1 second), calculates the required cooling and heat dissipation power using a PID control algorithm, and dynamically adjusts the operating current on the first semiconductor cooling chip 13. Specifically, when the actual cold junction temperature is higher than the target temperature, the current is increased to enhance cooling power; when the actual cold junction temperature approaches the target temperature, the current is slowly reduced to prevent over-cooling; when the actual cold junction temperature is lower than the target temperature, power supply is stopped or reversed to enter heating mode.

[0077] Thus, by performing closed-loop regulation based on temperature signals via a controller, the present invention can achieve precise control of the temperature of the object being cooled while avoiding overloading of the semiconductor refrigeration device, thereby balancing improved cooling efficiency and extended service life.

[0078] In summary, by replacing the ceramic substrate in contact with semiconductor particles in the semiconductor refrigeration chip inside the semiconductor refrigeration device with a metal substrate, and using indium foil as the thermally conductive interface medium to fill the gap between the semiconductor refrigeration chip and the heat exchange component, this invention can improve the efficiency of heat exchange between the hot and cold ends of the refrigeration chip and the outside environment by leveraging the high thermal conductivity of the metal substrate. Furthermore, by utilizing the high thermal conductivity, good stability, and ductility of indium foil, it can improve the heat exchange efficiency between the refrigeration chip and the heat exchange component while helping to expel air at the interface, further reducing the thermal resistance of the thermal interface. In addition, due to its good stability, indium foil can withstand alternating hot and cold operating conditions and maintain its excellent performance during long-term use, ultimately achieving a simultaneous improvement in the thermal conductivity and service life of the semiconductor refrigeration device.

[0079] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0080] Those skilled in the art will understand that information, signals, and data can be represented using any of a variety of different techniques and skills. For example, the data, instructions, commands, information, signals, bits, symbols, and chips described throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0081] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, the various illustrative components, blocks, modules, circuits, and steps are described above in a generalized manner in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the invention.

[0082] Although the controller and / or processor described in the above embodiments can be implemented through a combination of software and hardware, it is understood that the controller and / or processor can also be implemented solely in software or hardware. For hardware implementation, the controller and / or processor can be implemented in one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), general-purpose processors, general-purpose controllers, microcontrollers, microprocessors, other electronic devices for performing the functions described above, or a selection of combinations of the above devices. For software implementation, the controller and / or processor can be implemented through independent software modules such as procedures and functions running on a general-purpose chip, each module performing one or more functions and operations described herein.

[0083] The various illustrative logic modules and circuits described in conjunction with the embodiments disclosed herein may be implemented or performed using a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. The general-purpose processor may be a microprocessor, but in alternatives, it may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors cooperating with a DSP core, or any other such configuration.

[0084] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0085] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include non-transitory storage devices such as RAM, ROM, EEPROM, CD-ROM, or other optical disc storage, disk storage, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0086] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A semiconductor cooling device, characterized in that, include: The first heat exchanger is connected to the object being cooled via the first pipe; The second heat exchanger is located on one side of the first heat exchanger and is connected to the first cold source; A first semiconductor refrigeration chip is located between the first heat exchanger and the second heat exchanger. The first semiconductor refrigeration chip has a first metal substrate on its side facing the first heat exchanger, and a second metal substrate on its side facing the second heat exchanger. At least one first heat-conducting element is located between the first heat exchanger and the first metal substrate, and / or between the second heat exchanger and the second metal substrate, wherein the first heat-conducting element comprises an indium sheet.

2. The semiconductor cooling device as claimed in claim 1, characterized in that, The first heat-conducting component further includes a liquid metal layer, wherein the liquid metal layer is located between the first heat exchanger and the indium sheet, and / or the liquid metal layer is located between the indium sheet and the first metal substrate, and / or the liquid metal layer is located between the second metal substrate and the indium sheet, and / or the liquid metal layer is located between the indium sheet and the second heat exchanger.

3. The semiconductor cooling device as described in claim 2, characterized in that, The liquid metal layer includes a gallium-based liquid metal layer, wherein the gallium-based liquid metal layer includes a gallium indium tin alloy layer.

4. The semiconductor cooling device as described in claim 2, characterized in that, The surface of the first metal substrate in contact with the indium sheet is provided with a first antioxidant layer, and / or the surface of the second metal substrate in contact with the indium sheet is provided with a second antioxidant layer, wherein the first antioxidant layer and / or the second antioxidant layer are formed by nickel plating.

5. The semiconductor cooling device as claimed in claim 1, characterized in that, The first metal substrate includes a first insulating film layer disposed on the side of the first metal substrate facing the second metal substrate; and The second metal substrate includes a second insulating film layer disposed on the side of the second metal substrate facing the first metal substrate.

6. The semiconductor cooling device as claimed in claim 5, characterized in that, The first metal substrate and / or the second metal substrate are made of copper, aluminum, silver, gold, or an alloy of more than one of these.

7. The semiconductor cooling device as claimed in claim 1, characterized in that, It includes a plurality of the first semiconductor refrigeration chips, wherein each of the first semiconductor refrigeration chips is arranged in an array between the first heat exchanger and the second heat exchanger.

8. The semiconductor cooling device as claimed in claim 1, characterized in that, Also includes: The third heat exchanger is located on the side of the first heat exchanger away from the second heat exchanger and is connected to the second cold source; A second semiconductor refrigeration chip is located between the first heat exchanger and the third heat exchanger. The second semiconductor refrigeration chip has a third metal substrate on its side facing the first heat exchanger, and a fourth metal substrate on its side facing the third heat exchanger. At least one second heat-conducting element is located between the first heat exchanger and the third metal substrate, and / or between the third heat exchanger and the fourth metal substrate, wherein the second heat-conducting element comprises an indium sheet.

9. The semiconductor cooling device as described in claim 1, 7, or 8, characterized in that, Also includes: At least one temperature sensor is used to measure the temperature on each metal substrate; as well as The controller is configured to adjust the power supply parameters on the power supply connected to the thermoelectric cooler and / or adjust the operating parameters of each heat exchanger based on the temperature signal fed back by the temperature sensor.

10. The semiconductor cooling device as claimed in claim 1, characterized in that, The first heat exchanger includes a first water-cooled cavity, and the first pipe includes a first water pipe, connecting the first water-cooled cavity to the object being cooled. The second heat exchanger includes a second water-cooled cavity, the first cold source includes a water-cooled source, and the second water-cooled cavity is connected to the water-cooled source through a second water pipe.

11. The semiconductor cooling device as claimed in claim 1, characterized in that, Also includes: A clamping mechanism is used to provide pressure to the first heat-conducting element to fully fill the gap between the first heat exchanger and the first thermoelectric cooler, and / or the gap between the second heat exchanger and the first thermoelectric cooler.

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