Methods, apparatus, systems, and media of temperature rise testing of electronic devices

Abstract

The application discloses a kind of temperature rise test method, device, system and medium of electronic device, belong to temperature rise test technical field.Warm-up test method includes: obtaining the infrared thermal radiation data and visible light image data of electronic device;According to infrared thermal radiation data and visible light image data, material quality is identified to determine the current material quality of electronic device;Based on current material quality, the current emissivity of electronic device is calibrated;Based on infrared thermal radiation data and calibrated current emissivity, the current temperature of electronic device is determined.In one aspect, infrared thermal radiation data is obtained using non-contact method, and thermocouple does not need to be attached to the surface of the device, which is suitable for temperature rise test of micro devices.On the other hand, material quality is identified according to infrared thermal radiation data and visible light image data, which realizes accurate matching of emissivity parameters and actual material quality of the device, overcomes temperature measurement deviation caused by inaccurate emissivity setting in traditional infrared temperature measurement, and improves the accuracy of temperature rise test.

Description

Technical Field

[0001] This application relates to the field of temperature rise testing technology, and in particular to a temperature rise testing method, temperature rise testing device, temperature rise testing system, and computer-readable storage medium for electronic devices. Background Technology

[0002] As smart home appliances evolve towards miniaturization, high power density, and intelligence, they integrate a large number of tiny electronic components, such as power management chips, rectifier bridges, power transistors, and miniature sensors. The temperature rise of these electronic components during operation directly affects the reliability, energy efficiency, and lifespan of smart home appliances. Therefore, accurate temperature rise testing of these electronic components has become a crucial step in product development and quality inspection.

[0003] Currently, commonly used temperature rise testing methods mainly include thermocouple contact method and infrared thermography method. Among them, thermocouple contact method requires attaching thermocouples to the surface of the device. However, for small electronic devices, thermocouples are difficult to attach or are prone to detachment during the test. In addition, the contact between the thermocouple and the device surface will change the original thermal field distribution and introduce measurement errors.

[0004] While infrared thermal imaging enables non-contact measurement, its temperature measurement accuracy is highly dependent on the accurate setting of the surface emissivity of the device under test. However, electronic devices are packaged in a variety of materials, such as silicon, epoxy resin, and metals, which have significantly different surface emissivity, and this emissivity varies with temperature. In actual testing, using a fixed empirical emissivity value for temperature calculation will result in significant temperature measurement deviations due to the mismatch between the emissivity and the actual material of the device, leading to inaccurate temperature rise test results. Summary of the Invention

[0005] This application provides a method, apparatus, system, and computer-readable storage medium for testing the temperature rise of electronic devices, in order to solve at least one of the aforementioned technical problems.

[0006] The temperature rise testing method for electronic devices according to embodiments of this application includes: Acquire infrared thermal radiation data of electronic devices, and acquire visible light image data of electronic devices; Material identification is performed based on infrared thermal radiation data and visible light image data to determine the current material of electronic devices; The current emissivity of the electronic device is calibrated based on the current material. The current temperature of the electronic device is determined based on infrared thermal radiation data and the calibrated current emissivity.

[0007] In some implementations, the current emissivity of the electronic device is calibrated based on the current material, including: Based on the current material, retrieve the emissivity parameter of the current material at the current temperature from the preset material library and use it as the current emissivity; The preset material library stores emissivity parameters for various materials at different temperatures.

[0008] In some implementations, after determining the current temperature of the electronic device, the temperature rise test method further includes: The step returns to retrieve the emissivity parameter of the current material at the current temperature from the preset material library as the current emissivity, so as to correct the current emissivity according to the current temperature.

[0009] In some implementations, the temperature rise test method further includes: The theoretical temperature field corresponding to the electronic device is calculated through multiphysics thermal simulation; Based on infrared thermal radiation data and the calibrated current emissivity, the current temperature of the electronic device is determined, including: The infrared thermal radiation data is fused with the theoretical temperature field to correct the infrared thermal radiation data. The current temperature is determined based on the corrected infrared thermal radiation data and the calibrated current emissivity.

[0010] In some implementations, the temperature rise test method further includes: Determine the target heat-generating area of ​​electronic devices based on infrared thermal radiation data; Acquire visible light image data of electronic devices, including: Acquire visible light image data corresponding to the target heating area.

[0011] In some implementations, the temperature rise testing method further includes: Obtain the standard material of electronic devices as input by the user; When the current material is inconsistent with the standard material, the current material is corrected based on the standard material.

[0012] In some implementations, the temperature rise test method further includes: Get multiple current temperatures within a predetermined time period; The temperature rise test results of electronic devices are determined based on multiple current temperatures. The temperature rise test results include any one or more of the following: initial temperature, steady-state temperature, temperature rise curve, and temperature extreme value.

[0013] The temperature rise testing device for electronic devices according to embodiments of this application includes: The acquisition module is used to acquire infrared thermal radiation data of electronic devices and visible light image data of electronic devices. The identification module is used to identify materials based on infrared thermal radiation data and visible light image data in order to determine the current material of electronic devices; The calibration module is used to calibrate the current emissivity of electronic devices based on the current material. The determination module is used to determine the current temperature of electronic devices based on infrared thermal radiation data and the calibrated current emissivity.

[0014] The temperature rise testing system of this application includes one or more processors and a memory. The memory stores a computer program. When the computer program is executed by the processor, it implements the temperature rise testing method of any of the above embodiments.

[0015] The computer-readable storage medium of the present application embodiment stores a computer program thereon, which, when executed by a processor, implements the temperature rise test method of any of the above embodiments.

[0016] The temperature rise testing method, device, system, and computer-readable storage medium for electronic devices according to embodiments of this application identify the current material of the electronic device based on infrared thermal radiation data and visible light image data. Then, the current emissivity of the electronic device is calibrated based on the current material. Finally, the current temperature of the electronic device is determined based on the infrared thermal radiation data and the calibrated current emissivity. On the one hand, the non-contact acquisition of infrared thermal radiation data eliminates the need to attach thermocouples to the device surface, avoiding interference from contact measurements on the device's thermal field distribution, making it suitable for temperature rise testing of micro-devices. On the other hand, material identification based on infrared thermal radiation data and visible light image data achieves accurate matching of the emissivity parameter with the actual material of the device, overcoming the temperature measurement deviation problem caused by inaccurate emissivity settings in traditional infrared temperature measurement, and improving the accuracy of temperature rise testing.

[0017] Additional aspects and advantages of embodiments of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of embodiments of this application. Attached Figure Description

[0018] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, wherein: Figure 1 This is a schematic flowchart of a temperature rise testing method for electronic devices according to certain embodiments of this application; Figure 2 These are side and front views of the application scenarios of the temperature rise testing method for electronic devices according to certain embodiments of this application. Figure 3 This is a schematic flowchart of a temperature rise testing method for electronic devices according to certain embodiments of this application; Figure 4 This is a schematic diagram of a temperature rise testing device for electronic devices according to certain embodiments of this application; Figure 5 This is a schematic diagram of the temperature rise testing system according to certain embodiments of this application; Figure 6 This is a schematic diagram illustrating the connection state between a computer-readable storage medium and a processor according to certain embodiments of this application.

[0019] Explanation of reference numerals in the attached figures: Temperature rise testing device 100, acquisition module 110, identification module 120, calibration module 130, determination module 140, temperature rise testing system 200, processor 210, memory 220, computer-readable storage medium 300, computer program 310, processor 320. Detailed Implementation

[0020] The embodiments of this application will be further described below with reference to the accompanying drawings. The same or similar reference numerals in the drawings denote the same or similar elements or elements having the same or similar functions throughout. Furthermore, the embodiments of this application described below with reference to the accompanying drawings are exemplary and are only used to explain the embodiments of this application, and should not be construed as limiting this application.

[0021] Please see Figures 1 to 3 The temperature rise testing method for electronic devices according to embodiments of this application includes: S101. Acquire infrared thermal radiation data of electronic devices and acquire visible light image data of electronic devices.

[0022] In the embodiments of this application, the electronic devices can be miniature devices integrated within smart home appliances, including but not limited to power management chips, rectifier bridges, silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs), and miniature temperature sensors. Because these electronic devices are small in size, it is difficult to perform contact-based temperature rise testing by attaching thermocouples. Therefore, the embodiments of this application employ a non-contact method to obtain their thermal radiation information.

[0023] In some embodiments, infrared thermal radiation data can be acquired using an infrared thermal imager. The infrared thermal imager can be positioned above the electronic device to receive infrared thermal radiation signals radiated outward from the surface of the electronic device in a non-contact manner, and convert these signals into infrared thermal radiation data for output. The infrared thermal radiation data contains information on the thermal radiation intensity of different regions on the surface of the electronic device, reflecting the temperature distribution on the surface of the electronic device.

[0024] In some embodiments, visible light image data can be acquired simultaneously with infrared thermal radiation data, or acquired simultaneously after infrared thermal radiation data. Visible light image data records the texture, color, and structural morphology features of the electronic device surface, which is used for subsequent identification of the packaging material of the electronic device.

[0025] In some embodiments, visible light image data can be acquired by a visible light camera module integrated into an infrared thermal imager to ensure the spatial consistency between visible light image data and infrared thermal radiation data, facilitating subsequent pixel-level alignment processing.

[0026] In some embodiments, before acquiring infrared thermal radiation data, the electronic device can be fixed to the test fixture, and the vertical height and horizontal angle between the infrared thermal imager and the electronic device can be adjusted so that the test area of ​​the infrared thermal imager is completely aligned with the heat-generating core area of ​​the electronic device. By aligning the test area with the heat-generating core area rather than the device edge or non-heat-generating area, the basic temperature measurement deviation can be reduced.

[0027] In some embodiments, the electronic device is secured by either fixing the electronic device individually to the center of the test fixture, or fixing the entire power board containing the electronic device to the test fixture. The test fixture provides power supply and electrical load interfaces for applying rated operating voltage and current to the electronic device during testing.

[0028] In some embodiments, electronic devices can be tested in a constant temperature environment chamber. The constant temperature environment chamber provides a stable test temperature field, simulating the actual working environment of the electronic devices in smart home appliances. Before collecting infrared thermal radiation data, the constant temperature environment chamber is turned on and a stable ambient temperature is set. After the ambient temperature stabilizes, the electronic devices are powered on and loaded to their rated operating conditions before the formal collection of infrared thermal radiation data and visible light image data begins.

[0029] In some embodiments, before formal data acquisition, the host computer also performs parameter calibration of the infrared thermal imager, including calibrating and setting parameters such as the temperature measurement range, resolution, and focal length of the infrared thermal imager to ensure the accuracy of the infrared thermal radiation data output by the infrared thermal imager.

[0030] S102. Material identification is performed based on infrared thermal radiation data and visible light image data to determine the current material of the electronic device.

[0031] In the embodiments of this application, the packaging material of the electronic device may include various different materials, such as silicon, epoxy resin, and metal, and the surface emissivity of different materials varies. In order to accurately calibrate the emissivity later, it is first necessary to determine the actual material type of each area on the surface of the electronic device.

[0032] In some embodiments, the material identification process can be performed by a host computer. The host computer fuses visible light image data with infrared thermal radiation data. Based on the surface texture features, color features, and structural morphology features contained in the visible light image data, and combined with the thermal radiation intensity distribution features contained in the infrared thermal radiation data, the computer comprehensively judges the material type of each region on the surface of the electronic device, thereby determining the current material of the electronic device.

[0033] In some embodiments, the host computer may pre-store feature templates for various packaging materials, including visible light image features and infrared radiation features of silicon-based materials, epoxy resin packaging materials, copper lead materials, aluminum heat sink materials, etc. The host computer matches the acquired visible light image data and infrared thermal radiation data with the aforementioned feature templates to determine the current material corresponding to each area on the surface of the electronic device.

[0034] S103. Calibrate the current emissivity of the electronic device based on the current material.

[0035] In the embodiments of this application, emissivity is a key parameter affecting the accuracy of infrared temperature measurement. Different materials have different surface emissivity, and the emissivity of the same material changes with temperature. If a fixed empirical emissivity value is used for infrared temperature measurement calculation, temperature measurement deviations will occur because the emissivity does not match the actual material of the device. Therefore, after determining the current material of the electronic device, the emissivity needs to be calibrated based on the current material to obtain a current emissivity that matches the actual surface condition of the electronic device.

[0036] S104. Determine the current temperature of the electronic device based on infrared thermal radiation data and the calibrated current emissivity.

[0037] In the embodiments of this application, the infrared thermal radiation data collected by the infrared thermal imager reflects the thermal radiation intensity of the electronic device surface. This thermal radiation intensity needs to be converted into an actual temperature value by combining it with emissivity parameters. The host computer can use the infrared thermal radiation data and the calibrated current emissivity as a calculation parameter to convert the infrared thermal radiation intensity into the current temperature of the electronic device surface through an infrared temperature measurement algorithm.

[0038] In some embodiments, the host computer can perform temperature inversion calculations on infrared thermal radiation data based on Planck's radiation law and combined with the calibrated current emissivity to obtain the current temperature of each pixel on the surface of the electronic device, thereby obtaining the temperature distribution on the surface of the electronic device.

[0039] In some embodiments, after determining the current temperature, the host computer can record the temperature data of the electronic device and generate temperature rise curves, temperature extreme values, and other temperature rise test results, while saving the original infrared thermal radiation data for subsequent comparative analysis.

[0040] In the temperature rise testing method for electronic devices according to the embodiments of this application, material identification is performed based on infrared thermal radiation data and visible light image data to determine the current material of the electronic device. Then, the current emissivity of the electronic device is calibrated based on the current material. Finally, the current temperature of the electronic device is determined based on the infrared thermal radiation data and the calibrated current emissivity. On the one hand, the method uses a non-contact approach to acquire infrared thermal radiation data, eliminating the need to attach thermocouples to the device surface and avoiding interference from contact measurements on the device's thermal field distribution, making it suitable for temperature rise testing of micro-devices. On the other hand, material identification based on infrared thermal radiation data and visible light image data achieves accurate matching of the emissivity parameter with the actual material of the device, overcoming the temperature measurement deviation problem caused by inaccurate emissivity settings in traditional infrared temperature measurement, and improving the accuracy of temperature rise testing.

[0041] In some implementations, the current emissivity of the electronic device is calibrated based on the current material, including: S201. Based on the current material, retrieve the emissivity parameter of the current material at the current temperature from the preset material library and use it as the current emissivity.

[0042] In the embodiments of this application, a preset material library stores emissivity parameters of various materials at different temperatures. The preset material library can be pre-built and loaded into a host computer, and includes emissivity data of commonly used packaging materials for electronic devices, such as emissivity parameters of silicon-based materials, epoxy resin, copper, aluminum, silicon carbide, etc., at different temperatures.

[0043] In some embodiments, the preset material library can be stored in the form of a lookup table, with each material corresponding to a set of emissivity-temperature relationship data. This relationship data can be obtained by conducting emissivity calibration experiments on various materials under different temperature conditions in advance, and stored in the preset material library in the form of discrete data points or fitting functions.

[0044] In some embodiments, after determining the current material of the electronic device, the host computer can use the current material and current temperature as index conditions to search for an emissivity parameter in a preset material library that matches both the current material and current temperature, and use the found emissivity parameter as the current emissivity. If the current temperature is between two adjacent calibration temperature points in the preset material library, the host computer can obtain the corresponding emissivity parameter at the current temperature through interpolation calculation, and use it as the current emissivity. The current temperature initially used to determine the current emissivity can be the ambient temperature corresponding to the aforementioned constant temperature chamber, or it can be a preset temperature that is updated through an iterative correction process described later.

[0045] The embodiments of this application establish a preset material library containing emissivity parameters of various materials at different temperatures, and retrieve the corresponding emissivity parameters from the preset material library based on the identified current material and current temperature as the current emissivity. This achieves dynamic matching of emissivity parameters with material type and temperature conditions, avoids temperature measurement deviation caused by using fixed empirical values, and improves the accuracy of infrared temperature measurement under different materials and different temperature conditions.

[0046] In some implementations, after determining the current temperature of the electronic device, the temperature rise test method further includes: S301, Return to the step of retrieving the emissivity parameter of the current material at the current temperature from the preset material library as the current emissivity, so as to correct the current emissivity according to the current temperature.

[0047] In the embodiments of this application, the surface temperature of the electronic device continuously changes during operation, and the emissivity of the same material changes with temperature. If the emissivity is calibrated only once at the initial moment, as the temperature of the electronic device increases or decreases, a deviation will occur between the initially calibrated emissivity and the true emissivity at the current actual temperature of the device, causing the accuracy of subsequent temperature measurement results to gradually decrease. Therefore, after determining the current temperature of the electronic device, this current temperature can be used as a new temperature index condition to retrieve the emissivity parameter corresponding to the current material at that current temperature from a preset material library to correct the current emissivity.

[0048] In some embodiments, after determining the current temperature of an electronic device, the host computer can automatically feed that current temperature back to the emissivity calibration stage. Using the current material and the updated current temperature as index conditions, the host computer re-searches for the corresponding emissivity parameter from a preset material library and replaces the previous current emissivity with the found emissivity parameter. Subsequently, the host computer recalculates the current temperature of the electronic device based on the updated current emissivity and infrared thermal radiation data, thereby achieving iterative correction between emissivity and temperature.

[0049] In some embodiments, the above iterative correction process can continue until the difference between two consecutive calculated current temperatures is less than a preset convergence threshold, at which point the iteration stops, and the last calculated current temperature is taken as the final temperature measurement result of the electronic device. The preset convergence threshold can be set according to the test accuracy requirements, for example, 0.1℃~0.5℃. Through iterative convergence, the current emissivity is matched with the current temperature, gradually approaching the true temperature of the electronic device surface.

[0050] In some embodiments, the above-described return step can be continuously executed throughout the entire testing cycle of the electronic device. That is, during the process from power-on loading to test completion, the host computer continuously collects infrared thermal radiation data and executes the above-described return step at each sampling moment. Based on the latest determined current temperature, the corresponding emissivity parameter is retrieved from the preset material library to correct the current emissivity. In this way, the current emissivity can be dynamically updated with the real-time changes in the electronic device temperature, ensuring that the emissivity parameter always matches the actual temperature state of the device throughout the entire temperature rise process.

[0051] The embodiment of this application returns to the emissivity calibration step after determining the current temperature, and retrieves the corresponding emissivity parameters from the preset material library based on the updated current temperature to correct the current emissivity. This achieves dynamic tracking and correction of emissivity changes with temperature, avoids the problem of emissivity not matching the actual state due to temperature changes, and ensures the continuous accuracy of temperature measurement results of electronic devices throughout the entire temperature rise process.

[0052] In some implementations, the temperature rise test method further includes: S401. Calculate the theoretical temperature field corresponding to the electronic device through multiphysics thermal simulation.

[0053] In the embodiments of this application, multiphysics thermal simulation can be performed by a multiphysics thermal simulation module integrated in a host computer. The multiphysics thermal simulation module can establish a thermal simulation model of the electronic device based on its structural and operating parameters, and obtain the theoretical temperature field of the electronic device under the current operating conditions through numerical calculation. The theoretical temperature field reflects the theoretical temperature distribution of each region of the electronic device under ideal conditions, serving as a true reference benchmark for subsequent correction of infrared measured data.

[0054] In some embodiments, structural parameters may include physical properties such as the geometric dimensions, packaging structure, chip layout, thermal conductivity, specific heat capacity, and density of each layer of material of the electronic device. Operating parameters may include the supply voltage, operating current, power loss, ambient temperature, and heat dissipation boundary conditions of the electronic device. The host computer can automatically load the corresponding structural parameters according to the device model input by the user, and determine the operating parameters according to the voltage and current conditions set by the user.

[0055] In some embodiments, the multiphysics thermal simulation calculation can be performed before the electronic device is powered on or simultaneously with the infrared thermal radiation data acquisition. When the simulation calculation is completed before power-on, the theoretical temperature field can be stored as a pre-calculated result in the host computer for subsequent fusion processing. When the simulation is performed simultaneously with the infrared thermal radiation data acquisition, the host computer can update the operating parameters in real time and dynamically calculate the theoretical temperature field to adapt to changes in the operating conditions of the electronic device.

[0056] Based on infrared thermal radiation data and the calibrated current emissivity, the current temperature of the electronic device is determined, including: S402. The infrared thermal radiation data is fused with the theoretical temperature field to correct the infrared thermal radiation data.

[0057] In the embodiments of this application, the infrared thermal radiation data collected by the infrared thermal imager may be subject to thermal radiation interference in the edge region of the electronic device. Specifically, the edge region of a micro-electronic device is close to adjacent structures, and the thermal radiation from the adjacent structures may crosstalk into the infrared thermal radiation signal of the edge region, causing the infrared thermal radiation data readings in the edge region to be distorted and unable to accurately reflect the actual temperature at the boundary of the electronic device. In addition, environmental reflection errors and the viewing angle deviation of the infrared thermal imager will also affect the accuracy of the infrared thermal radiation data.

[0058] In some embodiments, the fusion process can be performed by a pixel-level fusion module in a host computer. The pixel-level fusion module can precisely align the measured infrared image corresponding to the infrared thermal radiation data with the theoretical temperature field obtained from multiphysics thermal simulation calculations, pixel by pixel. During the alignment process, the pixel-level fusion module establishes a one-to-one mapping relationship between each pixel in the measured infrared image and the temperature value at the corresponding spatial location in the theoretical temperature field, based on the geometric structural features of the electronic device.

[0059] In some embodiments, after completing pixel-by-pixel alignment, the pixel-level fusion module compares the measured temperature value corresponding to each pixel in the measured infrared image with the theoretical temperature value of the corresponding pixel in the theoretical temperature field. For pixels in the measured infrared image whose deviation exceeds a preset threshold, the pixel-level fusion module determines that the pixel is affected by edge thermal radiation interference, environmental reflection error, or viewing angle deviation, and can correct the infrared thermal radiation data of the pixel based on the theoretical temperature value of the corresponding pixel in the theoretical temperature field.

[0060] In some embodiments, the pixel-level fusion module can perform targeted correction on pixels in the edge regions of electronic devices. The determination of edge regions can be based on the geometric contour information of the electronic devices. The pixel-level fusion module identifies pixels located within a certain range of the device boundary as edge region pixels, and preferentially corrects the infrared thermal radiation data of these pixels using a theoretical temperature field to eliminate temperature reading distortion caused by thermal radiation crosstalk between adjacent structures.

[0061] S403. Determine the current temperature based on the corrected infrared thermal radiation data and the calibrated current emissivity.

[0062] In the embodiments of this application, after completing the fusion process, the host computer obtains the corrected infrared thermal radiation data. The corrected infrared thermal radiation data has eliminated the influence of factors such as edge thermal radiation interference, environmental reflection errors, and viewing angle deviations, and can more accurately reflect the true thermal radiation intensity of each area on the surface of the electronic device. Based on the corrected infrared thermal radiation data and using the calibrated current emissivity as a calculation parameter, the host computer can convert the corrected thermal radiation intensity into the current temperature corresponding to each pixel on the surface of the electronic device through an infrared temperature measurement algorithm.

[0063] The implementation method of this application calculates the theoretical temperature field of electronic devices through multiphysics thermal simulation, and performs pixel-level fusion processing with infrared thermal radiation data and theoretical temperature field to correct the infrared thermal radiation data. This eliminates the temperature reading distortion caused by thermal radiation crosstalk between adjacent structures, environmental reflection and viewing angle deviation in the edge area of ​​electronic devices. Combined with the calibrated current emissivity, the current temperature is determined, and accurate measurement of chip-level temperature rise of electronic devices is achieved.

[0064] In some implementations, the temperature rise test method further includes: S501. Determine the target heat-generating area of ​​electronic devices based on infrared thermal radiation data.

[0065] In the embodiments of this application, electronic devices may not generate significant heat in all areas during operation; the heat generation is mainly concentrated in specific areas such as the active area and power dissipation area of ​​the chip. The target heat generation area is the region on the surface of the electronic device with high thermal radiation intensity and significant temperature rise, which is the key area to focus on in temperature rise testing. By determining the target heat generation area based on infrared thermal radiation data, subsequent material identification and temperature calculation can be focused on the key heat generation area, improving testing efficiency and targeting.

[0066] In some embodiments, the host computer can analyze the infrared thermal radiation data collected by the infrared thermal imager, extract the thermal radiation intensity value corresponding to each pixel in the infrared thermal radiation data, and determine the continuous area formed by pixels whose thermal radiation intensity values ​​exceed a preset intensity threshold as the target heating area. The preset intensity threshold can be set according to the type of electronic device and operating conditions; for example, the area where the thermal radiation intensity ranks in the top certain percentage of pixels is determined as the target heating area.

[0067] In some embodiments, the host computer can generate an initial infrared thermal image based on infrared thermal radiation data, perform temperature gradient analysis on the initial infrared thermal image, identify the boundaries of regions with significant temperature gradient changes, and determine the high-temperature region enclosed by the boundary as the target heating region. Temperature gradient analysis can effectively distinguish between the heating core area and non-heating area on the surface of electronic devices, making the determination of the boundary of the target heating region more accurate.

[0068] In some embodiments, the host computer can retrieve the chip layout information of the electronic device based on the model number input by the user, and combine it with the thermal radiation intensity distribution in the infrared thermal radiation data. The location of the active area marked in the chip layout information is then matched with the high thermal radiation intensity region in the infrared thermal radiation data to determine the target heat-generating area. By combining the device layout information with measured thermal radiation data, the actual core heat-generating area of ​​the electronic device can be located more accurately.

[0069] Acquire visible light image data of electronic devices, including: S502. Obtain visible light image data corresponding to the target heating area.

[0070] In the embodiments of this application, after determining the target heating area, the acquisition range of visible light image data can be focused on the target heating area, that is, only the visible light image data corresponding to the target heating area is acquired, rather than the visible light image data of the entire surface of the electronic device. By limiting the acquisition range of visible light image data to the target heating area, the interference of redundant image data from non-heating areas on the subsequent material identification process can be reduced, thereby improving the efficiency and accuracy of material identification.

[0071] In some embodiments, after determining the target heating area, the host computer can control the visible light camera module to perform directional acquisition at the same spatial coordinate position based on the spatial coordinate position of the target heating area in the infrared thermal radiation data, thereby obtaining visible light image data corresponding to the target heating area. Since the visible light camera module and the infrared thermal imager are in the same spatial position, the coordinate information of the target heating area in the infrared thermal radiation data can accurately guide the acquisition range of the visible light image data.

[0072] In some embodiments, the visible light image data corresponding to the target heat-generating area is used for subsequent identification of the packaging material within the target heat-generating area. Since the target heat-generating area is a key focus area for temperature rise testing, accurate material identification and emissivity calibration of this area can ensure the temperature measurement accuracy of critical heat-generating areas.

[0073] The embodiments of this application determine the target heating area of ​​electronic devices based on infrared thermal radiation data and focus the acquisition range of visible light image data on the target heating area, so that subsequent material identification and emissivity calibration are concentrated on the key heating area. This reduces the interference of redundant data in non-heating areas, improves the efficiency and targeting of material identification, and ensures the accuracy of temperature rise test results in the key heating area.

[0074] In some implementations, the temperature rise testing method further includes: S601. Obtain the standard material of the electronic device as input by the user.

[0075] In the embodiments of this application, the standard material refers to the actual material type of the packaging material of the electronic device, which can be determined and input by the user based on the product specification sheet, bill of materials, or actual packaging process information of the electronic device. The user can input the standard material of the electronic device through the human-machine interface of the host computer, and the host computer receives and stores the standard material information.

[0076] In some embodiments, the host computer's human-machine interface provides a material selection list, which includes commonly used packaging material types for electronic devices, such as silicon, epoxy resin, copper, aluminum, silicon carbide, and gallium nitride. Users can select the corresponding standard material from the material selection list based on the actual packaging material of the electronic device under test. In some embodiments, users can also manually enter the name or number of the standard material.

[0077] In some embodiments, when the surface of an electronic device contains multiple different encapsulation materials, the standard material input by the user may include the material type corresponding to each region of the electronic device. For example, for an electronic device that includes a silicon chip exposed area and an epoxy resin encapsulation area, the user may input silicon and epoxy resin as the standard materials for the corresponding areas.

[0078] S602. When the current material is inconsistent with the standard material, the current material is corrected based on the standard material.

[0079] In the embodiments of this application, the current material is the result of material identification through infrared thermal radiation data and visible light image data, while the standard material is the actual material type input by the user based on the actual information of the device. Since the material identification process may be affected by factors such as visible light image quality, device surface contamination, and lighting conditions, there is a possibility that the identification result may be inconsistent with the actual material of the device. Therefore, before calibrating the emissivity based on the current material, the current material can be compared and verified with the standard material to ensure the accuracy of the material information used for emissivity calibration.

[0080] In some embodiments, after the host computer completes material identification and obtains the current material, it can automatically compare the current material with the standard material input by the user. If the current material matches the standard material, the material identification result is confirmed to be correct, and subsequent emissivity calibration is performed directly based on the current material. If the current material does not match the standard material, it is determined that there is a deviation in the material identification result, and the host computer can correct the current material to the standard material, that is, replace the current material obtained from material identification with the standard material input by the user as the basis for subsequent emissivity calibration.

[0081] In some embodiments, when the current material differs from the standard material, the host computer can generate a material identification deviation prompt message and display it to the user through a human-computer interaction interface when correcting the current material. The prompt message may include the current material type obtained from material identification and the standard material type input by the user, allowing the user to confirm whether to correct using the standard material. After user confirmation, the host computer performs the correction operation.

[0082] In some embodiments, when the current material differs from the standard material, the host computer can also record the deviation information of this material identification, including the identified current material type, the standard material type, and the corresponding visible light image data features, etc., for subsequent optimization of the material identification algorithm's recognition accuracy. By accumulating material identification deviation data, feature templates or recognition models can be improved in a targeted manner, reducing the probability of material identification errors in subsequent tests.

[0083] In some embodiments, when the surface of an electronic device comprises multiple regions with different materials, the host computer can perform a comparison operation between the current material and the standard material for each region. If the current material of a certain region is inconsistent with the corresponding standard material, the host computer only corrects the current material of that region; the current materials of other regions remain unchanged if they are consistent with the corresponding standard material. This enables region-by-region verification and correction of the material information of each region of the electronic device, ensuring that the material information used for emissivity calibration in each region is accurate and reliable.

[0084] The embodiments of this application obtain the standard material input by the user, and correct the current material based on the standard material when the current material is inconsistent with the standard material. This provides a means of verification and error correction based on the user's prior knowledge for the material identification results, avoiding the problem of emissivity calibration errors caused by material identification deviation, which in turn affects the temperature measurement accuracy. This improves the reliability and fault tolerance of the temperature rise test method in practical applications.

[0085] In some implementations, the temperature rise test method further includes: S701, Obtain multiple current temperatures within a predetermined time period.

[0086] In the embodiments of this application, the electronic device undergoes a continuous temperature rise process from power-on loading to test completion, during which the surface temperature of the electronic device may change continuously over time. The predetermined time period can be the time interval from power-on loading to test completion. The host computer continuously performs the temperature rise test according to a preset sampling cycle within the predetermined time period, acquiring infrared thermal radiation data of the electronic device at each sampling moment and determining the corresponding current temperature, thereby obtaining multiple current temperatures within the predetermined time period.

[0087] In some embodiments, the preset sampling period can be set according to the thermal response characteristics and test accuracy requirements of the electronic device. For small electronic devices with fast thermal response, the preset sampling period can be set to a shorter time interval; for electronic devices with slow thermal response, the preset sampling period can be set to a longer time interval. The host computer can automatically match the corresponding preset sampling period according to the device model input by the user, or the user can manually set it according to actual test requirements.

[0088] In some embodiments, the host computer can store multiple current temperatures acquired within a predetermined time period as temperature time series data in chronological order, with each current temperature corresponding to a timestamp, for use in generating subsequent temperature rise test results.

[0089] S702. Determine the temperature rise test results of electronic devices based on multiple current temperatures. The temperature rise test results include any one or more of the following: initial temperature, stable temperature, temperature rise curve, and temperature extreme value.

[0090] In the embodiments of this application, the host computer can perform data processing and statistical analysis based on multiple current temperatures acquired within a predetermined time period to determine the temperature rise test results of the electronic device. The temperature rise test results are used to evaluate the thermal performance of the electronic device under rated operating conditions, providing data basis for product development and quality inspection.

[0091] In some embodiments, the initial temperature is the current temperature corresponding to the start time of a predetermined time period, i.e., the surface temperature of the electronic device at the moment of power-on loading. The initial temperature is typically close to the ambient temperature set in the constant temperature chamber, reflecting the reference temperature of the electronic device in its non-operating state. The host computer can determine the current temperature obtained at the first sampling moment within the predetermined time period as the initial temperature.

[0092] In some embodiments, the stable temperature is the surface temperature of the electronic device after it reaches a thermally stable state. The host computer can, after determining that the electronic device has reached a thermally stable state, take the average of the current temperatures obtained at multiple sampling moments during the thermally stable state phase as the stable temperature. The stable temperature reflects the final temperature level of the electronic device during long-term operation under rated operating conditions and is a key indicator for evaluating the device's heat dissipation performance and thermal reliability.

[0093] In some embodiments, the temperature rise curve is a curve plotted with time on the horizontal axis and the current temperature on the vertical axis, showing the change of temperature over time. The host computer can generate the temperature rise curve based on multiple current temperatures and their corresponding timestamps within a predetermined time period and display it visually through a human-computer interaction interface. The temperature rise curve intuitively reflects the complete temperature rise process of the electronic device from being powered on to reaching thermal steady state or completing the test, including information such as the temperature rise rate, the temperature rise inflection point, and the time required to reach steady state.

[0094] In some embodiments, temperature extremes include the maximum and minimum temperature values ​​among multiple current temperatures within a predetermined time period. The maximum temperature value reflects the peak temperature reached by the electronic device during testing and is used to assess whether the device has a risk of localized overheating; the minimum temperature value corresponds to the initial temperature or the lowest point of temperature fluctuation during testing. The host computer can automatically extract the maximum and minimum temperature values ​​from multiple current temperatures and annotate their corresponding timestamps and spatial location information.

[0095] In some embodiments, after determining the temperature rise test results, the host computer can output the temperature rise test results in the form of a test report. The test report includes the initial temperature, stable temperature, temperature extreme values, temperature rise curve, etc. At the same time, it saves the original infrared thermal radiation data, the corrected infrared thermal radiation data, and the multiphysics simulation data within a predetermined time period for subsequent comparative analysis and data traceability.

[0096] In some embodiments, the host computer can also compare the temperature rise test results with preset temperature rise limits to determine whether the temperature rise of the electronic device is acceptable. For example, if the stable temperature exceeds the preset temperature rise limit, the host computer can generate an over-temperature alarm and notify the user through a human-machine interface, so that the user can promptly detect abnormal thermal performance of the electronic device. The preset temperature rise limit is set according to the product specifications or industry standards of the electronic device.

[0097] The embodiments of this application acquire multiple current temperatures within a predetermined time period and determine temperature rise test results, including initial temperature, stable temperature, temperature rise curve, and temperature extreme values, based on these multiple current temperatures. This enables comprehensive recording and quantitative evaluation of the complete temperature rise process of electronic devices, providing complete data support for the thermal performance analysis and quality judgment of electronic devices.

[0098] In summary, the temperature rise testing method for electronic devices according to the embodiments of this application has at least the following effects: (1) The infrared thermal radiation data of electronic devices are obtained in a non-contact manner for temperature rise testing. There is no need to attach thermocouples to the device surface, which does not damage the device structure or change the original thermal field distribution of the device. It is suitable for temperature rise testing of micro devices and ultra-thin devices.

[0099] (2) By acquiring infrared thermal radiation data and combining it with visible light image data, material identification is performed. Based on the identified current material, the corresponding emissivity parameter is retrieved from the preset material library for dynamic calibration. This achieves real-time matching between the emissivity parameter and the actual packaging material of the device, and automatically corrects the current emissivity as the current temperature changes. This solves the problem of temperature measurement deviation caused by the uncertainty of emissivity under different materials and different working conditions.

[0100] (3) The infrared thermal radiation data and the theoretical temperature field obtained by multi-physics thermal simulation are fused and corrected at the pixel level, eliminating the temperature reading distortion caused by thermal radiation crosstalk between adjacent structures, environmental reflection and viewing angle deviation in the edge area of ​​electronic devices, and realizing precise temperature rise measurement at the chip level.

[0101] (4) It supports temperature rise testing of commonly used micro electronic devices in smart home appliances such as silicon carbide metal oxide semiconductor field effect transistors, rectifier bridges, and miniature temperature sensors. It is highly versatile and adaptable to the actual application scenarios of smart home appliance product development and quality testing.

[0102] (5) After the user inputs the device model, operating parameters and other information of the electronic device, the host computer can automatically complete the entire process of material identification, emissivity calibration, fusion correction and temperature calculation. The operation is simple, the test accuracy is high and the repeatability is good.

[0103] Please see Figure 4 The temperature rise testing device 100 for electronic devices according to embodiments of this application includes: The acquisition module 110 is used to acquire infrared thermal radiation data of electronic devices and visible light image data of electronic devices. The identification module 120 is used to identify materials based on infrared thermal radiation data and visible light image data in order to determine the current material of the electronic device; Calibration module 130 is used to calibrate the current emissivity of electronic devices based on the current material; The determination module 140 is used to determine the current temperature of the electronic device based on infrared thermal radiation data and the calibrated current emissivity.

[0104] In some implementations, the calibration module 130 is specifically used for: Based on the current material, retrieve the emissivity parameter of the current material at the current temperature from the preset material library and use it as the current emissivity; The preset material library stores emissivity parameters for various materials at different temperatures.

[0105] In some implementations, after the determining module 140 determines the current temperature of the electronic device, the calibration module 130 is further configured to: Retrieve the emissivity parameter of the current material at the current temperature from the preset material library and use it as the current emissivity to adjust the current emissivity according to the current temperature.

[0106] In some implementations, the determining module 140 is further configured to: The theoretical temperature field corresponding to the electronic device is calculated through multiphysics thermal simulation; The infrared thermal radiation data is fused with the theoretical temperature field to correct the infrared thermal radiation data. The current temperature is determined based on the corrected infrared thermal radiation data and the calibrated current emissivity.

[0107] In some implementations, the acquisition module 110 is further configured to: Determine the target heat-generating area of ​​electronic devices based on infrared thermal radiation data; Acquire visible light image data corresponding to the target heating area.

[0108] In some implementations, before the calibration module 130 calibrates the current emissivity of the electronic device based on the current material, the identification module 120 is further configured to: Obtain the standard material of electronic devices as input by the user; When the current material is inconsistent with the standard material, the current material is corrected based on the standard material.

[0109] In some implementations, the determining module 140 is further configured to: Get multiple current temperatures within a predetermined time period; The temperature rise test results of electronic devices are determined based on multiple current temperatures. The temperature rise test results include any one or more of the following: initial temperature, steady-state temperature, temperature rise curve, and temperature extreme value.

[0110] It should be noted that the explanation of the temperature rise test method in the foregoing embodiments also applies to the temperature rise test device 100 in the embodiments of this application, and will not be elaborated here.

[0111] Please see Figure 5 The temperature rise testing system 200 of this application includes one or more processors 210 and a memory 220, wherein the memory 220 stores a computer program. When the computer program is executed by the processor 210, the temperature rise testing method of any of the above embodiments is implemented.

[0112] It should be noted that the explanation of the temperature rise test method in the foregoing embodiments also applies to the temperature rise test system 200 of the embodiments of this application, and will not be elaborated here.

[0113] Please see Figure 6 The computer-readable storage medium 300 of this application embodiment stores a computer program 310 thereon. When the program is executed by the processor 320, it implements the temperature rise testing method of any of the above embodiments.

[0114] It should be noted that the explanation of the temperature rise test method in the foregoing embodiments also applies to the computer-readable storage medium 300 of the embodiments of this application, and will not be elaborated here.

[0115] In summary, the temperature rise testing method, temperature rise testing device 100, temperature rise testing system 200, and computer-readable storage medium 300 of the electronic device embodiments of this application identify the material based on infrared thermal radiation data and visible light image data to determine the current material of the electronic device. Then, the current emissivity of the electronic device is calibrated based on the current material. Finally, the current temperature of the electronic device is determined based on the infrared thermal radiation data and the calibrated current emissivity. On the one hand, the infrared thermal radiation data is acquired in a non-contact manner, eliminating the need to attach thermocouples to the device surface and avoiding interference from contact measurements on the device's thermal field distribution, making it suitable for temperature rise testing of micro-devices. On the other hand, material identification based on infrared thermal radiation data and visible light image data achieves accurate matching between the emissivity parameter and the actual material of the device, overcoming the temperature measurement deviation problem caused by inaccurate emissivity settings in traditional infrared temperature measurement, and improving the accuracy of temperature rise testing.

[0116] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0117] Any process or method described in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or more executable instructions for implementing a particular logical function or process, and the scope of the preferred embodiments of this application includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order depending on the function involved, as will be understood by those skilled in the art to which embodiments of this application pertain.

[0118] The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, and can be embodied in any computer-readable storage medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, a computer-readable storage medium can be any means that can contain, store, communicate, propagate, or transmit programs for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable storage media include: an electrical connection having one or more wires (electronic device), a portable computer disk drive (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and programmable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Alternatively, the computer-readable storage medium could be paper or other suitable media on which the program can be printed, since the program can be obtained electronically, for example, by optically scanning the paper or other medium, followed by editing, interpreting, or otherwise processing as necessary, and then stored in a computer memory.

[0119] It should be understood that various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented using software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0120] Those skilled in the art will understand that all or part of the steps of the methods in the above embodiments can be implemented by a program instructing related hardware. The program can be stored in a computer-readable storage medium, and when executed, it includes one or a combination of the steps of the method embodiments. Furthermore, the functional units in the various embodiments of this application can be integrated into a processing module, or each unit can exist physically separately, or two or more units can be integrated into a module. The integrated module can be implemented in hardware or as a software functional module. If the integrated module is implemented as a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. The storage medium mentioned above can be a read-only memory, a disk, or an optical disk, etc.

[0121] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A method for testing the temperature rise of an electronic device, characterized in that, include: Acquire infrared thermal radiation data of the electronic device and visible light image data of the electronic device; Material identification is performed based on the infrared thermal radiation data and the visible light image data to determine the current material of the electronic device; The current emissivity of the electronic device is calibrated based on the current material. The current temperature of the electronic device is determined based on the infrared thermal radiation data and the calibrated current emissivity.

2. The temperature rise testing method according to claim 1, characterized in that, The calibration of the current emissivity of the electronic device based on the current material includes: Based on the current material, retrieve the emissivity parameter of the current material at the current temperature from the preset material library, and use it as the current emissivity; The preset material library stores emissivity parameters of various materials at different temperatures.

3. The temperature rise testing method according to claim 2, characterized in that, After determining the current temperature of the electronic device, the temperature rise testing method further includes: Return to the step of retrieving the emissivity parameter of the current material at the current temperature from the preset material library as the current emissivity, so as to correct the current emissivity according to the current temperature.

4. The temperature rise testing method according to claim 1, characterized in that, The temperature rise test method also includes: The theoretical temperature field corresponding to the electronic device is calculated through multiphysics thermal simulation. Determining the current temperature of the electronic device based on the infrared thermal radiation data and the calibrated current emissivity includes: The infrared thermal radiation data is fused with the theoretical temperature field to correct the infrared thermal radiation data; The current temperature is determined based on the corrected infrared thermal radiation data and the calibrated current emissivity.

5. The temperature rise testing method according to claim 1, characterized in that, The temperature rise test method also includes: The target heating area of ​​the electronic device is determined based on the infrared thermal radiation data. The acquisition of visible light image data of the electronic device includes: Obtain the visible light image data corresponding to the target heating area.

6. The temperature rise testing method according to claim 1, characterized in that, Before calibrating the current emissivity of the electronic device based on the current material, the temperature rise testing method further includes: Obtain the standard material of the electronic device as input by the user; When the current material is inconsistent with the standard material, the current material is corrected based on the standard material.

7. The temperature rise testing method according to claim 1, characterized in that, The temperature rise test method also includes: Obtain multiple current temperatures within a predetermined time period; The temperature rise test results of the electronic device are determined based on multiple current temperatures, including any one or more of the following: initial temperature, stable temperature, temperature rise curve, and temperature extreme value.

8. A temperature rise testing device for electronic devices, characterized in that, include: The acquisition module is used to acquire infrared thermal radiation data of the electronic device and visible light image data of the electronic device. The identification module is used to identify the material based on the infrared thermal radiation data and the visible light image data to determine the current material of the electronic device; A calibration module is used to calibrate the current emissivity of the electronic device based on the current material. A determination module is used to determine the current temperature of the electronic device based on the infrared thermal radiation data and the calibrated current emissivity.

9. A temperature rise testing system, characterized in that, The temperature rise testing system includes one or more processors and a memory, the memory storing a computer program, which, when executed by the processor, implements the temperature rise testing method according to any one of claims 1-7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the program is executed by the processor, it implements the temperature rise test method according to any one of claims 1-7.

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