A material vacancy type defect detection method based on a helium atom probe
CN122430366APending Publication Date: 2026-07-21SOUTHWEAT UNIV OF SCI & TECH +1
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SOUTHWEAT UNIV OF SCI & TECH
- Filing Date
- 2026-04-28
- Publication Date
- 2026-07-21
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Figure CN122430366A_ABST
Abstract
The application discloses a kind of material vacancy type defect detection methods based on helium atom probe, comprising: the surface cleaning and polishing treatment of test sample is placed in ion implantation device, and helium ion is injected to the surface layer of test sample;Test sample is carried out first stage low-temperature annealing treatment and second stage high-temperature annealing;Test sample is carried out cross section observation, and the size, density and spatial distribution characteristics of helium bubble are counted and analyzed, and the concentration and distribution information of initial vacancy type defect in test sample are inverted and quantified.The application utilizes the inherent characteristics that helium atom has extremely low solubility in material, fast migration rate and easy to be captured by vacancy to form stable bubble, uses helium atom as high-sensitivity "probe", and through controllable injection and annealing process, vacancy type defect, which is microcosmic and difficult to directly observe, is converted into helium bubble, which is easy to observe and measure under transmission electron microscope, so that intuitive, visual qualitative and quantitative detection of vacancy type defect in material is realized.
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