A sensor and a method of manufacturing the same

Abstract

The application provides a sensor and a manufacturing method thereof, which comprises the following steps: providing a substrate, forming a first electrode and a second electrode on the substrate, providing a carbon nanotube deposition source, forming carbon nanotubes between the first electrode and the second electrode under the dielectrophoresis effect, forming a patterned barrier layer on the substrate, the patterned barrier layer exposing the first electrode, the second electrode and the carbon nanotubes between the first electrode and the second electrode, providing a nanoparticle deposition source, forming nanoparticles on the surface of the exposed carbon nanotubes under the dielectrophoresis effect, and removing the barrier layer. In the application, high-oriented carbon nanotubes are first deposited by the dielectrophoresis technology, the effective loading area of the nanoparticles is defined by the patterning process, the nanoparticles are uniformly loaded on the surface of the carbon nanotubes by the dielectrophoresis technology, and finally the nanoparticles not loaded on the carbon nanotubes are removed, so that the influence of the detected object on the carrier concentration of the carbon nanotubes after the detected object is adsorbed and captured by the nanoparticles is improved, and the sensitivity of the sensor is improved.

Description

Technical Field

[0001] This invention belongs to the field of sensor technology and relates to a sensor and its manufacturing method. Background Technology

[0002] Carbon nanotubes possess intrinsic advantages such as high carrier migration speed, high specific surface area, and structural stability, making them ideal sensing materials. However, the walls of intrinsic carbon nanotubes lack binding sites for analytes, hindering their monitoring. Therefore, functionalization modifications to the nanotube walls using chemical branching and physical adsorption methods are necessary to achieve selective analyte monitoring.

[0003] Physical adsorption methods offer advantages such as simplicity, preservation of carbon nanotube structure, and no obstruction of electron transport. Non-covalent functionalization methods like evaporation, sputtering, electrochemistry, and wetting to construct composite materials of carbon nanotubes and nanoparticles are common physical adsorption methods. However, these methods load nanoparticles onto the entire device surface, failing to selectively load them onto carbon nanotubes. In low-concentration analyte environments, unbound nanoparticles (ineffective loading) may adsorb the analyte, resulting in minimal change in carbon nanotube carrier concentration and reduced sensor sensitivity. While electrochemical methods can achieve selective functionalization of carbon nanotubes (effective loading), uneven loading distribution means some nanotubes do not participate in the detection process, further limiting sensitivity.

[0004] Therefore, how to provide a sensor and its fabrication method that can uniformly load nanoparticles onto carbon nanotubes and improve the sensor's sensitivity has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a sensor and its manufacturing method to solve the problem of low detection sensitivity of carbon nanotube-based sensors in the prior art.

[0006] To achieve the above and other related objectives, the present invention provides a method for manufacturing a sensor, comprising the following steps:

[0007] A substrate is provided, and a first electrode and a second electrode arranged at intervals are formed on the substrate;

[0008] A carbon nanotube deposition source is provided, wherein the carbon nanotube deposition source is located at least between the first electrode and the second electrode, and a voltage is applied between the first electrode and the second electrode to form a carbon nanotube array between the first electrode and the second electrode under the action of dielectrophoresis;

[0009] A patterned barrier layer is formed on the substrate, the patterned barrier layer exposing the first electrode, the second electrode, and the carbon nanotube array between the first electrode and the second electrode;

[0010] A nanoparticle deposition source is provided, the nanoparticle deposition source being located at least between the exposed first electrode and the second electrode, and a voltage is applied between the first electrode and the second electrode to form nanoparticles on the surface of the exposed carbon nanotube array under dielectrophoresis.

[0011] Remove the graphical blocking layer.

[0012] Optionally, there are multiple first electrodes and multiple second electrodes, with the multiple first electrodes and multiple second electrodes arranged alternately in sequence, wherein the multiple first electrodes share a common lead-out terminal and the multiple second electrodes share a common lead-out terminal.

[0013] Optionally, the step of forming the first electrode and the second electrode on the substrate includes:

[0014] A photoresist layer is formed on the substrate, and the photoresist layer is patterned to form an opening, the opening exposing the area where the first electrode and the second electrode are to be formed;

[0015] An electrode metal layer is formed on the photoresist layer, and the electrode metal layer fills the regions of the first electrode and the second electrode exposed by the opening;

[0016] The photoresist layer is stripped away, wherein the electrode metal layer located above the photoresist layer is also removed during the removal process, and the remaining electrode metal layer constitutes the first electrode and the second electrode.

[0017] Optionally, after the carbon nanotubes are formed and before the barrier layer is formed, the step of removing any remaining carbon nanotube deposition source is included.

[0018] Optionally, after forming the nanoparticles on the surface of the carbon nanotubes, the method further includes the step of removing any remaining nanoparticle deposition sources.

[0019] Optionally, the substrate includes a stacked substrate and a dielectric layer, with the first electrode and the second electrode located on the upper surface of the dielectric layer.

[0020] The present invention also provides a sensor, comprising:

[0021] Base;

[0022] The first electrode is located on the substrate;

[0023] The second electrode is located on the substrate, and the first electrode and the second electrode are arranged at intervals.

[0024] A carbon nanotube array is located between the first electrode and the second electrode;

[0025] Nanoparticles are located on the surface of the carbon nanotube array.

[0026] Optionally, there are multiple first electrodes and multiple second electrodes, with the multiple first electrodes and multiple second electrodes arranged alternately in sequence, wherein the multiple first electrodes share a common lead-out terminal and the multiple second electrodes share a common lead-out terminal.

[0027] Optionally, the nanoparticles include one or more of metal nanoparticles and metal oxide nanoparticles.

[0028] Optionally, the substrate includes a stacked substrate and a dielectric layer, with the first electrode and the second electrode located on the upper surface of the dielectric layer.

[0029] As described above, in the sensor and its fabrication method of the present invention, a highly oriented carbon nanotube array is first deposited and assembled using dielectrophoresis technology, the effective loading region of nanoparticles is defined by patterning process, and then nanoparticles are uniformly loaded onto the surface of carbon nanotubes using dielectrophoresis technology. Finally, nanoparticles not loaded on carbon nanotubes are removed, thereby improving the effect of the analyte being adsorbed and captured by the nanoparticles on the carrier concentration of carbon nanotubes, and thus improving the sensitivity of the sensor. Attached Figure Description

[0030] Figure 1 The diagram shown is a process flow chart of the sensor manufacturing method in an embodiment of the present invention.

[0031] Figure 2 The diagram shown is a schematic representation of a substrate provided in an embodiment of the present invention, on which a photoresist layer is formed and patterned.

[0032] Figure 3 The diagram shown is a schematic diagram of the formation of a first electrode, a second electrode, a first electrode lead-out end, and a second electrode lead-out end in an embodiment of the present invention.

[0033] Figure 4 The diagram shown is a schematic representation of a carbon nanotube deposition source provided in an embodiment of the present invention.

[0034] Figure 5 The diagram shown is a schematic diagram of the formation of carbon nanotubes in an embodiment of the present invention.

[0035] Figure 6 The diagram shown is a schematic representation of the formation of a patterned barrier layer in an embodiment of the present invention.

[0036] Figure 7 The diagram shown is a schematic representation of a nanoparticle deposition source provided in an embodiment of the present invention.

[0037] Figure 8 The diagram shown is a schematic diagram of the formation of nanoparticles in an embodiment of the present invention.

[0038] Figure 9 The image shown is a three-dimensional example of a sensor in an embodiment of the present invention.

[0039] Figure 10 The image shown is an electron microscope image before the formation of nanoparticles in an embodiment of the present invention.

[0040] Figure 11 The image shown is an electron microscope image of nanoparticles formed in an embodiment of the present invention.

[0041] Component designation explanation

[0042] 1. Base

[0043] 100 substrate

[0044] 101 Dielectric Layer

[0045] 2. Photoresist layer

[0046] 200 opening

[0047] 3 First Electrode

[0048] 4 First electrode lead-out terminal

[0049] 5 Second electrode

[0050] 6 Second electrode lead-out terminal

[0051] 7 probes

[0052] 8 Carbon nanotube deposition sources

[0053] 9 Carbon nanotubes

[0054] 10 Barrier Layers

[0055] 11 Nanoparticle Deposition Source

[0056] 12 nanoparticles

[0057] 13 Carbon nanotubes loaded with nanoparticles

[0058] Steps S1 to S5 Detailed Implementation

[0059] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0060] Please see Figures 1 to 11 It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0061] This embodiment provides a method for manufacturing a sensor. Please refer to [link / reference]. Figure 1 This includes the following steps:

[0062] S1: Provide a substrate, and form a first electrode and a second electrode arranged at intervals on the substrate;

[0063] S2: Provide a carbon nanotube deposition source, wherein the carbon nanotube deposition source is located at least between the first electrode and the second electrode, and apply a voltage between the first electrode and the second electrode to form a carbon nanotube array between the first electrode and the second electrode under the action of dielectrophoresis;

[0064] S3: A patterned barrier layer is formed on the substrate, the patterned barrier layer exposing the first electrode, the second electrode, and the carbon nanotube array between the first electrode and the second electrode;

[0065] S4: Provide a nanoparticle deposition source, the nanoparticle deposition source being located at least between the exposed first electrode and the second electrode, applying a voltage between the first electrode and the second electrode, and forming nanoparticles on the exposed surface of the carbon nanotube array under dielectrophoresis.

[0066] S5: Remove the graphical blocking layer.

[0067] In the sensor fabrication method of this embodiment, a highly oriented carbon nanotube array is first deposited and assembled using dielectrophoresis. The effective loading region of the nanoparticles is defined by a patterning process. Then, the nanoparticles are uniformly loaded onto the surface of the carbon nanotubes using dielectrophoresis. Finally, the nanoparticles not loaded on the carbon nanotubes are removed. This improves the effect of the analyte being adsorbed and captured by the nanoparticles on the carrier concentration of the carbon nanotubes, thereby improving the sensitivity of the sensor.

[0068] The manufacturing method of the sensor in this embodiment will be described in detail below with reference to the specific accompanying drawings.

[0069] First, please refer to Figure 2 and Figure 3 Step S1: Provide a substrate 1, and form a first electrode 3 and a second electrode 5 arranged at intervals on the substrate 1.

[0070] As an example, the substrate 1 includes a stacked substrate 100 and a dielectric layer 101. The substrate 100 can be any suitable semiconductor substrate, and the dielectric layer 101 includes, but is not limited to, insulating dielectric layers such as silicon oxide and hafnium oxide. Specifically, in this embodiment, the substrate 100 is a p-type silicon substrate, and the dielectric layer 101 is an 800nm ​​thick silicon oxide layer. The dielectric layer 101 is formed on the substrate 100 using dry oxide deposition, atomic layer deposition, sputtering, or any other suitable method.

[0071] As an example, the dimensions of the substrate 1 are 1cm × 1cm.

[0072] As an example, the steps of forming the first electrode 3 and the second electrode 5 on the substrate 1 include:

[0073] (i) A photoresist layer 2 is formed on the substrate 1 by spin coating, and the photoresist layer 2 is patterned by laser direct writing to form an opening 200, the opening 200 exposing the area where the first electrode 3 and the second electrode 5 are to be formed.

[0074] (ii) An electrode metal layer is formed on the photoresist layer 2, and the electrode metal layer fills the area of ​​the first electrode 3 and the second electrode 5 exposed by the opening 2;

[0075] (iii) Stripping away the photoresist layer 2, wherein the electrode metal layer located above the photoresist layer 2 is removed simultaneously during the removal of the photoresist layer 2, and the remaining electrode metal layer constitutes the first electrode 3 and the second electrode 5.

[0076] As an example, the electrode metal layer may be made of conductive materials such as gold, silver, chromium, titanium, palladium, and indium tin oxide, and the thickness of the electrode metal layer may range from 20 nm to 100 nm. The methods for forming the electrode metal layer may include, but are not limited to, vapor deposition and sputtering. Specifically, in this embodiment, the electrode metal layer is composed of a stacked chromium layer and a gold layer, wherein the thickness of the chromium layer is 5 nm and the thickness of the gold layer is 45 nm. Since the gold layer has low adhesion to the dielectric layer 101, the chromium layer is used as an adhesion layer to increase adhesion.

[0077] As an example, please see the following. Figure 9The number of first electrodes 3 is multiple, and the number of second electrodes 5 is multiple. The multiple first electrodes 3 and multiple second electrodes 5 are arranged alternately in sequence. The multiple first electrodes 3 share a first electrode lead-out terminal 4, and the multiple second electrodes 5 share a second electrode lead-out terminal 6.

[0078] As an example, the opening 200 exposes the area where the first electrode lead-out 4 and the second electrode lead-out 6 are pre-formed. After the first photoresist layer 2 is stripped away, a portion of the remaining electrode metal layer constitutes the first electrode lead-out 4, and a portion constitutes the second electrode lead-out 6.

[0079] As an example, the spacing between adjacent first electrode 3 and second electrode 5 ranges from 1μm to 4μm, and can be selected according to requirements.

[0080] Next, please refer to Figure 4 and Figure 5 Step S2: Provide a carbon nanotube deposition source 8, which is located at least between the first electrode 3 and the second electrode 5. Apply a voltage between the first electrode 3 and the second electrode 5, and form an array of carbon nanotubes 9 between the first electrode 3 and the second electrode 5 under the action of dielectrophoresis.

[0081] As an example, the structure formed after the formation of the first electrode 3, the first electrode lead-out end 4, the second electrode 5, and the second electrode lead-out end 6 is placed on the probe station tray, and the substrate 100 is fixed by vacuum adsorption.

[0082] As an example, the power supply probe 7 is placed at the first electrode lead 4 and the second electrode lead 6 to apply voltage to the first electrode 3 and the second electrode 5. The applied voltage can be either DC or AC, selected according to actual needs. When applying DC voltage, one of the first electrode lead 4 and the second electrode lead 6 is a positive voltage signal, and the other is a negative voltage signal. When applying AC voltage, the voltage frequency is 1kHz-10MHz, and the effective value of the AC voltage is V. RMS The voltage is 1V-6V, with one of the first electrode lead-out terminal 4 and the second electrode lead-out terminal 6 being applied a voltage, and the other being grounded.

[0083] As an example, the carbon nanotube deposition source 8 uses a carbon nanotube dispersion with an absorbance of 0.1 Abs-1 Abs, a volume of 30 μL-150 μL, and a deposition time of 5 s-120 s.

[0084] Specifically, in this embodiment, the voltage frequency applied between the first electrode lead-out terminal 4 and the second electrode lead-out terminal 6 is 100kHz, and the effective value of the AC voltage is V. RMS The voltage is 3V, and the circuit is turned on. 50μL of xylene dispersion of carbon nanotubes is dropped onto the dielectric layer 101, and carbon nanotubes 9 are deposited under the action of dielectric electrophoresis. The deposition time is 10s, and the carbon nanotubes 9 are arranged in an array.

[0085] As an example, the carbon nanotube 9 is bridged on the first electrode 3 and the second electrode 5, that is, one end of the carbon nanotube 9 is mounted on the first electrode 3 and the other end of the carbon nanotube 9 is mounted on the second electrode 5.

[0086] As an example, after the carbon nanotubes 9 are formed, the method further includes the step of removing the residual carbon nanotube deposition source 8. In this embodiment, xylene, acetone and isopropanol are added dropwise in sequence to rinse the substrate 1, and nitrogen gas is applied for purging.

[0087] Next, please refer to Figure 6 Step S3: A patterned barrier layer 10 is formed on the substrate 1, the patterned barrier layer 10 exposing the first electrode 3, the second electrode 5 and the carbon nanotube 9 array between the first electrode 3 and the second electrode 5.

[0088] As an example, in this embodiment, the barrier layer 10 is made of photoresist. First, a photoresist layer covering the first electrode 3, the first electrode lead-out 4, the second electrode 5, the second electrode lead-out 6, and the carbon nanotube 9 is spin-coated onto the dielectric layer 101. Then, the photoresist layer is patterned using processes such as exposure and development to form the patterned barrier layer 10. In another example, a patterning method such as hydrophilic / hydrophobic treatment can also be used to form the patterned barrier layer 10, depending on the requirements.

[0089] Next, please refer to Figure 7 and Figure 9 Step S4: Provide a nanoparticle deposition source 11, which is located at least between the exposed first electrode 3 and the second electrode 5. Apply a voltage between the first electrode 3 and the second electrode 5 to form nanoparticles 12 on the surface of the exposed carbon nanotube array 9 under dielectrophoresis.

[0090] As an example, the nanoparticle deposition source 11 uses a nanoparticle dispersion in which the diameter of the nanoparticles is 2nm-50nm. The nanoparticles are nanoparticles that can respond to the analyte after being loaded onto carbon nanotubes. In this embodiment, the sensor is a hydrogen sensor and the analyte is hydrogen. The nanoparticles include, but are not limited to, palladium nanoparticles, platinum nanoparticles, metal oxide nanoparticles, and metal mixture nanoparticles.

[0091] As an example, in this embodiment, the nanoparticle deposition source 10 uses a palladium metal nanoparticle dispersion, and the diameter of the palladium metal nanoparticles is ≤5nm.

[0092] As an example, during the formation of the nanoparticles 12, an alternating current (AC) voltage or a direct current (DC) voltage can be applied between the first electrode 3 and the second electrode 5. When an AC voltage is applied, the voltage frequency is 1 kHz to 10 MHz, and the effective value of the AC voltage is V. RMS The voltage range is 1V-20V. When a DC voltage is applied, the voltage ranges from 0.1V-15V. The appropriate voltage can be selected based on the requirements.

[0093] As an example, in this embodiment, the step of forming the nanoparticles 12 includes:

[0094] (i) Place the structure after the barrier layer 10 is formed on the probe tray and turn on the vacuum adsorption to fix the substrate 100.

[0095] (ii) Place the power supply probe 7 at the first electrode lead-out terminal 4 and the second electrode lead-out terminal 6 to apply voltage to the first electrode 3 and the second electrode 2. The voltage frequency is set to 100kHz, and the effective value of the AC voltage is V. RMS It is 3.5V;

[0096] (iii) The nanoparticle deposition source 11 is dropped onto the structural surface after the barrier layer 10 is formed. The nanoparticle deposition source 11 covers the first electrode 3, the second electrode 5 and the carbon nanotube 9. The nanoparticles 12 are deposited under the action of dielectrophoresis. The deposition time is 20s-300s. The nanoparticles 12 are loaded on the surface of the carbon nanotube 9. In this embodiment, the deposition time is 60s.

[0097] (iv) After deposition for 60 seconds, buffer solution and washing solution are added dropwise to remove the residual nanoparticle deposition source 11;

[0098] (v) Dry with nitrogen gas.

[0099] As an example, after cleaning and removing the nanoparticle deposition source 11, the step further includes removing the barrier layer 10. During the process of forming the nanoparticles 12 on the carbon nanotubes 9, a small number of nanoparticles will be deposited on the barrier layer 10. During the process of removing the barrier layer 10, the nanoparticles 12 located on the barrier layer 10 are also removed, leaving only the nanoparticles 12 loaded on the carbon nanotubes 9, forming a carbon nanotube 13 loaded with nanoparticles.

[0100] For example, please refer to Figure 10 The image shown is an electron microscope image of the nanoparticles before their formation in an embodiment of the present invention. Please refer to [link / reference]. Figure 11 The image shown is an electron microscope image of the nanoparticles formed in an embodiment of the present invention. Figure 10 and Figure 11 It can be seen that there are no nanoparticles in the areas without carbon nanotubes. The nanoparticles are uniformly loaded on the surface of the carbon nanotubes, forming an effective load. When detecting hydrogen, this increases the effect of hydrogen molecules being adsorbed and captured by the nanoparticles on the carrier concentration of the carbon nanotubes, thereby improving the sensitivity of the hydrogen sensor.

[0101] As an example, this application first deposits and assembles a highly oriented carbon nanotube array using dielectrophoresis, defines the effective loading region of nanoparticles through patterning, then uniformly loads nanoparticles onto the surface of carbon nanotubes using dielectrophoresis, and finally removes nanoparticles not loaded on carbon nanotubes. This improves the effect of the analyte being adsorbed and captured by the nanoparticles on the carrier concentration of the carbon nanotubes, thereby enhancing the sensitivity of the sensor.

[0102] Thus, a sensor has been successfully manufactured. Please refer to [link / reference]. Figure 8 and Figure 9 The sensor includes a substrate 1, a first electrode 3, a second electrode 5, a carbon nanotube array, and nanoparticles. The first electrode 3 is located on the substrate 1; the second electrode 5 is located on the substrate 1, and the first electrode 3 and the second electrode 5 are arranged at intervals; the carbon nanotube array is located between the first electrode 3 and the second electrode 5; and the nanoparticles are located on the surface of the carbon nanotube array.

[0103] As an example, the substrate 1 includes a stacked substrate 100 and a dielectric layer 101. The substrate 100 can be any suitable semiconductor substrate, and the dielectric layer 101 includes, but is not limited to, insulating dielectric layers such as silicon oxide and hafnium oxide. Specifically, in this embodiment, the semiconductor substrate 100 is a P-type silicon substrate, and the dielectric layer 101 is an 800nm ​​thick silicon oxide layer.

[0104] As an example, there are multiple first electrodes 3 and multiple second electrodes 5. The multiple first electrodes 3 and multiple second electrodes 5 are arranged alternately in sequence. The multiple first electrodes 3 share a first electrode lead-out terminal 4, and the multiple second electrodes 5 share a second electrode lead-out terminal 6.

[0105] As an example, the spacing between adjacent first electrode 3 and second electrode 5 ranges from 1μm to 4μm, and can be selected according to requirements.

[0106] As an example, the carbon nanotubes are bridged on the first electrode 3 and the second electrode 5, and the nanoparticles are uniformly loaded on the surface of the carbon nanotubes to form carbon nanotubes 13 loaded with nanoparticles.

[0107] As an example, the diameter of the nanoparticles is 2nm-50nm. The nanoparticles are nanoparticles that can respond to the detected substance after being loaded on carbon nanotubes. In this embodiment, the sensor is a hydrogen sensor, the detected substance is hydrogen gas, and the nanoparticles include, but are not limited to, palladium nanoparticles, platinum nanoparticles, metal oxide nanoparticles, and metal mixture nanoparticles.

[0108] In summary, the sensor and its fabrication method of this invention first deposit and assemble a highly oriented carbon nanotube array using dielectrophoresis, then define the effective loading region of nanoparticles through patterning, and finally uniformly load nanoparticles onto the surface of the carbon nanotubes using dielectrophoresis. Finally, nanoparticles not loaded onto the carbon nanotubes are removed. This process enhances the impact of the adsorption and capture of the analyte on the carrier concentration of the carbon nanotubes, thereby improving the sensor's sensitivity. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial applicability.

[0109] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for manufacturing a sensor, characterized in that, Includes the following steps: A substrate is provided, and a first electrode and a second electrode arranged at intervals are formed on the substrate; A carbon nanotube deposition source is provided, wherein the carbon nanotube deposition source is located at least between the first electrode and the second electrode, and a voltage is applied between the first electrode and the second electrode to form a carbon nanotube array between the first electrode and the second electrode under the action of dielectrophoresis; A patterned barrier layer is formed on the substrate, the patterned barrier layer exposing the first electrode, the second electrode, and the carbon nanotube array between the first electrode and the second electrode; A nanoparticle deposition source is provided, the nanoparticle deposition source being located at least between the exposed first electrode and the second electrode, and a voltage is applied between the first electrode and the second electrode to form nanoparticles on the surface of the exposed carbon nanotube array under dielectrophoresis. Remove the graphical blocking layer.

2. The method for manufacturing the sensor according to claim 1, characterized in that: The number of first electrodes is multiple, and the number of second electrodes is multiple. The multiple first electrodes and multiple second electrodes are arranged alternately in sequence, wherein the multiple first electrodes share a common lead-out terminal, and the multiple second electrodes share a common lead-out terminal.

3. The method for manufacturing the sensor according to claim 1, characterized in that, The steps of forming the first electrode and the second electrode on the substrate include: A photoresist layer is formed on the substrate, and the photoresist layer is patterned to form an opening, the opening exposing the area where the first electrode and the second electrode are to be formed; An electrode metal layer is formed on the photoresist layer, and the electrode metal layer fills the regions of the first electrode and the second electrode exposed by the opening; The photoresist layer is stripped away, wherein the electrode metal layer located above the photoresist layer is also removed during the removal process, and the remaining electrode metal layer constitutes the first electrode and the second electrode.

4. The method for manufacturing the sensor according to claim 1, characterized in that: After the carbon nanotubes are formed but before the barrier layer is formed, the method further includes the step of removing any remaining carbon nanotube deposition source.

5. The method for manufacturing a sensor according to claim 1, characterized in that: After the nanoparticles are formed on the surface of the carbon nanotubes, the method further includes the step of removing any remaining nanoparticle deposition sources.

6. The method for manufacturing a sensor according to claim 1, characterized in that: The substrate includes a stacked substrate and a dielectric layer, with the first electrode and the second electrode located on the upper surface of the dielectric layer.

7. A sensor, characterized in that, include: Base; The first electrode is located on the substrate; The second electrode is located on the substrate, and the first electrode and the second electrode are arranged at intervals. A carbon nanotube array is located between the first electrode and the second electrode; Nanoparticles are located on the surface of the carbon nanotube array.

8. The sensor according to claim 7, characterized in that: The number of first electrodes is multiple, and the number of second electrodes is multiple. The multiple first electrodes and multiple second electrodes are arranged alternately in sequence, wherein the multiple first electrodes share a common lead-out terminal, and the multiple second electrodes share a common lead-out terminal.

9. The sensor according to claim 7, characterized in that: The nanoparticles include one or more of metal nanoparticles and metal oxide nanoparticles.

10. The sensor according to claim 7, characterized in that: The substrate includes a stacked substrate and a dielectric layer, with the first electrode and the second electrode located on the upper surface of the dielectric layer.

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