Exposure apparatus, exposure method, and method for manufacturing an article
By rotating the mask or projecting the optical elements of the optical system, the exposure device is dynamically adjusted to solve the problem of reduced exposure accuracy caused by aberrations, thereby improving the throughput of the exposure device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CANON KK
- Filing Date
- 2026-01-16
- Publication Date
- 2026-07-21
AI Technical Summary
In the prior art, aberrations in projection optics systems lead to reduced exposure accuracy, and stopping the exposure process until the aberrations return to acceptable levels reduces throughput.
By rotating the mask or optical elements in the projection optics system, the exposure device is dynamically adjusted based on information from the projection optics system to reduce the waiting time when aberrations exceed permissible values.
This increased the throughput of the exposure unit and reduced production downtime caused by waiting for aberration recovery.
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Figure CN122431060A_ABST
Abstract
Description
Technical Field
[0001] This technology relates to exposure apparatus, exposure methods, and methods for manufacturing articles. Background Technology
[0002] In the manufacturing process of semiconductor equipment or liquid crystal display equipment, exposure devices are sometimes used to expose the pattern of a mask onto a substrate using a projection optics system. The aberrations of the projection optics system vary during the exposure process, and when the aberrations exceed permissible values, the exposure accuracy deteriorates.
[0003] Japanese Patent Application Publication No. 2006-73584 discloses a method to stop the exposure process until the aberration becomes equal to or less than the allowable value.
[0004] However, in the method disclosed in Japanese Patent Application Publication No. 2006-73584, the throughput per unit time decreases when the exposure process is stopped until the aberration becomes equal to or less than the allowable value. Summary of the Invention
[0005] This technology provides an exposure device that is advantageous in terms of throughput.
[0006] According to one aspect of this disclosure, an exposure apparatus configured to expose a pattern of a mask onto a substrate is provided. The exposure apparatus includes: an illumination optics system configured to illuminate the mask; a projection optics system configured to project light from the mask onto the substrate; a rotation unit configured to rotate the mask; and a control unit configured to control the rotation unit to rotate the mask based on information about the projection optics system.
[0007] The features of this disclosure will become clear from the following description of embodiments with reference to the accompanying drawings. The following description of the embodiments is by way of example. Attached Figure Description
[0008] Figure 1 This is a schematic diagram illustrating the configuration of the exposure apparatus according to the first embodiment.
[0009] Figure 2 This is a schematic diagram of the exposure unit according to the first embodiment.
[0010] Figure 3A and Figure 3B This is a schematic diagram illustrating the exposure load on the optical elements included in the projection optics system when light is applied to the pattern of the mask.
[0011] Figure 4 It is a flowchart for rotating a mask based on information about the projection optics system.
[0012] Figure 5A and Figure 5B This is a schematic diagram of aberration changes in the area of the substrate exposed by the optical elements included in the projection optics system.
[0013] Figures 6A to 6C This is a schematic diagram showing the rotation angle of the mask when it is rotated.
[0014] Figure 7 This is a schematic diagram of the exposure unit according to the second embodiment.
[0015] Figure 8 It is a flowchart for rotating a projection optics system based on information about the projection optics system.
[0016] Figure 9 This is a schematic diagram of the exposure unit according to the second embodiment.
[0017] Figure 10 It is a flowchart for rotating the optical elements included in a projection optical system based on information about the projection optical system.
[0018] Figure 11 This is a flowchart illustrating a method for manufacturing an article according to a third embodiment. Detailed Implementation
[0019] Embodiments of the present technology will now be described in detail with reference to the accompanying drawings. It should be understood that the following embodiments do not limit the scope of this disclosure according to the claims. Although multiple features are described in the embodiments, not all features are absolutely necessary, and the embodiments can be freely combined. In the drawings, the same or similar components are given the same reference numerals, and repeated descriptions are omitted.
[0020] In this specification and accompanying drawings, the vertical direction is generally defined as the Z-axis direction, and the horizontal plane perpendicular to the vertical direction is defined as the XY plane. Directions are indicated by the XYZ coordinate system, in which the axes are orthogonal to each other. However, when indicating the XYZ coordinate system in the accompanying drawings, the XYZ coordinate system should be preferred.
[0021] The specific configurations will be described in the examples below.
[0022] First Embodiment
[0023] Figure 1 This is a schematic diagram illustrating the configuration of the exposure apparatus 1 according to this embodiment. The exposure apparatus 1 according to this embodiment is an exposure apparatus that exposes a pattern of a mask or reticle onto a substrate via a projection optical system using a step-repeat method or a step-scan method.
[0024] The exposure apparatus 1 includes a substrate loading / unloading unit 10, a substrate transfer unit 11, a pre-alignment unit 12, a mask storage device 20, a mask transfer unit 21, a mask rotation unit 22, a mask determination unit 23, an exposure unit 30, and a control unit (processing unit) 2.
[0025] The substrate loaded into the substrate loading / unloading unit 10 is transported by the substrate transfer unit 11 to the desired position within the exposure apparatus 1. The pre-alignment unit 12 pre-adjusts the substrate's position (rotation angle) before it is transported to the exposure unit 30. The mask storage device 20 stores multiple masks to be used during the exposure process. The mask transfer unit 21 includes a hand for holding the mask and transporting it to the desired position within the exposure apparatus 1. The mask rotation unit 22 rotates the mask to the desired angle. The mask determination unit 23 determines the type of mask being transported. This determination may include determining whether the transported mask is the desired type of mask.
[0026] The mask determination unit 23 includes a determination unit, such as a barcode reader or a Quick Response (QR) code® reader, and determines the type of mask by reading identification marks, such as barcodes or QR codes, provided on the mask. The position of the identification marks provided on the mask varies depending on the mask. The position of the determination unit included in the mask determination unit 23 also varies for each exposure apparatus. Therefore, the mask rotation unit 22 rotates the mask such that when the mask is transported to the mask determination unit 23, the determination unit can read the identification marks on the mask. For example, when the determination unit is configured to read identification marks located directly below, the mask rotation unit 22 pre-rotates the mask such that when the mask is transported to the mask determination unit 23, the identification marks on the mask are located directly below the determination unit. This rotation operation, for example, rotates the mask 180 degrees.
[0027] Exposure unit 30 exposes the pattern of the transported mask onto the transported substrate through a projection optical system.
[0028] Figure 2 This is a schematic diagram of the exposure unit 30 according to this embodiment. The exposure unit 30 includes an illumination optics system 3 for emitting light, a mask stage 5 for holding a mask 4, a projection optics system 6, a substrate chuck 8 for holding a substrate 7, and a substrate stage 9 movable with the substrate chuck 8 placed thereon. The mask 4 is, for example, a mask on the surface of a quartz glass substrate in which a pattern (e.g., a circuit pattern) to be transferred is formed by chromium. The substrate 7 is, for example, a single-crystal silicon substrate coated thereon with a photosensitive material (resist). The projection optics system 6 includes optical elements 6a, 6b, and 6c. Although this embodiment shows an example in which the projection optics system 6 includes three optical elements, the projection optics system 6 can include any number of optical elements.
[0029] In the exposure apparatus 1, exposure light from a light source (not shown) illuminates a mask 4 held by a mask stand 5 via an illumination optics system 3. Light passing through the mask 4 illuminates a substrate 7 via a projection optics system 6. At this time, light from the pattern formed on the mask 4 forms an image on the surface of the substrate 7, and the projection area (photosensitive material on the substrate 7) of the substrate 7 is exposed by the pattern image. The exposure apparatus 1 exposes the projection area on the substrate 7 in this way, and exposes each of the plurality of projection areas.
[0030] Control unit 2 controls the components in exposure apparatus 1. Control unit 2 includes a processing unit, a bus, read-only memory (ROM), random access memory (RAM), and storage devices. These components function according to a program. The processing unit is a processor that performs calculations for control according to a program and controls the various components connected to the bus. This processing unit can be implemented by a central processing unit (CPU), a programmable logic device (PLD) such as a field-programmable gate array (FPGA), an application-specific integrated circuit (ASIC), a computer with a program, or a combination of all or some of these. ROM is a data read-only memory device that stores programs and data. RAM is a data read / write memory device that is used to store programs and data. RAM is used to temporarily store data, such as the results of calculations performed by the CPU. Storage devices are also used to store programs and data. Storage devices are also used as temporary storage devices for programs and data of the operating system (OS) for control unit 2. Storage devices are slower in data input / output compared to RAM, but can store large amounts of data. Storage devices are preferably non-volatile storage devices that can persistently store data so that the stored data can be referenced for long periods of time. Storage devices are primarily composed of magnetic storage devices (hard disk drives (HDDs)), but can alternatively be devices that perform data reading and writing by loading external media such as compact discs (CDs), digital universal discs (DVDs), or memory cards.
[0031] The control unit 2 may be integrally formed with the other parts of the exposure apparatus 1 (in a common housing), or it may be separate from the other parts of the exposure apparatus 1 (in a separate housing).
[0032] Here, the aberrations of the projection optical system 6 change as the exposure process is performed. Specifically, when a particular mask (a particular pattern) is continuously exposed, the exposure load on a specific portion of the projection optical system 6 (at a specific rotation angle about the optical axis of the projection optical system 6) increases, resulting in a significant change in aberrations. Specifically, in the optical elements included in the projection optical system 6, the temperature increases in the area (at a specific rotation angle about the optical axis of the projection optical system 6) where the pattern of the mask 4 is irradiated by a large amount of exposure light. In the optical elements included in the projection optical system 6, the temperature is less likely to increase in the area where the exposure light is blocked by the mask 4 (excluding the openings) and therefore not irradiated by exposure light.
[0033] Figure 3A and Figure 3B This is a schematic diagram illustrating the exposure load on the optical element 6a included in the projection optical system 6 when light is applied to the pattern of the mask 4. Figure 3A and Figure 3B In the process, the mask 4 is illuminated by an effective light source formed by the illumination optics system 3. Figure 3A This is a schematic diagram illustrating the exposure load on the optical element 6a included in the projection optics system 6 when light is applied to a mask 4a having a line-and-space pattern, in which multiple rectangular patterns extending in the X-axis direction are arranged in the Y-axis direction. Figure 3A In this case, light is applied to the region along the Y-axis corresponding to the arrangement of the pattern, and the exposure load increases in this region. Figure 3B This is a schematic diagram illustrating the exposure load on the optical element 6a included in the projection optical system 6 when light is applied to a mask 4b having a line and spacing pattern, in which a plurality of rectangular patterns extending in the Y-axis direction are arranged in the X-axis direction.
[0034] exist Figure 3B In this case, light is applied to the region along the X-axis corresponding to the arrangement of the pattern, and the exposure load increases in this region.
[0035] When the aberrations of the projection optics system 6 exceed the allowable value, the exposure accuracy becomes lower than the expected exposure accuracy. As a countermeasure, there is a method to stop the exposure process until the aberrations become equal to or less than the allowable value; however, this method will reduce the throughput per unit time.
[0036] Therefore, this embodiment provides an exposure apparatus that is advantageous in terms of throughput. Specifically, the mask 4 is rotated based on information about the projection optics system 6. The mask 4 is rotated around a plane in which the pattern of the mask 4 is formed. Figure 1 and Figure 2The XY plane is rotated along an axis perpendicular to the Z-axis. This allows specific portions of the projection optics 6 that experience increased exposure load during the exposure process, corresponding to specific rotation angles around the optical axis of the projection optics 6, to be altered. Therefore, the waiting time required when employing methods that abort the exposure process until the aberration becomes equal to or less than the permissible value can be reduced.
[0037] Figure 4 This is a flowchart for rotating the mask 4 based on information about the projection optical system 6. First, the control unit 2 obtains information about the projection optical system 6 (acquisition step, S101). The information about the projection optical system 6 includes, for example, at least one of the following: measurement results of the aberrations of the projection optical system 6, prediction results of the aberrations of the projection optical system 6, measurement results of the temperature of the optical elements included in the projection optical system 6, the cumulative time of the exposure process, and the number of exposure processes. The measurement results of the aberrations of the projection optical system 6 and the measurement results of the temperature of the optical elements included in the projection optical system 6 include measured values.
[0038] The current aberration of the projection optics system 6 is obtained, for example, by measuring the light intensity received by a sensor deployed on the substrate stage 9 when driving the substrate stage 9.
[0039] The prediction of aberrations in the projection optics system 6 is performed, for example, based on the measured current aberration amount and information about exposures in subsequent manufacturing batches (exposure amount, number of projections, scanning speed during exposure, mask pattern, etc.). This prediction is obtained, for example, by adding the current aberration amounts to a value obtained by multiplying by a coefficient for the change in aberrations of the projection optics system 6, a coefficient for the aberration amount affected by the mask pattern, the exposure time (which depends on the number of projections and the scanning speed), and the exposure amount.
[0040] Temperature measurement of each optical element included in the projection optical system 6 is performed by deploying temperature sensors at specific angular locations (e.g., every 90 degrees) around the optical axis of the optical element and using the temperature sensors to measure the temperature at each location of the optical element.
[0041] The cumulative exposure time is, for example, the cumulative time when a mask with a specific pattern is continuously exposed. Continuous exposure processing includes situations where exposure is temporarily interrupted (e.g., to replace the substrate) and then immediately resumed.
[0042] The number of exposure processes refers to, for example, the number of substrates or projection areas exposed when a mask with a specific pattern is continuously subjected to exposure processes.
[0043] Next, the control unit 2 determines whether to rotate the mask 4 (determination step, S102). This determination is performed based on the information about the projection optical system 6 obtained in step S101. For example, the control unit 2 determines whether the value included in the information about the projection optical system 6 exceeds a preset allowable value, and when the value exceeds the allowable value, the control unit 2 determines to rotate the mask 4. The allowable value can be appropriately determined by the user according to the process. When the determination is based on the measurement results of the temperature of the optical elements included in the projection optical system 6, the determination can be based on the temperature difference between a first position in the optical element and a second position in the optical element that is different from the first position.
[0044] This determination can be based on a predicted value (the predicted value) of information about the projection optical system 6 in the next batch of exposure processing. In other words, this determination can be based on a predicted value regarding the state of the projection optical system 6 during the exposure process for a single batch. In other words, the determination can be based on at least one of the predicted aberrations of the projection optical system 6, the predicted temperature of the optical elements included in the projection optical system 6, the predicted cumulative time of the exposure process, and the number of exposure processes to be performed in the next batch of exposure processing. This predicted value is itself included in the information about the projection optical system 6.
[0045] In this process, the rotation angle of mask 4 can be determined. The details of the rotation angle of mask 4 will be described later.
[0046] The control unit 2 determines the destination of the mask 4 based on the determination in step S102. When the mask 4 is to be rotated, the control unit 2 controls the mask transfer unit 21 to transport the mask 4 to the rotation unit, and when the mask 4 is not to be rotated, the control unit 2 controls the mask transfer unit 21 to transport the mask 4 to the area (exposure unit 30) where the exposure process is to be performed.
[0047] If it is determined in step S102 that the mask 4 needs to be rotated, then the mask 4 is rotated (rotation step, S103). If the rotation angle of the mask 4 is also determined in step S102, then the mask 4 is rotated based on the determined angle. In particular, when the rotation angle of the mask 4 has not yet been determined, the mask 4 is rotated, for example, by a predetermined rotation angle (e.g., 90 degrees or 45 degrees). The rotation of the mask 4 in step S103 is performed by a rotation unit including a rotation mechanism for rotating the mask 4. The rotation unit is at least one of, for example, a mask rotation unit 22, a mask transfer unit 21, and a mask stage 5.
[0048] When substrate 7 already has a bottom layer pattern (the pattern of the previously exposed lower layer), the position of the bottom layer pattern and the position of the pattern to be newly exposed (the pattern position of mask 4) must be aligned. Therefore, when mask 4 is to be rotated, substrate 7 needs to be rotated synchronously with the rotation of mask 4. For example, when mask 4 is to be rotated 90 degrees, substrate 7 is also rotated 90 degrees. Examples of substrate rotation units for rotating substrate 7 include substrate transfer unit 11 and substrate stage 9.
[0049] If it is determined in step S102 that the mask 4 will not be rotated, or after the mask 4 has been rotated in step S103, the pattern formed on the mask 4 is exposed on the substrate 7 by the projection optical system 6 (exposure step, S104).
[0050] The determination of whether to rotate mask 4, as shown in the flowchart, can be performed before exposure processing of a batch, for each substrate, or before exposure processing of a specific number of batches.
[0051] Figure 5A and Figure 5B This is a schematic diagram of aberration changes in the area of the optical element included in the projection optical system 6 used to expose the substrate 7. Figure 5A This diagram illustrates a mask 4 with a specific pattern being continuously exposed without being rotated. Because light is continuously applied to specific portions of the projection optics 6 during batch exposure, aberrations increase. Conversely, since no light is applied between batches (between batches), the aberrations increased by the exposure process are temporarily reduced. Figure 5A In the example, the aberrations were within the allowable range in the first and second batches, but exceeded the allowable range in the third batch.
[0052] Figure 5B This diagram illustrates the rotation of a mask 4 with a specific pattern during continuous exposure. Figure 5B In the example, according to Figure 4 The flowchart determines whether to rotate mask 4 between batches following the second batch. Specifically, since the values included in the information regarding the projection optics system 6 in the third batch exceed permissible values, it is determined that mask 4 should be rotated, and mask 4 is rotated before the start of exposure processing in the third batch. This allows for a reduction in aberrations in the area of the optical elements included in the projection optics system 6 to be used in the exposure substrate 7 at the start of the third batch, thereby preventing aberrations from exceeding permissible values during exposure processing in the third batch.
[0053] Figures 6A to 6C This is a schematic diagram of the rotation angle when mask 4 is rotated. Figure 6AAn example of a mask 4 with a line and spacing pattern is illustrated, in which multiple rectangular patterns extending in the X-axis direction are arranged in the Y-axis direction. In this case, the direction in which aberrations occur in the optical elements included in the projection optical system 6 is the Y-axis direction. Therefore, by rotating the mask 4 by 90 degrees, the next exposure process can be performed with reduced aberrations in the area of the optical elements included in the projection optical system 6 used for exposing the substrate 7. Figure 6B An example of a mask 4 with a line and spacing pattern is illustrated, in which multiple rectangular patterns extending in the Y-axis direction are arranged in the X-axis direction. In this case, the direction in which aberrations occur in the optical elements included in the projection optical system 6 is the X-axis direction. Therefore, by rotating the mask 4 by 90 degrees, the next exposure process can be performed with reduced aberrations in the area of the optical elements included in the projection optical system 6 used for exposing the substrate 7. Figure 6C An example of a mask 4 with the following pattern is illustrated: in this pattern, multiple rectangular patterns, each tilted relative to the X-axis and Y-axis, are arranged to intersect each other. In this case, the directions in which aberrations occur in the optical elements included in the projection optical system 6 are tilted relative to the X-axis and Y-axis. Therefore, by rotating the mask 4 by 45 degrees, the next exposure process can be performed with reduced aberrations in the area of the optical elements included in the projection optical system 6 used for exposing the substrate 7.
[0054] Here, by rotating the mask 4, the marks formed on the mask 4 for aligning the mask 4 with the substrate stage 9 may deviate from the desired position (alignment position). In preparation for such a case, multiple marks can be formed on the mask 4 so that even if the mask 4 is rotated, the marks on the mask 4 are in a position where the alignment process can be performed.
[0055] According to this embodiment, by rotating the mask 4 based on information about the projection optics system 6, the waiting time required when suspending the exposure process until the aberration becomes equal to or less than the allowable value can be reduced, thereby providing an advantage in terms of throughput.
[0056] Second Embodiment
[0057] This embodiment is configured to rotate the projection optical system 6 or the optical elements included in the projection optical system 6 based on information about the projection optical system 6. Figure 7 This is a schematic diagram of the exposure unit 30 according to this embodiment. The exposure apparatus 1 according to this embodiment includes a rotation unit 41 configured to rotate the projection optical system 6 about the optical axis AX of the projection optical system 6.
[0058] Figure 8This is a flowchart for rotating the projection optical system 6 based on information about the projection optical system 6. First, the control unit 2 obtains information about the projection optical system 6 (acquisition step, S201). The information about the projection optical system 6 is the same as in the first embodiment. Next, the control unit 2 determines whether to rotate the projection optical system 6 (determination step, S202). This determination is performed based on the information about the projection optical system 6 obtained in step S201. For example, the control unit 2 determines whether a value included in the information about the projection optical system 6 exceeds a preset allowable value, and when the value exceeds the allowable value, the control unit 2 determines to rotate the projection optical system 6. The allowable value can be appropriately determined by the user according to the process. When the determination is based on the measurement results of the temperature of the optical elements included in the projection optical system 6, the determination can be based on the temperature difference between a first position in the optical element and a second position in the optical element that is different from the first position.
[0059] This determination can be based on the predicted results (predicted values) of information about the projection optical system 6 in the next batch of exposure processing. In other words, the determination can be based on at least one of the predicted results of the aberrations of the projection optical system 6, the predicted temperature of the optical elements included in the projection optical system 6, the predicted cumulative time of the exposure process, and the number of exposure processes to be performed in the next batch of exposure processing. In this determination, the rotation angle of the projection optical system 6 can be determined. The determination of the rotation angle of the projection optical system 6 is similar to the determination of the rotation angle of the mask 4 in the first embodiment.
[0060] If it is determined in step S202 that the projection optical system 6 needs to be rotated, then the projection optical system 6 is rotated (rotation step, S203). If the rotation angle of the projection optical system 6 is also determined in step S202, then the projection optical system 6 is rotated based on the determined angle. In particular, when the rotation angle of the projection optical system 6 has not yet been determined, the projection optical system 6 is rotated, for example, by a predetermined rotation angle (e.g., 90 degrees). The rotation of the projection optical system 6 in step S203 is performed by the rotation unit 41.
[0061] If it is determined in step S202 that the projection optical system 6 will not be rotated, or if the projection optical system 6 has been rotated in step S203, the pattern formed on the mask 4 is exposed on the substrate 7 through the projection optical system 6 (exposure step, S204). The determination of whether to rotate the projection optical system 6 according to the flowchart can be performed before the exposure process of a batch, for each substrate, or before the exposure process of a specific number of batches.
[0062] Figure 9This is a schematic diagram of the exposure unit 30 according to this embodiment. The exposure apparatus 1 of this embodiment includes a rotation unit 42 configured to rotate the optical elements 6a, 6b, and 6c included in the projection optical system 6 about the optical axis AX. Although this embodiment shows an example of providing rotation units 42 for each of the optical elements 6a, 6b, and 6c, it is not necessary to provide rotation units 42 for all the optical elements 6a, 6b, and 6c included in the projection optical system 6, and rotation units 42 may be provided only for specific optical elements. An example of a specific optical element to which rotation units 42 are provided is the optical element with the largest change in aberration.
[0063] Figure 10 This is a flowchart for rotating the optical elements included in the projection optical system 6 based on information about the projection optical system 6. First, the control unit 2 obtains information about the projection optical system 6 (acquisition step, S301). The information about the projection optical system 6 is the same as in the first embodiment. Next, the control unit 2 determines whether to rotate the optical elements included in the projection optical system 6 (determination step, S302). This determination is performed based on the information about the projection optical system 6 obtained in step S301. For example, the control unit 2 determines whether the value included in the information about the projection optical system 6 exceeds a preset allowable value, and when the value exceeds the allowable value, the control unit 2 determines to rotate the optical element. The allowable value can be appropriately determined by the user according to the process. When the determination is based on the measurement results of the temperature of the optical elements included in the projection optical system 6, the determination can be based on the temperature difference between a first position in the optical element and a second position in the optical element that is different from the first position.
[0064] This determination can be based on predictions of information about the projection optical system 6 in the next batch of exposure processing. In other words, the determination can be based on at least one of the following: predictions of the aberrations of the projection optical system 6, predictions of the temperature of the optical elements included in the projection optical system 6, predictions of the cumulative time of the exposure process, and the number of exposure processes to be performed in the next batch of exposure processing. In this determination, the rotation angle of the optical elements included in the projection optical system 6 can be determined. The determination of the rotation angle of the optical elements included in the projection optical system 6 is similar to the determination of the rotation angle of the mask 4 in the first embodiment. In this determination, among the multiple optical elements included in the projection optical system 6, the optical element to be rotated can be determined. In other words, even when each of the optical elements 6a, 6b, and 6c is provided with a rotation unit 42, it can be determined that only optical element 6a will be rotated.
[0065] If it is determined in step S302 that the optical element included in the projection optical system 6 needs to be rotated, then the optical element is rotated (rotation step, S303). If the rotation angle of the optical element is also determined in step S302, then the optical element is rotated based on the determined angle. In particular, when the rotation angle of the optical element has not yet been determined, the optical element is rotated, for example, by a predetermined rotation angle (e.g., 90 degrees). The rotation of the optical element in step S303 is performed by the rotation unit 42.
[0066] If it is determined in step S302 that the optical element will not be rotated, or if the optical element has been rotated in step S303, the pattern formed on the mask 4 is exposed on the substrate 7 by the projection optical system 6 (exposure step, S304). The determination of whether to rotate the optical element according to the flowchart can be performed before the exposure process of a batch, for each substrate, or before the exposure process of a specific number of batches.
[0067] According to this embodiment, by rotating the projection optics system 6 or the optical elements included in the projection optics system 6 based on information about the projection optics system 6, the waiting time required when pausing the exposure process until the aberration becomes equal to or less than the allowable value can be reduced, thereby providing an advantage in terms of throughput. Unlike the first embodiment in which the mask 4 is rotated, this embodiment eliminates the need to rotate the substrate 7 based on the rotation of the projection optics system 6 or the optical elements included in the projection optics system 6.
[0068] Third Embodiment
[0069] This embodiment relates to a method for manufacturing articles, characterized in that the articles are manufactured using the aforementioned exposure apparatus.
[0070] Figure 11 This is a flowchart illustrating a method for manufacturing an article according to this embodiment. After an acquisition step (S401) to obtain information about the projection optical system 6 included in the exposure apparatus 1, a rotation step (S402) is performed to rotate a predetermined component based on the information about the projection optical system 6 obtained in the acquisition step. After the rotation step, a forming step (S403) is performed to form a pattern on the substrate 7, and then a processing step (S404) is performed to process the substrate with the pattern formed in the forming step.
[0071] Examples of items manufactured using this method include semiconductor integrated circuit (IC) devices, liquid crystal display devices, color filters, and microelectromechanical systems (MEMS).
[0072] In the formation step, a pattern is formed on a substrate (such as a silicon wafer or glass plate) coated with a photosensitive material by exposing the substrate using an exposure device (photolithography device).
[0073] Examples of processing steps include developing a substrate (photosensitive material) on which a pattern is formed, etching and photoresist stripping of the developed substrate, dicing, bonding, and encapsulation. According to this manufacturing method, articles can be manufactured at a higher throughput per unit time than related technologies.
[0074] It should be understood that this disclosure is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of this disclosure. Therefore, the appended claims are attached to define the scope of this disclosure.
[0075] According to this technology, an exposure apparatus that is advantageous in terms of throughput can be provided.
[0076] Embodiments of this disclosure can also be implemented by a computer of a system or apparatus that reads and executes computer-executable instructions (e.g., one or more programs) recorded on a storage medium (which may also be more fully referred to as a 'non-transitory computer-readable storage medium') to perform one or more functions of the above embodiments and / or includes one or more circuits (e.g., application-specific integrated circuits (ASICs)) for performing one or more functions of the above embodiments, and by a method performed by a computer of the system or apparatus by, for example, reading and executing computer-executable instructions from the storage medium to perform one or more functions of the above embodiments and / or controlling one or more circuits to perform one or more functions of the above embodiments. The computer may include one or more processors (e.g., a central processing unit (CPU), a microprocessor unit (MPU)) and may include separate computers or networks of separate processors to read and execute computer-executable instructions. The computer-executable instructions may be provided to the computer, for example, from a network or storage medium. The storage medium may include, for example, a hard disk, random access memory (RAM), read-only memory (ROM), storage devices for distributed computing systems, optical discs (such as CDs, DVDs, or Blu-ray discs). TM One or more of the following: flash memory devices, memory cards, etc.
[0077] While this disclosure has been described with reference to embodiments, it is to be understood that this disclosure is not limited to the disclosed embodiments. The scope of the appended claims is to be given the broadest interpretation in order to cover all such modifications and equivalent structures and functions.
Claims
1. An exposure apparatus configured to expose a pattern of a mask onto a substrate, the exposure apparatus comprising: An illumination optical system configured to illuminate the mask; A projection optics system configured to project light from the mask onto the substrate; A rotating unit configured to rotate the mask; as well as A control unit configured to control the rotating unit to rotate the mask based on information about the projection optics system.
2. The exposure apparatus of claim 1, wherein the information relating to the projection optical system includes information relating to the aberrations of the projection optical system.
3. The exposure apparatus of claim 1, wherein the information relating to the projection optical system includes information regarding the temperature of the optical elements included in the projection optical system.
4. The exposure apparatus of claim 1, wherein the information relating to the projection optics system includes information regarding the cumulative time during the exposure process.
5. The exposure apparatus of claim 1, wherein the information relating to the projection optics system includes information about the number of substrates that have been exposed or the number of projection areas.
6. The exposure apparatus according to claim 1, The information concerning the projection optical system includes information about the values of measurements relating to the state of the projection optical system, and The control unit controls the rotating unit to rotate the mask based on the measured value.
7. The exposure apparatus according to claim 1, The information regarding the projection optical system includes information about predicted values concerning the state of the projection optical system, and The control unit controls the rotating unit to rotate the mask based on the predicted value.
8. The exposure apparatus of claim 7, wherein the predicted value is a predicted value relating to the state of the projection optics system when performing exposure processing on a single batch.
9. The exposure apparatus of claim 1, wherein the control unit rotates the mask when a value included in the information relating to the projection optics system exceeds a preset allowable value.
10. The exposure apparatus according to claim 1, further comprising: A mask conveying unit configured to convey the mask. Specifically, when the mask is to be rotated, the control unit controls the mask conveying unit to transport the mask to the rotation unit, and when the mask is not to be rotated, the control unit controls the mask conveying unit to transport the mask to the exposure processing area.
11. The exposure apparatus according to claim 1, wherein the control unit controls the rotating unit to rotate the mask by 45 degrees or 90 degrees.
12. The exposure apparatus of claim 1, wherein the control unit determines the rotation angle of the mask and controls the rotation unit to rotate the mask based on the determined angle.
13. The exposure apparatus according to claim 1, further comprising: A substrate rotation unit, configured to rotate the substrate. The control unit controls the substrate rotation unit to rotate the substrate based on the rotation of the mask.
14. The exposure apparatus of claim 1, wherein the rotating unit includes at least one of a mask stage, a mask conveying unit, and a mask rotating unit, the mask stage being configured to hold the mask during the exposure process, the mask conveying unit including a hand configured to hold the mask, and the mask rotating unit being configured to rotate the mask before the mask is conveyed to the mask stage.
15. An exposure apparatus configured to expose a pattern of a mask onto a substrate, the exposure apparatus comprising: An illumination optical system configured to illuminate the mask; A projection optics system configured to project light from the mask onto the substrate; A rotating unit configured to rotate the projection optical system or an optical element included in the projection optical system; as well as A control unit configured to control the rotation unit to rotate the projection optical system or optical elements included in the projection optical system based on information about the projection optical system.
16. An exposure method for exposing a mask pattern onto a substrate using a projection optics system, the method comprising: Obtain information about the projection optical system; The mask, the projection optical system, and at least one of the optical elements included in the projection optical system are rotated based on the information about the projection optical system. as well as The substrate is exposed after the rotation.
17. A method for manufacturing an article, the method comprising: Obtain information about the projection optics system included in the exposure apparatus; The predetermined component is rotated based on the information about the projection optical system obtained in the acquisition. After the rotation, a pattern is formed on the substrate by transferring the pattern of the mask onto the substrate via the projection optics system; as well as The substrate on which the pattern is formed in the formation is processed.
18. The method for manufacturing an article according to claim 17, wherein the predetermined component includes the mask, the projection optics system, and any one of the optical elements included in the projection optics system.