Radio frequency rectifying device

Abstract

The present disclosure provides a radio frequency rectifier device, comprising a first input node, a first capacitor, a second input node, a second capacitor, a first transistor element, a second transistor element, a third capacitor, a fourth capacitor, a third transistor element, a fourth transistor element, a fifth capacitor, a sixth capacitor, a first conductive element, a second conductive element, a third conductive element, a fourth conductive element, a load resistor and a load capacitor. The first conductive element, when conducting, reduces the gate voltage of the first transistor element, the second conductive element, when conducting, reduces the gate voltage of the second transistor element, the third conductive element, when conducting, increases the gate voltage of the third transistor element, and the fourth conductive element, when conducting, increases the gate voltage of the fourth transistor element, so as to reduce the leakage current and accordingly reduce the discharge interval of the transistor elements, thereby improving the power conversion efficiency.

Description

Technical Field

[0001] This disclosure relates to a radio frequency rectification device, and more particularly to a radio frequency rectification device with a self-biased voltage. Background Technology

[0002] In radio frequency (RF) energy harvesting systems, the rectifier circuit is a crucial core component. The efficiency of the rectifier circuit refers to its energy conversion efficiency in converting RF signals into DC power. This efficiency is typically determined by several factors, such as the impedance transformation rate of the matching network, diode performance, circuit architecture, input signal strength, and load impedance. Ideally, the conversion efficiency of a rectifier circuit can reach over 90%, but in practical applications, it is limited by various non-ideal factors.

[0003] The design of rectifier circuits in radio frequency (RF) power harvesting systems typically faces several challenges: First, the RF signal input strength. In current applications, RF power harvesting systems need to operate at low power levels (microwatts or nanowatts), which significantly impacts the rectifier circuit and reduces its power harvesting performance. Second, due to reverse leakage current in the rectifier circuit, when the DC voltage of the energy storage element exceeds the input voltage of the rectifier circuit, the energy storage element will discharge, resulting in lower RF power conversion efficiency. Third, while zero-threshold voltage (ZVT) process components can be used to improve the sensitivity of the rectifier circuit, this also increases the reverse leakage current of the rectifier circuit, reducing power conversion efficiency. Summary of the Invention

[0004] This disclosure provides a radio frequency rectification device, including a first input node, a first capacitor, a second input node, a second capacitor, a first transistor element, a second transistor element, a third capacitor, a fourth capacitor, a third transistor element, a fourth transistor element, a fifth capacitor, a sixth capacitor, a first conductive element, a second conductive element, a third conductive element, a fourth conductive element, a load resistor, and a load capacitor. The first capacitor is connected to the first input node and the first node; the second capacitor is connected to the second input node and the second node; the first transistor element is connected between the first node and a ground terminal; the second transistor element is connected between the second node and a ground terminal; the third capacitor is connected to the first node and the second transistor element; the fourth capacitor is connected to the second node and the first transistor element; the third transistor element is connected between the first node and an output node; the fourth transistor element is connected between the second node and the output node; the fifth capacitor is connected to the first node and the fourth transistor element; and the sixth capacitor is connected to the second node and the third transistor element. A first conductive element is connected to a first transistor and ground. When conducting, the first conductive element reduces the voltage at the first gate of the first transistor. A second conductive element is connected to a second transistor and ground. When conducting, the second conductive element reduces the voltage at the second gate of the second transistor. A third conductive element is connected to a third transistor and the output node. When conducting, the third conductive element increases the voltage at the third gate of the third transistor. A fourth conductive element is connected to a fourth transistor and the output node. When conducting, the fourth conductive element increases the voltage at the fourth gate of the fourth transistor. One end of a load resistor and one end of a load capacitor are connected to the output node.

[0005] In this embodiment, when the first radio frequency (RF) signal of the first input node is greater than the second RF signal of the second input node, the second and third transistor elements are in a conductive state, while the first and fourth transistor elements are in a cutoff state. The RF input current of the first RF signal charges the load capacitor to convert the first RF signal into a DC voltage. When the second RF signal of the second input node is greater than the first RF signal of the first input node, the first and fourth transistor elements are in a conductive state, while the second and third transistor elements are in a cutoff state. The RF input current of the second RF signal charges the load capacitor to convert the second RF signal into a DC voltage.

[0006] In this embodiment, the first source of the first transistor element is connected to the ground terminal, the first drain is connected to the first node, and the first gate is connected to the first conductive element and the fourth capacitor. When the voltage difference between the second radio frequency signal and the common mode voltage of the ground terminal is greater than the threshold voltage of the first conductive element, the first conductive element conducts electricity, and the voltage of the first gate of the first transistor element decreases to reduce the leakage current of the first transistor element.

[0007] In this embodiment, the second source of the second transistor element is connected to the ground terminal, the second drain is connected to the second node, and the second gate is connected to the second conductive element and the third capacitor. When the voltage difference between the first radio frequency signal and the common mode voltage of the ground terminal is greater than the threshold voltage of the second conductive element, the second conductive element conducts electricity, and the voltage of the second gate of the second transistor element decreases to reduce the leakage current when the second transistor element is turned off.

[0008] In this embodiment, the third source of the third transistor element is connected to the first node, the third drain is connected to the output node, and the third gate is connected to the third conductive element and the sixth capacitor. When the voltage difference between the second radio frequency signal and the DC voltage of the output node is greater than the threshold voltage of the third conductive element, the third conductive element conducts electricity, and the voltage of the third gate of the third transistor element increases to reduce the leakage current of the third transistor element.

[0009] In this embodiment, the fourth source of the fourth transistor element is connected to the second node, the fourth drain is connected to the output node, and the fourth gate is connected to the fourth conductive element and the fifth capacitor. When the voltage difference between the first radio frequency signal and the DC voltage of the output node is greater than the threshold voltage of the fourth conductive element, the fourth conductive element conducts electricity, and the voltage of the fourth gate of the fourth transistor element increases to reduce the leakage current of the fourth transistor element.

[0010] In the embodiments, the first transistor element and the second transistor element are N-type metal-oxide-semiconductor field-effect transistors; and the third transistor element and the fourth transistor element are P-type metal-oxide-semiconductor field-effect transistors.

[0011] In the embodiments, the first conductive element, the second conductive element, the third conductive element, and the fourth conductive element are diodes or diode-connected transistors.

[0012] In the embodiments, the first conductive element and the second conductive element are P-type metal-oxide-semiconductor field-effect transistors; and the third conductive element and the fourth conductive element are N-type metal-oxide-semiconductor field-effect transistors.

[0013] This disclosure further provides an RF rectification device, including a first input node, a second input node, multiple RF rectification units, a load resistor, and a load capacitor, to form a multi-stage RF rectification device through multiple RF rectification units connected in series. In the RF rectification device, multiple RF rectification units are connected between the first input node and the second input node and are sequentially connected in series. One end of the load resistor is connected to the output node of the last RF rectification unit, and one end of the load capacitor is also connected to the output node of the last RF rectification unit. Each RF rectification unit includes a first capacitor, a second capacitor, a first transistor element, a second transistor element, a third capacitor, a fourth capacitor, a third transistor element, a fourth transistor element, a fifth capacitor, a sixth capacitor, a first conductive element, a second conductive element, a third conductive element, and a fourth conductive element.

[0014] In summary, in order to improve the conversion efficiency of rectifiers operating at low RF input power levels without increasing the transistor conduction resistance at high RF input signal levels, this disclosure proposes an RF rectifier that uses a dual-loop self-bias feedback technology in a differential cross-coupled rectifier to improve the lack of reverse leakage current in a full-wave rectifier, thereby improving the power conversion efficiency of the rectifier operating at low RF input power levels. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the architecture of a radio frequency energy harvesting system according to the present disclosure.

[0016] Figure 2 This is a circuit diagram of an RF rectifier apparatus according to an embodiment of the present disclosure.

[0017] Figure 3 This is a schematic diagram of the charging path of the radio frequency rectification device according to the present disclosure for the differential radio frequency signal.

[0018] Figure 4 This is a node waveform diagram of the second transistor element in the radio frequency rectification device according to the present disclosure.

[0019] Figure 5 This is a node waveform diagram of the third transistor element in the radio frequency rectification device according to the present disclosure.

[0020] Figure 6 This is a circuit diagram of a radio frequency rectification device according to another embodiment of the present disclosure.

[0021] Figure 7 This is a circuit diagram of an RF rectifier device integrating multiple RF rectifier units according to an embodiment of the present disclosure. Detailed Implementation

[0022] The following provides a detailed description of preferred embodiments; however, these embodiments are merely illustrative and do not limit the scope of protection intended by this disclosure. Furthermore, some elements are omitted from the accompanying drawings in the embodiments to clearly illustrate the technical features of this disclosure. The same reference numerals will be used to denote the same or similar elements in all the drawings.

[0023] Figure 1 For a schematic diagram of the architecture of the radio frequency energy harvesting system according to this disclosure, please refer to... Figure 1 As shown, the radio frequency (RF) energy harvesting system 10 includes an antenna 12, an input matching network 14, an RF rectifier 16, an energy storage element 18, and a power management unit 20. The antenna 12 captures an RF signal VRF from the environment, and the design and selection of the antenna 12 are determined based on the frequency and power level of the RF signal VRF to be captured. The input matching network 14 is connected to the antenna 12 to receive the RF signal VRF and perform impedance matching to achieve maximum transmission power. The RF rectifier 16 is connected to the input matching network 14 to receive the matched RF signal VRF and convert it into a DC voltage VRec. The special design of the RF rectifier 16 achieves the effects of this disclosure. The power management unit 20 is connected to the RF rectifier 16 to convert the DC voltage VRec into a voltage signal VDC at a specific voltage level for use by the target device. The power management unit 20 is either a boost converter or a buck converter, and the appropriate circuit components are selected according to the power requirements of the target device. Energy storage element 18 is connected between RF rectifier 16 and power management unit 20 to store DC voltage VRec until RF rectifier 16 generates sufficient DC voltage VRec. It should be noted that the term "connection" as used in this disclosure may include "coupling," which can refer to two or more components making direct physical or electrical contact with each other, or indirectly making physical or electrical contact with each other, or it may refer to two or more components operating or moving together.

[0024] Please see Figure 2As shown, the RF rectifier 16 includes a first input node 22, a first capacitor C1, a second input node 24, a second capacitor C2, a first transistor element M1, a second transistor element M2, a third capacitor C3, a fourth capacitor C4, a third transistor element M3, a fourth transistor element M4, a fifth capacitor C5, a sixth capacitor C6, a first conductive element 26, a second conductive element 28, a third conductive element 30, a fourth conductive element 32, a load resistor RL, and a load capacitor CL. In the RF rectifier 16, the received differential RF signals include a first RF signal VRF+ and a second RF signal VRF-, causing the first input node 22 to input the first RF signal VRF+ and the second input node 24 to input the second RF signal VRF-. The two ends of the first capacitor C1 are connected to the first input node 22 and the first node N1, respectively, and the two ends of the second capacitor C2 are connected to the second input node 24 and the second node N2, respectively. A first transistor element M1 is connected between the first node N1 and the ground terminal 34. The first transistor element M1 includes a first source, a first drain, and a first gate. The first source is connected to the ground terminal 34, the first drain is connected to the first node N1, and the first gate is connected to the first conductive element 26 and the fourth capacitor C4. A second transistor element M2 is connected between the second node N2 and the ground terminal 34. The second transistor element M2 includes a second source, a second drain, and a second gate. The second source is connected to the ground terminal 34, the second drain is connected to the second node N2, and the second gate is connected to the second conductive element 28 and the third capacitor C3. One end of the third capacitor C3 is connected to the first node N1, and the other end is connected to the second gate of the second transistor element M2. One end of the fourth capacitor C4 is connected to the second node N2, and the other end is connected to the first gate of the first transistor element M1. A third transistor element M3 is connected between the first node N1 and the output node 36. The third transistor element M3 includes a third source, a third drain, and a third gate. The third source is connected to the first node N1, the third drain is connected to the output node 36, and the third gate is connected to the third conductive element 30 and the sixth capacitor C6. A fourth transistor element M4 is connected between the second node N2 and the output node 36. The fourth transistor element M4 includes a fourth source, a fourth drain, and a fourth gate. The fourth source is connected to the second node N2, the fourth drain is connected to the output node 36, and the fourth gate is connected to the fourth conductive element 32 and the fifth capacitor C5. One end of the fifth capacitor C5 is connected to the first node N1, and the other end is connected to the fourth gate of the fourth transistor element M4. One end of the sixth capacitor C6 is connected to the second node N2, and the other end is connected to the third gate of the third transistor element M3. In this embodiment, the first transistor element M1 and the second transistor element M2 are N-type metal-oxide-semiconductor field-effect transistors (NMOS FETs), and the third transistor element M3 and the fourth transistor element M4 are P-type metal-oxide-semiconductor field-effect transistors (PMOS FETs).

[0025] See also Figure 2 As shown, the first conductive element 26 is connected to the first transistor element M1 and the ground terminal 34. In this embodiment, the first conductive element 26 is a diode-connected transistor, such as a P-type metal-oxide-semiconductor field-effect transistor. The source of the first conductive element 26 is connected to the first gate of the first transistor element M1, the drain of the first conductive element 26 is connected to the ground terminal 34, and the gate of the first conductive element 26 is connected to its own drain to form a self-bias feedback. When the first conductive element 26 conducts, it will reduce the voltage of the first gate of the first transistor element M1 to reduce the leakage current flowing through the first drain and the first source in the first transistor element M1. The second conductive element 28 is connected to the second transistor element M2 and the ground terminal 34. In this embodiment, the second conductive element 28 is a diode-connected transistor, such as a P-type metal-oxide-semiconductor field-effect transistor. The source of the second conductive element 28 is connected to the second gate of the second transistor element M2, the drain of the second conductive element 28 is connected to the ground terminal 34, and the gate of the second conductive element 28 is connected to its own drain to form a self-bias feedback. When the second conductive element 28 is conductive, it will reduce the voltage of the second gate of the second transistor element M2 to reduce the leakage current flowing through the second drain and the second source in the second transistor element M2. The third conductive element 30 is connected to the third transistor element M3 and the output node 36. In this embodiment, the third conductive element 30 is a diode-connected transistor, such as an N-type metal-oxide-semiconductor field-effect transistor. The source of the third conductive element 30 is connected to the output node 36, and the drain of the third conductive element 30 is connected to the third gate of the third transistor element M3. The gate of the third conductive element 30 is connected to its own drain to form a self-bias feedback. When the third conductive element 30 is conductive, it will increase the voltage of the third gate of the third transistor element M3 to reduce the leakage current flowing through the third drain and the third source in the third transistor element M3. The fourth conductive element 32 connects the fourth transistor element M4 and the output node 36. In this embodiment, the fourth conductive element 32 is a diode-connected transistor, such as an N-type metal-oxide-semiconductor field-effect transistor. The source of the fourth conductive element 32 is connected to the output node 36, and the drain of the fourth conductive element 32 is connected to the fourth gate of the fourth transistor element M4. The gate of the fourth conductive element 32 is connected to its own drain to form a self-bias feedback. When the fourth conductive element 32 is conductive, it increases the voltage of the fourth gate of the fourth transistor element M4, thereby reducing the leakage current flowing through the fourth drain and the fourth source in the fourth transistor element M4. One end of the load resistor RL is connected to the output node 36, and the other end is connected to the ground terminal 34. One end of the load capacitor CL is connected to the output node 36, and the other end is also connected to the ground terminal 34.

[0026] Please also refer to Figure 3 and Figure 4As shown, when the RF rectifier 16 receives a differential RF signal, if the first RF signal VRF+ at the first input node 22 is greater than the second RF signal VRF- at the second input node 24, the second gate voltage VG2 of the second transistor element M2 is greater than or equal to the second source voltage (i.e., the common-mode voltage VCM). The second transistor element M2 is in a conducting state, and the first transistor element M1 is in a cutoff state. The operating cycle of the second transistor element M2 in the conducting state at this time consists of the discharge interval of the load capacitor CL and the charging interval of the first RF signal VRF+. When the second gate voltage VG2 is greater than or equal to the second drain voltage VD2, which is greater than or equal to the common-mode voltage VCM (also the second source voltage), i.e., VCM≦VD2≦VG2, the operating cycle of the second transistor element M2 in the conducting state is the discharge interval of the load capacitor CL. When the second gate voltage VG2 is greater than or equal to the common-mode voltage VCM (which is also the second source voltage) and greater than or equal to the second drain voltage VD2 (i.e., VD2≦VCM≦VG2), the operating cycle of the second transistor element M2 in the conducting state is the charging interval of the first RF signal VRF+. The RF input current IRF+ of the first RF signal VRF+ charges the load capacitor CL to convert the first RF signal VRF+ into a DC voltage VRec. During the conducting state of the second transistor element M2, when the voltage difference between the first RF signal VRF+ and the common-mode voltage VCM at the ground terminal 34 is greater than the threshold voltage of the second conductive element 28, the second conductive element 28 conducts, the second gate voltage VG2 of the second transistor element M2 decreases, reducing the leakage current of the second transistor element M2, thereby reducing the discharge interval and thus improving the power conversion efficiency of the RF rectifier device 16.

[0027] Please also refer to Figure 3 and Figure 5As shown, when the first radio frequency signal VRF+ at the first input node 22 is greater than the second radio frequency signal VRF- at the second input node 24, the third source voltage VS3 of the third transistor element M3 is greater than or equal to the third gate voltage VG3, the third transistor element M3 is in a conducting state, and the fourth transistor element M4 is in a cutoff state. The operating cycle of the third transistor element M3 in the conducting state at this time consists of the discharge interval of the load capacitor CL and the charging interval of the first radio frequency signal VRF+. When the DC voltage VRec is greater than or equal to the third source voltage VS3 and greater than or equal to the third gate voltage VG3, i.e., VG3≦VS3≦VRec, the operating cycle of the third transistor element M3 in the conducting state is the discharge interval of the load capacitor CL. When the third source voltage VS3 is greater than or equal to the DC voltage VRec and greater than or equal to the third gate voltage VG3 (i.e., VG3≦VRec≦VS3), the operating cycle of the third transistor element M3 in the conducting state is the charging interval of the first RF signal VRF+. The RF input current IRF+ of the first RF signal VRF+ charges the load capacitor CL to convert the first RF signal VRF+ into the DC voltage VRec. During the conducting state of the third transistor element M3, when the voltage difference between the second RF signal VRF- and the DC voltage VRec of the output node 36 is greater than the threshold voltage of the third conductive element 30, the third conductive element 30 conducts, the third gate voltage VG3 of the third transistor element M3 increases, the leakage current of the third transistor element M3 decreases, thereby reducing the discharge interval and thus improving the power conversion efficiency of the RF rectifier device 16.

[0028] Similarly, such as Figure 3As shown, when the second radio frequency signal VRF- of the second input node 24 is greater than the first radio frequency signal VRF+ of the first input node 22, the first transistor element M1 and the fourth transistor element M4 are in a conducting state, while the second transistor element M2 and the third transistor element M3 are in a cut-off state. The radio frequency input current IRF- of the second radio frequency signal VRF- charges the load capacitor CL to convert the second radio frequency signal VRF- into a DC voltage VRec. Then, when the voltage difference between the second radio frequency signal VRF- and the common mode voltage VCM of the ground terminal 34 is greater than the threshold voltage of the first conductive element 26, the first conductive element 26 conducts, the voltage of the first gate of the first transistor element M1 decreases, the leakage current of the first transistor element M1 decreases, thereby reducing the discharge interval of the first transistor element M1 and thus improving the power conversion efficiency of the radio frequency rectifier 16. When the voltage difference between the first radio frequency signal VRF+ and the DC voltage VRec of the output node 36 is greater than the threshold voltage of the fourth conductive element 32, the fourth conductive element 32 conducts electricity, the voltage of the fourth gate of the fourth transistor element M4 increases, the leakage current of the fourth transistor element M4 decreases, thereby reducing the discharge interval of the fourth transistor element M4 and thus improving the power conversion efficiency of the radio frequency rectifier 16.

[0029] In another embodiment, please also refer to Figure 2 and Figure 6 As shown, in the RF rectifier 16, in addition to using diode-connected transistors, the first conductive element 26, the second conductive element 28, the third conductive element 30, and the fourth conductive element 32 can also be diodes, such as... Figure 6 As shown, the voltage of the first gate of the first transistor element M1 is reduced by the conduction of the first conductive element 26, the voltage of the second gate of the second transistor element M2 is reduced by the conduction of the second conductive element 28, the voltage of the third gate of the third transistor element M3 is increased by the conduction of the third conductive element 30, and the voltage of the fourth gate of the fourth transistor element M4 is increased by the conduction of the fourth conductive element 32, thereby reducing the leakage current of the first transistor element M1, the second transistor element M2, the third transistor element M3 and the fourth transistor element M4 respectively, so as to reduce the reverse leakage current.

[0030] In the embodiments, the entire architecture of the radio frequency rectification device 16 of this disclosure is not limited to being fabricated in a complementary metal-oxide-semiconductor (CMOS) process, nor is it limited to using a process with ultra-low threshold voltage (ULVT), low threshold voltage (LVT), standard threshold voltage (SVT), high threshold voltage (HVT), and extra-high threshold voltage (EHVT) component characteristics.

[0031] Please see Figure 7 As shown, the RF rectification device 16 includes a first input node 22, a second input node 24, multiple RF rectification units 40, 42, 44, a load resistor RL, and a load capacitor CL, forming a multi-stage RF rectification device through multiple RF rectification units 40, 42, and 44 connected in series. In the RF rectification device 16, multiple RF rectification units 40, 42, and 44 are respectively connected between the first input node 22 and the second input node 24. Here, three RF rectification units 40, 42, and 44 are used as an example, but this disclosure is not limited to this number. These RF rectification units 40, 42, and 44 are connected in series in sequence. One end of the load resistor RL is connected to the output node 36' of the last RF rectification unit 44, and one end of the load capacitor CL is also connected to the output node 36' of the last RF rectification unit 44, thereby forming a multi-stage RF rectification device. Each RF rectifier unit 40, 42, and 44 includes a first capacitor C1, a second capacitor C2, a first transistor element M1, a second transistor element M2, a third capacitor C3, a fourth capacitor C4, a third transistor element M3, a fourth transistor element M4, a fifth capacitor C5, a sixth capacitor C6, a first conductive element 26, a second conductive element 28, a third conductive element 30, and a fourth conductive element 32. The detailed connection relationships and operations of each RF rectifier unit 40, 42, and 44 are described below. Figure 2 and Figure 3 The embodiments shown are the same, so please refer to the foregoing description and we will not repeat it here.

[0032] In summary, in order to improve the conversion efficiency of rectifiers operating at low RF input power levels without increasing the transistor conduction resistance at high RF input signal levels, this disclosure proposes an RF rectifier that uses a dual-loop self-bias feedback technology in a differential cross-coupled rectifier to improve the lack of reverse leakage current in a full-wave rectifier, thereby improving the power conversion efficiency of the rectifier operating at low RF input power levels.

[0033] The embodiments described above are merely for illustrating the technical ideas and features of this disclosure. Their purpose is to enable those skilled in the art to understand the content of this disclosure and implement it accordingly. They should not be used to limit the patent scope of this disclosure. That is, all equivalent changes or modifications made in accordance with the spirit of this disclosure should still be covered within the scope of the patent application of this disclosure.

[0034] [Symbol Explanation]

[0035] 10: Radio Frequency Energy Harvesting System

[0036] 12: Antenna

[0037] 14: Input Matching Network

[0038] 16: Radio Frequency Rectifier

[0039] 18: Energy storage components

[0040] 20: Power Management Unit

[0041] 22: First input node

[0042] 24: Second Input Node

[0043] 26: First conductive element

[0044] 28: Second conductive element

[0045] 30: Third conductive element

[0046] 32: Fourth conductive element

[0047] 34: Grounding terminal

[0048] 36,36': Output node

[0049] 40, 42, 44: Radio frequency rectification unit

[0050] C1: First capacitor

[0051] C2: Second capacitor

[0052] C3: Third capacitor

[0053] C4: Fourth capacitor

[0054] C5: Fifth capacitor

[0055] C6: Sixth capacitor

[0056] CL: Load capacitance

[0057] IRF+: Radio frequency input current

[0058] IRF-: Radio Frequency Input Current

[0059] M1: First transistor element

[0060] M2: Second transistor element

[0061] M3: Third transistor element

[0062] M4: Fourth transistor element

[0063] N1: First node

[0064] N2: Second node

[0065] RL: Load resistance

[0066] VCM: Common-mode voltage

[0067] VDC: Voltage signal

[0068] VD2: Second drain voltage

[0069] VG2: Second gate voltage

[0070] VG3: Third gate voltage

[0071] VS3: Third source voltage

[0072] VRec: DC voltage

[0073] VRF: Radio Frequency Signal

[0074] VRF+: First radio frequency signal

[0075] VRF - Second radio frequency signal

Claims

1. A radio frequency rectification device, comprising: First input node; The first capacitor is connected to the first input node and the first node; Second input node; The second capacitor is connected to the second input node and the second node; A first transistor element is connected between the first node and the ground terminal; A second transistor element is connected between the second node and the ground terminal; The third capacitor connects the first node and the second transistor element; The fourth capacitor connects the second node and the first transistor element; A third transistor element is connected between the first node and the output node; A fourth transistor element is connected between the second node and the output node; The fifth capacitor connects the first node and the fourth transistor element; The sixth capacitor connects the second node and the third transistor element; A first conductive element is connected to the first transistor element and the ground terminal. When the first conductive element is conducting electricity, it reduces the voltage of the first gate of the first transistor element. The second conductive element is connected to the second transistor element and the ground terminal. When the second conductive element is conductive, it reduces the voltage of the second gate of the second transistor element. A third conductive element connects the third transistor element and the output node. When the third conductive element is conductive, it increases the voltage of the third gate of the third transistor element. A fourth conductive element connects the fourth transistor element and the output node, and when the fourth conductive element is conductive, it increases the voltage of the fourth gate of the fourth transistor element; A load resistor, the end of which is connected to the output node; and A load capacitor, the end of which is connected to the output node.

2. The radio frequency rectification device according to claim 1, wherein when the first radio frequency signal of the first input node is greater than the second radio frequency signal of the second input node, the second transistor element and the third transistor element are in a conductive state, the first transistor element and the fourth transistor element are in a cutoff state, and the radio frequency input current of the first radio frequency signal charges the load capacitor to convert the first radio frequency signal into a DC voltage; and when the second radio frequency signal of the second input node is greater than the first radio frequency signal of the first input node, the first transistor element and the fourth transistor element are in a conductive state, the second transistor element and the third transistor element are in a cutoff state, and the radio frequency input current of the second radio frequency signal charges the load capacitor to convert the second radio frequency signal into the DC voltage.

3. The radio frequency rectification device according to claim 2, wherein the first source of the first transistor element is connected to the ground terminal, the first drain is connected to the first node, the first gate is connected to the first conductive element and the fourth capacitor, and when the voltage difference between the second radio frequency signal and the common mode voltage of the ground terminal is greater than the threshold voltage of the first conductive element, the first conductive element conducts electricity, and the voltage of the first gate of the first transistor element decreases to reduce the leakage current of the first transistor element.

4. The radio frequency rectification device according to claim 2, wherein the second source of the second transistor element is connected to the ground terminal, the second drain is connected to the second node, the second gate is connected to the second conductive element and the third capacitor, and when the voltage difference between the first radio frequency signal and the common mode voltage of the ground terminal is greater than the threshold voltage of the second conductive element, the second conductive element conducts electricity, and the voltage of the second gate of the second transistor element decreases to reduce the leakage current of the second transistor element.

5. The radio frequency rectification device according to claim 2, wherein the third source of the third transistor element is connected to the first node, the third drain is connected to the output node, the third gate is connected to the third conductive element and the sixth capacitor, and when the voltage difference between the second radio frequency signal and the DC voltage of the output node is greater than the threshold voltage of the third conductive element, the third conductive element conducts electricity, and the voltage of the third gate of the third transistor element increases to reduce the leakage current of the third transistor element.

6. The radio frequency rectification device according to claim 2, wherein the fourth source of the fourth transistor element is connected to the second node, the fourth drain is connected to the output node, the fourth gate is connected to the fourth conductive element and the fifth capacitor, and when the voltage difference between the first radio frequency signal and the DC voltage of the output node is greater than the threshold voltage of the fourth conductive element, the fourth conductive element conducts electricity, and the voltage of the fourth gate of the fourth transistor element increases to reduce the leakage current of the fourth transistor element.

7. The radio frequency rectification device according to claim 1, wherein the first transistor element and the second transistor element are N-type metal-oxide-semiconductor field-effect transistors; and the third transistor element and the fourth transistor element are P-type metal-oxide-semiconductor field-effect transistors.

8. The radio frequency rectification device according to claim 1, wherein the first conductive element, the second conductive element, the third conductive element and the fourth conductive element are diodes.

9. The radio frequency rectification device according to claim 1, wherein the first conductive element, the second conductive element, the third conductive element and the fourth conductive element are diode-connected transistors.

10. A radio frequency rectification device, comprising: First input node; Second input node; Multiple radio frequency (RF) rectification units are connected between the first input node and the second input node and are sequentially connected in series. Each RF rectification unit includes: The first capacitor is connected to the first input node and the first node; The second capacitor is connected to the second input node and the second node; A first transistor element is connected between the first node and the ground terminal; A second transistor element is connected between the second node and the ground terminal; The third capacitor connects the first node and the second transistor element; The fourth capacitor connects the second node and the first transistor element; A third transistor element is connected between the first node and the output node; A fourth transistor element is connected between the second node and the output node; The fifth capacitor connects the first node and the fourth transistor element; The sixth capacitor connects the second node and the third transistor element; A first conductive element is connected to the first transistor element and the ground terminal. When the first conductive element is conducting electricity, it reduces the voltage of the first gate of the first transistor element. The second conductive element is connected to the second transistor element and the ground terminal. When the second conductive element is conductive, it reduces the voltage of the second gate of the second transistor element. A third conductive element connects the third transistor element and the output node; when conducting electricity, the third conductive element increases the voltage of the third gate of the third transistor element. A fourth conductive element connects the fourth transistor element and the output node, and when the fourth conductive element is conductive, it increases the voltage of the fourth gate of the fourth transistor element; A load resistor, one end of which is connected to the output node of the last RF rectifier unit; and A load capacitor, the end of which is connected to the output node of the last RF rectifier unit.

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