Semiconductor device and manufacturing method, power module, power conversion circuit, and vehicle

By setting an insulating layer and a source polysilicon state control layer on the first surface of the semiconductor body, the freewheeling loss and bipolar degradation problems of silicon carbide or gallium nitride MOSFET devices are solved, resulting in lower power loss and improved electrical performance.

CN122438360APending Publication Date: 2026-07-21YOFC ADVANCED SEMICONDUCTOR (WUHAN) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
YOFC ADVANCED SEMICONDUCTOR (WUHAN) CO LTD
Filing Date
2026-04-27
Publication Date
2026-07-21

AI Technical Summary

Technical Problem

Third-generation wide-bandgap semiconductor MOSFETs, such as silicon carbide or gallium nitride, suffer from significant freewheeling losses and bipolar degradation in freewheeling mode, which affects their electrical performance.

Method used

An insulating layer and a state control layer are stacked on the first surface of the semiconductor body. The state control layer includes source polysilicon. By applying a high potential signal in reverse conduction mode, a reverse conduction current is formed in front of the body diode composed of the well region and the epitaxial layer, avoiding the body diode from conducting and achieving a lower reverse freewheeling conduction voltage.

Benefits of technology

It reduces the power loss of semiconductor devices and effectively eliminates the bipolar degradation phenomenon of body diodes, thus improving electrical performance.

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Abstract

The application discloses a semiconductor device and a manufacturing method, a power module, a power conversion circuit and a vehicle. The semiconductor device comprises at least one device cell arranged in an array; the device cell comprises: a semiconductor body provided as a first conductive type and comprising a first surface; the semiconductor body further comprises a well region and a first region; an insulating layer is located on the first surface; a state control layer is located on a side of the insulating layer away from the semiconductor body, and the insulating layer is used for insulating the semiconductor body and the state control layer; the state control layer comprises source polysilicon; a source electrode is located on a side of the state control layer away from the insulating layer; and the source polysilicon is electrically connected with the source electrode. The embodiment of the application can reduce the freewheeling loss of the semiconductor device and eliminate the bipolar degradation phenomenon.
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