Semiconductor structure and method of forming the same

Abstract

The application provides a semiconductor structure and a forming method thereof. The semiconductor structure comprises a semiconductor substrate, a PMOS structure is formed on the surface of the semiconductor substrate, the PMOS structure comprises a fin and a gate structure covering the top and sidewall of the fin; the gate structure on the top of the fin comprises a second metal layer and a third metal layer stacked from bottom to top in sequence, and the resistivity of the third metal layer is less than that of the second metal layer. The application provides a semiconductor structure and a forming method thereof. By reducing the titanium nitride of the gate structure in the PULVT device, the gate resistance difference between the PULVT and the NULVT is reduced, and the N / P MOS transmission signal synchronization rate is improved.

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