LED light emitting module, LED package structure and related manufacturing method

Abstract

The application relates to an LED light-emitting module, an LED packaging structure and a related manufacturing method, and relates to the technical field of semiconductor light emission. Each light-emitting diode chip is packaged in advance, a plurality of annular grooves are formed in the first packaging layer, each annular groove surrounds a corresponding light-emitting diode chip, a magnetic adsorption structure is formed in each annular groove, the magnetic adsorption structure is embedded into a plurality of second grooves, the peeling of the magnetic adsorption structure can be effectively avoided, the magnetic adsorption structure is magnetized, the above magnetic adsorption structure can realize the detachable connection of the light-emitting diode chip and the circuit substrate, the printing of solder and the reflow soldering process can be avoided, the manufacturing cost is greatly reduced, and since the light-emitting diode chip and the circuit substrate are detachably connected, the removal of a defective light-emitting diode chip is facilitated, and the repair of the light-emitting module can be smoothly realized.

Description

Technical Field

[0001] This invention relates to the field of semiconductor light-emitting technology, specifically to an LED light-emitting module, an LED packaging structure, and related manufacturing methods. Background Technology

[0002] In existing LED light-emitting modules, the typical manufacturing process is as follows: First, a conductive substrate is prepared, cleaned, dried, and degreased to obtain a clean conductive substrate. Then, solder paste is evenly applied to the pads of the conductive substrate using a stencil. Next, LED chips are mounted onto the corresponding pads using a pick-and-place machine, and a high-temperature reflow soldering process is performed to solidify the solder paste, completing the soldering. The above structure is then visually inspected to prevent problems such as cold solder joints, missing solder joints, reversed or misaligned LEDs, and short circuits. Finally, an encapsulation layer is applied to the conductive substrate, and the substrate is cut to form the LED light-emitting module. The existing manufacturing process for LED light-emitting modules is complex and costly. How to improve the structure of LED chips, thereby simplifying the subsequent manufacturing process and reducing manufacturing costs, is a key technological focus in the industry. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of the prior art and provide an LED light-emitting module, an LED packaging structure, and related manufacturing methods.

[0004] To achieve the above objectives, the present invention proposes a method for preparing an LED packaging structure, comprising the following steps: A semiconductor light-emitting wafer is provided, the semiconductor light-emitting wafer including a substrate and an epitaxial functional layer, the epitaxial functional layer including an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer.

[0005] The semiconductor light-emitting wafer is diced to form multiple light-emitting diode chips.

[0006] A first electrode and a second electrode are formed on the upper surface of each of the light-emitting diode chips, wherein the first electrode is electrically connected to the N-type semiconductor layer and the second electrode is electrically connected to the P-type semiconductor layer.

[0007] A first temporary carrier board is provided, on which a plurality of the light-emitting diode chips are disposed, such that the first electrode and the second electrode of each light-emitting diode chip face the first temporary carrier board.

[0008] A first encapsulation layer is formed on the first temporary carrier, and the first temporary carrier is removed.

[0009] Next, a plurality of annular grooves are formed in the first encapsulation layer, each annular groove surrounding a corresponding light-emitting diode chip, and the cross-section of each annular groove is an isosceles trapezoidal structure, wherein the length of the upper base of the isosceles trapezoidal structure is less than the length of its lower base.

[0010] Then, a plurality of second grooves are formed at the bottom of each of the annular grooves.

[0011] Next, a magnetic adsorption structure is formed in each of the annular grooves, and the magnetic adsorption structure is magnetized. A portion of the magnetic adsorption structure is embedded in a plurality of the second grooves.

[0012] Then, a first buffer conductive layer and a second buffer conductive layer are formed on each of the first electrode and each of the second electrodes, respectively.

[0013] Next, the first encapsulation layer is cut to form multiple separate LED encapsulation structures.

[0014] As a preferred technical solution, before placing the plurality of light-emitting diode chips on the first temporary carrier, a first temporary adhesive layer is provided on the first temporary carrier, and then the first electrode and the second electrode of each light-emitting diode chip are fixedly bonded by the first temporary adhesive layer.

[0015] As a preferred technical solution, the first encapsulation layer is formed by dispensing, spin coating, scraping, screen printing or injection molding.

[0016] As a preferred technical solution, a phosphor layer is formed on the substrate of each of the light-emitting diode chips before the first encapsulation layer is formed on the first temporary carrier.

[0017] As a preferred technical solution, the magnetic adsorption structure includes a resin matrix and magnetic powder, wherein the material of the magnetic powder is neodymium iron boron, ferrite, or AlNiCo.

[0018] As a preferred technical solution, the magnetic adsorption structure is formed by a slit coating process or a screen printing process.

[0019] As a preferred technical solution, the thickness of the first buffer conductive layer and the second buffer conductive layer is 1-10 micrometers. The first buffer conductive layer and the second buffer conductive layer are formed by slit coating, spin coating, spraying or screen printing. A first through hole and a second through hole are formed in the first buffer conductive layer and the second buffer conductive layer to expose the first electrode and the second electrode, respectively.

[0020] As a preferred technical solution, the present invention also proposes an LED packaging structure, which is prepared by the above-described LED packaging structure preparation method.

[0021] This invention also proposes a method for preparing a light-emitting module, comprising the following steps: A circuit board is provided, the circuit board including a plurality of first trenches, each first trench having a third electrode, a fourth electrode and an annular magnetic structure disposed at its bottom, the annular magnetic structure surrounding the third electrode and the fourth electrode, the surface of the third electrode having a first protrusion and the surface of the fourth electrode having a second protrusion.

[0022] A plurality of the above-mentioned LED packaging structures are provided, and each LED packaging structure is embedded in a corresponding first trench, such that the magnetic adsorption structure of each LED packaging structure is magnetically adsorbed with the corresponding annular magnetic structure, thereby making the first electrode and the second electrode of each LED packaging structure electrically connected to the corresponding third electrode and the fourth electrode respectively, the first protrusion is embedded in the first through hole, and the second protrusion is embedded in the second through hole.

[0023] As a preferred technical solution, the present invention also proposes a light-emitting module, which is prepared by the above-described method for preparing a light-emitting module.

[0024] The beneficial effects of this invention are as follows: In the LED packaging structure preparation method of the present invention, each light-emitting diode chip is pre-packaged, and multiple annular grooves are formed in the first packaging layer. Each annular groove surrounds a corresponding light-emitting diode chip. The cross-section of each annular groove is an isosceles trapezoidal structure, and the length of the upper base of the isosceles trapezoidal structure is less than the length of its lower base. A magnetic adsorption structure is formed in each annular groove. The magnetic adsorption structure is embedded in multiple second grooves, which can effectively prevent the magnetic adsorption structure from peeling off. The magnetic adsorption structure is magnetized. The above-mentioned magnetic adsorption structure can realize the detachable connection between the light-emitting diode chip and the circuit board, thereby avoiding solder printing and reflow soldering processes, greatly reducing manufacturing costs. Moreover, since the light-emitting diode chip and the circuit board are detachably connected, it is convenient to remove defective light-emitting diode chips and smoothly realize the rework of the light-emitting module. By setting the magnetic adsorption structure in the first packaging layer around the light-emitting diode chip, the magnetic adsorption structure can be effectively enlarged, thereby improving its magnetic adsorption capacity. And by setting the cross-section of the annular groove to be a regular trapezoidal structure, the peeling off of the magnetic adsorption structure can be effectively prevented.

[0025] Secondly, by setting an LED packaging structure and by setting a circuit board including multiple first trenches, each LED packaging structure is embedded in a corresponding first trench, so that the magnetic adsorption structure of each LED packaging structure is magnetically adsorbed with the corresponding annular magnetic structure, thereby making the first electrode and second electrode of each LED packaging structure electrically connected to the corresponding third electrode and fourth electrode respectively. The first protrusion is embedded in the first through hole, and the second protrusion is embedded in the second through hole. The above settings greatly improve the bonding stability between the LED packaging structure and the circuit board. Moreover, due to the existence of the first packaging layer, the light-emitting module does not need secondary packaging, which greatly reduces the manufacturing cost of the light-emitting module and facilitates the replacement of the LED packaging structure. Attached Figure Description

[0026] Figure 1 The diagram shown is a schematic representation of a semiconductor light-emitting wafer being cut to form multiple light-emitting diode chips in an embodiment of the present invention.

[0027] Figure 2 The diagram shows a structure in an embodiment of the present invention in which multiple light-emitting diode chips are disposed on a first temporary carrier board to form a first encapsulation layer.

[0028] Figure 3 The diagram shows a structure in which multiple annular grooves are formed in the first encapsulation layer according to an embodiment of the present invention.

[0029] Figure 4 The diagram shows a structure in an embodiment of the present invention that forms a magnetic adsorption structure, a first buffer conductive layer, and a second buffer conductive layer.

[0030] Figure 5 The diagram shows a structural schematic of a first encapsulation layer being cut to form multiple separate LED encapsulation structures in an embodiment of the present invention.

[0031] Figure 6 The diagram shown is a schematic representation of the circuit board structure in an embodiment of the present invention.

[0032] Figure 7 The diagram shows a schematic of each LED package structure being embedded into a corresponding first trench in an embodiment of the present invention. Detailed Implementation

[0033] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0034] like Figures 1 to 7 As shown, this embodiment provides a method for fabricating an LED packaging structure, including the following steps: like Figure 1 As shown, a semiconductor light-emitting wafer is provided, the semiconductor light-emitting wafer including a substrate 101 and an epitaxial functional layer, the epitaxial functional layer including an N-type semiconductor layer 102, a light-emitting layer 103 and a P-type semiconductor layer 104.

[0035] In a specific embodiment, the substrate 101 can be a sapphire substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, a gallium arsenide substrate, or a gallium phosphide substrate. Any suitable substrate can be selected according to the different emission colors of the light-emitting diode chip. Depending on the emission color, the epitaxial functional layer can be a gallium nitride system, an aluminum indium gallium phosphide system, or a gallium arsenide system. In a more specific embodiment, the N-type semiconductor layer 102 can be an N-type gallium nitride layer, the light-emitting layer 103 can be a quantum well light-emitting layer, more specifically an alternating InGaN quantum well layer and a GaN quantum barrier layer, and the P-type semiconductor layer 104 can be a P-type gallium nitride layer. The N-type semiconductor layer 102, the light-emitting layer 103, and the P-type semiconductor layer 104 are formed by MOCVD process.

[0036] like Figure 1 As shown, the semiconductor light-emitting wafer is diced to form a plurality of light-emitting diode chips 200. A first electrode 201 and a second electrode 202 are formed on the upper surface of each light-emitting diode chip 200, wherein the first electrode 201 is electrically connected to the N-type semiconductor layer 102, and the second electrode 202 is electrically connected to the P-type semiconductor layer 104.

[0037] In a specific embodiment, the semiconductor light-emitting wafer is cut using a laser cutting process or a mechanical cutting process to form a plurality of light-emitting diode chips 200, such that each light-emitting diode chip 200 includes a substrate 101, an N-type semiconductor layer 102, a light-emitting layer 103 and a P-type semiconductor layer 104 arranged sequentially from bottom to top.

[0038] In a specific embodiment, the process of forming a first electrode 201 and a second electrode 202 on the upper surface of each light-emitting diode chip 200 is as follows: Through-holes exposing the N-type semiconductor layer 102 are formed using laser drilling or photolithography; the sidewalls of the through-holes are passivated; then a metal conductive layer is formed using thermal evaporation, magnetron sputtering, electroplating, or chemical plating; and finally, the first electrode 201 and the second electrode 202 are formed through patterning. The material of the metal conductive layer is one or more of copper, aluminum, silver, titanium, gold, and palladium. In other embodiments, multiple first electrodes 201 and multiple second electrodes 202 can be pre-formed on the surface of the semiconductor light-emitting wafer, and then the semiconductor light-emitting wafer is diced to form multiple light-emitting diode chips 200, such that each light-emitting diode chip 200 includes one first electrode 201 and one second electrode 202. The first electrode 201 is electrically connected to the N-type semiconductor layer 102, and the second electrode 202 is electrically connected to the P-type semiconductor layer 104.

[0039] like Figure 2 As shown, a first temporary carrier board 300 is provided, on which a plurality of light-emitting diode chips 200 are disposed, such that the first electrode 201 and the second electrode 202 of each light-emitting diode chip 200 face the first temporary carrier board 300.

[0040] In a specific embodiment, before the plurality of light-emitting diode chips 200 are placed on the first temporary carrier plate 300, a first temporary adhesive layer 301 is provided on the first temporary carrier plate 300, and then the first electrode 201 and the second electrode 202 of each light-emitting diode chip 200 are fixedly bonded by the first temporary adhesive layer 301.

[0041] In a specific embodiment, the first temporary adhesive layer 301 becomes less viscous under light or heating conditions, thereby facilitating the subsequent peeling process.

[0042] like Figure 2 As shown, a first encapsulation layer 400 is formed on the first temporary carrier board 300, and the first temporary carrier board 300 is removed.

[0043] In a specific embodiment, the first encapsulation layer 400 is formed by dispensing, spin coating, blade coating, screen printing, or injection molding. The first encapsulation layer 400 can be made of epoxy resin or silicone material.

[0044] In a specific embodiment, before the first encapsulation layer 400 is formed on the first temporary carrier 300, a fluorescent layer 401 is formed on the substrate 101 of each of the light-emitting diode chips 200. More specifically, the fluorescent layer 401 includes phosphor, and the fluorescent layer 401 is formed by dispensing, spraying, spin coating, screen printing, film transfer or electrophoretic deposition.

[0045] like Figure 3 As shown, after removing the first temporary carrier board 300, a plurality of annular grooves 402 are then formed in the first encapsulation layer 400. Each annular groove 402 surrounds a corresponding light-emitting diode chip 200. The cross-section of each annular groove 402 is an isosceles trapezoidal structure, and the length of the upper base of the isosceles trapezoidal structure is less than the length of its lower base. Then, a plurality of second grooves 403 are formed at the bottom of each annular groove 402.

[0046] In a specific embodiment, the annular groove 402 is formed by wet etching, laser ablation, dry etching or mechanical cutting. Furthermore, multiple second grooves 403 are formed at the bottom of each annular groove 402 by laser ablation using a mask. The multiple second grooves 403 are spaced apart and arranged in parallel.

[0047] like Figure 4 As shown, a magnetic adsorption structure 500 is then formed in each of the annular grooves 402, and the magnetic adsorption structure 500 is magnetized. A portion of the magnetic adsorption structure 500 is embedded in a plurality of the second grooves.

[0048] In a specific embodiment, the magnetic adsorption structure 500 includes a resin matrix and magnetic powder. The magnetic powder is made of neodymium iron boron, ferrite, or AlNiCo. The magnetic adsorption structure 500 is formed by a slot coating process or a screen printing process.

[0049] In a specific embodiment, the resin matrix can be any suitable resin material such as epoxy resin or rubber, and the magnetic powder is neodymium iron boron nanoparticles, ferrite nanoparticles or AlNiCo nanoparticles. The magnetic adsorption structure 500 is then formed by a slot coating process or a screen printing process. During the formation of the magnetic adsorption structure 500, the magnetic adsorption structure 500 is magnetized to make the magnetic adsorption structure 500 magnetic.

[0050] like Figure 4 As shown, a first buffer conductive layer 501 and a second buffer conductive layer 502 are then formed on each of the first electrode 201 and each of the second electrode 202, respectively.

[0051] In a specific embodiment, the thickness of the first buffer conductive layer 501 and the second buffer conductive layer 502 is 1-10 micrometers. The first buffer conductive layer 501 and the second buffer conductive layer 502 are formed by slit coating, spin coating, spraying or screen printing. A first through hole 5011 and a second through hole 5021 are formed in the first buffer conductive layer 501 and the second buffer conductive layer 502 to expose the first electrode 201 and the second electrode 202, respectively.

[0052] In a specific embodiment, the first buffer conductive layer 501 and the second buffer conductive layer 502 are elastic and conductive. Specifically, the first buffer conductive layer 501 and the second buffer conductive layer 502 can be elastic conductive ink. The elastic conductive ink includes an elastic resin matrix and a conductive filler. The elastic resin matrix can be polyurethane, elastic acrylic or silicone resin, and the conductive filler can be any suitable material such as carbon black, graphite, silver powder, nickel powder, copper powder, silver-plated glass microspheres, etc.

[0053] In a specific embodiment, the first buffer conductive layer 501 and the second buffer conductive layer 502 are formed by a slit coating process, thereby forming a first buffer conductive layer 501 and a second buffer conductive layer 502 with a thickness of 1 micrometer, 2 micrometer, 4 micrometer, 5 micrometer, 7 micrometer, 8 micrometer or 19 micrometer. Then, a mask can be used to simultaneously form a first through hole 5011 and a second through hole 5021 that expose the first electrode 201 and the second electrode 202, respectively, during the formation of the first buffer conductive layer 501 and the second buffer conductive layer 502.

[0054] like Figure 5 As shown, the first encapsulation layer 400 is then cut to form multiple separate LED encapsulation structures 600.

[0055] In a specific embodiment, the first encapsulation layer 400 is cut using a mechanical cutting process or a laser cutting process to form multiple separate LED encapsulation structures 600.

[0056] like Figure 5 As shown, the present invention also proposes an LED packaging structure 600, which is prepared by the above-described LED packaging structure preparation method.

[0057] This invention also proposes a method for preparing a light-emitting module, comprising the following steps: like Figure 6As shown, a circuit board 700 is provided. The circuit board 700 includes a plurality of first trenches 800. Each first trench 800 has a third electrode 801, a fourth electrode 802 and an annular magnetic structure 803 disposed at its bottom. The annular magnetic structure 803 surrounds the third electrode 801 and the fourth electrode 802. The surface of the third electrode 801 has a first protrusion 8011 and the surface of the fourth electrode 802 has a second protrusion 8021.

[0058] In a specific embodiment, the circuit board 700 can be a ceramic substrate, a resin substrate, or a glass substrate. The third electrode 801 and the fourth electrode 802 can be copper electrodes or aluminum electrodes. The third electrode 801 and the first protrusion 8011 are integrally formed, and the fourth electrode 802 and the second protrusion 8021 are integrally formed. The annular magnetic structure 803 is formed by the same process as forming the magnetic adsorption structure 500.

[0059] like Figure 7 As shown, multiple LED packaging structures 600 are provided, each of which is embedded in a corresponding first trench 800, such that the magnetic adsorption structure 500 of each LED packaging structure 600 is magnetically adsorbed with the corresponding annular magnetic structure 803. This allows the first electrode 201 and the second electrode 202 of each LED packaging structure 600 to be electrically connected to the corresponding third electrode 801 and the fourth electrode 802, respectively. The first protrusion 8011 is embedded in the first through hole 5011, and the second protrusion 8021 is embedded in the second through hole 5021. This greatly improves the stability of the electrical connection and does not hinder the disassembly and installation of the LED packaging structure 600.

[0060] like Figure 7 As shown, the present invention also proposes a light-emitting module, which is prepared by the above-described method for preparing a light-emitting module.

[0061] In other preferred technical solutions, the present invention proposes a method for preparing an LED packaging structure, comprising the following steps: A semiconductor light-emitting wafer is provided, the semiconductor light-emitting wafer including a substrate and an epitaxial functional layer, the epitaxial functional layer including an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer.

[0062] The semiconductor light-emitting wafer is diced to form multiple light-emitting diode chips.

[0063] A first electrode and a second electrode are formed on the upper surface of each of the light-emitting diode chips, wherein the first electrode is electrically connected to the N-type semiconductor layer and the second electrode is electrically connected to the P-type semiconductor layer.

[0064] A first temporary carrier board is provided, on which a plurality of the light-emitting diode chips are disposed, such that the first electrode and the second electrode of each light-emitting diode chip face the first temporary carrier board.

[0065] A first encapsulation layer is formed on the first temporary carrier, and the first temporary carrier is removed.

[0066] Next, a plurality of annular grooves are formed in the first encapsulation layer, each annular groove surrounding a corresponding light-emitting diode chip, and the cross-section of each annular groove is an isosceles trapezoidal structure, wherein the length of the upper base of the isosceles trapezoidal structure is less than the length of its lower base.

[0067] Then, a plurality of second grooves are formed at the bottom of each of the annular grooves.

[0068] Next, a magnetic adsorption structure is formed in each of the annular grooves, and the magnetic adsorption structure is magnetized. A portion of the magnetic adsorption structure is embedded in a plurality of the second grooves.

[0069] Then, a first buffer conductive layer and a second buffer conductive layer are formed on each of the first electrode and each of the second electrodes, respectively.

[0070] Next, the first encapsulation layer is cut to form multiple separate LED encapsulation structures.

[0071] In a more preferred technical solution, before placing the plurality of light-emitting diode chips on the first temporary carrier, a first temporary adhesive layer is provided on the first temporary carrier, and then the first electrode and the second electrode of each light-emitting diode chip are fixedly bonded by the first temporary adhesive layer.

[0072] In a more advanced technical solution, the first encapsulation layer is formed by dispensing, spin coating, scraping, screen printing, or injection molding.

[0073] In a more preferred technical solution, a phosphor layer is formed on the substrate of each of the light-emitting diode chips before the first encapsulation layer is formed on the first temporary carrier.

[0074] In a more preferred technical solution, the magnetic adsorption structure includes a resin matrix and magnetic powder, wherein the magnetic powder is made of neodymium iron boron, ferrite, or AlNiCo.

[0075] In a more advanced technical solution, the magnetic adsorption structure is formed by a slit coating process or a screen printing process.

[0076] In a more preferred technical solution, the thickness of both the first and second buffer conductive layers is 1-10 micrometers. The first and second buffer conductive layers are formed by slit coating, spin coating, spraying, or screen printing. A first through-hole and a second through-hole are formed in the first and second buffer conductive layers to expose the first and second electrodes, respectively.

[0077] In a more advanced technical solution, the present invention also proposes an LED packaging structure, which is prepared by the above-described method for preparing LED packaging structures.

[0078] In other preferred technical solutions, the present invention also proposes a method for preparing a light-emitting module, comprising the following steps: A circuit board is provided, the circuit board including a plurality of first trenches, each first trench having a third electrode, a fourth electrode and an annular magnetic structure disposed at its bottom, the annular magnetic structure surrounding the third electrode and the fourth electrode, the surface of the third electrode having a first protrusion and the surface of the fourth electrode having a second protrusion.

[0079] A plurality of the above-mentioned LED packaging structures are provided, and each LED packaging structure is embedded in a corresponding first trench, such that the magnetic adsorption structure of each LED packaging structure is magnetically adsorbed with the corresponding annular magnetic structure, thereby making the first electrode and the second electrode of each LED packaging structure electrically connected to the corresponding third electrode and the fourth electrode respectively, the first protrusion is embedded in the first through hole, and the second protrusion is embedded in the second through hole.

[0080] In a more preferred technical solution, the present invention also proposes a light-emitting module, which is prepared by the above-described method for preparing a light-emitting module.

[0081] In the LED packaging structure preparation method of the present invention, each light-emitting diode chip is pre-packaged, and multiple annular grooves are formed in the first packaging layer. Each annular groove surrounds a corresponding light-emitting diode chip. The cross-section of each annular groove is an isosceles trapezoidal structure, and the length of the upper base of the isosceles trapezoidal structure is less than the length of its lower base. A magnetic adsorption structure is formed in each annular groove. The magnetic adsorption structure is embedded in multiple second grooves, which can effectively prevent the magnetic adsorption structure from peeling off. The magnetic adsorption structure is magnetized. The above-mentioned magnetic adsorption structure can realize the detachable connection between the light-emitting diode chip and the circuit board, thereby avoiding solder printing and reflow soldering processes, greatly reducing manufacturing costs. Moreover, since the light-emitting diode chip and the circuit board are detachably connected, it is convenient to remove defective light-emitting diode chips and smoothly realize the rework of the light-emitting module. By setting the magnetic adsorption structure in the first packaging layer around the light-emitting diode chip, the magnetic adsorption structure can be effectively enlarged, thereby improving its magnetic adsorption capacity. And by setting the cross-section of the annular groove to be a regular trapezoidal structure, the peeling off of the magnetic adsorption structure can be effectively prevented.

[0082] Secondly, by setting an LED packaging structure and by setting a circuit board including multiple first trenches, each LED packaging structure is embedded in a corresponding first trench, so that the magnetic adsorption structure of each LED packaging structure is magnetically adsorbed with the corresponding annular magnetic structure, thereby making the first electrode and second electrode of each LED packaging structure electrically connected to the corresponding third electrode and fourth electrode respectively. The first protrusion is embedded in the first through hole, and the second protrusion is embedded in the second through hole. The above settings greatly improve the bonding stability between the LED packaging structure and the circuit board. Moreover, due to the existence of the first packaging layer, the light-emitting module does not need secondary packaging, which greatly reduces the manufacturing cost of the light-emitting module and facilitates the replacement of the LED packaging structure.

[0083] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A method for preparing an LED packaging structure, characterized in that: Includes the following steps: A semiconductor light-emitting wafer is provided, the semiconductor light-emitting wafer including a substrate and an epitaxial functional layer, the epitaxial functional layer including an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer; The semiconductor light-emitting wafer is diced to form multiple light-emitting diode chips; A first electrode and a second electrode are formed on the upper surface of each of the light-emitting diode chips, wherein the first electrode is electrically connected to the N-type semiconductor layer and the second electrode is electrically connected to the P-type semiconductor layer; A first temporary carrier board is provided, and a plurality of light-emitting diode chips are disposed on the first temporary carrier board, such that the first electrode and the second electrode of each light-emitting diode chip face the first temporary carrier board; A first encapsulation layer is formed on the first temporary carrier, and the first temporary carrier is removed; Next, a plurality of annular grooves are formed in the first encapsulation layer, each annular groove surrounding a corresponding light-emitting diode chip, and the cross-section of each annular groove is an isosceles trapezoidal structure, wherein the length of the upper base of the isosceles trapezoidal structure is less than the length of its lower base; Then, a plurality of second grooves are formed at the bottom of each of the annular grooves; Next, a magnetic adsorption structure is formed in each of the annular grooves, and the magnetic adsorption structure is magnetized. A portion of the magnetic adsorption structure is embedded in a plurality of the second grooves. Then, a first buffer conductive layer and a second buffer conductive layer are formed on each of the first electrodes and each of the second electrodes, respectively; Next, the first encapsulation layer is cut to form multiple separate LED encapsulation structures.

2. The method for preparing the LED packaging structure according to claim 1, characterized in that: Before placing the plurality of light-emitting diode chips on the first temporary carrier, a first temporary adhesive layer is provided on the first temporary carrier, and the first electrode and the second electrode of each light-emitting diode chip are fixedly bonded by the first temporary adhesive layer.

3. The method for preparing the LED packaging structure according to claim 1, characterized in that: The first encapsulation layer is formed by dispensing, spin coating, scraping, screen printing or injection molding.

4. The method for preparing the LED packaging structure according to claim 1, characterized in that: Before forming the first encapsulation layer on the first temporary carrier, a phosphor layer is formed on the substrate of each of the light-emitting diode chips.

5. The method for preparing the LED packaging structure according to claim 1, characterized in that: The magnetic adsorption structure includes a resin matrix and magnetic powder, wherein the magnetic powder is made of neodymium iron boron, ferrite, or AlNiCo.

6. The method for preparing the LED packaging structure according to claim 5, characterized in that: The magnetic adsorption structure is formed by a slit coating process or a screen printing process.

7. The method for preparing the LED packaging structure according to claim 1, characterized in that: The thickness of both the first and second buffer conductive layers is 1-10 micrometers. The first and second buffer conductive layers are formed by slit coating, spin coating, spraying or screen printing. A first through hole and a second through hole are formed in the first and second buffer conductive layers to expose the first electrode and the second electrode, respectively.

8. An LED packaging structure, characterized in that: The LED packaging structure is prepared using the method described in any one of claims 1-7.

9. A method for preparing a light-emitting module, characterized in that: Includes the following steps: A circuit board is provided, the circuit board including a plurality of first trenches, each first trench having a third electrode, a fourth electrode and an annular magnetic structure disposed at its bottom, the annular magnetic structure surrounding the third electrode and the fourth electrode, the surface of the third electrode having a first protrusion and the surface of the fourth electrode having a second protrusion. A plurality of LED packaging structures as described in claim 8 are provided, wherein each LED packaging structure is embedded in a corresponding first trench such that the magnetic adsorption structure of each LED packaging structure is magnetically adsorbed with the corresponding annular magnetic structure, thereby making the first electrode and the second electrode of each LED packaging structure electrically connected to the corresponding third electrode and the fourth electrode respectively, the first protrusion being embedded in the first through hole, and the second protrusion being embedded in the second through hole.

10. A light-emitting module, characterized in that: The light-emitting module is prepared using the light-emitting module preparation method described in claim 9.

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