Display module and electronic device including the same
By optimizing the structural design of the display module, especially the materials and shape of the substrate and encapsulation layer, the light refraction efficiency was improved, solving the problem of low luminous efficiency in existing display modules and achieving a higher display effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SAMSUNG DISPLAY CO LTD
- Filing Date
- 2025-12-26
- Publication Date
- 2026-07-21
Smart Images

Figure CN122438486A_ABST
Abstract
Description
[0001] This application is based on and claims priority to Korean Patent Application No. 10-2025-0008534, filed with the Korean Intellectual Property Office on January 21, 2025, the disclosure of which is incorporated herein by reference in its entirety. Technical Field
[0002] This disclosure relates to display modules and electronic devices including display modules, and more specifically, to display modules having improved luminous efficiency and electronic devices including display modules. Background Technology
[0003] The display module can receive information about images and can display those images. It can be used as a display component in small products such as mobile phones or in large products such as televisions.
[0004] The display module includes a plurality of pixels that emit light in response to electrical signals to display images to the outside. Each pixel includes a light-emitting element, and, for example, in the case of an organic light-emitting display device, an organic light-emitting diode (OLED) may be included as the light-emitting element. Typically, the display module may include thin-film transistors and organic light-emitting diodes on a substrate.
[0005] In addition, electronic devices can provide users with the visual interface they need through display modules. Summary of the Invention
[0006] This disclosure relates to display modules with improved luminous efficiency and electronic devices including display modules. However, these objectives are provided by way of example only, and the scope of this disclosure is not limited thereto.
[0007] Additional aspects will be set forth in part in the description which follows and will be apparent in part from the description, or may be learned by practice of the embodiments of this disclosure presented.
[0008] According to aspects of this disclosure, the display module may include: a substrate; a first thin-film transistor disposed on the substrate; an insulating layer disposed on the first thin-film transistor and having a first through-hole, the insulating layer including a first first protrusion having a first height around the first through-hole; a first pixel electrode disposed on the insulating layer and electrically connected to the first thin-film transistor through the first through-hole, the first pixel electrode having a step corresponding to the first height relative to the upper surface of the insulating layer; a pixel defining layer disposed on the first pixel electrode and exposing at least a central portion of the first pixel electrode upwards; a first intermediate layer disposed on the pixel defining layer, generating light of a first wavelength and covering at least the central portion of the first pixel electrode; a first encapsulation layer disposed on the first intermediate layer, having a first refractive index and including a second first protrusion projecting upwards; and a second encapsulation layer disposed on the first encapsulation layer and having a second refractive index smaller than the first refractive index.
[0009] In the plan view, the first protrusion can be set inside the second protrusion.
[0010] In the plan view, the first through hole and the first protrusion can be spaced apart.
[0011] In a planar view, the first pixel electrode can be disposed within the second first protrusion.
[0012] In a plan view, at least the central portion of the first pixel electrode may be disposed within the upper surface of the second first protrusion.
[0013] In a planar view, at least the central portion of the first pixel electrode may not overlap with the outer surface of the second first protrusion.
[0014] The difference between the first refractive index and the second refractive index can be in the range of 0.1 to 0.7.
[0015] The thickness of the first protrusion can be greater than the thickness of the pixel-limiting layer.
[0016] The pixel-defining layer may include inorganic materials.
[0017] The first encapsulation layer may include inorganic materials, and the second encapsulation layer may include monomeric materials.
[0018] The display module may further include a third encapsulation layer disposed on the second encapsulation layer, and the third encapsulation layer may include inorganic materials.
[0019] The second first protrusion can be disposed in the optical path of light of the first wavelength traveling from the first intermediate layer in a direction away from the substrate.
[0020] The outer surface of the second protrusion can refract light of the first wavelength.
[0021] The insulating layer may further have a second through-hole, and may further include a first second protrusion having a second height around the second through-hole.
[0022] The display module may further include: a second thin-film transistor disposed on a substrate; a second pixel electrode disposed on the same layer as the first pixel electrode, electrically connected to the second thin-film transistor through a second via, having a step corresponding to a second height relative to the upper surface of the insulating layer and having at least a central portion exposed upward through the pixel defining layer; and a second intermediate layer disposed on the same layer as the first intermediate layer, generating light of a second wavelength and covering at least the central portion of the second pixel electrode.
[0023] The first wavelength can be shorter than the second wavelength, and the first height can be greater than the second height.
[0024] The first encapsulation layer may further include a second protrusion projecting upwards.
[0025] In the plan view, the first and second protrusions can be set inside the second protrusion.
[0026] In the plan view, the second through hole and the first and second protrusions can be spaced apart.
[0027] In a planar view, at least the central portion of the second pixel electrode may be disposed within the upper surface of the second protrusion.
[0028] In a planar view, at least the central portion of the second pixel electrode may not overlap with the outer surface of the second protrusion.
[0029] According to one or more embodiments, the electronic device includes: a memory configured to store data information; a processor configured to generate data signals and / or control signals based on the data information; and any of the above-described display modules configured to operate based on the data signals and / or control signals. Attached Figure Description
[0030] The above and other aspects, features, and advantages of specific embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
[0031] Figure 1 This is a schematic plan view illustrating a display module included in a display device according to aspects of this disclosure;
[0032] Figure 2 Based on the aspects of this disclosure Figure 1 An example of a schematic equivalent circuit diagram of a sub-pixel of a display device;
[0033] Figure 3 This illustrates aspects of the disclosure from Figure 1 An example of a schematic cross-sectional view of the section obtained from the display area;
[0034] Figure 4 This illustrates aspects of the disclosure from Figure 1 An example of a schematic cross-sectional view of the section obtained from the display area;
[0035] Figure 5 This illustrates aspects of the disclosure from Figure 1 An example of a schematic cross-sectional view of the section obtained from the display area;
[0036] Figure 6 This illustrates aspects of the disclosure from Figure 1 An example of a schematic cross-sectional view of the section obtained from the display area;
[0037] Figure 7 The graph (a) shows the luminous efficiency of the display module according to the comparative example and the graph (b) shows the luminous efficiency according to aspects of this disclosure. Figure 3 The graph (b) shows the luminous efficiency curve of the display module.
[0038] Figures 8 to 12 The manufacturing process according to aspects of this disclosure is shown sequentially. Figure 3 A diagram illustrating the manufacturing process of the display module;
[0039] Figure 13 This is a cross-sectional view showing an example of a display module according to a comparison example;
[0040] Figure 14 It is a block diagram of an electronic device according to aspects of this disclosure; and
[0041] Figure 15 This is a schematic diagram of an electronic device according to aspects of this disclosure. Detailed Implementation
[0042] Reference will now be made in detail to embodiments illustrated in the accompanying drawings, wherein the same reference numerals refer to the same elements throughout. At this point, the present embodiments may take different forms and should not be construed as limited to the description set forth herein. Accordingly, embodiments are described below with reference to the accompanying drawings only to explain aspects of the present description. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout this disclosure, the expression “at least one of a, b, and c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.
[0043] This disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art. The effects and features of this disclosure, as well as methods of implementing them, will become more apparent from the following detailed description of embodiments taken in conjunction with the accompanying drawings. However, this disclosure is not limited to the embodiments disclosed below but may be implemented in various forms.
[0044] In the following description, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings, and when described with reference to the drawings, the same or corresponding parts may be indicated by the same reference numerals and repeated descriptions of them will be omitted.
[0045] In the following embodiments, the terms "first," "second," etc., are used for the purpose of distinguishing one component from another, and are not used in a restrictive sense. Furthermore, in the following embodiments, singular expressions include plural expressions unless the context explicitly indicates otherwise.
[0046] In the following embodiments, when a component such as a layer, film, region, or plate is described as being “on” another component, this includes not only the case where the component is “directly on” the other component, but also the case where an intermediary component is located between the component and the other component.
[0047] Furthermore, for ease of explanation, the dimensions of components may be exaggerated or reduced in the accompanying drawings. For example, the dimensions and thicknesses of each component shown in the drawings are arbitrarily depicted for ease of explanation, and therefore this disclosure is not necessarily limited to what is shown.
[0048] In the following embodiments, terms such as “comprising” or “having” indicate the presence of a feature or component described in the specification, and do not exclude the possibility of adding one or more other features or components.
[0049] In the following embodiments, when a portion of a membrane, region, component, etc. is described as being "on" another portion, this includes not only the case where the portion is directly on the other portion, but also the case where another membrane, region, component, etc. is located between the portion and the other portion.
[0050] When embodiments can be implemented differently, a particular process sequence can be performed differently than the described sequence. For example, two processes described sequentially can be performed substantially simultaneously, or they can be performed in the reverse order of their description.
[0051] In this specification, "A and / or B" means that it is A, B, or both A and B. Additionally, "at least one of A and B" means that it is A, B, or both A and B.
[0052] In the following embodiments, when a membrane, region, component, etc., is described as "connected," this includes not only the case where the membrane, region, component, etc., are directly connected, but also the case where another membrane, region, component, etc., is indirectly connected between them. For example, in this specification, when a membrane, region, component, etc., is described as "electrically connected," this means either the case where the membrane, region, component, etc., are directly electrically connected, or the case where another membrane, region, component, etc., is indirectly electrically connected between them.
[0053] In the following embodiments, the x-axis, y-axis, and z-axis directions are not limited to directions corresponding to the three axes in a Cartesian coordinate system, but can be interpreted in a broader sense that includes the Cartesian coordinate system. For example, the x-axis, y-axis, and z-axis directions can be perpendicular to each other, or they can refer to different directions that are not perpendicular to each other.
[0054] Based on the above, the display module according to the embodiment will be described in detail below.
[0055] Figure 1 This is a schematic plan view showing a display module included in a display device according to aspects of this disclosure.
[0056] like Figure 1 As shown, the display module 11 includes a display area DA and a peripheral area PA located outside the display area DA. Figure 1 In this illustration, the display area DA is shown as having a rectangular shape, but this disclosure is not limited to a rectangular shape. The display area DA can have various shapes, such as a circular shape, an elliptical shape, other polygonal shapes, or specific geometric shapes.
[0057] The display area DA is the portion where an image can be displayed, and multiple sub-pixels PX can be arranged within the display area DA. Each sub-pixel PX may include a light-emitting element such as an organic light-emitting diode. Each sub-pixel PX may emit, for example, red, green, or blue light. The sub-pixel PX may include pixel circuitry containing thin-film transistors (TFTs), storage capacitors, etc. The pixel circuitry may be connected to a scan line SL for transmitting scan signals, a data line DL that intersects the scan line SL and transmits data signals, and a drive voltage line PL for supplying drive voltage. For example, the data line DL and the drive voltage line PL may extend in the y-axis direction (hereinafter, the first direction), and the scan line SL may extend in the x-axis direction (hereinafter, the second direction).
[0058] Subpixel PX can emit light with a brightness corresponding to the electrical signal received from data line DL. Display area DA can display a predetermined image using the light emitted from subpixel PX. For example, and without limitation, subpixel PX can be defined as an emitting area that emits one of red, green, and blue light.
[0059] The peripheral region PA is the area where sub-pixels PX are not disposed, and may be an area where no image is displayed. Power supply wiring for driving the sub-pixels PX can be disposed within the peripheral region PA. Furthermore, pads PD can be disposed within the peripheral region PA, and the peripheral region PA may include a pad region PD-P for which the pads PD are disposed.
[0060] An integrated circuit device (IC), such as a driver integrated circuit, can be mounted on a printed circuit board (PCB) including a driver circuit section, and terminals electrically connected to the IC can be arranged in the terminal area PCB-P of the PCB. The terminal area PCB-P corresponds to the pad area PD-P, and the aforementioned pad PD can be electrically connected to the terminals of the terminal area PCB-P in the peripheral area PA.
[0061] For reference, since the display module 11 includes a substrate 100, it can also be said that the substrate 100 includes a display area DA and a peripheral area PA. A detailed description of the substrate 100 is provided below.
[0062] Furthermore, multiple thin-film transistors (TFTs) can be arranged in the display area DA. Among the multiple TFTs, depending on the type of TFT (N-type or P-type) and / or operating conditions, the first terminal of the TFT can be either the source electrode or the drain electrode, and the second terminal of the TFT can be an electrode that is different from the first terminal, either the source electrode or the drain electrode. For example, when the first terminal is the source electrode, the second terminal can be the drain electrode.
[0063] In the following description, organic light-emitting display devices will be used as examples of display devices according to embodiments, but the display devices disclosed herein are not limited thereto. As embodiments, the display devices disclosed herein may be display devices such as inorganic light-emitting display devices or quantum dot light-emitting display devices. For example, the emitting layer included in the display device may comprise organic or inorganic materials. In some cases, the display device may comprise an emitting layer and quantum dots located in the optical path of light emitted from the emitting layer.
[0064] Figure 2 Based on the aspects of this disclosure Figure 1 An example of a schematic equivalent circuit diagram of a subpixel of a display device. Figure 2 The equivalent circuit diagram is the basic equivalent circuit diagram, and it is applied... Figure 2At least one of the various modifications of the equivalent circuit diagram can be applied to the display module 11 according to the embodiment.
[0065] For ease of explanation, Figure 2 The diagram shows a PMOS thin-film transistor, but the pixel circuit PC in this specification is not limited to a PMOS thin-film transistor and can be modified in different ways.
[0066] like Figure 2 As shown, each sub-pixel PX may include a pixel circuit PC connected to the scan line SL and the data line DL, and a light-emitting element OLED connected to the pixel circuit PC.
[0067] For example, the pixel circuit PC may include a driving thin-film transistor T1, a switching thin-film transistor T2, and a storage capacitor Cst. The switching thin-film transistor T2 is connected to the scan line SL and the data line DL, and can be configured to transmit the data signal Dm input through the data line DL to the driving thin-film transistor T1 according to the scan signal Sn input through the scan line SL.
[0068] For example, and without limitation, the driving thin-film transistor T1 can be a thin-film transistor for driving operation, and the switching thin-film transistor T2 can be a thin-film transistor for switching operation.
[0069] For example, and without limitation, the storage capacitor Cst is connected to the switching thin-film transistor T2 and the drive voltage line PL, and can store a voltage corresponding to the voltage difference between the voltage received from the switching thin-film transistor T2 and the first power supply voltage (or drive voltage) ELVDD supplied to the drive voltage line PL.
[0070] For example, and without limitation, the driving thin-film transistor T1 is connected to the driving voltage line PL and the storage capacitor Cst, and can be configured to control the driving current flowing from the driving voltage line PL to the light-emitting element OLED, corresponding to the value of the voltage stored in the storage capacitor Cst. The light-emitting element OLED can emit light with a predetermined brightness according to the driving current.
[0071] The light-emitting element (OLED) can receive a second power supply voltage (or common voltage) ELVSS. For example, the OLED can receive the second power supply voltage (or common voltage) ELVSS through its counter electrode (cathode), and the OLED can emit light with a predetermined brightness by means of a drive current based on the voltage difference between the first power supply voltage (or driving voltage) ELVDD and the second power supply voltage (or common voltage) ELVSS.
[0072] exist Figure 2The present invention describes a pixel circuit PC comprising two thin-film transistors T1 and T2 and a storage capacitor Cst, but this disclosure is not limited to such a configuration comprising two thin-film transistors and a capacitor. For example, the pixel circuit PC may include two or more capacitors and / or three or more thin-film transistors.
[0073] Figure 3 This illustrates aspects of the disclosure from Figure 1 An example of a schematic cross-sectional view of the section obtained from the display area. Figure 3 It is along Figure 1 The cross-sectional view taken by line A-A' in the diagram.
[0074] As described above, substrate 100 may include a display area DA and a peripheral area PA outside the display area DA. Substrate 100 may include various flexible or bendable materials.
[0075] For example, substrate 100 may include glass, metal, or polymer resin. For example, substrate 100 may include polymer resins such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate.
[0076] For example, substrate 100 may have a multilayer structure comprising two layers, each containing such a polymer resin, and a barrier layer between the two layers containing an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, etc.). Alternatively, substrate 100 may include inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, etc., and various layers and components for screen display (e.g., light-emitting elements using organic light-emitting materials, light-emitting elements using liquid crystals, etc.) may be disposed on substrate 100 containing inorganic materials.
[0077] A buffer layer 101 may be located on the substrate 100. The buffer layer 101 can serve as a barrier layer and / or inhibiting layer to prevent the diffusion of impurity ions, prevent the penetration of moisture or external air, and planarize the surface of the substrate 100. The buffer layer 101 may comprise silicon oxide, silicon nitride, or silicon oxynitride. Furthermore, the buffer layer 101 can control the rate of heat supply during the crystallization process for forming the semiconductor layer 110, so that the semiconductor layer 110 is crystallized uniformly.
[0078] Semiconductor layer 110 may be located on buffer layer 101. Semiconductor layer 110 may be made of polysilicon and may include an undoped channel region and source and drain regions formed by doping impurities on both sides of the channel region. The impurities vary depending on the type of thin-film transistor and may be N-type or P-type impurities.
[0079] Gate insulating film 102 may be located on semiconductor layer 110. Gate insulating film 102 may be a component for ensuring insulation between semiconductor layer 110 and gate layer 120. Gate insulating film 102 may comprise inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride, and may be located between semiconductor layer 110 and gate layer 120. Furthermore, gate insulating film 102 may be formed to correspond to the entire surface of substrate 100 and may have a structure in which through-holes are formed in predetermined portions of gate insulating film 102. Thus, insulating films comprising inorganic materials can be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes. Forming insulating films by CVD or ALD processes is also applicable to the embodiments described below and their modifications.
[0080] The gate layer 120 may be located on the gate insulating film 102. The gate layer 120 may be disposed at a position that is perpendicular to the semiconductor layer 110, and may include at least one metal selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), titanium (Ti), tungsten (W), and copper (Cu).
[0081] Interlayer insulating film 103 may be located on gate layer 120. Interlayer insulating film 103 may cover gate layer 120. Interlayer insulating film 103 may be made of inorganic material. For example, interlayer insulating film 103 may include metal oxide or metal nitride, and specifically, the inorganic material may include silicon oxide (SiO2). x Silicon nitride (SiN) y ), silicon oxynitride (SiO) x N y The materials used include aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO or ZnO2). In some embodiments, the interlayer insulating film 103 may be made of SiO2. x / SiN y or SiN y / SiO x It is made of a dual structure.
[0082] Despite Figure 3Although not shown, an additional gate layer and an additional interlayer insulating film may be present between gate layer 120 and conductive layer 130, and can be applied in various embodiments. In this case, the additional gate layer may comprise the same material as gate layer 120 and may have the same layer structure as gate layer 120. The additional interlayer insulating film may comprise the same material as interlayer insulating film 103 and may have the same layer structure as interlayer insulating film 103.
[0083] The conductive layer 130 may be located on the interlayer insulating film 103. The conductive layer 130 can serve as an electrode connected to the source and / or drain regions of the semiconductor layer 110 through vias in the interlayer insulating film 103 and the gate insulating film 102. The conductive layer 130 may include one or more metals selected from aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). For example, the conductive layer 130 may include a Ti layer, an Al layer, and / or a Cu layer.
[0084] In this specification, the semiconductor layer 110, the gate layer 120, and the conductive layer 130 can constitute thin-film transistors TFT1 and TFT2. For ease of explanation, thin-film transistors TFT1 and TFT2 can include a first thin-film transistor TFT1 corresponding to one sub-pixel PX and a second thin-film transistor TFT2 corresponding to another sub-pixel PX.
[0085] An organic insulating layer 104 may be located on the conductive layer 130. The organic insulating layer 104 may be an organic insulating layer covering the upper portion of the conductive layer 130 and having a generally flat upper surface, thus serving as a planarization layer. The organic insulating layer 104 may comprise organic materials such as acrylic acid, benzocyclobutene (BCB), hexamethyldisiloxane (HMDSO), etc. The organic insulating layer 104 may have various modifications (e.g., composed of a single layer or multiple layers).
[0086] Furthermore, despite Figure 3 Although not shown, additional conductive and insulating layers may be present between conductive layer 130 and pixel electrode 140, and can be applied in various embodiments. In this case, the additional conductive layer may comprise the same material as conductive layer 130 and may have the same layer structure as conductive layer 130. The additional insulating layer may comprise the same material as organic insulating layer 104 and may have the same layer structure as organic insulating layer 104.
[0087] For example, the organic insulating layer 104 may have a first via TH1 and a second via TH2. The first via TH1 and the second via TH2 can be formed by an etching process. For ease of explanation, Figure 3 Only two vias are shown, but the organic insulating layer 104 may include additional vias. The first via TH1 and the second via TH2 may pass through the organic insulating layer 104 above the conductive layer 130 and may allow connections to the conductive layer 130.
[0088] The organic insulating layer 104 may include a first first protrusion 104a1 having a first height d1 and a first second protrusion 104a2 having a second height d2. The first first protrusion 104a1 and the first second protrusion 104a2 may protrude upward relative to the upper surface of the organic insulating layer 104. For ease of explanation, Figure 3 Only two protrusions are shown, but the organic insulating layer 104 may include additional protrusions.
[0089] For example, and without limitation, the first height d1 of the first protrusion 104a1 and the second height d2 of the first second protrusion 104a2 can be in the range of 1 micrometer to 3 micrometers.
[0090] When the first height d1 of the first protrusion 104a1 is less than 1 micrometer, the step of the first pixel electrode 140a is too small, making the light refraction effect negligible. Conversely, when the first height d1 of the first protrusion 104a1 exceeds 3 micrometers, the step of the first pixel electrode 140a is too large, which may lead to the first pixel electrode 140a breaking or the first intermediate layer 150a being formed unevenly. The height requirement and its impact on light refraction also apply to the first and second protrusions 104a2 and the second pixel electrode 140b.
[0091] For example, the first height d1 of the first protrusion 104a1 can be in the range of 1.5 micrometers to 2 micrometers. In particular, within this range, the refraction effect of light of the first wavelength can be optimized, thereby maximizing the luminous efficiency of the display module 11. The height optimization for maximum luminous efficiency in the range of 1.5 micrometers to 2 micrometers can also be applied to the first second protrusion 104a2 and the second wavelength of light.
[0092] The first protrusion 104a1 and the first second protrusion 104a2 may comprise the same material as the organic insulating layer 104. The first protrusion 104a1 and the first second protrusion 104a2 may be formed simultaneously with the organic insulating layer 104 using a halftone process, or they may be formed on the organic insulating layer 104 using a separate process.
[0093] The first protrusion 104a1 may be disposed around the first through hole TH1. For example, the first protrusion 104a1 may be spaced apart from the first through hole TH1 by a first distance L. The first distance L may be 1 micrometer or more.
[0094] The first and second protrusions 104a2 can be disposed around the second through hole TH2. For example, the first and second protrusions 104a2 can be spaced apart from the second through hole TH2 by a second distance. The second distance can be more than 1 micrometer.
[0095] The first protrusion 104a1 and the first second protrusion 104a2 may be portions for forming steps of other layers or other components disposed on the first first protrusion 104a1 and the first second protrusion 104a2. Other layers or other components disposed on the first first protrusion 104a1 and the first second protrusion 104a2 may have steps corresponding to the first first protrusion 104a1 and the first second protrusion 104a2.
[0096] Pixel electrode 140 may be located on organic insulating layer 104. Pixel electrode 140 may be connected to conductive layer 130 through vias TH1 and TH2 formed in organic insulating layer 104. Pixel electrode 140 may include a transparent conductive layer formed of a transparent conductive oxide such as ITO, In2O3, or IZO, and a reflective layer formed of a metal such as Al or Ag. For example, pixel electrode 140 may have a three-layer structure of ITO / Ag / ITO.
[0097] The pixel electrode 140 may include a first pixel electrode 140a electrically connected to the first thin film transistor TFT1 through a first through-hole TH1 and a second pixel electrode 140b electrically connected to the second thin film transistor TFT2 through a second through-hole TH2.
[0098] The first pixel electrode 140a may have a step corresponding to the first protrusion 104a1. The first pixel electrode 140a may have a step corresponding to a first height d1. The first pixel electrode 140a may cover the upper surface of the organic insulating layer 104 surrounding the first protrusion 104a1, the outer surface of the first protrusion 104a1, and the upper surface of the first protrusion 104a1. The first pixel electrode 140a may be formed along the shape of the first protrusion 104a1. Since the first pixel electrode 140a is formed to cover the first protrusion 104a1, the first pixel electrode 140a may have a step corresponding to the first height d1 of the first protrusion 104a1. The thickness of the first protrusion 104a1 may be greater than the thickness of the pixel defining layer 105, and the pixel defining layer 105 may include an inorganic material such that the pixel defining layer 105 is a thin pixel defining layer.
[0099] The second pixel electrode 140b may have a step corresponding to the first second protrusion 104a2. The second pixel electrode 140b may have a step corresponding to a second height d2. The second pixel electrode 140b may cover the upper surface of the organic insulating layer 104 around the first second protrusion 104a2, the outer surface of the first second protrusion 104a2, and the upper surface of the first second protrusion 104a2. The second pixel electrode 140b may be formed along the shape of the first second protrusion 104a2. Since the second pixel electrode 140b is formed to cover the first second protrusion 104a2, the second pixel electrode 140b may have a step corresponding to the second height d2 of the first second protrusion 104a2. The thickness of the first second protrusion 104a2 may be greater than the thickness of the pixel defining layer 105, and the pixel defining layer 105 may include inorganic materials to achieve a thin pixel defining layer.
[0100] A pixel defining layer 105 is located on the organic insulating layer 104 and can be arranged to cover the edge of the pixel electrode 140. That is, the pixel defining layer 105 can cover the edge of the pixel electrode 140. The pixel defining layer 105 has an opening corresponding to the sub-pixel PX, and this opening can be formed such that at least the central portion of the pixel electrode 140 is exposed upwards. Furthermore, spacers (not shown) can be disposed on the pixel defining layer 105.
[0101] The pixel defining layer 105 may include organic materials such as polyimide or HMDSO. Alternatively, for example, the pixel defining layer 105 may include inorganic materials. For example, the pixel defining layer 105 may include at least one inorganic material selected from silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, and silicon oxynitride.
[0102] When the pixel defining layer 105 comprises an inorganic material, the thickness of the pixel defining layer 105 can be less than the thickness of the pixel defining layer 105 made of an organic material. Therefore, when the pixel defining layer 105 is formed using an inorganic material, a relatively thin pixel defining layer 105 can be formed.
[0103] The pixel defining layer 105 may cover the edge of the pixel electrode 140. The pixel defining layer 105 may expose at least the central portion of the pixel electrode 140 upwards. The exposed at least the central portion of the pixel electrode 140 may be defined as an emission region.
[0104] For example, the pixel defining layer 105 may cover the edge of the first pixel electrode 140a. The pixel defining layer 105 may expose at least the central portion EC1 of the first pixel electrode 140a upwards.
[0105] For example, the pixel defining layer 105 may cover the edge of the second pixel electrode 140b. The pixel defining layer 105 may expose at least the central portion EC2 of the second pixel electrode 140b upwards.
[0106] Intermediate layer 150 may be located in an opening of pixel defining layer 105 or on pixel defining layer 105. Counter electrode 160 may be located on intermediate layer 150. Intermediate layer 150 comprises a low molecular weight material or a high molecular weight material. When intermediate layer 150 comprises a low molecular weight material, intermediate layer 150 may include a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. When intermediate layer 150 comprises a high molecular weight material, intermediate layer 150 may typically have a structure including a hole transport layer and an emitter layer.
[0107] For example, intermediate layer 150 may include a first intermediate layer 150a that generates light of a first wavelength and a second intermediate layer 150b that generates light of a second wavelength. Although in Figure 3 The first intermediate layer 150a is not shown, but the intermediate layer 150 may further include a third intermediate layer (not shown) that generates light of a third wavelength. For example, the first wavelength may refer to a wavelength in the visible blue light band, and the second wavelength may refer to a wavelength in the visible red light band or a wavelength in the visible green light band. For example, the first wavelength may be less than or shorter than the second wavelength. The first intermediate layer 150a and the second intermediate layer 150b may be disposed in the same layer.
[0108] For example, and without limitation, a first intermediate layer 150a disposed on the pixel defining layer 105 generates light of a first wavelength and may cover at least the central portion EC1 of the first pixel electrode 140a. A second intermediate layer 150b disposed on the pixel defining layer 105 generates light of a second wavelength and may cover at least the central portion EC2 of the second pixel electrode 140b.
[0109] For example, the first height d1 of the first protrusion 104a1 can correspond to the first wavelength, and the second height d2 of the first second protrusion 104a2 can correspond to the second wavelength. For example, and without limitation, when the first wavelength is less than the second wavelength, the first height d1 can be greater than the second height d2. Because the degree of refraction changes with the wavelength, the height of the protrusion can be adjusted to optimize light refraction.
[0110] The counter electrode 160 may comprise a transparent conductive layer formed of a transparent conductive oxide such as ITO, In₂O₃, or IZO. The pixel electrode 140 may be used as the anode, and the counter electrode 160 may be used as the cathode. Of course, the polarity of the electrodes may also be reversed.
[0111] The structure of the intermediate layer 150 is not limited to the description above and can be other structures. For example, at least one of the layers constituting the intermediate layer 150 can be integrally formed with the counter electrode 160. As another embodiment, the intermediate layer 150 may include patterned layers corresponding to each of the plurality of pixel electrodes 140.
[0112] For example, counter electrode 160 is disposed on display area DA, and may be disposed throughout display area DA. However, as described below, in this specification, counter electrode 160 may be distinguished to correspond to each of the emission areas.
[0113] The counter electrode 160 can be electrically connected to a common power line (not shown) disposed on the peripheral region PA. In one embodiment, the counter electrode 160 can extend to a barrier wall (not shown). The thin-film encapsulation layer TFE covers the entire display area DA and can be arranged to extend toward the peripheral region PA to cover at least a portion of the peripheral region PA.
[0114] The thin-film encapsulation layer TFE can extend outside the common power line (not shown). The thin-film encapsulation layer TFE may include a first encapsulation layer 310, a second encapsulation layer 320 and a third encapsulation layer 330, and the second encapsulation layer 320 may be located between the first encapsulation layer 310 and the third encapsulation layer 330.
[0115] For example, the first encapsulation layer 310 and the third encapsulation layer 330 may be inorganic encapsulation layers containing inorganic materials. The first encapsulation layer 310 and the third encapsulation layer 330 may include one or more inorganic materials such as aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, or silicon oxynitride.
[0116] The first encapsulation layer 310 and the third encapsulation layer 330 may be a single layer or multiple layers comprising the aforementioned materials. The first encapsulation layer 310 and the third encapsulation layer 330 may comprise the same material or different materials. The thickness of the first encapsulation layer 310 and the thickness of the third encapsulation layer 330 may be different from each other. The thickness of the first encapsulation layer 310 may be greater than the thickness of the third encapsulation layer 330. Alternatively, the thickness of the third encapsulation layer 330 may be greater than the thickness of the first encapsulation layer 310, or the thicknesses of the first encapsulation layer 310 and the third encapsulation layer 330 may be equal to each other.
[0117] For example, the second encapsulation layer 320 may be an organic encapsulation layer. The second encapsulation layer 320 may include monomeric or polymeric materials. Polymeric materials may include at least one of acrylic resin, epoxy resin, polyimide, and polyethylene. In one embodiment, the second encapsulation layer 320 may include acrylate.
[0118] For example, the first encapsulation layer 310 is disposed on the first intermediate layer 150a and may have a first refractive index. Alternatively, the first encapsulation layer 310 may comprise a material having a first refractive index. For example, when the first encapsulation layer 310 comprises SiO x At that time, the first encapsulation layer 310 may have a refractive index of about 1.6 to about 1.7.
[0119] The first encapsulation layer 310 can be used as a convex lens on the intermediate layer 150 covering at least the central portion of the pixel electrode 140. For its purpose as a convex lens on the intermediate layer 150, the first encapsulation layer 310 may include protrusions projecting upwards relative to the upper surface of the first encapsulation layer 310. The protrusions of the first encapsulation layer 310 may include the same material as the first encapsulation layer 310.
[0120] For example, the second first protrusion 310a may protrude upward beyond the upper surface of the first encapsulation layer 310. The second first protrusion 310a may have an upper surface and an outer surface. The upper surface and outer surface of the second first protrusion 310a may be positioned (relative to the substrate 100) higher than the surrounding upper surface of the first encapsulation layer 310. In a plan view, the first pixel electrode 140a may be disposed within the second first protrusion 310a. In a plan view, at least the central portion EC1 of the first pixel electrode 140a may be disposed within the upper surface of the second first protrusion 310a. In a plan view, at least the central portion EC1 of the first pixel electrode 140a may not overlap with the outer surface of the second first protrusion 310a.
[0121] The non-overlapping arrangement between the central portion EC1 of the first pixel electrode 140a and the outer surface of the second first protrusion 310a can be considered as the optical path of light of the first wavelength generated from the first intermediate layer 150a. For example, the second first protrusion 310a can be disposed in the optical path of the first wavelength of light traveling from the first intermediate layer 150a in a direction away from the substrate 100. The first wavelength of light traveling in a direction perpendicular to the substrate 100 must pass through the upper surface of the second first protrusion 310a and can be guided so as not to be refracted as it passes through the upper surface of the second first protrusion 310a.
[0122] Furthermore, light of the first wavelength traveling in a direction not perpendicular to the substrate 100 can be guided and refracted by passing through the outer surface of the second first protrusion 310a. For example, the outer surface of the second first protrusion 310a can refract light of the first wavelength in a direction approximately perpendicular to the substrate 100 (e.g., in the direction toward a viewer viewing the screen). Light of the first wavelength traveling in a direction not perpendicular to the substrate 100 can be refracted as it passes through the outer surface of the second first protrusion 310a to travel in a direction approximately perpendicular to the substrate 100. As a result, luminous efficiency can be improved.
[0123] The slope θ1 of the outer surface of the second first protrusion 310a can be different from the slope θ3 of the outer surface of the first first protrusion 104a1. For example, the slope θ1 of the outer surface of the second first protrusion 310a can be steeper than the slope θ3 of the outer surface of the first first protrusion 104a1. As a result, the effect of the second first protrusion 310a as a convex lens can be enhanced.
[0124] For example, the second protrusion 310b may protrude upward beyond the upper surface of the first encapsulation layer 310. The second protrusion 310b may have an upper surface and an outer surface. The upper surface and outer surface of the second protrusion 310b may be positioned (relative to the substrate 100) higher than the surrounding upper surface of the first encapsulation layer 310. In a plan view, the second pixel electrode 140b may be disposed within the second protrusion 310b. In a plan view, at least the central portion EC2 of the second pixel electrode 140b may be disposed within the upper surface of the second protrusion 310b. In a plan view, at least the central portion EC2 of the second pixel electrode 140b may not overlap with the outer surface of the second protrusion 310b.
[0125] The non-overlapping arrangement between the central portion EC2 of the second pixel electrode 140b and the outer surface of the second protrusion 310b allows for consideration of the optical path of the second wavelength light generated from the second intermediate layer 150b. For example, the second protrusion 310b can be positioned in the optical path of the second wavelength light traveling from the second intermediate layer 150b in a direction away from the substrate 100. The second wavelength light traveling in a direction perpendicular to the substrate 100 must pass through the upper surface of the second protrusion 310b and can be guided to avoid refraction as it passes through the upper surface of the second protrusion 310b.
[0126] Furthermore, light of a second wavelength traveling in a direction not perpendicular to the substrate 100 can be guided and refracted by passing through the outer surface of the second protrusion 310b. For example, the outer surface of the second protrusion 310b can refract light of a second wavelength in a direction approximately perpendicular to the substrate 100 (e.g., in the direction toward a viewer viewing the screen). Light of a second wavelength traveling in a direction not perpendicular to the substrate 100 can be refracted as it passes through the outer surface of the second protrusion 310b to travel in a direction approximately perpendicular to the substrate 100. As a result, luminous efficiency can be improved.
[0127] The slope θ2 of the outer surface of the second protrusion 310b can be different from the slope θ4 of the outer surface of the first protrusion 104a2. For example, the slope θ2 of the outer surface of the second protrusion 310b can be steeper than the slope θ4 of the outer surface of the first protrusion 104a2. As a result, the effect of the second protrusion 310b as a convex lens can be enhanced.
[0128] To achieve the same refractive phenomenon as that of a convex lens through the first encapsulation layer 310 and the second encapsulation layer 320, the difference between the first refractive index of the first encapsulation layer 310 and the second refractive index of the second encapsulation layer 320 can be in the range of 0.1 to 0.7 (assuming the first refractive index is greater than the second refractive index). For example, and without limitation, when the second encapsulation layer 320 comprises a monomeric material, the second refractive index is approximately 1.5. When the difference between the first refractive index of the first encapsulation layer 310 and the second refractive index of the second encapsulation layer 320 is in the range of 0.1 to 0.7, the light efficiency is improved by more than 10% compared to when the difference between the first and second refractive indices is not in this range.
[0129] For example, the height of the second first protrusion 310a can correspond to the first wavelength, and the height of the second second protrusion 310b can correspond to the second wavelength. For example, the first wavelength is shorter than the second wavelength, and the height of the second first protrusion 310a can be greater than the height of the second second protrusion 310b. Because the degree of refraction changes with the wavelength, the height of the protrusions can be adjusted to optimize light refraction.
[0130] For example, the slope θ1 of the outer surface of the second first protrusion 310a can correspond to the first wavelength, and the slope θ2 of the outer surface of the second second protrusion 310b can correspond to the second wavelength. Here, the slope θ1 of the outer surface of the second first protrusion 310a can refer to the interior angle between the outer surface of the second first protrusion 310a and the reference plane, and the reference plane can refer to the upper surface of the substrate 100 or the upper surface of the second first protrusion 310a. The slope θ2 of the outer surface of the second second protrusion 310b can refer to the interior angle between the outer surface of the second second protrusion 310b and the reference plane, and the reference plane can refer to the upper surface of the substrate 100 or the upper surface of the second second protrusion 310b.
[0131] For example, the first wavelength is shorter than the second wavelength, and the slope θ1 of the outer surface of the second protrusion 310a is steeper than the slope θ2 of the outer surface of the second protrusion 310b. Because the degree of refraction changes with the wavelength, the slope of the outer surface of the protrusion can be adjusted to optimize light refraction.
[0132] A barrier wall (not shown) may be located on the peripheral region PA of the substrate 100. In one embodiment, the barrier wall (not shown) may have a three-layer structure comprising a portion of an organic insulating layer 104, a portion of a pixel defining layer 105, and a portion of a spacer (not shown), but is not necessarily limited to a three-layer structure.
[0133] A barrier wall (not shown) is arranged to surround the display area DA and prevents material from overflowing from the second encapsulation layer 320 of the thin-film encapsulation layer TFE to the outside of the substrate 100. Therefore, the second encapsulation layer 320 can contact the inner surface of the barrier wall (not shown) facing the display area DA. Here, the statement that the second encapsulation layer 320 contacts the inner surface of the barrier wall (not shown) can be understood as the first encapsulation layer 310 being between the second encapsulation layer 320 and the barrier wall (not shown), and the second encapsulation layer 320 contacting the first encapsulation layer 310.
[0134] The first encapsulation layer 310 and the third encapsulation layer 330 are disposed on the barrier wall (not shown) and may extend to the edge side of the substrate 100. However, depending on the circumstances, the barrier wall (not shown) may be provided in multiple forms to include multiple barrier walls.
[0135] The functional layer 400 may be disposed on the third encapsulation layer 330. For convenience, the functional layer 400 is shown as a single layer and may correspond to one or more layers such as a layer having a lower refractive index than the third encapsulation layer 330, a touch electrode layer, a color filter layer, a window member, etc. When the functional layer 400 is a low-refractive-index layer, the low-refractive-index layer can prevent refraction phenomena caused by the third encapsulation layer 330.
[0136] like Figure 3 As shown, the thickness of the first encapsulation layer 310 can vary by region. For example, the thickness of the region of the first encapsulation layer 310 that overlaps with the emission region (e.g., the opening formed in the pixel defining layer 105 corresponding to the sub-pixel PX) can be thicker than the thickness of other regions of the first encapsulation layer 310. This difference in thickness by region of the first encapsulation layer 310 helps to refract light toward the front of the screen (e.g., in the z-axis direction). These characteristics also apply to the following description. Figure 4 , Figure 5 , Figure 6 and Figure 12 .
[0137] Figure 4 This illustrates aspects of the disclosure from Figure 1 This is an example of a schematic cross-sectional view obtained from the display area. For reference, Figure 4 Descriptions that are essentially the same as those provided above can be omitted.
[0138] like Figure 4As shown, the first protrusion 104a1 and the first second protrusion 104a2 can be disposed on the organic insulating layer 104. Figure 3 Unlike the illustrations, the first protrusion 104a1 and the first second protrusion 104a2 may include materials different from those of the organic insulating layer 104 as components separate from the organic insulating layer 104.
[0139] For example, the first protrusion 104a1 and the second protrusion 104a2 may comprise conductive materials (e.g., metallic materials such as aluminum (Al), copper (Cu), titanium (Ti), etc.) and may be in direct contact with the first pixel electrode 140a and the second pixel electrode 140b, respectively. Therefore, this can reduce the resistance of each of the first pixel electrode 140a and the second pixel electrode 140b.
[0140] As described above, since the first height d1 of the first protrusion 104a1 corresponds to the first wavelength, and the second height d2 of the first second protrusion 104a2 corresponds to the second wavelength, the first height d1 can be greater than the second height d2.
[0141] Figure 5 This illustrates aspects of the disclosure from Figure 1 This is an example of a schematic cross-sectional view obtained from the display area. For reference, Figure 5 Descriptions that are essentially the same as those provided above can be omitted.
[0142] like Figure 5 As shown, a first protrusion 104a1 can be disposed inside a first pixel electrode 140a, and a first second protrusion 104a2 can be disposed inside a second pixel electrode 140b. The first pixel electrode 140a can cover the entire bottom surface, top surface, and outer surface of the first first protrusion 104a1, and the second pixel electrode 140b can cover the entire bottom surface, top surface, and outer surface of the first second protrusion 104a2. Therefore, the volume of the first pixel electrode 140a can be increased by the volume of the first first protrusion 104a1, and according to the increased volume of the first pixel electrode 140a, the second first protrusion 310a of the first encapsulation layer 310 can protrude upwards. Similarly, the volume of the second pixel electrode 140b can be increased by the volume of the first second protrusion 104a2, and according to the increased volume of the second second pixel electrode 140b, the second second protrusion 310b of the first encapsulation layer 310 can protrude upwards.
[0143] As described above, since the first height d1 of the first protrusion 104a1 corresponds to the first wavelength, and the second height d2 of the first second protrusion 104a2 corresponds to the second wavelength, the first height d1 can be greater than the second height d2. Figure 5 The first protrusion 104a1 and the first second protrusion 104a2 may include organic materials and may be formed by a deposition process.
[0144] Figure 6 This illustrates aspects of the disclosure from Figure 1 This is an example of a schematic cross-sectional view obtained from the display area. For reference, Figure 6 Descriptions that are essentially the same as those provided above can be omitted.
[0145] exist Figure 6 In the example, the first refractive index of the first encapsulation layer 310 can be less than the second refractive index of the second encapsulation layer 320. Because the first refractive index is less than the second refractive index, therefore Figures 3 to 5 The protrusion can be changed to Figure 6 The groove in the middle.
[0146] like Figure 6 As shown, the organic insulating layer 104 may have a first groove OP1-1. The first groove OP1-1 is formed in the upper surface of the organic insulating layer 104 and may have a shape that is recessed to a certain depth from the upper surface of the organic insulating layer 104. Figure 6 The first groove OP1-1 can be the opposite concept to the first protrusion 104a1 mentioned above.
[0147] The first pixel electrode 140a can be formed along the inner surface and bottom surface of the first groove OP1-1. As a result, the shape of the first pixel electrode 140a in the cross-sectional view can correspond to the shape of the first groove OP1-1 in the cross-sectional view.
[0148] The first intermediate layer 150a can also be formed along the inner surface and bottom surface of the first groove OP1-1. As a result, the shape of the first intermediate layer 150a in the cross-sectional view can correspond to the shape of the first pixel electrode 140a in the cross-sectional view.
[0149] The counter electrode 160 can also be formed along the inner surface and bottom surface of the first groove OP1-1. As a result, the shape of the counter electrode 160 in cross-sectional view can correspond to the shape of the first intermediate layer 150a in cross-sectional view.
[0150] The first encapsulation layer 310 may also be formed along the inner surface and bottom surface of the first first groove OP1-1. As a result, the shape of the first encapsulation layer 310 in cross-sectional view may correspond to the shape of the counter electrode 160 in cross-sectional view. The first encapsulation layer 310 may have a second first groove OP2-1 with a smaller dimension than the first first groove OP1-1 (e.g., a depth lower than the depth of the first first groove OP1-1 or a bottom surface area smaller than the area of the bottom surface of the first first groove OP1-1). In plan view, the second first groove OP2-1 may be disposed within the first first groove OP1-1. The second first groove OP2-1 is formed in the upper surface of the first encapsulation layer 310 and may refer to a groove recessed to a certain depth from the upper surface of the first encapsulation layer 310.
[0151] However, in this specification, when a groove is described as having a (relative) small size, this may mean that the area of the bottom surface of the groove and the area of the inner surface of the groove are (relatively) smaller than the area of the bottom surface of the comparison target and the area of the inner surface, respectively.
[0152] like Figure 6 As shown, the organic insulating layer 104 may have a first and a second groove OP1-2. The first and a second groove OP1-2 are formed in the upper surface of the organic insulating layer 104 and may have a shape that is recessed to a certain depth from the upper surface of the organic insulating layer 104. Figure 6 The first and second grooves OP1-2 can be the opposite concept to the first and second protrusions 104a2 mentioned above.
[0153] The second pixel electrode 140b can be formed along the inner surface and bottom surface of the first and second grooves OP1-2. As a result, the shape of the second pixel electrode 140b in the cross-sectional view can correspond to the shape of the first and second grooves OP1-2 in the cross-sectional view.
[0154] The second intermediate layer 150b can also be formed along the inner surface and bottom surface of the first and second grooves OP1-2. As a result, the shape of the second intermediate layer 150b in the cross-sectional view can correspond to the shape of the second pixel electrode 140b in the cross-sectional view.
[0155] The counter electrode 160 can also be formed along the inner surface and bottom surface of the first and second grooves OP1-2. As a result, the shape of the counter electrode 160 in cross-sectional view can correspond to the shape of the second intermediate layer 150b in cross-sectional view.
[0156] The first encapsulation layer 310 can also be formed along the inner surface and bottom surface of the first and second grooves OP1-2. As a result, the shape of the first encapsulation layer 310 in cross-sectional view can correspond to the shape of the counter electrode 160 in cross-sectional view. The first encapsulation layer 310 can have a second groove OP2-2 with a smaller dimension than the first and second grooves OP1-2 (e.g., a depth lower than the depth of the first and second grooves OP1-2 or a bottom surface area smaller than the area of the bottom surface of the first and second grooves OP1-2). In plan view, the second groove OP2-2 can be disposed within the first and second grooves OP1-2. The second groove OP2-2 is formed in the upper surface of the first encapsulation layer 310 and can refer to a groove recessed to a certain depth from the upper surface of the first encapsulation layer 310.
[0157] The obtuse angle between the inner surface of the second first groove OP2-1 and the upper surface of the substrate 100 (or the bottom surface of the second first groove OP2-1) can be larger than the obtuse angle between the inner surface of the first first groove OP1-1 and the upper surface of the substrate 100 (or the bottom surface of the first first groove OP1-1). This larger obtuse angle between the inner surface of the second first groove OP2-1 and the upper surface of the substrate 100 may be because the second first groove OP2-1 is formed after the first first groove OP1-1 is formed. This structure, with its larger obtuse angle between the inner surface of the second first groove OP2-1 and the upper surface of the substrate 100 (or the bottom surface of the second first groove OP2-1), facilitates the refraction of light towards the front of the screen (e.g., in the z-axis direction).
[0158] The obtuse angle between the inner surface of the second groove OP2-2 and the upper surface of the substrate 100 (or the bottom surface of the second groove OP2-2) can be larger than the obtuse angle between the inner surface of the first groove OP1-2 and the upper surface of the substrate 100 (or the bottom surface of the first groove OP1-2). This larger obtuse angle between the inner surface of the second groove OP2-2 and the upper surface of the substrate 100 may be because the second groove OP2-2 is formed after the first groove OP1-2 is formed. This structure, with its larger obtuse angle between the inner surface of the second groove OP2-2 and the upper surface of the substrate 100 (or the bottom surface of the second groove OP2-2), facilitates the refraction of light towards the front of the screen (e.g., in the z-axis direction).
[0159] As the first encapsulation layer 310 has a second first groove OP2-1 and a second second groove OP2-2 on the first intermediate layer 150a and the second intermediate layer 150b, the first encapsulation layer 310 can function as a concave lens. Therefore, light of a first wavelength generated from the first intermediate layer 150a and converging towards the center can be refracted in a direction perpendicular to the substrate 100 due to the difference in refractive index between the first encapsulation layer 310 and the second encapsulation layer 320. Similarly, light of a second wavelength generated from the second intermediate layer 150b and converging towards the center can be refracted in a direction perpendicular to the substrate 100 due to the difference in refractive index between the first encapsulation layer 310 and the second encapsulation layer 320. As a result, the luminous efficiency of the display module 11 can be improved.
[0160] Figure 7 The graph (a) shows the luminous efficiency of the display module according to the comparative example and the graph (b) shows the luminous efficiency according to aspects of this disclosure. Figure 3 The graph (b) shows the luminous efficiency curve of the display module.
[0161] For reference, graphs (a) and (b) show the brightness distribution of green light obtained through simulation. The vertical axis of graphs (a) and (b) represents the viewing angle from 0 degrees to 90 degrees, and the horizontal axis of graphs (a) and (b) represents the number of measured green light rays, which can be interpreted as the brightness of the light. The more light rays, the brighter the light.
[0162] The curve (a) is based on not using Figures 3 to 5 protrusion or Figure 6 The curve obtained based on the conditions of the display module of the groove, and curve (b) is based on Figure 3 The graph was obtained based on the conditions of the display module. All other conditions in the simulation were the same except for the inclusion of the protrusion.
[0163] When using virtual reality (VR) devices to display a screen close to the user's eyes, luminous efficiency from a viewing angle of 0 to 30 degrees is important. Regarding the brightness of light between a viewing angle of 0 degrees and 30 degrees in the two graphs (a) and (b), it is confirmed that the average brightness (number of rays) of graph (b) is greater than that of graph (a).
[0164] Figures 8 to 12 The manufacturing process according to aspects of this disclosure is shown sequentially. Figure 3 A diagram showing the manufacturing process of the display module.
[0165] For reference only. Figures 8 to 12 The above reference Figures 1 to 7 Descriptions that are essentially the same can be omitted.
[0166] A method for manufacturing a display module according to aspects of this disclosure (hereinafter, the method for manufacturing a display module) may include: forming a buffer layer 101 on a substrate 100; forming a semiconductor layer 110 on the buffer layer 101; forming a gate insulating film 102 on the semiconductor layer 110; forming a gate layer 120 on the gate insulating film 102; forming an interlayer insulating film 103 on the gate layer 120; forming vias in the interlayer insulating film 103 and the gate insulating film 102; forming a conductive layer 130 on the interlayer insulating film 103 and filling the formed vias with the conductive layer 130; forming an organic insulating layer 104 on the conductive layer 130; and forming a first via TH1 and a second via TH2 in the organic insulating layer 104. Here, the step of forming each layer or film may use conventionally known deposition methods, and the step of forming vias may use conventionally known etching processes, etc. The first via TH1 is disposed on a first thin-film transistor TFT1, and the second via TH2 may be disposed on a second thin-film transistor TFT2.
[0167] like Figure 8 As shown, the method of manufacturing the display module may further include forming a first protrusion 104a1 and a first second protrusion 104a2 on the organic insulating layer 104. For example, the step of forming the first first protrusion 104a1 and the first second protrusion 104a2 may be performed as a process separate from the step of forming the organic insulating layer 104. Alternatively, when using a halftone process, the step of forming the first first protrusion 104a1 and the first second protrusion 104a2 may be the same process as the step of forming the organic insulating layer 104.
[0168] like Figure 9 As shown, the method of manufacturing a display module may further include forming a first pixel electrode 140a covering a first protrusion 104a1 and a second pixel electrode 140b covering a first second protrusion 104a2. The first pixel electrode 140a is filled in a first via TH1, and the second pixel electrode 140b may be filled in a second via TH2.
[0169] like Figure 10 As shown, the method of manufacturing a display module may further include forming a pixel defining layer 105 that exposes at least a central portion EC1 of a first pixel electrode 140a upwardly and at least a central portion EC2 of a second pixel electrode 140b upwardly. The pixel defining layer 105 may cover the edges of the first pixel electrode 140a, the edges of the second pixel electrode 140b, and the upper surface of the organic insulating layer 104.
[0170] like Figure 11As shown, the method of manufacturing a display module may further include forming a first intermediate layer 150a and a second intermediate layer 150b on a pixel defining layer 105, at least a central portion EC1 of a first pixel electrode 140a, and at least a central portion EC2 of a second pixel electrode 140b, and forming a counter electrode 160 on the first intermediate layer 150a and the second intermediate layer 150b. For example, the first intermediate layer 150a may be formed first, and the second intermediate layer 150b may be formed later, and the order in which the first intermediate layer 150a and the second intermediate layer 150b are formed may be changed as needed.
[0171] like Figure 12 As shown, the method of manufacturing a display module may further include forming a thin-film encapsulation layer (TFE) on a first intermediate layer 150a and a second intermediate layer 150b. The thin-film encapsulation layer (TFE) includes a first encapsulation layer 310, a second encapsulation layer 320, and a third encapsulation layer 330, and the first encapsulation layer 310, the second encapsulation layer 320, and the third encapsulation layer 330 may be formed in sequence.
[0172] Figure 13 This is a cross-sectional view showing an example of a display module cross-section based on a comparison example.
[0173] like Figure 13 As shown, the display module according to the comparative example may separately include a high-refractive-index layer 410 for focusing light generated from the intermediate layer 150. The high-refractive-index layer 410 is disposed on the thin-film encapsulation layer TFE, and a functional layer 400 (e.g., a low-refractive-index layer) may be disposed on the high-refractive-index layer 410.
[0174] However, since the high-refractive-index layer 410 is disposed on the thin-film encapsulation layer TFE, the distance between the high-refractive-index layer 410 and the intermediate layer 150 is relatively large. The fact that there is a relatively large distance between the high-refractive-index layer 410 and the intermediate layer 150 means that the light-gathering ability or light-gathering efficiency is reduced.
[0175] Unlike the comparative example, the display module according to the embodiment has the advantage of not requiring a separate high-refractive-index layer 410. In the case of the comparative example, because the distance between the high-refractive-index layer 410 and the intermediate layer 150 is large, there is a problem of reduced light-gathering ability or efficiency. Specifically, since the thin-film encapsulation layer TFE is located between the high-refractive-index layer 410 and the intermediate layer 150, this distance increases due to the thickness of the thin-film encapsulation layer TFE, thereby causing light scattering problems to some extent.
[0176] Conversely, with the display module according to the embodiment, optical efficiency is significantly improved by performing direct light focusing near the intermediate layer 150 through the second first protrusion 310a and the second second protrusion 310b or the grooves OP2-1, OP2-2 formed in the first encapsulation layer 310.
[0177] Furthermore, an advantage of this disclosure is that the height and slope of the protrusions or grooves can be optimized for each wavelength, thereby allowing independent control of the luminous efficiency of each light-emitting element. This ability to optimize the height and slope of the protrusions or grooves for each wavelength to independently control the luminous efficiency of each light-emitting element is a feature that is difficult to achieve using the high-refractive-index layer structure of comparative examples.
[0178] Furthermore, from a manufacturing process perspective, although the comparative example requires a separate high-refractive-index layer formation process, this disclosure can be easily achieved by adding protrusions or grooves to an existing organic insulating layer formation process, thereby simplifying the process and reducing manufacturing costs.
[0179] Based on the above, the electronic device according to the preferred embodiment will be described in detail below.
[0180] Figure 14 It is a block diagram of an electronic device according to aspects of this disclosure.
[0181] refer to Figure 14 The electronic device 1 according to aspects of this disclosure may include a display module 11, one or more processors 12, a memory 13, and a power module 14.
[0182] The aforementioned one or more processors 12 may include at least one selected from the group consisting of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller. The aforementioned one or more processors 12 may perform operations individually or collectively (where each processor 12 performs a portion of the operation). The aforementioned one or more processors 12 may include one or more processor cores, dedicated computing units (e.g., a single instruction multiple data (SIMD) unit, a neural processor, or a compression / decompression (codec) unit), etc.
[0183] The memory 13 can store data information required for the operation of one or more processors 12 or display modules 11. When one or more processors 12 run the application stored in the memory 13, video data signals and / or input control signals are transmitted to the display module 11, and the display module 11 processes the provided signals to output video information through the display screen.
[0184] The power module 14 may include a power supply module such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 1.
[0185] At least one of the components of the electronic device 1 described above may be included in the display device according to the embodiment. Furthermore, in terms of function, some of the modules described above may be included in the display device, while others may be provided separately from the display device. For example, the display device may include the display module 11 and one or more processors 12 described above. The memory 13 and the power module 14 may be provided in the form of other devices in the electronic device 1 that are not part of the display device.
[0186] Figure 14 The display module 11 in the middle can refer to Figures 1 to 12 One of the display modules 11 described herein. For ease of description, other explanations are omitted, but those skilled in the art can understand based on... Figures 1 to 12 The description is easy and clear to understand. Figure 14 The display module 11.
[0187] In one embodiment, the electronic device 1 may include a memory 13 for storing data information, a processor 12 for generating data signals and / or control signals based on the data information, and a display module 11 that operates based on the data signals and / or control signals. The display module 11 may be... Figures 1 to 12 Any one of the display modules 11.
[0188] Figure 15 This is a schematic diagram of an electronic device according to aspects of this disclosure.
[0189] refer to Figure 15 The various electronic devices that utilize the display device according to the embodiments may include not only image display electronic devices such as smartphones 1_1a, tablet PCs 1_1b, laptop computers 1_1c, TVs 1_1d, and desktop monitors 1_1e, but also wearable electronic devices including display modules such as smart glasses 1_2a, head-mounted displays 1_2b, and smartwatches 1_2c, as well as vehicle electronic devices 10_3 including display modules such as car dashboards, center consoles, central information displays (CIDs) mounted on dashboards, and interior mirror displays.
[0190] As described above, this disclosure has been illustrated with reference to the embodiments shown in the accompanying drawings; however, this is merely exemplary, and those skilled in the art will understand that various modifications and other equivalent embodiments can be made therefrom. Therefore, the true scope of protection of this disclosure should be determined by the technical spirit of the claims.
[0191] According to one or more embodiments described above, a display module with improved luminous efficiency and an electronic device including the display module can be realized. However, the scope of this disclosure is not limited to these effects.
[0192] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and are not intended to be limiting. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the claims.
Claims
1. A display module, comprising: substrate; A first thin-film transistor is disposed on the substrate; An insulating layer is disposed on the first thin-film transistor and has a first through-hole, the insulating layer including a first protrusion having a first height around the first through-hole; A first pixel electrode is disposed on the insulating layer and electrically connected to the first thin-film transistor through the first via. The first pixel electrode has a step relative to the upper surface of the insulating layer that corresponds to the first height. A pixel defining layer is disposed on the first pixel electrode and exposes at least the central portion of the first pixel electrode upwards; A first intermediate layer is disposed on the pixel defining layer, generates light of a first wavelength, and covers at least the central portion of the first pixel electrode; A first encapsulation layer is disposed on the first intermediate layer, has a first refractive index, and includes a second first protrusion projecting toward the upper portion; as well as A second encapsulation layer is disposed on the first encapsulation layer and has a second refractive index that is smaller than the first refractive index.
2. The display module according to claim 1, wherein, In the plan view, the first protrusion is disposed within the second protrusion.
3. The display module according to claim 1, wherein, In the plan view, the first through hole is spaced apart from the first protrusion.
4. The display module according to claim 1, wherein, In the plan view, the first pixel electrode is disposed within the second first protrusion.
5. The display module according to claim 1, wherein, In the plan view, at least the central portion of the first pixel electrode is disposed within the upper surface of the second first protrusion.
6. The display module according to claim 5, wherein, In the plan view, at least the central portion of the first pixel electrode does not overlap with the outer surface of the second first protrusion.
7. The display module according to claim 1, wherein, The difference between the first refractive index and the second refractive index is in the range of 0.1 to 0.
7.
8. The display module according to claim 1, wherein, The thickness of the first protrusion is greater than the thickness of the pixel defining layer.
9. The display module according to claim 1, wherein, The pixel defining layer comprises an inorganic material, the first encapsulation layer comprises an inorganic material, and the second encapsulation layer comprises a monomeric material. The display module further includes a third encapsulation layer disposed on the second encapsulation layer, wherein the third encapsulation layer comprises inorganic materials.
10. The display module according to claim 1, wherein, The second first protrusion is disposed in the optical path of the first wavelength of light traveling from the first intermediate layer in a direction away from the substrate.
11. The display module according to claim 1, wherein, The outer surface of the second first protrusion refracts the light of the first wavelength.
12. The display module according to claim 1, wherein, The insulating layer further has a second through-hole and further includes a first second protrusion having a second height around the second through-hole.
13. The display module according to claim 12, further comprising: A second thin-film transistor is disposed on the substrate; The second pixel electrode is disposed on the same layer as the first pixel electrode, is electrically connected to the second thin film transistor through the second via, has a step corresponding to the second height relative to the upper surface of the insulating layer, and has at least a central portion exposed towards the upper part through the pixel defining layer; as well as The second intermediate layer, disposed on the same layer as the first intermediate layer, generates light of the second wavelength and covers at least the central portion of the second pixel electrode.
14. The display module according to claim 13, wherein, The first wavelength is shorter than the second wavelength, and the first height is greater than the second height. The first encapsulation layer further includes a second protrusion projecting toward the upper portion. In the plan view, the first and second protrusions are disposed within the second protrusion. In the plan view, the second through hole is spaced apart from the first and second protrusions. In the plan view, at least the central portion of the second pixel electrode is disposed within the upper surface of the second protrusion, and In the plan view, at least the central portion of the second pixel electrode does not overlap with the outer surface of the second protrusion.
15. An electronic device comprising: The memory is configured to store data information; The processor is configured to generate data signals and / or control signals based on the data information; as well as The display module according to any one of claims 1 to 14 is configured to operate based on the data signal and / or the control signal.