An interconnected heat dissipation integrated glass substrate and three-dimensional stacked radio frequency system

Abstract

The present application relates to the technical field of glass substrate radio frequency system, and particularly relates to an interconnected heat dissipation integrated glass substrate and a three-dimensional stacked radio frequency system, which comprises a first glass substrate, a first microchannel is formed in the first glass substrate, a chip is arranged on one side surface of the first glass substrate, the chip is connected with the first microchannel through a heat dissipation TGV on the first glass substrate, a first RDL layer is arranged on the other side surface of the first glass substrate, and the chip is connected with the first RDL layer through a communication TGV on the first glass substrate. The glass substrate structure reduces the number of stacked layers of the whole system, the first microchannel reduces the interface thermal resistance by directly introducing the cooling medium into the chip substrate, and high-efficiency heat dissipation of the chip is realized; the two-stage architecture microchannel heat dissipation design can provide heat dissipation for other low-power integrated modules. The overall structure temperature rise can be avoided, the number of stacked radio frequency systems is reduced, the warping problem is avoided, and the stability and reliability and service life of the structure are improved.

Description

Technical Field

[0001] This invention relates to the field of glass substrate radio frequency system technology, and more specifically to an integrated glass substrate for interconnection and heat dissipation in high-power radio frequency systems, and a three-dimensional stacked radio frequency system based on the glass substrate. Background Technology

[0002] With the continuous increase in system integration density, miniaturization, lightweighting, integration, versatility, and comprehensiveness have become the development trends of electronic devices, thus placing higher demands on advanced high-density integrated interconnect packaging substrate technology. In high-frequency applications, silicon materials, due to their excessively high dielectric constant and loss factor, cause significant signal loss. TGV technology (Through Glass Via), as an emerging three-dimensional interconnect solution, provides superior performance for RF integrated systems, mainly manifested in ultra-low transmission loss, broadband stability, and excellent thermal matching. However, compared to silicon (approximately 150 W•m),... -1 •K -1 Compared to glass, which has a thermal conductivity of approximately 1 W·m, glass has a thermal conductivity of... -1 •K -1 The junction temperature of TGV glass substrates is much lower than that of conventional chips, resulting in significant heat dissipation issues. For high-power chips integrated in packages, reducing the junction temperature during operation can effectively improve chip lifespan. Therefore, developing TGV glass substrates with high-efficiency heat dissipation is crucial for advancing the future application of this technology. Consequently, a more reasonable technical solution is needed to address the problems existing in current technologies. Summary of the Invention

[0003] This invention aims to provide an integrated glass substrate for interconnection and heat dissipation and a three-dimensional stacked radio frequency system. By fabricating a heat dissipation structure with high thermal conductivity, micro heat exchange is achieved, enabling rapid and efficient heat conduction. This solves the unavoidable substrate warping problem caused by multi-layer glass stacking and improves the stability and reliability of the system structure.

[0004] To achieve the above objectives, the integrated glass substrate disclosed in this invention can be implemented using the following method: An integrated interconnect and heat dissipation glass substrate includes a first glass substrate, in which a first microchannel is formed. A chip is disposed on one side surface of the first glass substrate, and the chip is connected to the first microchannel via a heat dissipation TGV on the first glass substrate. A first RDL layer (ReDistributionLayer) is disposed on the other side surface of the first glass substrate, and the chip is connected to the first RDL layer via a communication TGV on the first glass substrate.

[0005] The aforementioned integrated glass substrate employs an ultrafast laser-chemical etching process to fabricate a heat dissipation structure with high thermal conductivity near the chip or device adjacent to the heat source on the glass substrate. This structure achieves micro-heat exchange through a heat conduction channel with ultra-low thermal resistance, rapidly and effectively transferring heat to the heat dissipation structure. Simultaneously, TGV vias for electrical interconnection are integrally fabricated on the glass substrate, forming an integrated interconnection-heat dissipation glass substrate.

[0006] Furthermore, after a heat dissipation TGV is formed on the first glass substrate, it can be used for chip heat dissipation. To improve the heat dissipation effect, a more suitable heat dissipation medium can be used. Here, optimization is carried out to improve the heat dissipation effect: the heat dissipation TGV is filled with a thermally conductive medium. When adopting the above scheme, the thermally conductive medium can be a thermally conductive metal pillar.

[0007] Furthermore, when the first, second, and third glass substrates communicate, they can communicate through the channel formed by the communication TGV. A transmission medium can be installed inside the communication TGV to improve communication performance. Here, an optimization is proposed, and one feasible option is to fill the communication TGV with a communication medium. When adopting the above scheme, the communication medium can be gold-plated using electroplating metallization technology.

[0008] The foregoing describes an integrated glass substrate for interconnection and heat dissipation as disclosed in this invention. This invention also discloses a three-dimensional stacked radio frequency system.

[0009] A three-dimensional stacked radio frequency system includes an integrated glass substrate as described above, comprising a multilayer ceramic substrate, wherein mounting grooves for mounting the integrated glass substrate are formed within the multilayer ceramic substrate; a second glass substrate is disposed on the integrated glass substrate to form a radio frequency layer, a second RDL layer is disposed on the second glass substrate and connected to a chip and a first RDL layer; a third glass substrate is further disposed on the second glass substrate to form an antenna layer, a third RDL layer is disposed on the third glass substrate and connected to the second RDL layer.

[0010] The aforementioned three-dimensional stacked RF system proposes a three-dimensional stacked RF microsystem structure based on the interconnected heat dissipation integrated glass substrate. By using ultrafast laser-chemical etching integrated manufacturing technology, the number of glass substrate layers is reduced, which can solve the unavoidable substrate warping problem caused by multi-layer glass stacks. This realizes the design and manufacturing of a high-density integrated system with heterogeneous structure and function based on a glass substrate.

[0011] Furthermore, to improve communication performance, an optimization is proposed, and one feasible option is suggested: several communication TGVs are disposed on the third glass substrate, and the third RDL layer is connected to the first RDL layer through the communication TGVs. When the above scheme is adopted, the antenna layer formed by the third glass substrate is communicatively connected to the first RDL layer through the third RDL layer.

[0012] Furthermore, when the multilayer ceramic substrate and the first glass substrate are combined, an auxiliary liquid-cooled circulation structure is formed on the first glass substrate. The specific structure can adopt various schemes and is not limited to one. Here, we optimize and propose one feasible option: a second microchannel is provided within the multilayer ceramic substrate, and the second microchannel communicates with the first microchannel to form a circulation channel. When adopting the above scheme, the second microchannel extends from the side of the multilayer ceramic substrate to the bottom of the mounting groove and communicates with the first microchannel.

[0013] Furthermore, to better mount the chip and facilitate heat dissipation during operation, an optimization is proposed, suggesting one feasible option: forming a corresponding receiving structure on the second glass substrate. In this approach, the receiving structure can be a central hole, directly opposite the chip on the first glass substrate, allowing the chip to be housed within sufficient space for heat dissipation. If necessary, a corresponding upper groove can also be provided on the third glass substrate to further facilitate chip heat dissipation.

[0014] Furthermore, the second glass substrate communicates with the chip, which can be achieved in various ways. Here, we optimize and propose one feasible option: the second RDL layer is connected to the chip via gold wires.

[0015] Furthermore, the circuits integrated in each RDL layer are not the same. Here, optimization is performed and one feasible option is proposed: The first RDL layer includes a ground layer and interconnect circuits disposed on the upper surface of the first glass substrate, and a ground layer disposed on the lower surface of the first glass substrate; the second RDL layer includes an RF microstrip and ground layer disposed on the upper surface of the second glass substrate, and a ground layer disposed on the lower surface of the second glass substrate; the third EDL layer includes a radiating array element disposed on the upper surface of the third glass substrate, and an interconnect circuit and ground layer disposed on the lower surface of the third glass substrate.

[0016] Furthermore, a fourth RDL layer is also provided on the multilayer ceramic substrate, and the antenna layer is connected to the fourth RDL layer.

[0017] Compared with the prior art, some of the beneficial effects of the technical solution disclosed in this invention include: The integrated glass substrate structure for interconnection and heat dissipation reduces the number of layers in the entire system. Simultaneously, the first microchannel on the integrated glass substrate directly introduces the cooling medium into the chip substrate, further reducing interface thermal resistance and effectively achieving efficient chip heat dissipation. A second microchannel is set on the multilayer ceramic substrate, realizing a two-stage microchannel heat dissipation design that can provide heat dissipation for other low-power integrated modules. This structure prevents excessive temperature rise during operation and reduces the number of layers in the RF system, thus avoiding warpage issues caused by multilayer structures and improving the overall stability, reliability, and lifespan of the structure. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the interconnected heat dissipation integrated glass substrate structure of the present invention.

[0020] Figure 2 This is a schematic diagram of the glass stacked substrate structure of the present invention, including an antenna layer and a radio frequency layer.

[0021] Figure 3 This is a schematic diagram of the LTCC (Low Temperature Co-fired Ceramic) multilayer ceramic substrate structure of the present invention.

[0022] Figure 4 This is a schematic diagram of the three-dimensional stacked radio frequency system structure based on an interconnected heat dissipation integrated glass substrate of the present invention.

[0023] In the above attached figures, the meanings of each label are as follows: 1. First glass substrate; 2. First microchannel; 3. Chip; 4. Thermally conductive medium; 5. Communication TGV; 6. First RDL layer; 7. Gold wire; 8. Insulating medium; 10. Second glass substrate; 11. Third glass substrate; 12. Second microchannel; 13. Multilayer ceramic substrate. Detailed Implementation

[0024] The following description, in conjunction with the accompanying drawings and specific embodiments, further illustrates this embodiment.

[0025] In view of the fact that the existing radio frequency system has a high temperature rise during operation, resulting in a short effective life of the chip, the following embodiments are optimized and overcome the defects of the existing technology.

[0026] Example 1 like Figure 1 As shown, this embodiment provides an integrated interconnect and heat dissipation glass substrate, including a first glass substrate 1. A first microchannel 2 is formed inside the first glass substrate 1. A chip 3 is disposed on one side surface of the first glass substrate 1. The chip 3 is connected to the first microchannel 2 through a heat dissipation TGV on the first glass substrate 1. A first RDL layer 6 (ReDistribution Layer) is disposed on the other side surface of the first glass substrate 1. The chip 3 is connected to the first RDL layer 6 through a communication TGV 5 on the first glass substrate 1.

[0027] After a heat dissipation TGV is formed on the first glass substrate 1, it can be used to dissipate heat from the chip 3. To improve the heat dissipation effect, a more suitable heat dissipation medium can be used. In this embodiment, optimization is carried out to improve the heat dissipation effect: the heat dissipation TGV is filled with a thermally conductive medium 4. When using the above scheme, the thermally conductive medium 4 can be a thermally conductive metal pillar.

[0028] Preferably, in the structure disclosed in this embodiment, the chip 3 and the first glass substrate 1 achieve micro heat exchange through thermally conductive copper pillars, which quickly and effectively conducts heat to the heat dissipation microchannel.

[0029] When the first glass substrate 1, the second glass substrate 10, and the third glass substrate 11 communicate, they can communicate through the channel formed by the communication TGV5. A transmission medium can be installed inside the communication TGV5 to improve communication performance. This embodiment optimizes this by employing one feasible option: the communication TGV5 is filled with a communication medium. When using the above scheme, the communication medium can be gold-plated using electroplating metallization technology.

[0030] Preferably, the communication TGV5 filling adopts an electroplating filling through-hole process to achieve TGV electrical interconnection with a depth-to-diameter ratio of 20:1. The heat dissipation TGV filling adopts a 3D printing filling process, which fills the connection hole between the chip 3 mounting position and the heat dissipation microchannel by filling high thermal conductivity metal paste into the connection hole of the heat dissipation microchannel through a single-sided filling method. The heat dissipation TGV array forms an ultra-low thermal resistance heat conduction channel to achieve micro-efficient heat exchange.

[0031] During the electroplating and metallization process, it is necessary to protect the thermally conductive holes and the interior of the microchannels to ensure that the thermally conductive holes and the interior of the microchannels are not affected by electroplating. Therefore, before electroplating and metallization of the RDL, a precision direct-write 3D printing filling process is used to fill the connection hole between the chip 3 mounting position and the heat dissipation microchannel with a high thermal conductivity metal paste through a single-sided filling method. This achieves an ultra-low thermal resistance thermally conductive TGV array and at the same time prevents the seed layer deposition and the impact of the electroplating solution on the interior of the microchannels during the electroplating process.

[0032] The interconnected heat dissipation integrated glass substrate disclosed in this embodiment is made of quartz glass, with dimensions of 10mm×10mm×1mm. The cross-sectional dimensions of the internal square microchannels are 0.6mm×0.5mm for the main channel and 0.3mm×0.5mm for the branch channels, with a channel opening diameter of 1mm. The communication TGV5 has dimensions of 50μm×1mm, and the heat dissipation TGV has dimensions of 50μm×0.25mm. The above dimensions can be adjusted according to actual needs.

[0033] The integrated glass substrate disclosed in this embodiment uses an ultrafast laser-chemical etching process to fabricate a heat dissipation structure with high thermal conductivity near the chip 3 or device close to the heat source on the glass substrate. This structure achieves micro heat exchange through a heat conduction channel with ultra-low thermal resistance, and conducts heat to the heat dissipation structure quickly and effectively. At the same time, TGV vias for electrical interconnection are integrally processed on the glass substrate to form an interconnection-heat dissipation integrated glass substrate.

[0034] The integrated glass substrate disclosed in this embodiment relates to a method for manufacturing an integrated glass substrate for interconnection and heat dissipation. First, laser modification is performed on a designated location of the glass substrate based on ultrafast laser-chemical etching micro-nano processing technology, including TGV modification areas and microchannel processing modification areas. Then, ultrasonic-assisted chemical etching technology is used to achieve integrated molding of TGV and microchannel. This process can achieve the integrated processing and manufacturing of glass substrate through holes and microchannels of different sizes by adjusting the laser and etching parameters.

[0035] Preferably, after processing the TGV vias and microchannel areas using femtosecond laser confinement modification technology, the substrate is placed in a strong acid or strong alkali solution environment and ultrasonic-assisted chemical etching technology is used to achieve the simultaneous molding of TGV and microchannels in an integrated manner.

[0036] Based on the glass substrate disclosed in this embodiment, taking the heat dissipation of the T / R component of an active phased array radar as an example, the heat generation is concentrated in the power amplifier chip 3 of the T / R component. In this structure, there are two main heat dissipation paths for chip 3. One is that the upper surface of chip 3 is directly cooled by air convection with the external space. The other is that the heat generated by chip 3 is conducted to the liquid cooling channel through the lower solder layer and TGV heat conduction holes. Among them, the first path is natural convection due to the extremely low thermal conductivity of air and the absence of forced convection devices such as fans. The heat dissipation efficiency is extremely low and can be ignored. Therefore, the heat generated by chip 3 is mainly conducted to the liquid cooling channel through the second path, that is, through the solder layer and TGV heat conduction holes, to achieve efficient heat dissipation.

[0037] Example 2 The above embodiment 1 describes an integrated glass substrate for interconnection and heat dissipation, and this embodiment discloses a three-bit stacked radio frequency system.

[0038] likeFigures 2-4 As shown, a three-dimensional stacked radio frequency system includes the integrated glass substrate described in Embodiment 1 above, including a multilayer ceramic substrate 13, in which mounting grooves for mounting the integrated glass substrate are formed; a second glass substrate 10 is disposed on the integrated glass substrate to form a radio frequency layer, a second RDL layer is disposed on the second glass substrate 10 and connected to the chip 3 and the first RDL layer 6; a third glass substrate 11 is also disposed on the second glass substrate 10 to form an antenna layer, a third RDL layer is disposed on the third glass substrate 11 and connected to the second RDL layer.

[0039] Preferably, the multilayer ceramic substrate 13 in this embodiment is made of LTCC material (Low Temperature Co-fired Ceramic).

[0040] The three-dimensional stacked radio frequency system disclosed in this embodiment adopts a three-dimensional stacked radio frequency microsystem structure based on the interconnected heat dissipation integrated glass substrate. By using ultrafast laser-chemical etching integrated manufacturing technology, the number of glass substrate layers is reduced, which can solve the unavoidable substrate warping problem caused by multi-layer glass stacks. This realizes the design and manufacturing of a high-density integrated system with heterogeneous structure and function based on a glass substrate.

[0041] To improve communication performance, this embodiment optimizes and adopts one feasible option: a plurality of communication TGV5s are disposed on the third glass substrate 11, and the third RDL layer is connected to the first RDL layer 6 through the communication TGV5s. When the above scheme is adopted, the antenna layer formed by the third glass substrate 11 is communicatively connected to the first RDL layer 6 through the third RDL layer.

[0042] When the multilayer ceramic substrate 13 is fitted with the first glass substrate 1, it assists the first glass substrate 1 in forming a liquid-cooled circulation structure. The specific structure can adopt various schemes and is not limited to one. This embodiment optimizes and adopts one feasible option: a second microchannel 12 is provided within the multilayer ceramic substrate 13, and the second microchannel 12 communicates with the first microchannel 2 to form a circulation channel. When the above scheme is adopted, the second microchannel 12 extends from the side of the multilayer ceramic substrate 13 to the bottom of the mounting groove and communicates with the first microchannel 2.

[0043] To better mount chip 3 and facilitate heat dissipation during operation, this embodiment optimizes the process and adopts one feasible option: forming a receiving structure corresponding to chip 3 on the second glass substrate 10. When using this solution, the receiving structure can be a central hole, directly opposite chip 3 on the first glass substrate 1, allowing chip 3 to be accommodated within a relatively sufficient space for heat dissipation.

[0044] When necessary, a corresponding upper groove can also be provided on the third glass substrate 11 to facilitate heat dissipation of the chip 3.

[0045] Preferably, in this embodiment, an upper groove is provided on the third substrate. Based on ultrafast laser processing technology, a groove with a depth of 0.1mm is dug on one side above the chip 3 to accommodate the chip 3 below. The surface of the upper groove is plated with a grounding metal layer.

[0046] The second glass substrate 10 is connected to the chip 3 through communication. There are various ways to do this. This embodiment optimizes the connection and adopts one of the feasible options: the second RDL layer is connected to the chip 3 through gold wires.

[0047] The circuits integrated in each RDL layer are not the same. This embodiment optimizes and adopts one of the feasible options: the first RDL layer 6 includes a ground layer and interconnect circuit disposed on the upper surface of the first glass substrate 1, and a ground layer disposed on the lower surface of the first glass substrate 1; the second RDL layer includes an RF microstrip and ground layer disposed on the upper surface of the second glass substrate 10, and a ground layer disposed on the lower surface of the second glass substrate 10; the third EDL layer includes a radiating array element disposed on the upper surface of the third glass substrate 11, and an interconnect circuit and ground layer disposed on the lower surface of the third glass substrate 11.

[0048] Preferably, in this embodiment, the chip on the first glass substrate is fixed on one side of the surface directly connected to the heat dissipation TGV and electrically connected to the surface interconnect circuit by gold wire bonding. On the other side, i.e., the first RDL layer 6, there is a ground layer and an interconnect layer. The ground layer and the TGV connected thereto form a shielding structure to prevent radio frequency signal leakage, and the interconnect layer and the TGV connected thereto form an interconnect circuit to transmit electrical signals. The second glass substrate, i.e., the radio frequency connection glass substrate, has radio frequency microstrip lines on its surface, which are connected to the chip by gold wire bonding. It is also provided with a ground metal layer and a shielding TGV.

[0049] In this embodiment, a fourth RDL layer is also provided on the multilayer ceramic substrate 13, and the antenna layer is connected to the fourth RDL layer.

[0050] This embodiment also describes the manufacturing method of the corresponding radio frequency system. Ultrafast laser-modified etching process is used to achieve TGV drilling and integrated microchannel processing; electroplating process is used to achieve TGV filling; the surface RDL is formed with an Au circuit layer through photolithography; before Au deposition, an adhesion layer Ti and a seed layer Ni are deposited; direct-write 3D printing process is used to fill the heat dissipation interconnect holes above the microchannels with copper, which can also be replaced with other high thermal conductivity materials; gold-gold low-temperature bonding process is used to connect the integrated interconnect and heat dissipation glass substrate, the radio frequency connection glass substrate, and the antenna layer glass substrate; welding or adhesive bonding is used to connect the glass stacked substrate and the LTCC multilayer ceramic substrate 13; and a warm isostatic pressing co-firing process after filling with sacrificial material is used to achieve integrated microchannel molding of the LTCC substrate.

[0051] The three-layer glass stacked substrate is realized using Au-Au bonding technology. Based on the integrated interconnect and heat dissipation glass substrate, the number of stacked layers in the entire system is reduced. At the same time, the integrated glass-based microchannels further reduce the interface thermal resistance by directly introducing the cooling medium into the chip 3 substrate, effectively realizing efficient heat dissipation of the chip 3. The LTCC multilayer ceramic substrate 13 is realized using a temperature isostatic pressing co-firing process after filling with sacrificial material, which can control the deformation of the microchannel cavity. Based on this structure, a two-level architecture microchannel heat dissipation design is realized. On the basis of this LTCC microchannel, heat dissipation can be provided for other low-power integrated modules. The glass stacked substrate and the LTCC multilayer ceramic substrate 13 are connected by welding or adhesive bonding. The bottom of the glass stacked substrate is set as a ground layer. The glass stacked substrate and the LTCC multilayer ceramic substrate 13 are bonded to the gold wires 7 of the chip 3 through surface microstrip lines to achieve radio frequency connection. The gap between the chip 3 and the substrate is filled with insulating medium 8.

[0052] According to the radio frequency system disclosed in this embodiment, it can be determined that the thickness of the first glass substrate 1 is relatively large, which is not conducive to impedance matching of radio frequency signal transmission. Therefore, it is necessary to stack a radio frequency connection glass substrate, namely the second glass substrate 10, on the first glass substrate 1. The thickness of the radio frequency connection glass substrate is easy to adjust, which can better achieve microwave radio frequency transmission performance.

[0053] Meanwhile, as can be seen from the description of this embodiment, the number of glass stacking layers is 3, which is less than the number of stacking layers (≥5 layers) of a typical glass-based radio frequency system. The reason is that the first glass substrate 1 is used as the substrate. Based on its integrated structure, multiple functions such as heat conduction of chip 3, microchannel heat dissipation, and TGV interconnection can be integrated without stacking. This reduces the inevitable glass substrate warping and stress concentration problems caused by too many stacking layers, and effectively improves the system integration and reliability.

[0054] In the glass-based radio frequency system provided in this embodiment, both the antenna layer and the radio frequency layer are made of glass substrate. From the perspective of package performance, in terms of electrical performance, since the glass substrate has a lower dielectric constant than the silicon substrate, the glass substrate has a smaller response in the electric field, which helps to reduce crosstalk and noise in the circuit.

[0055] In this embodiment, the main function of the LTCC multilayer ceramic substrate 13 is to realize the low-frequency control circuit and the RF input and output circuit. It can also embed passive devices such as resistors, capacitors, and filters, and can integrate other functional modules in the RF system according to actual needs. The embedded microchannel is used to connect the microchannel of the glass substrate. The water distribution layer can be designed according to actual needs. The coolant circulation of the whole system is as follows: the coolant enters from the LTCC liquid cooling inlet, then flows into the interconnected heat dissipation integrated glass substrate, and after completing the heat exchange, it flows into the LTCC microchannel again from another connection point, and finally flows out from the LTCC liquid cooling outlet.

[0056] The purpose of the surface-mount mounting cavity design is to shorten the distance and height matching between the LTCC surface RF microstrip and the second glass substrate 10, so as to facilitate the gold wire 7 bonding connection. At the same time, the LTCC substrate can meet the RF connector installation according to actual needs.

[0057] The above are the embodiments listed in this example; however, this example is not limited to the optional embodiments described above; those skilled in the art can arbitrarily combine the above methods to obtain other various embodiments; anyone can derive other various forms of embodiments under the guidance of this example. The above specific embodiments should not be construed as limiting the scope of protection of this example; the scope of protection of this example should be determined by the claims.

Claims

1. An integrated glass substrate for interconnection and heat dissipation, characterized in that: The first glass substrate (1) includes a first microchannel (2) formed inside the first glass substrate (1). A chip (3) is disposed on one side surface of the first glass substrate (1). The chip (3) is connected to the first microchannel (2) through a heat dissipation TGV on the first glass substrate (1). A first RDL layer (6) is disposed on the other side surface of the first glass substrate (1). The chip (3) is connected to the first RDL layer (6) through a communication TGV (5) on the first glass substrate (1).

2. The integrated heat dissipation glass substrate according to claim 1, characterized in that: The heat dissipation TGV is filled with a heat-conducting medium (4).

3. The integrated heat dissipation glass substrate according to claim 1, characterized in that: The communication TGV (5) is filled with a communication medium.

4. A three-dimensional stacked radio frequency system, comprising an integrated glass substrate as described in any one of claims 1 to 3, characterized in that: The system includes a multilayer ceramic substrate (13) in which mounting grooves for mounting an integrated glass substrate are formed; a second glass substrate (10) is disposed on the integrated glass substrate to form a radio frequency layer, and a second RDL layer is disposed on the second glass substrate (10) and connected to the chip (3) and the first RDL layer (6); a third glass substrate (11) is also disposed on the second glass substrate (10) to form an antenna layer, and a third RDL layer is disposed on the third glass substrate (11) and connected to the second RDL layer.

5. The three-dimensional stacked radio frequency system according to claim 4, characterized in that: The third glass substrate (11) is provided with a plurality of communication TGVs (5), and the third RDL layer is connected to the first RDL layer (6) through the communication TGVs (5).

6. The three-dimensional stacked radio frequency system according to claim 4, characterized in that: The multilayer ceramic substrate (13) is provided with a second microchannel (12), which is connected to the first microchannel (2) to form a circulation channel.

7. The three-dimensional stacked radio frequency system according to claim 4, characterized in that: A receiving structure corresponding to the chip (3) is formed on the second glass substrate (10).

8. The three-dimensional stacked radio frequency system according to claim 4, characterized in that: The second RDL layer is connected to the chip (3) via gold wires.

9. The three-dimensional stacked radio frequency system according to claim 4, characterized in that: The first RDL layer (6) includes a ground layer and interconnection circuit disposed on the upper surface of the first glass substrate (1) and a ground layer disposed on the lower surface of the first glass substrate (1); the second RDL layer includes a radio frequency microstrip and ground layer disposed on the upper surface of the second glass substrate (10) and a ground layer disposed on the lower surface of the second glass substrate (10); the third EDL layer includes a radiating array element disposed on the upper surface of the third glass substrate (11) and an interconnection circuit and ground layer disposed on the lower surface of the third glass substrate (11).

10. The three-dimensional stacked radio frequency system according to claim 4, characterized in that: A fourth RDL layer is also provided on the multilayer ceramic substrate (13), and the antenna layer is connected to the fourth RDL layer.

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