System and method for real-time time-integrated square (TIS) and speckle contrast (SC) control in duv lasers

Abstract

A light source apparatus includes a gas discharge stage configured to output a light beam and a time-integrated square (TIS) apparatus configured to receive a portion of the light beam and measure a TIS pulse width of the light beam in a time domain. The TIS apparatus is configured to calculate a speckle contrast (SC) of the light beam based on the measured TIS pulse width. The TIS pulse width is measured in real-time or near real-time. The calculated SC can be provided to a lithography apparatus to reduce errors in a lithographic process. Advantageously, the apparatus can measure the TIS pulse width in real-time, calculate the SC in real-time, adjust one or more parameters of the SC to control the SC, reduce errors in the lithographic process, perform diagnostics of the light source apparatus, and identify an optimal maintenance schedule for the light source apparatus.

Description

Cross-reference to related applications

[0001] This application claims priority to U.S. Patent Application No. 63 / 611,815, filed December 19, 2023, entitled “System and Method for Real-Time Time Integral Square (TIS) and Speckle Contrast (SC) Control in a Deep Ultraviolet (DUV) Laser,” the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates to light source apparatuses, systems, and methods, such as light source apparatuses, systems, and methods having a time integral square (TIS) device for measuring and controlling beam speckle contrast (SC). Background Technology

[0003] A photolithography apparatus is a machine configured to apply a desired pattern onto a substrate. Photolithography apparatuses are used, for example, in the manufacture of integrated circuits (ICs). A photolithography apparatus can project a pattern from a patterning device (e.g., a mask, a marker) onto a layer of radiation-sensitive material (photoresist, or simply "resist") disposed on a substrate.

[0004] To project patterns onto a substrate, a photolithography apparatus can use electromagnetic radiation. The wavelength of this radiation determines the minimum size of the feature that can be formed on the substrate. Photolithography apparatuses using deep ultraviolet (DUV) radiation (wavelengths in the range of 20-400 nm, such as 193 nm or 248 nm) can be used to form features on a substrate.

[0005] A master oscillator power amplifier (MOPA) or master oscillator power ring amplifier (MOPRA) is a two-stage optical resonator arrangement that produces a highly coherent amplified laser beam. The performance of a MOPA or MOPRA can critically depend on the master oscillator (MO), the power amplifier (PA), and / or the power ring amplifier (PRA). The electrodes of the MO, PA, and / or PRA surrounding the gas discharge medium, as well as the optical components of the MOPA or MOPRA, degrade over time, leading to reduced laser performance and the need for laser maintenance.

[0006] Speckle is a laser phenomenon caused by self-interference of coherent light, which can lead to random localized illumination inhomogeneities. Speckle contrast (SC) is a measure of the variation in localized illumination intensity across the speckle pattern. Inhomogeneities in laser beam illumination can cause patterning inhomogeneities and introduce errors in photolithography processes. One parameter of SC is the time integral square (TIS) pulse width of the laser beam. However, existing systems do not monitor the TIS pulse width, and therefore do not measure the SC of the laser beam over time. Furthermore, existing systems do not control and / or optimize SC over time. Summary of the Invention

[0007] Therefore, there is a need to develop a system capable of measuring the TIS pulse width in real-time or near real-time, calculating the SC in real-time or near real-time, and adjusting one or more parameters of the SC to control the SC (e.g., in real-time). This novel approach can reduce errors in the lithography process, perform diagnostics on the light source device, and identify optimal maintenance plans for the light source device.

[0008] In some embodiments, the light source device may include a gas discharge stage and a time integral square (TIS) device. In some embodiments, the gas discharge stage may be configured to output a light beam. In some embodiments, the gas discharge stage may include an optical amplifier containing a chamber configured to contain a gas discharge medium. In some embodiments, the gas discharge stage may include an excitation device configured to excite the gas discharge medium and generate a light beam. In some embodiments, the TIS device may be configured to receive a portion of the light beam and measure the time integral square (TIS) pulse width of the beam in the time domain. In some embodiments, the TIS device may be further configured to calculate the speckle contrast (SC) of the beam based on the measured TIS pulse width. In some embodiments, the TIS pulse width is measured in real time or near real time. In some embodiments, the calculated SC is provided to a lithography apparatus to reduce errors in the lithography process.

[0009] In some embodiments, SC is calculated in real time. In some embodiments, SC is calculated in near real time. In some embodiments, SC is calculated within 1 ms. In some embodiments, SC is calculated within the response time of one or more actuators of the light source device.

[0010] In some embodiments, SC is determined by the following formula: Speckle contrast (SC) = Where TIS is the time integral squared (TIS) pulse width in the time domain, λ is the wavelength of the beam, c is the speed of light, BW is the bandwidth of the beam, and A... beam It is the cross-sectional area of ​​the light beam, Ω div It is the beam divergence angle of the light beam.

[0011] In some embodiments, the TIS pulse width, beam wavelength, beam bandwidth, beam cross-sectional area, and / or beam divergence angle can be measured in real time. In some embodiments, the TIS pulse width, beam wavelength, beam bandwidth, beam cross-sectional area, and beam divergence angle can be measured in near real time.

[0012] In some embodiments, the bandwidth of the beam is an E95 bandwidth, corresponding to a beam spectral bandwidth that contains 95% of the total pulse energy of the beam.

[0013] In some embodiments, the light source device can be configured to adjust the TIS pulse width based on the calculated SC, thereby reducing critical dimension (CD) non-uniformity in the lithography device.

[0014] In some embodiments, the TIS pulse width can be measured in near real-time. In some embodiments, the TIS pulse width can be measured in the range of about 1 second to about 10 seconds. In some embodiments, the TIS pulse width can be measured in real-time. In some embodiments, the TIS pulse width can be measured in the range of about 10 milliseconds to about 1 second. In some embodiments, the TIS pulse width can be measured in real-time within 1 millisecond. In some embodiments, the TIS pulse width can be measured in real-time within 0.1 milliseconds.

[0015] In some embodiments, the TIS pulse width can be measured over time to perform diagnostics on the light source device. In some embodiments, the TIS pulse width can be measured over time to identify performance trends of one or more optical components of the light source device. In some embodiments, one or more optical components can be calibrated based on the identified performance trends.

[0016] In some embodiments, the TIS device may include a sensor configured to measure a raw pulse signal of a light beam. In some embodiments, the TIS device may further include a processor coupled to the sensor. In some embodiments, the processor may be configured to square the raw pulse signal and transform it to the time domain to measure the TIS pulse width. In some embodiments, the processor may be configured to calculate the SC based on the measured TIS pulse width.

[0017] In some embodiments, the light source device may further include an optical pulse stretcher. In some embodiments, the optical pulse stretcher may be configured to adjust the TIS pulse width.

[0018] In some embodiments, the light source device may further include a controller coupled to the TIS device. In some embodiments, the controller may be configured to control the SC. In some embodiments, the controller may be configured to adjust one or more actuators of the light source device corresponding to one or more parameters of the SC. In some embodiments, the controller may include a closed-loop feedback algorithm. In some embodiments, the closed-loop feedback algorithm may be configured to minimize the SC. In some embodiments, the closed-loop feedback algorithm may be configured to achieve or maintain a desired SC. In some embodiments, the controller may be configured to perform data mining and / or machine learning based on the time-varying TIS pulse width. In some embodiments, data mining and / or machine learning may be used to identify the optimal maintenance schedule for the light source device.

[0019] In some embodiments, the TIS device may be an in-line passive device and integrated into the optical path of the beam.

[0020] In some embodiments, the light source device may further include a database coupled to the TIS device. In some embodiments, the database may be configured to store time-varying TIS pulse widths and SCs. In some embodiments, the database may be integrated with pulse data of the light source device.

[0021] In some embodiments, a Time Integral Square (TIS) device may include a sensor and a processor coupled to the sensor. In some embodiments, the TIS device may be configured to calculate the speckle contrast (SC) of a light beam. In some embodiments, the sensor may be configured to measure the raw pulse signal of the light beam. In some embodiments, the processor may be configured to square the raw pulse signal and transform it to the time domain to measure the TIS pulse width of the light beam. In some embodiments, the TIS pulse width is measured in real time or near real time. In some embodiments, the measured TIS pulse width may be used to adjust one or more actuators or control algorithms of a light source associated with the SC.

[0022] In some embodiments, the processor may be configured to calculate the SC of the beam based on the measured TIS pulse width. In some embodiments, the SC may be calculated in real time. In some embodiments, the SC may be calculated in near real time.

[0023] In some embodiments, the TIS pulse width can be measured in real time within 1 millisecond. In some embodiments, the TIS pulse width can be measured in real time within 0.1 milliseconds.

[0024] In some embodiments, the TIS device may be an in-line passive device and integrated into the optical path of the beam.

[0025] In some embodiments, a method for measuring the speckle contrast (SC) of a light beam from a light source may include measuring the time integral square (TIS) pulse width of the beam in the time domain. In some embodiments, the TIS pulse width is measured in real time or near real time. In some embodiments, the method may further include calculating the SC of the beam based on the measured TIS pulse width. In some embodiments, the method may further include adjusting one or more parameters of the SC based on the calculated SC to reduce errors in the photolithography process.

[0026] In some embodiments, the method may further include measuring the wavelength (λ), bandwidth (BW), and cross-sectional area (A) of the light beam. beam ) and the beam divergence angle (Ω) of the beam divIn some embodiments, the method may further include performing a diagnostic of the light source based on the TIS pulse width measured over time.

[0027] In some embodiments, the method may further include real-time control (SC). In some embodiments, the method may further include near real-time control (SC). In some embodiments, controlling the SC may include one or more actuators that adjust one or more parameters of the light source corresponding to the SC. In some embodiments, controlling the SC may include a control algorithm that adjusts one or more parameters of the light source corresponding to the SC.

[0028] In some embodiments, a measurement and measurement apparatus may include an automatic shutter device, an optical measurement device, and a time integral square (TIS) device. In some embodiments, the automatic shutter device may be configured to guide a portion of a light beam. In some embodiments, the optical measurement device may be configured to measure one or more parameters of the light beam. In some embodiments, the time integral square (TIS) device may be configured to calculate the speckle contrast (SC) of the light beam based on the time integral square (TIS) pulse width of the light beam measured in the time domain. In some embodiments, the time integral square (TIS) pulse width is measured in real time or near real time.

[0029] In some embodiments, the measured time integral squared (TIS) pulse width can be used to adjust one or more actuators or control algorithms of the light source associated with the speckle contrast (SC). In some embodiments, the calculated speckle contrast (SC) can be provided to a lithography apparatus to reduce errors during the lithography process. In some embodiments, the speckle contrast (SC) can be calculated in real time or near real time.

[0030] In some embodiments, one or more parameters of the light beam may include wavelength, bandwidth, cross-sectional area, beam divergence angle, or combinations thereof. In some embodiments, the optical measurement device may include a beam sensor, a power sensor, a spectrometer, a beam expander, or combinations thereof.

[0031] In some embodiments, the automatic shutter device may include a beam splitter configured to passively isolate a portion of the light beam. In some embodiments, the automatic shutter device may include a modulator configured to guide said portion of the light beam at a specific time.

[0032] In some embodiments, the measurement and measurement apparatus may further include a database. In some embodiments, the database may be coupled to an optical measurement apparatus, a time integral square (TIS) apparatus, or both. In some embodiments, the database may be configured to store one or more measurements from the optical measurement apparatus, the time integral square (TIS) apparatus, or both. In some embodiments, one or more measurements may include wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width, SC, or combinations thereof.

[0033] Implementations of any of the above-described technologies may include DUV light sources, systems, methods, processes, apparatuses, and / or devices. Details of one or more implementations are set forth in the accompanying drawings and the description below. Other features will become apparent from the description and drawings, as well as from the claims.

[0034] Further features and exemplary aspects of the embodiments, as well as the structures and operations of various embodiments, are described in detail below with reference to the accompanying drawings. It should be noted that the embodiments are not limited to the specific embodiments described herein. These embodiments are presented herein for illustrative purposes only. Further embodiments will be apparent to those skilled in the art based on the teachings contained herein. Attached Figure Description

[0035] The accompanying drawings are incorporated herein by reference and form part of the specification, illustrating embodiments and, together with the description, further serving to explain the principles of the embodiments and to enable those skilled in the art to make and use the embodiments.

[0036] Figure 1A This is a schematic illustration of a reflective lithography apparatus according to an exemplary embodiment.

[0037] Figure 1B This is a schematic illustration of a transmission lithography apparatus according to an exemplary embodiment.

[0038] Figure 2 This is a schematic illustration of a light source device according to an exemplary embodiment.

[0039] Figure 3 yes Figure 2 The schematic illustration of the measurement and measurement module shown is based on an exemplary embodiment.

[0040] Figure 4 This is a schematic perspective view of a TIS device according to an exemplary embodiment.

[0041] Figure 5 A flowchart of a light source device according to an exemplary embodiment is shown.

[0042] The features and exemplary aspects of the embodiments will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which the same reference numerals identify corresponding elements throughout. In the drawings, the same reference numerals generally indicate identical, functionally similar, and / or structurally similar elements. Furthermore, generally, the leftmost numeral of the reference numerals identifies the drawing in which that reference numeral first appears. Unless otherwise stated, the drawings provided throughout this disclosure should not be construed as being drawn to scale. Detailed Implementation

[0043] This specification discloses one or more embodiments incorporating features of the present invention. The disclosed embodiments are merely examples of the invention. The scope of the invention is not limited to the disclosed embodiments. The invention is defined by the appended claims.

[0044] The described embodiments and references in the specification to "an embodiment," "an example embodiment," "an exemplary embodiment," etc., indicate that the described embodiments may include specific features, structures, or characteristics, but each embodiment is not necessarily required to include that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, it should be understood that, to the knowledge of those skilled in the art, that feature, structure, or characteristic can be implemented in conjunction with other embodiments, whether explicitly described or not.

[0045] Spatial relative terms, such as “below,” “under,” “lower,” “above,” “upper,” “upper,” etc., may be used herein for descriptive purposes to describe the relationship between one element or feature and another element(s)(s) shown in the figure. Spatial relative terms are intended to cover different orientations of the device in use or operation other than those depicted in the figure. The device may be oriented in other ways (rotated 90 degrees or otherwise), and the spatial relative descriptors used herein may be interpreted accordingly.

[0046] As used herein, the terms “about,” “substantially,” or “approximately” indicate that the value of a given quantity may vary depending on a particular technique. Based on a particular technique, the terms “about,” “substantially,” or “approximately” may indicate that the value of a given quantity varies within, for example, 1-15% of that value (e.g., ±1%, ±2%, ±5%, ±10%, or ±15% of that value).

[0047] Numerical values, including the endpoints of a range, may be represented herein as approximate values ​​preceded by terms such as “about,” “substantially,” or “approximately.” In this case, other embodiments include specific numerical values. Regardless of whether the numerical value is represented as an approximation, both embodiments are included in this disclosure: one is represented as an approximation, and the other is not. It will be further understood that each endpoint of a range is significant relative to and independent of the other endpoint.

[0048] Embodiments of this disclosure can be implemented in hardware, firmware, software, or any combination thereof. Embodiments of this disclosure can also be implemented as instructions stored on a machine-readable medium that can be read and executed by one or more processors. A machine-readable medium can include any mechanism for storing or transmitting information in a machine-readable (e.g., computing device) form. For example, a machine-readable medium can include read-only memory (ROM); random access memory (RAM); disk storage media; optical storage media; flash memory devices; electrical, optical, acoustic, or other forms of propagation signals (e.g., carrier waves, infrared signals, digital signals, etc.). Furthermore, firmware, software, routines, and / or instructions can be described herein as performing certain actions. However, it should be understood that such descriptions are merely for convenience, and such actions are actually generated by a computing device, processor, controller, or other means executing the firmware, software, routines, instructions, etc.

[0049] As used herein, the terms "time-integral squared (TIS) pulse width," "TIS pulse width," or "TIS value" refer to the time or duration (e.g., nanoseconds) during which a laser pulse encompasses the total energy of the laser pulse in the time domain. The TIS pulse width is a parameter of the speckle contrast (SC) of a laser beam.

[0050] As used herein, the term "speckle contrast (SC)" or "SC" or "SC value" refers to a numerical measure of the variation in local illumination intensity across a speckle pattern. For example, this numerical measure could be the intensity difference between bright and dark spots in a speckle pattern, e.g., for a specific region of the speckle pattern. In some embodiments, SC can be defined as the standard deviation of the intensity variation divided by the average intensity. The range is from 0 to 1 (e.g., percentage). In some embodiments, SC can be defined by the following equation: Speckle contrast (SC) = Where TIS is the TIS pulse width in the time domain, λ is the wavelength of the beam, c is the speed of light, BW is the bandwidth of the beam, and A... beam It is the cross-sectional area of ​​the light beam, Ω div It is the beam divergence angle of the beam.

[0051] As used herein, the terms "real-time" or "real-time" mean a guarantee of responding to one or more operations or other processes without delay within a specified time. In some embodiments, real-time may include a timescale or response within one millisecond (ms). In some embodiments, real-time may include a timescale or response within 0.1 ms. In some embodiments, real-time may include a timescale or response within the reaction time or capability of one or more actuators of a light source device (e.g., a linear motor, servo motor, stepper motor, shutter, electro-optic modulator, acousto-optic modulator, etc.).

[0052] As used herein, the term "near real-time" or "near real-time" means that there is a guarantee of responding to one or more operations or other processes within a specified time after deducting processing time (e.g., electronic communication, automated data processing) without significant delay. Near real-time is slightly slower than real-time or has a delay. In some embodiments, near real-time may include a timescale or response in the range of 10 milliseconds to 100 milliseconds. In some embodiments, near real-time may include a timescale or response in the range of 100 milliseconds to 1 second. In some embodiments, near real-time may include a timescale or response in the range of 1 second to 10 seconds.

[0053] As used herein, the term “E95 bandwidth” or “E95” refers to the beam spectral bandwidth that contains 95% of the total pulse energy of the beam.

[0054] As used herein, the term "maintenance plan" refers to planned or scheduled maintenance of one or more components of a light source, such as, but not limited to, adjustment, recalibration, repair, replacement, and / or bulk replacement of one or more components of the light source.

[0055] However, it is beneficial to introduce example environments in which embodiments of this disclosure may be implemented before describing these embodiments in more detail.

[0056] Exemplary lithography system

[0057] Figure 1A and Figure 1BThese are schematic illustrations of lithography apparatus 100 and 100', respectively, in which embodiments of the present disclosure can be implemented. Lithography apparatus 100 and 100' each include an irradiation system (irradiator) IL configured to modulate a radiation beam B (e.g., deep ultraviolet (DUV) radiation); a support structure (e.g., a mask stage) MT configured to support a patterning device (e.g., a mask, a photomask, or a dynamic patterning device) MA and connected to a first positioner PM configured to precisely position the patterning device MA; and a substrate stage (e.g., a wafer stage) WT configured to hold a substrate (e.g., a wafer coated with photoresist) W and connected to a second positioner PW configured to precisely position the substrate W. Lithography apparatuses 100 and 100' also have a projection system PS configured to project a pattern imparted by the radiation beam B by the patterning device MA onto a target portion (e.g., comprising one or more dies) C of the substrate W. In lithography apparatus 100, the patterning device MA and the projection system PS are reflective. In the photolithography apparatus 100', the patterning apparatus MA and the projection system PS are transmissive.

[0058] The irradiation system IL may include various types of optical components, such as refractive, reflective, catadioptric, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for guiding, shaping or controlling the radiation beam B.

[0059] The support structure MT holds the patterning device MA in a manner dependent on the orientation of the patterning device MA relative to a reference frame, the design of at least one lithography device 100 and 100', and other conditions (e.g., whether the patterning device MA is held in a vacuum environment). The support structure MT can use mechanical, vacuum, electrostatic, or other clamping techniques to hold the patterning device MA. The support structure MT can be a frame or stage, and may be fixed or movable as needed. By using sensors, the support structure MT can ensure that the patterning device MA is in a desired position, e.g., relative to the projection system PS.

[0060] The term "patterning device" MA should be interpreted broadly to refer to any device that can be used to impart a pattern to the radiation beam B in its cross-section in order to create a pattern in a target portion C of the substrate W. The pattern imparted to the radiation beam B can correspond to a specific functional layer in the device created in the target portion C to form an integrated circuit.

[0061] The patterning device MA can be reflective (e.g., Figure 1A In the photolithography apparatus 100) or transmission type (such as... Figure 1B(In the photolithography apparatus 100'). Examples of patterning apparatus MA include photomasks, masks, programmable mirror arrays, or programmable LCD panels. Masks are well known in photolithography and include mask types such as binary, alternating phase-shift, or attenuation phase-shift masks, as well as various hybrid mask types. Examples of programmable mirror arrays employ a small matrix arrangement, where each small mirror can be tilted individually to reflect the incident radiation beam in different directions. The tilted mirrors impart a pattern to the radiation beam B reflected by the small matrix.

[0062] The term "projection system" PS can encompass any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic, and electrostatic optical systems, or any combination thereof, depending on the exposure radiation used or other factors (e.g., the use of an immersion liquid on the substrate W or the use of a vacuum). For DUV or electron beam radiation, a vacuum environment can be used because other gases may absorb excessive radiation or electrons. Therefore, a vacuum environment can be provided throughout the beam path by means of vacuum walls and vacuum pumps. In some aspects, for DUV radiation, a clean or inert environment (e.g., a N2 gas clean environment) can be used. In some aspects, one or more modules along the DUV radiation beam path can be maintained in a vacuum and / or clean environment.

[0063] The lithography apparatus 100 and / or lithography apparatus 100' can be of the type having two (dual) or more substrate stages WT (and / or two or more mask stages). In such a "multi-stage" machine, additional substrate stages WT can be used in parallel, or preparation steps can be performed on one or more stages while one or more other substrate stages WT are being used for exposure. In some cases, the additional stage may not be a substrate stage WT.

[0064] Photolithography apparatuses can also be of the type in which at least a portion of the substrate can be covered by a liquid (e.g., water) with a relatively high refractive index to fill the space between the projection system and the substrate. Immersion liquids can also be applied to other spaces in the photolithography apparatus, such as between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of a projection system. As used herein, the term “immersion” does not mean that a structure such as the substrate must be submerged in the liquid, but only that the liquid is located between the projection system and the substrate during exposure.

[0065] Reference Figure 1A and Figure 1BThe irradiator IL receives the radiation beam from the radiation source SO. The radiation source SO and the lithography apparatus 100, 100' can be separate physical entities, for example, when the radiation source SO is an excimer laser (e.g., a master oscillator power amplifier (MOPA) or a master oscillator power ring amplifier (MOPRA)). In this case, the radiation source SO is not considered part of forming the lithography apparatus 100 or 100', and the radiation beam B is delivered by means of the beam delivery system BD (in... Figure 1B (In the middle) From the radiation source SO to the irradiator IL, the beam delivery system BD includes, for example, a suitable guide mirror and / or beam expander. In other cases, the radiation source SO may be a component of the lithography apparatus 100, 100', for example, when the radiation source SO is a mercury lamp. The radiation source SO and the irradiator IL, together with the beam delivery system BD (if desired), may be referred to as the radiation system.

[0066] The irradiator IL may include an adjuster AD for adjusting the angular intensity distribution of the radiation beam (in Figure 1B (In the middle). Typically, at least the outer radial range and / or inner radial range (often referred to as "σ-outer" and "σ-inner", respectively) of the intensity distribution in the irradiator pupil plane can be adjusted. Furthermore, the irradiator IL may include various other components (in... Figure 1B (In the middle), for example, the integrator IN and the concentrator CO. The irradiator IL can be used to adjust the radiation beam B to have the desired uniformity and intensity distribution in its cross-section.

[0067] Reference Figure 1A A radiation beam B is incident on a patterning device (e.g., a mask) MA, which is held on a support structure (e.g., a mask stage) MT, and the radiation beam B is patterned by the patterning device MA. In the lithography apparatus 100, the radiation beam B is reflected from the patterning device (e.g., the mask) MA. After being reflected from the patterning device (e.g., the mask) MA, the radiation beam B passes through a projection system PS, which focuses the radiation beam B onto a target portion C of the substrate W. The substrate stage WT can be precisely moved (e.g., to position different target portions C in the path of the radiation beam B) by means of a second locator PW and a position sensor IF2 (e.g., an interferometer, a linear encoder, or a capacitive sensor). Similarly, a first locator PM and another position sensor IF1 can be used to precisely position the patterning device (e.g., the mask) MA relative to the path of the radiation beam B. The patterning device (e.g., the mask) MA and the substrate W can be aligned using first and second mask alignment marks M1, M2 and first and second substrate alignment marks P1, P2, respectively.

[0068] Reference Figure 1BA radiation beam B is incident on a patterning device (e.g., a mask) MA, which is held on a support structure (e.g., a mask stage) MT and patterned by the patterning device MA. After passing through the patterning device MA, the radiation beam B passes through a projection system PS, which focuses the beam onto a target portion C of the substrate W. The projection system PS has a pupil conjugate surface PPU that is conjugate to the illumination system pupil IPU. The radiated portion emanates from the intensity distribution at the illumination system pupil IPU, passes through the mask pattern MP without being affected by diffraction at the mask pattern MP, and creates an image MP' of the intensity distribution at the pupil conjugate surface PPU.

[0069] The projection system PS projects an image MP' of a mask pattern MP onto a photoresist layer coated on a substrate W, wherein the image MP' is formed by a diffracted beam generated at the mask pattern MP from radiation of intensity distribution. For example, the mask pattern MP may comprise an array of lines and spacings. The radiation diffracts at the array, producing a diffracted beam that is deflected differently from zero-order diffraction, its direction changing in a direction perpendicular to the lines. The undiffracted beam (i.e., the so-called zero-order diffracted beam) passes through the pattern without any change in direction. The zero-order diffracted beam passes through the upper lens or upper lens group L1 of the projection system PS (upstream of the pupil conjugate surface PPU of the projection system PS) to reach the pupil conjugate surface PPU. The portion of the intensity distribution in the plane of the pupil conjugate surface PPU associated with the zero-order diffracted beam is an image of the intensity distribution in the illumination system pupil IPU of the illumination system IL. The aperture device PD is, for example, disposed at or substantially at the plane comprising the pupil conjugate surface PPU of the projection system PS.

[0070] The projection system PS is arranged to capture not only the zeroth-order diffraction beam, but also the first-order or higher-order diffraction beams (not shown) by means of an upper lens group L1 and a lower lens group L2. In some embodiments, dipole illumination for imaging a line pattern extending in a direction perpendicular to the line can be used to take advantage of the resolution enhancement effect of dipole illumination. For example, the first-order diffraction beam interferes with the corresponding zero-order diffraction beam at the wafer level W to create an image MP' of the mask pattern (line pattern) MP at the highest possible resolution and process window (i.e., the combination of available depth of focus and tolerable exposure dose deviation). In some embodiments, astigmatism can be reduced by providing radiating poles (not shown) in the opposing quadrants of the illumination system pupil IPU. For example, illumination at the illumination system pupil IPU can use only two opposing illumination quadrants (sometimes referred to as BMW illumination), such that the remaining two quadrants are not used for illumination but are configured to capture the first-order diffraction beam. Furthermore, in some embodiments, astigmatism can be reduced by blocking the zero-order beam in the pupil conjugate surface PPU of the projection system PS associated with the radiating pole in the corresponding object limit.

[0071] With the aid of a second positioner PW and a position sensor IF (e.g., an interferometric device, a linear encoder, or a capacitive sensor), the substrate stage WT can be precisely moved (e.g., to position different target portions C within the path of the radiation beam B). Similarly, the first positioner PM and another position sensor (in... Figure 1B (Not shown) can be used to precisely position the patterning device (mask) MA relative to the path of the radiation beam B (e.g., after mechanical retrieval from a mask library or during scanning).

[0072] Typically, the movement of the mask stage MT can be achieved using long-stroke modules (coarse positioning) and short-stroke modules (fine positioning), which form part of the first positioner PM. Similarly, the movement of the substrate stage WT can be achieved using long-stroke modules and short-stroke modules, which form part of the second positioner PW. In the case of a stepper (relative to a scanner), the mask stage MT can be connected only to the short-stroke actuator, or it can be fixed. The patterning device (mask) MA and the substrate W can be aligned using first and second mask alignment marks M1, M2 and first and second substrate alignment marks P1, P2, respectively. Although the substrate alignment marks (as shown) occupy dedicated target portions, they can be located in the space between the target portions (called scribe line alignment marks). Similarly, when more than one die is provided on the patterning device (mask) MA, the mask alignment marks can be located between the dies.

[0073] The mask stage MT and patterning device MA can be located within a vacuum chamber V, where an in-vacuum robot IVR can be used to move the patterning device (e.g., a mask) into and out of the vacuum chamber V. Alternatively, when the mask stage MT and patterning device MA are outside the vacuum chamber V, an out-of-vacuum robot (not shown) can be used for various transport operations, similar to the in-vacuum robot IVR. Both the in-vacuum robot IVR and the out-of-vacuum robot require calibration to smoothly transfer any payload (e.g., a mask) to a fixed kinematic support at the transport station.

[0074] The photolithography apparatuses 100 and 100' can be used in at least one of the following modes:

[0075] 1. In step mode, the support structure (e.g., mask stage) MT and substrate stage WT remain substantially stationary while the entire pattern imparting the radiation beam B is projected onto the target portion C in a single exposure (i.e., a single static exposure). The substrate stage WT is then shifted along the X and / or Y directions, allowing different target portions C to be exposed.

[0076] 2. In scanning mode, the support structure (e.g., mask stage) MT and the substrate stage WT are scanned simultaneously, while a pattern imparted to the radiation beam B is projected onto the target portion C (i.e., single dynamic exposure). The velocity and direction of the substrate stage WT relative to the support structure (e.g., mask stage) MT can be determined by the (reduced) magnification and image inversion characteristics of the projection system PS.

[0077] 3. In another mode, the support structure (e.g., mask stage) MT remains substantially stationary, holding the programmable patterning device, and moves or scans the substrate stage WT as the pattern imparted by the radiation beam B is projected onto the target portion C. A pulsed radiation source SO can be employed, and the programmable patterning device is updated as needed after each movement of the substrate stage WT or between consecutive radiation pulses during scanning. This mode of operation can be readily applied to maskless lithography utilizing programmable patterning devices (e.g., programmable mirror arrays).

[0078] Alternatively, combinations and / or variations of the described usage patterns, or entirely different usage patterns, may be used.

[0079] In a further embodiment, the lithography apparatus 100 includes an extreme ultraviolet (EUV) source configured to generate an EUV radiation beam for EUV lithography. A relative vacuum can be provided in the radiation source SO, the irradiation system IL, and / or the projection system PS, i.e., a small amount of gas (e.g., hydrogen) is at a pressure well below atmospheric pressure. The radiation source SO can be a laser-generated plasma (LPP) source, a discharge-generated plasma (DPP) source, a free-electron laser (FEL), an excimer laser, a master oscillator power amplifier (MOPA), a master oscillator power ring amplifier (MOPRA), or any other radiation source capable of generating DUV radiation.

[0080] Exemplary light source device

[0081] As described above, a master oscillator power amplifier (MOPA) or master oscillator power ring amplifier (MOPRA) is a two-stage optical resonator arrangement. The master oscillator (MO) (e.g., a first optical resonator stage) generates a highly coherent beam. The power amplifier (PA) or power ring amplifier (PRA) (e.g., a second optical resonator stage) increases the optical power of the beam while maintaining its characteristics. The MO may include a gas discharge chamber, an optical coupler (OC), a linewidth narrowing module (LNM), and a line center analysis module (LAM). The OC and LNM may surround the gas discharge chamber to form an optical resonator. The MO may be optically coupled to a wavefront engineering box (WEB) to send the generated beam to the PA or PRA. The PA or PRA may include a second gas discharge chamber, a second wavefront engineering box (WEB), and a beam reverser (BR). The WEB and BR may surround the second gas discharge chamber to form a second optical resonator. For example, certain MOPA and MOPRA have been previously described in U.S. Patent No. 7,643,528 (granted January 5, 2010), U.S. Patent No. 7,822,092 (granted October 26, 2010), and U.S. Application No. 18 / 020,718 (filed August 10, 2021), the entire contents of which are incorporated herein by reference.

[0082] The performance of a MOPA or MOPRA can critically depend on the MO, PA, and / or PRA, such as the optical windows and / or optical components of the output beam. Excimer lasers utilize excimers (e.g., stimulated dimers) or stimulated complexes (e.g., stimulated complexes) to output deep ultraviolet (DUV) radiation. An excimer is a short-lived homonuclear dimer molecule formed from two substances (e.g., Ar2, Kr2, F2, Xe2). A stimulated complex is a heteronuclear dimer molecule formed from more than two substances (e.g., ArF, KrCl, KrF, XeBr, XeCl, XeF). The electrodes surrounding the gas discharge medium (e.g., F2, ArF, KrF, and / or XeF) of the MO, PA, and / or PRA, and / or the optical components of the MOPA or MOPRA, degrade over time, leading to decreased laser performance and requiring laser maintenance.

[0083] Speckle is a laser phenomenon caused by the self-interference of coherent light, which can lead to random localized illumination inhomogeneities. Speckle contrast (SC) is a numerical measure of the variation in local illumination intensity across a speckle pattern; for example, the intensity difference between bright and dark spots in a specific region of the speckle pattern. SC is the standard deviation of the intensity variation divided by the average intensity. SC can be defined by the following equation: Speckle contrast (SC) = Where TIS is the time integral squared (TIS) pulse width in the time domain, λ is the wavelength of the beam, c is the speed of light, BW is the bandwidth of the beam, and A... beam It is the cross-sectional area of ​​the light beam, Ω div It is the beam divergence angle of the laser beam. Non-uniformity of laser beam irradiation can lead to non-uniform patterning and errors in the photolithography process, such as, but not limited to, linewidth roughness (LWR), line edge roughness (LER), edge placement error (EPE), critical dimension (CD) error, and critical dimension (CD) non-uniformity.

[0084] A key parameter of SC (Signal Scale) is the time integral squared (TIS) pulse width of the laser beam. The TIS pulse width is the time or duration of the laser pulse that encompasses its total energy in the time domain. The SC of the beam can be calculated by measuring the TIS pulse width along with other beam parameters (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle). Furthermore, the TIS pulse width can be adjusted to change (e.g., decrease) the SC, for example, using an optical pulse stretcher. For instance, since SC is inversely proportional to the TIS pulse width, SC... Optical pulse stretchers can increase the TIS pulse width (e.g., from 200ns to 400ns), thereby reducing SC.

[0085] However, the current system does not monitor the TIS pulse width, and therefore does not measure the beam SC over time. Furthermore, the current system does not control and / or optimize the SC over time, for example in real time, to reduce errors in the lithography process, perform source diagnostics, increase laser stability, and / or identify optimal maintenance schedules for the source.

[0086] Embodiments of the light source apparatus, system, and method discussed below can measure the TIS pulse width in real time or near real time, calculate the SC in real time or near real time, adjust one or more parameters of the SC (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle) to control the SC (e.g., in real time), reduce errors in the lithography process (e.g., LWR, LER, CD error, CD non-uniformity, or combinations thereof), perform diagnostics on the light source apparatus, identify optimal maintenance plans for the light source apparatus, and increase the lifespan of the master oscillator, power amplifier, and / or power ring amplifier.

[0087] Figure 2A light source device 200 according to various exemplary embodiments is illustrated. The light source device 200 may be configured to provide a highly coherent and aligned light beam (e.g., beam 250), for example, to a DUV lithography apparatus (e.g., lithography apparatus 100'). The light source device 200 may be further configured to measure the TIS pulse width of the beam 250 in real-time or near real-time and calculate the SC of the beam 250. The light source device 200 may be further configured to adjust one or more parameters of the SC (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width) to control and / or optimize the SC (e.g., in real-time). The light source device 200 may be further configured to reduce errors in the lithography process (e.g., LWR, LER, CD error, CD non-uniformity, or combinations thereof), perform diagnostics on the light source device 200, identify optimal maintenance plans for the light source device 200, and increase the lifespan of the master oscillator, power amplifier, and / or power ring amplifier of the light source device 200.

[0088] Although the light source device 200 is in Figure 2 While shown as a standalone device and / or system, embodiments of this disclosure can be used with other optical systems, such as, but not limited to, radiation source SO, lithography apparatus 100, 100', and / or other optical systems. In some embodiments, light source device 200 can provide an excimer laser beam (e.g., DUV radiation), for example, provided to a DUV lithography apparatus. In some embodiments, light source device 200 can be radiation source SO in lithography apparatus 100, 100'. For example, DUV radiation beam B can be beam 250. In some embodiments, light source device 200 can be MOPA or MOPRA formed by MO subsystem 210 (e.g., a first gas discharge stage) and PRA subsystem 230 (e.g., a second gas discharge stage). As noted above, certain MOPA and MOPRA have been previously described, for example, in U.S. Patent No. 7,643,528 (granted January 5, 2010) and U.S. Patent No. 7,822,092 (granted October 26, 2010) and U.S. Application No. 18 / 020,718 (filed August 10, 2021), the entire contents of which are incorporated herein by reference.

[0089] like Figure 2As shown, the light source device 200 may include a master oscillator (MO) subsystem 210, a relay optics subsystem 220, a power ring amplifier (PRA) subsystem 230, a laser output subsystem 240, and a controller 260. In some embodiments, the light source device 200 may be a pulsed laser source that generates a pulsed laser beam (e.g., beam 250). In some embodiments, all the components listed above may be housed in a three-dimensional (3D) frame. For example, the 3D frame may include metal (e.g., aluminum, steel, etc.), ceramic, and / or any other suitable rigid material.

[0090] MO subsystem 210 can be configured to output a highly coherent beam (e.g., beam 211). MO subsystem 210 can be further configured to act as a solid-state or gas discharge seed laser. MO subsystem 210 can be further configured to output amplified spontaneous emission (ASE) and / or beam 211. MO subsystem 210 may include a linewidth narrowing module (LNM) 212, a gas discharge chamber 214, an optical coupler 216, and a line center analysis module (LAM) 218. Figure 2 As shown, the MO subsystem 210 generates ASE and / or beams in an optical resonant cavity formed by the LNM 212, the gas discharge chamber 214, the optical coupler 216, and the LAM 218, as indicated by bidirectional arrows, and outputs beam 211, as indicated by unidirectional arrows, which will be obvious to those skilled in the art.

[0091] LNM 212 can be configured to control the linewidth of the generated beam (e.g., beam 211). In some embodiments, LNM 212 may include a reflective grating. In some embodiments, LNM 212 may include a beam expander (e.g., a prism beam expander) and an adjustable reflective grating (e.g., via a piezoelectric actuator) to reflect selected (narrower) portions of a wider spectrum of beam 211 back into the gas discharge chamber 214 for amplification, thereby tuning beam 211 (e.g., adjusting wavelength and bandwidth).

[0092] Gas discharge chamber 214 can be configured to generate a seed laser and output a beam (e.g., beam 211). Gas discharge chamber 214 (e.g., MO discharge chamber) can be further configured to receive discharges (e.g., voltage pulses) between electrodes (e.g., via voltage control system 215a), thereby inducing a laser gas discharge in the gas discharge medium (e.g., a laser gas, including F2, ArF, KrF, and / or XeF) to create a reverse population of high-energy molecules (e.g., stimulated dimers, stimulated complexes) to generate relatively broadband radiation (e.g., DUV radiation), which can be narrowed to a relatively narrow bandwidth and tuned to a selected center wavelength (e.g., via LNM 212). Gas discharge chamber 214 may include voltage control system 215a and pressure control system 215b.

[0093] Voltage control system 215a can be configured to apply high-voltage electrical pulses across electrodes in gas discharge chamber 214 to excite a gas discharge medium (e.g., F2, ArF, KrF, and / or XeF) to output ASE and / or a beam 211 (e.g., 193 nm). In some embodiments, voltage control system 215a may include a high-voltage power supply (not shown), a voltage compression amplifier (not shown), a pulse energy monitor (not shown), and / or a controller (e.g., controller 260) for providing high-voltage electrical pulses across electrodes. For example, voltage control systems have previously been described in U.S. Patent No. 6,240,117 (granted May 29, 2001), the entire contents of which are incorporated herein by reference.

[0094] The pressure control system 215b can be configured to control the concentration of a gas discharge medium (e.g., F2, ArF, KrF, and / or XeF) in the gas discharge chamber 214. In some embodiments, the pressure control system 215b may include a gas discharge line for supplying one or more gas components (e.g., Ar2, Kr2, F2, Xe2, ArF, KrCl, KrF, XeBr, XeCl, XeF, KrNe, etc.) of the gas discharge medium to the gas discharge chamber 214. In some embodiments, the pressure control system 215b may include a vacuum line for providing negative pressure (e.g., extraction) to a portion of the gas discharge medium in the gas discharge chamber 214, for example, during the injection of one or more gas components. In some embodiments, the pressure control system 215b may include one or more gas sources (not shown), one or more pressure regulators (not shown), a vacuum pump (not shown), and / or a controller (e.g., controller 260) for controlling the concentration of the gas discharge medium in the gas discharge chamber 214. For example, pressure control systems have previously been described in U.S. Patent No. 6,240,117 (granted May 29, 2001), the entire contents of which are incorporated herein by reference.

[0095] Optical coupler 216 can be configured to form an optical resonant cavity together with LNM 212 and gas discharge chamber 214, in which seed light (e.g., amplified spontaneous emission (ASE)) from gas discharge chamber 214 oscillates (reflects) back and forth to form a master oscillator (MO) and generate beam 211. In some embodiments, optical coupler 216 may include a partial mirror.

[0096] LAM 218 can be configured to analyze the line center of beam 211 and measure the wavelength of beam 211. In some embodiments, LAM 218 may include an etalon spectrometer for fine wavelength measurement and a grating spectrometer for coarse wavelength measurement.

[0097] The relay optics subsystem 220 can be configured to redirect beam 211 from MO subsystem 210 to PRA subsystem 230. The relay optics subsystem 220 may include a wavefront engineering box (WEB) 222. In some embodiments, WEB 222 may include beam expanding elements (e.g., a prism beam expander) to adjust the cross-sectional area of ​​beam 211. In some embodiments, WEB 222 may include coherence disrupting elements (e.g., an optical delay path) to adjust (e.g., enlarge) the phase space area of ​​beam 211. Figure 2 As shown, the relay optical subsystem 220 receives beam 211 from MO subsystem 210 and guides beam 211 to PRA subsystem 230 for further amplification, as indicated by a unidirectional arrow, which is obvious to those skilled in the art.

[0098] The PRA subsystem 230 can be configured to amplify the beam 211 from the MO subsystem 210 and output the amplified beam 231. The PRA subsystem 230 can be further configured to maximize the nominal operating wavelength of the beam 211 for a selected gas discharge medium (e.g., 193 nm for ArF). The PRA subsystem 230 may include a second wavefront engineering box (WEB) 232, a second gas discharge chamber 234, and a beam reverser (BR) 236. Figure 2 As shown, the PRA subsystem 230 amplifies the beam 211 received from the relay optical subsystem 220 in a second optical resonant cavity formed by the BR 236, the second gas discharge chamber 234, and the second WEB 232, as indicated by a bidirectional arrow, and outputs an amplified beam 231, as indicated by a unidirectional arrow, which will be obvious to those skilled in the art.

[0099] The second WEB 232 can be configured to guide the beam 211 from the MO subsystem 210 (via the relay optics subsystem 220) toward the second gas discharge chamber 234. The second WEB 232 can be further configured to form a second optical resonant cavity (gain medium) together with the second gas discharge chamber 234 and BR 236, in which the beam 211 oscillates (reflects) to form a power ring amplifier (PRA) and generate an amplified beam 231. In some embodiments, the second WEB 232 may include a partial mirror. In some embodiments, the second WEB 232 may include a beam expanding element (e.g., a prism beam expander) to adjust the cross-sectional area of ​​the amplified beam 231. In some embodiments, the second WEB 232 may include a coherence disrupting element (e.g., an optical delay path) to adjust (e.g., enlarge) the phase space area of ​​the amplified beam 231.

[0100] The second gas discharge chamber 234 can be configured to amplify beam 211 and output an amplified beam (e.g., amplified beam 231). The second gas discharge chamber 234 (e.g., a PRA discharge chamber) can be further configured to receive discharges (e.g., voltage pulses) between electrodes (e.g., via a voltage control system 235a), thereby inducing laser gas discharge in the gas discharge medium (e.g., a laser gas, including F2, ArF, KrF, and / or XeF) to create an inverted population of high-energy molecules (e.g., stimulated dimers, stimulated complexes) to generate relatively broadband radiation (e.g., DUV radiation). The second gas discharge chamber 234 may include a voltage control system 235a and a pressure control system 235b.

[0101] Voltage control system 235a can be configured to apply high-voltage electrical pulses across electrodes in the second gas discharge chamber 234 to excite a gas discharge medium (e.g., F2, ArF, KrF, and / or XeF) to output an amplified beam 231 (e.g., 193 nm). In some embodiments, voltage control system 235a may include a high-voltage power supply (not shown), a voltage compression amplifier (not shown), a pulse energy monitor (not shown), and / or a controller (e.g., controller 260) for providing high-voltage electrical pulses across electrodes. For example, voltage control systems have previously been described in U.S. Patent No. 6,240,117 (granted May 29, 2001), the entire contents of which are incorporated herein by reference.

[0102] The pressure control system 235b can be configured to control the concentration of a gaseous discharge medium (e.g., F2, ArF, KrF, and / or XeF) in the second gas discharge chamber 234. In some embodiments, the pressure control system 235b may include a gas discharge line for supplying one or more gaseous components (e.g., Ar2, Kr2, F2, Xe2, ArF, KrCl, KrF, XeBr, XeCl, XeF, KrNe, etc.) of the gaseous discharge medium to the second gas discharge chamber 234. In some embodiments, the pressure control system 235b may include a vacuum line for providing negative pressure (e.g., extraction) to a portion of the gaseous discharge medium in the second gas discharge chamber 234, for example, during the injection of one or more gaseous components. In some embodiments, the pressure control system 235b may include one or more gas sources (not shown), one or more pressure regulators (not shown), a vacuum pump (not shown), and / or a controller (e.g., controller 260) for controlling the concentration of the gaseous discharge medium in the second gas discharge chamber 234. For example, pressure control systems have previously been described in U.S. Patent No. 6,240,117 (granted May 29, 2001), the entire contents of which are incorporated herein by reference.

[0103] BR 236 can be configured to redirect beam 211 and / or amplify beam 231, causing it to return to the gain medium passing through the second gas discharge chamber 234. In some embodiments, BR 236 may include an adjustable mirror.

[0104] The laser output subsystem 240 can be configured to measure one or more parameters of the amplified beam 231 from the PRA subsystem 230. In some embodiments, the laser output subsystem 240 may be an in-line passive device and integrated into the optical path of the amplified beam 231 from the PRA subsystem 230. The laser output subsystem 240 may include a bandwidth analysis module (BAM) 242, an optical pulse stretcher (OPuS) 244, and a measurement module 300. Figure 2As shown, the laser output subsystem 240 receives the amplified beam 231 from the PRA subsystem 230 and guides the amplified beam 231 through the BAM 242, OPUS 244 and the measurement and measurement module 300 for further analysis and / or modification (e.g., pulse broadening), as indicated by a unidirectional arrow, and outputs the beam 250, as indicated by a final unidirectional arrow, which will be obvious to those skilled in the art.

[0105] BAM 242 can be configured to analyze the bandwidth of the amplified beam 231 from PRA subsystem 230. In some embodiments, BAM 242 can be configured to transfer (e.g., pick up) a portion of the amplified beam 231 for measurement purposes, such as measuring the bandwidth and / or pulse energy of the amplified beam 231.

[0106] OPuS 244 can be configured to control the pulse duration of the amplified beam 231. OPuS 244 can be further configured to adjust the TIS pulse width of the beam 250 (e.g., by pulse broadening the amplified beam 231 to increase the TIS pulse width and produce a broadened beam 245). In some embodiments, OPuS 244 can receive the amplified beam 231 and broaden it (e.g., by increasing the TIS pulse width) to produce a broadened beam 245.

[0107] The controller 260 can be configured to monitor and adjust one or more parameters (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width, SC, or combinations thereof) and / or one or more components of the light source device 200 (e.g., LNM212, WEB 222, second WEB 232, OPUS 244, measurement and measurement module 300, etc.). The controller 260 can be further configured to control the SC of the beam 250. The controller 260 can be further configured to adjust one or more actuators (e.g., linear motors, servo motors, piezoelectric devices, stepper motors, shutters, electro-optic modulators, acousto-optic modulators, etc.) of the light source device 200 corresponding to one or more parameters (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle) of the SC.

[0108] The controller 260 may include multiple connections to various components of the light source device 200, such as a first connection 261 (e.g., electrically, mechanically, and / or optically coupled to the MO subsystem 210, such as LNM 212), a second connection 262 (e.g., electrically, mechanically, and / or optically coupled to the relay optical subsystem 220, such as WEB 222), a third connection 263 (e.g., electrically, mechanically, and / or optically coupled to the PRA subsystem 230, such as the second WEB 232), a fourth connection 264 (e.g., electrically, mechanically, and / or optically coupled to the laser output subsystem 240, such as OPUS 244), and a fifth connection 265 (e.g., electrically, mechanically, and / or optically coupled to the measurement and measurement module 300).

[0109] In some embodiments, controller 260 may include a closed-loop feedback algorithm configured to minimize the SC of beam 250. For example, the closed-loop feedback algorithm may (e.g., in real time) measure different parameters of the SC (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width), calculate the resulting SC value, and then automatically adjust (e.g., by adjusting one or more actuators in the light source device 200) one or more of the measured parameters to minimize the SC value.

[0110] In some embodiments, controller 260 may include a closed-loop feedback algorithm configured to achieve or maintain a desired SC of beam 250. For example, the closed-loop feedback algorithm may (e.g., in real time) measure different parameters of the SC (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width), calculate the resulting SC value, and then automatically adjust (e.g., by adjusting one or more actuators in the light source device 200) one or more of the measured parameters to achieve or maintain the desired SC value.

[0111] In some embodiments, the controller 260 may be configured to perform data mining on TIS values ​​measured over time and / or calculated SC values ​​to identify the optimal maintenance schedule for the light source device 200. For example, data mining may identify one or more performance trends (e.g., changes over time) of one or more optical components of the light source device 200 (e.g., LNM 212, WEB 222, second WEB 232, OPUS 244, etc.) and schedule and / or perform one or more corrections on the identified optical components based on the identified performance trends.

[0112] In some embodiments, controller 260 may be configured to perform machine learning on time-measured TIS values ​​and / or calculated SC values ​​to identify the optimal maintenance schedule for light source device 200. For example, machine learning may identify one or more performance trends (e.g., changes over time) of one or more optical components of light source device 200 (e.g., LNM 212, WEB 222, second WEB 232, OPUS 244, etc.) and schedule and / or perform one or more corrections on the identified optical components based on the identified performance trends. In some embodiments, the machine learning of controller 260 may include simulated annealing, gradient descent, finite difference, interpolation, population model, regression, parameter adaptation, supervised machine learning, unsupervised machine learning, neural networks, classification models, clustering, vector quantization, stochastic gradient descent, implicit update, leaky averaging, momentum method, adaptive gradient (AdaGrad), backpropagation, root mean square propagation (RMSProp), adaptive moment estimation (Adam), or combinations thereof.

[0113] Exemplary Measurement and Measurement Module

[0114] Figure 3 Measurement and measurement module 300 according to various exemplary embodiments is illustrated. Measurement and measurement module 300 can be configured to passively measure one or more parameters of a light beam (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width, SC, or combinations thereof) in real-time or near real-time. Measurement and measurement module 300 can be further configured to transmit the measured one or more parameters of the light beam (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width, SC, or combinations thereof) to a controller, for example, to form a feedback loop (e.g., a closed-loop feedback algorithm). Measurement and measurement module 300 can be further configured to monitor and store one or more parameters of the light beam (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width, SC, or combinations thereof) in a database (e.g., an online database), for example, for data mining and / or machine learning applications. Although measurement and measurement module 300 in Figure 3 While shown as a standalone device and / or system, embodiments of this disclosure may be used in conjunction with other optical systems, such as, but not limited to, radiation sources, lithography apparatuses, light source devices, and / or other optical systems. In some embodiments, the measurement and measurement module 300 may include an optical measurement device, an automatic shutter, and a TIS measurement device.

[0115] like Figure 3As shown, the measurement module 300 may include a laser input 302, a laser output 304, a beam splitter 310, a beam sensor 320, a power sensor 330, a database 350, and a TIS device 400. In some embodiments, the measurement module 300 may receive the laser input 302 (e.g., a broadened beam), transmit the laser output 304 (e.g., a beam), and receive a portion of the laser input 302 through the beam splitter 310 (e.g., a dichroic mirror) for online passive measurement of one or more parameters of the laser input 302 (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width, SC, or a combination thereof).

[0116] Beam splitter 310 can be configured to passively isolate a portion of laser input 302. In some aspects, beam splitter 310 may include an optical automatic shutter (e.g., an electro-optic modulator) to detect a portion of laser input 302 at a specific time. For example, the optical automatic shutter (e.g., with a partial mirror) can remain open until a measurement of laser input 302 is performed.

[0117] The beam sensor 320 can be configured to measure one or more parameters of the laser input 302, such as the wavelength, bandwidth, cross-sectional area, and beam divergence angle of the laser input 302 (e.g., a laser beam). In some embodiments, the beam sensor 320 may include one or more spectrometers (e.g., etalon spectrometers, grating spectrometers, etc.), one or more beam expanders (e.g., prism beam expanders, etc.), one or more photodetectors (e.g., photodiodes, APDs, CCDs, CMOS, PMTs, etc.), or combinations thereof, to measure the wavelength (e.g., 193 nm), bandwidth (e.g., E95 bandwidth), and cross-sectional area (e.g., 1 mm²) of the laser input 302 (e.g., a laser beam). 2 The measurement and measurement module 300 may include one or more optical components (e.g., mirrors, prisms, waveguides, optical fibers, etc.) to guide a portion of the laser input 302 from the beam splitter 310 to the beam sensor 320.

[0118] The power sensor 330 can be configured to measure the optical power of the laser input 302. In some embodiments, the power sensor 330 can measure the pulse energy of the beam (e.g., E = P). avg •Δt). In some embodiments, the measurement and measurement module 300 may include one or more optical components (e.g., mirrors, prisms, waveguides, optical fibers, etc.) to guide a portion of the laser input 302 from the beam splitter 310 to the power sensor 330.

[0119] Database 350 may be configured to store one or more measurements from beam sensor 320, power sensor 330, and / or TIS device 400. Database 350 may be further configured to store the TIS pulse width and SC value of laser input 302 over time. In some embodiments, database 350 may be integrated with pulse data from the light source devices (e.g., via a controller and / or power sensor 330). In some embodiments, database 350 may include an online database (e.g., a remote server, cloud server, etc.) configured to aggregate measurement data from one or more light source devices. For example, a remote server may perform data mining and / or machine learning on large amounts of data (e.g., big data) to identify one or more performance trends and / or optimal maintenance plans. In some embodiments, database 350 may communicate with a controller. In some embodiments, measurement and measurement module 300 may include one or more connections (e.g., electrical, wired, wireless, etc.) between beam sensor 320, power sensor 330, and / or TIS device 400 and database 350 to transmit measured data to database 350.

[0120] The TIS device 400 may be configured to receive a portion of a laser input 302 (e.g., a beam) and measure the TIS pulse width of the laser input 302 in the time domain. The TIS device 400 may be further configured to calculate the SC of the laser input 302 based on the measured TIS pulse width. In some embodiments, the measurement and measurement module 300 may include one or more optical components (e.g., mirrors, prisms, waveguides, optical fibers, etc.) to guide a portion of the laser input 302 from the beam splitter 310 to the TIS device 400. In some embodiments, the TIS device 400 may be included together with the measurement and measurement module 300. In some embodiments, the TIS device 400 may be separate from the measurement and measurement module 300, for example, after the measurement and measurement module 300 or between the OPUS and the measurement and measurement module 300.

[0121] In some embodiments, the TIS device 400 can measure the TIS pulse width in real time or near real time. For example, the TIS device 400 can measure the TIS pulse width in real time within 1 millisecond. In some embodiments, the calculated SC can be provided (e.g., via a controller) to the lithography apparatus to reduce errors in the lithography process (e.g., reducing LWR, LER, CD error, CD non-uniformity, or combinations thereof). In some embodiments, the TIS device 400 can calculate the SC in real time or near real time. For example, the TIS device 400 can calculate the SC in real time within 1 millisecond. The TIS device 400 may include a TIS actuator 420 and a TIS processor 440.

[0122] TIS actuator 420 may be configured to adjust one or more components of TIS device 400, for example, to adjust the position and / or rotation of TIS device 400 relative to laser input 302. In some embodiments, TIS actuator 420 may include one or more actuators (e.g., linear, piezoelectric, tilting, rotary, etc.). TIS processor 440 may be configured to square the raw pulse signal of laser input 302 and transform it to the time domain to measure the TIS pulse width. TIS processor 440 may be further configured to calculate SC based on the measured TIS pulse width. In some embodiments, TIS processor 440 may include one or more processors, microprocessors, microcontrollers, and / or ASICs, for example, to calculate SC in real time.

[0123] Exemplary TIS device

[0124] Figure 4 A Time Integral Square (TIS) device 400 is illustrated according to various exemplary embodiments. The TIS device 400 can be configured to measure the TIS pulse width of a light beam and calculate the SC of the beam based on the measured TIS pulse width. The TIS device 400 can be further configured to adjust one or more actuators or control algorithms of the light source device associated with the SC of the beam (e.g., via a controller). Although the TIS device 400 in... Figure 4 While shown as a standalone device and / or system, embodiments of this disclosure may be used in conjunction with other optical systems, such as, but not limited to, radiation sources, lithography apparatuses, light source devices, measurement and measurement modules, and / or other optical systems.

[0125] like Figure 4 As shown, the TIS device 400 may include a TIS sensor 410, a first connector 414, a second connector 416, a third connector 418, a TIS actuator 420, and a TIS processor 440. In some embodiments, the TIS device 400 may receive a portion of a laser input (e.g., a laser beam), measure the TIS pulse width, and calculate the SC of the laser input. In some embodiments, the TIS device 400 may communicate with the beam sensor 320 and / or power sensor 330 of the measurement and measurement module 300, for example, to receive measurements of the wavelength, bandwidth, cross-sectional area, and beam divergence angle of the laser input 302.

[0126] The TIS sensor 410 can be configured to measure the raw pulse signal (e.g., voltage signal) of the laser input 302. In some embodiments, the TIS sensor 410 may include a photomultiplier tube (PMT). The sensor 410 may include a sensor assembly or body (e.g., a PMT assembly) coupled to a first connector 414, a second connector 416, and a third connector 418.

[0127] The first connector 414 can be configured to supply high voltage to the TIS sensor 410. The second connector 416 (e.g., a coaxial connector) can be coupled to the TIS actuator 420 and configured to transmit control signals from the TIS actuator 420 to the TIS sensor 410. The TIS actuator 420 can be configured to adjust one or more components of the TIS sensor 410, for example, to adjust the position and / or rotation of the TIS sensor 410 relative to the laser input 302. In some embodiments, the TIS actuator 420 may include one or more actuators (e.g., linear, piezoelectric, tilting, rotary, etc.).

[0128] A third connector 418 (e.g., a coaxial connector) may be coupled to the TIS processor 440 and configured to transmit measurement data (e.g., raw pulse signals) to the TIS processor 440. The TIS processor 440 may be configured to square the raw pulse signal of the laser input 302 (e.g., a laser beam) and transform it to the time domain to measure the TIS pulse width. The TIS processor 440 may be further configured to calculate the SC based on the measured TIS pulse width. In some embodiments, the TIS processor 440 may include one or more processors, microprocessors, microcontrollers, and / or ASICs, for example, to calculate the SC in real time.

[0129] In some embodiments, the TIS processor 440 can calculate the SC in real time or near real time. For example, the TIS processor 440 can receive a raw pulse signal from the TIS sensor 410, square the raw pulse signal and transform it to the time domain to measure the TIS pulse width, receive measurements of the wavelength, bandwidth, cross-sectional area and beam divergence angle of the laser input (e.g., via a beam sensor), and calculate the SC based on the measurements (e.g., in real time).

[0130] In some embodiments, the TIS processor 440 may calculate SC based on the following equation: Speckle contrast (SC) = Where TIS is the TIS pulse width in the time domain, λ is the wavelength of the beam, c is the speed of light, BW is the bandwidth of the beam, and A... beam It is the cross-sectional area of ​​the light beam, Ω div It is the beam divergence angle of the beam (vertical beam divergence angle multiplied by horizontal beam divergence angle, for example, In some embodiments, the TIS pulse width, the wavelength (λ) of the beam, the bandwidth (BW) (e.g., E95 bandwidth), and the cross-sectional area (A) are specified. beam ) and bundle divergence angle (Ω) div The measurement can be real-time or near real-time, for example, via TIS device 400 and beam sensor.

[0131] In some embodiments, the TIS device 400 can measure the TIS pulse width of the beam, calculate the beam divergence angle (SC) of the beam (e.g., beam 250), transmit the calculated SC value to the controller 260, and the controller 260 can adjust one or more parameters of the SC (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width) to adjust (reduce) the SC value. For example, the controller 260 can adjust the OPoS 244 to pulse broaden the beam (e.g., broadened beam 245), thereby increasing the TIS pulse width and decreasing the SC value.

[0132] Exemplary flowchart

[0133] Figure 5 A flowchart 500 of a light source apparatus according to an exemplary embodiment is shown. Flowchart 500 can be configured to measure the TIS pulse width of the beam in real-time or near real-time and calculate the beam's SC. Flowchart 500 is configured to adjust one or more parameters of the SC (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width) to control and / or optimize the SC (e.g., in real-time). Flowchart 500 can be further configured to reduce errors in the photolithography process (e.g., LWR, LER, CD error, CD non-uniformity, or combinations thereof), perform diagnostics of the light source (light source apparatus), identify optimal maintenance plans for the light source, and increase the lifespan of the light source.

[0134] It should be understood that it is not Figure 5 All operations are necessary to perform the disclosed content provided herein. Furthermore, some operations can be performed simultaneously, sequentially, and / or in conjunction with… Figure 5 The different execution sequences are shown. Flowchart 500 will be referenced. Figure 2-4 The flowchart 500 is described in detail. However, the flowchart 500 is not limited to those exemplary embodiments. Although the flowchart 500 is described in detail... Figure 5 While illustrated as a standalone method, embodiments of this disclosure can be used with other apparatuses, systems, and / or methods, such as, but not limited to, radiation sources SO, lithography apparatuses, light source apparatuses, measurement and measurement modules, TIS apparatuses, and / or other optical systems. In some embodiments, flowchart 500 can be derived from... Figure 2 The light source device 200 shown is implemented.

[0135] In operation 502, the TIS pulse width of the beam of the light source (e.g., the light source device) can be measured in real time or near real time (e.g., via TIS device 400).

[0136] In operation 504, the SC of the beam can be calculated based on the measured TIS pulse width (e.g., via a TIS device). In some embodiments, the SC can be calculated in real time or near real time.

[0137] In operation 506, one or more parameters of the SC can be adjusted based on the calculated SC (e.g., via a controller). In some embodiments, one or more parameters may include the wavelength of the beam (e.g., 193 nm), the bandwidth of the beam (e.g., E95 bandwidth), and the cross-sectional area of ​​the beam (e.g., 1 mm²). 2 The beam divergence angle, the TIS pulse width of the beam, or a combination thereof. In some embodiments, one or more parameters may be adjusted by a controller, for example, via control signals sent to the LNM and / or OPUS.

[0138] In operation 508, the SC can be controlled in real time or near real time. In some embodiments, the wavelength, bandwidth, cross-sectional area, beam divergence angle, and TIS pulse width can be measured in real time (e.g., within 1 ms) or near real time (e.g., within 1 s) via one or more components (e.g., TIS device 400), the SC value can be calculated based on the measured parameters, the SC value can be sent to the controller, and the controller can adjust one or more parameters of the SC to control the SC in real time (e.g., within 1 ms) or near real time (e.g., within 1 s) in sync with the measured parameters.

[0139] In operation 510, optionally, diagnostics of the light source (e.g., the light source device) can be performed based on the TIS pulse width measured over time. In some embodiments, the controller can monitor the TIS pulse width measured over time and / or the SC calculated over time to identify one or more performance trends of the light source, such as a decrease in the TIS pulse width over time. In some embodiments, the controller can correct and / or schedule planned maintenance of one or more components of the light source based on the identified performance trends.

[0140] In operation 512, optionally, one or more actuators (e.g., linear, piezoelectric, tilting, rotary, etc.) or control algorithms (e.g., closed-loop feedback algorithms) corresponding to one or more parameters (e.g., wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width, or combinations thereof) of the SC can be adjusted (e.g., via a controller). In some embodiments, one or more actuators or control algorithms may be adjusted in real time (e.g., within 1 ms) or near real time (e.g., within 1 s) to minimize the SC over time and / or achieve or maintain the desired SC over time.

[0141] While this document may specifically refer to the use of such apparatus, systems, and / or lithography apparatuses in IC manufacturing, it should be clearly understood that such apparatus, systems, and / or lithography apparatuses described herein may have other possible applications, such as in the fabrication of integrated optical systems, guiding and detecting patterns for magnetic domain memories, flat panel displays, LCD panels, thin-film magnetic heads, etc. Those skilled in the art will understand that, in the context of such alternative applications, any use of the terms “mask,” “wafer,” or “die” herein may be considered synonymous with the more general terms “mask,” “substrate,” and “target portion,” respectively.

[0142] While the foregoing may specifically refer to the use of aspects in the context of optical lithography, it should be understood that these aspects can be used in other applications, such as imprint lithography, and are not limited to optical lithography where the context permits. In imprint lithography, the morphology in a patterning apparatus defines the pattern created on a substrate. The morphology of the patterning apparatus can be pressed into a resist layer supplied to the substrate, and the resist is subsequently cured by applying electromagnetic radiation, heat, pressure, or a combination thereof. After the resist has cured, the patterning apparatus is removed from the resist, leaving the pattern.

[0143] It should be understood that the wording or terminology used herein is for descriptive rather than limiting purposes, and that the terminology or terminology used herein shall be interpreted by those skilled in the art based on the teachings herein.

[0144] As used herein, the term "substrate" describes a material on which a layer of material is added. In some respects, the substrate itself may be patterned, and the material added thereon may also be patterned, or may remain unpatterned. The substrate referred to herein may be processed before or after exposure, for example, in a track unit (e.g., a tool that typically applies a resist layer to the substrate and develops the exposed resist), a measurement unit, and / or an inspection unit. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Furthermore, a substrate may be processed multiple times, for example, to create a multilayer IC, such that the term "substrate" as used herein may also refer to a substrate that already contains multiple processed layers.

[0145] The following examples are illustrative and do not limit any aspect of this disclosure. Other suitable modifications and adaptations to various conditions and parameters that are obvious to those skilled in the art and related fields and are commonly encountered in the field are all within the spirit and scope of this disclosure.

[0146] While specific aspects have been described above, it should be understood that these aspects may be practiced in ways other than those described. This description is not intended to limit the scope of the claims.

[0147] It should be understood that the detailed description section, and not the abstract and summary section, is intended to interpret the claims. The abstract and summary section may set forth one or more, but not all, exemplary aspects as contemplated by the inventors, and therefore do not limit the aspects and the appended claims in any way.

[0148] The above describes various aspects using functional building blocks, which illustrate the implementation of specified functions and their relationships. For ease of description, the boundaries of these functional building blocks are arbitrarily defined. Alternative boundaries can be defined as long as the specified functions and their relationships are properly executed.

[0149] The foregoing description of the specific aspects will fully reveal the overall nature of the aspects, enabling others to easily modify and / or adapt these specific aspects for various applications without excessive experimentation, by applying knowledge within the scope of the art, without departing from the overall concept of the aspects. Therefore, based on the teachings and guidance presented herein, such adaptations and modifications are intended to fall within the meaning and scope of equivalents of the disclosed aspects.

[0150] The breadth and scope of all aspects should not be limited by any of the foregoing exemplary aspects, but should be defined solely by the appended claims and their equivalents.

Claims

1. A light source device, comprising: A gas discharge stage, configured to output a light beam, comprises: An optical amplifier, including a chamber configured to contain a gas discharge medium; and An excitation device is configured to excite the gas discharge medium and generate the light beam; and The Time Integral Square (TIS) device is configured as follows: A portion of the beam is received and the time integral squared (TIS) pulse width of the beam is measured in the time domain. The speckle contrast (SC) of the beam is calculated based on the measured time integral square (TIS) pulse width. The time integral squared (TIS) pulse width is measured in real time or near real time, and The calculated speckle contrast (SC) is provided to the lithography apparatus to reduce errors in the lithography process.

2. The light source device according to claim 1, wherein the speckle contrast (SC) is calculated in real time or near real time.

3. The light source device according to claim 1, wherein the speckle contrast (SC) is determined by the following equation: Speckle contrast (SC) = Where TIS is the time integral squared (TIS) pulse width in the time domain, λ is the wavelength of the beam, c is the speed of light, BW is the bandwidth of the beam, and A beam It is the cross-sectional area of ​​the beam, and Ω div It is the beam divergence angle of the beam.

4. The light source device according to claim 3, wherein the time integral squared (TIS) pulse width, the wavelength of the light beam, the bandwidth of the light beam, the cross-sectional area of ​​the light beam, and / or the beam divergence angle of the light beam are measured in real time or near real time.

5. The light source device according to claim 3, wherein the bandwidth of the light beam is an E95 bandwidth, corresponding to the spectral bandwidth of the light beam containing 95% of the total pulse energy of the light beam.

6. The light source apparatus of claim 1, wherein the light source apparatus is configured to adjust the time integral square (TIS) pulse width based on the calculated speckle contrast (SC) to reduce critical dimension (CD) inhomogeneity in the lithography apparatus.

7. The light source device according to claim 1, wherein the time integral square (TIS) pulse width is measured in real time within one millisecond.

8. The light source device according to claim 1, wherein the time integral square (TIS) pulse width is measured over time to perform diagnostics on the light source device.

9. The light source device according to claim 8, wherein: The time integral squared (TIS) pulse width is measured over time to identify the performance trend of one or more optical components of the light source device, and The one or more optical components are calibrated based on the identified performance trend.

10. The light source device according to claim 1, wherein the time integral square (TIS) device comprises: A sensor is configured to measure the raw pulse signal of the light beam; as well as A processor, coupled to the sensor and configured to square the raw pulse signal and convert it to the time domain to measure the time integral squared (TIS) pulse width.

11. The light source device of claim 10, wherein the processor is configured to calculate the speckle contrast (SC) based on the measured time integral square (TIS) pulse width.

12. The light source device of claim 1, further comprising an optical pulse stretcher configured to adjust the time integral square (TIS) pulse width.

13. The light source device of claim 1, further comprising a controller coupled to the time integral square (TIS) device and configured to control the speckle contrast (SC).

14. The light source device of claim 13, wherein the controller is configured to adjust one or more actuators of the light source device, the one or more actuators corresponding to one or more parameters of the speckle contrast (SC).

15. The light source device of claim 13, wherein the controller includes a closed-loop feedback algorithm configured to minimize the speckle contrast (SC).

16. The light source device of claim 13, wherein the controller includes a closed-loop feedback algorithm configured to achieve or maintain a desired speckle contrast (SC).

17. The light source device of claim 13, wherein the controller is configured to perform data mining and / or machine learning based on the time integral squared (TIS) pulse width that varies over time to identify the optimal maintenance plan for the light source device.

18. The light source device according to claim 1, wherein the time integral square (TIS) device is an online passive device and is integrated into the optical path of the light beam.

19. The light source device of claim 1, further comprising a database coupled to the time integral square (TIS) device and configured to store time integral square (TIS) pulse widths and speckle contrast (SC) varying over time.

20. The light source device according to claim 19, wherein the database is integrated with the pulse data of the light source device.

21. A time integral square (TIS) device configured to calculate the speckle contrast (SC) of a beam, said time integral square (TIS) device comprising: A sensor is configured to measure the raw pulse signal of the light beam; as well as A processor, coupled to the sensor and configured to square the raw pulse signal and convert the squared raw pulse signal to the time domain to measure the time integral squared (TIS) pulse width of the beam. The time integral squared (TIS) pulse width is measured in real time or near real time, and The measured time integral square (TIS) pulse width is used to adjust one or more actuators or control algorithms of the light source, which are associated with the speckle contrast (SC).

22. The Time Integral Square (TIS) apparatus of claim 21, wherein the processor is configured to calculate the speckle contrast (SC) of the beam based on the measured Time Integral Square (TIS) pulse width.

23. The Time Integral Square (TIS) apparatus of claim 22, wherein the speckle contrast (SC) is calculated in real time or near real time.

24. The Time Integral Square (TIS) device according to claim 21, wherein the Time Integral Square (TIS) pulse width is measured in real time within one millisecond.

25. The Time Integral Square (TIS) device according to claim 21, wherein the Time Integral Square (TIS) device is an online passive device and is integrated into the optical path of the beam.

26. A measuring and measuring device, comprising: An automatic shutter mechanism is configured as part of the beam guide; An optical measuring device is configured to measure one or more parameters of the light beam; as well as A Time Integral Square (TIS) device is configured to calculate the speckle contrast (SC) of the beam based on the time integral square (TIS) pulse width of the beam measured in the time domain. The time integral squared (TIS) pulse width is measured in real time or near real time, and The measured time integral square (TIS) pulse width is used to adjust one or more actuators or control algorithms of the light source, which are associated with the speckle contrast (SC).

27. The measurement and measurement apparatus of claim 26, wherein the calculated speckle contrast (SC) is provided to the lithography apparatus to reduce errors in the lithography process.

28. The measurement and measuring apparatus of claim 26, wherein the speckle contrast (SC) is calculated in real time or near real time.

29. The measurement and measuring apparatus of claim 26, wherein one or more parameters of the light beam include wavelength, bandwidth, cross-sectional area, beam divergence angle, or a combination thereof.

30. The measuring and measurement apparatus according to claim 26, wherein the optical measuring apparatus comprises: A beam sensor, a power sensor, a spectrometer, a beam expander, or a combination of the above.

31. The measurement and measurement apparatus of claim 26, wherein the automatic shutter device includes a beam splitter configured to passively isolate a portion of the light beam.

32. The measuring and measurement apparatus of claim 26, wherein the automatic shutter device includes a modulator configured to guide a portion of the light beam at a specific time.

33. The measurement and measurement apparatus of claim 26, further comprising a database coupled to the optical measurement apparatus, the time integral square (TIS) apparatus, or both, the database being configured to store one or more measurements from the optical measurement apparatus, the time integral square (TIS) apparatus, or both.

34. The measuring and measuring apparatus of claim 33, wherein the one or more measured values ​​include: Wavelength, bandwidth, cross-sectional area, beam divergence angle, TIS pulse width, SC or a combination of the above.

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