Gas distribution plate, method of manufacturing and use thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NINGBO JIANGFENGXINCHUANG TECH CO LTD
- Filing Date
- 2026-05-21
- Publication Date
- 2026-07-24
AI Technical Summary
Existing chemical vapor deposition (CVD) devices have shortcomings in terms of film thickness uniformity, often exhibiting a problem where the thickness is higher in the middle and lower at the edges. Existing devices also have complex structures and their improvement effects are generally limited.
Design a gas distribution plate including a nozzle assembly and a baffle. The baffle is set in the cavity of the nozzle assembly, and the air inlet pipe is perpendicular to the baffle. The baffle prevents the gas from flowing out directly from the middle and achieves flow diversion, thereby optimizing the gas flow distribution.
It significantly improves the uniformity of gas flow distribution, reduces the problem of high flow rate in the middle and low flow rate at the sides of the film, greatly improves the uniformity of the film, and controls the gas flow rate difference to within 1%.
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Figure CN122446151A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of chemical vapor deposition technology, and relates to a gas distribution disk, its preparation method and application. Background Technology
[0002] Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, high-performance solid materials. This process is commonly used in the semiconductor industry to produce thin films.
[0003] In typical chemical vapor deposition, a wafer or substrate is exposed to one or more volatile precursors, which react and / or decompose on the substrate surface to produce the desired deposit, i.e., the target thin film. However, since the vapor deposition process occurs simultaneously at multiple locations, the uniformity of the thickness of the target thin film is prone to occur.
[0004] CN118681425A discloses a mixed gas generating apparatus and method. The generating apparatus includes a carrier gas tank, a gas pipeline, a liquid pipeline, a liquid tank, an evaporation mixing module, a gas flow controller, a liquid flow controller, and a heating controller. The heating controller operates based on the gas flow rate corresponding to the gas flow controller, the liquid flow rate corresponding to the liquid flow controller, and the target temperature required for the mixed gas.
[0005] CN118685763A discloses a semiconductor wafer thin film chemical vapor deposition apparatus that facilitates uniform deposition, comprising: a deposition chamber, which is a carrier having a preset deposition space; an inner shaft, vertically rotatably connected to the center of the deposition chamber, on which a planetary gear set is sleeved; a drive unit, installed below the deposition chamber; a gas supply device, disposed above the center of the deposition chamber; a gas delivery unit, disposed within the deposition chamber above the inner shaft, the gas supply device being connected to the gas delivery unit and delivering the reaction gas to the deposition chamber through the gas delivery unit; and an exhaust channel, disposed on one side of the deposition chamber and connected to the deposition chamber.
[0006] The above-mentioned scheme improves the uniformity of chemical vapor deposition by adjusting the chemical vapor deposition device. However, the device has a complex structure, is prone to failure, and the improvement effect is generally poor, resulting in limited applicability. Summary of the Invention
[0007] The purpose of this invention is to provide a gas distribution disk, its preparation method, and its application. The gas distribution disk of this invention has a simple structure, which can improve the uniformity of gas flow distribution, avoid the problem of the film being high in the middle and low at both sides during the chemical vapor deposition process, and greatly improve the uniformity of the film obtained by the chemical vapor deposition method.
[0008] To achieve this objective, the present invention adopts the following technical solution: In a first aspect, the present invention provides a gas distribution plate, the gas distribution plate including a nozzle assembly and a baffle, the nozzle assembly including an upper plate body, a lower plate body and an air inlet pipe, the air inlet pipe passing through the center of the upper plate body, the baffle being disposed in the cavity between the upper plate body and the lower plate body of the nozzle assembly, the air inlet pipe being perpendicular to the baffle, and the centers of the upper plate body, the lower plate body, the air inlet pipe and the baffle being on the same horizontal line.
[0009] The present invention provides a baffle in the cavity of the nozzle assembly, the baffle being directly opposite the air inlet of the air inlet pipe. When the air inlet pipe injects gas into the cavity, the baffle can prevent the gas from flowing out directly from the middle and achieve diversion, thereby improving the uniformity of the gas flow rate from the lower plate of the nozzle assembly.
[0010] Preferably, the diameter ratio of the air intake pipe to the baffle is (0.15~0.2):1, for example: 0.15:1, 0.16:1, 0.17:1, 0.18:1, 0.19:1 or 0.2:1, etc., and is not limited to the listed values. Other unlisted values within this range are also applicable.
[0011] Preferably, the lower plate is provided with an air vent.
[0012] Preferably, a limit post is provided on the side of the lower plate facing the upper plate.
[0013] Preferably, the upper plate is provided with a limiting port.
[0014] Preferably, the limiting port is fitted onto the limiting post.
[0015] Preferably, the number of limiting posts is ≥3.
[0016] Preferably, the number of the limiting ports is the same as the number of the limiting posts.
[0017] Preferably, the distance between the baffle and the upper plate is 3.45mm to 3.55mm, for example: 3.45mm, 3.48mm, 3.5mm, 3.52mm or 3.55mm, etc., and is not limited to the listed values. Other unlisted values within this range are also applicable.
[0018] In this invention, the outlet of the air intake pipe is flush with the upper plate, that is, the distance between the baffle and the upper plate is the same as the distance between the baffle and the air intake pipe.
[0019] Preferably, the distance between the baffle and the lower plate is 8.426mm to 8.526mm, for example: 8.426mm, 8.458mm, 8.482mm, 8.503mm or 8.526mm, etc., and is not limited to the listed values. Other unlisted values within this range are also applicable.
[0020] Preferably, the upper plate and / or lower plate are provided with fixing bolts.
[0021] Preferably, the edge of the baffle is provided with a notch.
[0022] In a second aspect, the present invention provides a method for preparing a gas distribution disk as described in the first aspect, the method comprising the following steps: An intake pipe is passed through the center of the upper plate to obtain an intake assembly. After welding a baffle to the center of the lower plate, the intake assembly and the lower plate are combined to obtain the gas distribution plate.
[0023] and / or An intake pipe is passed through the center of the upper plate to obtain an intake assembly. A baffle is welded to the center of the upper plate of the intake assembly. The intake assembly and the lower plate are combined to obtain the gas distribution plate.
[0024] The baffle described in this invention can be welded to the upper plate or the lower plate. After welding, due to the presence of the welding point, a gap will appear between the baffle and the plate. If the thickness of the welding point is too low or too high (the thickness of the welding point will affect the stability of the baffle, so the thickness of the welding point needs to be selected according to the requirements), resulting in a gap that is too small or too large, then the baffle needs to be welded to the lower plate to adjust the distance between the baffle and the intake pipe.
[0025] Preferably, when welding the baffle onto the lower plate, a fixing bolt is provided on the lower plate, and the notch of the baffle is fixed to the fixing bolt before welding.
[0026] Preferably, when welding the baffle onto the upper plate, a fixing bolt is provided on the upper plate, and the notch of the baffle is fixed to the fixing bolt before welding.
[0027] Before welding, the notch of the baffle is fitted onto the fixing bolt and then welded. The fixing bolt can better stabilize the position of the baffle, so that the baffle is located at the center of the upper or lower plate, directly facing the air intake pipe.
[0028] Thirdly, the present invention provides an application of the gas distribution disk as described in the first aspect, the gas distribution disk being used in a chemical vapor deposition apparatus.
[0029] Compared with the prior art, the present invention has the following beneficial effects: (1) The gas distribution disk of the present invention can improve the uniformity of gas flow distribution, avoid the problem of the film being high in the middle and low on both sides during the chemical vapor deposition process, and greatly improve the uniformity of the film obtained by the chemical vapor deposition method.
[0030] (2) The gas distribution disk of the present invention can improve the uniformity of gas flow distribution, reduce the problem of high middle and low sides of film in the chemical vapor deposition process, improve the uniformity of film obtained by chemical vapor deposition method, and control the gas difference at each point within 1% by adjusting the distance between each structure and the size of the components of the gas distribution disk. Attached Figure Description
[0031] Figure 1 The schematic diagram of the gas distribution plate of the present invention shows that 1 is the air inlet pipe, 2 is the upper plate body, 3 is the lower plate body, and 4 is the baffle.
[0032] Figure 2 This is a schematic diagram of the disassembled structure of the gas distribution plate of the present invention. 1 is the air inlet pipe, 2 is the upper plate body, 3 is the lower plate body, 4 is the baffle, 5 is the limiting port, 6 is the limiting post, 7 is the fixing bolt, 8 is the notch, 9 is the welding point, and 10 is the air outlet.
[0033] Figure 3 This is a schematic diagram of the planar structure of the component obtained by welding the baffle onto the lower plate body according to the present invention. 3 is the lower plate body, 4 is the baffle, 6 is the limiting post, 7 is the fixing bolt, 8 is the notch, 9 is the welding point, and 10 is the air outlet.
[0034] Figure 4 This is a thermal analysis diagram of the flow distribution effect of the gas distribution disk described in Example 1.
[0035] Figure 5 This is a thermal analysis diagram of the flow distribution effect of the gas distribution disk described in Comparative Example 1. Detailed Implementation
[0036] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.
[0037] Example 1 This embodiment provides a gas distribution plate, the structural schematic diagram of which is shown below. Figure 1 As shown, the gas distribution plate includes a nozzle assembly and a baffle 4. The nozzle assembly includes an upper plate body 2, a lower plate body 3, and an air inlet pipe 1. The air inlet pipe 1 passes through the center of the upper plate body 2. The baffle 4 is disposed in the cavity between the upper plate body 2 and the lower plate body 3 of the nozzle assembly. The air inlet pipe 1 is perpendicular to the baffle 4. The centers of the upper plate body 2, the lower plate body 3, the air inlet pipe 1, and the baffle 4 are on the same horizontal line.
[0038] The schematic diagram of the disassembled structure of the gas distribution disk is shown below. Figure 2As shown, the air intake pipe 1 passes through the center of the upper plate 2. The upper plate 2 is provided with six limiting ports 5. The lower plate 3 is provided with six limiting posts 6, a fixing bolt 7 and multiple air outlets 10. A baffle 4 is provided in the cavity between the upper plate 2 and the lower plate 3. The baffle 4 is provided with a notch 8 and three welding points 9.
[0039] The gas distribution disk is prepared by the following method: The intake pipe 1 is passed through the center of the upper plate 2 to obtain the intake assembly. Using the lower plate 3 containing the fixing bolt 7, the notch 8 of the baffle 4 is placed on the fixing bolt 7 and fixed. The baffle 4 is then welded to the center of the lower plate 3. The planar structure diagram of the assembly is shown below. Figure 3 As shown, the notch 8 of the baffle 4 is fitted onto the fixing bolt 7; The limiting port 5 of the air intake assembly is placed on the limiting post 6 of the lower plate to obtain the gas distribution plate.
[0040] The diameter of the intake pipe 1 is 9.6 mm, the diameter of the baffle 4 is 54 mm (the diameter ratio of the intake pipe to the baffle is 0.18:1), the distance between the baffle 4 and the upper plate 2 is 3.5 mm, and the distance between the baffle 4 and the lower plate 3 is 8.476 mm.
[0041] Example 2 This embodiment provides a gas distribution plate, the structural schematic diagram of which is shown below. Figure 1 As shown, the gas distribution plate includes a nozzle assembly and a baffle 4. The nozzle assembly includes an upper plate body 2, a lower plate body 3, and an air inlet pipe 1. The air inlet pipe 1 passes through the center of the upper plate body 2. The baffle 4 is disposed in the cavity between the upper plate body 2 and the lower plate body 3 of the nozzle assembly. The air inlet pipe 1 is perpendicular to the baffle 4. The centers of the upper plate body 2, the lower plate body 3, the air inlet pipe 1, and the baffle 4 are on the same horizontal line.
[0042] The schematic diagram of the disassembled structure of the gas distribution disk is shown below. Figure 2 As shown, the air intake pipe 1 passes through the center of the upper plate 2. The upper plate 2 is provided with six limiting ports 5. The lower plate 3 is provided with six limiting posts 6, a fixing bolt 7 and multiple air outlets 10. A baffle 4 is provided in the cavity between the upper plate 2 and the lower plate 3. The baffle 4 is provided with a notch 8 and three welding points 9.
[0043] The gas distribution disk is prepared by the following method: The intake pipe 1 is passed through the center of the upper plate 2 to obtain the intake assembly. Using the lower plate 3 containing the fixing bolt 7, the notch 8 of the baffle 4 is placed on the fixing bolt 7 and fixed. The baffle 4 is then welded to the center of the lower plate 3. The planar structure diagram of the assembly is shown below. Figure 3 As shown, the notch 8 of the baffle 4 is fitted onto the fixing bolt 7; The limiting port 5 of the air intake assembly is placed on the limiting post 6 of the lower plate to obtain the gas distribution plate.
[0044] The diameter of the air intake pipe 1 is 9.6 mm, the diameter of the baffle 4 is 64 mm (the diameter ratio of the air intake pipe to the baffle is 0.15:1), the distance between the baffle 4 and the upper plate 2 is 3.45 mm, and the distance between the baffle 4 and the lower plate 3 is 8.426 mm.
[0045] Example 3 This embodiment provides a gas distribution plate, the structural schematic diagram of which is shown below. Figure 1 As shown, the gas distribution plate includes a nozzle assembly and a baffle 4. The nozzle assembly includes an upper plate body 2, a lower plate body 3, and an air inlet pipe 1. The air inlet pipe 1 passes through the center of the upper plate body 2. The baffle 4 is disposed in the cavity between the upper plate body 2 and the lower plate body 3 of the nozzle assembly. The air inlet pipe 1 is perpendicular to the baffle 4. The centers of the upper plate body 2, the lower plate body 3, the air inlet pipe 1, and the baffle 4 are on the same horizontal line.
[0046] The schematic diagram of the disassembled structure of the gas distribution disk is shown below. Figure 2 As shown, the air intake pipe 1 passes through the center of the upper plate 2. The upper plate 2 is provided with six limiting ports 5. The lower plate 3 is provided with six limiting posts 6, a fixing bolt 7 and multiple air outlets 10. A baffle 4 is provided in the cavity between the upper plate 2 and the lower plate 3. The baffle 4 is provided with a notch 8 and three welding points 9.
[0047] The gas distribution disk is prepared by the following method: The intake pipe 1 is passed through the center of the upper plate 2 to obtain the intake assembly. Using the lower plate 3 containing the fixing bolt 7, the notch 8 of the baffle 4 is placed on the fixing bolt 7 and fixed. The baffle 4 is then welded to the center of the lower plate 3. The planar structure diagram of the assembly is shown below. Figure 3 As shown, the notch 8 of the baffle 4 is fitted onto the fixing bolt 7; The limiting port 5 of the air intake assembly is placed on the limiting post 6 of the lower plate to obtain the gas distribution plate.
[0048] The diameter of the air intake pipe 1 is 9.6 mm, the diameter of the baffle 4 is 48 mm (the diameter ratio of the air intake pipe to the baffle is 0.2:1), the distance between the baffle 4 and the upper plate 2 is 3.55 mm, and the distance between the baffle 4 and the lower plate 3 is 8.526 mm.
[0049] Example 4 The only difference between this embodiment and Embodiment 1 is that the diameter of the intake pipe 1 is 9.6 mm and the diameter of the baffle 4 is 80 mm (the diameter ratio of the intake pipe to the baffle is 0.12:1). All other conditions and parameters are exactly the same as in Embodiment 1.
[0050] Example 5 The only difference between this embodiment and Embodiment 1 is that the diameter of the intake pipe 1 is 9.6 mm and the diameter of the baffle 4 is 28.34 mm (the diameter ratio of the intake pipe to the baffle is 0.25:1). All other conditions and parameters are exactly the same as in Embodiment 1.
[0051] Example 6 The only difference between this embodiment and Embodiment 1 is that the distance between the baffle 4 and the upper plate 2 is 3.4 mm. All other conditions and parameters are exactly the same as in Embodiment 1.
[0052] Example 7 The only difference between this embodiment and Embodiment 1 is that the distance between the baffle 4 and the upper plate 2 is 3.6mm. All other conditions and parameters are exactly the same as in Embodiment 1.
[0053] Example 8 The only difference between this embodiment and Embodiment 1 is that the distance between the baffle 4 and the lower plate 3 is 8.42mm. All other conditions and parameters are exactly the same as in Embodiment 1.
[0054] Example 9 The only difference between this embodiment and Embodiment 1 is that the distance between the baffle 4 and the lower plate 3 is 8.53mm. All other conditions and parameters are exactly the same as in Embodiment 1.
[0055] Comparative Example 1 The only difference between this comparative example and Example 1 is that no baffle is provided between the upper plate 2 and the lower plate 3. All other conditions and parameters are exactly the same as in Example 1.
[0056] Performance testing: Silane was introduced into the gas distribution disks obtained in Examples 1-9. The uniformity of gas flow was compared at the same location, where R is the radial distance. For example, 30mm < R < 60mm represents the gas flow in the annular region 30mm to 60mm from the center. The test results are shown in Table 1. Table 1 As can be seen from Table 1, and from Examples 1-9, the gas distribution disk of the present invention can improve the uniformity of gas flow distribution, reduce the problem of high thickness in the middle and low thickness on both sides of the film during chemical vapor deposition, and improve the uniformity of the film obtained by chemical vapor deposition. By adjusting the distance between the structures of the gas distribution disk and the size of the components, the difference in gas introduced at each point can be controlled within 1%.
[0057] Comparing Examples 1 and 4-5, it can be seen that in the gas distribution disk of the present invention, the diameter ratio of the inlet pipe to the baffle affects the gas distribution effect of the gas distribution disk. When the diameter ratio of the inlet pipe to the baffle is controlled at 0.15~0.2:1, the gas distribution disk has a better gas distribution effect and the film thickness obtained by chemical vapor deposition is uniform. If the diameter of the baffle is too large, the gas flow rate at the center point is too low; if the diameter of the baffle is too small, the gas flow rate at the center point is too high.
[0058] A comparison of Examples 1 and 6-7 shows that in the gas distribution disk of the present invention, the distance between the baffle and the upper disk affects the gas distribution effect of the gas distribution disk. When the distance between the baffle and the upper disk is controlled at 3.45mm~3.55mm, the gas distribution disk has a better gas distribution effect, and the film thickness obtained by chemical vapor deposition is uniform. If the distance between the baffle and the upper disk is too large, the gas flow rate in the central area is too high; if the distance between the baffle and the upper disk is too small, the gas flow rate in the edge area is too low.
[0059] A comparison of Examples 1 and 8-9 shows that in the gas distribution disk of the present invention, the distance between the baffle and the lower disk affects the gas distribution effect of the gas distribution disk. When the distance between the baffle and the lower disk is controlled at 8.426mm~8.526mm, the gas distribution disk has a better gas distribution effect, and the film thickness obtained by chemical vapor deposition is uniform. If the distance between the baffle and the lower disk is too large, the gas flow rate in the central area is too high; if the distance between the baffle and the lower disk is too small, the gas flow rate in the edge area is too low.
[0060] The thermal analysis diagrams of the flow distribution effect of the gas distribution disks described in Example 1 and Comparative Example 1 are shown below. Figure 4-5 As shown, by Figure 4-5 Analysis shows that, by comparing Example 1 and Comparative Example 1, the present invention provides a baffle in the cavity of the nozzle assembly, with the baffle facing the air hole of the air inlet pipe. When the air inlet pipe injects gas into the cavity, the baffle can prevent the gas from flowing out directly from the middle and achieve diversion, thereby improving the uniformity of the gas flow rate from the lower plate of the nozzle assembly.
[0061] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.
Claims
1. A gas distribution disk, characterized in that, The gas distribution plate includes a nozzle assembly and a baffle. The nozzle assembly includes an upper plate, a lower plate, and an air inlet pipe. The air inlet pipe passes through the center of the upper plate. The baffle is disposed in the cavity between the upper plate and the lower plate of the nozzle assembly. The air inlet pipe is perpendicular to the baffle. The centers of the upper plate, the lower plate, the air inlet pipe, and the baffle are on the same horizontal line.
2. The gas distribution disk as described in claim 1, characterized in that, The diameter ratio of the intake pipe to the baffle is (0.15~0.2):
1.
3. The gas distribution disk as described in claim 1 or 2, characterized in that, The lower plate is provided with air vents.
4. The gas distribution disk as described in any one of claims 1-3, characterized in that, A limit post is provided on the side of the lower plate facing the upper plate; Preferably, a limit port is provided on the upper plate; Preferably, the limiting port is fitted onto the limiting post.
5. The gas distribution disk as described in claim 4, characterized in that, The number of limiting posts is ≥3; Preferably, the number of the limiting ports is the same as the number of the limiting posts.
6. The gas distribution disk according to any one of claims 1-5, characterized in that, The distance between the baffle and the upper plate is 3.45mm~3.55mm; Preferably, the distance between the baffle and the lower plate is 8.426mm to 8.526mm.
7. The gas distribution disk as described in any one of claims 1-6, characterized in that, The upper plate and / or lower plate are provided with fixing bolts; Preferably, the edge of the baffle is provided with a notch.
8. A method for preparing a gas distribution disk as described in any one of claims 1-7, characterized in that, The preparation method includes the following steps: An intake pipe is passed through the center of the upper plate to obtain an intake assembly. After welding the baffle to the center of the lower plate, the intake assembly and the lower plate are combined to obtain the gas distribution plate. and / or An intake pipe is passed through the center of the upper plate to obtain an intake assembly. A baffle is welded to the center of the upper plate of the intake assembly. The intake assembly and the lower plate are combined to obtain the gas distribution plate.
9. The preparation method according to claim 8, characterized in that, When welding the baffle to the lower plate body, a fixing bolt is provided on the lower plate body. The notch of the baffle is fixed to the fixing bolt before welding. Preferably, when welding the baffle onto the upper plate, a fixing bolt is provided on the upper plate, and the notch of the baffle is fixed to the fixing bolt before welding.
10. An application of the gas distribution disk as described in any one of claims 1-7, characterized in that, The gas distribution disk is used in a chemical vapor deposition apparatus.