A cleaning device and a cleaning method for cleaning bonding adhesive

Abstract

The embodiment of the present disclosure provides a cleaning device and a cleaning method for cleaning bonding glue. The cleaning device comprises: a cleaning chamber, which is used for soaking a semiconductor structure with a first cleaning liquid, performing a first cleaning process on the semiconductor structure after the soaking process with a second cleaning liquid, and performing a second cleaning process on the semiconductor structure after the first cleaning process with a third cleaning liquid to remove the bonding glue on the surface of the semiconductor structure; a recovery assembly, which is used for filtering the third cleaning liquid discharged from the cleaning chamber to obtain a recovery liquid; the concentration of the recovery liquid is greater than or equal to 90% of the concentration of the third cleaning liquid, and the mass proportion of the bonding glue in the recovery liquid is less than or equal to 3%; and a first liquid supply assembly, which is connected to the recovery assembly and the cleaning chamber, and is used for conveying the recovery liquid to the cleaning chamber to supplement the first cleaning liquid and / or the second cleaning liquid.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a cleaning apparatus and cleaning method for cleaning bonding adhesive. Background Technology

[0002] In the manufacturing process of integrated circuits, semiconductor silicon wafers typically undergo bonding and debonding processes. After debonding, the bonding adhesive remaining on the surface of the semiconductor silicon wafer has strong adhesion and is difficult to completely remove. This results in a huge consumption of cleaning fluid during the cleaning process, leading to high costs and difficult waste disposal. Furthermore, the cleaning process requires numerous steps, resulting in long cleaning cycles, limited production capacity, and poor cleaning effectiveness on the sidewalls of complex three-dimensional structures or high aspect ratio structures on semiconductor silicon wafers. Summary of the Invention

[0003] In view of this, embodiments of the present disclosure provide a cleaning apparatus and a cleaning method for cleaning bonding adhesive.

[0004] To achieve the above objectives, the technical solution disclosed herein is implemented as follows: In a first aspect, embodiments of this disclosure provide a cleaning apparatus for cleaning bonding adhesive, comprising: a cleaning chamber for immersing a semiconductor structure in a first cleaning solution, for performing a first cleaning treatment on the immersed semiconductor structure in a second cleaning solution, and for performing a second cleaning treatment on the semiconductor structure in a third cleaning solution to remove bonding adhesive from the surface of the semiconductor structure; and a recovery component for filtering the third cleaning solution discharged from the cleaning chamber to obtain a recovery solution; wherein the concentration of the recovery solution is greater than or equal to 90% of the concentration of the third cleaning solution, and the mass proportion of bonding adhesive in the recovery solution is less than or equal to 3%. A first liquid supply assembly, connected to the recovery assembly and the cleaning chamber, is used to deliver the recovered liquid to the cleaning chamber to replenish the first cleaning liquid and / or the second cleaning liquid; the recovery assembly includes: a first liquid level monitoring component, used to detect the liquid level height in the recovery assembly; wherein, when the liquid level height in the recovery assembly is greater than a first preset height, the recovery assembly is used to deliver the recovered liquid to the first liquid supply assembly; the cleaning device is used to discharge the recovered liquid in the recovery assembly at a preset cycle; and / or, when the liquid level height in the recovery assembly is less than or equal to the first preset height, the cleaning device is used to discharge the recovered liquid in the recovery assembly.

[0005] In some embodiments, the first liquid supply assembly includes: a first pipeline connecting the recovery assembly and the cleaning chamber for delivering the recovered liquid to the cleaning chamber; and a delivery pump disposed on the first pipeline for adjusting the pressure value within the first pipeline; wherein, when the recovery assembly delivers the recovered liquid to the cleaning chamber, the delivery pump is specifically used to control the pressure value within the first pipeline to be greater than or equal to a preset pressure.

[0006] In some embodiments, the first liquid supply assembly further includes: a pressure monitoring component disposed in the first pipeline, used to monitor the pressure value in the first pipeline and output a pressure signal corresponding to the pressure value; the delivery pump is specifically used to adjust the pressure value in the first pipeline according to the pressure signal.

[0007] In some embodiments, the first liquid supply assembly further includes: a first filter component disposed in the first pipeline for filtering the recovered liquid so that the mass ratio of the bonding adhesive in the recovered liquid is less than or equal to 1%.

[0008] In some embodiments, the first liquid supply assembly further includes: a first storage chamber disposed on the first pipeline on the side of the delivery pump away from the recovery assembly, for storing the first cleaning fluid and the second cleaning fluid; and a second liquid level monitoring component for monitoring the liquid level in the first storage chamber; wherein, when the liquid level in the first storage chamber is less than or equal to a second preset height, the recovery assembly is used to deliver the recovered fluid to the first liquid supply assembly.

[0009] In some embodiments, the cleaning apparatus further includes: a gas supply component connected to the cleaning chamber for delivering cleaning gas to the cleaning chamber; the cleaning chamber includes a mixing component for mixing the second cleaning liquid and the cleaning gas to obtain a two-fluid mixture; the cleaning chamber is used to perform the first cleaning process on the semiconductor structure after immersion treatment using the two-fluid mixture.

[0010] In some embodiments, the mixing component includes a two-fluid nozzle with a venturi structure and a pulse generator; the two-fluid nozzle is used to mix the second cleaning fluid and the cleaning gas; the pulse generator is connected to the inlet of the venturi structure and is used to apply pulse pressure to the interior of the venturi structure.

[0011] In some embodiments, the cleaning apparatus further includes a high-frequency ultrasonic transducer, which is positioned at a distance less than a preset distance from the semiconductor structure; the high-frequency ultrasonic transducer is used to convert electrical energy into high-frequency ultrasonic signals and transmit them to the surface of the semiconductor structure.

[0012] In some embodiments, the cleaning apparatus further includes: a microcapsule supply component connected to the recovery component for supplying microcapsules to the recovery component to obtain the recovery liquid comprising the microcapsules; the cleaning chamber for immersing the semiconductor structure in a first cleaning liquid comprising the microcapsules, and / or performing the first cleaning treatment on the immersed semiconductor structure in a second cleaning liquid comprising the microcapsules; the microcapsules rupture during the immersion treatment and / or during the first cleaning treatment and generate microjets on the surface of the semiconductor structure.

[0013] In some embodiments, the recycling assembly includes: a second filter element for filtering the third cleaning fluid discharged from the cleaning chamber so that the mass ratio of the bonding adhesive in the recycled fluid is less than or equal to 3%; a second storage chamber for storing the recycled fluid; and the second filter element is disposed in the second storage chamber.

[0014] In some embodiments, the cleaning device further includes: a second liquid supply assembly connected to the cleaning chamber, for supplying the third cleaning fluid to the cleaning chamber to replenish the third cleaning fluid; when the liquid level in the first liquid supply assembly is less than or equal to a third preset height, the second liquid supply assembly is further used to supply the third cleaning fluid to the first liquid supply assembly to replenish the first cleaning fluid and / or the second cleaning fluid.

[0015] In some embodiments, the cleaning chamber is further configured to trim the bonding adhesive on the semiconductor structure before performing a first cleaning process on the semiconductor structure, so as to remove a portion of the bonding adhesive located at the edge of the semiconductor structure.

[0016] Secondly, embodiments of this disclosure also provide a cleaning method for cleaning bonding adhesive, comprising: immersing a semiconductor structure in a first cleaning solution; performing a first cleaning treatment on the immersed semiconductor structure in a second cleaning solution; performing a second cleaning treatment on the semiconductor structure after the first cleaning treatment in a third cleaning solution; filtering the used third cleaning solution to obtain a recycled solution; wherein the concentration of the recycled solution is greater than or equal to 90% of the concentration of the third cleaning solution, and the mass proportion of bonding adhesive in the recycled solution is less than or equal to 3%; and replenishing the first cleaning solution and / or the second cleaning solution with the recycled solution.

[0017] In some embodiments, the cleaning method further includes: mixing the second cleaning liquid and the cleaning gas to obtain a two-fluid mixture; and performing a first cleaning treatment on the immersed semiconductor structure using the second cleaning liquid, including: performing a first cleaning treatment on the immersed semiconductor structure using the two-fluid mixture.

[0018] This disclosure provides a cleaning apparatus and method for cleaning bonding adhesive. The cleaning apparatus includes: a cleaning chamber for immersing a semiconductor structure in a first cleaning solution, performing a first cleaning treatment on the immersed semiconductor structure in a second cleaning solution, and performing a second cleaning treatment on the semiconductor structure in a third cleaning solution to remove bonding adhesive from the surface of the semiconductor structure; a recovery assembly for filtering the third cleaning solution discharged from the cleaning chamber to obtain a recovery solution; the concentration of the recovery solution is greater than or equal to 90% of the concentration of the third cleaning solution, and the mass proportion of bonding adhesive in the recovery solution is less than or equal to 3%; and a first supply assembly connected to the... The recovery assembly and the cleaning chamber are used to deliver the recovered liquid to the cleaning chamber to replenish the first cleaning liquid and / or the second cleaning liquid; the recovery assembly includes: a first liquid level monitoring component for detecting the liquid level height within the recovery assembly; wherein, when the liquid level height within the recovery assembly is greater than a first preset height, the recovery assembly is used to deliver the recovered liquid to the first liquid supply assembly; the cleaning device is used to discharge the recovered liquid within the recovery assembly at preset intervals; and / or, when the liquid level height within the recovery assembly is less than or equal to the first preset height, the cleaning device is used to discharge the recovered liquid within the recovery assembly. This embodiment of the invention accurately identifies the contamination level of waste liquid at different stages of the cleaning process, and specifically recycles the third cleaning liquid with a lower contamination level. The recycled liquid is then used in the immersion treatment and the first cleaning treatment, where the purity requirements of the cleaning liquid are not high, thus achieving the recycling of the cleaning liquid and reducing the amount of cleaning liquid required in the semiconductor structure cleaning process, thereby reducing the manufacturing cost of the semiconductor structure. This embodiment of the invention also reduces the time spent transporting the semiconductor structure between different chambers by sequentially performing immersion treatment, the first cleaning treatment, and the second cleaning treatment in the same cleaning chamber, thereby shortening the process cycle for cleaning the bonding adhesive. Furthermore, this embodiment of the invention uses a first liquid level monitoring component to detect the liquid level height in the recycling component. When the liquid level height in the recycling component is greater than a first preset height, the recycling component uses… The device supplies recycled liquid to the first liquid supply component; when the liquid level in the recycling component is less than or equal to a first preset height, the recycling component stops supplying recycled liquid to the first liquid supply component, thereby avoiding the supply of recycled liquid with a high proportion of bonding adhesive at the bottom of the recycling component to the first liquid supply component, ensuring the cleaning effect of the semiconductor structure during immersion treatment and / or the first cleaning treatment; the embodiments of this disclosure also periodically discharge the recycled liquid in the recycling component; and / or, when the liquid level in the recycling component is less than or equal to the first preset height, the cleaning device is used to discharge the recycled liquid in the recycling component, which can discharge the recycled liquid containing a large amount of bonding adhesive accumulated at the bottom of the recycling component, reducing the accumulation of bonding adhesive at the bottom of the recycling component, and avoiding the replenishment of recycled liquid with a high proportion of bonding adhesive to the first cleaning liquid and / or the second cleaning liquid. Attached Figure Description

[0019] Figure 1 A schematic diagram of a semiconductor structure at various stages provided in the embodiments of this disclosure; Figure 2 A schematic diagram of the structure of an exemplary cleaning device provided in an embodiment of this disclosure; Figure 3 This is a schematic diagram of the structure of an exemplary second filter component provided in an embodiment of the present disclosure; Figure 4 This is a schematic diagram illustrating the steps of a cleaning method for cleaning bonding adhesive, provided in an embodiment of this disclosure. Detailed Implementation

[0020] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0021] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure may be practiced without one or more of these details. In other instances, to avoid confusion with this disclosure, certain technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0022] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0023] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0024] Spatial relation terms such as “below,” “under,” “below,” “below,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0025] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. When used herein, the singular forms “a,” “an,” and “ / the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of features, integers, steps, operations, elements, and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0026] To fully understand this disclosure, detailed steps and structures will be presented in the following description to illustrate the technical solutions of this disclosure. Preferred embodiments of this disclosure are described in detail below; however, other embodiments may also be implemented in addition to these detailed descriptions.

[0027] Figure 1 Schematic diagrams of the semiconductor structure provided in embodiments of this disclosure at various stages. (See reference...) Figure 1 In Figure (a), the semiconductor structure 101 and the substrate 102 are bonded together via a bonding layer 103. The bonding layer 103 can be a bonding adhesive, and the material of the bonding layer 103 includes, but is not limited to, heat-curing adhesives, ultraviolet light-curing adhesives, heat-decomposing adhesives, or laser-decomposing adhesives. (See reference...) Figure 1 Figure (b) shows the debonding process performed on the semiconductor structure 101 and the substrate 102. Here, the remaining bonding layer on the semiconductor structure 101 is called the first residual layer 104, and the remaining bonding layer on the substrate 102 is called the second residual layer 105. It should be noted that the debonding process can be selected based on the material of the bonding layer 103; for example, it can be processed by light, heat, or chemical reactions. (See reference...) Figure 1 Figures (c) and (d) in the related technology show that the semiconductor structure is subjected to multiple rinsing processes by a cleaning device to remove the first residual layer 104.

[0028] The cleaning device uses a cleaning solution containing cleaning agent to rinse the semiconductor structure multiple times, and then discharges the used cleaning solution (waste liquid), resulting in a high manufacturing cost for each semiconductor structure.

[0029] In view of this, embodiments of the present disclosure provide a cleaning apparatus and a cleaning method for cleaning bonding adhesive.

[0030] Figure 2 This is a schematic diagram of an exemplary cleaning apparatus provided in an embodiment of this disclosure. (Refer to...) Figure 2The cleaning apparatus includes: a cleaning chamber for immersing a semiconductor structure in a first cleaning solution, performing a first cleaning process on the immersed semiconductor structure using a second cleaning solution, and performing a second cleaning process on the semiconductor structure after the first cleaning process using a third cleaning solution to remove bonding adhesive from the surface of the semiconductor structure; a recovery component for filtering the third cleaning solution discharged from the cleaning chamber to obtain a recovery solution; the concentration of the recovery solution is greater than or equal to 90% of the concentration of the third cleaning solution, and the mass proportion of bonding adhesive in the recovery solution is less than or equal to 3%; a first supply component connecting the recovery component and the cleaning chamber for supplying the recovery solution to the cleaning chamber to replenish the first cleaning solution and / or the second cleaning solution; the recovery component includes: a first liquid level monitoring component for detecting the liquid level height in the recovery component; wherein, when the liquid level height in the recovery component is greater than a first preset height, the recovery component supplies the recovery solution to the first supply component; the cleaning apparatus discharges the recovery solution in the recovery component at preset intervals; and / or, when the liquid level height in the recovery component is less than or equal to the first preset height, the cleaning apparatus discharges the recovery solution in the recovery component.

[0031] Traditional solutions treat "cleaning waste liquid" as a homogeneous, highly polluted whole, discharging it as a whole. However, this embodiment accurately identifies the pollution level of the waste liquid at different stages of the cleaning process, selectively recovering the third cleaning liquid with lower pollution levels. The recovered liquid is then used in immersion and first cleaning processes where purity requirements are less stringent, achieving recycling of the cleaning liquid and reducing the amount of cleaning liquid required in the semiconductor structure cleaning process, thereby reducing the manufacturing cost of the semiconductor structure. This embodiment also reduces the time spent transporting the semiconductor structure between different chambers by sequentially performing immersion, first, and second cleaning processes within the same cleaning chamber, thus shortening the process cycle for cleaning the bonding adhesive. Furthermore, this embodiment uses a first liquid level monitoring component to detect the liquid level height within the recovery assembly. When the liquid level in the recycling component is greater than the first preset height, the recycling component is used to deliver the recycled liquid to the first liquid supply component. When the liquid level in the recycling component is less than or equal to the first preset height, the recycling component stops delivering the recycled liquid to the first liquid supply component, thereby avoiding the delivery of recycled liquid with a high proportion of bonding adhesive from the bottom of the recycling component to the first liquid supply component, ensuring the cleaning effect of the semiconductor structure during immersion treatment and / or the first cleaning treatment. This embodiment of the present disclosure also periodically discharges the recycled liquid in the recycling component; and / or, when the liquid level in the recycling component is less than or equal to the first preset height, the cleaning device is used to discharge the recycled liquid in the recycling component, which can discharge the recycled liquid containing a large amount of bonding adhesive accumulated at the bottom of the recycling component, reducing the amount of bonding adhesive accumulated at the bottom of the recycling component, and avoiding the replenishment of recycled liquid with a high proportion of bonding adhesive to the first cleaning liquid and / or the second cleaning liquid.

[0032] In some embodiments, the cleaning chamber includes a reaction chamber and a cleaning component disposed within the reaction chamber. It should be noted that the cleaning apparatus provided in this disclosure may include at least one cleaning chamber, with different cleaning chambers used for cleaning different semiconductor structures. Figure 2 For ease of description, only one cleaning chamber is shown in the diagram.

[0033] In some embodiments, during the immersion treatment, the first cleaning treatment, and the second cleaning treatment, the cleaning solution applies a force greater than the force applied to the semiconductor structure on the first residual layer 104, thereby peeling off the first residual layer 104 while avoiding damage to the patterns on the semiconductor structure. Specifically, the direction of the cleaning solution spray can be controlled so that the force applied by the cleaning solution on the first residual layer 104 is greater than the force applied to the semiconductor structure.

[0034] In some embodiments, the recovery liquid stored in the recovery component contains trace amounts of bonding adhesive. After prolonged sedimentation, the bonding adhesive in the recovery liquid at heights less than or equal to a first preset height has a higher mass proportion, for example, the mass proportion of bonding adhesive in this portion of the recovery liquid is greater than or equal to a preset threshold. Therefore, the liquid level in the recovery component can be detected by a first liquid level monitoring component. When the liquid level in the recovery component is greater than the first preset height, the recovery component supplies recovery liquid to the first liquid supply component; when the liquid level in the recovery component is less than or equal to the first preset height, the recovery component stops supplying recovery liquid to the first liquid supply component, thereby preventing the supply of recovery liquid with a high proportion of bonding adhesive from the bottom layer of the recovery component to the first liquid supply component, ensuring the cleaning effect of the semiconductor structure during immersion treatment and / or the first cleaning treatment. Here, the value of the first preset height can be set according to requirements; for example, the first preset height can be 1 cm; the preset threshold can be, for example, 3%, 2.5%, or 2%.

[0035] In some embodiments, the first liquid level monitoring component may be any one of a float-type liquid level sensor, a hydrostatic liquid level sensor, an ultrasonic liquid level sensor, a photoelectric liquid level sensor, etc. This disclosure does not impose any restrictions on the type of the first liquid level monitoring component.

[0036] In some embodiments, the cleaning component can immerse the semiconductor structure inside the reaction chamber using a first nozzle SR1. Here, the first nozzle SR1 is used to spray a first cleaning solution. Specifically, the first nozzle SR1 is used to uniformly apply the first cleaning solution onto the first residual layer 104. The cleaning chamber ensures that the first residual layer 104 is in full contact with the first cleaning solution through static immersion and / or low-speed rotation (light shaking), causing the first residual layer 104 to undergo preliminary softening and dissolution, that is, the first residual layer 104 softens and partially dissolves in the first cleaning solution.

[0037] In some embodiments, when immersing a semiconductor structure, the parameters used when the first nozzle SR1 sprays the first cleaning solution are as follows: the spraying time ranges from 90s to 150s, and the spraying time of the first cleaning solution can be, for example, 120s; the flow rate is from 80ml / min to 120ml / min, and the flow rate of the first cleaning solution can be, for example, 100ml / min; the flow rate is from 150ml to 250ml, and the flow rate of the first cleaning solution can be, for example, 200ml.

[0038] In some embodiments, the cleaning component can perform a first cleaning process on the semiconductor structure inside the reaction chamber using a second nozzle SR2 and a suction nozzle. Here, the second nozzle SR2 is used to spray a second cleaning solution. Specifically, the second nozzle SR2 is used to spray the second cleaning solution onto the first residual layer 104 while the semiconductor structure is rotating at high speed, dissolving the first residual layer 104 and driving it towards other areas of the semiconductor structure surface, that is, gradually separating the first residual layer 104 from the semiconductor structure surface, which can be referred to as removing adhesive from the first residual layer 104. While removing adhesive from the first residual layer 104, the suction nozzle can be used to gradually remove the first residual layer 104 that has separated from the semiconductor structure, that is, removing adhesive from the first residual layer 104. Here, the first cleaning process includes adhesive removal and adhesive removal.

[0039] In some embodiments, since the recovered liquid can be used to replenish the first cleaning liquid and / or the second cleaning liquid, the same nozzle (e.g., the first nozzle SR1 or the second nozzle SR2) can be used to perform the immersion treatment and the first cleaning treatment.

[0040] It should be noted that low-speed and high-speed rotation of the semiconductor structure can be achieved by using the rotation drive component within the cleaning chamber.

[0041] In some embodiments, the cleaning chamber is further configured to trim the bonding adhesive on the semiconductor structure before performing a first cleaning process on the semiconductor structure, so as to remove a portion of the bonding adhesive located at the edge of the semiconductor structure.

[0042] In some embodiments, because the first residual layer 104 (bonding adhesive) attached to the edge of the semiconductor structure is thicker and has a higher degree of curing, it has stronger adhesion. Therefore, before performing the first cleaning or soaking treatment on the first residual layer 104, the bonding adhesive (first residual layer 104) can be trimmed in the reaction chamber, i.e., the edges of the semiconductor structure and the first residual layer 104 can be trimmed by mechanical cutting / laser cutting. The trimming treatment can not only remove defects at the edge of the semiconductor structure, but also remove the bonding adhesive accumulated at the edge of the semiconductor structure.

[0043] This embodiment of the invention removes some of the bonding adhesive that is difficult to remove from the edges of the semiconductor structure by shaving the bonding adhesive on the edges. This greatly improves the removal efficiency of the adhesive residue at the edges and prevents adhesive debris from falling off and becoming a source of particulate matter pollution during the cleaning process (e.g., when the adhesive is being rolled out). At the same time, it opens a lateral penetration path for the cleaning solution, thereby ensuring the cleaning effect of the first cleaning treatment, or ensuring the cleaning effect of the immersion treatment and the first cleaning treatment.

[0044] In some embodiments, when performing a first cleaning process on a semiconductor structure, the parameters used when the second nozzle SR2 sprays the second cleaning fluid are as follows: the spraying time ranges from 90s to 150s, and the spraying time of the second cleaning fluid can be, for example, 120s; the flow rate is from 80ml / min to 120ml / min, and the flow rate of the second cleaning fluid can be, for example, 100ml / min; the flow rate is from 150ml to 250ml, and the flow rate of the second cleaning fluid can be, for example, 200ml.

[0045] In some embodiments, after the first cleaning process, the semiconductor structure can be spun dry by rotating it at high speed to separate the semiconductor structure from the residual second cleaning solution and the bonding adhesive dissolved in the second cleaning solution.

[0046] In some embodiments, after the first cleaning process, the small amount of bonding adhesive remaining on the surface of the semiconductor structure is in the form of solid particles or fragments.

[0047] In some embodiments, the cleaning component may use a third nozzle SR3 within the reaction chamber to perform a second cleaning treatment on the semiconductor structure. Here, the third nozzle SR3 is used to spray a third cleaning solution, specifically spraying the third cleaning solution onto the semiconductor structure to rinse away any remaining bonding adhesive on the surface of the semiconductor structure after the first cleaning treatment.

[0048] In some embodiments, when performing a second cleaning process on a semiconductor structure, the parameters used when the third nozzle SR3 sprays the third cleaning fluid are as follows: the spraying time ranges from 150s to 330s, and the spraying time of the third cleaning fluid can be, for example, 240s; the flow rate is from 80ml / min to 120ml / min, and the flow rate of the third cleaning fluid can be, for example, 100ml / min; the flow rate is from 300ml to 500ml, and the flow rate of the third cleaning fluid can be, for example, 400ml.

[0049] In some embodiments, the first cleaning solution, the second cleaning solution, and the second cleaning treatment are primarily used to dissolve and remove residual bonding adhesive. During the cleaning process, commonly used chemical reagents for removing organic polymers (such as bonding adhesive) include a mixture of sulfuric acid and hydrogen peroxide (SPM), organic solvents (such as N-methylpyrrolidone NMP or dimethyl sulfoxide DMSO), or specialized photoresist stripping solutions. Because the contact area between the first residual layer 104 and the first / second cleaning solution is large during the immersion treatment and the first cleaning treatment, the first residual layer 104 dissolves rapidly in the first and second cleaning solutions, resulting in a high mass proportion of bonding adhesive in the used first and second cleaning solutions. Since the first residual layer 104 is substantially removed during the immersion treatment and the first cleaning treatment, only a small amount of the first residual layer 104 remaining on the semiconductor structure surface is removed during the second cleaning treatment. Therefore, the third cleaning solution can be used in the final rinsing step to remove residues after the immersion treatment and the first cleaning treatment. Consequently, the mass proportion of bonding adhesive in the used first and second cleaning solutions is high, while the mass proportion of bonding adhesive in the used third cleaning solution is low. The mass ratio of bonding adhesive in the used first and second cleaning solutions is difficult to reduce below a preset threshold. However, filtering the used third cleaning solution can reduce the mass ratio of bonding adhesive to below the preset threshold (e.g., 3%), yielding a recycled solution. Using this recycled solution, with a bonding adhesive mass ratio below the preset threshold, to replenish the first and / or second cleaning solutions ensures the cleaning effect of the semiconductor structure during immersion and / or the first cleaning process. Therefore, in this embodiment, by selectively recovering the used third cleaning solution and using it to replenish the first and / or second cleaning solutions, not only can the cleaning effect of the semiconductor structure be guaranteed and the amount of cleaning solution required during the semiconductor structure cleaning process be reduced, but the time and cost required for filtration can also be kept within a reasonable range.

[0050] Here, since most of the bonding adhesive in the used third cleaning solution is in the form of solid particles or fragments, with only a small portion dissolved in the third cleaning solution, most of the solid bonding adhesive in the used third cleaning solution can be removed by filtration.

[0051] In some embodiments, the concentration of the recovered solution is sufficient to meet the requirements for immersion treatment and first cleaning treatment of the semiconductor structure. Here, the concentration of the recovered solution is less than the concentration of the third cleaning solution, and the concentration of the recovered solution may be, for example, 92%, 94%, 96%, or 98% of the concentration of the third cleaning solution.

[0052] It should be noted that, in the embodiments of this disclosure, the concentration of the cleaning solution or the concentration of the recovered solution refers to the concentration of the stock solution used for cleaning the bonding adhesive. Here, the third cleaning solution can be, for example, the stock solution used for cleaning the bonding adhesive, and the concentration of the third cleaning solution can be considered as 100%.

[0053] In some embodiments, the cleaning chamber can also be used to dry the semiconductor structure after the second cleaning process using a desiccant (e.g., IPA gas or IPA liquid).

[0054] In some embodiments, the cleaning component may further include a fourth nozzle SR4, which can be used within the reaction chamber to dry the semiconductor structure. Here, the fourth nozzle SR4 is used to spray a desiccant. Taking IPA as an example, the fourth nozzle SR4 is specifically used to spray IPA onto the semiconductor structure, causing the residual cleaning liquid (specifically, the third cleaning liquid) on the surface of the semiconductor structure to dissolve in the IPA, forming an IPA liquid film on the surface of the semiconductor structure. The cleaning device then controls the temperature inside the reaction chamber or blows high-temperature gas (such as nitrogen gas with a temperature greater than or equal to 82.5°C) onto the surface of the IPA liquid film to cause the IPA liquid film to evaporate, thus achieving the drying process. In another example, the cleaning chamber may also use DI water (deionized water) as a desiccant to dry the semiconductor structure.

[0055] In some embodiments, when drying a semiconductor structure, the parameters used when the fourth nozzle SR4 sprays the desiccant are as follows: the spraying time ranges from 50s to 90s, and the spraying time of the desiccant can be, for example, 70s; the flow rate is from 400ml / min to 600ml / min, and the flow rate of the desiccant can be, for example, 500ml / min; the flow rate is from 350ml to 650ml, and the flow rate of the desiccant can be, for example, 540ml.

[0056] In this embodiment, the amount of the third cleaning solution used during the second cleaning process is substantially equal to the sum of the amounts of the first cleaning solution used during the soaking process and the second cleaning solution used during the first cleaning process. That is, the recovered solution obtained from the used third cleaning solution is sufficient to supply the first cleaning solution required during the soaking process and the second cleaning solution required during the first cleaning process. Compared to the case where the third cleaning solution is used during the soaking process, the first cleaning process, and the second cleaning process, this embodiment can save approximately 50% of the third cleaning solution.

[0057] In some embodiments, the cleaning component may include at least one robotic arm, and components such as nozzles and suction nozzles used during cleaning may be mounted on the robotic arm. This disclosure integrates steps such as soaking, edge trimming, adhesive removal, and adhesive suction within the same cleaning chamber, and utilizes a recycling component to reduce semiconductor structure transport time while achieving the recycling of the cleaning solution, thereby reducing costs and shortening the overall process cycle.

[0058] In some embodiments, the first liquid supply assembly includes: a first pipeline 221, connecting the recovery assembly and the cleaning chamber, for delivering the recovered liquid to the cleaning chamber; and a delivery pump 222, disposed on the first pipeline 221, for adjusting the pressure value within the first pipeline 221; wherein, when the recovery assembly delivers the recovered liquid to the cleaning chamber, the delivery pump 222 is specifically used to control the pressure value within the first pipeline 221 to be greater than or equal to a preset pressure.

[0059] In some embodiments, the transfer pump 222 is also used to pump the recovered liquid from the recovery assembly into the first line 221.

[0060] In some embodiments, the input end of the first pipeline 221 is connected to the recovery assembly, and the output end of the first pipeline 221 is connected to the cleaning chamber. A delivery pump 222 is used to regulate the pressure within the first pipeline 221, ensuring that the pressure is greater than or equal to a preset pressure. This guarantees that the pressure within the first pipeline 221 can deliver the recovered liquid to the cleaning chamber, preventing any disruption in the cleaning liquid supply during cleaning operations and achieving stable liquid supply.

[0061] In some embodiments, a first recovery liquid control valve 301 is provided on a first pipeline 221 located at the input end of the delivery pump 222. The inlet of the first recovery liquid control valve 301 is connected to the recovery assembly through the first pipeline 221, and the outlet of the first recovery liquid control valve 301 is connected to the input end of the delivery pump 222 through the first pipeline 221. The first recovery liquid control valve 301 is used to control the delivery state of the recovery liquid. When the first recovery liquid control valve 301 is open, the recovery liquid can be delivered to the input end of the delivery pump 222; when the first recovery liquid control valve 301 is closed, the delivery of the recovery liquid to the input end of the delivery pump 222 stops.

[0062] In some embodiments, a flow meter 223 is provided on the first pipeline 221 located at the output end of the delivery pump 222. The flow meter 223 is used to detect and adjust the flow rate of the recovered liquid delivered by the first pipeline 221; to ensure that the amount of recovered liquid delivered to the cleaning chamber is accurate and controllable, and to ensure process repeatability.

[0063] In some embodiments, the first liquid supply assembly further includes: a first storage chamber disposed on a first pipeline 221 on the side of the delivery pump 222 away from the recovery assembly, for storing a first cleaning fluid and a second cleaning fluid; and a second liquid level monitoring component for monitoring the liquid level in the first storage chamber; wherein, when the liquid level in the first storage chamber is less than or equal to a second preset height, the recovery assembly is used to deliver recovery fluid to the first liquid supply assembly.

[0064] like Figure 2 As shown, the first storage chamber may include a first sub-storage chamber 224a and a second sub-storage chamber 224b. The recovered liquid delivered to the first sub-storage chamber 224a by the recovery component is used to replenish the first cleaning liquid, and the recovered liquid delivered to the second sub-storage chamber 224b by the recovery component is used to replenish the second cleaning liquid. Corresponding second liquid level monitoring components are respectively installed in the first sub-storage chamber 224a and the second sub-storage chamber 224b. The first pipeline 221 may include a first branch and a second branch respectively connected to the first sub-storage chamber 224a and the second sub-storage chamber 224b. A second recovered liquid control valve 302 and a third recovered liquid control valve 303 are respectively installed on the first branch and the second branch. It should be noted that the first cleaning liquid and the second cleaning liquid can be stored in the same storage chamber or in separate storage chambers.

[0065] In one example, when the liquid level in the first sub-storage chamber 224a is less than or equal to the second preset height, the first recovery liquid control valve 301 and the second recovery liquid control valve 302 are opened, so that the recovery component can deliver recovery liquid to the first sub-storage chamber 224a in the first liquid supply component to replenish the first cleaning liquid; when the liquid level in the second sub-storage chamber 224b is less than or equal to the second preset height, the first recovery liquid control valve 301 and the third recovery liquid control valve 303 are opened, so that the recovery component can deliver recovery liquid to the second sub-storage chamber 224b in the first liquid supply component to replenish the second cleaning liquid.

[0066] In this embodiment of the present disclosure, intelligent supply of the recovered liquid can be achieved by replenishing the recovered liquid according to the liquid level in the first storage chamber.

[0067] like Figure 2 As shown, the first pipeline 221 also includes a third branch and a fourth recovery liquid control valve 306 disposed on the third branch. The fourth recovery liquid control valve 306 opens when the cleaning device discharges the recovery liquid from the recovery assembly. It can be understood that the liquid level in the recovery assembly refers to the liquid level in the second storage chamber 211.

[0068] like Figure 2As shown, the first pipeline 221 includes a fourth branch and a fifth branch, respectively connected to two inlets of the first recovery liquid control valve 301. The distance between the inlet of the fourth branch and the bottom of the second storage chamber 211 is greater than a first preset height. When the recovery liquid is delivered to the first supply assembly, the first recovery liquid control valve 301 opens the passage between the inlet and outlet of the fourth branch, thereby preventing the recovery liquid, which is located at the bottom of the recovery assembly and has a high proportion of bonding adhesive, from being delivered to the first supply assembly, ensuring the cleaning effect of the semiconductor structure during immersion treatment and / or the first cleaning treatment. The distance between the inlet of the fifth branch and the bottom of the second storage chamber 211 is less than or equal to the first preset height. When the recovery liquid is delivered to the waste discharge area, the first recovery liquid control valve 301 opens the passage between the inlet and outlet of the fifth branch, thereby discharging the recovery liquid, which is located at the bottom of the recovery assembly and has a high proportion of bonding adhesive, preventing excessive accumulation of bonding adhesive at the bottom of the recovery assembly.

[0069] In this embodiment of the present disclosure, the cleaning device is used to discharge the recycled liquid in the recycling component periodically; and / or, when the liquid level in the recycling component is less than or equal to a first preset height, the cleaning device is used to discharge the recycled liquid in the recycling component, which can discharge the recycled liquid containing a large amount of bonding adhesive accumulated at the bottom of the recycling component, reduce the amount of bonding adhesive accumulated at the bottom of the recycling component, and avoid adding the recycled liquid with a high proportion of bonding adhesive to the first cleaning liquid and / or the second cleaning liquid.

[0070] In some embodiments, the first liquid supply assembly further includes: a pressure monitoring component disposed in the first pipeline 221, used to monitor the pressure value in the first pipeline 221 and output a pressure signal corresponding to the pressure value; the delivery pump 222 is specifically used to adjust the pressure value in the first pipeline 221 according to the pressure signal.

[0071] In some embodiments, when the pressure monitoring component is a pressure switch, the pressure monitoring component is used to output a low-pressure alarm signal when the pressure value in the first pipeline 221 is less than a preset pressure, and the delivery pump 222 is used to increase the pressure value in the first pipeline 221 according to the low-pressure alarm signal, so that the pressure value in the first pipeline 221 is greater than or equal to the preset pressure. It should be noted that the pressure monitoring component can be any type of pressure sensor, and this disclosure does not impose any limitations on it.

[0072] In some embodiments, the first liquid supply assembly further includes a first filter element 225 disposed in the first pipeline 221 for filtering the recovered liquid so that the mass ratio of the bonding adhesive in the recovered liquid is less than or equal to 1%.

[0073] In some embodiments, the first filter element 225 is used to filter the recovered liquid, reducing the mass proportion of the bonding adhesive in the recovered liquid. For example, the mass proportion of the bonding adhesive in the recovered liquid can be reduced to 1%, further improving the purity of the recovered liquid and thereby enhancing the effect of the soaking treatment and / or the first cleaning treatment. The first filter element 225 may be, for example, a filter screen or a filter cartridge.

[0074] In some embodiments, the first filter element 225 may be replaced periodically as needed to ensure a stable flow rate when the first pipeline 221 delivers the recovered liquid.

[0075] In some embodiments, the cleaning apparatus further includes: a gas supply component connected to the cleaning chamber for delivering cleaning gas to the cleaning chamber; the cleaning chamber includes a mixing component for mixing the second cleaning liquid and the cleaning gas to obtain a two-fluid mixture; the cleaning chamber is used to perform a first cleaning process on the immersed semiconductor structure using the two-fluid mixture.

[0076] In some embodiments, the mixing component may include a second nozzle SR2, which can be used to mix a second cleaning liquid and a cleaning gas to obtain a two-fluid mixture, and the cleaning chamber is used to perform a first cleaning process on the semiconductor structure after immersion using the two-fluid mixture.

[0077] In some embodiments, the gas supply assembly includes a third conduit 231 and a third storage chamber 232 disposed on the third conduit 231. The third conduit 231 is used to deliver cleaning gas to the cleaning chamber, and the third storage chamber 232 is used to store the cleaning gas. Here, the gas supply assembly also includes a second supply system 233, which is used to supply cleaning gas to the third storage chamber 232.

[0078] In this embodiment of the disclosure, a two-fluid process is used to perform a first cleaning treatment on the semiconductor structure. Compared with pure liquid, it has a stronger physical impact force, which can more effectively remove stubborn colloids in the semiconductor structure, such as on the sidewalls or complex structures, and reduce particulate contamination.

[0079] In some embodiments, the third conduit 231 is specifically used to deliver cleaning gas to the second nozzle SR2 during the first cleaning process.

[0080] like Figure 2As shown, the first liquid supply assembly further includes a second cleaning fluid control valve 304 disposed on the first pipeline 221, which is located near the second nozzle SR2 in the cleaning chamber. The gas supply assembly further includes a second cleaning gas control valve 305 disposed on the third pipeline 231, which is located near the second nozzle SR2 in the cleaning chamber. Here, when the second cleaning fluid and cleaning gas are supplied to the cleaning chamber, the second cleaning fluid control valve 304 and the second cleaning gas control valve 305 are opened. The second nozzle SR2 is located after the outlet of the second cleaning fluid control valve 304 and the outlet of the second cleaning gas control valve 305.

[0081] In some embodiments, the mixing component includes a two-fluid nozzle with a venturi structure and a pulse generator; the two-fluid nozzle is used to mix the second cleaning fluid and the cleaning gas; the pulse generator is connected to the inlet of the venturi structure and is used to apply pulse pressure to the interior of the venturi structure.

[0082] In some embodiments, the Venturi structure may include a constriction section (the inlet of the Venturi structure), a throat, and a diffuser section (the outlet of the Venturi structure) connected in sequence. The size of the constriction section gradually decreases along the direction towards the throat, and the size of the diffuser section also gradually decreases along the direction towards the throat. That is, the Venturi structure has a streamlined structure that is thick at both ends and thin in the middle (throat). This causes the flow velocity of the two fluids in the Venturi structure to first increase and then decrease, and the pressure to first decrease and then increase. In other words, a low-pressure zone is established at the throat, allowing the two fluids to continuously precipitate microbubbles as "cavitation nuclei," thereby enhancing the cleaning effect of the first cleaning treatment.

[0083] In some embodiments, the bubbles, microbubbles, and cavitation nuclei in this disclosure may have similar functions, which are beneficial to improving the cleaning effect of the bonding adhesive on the sidewalls of complex three-dimensional structures or high aspect ratio structures.

[0084] In some embodiments, the pulse generator can apply low-frequency or high-frequency (e.g., 10Hz to 1kHz) pulse pressure to the interior of the Venturi structure, causing periodic changes in the jet pressure and velocity of the two fluids within the Venturi structure. This further enhances the jetting effect (jet pressure and velocity) of the Venturi structure and improves the generation efficiency of microbubbles in the two fluids. Simultaneously, the pulse pressure can induce rapid bubble growth and collapse. By adjusting the frequency and phase of the pulse pressure, bubble collapse is made to occur primarily at the moment the jet impacts the semiconductor structure, achieving energy focusing. This not only enables controllable cavitation but also further enhances the cleaning effect of the first cleaning process. Compared to continuous high-pressure modes, it also has lower energy consumption and requires less modification to existing structures.

[0085] In some embodiments, the cleaning apparatus further includes a high-frequency ultrasonic transducer, which is positioned at a distance less than a preset distance from the semiconductor structure; the high-frequency ultrasonic transducer is used to convert electrical energy into high-frequency ultrasonic signals and transmit them to the surface of the semiconductor structure.

[0086] In some embodiments, a high-frequency ultrasonic transducer generates a high-frequency ultrasonic signal, which (vibration) is directly coupled into a cleaning solution (e.g., at least one of a first, second, and third cleaning solution) on the surface of the semiconductor structure. This creates periodically alternating positive pressure (compression) and negative pressure (sparseness) phases in the cleaning solution, resulting in a cavitation effect on the surface of the first residual layer 104, generating a large number of micron-sized cavitation bubbles, further enhancing the cleaning effect of each step. Here, the high-frequency ultrasonic transducer ensures that the cavitation effect occurs closest to the bonding adhesive, resulting in high energy utilization efficiency; furthermore, the ultrasonic waves and the jet (cleaning solution) can be controlled separately, offering great flexibility. The frequency of the high-frequency ultrasonic signal can be, for example, 40kHz, 80kHz, or 1MHz.

[0087] In some embodiments, when a two-fluid jet is used in the first cleaning process, the two-fluid jet can not only clean the bonding adhesive, but also continuously provide fresh liquid to the area where ultrasonic waves generate cavitation and remove the products of the cavitation reaction, thus ensuring the cleanliness of the semiconductor structure surface.

[0088] In some embodiments, the cleaning apparatus further includes: a microcapsule supply component connected to a recycling component for supplying microcapsules to the recycling component to obtain a recycling liquid containing microcapsules; a cleaning chamber for immersing a semiconductor structure in a first cleaning liquid containing microcapsules, and / or for performing a first cleaning treatment on the immersed semiconductor structure in a second cleaning liquid containing microcapsules; the microcapsules rupture during the immersion treatment and / or during the first cleaning treatment and generate microjets on the surface of the semiconductor structure.

[0089] In some embodiments, the microcapsule may include a shell and a substance encapsulated by the shell (e.g., a low-boiling-point solvent or a substance that can react with the cleaning fluid). During transport within the cleaning apparatus, the shell of the microcapsule remains intact. When the microcapsule impacts the semiconductor structure with the cleaning fluid, it is subjected to mechanical compression and localized heating, causing the shell to rupture. The internal substance instantly vaporizes or undergoes a violent reaction, generating a bubble that grows outward from the surface of the semiconductor structure and then ruptures asymmetrically under the pressure of the surrounding cleaning fluid, producing microjets pointing towards the surface of the first residual layer 104, thereby enhancing the cleaning effect.

[0090] In some embodiments, the shell of the microcapsule may comprise a nano / micron-sized polymer material, and the substance within the microcapsule may comprise, but is not limited to, pentane.

[0091] In some embodiments, the semiconductor structure may include microstructures such as micrometer-scale bumps, pits, or hydrophobic textures. When the cleaning fluid is sprayed onto the microstructure, the microstructure can capture air bubbles in the cleaning fluid, disrupt the symmetry of the bubbles, induce the bubbles to generate microjets with stronger directionality (towards the bonding adhesive), and the microstructure can provide additional nucleation sites to promote cavitation effects, thereby achieving the cleaning of precision structures (such as semiconductor wafers, MEMS devices, etc.).

[0092] In some embodiments, the recycling assembly includes: a second filter element for filtering the third cleaning fluid discharged from the cleaning chamber so that the mass ratio of the bonding adhesive in the recycled fluid is less than or equal to 3%; a second storage chamber 211 for storing the recycled fluid; and the second filter element is disposed in the second storage chamber 211.

[0093] Figure 3 This is a schematic diagram of an exemplary second filtration component provided in an embodiment of this disclosure. The second filtration component may include a sedimentation tank 401, a first filter screen 402, and a second filter screen 403. The mesh size of the first filter screen 402 is smaller than that of the second filter screen 403; for example, the first filter screen 402 is a 200-mesh screen, and the second filter screen is a 300-mesh screen. The used third cleaning solution first undergoes initial sedimentation of large-particle bonded adhesive in the sedimentation tank 401 through overflow, then undergoes coarse filtration of the bonded adhesive through the first filter screen 402, and finally undergoes fine filtration of the bonded adhesive through the second filter screen 403 to obtain a recovered solution.

[0094] In some embodiments, the recovery assembly includes a second conduit 212, which connects a cleaning chamber and a second storage chamber 211, for conveying a third cleaning fluid discharged from the cleaning chamber to the second storage chamber 211.

[0095] In some embodiments, the cleaning device further includes: a second liquid supply assembly connected to the cleaning chamber, used to deliver a third cleaning fluid to the cleaning chamber to replenish the third cleaning fluid; when the liquid level in the first liquid supply assembly is less than or equal to a third preset height, the second liquid supply assembly is also used to deliver the third cleaning fluid to the first liquid supply assembly to replenish the first cleaning fluid and / or the second cleaning fluid.

[0096] refer to Figure 2 The second liquid supply assembly includes a first supply system 241, which is used to supply a third cleaning liquid.

[0097] The second liquid supply assembly also includes a fourth conduit 242 and a fourth storage chamber 243 disposed on the fourth conduit 242. The fourth conduit 242 is connected to the second cleaning chamber SR3 and is used to deliver the third cleaning fluid to the second cleaning chamber SR3. The fourth storage chamber 243 is used to store the third cleaning fluid. The first supply system 241 is used to deliver the third cleaning fluid to the fourth storage chamber 243. The first supply system 241 can also be used to deliver the third cleaning fluid to the first storage chamber to replenish the first cleaning fluid and / or the second cleaning fluid. It is understood that the first cleaning fluid may include the third cleaning fluid and / or the recovered fluid, and the second cleaning fluid may include the third cleaning fluid and / or the recovered fluid. Therefore, the concentration of the first cleaning fluid is greater than or equal to 90% of the concentration of the third cleaning fluid, and the concentration of the second cleaning fluid is greater than or equal to 90% of the concentration of the third cleaning fluid. Here, the concentrations of the first and second cleaning fluids may, for example, be 92%, 94%, 96%, 98%, or 100% of the concentration of the third cleaning fluid.

[0098] like Figure 2 As shown, the gas supply assembly is connected to the cleaning chamber and is used to deliver cleaning gas to the cleaning chamber.

[0099] The mixing component may further include a first nozzle SR1 and / or a third nozzle SR3. The first nozzle SR1 can be used to mix the first cleaning liquid and the cleaning gas to obtain a two-fluid mixture, and the cleaning chamber is used to immerse the semiconductor structure in the two-fluid mixture. The third nozzle SR3 can be used to mix the third cleaning liquid and the cleaning gas to obtain a two-fluid mixture, and the cleaning chamber is also used to perform a second cleaning process on the semiconductor structure after the first cleaning process using the two-fluid mixture.

[0100] In some embodiments, when at least one of the immersion treatment, the first cleaning treatment, and the second cleaning treatment uses two fluids, the two fluid jet can not only clean the bonding adhesive, but also continuously provide fresh liquid to the area where ultrasonic waves generate cavitation and remove the products of the cavitation reaction, thus ensuring the cleanliness of the semiconductor structure surface.

[0101] In some embodiments, the first nozzle SR1 and the third nozzle SR3 may include two-fluid nozzles with a venturi structure, and a pulse generator may apply pulse pressure to the interior of the venturi structure in the first nozzle SR1 and the third nozzle SR3.

[0102] In this embodiment of the disclosure, a two-fluid process is used to immerse and / or clean the semiconductor structure. Compared with pure liquid, this process has a stronger physical impact force, which can more effectively remove stubborn colloids from the semiconductor structure, such as those on the sidewalls or complex structures, and reduce particulate contamination.

[0103] In some embodiments, the third conduit 231 is specifically used to deliver cleaning gas to the first nozzle SR1 during the immersion treatment.

[0104] like Figure 2 As shown, the first liquid supply assembly further includes a first cleaning fluid control valve 307 disposed on the first pipeline 221, which is located near the first nozzle SR1 in the cleaning chamber; the gas supply assembly further includes a first cleaning gas control valve 309 disposed on the third pipeline 231, which is located near the first nozzle SR1 in the cleaning chamber. Here, when the first cleaning fluid and cleaning gas are supplied to the cleaning chamber, the first cleaning fluid control valve 307 and the first cleaning gas control valve 309 are opened; the first nozzle SR1 is located after the outlet of the first cleaning fluid control valve 307 and the outlet of the first cleaning gas control valve 309.

[0105] In this embodiment of the disclosure, the semiconductor structure is immersed in a two-fluid process, which is beneficial to improving the cleaning effect of the semiconductor structure.

[0106] In some embodiments, the third conduit 231 is specifically used to deliver cleaning gas to the third nozzle SR3 during the second cleaning process.

[0107] like Figure 2 As shown, the second liquid supply assembly also includes a third cleaning fluid control valve 308 disposed on the fourth pipeline 242, which is located near the third nozzle SR3 in the cleaning chamber; the gas supply assembly also includes a third cleaning gas control valve 310 disposed on the third pipeline 231, which is located near the third nozzle SR3 in the cleaning chamber. Here, when the third cleaning fluid and cleaning gas are supplied to the cleaning chamber, the third cleaning fluid control valve 308 and the third cleaning gas control valve 310 are opened; the third nozzle SR3 is located after the outlet of the third cleaning fluid control valve 308 and the outlet of the third cleaning gas control valve 310.

[0108] In this embodiment of the disclosure, a second cleaning process is performed on the semiconductor structure using two fluids, which is beneficial to improving the cleaning effect of the semiconductor structure.

[0109] In some embodiments, reference Figure 2The cleaning device also includes a fifth pipeline 251, which connects the waste discharge area and the cleaning chamber. The fifth pipeline 251 can be used to transport any one of the used first cleaning fluid, second cleaning fluid, third cleaning fluid, and volatile IPA to the waste discharge area for waste disposal. Specifically, the fifth pipeline 251 is used to transport the used first cleaning fluid to the waste discharge area for waste disposal; to transport the used second cleaning fluid to the waste discharge area for waste disposal; to transport the used third cleaning fluid to the waste discharge area for waste disposal when the liquid level in the recovery component (specifically the second storage chamber 211) is greater than or equal to a fourth preset height, thus avoiding excessive recovery liquid in the recovery component; and to transport the volatile IPA to the waste discharge area for waste disposal.

[0110] A discharge control valve 311 is installed on the fifth pipeline 251. The discharge control valve 311 opens when the cleaning chamber is being treated for waste discharge. The discharge control valve 311 is a three-way valve; its inlet is connected to the cleaning chamber, and its two outlets are connected to the waste discharge area and the second storage chamber 211, respectively. The discharge control valve 311 is used to transport any one of the first cleaning fluid, second cleaning fluid, third cleaning fluid, and volatile IPA discharged from the cleaning chamber to the waste discharge area for waste discharge treatment, or to transport the third cleaning fluid discharged from the cleaning chamber to the second storage chamber 211. Specifically, the discharge control valve 311 is used to transport the used third cleaning fluid to the waste discharge area for waste discharge treatment when the liquid level in the recovery component (specifically the second storage chamber 211) is greater than or equal to a fourth preset height; and to transport the used third cleaning fluid to the second storage chamber 211 when the liquid level in the recovery component (specifically the second storage chamber 211) is less than the fourth preset height.

[0111] In some embodiments, reference Figure 2 The cleaning apparatus also includes a desiccant supply assembly, which includes a sixth conduit 261 and a fifth storage chamber 262 disposed on the sixth conduit 261. The sixth conduit 261 connects to the cleaning chamber and is used to deliver desiccant to the cleaning chamber, while the fifth storage chamber 262 is used to store desiccant. The desiccant supply assembly also includes a desiccant control valve 312 disposed on the sixth conduit 261, which is located near the fourth nozzle SR4 in the cleaning chamber. Here, the desiccant supply assembly also includes a third supply system 263, which is used to supply desiccant to the fifth storage chamber 262.

[0112] In some embodiments, reference Figure 2The cleaning device also includes a first input control valve 313, a second input control valve 315, a third input control valve 317, a fourth input control valve 319, and a fifth input control valve 321, respectively disposed at the inlets of the first sub-storage chamber 224a, the second sub-storage chamber 224b, the third storage chamber 232, the fourth storage chamber 243, and the fifth storage chamber 262. When the first supply system 241 supplies the third cleaning fluid to the first sub-storage chamber 224a, the first input control valve 313 opens; when the first supply system 241 supplies the third cleaning fluid to the second sub-storage chamber 224b, the second input control valve 315 opens; when the first supply system 241 supplies the third cleaning fluid to the fourth storage chamber 243, the fourth input control valve 319 opens; when the second supply system 233 supplies cleaning gas to the third storage chamber 232, the third input control valve 317 opens; and when the third supply system 263 supplies desiccant to the fifth storage chamber 262, the fifth input control valve 321 opens.

[0113] refer to Figure 2 The cleaning device also includes a first output control valve 314, a second output control valve 316, a third output control valve 318, a fourth output control valve 320, and a fifth output control valve 322 respectively disposed at the outlets of the first sub-storage chamber 224a, the second sub-storage chamber 224b, the third storage chamber 232, the fourth storage chamber 243, and the fifth storage chamber 262. When the first liquid supply assembly delivers the first cleaning fluid to the cleaning chamber, the first output control valve 314 and the first cleaning fluid control valve 307 are opened; when the first liquid supply assembly delivers the second cleaning fluid to the cleaning chamber, the second output control valve 316 and the second cleaning fluid control valve 304 are opened; when the second liquid supply assembly delivers the third cleaning fluid to the cleaning chamber, the fourth output control valve 320 and the third cleaning fluid control valve 308 are opened; when the gas supply assembly delivers cleaning gas to the cleaning chamber, the third output control valve 318 and the first cleaning gas control valve 309 / second cleaning gas control valve 305 / third cleaning gas control valve 310 are opened; when the desiccant supply assembly delivers desiccant to the cleaning chamber, the fifth output control valve 322 and the desiccant control valve 312 are opened.

[0114] In some embodiments, the first input control valve 313 and the second input control valve 315 can be one-way valves to prevent the first and second cleaning fluids in the first chamber from flowing back and affecting the purity of the third cleaning fluid.

[0115] It should be noted that, Figure 2 The number and position of the multiple control valves shown in the diagram can be adjusted as needed, and this disclosure does not impose any specific restrictions on this.

[0116] Figure 4 This diagram illustrates the steps of a cleaning method for cleaning bonding adhesive, as provided in an embodiment of this disclosure. (See reference...) Figure 4 The cleaning method includes the following steps: S101: The semiconductor structure is immersed in the first cleaning solution.

[0117] S102: The semiconductor structure after immersion is subjected to a first cleaning process using a second cleaning solution.

[0118] S103: The semiconductor structure after the first cleaning process is subjected to a second cleaning process using a third cleaning solution.

[0119] S104: The used third cleaning solution is filtered to obtain a recycled solution; the concentration of the recycled solution is greater than or equal to 90% of the concentration of the third cleaning solution, and the mass ratio of the bonding adhesive in the recycled solution is less than or equal to 3%.

[0120] S105: The first cleaning solution and / or the second cleaning solution are replenished with the recovered solution.

[0121] This embodiment of the invention accurately identifies the degree of contamination of waste liquid at different stages of the cleaning process, and specifically recycles the third cleaning liquid with a lower degree of contamination. The recycled liquid is then used in the immersion treatment and the first cleaning treatment, where the purity requirements of the cleaning liquid are not high, thereby realizing the recycling of the cleaning liquid, reducing the amount of cleaning liquid required in the semiconductor structure cleaning process, and thus reducing the manufacturing cost of the semiconductor structure.

[0122] In some embodiments, the cleaning method further includes: mixing the second cleaning liquid and the cleaning gas to obtain a two-fluid mixture; and performing a first cleaning treatment on the immersed semiconductor structure using the second cleaning liquid, including: performing a first cleaning treatment on the immersed semiconductor structure using the two-fluid mixture.

[0123] In this embodiment of the present disclosure, a two-fluid process is used to perform a first cleaning treatment on the semiconductor structure, which is beneficial to improving the cleaning effect of the semiconductor structure.

[0124] Here, the cleaning method embodiment has at least all the beneficial effects brought about by the technical solution of the above-described cleaning device embodiment. Details not mentioned in the cleaning method embodiment can be referred to the technical solution of the above-described cleaning device embodiment, and will not be repeated here.

[0125] This disclosure provides a cleaning apparatus and a cleaning method for cleaning bonding adhesives. The cleaning apparatus includes: a cleaning chamber for immersing a semiconductor structure in a first cleaning solution, performing a first cleaning treatment on the immersed semiconductor structure in a second cleaning solution, and performing a second cleaning treatment on the semiconductor structure after the first cleaning treatment in a third cleaning solution to remove bonding adhesive from the surface of the semiconductor structure; a recovery component for filtering the third cleaning solution discharged from the cleaning chamber to obtain a recovery solution; the concentration of the recovery solution is greater than or equal to 90% of the concentration of the third cleaning solution, and the mass proportion of bonding adhesive in the recovery solution is less than or equal to 3%; a first supply component connecting the recovery component and the cleaning chamber for supplying the recovery solution to the cleaning chamber to replenish the first cleaning solution and / or the second cleaning solution; the recovery component includes: a first liquid level monitoring component for detecting the liquid level height in the recovery component; wherein, when the liquid level height in the recovery component is greater than a first preset height, the recovery component supplies the recovery solution to the first supply component; the cleaning apparatus discharges the recovery solution in the recovery component at preset intervals; and / or, when the liquid level height in the recovery component is less than or equal to the first preset height, the cleaning apparatus discharges the recovery solution in the recovery component. This embodiment of the invention accurately identifies the contamination level of waste liquid at different stages of the cleaning process, and specifically recycles the third cleaning liquid with a lower contamination level. The recycled liquid is then used in the immersion treatment and the first cleaning treatment, where the purity requirements of the cleaning liquid are not high, thus achieving the recycling of the cleaning liquid and reducing the amount of cleaning liquid required in the semiconductor structure cleaning process, thereby reducing the manufacturing cost of the semiconductor structure. This embodiment of the invention also reduces the time spent transporting the semiconductor structure between different chambers by sequentially performing immersion treatment, the first cleaning treatment, and the second cleaning treatment in the same cleaning chamber, thereby shortening the process cycle for cleaning the bonding adhesive. Furthermore, this embodiment of the invention uses a first liquid level monitoring component to detect the liquid level height in the recycling component. When the liquid level height in the recycling component is greater than a first preset height, the recycling component uses… The device supplies recycled liquid to the first liquid supply component; when the liquid level in the recycling component is less than or equal to a first preset height, the recycling component stops supplying recycled liquid to the first liquid supply component, thereby avoiding the supply of recycled liquid with a high proportion of bonding adhesive at the bottom of the recycling component to the first liquid supply component, ensuring the cleaning effect of the semiconductor structure during immersion treatment and / or the first cleaning treatment; the embodiments of this disclosure also periodically discharge the recycled liquid in the recycling component; and / or, when the liquid level in the recycling component is less than or equal to the first preset height, the cleaning device is used to discharge the recycled liquid in the recycling component, which can discharge the recycled liquid containing a large amount of bonding adhesive accumulated at the bottom of the recycling component, reducing the accumulation of bonding adhesive at the bottom of the recycling component, and avoiding the replenishment of recycled liquid with a high proportion of bonding adhesive to the first cleaning liquid and / or the second cleaning liquid.

[0126] It should be understood that the phrase "an embodiment" or "one embodiment" throughout the specification means that a specific feature, structure, or characteristic related to the embodiment is included in at least one embodiment of this disclosure. Therefore, "in one embodiment" or "one embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this disclosure, the sequence numbers of the above-described processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this disclosure. The sequence numbers of the above-described embodiments are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0127] The above are merely preferred embodiments of this disclosure and do not limit the patent scope of this disclosure. Any equivalent structural transformations made using the contents of this specification and drawings under the inventive concept of this disclosure, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this disclosure.

Claims

1. A cleaning apparatus for cleaning bonding adhesive, characterized in that, include: The cleaning chamber is used to immerse the semiconductor structure in a first cleaning solution, to perform a first cleaning treatment on the immersed semiconductor structure in a second cleaning solution, and to perform a second cleaning treatment on the semiconductor structure after the first cleaning treatment in a third cleaning solution, so as to remove the bonding adhesive on the surface of the semiconductor structure. A recovery assembly is used to filter the third cleaning fluid discharged from the cleaning chamber to obtain a recovery liquid; The concentration of the recovered liquid is greater than or equal to 90% of the concentration of the third cleaning liquid; A first liquid supply assembly is connected to the recovery assembly and the cleaning chamber, and is used to deliver the recovered liquid to the cleaning chamber to replenish the first cleaning liquid and / or the second cleaning liquid; The recycling component includes: a first liquid level monitoring component for detecting the liquid level height within the recycling component; wherein, when the liquid level height within the recycling component is greater than a first preset height, the recycling component is used to transport the recycled liquid in the region within the recycling component that is higher than the first preset height to the first liquid supply component; the mass ratio of bonding adhesive in the recycled liquid in the region within the recycling component that is higher than the first preset height is less than a preset threshold. The cleaning device is used to discharge the recovered liquid from the recovery component at a preset cycle; and / or, When the liquid level in the recovery component is less than or equal to a first preset height, the cleaning device is used to discharge the recovered liquid in the recovery component.

2. The cleaning device according to claim 1, characterized in that, The first liquid supply assembly includes: A first pipeline connects the recovery assembly and the cleaning chamber, and is used to transport the recovered liquid to the cleaning chamber; A delivery pump is installed on the first pipeline and is used to regulate the pressure value in the first pipeline; wherein, when the recovery component delivers the recovered liquid to the cleaning chamber, the delivery pump is specifically used to control the pressure value in the first pipeline to be greater than or equal to a preset pressure.

3. The cleaning device according to claim 2, characterized in that, The first liquid supply assembly further includes: A pressure monitoring component is installed in the first pipeline to monitor the pressure value in the first pipeline and output a pressure signal corresponding to the pressure value. The delivery pump is specifically used to adjust the pressure value in the first pipeline according to the pressure signal.

4. The cleaning device according to claim 2, characterized in that, The first liquid supply assembly further includes: A first filter element installed in the first pipeline is used to filter the recovered liquid so that the mass ratio of the bonded adhesive in the recovered liquid is less than or equal to 1%.

5. The cleaning device according to claim 2, characterized in that, The first liquid supply assembly further includes: a first storage chamber disposed on the first pipeline on the side of the delivery pump away from the recovery assembly, for storing the first cleaning liquid and the second cleaning liquid; The second liquid level monitoring component is used to monitor the liquid level in the first storage chamber; wherein, when the liquid level in the first storage chamber is less than or equal to a second preset height, the recovery component is used to deliver the recovered liquid to the first liquid supply component.

6. The cleaning apparatus according to claim 1, characterized in that, Also includes: An air supply assembly, connected to the cleaning chamber, is used to deliver cleaning gas to the cleaning chamber; The cleaning chamber includes a mixing component for mixing the second cleaning liquid and the cleaning gas to obtain a two-fluid mixture; The cleaning chamber is used to perform the first cleaning process on the semiconductor structure after immersion using the two fluids.

7. The cleaning apparatus according to claim 6, characterized in that, The mixing component includes a two-fluid nozzle with a venturi structure and a pulse generator; the two-fluid nozzle is used to mix the second cleaning fluid and the cleaning gas. The pulse generator is connected to the inlet of the venturi structure and is used to apply pulse pressure to the interior of the venturi structure.

8. The cleaning apparatus according to claim 1, characterized in that, It also includes a high-frequency ultrasonic transducer, the distance between which is less than a preset distance from the semiconductor structure; the high-frequency ultrasonic transducer is used to convert electrical energy into high-frequency ultrasonic signals and send them to the surface of the semiconductor structure.

9. The cleaning device according to claim 1, characterized in that, Also includes: A microcapsule supply component, connected to the recycling component, is used to deliver microcapsules to the recycling component to obtain the recycled liquid containing the microcapsules; The cleaning chamber is used to immerse the semiconductor structure in a first cleaning solution including the microcapsules, and / or to perform the first cleaning treatment on the semiconductor structure after immersion in a second cleaning solution including the microcapsules. The microcapsules rupture during the immersion treatment and / or the first cleaning treatment, generating microjets on the surface of the semiconductor structure.

10. The cleaning apparatus according to claim 1, characterized in that, The recycling component includes: The second filtration component is used to filter the third cleaning fluid discharged from the cleaning chamber so that the mass ratio of the bonding adhesive in the recovered fluid is less than or equal to 3%. The second storage chamber is used to store the recovered liquid; the second filter element is disposed in the second storage chamber.

11. The cleaning apparatus according to claim 1, characterized in that, Also includes: The second liquid supply assembly is connected to the cleaning chamber and is used to deliver the third cleaning liquid to the cleaning chamber to replenish the third cleaning liquid. When the liquid level in the first liquid supply component is less than or equal to the third preset height, the second liquid supply component is also used to deliver the third cleaning fluid to the first liquid supply component to replenish the first cleaning fluid and / or the second cleaning fluid.

12. The cleaning apparatus according to claim 1, characterized in that, The cleaning chamber is also used to trim the bonding adhesive on the semiconductor structure before performing the first cleaning process on the semiconductor structure, so as to remove part of the bonding adhesive located at the edge of the semiconductor structure.

13. A cleaning method for cleaning bonding adhesive, characterized in that, include: The semiconductor structure was immersed in a first cleaning solution; The semiconductor structure after immersion is subjected to a first cleaning treatment using a second cleaning solution. The semiconductor structure after the first cleaning treatment is subjected to a second cleaning treatment using a third cleaning solution. The used third cleaning solution is filtered to obtain a recovered solution; the concentration of the recovered solution is greater than or equal to 90% of the concentration of the third cleaning solution. The portion of the recovered liquid that is more than a first preset height from the lowest position of the recovered liquid is used to replenish the first cleaning liquid and / or the second cleaning liquid; the mass ratio of the bonding adhesive in the portion of the recovered liquid that is more than a first preset height from the lowest position of the recovered liquid is less than a preset threshold.

14. The cleaning method according to claim 13, characterized in that, Also includes: The second cleaning fluid and cleaning gas are mixed to obtain a two-fluid mixture; The process of performing a first cleaning treatment on the immersed semiconductor structure using a second cleaning solution includes: performing a first cleaning treatment on the immersed semiconductor structure using the two fluids.

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