Method for producing a polycrystalline semiconductor material
By using filaments of different lengths in the vapor deposition reactor, the problem of uneven semiconductor rod growth caused by uneven distribution of reaction gas was solved, achieving more uniform deposition and lower risk of overturning, thus improving production efficiency and material quality.
CN122459239APending Publication Date: 2026-07-24WACKER CHEMIE AG
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WACKER CHEMIE AG
- Filing Date
- 2024-10-25
- Publication Date
- 2026-07-24
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Figure CN122459239A_ABST
Abstract
The subject of the invention is a method for producing a polycrystalline semiconductor material, comprising introducing a reaction gas containing hydrogen and at least one semiconductor component into a reaction chamber of a vapor deposition reactor, the reaction chamber being delimited by a reactor housing and a bottom plate, wherein the reaction gas is introduced through at least one nozzle located in the bottom plate, and wherein the reaction chamber contains at least two filament rods attached to the bottom plate, on which the semiconductor material is deposited, wherein the at least two filament rods differ in length.
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