Preparation method of high-uniformity infrared quartz glass

Abstract

The present application relates to the technical field of quartz glass preparation, and particularly relates to a preparation method of high-uniformity infrared quartz glass, which comprises the following steps: obtaining the weight of quartz glass deposited with initial parameters, and simultaneously determining the theoretical deposition amount to preliminarily determine the matching coefficient of silicon tetrachloride and oxygen; in response to the preliminary matching coefficient, and based on increasing the silicon tetrachloride supply amount, obtaining the deposition deficiency value to determine the control strategy of the silicon tetrachloride supply amount; obtaining the profile data of the quartz glass to determine the diameter deviation value, and then determining the matching coefficient of silicon tetrachloride and oxygen again; obtaining the surface topography image data of the quartz glass deposition layer with the current raw material supply parameters to determine the actual volume value, and then determining the subsequent feeding pressure. The present application can strictly control the extremely low hydroxyl content, and comprehensively determine and optimize the production quality and reaction system of the quartz glass from multiple dimensions, so as to improve the stability and yield of the high-uniformity infrared quartz glass preparation process.

Description

Technical Field

[0001] This invention relates to the field of quartz glass preparation technology, and in particular to a method for preparing highly uniform infrared quartz glass. Background Technology

[0002] One method for producing quartz glass ingots involves using an oxyhydrogen flame to provide a high-temperature environment, causing a chemical reaction in a gaseous precursor and depositing it to form a solid thin film. This process belongs to the branch of chemical vapor deposition (CVD). It utilizes the heat generated by the combustion of an oxyhydrogen flame to drive the reaction. In quartz glass preparation, high-purity silicon tetrachloride vapor is carried by oxygen into the oxyhydrogen flame, where it burns to generate water vapor, which then hydrolyzes with the silicon tetrachloride vapor. The resulting silica is deposited on the substrate to form high-purity quartz glass. After the deposition of the quartz glass ingot is complete, the deposition furnace is shut down and cooled to room temperature under certain conditions. However, this production method cannot effectively control the hydroxyl content, which is typically 1000 ppm. This results in strong absorption or even complete opacity at 1400 nm, 2200 nm, and especially 2730 nm, making it unsuitable for use in the infrared band. Furthermore, the radial hydroxyl distribution deviation leads to poor optical uniformity.

[0003] Chinese Patent Publication No. CN105502897A discloses a method for preparing ultrapure quartz glass. The method employs chemical vapor deposition (CVD) with an inductively coupled plasma flame as the heat source, a mixture of air and argon as the plasma ionization gas, a silicon-containing compound as the raw material, and a mixture of oxygen and helium as the carrier gas. The carrier gas carries the vaporized silicon-containing raw material through a feeder into a segmented, heat-insulated deposition furnace to react and generate silicon dioxide particles, which are deposited on a quartz glass substrate. As the deposition surface grows, the quartz glass substrate is lowered to maintain a constant deposition surface height, gradually forming a quartz glass block.

[0004] Therefore, the preparation method of the ultrapure quartz glass has the following problems: it is difficult to strictly control the extremely low hydroxyl content, and to comprehensively determine and optimize the production quality and reaction system of quartz glass from multiple dimensions, so as to improve the stability and yield of the preparation process of high uniformity infrared quartz glass. Summary of the Invention

[0005] Therefore, this invention provides a method for preparing highly uniform infrared quartz glass to overcome the difficulty in strictly controlling the extremely low hydroxyl content in the prior art, and to comprehensively determine and optimize the production quality and reaction system of quartz glass from multiple dimensions, thereby improving the stability and yield of the preparation process of highly uniform infrared quartz glass.

[0006] To achieve the above objectives, the present invention provides a method for preparing highly uniform infrared quartz glass, comprising: The weight of the quartz glass deposited with initial parameters is obtained to determine the actual deposition amount, and the deposition efficiency is judged by combining the theoretical deposition amount to preliminarily determine the ratio coefficient of silicon tetrachloride to oxygen. The control strategy for silicon tetrachloride supply is determined based on the initial adjustment of the ratio coefficient and the increase of silicon tetrachloride supply to obtain the deposition deficiency value. The profile data of the quartz glass was obtained to determine the diameter deviation value, and the deposition quality was judged to re-determine the ratio coefficient of silicon tetrachloride to oxygen. Obtain image data of the surface morphology of the quartz glass deposition layer based on the current raw material supply parameters to determine the actual volume value, judge the qualification of the volume growth rate, and determine the subsequent feeding pressure; The passability of the initial ratio of silicon tetrachloride to oxygen is determined based on the diameter deviation value and the actual volume value, so as to re-determine the initial ratio. The initial parameters include the initial proportioning coefficient and the initial feeding pressure, and the insufficient deposition value is determined based on the actual deposition amount and the preset deposition amount.

[0007] Furthermore, the process of determining the qualification of deposition efficiency based on the actual deposition volume includes, Compare the actual sediment volume with the preset sediment volume to determine the qualification of sedimentation efficiency; In response to the actual deposition amount being less than the preset deposition amount, and based on the fact that the actual deposition amount is less than the theoretical deposition amount, the silicon tetrachloride supply is increased according to the deposition deviation rate.

[0008] Furthermore, the process of determining the control strategy for silicon tetrachloride supply includes, By comparing the insufficient deposition value with the preset insufficient value, and in response to the insufficient deposition value being less than or equal to the preset insufficient value, the regulation strategy for silicon tetrachloride supply is determined to be a single adjustment.

[0009] Furthermore, the control strategy for the supply of silicon tetrachloride is determined to be multiple adjustments in response to the relationship between the insufficient deposition value and the preset insufficient value.

[0010] Furthermore, the process of determining the radial deposition quality qualification based on the diameter deviation value includes, By comparing the diameter deviation value with the preset deviation value, the quality of radial deposition is determined to be acceptable. In response to a diameter deviation value exceeding a preset deviation value, the oxygen supply is increased based on the diameter deviation rate, wherein the diameter deviation rate is determined based on the diameter deviation value and the preset deviation value.

[0011] Furthermore, in response to the diameter deviation value being greater than a preset deviation value, and based on the diameter deviation value being greater than a failure deviation value, the deposition furnace is shut down to terminate the oxidation reaction.

[0012] Furthermore, the process of determining the compliance of volume growth rate based on actual volume values ​​includes, Compare the actual volume value with the preset volume value to determine the compliance of the volume growth rate; In response to the actual volume value being greater than the preset volume value, the feeding pressure is increased according to the volume deviation rate, wherein the volume deviation rate is determined based on the actual volume value and the preset volume value.

[0013] Furthermore, in response to the actual volume value being greater than the preset volume value, and based on the actual volume value being greater than the failure volume value, the deposition furnace is shut down to terminate the oxidation reaction.

[0014] Furthermore, the process of determining the suitability of the preliminary ratio of silicon tetrachloride to oxygen includes, By comparing the diameter deviation value with the intermediate deviation value, and by comparing the actual volume value with the intermediate volume value, the passability of the ratio coefficient of silicon tetrachloride and oxygen is preliminarily determined. In response to the diameter deviation value being greater than the intermediate deviation value, and based on the actual volume value being greater than the intermediate volume value, the initial proportioning coefficient is determined to be reduced according to the diameter deviation rate. The intermediate deviation value is determined based on the preset deviation value and the failure deviation value, and the intermediate volume value is determined based on the preset volume value and the failure volume value.

[0015] Furthermore, in response to the diameter deviation value being less than or equal to the preset deviation value, and based on the actual volume value being less than or equal to the preset volume value, the initial silicon tetrachloride supply is increased according to the preset raw material addition amount combined with the current initial ratio coefficient.

[0016] Compared with the prior art, the beneficial effects of the preparation method of high uniformity infrared quartz glass of the present invention are that it can strictly control the extremely low hydroxyl content, and comprehensively determine and optimize the production quality and reaction system of quartz glass from multiple dimensions, thereby improving the stability and yield of the preparation process of high uniformity infrared quartz glass.

[0017] Furthermore, when the current weight of deposited quartz glass does not meet the expected requirements, this invention determines the cause of the deposition anomaly, classifying it as either due to insufficient raw materials or an abnormal oxidation reaction. If the anomaly is determined to be due to insufficient raw materials, the intelligent system increases the supply of silicon tetrachloride and oxygen according to the current ratio coefficient based on the severity of the anomaly, ensuring stable oxidation reaction while improving quartz glass deposition efficiency. When both abnormal oxidation reaction and insufficient raw materials exist, the intelligent system prioritizes increasing the supply of silicon tetrachloride based on the severity of the deposition anomaly, prioritizing improved quartz glass deposition efficiency. Subsequent control strategies are then implemented based on the quartz glass deposition after increasing the silicon tetrachloride supply, effectively suppressing situations where current quartz glass production exceeds expectations, ensuring quartz glass preparation efficiency, and finally, adjusting the subsequent quartz glass deposition quality based on the preparation efficiency.

[0018] Furthermore, in cases where an abnormal oxidation reaction is detected, the present invention intelligently increases the supply of silicon tetrachloride based on the abnormal deposition efficiency. The adjustment range of the silicon tetrachloride supply, combined with the allowable fluctuation range of the deposition furnace, determines the control strategy for the silicon tetrachloride supply. This avoids a single increase in the silicon tetrachloride supply exceeding the allowable fluctuation range of the deposition furnace, which could lead to furnace malfunction. Through this intelligent control strategy, the quality stability of the deposited quartz glass is ensured, and over-controlling the process can disrupt the equilibrium between silicon tetrachloride and oxygen, thereby improving the stability of the preparation of highly uniform infrared quartz glass.

[0019] Furthermore, in the process of depositing quartz glass, this invention monitors the diameter deviation of the deposited quartz glass to reflect the radial deposition quality. If the radial deposition quality of the quartz glass does not meet expectations, the cause is determined to be insufficient oxygen supply or insufficient temperature, resulting in quartz glass with a lower density and loose texture than expected. The invention intelligently increases the oxygen supply and raises the oxidation reaction temperature according to the degree of abnormality of the diameter deviation value, ensuring that silicon tetrachloride fully completes the oxidation reaction, reducing the deterioration of quartz glass quality due to insufficient oxygen, thereby improving the quality of deposited quartz glass under abnormal conditions and increasing the yield of deposited quartz glass.

[0020] Furthermore, this invention uses the failure deviation value as the depth threshold for judging the deposition quality. When the diameter deviation value exceeds the failure deviation value, it can accurately identify the critical state where the deposition process is completely out of control and the product has been severely degraded, and immediately shut down the deposition furnace and terminate the oxidation reaction. This avoids continuing to invest raw materials, energy and time when the optical uniformity of the quartz glass is severely damaged, effectively preventing resource waste and excessive equipment wear caused by ineffective production. When the diameter deviation value exceeds the preset deviation value but has not yet reached the failure deviation value, it is determined to be an occasional or recoverable deviation. The oxygen supply is then regulated to restore the oxidation reaction between silicon tetrachloride and oxygen, ensuring that the oxidation reaction proceeds fully and maintaining the stable deposition of the glassy layer.

[0021] Furthermore, when the axial growth rate of the deposited quartz glass exceeds the expected rate, this invention determines that the abnormal deposition rate is due to insufficient oxidation of silicon tetrachloride, resulting in a loose structure with a lower density than expected, leading to abnormal axial deposition volume. By increasing the oxygen feed pressure and simultaneously increasing the electrical power to raise the reaction temperature, the silicon tetrachloride and oxygen are more evenly dispersed, ensuring sufficient oxidation of the reacting silicon tetrachloride. This guarantees the axial deposition quality of the quartz glass and prevents the quality of the deposited quartz glass from failing to meet the expected performance requirements of high-uniformity infrared quartz glass. Intelligently, based on the degree of abnormality in the current axial deposition rate of the quartz glass, the invention determines the adjustment range of the feed pressure and temperature. Increasing the feed pressure enhances the mixing effect of silicon tetrachloride and oxygen, and raising the temperature enhances the oxidation reaction. Even when the deposition rate remains abnormal, by continuously adjusting the feed pressure and raising the oxidation reaction temperature, the invention reduces the situation where the mixing effect of silicon tetrachloride and oxygen is not up to expectations, ensuring that the mixing effect of silicon tetrachloride and oxygen reaches the expected state and meets the performance requirements of the deposited quartz glass.

[0022] Furthermore, this invention introduces a failure volume value as a deep-level judgment threshold for uncontrolled volume growth. When the actual volume value exceeds the failure volume value, it can accurately identify that the quartz glass is in an irreversible deterioration state with severe bubble aggregation, structural rupture risk, and severely damaged optical uniformity. It immediately cuts off the oxygen supply and silicon tetrachloride supply, terminates the oxidation reaction and plasma flame, thereby avoiding the continued input of raw materials and energy when the product is completely ineffective, effectively preventing resource waste and excessive equipment wear.

[0023] Furthermore, when the currently deposited quartz glass does not meet the expected requirements, this invention increases the silicon tetrachloride supply to increase the proportioning coefficient based on the deposition deviation rate. However, if the silicon tetrachloride supply is increased without increasing the oxygen supply, the silicon tetrachloride cannot be fully oxidized, leading to quality degradation while increasing the amount of deposited quartz glass. In this case, the invention intelligently reduces the initial proportioning coefficient based on the diameter deviation rate. While increasing the silicon tetrachloride supply, it also reduces the abnormal amplitude of the oxygen supply, thereby increasing the oxidation effect of silicon tetrachloride. While rapidly increasing the deposited quartz glass to meet production needs, the subsequent rapid increase in oxygen ensures sufficient oxidation of silicon tetrachloride, producing quartz glass with the target density. This avoids the situation where, even after the oxygen supply has been increased, a significant increase in oxygen supply is still made, causing excessive oxygen supply, diluting the plasma flame, lowering the reaction temperature, and resulting in incomplete oxidation of silicon tetrachloride, thus reducing the quality of the deposited quartz glass. By controlling the initial proportioning coefficient to provide a basis for subsequent quartz deposition, while reducing the current initial proportioning coefficient to increase the oxygen supply, the deviation amplitude of oxygen supply when controlling the silicon tetrachloride supply is reduced, thereby improving the stability of the quartz glass deposition process.

[0024] Furthermore, this invention utilizes positive excitation adjustment under dual conditions of diameter deviation and actual volume to accelerate the preparation speed when both radial deposition quality and volume growth rate are better than expected. When the diameter deviation is less than or equal to a preset deviation and the actual volume is less than or equal to a preset volume, the oxidation process is considered successful and the product quality exceeds expectations. At this point, the raw material supply is actively increased by a fixed percentage of the current initial silicon tetrachloride supply, effectively improving production efficiency and output while ensuring high uniformity of quartz glass. The maximum value of the initial raw material supply is set according to the reaction limit of the deposition furnace to avoid overloading the reaction system or deteriorating product quality due to excessive acceleration, achieving a dynamic balance between quality assurance and capacity optimization. Intelligent positive control enables the raw material supply under high-quality production conditions to automatically match the actual carrying capacity of the deposition furnace, achieving efficient, stable, and batch preparation of highly uniform infrared quartz glass while maintaining high quality with radial uniformity and controllable volume. Attached Figure Description

[0025] Figure 1 This is a flowchart illustrating the preparation method of highly uniform infrared quartz glass according to an embodiment of the present invention. Figure 2 This is a flowchart illustrating the process of determining the pass / failability of quartz glass deposition efficiency in an embodiment of the present invention. Figure 3 This is a flowchart illustrating the process of determining the quality of radial deposition of quartz glass according to an embodiment of the present invention. Figure 4 This is a flowchart for determining the pass rate of quartz glass volume growth in an embodiment of the present invention. Detailed Implementation

[0026] To make the objectives and advantages of the present invention clearer, the present invention will be further described below with reference to embodiments; it should be understood that the specific embodiments described herein are merely for explaining the present invention and are not intended to limit the present invention.

[0027] Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0028] Please see Figure 1 As shown, it is a flowchart of the preparation method of high uniformity infrared quartz glass according to an embodiment of the present invention; The method for preparing highly uniform infrared quartz glass according to embodiments of the present invention includes, Step S1: Based on the set initial parameters, deposit quartz glass and detect the deposited weight of the quartz glass in real time to determine the actual deposition amount.

[0029] In this embodiment, the initial parameters include the initial proportioning coefficient and the initial feeding pressure.

[0030] The initial ratio coefficient is the set ratio of silicon tetrachloride supply to oxygen supply per unit time.

[0031] The initial feed pressure is the set pressure at which oxygen carries silicon tetrachloride into the plasma flame for reaction.

[0032] The actual deposition amount is determined by subtracting the base weight from the actual weight measured in real time by a load-bearing sensor mounted on a fixed assembly supporting the target rod. This is used to characterize whether the actual weight of the deposited high-uniformity infrared quartz glass meets expectations.

[0033] The actual weight is determined based on the weight of the target rod, the fixing components, and the deposited quartz glass.

[0034] The base weight is determined based on the weight of the target rod and the fixing components.

[0035] The fixing component is a chuck or clamp that mounts the target rod. It can stably hold the target rod and drive it to rotate and move in the deposition direction under external force, ensuring the uniformity of quartz glass deposition on the target rod surface. This prevents uneven accumulation of deposited quartz glass on the target rod surface due to gravity, which could lead to thickness deviations exceeding the allowable range of the process.

[0036] In the standard process, silicon tetrachloride reacts with oxygen in a plasma flame to produce silicon dioxide and chlorine. The silicon dioxide enters the cooling zone and quickly solidifies into a smoke-like substance, which is then deposited on the target rod. The chlorine is cooled by a spray scrubbing tower, which removes silicon dioxide dust and hydrolyzed silicon tetrachloride residue before being discharged. During the chlorine discharge process, the temperature of the plasma flame area is carried away, causing fluctuations in the reaction between silicon tetrachloride and oxygen in the plasma flame area. The stronger the reaction fluctuation, the more the actual amount of silicon dioxide deposited deviates from the expected stable state. At the same time, it will cause fluctuations in the quality of silicon dioxide, affecting the performance of high-uniformity infrared quartz glass.

[0037] Specifically, the weight of the quartz glass deposited with initial parameters is obtained to determine the actual deposition amount, and the deposition efficiency is judged by combining the theoretical deposition amount, so as to preliminarily determine the ratio coefficient of silicon tetrachloride to oxygen. The preset deposition amount is determined based on the current production efficiency of the deposition furnace and the target deposition amount of infrared quartz glass.

[0038] Theoretical deposition amount is the theoretical deposition amount of infrared quartz glass determined based on the current silicon tetrachloride supply and the conversion efficiency allowed by the process.

[0039] Please see Figure 2As shown, it is a flowchart for determining the qualification of quartz glass deposition efficiency in an embodiment of the present invention; Specifically, the process of determining the qualification of deposition efficiency based on the actual deposition volume includes: Compare the actual sediment volume with the preset sediment volume to determine the qualification of sedimentation efficiency; In response to the actual deposition amount being less than the preset deposition amount, and based on the fact that the actual deposition amount is less than the theoretical deposition amount, the silicon tetrachloride supply is increased according to the preset adjustment amount.

[0040] When the actual deposition amount is greater than or equal to the preset deposition amount, it indicates that the silicon tetrachloride added at present can meet the current production needs of the deposited quartz glass after oxidation reaction. Subsequent supply will continue according to the current silicon tetrachloride supply amount, and the deposition efficiency is judged to be qualified.

[0041] When the actual deposition amount is less than the preset deposition amount, it indicates that the deposition rate of silicon dioxide cannot meet the current production requirements. The preparation process of high uniformity infrared quartz glass is abnormal and deviates from the expected state. This may be due to insufficient silicon tetrachloride supply or abnormal oxidation reaction. The current determination is that the deposition efficiency is unqualified.

[0042] When insufficient silicon tetrachloride supply leads to unqualified deposition efficiency, it may be because the overall supply of silicon tetrachloride and oxygen under the current ratio does not meet the production rate requirements of quartz glass, resulting in the actual production speed of quartz glass failing to reach the expected speed.

[0043] An abnormal oxidation reaction process leading to a failure to meet the deposition efficiency criteria may be due to insufficient plasma flame temperature or uneven gas distribution causing a decrease in deposition efficiency. Further analysis of the conversion of silicon tetrachloride was conducted to determine the reasons for the unsatisfactory deposition efficiency. When the actual deposition amount is greater than or equal to the theoretical deposition amount, it indicates that the current process of silicon tetrachloride being deposited to form quartz glass is in an acceptable state. The reason for the unqualified deposition efficiency is that the raw material supply is insufficient to meet the expected requirements. The raw material supply should be increased to compensate for the insufficient silicon tetrachloride supply, which leads to the quartz glass deposition rate not meeting the current production needs.

[0044] Based on the current ratio coefficient, increase the supply of silicon tetrachloride and oxygen according to the deposition deviation rate; The deposition deviation rate is determined by dividing the difference between the preset deposition amount and the actual deposition amount by the preset deposition amount. It is used to characterize the degree of deviation between the current actual deposition amount of the quartz glass and the preset deposition amount required by the target. When the oxidation reaction of silicon tetrachloride is as expected, the supply of silicon tetrachloride and oxygen is increased according to the degree of deviation of the current deposition efficiency of the quartz glass to ensure that the added silicon tetrachloride and oxygen can meet the production needs of quartz glass under the expected reaction conditions.

[0045] When the actual deposition amount is less than the theoretical deposition amount, it indicates that the silicon tetrachloride oxidation process is abnormal, and there is also the possibility of insufficient raw material supply. At this time, the silicon tetrachloride supply is increased according to the deposition deviation rate to ensure a stable increase in the deposition rate and to ensure an increase in the weight of the deposited silicon dioxide. Under the abnormal state of the oxidation reaction, the silicon tetrachloride supply is first adjusted to facilitate the subsequent adjustment of the oxygen supply and ensure that the abnormal oxidation reaction is quickly adjusted to the expected state.

[0046] This invention addresses the issue of quartz glass deposition weight falling short of expectations by determining the cause of the deposition anomaly. The anomaly is identified as either due to insufficient raw materials or an abnormal oxidation reaction. If the anomaly is determined to be due to insufficient raw materials, the intelligent system increases the supply of silicon tetrachloride and oxygen according to the current ratio based on the severity of the anomaly. This ensures stable oxidation reaction while improving quartz glass deposition efficiency. When both abnormal oxidation reaction and insufficient raw materials are present, the intelligent system prioritizes increasing the supply of silicon tetrachloride to further enhance quartz glass deposition efficiency. Subsequent control strategies are then implemented based on the quartz glass deposition after increasing the silicon tetrachloride supply. This effectively suppresses situations where current quartz glass production exceeds expectations, ensuring efficient quartz glass production. Finally, the deposition quality of subsequent quartz glass is adjusted based on the production efficiency.

[0047] Step S2, in response to the initial adjustment of the proportioning coefficient, and based on increasing the supply of silicon tetrachloride, to obtain the deposition deficiency value, determine the adjustment strategy of silicon tetrachloride supply.

[0048] The insufficient deposition value is determined by the difference between the preset deposition amount and the actual deposition amount, and is used to characterize the degree to which the current deposition efficiency of the quartz glass does not meet the expected efficiency.

[0049] If the actual deposition amount is less than the preset deposition amount and the actual deposition amount is less than the theoretical deposition amount, it indicates that the current oxidation reaction is abnormal. When determining to increase the silicon tetrachloride supply, it is necessary to determine the adjustment strategy based on the adjustment range of the silicon tetrachloride supply. If the adjustment range is too large in a single instance, it will exceed the reaction limit of the deposition furnace, leading to uncontrolled reaction or the generation of too many by-products, resulting in the deterioration of the quality of the deposited quartz glass.

[0050] Specifically, the process of determining the regulation strategy for silicon tetrachloride supply includes, By comparing the insufficient deposition value with the preset insufficient value, and in response to the insufficient deposition value being less than or equal to the preset insufficient value, the regulation strategy for silicon tetrachloride supply is determined to be a single adjustment.

[0051] The preset insufficient value is determined based on the fluctuation value of silicon tetrachloride that the deposition furnace can withstand per unit time, and the corresponding amount of quartz glass deposition.

[0052] When the insufficient deposition value is less than or equal to the preset insufficient value, it indicates that the increase in the silicon tetrachloride supply based on the deposition deviation rate is within the range of single adjustment that the deposition furnace can withstand. The silicon tetrachloride supply can be adjusted to the redefined supply amount in one go, rapidly increasing the reactants in the quartz glass to increase the weight of the quartz glass deposition.

[0053] Specifically, the strategy for regulating the supply of silicon tetrachloride in response to the relationship between the insufficient deposition value and the preset insufficient value is to adjust it multiple times.

[0054] When the deposition deficiency value is greater than the preset deficiency value, it indicates that the current increase in the silicon tetrachloride supply based on the deposition deviation rate exceeds the range of single adjustment that the deposition furnace can withstand. Therefore, the adjustment range of the silicon tetrachloride supply is divided into multiple adjustments. The deposition fluctuation of the quartz glass corresponding to the single adjustment of the silicon tetrachloride supply does not exceed the preset deficiency value, so as to ensure that the reaction in the deposition furnace is stable when the silicon tetrachloride supply is increased.

[0055] In cases where an abnormal oxidation reaction is detected, this invention intelligently increases the supply of silicon tetrachloride based on the abnormal deposition efficiency. Furthermore, by adjusting the silicon tetrachloride supply range and considering the allowable fluctuations of the deposition furnace, a control strategy for the silicon tetrachloride supply is determined. This avoids a single increase in the silicon tetrachloride supply exceeding the allowable fluctuation range of the deposition furnace, which could lead to furnace malfunction. Through this intelligent control strategy, the quality stability of the deposited quartz glass is ensured, preventing over-control from disrupting the equilibrium between silicon tetrachloride and oxygen, and improving the stability of preparing highly uniform infrared quartz glass.

[0056] Step S3: Obtain the profile data of the quartz glass to determine the diameter deviation value, judge the radial deposition quality, and re-determine the ratio coefficient of silicon tetrachloride to oxygen.

[0057] The diameter deviation value, determined based on the maximum and minimum outer diameters of the deposited quartz glass, is used to characterize the radial deposition quality of the deposited quartz glass.

[0058] The maximum and minimum outer diameters of the quartz glass were determined in real time by monitoring the profile data of the quartz glass deposited in the deposition furnace using an optical coherence tomography (OCT) monitoring system. The maximum outer diameter is the diameter of the circle containing the point farthest from the axis on the same plane; the minimum outer diameter is the diameter of the circle containing the point closest to the axis on the same plane.

[0059] Please see Figure 3 As shown, it is a flowchart for determining the quality of radial deposition of quartz glass according to an embodiment of the present invention; Specifically, the process of determining the quality of radial deposition based on diameter deviation values ​​includes: By comparing the diameter deviation value with the preset deviation value, the quality of radial deposition is determined to be acceptable. In response to a diameter deviation value exceeding a preset deviation value, the oxygen supply is increased based on the diameter deviation rate, wherein the diameter deviation rate is determined based on the diameter deviation value and the preset deviation value.

[0060] Simultaneously, the electrical power is increased according to the diameter deviation rate. The electrical power is positively correlated with the diameter deviation rate.

[0061] The preset deviation value is determined based on the diameter deviation of the quartz glass prepared under the expected conditions.

[0062] The diameter deviation rate, determined by dividing the difference between the diameter deviation value and a preset deviation value by the preset deviation value, characterizes the degree to which the radial deviation of the deposited quartz glass exceeds expectations.

[0063] Under standard processes, when the oxygen supply is relatively insufficient during the oxidation reaction, silicon tetrachloride cannot be completely oxidized. The reaction tends to generate non-stoichiometric SiOx, where x is less than 2, or intermediate products containing unbroken Si-Cl bonds. The structure of these intermediate products is looser than that of silicon dioxide, with a lower molecular packing density. This results in a large number of bubbles and pores in the prepared quartz glass, reducing its density and light transmittance, and increasing optical inhomogeneity.

[0064] The oxygen supply is positively correlated with the diameter deviation rate. The larger the diameter deviation rate, the looser the currently deposited quartz glass, the lower the molecular packing density, the less sufficient the oxidation of silicon tetrachloride, and the greater the increase in oxygen supply.

[0065] When the diameter deviation is less than or equal to the preset deviation, it indicates that the radial quality of the deposited quartz glass is qualified and the surface diameter deviation does not exceed the expectations. The oxygen supply can be maintained at this time. When adjusting the raw material supply, the ratio of silicon tetrachloride to oxygen should be adjusted to ensure the balance and stability of the reaction system, and the deposition quality is judged to be qualified.

[0066] When the diameter deviation value is greater than the preset deviation value, it indicates that the current reaction process has an insufficient oxygen concentration or temperature, resulting in incomplete oxidation. The radial deposition quality of the quartz glass is unqualified. Based on the diameter deviation rate, the oxygen supply is increased and the electric power is increased to raise the plasma flame temperature, ensuring that silicon tetrachloride can be completely oxidized in the plasma flame region to generate silicon dioxide with the expected structure, thus guaranteeing the radial deposition quality of the quartz glass.

[0067] This invention monitors the diameter deviation of the deposited quartz glass during the deposition process to reflect the radial deposition quality. If the radial deposition quality fails to meet expectations, the cause is determined to be insufficient oxygen supply or insufficient temperature, resulting in quartz glass with a lower-than-expected density and loose texture. The invention intelligently increases the oxygen supply and raises the oxidation reaction temperature based on the degree of diameter deviation anomaly, ensuring that silicon tetrachloride fully completes the oxidation reaction. This reduces the degradation of quartz glass quality due to insufficient oxygen, thereby improving the quality of deposited quartz glass under abnormal conditions and increasing the yield rate.

[0068] Specifically, in response to a diameter deviation value exceeding a preset deviation value, and based on the diameter deviation value exceeding a failure deviation value, the deposition furnace is shut down to terminate the oxidation reaction.

[0069] The failure deviation value is determined based on the maximum and minimum outer diameters of the quartz glass corresponding to the case where the radial quality of the deposited quartz glass is completely unqualified, in order to characterize whether the reaction between silicon tetrachloride and oxygen is out of control.

[0070] When the diameter deviation is less than or equal to the failure deviation, it may be due to a detection deviation in the optical coherence tomography monitoring system when detecting the contour data of the quartz glass deposited in the deposition furnace, resulting in unqualified radial deposition quality. In this case, the radial deposition quality may be an occasional failure, but there is a risk of long-term failure. It is not necessary to stop the reaction process in the deposition furnace immediately. Instead, the raw material supply should be checked to determine whether the oxygen concentration matches the silicon tetrachloride supply. Fine adjustments should be made to address the imbalance in the ratio, increasing the oxygen supply to restore the reaction balance and ensure that the oxidation reaction proceeds fully. At the same time, the reaction temperature should be monitored to ensure that the silicon tetrachloride is fully oxidized and the glassy layer is deposited stably, avoiding the recurrence of pores or unqualified product accumulation.

[0071] When the diameter deviation exceeds the failure deviation, it indicates that the current quartz glass preparation process is completely out of control. The reaction process abruptly changed during the previous detection, and the product deteriorates rapidly. The raw material supply should be stopped immediately, and the supply of silicon tetrachloride and oxygen should be cut off to prevent further deterioration of the deposited layer quality. At this point, the deposition process has seriously deviated from the standard process, and the deposited quartz glass is severely degraded, with seriously impaired optical uniformity. The quartz glass preparation process is now completely ineffective; continuing it will only waste resources and damage equipment. The reaction must be terminated, and the root cause of the system failure must be investigated.

[0072] This invention uses the failure deviation value as the depth threshold for judging the deposition quality. When the diameter deviation value exceeds the failure deviation value, it can accurately identify the critical state where the deposition process is completely out of control and the product has been severely degraded, and immediately shut down the deposition furnace and terminate the oxidation reaction. This avoids the continued input of raw materials, energy and time when the optical uniformity of the quartz glass is severely damaged, and effectively prevents the waste of resources and excessive wear and tear on equipment caused by ineffective production. When the diameter deviation value exceeds the preset deviation value but has not yet reached the failure deviation value, it is judged as an occasional or recoverable deviation. The oxygen supply is adjusted to restore the oxidation reaction between silicon tetrachloride and oxygen, ensuring that the oxidation reaction proceeds fully and maintaining the stable deposition of the glassy layer.

[0073] Step S4: Obtain image data of the surface morphology of the quartz glass deposition layer based on the current raw material supply parameters to determine the actual volume value, judge the qualification of the volume growth rate, and determine the subsequent feeding pressure.

[0074] The actual volume value is determined based on the profile data of the deposited quartz glass and is used to characterize the axial deposition quality of the deposited quartz glass and whether the volume growth rate is acceptable.

[0075] The visual inspection system acquires images of the surface morphology of the quartz glass deposition layer, extracts edge contour features through image processing algorithms, determines the volume of the currently deposited quartz glass, and determines the actual volume value by combining the volume of the target rod.

[0076] In this embodiment, during the standard deposition process, if the current silicon tetrachloride and oxygen ratio is qualified, and the current feeding pressure is qualified, the silicon tetrachloride and oxygen are mixed evenly and reach the expected state, the axial quality of the deposited quartz glass is qualified, and the axial growth rate of the deposited quartz glass is in the expected state. If the axial growth rate of the deposited quartz glass exceeds the expected value, the axial deposition quality of the quartz glass deteriorates, the deposited structure is loose and the density is low, and the volume increases under the same amount of silicon tetrachloride raw material, which is manifested as an accelerated deposition rate of quartz glass.

[0077] Please see Figure 4 As shown, it is a flowchart for determining the pass rate of volume growth in an embodiment of the present invention; Specifically, the process of determining the compliance of volume growth rate based on actual volume values ​​includes: Compare the actual volume value with the preset volume value to determine the compliance of the volume growth rate; In response to the actual volume value being greater than the preset volume value, the feeding pressure is increased according to the volume deviation rate.

[0078] At the same time, the electrical power is increased again based on the volume deviation rate. The electrical power is positively correlated with the volume deviation rate.

[0079] The preset volume value is determined based on the volume corresponding to the standard density of the deposited glass, and is used to determine whether the volume growth rate of the deposited quartz glass is qualified.

[0080] Volume deviation rate, determined by dividing the difference between the actual volume value and the preset volume value by the preset volume value, characterizes the degree to which the axial deposition rate of the deposited quartz glass deviates from the normal state. It also characterizes the axial deposition quality of the deposited quartz glass.

[0081] Feeding pressure is positively correlated with volume deviation rate. The greater the volume deviation rate, the larger the volume of quartz glass deposited by the same amount of silicon tetrachloride per unit time, the lower the density, the more serious the loose state exceeds the expected state, and the worse the mixing uniformity of silicon tetrachloride and oxygen. The strategy of increasing the feeding pressure to improve the mixing uniformity of silicon tetrachloride and oxygen corresponds to a larger adjustment range of the feeding pressure. The larger the adjustment range of the feeding pressure, the more obvious the reduction of poor mixing uniformity of silicon tetrachloride and oxygen.

[0082] When the actual volume value is less than or equal to the preset volume value, it indicates that the volume growth of the deposited quartz glass is within a controllable range, the deposited quartz glass has fewer bubbles, and the density and loose state of the quartz glass are within a controllable range, meeting the performance requirements of the target quartz glass. The current material feeding pressure can be maintained to continue the reaction of the raw materials, thus producing qualified quartz glass. The volume growth rate is deemed acceptable.

[0083] When the actual volume value is greater than the preset volume value, it indicates that the volume of the deposited quartz glass is growing too fast, the axial deposition quality of the deposited quartz glass does not meet expectations, the quartz glass is in a loose state during deposition, the current density of the quartz glass is less than the density under the expected state, there is a risk of too many bubbles and stress concentration. It is determined to increase the feed pressure to make silicon tetrachloride and oxygen mix fully and react fully in the plasma flame region to generate fully oxidized silicon dioxide, thereby ensuring the axial deposition quality of the deposited quartz glass.

[0084] This invention, when detecting an axial growth rate of deposited quartz glass exceeding the expected rate, determines that the abnormal deposition rate is due to insufficient oxidation of silicon tetrachloride, resulting in a loose structure with a lower-than-expected density, leading to abnormal axial deposition volume. By increasing the oxygen feed pressure and simultaneously increasing the electrical power to raise the reaction temperature, the silicon tetrachloride and oxygen are more evenly dispersed, ensuring sufficient oxidation of the reacting silicon tetrachloride. This guarantees the axial deposition quality of the quartz glass and prevents the deposited quartz glass from failing to meet the expected quality and performance requirements of high-uniformity infrared quartz glass. The invention intelligently determines the adjustment range of the feed pressure and temperature based on the degree of abnormality in the current axial deposition rate of the quartz glass. Increasing the feed pressure enhances the mixing effect of silicon tetrachloride and oxygen, and raising the temperature enhances the oxidation reaction. Even when the deposition rate remains abnormal, by continuously adjusting the feed pressure and raising the oxidation reaction temperature, the inadequate mixing effect of silicon tetrachloride and oxygen is reduced, ensuring that the mixing effect of silicon tetrachloride and oxygen reaches the expected level and meets the performance requirements of the deposited quartz glass.

[0085] Specifically, in response to the actual volume value being greater than the preset volume value, and based on the actual volume value being greater than the failure volume value, the deposition furnace is shut down to terminate the oxidation reaction.

[0086] The failure volume value is determined based on the volume corresponding to the minimum allowable density of the deposited quartz glass, indicating that the current quality of the quartz glass is far from expected and is in a severely deteriorated state. It is impossible to bring the quality of the deposited quartz glass up to expectations in the short term by controlling the deposition process.

[0087] When the actual volume value is less than or equal to the failure volume value, it indicates that the volume growth of the deposited quartz glass has not yet run out of control and is in a recoverable state. The reason for the unqualified volume growth rate may be due to insufficient oxygen concentration during the reaction process or uneven mixing of silicon tetrachloride and oxygen. However, it is still possible to promote the uniformity of mixing of silicon tetrachloride and oxygen by increasing the feeding pressure, thereby increasing the oxidation effect of silicon tetrachloride, reducing the growth rate of the deposited quartz glass, and restoring the performance of the quartz glass.

[0088] When the actual volume value exceeds the failure volume value, indicating that the growth rate control is unqualified, it means that the volume of the deposited quartz glass is seriously out of control, with a serious risk of bubble aggregation and structural rupture, resulting in an excessively large volume of quartz glass. At this point, the supply of reaction gas must be stopped immediately, and the supply of silicon tetrachloride must be cut off. The quartz glass produced at this time has been severely degraded, and its optical uniformity has been severely damaged. The quartz glass preparation process at this point is completely ineffective, and continuing will only lead to waste of resources and equipment damage. The reaction must be terminated and the root cause of the system failure must be investigated.

[0089] This invention introduces a failure volume value as a deep-level judgment threshold for uncontrolled volume growth. When the actual volume value exceeds the failure volume value, it can accurately identify that the quartz glass is in an irreversible deterioration state with severe bubble accumulation, structural rupture risk, and severely damaged optical uniformity. It immediately cuts off the oxygen supply and silicon tetrachloride supply, terminates the oxidation reaction and plasma flame, thereby avoiding the continued input of raw materials and energy when the product is completely ineffective, effectively preventing resource waste and excessive equipment wear.

[0090] Step S5: Based on the diameter deviation value and the actual volume value, determine the qualification of the preliminary ratio coefficient of silicon tetrachloride and oxygen, so as to re-determine the initial ratio coefficient.

[0091] Specifically, the process of determining the suitability of the preliminary ratio of silicon tetrachloride to oxygen includes: By comparing the diameter deviation value with the intermediate deviation value, and by comparing the actual volume value with the intermediate volume value, the passability of the ratio coefficient of silicon tetrachloride and oxygen is preliminarily determined. In response to a diameter deviation value greater than an intermediate deviation value, and based on the actual volume value being greater than an intermediate volume value, the initial proportioning coefficient is determined to be reduced according to the diameter deviation rate.

[0092] The intermediate deviation value, which is determined based on the median of the preset deviation value and the failure deviation value, is used to determine the tendency of radial deposition quality.

[0093] The intermediate volume value, which is determined based on the median of the preset volume value and the failure volume value, is used to determine the tendency of axial deposition quality.

[0094] The diameter deviation rate is more effective in reflecting the quality of quartz glass deposition at a given time. During the uniform deposition of quartz glass, a larger diameter deviation rate indicates a more severe deficiency in silicon tetrachloride oxidation. When the initial ratio coefficient is reduced, the initial ratio coefficient is inversely proportional to the diameter deviation rate. Therefore, in the case of insufficient oxidation, reducing the initial ratio coefficient increases the relative supply of oxygen, thereby enhancing the oxidation effect of silicon tetrachloride.

[0095] When the diameter deviation is greater than the intermediate deviation and the actual volume is greater than the intermediate volume, it indicates that the currently deposited quartz glass is deteriorating simultaneously in both the axial and radial directions. The density of the quartz glass tends to be severely degraded. If the currently deposited quartz glass does not meet the expected requirements, the supply of silicon tetrachloride is increased according to the deposition deviation rate to increase the proportioning coefficient. However, increasing the supply of silicon tetrachloride without increasing the supply of oxygen prevents the silicon tetrachloride from being fully oxidized, resulting in increased quartz glass deposition but also quality deterioration. By reducing the initial proportioning coefficient according to the diameter deviation rate, while increasing the supply of silicon tetrachloride, the abnormality of the oxygen supply is reduced, thereby increasing the oxidation effect of silicon tetrachloride, reducing the abnormality of the deposited quartz glass, and improving the quality of the quartz glass.

[0096] When the diameter deviation is less than or equal to the intermediate deviation, or the actual volume is less than or equal to the intermediate volume, it indicates that the radial deposition quality of the current adaptation ratio exceeds expectations but tends to be in a qualified state, and the axial deposition quality also exceeds expectations and tends to be in a qualified state. The insufficient oxidation of silicon tetrachloride can be improved by increasing the oxygen supply and increasing the feeding pressure. In the process of initially determining the ratio coefficient of silicon tetrachloride and oxygen, the oxygen supply is subsequently adjusted to strengthen the oxygen in contact with silicon tetrachloride and enhance the oxidation effect of silicon tetrachloride. At the same time, increasing the feeding pressure enhances the mixing effect of silicon tetrachloride and oxygen, further enhancing the oxidation effect of silicon tetrachloride and improving the yield of deposited quartz glass.

[0097] This invention addresses situations where the deposited quartz glass does not meet expected requirements. It increases the silicon tetrachloride supply based on the deposition deviation rate to increase the proportioning coefficient. However, increasing the silicon tetrachloride supply without increasing the oxygen supply can lead to insufficient oxidation of the silicon tetrachloride, resulting in quality degradation despite increased quartz glass deposition. The invention intelligently reduces the initial proportioning coefficient based on the diameter deviation rate. While increasing the silicon tetrachloride supply, it simultaneously reduces the abnormal amplitude of the oxygen supply, thereby enhancing the oxidation effect of silicon tetrachloride. This allows for rapid increase in deposited quartz glass to meet production demands, followed by a rapid increase in oxygen to ensure sufficient oxidation of silicon tetrachloride, producing quartz glass with the target density. This avoids situations where, after an initial increase in oxygen supply, a further significant increase occurs, leading to excessive oxygen supply, dilution of the plasma flame, and a decrease in reaction temperature, resulting in incomplete silicon tetrachloride oxidation and reduced quality of the deposited quartz glass. By adjusting the initial proportioning coefficient to provide a basis for subsequent quartz deposition while reducing the current initial proportioning coefficient to increase the oxygen supply, the deviation amplitude of oxygen supply during silicon tetrachloride supply control is reduced, thus improving the stability of the quartz glass deposition process.

[0098] Specifically, in response to a diameter deviation value being less than or equal to a preset deviation value, and based on an actual volume value being less than or equal to a preset volume value, the initial silicon tetrachloride supply is increased according to the preset raw material addition amount combined with the current initial ratio coefficient.

[0099] The preset raw material addition amount is determined based on the current quartz glass deposition rate and the maximum deposition rate of the deposition furnace, so as to reflect the extent to which the deposition rate of quartz glass is increased under the condition that the quality of the deposited quartz glass is qualified.

[0100] The initial supply of silicon tetrachloride is positively correlated with the preset amount of raw materials added. Under the current condition of qualified quality, increasing the supply of silicon tetrachloride and oxygen can accelerate the preparation speed of quartz glass.

[0101] When the diameter deviation is less than or equal to the preset deviation and the actual volume is less than or equal to the preset volume, it indicates that the oxidation process is good and exceeds the expected preparation state of quartz glass. The initial silicon tetrachloride supply is increased according to the preset raw material addition amount. The initial silicon tetrachloride supply amount is adjusted according to the current percentage of the initial silicon tetrachloride supply amount to ensure that the preparation speed of quartz glass can be accelerated when the actual preparation process exceeds expectations. Whenever the diameter deviation is detected to be less than or equal to the preset deviation and the actual volume is less than or equal to the preset volume, the initial raw material supply amount is increased. The maximum value of the initial raw material supply amount is set according to the reaction upper limit of different deposition furnaces, and the maximum value of the preset raw material addition amount is also set. The preset raw material addition amount changes with the initial raw material supply amount.

[0102] This invention utilizes positive excitation regulation under dual conditions of diameter deviation and actual volume to accelerate the preparation process. When both radial deposition quality and volume growth rate exceed expectations, the initial raw material supply is proactively increased. When both the diameter deviation and actual volume are less than or equal to a preset deviation and volume value, the oxidation process is considered successful and product quality exceeds expectations. At this point, the raw material supply is proactively increased by a fixed percentage of the initial silicon tetrachloride supply, effectively improving production efficiency and output while ensuring high uniformity of the quartz glass. The maximum value of the initial raw material supply is set based on the reaction limit of the deposition furnace, preventing overloading of the reaction system or product quality deterioration due to excessive acceleration, thus achieving a dynamic balance between quality assurance and capacity optimization. This intelligent positive regulation allows the raw material supply under optimal production conditions to automatically match the actual carrying capacity of the deposition furnace, achieving efficient, stable, and batch production of highly uniform infrared quartz glass while maintaining high quality with radial uniformity and controllable volume.

[0103] The technical solution of the present invention has been described above with reference to the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the scope of protection of the present invention.

Claims

1. A method for preparing highly uniform infrared quartz glass, characterized in that, include, The weight of the quartz glass deposited with initial parameters is obtained to determine the actual deposition amount, and the deposition efficiency is judged by combining the theoretical deposition amount to preliminarily determine the ratio coefficient of silicon tetrachloride to oxygen. The process of determining the qualification of deposition efficiency based on the actual deposition volume includes: Compare the actual sediment volume with the preset sediment volume to determine the qualification of sedimentation efficiency; In response to the actual deposition amount being less than the preset deposition amount, and based on the fact that the actual deposition amount is less than the theoretical deposition amount, the silicon tetrachloride supply is increased according to the deposition deviation rate. The control strategy for silicon tetrachloride supply is determined based on the initial adjustment of the ratio coefficient and the increase of silicon tetrachloride supply to obtain the deposition deficiency value. The profile data of the quartz glass was obtained to determine the diameter deviation value, and the deposition quality was judged to re-determine the ratio coefficient of silicon tetrachloride to oxygen. The process of determining the quality of radial deposition based on diameter deviation values ​​includes: By comparing the diameter deviation value with the preset deviation value, the quality of radial deposition is determined to be acceptable. In response to a diameter deviation value exceeding a preset deviation value, the oxygen supply is increased based on the diameter deviation rate, wherein the diameter deviation rate is determined based on the diameter deviation value and the preset deviation value. Obtain image data of the surface morphology of the quartz glass deposition layer based on the current raw material supply parameters to determine the actual volume value, judge the qualification of the volume growth rate, and determine the subsequent feeding pressure; The process of determining the compliance of volume growth rate based on actual volume values ​​includes: Compare the actual volume value with the preset volume value to determine the compliance of the volume growth rate; In response to the actual volume value being greater than the preset volume value, the feeding pressure is increased according to the volume deviation rate, wherein the volume deviation rate is determined based on the actual volume value and the preset volume value; The passability of the initial ratio of silicon tetrachloride to oxygen is determined based on the diameter deviation value and the actual volume value, so as to re-determine the initial ratio. The process of determining the applicability of the preliminary ratio of silicon tetrachloride to oxygen includes: By comparing the diameter deviation value with the intermediate deviation value, and by comparing the actual volume value with the intermediate volume value, the passability of the ratio coefficient of silicon tetrachloride and oxygen is preliminarily determined. In response to the diameter deviation value being greater than the intermediate deviation value, and based on the actual volume value being greater than the intermediate volume value, the initial proportioning coefficient is determined to be reduced according to the diameter deviation rate, wherein the intermediate deviation value is determined based on the preset deviation value and the failure deviation value, and the intermediate volume value is determined based on the preset volume value and the failure volume value; The initial parameters include the initial proportioning coefficient and the initial feeding pressure. The insufficient deposition value is determined based on the actual deposition amount and the preset deposition amount. The preset deposition amount is determined based on the current production efficiency of the deposition furnace and the target deposition amount of infrared quartz glass. The theoretical deposition amount is the theoretical deposition amount of infrared quartz glass determined based on the current silicon tetrachloride supply and the allowable conversion efficiency of the process. The deposition deviation rate is determined by dividing the difference between the preset deposition amount and the actual deposition amount by the preset deposition amount, and is used to characterize the degree of deviation between the actual deposition amount of the current quartz glass and the target required preset deposition amount. The diameter deviation value is determined based on the maximum and minimum outer diameters of the deposited quartz glass and is used to characterize the radial deposition quality of the deposited quartz glass.

2. The method for preparing highly uniform infrared quartz glass according to claim 1, characterized in that, The process of determining the control strategy for silicon tetrachloride supply includes: By comparing the insufficient deposition value with the preset insufficient value, and in response to the insufficient deposition value being less than or equal to the preset insufficient value, the regulation strategy for silicon tetrachloride supply is determined to be a single adjustment.

3. The method for preparing highly uniform infrared quartz glass according to claim 2, characterized in that, The strategy for regulating the supply of silicon tetrachloride is to adjust it multiple times in response to the relationship between the insufficient deposition value and the preset insufficient value.

4. The method for preparing highly uniform infrared quartz glass according to claim 1, characterized in that, In response to a diameter deviation value exceeding a preset deviation value, and based on the diameter deviation value exceeding a failure deviation value, the deposition furnace is shut down to terminate the oxidation reaction.

5. The method for preparing highly uniform infrared quartz glass according to claim 1, characterized in that, In response to the actual volume value being greater than the preset volume value, and based on the actual volume value being greater than the failure volume value, the deposition furnace is shut down to terminate the oxidation reaction.

6. The method for preparing highly uniform infrared quartz glass according to claim 1, characterized in that, In response to a diameter deviation value being less than or equal to a preset deviation value, and based on an actual volume value being less than or equal to a preset volume value, the initial silicon tetrachloride supply is increased according to the preset raw material addition amount combined with the current initial proportioning coefficient.

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