Method, apparatus and device for screening microwave antenna structure of quantum current sensitive element

Abstract

The application relates to a microwave antenna structure screening method, device and equipment of a quantum current sensitive element. The method comprises the following steps: acquiring simulation models of microwave antennas with different structures; acquiring uniformity indexes of the corresponding simulation models under the condition that the same microwave excitation signal is input to the different simulation models; the uniformity indexes comprise microwave power uniformity and magnetic field uniformity; for each simulation model, the evaluation value of the simulation model corresponding to the microwave antenna under the microwave excitation signal is determined based on the weighted sum of the microwave power uniformity, the magnetic field uniformity and the index weight of the corresponding uniformity index; and the structure corresponding to the microwave antenna with the highest evaluation value is selected as the target structure under the corresponding microwave excitation signal. The method can improve the screening efficiency of the microwave antenna.

Description

Technical Field

[0001] This application relates to the field of quantum precision measurement technology, and in particular to a method, apparatus and device for screening microwave antenna structures for quantum current sensitive elements. Background Technology

[0002] Diamond nitrogen-vacancy (NV) centers are a class of solid-state quantum defects that can be optically initialized, microwave-manipulated, and fluorescently readout at room temperature. Their electron spin energy levels are sensitive to physical quantities such as external magnetic fields and current-induced magnetic fields, and they have important application prospects in the field of quantum current sensing. In the continuous-wave optically detected magnetic resonance (ODMR) readout process based on diamond NV centers, a microwave excitation structure is required to form a near-field microwave environment with suitable intensity and controllable spatial distribution near the diamond NV center layer to stably drive the electron spin transitions of the NV centers.

[0003] Traditional microwave excitation methods often employ external printed circuit board (PCB) antennas, discrete metal coils, or coplanar waveguides. However, these traditional structures have significant shortcomings when dealing with highly integrated microelectromechanical systems (MEMS) quantum current sensing elements: firstly, external antennas require mechanical bonding to couple with the diamond sensing element, making it difficult to guarantee assembly gaps and repeatability accuracy; secondly, traditional structures occupy a large space, hindering integrated integration with diamond chips, silicon-based supports, microwave feed lines, and optical windows. More importantly, within the limited area of ​​a MEMS quantum current sensing element, pursuing only local microwave power enhancement can easily lead to local hotspots or magnetic field concentration; conversely, simply expanding the coupling region may reduce effective microwave power, making it difficult to simultaneously meet the requirements of microwave excitation efficiency, power distribution consistency, and near-field magnetic field uniformity.

[0004] Therefore, how to quickly and objectively select the optimal structure from a variety of candidate antenna structures that can balance microwave power output capability and magnetic field distribution uniformity has become an urgent problem to be solved. Summary of the Invention

[0005] Therefore, it is necessary to provide a microwave antenna structure screening method, apparatus, and device that can improve the screening efficiency of quantum current sensitive elements, addressing the aforementioned technical problems.

[0006] In a first aspect, this application provides a method for screening microwave antenna structures for quantum current-sensitive elements, including:

[0007] Obtain simulation models of microwave antennas with different structures;

[0008] When the same microwave excitation signal is input to different simulation models, the uniformity index of the corresponding simulation models is obtained; the uniformity index includes microwave power uniformity and magnetic field uniformity.

[0009] For each simulation model, the evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal is determined by the weighted sum between the index weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices.

[0010] The structure corresponding to the microwave antenna with the highest evaluation value is selected as the target structure under the corresponding microwave excitation signal.

[0011] In one embodiment, the microwave antenna includes a diamond sensitive substrate and a metal microwave antenna layer formed on the surface of the diamond sensitive substrate. The metal microwave antenna layer is used to form a microwave power density distribution on the surface of the diamond sensitive substrate. The metal microwave antenna layer includes a central circular opening, a vertical slit communicating with the central circular opening, and a bottom oblique extension region located at the lower end of the vertical slit. The central circular opening, the vertical slit, and the bottom oblique extension region together constitute an Ω-shaped opening region, enabling the metal microwave antenna layer to form a microwave current path distributed around the central opening on the surface of the diamond sensitive substrate. The microwave current path is used to form a magnetic field strength distribution on the surface of the diamond sensitive substrate. Different microwave antennas form different structures by taking different values ​​for the radius of the central circular opening, the width of the vertical slit, and the half-width of the bottom oblique extension region.

[0012] In one embodiment, when the same microwave excitation signal is input to different simulation models, obtaining the microwave power uniformity of the corresponding simulation models includes:

[0013] For each microwave antenna simulation model, when a microwave excitation signal is input to the simulation model through the feed point on the corresponding metal microwave antenna layer of the microwave antenna simulation model, the microwave power density collected at at least one preset first sampling point on the simulation model is obtained; the preset first sampling point is located on the surface of the diamond sensitive substrate.

[0014] Based on the average microwave power density between different preset first sampling points on the simulation model, the power standard deviation of the microwave power density of the simulation model is determined.

[0015] The microwave power uniformity of the simulation model is determined based on the ratio between the power standard deviation and the average microwave power density.

[0016] In one embodiment, obtaining the magnetic field uniformity of the corresponding simulation model when the same microwave excitation signal is input to different simulation models includes:

[0017] For each microwave antenna simulation model, when a microwave excitation signal is input to the simulation model through the feed point on the corresponding metal microwave antenna layer of the microwave antenna simulation model, the magnetic field strength collected at at least one preset second sampling point on the simulation model is obtained; the preset second sampling point is located at a preset distance above the surface of the diamond sensitive substrate.

[0018] The magnetic field standard deviation of the magnetic field strength of the simulation model is determined based on the average magnetic field strength between different preset second sampling points on the simulation model.

[0019] The magnetic field uniformity of the simulation model is determined based on the ratio between the standard deviation of the magnetic field and the average magnetic field strength.

[0020] In one embodiment, the feed point is located at the middle of the lower edge of the diamond sensitive substrate and corresponds to the bottom bevel extension area. This allows the microwave excitation signal to be transmitted through the bottom bevel extension area, the metal regions on both sides of the vertical slit, and the metal region around the central circular opening, forming a near-field microwave excitation on the surface of the diamond sensitive substrate to drive the spin transition of color center electrons.

[0021] In one embodiment, the evaluation value of the microwave antenna corresponding to the simulation model under the microwave excitation signal is determined based on the weighted sum of the index weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices, including:

[0022] Obtain the microwave power density with the highest numerical value in different simulation models;

[0023] The evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal is determined based on the ratio between the maximum microwave power density in the simulation model and the maximum microwave power density in all simulation models, and the sum of the weighted sums.

[0024] Secondly, this application also provides a microwave antenna structure screening device for quantum current sensitive elements, comprising:

[0025] The simulation module is used to obtain simulation models of microwave antennas with different structures;

[0026] The acquisition module is used to acquire the uniformity index of the corresponding simulation model when the same microwave excitation signal is input to different simulation models; the uniformity index includes microwave power uniformity and magnetic field uniformity.

[0027] The evaluation module is used to determine the evaluation value of the microwave antenna corresponding to each simulation model under microwave excitation signal based on the weighted sum between the index weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices.

[0028] The selection module is used to select the structure corresponding to the microwave antenna with the highest evaluation value as the target structure under the corresponding microwave excitation signal.

[0029] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0030] Obtain simulation models of microwave antennas with different structures;

[0031] When the same microwave excitation signal is input to different simulation models, the uniformity index of the corresponding simulation models is obtained; the uniformity index includes microwave power uniformity and magnetic field uniformity.

[0032] For each simulation model, the evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal is determined by the weighted sum between the index weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices.

[0033] The structure corresponding to the microwave antenna with the highest evaluation value is selected as the target structure under the corresponding microwave excitation signal.

[0034] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the following steps:

[0035] Obtain simulation models of microwave antennas with different structures;

[0036] When the same microwave excitation signal is input to different simulation models, the uniformity index of the corresponding simulation models is obtained; the uniformity index includes microwave power uniformity and magnetic field uniformity.

[0037] For each simulation model, the evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal is determined by the weighted sum between the index weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices.

[0038] The structure corresponding to the microwave antenna with the highest evaluation value is selected as the target structure under the corresponding microwave excitation signal.

[0039] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, performs the following steps:

[0040] Obtain simulation models of microwave antennas with different structures;

[0041] When the same microwave excitation signal is input to different simulation models, the uniformity index of the corresponding simulation models is obtained; the uniformity index includes microwave power uniformity and magnetic field uniformity.

[0042] For each simulation model, the evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal is determined by the weighted sum between the index weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices.

[0043] The structure corresponding to the microwave antenna with the highest evaluation value is selected as the target structure under the corresponding microwave excitation signal.

[0044] The aforementioned method, apparatus, and equipment for screening microwave antenna structures for quantum current sensing elements transform the traditional antenna selection process, which relies on a single physical quantity or design experience, into an objective quantitative evaluation based on the uniformity of multiple physical fields by constructing simulation models of microwave antennas with different structures and simultaneously extracting two types of uniformity indicators—power and magnetic field—under identical microwave excitation conditions. This method, through the introduction of an adjustable weighted summation mechanism, can flexibly screen the optimal structure that balances power output capability and magnetic field distribution uniformity, based on the different emphases of MEMS quantum current sensing elements on microwave driving intensity and ODMR excitation consistency. This avoids the problems of hotspot concentration or uneven magnetic field distribution caused by pursuing only localized high power, significantly improving the objectivity, repeatability, and adaptation efficiency of antenna structure screening. It provides quantifiable parameterization for the design of microwave excitation structures for highly integrated, fiber-free quantum sensing chips. Attached Figure Description

[0045] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0046] Figure 1 This is an application environment diagram of a microwave antenna structure screening method provided in this embodiment;

[0047] Figure 2 A flowchart illustrating the first microwave antenna structure selection method provided in this embodiment;

[0048] Figure 3 This is a schematic diagram of the geometric parameters of a microwave antenna provided in this embodiment;

[0049] Figure 4 This is a schematic diagram of a three-dimensional integrated structure of a microwave antenna provided in this embodiment;

[0050] Figure 5 This embodiment provides a schematic diagram of the grid division for a C-structure Ω-type microwave antenna.

[0051] Figure 6This is a flowchart illustrating a step for determining microwave power uniformity in this embodiment.

[0052] Figure 7 This embodiment provides a comparison diagram of microwave power distribution across multiple scan lines of a microwave antenna.

[0053] Figure 8 This embodiment provides a comparison diagram of microwave power uniformity and maximum power of a microwave antenna.

[0054] Figure 9 This embodiment provides a comparison diagram of microwave power distribution along the y-axis at the center of a microwave antenna.

[0055] Figure 10 This is a flowchart illustrating a step for determining magnetic field uniformity in this embodiment.

[0056] Figure 11 This embodiment provides a simulation diagram of the magnetic field distribution of a microwave antenna.

[0057] Figure 12 This embodiment provides a nine-point magnetic field uniformity evaluation diagram for a microwave antenna.

[0058] Figure 13 This is a flowchart illustrating a step for determining an evaluation value, as provided in this embodiment.

[0059] Figure 14 This is a structural block diagram of a microwave antenna structure screening device provided in this embodiment;

[0060] Figure 15 This is an internal structural diagram of a computer device provided in this embodiment. Detailed Implementation

[0061] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0062] The microwave antenna structure screening method provided in this application embodiment can be applied to, for example... Figure 1In the application environment shown, terminal 102 communicates with server 104 via a network. A data storage system can store the data that server 104 needs to process. The data storage system can be integrated onto server 104 or placed on a cloud or other network server. The computer device acquires simulation models of microwave antennas with different structures; when the same microwave excitation signal is input to different simulation models, the uniformity index of the corresponding simulation model is obtained; the uniformity index includes microwave power uniformity and magnetic field uniformity; for each simulation model, based on the weighted sum between the index weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices, the evaluation value of the microwave antenna corresponding to the simulation model under the microwave excitation signal is determined; the structure corresponding to the microwave antenna with the highest evaluation value is selected as the target structure under the corresponding microwave excitation signal. Terminal 102 can be, but is not limited to, various personal computers, laptops, smartphones, tablets, IoT devices, and portable wearable devices. IoT devices can be smart speakers, smart TVs, smart air conditioners, smart vehicle devices, etc. Portable wearable devices can be smartwatches, smart bracelets, head-mounted devices, etc. Server 104 can be implemented using a standalone server or a server cluster composed of multiple servers.

[0063] In one exemplary embodiment, such as Figure 2 As shown, a microwave antenna structure screening method is provided, which can be applied to... Figure 1 Taking a computer device as an example, the explanation includes the following steps S201 to S204. Wherein:

[0064] S201 obtains simulation models of microwave antennas with different structures.

[0065] The microwave antenna is a thin-film metal structure with an Ω-shaped opening integrated on the surface of a diamond substrate, used to generate near-field microwave-driven NV color centers. The microwave antenna includes a diamond-sensitive substrate and a metal microwave antenna layer formed on the surface of the diamond-sensitive substrate; the metal microwave antenna layer is used to form a microwave power density distribution on the surface of the diamond-sensitive substrate.

[0066] The metal microwave antenna layer includes a central circular opening, a vertical slit connected to the central circular opening, and a bottom oblique extension region located at the lower end of the vertical slit. The central circular opening, the vertical slit, and the bottom oblique extension region together form an Ω-shaped opening region, enabling the metal microwave antenna layer to form microwave current paths distributed around the central opening on the surface of the diamond sensitive substrate. The microwave current paths are used to form a magnetic field intensity distribution on the surface of the diamond sensitive substrate. Different microwave antennas form different structures by taking different values ​​for the radius of the central circular opening, the width of the vertical slit, and the half-width of the bottom oblique extension region.

[0067] For example, such as Figure 3The diagram shows the geometric parameters of a microwave antenna formed on the surface of a diamond-sensitive substrate with planar dimensions of 5.0 mm × 5.0 mm. The metallic microwave antenna layer includes an outer metallic region, a central circular opening, a vertical slit communicating with the central circular opening, a bottom beveled extension region located below the vertical slit, and a feed point. The central circular opening provides an optical access channel and a microwave coupling region. The vertical slit alters the spacing between the metal current paths on both sides of the Ω-shaped structure. The bottom beveled extension region improves the transition between the feed point and the main metallic region, allowing microwave signals to enter the Ω-shaped metal electrode from the feed point and form near-field microwave excitation near the central region.

[0068] In some embodiments, structures A, B, and C have the same Ω-shaped topology, but employ different central circular opening radii R, vertical slit width W, structural length L, bottom retention height H, and bottom extension half-width baseHalfW. Structure A is a small circular slit type with R = 0.65 mm, W = 0.18 mm, L = 2.25 mm, H = 0.28 mm, and baseHalfW = 0.75 mm; structure B is a medium circular slit type with R = 0.90 mm, W = 0.42 mm, L = 2.40 mm, H = 0.25 mm, and baseHalfW = 1.15 mm; structure C is a large circular slit type with R = 1.15 mm, W = 0.75 mm, L = 2.52 mm, H = 0.22 mm, and baseHalfW = 1.60 mm. The three structures correspond to the parameter changes that gradually unfold from a compact microwave current path to a wide opening and wide transition structure.

[0069] Geometrically, the connection position between the central circular opening and the vertical slit is determined by the radius R of the circular opening and the width W of the slit. With the center of the diamond-sensitive substrate as the origin, the ordinate of the connection point between the vertical boundaries on both sides of the slit and the central circular opening can be expressed by the following formula (1):

[0070] (1)

[0071] in, Let be the ordinate of the connection point between the circular opening and the vertical slit. From formula (1), it can be seen that the structural design must satisfy W / 2 < R; otherwise, the vertical slit cannot form a continuous Ω-shaped opening boundary with the central circular opening. Structures A, B, and C all satisfy this constraint. In structure C, because R and W increase simultaneously, the transition region between the circular opening and the slit is wider, and the current path expands outward from the central region, which helps reduce the local field concentration at the root of the slit.

[0072] The transition position between the lower end of the vertical slit and the bottom bevel extension area is determined by the structural length L, the bottom retained height H, and the bottom extension half-width baseHalfW. The position of the lower opening can be represented by the following formula (2):

[0073] (2)

[0074] in, This refers to the longitudinal position of the bottom bevel extension area near the feed point. For a 5.0 mm × 5.0 mm diamond sensitive substrate, its lower boundary is located at -2.5 mm. Therefore, the bottom metal safety margin is:

[0075] (3)

[0076] Substituting the three structural parameters, we can see that the bottom metal safety margin is 0.53 mm for structure A, 0.35 mm for structure B, and 0.20 mm for structure C, all of which are greater than the minimum retention requirement of 0.08 mm. Therefore, even with the gradually increasing central opening and bottom expansion, structure C can still retain the necessary metal margin near the lower boundary of the substrate, meeting the mechanical integrity and pattern processing requirements near the power supply end.

[0077] For example, such as Figure 4 The schematic diagram of the three-dimensional integrated structure of the microwave antenna shown illustrates three structures, A, B, and C. All three structures can be formed on the surface of a diamond-sensitive substrate of the same size and constitute a three-dimensional integrated microwave antenna using a thin-film metal structure. The main differences between the three structures lie in the size of the central circular opening, the width of the vertical slit, and the extent of the bottom bevel extension. Structure A has a smaller central opening and a narrower vertical slit, resulting in a more concentrated metal coverage area and allowing the local power to remain at a relatively high level near the slit. Structure B strikes a balance between opening and slit sizes, balancing power output and spatial expansion. Structure C has a larger central opening, a larger vertical slit, and a larger bottom bevel extension area, resulting in a more outward-spreading current path and easier diffusion of the microwave magnetic field within the effective diamond region.

[0078] In some embodiments, the simulation model of microwave antennas with different structures can be obtained by: performing mesh generation on each structure of the microwave antenna to obtain a mesh model of the corresponding structure; and constructing a simulation model of the microwave antenna based on the mesh model.

[0079] For example, such as Figure 5The diagram showing the mesh generation of the C-structure Ω-type microwave antenna illustrates how mesh generation was performed on the C-structure in this embodiment to ensure the reliability of subsequent microwave power and magnetic field distribution simulations. In the mesh model corresponding to the C-structure, there are 2745 triangular facets and 4752 tetrahedrals, with a maximum mesh side length of 0.0002 m. The mesh generation method was manual. Because the C-structure has the largest opening size and more pronounced boundary changes, illustrating its mesh generation reflects the discretization method for this type of Ω-type structure in numerical simulation. Simulation models for structures A and B can also be established using the same or similar mesh scales to ensure consistency in comparisons between different structures.

[0080] S202 obtains the uniformity index of the corresponding simulation model when the same microwave excitation signal is input to different simulation models.

[0081] The uniformity indicators include microwave power uniformity and magnetic field uniformity. Microwave power uniformity is a quantitative indicator that measures the consistency of the spatial distribution of microwave power density generated by a microwave antenna on the surface of a diamond-sensitive substrate. It reflects the flatness of the microwave power distribution within the effective coupling area of ​​the diamond-sensitive substrate surface (especially at the preset sampling points). Higher uniformity indicates a more uniform power distribution and smaller differences in local hot spots or undercooled areas.

[0082] Magnetic field homogeneity is a quantitative indicator that measures the spatial consistency of the near-field magnetic field intensity generated by a microwave antenna above the surface of a diamond-sensitive substrate (i.e., at the height of the NV color center layer). It reflects the consistency of magnetic field excitation at the locations of each color center in the diamond NV color center set. For continuous wave ODMR readout, higher magnetic field homogeneity means that the microwave magnetic field intensity felt by NV color centers at different locations is more similar, thus enabling them to be driven more uniformly and obtaining narrower, more symmetrical ODMR spectra.

[0083] It should be noted that the microwave excitation signal in this embodiment is input through a feed point on the simulation model, which also exists on the microwave antenna corresponding to the simulation model. The feed point is located in the middle of the lower edge of the diamond sensitive substrate and corresponds to the bottom oblique extension area. It is used to transmit the microwave excitation signal through the bottom oblique extension area, the metal areas on both sides of the vertical slit, and the metal area around the central circular opening, forming a near-field microwave excitation on the surface of the diamond sensitive substrate to drive the spin transition of the color center electrons.

[0084] In some embodiments, the same microwave excitation signal is input to the feed points on different simulation models; the microwave power uniformity and magnetic field uniformity at different preset sampling points are obtained from the simulation models under the excitation state of the microwave excitation signal.

[0085] For each simulation model, S203 determines the evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal based on the weighted sum between the index weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices.

[0086] In some embodiments, for each simulation model, a first product between the microwave power uniformity of the simulation model and the corresponding index weight of microwave power uniformity is determined, and a second product between the magnetic field uniformity and the corresponding index weight of magnetic field uniformity is determined; the sum of the first product and the second product is used as the evaluation value of the microwave antenna corresponding to the simulation model under the microwave excitation signal.

[0087] S204 selects the structure corresponding to the microwave antenna with the highest evaluation value as the target structure under the corresponding microwave excitation signal.

[0088] In some embodiments, the structure corresponding to the microwave antenna with the highest evaluation value is taken as the target structure under the corresponding microwave excitation signal.

[0089] It should be noted that the multi-configuration Ω-shaped integrated microwave antenna can serve as the microwave excitation unit for a fiber-free MEMS quantum current sensing element. This sensing element includes a silicon-based support structure, a diamond NV sensing chip, a microwave feeding structure, and an optical window structure. The diamond NV sensing chip is fixed on the silicon-based support structure, and the Ω-shaped integrated microwave antenna is formed on the surface of the diamond NV sensing chip, with its feed point connected to the microwave feeding structure. The optical window structure is correspondingly positioned to the central circular opening of the Ω-shaped antenna, enabling laser incident and fluorescence output without introducing fiber coupling structures. By introducing the preferred C structure or the candidate B structure into the above MEMS structure, a stable microwave excitation channel can be formed within a compact quantum current sensor, providing a structural basis for diamond-silicon heterogeneous integration and wafer-level fabrication. This embodiment illustrates the influence of the central circular opening, vertical slit, bottom retention height, and bottom extended half-width on microwave power distribution and magnetic field uniformity through parametric modeling and power-magnetic field co-evaluation of three homogeneous Ω-shaped microwave antennas (A, B, and C). Under the same diamond size, equivalent current, and observation plane conditions, structure C exhibits the best performance in terms of magnetic field uniformity and can be considered the preferred structure for high-uniformity MEMS quantum current sensing elements; structure B has advantages in power output and can be considered as an alternative structure with a focus on microwave power coupling capability. The above structure selection method avoids the problem of determining antenna size solely based on a single field strength or power index, and can provide repeatable and verifiable parameterization for the design of microwave excitation structures in fiber-free MEMS quantum current sensors.

[0090] The aforementioned microwave antenna structure selection method constructs simulation models of microwave antennas with different structures and extracts two uniformity indices—power and magnetic field—under identical microwave excitation conditions. This transforms the traditional antenna selection process, which relies on a single physical quantity or design experience, into an objective quantitative evaluation based on the uniformity of multiple physical fields. By introducing an adjustable weighted summation mechanism, this method can flexibly select the optimal structure that balances power output capability and magnetic field distribution uniformity, based on the different emphases of MEMS quantum current sensing elements on microwave driving intensity and ODMR excitation consistency. This avoids the problems of hotspot concentration or uneven magnetic field distribution caused by pursuing only local high power, significantly improving the objectivity, repeatability, and adaptation efficiency of antenna structure selection. It provides quantifiable parameterization for the design of microwave excitation structures with high integration and no fiber optic quantum sensing chips.

[0091] Figure 6 This is a flowchart illustrating the steps for determining microwave power uniformity in one embodiment. This embodiment refines the steps for obtaining the microwave power uniformity of different simulation models when the same microwave excitation signal is input to them, as described in the previous embodiments. This embodiment provides an optional method for determining microwave power uniformity, including the following steps:

[0092] For each microwave antenna simulation model, S601 obtains the microwave power density collected at at least one preset first sampling point on the simulation model when a microwave excitation signal is input to the simulation model through the feed point on the corresponding metal microwave antenna layer of the microwave antenna simulation model.

[0093] The first sampling point is preset to be located on the surface of the diamond sensitive substrate.

[0094] In some embodiments, this embodiment first extracts the two-dimensional microwave power distribution on the surface of the diamond sensitive substrate for the three Ω-type structures A, B, and C, and sets three equally spaced scan lines parallel to the x-axis within the effective coupling region. For example... Figure 7The comparison diagram of microwave power distribution across multiple scan lines of the microwave antennas shown indicates that structures A, B, and C all exhibit varying degrees of power troughs near the central optical opening and vertical slit. This is because these areas are metal openings or slits, disrupting the local metal continuity, and microwave energy primarily propagates along the opening edges and outer metal paths. Structure A has the smallest central opening radius and vertical slit width, resulting in a relatively narrow power drop region along the three scan lines, indicating that the small circular slit structure can maintain strong local microwave confinement near the central region. Structure B has a moderate central opening and slit width, with a deeper power trough at the central scan line, but the two outer scan lines still maintain a relatively high power level, indicating that the medium circular slit structure can achieve a compromise between local power output and lateral distribution. Structure C further increases the size of the central opening and vertical slit, significantly widening the low-power range in the central region, indicating that its microwave current path extends outwards into the metal region, resulting in a slight decrease in local central power, but with a smoother power transition. At this point, for each microwave antenna simulation model, when a microwave excitation signal is input to the simulation model through the feed point on the corresponding metal microwave antenna layer of the microwave antenna simulation model, the microwave power density collected at at least one preset first sampling point on the simulation model can be directly obtained.

[0095] S602 determines the power standard deviation of the microwave power density of the simulation model based on the average microwave power density between different preset first sampling points on the simulation model.

[0096] For example, this embodiment uses the case of k scan lines, each scan line having n preset first sampling points, as an example for illustration. The first scan line The microwave power density at each sampling point is ,in, , Then the area within the scan line region can be determined based on the following formula (4):

[0097] (4)

[0098] in, The average microwave power density between different preset first sampling points. This represents the microwave power density collected at the nth preset first sampling point on the kth scan line. This represents the power standard deviation of the simulation model.

[0099] S603 determines the microwave power uniformity of the simulation model based on the ratio between the power standard deviation and the average microwave power density.

[0100] In some embodiments, the microwave power uniformity of the simulation model is determined based on the ratio between the power standard deviation and the average microwave power density, according to the following formula (5).

[0101] (5)

[0102] in, To ensure microwave power uniformity in the simulation model, The average microwave power density between different preset first sampling points. This represents the power standard deviation of the simulation model.

[0103] For example, such as Figure 8 The microwave antenna power uniformity and maximum power comparison diagram shown indicates that the microwave power uniformity of the three structures is at a similar level. Structure A has a power uniformity of approximately 71%, structure B approximately 70%, and structure C approximately 69%, indicating that all three homogeneous Ω-type structures can form a relatively stable power distribution on the diamond surface. Further comparison of average power density and peak power density shows that structure B has slightly higher average and peak power densities than structures A and C, with a peak power density of approximately 4.1 W·m. -2 The average power density is approximately 2.1 W·m³. -2 This indicates that structure B has a stronger microwave power output capability under the same excitation conditions, making it a suitable candidate structure for structures that prioritize microwave drive intensity. In contrast, structure C has slightly lower peak and average power, but its power distribution does not have excessively strong local spikes, suggesting that the large circular wide-slit structure helps reduce power concentration while sacrificing a small amount of local power intensity.

[0104] For example, such as Figure 9 The comparison diagram of microwave power distribution along the central y-axis of the microwave antennas shows that the power distribution along the central y-axis further reflects the influence of the central opening, vertical slit, and bottom bevel extension region on the main coupling path. The power valley in the central region of structure A is approximately -29 dB, while that of structure B drops to approximately -32 dB, and that of structure C drops to approximately -33 to -34 dB. This result indicates that as R and W gradually increase, the segmentation effect of the central optical opening and slit on the metallic current path strengthens, and the local power decrease near the central axis is more significant. However, in the positive y-axis region, the power of all three structures gradually recovers to approximately -21 to -22 dB, indicating that all three Ω-type structures can form an effective microwave transmission path in the metallic region far from the central opening. Therefore, structure A is more conducive to maintaining local power along the central axis, structure B achieves a better balance between power intensity and opening size, and structure C is more suitable for improving the subsequent magnetic field distribution by expanding the opening and extending the current path.

[0105] In the above embodiments, by setting multiple preset sampling points on the surface of the diamond sensitive substrate, and calculating the overall average value and standard deviation based on the microwave power density collected at each point, the microwave power uniformity is quantitatively characterized by the ratio of the standard deviation to the average value. This method can objectively and quantitatively evaluate the consistency of power distribution in the effective coupling area of ​​different Ω-type antenna structures. Compared with only observing the peak power or subjectively judging the power distribution, the evaluation method based on statistical indicators eliminates human bias, making the conclusions of lateral comparison of the influence of different geometric parameters (such as the center opening radius and slit width) on the power distribution more reliable. This provides a unified quantitative basis for subsequent structural selection that balances power output capability and avoids local hot spots.

[0106] Figure 10 This is a flowchart illustrating the steps for determining magnetic field uniformity in one embodiment. This embodiment refines the steps in the above embodiment where the evaluation value of the microwave antenna corresponding to the simulation model under a microwave excitation signal is determined based on the weighted sum of the weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices. This embodiment provides an optional method for determining magnetic field uniformity, including the following steps:

[0107] For each microwave antenna simulation model, S1001 obtains the magnetic field strength collected at at least one preset second sampling point on the simulation model when a microwave excitation signal is input to the simulation model through the feed point on the corresponding metal microwave antenna layer of the microwave antenna simulation model.

[0108] The second sampling point is located at a preset distance above the surface of the diamond-sensitive substrate.

[0109] In some embodiments, this embodiment uses the Biot-Savart equivalent coil model to calculate the near-field magnetic field of structures A, B, and C. During the calculation, the outer boundary and Ω-shaped opening boundary of the metal antenna are discretized into equivalent current segments, with the equivalent current set to 80 mA, and the observation plane located 0.08 mm above the antenna layer. Based on this, for each microwave antenna simulation model, when a microwave excitation signal is input to the simulation model through the feed point on the corresponding metal microwave antenna layer of the microwave antenna simulation model, the magnetic field strength collected at at least one preset second sampling point r on the simulation model is obtained, as shown in the following formula (6).

[0110] (6)

[0111] in, The number of discrete line segments, For the first An equivalent current line segment vector, The center position of the line segment. The equivalent conductor radius is used. This expression introduces an equivalent radius term in the denominator, which avoids non-physical singular values ​​when the observation point is too close to the current segment, making it more suitable for comparing the magnetic field distribution trends of different Ω-type geometries.

[0112] For example, such as Figure 11 The simulated magnetic field distribution of the microwave antenna shown indicates that, under the same equivalent current and observation height, the magnetic field of structure A is mainly concentrated near the bottom of the slit and the edge of the opening, with a prominent local strong field region and a 9-point standard deviation uniformity of 38.24%. The magnetic field distribution of structure B is more extended than that of structure A, with the local peak weakened and the 9-point standard deviation uniformity improved to 64.07%. Structure C has the largest central opening, slit width, and bottom extension half-width, with the current path extending further outward. The magnetic field distribution within the effective area of ​​the diamond surface is more gradual, and the 9-point standard deviation uniformity reaches 82.70%. These results demonstrate that increasing the radius R of the central circular opening, the width W of the vertical slit, and the bottom extension half-width baseHalfW does not simply reduce the effective effect of the antenna, but rather redistributes the current path at the metal edge, thereby reducing local strong field concentration and improving the magnetic field uniformity within the diamond sensitive area.

[0113] S1002 determines the standard deviation of the magnetic field strength of the simulation model based on the average magnetic field strength between different preset second sampling points on the simulation model.

[0114] In some embodiments, the magnetic field standard deviation of the magnetic field strength of the simulation model is determined based on the following formula (7), according to the average magnetic field strength between different preset second sampling points on the simulation model.

[0115] (7)

[0116] in, The average magnetic field strength between different preset second sampling points. The magnetic field strength collected at the i-th preset second sampling point. This represents the standard deviation of the magnetic field in the simulation model.

[0117] S1003 determines the magnetic field uniformity of the simulation model based on the ratio between the standard deviation of the magnetic field and the average magnetic field strength.

[0118] In some embodiments, the magnetic field uniformity of the simulation model is determined based on the ratio between the standard deviation of the magnetic field and the average magnetic field strength, according to the following formula (8).

[0119] (8)

[0120] in, To ensure the magnetic field uniformity of the simulation model, The average magnetic field strength between different preset second sampling points. This represents the standard deviation of the magnetic field in the simulation model.

[0121] For example, such as Figure 12 The nine-point magnetic field uniformity evaluation diagram of the microwave antenna shown indicates that structure A exhibits a significant magnetic field peak near P8, leading to substantial differences among the nine reference points, which is the main reason for its low uniformity. Structure B still has a high magnetic field value at P8, but the peak intensity is lower than that of structure A, and the distribution differences among other reference points have also converged. Structure C, except for the reference point near the central opening, shows relatively smooth magnetic field changes at the other reference points, with the smallest overall fluctuation amplitude in the nine-point curve, thus achieving the highest standard deviation uniformity. Structure C has a better at weakening effect on local strong fields and can provide a more balanced near-field magnetic field environment over a larger area. Structure A, with its smaller R, W, and baseHalfW values, exhibits strong central local power retention, but its magnetic field is significantly concentrated in local regions, making it difficult to meet the requirements for high-uniformity microwave excitation. Structure B demonstrates higher average and peak power among the three structures, while its magnetic field uniformity is significantly improved compared to structure A, making it suitable as a candidate structure prioritizing power output. Although structure C has a more pronounced local power trough along the central axis and its average and peak power are slightly lower than structure B, its magnetic field distribution is the most uniform, with a 9-point standard deviation uniformity of 82.70%, making it more suitable for MEMS quantum current sensing elements with high requirements for ODMR excitation uniformity.

[0122] In the above embodiments, multiple sampling points are set at a preset distance above the surface of the diamond sensitive substrate to collect magnetic field strength and calculate its average value and standard deviation. Then, the ratio of the standard deviation to the average value is used to quantitatively evaluate the near-field magnetic field uniformity of different Ω-type antenna structures. This method transforms the original qualitative or local peak-dependent evaluation of magnetic field distribution into a quantifiable and repeatable comparison process based on statistical indicators, which can accurately reflect the influence of the antenna structure on the excitation consistency of various parts of the diamond NV color center layer. Combined with the standard deviation uniformity index, it can effectively identify local magnetic field concentration problems caused by improper geometric parameter settings (such as too small an opening or too narrow a slit), providing an objective basis for screening the preferred antenna structure that can provide a balanced magnetic field environment over a large range and improve ODMR readout consistency.

[0123] Figure 13 This is a flowchart illustrating the steps for determining the evaluation value in one embodiment. This embodiment refines the steps for obtaining the magnetic field uniformity of different simulation models when inputting the same microwave excitation signal to different simulation models, as described in the previous embodiment. This embodiment provides an optional method for determining the evaluation value, including the following steps:

[0124] S1301 obtains the microwave power density with the highest value in different simulation models.

[0125] In some embodiments, when the same microwave excitation signal is input to different simulation models, the microwave power density can be collected at a preset first sampling point on the surface of the simulation model; and the microwave power density with the largest value among all simulation models is selected.

[0126] S1302 determines the evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal based on the ratio between the maximum microwave power density in the simulation model and the maximum microwave power density in all simulation models, and the sum of the weighted sums.

[0127] In some embodiments, based on the following formula (9), the evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal is determined according to the ratio between the maximum microwave power density in the simulation model and the maximum microwave power density in all simulation models and the sum of the weighted sums.

[0128] (9)

[0129] in, For the first The comprehensive evaluation value of the structure For magnetic field uniformity, For power uniformity, For the first The microwave power density with the highest value among different preset first sampling points in the simulation model of the various structures. The maximum microwave power density is given by different simulation models. , , These are the weighting coefficients for magnetic field uniformity, power uniformity, and the maximum microwave power density, respectively, and they satisfy... .in, , , These are the weighting coefficients for magnetic field uniformity, power uniformity, and maximum power, respectively, and they satisfy... For MEMS quantum current sensing elements, the uniformity of microwave excitation is generally more important than local peak power. Therefore, in this embodiment, magnetic field uniformity can be taken as the sovereign weight. and Under this evaluation criterion, although structure B has an advantage in terms of maximum power, structure C, with its 82.70% uniformity of the 9-point magnetic field standard deviation and power distribution performance still within an acceptable range, becomes the preferred structure in this embodiment for microwave excitation of highly consistent NV color centers.

[0130] It should be noted that, from the perspective of parameter influence, the small circular narrow slit parameter of structure A brings the current path closer to the central region, maintaining higher local power, but its magnetic field distribution is concentrated, resulting in lower nine-point uniformity. Structure B, by increasing R, W, and baseHalfW, enhances power output capability and significantly improves magnetic field uniformity compared to structure A, making it suitable for scenarios with high microwave power requirements. Structure C further increases R to 1.15 mm, W to 0.75 mm, and baseHalfW to 1.60 mm, expanding the current path outward, reducing local strong field concentration, and achieving the highest magnetic field uniformity, making it suitable for MEMS quantum current sensing elements that prioritize ODMR excitation consistency. Therefore, in this embodiment, structure C is determined as the preferred size scheme under the constraint of magnetic field uniformity, while structure B is considered as a candidate scheme under the constraint of high power output.

[0131] In the above embodiments, by identifying the global maximum microwave power density among all candidate simulation models as a normalization benchmark, and incorporating the ratio of the maximum power density of a single model to this benchmark into the evaluation value calculation, a bounded and comparable quantification of microwave power output capability is achieved. Simultaneously, this ratio is summed with a weighted sum reflecting power uniformity and magnetic field uniformity to form a comprehensive evaluation value that balances "absolute output capability" and "multi-physics distribution consistency," avoiding extreme tendencies such as relying solely on uniformity indicators while neglecting drive strength, or pursuing high strength while ignoring distribution quality. This scheme allows for comprehensive ranking of antennas with different structures under a unified dimension, providing flexible and quantitative decision support for dynamically adjusting weight coefficients and quickly locking in the optimal compromise solution based on actual application requirements (such as emphasizing drive strength or excitation consistency).

[0132] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0133] Based on the same inventive concept, this application also provides a microwave antenna structure screening device for implementing the microwave antenna structure screening method described above. The solution provided by this device is similar to the solution described in the above method; therefore, the specific limitations in one or more microwave antenna structure screening device embodiments provided below can be found in the limitations of the microwave antenna structure screening method described above, and will not be repeated here.

[0134] In one exemplary embodiment, such as Figure 14 As shown, a microwave antenna structure screening device is provided, including: a simulation module 1401, an acquisition module 1402, an evaluation module 1403, and a selection module 1404, wherein:

[0135] Simulation module 1401 is used to obtain simulation models of microwave antennas with different structures;

[0136] The acquisition module 1402 is used to acquire the uniformity index of the corresponding simulation model when the same microwave excitation signal is input to different simulation models; the uniformity index includes microwave power uniformity and magnetic field uniformity.

[0137] Evaluation module 1403 is used to determine the evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal for each simulation model based on the weighted sum between the index weights of microwave power uniformity and magnetic field uniformity and their corresponding uniformity indices.

[0138] Module 1404 is used to select the structure corresponding to the microwave antenna with the highest evaluation value as the target structure under the corresponding microwave excitation signal.

[0139] In some embodiments, the microwave antenna includes a diamond sensitive substrate and a metal microwave antenna layer formed on the surface of the diamond sensitive substrate; the metal microwave antenna layer is used to form a microwave power density distribution on the surface of the diamond sensitive substrate; the metal microwave antenna layer includes a central circular opening, a vertical slit communicating with the central circular opening, and a bottom oblique extension region located at the lower end of the vertical slit; the central circular opening, the vertical slit, and the bottom oblique extension region together constitute an Ω-shaped opening region, so that the metal microwave antenna layer forms a microwave current path distributed around the central opening on the surface of the diamond sensitive substrate; the microwave current path is used to form a magnetic field strength distribution on the surface of the diamond sensitive substrate; different microwave antennas form different structures by taking different values ​​for the radius of the central circular opening, the width of the vertical slit, and the half-width of the bottom oblique extension region.

[0140] In some embodiments, the acquisition module 1402 is further configured to, for each microwave antenna simulation model, acquire the microwave power density collected at at least one preset first sampling point on the simulation model when a microwave excitation signal is input to the simulation model through the feed point on the metal microwave antenna layer corresponding to the simulation model of the microwave antenna; the preset first sampling point is located on the surface of the diamond sensitive substrate; determine the power standard deviation of the microwave power density of the simulation model based on the average microwave power density between different preset first sampling points on the simulation model; and determine the microwave power uniformity of the simulation model based on the ratio between the power standard deviation and the average microwave power density.

[0141] In some embodiments, the acquisition module 1402 is further configured to, for each microwave antenna simulation model, acquire the magnetic field strength collected at at least one preset second sampling point on the simulation model when a microwave excitation signal is input to the simulation model through the feed point on the metal microwave antenna layer corresponding to the simulation model of the microwave antenna; the preset second sampling point is located at a preset distance above the surface of the diamond sensitive substrate; based on the average magnetic field strength between different preset second sampling points on the simulation model, determine the magnetic field standard deviation of the magnetic field strength of the simulation model; and based on the ratio between the magnetic field standard deviation and the average magnetic field strength, determine the magnetic field uniformity of the simulation model.

[0142] In some embodiments, the feed point is located at the middle of the lower edge of the diamond sensitive substrate and corresponds to the bottom bevel extension region. This allows the microwave excitation signal to be transmitted through the bottom bevel extension region, the metal regions on both sides of the vertical slit, and the metal region around the central circular opening, forming a near-field microwave excitation on the surface of the diamond sensitive substrate to drive the spin transition of color center electrons.

[0143] In some embodiments, module 1404 is further configured to obtain the maximum microwave power density in different simulation models; and to determine the evaluation value of the microwave antenna corresponding to the simulation model under microwave excitation signal based on the ratio between the maximum microwave power density in the simulation model and the maximum microwave power density in all simulation models and the sum of the weighted sums.

[0144] Each module in the aforementioned microwave antenna structure screening device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the corresponding operations of each module.

[0145] In one exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 15As shown, this computer device includes a processor, memory, input / output (I / O) interfaces, and a communication interface. The processor, memory, and I / O interfaces are connected via a system bus, and the communication interface is also connected to the system bus via the I / O interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and a database. The internal memory provides the environment for the operating system and computer programs stored in the non-volatile storage media. The database stores data. The I / O interfaces are used for exchanging information between the processor and external devices. The communication interface is used for communicating with external terminals via a network. When executed by the processor, the computer program implements a microwave antenna structure screening method.

[0146] Those skilled in the art will understand that Figure 15 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0147] In one embodiment, a computer device is also provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps in the above method embodiments.

[0148] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the steps in the above method embodiments.

[0149] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above method embodiments.

[0150] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, data stored, data displayed, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of the relevant data must comply with relevant regulations.

[0151] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0152] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0153] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for screening microwave antenna structures for quantum current-sensitive elements, characterized in that, The method includes: Simulation models of microwave antennas with different structures were obtained; the microwave antennas are quantum current sensitive elements. When the same microwave excitation signal is input to different simulation models, the uniformity index of the corresponding simulation model is obtained; the uniformity index includes microwave power uniformity and magnetic field uniformity. For each simulation model, the evaluation value of the microwave antenna corresponding to the simulation model under the microwave excitation signal is determined based on the weighted sum between the index weights of the microwave power uniformity and the magnetic field uniformity and their corresponding uniformity indices. The structure corresponding to the microwave antenna with the highest evaluation value is selected as the target structure under the corresponding microwave excitation signal. The microwave antenna includes a diamond-sensitive substrate and a metal microwave antenna layer formed on the surface of the diamond-sensitive substrate. The metal microwave antenna layer is used to form a microwave power density distribution on the surface of the diamond-sensitive substrate. The metal microwave antenna layer includes a central circular opening, a vertical slit communicating with the central circular opening, and a bottom oblique extension region located at the lower end of the vertical slit. The central circular opening, the vertical slit, and the bottom oblique extension region together form an Ω-shaped opening region, enabling the metal microwave antenna layer to form a microwave current path distributed around the central opening on the surface of the diamond-sensitive substrate. The microwave current path is used to form a magnetic field strength distribution on the surface of the diamond-sensitive substrate. Different microwave antennas have different structures by taking different values ​​for the radius of the central circular opening, the width of the vertical slit, and the half-width of the bottom oblique extension region. The method for obtaining the microwave power uniformity of different simulation models when the same microwave excitation signal is input to different simulation models includes: for each microwave antenna simulation model, when the microwave excitation signal is input to the simulation model through the feed point on the corresponding metal microwave antenna layer of the microwave antenna simulation model, obtaining the microwave power density collected at at least one preset first sampling point on the simulation model; the preset first sampling point is located on the surface of the diamond sensitive substrate; determining the power standard deviation of the microwave power density of the simulation model based on the average microwave power density between different preset first sampling points on the simulation model; and determining the microwave power uniformity of the simulation model based on the ratio between the power standard deviation and the average microwave power density. The method for obtaining the magnetic field uniformity of different simulation models when the same microwave excitation signal is input to different simulation models includes: for each microwave antenna simulation model, when the microwave excitation signal is input to the simulation model through the feed point on the corresponding metal microwave antenna layer of the microwave antenna simulation model, obtaining the magnetic field strength collected at at least one preset second sampling point on the simulation model; the preset second sampling point is located at a preset distance above the surface of the diamond sensitive substrate; determining the magnetic field standard deviation of the magnetic field strength of the simulation model based on the average magnetic field strength between different preset second sampling points on the simulation model; and determining the magnetic field uniformity of the simulation model based on the ratio between the magnetic field standard deviation and the average magnetic field strength.

2. The method according to claim 1, characterized in that, The feed point is located at the middle of the lower edge of the diamond sensitive substrate and corresponds to the bottom bevel extension area. It is used to transmit the microwave excitation signal through the bottom bevel extension area, the metal areas on both sides of the vertical slit and the metal area around the central circular opening, so as to form a near-field microwave excitation on the surface of the diamond sensitive substrate to drive the spin transition of color center electrons.

3. The method according to claim 1, characterized in that, The evaluation value of the microwave antenna corresponding to the simulation model under the microwave excitation signal is determined by a weighted sum of the weights of the microwave power uniformity, the magnetic field uniformity, and their corresponding uniformity indices, including: Obtain the microwave power density with the highest numerical value in different simulation models; The evaluation value of the microwave antenna corresponding to the simulation model under the microwave excitation signal is determined based on the ratio between the maximum microwave power density in the simulation model and the maximum microwave power density in all simulation models, and the sum of the weighted sums.

4. A microwave antenna structure screening device for quantum current sensitive elements, characterized in that, The apparatus is used to perform the method as described in any one of claims 1 to 3, the apparatus comprising: The simulation module is used to obtain simulation models of microwave antennas with different structures; the microwave antenna is a quantum current sensitive element. The acquisition module is used to acquire the uniformity index of the corresponding simulation model when the same microwave excitation signal is input to different simulation models; the uniformity index includes microwave power uniformity and magnetic field uniformity. The evaluation module is used to determine the evaluation value of the microwave antenna corresponding to the simulation model under the microwave excitation signal for each simulation model, based on the weighted sum between the index weights of the microwave power uniformity and the magnetic field uniformity and their corresponding uniformity indices. The selection module is used to select the structure corresponding to the microwave antenna with the highest evaluation value as the target structure under the corresponding microwave excitation signal.

5. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 3.

6. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 3.

7. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 3.

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