Method, device and apparatus for angle adjustment of ion beam, and ion implanter

Abstract

The application relates to the technical field of ion implanters, in particular to an ion beam angle adjusting method, an ion beam angle adjusting device, an ion beam angle adjusting equipment and an ion implanter. The ion beam angle adjusting method comprises the following steps: determining an injection angle difference of an ion beam in a drift mode and an acceleration mode, wherein the drift mode is a motion state of the ion beam in a case where an acceleration cylinder is turned off, and the acceleration mode is a motion state of the ion beam in a case where the acceleration cylinder is turned on; adjusting a deflection voltage of a guide electrode based on the injection angle difference, so that a first injection angle of the ion beam in the drift mode is close to a second injection angle of the ion beam in the acceleration mode, until the injection angle difference in the drift mode and the acceleration mode is less than a measurement precision of an angle measuring device.

Description

Technical Field

[0001] This application relates to the field of ion implantation technology, and in particular to a method, apparatus, equipment and ion implanter for adjusting the angle of an ion beam. Background Technology

[0002] Ion implanters are core equipment used in the integrated circuit manufacturing process. An ion implanter includes guiding electrodes for adjusting the angle of the emitted ion beam and an accelerating cylinder for accelerating the ion beam to increase its energy. After acceleration by the ion implanter, the ion beam can be emitted at a preset implantation angle, which can be precisely controlled by adjusting the parameters of the ion implanter.

[0003] The injection angle of the ion beam can be controlled by measuring the current injection angle of the ion beam using an angle measuring device, and then by... Figure 1 The parameters of the guiding electrode and parallel lens in the front-end optical path are adjusted so that the ion beam is injected into the wafer at a preset injection angle.

[0004] However, due to assembly errors and tolerances of the angle measuring device, the zero point (center) of the angle measuring device is difficult to coincide with the center of the beam optical path, resulting in errors in the injection angle measured by the angle measuring device. This is not the true injection angle of the ion beam. Adjusting based on the incorrect injection angle will cause the injection angle of the ion beam to deviate from the actual requirements, resulting in the ion beam quality not meeting the standards.

[0005] In CN101490791A, the ion beam can be guided to the scanning vertex of the scanning element of the ion implantation system by means of a guiding element, so as to allow the beam to be emitted from the parallelization element at a desired angle.

[0006] However, each operating condition requires individual adjustments, which are frequent, result in long debugging times, and reduce the working efficiency of the compression equipment. Summary of the Invention

[0007] To overcome the problems existing in the related technologies, this application provides an ion beam angle adjustment method, apparatus, equipment and ion implanter that can solve the above problems.

[0008] According to a first aspect of the embodiments of this application, an ion beam angle adjustment method is provided. The method is applied to an ion implanter, the ion implanter including a guiding electrode for adjusting the angle of the emitted ion beam and an accelerating cylinder for accelerating the ion beam. The method includes: determining the injection angle difference of the ion beam in a drift mode and an acceleration mode, wherein the drift mode is the motion state of the ion beam when the accelerating cylinder is off, and the acceleration mode is the motion state of the ion beam when the accelerating cylinder is on; adjusting the deflection voltage of the guiding electrode based on the injection angle difference, so that a first injection angle of the ion beam in the drift mode is close to a second injection angle in the acceleration mode, until the injection angle difference between the drift mode and the acceleration mode is less than the measurement accuracy of the angle measuring device.

[0009] According to a second aspect of the embodiments of this application, an ion beam angle adjustment device is provided. The device is disposed in an ion implanter, the ion implanter including a guiding electrode for adjusting the angle of the emitted ion beam and an accelerating cylinder for accelerating the ion beam. The device includes: a processing unit configured to determine the injection angle difference of the ion beam in a drift mode and an acceleration mode, wherein the drift mode is the motion state of the ion beam when the accelerating cylinder is off, and the acceleration mode is the motion state of the ion beam when the accelerating cylinder is on; and an adjustment unit configured to adjust the deflection voltage of the guiding electrode based on the injection angle difference, so that a first injection angle of the ion beam in the drift mode is close to a second injection angle in the acceleration mode, until the injection angle difference between the drift mode and the acceleration mode is less than the measurement accuracy of the angle measuring device.

[0010] According to a third aspect of the present application, an ion implanter is provided, including a guiding electrode for adjusting the angle of the emitted ion beam, and an accelerating cylinder for accelerating the ion beam, wherein the deflection voltage of the guiding electrode is adjusted by the ion beam angle adjustment method as described in the first aspect.

[0011] According to a fourth aspect of the embodiments of this application, an electronic device is provided, comprising: a processor and a memory; the memory being used to store a computer program; and the processor being used to execute the ion beam angle adjustment method as described in the first aspect by invoking the computer program.

[0012] According to a fifth aspect of the embodiments of this application, a computer program product is provided, including a computer program that, when executed by a processor, implements the method as described in the first aspect.

[0013] The technical solutions provided by the embodiments of this application may include the following beneficial effects: This application can determine the injection angle difference of the ion beam in drift mode and acceleration mode, and adjust the deflection voltage of the guiding electrode according to the injection angle difference. In each round of adjustment, the first injection angle of the current round is adjusted to be close to the second injection angle of the previous round, and then the second injection angle of the current round is determined to determine the injection angle difference of the current round, until the injection angle difference is less than the measurement accuracy.

[0014] Based on the method of this application, the first injection angle in drift mode and the second injection angle in acceleration mode can be rapidly converged through a limited number of adjustments, thereby quickly and conveniently determining the deflection voltage of the guiding electrode corresponding to the ion beam emission along the center. This simplifies the adjustment process of the injection angle, reduces debugging time, and improves the working efficiency of the equipment. Furthermore, since the injection angle of the ion beam is adjusted to the center of the beam path, it is not necessary to adjust it separately for each working condition. One adjustment can be applied to multiple working conditions, improving the efficiency of multi-working condition operations.

[0015] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0016] The accompanying drawings, which are incorporated in and form part of this application, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0017] Figure 1 This is a schematic diagram of the back-end optical path of an ion implanter according to an exemplary embodiment of this application.

[0018] Figure 2 This is a schematic flowchart illustrating an ion beam angle adjustment method according to an exemplary embodiment of this application.

[0019] Figure 3 This is a schematic diagram of the trajectory of an ion beam according to an exemplary embodiment of this application.

[0020] Figure 4 This is a block diagram illustrating an ion beam angle adjustment device according to an exemplary embodiment of this application.

[0021] Figure 5 This is a schematic diagram of the structure of a computer device according to an exemplary embodiment of this application. Detailed Implementation

[0022] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0023] The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The singular forms “a,” “the,” and “the” used in this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0024] It should be understood that although the terms first, second, third, etc., may be used in this application to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of this application, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to determination."

[0025] Ion implanters are one of the core pieces of equipment used in the integrated circuit manufacturing process, enabling doping processes. Doping is a crucial step in the fabrication of integrated circuit components. The ion source in an ion implanter ionizes a specific chemical gas into plasma, extracts an ion beam from the plasma, and then uses a quality analysis device to select specific types of ions. Subsequent focusing, scanning, parallelizing, and accelerating modules implant this ion beam into silicon or silicon carbide semiconductor materials, achieving doping.

[0026] Figure 1 This is a schematic diagram of the back-end optical path of an ion implanter according to an embodiment of this application.

[0027] In an electrostatic scanning ion implanter, the ion beam is generated by an ion source, extracted by extraction electrodes, and then enters a quality analysis unit for quality screening. After screening, it enters the back-end optical path. For example... Figure 1 As shown, the back-end optical path mainly includes a guiding electrode, a scanning electrode, an electrostatic parallel lens, and an accelerating tube. After the ion beam passes through the accelerating tube, the beamline angle can be measured by the assembled angle measuring device.

[0028] As an angle adjustment component for the ion beam, the guide electrode can adjust the deflection voltage applied to it, thereby adjusting the angle of the ion beam.

[0029] By connecting a high-frequency triangular wave to the scanning electrode, a point-like ion beam can be scanned into a divergent band-like beam.

[0030] An electrostatic parallel lens collimates the diverging ribbon beam into a parallel ribbon beam, which then enters the accelerator tube.

[0031] The accelerator tube consists of multiple equally spaced electrode plates, which are connected by voltage divider resistors with the same resistance. An accelerating voltage is applied to both ends of the accelerator tube to accelerate the ion beam to the target energy.

[0032] At the end of the back-end optical path, an angle measuring device can usually be set up to measure the injection angle of the received ion beam.

[0033] The implantation angle of an ion implanter needs to be precisely controlled. Angle control is achieved by measuring the beam angle using an angle measuring device and adjusting it using the guide electrode and parallel lens in the front-end optical path.

[0034] When performing beamline angle correction, the relevant technology can observe the measurement results of the angle measuring device and then continuously adjust the parameters of the beamline angle adjustment components (such as the guide electrode and parallel lens in the front optical path and the guide electrode in the rear optical path) so that the measurement result of the angle measuring device is 0, which indicates that the ion beam is emitted along the beamline center of the optical path.

[0035] However, due to the large number of components in the system, assembly errors may exist within the internal parts of the angle measuring device, and assembly errors may also occur when the angle measuring device is assembled onto the ion implantation machine. This makes it difficult to ensure that the zero point of the angle measuring device coincides with the beamline center of the optical path through mechanical assembly. A measurement result of 0 from the angle measuring device does not necessarily mean that the ion beam is actually emitted along the beamline center. This makes the related technologies insufficiently precise in adjusting the ion beam angle, and the adjusted angle is only applicable to the current operating condition. Once switching to different operating conditions and using different parameters (such as adjusting the accelerating voltage), the ion beam angle needs to be readjusted, resulting in long process debugging times and low equipment operating efficiency.

[0036] To address the aforementioned technical problems, this application proposes a method for adjusting the angle of an ion beam.

[0037] Figure 2 This is a schematic flowchart illustrating an ion beam angle adjustment method according to an embodiment of this application. The ion beam angle adjustment method can be applied to methods including... Figure 1The ion implanter shown is a rear-end optical path. This ion beam angle adjustment method can be used to eliminate assembly errors and tolerances of the angle measuring device, thereby enabling rapid adjustment of the ion beam to be emitted along the center of the optical path, with shorter adjustment time and adaptability to more working conditions.

[0038] In some embodiments, the ion implanter includes a guiding electrode for adjusting the angle of the emitted ion beam and an accelerating cylinder for accelerating the ion beam.

[0039] The back-end optical path of the ion implanter can be like Figure 1 As shown, the functions of each component have been explained in the above embodiments, and will not be repeated here.

[0040] like Figure 2 As shown, the methods for adjusting the angle of the ion beam include: In step S201, the injection angle difference of the ion beam in drift mode and acceleration mode is determined, wherein the drift mode is the motion state of the ion beam when the acceleration tube is turned off, and the acceleration mode is the motion state of the ion beam when the acceleration tube is turned on. In step S202, the deflection voltage of the guiding electrode is adjusted based on the injection angle difference, so that the first injection angle of the ion beam in drift mode is close to the second injection angle in acceleration mode, until the injection angle difference between drift mode and acceleration mode is less than the measurement accuracy of the angle measuring device.

[0041] In some embodiments, the drift mode is the motion state of the ion beam when the accelerator tube is turned off, and the acceleration mode is the motion state of the ion beam when the accelerator tube is turned on.

[0042] Figure 3 This is a schematic diagram illustrating the trajectory of an ion beam according to an embodiment of this application.

[0043] When the accelerating power supply is turned off and no accelerating voltage is applied to the accelerating cylinder (i.e., the accelerating cylinder is closed), the ion beam will not be deflected by the accelerating voltage in the accelerating electric field and will continue to move in its original direction. This motion state of the ion beam can be called drift mode. Figure 3 In the accelerator tube, the dashed trajectory of the ion beam represents the trajectory of the ion beam in drift mode.

[0044] When the accelerating power supply is turned on, an accelerating voltage is applied to the accelerating cylinder. This accelerating voltage increases the energy of the ion beam, allowing the emitted ion beam to reach the target energy. Figure 3 In the accelerator tube, the solid line trajectory of the ion beam represents the trajectory of the ion beam under this acceleration mode.

[0045] like Figure 3As shown, combining the trajectory of the ion beam in drift mode and acceleration mode, since the isopotential line of the accelerating electric field of the accelerating voltage is perpendicular to the center of the beam, if the ion beam is not emitted along the direction of the beam center, the strength of the accelerating electric field will cause the ion beam to deflect at different angles.

[0046] In some embodiments, the injection angle difference of the ion beam in drift mode and acceleration mode is determined.

[0047] The first injection angle of the ion beam in drift mode and the second injection angle in acceleration mode can be determined separately, and the injection angle difference can be determined based on the first injection angle and the second injection angle.

[0048] In drift mode, the accelerator is turned off, and the ion beam is shot through the accelerator with its original energy to the angle measuring device, which can measure the first injection angle. In acceleration mode, the accelerator accelerates the ion beam to a high speed, so that the ion beam is shot out with higher energy, and the angle measuring device can measure the second injection angle.

[0049] like Figure 3 As shown, since the equipotential lines of the accelerating electric field of the accelerating tube are perpendicular to the center of the beam, when the ion beam is not emitted along the center of the beam, there will be an injection angle difference between the first and second injection angles of the ion beam based on the accelerating electric field; however, if the ion beam is emitted along the direction of the center of the beam, the accelerating electric field will not cause a deviation in the emission angle of the ion beam, that is, there is no injection angle difference.

[0050] Therefore, the injection angle difference can be used to characterize whether the emission direction of the ion beam coincides with the direction of the beamline center.

[0051] In some embodiments, the deflection voltage of the guiding electrode is adjusted based on the injection angle difference, so that the first injection angle of the ion beam in drift mode is close to the second injection angle in acceleration mode, until the injection angle difference between drift mode and acceleration mode is less than the measurement accuracy.

[0052] Because the angle measuring device has a certain measurement accuracy, and the error introduced by this accuracy is within the acceptable range for the ion implanter, adjustments are made based on this measurement accuracy.

[0053] The injection angle difference can be compared with the measurement accuracy. If the injection angle difference is not greater than the measurement accuracy, it indicates that the accelerating electric field has not caused the ion beam to deflect significantly. Since the direction of the accelerating electric field is perpendicular to the beam center, it can be assumed that the ion beam is emitted along the beam center, and there is no need to adjust the deflection voltage to adjust the ion beam to the beam center.

[0054] If the injection angle difference is greater than the measurement accuracy, it indicates that the accelerating electric field has caused a large angle deflection of the ion beam. It can be assumed that there is a large angle between the emission angle of the ion beam and the center of the beam. Therefore, when passing through the accelerating electric field, the injection angle of the ion beam will be deflected due to the action of the accelerating electric field. Thus, the injection angle of the ion beam needs to be adjusted.

[0055] When adjusting the injection angle of the ion beam, the zero point of the angle measuring device may not coincide with the center of the beam due to possible assembly errors. Therefore, adjusting the deflection voltage does not mean adjusting the first injection angle to 0, but rather that the first injection angle and the second injection angle of the ion beam are equal or the difference between them is less than the measurement accuracy of the angle measuring device under the adjusted deflection voltage.

[0056] For example, if the first injection angle is 0.33°, since the zero point of the angle measuring device may not coincide with the center of the beamline, even if the first injection angle is adjusted to 0°, the ion beam may not necessarily be emitted along the center of the beamline.

[0057] Therefore, this application does not determine whether the ion beam is emitted along the beamline center based on whether the injection angle is 0, but rather based on whether the ion beam deflects in acceleration mode compared to drift mode. The adjustment amount of the deflection voltage that needs to be adjusted can be determined based on the injection angle difference. The adjustment goal is to gradually bring the first injection angle of the ion beam in drift mode closer to the second injection angle in acceleration mode, until the injection angle difference is less than the measurement accuracy. The larger the injection angle difference, the larger the adjustment amount.

[0058] It should be noted that the adjustment can be made by making the difference between the adjusted first injection angle and the adjusted second injection angle less than the measurement accuracy in one adjustment; or it can be made by making multiple adjustments to gradually approximate the difference. After each adjustment, the difference in injection angle after the adjustment is determined, and then the difference in injection angle is compared with the measurement accuracy to determine whether the next adjustment is needed.

[0059] The method of this application can determine the injection angle difference of the ion beam in drift mode and acceleration mode, and then adjust the deflection voltage according to the injection angle difference. After each round of deflection voltage adjustment, the first injection angle of the current round is made close to the second injection angle corresponding to the deflection voltage of the previous round, and then the second injection angle of the current round is determined, thereby determining the injection angle difference of the current round, until the injection angle difference is less than the measurement accuracy.

[0060] Based on this method, this application can quickly determine the deflection voltage that causes the ion beam to be emitted along the beam center through a limited number of adjustments, simplifying the adjustment process. Furthermore, since the injection angle of the ion beam is adjusted to the center of the beam path, the angle of the emitted ion beam will not shift even when the accelerating voltage is changed in other operating conditions, eliminating the need for individual adjustments for each operating condition, saving adjustment time, and improving operational efficiency.

[0061] In some embodiments, determining the injection angle difference between the ion beam in drift mode and acceleration mode includes: measuring a first injection angle of the ion beam in drift mode and a second injection angle in acceleration mode using an assembled angle measuring device; and determining the injection angle difference based on the first injection angle and the second injection angle.

[0062] Based on the assembly angle measuring device, the first injection angle θ1 in drift mode can be determined, the second injection angle θ2 in acceleration mode can be determined, and the injection angle difference can be determined based on the difference between the first injection angle θ1 and the second injection angle θ2.

[0063] It should be noted that the first injection angle is affected by the deflection voltage of the guiding electrode, and the second injection angle is the injection angle after the ion beam is accelerated by the accelerator tube. Therefore, it is affected by the angle between the first injection angle and the beam center, the accelerating voltage, the length of the accelerator tube, etc. In the method of this application, different accelerating voltages correspond to different operating conditions, and the first and second injection angles are mainly changed by adjusting the deflection voltage.

[0064] In some embodiments, adjusting the deflection voltage of the guide electrode based on the injection angle difference includes: adjusting the deflection voltage of the guide electrode based on the injection angle difference of the current round, and determining the injection angle difference of the next round based on the adjusted deflection voltage; if the injection angle difference of the next round is less than the measurement accuracy of the angle measuring device, completing the adjustment of the deflection voltage; if the injection angle difference of the next round is greater than or equal to the measurement accuracy of the angle measuring device, adjusting the deflection voltage of the guide electrode based on the injection angle difference of the next round.

[0065] When the deflection voltage is adjusted, both the first and second implantation angles of the ion beam will change. Therefore, if the adjusted first implantation angle is equal to the original second implantation angle, the corresponding adjusted second implantation angle may also be deflected based on the original second implantation angle, resulting in a large deviation between the first and second implantation angles under the adjusted deflection voltage.

[0066] Therefore, the deflection voltage can be adjusted through multiple iterations so that the ion beam gradually converges from the first injection angle to the second injection angle based on the adjusted deflection voltage, until the injection angle difference determined based on the adjusted deflection voltage is also less than the measurement accuracy of the angle measuring device.

[0067] In some embodiments, the energy of the ion beam, after being accelerated by the accelerator, reaches n times the energy before the ion beam enters the accelerator, where n is greater than or equal to 1.5 and less than or equal to 3.

[0068] For example, if the total energy of the ion beam is the first energy E, and the energy that the accelerating voltage can increase is the accelerating energy E, then the ion beam enters the accelerating tube with the first energy E, and after being accelerated by the accelerating tube, it can reach the target energy 2E.

[0069] When using an ion implanter, there is a certain requirement for the total energy of the emitted ion beam. This total energy can be changed by altering the accelerating voltage.

[0070] It should be noted that the higher the accelerating voltage used in the accelerated mode, the closer the second injection angle is to the beamline center. Under the method of this application, the convergence of the first and second injection angles is faster, enabling more rapid adjustment of the deflection voltage and allowing the ion beam to exit along the beamline center. However, the accelerating voltage is achieved through an accelerating power supply, which has a range limitation. Therefore, considering energy consumption, cost, and hardware factors, the accelerating energy can be set equal to the first energy, so that the total energy after acceleration (target energy) is twice the initial energy of the ion beam.

[0071] In some embodiments, adjusting the deflection voltage of the guiding electrode based on the injection angle difference includes: determining a first injection angle of the ion beam in drift mode; and adjusting the deflection voltage until the first injection angle is equal to a second injection angle in acceleration mode.

[0072] When the injection angle can be continuously measured, the deflection voltage can be adjusted in ion beam drift mode. By observing the change in the first injection angle, the deflection voltage can be continuously adjusted until the first injection angle is equal to the second injection angle (or the injection angle difference is less than the measurement accuracy).

[0073] Furthermore, during the adjustment of the deflection voltage, the drift mode and acceleration mode can be switched, and the deflection voltage can be continuously adjusted until the determined first injection angle is equal to the second injection angle (or the injection angle difference is less than the measurement accuracy).

[0074] In some embodiments, adjusting the deflection voltage of the guiding electrode based on the injection angle difference includes: determining the correspondence between the injection angle difference of the ion beam in drift mode and acceleration mode and the adjustment voltage of the guiding electrode; determining the adjustment voltage of the guiding electrode based on the correspondence and the injection angle difference; and adjusting the deflection voltage of the guiding electrode based on the adjustment voltage.

[0075] The deflection voltage of the guiding electrode has a linear relationship with the first injection angle. The relationship between the injection angle difference and the adjustment amount of the deflection voltage (adjustment voltage) can be determined, and then the required adjustment voltage can be determined. Based on this adjustment voltage, adjustments are made to the deflection voltage so that the first injection angle of the ion beam shifts from its original position by the magnitude of the injection angle difference.

[0076] For example, the injection angle difference can be determined as the difference between the first injection angle θ1 and the second injection angle θ2. The sensitivity of the injection angle difference to the change of deflection voltage is m. Then the adjustment voltage is the product of the sensitivity and the injection angle difference, m × (θ2 - θ1).

[0077] The correspondence in this embodiment can be based on the derivation of mathematical formulas, or on the summary and induction of measured experimental data, or even determined by a large model based on the learning of historical data. This application does not impose any restrictions on this.

[0078] In some embodiments, adjusting the deflection voltage of the guiding electrode based on the adjustment voltage includes: turning off the acceleration cylinder, adjusting the deflection voltage according to the adjustment voltage, and determining the adjusted first injection angle.

[0079] The deflection voltage can be adjusted in drift mode, and the adjusted first injection angle can be determined by the angle measuring device after adjustment. This facilitates the subsequent determination of the second injection angle and the injection angle difference, and determines whether the deflection voltage needs to be adjusted again.

[0080] In some embodiments, the method for determining the correspondence includes: experimentally determining multiple first injection angles corresponding to multiple deflection voltages when the ion beam is in drift mode; and determining the correspondence based on the multiple deflection voltages and the corresponding multiple first injection angles.

[0081] Multiple first injection angles corresponding to multiple deflection voltages of the ion beam in drift mode can be experimentally determined, and the correspondence between the injection angle difference and the change in deflection voltage (adjustment voltage) can be determined based on the experimentally measured data.

[0082] The method of summarizing and generalizing based on experimental data is more convenient, faster, simpler, and more effective than mathematical theoretical derivation.

[0083] For example, the deflection voltage U can be set to 0, dU, 2dU, 3dU, 4dU, and 5dU respectively, and the corresponding first injection angle θ can be measured using an angle measuring device. The corresponding relationship can then be determined based on the experimentally measured data.

[0084] In some embodiments, determining the correspondence based on the plurality of deflection voltages and the corresponding plurality of first injection angles includes: performing linear fitting on the plurality of deflection voltages and the corresponding plurality of first injection angles; and determining the slope of the linearly fitted line as the correspondence.

[0085] Multiple deflection voltages measured in the experiment can be linearly fitted with multiple corresponding first injection angles.

[0086] For example, an image can be plotted with the first injection angle θ as the x-axis and U as the y-axis, and then a linear line fitting can be performed.

[0087] After linear fitting, the relationship between the injection angle difference (injection angle before adjustment - injection angle after adjustment) and the adjustment voltage (deflection voltage before adjustment - deflection voltage after adjustment) is the slope of the linearly fitted line. This relationship can be the sensitivity m.

[0088] After determining the injection angle difference, the corresponding adjustment voltage can be determined based on this correspondence, and then the deflection voltage can be adjusted according to the adjustment voltage. The aforementioned adjustment process is repeated until the injection angle difference between the first injection angle and the second injection angle is less than the measurement accuracy, indicating that the ion beam is emitted along the beamline center direction.

[0089] In some embodiments, when the injection angle difference is less than the measurement accuracy, the second injection angle can be determined as the zero-point offset angle of the angle measuring device.

[0090] When the difference between the first injection angle and the second injection angle is less than the measurement accuracy, the second injection angle may not be zero, indicating that the zero point of the angle measuring device is not the center of the beam due to assembly errors or other reasons. Since the angle measuring device does not need to be disassembled frequently, the relevant components are usually disassembled only after the equipment is installed in the factory or during quarterly maintenance, which will cause the zero point offset of the assembled angle measuring device to change again.

[0091] Therefore, after adjustments to make the injection angle difference less than the measurement accuracy, the emission direction of the second injection angle can be considered as the direction of the beam center. Then, the angle between the zero point of the angle measuring device and the beam center is the second injection angle, and the second injection angle can be determined as the zero point offset angle of the angle measuring device.

[0092] In some embodiments, the measuring angle of the angle measuring device can be determined, and then the actual angle can be determined based on the zero-point offset angle and the measuring angle.

[0093] If the angle measuring device remains unchanged (e.g., without disassembly or reassembly), the actual angle can be determined based on the zero-point offset angle and the measured angle. The actual angle is the measured angle minus the zero-point offset angle.

[0094] Based on this embodiment, after the zero-point calibration of the angle measuring device is completed, the angle measuring device can determine the actual angle relatively accurately.

[0095] In some embodiments, the method further includes: adjusting the deflection voltage according to the offset angle between the ion beam and the beam center; wherein the offset angle is the difference between the measurement angle of the assembled angle measuring device and the zero-point offset angle; and the zero-point offset angle is the second injection angle when the injection angle difference is less than the measurement accuracy.

[0096] The measurement angle determined by the angle measuring device in drift mode of the ion beam can be determined. The difference between this measurement angle and the zero-point drift angle is the actual angle of the ion beam, which is also the offset angle between the ion beam and the beam center in drift mode.

[0097] After determining the offset angle, the deflection voltage can be adjusted accordingly. For example, it can be adjusted based on the correspondence between the offset angle and the deflection voltage, or it can be adjusted based on the aforementioned sensitivity m to eliminate the offset angle, causing the ion beam to exit along the beamline center direction, thus bringing the offset angle to zero.

[0098] Based on this embodiment, without disassembling and reassembling the angle measuring device, the determined zero-point offset angle can more conveniently and quickly determine the actual offset angle of the ion beam, thereby rapidly adjusting the deflection voltage. When the acceleration voltage of the accelerating cylinder changes, leading to a change in operating conditions, this embodiment eliminates the need to re-perform convergence from the beginning; instead, it allows for direct adjustment based on the zero-point offset angle, which is convenient, fast, and improves adjustment efficiency.

[0099] The following is a specific example to illustrate the solution of this application.

[0100] The existing technology corrects the angle measured by the angle measuring device to 0 degrees using a beamline angle adjustment device (the deflection voltage of the guiding electrode). This requires repeated adjustments and is only applicable to a single operating condition. With a total energy of 60 keV, after repeated adjustments, the beamline angle measuring device eventually measured an angle of 0 degrees at a deflection voltage of -1.02 kV. However, after switching process conditions, by adjusting the accelerating voltage and increasing the total energy to 200 keV, the angle measured by the angle measuring device at 0.23°, deviating from the original requirement of 0°, necessitates readjusting the deflection voltage again. Therefore, because the zero point of the angle measuring device is not aligned with the beamline center, this technology requires readjusting the deflection voltage parameters every time the operating condition changes, resulting in a lengthy process switchover.

[0101] The adjustment process using the method described in this application is as follows: The angle measuring device has a measurement accuracy of 0.05°, and the sensitivity of the change in beam angle to the change in guide electrode deflection voltage is m=3.08kV / °.

[0102] The total energy of the B+ (boron ion) beam was set to 60 keV, the extraction voltage was set to 60 kV, the acceleration power supply was turned off, the ion beam was in drift mode, the deflection voltage of the guiding electrode was 0, and the first injection angle was measured to be 0.33°. The total energy of the B+ ion beam was set to 120 keV, with the extraction voltage set to 60 kV. The accelerating power supply was turned on, and the accelerating voltage was 60 kV. The ion beam was in acceleration mode, and the deflection voltage of the guiding electrode was still 0. The second injection angle was measured to be 0.16°, and the injection angle difference was 0.17°, which is greater than the measurement accuracy. The adjustment voltage is determined based on the injection angle difference, and then the deflection voltage is determined based on the adjustment voltage. The adjustment voltage is 3.08 * (0.16 - 0.33) = -0.52 kV, the original deflection voltage is 0, and the adjusted deflection voltage is -0.52 kV. The total energy of the B+ ion beam was set to 60 keV, the extraction voltage was set to 60 kV, the acceleration power supply was turned off, the ion beam was in drift mode, the deflection voltage of the guiding electrode was -0.52 kV, and the first injection angle was measured to be 0.14°. The total energy of the B+ ion beam was set to 120 keV, with the extraction voltage set to 60 kV. The accelerating power supply was turned on, and the accelerating voltage was 60 kV. The ion beam was in acceleration mode, and the deflection voltage of the guiding electrode was -0.52 kV. The second injection angle was measured to be 0.07°, and the injection angle difference was 0.14° - 0.07° = 0.07°, which is greater than the measurement accuracy. The adjustment voltage is determined based on the injection angle difference, and then the deflection voltage is determined based on the adjustment voltage. Specifically, the adjustment voltage is 3.08 * (0.07 - 0.14) ≈ -0.22 kV, the initial deflection voltage is -0.52 kV, and the final deflection voltage is -0.74 kV. The total energy of the B+ ion beam was set to 60 keV, the extraction voltage was set to 60 kV, the acceleration power supply was turned off, the ion beam was in drift mode, the deflection voltage of the guiding electrode was -0.74 kV, and the first injection angle was measured to be 0.08°. The total energy of the B+ ion beam was set to 120 keV, with the extraction voltage set to 60 kV. The accelerating power supply was turned on, and the accelerating voltage was set to 60 kV. The ion beam was in acceleration mode, and the deflection voltage of the guiding electrode was -0.74 kV. The second injection angle was measured to be 0.05°, and the injection angle difference was 0.08° - 0.05° = 0.03°, which is less than the measurement accuracy of 0.05°. This indicates that the ion beam has approached the center of the beamline. If it is to get closer, it is limited by the measurement accuracy of the angle measuring device. Therefore, it can be assumed that the ion beam is emitted along the center of the beamline.

[0103] After the adjustment is completed, the second injection angle of 0.05° can be determined as the zero-point offset angle. Then the actual angle measured by the angle measuring device is equal to the measured angle minus 0.05°.

[0104] Based on the above examples, this application completed the adjustment of the ion beam injection angle under the operating condition (accelerating voltage 60kV) through three rounds of iterative cycles.

[0105] In the above example, the measurement process of sensitivity m is as follows: The total energy of the B+ ion beam is set to 60 keV, with the extraction voltage set to 60 kV, and the acceleration power supply is turned off. The deflection voltage U of the guiding electrode was set to (0kV, 0.4kV, 0.8kV, 1.2kV, 1.6kV, 2kV), and the corresponding first injection angle θ was measured to be (0.33°, 0.46°, 0.6°, 0.72°, 0.85°, 0.98°). The result was obtained by linear fitting using the least squares method: U = 3.08θ - 1.02, and the slope was the sensitivity m = 3.08kV / degree.

[0106] Based on the above examples, after calibrating the beam center using the method of this application, there is no need to readjust the guiding electrode under other operating conditions. For example, under a certain operating condition, the total energy is 60 keV. By correcting the angle to 0° using the method of this application, the deflection voltage of the guiding electrode is -0.83 kV, and the beam angle measuring device measures an angle of 0. In this case, after changing the operating condition (e.g., adjusting the accelerating voltage to 140 kV), the total ion beam energy needs to be adjusted to 200 keV. At this time, no adjustment is made, and the measured angle is 0.02°. The difference from the required 0° angle is less than the angle measurement accuracy, so there is no need to readjust the deflection voltage.

[0107] Based on the zero-point offset angle (0.05°) determined in the above embodiments, without disassembling the angle measuring device, when the same ion implanter needs readjustment due to changes in deflection voltage, the actual angle can be determined by the zero-point offset angle and the measured angle, and then a rapid adjustment can be made based on the actual angle. For example, if the deflection voltage of the ion implanter becomes -2kV, it is not necessary to repeat the three-round iterative cycle similar to the above example. After determining the first implantation angle in the drift mode as θ, the actual angle can be determined as θ-0.05°, and the adjustment voltage can be determined as 3.08*(θ-0.05°). Thus, the adjusted deflection voltage U=-2+3.08*(θ-0.05°) can be determined, thereby adjusting the ion beam to the beam center with only one round of adjustment.

[0108] Corresponding to the embodiments of the ion beam angle adjustment method of this application, this application also provides embodiments of a corresponding ion beam angle adjustment device.

[0109] Please see Figure 4 , Figure 4 This is a block diagram of an ion beam angle adjustment device according to one embodiment of this application. The ion beam angle adjustment device is disposed in an ion implanter, which includes a guiding electrode for adjusting the angle of the emitted ion beam and an accelerating cylinder for accelerating the ion beam, such as... Figure 4 As shown, the ion beam angle adjustment device includes: Processing unit 410 is configured to determine the injection angle difference of the ion beam in drift mode and acceleration mode, wherein the drift mode is the motion state of the ion beam when the acceleration tube is turned off, and the acceleration mode is the motion state of the ion beam when the acceleration tube is turned on. The adjustment unit 420 is configured to adjust the deflection voltage of the guiding electrode based on the injection angle difference, so that the first injection angle of the ion beam in drift mode is close to the second injection angle in acceleration mode, until the injection angle difference between drift mode and acceleration mode is less than the measurement accuracy of the angle measuring device.

[0110] In some embodiments, determining the injection angle difference between the ion beam in drift mode and acceleration mode includes: measuring a first injection angle of the ion beam in drift mode and a second injection angle in acceleration mode using an assembled angle measuring device; and determining the injection angle difference based on the first injection angle and the second injection angle.

[0111] In some embodiments, adjusting the deflection voltage of the guide electrode based on the injection angle difference includes: adjusting the deflection voltage of the guide electrode based on the injection angle difference of the current round, and determining the injection angle difference of the next round based on the adjusted deflection voltage; if the injection angle difference of the next round is less than the measurement accuracy of the angle measuring device, completing the adjustment of the deflection voltage; if the injection angle difference of the next round is greater than or equal to the measurement accuracy of the angle measuring device, adjusting the deflection voltage of the guide electrode based on the injection angle difference of the next round.

[0112] In some embodiments, in the acceleration mode, the energy of the ion beam, after being accelerated by the accelerator, reaches n times the energy before the ion beam enters the accelerator, where n is greater than or equal to 1.5 and less than or equal to 3.

[0113] In some embodiments, adjusting the deflection voltage of the guiding electrode based on the injection angle difference includes: determining the correspondence between the injection angle difference of the ion beam in drift mode and acceleration mode and the adjustment voltage of the guiding electrode; determining the adjustment voltage of the guiding electrode based on the correspondence and the injection angle difference; and adjusting the deflection voltage of the guiding electrode based on the adjustment voltage.

[0114] In some embodiments, the method for determining the correspondence includes: experimentally determining multiple first injection angles corresponding to multiple deflection voltages when the ion beam is in drift mode; and determining the correspondence based on the multiple deflection voltages and the corresponding multiple first injection angles.

[0115] In some embodiments, determining the correspondence based on the plurality of deflection voltages and the corresponding plurality of first injection angles includes: performing linear fitting on the plurality of deflection voltages and the corresponding plurality of first injection angles; and determining the slope of the linearly fitted line as the correspondence.

[0116] In some embodiments, the device is further configured to: adjust the deflection voltage according to the offset angle between the ion beam and the beam center; wherein the offset angle is the difference between the measurement angle of the assembled angle measuring device and the zero-point offset angle; and the zero-point offset angle is the second injection angle when the injection angle difference is less than the measurement accuracy.

[0117] The specific implementation process of the functions and roles of each unit in the above device can be found in the implementation process of the corresponding steps in the above method, and will not be repeated here.

[0118] Embodiments of this application also provide an electronic device, including: a processor and a memory; the memory for storing a computer program; and the processor for executing the ion beam angle adjustment method as described in any of the above embodiments by invoking the computer program.

[0119] Embodiments of this application also propose a computer-readable storage medium having a computer program stored thereon that, when executed by a processor, implements the ion beam angle adjustment method as described in any of the above embodiments.

[0120] Embodiments of this application also provide a computer program product, including a computer program that, when executed by a processor, implements the method as described in any of the above embodiments.

[0121] Please see Figure 5 , Figure 5 This is a schematic diagram of the structure of a computer device provided in an optional embodiment of the present invention, such as... Figure 5 As shown, the computer device includes one or more processors 10, memory 20, and interfaces for connecting the components, including high-speed interfaces and low-speed interfaces. The components communicate with each other via different buses and can be mounted on a common motherboard or otherwise installed as needed. The processors can process instructions executed within the computer device, including instructions stored in or on memory to display graphical information of a GUI on external input / output devices (such as display devices coupled to the interfaces). In some alternative implementations, multiple processors and / or multiple buses can be used with multiple memories and multiple memory modules, if desired. Similarly, multiple computer devices can be connected, each providing some of the necessary operations (e.g., as a server array, a group of blade servers, or a multiprocessor system).

[0122] Processor 10 may be a central processing unit, a network processor, or a combination thereof. Processor 10 may further include a hardware chip. The hardware chip may be an application-specific integrated circuit (ASIC), a programmable logic device (PLD), or a combination thereof. The programmable logic device may be a complex programmable logic device (CAMP), a field-programmable gate array (FPGA), a general-purpose array logic (GDA), or any combination thereof.

[0123] The memory 20 stores instructions executable by at least one processor 10 to cause at least one processor 10 to perform the method shown in the above embodiments.

[0124] The memory 20 may include a program storage area and a data storage area. The program storage area may store the operating system and applications required for at least one function; the data storage area may store data created based on the use of the computer device as shown by a landing page for an app. Furthermore, the memory 20 may include high-speed random access memory and may also include non-transitory memory, such as at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some alternative embodiments, the memory 20 may optionally include memory remotely located relative to the processor 10, which can be connected to the computer device via a network. Examples of such networks include, but are not limited to, the Internet, intranets, local area networks, mobile communication networks, and combinations thereof.

[0125] The memory 20 may include volatile memory, such as random access memory; the memory may also include non-volatile memory, such as flash memory, hard disk or solid-state drive; the memory 20 may also include a combination of the above types of memory.

[0126] The computer device also includes a communication interface 30 for communicating with other devices or communication networks.

[0127] Embodiments of this application also propose an ion implanter, including a guiding electrode for adjusting the angle of the emitted ion beam, an accelerating cylinder for accelerating the ion beam, and an electronic device, wherein the electronic device is used to adjust the deflection voltage of the guiding electrode by the ion beam angle adjustment method of any of the above embodiments.

[0128] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.

[0129] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

[0130] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. The terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0131] The methods and apparatus provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the methods and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for adjusting the angle of an ion beam, characterized in that, The method includes: The injection angle difference of the ion beam in drift mode and acceleration mode is determined, wherein the drift mode is the motion state of the ion beam when the acceleration tube is closed, and the acceleration mode is the motion state of the ion beam when the acceleration tube is open. The deflection voltage of the guiding electrode is adjusted based on the injection angle difference, so that the first injection angle of the ion beam in drift mode is close to the second injection angle in acceleration mode, until the injection angle difference between drift mode and acceleration mode is less than the measurement accuracy of the angle measuring device.

2. The method according to claim 1, characterized in that, The adjustment of the deflection voltage of the guiding electrode based on the injection angle difference includes: The deflection voltage of the guiding electrode is adjusted based on the injection angle difference of the current round, and the injection angle difference of the next round is determined based on the adjusted deflection voltage. If the injection angle difference in the next round is less than the measurement accuracy of the angle measuring device, the deflection voltage is adjusted. If the injection angle difference in the next round is greater than or equal to the measurement accuracy of the angle measuring device, the deflection voltage of the guiding electrode is adjusted based on the injection angle difference in the next round.

3. The method according to claim 1, characterized in that, In the acceleration mode, the energy of the ion beam is increased to n times the energy before the ion beam enters the acceleration tube after being accelerated by the acceleration tube, where the value of n is greater than or equal to 1.5 and less than or equal to 3.

4. The method according to claim 1, characterized in that, The adjustment of the deflection voltage of the guiding electrode based on the injection angle difference includes: Determine the correspondence between the injection angle difference of the ion beam in drift mode and acceleration mode and the adjustment voltage of the guiding electrode; The adjustment voltage of the guiding electrode is determined based on the correspondence and the injection angle difference; The deflection voltage of the guiding electrode is adjusted based on the aforementioned adjustment voltage.

5. The method according to claim 4, characterized in that, The method for determining the correspondence includes: The experiment determined multiple first injection angles corresponding to multiple deflection voltages of the ion beam in drift mode; The correspondence is determined based on the plurality of deflection voltages and the corresponding plurality of first injection angles.

6. The method according to claim 5, characterized in that, Determining the correspondence based on the plurality of deflection voltages and the corresponding plurality of first injection angles includes: The plurality of deflection voltages are linearly fitted to the corresponding plurality of first injection angles; The slope of the linearly fitted line is determined as the correspondence.

7. The method according to claim 1, characterized in that, The method further includes: The deflection voltage is adjusted according to the offset angle between the ion beam and the beam center; wherein... The offset angle is the difference between the measuring angle of the assembled angle measuring device and the zero-point offset angle; The zero-point offset angle is the second injection angle when the injection angle difference is less than the measurement accuracy.

8. An ion beam angle adjustment device, characterized in that, The device includes: The processing unit is configured to determine the injection angle difference of the ion beam in a drift mode and an acceleration mode, wherein the drift mode is the motion state of the ion beam when the acceleration tube is closed, and the acceleration mode is the motion state of the ion beam when the acceleration tube is open. The adjustment unit is configured to adjust the deflection voltage of the guiding electrode based on the injection angle difference, so that the first injection angle of the ion beam in drift mode is close to the second injection angle in acceleration mode, until the injection angle difference between drift mode and acceleration mode is less than the measurement accuracy of the angle measuring device.

9. An electronic device, characterized in that, include: Processor, memory; The memory is used to store computer programs; The processor is configured to execute the ion beam angle adjustment method as described in any one of claims 1-7 by invoking the computer program.

10. An ion implanter, characterized in that, The ion implanter includes the electronic device as described in claim 9.

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