Oxide thin film transistor, preparation method and hydrogen-oxygen synergistic regulation method

Abstract

The application provides an oxide thin film transistor, a preparation method and a hydrogen-oxygen synergistic regulation method, and belongs to the technical field of semiconductor devices. A hydrogen regulation layer is arranged on a first surface and is used for transmitting hydrogen ions and blocking oxygen ions. A hydrogen reversible layer is arranged on a surface of the hydrogen regulation layer away from an oxide channel layer and is used for storing and releasing hydrogen ions under the control of a gate voltage time sequence. An oxygen regulation layer is arranged on a second surface and is used for transmitting oxygen ions. An oxygen reversible layer is arranged on a surface of the oxygen regulation layer away from the oxide channel layer and is used for storing and releasing oxygen ions under the control of the gate voltage time sequence. The hydrogen regulation layer and the hydrogen reversible layer form a hydrogen regulation channel, and the oxygen regulation layer and the oxygen reversible layer form an oxygen regulation channel, so that automatic storage, release and reversible circulation of hydrogen ions and oxygen ions can be realized, and the problem that a traditional structure can only realize one-way storage and release of hydrogen ions or oxygen ions and cannot realize hydrogen-oxygen two-way synergistic regulation is solved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor device technology, and particularly relates to an oxide thin film transistor, its fabrication method, and a hydrogen-oxygen synergistic regulation method. Background Technology

[0002] Indium gallium zinc oxide (In-Ga-Zn-O, IGZO) thin-film transistors (TFTs) are widely used in displays and sensing due to their advantages such as high mobility, low power consumption, and good uniformity. However, hydrogen and oxygen ions in IGZO TFTs significantly affect the electrical properties of the IGZO semiconductor layer. Hydrogen ions typically act as donors, increasing charge carriers and causing a negative shift in the threshold voltage of the TFT. Oxygen ions can repair lattice oxygen vacancies, acting as acceptors and reducing charge carriers, thus causing a positive shift in the threshold voltage of the TFT.

[0003] However, in the traditional structure of IGZO TFT, the regulation of hydrogen ions and oxygen ions mostly adopts a single storage layer structure, which can only realize the unidirectional storage and release of hydrogen ions or oxygen ions, and cannot achieve bidirectional synergistic regulation of hydrogen and oxygen. Summary of the Invention

[0004] The purpose of this application is to provide an oxide thin film transistor, its fabrication method, and a hydrogen-oxygen synergistic control method, aiming to solve the problem that the traditional structure of IGZO TFTs, which often uses a single storage layer structure to control hydrogen and oxygen ions, cannot achieve bidirectional hydrogen-oxygen synergistic control.

[0005] This application provides an oxide thin-film transistor, comprising: An oxide trench layer has a first surface and a second surface disposed opposite to each other; A hydrogen regulation layer is disposed on the first surface to allow hydrogen ions to pass through while blocking oxygen ions. A hydrogen reversible layer is disposed on the surface of the hydrogen control layer away from the oxide channel layer, for storing and releasing hydrogen ions under the control of the gate voltage timing. An oxygen regulation layer is disposed on the second surface to allow oxygen ions to pass through while blocking hydrogen ions. An oxygen reversible layer is disposed on the surface of the oxygen control layer away from the oxide channel layer, and is used to store and release oxygen ions under the control of the gate voltage timing.

[0006] In some embodiments, the oxide thin-film transistor further includes: An insulating passivation layer is disposed on the surface of the hydrogen reversible layer away from the hydrogen control layer; A gate layer is disposed on the surface of the insulating passivation layer away from the hydrogen reversible layer, and the insulating passivation layer covers the gate layer.

[0007] In some embodiments, the oxide thin-film transistor further includes: A passivation protective layer is disposed on the surface of the oxygen reversible layer away from the oxygen regulation layer; A source layer is disposed on the surface of the passivation protection layer away from the oxygen reversible layer, and the source layer is in ohmic contact with the oxide channel layer; A drain layer is disposed at a distance from the source layer on the surface of the passivation protection layer away from the oxygen reversible layer, and the drain layer is in ohmic contact with the oxide channel layer.

[0008] In some embodiments, the hydrogen reversible layer is made of a palladium-nickel alloy, wherein the mass percentage of palladium to nickel in the palladium-nickel alloy is 4:1.

[0009] In some embodiments, the hydrogen control layer is made of alumina, and the hydrogen control layer is dense and uniform, with a thickness of 3 nanometers to 5 nanometers.

[0010] In some embodiments, the oxygen control layer is made of silicon dioxide or silicon oxynitride, and the oxygen control layer is provided with microporous channels.

[0011] In some embodiments, the oxygen reversible layer is made of cerium oxide.

[0012] This application provides a method for fabricating an oxide thin-film transistor, comprising: A substrate is provided on which a palladium-nickel alloy film is formed; The palladium-nickel alloy film is annealed in a nitrogen-hydrogen mixed atmosphere at a temperature of 280°C to 300°C to prepare a hydrogen reversible layer; the hydrogen reversible layer is used to store and release hydrogen ions. An alumina film is deposited on the surface of the hydrogen reversible layer using atomic layer deposition (ALD) to prepare a hydrogen regulation layer; the hydrogen regulation layer is used to allow hydrogen ions to pass through while blocking oxygen ions. An oxide channel layer, an oxygen control layer, and a cerium oxide film layer are sequentially fabricated from bottom to top on the surface of the hydrogen control layer; the oxygen control layer is used to allow oxygen ions to pass through while blocking hydrogen ions. The cerium oxide film is annealed in an oxygen atmosphere at a temperature of 240°C to 260°C to prepare an oxygen reversible layer; the oxygen reversible layer is used to store and release oxygen ions.

[0013] This application provides a method for hydrogen-oxygen synergistic regulation, which performs hydrogen-oxygen synergistic regulation based on any one of the oxide thin-film transistors described in the above embodiments. The method includes: According to the gate voltage timing, a positive bias voltage is applied to the gate layer to control hydrogen ions to enter the oxide channel layer from the hydrogen reversible layer and the hydrogen control layer, while the source layer and the drain layer are floating. And / or, according to the gate voltage timing, a negative bias voltage is applied to the gate layer to control oxygen ions to enter the oxide channel layer from the oxygen reversible layer and the oxygen control layer, while the source layer and the drain layer are grounded.

[0014] In some embodiments, the method further includes: According to the gate voltage timing, a negative bias voltage is applied to the gate layer to control hydrogen ions to be drawn back from the oxide channel layer and the hydrogen control layer to the hydrogen reversible layer, while the source layer and the drain layer are floating. And / or, according to the gate voltage timing, a positive bias voltage is applied to the gate layer to control oxygen ions to be drawn back from the oxide channel layer and the oxygen control layer to the oxygen reversible layer, and the source layer and drain layer are grounded.

[0015] The beneficial effects of the embodiments of the present invention compared with the prior art are as follows: A hydrogen control layer and a hydrogen reversible layer are disposed on one side of the first surface of the oxide channel layer. An oxygen control layer and an oxygen reversible layer are disposed on one side of the second surface of the oxide channel layer. The oxide channel layer is positioned between the hydrogen control layer and the oxygen control layer, serving as a dual-ion control core layer to enable electron transport. The hydrogen control layer allows hydrogen ions, such as H+, to pass through. + It can also block oxygen ions, such as O²⁺. - The oxygen regulation layer allows oxygen ions, such as O²⁺, to pass through. - or / and oxygen-related species, and block hydrogen ions, such as H+. + .

[0016] The hydrogen control layer and the hydrogen reversible layer form a hydrogen control channel, which can store and release hydrogen ions, enabling reversible hydrogen ion migration. During initial annealing, the hydrogen reversible layer absorbs hydrogen ions from the preparation environment, forming metal hydrides, thus storing hydrogen ions. Under the control of the gate voltage timing, when a positive bias is applied to the gate layer and the source and drain layers are floating, hydrogen ions in the hydrogen reversible layer are injected into the oxide channel layer through the hydrogen control layer driven by the electric field, realizing hydrogen ion injection into the oxide channel layer. The hydrogen reversible layer then releases hydrogen ions. Under the control of the gate voltage timing, when a negative bias is applied to the gate layer and the source and drain layers are floating, hydrogen ions in the oxide channel layer are pulled back to the hydrogen reversible layer through the hydrogen control layer driven by the electric field, restoring their initial state, thus extracting hydrogen ions from the oxide channel layer. The hydrogen reversible layer then stores hydrogen ions.

[0017] The oxygen control layer and the oxygen reversible layer form an oxygen control channel, which can store and release oxygen ions, enabling reversible migration of oxygen ions. The oxygen reversible layer stores and releases oxygen ions through reversible redox reactions. Under the control of the gate voltage timing, when a negative bias is applied to the gate layer and the source and drain layers are grounded, oxygen ions are induced to migrate downwards from the oxygen reversible layer through the oxygen control layer into the oxide channel layer, increasing the oxygen vacancy concentration and realizing the injection of oxygen ions into the oxide channel layer. The oxygen reversible layer realizes the release of oxygen ions. Under the control of the gate voltage timing, when a positive bias is applied to the gate layer and the source and drain layers are grounded, oxygen ions are pulled back from the oxide channel layer through the oxygen control layer to the oxygen reversible layer, restoring the oxygen vacancy concentration in the oxide channel layer and realizing the extraction of oxygen ions from the oxide channel layer. The oxygen reversible layer realizes the storage of oxygen ions.

[0018] Furthermore, in the oxide thin-film transistor provided in this application, the hydrogen control layer and the hydrogen reversible layer form a hydrogen control channel, and the oxygen control layer and the oxygen reversible layer form an oxygen control channel, constructing a smart TFT structure capable of independent, reversible, and cyclic control of hydrogen and oxygen ions. This enables the automatic storage, release, and reversible cycling of hydrogen and oxygen ions. Therefore, the oxide thin-film transistor provided in this application can achieve real-time reversible control of hydrogen and oxygen ions, solving the problem that traditional IGZO TFT structures often employ a single storage layer structure for hydrogen and oxygen ion control, only enabling unidirectional storage and release of either hydrogen or oxygen ions, and failing to achieve bidirectional synergistic control of hydrogen and oxygen. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or exemplary technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 Schematic cross-sectional view of oxide thin-film transistors in some embodiments provided in this application; Figure 2 Top view of oxide thin film transistor and schematic diagram of TFT equivalent circuit in some embodiments provided in this application; Figure 3 A schematic diagram illustrating the steps of the method for fabricating oxide thin-film transistors in some embodiments provided in this application; Figure 4 The following are schematic diagrams illustrating the steps of the hydrogen-oxygen synergistic regulation method in some embodiments provided in this application. Detailed Implementation

[0021] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0022] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0023] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0024] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include one or more of that feature. Additionally, in the embodiments of this application, the terms "first" and "second" are used to distinguish identical or similar items that have substantially the same function and effect. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or order of execution, and that "first" and "second" do not necessarily imply difference.

[0025] In the description of this application, unless otherwise stated, " / " indicates that the objects before and after it are in an "or" relationship. For example, A / B can mean A or B. "And / or" in this application is merely a description of the relationship between the related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone, where A and B can be singular or plural. Furthermore, in the description of this application, unless otherwise stated, "multiple" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.

[0026] IGZO, as a core material of amorphous oxide semiconductors, relies on oxygen vacancy-dominated electron transport for conductivity, combined with the orbital overlap mechanism inherent in amorphous structures, to achieve high carrier mobility and stable conductivity. In the traditional structure of IGZO TFTs, hydrogen ions (H+)... + ) and oxygen ions (O²) - The regulation of hydrogen ions and oxygen ions mostly adopts a single storage layer structure, which can only achieve unidirectional storage and release of hydrogen ions or oxygen ions, and cannot achieve bidirectional synergistic regulation of hydrogen and oxygen.

[0027] Furthermore, in the traditional structure of IGZO TFTs, the hydrogen and oxygen ion regulation of the IGZO TFT is usually fixed during the film preparation process, making it impossible to perform targeted regulation later. This leaves no room for trial and error during the engineering fabrication process, resulting in significant waste and irreversibility. Moreover, after threshold voltage Vth drift occurs due to the fabrication process or aging, complex peripheral compensation circuits are required to correct the TFT characteristics.

[0028] For the above issues, please refer to Figure 1 This application provides an oxide thin-film transistor. The oxide thin-film transistor includes an oxide channel layer 10, a hydrogen control layer 20, a hydrogen reversible layer 30, an oxygen control layer 40, and an oxygen reversible layer 50. The oxide channel layer 10 has a first surface 110 and a second surface 120 disposed opposite to each other.

[0029] A hydrogen control layer 20 is disposed on the first surface 110, allowing hydrogen ions to pass through while blocking oxygen ions. A hydrogen reversible layer 30 is disposed on the surface of the hydrogen control layer 20 away from the oxide channel layer 10, for storing and releasing hydrogen ions. An oxygen control layer 40 is disposed on the second surface 120, allowing oxygen ions to pass through. An oxygen reversible layer 50 is disposed on the surface of the oxygen control layer 40 away from the oxide channel layer 10, for storing and releasing oxygen ions.

[0030] In this embodiment, the hydrogen control layer 20 and the hydrogen reversible layer 30 are disposed on one side of the first surface 110 of the oxide channel layer 10. The oxygen control layer 40 and the oxygen reversible layer 50 are disposed on one side of the second surface 120 of the oxide channel layer 10. The oxide channel layer 10 is disposed between the hydrogen control layer 20 and the oxygen control layer 40, serving as a dual-ion control core layer, which enables electron transport. The hydrogen control layer 20 is permeable to hydrogen ions, such as H+. + It can also block oxygen ions, such as O²⁺. - The oxygen regulation layer 40 allows oxygen ions, such as O²⁺, to pass through. - or / and oxygen-related species, and block hydrogen ions, such as H+. + .

[0031] The hydrogen control layer 20 and the hydrogen reversible layer 30 form a hydrogen control channel, which can store and release hydrogen ions, enabling reversible migration of hydrogen ions. During initial annealing, the hydrogen reversible layer 30 absorbs hydrogen ions from the preparation environment, forming metal hydrides, thus storing hydrogen ions. Under the control of the gate voltage timing, when a positive bias is applied to the gate layer and the source and drain layers are floating, hydrogen ions in the hydrogen reversible layer 30 are injected into the oxide channel layer 10 through the hydrogen control layer 20 driven by the electric field, realizing the injection of hydrogen ions into the oxide channel layer 10. The hydrogen reversible layer 30 realizes the release of hydrogen ions. Under the control of the gate voltage timing, when a negative bias is applied to the gate layer and the source and drain layers are floating, hydrogen ions in the oxide channel layer 10 are pulled back to the hydrogen reversible layer 30 through the hydrogen control layer 20 driven by the electric field, restoring their initial state, thus realizing the extraction of hydrogen ions from the oxide channel layer 10. The hydrogen reversible layer 30 realizes the storage of hydrogen ions.

[0032] The oxygen control layer 40 and the oxygen reversible layer 50 form an oxygen control channel, which can store and release oxygen ions, enabling reversible migration of oxygen ions. The oxygen reversible layer 50 stores and releases oxygen ions through reversible redox reactions. Under the control of the gate voltage timing, when a negative bias is applied to the gate layer and the source and drain layers are grounded, oxygen ions are induced to migrate downwards from the oxygen reversible layer 50 through the oxygen control layer 40 and into the oxide channel layer 10, increasing the oxygen vacancy concentration and realizing the injection of oxygen ions into the oxide channel layer 10. The oxygen reversible layer 50 realizes the release of oxygen ions. Under the control of the gate voltage timing, when a positive bias is applied to the gate layer and the source and drain layers are grounded, oxygen ions are pulled back from the oxide channel layer 10 through the oxygen control layer 40 to the oxygen reversible layer 50, restoring the oxygen vacancy concentration in the oxide channel layer 10 and realizing the extraction of oxygen ions from the oxide channel layer 10. The oxygen reversible layer 50 realizes the storage of oxygen ions.

[0033] Furthermore, in the oxide thin-film transistor provided in this application, the hydrogen control layer 20 and the hydrogen reversible layer 30 form a hydrogen control channel, and the oxygen control layer 40 and the oxygen reversible layer 50 form an oxygen control channel, constructing a smart TFT structure capable of independent, reversible, and cyclic control of hydrogen and oxygen ions, enabling automatic storage, release, and reversible cycling of hydrogen and oxygen ions. Thus, the oxide thin-film transistor provided in this application enables real-time reversible control of hydrogen and oxygen ions, solving the problem that traditional IGZO TFT structures often employ a single storage layer structure for hydrogen and oxygen ion control, only achieving unidirectional storage and release of hydrogen or oxygen ions, and failing to achieve bidirectional synergistic control of hydrogen and oxygen.

[0034] In some embodiments, the oxide channel layer 10 is made of IGZO and has a thickness of 50 to 60 nanometers. The general chemical formula of IGZO is (In₂O₃)x(Ga₂O₃)y(ZnO)₁. x IGZO, with a cation ratio of In:Ga:Zn = 1:1:1, is sensitive to both hydrogen and oxygen vacancies. The conductivity of IGZO stems from its unique atomic structure and electron orbital distribution. At room temperature, IGZO is amorphous (a-IGZO), lacking long-range atomic order but possessing localized short-range ordered regions, thus avoiding the carrier scattering problem caused by grain boundaries in crystalline semiconductors.

[0035] IGZO conductivity depends on the ns orbitals (n≥4) of the metal cations and the In³⁺. + 5s orbit, Ga³ + 4s orbital and Zn² + The 4s orbitals of IGZO have a large radius and are spherical. Even in amorphous structures, the ns orbitals of adjacent metal ions can effectively overlap to form continuous "conductive channels," which is the key reason why the mobility of IGZO is much higher than that of amorphous silicon (a-Si).

[0036] IGZO has a bandgap of approximately 3.0 to 3.5 eV, classifying it as a wide bandgap semiconductor. The conduction band bottom of IGZO is formed by the 5s orbitals of In, and the valence band top is formed by the 2p orbitals of O. The Fermi level (E_F) position can be tuned by the oxygen vacancy concentration, exhibiting n-type conductivity. The core of IGZO's conductivity lies in the carrier generation and transport mechanism. Electrons are the primary carriers in IGZO, and the entire conduction process consists of two steps: carrier generation and carrier transport, both related to material defects and electronic state characteristics.

[0037] In IGZO, the charge carriers (electrons) primarily originate from oxygen vacancies (V_O). This is illustrated through the IGZO TFT equivalent circuit. Figure 2 As shown, the gate layer voltage modulates the carrier concentration in the conductive channel through the field effect. When the gate layer voltage is positive (which can also be understood as a positive bias), the gate electric field causes the energy band at the interface between IGZO and the insulating passivation layer 60 to bend, the Fermi level shifts above the mobility edge, and a high-concentration electron conductive channel is formed in the interface region, turning the device on. When the gate layer voltage is zero or negative (which can also be understood as a negative bias), the electric field disappears, the electron concentration in the conductive channel decreases, the device turns off, and the leakage current is extremely low. For IGZO TFT devices, hydrogen ions and oxygen ions have a significant impact on the electrical properties of the IGZO film. Hydrogen ions typically act as donors, increasing the number of carriers and causing a negative shift in the threshold voltage Vth of the thin-film transistor. Oxygen ions can repair lattice oxygen vacancies, acting as acceptor compensation and reducing the number of carriers, causing a positive shift in the threshold voltage Vth of the thin-film transistor. Therefore, by adjusting the injection or extraction of hydrogen and oxygen ions, the core characteristics of IGZO TFTs, such as mobility and on / off ratio, can be controlled.

[0038] In some embodiments, the oxide thin-film transistor further includes an insulating passivation layer 60 and a gate layer 710. The insulating passivation layer 60 is disposed on the surface of the hydrogen reversible layer 30 away from the hydrogen control layer 20. The gate layer 710 is disposed on the surface of the insulating passivation layer 60 away from the hydrogen reversible layer 30, and the insulating passivation layer 60 covers the gate layer 710.

[0039] In this embodiment, the insulating passivation layer 60 is a stack of aluminum oxide (Al2O3) and silicon oxide (SiO2) with a thickness of 200 nanometers to 400 nanometers. It serves as an insulating layer for the gate layer 710 and can block ion diffusion.

[0040] The gate layer 710 serves as the control electrode of the TFT, receiving external driving voltages. By applying voltages of different amplitudes, a corresponding electric field is generated. When a forward turn-on voltage is applied to the gate layer 710, the electric field induces the oxide channel layer 10 to form a conductive path, turning on the TFT. When a reverse turn-off voltage is applied to the gate layer 710, the electric field disappears, the oxide channel layer 10 returns to its insulating state, and the TFT turns off.

[0041] The insulating passivation layer 60 serves as an insulating layer for the gate layer 710, acting as a transmission carrier of the electric field and an electrical isolation barrier. It effectively blocks leakage between the gate layer 710 and the oxide channel layer 10, preventing direct conduction between the two and causing short circuits or device failures. At the same time, it prevents metal ions in the gate layer 710 from diffusing into the oxide channel layer 10.

[0042] The gate layer 710 is made of copper and has a thickness of 200 to 300 nanometers, serving as an electrode for electric field modulation. Using copper for the gate layer 710 allows for efficient transmission of the driving voltage through the low-resistance copper layer, reducing signal loss and ensuring stable generation of the electric field.

[0043] In some embodiments, the oxide thin-film transistor further includes a passivation protection layer 80, a source layer 720, and a drain layer 730. The passivation protection layer 80 is disposed on the surface of the oxygen reversible layer 50 away from the oxygen control layer 40. The source layer 720 is disposed on the surface of the passivation protection layer 80 away from the oxygen reversible layer 50. The source layer 720 is in 10-ohm contact with the oxide channel layer.

[0044] The drain layer 730 and the source layer 720 are disposed at a distance from the surface of the passivation protection layer 80 away from the oxygen reversible layer 50. The drain layer 730 is in 10-ohm contact with the oxide channel layer.

[0045] In this embodiment, the passivation layer 80 can be made of silicon oxide, serving as both an environmental barrier and a structural protector. The thickness of the passivation layer 80 is 200 to 400 nanometers. The source layer 720 and drain layer 730 can be made of a molybdenum-niobium alloy-copper composite metal material. The source layer 720 and drain layer 730 serve as metal electrodes, contacting the oxide channel layer 10 to achieve ohmic contact.

[0046] The drain layer 730 and source layer 720 serve as the current input and output terminals of the oxide thin-film transistor, forming an ohmic contact with the oxide channel layer 10 for transmitting drive current. The passivation layer 80 contacts the drain layer 730 and source layer 720, providing electrical isolation, structural protection, and ion blocking. The passivation layer 80 isolates the drain layer 730 and source layer 720 from contact with surrounding traces, preventing short-circuit leakage. Furthermore, the passivation layer 80 blocks the diffusion of metal ions into the oxide channel layer 10, preventing threshold voltage drift and increased device leakage.

[0047] In some embodiments, the hydrogen reversible layer 30 is made of a palladium-nickel alloy, and the mass percentage of palladium to nickel in the palladium-nickel alloy is 4:1.

[0048] In this embodiment, the thickness of the hydrogen reversible layer 30 is 20 nm to 50 nm. The mass ratio of palladium to nickel is 4:1, which optimizes the internal electronic structure and lattice gaps of the alloy, providing sufficient adsorption and insertion sites for hydrogen ions and effectively improving the electrochemical hydrogen storage capacity. Simultaneously, the 4:1 mass ratio of palladium to nickel can mitigate lattice distortion and volume expansion during hydrogen ion adsorption and desorption, thereby ensuring excellent cycle stability during hydrogen storage and achieving synergistic optimization of high capacity and long cycle life.

[0049] In some embodiments, the hydrogen control layer 20 is made of alumina, and the hydrogen control layer 20 is dense and uniform, with a thickness of 3 nanometers to 5 nanometers.

[0050] In this embodiment, the hydrogen control layer 20 is made of aluminum oxide (Al2O3). The hydrogen control layer 20 is dense and uniform, with a continuous and complete film layer, ensuring the absence of microscopic defects such as pinholes and pores, thus allowing hydrogen ions (e.g., H+) to pass through. + It migrates under an electric field, but can also block electrons and oxygen ions (e.g., O²). - ).

[0051] The hydrogen regulation layer 20 has a thickness of 3 to 5 nanometers, which not only allows hydrogen ions (such as H+) to be controlled, but also enables the control of hydrogen ions to be controlled. + Under an electric field, it can smoothly penetrate into or exit the oxide trench layer 10, while maintaining the insulating properties of the film, preventing interlayer leakage, and blocking electrons and oxygen ions (e.g., O²⁺).- ).

[0052] In some embodiments, the oxygen control layer 40 is made of silicon dioxide or silicon oxynitride, and the oxygen control layer 40 is provided with microporous channels.

[0053] In this embodiment, the oxygen control layer 40 is made of silicon oxide (SiO2) or silicon oxynitride (SiON). The thickness of the oxygen control layer 40 is 4 nanometers to 6 nanometers. The oxygen control layer 40 has microporous channels, which can be understood as a porous silicon oxide film or silicon oxynitride film. The oxygen control layer 40 utilizes a loose structure or nitrogen doping to provide oxygen ions (e.g., O²⁻). - The migration channels of oxygen ions (e.g., O²⁺) allow oxygen ions (e.g., O²⁺) to migrate smoothly. - It can be injected through the oxide trench layer 10 or extracted from the oxide trench layer 10.

[0054] The oxygen regulation layer 40 has a thickness of 4 to 6 nanometers, which not only allows oxygen ions (such as O²⁺) to be regulated, but also... - Under an electric field, it can smoothly penetrate into or exit the oxide trench layer 10, while maintaining the insulating properties of the film, preventing interlayer leakage, and blocking hydrogen ions (e.g., H+). + ).

[0055] In some embodiments, the oxygen reversible layer 50 is made of cerium oxide.

[0056] In this embodiment, the oxygen reversible layer 50 is made of cerium oxide (CeO2-x) with a thickness of 10 to 30 nanometers. CeO2-x serves as an oxygen storage material, and through the reversible CeO2-x... 4+ With Ce³ + It can store and release oxygen ions through redox reactions. The oxygen reversible layer 50 has a thickness of 10 to 30 nanometers, which facilitates the formation of a uniform and continuous film layer. It can block the intrusion of external water vapor and impurity ions, and can also efficiently exchange oxygen with the oxide channel layer 10. At the same time, the thickness of the oxygen reversible layer 50 of 10 to 30 nanometers gives it excellent insulation properties and prevents interlayer conductivity.

[0057] Therefore, by connecting the oxide thin-film transistor (TFT) provided in this application to an external driving circuit, hydrogen and oxygen calibration can be performed in the initial stage of the display panel. By selecting different electrode combinations and bias polarities, the migration of hydrogen or oxygen ions can be triggered independently, that is, the injection and extraction of hydrogen and / or oxygen ions into the oxide channel layer 10 can be realized, accurately compensating for the threshold voltage Vth drift caused by process or aging, without the need for complex peripheral compensation circuits, thus solving the problems of complex traditional TFT structures, mutual interference between hydrogen and oxygen ions, and poor cycle stability.

[0058] Furthermore, the oxide thin-film transistor provided in this application is compatible with mass production. Please refer to [link / reference]. Figure 3 This application provides a method for fabricating an oxide thin-film transistor, comprising: Step S110: Provide a substrate 90, on which a palladium-nickel alloy film layer is formed; In step S120, the palladium-nickel alloy film is annealed in a nitrogen-hydrogen mixed atmosphere at a temperature of 280°C to 300°C to prepare a hydrogen reversible layer 30; the hydrogen reversible layer 30 is used to store and release hydrogen ions. In step S130, an aluminum oxide film is deposited on the surface of the hydrogen reversible layer 30 using an atomic layer deposition process to prepare a hydrogen regulation layer 20; the hydrogen regulation layer 20 is used to allow hydrogen ions to pass through while blocking oxygen ions. In step S140, an oxide channel layer 10, an oxygen control layer 40, and a cerium oxide film layer are sequentially prepared from bottom to top on the surface of the hydrogen control layer 20; the oxygen control layer 40 is used to allow oxygen ions to pass through and block hydrogen ions. In step S150, the cerium oxide film is annealed in an oxygen atmosphere at a temperature of 240°C to 260°C to prepare an oxygen reversible layer 50; the oxygen reversible layer 50 is used to store and release oxygen ions.

[0059] In this embodiment, in step S110, the substrate 90 can be a glass substrate. A palladium-nickel alloy film is deposited on the surface of the substrate 90. In step S120, the palladium-nickel alloy film is annealed at a temperature of 280°C to 300°C. This promotes the diffusion and rearrangement of palladium and nickel atoms, optimizes the alloy grain structure, makes the palladium-nickel alloy film denser and smoother, and reduces grain boundary defects. Simultaneously, during the annealing process using a nitrogen-hydrogen mixed atmosphere, nitrogen acts as an inert protective atmosphere, isolating oxygen and moisture, preventing nickel from being oxidized to form insulating oxides during annealing, and preventing increased contact resistance and deterioration of electrode performance.

[0060] During the annealing process of the palladium-nickel alloy film in a nitrogen-hydrogen mixed atmosphere, hydrogen can be pre-introduced into the palladium-nickel alloy to optimize the lattice interstitial structure, improve the electrochemical hydrogen storage capacity of the alloy, and simultaneously enhance the structural stability during hydrogen adsorption and desorption cycles. By annealing the palladium-nickel alloy film in a nitrogen-hydrogen mixed atmosphere at temperatures ranging from 280°C to 300°C, hydrogen storage can be activated, thus preparing a hydrogen reversible layer 30 for thin-film transistors (TFTs).

[0061] In step S130, an alumina film is deposited on the surface of the hydrogen reversible layer 30 using atomic layer deposition (ALD). This ensures that the prepared hydrogen control layer 20 is dense and intact, without pinholes, allowing hydrogen ions (e.g., H+) to pass through. +It migrates under an electric field, but can also block electrons and oxygen ions (e.g., O²). - ).

[0062] In step S140, an oxide channel layer 10, an oxygen control layer 40, and a cerium oxide film are deposited sequentially from bottom to top on the surface of the hydrogen control layer 20. The descriptions of the oxide channel layer 10 and the oxygen control layer 40 can be found in the descriptions in the above embodiments.

[0063] In step S150, a low-temperature process was achieved at a temperature of 240°C to 260°C. After the hydrogen reversible layer 30 is prepared, the process temperature involved in subsequent steps should not exceed 300°C to prevent premature escape of hydrogen ions from the hydrogen reversible layer 30, which would affect the subsequent storage and release of hydrogen ions.

[0064] An oxygen-reversible layer 50 was prepared by annealing the cerium oxide film in an oxygen atmosphere. This allows for adjustment of the stoichiometry of cerium oxide (CeO2-x) to form Ce. 4+ With Ce³ + The reversible variable valence system endows the cerium oxide film with the ability to dynamically store and release oxygen ions, which is beneficial for subsequent precise control of the oxygen vacancy concentration in the oxide channel layer 10.

[0065] The oxide thin-film transistor fabrication method provided in this application involves sequentially fabricating a gate layer 710, an insulating passivation layer 60, a hydrogen reversible layer 30, a hydrogen control layer 20, an oxide channel layer 10, an oxygen control layer 40, and an oxygen reversible layer 50 on a substrate 90 from bottom to top. This forms a hydrogen control channel and an oxygen control channel, constructing a smart TFT structure capable of independent, reversible, and cyclic control of hydrogen and oxygen ions. This enables automatic storage, release, and reversible cycling of hydrogen and oxygen ions. Therefore, the oxide thin-film transistor fabricated using the method provided in this application can achieve real-time reversible control of hydrogen and oxygen ions, solving the problem that traditional IGZO TFT structures often employ a single storage layer structure for hydrogen and oxygen ion control, only enabling unidirectional storage and release of either hydrogen or oxygen ions, and failing to achieve bidirectional synergistic control of hydrogen and oxygen.

[0066] In some embodiments, in step S110, a gate layer 710 is fabricated on the substrate 90 using a multi-target sputtering deposition (MTD) process. An insulating passivation layer 60 is fabricated on the surface of the gate layer 710 and the substrate 90 using a single-target sputtering deposition process or a vapor deposition process. The insulating passivation layer 60 covers the gate layer 710 and is in contact with the surface of the substrate 90. A palladium-nickel alloy film is deposited on the surface of the insulating passivation layer 60 using a multi-target sputtering deposition process.

[0067] In some embodiments, after step S150, the method for fabricating an oxide thin-film transistor further includes: Step S160: A passivation protective layer 80 is prepared on the surface of the oxygen reversible layer 50 using a vapor deposition process. In step S170, a source layer 720 and a drain layer 730 are prepared on the surface of the passivation protective layer 80 by using a multi-target magnetron sputtering deposition process and a low-temperature annealing process in a nitrogen-hydrogen mixed atmosphere.

[0068] In this embodiment, in step S160, a passivation protective layer 80 is prepared on the surface of the oxygen reversible layer 50 using a vapor deposition process, which serves to provide environmental isolation and structural protection.

[0069] In step S170, a multi-target magnetron sputtering deposition process is used to deposit two molybdenum-niobium alloy-copper composite metal films at intervals on the surface of the passivation protective layer 80. The deposited molybdenum-niobium alloy-copper composite metal films are then annealed using a nitrogen-hydrogen mixed atmosphere low-temperature annealing process to prepare the source layer 720 and drain layer 730. When using the nitrogen-hydrogen mixed atmosphere low-temperature annealing process, the process temperature should not exceed 300°C to prevent premature escape of hydrogen ions from the hydrogen reversible layer 30, which would affect the subsequent storage and release of hydrogen ions.

[0070] Please see Figure 4 This application provides a hydrogen-oxygen synergistic regulation method, which performs hydrogen-oxygen synergistic regulation based on any one of the oxide thin-film transistors in the above embodiments. The method includes: Step S210: According to the gate voltage timing, a positive bias voltage is applied to the gate layer to control hydrogen ions to enter the oxide channel layer 10 from the hydrogen reversible layer 30 and the hydrogen control layer 20, while the source layer and drain layer are floating. And / or, in step S220, according to the gate voltage timing, a negative bias voltage is applied to the gate layer to control oxygen ions to enter the oxide channel layer 10 from the oxygen reversible layer 50 and the oxygen control layer 40, and the source layer and drain layer are grounded.

[0071] In this embodiment, in steps S210 and S220, the gate voltage timing can be understood as the time sequence relationship of the voltage signal applied to the gate layer of the oxide thin film transistor, including information such as the magnitude of the voltage applied to the gate layer, the duration, and the switching time, which can be set according to the specific application scenario.

[0072] In step S210, a positive bias voltage is applied to the gate layer and the source and drain layers are floating, and hydrogen ions (e.g., H+) in the hydrogen reversible layer 30... +Driven by an electric field, hydrogen ions pass through the hydrogen control layer 20 and enter the oxide channel layer 10, increasing the concentration of hydrogen ions as donors and thus increasing the carrier concentration in the oxide channel layer 10. This leads to a negative shift in the thin-film transistor threshold voltage Vth, making the device easier to turn on. Step S210 achieves hydrogen ion implantation and oxygen ion (e.g., O²⁺) injection. - (It remains still.)

[0073] Alternatively, in step S220, a negative bias is applied to the gate layer and the source and drain layers are grounded, and oxygen ions (e.g., O²) in the oxygen reversible layer 50 are... - Driven by an electric field, oxygen ions penetrate the oxygen control layer 40 and enter the oxide channel layer 10 to repair lattice oxygen vacancies, thus acting as acceptor compensation. This traps charge carriers, reducing the charge carrier concentration and causing a positive shift in the thin-film transistor threshold voltage Vth. Excess oxygen ions can also introduce acceptor defects, causing a positive shift in the thin-film transistor threshold voltage Vth and making the device more difficult to turn on. Step S220 achieves oxygen ion implantation while keeping hydrogen ions stationary.

[0074] When step S210 or step S220 is executed alone, a single ion (oxygen ion or hydrogen ion) is injected into the oxide channel layer 10, which can achieve a single switching threshold and exhibit the characteristics of a high-resistance state or a low-resistance state.

[0075] When steps S210 and S220 are executed simultaneously, according to the gate voltage timing, a positive bias voltage is applied to the gate layer at different times while the source and drain layers are floating, and a negative bias voltage is applied to the gate layer while the source and drain layers are grounded, thereby realizing hydrogen ion implantation and oxygen ion implantation.

[0076] Hydrogen ions (e.g., H+) + Oxygen ions (also known as protons) have small radii and fast migration rates, making them easy to dopant at shallow energy levels, resulting in rapid modulation of conductivity and low threshold response. - The large radius and slow migration of oxygen ions, coupled with deep-level defects and oxygen vacancies, result in slow response, high threshold, and long-term retention characteristics. When hydrogen and oxygen ions are implanted in the oxide channel layer 10, they compete for space, occupying lattice gaps and defect sites, and mutually inhibiting doping depth. Simultaneously, they also cooperate, resulting in the superposition of fast and slow ions, forming multi-level conductivity states, continuously varying thresholds, and intermediate metastable states. Therefore, when hydrogen and oxygen ions are implanted in the oxide channel layer 10, it is no longer a single-threshold switch with a single ion, but rather a multi-threshold, multi-intermediate-state, and time-dependent electrodynamic behavior.

[0077] When steps S210 and S220 are executed simultaneously, the pulse timing of hydrogen ion implantation and oxygen ion implantation in the oxide channel layer 10 differs, resulting in different implantation sequences and proportions. This accurately simulates the biological rule of Spike-Timing Dependent Plasticity (STDP). Simultaneous execution of steps S210 and S220 can be applied to artificial synaptic devices for neuromorphic computing. By utilizing the multi-level conductance, intermediate metastable states, and time-dependent responses from the co-implantation of hydrogen and oxygen ions, continuously adjustable conductance can be achieved, simulating the progressive weight updates of real synapses. Furthermore, simultaneous execution of steps S210 and S220 enables fast and slow ion timing responses, adapting to STDP unsupervised learning. Moreover, simultaneous execution of steps S210 and S220 also allows for multi-value storage, significantly improving computational density and reducing power consumption.

[0078] When steps S210 and S220 are executed simultaneously, they can be applied to low-power neuromorphic perception and edge computing. During this process, dual-ion competition forms a multi-level threshold window, enabling differentiated responses to electrical pulses of different frequencies and timings. Simultaneously, steps S210 and S220 can also be used for visual perception, speech recognition, and biomimetic processing of sensor signals. Furthermore, when steps S210 and S220 are executed simultaneously, no complex external circuitry is required; biomimetic timing information encoding is achieved through the intrinsic ion dynamics of the device, resulting in power consumption far lower than that of digital circuits.

[0079] When steps S210 and S220 are executed simultaneously, it can be applied to multi-value storage and in-memory computing, solving the pain points of traditional in-memory computing such as limited state count, lack of time dependence, and inability to learn biomimetic models. When steps S210 and S220 are executed simultaneously, hydrogen ions and oxygen ions work together to form stable multiple intermediate resistive states, achieving multi-value storage.

[0080] When steps S210 and S220 are executed simultaneously, this can be applied to biomimetic neuroplastic devices to simulate the biological brain. When steps S210 and S220 are executed simultaneously, if hydrogen ions dominate, the fast response and short-term conductance changes can simulate short-term memory (STP). When steps S210 and S220 are executed simultaneously, if oxygen ions dominate, the slow migration and defect solidification can simulate long-term memory (LTP). When steps S210 and S220 are executed simultaneously, if the dominance of hydrogen ions and oxygen ions is reversed, a dynamic transition from short-term to long-term memory can be achieved, completely replicating the biological learning and forgetting patterns.

[0081] In some embodiments, the hydrogen-oxygen synergistic regulation method further includes: Step S230: According to the gate voltage timing, a negative bias voltage is applied to the gate layer to control hydrogen ions to be drawn back from the oxide channel layer 10 and the hydrogen control layer 20 to the hydrogen reversible layer 30, and the source layer and drain layer are floating. And / or, in step S240, according to the gate voltage timing, a positive bias voltage is applied to the gate layer to control oxygen ions to be drawn back from the oxide channel layer 10 and the oxygen control layer 40 to the oxygen reversible layer 50, and the source layer and drain layer are grounded.

[0082] In this embodiment, in step S230, a negative bias is applied to the gate layer while the source and drain layers are floating. Hydrogen ions in the oxide channel layer 10 pass through the hydrogen control layer 20 and enter the hydrogen reversible layer 30 under the drive of the electric field, thus realizing the extraction of hydrogen ions from the oxide channel layer 10 back to the hydrogen reversible layer 30. The donor concentration in the oxide channel layer 10 is restored, causing a positive shift in the threshold voltage Vth of the thin-film transistor. Step S230 achieves the extraction of hydrogen ions while keeping oxygen ions stationary.

[0083] In step S240, a positive bias voltage is applied to the gate layer while the source and drain layers are grounded. Oxygen ions in the oxide channel layer 10 pass through the oxygen control layer 40 and enter the oxygen reversible layer 50 under the drive of the electric field, thus realizing the extraction of oxygen ions from the oxide channel layer 10 back to the oxygen reversible layer 50. Oxygen vacancies in the oxide channel layer 10 are restored, causing a negative shift in the thin-film transistor threshold voltage Vth. Step S240 achieves the extraction of oxygen ions while keeping hydrogen ions stationary.

[0084] When steps S230 and S240 are executed simultaneously, according to the gate voltage timing, a negative bias voltage is applied to the gate layer at different times while the source and drain layers are floating, and a positive bias voltage is applied to the gate layer while the source and drain layers are grounded. This achieves hydrogen ion extraction and oxygen ion extraction, resulting in different extraction times and extraction ratios for hydrogen and oxygen ions. This is also applicable to the application fields when steps S210 and S220 are executed simultaneously.

[0085] In some embodiments, by controlling the gate voltage timing, without applying negative or positive bias to the gate layer, hydrogen ions are controlled in the hydrogen reversible layer 30 and oxygen ions are controlled in the oxygen reversible layer 50 to maintain the channel intrinsicity.

[0086] Therefore, the hydrogen-oxygen synergistic regulation method provided in this application can be applied to fields such as adaptive threshold compensation TFTs, bipolar synaptic devices, and reconfigurable logic devices.

[0087] In adaptive threshold-compensated TFTs, the TFT can be calibrated with hydrogen and oxygen during the display panel initialization phase via an external driving circuit, accurately compensating for threshold voltage Vth drift caused by process or aging, without the need for complex peripheral compensation circuits. In bipolar synaptic devices, hydrogen ion modulation corresponds to short-term plasticity, exhibiting rapid response and easy decay characteristics. Oxygen ion modulation corresponds to long-term plasticity, exhibiting slow change and persistent characteristics. The synergy of hydrogen ion modulation and oxygen ion modulation can realize the complex pulse-time-dependent plasticity function in biological synapses. The hydrogen-oxygen synergistic modulation method provided in this application can also enable the same TFT to switch between enhancement mode (normally off) and depletion mode (normally on). The hydrogen-oxygen synergistic modulation method provided in this application can also achieve dual threshold voltage characteristics.

[0088] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0089] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0090] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0091] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0092] The division into modules or units is merely a logical functional division. In actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be indirect coupling or communication connection through some interfaces, devices, or units, and may be electrical, mechanical, or other forms.

[0093] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0094] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0095] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. An oxide thin-film transistor, characterized in that, include: The oxide channel layer (10) has a first surface (110) and a second surface (120) disposed opposite to each other. A hydrogen regulation layer (20) is disposed on the first surface (110) to allow hydrogen ions to pass through and block oxygen ions; A hydrogen reversible layer (30) is disposed on the surface of the hydrogen control layer (20) away from the oxide channel layer (10) for storing and releasing hydrogen ions under the control of the gate voltage timing. An oxygen regulation layer (40) is disposed on the second surface (120) to allow oxygen ions to pass through and block hydrogen ions; An oxygen reversible layer (50) is disposed on the surface of the oxygen control layer (40) away from the oxide channel layer (10) for storing and releasing oxygen ions under the control of the gate voltage timing.

2. The oxide thin-film transistor as claimed in claim 1, characterized in that, The oxide thin-film transistor further includes: An insulating passivation layer (60) is disposed on the surface of the hydrogen reversible layer (30) away from the hydrogen regulation layer (20); A gate layer (710) is disposed on the surface of the insulating passivation layer (60) away from the hydrogen reversible layer (30), and the insulating passivation layer (60) covers the gate layer (710).

3. The oxide thin-film transistor as claimed in claim 1, characterized in that, The oxide thin-film transistor further includes: A passivation protective layer (80) is disposed on the surface of the oxygen reversible layer (50) away from the oxygen regulation layer (40); A source layer (720) is disposed on the surface of the passivation protection layer (80) away from the oxygen reversible layer (50), and the source layer (720) is in ohmic contact with the oxide channel layer (10); The drain layer (730) is disposed at a distance from the source layer (720) on the surface of the passivation protection layer (80) away from the oxygen reversible layer (50), and the drain layer (730) is in ohmic contact with the oxide channel layer (10).

4. The oxide thin-film transistor according to any one of claims 1 to 3, characterized in that, The hydrogen reversible layer (30) is made of palladium-nickel alloy, and the mass percentage of palladium to nickel in the palladium-nickel alloy is 4:

1.

5. The oxide thin-film transistor according to any one of claims 1 to 3, characterized in that, The hydrogen regulation layer (20) is made of alumina, and the hydrogen regulation layer (20) is dense and uniform, and the thickness of the hydrogen regulation layer (20) is 3 nanometers to 5 nanometers.

6. The oxide thin-film transistor according to any one of claims 1 to 3, characterized in that, The oxygen regulation layer (40) is made of silicon dioxide or silicon oxynitride, and the oxygen regulation layer (40) is provided with microporous channels; The oxygen reversible layer (50) is made of cerium oxide.

7. A method for fabricating an oxide thin-film transistor, characterized in that, include: A substrate (90) is provided, on which a palladium-nickel alloy film layer is formed; The palladium-nickel alloy film is annealed in a nitrogen-hydrogen mixed atmosphere at a temperature of 280°C to 300°C to prepare a hydrogen reversible layer (30); the hydrogen reversible layer (30) is used to store and release hydrogen ions. An alumina film is deposited on the surface of the hydrogen reversible layer (30) using an atomic layer deposition process to prepare a hydrogen regulation layer (20); the hydrogen regulation layer (20) is used to allow hydrogen ions to pass through and block oxygen ions. An oxide channel layer (10), an oxygen control layer (40), and a cerium oxide film layer are sequentially prepared from bottom to top on the surface of the hydrogen control layer (20); the oxygen control layer (40) is used to allow oxygen ions to pass through and block hydrogen ions. The cerium oxide film is annealed in an oxygen atmosphere at a temperature of 240°C to 260°C to prepare an oxygen reversible layer (50); the oxygen reversible layer (50) is used to store and release oxygen ions.

8. A method for synergistic regulation of hydrogen and oxygen, characterized in that, Hydrogen-oxygen synergistic modulation based on an oxide thin-film transistor as described in any one of claims 1 to 7, the method comprising: According to the gate voltage timing, a positive bias voltage is applied to the gate layer to control hydrogen ions to enter the oxide channel layer (10) from the hydrogen reversible layer (30) and the hydrogen control layer (20), while the source layer and drain layer are floating. And / or, according to the gate voltage timing, a negative bias voltage is applied to the gate layer to control oxygen ions to enter the oxide channel layer (10) from the oxygen reversible layer (50) and the oxygen control layer (40), and the source layer and drain layer are grounded.

9. The hydrogen-oxygen synergistic regulation method as described in claim 8, characterized in that, The method further includes: According to the gate voltage timing, a negative bias voltage is applied to the gate layer to control hydrogen ions to be drawn back from the oxide channel layer (10) and the hydrogen control layer (20) to the hydrogen reversible layer (30), and the source layer and drain layer are floated.

10. The hydrogen-oxygen synergistic regulation method as described in claim 8, characterized in that, The method further includes: According to the gate voltage timing, a positive bias voltage is applied to the gate layer to control oxygen ions to be drawn back from the oxide channel layer (10) and the oxygen control layer (40) to the oxygen reversible layer (50), and the source layer and drain layer are grounded.

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