An adjustable edge ring for film uniformity and semiconductor processing equipment

Abstract

This invention relates to the field of wafer processing equipment technology, and more particularly to an edge-pressing ring and semiconductor processing equipment with adjustable edge film uniformity. The ring includes an edge-pressing ring body disposed at the top of an edge ring surrounding a support platform. The edge-pressing ring body has a concave groove communicating with an exhaust port, extending circumferentially from bottom to top, to collect gas discharged from the exhaust port. The edge-pressing ring body has a plurality of first guide holes arranged circumferentially, penetrating the edge-pressing ring body and communicating with the concave groove. The first guide holes are inclined upwards with their outlets facing away from the area directly above the wafer, thus directing the gas in the concave groove away from the area directly above the wafer. This invention avoids the problem in existing structures where gas discharged through the gap between the edge-pressing ring body and the wafer directly impacts the reaction area directly above the wafer, interfering with the local airflow field.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to an edge pressing ring and semiconductor processing equipment with adjustable edge film uniformity. Background Technology

[0002] In the tungsten chemical vapor deposition process for semiconductor manufacturing, when edge trimming of wafers is required, a pressure ring with adjustable edge film uniformity is typically used to shield specific areas. However, existing pressure rings 400 generally employ an integral annular cover plate design, which has significant drawbacks in practical applications: such as... Figure 1 As shown, due to the limitations of the edge ring 400 structure, the gas exiting from the exhaust port 200 enclosed by the support stage 100 and the edge ring 300 can only be discharged to the left through the gap 500 between the edge ring 400 and the wafer 600. The gas discharged through the gap 500 will interfere with the airflow field between the edge ring 400 and the edge of the wafer 600, resulting in uneven distribution of the reactive gas in the edge region of the wafer 600 near the edge ring 400. This leads to poor film deposition thickness and quality consistency in this local area, which seriously restricts the stability of the process window and the yield of the device. Summary of the Invention

[0003] This invention relates to an edge-pressing ring and semiconductor processing equipment with adjustable edge film uniformity. The purpose is to gather the gas discharged from the exhaust port into the converging groove and guide it to the area away from the top of the wafer through the first guide hole. This avoids the problem in the existing structure where the exhaust gas is discharged through the gap between the edge-pressing ring and the wafer and directly rushes into the reaction area above the wafer, interfering with the local airflow field.

[0004] To achieve the above objectives, the present invention provides an edge-pressing ring with adjustable edge film uniformity, comprising: The pressure ring body is located on top of the edge ring surrounding the outer periphery of the support platform, and the pressure ring body covers at least a portion of the top edge annular region of the wafer placed on the support platform, as well as the vent hole formed between the edge ring and the wafer. The pressure ring body has a converging groove that communicates with the exhaust hole from bottom to top. The converging groove is annular and extends along the circumference of the pressure ring body to gather the gas discharged from the exhaust hole. The pressure ring body is provided with a plurality of first guide holes arranged at intervals along the circumference. The first guide holes penetrate the pressure ring body and are connected to the converging groove. The first guide holes extend obliquely from bottom to top and their outlet ends are set towards the area directly above the wafer away from the wafer.

[0005] Optionally, the converging slot is provided with a blocking and shifting component, which includes a circumferential driving component and at least one blocking and shifting component; The shielding and shifting component is movably disposed within the converging groove. The circumferential driving component is connected to the shielding and shifting component to drive the shielding and shifting component to perform circumferential movement within the converging groove. This dynamically adjusts the circumferential position of the shielding and shifting component according to the circumferential airflow field distribution in the area directly above the wafer, thereby shielding the air inlet end of the first guide hole located at that circumferential position and achieving dynamic balance adjustment of the circumferential airflow field in the area directly above the wafer.

[0006] Optionally, the blocking and shifting component includes a first blocking part, which is connected to the circumferential driving component. The first blocking part covers the air inlet end of at least one first guide hole in the orthographic projection structure at the top of the converging groove, so that when the first blocking part is circumferentially rotated to the target position, it can effectively block at least one first guide hole.

[0007] Optionally, the blocking and shifting component further includes a shifting part, a first connecting part, and a radial driving part; An adjustment hole is axially provided on the first shielding part, and the displacement part is movably disposed in the adjustment hole in the radial direction. At least one second guide hole is obliquely provided on the displacement part, which connects the first guide hole and the exhaust hole. The central axis of the cavity of the second guide hole is parallel to the central axis of the cavity of the first guide hole. The radial drive unit is fixed to the outer wall of the first shielding unit; The first connecting part moves radially through the first blocking part and extends into the adjusting hole to connect with the shifting part. The radial driving part is connected to the shifting part through the first connecting part to drive the shifting part to move the second guiding hole on it radially, thereby adjusting the radial distance between the gas conduction channel formed by the communication between the second guiding hole and the first guiding hole and the wafer.

[0008] Optionally, the blocking and shifting component further includes an elastic sealing portion, which comprises a first sub-sealing portion and a second sub-sealing portion: The first sub-blocking part is disposed near the air inlet end of the adjusting hole, the inner ring wall of the first sub-blocking part is fixedly connected to the outer ring wall of the shifting part, and its outer ring wall is fixedly connected to the inner ring wall of the adjusting hole. The second sub-blocking part is located near the air outlet end of the adjusting hole. The inner ring wall of the second sub-blocking part is fixedly connected to the outer ring wall of the shifting part, and its outer ring wall is fixedly connected to the inner ring wall of the adjusting hole.

[0009] Optionally, the blocking and shifting component further includes a second blocking part, a second connecting part, and a fine-tuning drive part; The displacement part is provided with a receiving cavity communicating with the second guide hole in the radial direction, and the second shielding part is movably disposed in the receiving cavity; The fine-tuning drive unit is fixed to the outer wall of the displacement unit; The second connecting part moves radially through the displacement part and extends into the receiving cavity to connect with the second blocking part. The fine-tuning drive part is connected to the second blocking part through the second connecting part to drive the second blocking part to move radially, thereby adjusting the flow cross section of the second guide hole.

[0010] Optionally, the circumferential drive component includes a first docking portion and a second docking portion; The first docking part is connected to the first shielding part. The second docking part has an annular structure and is fixedly disposed on the top of the converging groove in the circumferential direction. The second docking part has a groove extending in the circumferential direction recessed from the bottom to the top. The first docking part is movably inserted into the groove so that the circumferential position of the first shielding part in the converging groove can be adjusted by the circumferential movement of the first docking part in the groove.

[0011] Optionally, the circumferential drive component further includes a first drive unit and a plurality of second drive units; The first driving part is located at the top of the first docking part; Several second driving units are spaced circumferentially at the top of the slide groove; the first driving unit and several second driving units are respectively connected to an independent power supply, and the first driving unit is attracted to move the first blocking part circumferentially by controlling the power on and off of each second driving unit.

[0012] Optionally, the bottom of the chute is provided with a through-hole for the first docking part to be inserted, and the top of the first docking part is connected with an anti-detachment structure. The orthographic projection of the anti-detachment structure on the top of the converging chute is larger than the orthographic projection of the through-hole on the top of the converging chute.

[0013] Optionally, the edge-pressing ring with adjustable edge film uniformity may further include a gas detection element and a control module; The gas detection device, the radial drive unit, the fine-tuning drive unit, the circumferential drive unit, the first drive unit, and the second drive unit are all connected to the control module. The control module controls the radial drive unit, the fine-tuning drive unit, the circumferential drive unit, the first drive unit, and the second drive unit based on the circumferential airflow field information of the area directly above the wafer collected by the gas detection device, so as to achieve dynamic balance adjustment of the circumferential airflow field in the area directly above the wafer.

[0014] To achieve the above objectives, the present invention also provides a semiconductor processing apparatus, including a support stage, an edge ring, and the aforementioned edge-pressing ring with adjustable edge film uniformity; the edge-pressing ring body within the edge ring with adjustable edge film uniformity is disposed on top of the edge ring surrounding the outer periphery of the support stage, and the edge-pressing ring body blocks at least a portion of the top edge annular region of the wafer placed on the support stage, and blocks the vent hole formed between the edge ring and the wafer.

[0015] The beneficial effects of this invention are as follows: This invention utilizes an annular converging groove recessed at the bottom of the edge ring body and connected to the vent hole to concentrate and gather the gas discharged from the vent hole. The gas is then discharged through a first guide hole arranged circumferentially at intervals, tilted upwards, and with its outlet facing away from the area directly above the wafer. This completely avoids the problem in existing structures where exhaust gas discharged through the gap between the edge ring and the wafer directly hits the reaction area above the wafer and interferes with the local airflow field. This effectively improves the uniformity of the reaction gas distribution in the wafer edge area and solves the problem of poor edge film deposition thickness and quality consistency caused by existing edge rings. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the combined structure of the pressure ring body, gap, vent hole, edge ring and bearing platform in the prior art; Figure 2 This is a schematic diagram of the combined structure of the pressure ring body, gap, vent hole, edge ring and bearing platform in some embodiments of the present invention; Figure 3 This is a schematic diagram of the structure of the pressure ring body, the converging groove, and the first guide hole in some embodiments of the present invention; Figure 4 for Figure 2 An enlarged schematic diagram of the structure at position A in the diagram shown; Figure 5 for Figure 4 An enlarged schematic diagram of the structure at position B in the structure shown.

[0017] Figures 2 to 5 The reference numerals in the attached figures are as follows: 1. Support platform; 2. Vent hole; 3. Edge ring; 4. Edge ring body; 5. Wafer; 6. Gathering groove; 7. First guide hole; 8. Shielding and shifting component; 81. Shielding and shifting component; 811. First shielding part; 812. Adjustment hole; 813. Shifting part; 814. Second guide hole; 815. First connecting part; 816. Radial driving part; 817. Elastic sealing part; 818. Receiving cavity; 819. Second shielding part; 820. Second connecting part; 821. Fine-tuning driving part; 82. Circumferential driving component; 822. First docking part; 823. First driving part; 824. Second driving part; 825. Second docking part. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0019] This invention relates to an edge-pressing ring and semiconductor processing equipment with adjustable edge film uniformity. The purpose is to gather the gas discharged from the exhaust port into the converging groove and guide it to the area away from the top of the wafer through the first guide hole. This avoids the problem in the existing structure where the exhaust gas is discharged through the gap between the edge-pressing ring and the wafer and directly rushes into the reaction area above the wafer, interfering with the local airflow field.

[0020] In response to the problems existing in the current technology (such as Figure 1 As shown in the embodiments, embodiments of the present invention provide an edge-pressing ring with adjustable edge film uniformity, such as... Figure 2 As shown, the edge-pressing ring with adjustable edge film uniformity includes an edge-pressing ring body 4.

[0021] In some embodiments, such as Figure 2 As shown, the pressure ring body 4 surrounds the top of the edge ring 3 on the outer periphery of the support platform 1, and the pressure ring body 4 blocks at least a portion of the annular area of ​​the top edge of the wafer 5 placed on the support platform 1, as well as blocking the vent hole 2 formed between the edge ring 3 and the wafer 5. It is worth noting that the cavity of the vent hole 2 is also an annular structure surrounding the support platform 1.

[0022] In some embodiments, such as Figure 2As shown, the pressure ring body 4 has a converging groove 6 that communicates with the exhaust hole 2, recessed from the bottom to the top. The converging groove 6 is annular and extends circumferentially along the pressure ring body 4 to gather the gas discharged from the exhaust hole 2. This configuration reconstructs the exhaust channel, which originally only existed in the narrow gap between the pressure ring body 4 and the wafer 5, into an annular expansion cavity located at the bottom of the pressure ring body 4. This significantly increases the buffer storage space for exhaust gas, greatly reduces the gas flow rate and local static pressure in this area, and allows the gas discharged from the exhaust hole 2 to diffuse smoothly and be temporarily stored in the converging groove 6.

[0023] In some embodiments, such as Figure 2 and Figure 3 As shown, the pressing ring body 4 is provided with a plurality of first guide holes 7 arranged at intervals along the circumference, preferably at equal intervals. The first guide holes 7 penetrate the pressing ring body 4 and communicate with the converging groove 6, and the first guide holes 7 extend obliquely from bottom to top (in Figure 2 In the embodiment, it can be understood that the gas outlet (which can be understood as the opening located on the top of the pressure ring body 4) is set towards the area directly above the wafer 5 away from the wafer 5, so as to export the gas in the collection groove 6 in a direction away from the area directly above the wafer 5.

[0024] By using a number of circumferentially spaced first guide holes 7, a multi-point, uniform exhaust flow path can be formed around the edge ring body 4, avoiding the problem of excessive local flow velocity and airflow imbalance caused by a single first guide hole 7. With the first guide holes 7 extending obliquely from bottom to top and their outlets facing the area directly above the wafer 5, the slope guides the forced change of the gas movement trajectory, ensuring that the gas gathered in the collecting groove 6 is completely discharged along the direction away from the reaction area above the wafer 5, cutting off the direct interference of the exhaust gas flow to the reaction gas field directly above the wafer 5. At the same time, the discharged gas can directly enter the non-reaction area on the outer periphery of the wafer 5, avoiding secondary mixing with the edge airflow around the wafer 5. Ultimately, this ensures a uniform and stable distribution of reaction gas above the wafer 5, especially in the edge area, significantly improving the thickness consistency and quality reliability of the edge film.

[0025] In some embodiments, such as Figure 2 and Figure 4 As shown, the converging slot 6 is provided with a shielding and shifting component 8, which includes a circumferential driving component 82 and at least one shielding and shifting component 81. When there are two shielding and shifting components 81, the two shielding and shifting components 81 are symmetrically arranged about the central axis of the wafer 5. When there are three or more shielding and shifting components 81, the plurality of shielding and shifting components 81 are arranged in an equally spaced ring.

[0026] In some embodiments, such as Figure 2and Figure 4 As shown, the shielding displacement member 81 is movably disposed within the converging groove 6. The circumferential driving member 82 is connected to the shielding displacement member 81 to drive the shielding displacement member 81 to move circumferentially within the converging groove 6. This dynamically adjusts the circumferential position of the shielding displacement member 81 according to the circumferential airflow field distribution in the area directly above the wafer 5, thereby shielding the air inlet end of the first guide hole 7 located at that circumferential position (which can be understood as the opening of the first guide hole 7 located at the top of the converging groove 6), and achieving dynamic balance adjustment of the circumferential airflow field in the area directly above the wafer 5.

[0027] This configuration, through the controllable circumferential displacement of the blocking and shifting component 81 within the converging groove 6, achieves on-demand dynamic allocation of the exhaust path: when the airflow field in a certain circumferential region directly above the wafer 5 is detected to be too strong or too weak, the circumferential driving component 82 can drive the blocking and shifting component 81 to move to the corresponding position, directly blocking the air inlet end of the first guide hole 7 at that location, locally blocking or reducing the exhaust flow in that region, thereby adjusting the airflow field intensity in the corresponding direction around the wafer 5 in the opposite direction. It can reduce the suction disturbance to the reaction zone by reducing exhaust diversion when the local airflow is too strong, and can also enhance the regional airflow supply by releasing the exhaust channel when the local airflow is weak. It can adaptively match the real-time airflow distribution state during the wafer 5 processing without stopping the machine, effectively eliminating the edge film thickness deviation caused by uneven circumferential airflow.

[0028] In some embodiments, the shielding displacement member 81 can shield a portion of the air inlet end of the first guide hole 7 or shield the entire portion. This allows for flexible selection of the shielding method based on the degree of deviation of the circumferential airflow field directly above the wafer 5: when the airflow field is slightly unbalanced locally, only a local area of ​​the air inlet end of the first guide hole 7 needs to be shielded. By reducing the ventilation cross-section, the exhaust intensity at the corresponding position is moderately weakened, thereby achieving fine-tuning and correction of the airflow field and avoiding new airflow disturbances caused by excessive shielding; when the airflow in a certain area deviates significantly from the equilibrium threshold, the air inlet end of the corresponding first guide hole 7 is directly and completely blocked, cutting off the exhaust diversion of that path and quickly leveling out the circumferential airflow difference.

[0029] In some embodiments, such as Figure 4 As shown, the blocking and shifting member 81 includes a first blocking part 811, which is connected to the circumferential driving member 82, and the first blocking part 811 is located at the top of the converging groove 6 (in... Figure 4 In the embodiment, it can be understood that the orthographic projection structure of the top wall of the converging groove 6 covers the air inlet end of at least one of the first guide holes 7, so that when the first shielding part 811 rotates circumferentially to the target position, it can effectively shield at least one of the first guide holes 7.

[0030] This configuration, by limiting the coverage area of ​​the first blocking part 811 projected onto the top of the converging groove 6, ensures that each first blocking part 811 on the circumferential workstation can completely or partially cover the air inlet end of at least one first guide hole 7. Thus, regardless of where the blocking displacement member 81 rotates with the circumferential drive member 82 to, it can block the air inlet end of the corresponding first guide hole 7, avoiding airflow regulation failures caused by blind spots or localized air leakage.

[0031] It should be noted that the first shielding part 811 covering at least one air inlet end of the first guide hole 7 in the orthographic projection structure at the top of the converging groove 6 means that the width of the first shielding part 811 in the radial direction is greater than the diameter of the air inlet end; and the first shielding part 811 covering at least one air inlet end of the first guide hole 7 in the circumferential direction.

[0032] In some embodiments, the first shielding part 811 can be a fan-shaped plate structure with an arc that matches the circumferential spacing of the first guide holes 7. When the circumferential driving member 82 drives the first shielding part 811 to rotate, the air inlet end of the corresponding first guide hole 7 is completely covered by the solid plate surface. This solid plate structure is not only simple in structure and low in processing cost, but also can completely block gas leakage compared to hollow or flexible shielding structures.

[0033] In some embodiments, such as Figure 4 As shown, the blocking and shifting member 81 also includes a shifting part 813, a first connecting part 815, and a radial driving part 816.

[0034] In some embodiments, such as Figure 4 As shown, an adjustment hole 812 is axially provided through the first blocking part 811, and the displacement part 813 is radially movably disposed within the adjustment hole 812. At least one second guide hole 814 is obliquely provided through the displacement part 813, connecting the first guide hole 7 and the exhaust hole 2. The central axis of the cavity of the second guide hole 814 is parallel to the central axis of the cavity of the first guide hole 7. The displacement part 813 can be a columnar or prismatic block that is radially adapted to slide with the adjustment hole 812.

[0035] It is worth noting that the shifting part 813 may also be provided with two, three or more of the first guide holes 7, and arranged at equal intervals along the circumference.

[0036] In some embodiments, such as Figure 4As shown, the radial drive part 816 is fixed to the outer wall of the first shielding part 811; the first connecting part 815 (the first connecting part 815 can be understood as a columnar rod structure) moves radially through the first shielding part 811 and extends into the adjusting hole 812 to connect with the shifting part 813. The radial drive part 816 (e.g., a cylinder) is connected to the shifting part 813 through the first connecting part 815 to drive the shifting part 813 to move the second guide hole 814 on it radially, thereby adjusting the radial distance between the gas conduction channel formed by the second guide hole 814 and the first guide hole 7 and the wafer 5.

[0037] In this embodiment, the radial drive unit 816 is positioned outside the outer wall of the first shielding unit 811, which avoids the narrow fluid space inside the adjustment hole 812 and prevents interference between the radial drive unit 816 and the displacement unit 813 during movement. At the same time, the radial drive force is directly transmitted to the displacement unit 813 inside the adjustment hole 812 through the first connecting part 815. The transmission path is short and the response speed is fast, which can accurately control the radial movement of the second guide hole 814, thereby dynamically adjusting the radial distance between the gas conduction channel and the edge of the wafer 5.

[0038] When the radial spacing increases, the suction effect of the exhaust airflow on the edge of wafer 5 weakens, which is suitable for scenarios where the edge film layer is relatively thin; when the radial spacing decreases, the suction effect of the exhaust airflow on the edge of wafer 5 strengthens, which is suitable for scenarios where the edge film layer is relatively thick. This allows for fine compensation of the airflow field at different radial positions of wafer 5 without changing the circumferential shading layout, further expanding the adjustment range of edge film uniformity.

[0039] In some embodiments, such as Figure 4 As shown, the blocking and shifting component 81 further includes an elastic sealing part 817, which includes a first sub-sealing part and a second sub-sealing part: the first sub-sealing part is disposed near the air inlet end of the adjusting hole 812, the inner ring wall of the first sub-sealing part is fixedly connected to the outer wall of the shifting part 813, and its outer ring wall is fixedly connected to the inner wall of the adjusting hole 812; the second sub-sealing part is disposed near the air outlet end of the adjusting hole 812, the inner ring wall of the second sub-sealing part is fixedly connected to the outer wall of the shifting part 813, and its outer ring wall is fixedly connected to the inner wall of the adjusting hole 812.

[0040] By setting a first sub-blocking part and a second sub-blocking part at the air inlet and outlet of the regulating hole 812 respectively, a double axial sealing barrier is formed for the annular gap between the outer wall of the displacement part 813 and the inner wall of the regulating hole 812, structurally blocking the upward leakage path of gas along this gap: the first sub-blocking part is located at the lower part of the regulating hole 812, directly intercepting the gas that enters the collecting groove 6 from the exhaust hole 2 and attempts to rush upward into the annular gap between the outer wall of the displacement part 813 and the inner wall of the regulating hole 812; the second sub-blocking part is located at the upper part of the regulating hole 812, preventing the gas returning from the first guide hole 7 from entering the annular gap between the outer wall of the displacement part 813 and the inner wall of the regulating hole 812. This ensures that the gas flow rate in the collecting groove 6 is strictly constrained within the preset guiding path, that is, it can only be discharged through the gas guiding channel formed by the first guide hole 7 and the second guide hole 814, avoiding uncontrolled airflow diversion caused by gap leakage.

[0041] In some embodiments, the structure of the first sub-blocking part and the second sub-blocking part can be an elastic sealing ring.

[0042] In some embodiments, such as Figure 4 As shown, the blocking and shifting member 81 also includes a second blocking part 819, a second connecting part 820, and a fine-tuning drive part 821.

[0043] In some embodiments, such as Figure 4 As shown, the shifting part 813 is provided with a receiving cavity 818 communicating with the second guide hole 814 in the radial direction, and the second blocking part 819 is movably disposed in the receiving cavity 818; the fine-tuning drive part 821 is fixed to the outer side wall of the shifting part 813; the second connecting part 820 is movably inserted through the shifting part 813 in the radial direction and extends into the receiving cavity 818 and is connected to the second blocking part 819, and the fine-tuning drive part 821 is connected to the second blocking part 819 through the second connecting part 820 to drive the second blocking part 819 to move radially, thereby adjusting the flow cross-sectional area of ​​the second guide hole 814.

[0044] This embodiment establishes a third level of fine adjustment for exhaust flow by integrating a radially adjustable second shielding part 819 inside the shifting part 813: the fine-tuning drive part 821 (e.g., a cylinder) is externally positioned on the outer wall of the shifting part 813, avoiding intrusion into the second guide hole 814 that could cause flow field disturbance, and facilitating wiring maintenance and heat dissipation; simultaneously, the driving force is directly transmitted to the second shielding part 819 within the receiving cavity 818 via the second connecting part 820, resulting in direct transmission and sensitive response, allowing precise control of the radial displacement of the second shielding part 819 within the receiving cavity 818. When it is necessary to reduce the exhaust intensity in a certain area, the second shielding part 819 is driven to move inward into the second guide hole 814, reducing the flow area of ​​the gas conduction channel formed by the connection between the second guide hole 814 and the first guide hole 7, thereby reducing the exhaust flow in that path; when it is necessary to enhance exhaust, the second shielding part 819 is driven to move outward from the second guide hole 814, expanding the flow area of ​​the aforementioned gas conduction channel, improving exhaust efficiency, and achieving stepless fine-tuning of the exhaust volume.

[0045] In some embodiments, the cavity structure of the receiving cavity 818 can be a rectangular groove or an arc-shaped groove that is radially through the displacement portion 813. The groove depth of the receiving cavity 818 is perpendicular to the axial direction, and its groove width is greater than or equal to the diameter of the second guide hole 814, so as to ensure that the second shielding portion 819 can completely cover the flow section of the second guide hole 814 after it extends into the second guide hole 814. The structure of the second shielding portion 819 is correspondingly configured as a rectangular plate or a fan-shaped slider that slides with the receiving cavity 818. Its thickness is slightly smaller than the groove width of the receiving cavity 818, and its side facing the second guide hole 814 can be configured as an arc surface so as to form a line contact or surface contact seal with the hole wall of the second guide hole 814 when shielding.

[0046] In some embodiments, such as Figure 5 As shown, the circumferential driving member 82 includes a first docking part 822 and a second docking part 825; the first docking part 822 (which can be understood as a slider) is connected to the first blocking part 811, and the second docking part 825 has a ring-shaped structure (which can be understood as a docking ring) and is fixedly disposed on the top of the converging groove 6 in the circumferential direction. The second docking part 825 has a groove extending in the circumferential direction recessed from the bottom to the top. The first docking part 822 is movably inserted into the groove so as to adjust the circumferential position of the first blocking part 811 in the converging groove 6 by the circumferential movement of the first docking part 822 in the groove.

[0047] By designing the second docking part 825 as an annular structure fixed circumferentially along the top of the converging groove 6, and opening a circumferentially extending sliding groove inside it, a stable circumferential motion track is provided for the first blocking part 811. This ensures that the circumferential sliding of the first docking part 822 (slider) within the sliding groove is always limited to a preset annular path, preventing radial offset or axial warping of the first blocking part 811 during movement, thus ensuring the accuracy and reliability of the blocking position adjustment. Simultaneously, the annular second docking part 825 is highly compatible with the annular converging groove 6 structure, eliminating the need for additional complex guiding mechanisms and simplifying the process. The overall structural layout is optimized, and the sliding groove is hidden inside the second docking part 825, avoiding direct contact with the exhaust airflow in the converging groove 6, reducing the contamination and wear of the sliding interface by airflow impurities, and extending the service life of the drive components; in addition, the rigid connection between the first docking part 822 and the first shielding part 811 allows the circumferential driving force to be directly transmitted to the first shielding part 811, with a short transmission chain and fast response, which can accurately control the circumferential positioning angle of the first shielding part 811, realize the rapid and accurate shielding of the air intake end of the first guide hole 7, and effectively improve the efficiency and stability of circumferential airflow field adjustment.

[0048] In some embodiments, such as Figure 5 As shown, the circumferential driving component 82 further includes a first driving part 823 (which can be understood as a magnet) and a plurality of second driving parts 824 (which can be understood as electromagnets); the first driving part 823 is disposed on the top of the first docking part 822; the plurality of second driving parts 824 are circumferentially spaced on the top of the groove; the first driving part 823 and the plurality of second driving parts 824 are respectively connected to an independent power supply, and the first driving part 823 is attracted to move the first blocking part 811 circumferentially by controlling the power on and off of each second driving part 824.

[0049] This embodiment adopts a step-by-step electromagnetic adsorption drive architecture, eliminating the complex mechanical transmission structure of traditional motors, gears, and racks, greatly simplifying the size and complexity of the drive system and adapting to the narrow space constraints of the converging slot 6. By using multiple second drive units 824 arranged at intervals along the circumference as "stepping anchor points", in conjunction with the selective adsorption action of the first drive unit 823, the first shielding unit 811 can achieve discrete and precise positioning within a 360° range. The on / off state of each second drive unit 824 directly corresponds to a circumferential workstation. The control logic is simple and reliable, with fast response speed and no cumulative error. At the same time, electromagnetic drive is a non-contact transmission, eliminating mechanical friction loss and transmission gaps. This avoids the accuracy decay and jamming problems that occur in traditional mechanical drives after long-term reciprocating motion, significantly improving the operational stability and service life of the shielding displacement component 81 in the plasma corrosion environment. Furthermore, the independent power supply design of each drive unit enhances the redundancy and fault tolerance of the system. Even if individual drive units fail, the remaining units can still maintain basic circumferential adjustment functions.

[0050] In some embodiments, such as Figure 5 As shown, the bottom of the chute is provided with a through-hole for the first docking part 822 to be inserted, and the top of the first docking part 822 is connected with an anti-detachment structure (which can be understood as a disc-shaped anti-detachment plate); the orthographic projection of the anti-detachment structure on the top of the converging groove 6 is larger than the orthographic projection of the through-hole on the top of the converging groove 6.

[0051] This embodiment provides a through-hole at the bottom of the chute for the insertion of the first docking part 822, and confines the anti-detachment structure fixedly connected to the first docking part 822 within the chute, forming an axial mechanical confinement structure for the first shielding part 811. Utilizing the combined action of the contact surface between the bottom of the anti-detachment structure and the bottom of the chute (preferably, the friction between the anti-detachment structure and the chute is negligible) and the weight of the first docking part 822 and its connecting structure, it directly resists the axial lift force generated by the upward impact of the exhaust gas flow, preventing the anti-detachment structure from floating upwards or detaching from the chute under gas pressure, thus ensuring the first shielding part 811 is securely positioned. During circumferential movement, part 811 maintains a stable fit with the top of the converging groove 6, preventing positional shifts or airflow leakage caused by axial clearance. Meanwhile, the stepped structure of the chute and the through-hole forms a "wide at the top and narrow at the bottom" limiting space, which allows the first docking part 822 to slide freely within the chute while structurally blocking the first docking part 822 from detaching. No additional fasteners or complex locking mechanisms are required. While ensuring circumferential drive stability, this further simplifies the assembly process and improves the anti-interference capability and long-term reliability of the blocking and shifting part 81 during dynamic adjustment.

[0052] In some embodiments, the edge-pressing ring with adjustable edge film uniformity further includes a gas detection element and a control module; the gas detection element, the radial drive unit 816, the fine-tuning drive unit 821, the circumferential drive unit 82, the first drive unit 823, and the second drive unit 824 are all connected to the control module. The control module controls the radial drive unit 816, the fine-tuning drive unit 821, the circumferential drive unit 82, the first drive unit 823, and the second drive unit 824 based on the circumferential airflow field information collected by the gas detection element in the area directly above the wafer 5, so as to achieve dynamic equalization adjustment of the circumferential airflow field in the area directly above the wafer 5.

[0053] This setup constructs a fully closed-loop intelligent control system encompassing "perception, decision-making, and execution." The gas detection device collects real-time data on the circumferential airflow distribution above wafer 5 and feeds it back to the control module. The control module automatically compares this data with a preset uniformity threshold and accurately calculates the optimal action combination of the circumferential drive unit 82, the radial drive unit 816, and the fine-tuning drive unit 821. This allows for the synchronous and coordinated operation of multiple adjustment mechanisms without manual intervention. The circumferential drive unit 82 can quickly locate abnormal airflow locations, while the radial drive unit 816 can be linked to adjust the radial distance between the exhaust channel and wafer 5. Furthermore, the fine-tuning drive unit 821 can perform stepless calibration of the exhaust flow rate at a single point, achieving multi-dimensional and high-precision dynamic compensation for the circumferential airflow field. This automated closed-loop control not only eliminates the subjectivity and lag of manual adjustment, significantly improving the stability and repeatability of edge film uniformity, but also adapts to changes in the airflow field under different process formulations and wafer 5 specifications, effectively broadening the process window and significantly reducing reliance on operator experience and the time cost of process debugging.

[0054] In some embodiments, such as Figure 5 As shown, the first drive unit 823 is located on the top of the anti-detachment structure.

[0055] In some embodiments, the gas detection element can be a non-contact multi-point array laser Doppler velocimeter or a miniature hot-film anemometer, arranged at equal angular intervals along the circumference of the pressure ring body 4 in the area directly above the wafer 5. This arrangement can acquire the airflow velocity vector and turbulence intensity distribution at different positions on the surface of the wafer 5 in real time and accurately without interfering with the flow field inside the reaction chamber. Its detection resolution is sufficient to capture minute differences in circumferential airflow, thereby providing the control module with high-fidelity airflow field feedback data, supporting the shielding displacement component 8 to make precise dynamic adjustment actions, and ensuring that the control accuracy of edge film uniformity meets the requirements of advanced processes.

[0056] In some embodiments, the control module may be a programmable logic controller (PLC) or an embedded microprocessor that integrates a fuzzy PID algorithm or a neural network learning algorithm, and has a built-in airflow field reference model corresponding to different process formulations (such as temperature, pressure, and gas flow rate).

[0057] To address the problems existing in the prior art, embodiments of the present invention also provide a semiconductor processing apparatus, such as... Figure 2 As shown, the semiconductor processing equipment includes a support stage 1, an edge ring 3, and a pressure ring for adjusting edge film uniformity; the pressure ring body 4 inside the pressure ring for adjusting edge film uniformity is disposed on top of the edge ring 3 surrounding the outer periphery of the support stage 1, and the pressure ring body 4 blocks at least a portion of the top edge annular region of the wafer 5 placed on the support stage 1, and blocks the vent hole 2 formed between the edge ring 3 and the wafer 5.

[0058] In some embodiments, the semiconductor processing equipment can be core equipment for wafer 5 processing, such as chemical vapor deposition equipment, physical vapor deposition equipment, atomic layer deposition equipment, plasma etching equipment, or ashing and resist removal equipment. These devices all have extremely high requirements for the flow field stability and film formation / etching uniformity in the edge region of the wafer 5 within the reaction chamber during the process. By integrating the aforementioned edge-forming uniformity-adjustable pressure ring into the assembly system of the support platform 1 and edge ring 3 of such equipment, the original control interface and gas path system of the equipment can be directly reused. Without large-scale modification of the main structure of the equipment, the converging groove 6 and multi-directional adjustable exhaust structure of the pressure ring can be used to specifically solve the industry pain points such as edge airflow disturbance, uneven film thickness, or inconsistent etching rate that are common in existing equipment. This effectively improves the yield and process window of the wafer 5 edge in various semiconductor processes, and is especially suitable for the upgrade and transformation of advanced process production lines with stringent edge uniformity requirements.

[0059] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A pressure ring with adjustable edge film uniformity, characterized in that, include: The pressure ring body is located on top of the edge ring surrounding the outer periphery of the support platform, and the pressure ring body covers at least a portion of the top edge annular region of the wafer placed on the support platform, as well as the vent hole formed between the edge ring and the wafer. The pressure ring body has a converging groove that communicates with the exhaust hole from bottom to top. The converging groove is annular and extends along the circumference of the pressure ring body to gather the gas discharged from the exhaust hole. The pressing ring body is provided with a plurality of first guide holes arranged at intervals along the circumference. The first guide holes penetrate the pressing ring body and are connected to the converging groove. The first guide holes extend obliquely from bottom to top and their outlet ends are set towards the area directly above the wafer away from the wafer. The converging slot is provided with a shielding and shifting component, which includes at least one shielding and shifting element; The shielding and shifting component includes a first shielding part, a shifting part, a first connecting part, and a radial driving part. An adjustment hole is axially provided on the first shielding part. The shifting part is radially movably disposed in the adjustment hole. At least one second guide hole is obliquely provided on the shifting part, connecting the first guide hole and the exhaust hole. The central axis of the cavity of the second guide hole is parallel to the central axis of the cavity of the first guide hole. The radial drive unit is fixed to the outer wall of the first shielding unit; The first connecting part moves radially through the first blocking part and extends into the adjusting hole to connect with the shifting part. The radial driving part is connected to the shifting part through the first connecting part to drive the shifting part to move the second guiding hole on it radially, thereby adjusting the radial distance between the gas conduction channel formed by the communication between the second guiding hole and the first guiding hole and the wafer.

2. The edge-pressing ring with adjustable edge film uniformity according to claim 1, characterized in that, The blocking and displacement component also includes a circumferential driving component; The shielding and shifting component is movably disposed within the converging groove. The circumferential driving component is connected to the shielding and shifting component to drive the shielding and shifting component to perform circumferential movement within the converging groove. This dynamically adjusts the circumferential position of the shielding and shifting component according to the circumferential airflow field distribution in the area directly above the wafer, thereby shielding the air inlet end of the first guide hole located at that circumferential position and achieving dynamic balance adjustment of the circumferential airflow field in the area directly above the wafer.

3. The edge-pressing ring with adjustable edge film uniformity according to claim 2, characterized in that, The first shielding part is connected to the circumferential drive member, and the orthographic projection structure of the first shielding part on the top of the converging groove covers the air inlet end of at least one of the first guide holes, so that when the first shielding part is circumferentially rotated to the target position, it can effectively shield at least one of the first guide holes.

4. The edge-pressing ring with adjustable edge film uniformity according to claim 2, characterized in that, The blocking and displacing component further includes an elastic sealing part, which comprises a first sub-sealing part and a second sub-sealing part: The first sub-blocking part is disposed near the air inlet end of the adjusting hole, the inner ring wall of the first sub-blocking part is fixedly connected to the outer ring wall of the shifting part, and its outer ring wall is fixedly connected to the inner ring wall of the adjusting hole. The second sub-blocking part is located near the air outlet end of the adjusting hole. The inner ring wall of the second sub-blocking part is fixedly connected to the outer ring wall of the shifting part, and its outer ring wall is fixedly connected to the inner ring wall of the adjusting hole.

5. The edge-pressing ring with adjustable edge film uniformity according to claim 4, characterized in that, The blocking and shifting component also includes a second blocking part, a second connecting part, and a fine-tuning drive part; The displacement part is provided with a receiving cavity communicating with the second guide hole in the radial direction, and the second shielding part is movably disposed in the receiving cavity; The fine-tuning drive unit is fixed to the outer wall of the displacement unit; The second connecting part moves radially through the displacement part and extends into the receiving cavity to connect with the second blocking part. The fine-tuning drive part is connected to the second blocking part through the second connecting part to drive the second blocking part to move radially, thereby adjusting the flow cross-sectional area of ​​the second guide hole.

6. The edge-pressing ring with adjustable edge film uniformity according to claim 5, characterized in that, The circumferential drive component includes a first docking portion and a second docking portion; The first docking part is connected to the first shielding part. The second docking part has an annular structure and is fixedly disposed on the top of the converging groove in the circumferential direction. The second docking part has a groove extending in the circumferential direction recessed from the bottom to the top. The first docking part is movably inserted into the groove so that the circumferential position of the first shielding part in the converging groove can be adjusted by the circumferential movement of the first docking part in the groove.

7. The edge-pressing ring with adjustable edge film uniformity according to claim 6, characterized in that, The circumferential drive component further includes a first drive unit and several second drive units; The first driving part is located at the top of the first docking part; Several second driving units are spaced circumferentially at the top of the slide groove; the first driving unit and several second driving units are respectively connected to an independent power supply, and the first driving unit is attracted to move the first blocking part circumferentially by controlling the power on and off of each second driving unit.

8. The edge-pressing ring with adjustable edge film uniformity according to claim 6, characterized in that, The bottom of the chute is provided with a through-hole for the first docking part to be inserted, and the top of the first docking part is connected with an anti-detachment structure. The orthographic projection of the anti-detachment structure on the top of the converging chute is larger than the orthographic projection of the through-hole on the top of the converging chute.

9. The edge-pressing ring with adjustable edge film uniformity according to claim 7, characterized in that, It also includes gas detection components and a control module; The gas detection device, the radial drive unit, the fine-tuning drive unit, the circumferential drive unit, the first drive unit, and the second drive unit are all connected to the control module. The control module controls the radial drive unit, the fine-tuning drive unit, the circumferential drive unit, the first drive unit, and the second drive unit based on the circumferential airflow field information of the area directly above the wafer collected by the gas detection device, so as to achieve dynamic balance adjustment of the circumferential airflow field in the area directly above the wafer.

10. A semiconductor processing apparatus, characterized in that, The device includes a support platform, an edge ring, and a pressure ring with adjustable edge film uniformity as described in any one of claims 1 to 9. The pressure ring body within the pressure ring with adjustable edge film uniformity is disposed on top of the edge ring surrounding the outer periphery of the support platform, and the pressure ring body blocks at least a portion of the top edge annular region of the wafer placed on the support platform, and blocks the vent hole formed between the edge ring and the wafer.

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