A method of welding a semiconductor gas distribution plate
By applying pressure plates and elastic gaskets to both sides of the semiconductor gas distribution disk, combined with segmented welding and annealing, the problems of thermal stress and deformation during welding were solved, achieving high-precision welding results and ensuring the stability and accuracy of the gas distribution disk.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NINGBO JIANGFENGXINCHUANG TECH CO LTD
- Filing Date
- 2026-05-15
- Publication Date
- 2026-07-31
AI Technical Summary
Existing technologies make it difficult to minimize thermal stress and deformation while ensuring welding strength when welding semiconductor gas distribution disks, which affects the uniformity of gas distribution and the performance of semiconductor devices.
By applying pressure plates and elastic heat-resistant pads to both sides of the distribution plate, combined with segmented welding and annealing, the deformation pressure during the welding process is controlled, and the weld stress is reduced by dispersing high-energy stress concentration.
Effectively control welding deformation, ensure welding strength and dimensional accuracy of the gas distribution plate, and improve welding quality and gas distribution stability.
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Figure SMS_1
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor technology, and specifically relates to a welding method for a semiconductor gas distribution disk. Background Technology
[0002] Semiconductor gas distribution disks are one of the key components commonly used in semiconductor manufacturing processes. Their main function is to uniformly distribute gases into semiconductor processing equipment to ensure that reaction gases or gas mixtures can be accurately delivered to the required locations during wafer processing, cleaning, deposition, and other processes, thereby achieving precise process control.
[0003] In semiconductor manufacturing, gas distribution disks must withstand ultra-high vacuum environments and high-temperature thermal cycling. Their sealing performance directly affects the uniformity of thin film deposition on the wafer surface and the accuracy of etching linewidth control. Semiconductor gas distribution disks are typically assembled from multiple thin plates or precision components through welding. Welding, as the primary process for connecting thin plates and components, provides excellent strength, sealing, and airtightness, preventing leakage and other mechanical aging, and ensuring the stability and accuracy of gas distribution.
[0004] Gas distribution disks are typically welded using electron beam welding. CN114823271A discloses a welding method and a gas distribution disk for semiconductors. Pre-drilled slots are formed in both the base and the distribution plate of the gas distribution disk, creating a cavity between them. Solder is then filled into this cavity for welding, improving the welding yield, preventing material cracking, and enhancing product quality. During electron beam welding, high energy density is generated, easily leading to thermal stress and expansion, especially in thin plates. This results in significant deformation of the welded component; for example, the central portion of a thin plate is susceptible to concentrated welding energy, causing irregular deformation or bulges. However, semiconductor gas distribution disks require extremely high precision because they are closely related to the precision processes in semiconductor manufacturing. Any minute deformation or welding defect can lead to uneven gas distribution, thus affecting product quality and the performance of semiconductor devices.
[0005] Therefore, how to minimize thermal stress and deformation while ensuring welding strength has become one of the current technical challenges. Summary of the Invention
[0006] The purpose of this invention is to provide a welding method for a semiconductor gas distribution disk, which addresses the ultra-high precision requirements of the semiconductor gas distribution disk by controlling welding deformation while ensuring welding strength.
[0007] To achieve this objective, the present invention adopts the following technical solution:
[0008] This invention provides a method for welding a semiconductor gas distribution disk, the welding method comprising the following steps:
[0009] (1) Assemble the distribution plate of the semiconductor gas distribution disk with the base, set a gasket at the center of the surface of the distribution plate, cover the surface of the distribution plate with a first pressure plate, cover the bottom surface of the base with a second pressure plate, and apply pressure to the first pressure plate and the second pressure plate in opposite directions to the semiconductor gas distribution disk respectively;
[0010] (2) Under pressure, segmented electron beam welding is performed on the weld between the distribution plate and the base;
[0011] (3) After welding, the semiconductor gas distribution plate is annealed.
[0012] The welding method provided by this invention involves applying pressure plates to both sides of the distribution plate and combining them with elastic heat-resistant gaskets. The heat-resistant gaskets are in soft contact with the center of the distribution plate surface. During the welding process, the pressure plates apply controlled deformation pressure to the distribution plate, while the gaskets effectively disperse the high-energy stress concentration of electron beam welding. Furthermore, a segmented welding process is employed to reduce energy and stress concentration. After welding, annealing treatment is performed to effectively reduce weld stress during pressure welding, improve weld strength, and suppress deformation problems.
[0013] Preferably, the area of the gasket accounts for 30-40% of the area of the distribution plate, for example, it can be 30%, 32%, 34%, 35%, 36%, 38% or 40%, but is not limited to the listed values. Other unlisted values within the range are also applicable.
[0014] Preferably, the thickness of the gasket is 0.3-1mm, for example, it can be 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm or 1mm, but is not limited to the listed values. Other unlisted values within the range are also applicable.
[0015] Preferably, the gasket is made of heat-resistant tape.
[0016] Preferably, the area of the first pressure plate is greater than or equal to the surface area of the distribution plate.
[0017] Preferably, the area of the second pressure plate is greater than or equal to the bottom area of the base.
[0018] Preferably, the pressure of the first pressure plate relative to the second pressure plate is 0.05-0.2 MPa, for example, it can be 0.05 MPa, 0.08 MPa, 0.1 MPa, 0.12 MPa, 0.15 MPa, 0.18 MPa or 0.2 MPa, but is not limited to the listed values. Other unlisted values within the range are also applicable.
[0019] Preferably, the first pressure plate and the second pressure plate are connected and fixed by a spiral fastener to maintain a constant pressure.
[0020] In this invention, the first pressure plate, the second pressure plate, and the spiral fastener are made of high-strength steel, including but not limited to quenched stainless steel, to ensure that the high-energy heat-conducting workpiece does not deform during the welding process, thereby guaranteeing the pressure strength of the welding process.
[0021] Preferably, the segmented electron beam welding process includes: dividing the weld into segments of equal length, and then welding each segment sequentially.
[0022] Preferably, the number of segments is 4-8, for example, 4, 5, 6, 7 or 8 segments.
[0023] Preferably, the beam current for electron beam welding is 20-40mA, for example, it can be 20mA, 22mA, 25mA, 28mA, 30mA, 32mA, 35mA, 38mA or 40mA, but is not limited to the listed values. Other unlisted values within the range are also applicable.
[0024] Preferably, the linear speed of the electron beam welding is 10-20 mm / s, for example, it can be 10 mm / s, 12 mm / s, 14 mm / s, 15 mm / s, 16 mm / s, 18 mm / s or 20 mm / s, but is not limited to the listed values, and other unlisted values within the range are also applicable.
[0025] Preferably, the annealing temperature is 180-240℃, for example, it can be 180℃, 190℃, 200℃, 210℃, 220℃, 230℃ or 240℃, but is not limited to the listed values. Other unlisted values within the range are also applicable.
[0026] Preferably, the annealing time is 2-8 hours, for example, it can be 2 hours, 3 hours, 4 hours, 5 hours, 6 hours, 7 hours or 8 hours, but is not limited to the listed values. Other unlisted values within the range are also applicable.
[0027] As a preferred embodiment of the welding method provided by the present invention, the welding method includes the following steps:
[0028] (1) Assemble the distribution plate of the semiconductor gas distribution disk with the base. Place a heat-resistant tape with a thickness of 0.3-1mm at the center of the distribution plate surface. The area of the heat-resistant tape accounts for 30-40% of the area of the distribution plate. Then cover the distribution plate surface with a first pressure plate and the base bottom with a second pressure plate. The area of the first pressure plate is greater than or equal to the surface area of the distribution plate, and the area of the second pressure plate is greater than or equal to the bottom area of the base. Connect and fix the first pressure plate and the second pressure plate with spiral fasteners so that the first pressure plate and the second pressure plate apply constant relative pressure to the semiconductor gas distribution disk. The pressure of the first pressure plate relative to the second pressure plate is 0.05-0.2MPa.
[0029] (2) Under pressure, electron beam welding is performed on the weld between the distribution plate and the base. The electron beam welding process includes: dividing the weld into 4-8 segments of equal length, and then welding each segment in sequence. The beam current of the electron beam welding is 20-40mA and the linear velocity is 10-20mm / s.
[0030] (3) After welding, the semiconductor gas distribution plate is annealed at a temperature of 180-240℃ for 2-8 hours.
[0031] Compared with the prior art, the present invention has the following beneficial effects:
[0032] The welding method provided by this invention applies a pressure plate and an elastic gasket to apply deformation control pressure during the welding process, while effectively dispersing high-energy stress concentration. Combined with segmented welding and annealing processes, it effectively controls the welding deformation of the gas distribution plate, while ensuring welding strength and the dimensional accuracy of the gas distribution plate. Detailed Implementation
[0033] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention.
[0034] Example 1
[0035] This embodiment provides a method for welding a semiconductor gas distribution disk, the welding method comprising the following steps:
[0036] (1) Assemble the distribution plate of the semiconductor gas distribution disk with the base. Place a heat-resistant tape with a thickness of 0.5 mm at the center of the distribution plate surface. The area of the heat-resistant tape accounts for 35% of the area of the distribution plate. Then cover the distribution plate surface with a first pressure plate and cover the base bottom with a second pressure plate. The area of the first pressure plate is greater than or equal to the surface area of the distribution plate, and the area of the second pressure plate is greater than or equal to the bottom area of the base. Connect and fix the first pressure plate and the second pressure plate with spiral fasteners so that the first pressure plate and the second pressure plate apply constant relative pressure to the semiconductor gas distribution disk. The pressure of the first pressure plate relative to the second pressure plate is 0.1 MPa.
[0037] (2) Under pressure, the weld between the distribution plate and the base is divided into 6 segments of equal length, and each segment of the weld is subjected to electron beam welding in sequence. The beam current of the electron beam welding is 30mA and the linear velocity is 15mm / s.
[0038] (3) After welding, the semiconductor gas distribution plate is annealed at 200°C for 5 hours.
[0039] Example 2
[0040] This embodiment provides a method for welding a semiconductor gas distribution disk, the welding method comprising the following steps:
[0041] (1) Assemble the distribution plate of the semiconductor gas distribution disk with the base. Place a heat-resistant tape with a thickness of 1 mm at the center of the distribution plate surface. The area of the heat-resistant tape accounts for 30% of the area of the distribution plate. Then cover the distribution plate surface with a first pressure plate and cover the bottom of the base with a second pressure plate. The area of the first pressure plate is greater than or equal to the surface area of the distribution plate, and the area of the second pressure plate is greater than or equal to the bottom area of the base. Connect and fix the first pressure plate and the second pressure plate with spiral fasteners so that the first pressure plate and the second pressure plate apply constant relative pressure to the semiconductor gas distribution disk. The pressure of the first pressure plate relative to the second pressure plate is 0.2 MPa.
[0042] (2) Under pressure, the weld between the distribution plate and the base is divided into 4 segments of equal length, and each segment of the weld is subjected to electron beam welding in sequence. The beam current of the electron beam welding is 20mA and the linear velocity is 10mm / s.
[0043] (3) After welding, the semiconductor gas distribution plate is annealed at 240°C for 2 hours.
[0044] Example 3
[0045] This embodiment provides a method for welding a semiconductor gas distribution disk, the welding method comprising the following steps:
[0046] (1) Assemble the distribution plate of the semiconductor gas distribution disk with the base. Place a heat-resistant tape with a thickness of 0.3 mm at the center of the distribution plate surface. The area of the heat-resistant tape accounts for 40% of the area of the distribution plate. Then cover the distribution plate surface with a first pressure plate and cover the base bottom with a second pressure plate. The area of the first pressure plate is greater than or equal to the surface area of the distribution plate, and the area of the second pressure plate is greater than or equal to the bottom area of the base. Connect and fix the first pressure plate and the second pressure plate with spiral fasteners so that the first pressure plate and the second pressure plate apply constant relative pressure to the semiconductor gas distribution disk. The pressure of the first pressure plate relative to the second pressure plate is 0.05 MPa.
[0047] (2) Under pressure, the weld between the distribution plate and the base is divided into 8 segments of equal length, and each segment of the weld is subjected to electron beam welding in sequence. The beam current of the electron beam welding is 40mA and the linear velocity is 20mm / s.
[0048] (3) After welding, the semiconductor gas distribution plate is annealed at 180°C for 8 hours.
[0049] Example 4
[0050] This embodiment provides a welding method for a semiconductor gas distribution plate. Compared with embodiment 1, step (1) sets the area of the heat-resistant tape to account for 20% of the area of the distribution plate, and the rest are the same as in embodiment 1.
[0051] Example 5
[0052] This embodiment provides a welding method for a semiconductor gas distribution plate. Compared with embodiment 1, step (1) sets the pressure of the first pressure plate relative to the second pressure plate to 0.3 MPa, and the rest are the same as in embodiment 1.
[0053] Comparative Example 1
[0054] This comparative example provides a welding method for a semiconductor gas distribution disk. Compared with Example 1, the first pressure plate, the second pressure plate, and the heat-resistant tape in step (1) are not set, and the rest are the same as in Example 1.
[0055] Comparative Example 2
[0056] This comparative example provides a welding method for a semiconductor gas distribution disk. Compared with Example 1, the heat-resistant tape in step (1) is not used, and all other aspects are the same as in Example 1.
[0057] Comparative Example 3
[0058] This comparative example provides a welding method for a semiconductor gas distribution disk. Compared with Example 1, step (2) does not segment the weld, that is, the weld is directly welded in one piece. The rest is the same as Example 1.
[0059] Comparative Example 4
[0060] This comparative example provides a welding method for a semiconductor gas distribution disk. Compared with Example 1, the annealing step (3) is not performed, and the rest is the same as Example 1.
[0061] The surface flatness of the semiconductor gas distribution disks after welding provided in the embodiments and comparative examples was tested, and the results are listed in Table 1.
[0062] Table 1
[0063]
[0064] As shown in Table 1, the welding method of the present invention, through the application of pressure plates and elastic gaskets, can effectively disperse stress concentration during the welding process. Furthermore, by combining it with segmented welding and annealing processes, it effectively reduces the flatness value of the distribution plate surface, improves the flatness of the workpiece, and suppresses welding deformation. In contrast, in Comparative Examples 1-4, when any step is missing, the flatness value of the distribution plate increases significantly, and the deformation of the welded part increases. Further, compared to other embodiments, the flatness of the distribution discs in Examples 1-3 is superior. Compared to the results of Example 1, in Example 4, when the area ratio of the heat-resistant tape is too small, stress concentration during welding cannot be completely and effectively alleviated, leading to increased deformation. In Example 5, when the pressure applied during welding is too high, it can also easily cause excessive welding stress, affecting the deformation of the distribution disc.
[0065] In summary, the welding method provided by this invention, through the combination of pressure plate and elastic gasket, applies deformation control pressure during the welding process while effectively dispersing high-energy stress concentration. Combined with segmented welding and annealing processes, it effectively controls the welding deformation of the gas distribution plate, while ensuring welding strength and dimensional accuracy of the gas distribution plate.
[0066] The above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.
Claims
1. A method for welding a semiconductor gas distribution disk, characterized in that, The welding method includes the following steps: (1) Assemble the distribution plate of the semiconductor gas distribution disk with the base, set a gasket at the center of the surface of the distribution plate, cover the surface of the distribution plate with a first pressure plate, cover the bottom surface of the base with a second pressure plate, and apply pressure to the first pressure plate and the second pressure plate in opposite directions to the semiconductor gas distribution disk respectively; (2) Under pressure, segmented electron beam welding is performed on the weld between the distribution plate and the base; (3) After welding, the semiconductor gas distribution plate is annealed.
2. The welding method according to claim 1, characterized in that, The area of the gasket accounts for 30-40% of the area of the distribution plate.
3. The welding method according to claim 1 or 2, characterized in that, The thickness of the gasket is 0.3-1mm; Preferably, the gasket is made of heat-resistant tape.
4. The welding method according to any one of claims 1-3, characterized in that, The area of the first pressure plate is greater than or equal to the surface area of the distribution plate; Preferably, the area of the second pressure plate is greater than or equal to the bottom area of the base.
5. The welding method according to any one of claims 1-4, characterized in that, The pressure of the first pressure plate relative to the second pressure plate is 0.05-0.2 MPa.
6. The welding method according to claim 5, characterized in that, The first pressure plate and the second pressure plate are connected and fixed by a spiral fastener to maintain a constant pressure.
7. The welding method according to any one of claims 1-6, characterized in that, The segmented electron beam welding process includes: dividing the weld into segments of equal length, and then welding each segment sequentially; Preferably, the number of segments is 4-8.
8. The welding method according to any one of claims 1-7, characterized in that, The electron beam welding current is 20-40mA; Preferably, the linear speed of the electron beam welding is 10-20 mm / s.
9. The welding method according to any one of claims 1-8, characterized in that, The annealing temperature is 180-240℃; Preferably, the annealing process takes 2-8 hours.
10. The welding method according to any one of claims 1-9, characterized in that, The welding method includes the following steps: (1) Assemble the distribution plate of the semiconductor gas distribution disk with the base. Place a heat-resistant tape with a thickness of 0.3-1mm at the center of the distribution plate surface. The area of the heat-resistant tape accounts for 30-40% of the area of the distribution plate. Then cover the distribution plate surface with a first pressure plate and the base bottom with a second pressure plate. The area of the first pressure plate is greater than or equal to the surface area of the distribution plate, and the area of the second pressure plate is greater than or equal to the bottom area of the base. Connect and fix the first pressure plate and the second pressure plate with spiral fasteners so that the first pressure plate and the second pressure plate apply constant relative pressure to the semiconductor gas distribution disk. The pressure of the first pressure plate relative to the second pressure plate is 0.05-0.2MPa. (2) Under pressure, electron beam welding is performed on the weld between the distribution plate and the base. The electron beam welding process includes: dividing the weld into 4-8 segments of equal length, and then welding each segment in sequence. The beam current of the electron beam welding is 20-40mA and the linear velocity is 10-20mm / s. (3) After welding, the semiconductor gas distribution plate is annealed at a temperature of 180-240℃ for 2-8 hours.