Phosphamide complexes as deposition precursors for thin layers

Abstract

A composition for forming a layer on a semiconductor substrate is provided. The composition comprises a deposition precursor having a central atom or ion (M) and at least one phosphonium imide ligand (L). 1 Methods and systems for forming layers on semiconductor substrates using the composition are also provided.

Description

[0001] Cross-references to related applications

[0002] This application claims the benefit of U.S. Provisional Application 63 / 751,575, filed January 30, 2025, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure generally relates to the field of semiconductor devices. More specifically, the present invention relates to methods, precursors and compositions for forming thin films or layers on semiconductor substrates, and related apparatus and equipment for producing them. Background Technology

[0004] Currently, the selection of precursors for atomic layer deposition (ALD) and chemical vapor deposition (CVD) thin film growth is limited to those containing only a few types of ligands, such as Cp, amidine, β-diketone, dialkylamide, alkoxide, alkyl, etc. Known examples have limitations that make them less than ideal for the growth of the desired layer (film). Limitations include limited (and often insufficient) reactivity range, halogen contamination and other types of contamination, oxygen incorporation, low volatility or low thermal stability, and low activation energy decomposition pathways, which lead to impurities and high resistivity. These drawbacks make current chemical choices suboptimal for film growth in many applications. Particularly for advanced memory applications, there is a current need for increased throughput to cover very high aspect ratio features, as well as the ability to operate under higher thermal budgets to define the correct crystalline phase. Current precursor selection does not meet these requirements, thus necessitating new ligand platforms.

[0005] In view of the above, there is a need to provide alternatives for ALD and / or CVD precursors for thin film deposition that can overcome some of these drawbacks. Summary of the Invention

[0006] This synopsis is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the following detailed description of exemplary embodiments of this disclosure. This synopsis is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0007] Generally, the techniques disclosed herein relate to the field of semiconductor devices, and more specifically to methods, precursors, and compositions for forming thin films or layers on semiconductor substrates using novel deposition precursors containing phosphine imide ligands. The precursors may contain other common ligands besides phosphine imide ligands. Deposition may be in the form of oxides, nitrides, carbides, borides, sulfides, phosphides, etc. These methods and compositions are suitable for the fabrication of semiconductor devices.

[0008] Due to the combination of kinetic stability and a larger electron donor for the metal center, the deposition precursors according to the invention exhibit increased thermal stability. Therefore, compared to current methods, the deposition precursors according to the invention offer improved reactivity and also provide improvements in thermal stability, volatility, and the ability to approach difficult materials such as carbides, borides, and nitrides, making them highly advantageous for use in compositions, methods, and apparatus for forming layers on semiconductor substrates.

[0009] Furthermore, compared to prior art compositions, compositions containing the deposition precursor according to the invention exhibit the ability to form layers or films with very high purity. In particular, compared to halogen-containing precursors, the compositions of the invention contain very low levels of impurities, such as halogen-containing or metal-containing impurities. Therefore, the compositions of the invention are particularly advantageous for forming halide-free layers or films.

[0010] The many benefits of using the deposition precursor according to the present invention compared to existing precursors include:

[0011] 1) Phosphine imides are topologically related to alkoxides. The latter are prevalent in ALD and CVD chemistry because they impart good volatility and thermal stability when attached to deposition precursors. Advantageously, this topological similarity allows for the prediction and fine-tuning of their chemical and physical behavior without requiring a complete reassessment of the compatibility of phosphine imides with ALD and / or CVD processes.

[0012] 2) Phosphine imides provide increased thermal stability to the complex due to resonant delocalization with the metal center.

[0013] 3) Phosphine imides provide a high degree of spatial regulation through direct changes in the phosphorus atom.

[0014] 4) They are easy to synthesize, inexpensive, and readily available on a large scale.

[0015] 5) Since the atom of the ligand attached to the central atom or ion is nitrogen, high reactivity to proton reactants can be expected (similar to alkylamide ligands).

[0016] 6) In a specific embodiment, NP bond breaking can be induced, thereby allowing for an easy pathway to form a nitride film.

[0017] Therefore, one aspect of this disclosure relates to a composition for forming a layer on a semiconductor substrate, the composition comprising a deposition precursor comprising:

[0018] - The central atom or ion (M); and

[0019] - At least one phosphonium imide ligand (L 1 ).

[0020] Another aspect of the invention relates to a vapor delivery container comprising a composition according to the aspects described herein, wherein the vapor delivery container is configured and arranged to supply vapor of a deposition precursor to the reaction chamber of a vapor deposition apparatus.

[0021] Another aspect of the present invention relates to a vapor deposition apparatus, comprising:

[0022] - A reaction chamber, which is constructed and arranged to at least hold a semiconductor substrate;

[0023] - A vapor delivery container comprising a composition containing a deposition precursor, wherein the vapor delivery container is configured and arranged to provide vapor of the deposition precursor;

[0024] - A precursor distribution and removal system configured to supply vapor of the deposition precursor from a vapor delivery vessel to a reaction chamber and to remove vapor of the deposition precursor from the reaction chamber; and

[0025] - A sequence controller operatively connected to a precursor dispensing and removal system and including a memory set with a program configured to control the flow of a composition containing a deposition precursor from a vapor delivery vessel to a reaction chamber by activating the precursor dispensing and removal system during one or more cycles; thereby, as a result of the cycle, a layer is formed on a semiconductor substrate in the reaction chamber;

[0026] The sedimentary precursors include:

[0027] - The central atom or ion (M); and

[0028] - At least one phosphonium imide ligand (L 1 ).

[0029] Another aspect of this disclosure relates to a method for forming a layer on a semiconductor substrate, comprising the following steps:

[0030] a) Providing a semiconductor substrate into the reaction chamber;

[0031] b) Execute one or more loops, each loop consisting of:

[0032] A deposition precursor pulse, wherein at least a portion of a semiconductor substrate is brought into contact with a vapor of a composition comprising the deposition precursor by introducing vapor of the deposition precursor into a reaction chamber;

[0033] The sedimentary precursors include:

[0034] - The central atom or ion (M); and

[0035] - At least one phosphonium imide ligand (L 1 );

[0036] As a result of the cycle, a layer is formed on the semiconductor substrate in the reaction chamber.

[0037] Another aspect of this disclosure relates to a semiconductor device structure. The semiconductor device structure according to the invention comprises a layer formed according to the methods disclosed herein.

[0038] In one or more specific embodiments of any of the aspects described herein, the compositions of the present invention comprise at least one phosphonium imide ligand (L) having a structure according to formula (I). 1 ):

[0039] (I)

[0040] in,

[0041] R 1 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups;

[0042] R 2 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups;

[0043] R 3 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups;

[0044] The condition is R 1 R 2 and R 3 At least one of them is not H.

[0045] An overview of various other aspects of the technology disclosed herein is provided below, followed by a detailed description of specific embodiments. It should be understood that the foregoing objects and advantages also apply to the various other aspects and features disclosed herein. Attached Figure Description

[0046] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements to aid in understanding the embodiments shown in this disclosure.

[0047] Figure 1 An exemplary embodiment of a method 100 for forming a layer on a semiconductor substrate according to an embodiment of the present disclosure is illustrated schematically.

[0048] Figure 2 An exemplary embodiment of a device 600 according to an embodiment of the present disclosure is illustrated schematically. Detailed Implementation

[0049] Although certain embodiments and examples are disclosed below, those skilled in the art will understand that this disclosure extends beyond the specific embodiments and / or uses disclosed herein, as well as their obvious modifications and equivalents. Therefore, it is intended that the scope of this disclosure should not be limited to the specific disclosed embodiments described below.

[0050] In the following detailed description, the technology upon which this disclosure is based will be described through various aspects of this disclosure. It will be readily understood that the aspects of this disclosure, as generally described herein and illustrated in the accompanying drawings, can be arranged, substituted, combined, and designed in a variety of different configurations, all of which are clearly contemplated and constitute part of this disclosure. This description is intended to assist the reader in a more readily understanding of the technical concepts, but is not intended to limit the scope of this disclosure, which is limited only by the claims. Therefore, the following description is to be considered illustrative in nature, not restrictive.

[0051] Throughout this specification, the reference to "an embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with that embodiment is included in at least one embodiment of this disclosure. Therefore, the phrases "in an embodiment" or "in one embodiment" appearing in various places throughout this specification do not necessarily refer to the same embodiment.

[0052] As used herein, the term "comprising" is synonymous with "including" or "containing" and is inclusive or open-ended, and does not exclude additional, unlisted members, elements, or method steps. When referring to listed members, elements, or method steps, the term "comprising" also includes embodiments "consisting of the listed members, elements, or method steps." Unless the context clearly specifies otherwise, the singular forms "a," "an," and "the" include both singular and plural indicators.

[0053] The objects described herein as “connected” or “linked” reflect the functional relationship between the objects being described. That is, the term indicates that the objects being described must be connected in a manner that performs a specified function, which may be a direct or indirect connection, either electrical or non-electrical (i.e., physical), as appropriate for the use of the term.

[0054] As used herein, the term "basic" refers to the complete or near-complete extent or degree of an action, characteristic, property, state, structure, item, or result. For example, a "basic" closed object would mean that the object is completely or almost completely closed. In some cases, the exact permissible deviation from absolute completeness may depend on the specific circumstances. However, in general, near-completeness will have the same overall result as if absolute and completeness were achieved. When used negatively, the term "basic" is equally applicable to referring to the complete or near-complete absence of an action, characteristic, property, state, structure, item, or result.

[0055] As used herein, the term “about” is used to provide flexibility for the endpoints of a numerical value or range by specifying that a given value can be “slightly above” or “slightly below” that value or endpoint, depending on the specific context. Unless otherwise stated, the use of the term “about” in relation to a particular number or range of numbers should also be understood to support such numerical terms or ranges for which the term “about” is not used. For example, the statement “about 30” should be interpreted as supporting not only values ​​slightly above and slightly below 30, but also the actual value of 30.

[0056] The description of a numerical range by endpoints includes all integers and, where appropriate, fractions contained within that range (e.g., when referring to, for example, the quantity of elements, 1 to 5 may include 1, 2, 3, 4, and when referring to, for example, a measure, it may also include 1.5, 2, 2.75, and 3.80). This applies to numerical ranges, whether they are introduced by expressing "from…to…" or "between…and…" or other expressions. The description of endpoints also includes the endpoint values ​​themselves (e.g., 1.0 to 5.0 includes both 1.0 and 5.0). Any numerical range described herein is intended to include all subranges contained therein. Furthermore, unless otherwise stated, the terms first, second, third, etc., in the specification and claims are used to distinguish similar elements and are not necessarily used to describe order or chronological sequence. It should be understood that the terms thus used are interchangeable where appropriate, and embodiments of this disclosure described herein can operate in a different order than that described or shown herein.

[0057] Reference may be made in this specification to devices, structures, apparatuses, systems, or methods that provide "improved" performance (e.g., results that are increased or decreased depending on the circumstances). It should be understood that, unless otherwise stated, such "improvement" is a measure of benefit obtained based on comparison with prior art devices, structures, apparatuses, systems, or methods. Furthermore, it should be understood that the degree of improved performance may vary between the disclosed embodiments, and the equivalence or consistency of the amount, degree, or implementation of improved performance is not considered universally applicable.

[0058] In this disclosure, "gas" can include materials that are gaseous at normal temperature and pressure (NTP), evaporated solids and / or evaporated liquids, and may consist of a single gas or a mixture of gases, depending on the circumstances. Gases other than process gases, i.e., gases not introduced through gas distribution components, other gas distribution devices, etc., can be used, for example, to seal the reaction space, and may include sealing gases, such as rare gases. In some cases, the term "precursor" can refer to a compound that participates in a chemical reaction to produce another compound, particularly a compound constituting the layer matrix or the main framework of the layer.

[0059] This specification describes techniques relating to compositions, methods, and apparatus for fabricating layers on semiconductor substrates. The inventors have surprisingly observed that deposition precursors containing phosphonium imide ligands can be readily used to form layers on semiconductor substrates. Furthermore, compositions containing precursors according to the invention are capable of forming films with very high purity, which is particularly advantageous for halide-free films. Advantageously, the deposition precursors according to this specification exhibit increased thermal stability due to kinetic stability and binding to larger electron donors for metal centers, and are easy to synthesize, thereby allowing for the easy formation of layers on semiconductor substrates from a variety of materials.

[0060] Therefore, one aspect of this disclosure relates to a composition for forming a layer on a semiconductor substrate, the composition comprising a deposition precursor comprising:

[0061] - The central atom or ion (M); and

[0062] - At least one phosphonium imide ligand (L 1 ).

[0063] The terms “substrate” and “semiconductor substrate” are used interchangeably herein and can refer to any one or more underlying materials on which devices, circuits, or layers (films) can be formed or are formed. A “substrate” can be continuous or discontinuous; rigid or flexible; solid or porous; and combinations thereof. A substrate can be in any form, such as powder, plate, or workpiece. Plate-type substrates can include wafers of various shapes and sizes. A substrate can include bulk materials such as silicon (e.g., single-crystal silicon), other group IV materials (e.g., germanium), or other semiconductor materials (e.g., group II-VI or group III-V semiconductor materials), and can include one or more layers overlying or underlying the bulk material. Furthermore, a substrate can include various features, such as recesses, protrusions, etc., formed within or on at least a portion of the substrate layers.

[0064] Examples of suitable substrates include wafers, such as silicon, silicon dioxide, glass, or GaAs wafers. Wafers can have one or more different materials deposited thereon from previous manufacturing steps. For example, wafers may include silicon layers (crystalline, amorphous, porous, etc.), silicon oxide layers, silicon nitride layers, silicon oxynitride layers, carbon-doped silicon oxide (SiCOH) layers, or combinations thereof. Additionally, wafers may include copper layers or noble metal layers (e.g., platinum, palladium, rhodium, or gold). Wafers may include barrier layers, such as manganese, manganese oxide, etc. Plastic layers, such as poly(3,4-ethylenedioxythiophene)poly(styrene sulfonate), may also be used. These layers can be planar or patterned.

[0065] In certain embodiments, the substrate may include materials such as crystalline silicon, silicon oxide, strained silicon, silicon germanium, sapphire, doped or undoped polycrystalline silicon, doped or undoped silicon, patterned or unpatterned silicon-on-insulator (SOI), carbon-doped silicon oxide, silicon carbide, silicon nitride, germanium, gallium arsenide, gallium nitride, glass, or combinations thereof (as bulk semiconductor materials).

[0066] As used interchangeably herein, “film” or “layer” refers to a material extending in a direction perpendicular to the thickness direction to cover the entire target or related surface, or simply a layer covering the target or related surface. In certain embodiments, a film or layer refers to a structure or membrane or non-film structure of a certain thickness formed on a surface. A layer may comprise a continuous or discontinuous structure or material, such as a material deposited according to the present technology. A film or layer may consist of discrete single films or layers or multiple films or layers having certain properties, and the boundaries between adjacent films or layers may or may not be clear, and may or may not be based on the physical, chemical and / or any other properties, formation process or sequence and / or function or purpose of adjacent films or layers.

[0067] For example, films and / or layers may include two-dimensional materials, three-dimensional materials, nanoparticles, or even partial or complete molecular layers or partial or complete atomic layers or atomic and / or molecular clusters, or layers composed of separate atoms and / or molecules. Films or layers may include materials or layers with pinholes, which may be continuous or discontinuous.

[0068] As used herein, the term "deposition precursor" refers to a chemical compound, molecule, or composition containing at least one element intended to be incorporated into a layer of material on a substrate during the deposition process. Deposition precursors are characterized by their ability to undergo chemical or physical transformations (e.g., decomposition, reaction with co-reactants, or adsorption) under conditions suitable for processes such as atomic layer deposition (ALD), chemical vapor deposition (CVD), or related techniques. In the context of this invention, the deposition precursor comprises a central atom or ion and one or more phosphonium imide ligands.

[0069] As used herein, the term "central atom or ion" refers to a core atom or ion within a chemical compound or complex (present in the deposition precursor) bound to one or more ligands. It should be understood that the invention is not particularly limited to a specific core atom or ion, as the choice can depend on the material intended to be deposited onto the substrate during the deposition process. For example, the central atom or ion may include alkali metals, alkaline earth metals, transition metals, lanthanides, metalloids, or combinations thereof.

[0070] In some embodiments, the central atom or ion (M) is selected from Al, Ga, In, B, Si, Ge, lanthanides, transition metals, and metalloids.

[0071] As used in this article, "lanthanides" refers to a group of chemical elements with atomic numbers 57-71, from lanthanum to lutetium. Lanthanides can be selected from: La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

[0072] As used in this article, "transition metals" refers to chemical elements in the d-block of the periodic table, namely groups 3 to 12.

[0073] As used herein, a "metalloid" refers to a chemical element whose properties are a mixture of metallic and nonmetallic properties. Metalloids include the following elements: B, Si, Ge, As, Sb, and Te. In some embodiments, metalloids are selected from Si, Ge, and B.

[0074] In some embodiments, the central atom or ion (M) is selected from Al, Ga, In, Si, Ge, B, rare earth metals, Group 4 metals, Group 5 metals, and Group 6 metals.

[0075] As used herein, “rare earth metal” refers to the following elements: Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. In some embodiments, the rare earth metal is selected from Sc, Y, La, Ce, Pr, Nd, Er, Tm, and Lu.

[0076] As used herein, “Group 4 metal” refers to the following elements: Ti, Zr, Hf, and Rf. In some embodiments, the Group 4 metal is selected from Ti, Zr, and Hf.

[0077] As used herein, “Group 5 metals” refers to the following elements: V, Nb, Ta, and Db. In some embodiments, Group 5 metals are selected from V, Nb, and Ta.

[0078] As used herein, “Group 6 metals” refers to the following elements: Cr, Mo, W, and Sg. In some embodiments, Group 6 metals are selected from Cr, Mo, and W.

[0079] In some embodiments, the central atom or ion (M) is selected from Al, Ga, In, Si, Ge, B, Sc, Y, La, Ce, Pr, Nd, Er, Tm, Lu, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W.

[0080] As used herein, "phosphonium imide ligand" or "phosphonium imide ligand" generally refers to a ligand comprising a phosphorus atom (P=N) bonded to a nitrogen atom in a double bond, wherein the phosphorus atom is further bonded to one or more substituents. In particular, the phosphonium imide ligand of the present invention can be of the general formula NPR3. -This indicates that each R group can be independently selected from hydrogen or an organic substituent, such as an amino, hydrocarbon, or silyl group, which may optionally be substituted. Depending on its coordination state in the complex contained in the deposition precursor, the nitrogen atom can carry a negative formal charge or be neutral. In the case of this invention, the phosphonium imide ligand can act as an electron-donating or π-donating ligand, forming a coordinate bond with the central atom or ion.

[0081] In some embodiments, at least one phosphonium imide ligand (L 1 It has the structure according to formula (I):

[0082] (I)

[0083] in,

[0084] R 1 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups;

[0085] R 2 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups;

[0086] R 3 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups;

[0087] The condition is R 1 R 2 and R 3 At least one of them is not H.

[0088] References to substituents in this specification are intended to indicate that one or more hydrogen atoms on an atom indicated by "substitution" are replaced, provided that the substitution does not exceed the normal valence of the atom shown, and that the substitution produces a chemically stable compound, i.e., a compound sufficiently robust to withstand separation from the reaction mixture.

[0089] Suitable substituents for hydrocarbon, amino, and / or silyl groups as defined herein include alkyl, alkenyl, alkynyl, aryl, or alkoxy groups.

[0090] The term "hydrocarbon group" refers to a chemical functional group derived from a hydrocarbon with one or fewer hydrogen atoms. Hydrocarbon groups according to the present invention include, but are not limited to, alkyl, cycloalkyl, cycloalkenyl, alkenyl, alkynyl, and aryl groups.

[0091] The term "alkyl" as a group or part of a group refers to the formula C n H 2n+1The alkyl group is a hydrocarbon group, where n is a number greater than or equal to 1. The alkyl group can be straight-chain or branched and can be substituted as shown herein. Typically, the alkyl groups of this disclosure contain 1 to 10 carbon atoms, preferably 1 to 8 carbon atoms, more preferably 1 to 6 carbon atoms, and more preferably 1 to 4 carbon atoms. When a subscript is used herein following a carbon atom, the subscript indicates the number of carbon atoms that the named group may contain. For example, the term "C 1-10 "Alkyl", as a group or part of a group, refers to the formula C n H 2n+1 The hydrocarbon group, where n is a number from 1 to 10. Therefore, for example, "C 1-8 "Alkyl" includes all straight-chain or branched alkyl groups having 1 to 8 carbon atoms, and therefore includes methyl, ethyl, n-propyl, isopropyl, butyl and their isomers (e.g., n-butyl, isobutyl, sec-butyl and tert-butyl); pentyl and its isomers, neopentyl, hexyl and its isomers, etc. "Substituted alkyl" refers to an alkyl group that is substituted at any available attachment point with one or more substituents (e.g., 1 to 3 substituents, such as 1, 2 or 3 substituents).

[0092] The term "cycloalkyl," as a group or part of a group, refers to a cycloalkyl group, i.e., a monovalent saturated hydrocarbon group having one or more ring structures and containing 3 to 10 carbon atoms, more preferably 3 to 8 carbon atoms; even more preferably 3 to 6 carbon atoms. Cycloalkyl includes all saturated hydrocarbon groups containing one or more rings, including monocyclic, bicyclic, or tricyclic groups. Other rings of polycyclic cycloalkyl groups can be fused, bridged, and / or linked by one or more spirocyclic atoms. When a subscript is used here following a carbon atom, the subscript indicates the number of carbon atoms that the named group may contain. For example, the term "C 3-10 "Cycloalkyl" is a cyclic alkyl group containing 3 to 10 carbon atoms. For example, the term "C 3-8 "Cycloalkyl" is a cyclic alkyl group containing 3 to 8 carbon atoms. For example, the term "C 3-6 "Cycloalkyl" is a cyclic alkyl group containing 3 to 6 carbon atoms. 3-10 Examples of cycloalkyl groups include, but are not limited to, adamantyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, bicyclo[2.2.1]hept-2-yl, (1S,4R)-norcamphen-2-yl, (1R,4R)-norcamphen-2-yl, (1S,4S)-norcamphen-2-yl, and (1R,4S)-norcamphen-2-yl.

[0093] The term "cycloalkenyl," as a group or part of a group, refers to a non-aromatic cyclic alkenyl group having at least one (usually 1 to 3, preferably 1) unsaturated site, i.e., sp. 2 Carbon-sp 2A carbon double bond; preferably 5 to 18 carbon atoms, more preferably 5 to 10 carbon atoms, and even more preferably 5 to 6 carbon atoms. Cycloalkenyl groups include all unsaturated hydrocarbon groups containing one or more rings, including monocyclic, bicyclic, or tricyclic groups. For example, cycloalkenyl groups may contain C... 5-10 Single ring or C 7-18 Polycyclic hydrocarbons. The additional rings can be fused, bridged, and / or connected by one or more spirocyclic atoms. When a subscript follows a carbon atom in this document, the subscript indicates the number of carbon atoms that the named group may contain. For example, the term "C 5-10 "Cycloalkenyl" refers to a cyclic alkenyl group containing 5 to 10 carbon atoms. For example, the term "C 5-8 "Cycloalkenyl" refers to a cyclic alkenyl group containing 5 to 8 carbon atoms. For example, the term "C 5-6 "Cycloalkenyl" refers to a cyclic alkenyl group containing 5 to 6 carbon atoms. Examples include, but are not limited to: cyclopentadienyl (Cp), cyclobutenyl, cyclopentenyl (-C5H7), cyclopentenylpropylene, methylcyclohexeneyl, and cyclohexenyl (-C6H9). The double bond can be in either cis or trans configuration. For the avoidance of ambiguity, a fused system of a cycloalkenyl ring with a heterocyclic ring is considered a heterocyclic ring, regardless of the ring bonded to the core structure. A fused system of a cycloalkenyl ring with an aryl ring is considered an aryl ring, regardless of the ring bonded to the core structure. A fused system of a cycloalkenyl ring with a heteroaryl ring is considered a heteroaryl ring, regardless of the ring bonded to the core structure. "Substituted cycloalkenyl" refers to a cycloalkenyl group having one or more substituents (e.g., 1, 2, or 3 substituents, or 1 to 2 substituents) at any available attachment point. Examples of substituted cycloalkenyl groups include MeCp, Me2Cp, EtCp, i-PrCp, t-BuCp, and TMSCp.

[0094] The term "alkenyl" refers to an unsaturated hydrocarbon group, which can be straight-chain or branched, containing one or more carbon-carbon double bonds. When a subscript is used following a carbon atom in this document, the subscript indicates the number of carbon atoms that the named group may contain. For example, the term "C 2-10 "Alkenyl" refers to an unsaturated hydrocarbon group, which can be straight-chain or branched, contains one or more carbon-carbon double bonds, and contains 2 to 10 carbon atoms. For example, C 2-6 Alkenyl groups include all straight-chain or branched alkenyl groups having 2 to 6 carbon atoms. C 2-6 Examples of alkenyl groups are vinyl, 2-propenyl, 2-butenyl, 3-butenyl, 2-pentenyl and its isomers, 2-hexenyl and its isomers, 2,4-pentadienyl, etc.

[0095] The term "alkynyl" refers to an unsaturated hydrocarbon group, which can be straight-chain or branched, containing one or more carbon-carbon triple bonds. When a subscript is used following a carbon atom in this document, the subscript indicates the number of carbon atoms that the named group may contain. For example, the term "C 2-10"Alkyne" refers to an unsaturated hydrocarbon group, which can be straight-chain or branched, contains one or more carbon-carbon triple bonds, and contains 2 to 10 carbon atoms. For example, C 2-6 Alkynes include all straight-chain or branched alkynes having 2 to 6 carbon atoms. 2-6 Non-limiting examples of alkynyl groups include ethynyl, 2-propynyl, 2-butynyl, 3-butynyl, 2-pentynyl and their chain isomers, 2-hexynyl and their chain isomers, etc.

[0096] The term "aryl," as a group or part of a group, refers to a polyunsaturated aromatic hydrocarbon group having multiple aromatic rings that are monocyclic (i.e., phenyl, cyclopentadienyl) or fused together (e.g., naphthyl) or covalently linked, typically containing 5 to 12 rings, at least one of which is aromatic. The aromatic ring may optionally include one or two additional rings (cycloalkyl, heterocyclic, or heteroaryl) fused with it. Examples of suitable aryl groups include C 5-10 Aryl, more preferably C 5-8 Aryl. Non-limiting examples of aryl groups include cyclopentadienyl, phenyl, biphenyl, biphenylene, or 1- or 2-naphthyl; 1-, 2-, 3-, 4-, 5-, or 6-tetrahydronaphthyl (also known as "1,2,3,4-tetrahydronaphthyl"); 1-, 2-, 3-, 4-, 5-, 6-, 7-, or 8-chamomilecycloyl; 4-, 5-, 6-, or 7-indenyl; 4- or 5-indenyl; 5-, 6-, 7-, or 8-tetrahydronaphthyl; 1,2, 3,4-tetrahydronaphthyl; and 1,4-dihydronaphthyl; 1-, 2-, 3-, 4-, or 5-pyrene. "Substituted aryl" means an aryl group having one or more substituents (e.g., 1, 2, or 3 substituents or 1 to 2 substituents) at any available attachment site. Examples of substituted aryl groups include phenyl (Ph), MePh, EtPh, etc.

[0097] The term "amino" refers to the formula -N(R) o (R) p ) groups, wherein R o and R p Each is independently selected from hydrogen and C. 1-6 Alkyl, C 2-6 alkenyl, C 2-6 alkynyl group, C 3-10 cycloalkyl or C 5-12 Aryl group. Preferably, the amino group is selected from -NH2, mono-C. 1-6 Alkylamino and di-C 1-6 Alkylamino.

[0098] The term "single- or bi-C" 1-6 "alkylamino" refers to the formula -N(R o (R) p ) groups, wherein R o and Rp Each is independently selected from hydrogen or C. 1-6 Alkyl, wherein R o or R p At least one of them is C 1-6 Alkyl groups. Therefore, alkylamino groups include monoalkylamino groups (e.g., mono-C). 1-6 Alkylamino groups, such as methylamino and ethylamino, and dialkylamino groups, such as di-C 1-6 Alkylamino groups, such as dimethylamino and diethylamino. Suitable mono- and di-C... 1-6 Non-limiting examples of alkylamino groups include n-propylamino, isopropylamino, n-butylamino, isobutylamino, sec-butylamino, tert-butylamino, pentylamino, n-hexylamino, di-n-propylamino, diisopropylamino, ethylmethylamino, methyl-n-propylamino, methyl-isopropylamino, n-butylmethylamino, isobutylmethylamino, tert-butylmethylamino, ethyl-n-propylamino, ethyl-isopropylamino, n-butylethylamino, isobutylethylamino, tert-butylethylamino, di-n-butylamino, diisobutylamino, methylpentylamino, methylhexylamino, ethylpentylamino, ethylhexylamino, propylpentylamino, propylhexylamino, etc.

[0099] The term "silyl" refers to the formula -Si(R) o (R) p (R) q ) groups, wherein R o R p and R q Each is independently selected from hydrogen and C. 1-6 Alkyl, C 2-6 alkenyl, C 2-6 alkynyl group, C 3-10 cycloalkyl or C 5-12 Aryl group. Preferably, the silyl group is selected from -SiH3, mono-C... 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl and tri-C 1-6 Alkyl silyl group.

[0100] The term "single-, di-, or tri-C" 1-6 "alkylsilyl" refers to the formula -Si(R o (R) p (R) q ) groups, wherein R o R p and R q Each is independently selected from hydrogen or C. 1-6 Alkyl, wherein R o R p or R q At least one of them is C1-6 Alkyl group. Therefore, single-C 1-6 Alkylsilyl groups include, for example, methylsilyl and ethylsilyl groups; di-C 1-6 Alkylsilyl groups include, for example, dimethylsilyl and diethylsilyl groups, tri-C 1-6 Alkylsilyl groups include, for example, trimethylsilyl and triethylsilyl groups. Suitable mono-, di-, and tri-C groups. 1-6 Non-limiting examples of alkylsilanes include n-propylsilane, isopropylsilane, n-butylsilane, isobutylsilane, sec-butylsilane, tert-butylsilane, pentylsilane, n-hexylsilane, di-n-propylsilane, diisopropylsilane, ethylmethylsilane, methyl-n-propylsilane, methyl-isopropylsilane, n-butylmethylsilane, isobutylmethylsilane, tert-butylmethylsilane, and ethyl-n-propylsilane. Ethyl-isopropylsilyl, n-butylethylsilyl, isobutylethylsilyl, tert-butylethylsilyl, di-n-butylsilyl, diisobutylsilyl, methylpentylsilyl, methylhexylsilyl, ethylpentylsilyl, ethylhexylsilyl, propylpentylsilyl, propylhexylsilyl, trimethylsilyl, triethylsilyl, tri-n-propylsilyl, triisopropylsilyl, tri-n-butylsilyl, triisobutylsilyl, etc.

[0101] Term "C" 1-6 "Alkoxy", as a group or part of a group, refers to a group having the formula -OR b The group, wherein R b It is C as defined above. 1-6 Alkyl group. Suitable C 1-6 Non-limiting examples of alkoxy groups include methoxy, ethoxy, propoxy, isopropoxy, butoxy, isobutoxy, sec-butoxy, tert-butoxy, pentoxy, neopentoxy, isopentoxy, and hexoxy.

[0102] The terms "heterocyclic group," "heterocyclic alkyl group," or "heterocycle," as a group or part of a group, refer to a non-aromatic, fully saturated, or partially unsaturated cyclic group (e.g., a 3- to 7-membered monocyclic ring, a 7- to 11-membered bicyclic ring, or containing a total of 3 to 10 ring atoms) having at least one heteroatom in at least one carbon-containing ring; wherein said ring may be fused with an aryl, cycloalkyl, heteroaryl, or heterocyclic ring. Each ring of a heterocyclic group containing a heteroatom may have 1, 2, 3, or 4 heteroatoms selected from N, O, and / or S, wherein the N and S heteroatoms may optionally be oxidized and the N heteroatom may optionally be quaternized; and wherein at least one carbon atom of the heterocyclic group may be oxidized to form at least one C=O. Where valence permits, the heterocyclic group may be attached to any heteroatom or carbon atom of the ring or ring system. The rings of a polycyclic heterocycle may be fused, bridged, and / or linked by one or more spirocyclic atoms.

[0103] Non-limiting exemplary heterocyclic groups include aziridinyl, ethylene oxide, thiohexacyclopropane, piperidinyl, aziridine, oxacyclobutane, pyrrolyl, thiohexacyclobutane, 2-imidazolinyl, pyrazolyl, imidazolinyl, isoxazolinyl, oxazolinyl, isoxazolinyl, thiazolinyl, isothiazolyl, piperidinyl, succinimide, 3H-indolyl, dihydroindolyl, isodihydroindolyl, chromanyl (also known as 3,4-dihydrobenzo[b]pyranyl), 2H-pyrrolyl, 1-pyrrolinyl, 2-pyrrolinyl, 3-pyrrolinyl, 4H-quinazinyl, 2-oxopiperazinyl, piperazinyl, homopiperazinyl, 2-pyrrolinyl, 3-pyrrolinyl, tetrahydro-2H-pyranyl, 2H-pyranyl, 4H -Pyranyl, 3,4-dihydro-2H-pyranyl, 3-dioxolane, 1,4-dioxane, 2,5-dioxolane, 2-oxopiperidinyl, 2-oxopiperyl, dihydroindolyl, tetrahydropyranyl, tetrahydrofuranyl, tetrahydrothiophene, tetrahydroquinolinyl, tetrahydroisoquinoline-1-yl, tetrahydroisoquinoline-2-yl, tetrahydroisoquinoline-3-yl, tetrahydroisoquinoline-4-yl, thiomorpholin-4-yl, thiomorpholin-4-yl sulfoxide, thiomorpholin-4-yl sulfone, 1,3-dioxolane, 1,4-oxothiacyclohexyl, 1,4-dithiaalkyl, 1,3,5-trioxacyclohexyl, 1H-pyrrolazinyl, tetrahydro-1,1-dioxothiophene, N-formylpiperazinyl and morpholin-4-yl. As used herein, the term "aziridinyl" includes aziridin-1-yl and aziridin-2-yl. As used herein, the term "ethylene oxide" includes ethylene oxide-2-yl. As used herein, the term "thiapropylcycloyl" includes thiapropylcycloyl-2-yl. As used herein, the term "azircyclobutane" includes azircyclobutane-1-yl, azircyclobutane-2-yl, and azircyclobutane-3-yl. As used herein, the term "oxacyclobutane" includes oxacyclobutane-2-yl and oxacyclobutane-3-yl. As used herein, the term "thiacyclobutane" includes thiacyclobutane-2-yl and thiacyclobutane-3-yl. As used herein, the term "pyrrolidinyl" includes pyrrolidin-1-yl, pyrrolidin-2-yl, and pyrrolidin-3-yl. As used herein, the term "tetrahydrofuranyl" includes tetrahydrofuran-2-yl and tetrahydrofuran-3-yl. As used herein, the term "tetrahydrothiophene" includes tetrahydrothiophene-2-yl and tetrahydrothiophene-3-yl. As used herein, the term "succinimide" includes succinimide-1-yl and succinimide-3-yl. As used herein, the term "dihydropyrrole" includes 2,3-dihydropyrrole-1-yl, 2,3-dihydro-1H-pyrrole-2-yl, 2,3-dihydro-1H-pyrrole-3-yl, 2,5-dihydropyrrole-1-yl, 2,5-dihydro-1H-pyrrole-3-yl, and 2,5-dihydropyrrole-5-yl.As used herein, the term "2H-pyrrole" includes 2H-pyrrole-2-yl, 2H-pyrrole-3-yl, 2H-pyrrole-4-yl, and 2H-pyrrole-5-yl. As used herein, the term "3H-pyrrole" includes 3H-pyrrole-2-yl, 3H-pyrrole-3-yl, 3H-pyrrole-4-yl, and 3H-pyrrole-5-yl. As used herein, the term "dihydrofuranyl" includes 2,3-dihydrofuran-2-yl, 2,3-dihydrofuran-3-yl, 2,3-dihydrofuran-4-yl, 2,3-dihydrofuran-5-yl, 2,5-dihydrofuran-2-yl, 2,5-dihydrofuran-3-yl, 2,5-dihydrofuran-4-yl, and 2,5-dihydrofuran-5-yl. As used herein, the term "dihydrothiophene" includes 2,3-dihydrothiophene-2-yl, 2,3-dihydrothiophene-3-yl, 2,3-dihydrothiophene-4-yl, 2,3-dihydrothiophene-5-yl, 2,5-dihydrothiophene-2-yl, 2,5-dihydrothiophene-3-yl, 2,5-dihydrothiophene-4-yl, and 2,5-dihydrothiophene-5-yl. As used herein, the term "imidazolidinyl" includes imidazolin-1-yl, imidazolin-2-yl, and imidazolin-4-yl. As used herein, the term "pyrazolylyl" includes pyrazollin-1-yl, pyrazollin-3-yl, and pyrazollin-4-yl. As used herein, the term "imidazolinyl" includes imidazolin-1-yl, imidazolin-2-yl, imidazolin-4-yl, and imidazolin-5-yl. As used herein, the term "pyrazolinyl" includes 1-pyrazolin-3-yl, 1-pyrazolin-4-yl, 2-pyrazolin-1-yl, 2-pyrazolin-3-yl, 2-pyrazolin-4-yl, 2-pyrazolin-5-yl, 3-pyrazolin-1-yl, 3-pyrazolin-2-yl, 3-pyrazolin-3-yl, 3-pyrazolin-4-yl, and 3-pyrazolin-5-yl. As used herein, the term "dioxolaneyl" (also known as "1,3-dioxolaneyl") includes dioxolane-2-yl, dioxolane-4-yl, and dioxolane-5-yl. As used herein, the term "dioxacyclopentenyl" (also known as "1,3-dioxacyclopentenyl") includes dioxacyclopenten-2-yl, dioxacyclopenten-4-yl, and dioxacyclopenten-5-yl. As used herein, the term "oxazolidinyl" includes oxazolidin-2-yl, oxazolidin-3-yl, oxazolidin-4-yl, and oxazolidin-5-yl. As used herein, the term "isooxazolidinyl" includes isoxazolidin-2-yl, isoxazolidin-3-yl, isoxazolidin-4-yl, and isoxazolidin-5-yl. As used herein, the term "oxazolinyl" includes 2-oxazolinyl-2-yl, 2-oxazolinyl-4-yl, 2-oxazolinyl-5-yl, 3-oxazolinyl-2-yl, 3-oxazolinyl-4-yl, 3-oxazolinyl-5-yl, 4-oxazolinyl-2-yl, 4-oxazolinyl-3-yl, 4-oxazolinyl-4-yl, and 4-oxazolinyl-5-yl.As used herein, the term "isoxazolinyl" includes 2-isoxazolinyl-3-yl, 2-isoxazolinyl-4-yl, 2-isoxazolinyl-5-yl, 3-isoxazolinyl-3-yl, 3-isoxazolinyl-4-yl, 3-isoxazolinyl-5-yl, 4-isoxazolinyl-2-yl, 4-isoxazolinyl-3-yl, 4-isoxazolinyl-4-yl, and 4-isoxazolinyl-5-yl. As used herein, the term "thiazolinyl" includes thiazolinyl-2-yl, thiazolinyl-3-yl, thiazolinyl-4-yl, and thiazolinyl-5-yl. As used herein, the term "isothiazolinyl" includes isothiazolyl-2-yl, isothiazolyl-3-yl, isothiazolyl-4-yl, and isothiazolyl-5-yl. As used herein, the term "thiazolinyl" includes 2-thiazolinyl-2-yl, 2-thiazolinyl-4-yl, 2-thiazolinyl-5-yl, 3-thiazolinyl-2-yl, 3-thiazolinyl-4-yl, 3-thiazolinyl-5-yl, 4-thiazolinyl-2-yl, 4-thiazolinyl-3-yl, 4-thiazolinyl-4-yl, and 4-thiazolinyl-5-yl. As used herein, the term "isothiazolinyl" includes 2-isothiazolin-3-yl, 2-isothiazolin-4-yl, 2-isothiazolin-5-yl, 3-isothiazolin-3-yl, 3-isothiazolin-4-yl, 3-isothiazolin-5-yl, 4-isothiazolin-2-yl, 4-isothiazolin-3-yl, 4-isothiazolin-4-yl, and 4-isothiazolin-5-yl. As used herein, the term "piperidinyl" (also known as "piperidinyl") includes piperidin-1-yl, piperidin-2-yl, piperidin-3-yl, and piperidin-4-yl. As used herein, the term "dihydropyridyl" includes 1,2-dihydropyridin-1-yl, 1,2-dihydropyridin-2-yl, 1,2-dihydropyridin-3-yl, 1,2-dihydropyridin-4-yl, 1,2-dihydropyridin-5-yl, 1,2-dihydropyridin-6-yl, 1,4-dihydropyridin-1-yl, 1,4-dihydropyridin-2-yl, 1,4-dihydropyridin-3-yl, 1,4-dihydropyridin-4-yl, 2,3-dihydropyridin-2-yl, 2,3-dihydropyridin-3-yl 2,3-Dihydropyridin-4-yl, 2,3-Dihydropyridin-5-yl, 2,3-Dihydropyridin-6-yl, 2,5-Dihydropyridin-2-yl, 2,5-Dihydropyridin-3-yl, 2,5-Dihydropyridin-4-yl, 2,5-Dihydropyridin-5-yl, 2,5-Dihydropyridin-6-yl, 3,4-Dihydropyridin-2-yl, 3,4-Dihydropyridin-3-yl, 3,4-Dihydropyridin-4-yl, 3,4-Dihydropyridin-5-yl and 3,4-Dihydropyridin-6-yl.As used herein, the term "tetrahydropyridyl" includes 1,2,3,4-tetrahydropyridin-1-yl, 1,2,3,4-tetrahydropyridin-2-yl, 1,2,3,4-tetrahydropyridin-3-yl, 1,2,3,4-tetrahydropyridin-4-yl, 1,2,3,4-tetrahydropyridin-5-yl, 1,2,3,4-tetrahydropyridin-6-yl, 1,2,3,6-tetrahydropyridin-1-yl, and 1,2,3,6-tetrahydropyridin-2-yl. 1,2,3,6-Tetrahydropyridin-3-yl, 1,2,3,6-Tetrahydropyridin-4-yl, 1,2,3,6-Tetrahydropyridin-5-yl, 1,2,3,6-Tetrahydropyridin-6-yl, 2,3,4,5-Tetrahydropyridin-2-yl, 2,3,4,5-Tetrahydropyridin-3-yl, 2,3,4,5-Tetrahydropyridin-4-yl, 2,3,4,5-Tetrahydropyridin-5-yl, and 2,3,4,5-Tetrahydropyridin-6-yl. The term "tetrahydropyranyl" (also known as "oxacyclohexyl" or "tetrahydro-2H-pyranyl") as used herein includes tetrahydropyran-2-yl, tetrahydropyran-3-yl, and tetrahydropyran-4-yl. As used herein, the term "2H-pyranyl" includes 2H-pyran-2-yl, 2H-pyran-3-yl, 2H-pyran-4-yl, 2H-pyran-5-yl, and 2H-pyran-6-yl. As used herein, the term "4H-pyranyl" includes 4H-pyran-2-yl, 4H-pyran-3-yl, and 4H-pyran-4-yl. As used herein, the term "3,4-dihydro-2H-pyranyl" includes 3,4-dihydro-2H-pyran-2-yl, 3,4-dihydro-2H-pyran-3-yl, 3,4-dihydro-2H-pyran-4-yl, 3,4-dihydro-2H-pyran-5-yl, and 3,4-dihydro-2H-pyran-6-yl. As used herein, the term "3,6-dihydro-2H-pyranyl" includes 3,6-dihydro-2H-pyran-2-yl, 3,6-dihydro-2H-pyran-3-yl, 3,6-dihydro-2H-pyran-4-yl, 3,6-dihydro-2H-pyran-5-yl, and 3,6-dihydro-2H-pyran-6-yl. As used herein, the term "tetrahydrothiophenyl" includes tetrahydrothiophen-2-yl, tetrahydrothiophen-3-yl, and tetrahydrothiophen-4-yl. As used herein, the term "2H-thiaranyl" includes 2H-thiaran-2-yl, 2H-thiaran-3-yl, 2H-thiaran-4-yl, 2H-thiaran-5-yl, and 2H-thiaran-6-yl. As used herein, the term "4H-thiaranyl" includes 4H-thiaran-2-yl, 4H-thiaran-3-yl, and 4H-thiaran-4-yl. As used herein, the term "3,4-dihydro-2H-thiaranyl" includes 3,4-dihydro-2H-thiaran-2-yl, 3,4-dihydro-2H-thiaran-3-yl, 3,4-dihydro-2H-thiaran-4-yl, 3,4-dihydro-2H-thiaran-5-yl, and 3,4-dihydro-2H-thiaran-6-yl.As used herein, the term "3,6-dihydro-2H-thiaranyl" includes 3,6-dihydro-2H-thiaran-2-yl, 3,6-dihydro-2H-thiaran-3-yl, 3,6-dihydro-2H-thiaran-4-yl, 3,6-dihydro-2H-thiaran-5-yl, and 3,6-dihydro-2H-thiaran-6-yl. As used herein, the term "piperazinyl" is also called "piperazidinyl" and includes piperazin-1-yl and piperazin-2-yl. As used herein, the term "morpholinyl" includes morpholin-2-yl, morpholin-3-yl, and morpholin-4-yl. As used herein, the term "thiomorpholinyl" includes thiomorpholin-2-yl, thiomorpholin-3-yl, and thiomorpholin-4-yl. As used herein, the term "dioxane-hexyl" includes 1,2-dioxane-3-yl, 1,2-dioxane-4-yl, 1,3-dioxane-2-yl, 1,3-dioxane-4-yl, 1,3-dioxane-5-yl, and 1,4-dioxane-2-yl. As used herein, the term "dithiaalkyl" includes 1,2-dithiaalkyl-3-yl, 1,2-dithiaalkyl-4-yl, 1,3-dithiaalkyl-2-yl, 1,3-dithiaalkyl-4-yl, 1,3-dithiaalkyl-5-yl, and 1,4-dithiaalkyl-2-yl. As used herein, the term "oxothiacyclohexyl" includes oxothiacyclohexyl-2-yl and oxothiacyclohexyl-3-yl. As used herein, the term "trioxanehexyl" includes 1,2,3-trioxane-4-yl, 1,2,3-trioxane-5-yl, 1,2,4-trioxane-3-yl, 1,2,4-trioxane-5-yl, 1,2,4-trioxane-6-yl, and 1,3,4-trioxane-2-yl. As used herein, the term "azircycloheptyl" includes azircycloheptane-1-yl, azircycloheptane-2-yl, azircycloheptane-3-yl, and azircycloheptane-4-yl. As used herein, the term "homoperazinyl" includes holoperazin-1-yl, holoperazin-2-yl, holoperazin-3-yl, and holoperazin-4-yl. As used herein, the term "dihydroindolyl" includes dihydroindol-1-yl, dihydroindol-2-yl, dihydroindol-3-yl, dihydroindol-4-yl, dihydroindol-5-yl, dihydroindol-6-yl, and dihydroindol-7-yl. As used herein, the term "quinazinyl" includes quinazinalkyl-1-yl, quinazinalkyl-2-yl, quinazinalkyl-3-yl, and quinazinalkyl-4-yl. As used herein, the term "isoindololinyl" includes isoindololin-1-yl, isoindololin-2-yl, isoindololin-3-yl, isoindololin-4-yl, isoindololin-5-yl, isoindololin-6-yl, and isoindololin-7-yl.As used herein, the term "3H-indolyl" includes 3H-indol-2-yl, 3H-indol-3-yl, 3H-indol-4-yl, 3H-indol-5-yl, 3H-indol-6-yl, and 3H-indol-7-yl. As used herein, the term "quinazinyl" includes quinazin-1-yl, quinazin-2-yl, quinazin-3-yl, and quinazin-4-yl. As used herein, the term "tetrahydroquinolinyl" includes tetrahydroquinolin-1-yl, tetrahydroquinolin-2-yl, tetrahydroquinolin-3-yl, tetrahydroquinolin-4-yl, tetrahydroquinolin-5-yl, tetrahydroquinolin-6-yl, tetrahydroquinolin-7-yl, and tetrahydroquinolin-8-yl. As used herein, the term "tetrahydroisoquinoline" includes tetrahydroisoquinoline-1-yl, tetrahydroisoquinoline-2-yl, tetrahydroisoquinoline-3-yl, tetrahydroisoquinoline-4-yl, tetrahydroisoquinoline-5-yl, tetrahydroisoquinoline-6-yl, tetrahydroisoquinoline-7-yl, and tetrahydroisoquinoline-8-yl. Similarly, as used herein, the term "benzodihydropyranyl" includes benzodihydropyran-2-yl, benzodihydropyran-3-yl, benzodihydropyran-4-yl, benzodihydropyran-5-yl, benzodihydropyran-6-yl, benzodihydropyran-7-yl, and benzodihydropyran-8-yl. As used herein, the term "1H-pyrrolizine" includes 1H-pyrrolizine-1-yl, 1H-pyrrolizine-2-yl, 1H-pyrrolizine-3-yl, 1H-pyrrolizine-5-yl, 1H-pyrrolizine-6-yl, and 1H-pyrrolizine-7-yl. Similarly, as used herein, the term "3H-pyrrolizine" includes 3H-pyrrolizine-1-yl, 3H-pyrrolizine-2-yl, 3H-pyrrolizine-3-yl, 3H-pyrrolizine-5-yl, 3H-pyrrolizine-6-yl, and 3H-pyrrolizine-7-yl.

[0104] The term "heteroaryl," as a group or part of a group, refers to, but is not limited to, an aromatic ring of 5 to 12 carbon atoms or a ring system containing one or two rings (which may be fused together or covalently linked), typically containing 5 to 6 atoms; at least one of which is aromatic, wherein one or more carbon atoms of one or more of these rings may be replaced by N, O, and / or S atoms, wherein the N and S heteroatoms may optionally be oxidized and the N heteroatomium may optionally be quaternized, and wherein at least one carbon atom of the heteroaryl group may be oxidized to form at least one C=O. Such a ring may be fused with an aryl, cycloalkyl, heteroaryl, or heterocyclic ring. Non-limiting examples of such heteroaryl groups include: pyrrole, furanyl, thiophene, pyrazolyl, imidazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, triazolyl, oxadiazolyl, thiadiazolyl, tetrazolyl, oxtriazolyl, thiatriazolyl, pyridyl, pyrazinyl, pyridazinyl, oxazinyl, dioxoethene, thiazinyl, triazinyl, imidazo[2,1-b][1,3]thiazolyl, thieno[3,2-b]furanyl, thiazolyl, etc. Pheno[3,2-b]thiophene, thiophene[2,3-d][1,3]thiazolyl, thiophene[2,3-d]imidazolyl, tetrazo[1,5-a]pyridyl, indole, indazinyl, isoindole, benzofuranyl, isobenzofuranyl, benzothiophene, isobenzothiophene, indazole, benzimidazolyl, 1,3-benzoxazolyl, 1,2-benzoisoxazolyl, 2,1-benzoisoxazolyl, 1,3-benzothiazolyl , 1,2-benzisothiazolyl, 2,1-benzisothiazolyl, benzotriazolyl, 1,2,3-benzodiazolyl, 2,1,3-benzodiazolyl, 1,2,3-benzothiadiazolyl, 2,1,3-benzothiadiazolyl, benzo[d]azole-2(3H)-one, 2,3-dihydro-benzofuranyl, thienopyridyl, purine, imidazo[1,2-a]pyridyl, 6-oxo-pyridazin-1(6H)-yl, 2- Oxopyridin-1(2H)-yl, 1,3-benzodioxacyclopentenyl, quinolinyl, isoquinolinyl, octenyl, quinazolinyl, quinoxalinyl; preferably, the heteroaryl group is selected from pyridinyl, 1,3-benzodioxacyclopentenyl, benzo[d]azole-2(3H)-one, 2,3-dihydro-benzofuranyl, pyrazinyl, pyrazolyl, pyrroleyl, isoxazolyl, thiophenyl, imidazoyl, benzimidazolyl, pyrimidinyl, triazolyl, and thiazolyl.

[0105] In some embodiments, the deposition precursor comprises at least one phosphonium imide ligand (L) having a structure according to formula (I). 1 ),in:

[0106] R 1 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups;

[0107] R2 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups;

[0108] R 3 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups;

[0109] The condition is R 1 R 2 and R 3 At least one of them is not H.

[0110] In some embodiments, the deposition precursor comprises at least one phosphonium imide ligand (L) having a structure according to formula (I). 1 ),in:

[0111] R 1 Selected from H, C 1-10 Alkyl, C 2-10 alkenyl, C 2-10 alkynyl group, C 3-10 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl, tri-C 1-6 Alkyl silyl;

[0112] R 2 Selected from H, C 1-10 Alkyl, C 2-10 alkenyl, C 2-10 alkynyl group, C 3-10 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl and tri-C 1-6 Alkyl silyl;

[0113] R 3 Selected from H, C 1-10 Alkyl, C 2-10 alkenyl, C 2-10 alkynyl group, C 3-10 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl and tri-C 1-6 Alkyl silyl group.

[0114] In some embodiments, the deposition precursor comprises at least one phosphonium imide ligand (L) having a structure according to formula (I). 1 ),in:

[0115] R 1 Selected from H, C 1-6 Alkyl, C 3-6 cycloalkyl, C 1-6 Alkyl-substituted C 3-6 cycloalkyl, aryl and C-shaped 1-6 Alkyl-substituted aryl; preferably, R 1 Selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, C 3-6 Cycloalkyl groups and C groups substituted with methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, or tert-butyl 3-6 cycloalkyl;

[0116] R 2 Selected from H, C 1-10 Alkyl, C 2-10 alkenyl, C 2-10 alkynyl group, C 3-10 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl and tri-C 1-6 Alkyl silyl; preferably, R 2 Selected from H, C 1-6 Alkyl, C 2-6 alkenyl, C 2-16 alkynyl group, C 3-8 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl, tri-C 1-6 Alkyl silyl; preferably, R 2Selected from H, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, neopentyl, isopentyl, hexyl, cyclopentadienyl, phenyl, methyl-cyclopentadienyl (MeCp), dimethyl-cyclopentadienyl (Me2Cp), isopropyl-cyclopentadienyl (i-PrCp), tert-butyl-cyclopentadienyl (t-BuCp), trimethylsilyl-cyclopentadienyl (TMSCp), methyl-phenyl (MePh), ethyl-phenyl (EtPh), -NH2, monomethylamino, monoethylamino, dimethylamino, diethylamino, -SiH3, monomethylsilyl, monoethylsilyl, dimethylsilyl, diethylsilyl, trimethylsilyl, and triethylsilyl;

[0117] R 3 Selected from H, C 1-10 Alkyl, C 2-10 alkenyl, C 2-10 alkynyl group, C 3-10 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl, tri-C 1-6 Alkyl silyl; preferably, R 3 Selected from H, C 1-6 Alkyl, C 2-6 alkenyl, C 2-6 alkynyl group, C 3-8 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl, tri-C 1-6 Alkyl silyl; preferably, R 3Selected from H, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, neopentyl, isopentyl, hexyl, cyclopentadienyl, phenyl, methyl-cyclopentadienyl (MeCp), dimethyl-cyclopentadienyl (Me2Cp), isopropyl-cyclopentadienyl (i-PrCp), tert-butyl-cyclopentadienyl (t-BuCp), trimethylsilyl-cyclopentadienyl (TMSCp), methyl-phenyl (MePh), ethyl-phenyl (EtPh), -NH2, monomethylamino, monoethylamino, dimethylamino, diethylamino, trimethylamino, triethylamino, -SiH3, monomethylsilyl, monoethylsilyl, dimethylsilyl, diethylsilyl, trimethylsilyl, and triethylsilyl;

[0118] In some embodiments, R 1 R 2 and R 3 At least one of them is not a hydrogen atom. In some embodiments, R 1 R 2 and R 3 At least two of them are not hydrogen atoms.

[0119] In some embodiments, R 1 R 2 and R 3 Each independently selected from C1- 10 Alkyl; preferably, R 1 R 2 and R 3 Each of them is an independently selected C1-6 alkyl group.

[0120] It should be understood that, within the scope of this disclosure, the deposition precursor may contain any combination of ligands of the aforementioned types.

[0121] In some embodiments, the layer is a metal (M) nitride, metal (M) oxide, metal (M) phosphide, P-doped metal (M) nitride, metal (M) boride, metal (M) carbide, or metal (M) sulfide.

[0122] In some embodiments, the layer is an N-doped metal (M) oxide, an N-doped metal (M) nitride, an N-doped metal (M) phosphide, an N-doped metal (M) boride, an N-doped metal (M) carbide, an N-doped metal (M) sulfide, or an N-doped metal (M) silicide. The N-doping level can range from 0.01 to 10 atomic percent, unless these elements are already implicit in the composition.

[0123] In some embodiments, the layer is a P-doped metal (M) nitride, P-doped metal (M) phosphide, P-doped metal (M) boride, P-doped metal (M) carbide, P-doped metal (M) sulfide, or P-doped metal (M) silicide. The P-doping level can range from 0.01 to 10 atomic percent, unless these elements are already implicit in the composition.

[0124] In some embodiments, the deposition precursor comprises one or more identical formula (I) ligands; these compounds may also be referred to as homogamic ylides.

[0125] In some embodiments, the deposition precursor comprises according to M(L) 1 The structure of )4 or is composed of it, wherein M is selected from Group 4 metals, V and Mo; preferably, M is selected from Hf, Zr, Ti, V and Mo.

[0126] In some embodiments, the deposition precursor comprises or consists of a structure according to formula (Ia):

[0127] (Ia)

[0128] in,

[0129] M is selected from Group 4 metals, V, and Mo; preferably, M is selected from Hf, Zr, Ti, V, and Mo.

[0130] R 1 R 2 and R 3 As described in this article.

[0131] In some embodiments, the deposition precursor comprises according to M(L) 1 The structure of )3 or its dimer or composed of it, wherein M is selected from Al, In, Ga and rare earth metals; preferably, M is selected from Al, In, Ga and lanthanides, and more preferably Sc, Y, La, Ce, Pr, Nd, Er, Tm and Lu.

[0132] In some embodiments, the deposition precursor comprises or is composed of a structure according to formula (Ib) or (Ic):

[0133] (Ib); (Ic)

[0134] in,

[0135] M is selected from Al, In, Ga and rare earth metals; preferably, M is selected from Al, In, Ga and lanthanides, and more preferably Sc, Y, La, Ce, Pr, Nd, Er, Tm and Lu;

[0136] R 1 R2 and R 3 As described in this article.

[0137] As used herein, compounds in which different ligands are attached to the same central metal atom are referred to in the art as heterocoordination complexes.

[0138] In some embodiments, the deposition precursor comprises at least one phosphonium imide ligand (L 1 ) and at least one other ligand (L 2 ), wherein the other ligand (L 2 The ligands are selected from cyclopentadienyl ligands, amide ligands, imide ligands, amidine ligands, halide ligands, alkyl ligands, alkoxide ligands, silyloxy ligands, diketide ligands, 1,4-diazabutadiene ligands, amidide ligands, alkylamide ligands, oxo ligands, hydride ligands, and guanidinyl ligands.

[0139] In some embodiments, one or more additional ligands (L 2 ) is the cyclopentadienyl ligand of formula (1):

[0140] (1)

[0141] in,

[0142] R 7a Selected from H, C 1-8 Alkyl and -SiR3 9a , where R 9a It is C 1-6 Alkyl; preferably, R 7a Selected from H, C 1-6 Alkyl and -SiR3 9a , where R 9a It is C 1-4 Alkyl; preferably, R 7a Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and trimethylsilyl;

[0143] R 7b Selected from H, C 1-8 Alkyl and -SiR3 9b , where R 9b It is C 1-6 Alkyl; preferably, R 7b Selected from H, C 1-6 Alkyl and -SiR3 9a , where R 9b It is C 1-4 Alkyl; preferably, R 7bSelected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and trimethylsilyl;

[0144] R 7c Selected from H, C 1-8 Alkyl and -SiR3 9c , where R 9c It is C 1-6 Alkyl; preferably, R 7c Selected from H, C 1-6 Alkyl and -SiR3 9c , where R 9c It is C 1-4 Alkyl; preferably, R 7c Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and trimethylsilyl;

[0145] R 7d Selected from H, C 1-8 Alkyl and -SiR3 9d , where R 9d It is C 1-6 Alkyl; preferably, R 7d Selected from H, C 1-6 Alkyl and -SiR3 9d , where R 9d It is C 1-4 Alkyl; preferably, R 7d Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and trimethylsilyl;

[0146] R 7e Selected from H, C 1-8 Alkyl and -SiR3 9e , where R 9e C 1-6 Alkyl; preferably, R 7e Selected from H, C 1-6 Alkyl and -SiR3 9e , where R 9e It is C 1-4 Alkyl; preferably, R 7e It is selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl and trimethylsilyl.

[0147] In some embodiments, the cyclopentadienyl ligand is selected from cyclopentadienyl, methylcyclopentadienyl, ethylcyclopentadienyl, isopropylcyclopentadienyl, tert-butylcyclopentadienyl, trimethylsilylcyclopentadienyl, pentamethylcyclopentadienyl, 1,2,4-triisopropylcyclopentadienyl, and 1,2,4-tritert-butylcyclopentadienyl.

[0148] In some embodiments, the cyclopentadienyl ligand is bonded to the metal in an η-1, η-3, or η-5 coordination mode. The Greek letter η followed by a number indicates that the number of consecutive atoms of the same type in the ligand are simultaneously bonded to the metal atom. Preferably, the cyclopentadienyl ligand is bonded to the metal in an η-5 coordination mode.

[0149] In some embodiments, one or more additional ligands are amides (L) of formula (2). 2 ) Ligands:

[0150] (2)

[0151] in,

[0152] R 11 Independently selected from H and C 1-8 Alkyl and -SiR3 12 , where R 12 It is C 1-6 Alkyl; preferably, R 11 Selected from H, C 1-6 Alkyl and -SiR3 12 , where R 12 It is C 1-4 Alkyl; preferably, R 11 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and trimethylsilyl;

[0153] R 11a Independently selected from H and C 1-8 Alkyl and -SiR3 12a , where R 12a It is C 1-6 Alkyl; preferably, R 11a Selected from H, C 1-6 Alkyl and -SiR3 12a , where R 12a It is C 1-4 Alkyl; preferably, R 11a Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and trimethylsilyl;

[0154] Among them, R 11 Or R 11aAt least one of them is not H.

[0155] In some embodiments, the acylamino ligand is selected from dimethylacylamino, diethylacylamino, ethylmethylacylamino, diisopropylacylamino, tert-butylacylamino, and bis(trimethylsilyl)acylamino.

[0156] In some embodiments, one or more additional ligands (L 2 ) is the imide ligand of formula (3):

[0157] =NR 13 (3)

[0158] Among them, R 13 Selected from C 1-8 Alkyl, -SiH3, mono-C 1-8 Alkyl silyl, di-C 1-8 Alkyl silyl and tri-C 1-8 Alkyl silyl; preferably R 13 It is C 1-6 Alkyl, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl and tri-C 1-6 Alkyl silyl; preferably, R 13 Selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, -SiH3, monomethylsilyl, dimethylsilyl, trimethylsilyl, monoethylsilyl, diethylsilyl, triethylsilyl; more preferably, R 13 It is selected from tert-butyl, tert-amyl, trimethylsilyl and triethylsilyl.

[0159] In some embodiments, the imino ligand is selected from methylimino, ethylimino, isopropylimino, isobutylimino, tert-butylimino, tert-pentylimino, and trimethylsilylimino.

[0160] In some embodiments, one or more additional ligands (L 2 ) is the amidine ligand of formula (4) or any of its resonance structures:

[0161] (4)

[0162] in,

[0163] R 14 It is C 1-8 Alkyl; preferably R 14 It is C 1-6 Alkyl; preferably, R 14Selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and cyclohexyl;

[0164] R 15 It is C 1-8 Alkyl; preferably R 15 It is C 1-6 Alkyl; preferably, R 15 Selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and cyclohexyl;

[0165] R 16 Selected from H, C 1-6 Alkyl, mono-C 1-6 Alkylamino and di-C 1-6 Alkylamino; preferably, R 16 Selected from H, C 1-4 Alkyl, mono-C 1-4 Alkylamino and di-C 1-4 Alkylamino; preferably, R 16 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, sec-butyl, isobutyl, dimethylamine, diethylamine, and ethylmethylamine.

[0166] In some embodiments, the amidoyl ligand is selected from N,N'-diethylacetamidine, N,N'-diisopropylacetamidine, N,N'-diisopropylmethylamidine, N,N'-di-tert-butylacetamidine, and N,N'-di-tert-butylmethylamidine.

[0167] In some embodiments, one or more additional ligands (L 2 ) are halide ligands selected from I, Cl, F and Br.

[0168] In some embodiments, one or more additional ligands (L 2 ) is selected from the following alkyl ligands: C 1-10 Alkyl; preferably C 1-6 Alkyl groups; preferably methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, n-pentyl, neopentyl, isopentyl, and hexyl.

[0169] In some embodiments, one or more additional ligands (L 2 ) is the alkoxide ligand of formula (5):

[0170] (5)

[0171] in,

[0172] R 17 Selected from H, C 1-8 Alkyl and aryl; preferably R17 Selected from H or C 1-6 Alkyl; preferably, R 17 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and neopentyl;

[0173] R 18 Selected from H, C 1-8 Alkyl and aryl; preferably R 18 Selected from H or C 1-6 Alkyl; preferably, R 18 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and neopentyl;

[0174] R 19 Selected from H, C 1-8 Alkyl and aryl; preferably R 19 Selected from H or C 1-6 Alkyl; preferably, R 19 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, sec-butyl, isobutyl, n-pentyl, tert-pentyl, isopentyl, and neopentyl.

[0175] In some embodiments, the alkoxide ligand is selected from methanol salts, ethanol salts, isopropoxide salts, tert-butoxide salts, 1-methoxy-2-methyl-2-propoxide salts, 1-dimethylamino-2-propoxide salts, 1-dimethylamino-2-methyl-2-propoxide salts, 1-ethylmethylamino-2-methyl-2-propoxide salts, 1-diethylamino-2-methyl-2-propoxide salts, 1-dimethylamino-2-methyl-2-butoxide salts, 1-ethylmethylamino-2-methyl-2-butoxide salts, 1-diethylamino-2-methyl-2-butoxide salts, pentoxy, tert-pentoxy, and neopentoxy.

[0176] In some embodiments, one or more additional ligands (L 2 ) is the silanoxy ligand of formula (8):

[0177] (8)

[0178] in,

[0179] R 60 Selected from H, C 1-8 Alkyl and aryl; preferably R 60 Selected from H or C 1-6 Alkyl; preferably, R 60 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and neopentyl;

[0180] R61 Selected from H, C 1-8 Alkyl and aryl; preferably, R 61 Selected from H or C 1-6 Alkyl; preferably, R 61 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and neopentyl;

[0181] R 62 Selected from H, C 1-8 Alkyl and aryl; preferably, R 62 Selected from H or C 1-6 Alkyl; preferably, R 62 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, sec-butyl, isobutyl, n-pentyl, tert-pentyl, isopentyl, and neopentyl.

[0182] In some embodiments, the silicon oxide ligand is selected from methylsiloxy, dimethylsiloxy, trimethylsiloxy, dimethylethylsiloxy, diethylmethylsiloxy, triethylsiloxy, isopropylsiloxy, diisopropylsiloxy, triisopropylsiloxy, dimethylisopropylsiloxy, diisopropylmethylsiloxy, triisopropylsiloxy, diethylisopropylsiloxy, diisopropylethylsiloxy, and ethylmethylisopropylsiloxy.

[0183] In some embodiments, one or more additional ligands (L 2 ) is the diketone ligand of formula (6) or any resonance structure thereof:

[0184] (6)

[0185] in,

[0186] R 20 Selected from C 1-8 Alkyl groups, halogenated C 1-8 Alkyl and aryl; preferably R 20 Selected from C 1-6 Alkyl groups, halogenated C 1-6 Alkyl and aryl; preferably, R 20 Selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, cyclopentyl, cyclohexyl, fluoromethyl, difluoromethyl, trifluoromethyl, chloromethyl, dichloromethyl, trichloromethyl, phenyl, and toluyl;

[0187] R 21 Selected from C 1-8 Alkyl groups, halogenated C 1-8Alkyl and aryl; preferably R 21 Selected from C 1-6 Alkyl groups, halogenated C 1-6 Alkyl and aryl; preferably, R 21 It is selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, cyclopentyl, cyclohexyl, fluoromethyl, difluoromethyl, trifluoromethyl, chloromethyl, dichloromethyl, trichloromethyl, phenyl and toluyl.

[0188] In some embodiments, the diketide ligand is selected from acetylacetonate, hexafluoroacetylacetonate, 2,2,6,6-tetramethylheptane-3,5-diketone, and 1,1,1,5,5,5-hexafluoropentane-2,5-diketone.

[0189] In some embodiments, one or more additional ligands (L 2 ) is the diazabutadiene ligand of formula (7):

[0190] (7)

[0191] in,

[0192] R 22 It is C 1-8 Alkyl; preferably R 22 It is C 1-6 Alkyl; preferably, R 22 Selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, and isopentyl;

[0193] R 23 It is C 1-8 Alkyl; preferably R 23 It is C 1-6 Alkyl; preferably, R 23 It is selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, and isopentyl.

[0194] In some embodiments, the diazabutadiene ligand is selected from 1,4-di-tert-butyl-1,4-diaza-1,3-butadiene, 1,4-diisopropyl-1,4-diaza-1,3-butadiene, 1,4-di-sec-butyl-1,4-diaza-1,3-butadiene and 1,4-di-tert-pentyl-1,4-diaza-1,3-butadiene.

[0195] In some embodiments, one or more additional ligands (L 2 ) is the amidation ligand of formula (9) or any resonance structure thereof:

[0196] (9)

[0197] in,

[0198] R 63 Selected from H, C 1-8 Alkyl and aryl; preferably R 63 Selected from H, C 1-6 Alkyl and aryl; preferably, R 63 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and toluyl;

[0199] R 64 Selected from H, C 1-8 Alkyl and aryl; preferably R 64 Selected from H, C 1-6 Alkyl and aryl; preferably, R 64 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and toluyl.

[0200] In some embodiments, one or more additional ligands (L 2 () is selected from the following alkylamino ligands: tri-C 1-6 Alkylamino; preferably, the alkylamino ligand is selected from tri-C 1-4 Alkylamino; preferably, the alkylamino ligand is selected from trimethylamino, triethylamino and ethyldimethylamino.

[0201] In some embodiments, one or more additional ligands (L 2 ) is the oxygen ligand of the formula =O.

[0202] In some embodiments, one or more additional ligands (L 2 ) is the formula H - Hydrogenated ligands.

[0203] In some embodiments, one or more additional ligands (L 2 ) is the guanidinyl ligand of formula (10) or any resonance structure thereof:

[0204] (10)

[0205] in,

[0206] R 65 Selected from H, C 1-6 Alkyl; preferably R 65 Selected from H, C 1-4 Alkyl; preferably, R 65 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, sec-butyl, and isobutyl;

[0207] R 66 Selected from H, C 1-6 Alkyl; preferably R 66 Selected from H, C 1-4 Alkyl; preferably, R 66 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, sec-butyl, and isobutyl;

[0208] R 67 Selected from H, C 1-6 Alkyl; preferably R 67 Selected from H, C 1-4 Alkyl; preferably, R 67 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, sec-butyl, and isobutyl;

[0209] R 68 Selected from H, C 1-6 Alkyl; preferably R 68 Selected from H, C 1-4 Alkyl; preferably, R 68 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, sec-butyl, and isobutyl.

[0210] In some embodiments, the guanidino ligand is selected from N,N'-diisopropyl-2-dimethylaminoguanidino, N,N'-diisopropyl-2-diethylaminoguanidino, N,N'-diisopropyl-2,2-ethylmethylaminoguanidino, N,N'-di-tert-butyl-2-dimethylaminoguanidino, N,N'-di-tert-butyl-2-diethylaminoguanidino, and N,N'-di-tert-butyl-2,2-ethylmethylaminoguanidino.

[0211] In some embodiments, one or more additional ligands (L 2 The ligands are selected from amide ligands, alkoxide ligands, silanoxy ligands, amidine ligands, and cyclopentadienyl ligands; preferably L... 2 It is selected from dimethylamino, diethylamino, ethylmethylamino, methoxy, ethoxy, isopropoxy, tert-butoxy, tert-pentoxy, trimethylsilyloxy or triethylsilyloxy, N,N'-diisopropylacetamidine, N,N'-di-tert-butylacetamidine, N,N'-diisopropylmethamidine, N,N'-di-tert-butylmethamidine, cyclopentadienyl, methylcyclopentadienyl, ethylcyclopentadienyl, isopropylcyclopentadienyl, tert-butylcyclopentadienyl, trimethylsilylcyclopentadienyl and pentamethylcyclopentadienyl.

[0212] In some embodiments, the deposition precursor comprises according to M(L) 1 ) x (L 2 ) y The structure of or is composed of, wherein:

[0213] x is an integer selected from 1, 2, or 3;

[0214] y is an integer selected from 1, 2, or 3;

[0215] Where x + y equals 4;

[0216] L 2 As disclosed in this article; preferred L 2 Selected from cyclopentadienyl ligands, alkyl ligands, and halide ligands, and

[0217] M is selected from Group 4 metals, V, or Mo.

[0218] In some embodiments, the deposition precursor comprises or consists of a structure according to formula (IIa) or (IIb):

[0219] (IIa); (IIb)

[0220] in,

[0221] M is selected from Group 4 metals, V, or Mo;

[0222] R 1 R 2 and R 3 As described in this article.

[0223] In some embodiments, the deposition precursor comprises according to M(L) 1 ) x (L 2 ) y The structure of or is composed of, wherein:

[0224] x is an integer selected from 1, 2, 3 or 4;

[0225] y is an integer selected from 1, 2, 3, or 4;

[0226] Where x+y equals 2, 3, 4, 5, 6, 7 or 8;

[0227] L 2 As disclosed herein; preferably, L 2 Selected from amide ligands, alkoxide ligands, silanoxy ligands, amidine ligands, and cyclopentadienyl ligands; preferably L 2Selected from dimethylamino, diethylamino, ethylmethylamino, methoxy, ethoxy, isopropoxy, tert-butoxy, tert-pentoxy, trimethylsilyloxy or triethylsilyloxy, N,N'-diisopropylacetamidine, N,N'-di-tert-butylacetamidine, N,N'-diisopropylformamidinyl, N,N'-di-tert-butylformamidinyl, cyclopentadienyl, methylcyclopentadienyl, ethylcyclopentadienyl, isopropylcyclopentadienyl, tert-butylcyclopentadienyl, trimethylsilylcyclopentadienyl and pentamethylcyclopentadienyl; and

[0228] M is selected from Group 4, Group 5, or Group 6 metals.

[0229] In some embodiments, the deposition precursor comprises according to M(L) 1 (L) 2 )2 or its dimer structure or composed of it,

[0230] Among them, L 2 As disclosed in this article; and

[0231] M is selected from Al, In, Ga, B, Si, Ge, lanthanides, and rare earth metals.

[0232] In some embodiments, the deposition precursor comprises or is composed of a structure according to formula (IIc) or (IId):

[0233] (IIc); (IId)

[0234] in,

[0235] L 2 As disclosed in this article; and

[0236] M is selected from Al, In, Ga, and rare earth metals;

[0237] R 1 R 2 and R 3 As described in this article.

[0238] In some embodiments, the deposition precursor comprises according to M(L) 1 ) x (O) y The structure or composition thereof, wherein,

[0239] (i) M is a Group 5 metal, x=3 and y=1; or

[0240] (ii) M is a Group 6 metal, x=2 and y=2.

[0241] In some embodiments, the deposition precursor comprises or is composed of a structure according to formula (IIe) or (IIIf):

[0242] (IIe); (IIf)

[0243] in,

[0244] (i) M is a Group 5 metal, x=3 and y=1; or

[0245] (ii) M is a Group 6 metal, x=2 and y=2;

[0246] R 1 R 2 and R 3 As described in this article.

[0247] In some embodiments, the deposition precursor comprises according to M(L) 1 ) x (NR 13 ) y The structure or composition thereof, wherein,

[0248] R 13 Selected from C 1-8 Alkyl, -SiH3, mono-C 1-8 Alkyl silyl, di-C 1-8 Alkyl silyl and tri-C 1-8 Alkyl silyl; preferably, R 13 Selected from tert-butyl, n-pentyl, neopentyl, -SiH3, and SiMe3;

[0249] (i) M is a Group 5 metal, x=3 and y=1; or

[0250] (ii) M is a Group 6 metal, x=2 and y=2.

[0251] In some embodiments, the deposition precursor comprises or consists of a structure according to formula (IIg) or (IIh):

[0252] (IIg); (IIh)

[0253] in,

[0254] R 1 R 2 and R 3 As described in this article;

[0255] R 13 Selected from C 1-8 Alkyl, SiH3, mono-C 1-8Alkyl silyl, di-C 1-8 Alkyl silyl and tri-C 1-8 Alkyl silyl; preferably, R 13 Selected from tert-butyl, n-pentyl, neopentyl, SiH3, and SiMe3;

[0256] (i) M is a Group 5 metal, x=3 and y=1; or

[0257] (ii) M is a Group 6 metal, x=2 and y=2.

[0258] In some embodiments, the present invention provides a composition comprising a deposition precursor having a purity of at least 95.0% (by weight), as determined by analytical methods, such as... 1 H NMR, 13 The method comprises one or more of the following: C NMR, gas chromatography (GC), gas chromatography-mass spectrometry (GC-MS), inductively coupled plasma mass spectrometry (ICP-MS), high-performance liquid chromatography (HPLC), atomic emission spectrometry, elemental analysis, or other analytical methods known in the art. Preferably, the composition comprises a deposition precursor with a purity of at least 96.0%, or at least 97.0%, or at least 98.0%, or at least 99.0%, or at least 99.5%, or at least 99.9%.

[0259] In some embodiments, the composition of the present invention comprises up to 5.0% by weight of halogen impurities based on the total weight of the composition; preferably up to 4.0% by weight of halogen impurities; preferably up to 3.0% by weight of halogen impurities; preferably up to 2.0% by weight of halogen impurities; preferably up to 1.0% by weight of halogen impurities; preferably up to 0.5% by weight of halogen impurities; preferably up to 0.1% by weight of halogen impurities; preferably up to 100 ppm of halogen impurities based on the total weight of the composition; preferably up to 10 ppm of halogen impurities.

[0260] In some embodiments, the composition of the present invention contains up to 1.0% by weight of a metallic impurity based on the total weight of the composition; preferably up to 0.1% by weight of a metallic impurity; preferably up to 100 ppm by weight of a metallic impurity based on the weight of the composition; preferably up to 10 ppm of a metallic impurity; preferably up to 1 ppm of a metallic impurity; preferably up to 100 ppb of a metallic impurity; preferably up to 10 ppb of a metallic impurity.

[0261] Another aspect of the invention relates to a vapor delivery container comprising a composition according to the invention, wherein the vapor delivery container is configured and arranged to supply vapor of a deposition precursor to the reaction chamber of a vapor deposition apparatus.

[0262] In some embodiments, the vapor delivery container is formed of a material that does not react with the composition used to form a metal-containing layer on a semiconductor substrate. In some embodiments, the vapor delivery container may also comply with U.S. Department of Transportation (DOT) regulations, such as 49 CFR §178 (2021). In some embodiments, the vapor delivery container is formed of stainless steel (e.g., 316, 316L, 304, or an alloy of 304L).

[0263] A vapor delivery container may include an outer wall that surrounds a cavity for storing a composition for forming a metal-containing layer on a semiconductor substrate, and a gas outlet for allowing vapor of the deposition precursor to exit the cavity. The gas outlet may be located in the outer wall of the vapor delivery container and may communicate with the cavity of the vapor delivery container, and may have at least one valve located thereon to fluidly connect or disconnect the cavity from the external environment.

[0264] In some embodiments, in addition to a gas outlet, the vapor delivery container includes one or more other fluid inlets or outlets. For example, the vapor delivery container may include a fluid inlet located in the outer wall of the vapor delivery container and in communication with a cavity of the vapor delivery container, and having at least one valve thereon for filling the vapor delivery container with a composition for forming a metal-containing layer on a semiconductor substrate. Alternatively or additionally, the vapor delivery container may include a fluid inlet located in the outer wall of the vapor delivery container and in communication with a cavity of the vapor delivery container, and having at least one valve thereon for allowing carrier gas to flow into the cavity of the container, either on the surface of the composition or through the composition.

[0265] In some embodiments, the vapor delivery container further includes one or more probe components, which may include one or more temperature sensors and / or one or more pressure sensors and / or one or more level sensors.

[0266] In some embodiments, the vapor delivery container further includes one or more heat transfer elements, such as fins, rods, beads, etc., to facilitate heat transfer from the container wall to the film-forming composition within the cavity and vice versa. The one or more heat transfer elements may be arranged in a serpentine or radial path to hold the composition used to form a metal-containing layer on a semiconductor substrate within the cavity, and in some cases, to guide a carrier gas flow through or through the composition. Such a configuration is particularly suitable for delivering vapors of low-volatility liquid and solid compositions.

[0267] Another aspect of the present invention relates to a vapor deposition apparatus, comprising:

[0268] - A reaction chamber, which is constructed and arranged to at least hold a semiconductor substrate;

[0269] - A vapor delivery container comprising a composition containing a deposition precursor, wherein the vapor delivery container is configured and arranged to provide vapor of the deposition precursor;

[0270] - A precursor distribution and removal system configured to supply vapor of the deposition precursor from a vapor delivery vessel to a reaction chamber and to remove vapor of the deposition precursor from the reaction chamber; and

[0271] - A sequence controller operatively connected to a precursor dispensing and removal system and including a memory set with a program configured to control the flow of a composition containing a deposition precursor from a vapor delivery vessel to a reaction chamber by activating the precursor dispensing and removal system during one or more cycles; thereby, as a result of the cycle, a layer is formed on a semiconductor substrate in the reaction chamber;

[0272] The sedimentary precursor includes:

[0273] - The central atom or ion (M); and

[0274] - At least one phosphonium imide ligand (L 1 ).

[0275] In some embodiments, at least one phosphonium imide ligand (L 1 It has the structure according to formula (I):

[0276] (I)

[0277] in,

[0278] R 1 Selected from H, hydrocarbon groups, amino groups, and silyl groups;

[0279] R 2 Selected from H, hydrocarbon groups, amino groups, and silyl groups;

[0280] R 3 Selected from H, hydrocarbon groups, amino groups, and silyl groups;

[0281] The condition is R 1 R 2 and R 3 At least one of them is not H.

[0282] The phosphonimide ligand (L) having the structure according to formula (I) has been described above. 1 Another embodiment of ).

[0283] In some embodiments, the device may further include a reactant source configured and arranged to provide vapors of reactants; wherein a precursor distribution and removal system is further configured to provide vapors of reactants from the reactant source to a reaction chamber; wherein a program stored in a memory is further configured to control the flow of reactants from the reactant source to the reaction chamber during one or more cycles.

[0284] In some embodiments, a composition comprising a deposition precursor and one or more optional reactants is supplied from a temperature-controlled container to a reaction chamber. In some embodiments, the temperature-controlled container is configured to cool the composition and / or optional reactants.

[0285] In some embodiments, the reactants are selected from nitride reactants, oxide reactants, phosphide reactants, carbide reactants, boride reactants, reducing agents, sulfide reactants, and combinations thereof.

[0286] In some embodiments, the reactants are nitride reactants, wherein the nitride reactants are selected from NH3, N2H4, hydrazine, alkylamine, N2 plasma, NH3 plasma and N2 / H2 plasma.

[0287] As used in this article, nitride reactants are reagents that can generate metal nitrides when in contact with deposition precursors.

[0288] A suitable example of hydrazine is a compound of the following formula:

[0289] ,

[0290] in,

[0291] R 24 Selected from H, C 1-8 Alkyl, C 3-10 Cycloalkyl and aryl; preferably R 24 Selected from H, C 1-6 Alkyl and aryl; preferably, R 24 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, cyclopentyl, cyclohexyl, phenyl, and naphthyl;

[0292] R 25 Selected from H, C 1-8 Alkyl, C 3-10 Cycloalkyl and aryl; preferably R 25 Selected from H, C 1-6 Alkyl and aryl; preferably, R 25 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, cyclopentyl, cyclohexyl, phenyl, and naphthyl;

[0293] R26 Selected from H, C 1-8 Alkyl, C 3-10 Cycloalkyl and aryl; preferably R 26 Selected from H, C 1-6 Alkyl and aryl; preferably, R 26 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, cyclopentyl, cyclohexyl, phenyl, and naphthyl;

[0294] R 27 Selected from H, C 1-8 Alkyl, C 3-10 Cycloalkyl and aryl; preferably R 27 Selected from H, C 1-6 Alkyl and aryl; preferably, R 27 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, cyclopentyl, cyclohexyl, phenyl, and naphthyl.

[0295] Other non-limiting examples of suitable hydrazines include: tert-butylhydrazine, 1,1-dimethylhydrazine, methylhydrazine, and phenylhydrazine.

[0296] Suitable examples of alkylamines are compounds of the following formula:

[0297] ,

[0298] in,

[0299] R 28 It is C 1-8 Alkyl; preferably R 28 It is C 1-6 Alkyl; preferably, R 28 It is selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl.

[0300] R 28a Is it H or C? 1-8 Alkyl; preferably R 28a Is it H or C? 1-6 Alkyl; preferably, R 28a Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl.

[0301] Other non-limiting examples of suitable alkylamines include tert-butylamine, isobutylamine, and tert-amylamine.

[0302] In some embodiments, the reactants are oxide reactants, wherein the oxide reactants are selected from H2O, O2, O3, H2O2, N2O, NO2, N2O4, pyridine N-oxide, and O2 plasma.

[0303] As used in this article, oxide reactants are reagents that can produce metal oxides when in contact with deposition precursors.

[0304] In some embodiments, the reactants are phosphide reactants selected from phosphine, phosphorus halides, phosphorus oxyhalides, organophosphates, organophosphites, aminophosphine, alkylphosphine, and silylphosphine.

[0305] As used in this article, phosphide reactants are reagents that can produce metal phosphides when in contact with deposition precursors.

[0306] Suitable examples of phosphorus halides include compounds of the formula PX3 or PX5, where X is fluorine, chlorine, bromine, or iodine. Suitable, but non-limiting, examples of phosphorus halides include, for example, phosphorus trichloride (PCl3), phosphorus pentachloride (PCl5), phosphorus tribromide (PBr3), and phosphorus pentabromide (PBr5).

[0307] Suitable examples of phosphorus oxyhalides include compounds of the formula POX3, where X is fluorine, chlorine, bromine, or iodine. Suitable but non-limiting examples of phosphorus oxyhalides include, for example, phosphorus oxychloride (POCl3) and phosphorus oxybromide (POBr3).

[0308] Suitable examples of organophosphates include compounds of the following formula:

[0309] ,

[0310] in,

[0311] R 32 Selected from H, C 1-8 Alkyl and aryl; preferably R 32 Selected from H, C 1-6 Alkyl and aryl; preferably, R 32 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0312] R 33 Selected from H, C 1-8 Alkyl and aryl; preferably R 33 Selected from H, C 1-6 Alkyl and aryl; preferably, R 33 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0313] R34 Selected from H, C 1-8 Alkyl and aryl; preferably R 34 Selected from H, C 1-6 Alkyl and aryl; preferably, R 34 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0314] Among them, R 32 R 33 or R 34 Only one of them is hydrogen.

[0315] Suitable, but not limiting, examples of organophosphates include trimethyl phosphate (PO[OMe]3) and triethyl phosphate (PO[OEt3]).

[0316] Suitable examples of organic phosphites include compounds of the following formula:

[0317] ,

[0318] in,

[0319] R 35 Selected from H, C 1-8 Alkyl, -SiR3 35a and aryl, of which R 35a It is C 1-6 Alkyl; preferably, R 35 Selected from H, C 1-6 Alkyl, -SiR3 35a and aryl, of which R 35a It is C 1-6 Alkyl; preferably, R 35 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, trimethylsilyl, phenyl, and naphthyl;

[0320] R 36 Selected from H, C 1-8 Alkyl, -SiR3 36a and aryl, of which R 36a It is C 1-6 Alkyl; preferably, R 36 Selected from H, C 1-6 Alkyl, -SiR3 37a and aryl, of which R 36a It is C 1-6 Alkyl; preferably, R 36 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, trimethylsilyl, phenyl, and naphthyl;

[0321] R 37 Selected from H, C 1-8 Alkyl, -SiR3 37a and aryl, of which R 37a It is C 1-6 Alkyl; preferably, R 37 Selected from H, C 1-6 Alkyl, -SiR3 37a and aryl, of which R 37a It is C 1-6 Alkyl; preferably, R 37 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, trimethylsilyl, phenyl, and naphthyl;

[0322] Among them, R 35 R 36 or R 37 Only one of them is hydrogen.

[0323] Suitable, but not limiting, examples of organic phosphites include trimethyl phosphite (P[OMe]3) and triethyl phosphite (P[OEt]3).

[0324] Suitable examples of aminophosphine include compounds of the following formula:

[0325] ,

[0326] in,

[0327] Each R 38 Independently selected from H and C 1-8 Alkyl and aryl; preferably, each R 38 Independently selected from H and C 1-6 Alkyl and aryl; preferably, each R 35 It is independently selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0328] Each R 39 Independently selected from H and C 1-8 Alkyl and aryl; preferably, each R 39 Independently selected from H and C 1-6 Alkyl and aryl; preferably, each R 39 It is independently selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0329] Each R 40 Independently selected from H and C 1-8Alkyl and aryl; preferably, each R 40 Independently selected from H and C 1-6 Alkyl and aryl; preferably, each R 40 It is independently selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl and naphthyl.

[0330] Suitable but non-limiting examples of aminophosphine include tris(dimethylamino)phosphine (P[NMe2]3), tris(ethylmethylamino)phosphine (P[NEtMe]3), and tris(diethylamino)phosphine (P[NEt2]3).

[0331] Suitable examples of alkylphosphines include compounds of the following formula:

[0332] ,

[0333] in,

[0334] R 41 Selected from H and C 1-8 Alkyl; preferably R 41 Selected from H and C 1-6 Alkyl; preferably R 41 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, and isopentyl;

[0335] R 42 Selected from H and C 1-8 Alkyl; preferably R 42 Selected from H and C 1-6 Alkyl; preferably R 42 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, and isopentyl;

[0336] R 43 Selected from H and C 1-8 Alkyl; preferably R 43 Selected from H and C 1-6 Alkyl; preferably R 43 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, and isopentyl;

[0337] Among them, R 41 R 42 Or R 43 At least one of them is not hydrogen.

[0338] Suitable, but not limiting, examples of alkylphosphines include tert-butylphosphine (C4H9PH2) and triethylphosphine (P[CH2CH3]3).

[0339] Suitable examples of silylphosphine include compounds of the following formula:

[0340] ,

[0341] in,

[0342] R 44 Is it H or Si(R)? 44a )3, where each R 44a Independently selected from H, halogen, C 1-8 Alkyl and aryl; preferably, each R 44a Independently selected from H, halogen, C 1-6 Alkyl and aryl; preferably, each R 44a Independently selected from H, F, Cl, Br, I, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0343] R 45 Is it H or Si(R)? 45a )3, where each R 45a Independently selected from H, halogen, C 1-8 Alkyl and aryl; preferably, each R 45a Independently selected from H, halogen, C 1-6 Alkyl and aryl; preferably, each R 45a Independently selected from H, F, Cl, Br, I, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0344] R 46 Is it H or Si(R)? 46a )3, where each R 46a Independently selected from H, halogen, C 1-8 Alkyl and aryl; preferably, each R 46a Independently selected from H, halogen, C 1-6 Alkyl and aryl; preferably, each R 46a Independently selected from H, F, Cl, Br, I, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0345] Among them, R 44 R 45 or R 46 At least one of them is not H.

[0346] In some embodiments, silylphosphine comprises compounds of the following formula:

[0347] ,

[0348] Among them, each R 44a R 45a and R 46a As defined above.

[0349] Suitable, but non-limiting, examples of silylphosphine include tris(trimethylsilyl)phosphine (P[SiMe3]3) and tris(silyl)phosphine (P[SiH3]3).

[0350] In some embodiments, the reactants are carbide reactants, wherein the carbide reactants are selected from alkyl iodine, aryl iodine, alkyl bromide, aryl bromide, acetylene, propargyl chloride, propargyl bromide, propargyl iodine, allyl chloride, allyl bromide, allyl iodine and cyclodiene.

[0351] As used in this article, carbide reactants are reagents that can produce metal carbides when in contact with deposition precursors.

[0352] As used herein, the term "alkyl iodine" refers to C 1-8 Alkyl group, wherein one, two, or three hydrogen atoms are each replaced by an iodine atom; preferably C. 1-6 Alkyl; preferably C 1-4 Alkyl. Other non-limiting examples of suitable alkyl iodides include iodomethane, diiodomethane, iodoethane, 1,2-diiodoethane, and 1-iodobutane.

[0353] As used herein, the term "aryl iodine" refers to an aryl group in which one, two, three, four, five, or six hydrogen atoms are each replaced by an iodine atom; preferably three hydrogen atoms; preferably two hydrogen atoms; preferably one hydrogen atom. Other non-limiting examples of suitable aryl iodines include iodobenzene, 1,2-diiodobenzene, 1,3-diiodobenzene, 1,4-diiodobenzene, 1,2,3-triiodobenzene, 1,2,4-triiodobenzene, 1,3,5-triiodobenzene, 1,2,3,4-tetraiodobenzene, 1,2,3,5-tetraiodobenzene, 1,2,4,5-tetraiodobenzene, pentaiodobenzene, and hexaiodobenzene.

[0354] As used herein, the term "alkyl bromide" refers to C 1-8 Alkyl group, wherein one, two, or three hydrogen atoms are each replaced by a bromine atom; preferably C 1-6 Alkyl; preferably C 1-4 alkyl.

[0355] As used herein, the term "aryl bromide" refers to an aryl group in which one, two, three, four, five, or six hydrogen atoms are each replaced by a bromine atom; preferably three hydrogen atoms; preferably two hydrogen atoms; preferably one hydrogen atom.

[0356] Other non-limiting examples of suitable alkyl bromides include: bromoethane, 1,2-dibromoethane, and 1-bromobutane.

[0357] Other non-limiting examples of suitable aryl bromides include bromobenzene, 1,2-dibromobenzene, 1,3-dibromobenzene, 1,4-dibromobenzene, 1,2,3-tribromobenzene, 1,2,4-tribromobenzene, 1,3,5-tribromobenzene, 1,2,3,4-tetrabromobenzene, 1,2,3,5-tetrabromobenzene, 1,2,4,5-tetrabromobenzene, pentabromobenzene, and hexabromobenzene.

[0358] In some embodiments, the reactants are boride reactants, wherein the boride reactants are selected from BF3, BCl3, BBr3, BI3, boranes, and compounds of the following formula:

[0359] ,

[0360] in,

[0361] R 50 Selected from halogens, C 1-8 Alkyl and aryl; preferably R 50 Selected from halogens, C 1-6 Alkyl and aryl; preferably R 50 Selected from halogens, C 1-4 Alkyl and aryl; preferably, R 50 Selected from F, Cl, Br, I, C 1-6 Alkyl and phenyl; preferably, R 50 Selected from F, Cl, Br, I, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and phenyl;

[0362] R 51 Selected from halogens, C 1-8 Alkyl and aryl; preferably R 51 Selected from halogens, C 1-6 Alkyl and aryl; preferably R 51 Selected from halogens, C 1-4 Alkyl and aryl; preferably, R 51 Selected from F, Cl, Br, I, C 1-6 Alkyl and phenyl; preferably, R 51 Selected from F, Cl, Br, I, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and phenyl;

[0363] R 52 Selected from halogens, C 1-8 Alkyl and aryl; preferably R 52 Selected from halogens, C 1-6 Alkyl and aryl; preferably R 52Selected from halogens, C 1-4 Alkyl and aryl; preferably, R 52 Selected from F, Cl, Br, I, C 1-6 Alkyl and phenyl; preferably, R 52 Selected from F, Cl, Br, I, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and phenyl;

[0364] R 53 Selected from halogens, C 1-8 Alkyl and aryl; preferably R 53 Selected from halogens, C 1-6 Alkyl and aryl; preferably R 53 Selected from halogens, C 1-4 Alkyl and aryl; preferably, R 53 Selected from F, Cl, Br, I, C 1-6 Alkyl and phenyl; preferably, R 53 Selected from F, Cl, Br, I, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and phenyl;

[0365] R 54 Selected from halogens, C 1-8 Alkyl and aryl; preferably R 54 Selected from halogens, C 1-6 Alkyl and aryl; preferably R 54 Selected from halogens, C 1-4 Alkyl and aryl; preferably, R 54 Selected from F, Cl, Br, I, C 1-6 Alkyl and phenyl; preferably, R 54 Selected from F, Cl, Br, I, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and phenyl;

[0366] R 55 Selected from halogens, C 1-8 Alkyl and aryl; preferably R 55 Selected from halogens, C 1-6 Alkyl and aryl; preferably R 55 Selected from halogens, C 1-4 Alkyl and aryl; preferably, R 55 Selected from F, Cl, Br, I, C 1-6 Alkyl and phenyl; preferably, R 55 Selected from F, Cl, Br, I, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, and phenyl.

[0367] As used in this article, boride reactants are reagents that can produce metal borides when in contact with deposition precursors.

[0368] Suitable examples of cycloborazines are compounds such as cycloborazine, trichlorocycloborazine, tribromocycloborazine, and 1,3,5-trimethylcycloborazine.

[0369] Suitable examples of boranes are compounds selected from the following: BH3, B2H6, B 10 H 14 B(CH3)3, B(CH2CH3)3, B(OCH3)3, B[N(CH3)2]3, pinacolborane and formula R 29 Compounds of BH3, among which...

[0370] R 29 Selected from NH3, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, tri-C 1-6 Alkylamino, -S(C 1-6 Alkyl)2, heterocyclic, heteroalkyl and C-shaped 1-4 Alkyl-substituted heteroaryl; preferably, R 29 Selected from NH3, mono-C 1-4 Alkylamino, di-C 1-4 Alkylamino, tri-C 1-4 Alkylamino, -S(C 1-4 Alkyl)2, heterocyclic, heteroalkyl and C-shaped 1-4 Alkyl-substituted heteroaryl; preferably, R 29 Selected from NH3, trimethylamine, triethylamine, dimethylamine, diethylamine, di-tert-butylamine, methylamine, ethylamine, tert-butylamine, tetrahydrofuran, pyridine, and 2-methylpyridine.

[0371] Other non-limiting examples of suitable boranes include: BH3[S(CH3)2], ammonia-borane, trimethylamine-borane, triethylamine-borane, pyridine-borane, dimethylamine-borane, 2-methylpyridine-borane, tert-butylamine-borane, and tetrahydrofuran-borane.

[0372] In some embodiments, the reactant is a reducing agent, wherein the reducing agent is selected from H2, H2 plasma, N2 / H2 plasma, N2H4, hydrazine, formic acid, formalin, borane, SiH4, Si2H6, H2Si(SiH3)2, silane and cyclic dienes.

[0373] A suitable example of hydrazine is a compound of the following formula:

[0374] ,

[0375] in,

[0376] R 24 Selected from H, C 1-8 Alkyl and aryl; preferably R 24 Selected from H, C 1-6 Alkyl and aryl; preferably, R 24 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0377] R 25 Selected from H, C 1-8 Alkyl and aryl; preferably R 25 Selected from H, C 1-6 Alkyl and aryl; preferably, R 25 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0378] R 26 Selected from H, C 1-8 Alkyl and aryl; preferably R 26 Selected from H, C 1-6 Alkyl and aryl; preferably, R 26 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl;

[0379] R 27 Selected from H, C 1-8 Alkyl and aryl; preferably R 27 Selected from H, C 1-6 Alkyl and aryl; preferably, R 27 Selected from H, methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl.

[0380] Suitable examples of boranes are compounds selected from the following: BH3, B2H6, B 10 H 14 B(CH3)3, B(CH2CH3)3, B(OCH3)3, B[N(CH3)2]3, pinacolborane and formula R 29 Compounds of BH3, among which...

[0381] R 29 Selected from NH3, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, tri-C 1-6 Alkylamino, -S(C 1-6 Alkyl)2, heterocyclic, heteroalkyl and C-shaped 1-4 Alkyl-substituted heteroaryl; preferably, R29 Selected from NH3, mono-C 1-4 Alkylamino, di-C 1-4 Alkylamino, tri-C 1-4 Alkylamino, -S(C 1-4 Alkyl)2, heterocyclic, heteroalkyl and C-shaped 1-4 Alkyl-substituted heteroaryl; preferably, R 29 Selected from NH3, trimethylamine, triethylamine, dimethylamine, diethylamine, di-tert-butylamine, methylamine, ethylamine, tert-butylamine, tetrahydrofuran, pyridine, and 2-methylpyridine.

[0382] Other non-limiting examples of suitable boranes include: BH3[S(CH3)2], ammonia-borane, trimethylamine-borane, triethylamine-borane, pyridine-borane, dimethylamine-borane, 2-methylpyridine-borane, tert-butylamine-borane, and tetrahydrofuran-borane.

[0383] Suitable examples of silanes are compounds with the following formula:

[0384] ,

[0385] in,

[0386] R 30 Selected from H, halogens, C 1-6 Alkyl, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino and SiH3; preferably, R 30 Selected from H, halogens, C 1-4 Alkyl mono-C 1-4 Alkylamino, di-C 1-4 Alkylamino and SiH3; preferably, R 30 Selected from H, F, Cl, Br, I, dimethylamino, diethylamino, diisopropylamino, di-tert-butylamino, methylamino, ethylamino, tert-butylamino, di-sec-butylamino and SiH3;

[0387] R 30a Selected from H, halogens, C 1-6 Alkyl, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, tri-C 1-6 Alkylamino and SiH3; preferably, R 30a Selected from H, halogens, C 1-4 Alkyl mono-C 1-4 Alkylamino, di-C 1-4 Alkylamino, tri-C 1-4 Alkylamino and SiH3; preferably, R 30aSelected from H, F, Cl, Br, I, dimethylamino, diethylamino, diisopropylamino, di-tert-butylamino, methylamino, ethylamino, tert-butylamino, di-sec-butylamino and SiH3;

[0388] R 31 Selected from H, halogens, C 1-6 Alkyl, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, tri-C 1-6 Alkylamino and SiH3; preferably, R 31 Selected from H, halogens, C 1-4 Alkyl mono-C 1-4 Alkylamino, di-C 1-4 Alkylamino, tri-C 1-4 Alkylamino and SiH3; preferably, R 31 Selected from H, F, Cl, Br, I, dimethylamino, diethylamino, diisopropylamino, di-tert-butylamino, methylamino, ethylamino, tert-butylamino, di-sec-butylamino and SiH3;

[0389] R 31a Selected from H, halogens, C 1-6 Alkyl, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, tri-C 1-6 Alkylamino and SiH3; preferably, R 31a Selected from H, halogens, C 1-4 Alkyl mono-C 1-4 Alkylamino, di-C 1-4 Alkylamino, tri-C 1-4 Alkylamino and SiH3; preferably, R 31a Selected from H, F, Cl, Br, I, dimethylamino, diethylamino, diisopropylamino, di-tert-butylamino, methylamino, ethylamino, tert-butylamino, di-sec-butylamino and SiH3.

[0390] In some embodiments, R 30 R 30a R 31 or R 31a At least two of them are H.

[0391] A suitable example of a silane is Si. x H y Compounds, wherein x is an integer selected from 1, 2, 3, 4, 5, or 6, and y is an integer selected from 0, 2x+2, or 2x. Those skilled in the art will understand that formula Si... x H y Silanes include straight-chain, branched, and cyclic silanes.

[0392] Other non-limiting examples of suitable silanes include: bis(diethylamino)silane, diisopropylaminosilane, silane, diethylsilane, propane, cyclohexylsilane, neopentylsilane, and disec-butylaminosilane.

[0393] As used herein, the term "cyclic diene" refers to a cyclic group having two double bonds, comprising 3 to 12 carbon atoms, preferably 3 to 9 carbon atoms, more preferably 3 to 7 carbon atoms; even more preferably 3 to 6 carbon atoms; and may have at least one heteroatom selected from N, O, and S, preferably at least one N atom. The cyclic diene according to the invention may be substituted with one or more substituents selected from C. 1-6 Alkyl, halogen, C 1-6 Alkoxy, C 1-6 Alkylamino, di-C 1-6 Alkylamino, phenyl and tri-C 1-6 Alkylsilyl. Other non-limiting examples of suitable cyclic dienes include: 1,3-cyclohexadiene, 1,4-cyclohexadiene, 1-methyl-1,4-cyclohexadiene, 1-methyl-1,3-cyclohexadiene, 2-methyl-1,3-cyclohexadiene, 3,6-bis(trimethylsilyl)-1,4-cyclohexadiene, 1-methyl-3,6-bis(trimethylsilyl)-1,4-cyclohexadiene, 9,10-dihydroanthracene, and 1,4-dihydro-1,4-bis(trimethylsilyl)pyrazine.

[0394] In some embodiments, the reactants are sulfide reactants, wherein the sulfide reactants are selected from H2S, S8, S2Cl2, thiols, dithiols, bis(trimethylsilyl) sulfides, CS2, and disulfides.

[0395] As used in this article, sulfide reactants are reagents that can produce metal sulfides when in contact with deposition precursors.

[0396] Suitable examples of thiols include formula R 47 SH compounds, among which,

[0397] R 47 Selected from C 1-8 Alkyl and aryl; preferably R 47 Selected from C 1-6 Alkyl and aryl; preferably, R 47 It is selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl.

[0398] Other non-limiting examples of suitable thiols include tert-butylthiols, 1-hexanethiols, tert-amylthiols, and thiophenols.

[0399] As used herein, the term "dithiol" refers to a C-type dithiol in which two hydrogen atoms are replaced by thiol (-SH) groups. 1-8 Alkyl; preferably C 1-6 Alkyl; preferably C 1-4 Alkyl groups. Other non-limiting examples of suitable dithiols include 1,2-ethanedithiol, 1,3-propanedithiol, and 1,4-butanedithiol.

[0400] Suitable examples of disulfides include formula R 47 -SSR 48 The compounds, in which,

[0401] R 47 Selected from C 1-8 Alkyl and aryl; preferably, each R 47 Selected from C 1-6 Alkyl and aryl; preferably R 47 Selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl; R 48 Selected from C 1-8 Alkyl and aryl; preferably each R 48 Selected from C 1-6 Alkyl and aryl; preferably, R 48 It is selected from methyl, ethyl, n-propyl, isopropyl, tert-butyl, n-butyl, isobutyl, sec-butyl, n-pentyl, tert-pentyl, isopentyl, phenyl, and naphthyl.

[0402] Other non-limiting examples of suitable disulfides include dimethyl disulfide, diethyl disulfide, and di-tert-butyl disulfide.

[0403] In some embodiments, the cycle of the method disclosed herein may optionally include a dopant pulse, wherein at least a portion of the layer is contacted with one or more dopants by introducing a dopant into the reaction chamber. In other words, the layer deposited in the cycle of this method may be doped with one or more dopants. In some embodiments, the dopant is phosphorus.

[0404] In some embodiments, the temperature-controlled container is configured to heat the composition and optionally the reactants. In some embodiments, the temperature-controlled container is maintained at a temperature of at least -50°C to at most 20°C, or at least 20°C to at most 250°C, or at least 100°C to at most 200°C.

[0405] In certain embodiments, the apparatus disclosed herein may be configured to manufacture semiconductor devices as disclosed herein.

[0406] In certain embodiments, the devices disclosed herein are configured to form at least a portion of a semiconductor device as disclosed herein.

[0407] Figure 2 A device 600 according to another exemplary embodiment of the present disclosure is illustrated schematically. Device 600 may be used to perform the methods described herein and / or form a portion of a transistor or semiconductor device as described herein.

[0408] In the illustrated example, apparatus 600 includes one or more reaction chambers 602, a deposition precursor source 610, a purge gas source 611, optionally one or more reactant sources 612, an exhaust device 603, and a controller 605. The deposition precursor source 610 is configured to deliver one or more compositions (e.g., gases) comprising one or more deposition precursors as described herein into the reaction chamber 602. The reaction chamber 602 may include any suitable reaction chamber, such as an ALD or CVD reaction chamber.

[0409] Precursor source 610 may include a vapor delivery container. In the vapor delivery container 610, the composition containing the precursor may be alone or mixed with one or more carrier gases (e.g., inert gases). One or more optional reactant sources 612 may include a container and one or more reactants as described herein—alone or mixed with one or more carrier gases (e.g., inert gases). Purge gas source 611 may include one or more inert gases, such as N2 or rare gases, as described herein. Apparatus 600 may include any suitable number of gas sources. Gas sources 610-612 may be coupled to reaction chamber 602 via respective lines 620-622, each of which may include a flow controller, valve, heater, etc. Exhaust device 603 may include one or more vacuum pumps.

[0410] Controller 605 includes electronic circuitry and software to selectively operate valves, manifolds, heaters, pumps, and other components included in apparatus 600. Such circuitry and components operate to introduce compositions, optional reactants, and purge gases from respective sources 610-612. Controller 605 can control the timing of gas pulse sequences, the temperature of the substrate and / or reaction chamber, the pressure within the reaction chamber, and various other operations to provide appropriate operation of apparatus 600. Controller 605 may include control software to electrically or pneumatically control valves to control the inflow and outflow of precursors, optional reactants, and purge gases from reaction chamber 602. Controller 605 may include modules, such as software or hardware components like FPGAs or ASICs, to perform certain tasks. Modules may advantageously be configured to reside on addressable storage media of the control system and configured to perform one or more processes.

[0411] Other configurations of the apparatus 600 are possible, including different quantities and types of compositions and optional reactant sources, as well as purge gas sources. Furthermore, it should be understood that numerous arrangements of valves, conduits, composition sources, optional reactant sources, and purge gas sources exist to achieve the objective of selectively feeding gas into the reaction chamber 602. Additionally, for the sake of simplicity, many components have been omitted in the schematic diagram of the apparatus, and these components may include, for example, various valves, manifolds, purifiers, heaters, containers, vents, and / or bypasses.

[0412] Additionally, embodiments of the controller may include a combination of hardware, software, and electronic components or modules, which may be depicted for the purposes of discussion as if implemented primarily in hardware. However, those skilled in the art will recognize from this detailed description that, in at least one embodiment, the electronic aspects of this disclosure may be implemented in software (e.g., instructions stored on a non-transitory computer-readable medium) executable by one or more processing units (e.g., microprocessors and / or application-specific integrated circuits).

[0413] During operation of reactor apparatus 600, a substrate, such as a semiconductor wafer (not shown), is transferred from, for example, a substrate processing system to reaction chamber 602. Once the substrate is transferred to reaction chamber 602, one or more gases from gas sources 610-612, such as a composition, carrier gas, optional reactants, and / or purge gas, are introduced into reaction chamber 602 via corresponding lines 620-622.

[0414] Another aspect of this disclosure relates to a method for forming a layer on a semiconductor substrate, comprising the following steps:

[0415] a) Providing a semiconductor substrate into the reaction chamber;

[0416] b) Execute one or more loops, each loop consisting of:

[0417] A deposition precursor pulse, wherein at least a portion of a semiconductor substrate is brought into contact with a vapor of a composition comprising the deposition precursor by introducing vapor of the deposition precursor into a reaction chamber;

[0418] The sedimentary precursor includes:

[0419] - Metal (M); and

[0420] - At least one phosphonium imide ligand (L 1 );

[0421] As a result of the cycle, a layer is formed on the semiconductor substrate in the reaction chamber.

[0422] In some embodiments, at least one phosphonium imide ligand (L 1It has the structure according to formula (I):

[0423] (I)

[0424] in,

[0425] R 1 Selected from H, hydrocarbon groups, amino groups, and silyl groups;

[0426] R 2 Selected from H, hydrocarbon groups, amino groups, and silyl groups;

[0427] R 3 Selected from H, hydrocarbon groups, amino groups, and silyl groups;

[0428] The condition is R 1 R 2 and R 3 At least one of them is not H.

[0429] The phosphonimide ligand (L) having the structure according to formula (I) has been described above. 1 Another embodiment of ).

[0430] According to step b) of this method, and after the substrate is provided to the reaction chamber, one or more (deposition) cycles are performed to form a layer on the semiconductor substrate.

[0431] Specifically, this (deposition) method can be a cyclic deposition process, preferably a combination of cyclic deposition processes, such as atomic layer deposition (ALD) or cyclic chemical vapor deposition (CVD). Each cyclic deposition process includes one or more different (deposition) cycles. In a particular embodiment, the method disclosed herein can be an ALD method. Compared to sputtering techniques commonly used in the prior art to deposit thin films and layers to fabricate various semiconductors and transistors, cyclic deposition processes such as ALD have been found to provide more uniform deposition on the substrate surface and / or (previously) deposited layers.

[0432] As used herein, the synonyms “deposition” or “cyclic deposition” or “cyclic deposition process” or “cyclic deposition process” refer to the sequential introduction of precursors (and / or reactants) into a reaction chamber to deposit a layer or film on a substrate, and include processing techniques such as ALD, CVD, and hybrid cyclic deposition processes that include ALD and CVD components. Typically, a deposition cycle can form a film or layer of about 0.01 nm to about 0.2 nm in an ALD process, or a film or layer of about 0.01 nm to about 2.0 nm or larger in a cyclic CVD process. However, experimental thicknesses can vary depending on the number and type of cycles and the available reaction sites on the substrate and / or previously deposited layers.

[0433] The term "atomic layer deposition" (ALD) refers to a vapor-phase deposition process performed in a processing chamber in a deposition cycle (typically multiple consecutive deposition cycles). When performed using alternating pulses of precursor / reactive gases and purge gases (e.g., inert carrier gases), the term atomic layer deposition, as used herein, is also intended to include processes specified by related terms such as chemical vapor deposition, atomic layer epitaxy (ALE), molecular beam epitaxy (MBE), gas-source MBE, organometallic MBE, and chemical beam epitaxy.

[0434] In the ALD process, during each cycle, a precursor (e.g., a deposition precursor) is typically introduced into the reaction chamber and chemisorbed onto the deposition surface (e.g., a substrate surface that may include previously deposited material from a previous ALD cycle or other materials), thereby forming a material, such as about a monolayer or sub-monolayer of the material, or several monolayers of the material, or multiple monolayers of the material, which does not readily react with another precursor (i.e., a self-limiting reaction). Subsequently, in some cases, reactants (e.g., another precursor or a reactive gas, such as oxygen reactant) may be introduced into the processing chamber. The reactants are able to further react with the precursor. It should be noted that, as used herein, the ALD process does not necessarily involve a series of self-limiting surface reactions.

[0435] In some embodiments, step b) of the method according to this disclosure further includes a reactant pulse, wherein at least a portion of the semiconductor substrate is contacted with at least one reactant by introducing at least one reactant into the reaction chamber. The description of the reactant types provided in the apparatus section is adapted to the description of the method with necessary modifications.

[0436] Optionally, during one or more repetitions, such as during each deposition step, a purging step may be used to remove any excess composition from the processing chamber and / or any excess reactants and / or reaction byproducts from the reaction chamber.

[0437] As used herein, the term "purge" can refer to the process of supplying an inert or substantially inert gas to a reaction chamber between two pulses of reacting gases. For example, a purging may be provided between subsequent pulses, using an inert gas, such as a rare gas, to avoid or at least minimize gas-phase interactions between the composition and / or reactants.

[0438] In certain embodiments, the methods disclosed herein provide purging of the reaction chamber before and / or after each precursor pulse. In certain embodiments, the methods disclosed herein provide purging of the reaction chamber before and / or after each deposition precursor pulse and reactant pulse.

[0439] In some embodiments, the purging duration is greater than or equal to 0.1 seconds; preferably greater than or equal to 0.5 seconds; preferably greater than or equal to 1 second; preferably greater than or equal to 5 seconds; preferably greater than or equal to 10 seconds. In some embodiments, the duration is less than or equal to 60 seconds; preferably less than or equal to 45 seconds; preferably less than or equal to 35 seconds; preferably less than or equal to 20 seconds; preferably less than or equal to 10 seconds. In some embodiments, the duration is from 0.1 to 60 seconds; preferably 0.5 to 20 seconds; preferably 5 to 10 seconds; preferably 1 to 10 seconds.

[0440] Advantageously, the cyclic deposition process disclosed herein can be a thermal deposition process. In other words, in some embodiments, neither the pulses nor the purges in the cyclic deposition process employ plasma. In the case of a thermal cyclic deposition process, the duration of the steps of providing the deposition precursor to the reaction chamber and / or providing the reactant to the reaction chamber can be relatively long to allow the precursor and / or reactant to the substrate surface and / or the previously deposited layer.

[0441] In some embodiments, the duration of the step of providing the deposition precursor to the reaction chamber is greater than or equal to 0.1 seconds; preferably greater than or equal to 0.5 seconds; preferably greater than or equal to 1 second; preferably greater than or equal to 5 seconds; preferably greater than or equal to 10 seconds. In some embodiments, the duration is less than or equal to 60 seconds; preferably less than or equal to 45 seconds; preferably less than or equal to 35 seconds; preferably less than or equal to 20 seconds; preferably less than or equal to 10 seconds. In some embodiments, the duration is from 0.1 to 60 seconds; preferably 0.5 to 20 seconds; preferably 5 to 10 seconds; preferably 1 to 10 seconds.

[0442] In some embodiments, the duration of the step of providing reactants to the reaction chamber is greater than or equal to 0.1 seconds; preferably greater than or equal to 0.5 seconds; preferably greater than or equal to 1 second; preferably greater than or equal to 5 seconds; preferably greater than or equal to 10 seconds. In some embodiments, the duration is less than or equal to 60 seconds; preferably less than or equal to 45 seconds; preferably less than or equal to 35 seconds; preferably less than or equal to 20 seconds; preferably less than or equal to 10 seconds. In some embodiments, the duration is from 0.1 to 60 seconds; preferably 0.5 to 20 seconds; preferably 5 to 10 seconds; preferably 1 to 10 seconds.

[0443] In some embodiments, the cyclic deposition process employs plasma-enhanced deposition techniques. For example, the cyclic deposition process may include plasma-enhanced atomic layer deposition and / or plasma-enhanced chemical vapor deposition. In this case, any pulse in the cyclic deposition process may include the generation of plasma in the reaction chamber.

[0444] In some embodiments, the methods disclosed herein can be a continuous vacuum deposition process. In the case of a continuous vacuum deposition process, material is deposited onto a substrate in a reaction chamber without the introduction of atmosphere or any interruption that would disrupt the controlled vacuum environment. This process involves maintaining a consistent vacuum pressure within the reaction chamber.

[0445] In certain embodiments, the methods disclosed herein provide the ability to form a layer without any intermediate vacuum disruption. The term "without any intermediate vacuum disruption" can mean no vacuum disruption, no interruption as a timeline, no intermediate material steps, no change in processing conditions, and / or immediately following such interruption.

[0446] In certain embodiments, the formation of a layer may include at least 1 cycle, at least 2 cycles, at least 5 cycles, at least 10 cycles, at least 20 cycles, at least 40 cycles, at least 100 cycles, at least 200 cycles, at least 400 cycles, at least 600 cycles, or at least 1000 cycles. In some embodiments, the step may be repeated from at least 1 cycle to at most 5000 cycles; preferably at least 1 cycle to at most 1000 cycles; preferably at least 2 cycles to at most 100 cycles; and preferably at least 5 cycles to at most 50 cycles.

[0447] Each cycle may include one or more pulses. In some embodiments, at least one pulse relates to a self-limiting surface reaction. In some embodiments, all pulses relate to a self-limiting surface reaction. In the case of ALD, a self-limiting surface reaction refers to a chemical reaction that automatically stops or slows down once a certain threshold or coverage is reached on the surface, for example, once a complete monolayer or sub-monolayer is formed, the reaction stops by preventing further reaction with other precursors. In some embodiments, a cycle includes one or more precursor pulses, and optionally one or more reactant pulses.

[0448] In a particular embodiment, the layer may have an average thickness between 10.0 nm and 100.0 nm, or between 1.0 nm and 100.0 nm, or between 5.0 nm and 20 nm, or between 1.0 nm and 10.0 nm, or between 0.05 nm and 2.0 nm, or between 0.10 nm and 2.0 nm, or between 0.10 nm and 1.75 nm, or between 0.10 nm and 1.50 nm, or between 0.10 nm and 1.25 nm, preferably between 0.10 nm and 1.0 nm, or between 0.20 nm and 1.0 nm, or between 0.25 nm and 1.0 nm. In certain embodiments, the method disclosed herein provides that the average thickness of the channel layer can be between 0.05 nm and 2.0 nm, or between 0.10 nm and 2.0 nm, or between 0.10 nm and 1.75 nm, or between 0.10 nm and 1.50 nm, or between 0.10 nm and 1.25 nm, preferably between 0.10 nm and 1.0 nm, or between 0.20 nm and 1.0 nm, or between 0.25 nm and 1.0 nm.

[0449] In some embodiments, the cycling of the growth layer may include the following pulse sequence: a deposition precursor pulse and an optional reactant pulse. In the deposition precursor pulse, one or more deposition precursors are provided to the reaction chamber and may be chemisorbed onto the substrate (i.e., adhere to and form chemical bonds with atoms or molecules on the surface of the substrate and / or a previously deposited layer or material). In the optional reactant pulse, one or more reactants are provided to the reaction chamber and may react with the chemisorbed metal to form a layer on at least a portion of the substrate. The number of cycles determines the total thickness of the deposited layer.

[0450] The advantage of the cyclic deposition process disclosed in this invention is the precise control of the overall layer thickness.

[0451] Figure 1 An exemplary embodiment of a method 100 for forming a layer on a semiconductor substrate, as disclosed herein, is illustrated schematically. The method begins 111 after the substrate is provided to a reaction chamber. A cyclic deposition process includes providing one or more compositions comprising at least one deposition precursor (e.g., a gas) as described herein to the reaction chamber in a deposition precursor pulse 112. Optionally, the reaction chamber 113 is purged after the deposition precursor pulse 112. The deposition precursor pulse is configured to deliver a composition comprising a deposition precursor as described herein. Optionally, one or more reactants are provided to the reaction chamber in a reactant pulse 114. Optionally, the reaction chamber 115 may be purged after the reactant pulse.

[0452] Pre-deposition pulse 112, optional reactant pulse 114, and optional purging steps 113, 115 can be repeated sequentially or individually 116 any number of times until the layer reaches the desired thickness. Once the desired thickness is reached, the method ends 117. Thereafter, as known in the art, further processing steps can be performed on the substrate to fabricate device structures and / or complete the devices as described herein.

[0453] It should be understood that the deposition precursor pulse 112 and the optional reactant pulse 114 may overlap in a cycle. Furthermore, the order of each method step 112 to 115 within each cycle may vary. For example, and in another exemplary embodiment, the cycle may include consecutive steps of the optional reactant pulse and the deposition precursor pulse. Thus, the optional reactant pulse may precede the deposition precursor pulse.

[0454] In certain embodiments, the methods disclosed herein provide that the deposition precursor pulses and optional reactant pulses comprise multiple micropulses. As used herein, a “micropulse” is a short period of time that can introduce one or more deposition precursors and optionally one or more reactants into the reaction chamber. Therefore, the methods disclosed herein offer a high degree of flexibility in pulse sequence and length, thus providing a cost-effective and more efficient method compared to conventional layer production processes included in the art.

[0455] In some embodiments, the deposition precursor pulse and optionally one or more reactants can last for at least 0.01 s to at most 120 s, or at least 0.01 s to at most 0.1 s, or at least 0.01 s to at most 0.02 s, or at least 0.02 s to at most 0.05 s, or at least 0.05 s to at most 0.1 s, or at least 0.1 s to at most 20 s, or at least 0.1 s to at most 0.2 s, or at least 0.2 s to at most 0.5 s, or at least 0.5 s to at most 1.0 s, or at least 1.0 s to at most 2.0 s, or at least 2.0 s to at most 5.0 s, or at least 5.0 s to at most 10.0 s, or at least 10.0 s to at most 20.0 s.

[0456] It should be understood that any two steps and / or pulses and / or micropulses can be separated by purge. Therefore, in some embodiments, the deposition precursor pulse and optional reactant pulse can be separated by purge. In some embodiments, subsequent cycles are separated by purge.

[0457] In certain embodiments, the reaction chamber may be purged before and / or after the deposition precursor pulse and optional reactant pulse. The advantage of purging is that it prevents gas-phase reactions, which can inhibit / eliminate self-limiting surface reactions. Another advantage of purging the reaction chamber before and / or after each precursor pulse and / or optional reactant pulse is the removal of any residual precursors, reactants, and / or reaction byproducts, thereby avoiding cross-contamination between pulses and producing a film or layer with high purity and fewer harmful defects.

[0458] The methods disclosed herein can be performed at various temperatures and / or pressures. In specific embodiments, the methods disclosed herein provide temperatures that can heat the substrate to approximately 80°C to approximately 500°C, or approximately 80°C to approximately 400°C, or approximately 100°C to approximately 400°C, or approximately 125°C to approximately 400°C, preferably approximately 150°C to approximately 400°C, or approximately 175°C to approximately 400°C, preferably approximately 200°C to approximately 400°C, or approximately 200°C to approximately 300°C, or approximately 250°C to approximately 400°C, or approximately 300°C to approximately 400°C. The listed temperatures can reduce the time required for material deposition, although lower or higher temperatures are still conceivable.

[0459] In certain embodiments, as provided by the methods disclosed herein, the pressure in the reaction chamber is between about 0.1 Torr and about 100.0 Torr, or between about 0.5 Torr and about 100.0 Torr, or between about 1.0 Torr and about 100.0 Torr, or between about 2.0 Torr and about 100.0 Torr, or between about 5.0 Torr and about 100.0 Torr, or between about 5.0 Torr and about 80.0 Torr, or preferably between about 5.0 Torr and about 50.0 Torr, or between about 10.0 Torr and about 50.0 Torr, or between 0.5 Torr and about 10.0 Torr. The listed pressures can reduce the time required for material deposition, although lower or higher pressures may still be considered.

[0460] In some embodiments, after the cyclic deposition process, the substrate is subjected to an annealing step in an environment including hydrogen and nitrogen. Suitably, the annealing step may be performed at a temperature of at least 300°C to at most 600°C. Alternatively, the annealing step may be performed at a temperature of at least 300°C to at most 1000°C.

[0461] In some embodiments, a composition comprising a deposition precursor and optionally one or more reactants is provided to a reaction chamber by means of a carrier gas. Exemplary carrier gases include nitrogen (N2) and rare gases such as He, Ne, Ar, Xe, or Kr.

[0462] The continuous substrate may extend beyond the boundary of the processing / reaction chamber where the deposition process occurs. In some processes, the continuous substrate may be moved through the processing chamber, allowing the process to continue until the end of the substrate is reached. The continuous substrate can be supplied from a continuous substrate supply system to allow the continuous substrate to be manufactured and output in any suitable form. Non-limiting examples of continuous substrates may include sheets or flexible materials. The continuous substrate may also include a carrier or sheet on which a non-continuous substrate is mounted.

[0463] Another aspect of the present invention relates to a semiconductor device structure formed according to the method described herein. The semiconductor device structure preferably comprises a layer containing a variety of metal atoms selected from Al, Ga, In, lanthanides, transition metals, and metalloids. Preferably, the metals are selected from Al, Ga, In, Si, Ge, B, rare earth metals, Group 4 metals, Group 5 metals, and Group 6 metals.

[0464] In some embodiments, the semiconductor device structure includes at least one phosphonium imide ligand (L) having a structure according to formula (I). 1 (layer)

[0465] (I)

[0466] in,

[0467] R 1 Selected from H, hydrocarbon groups, amino groups, and silyl groups;

[0468] R 2 Selected from H, hydrocarbon groups, amino groups, and silyl groups;

[0469] R 3 Selected from H, hydrocarbon groups, amino groups, and silyl groups;

[0470] The condition is R 1 R 2 and R 3 At least one of them is not H.

[0471] Another aspect of the invention relates to a layer located on the surface of a semiconductor substrate, comprising a metal selected from Al, Ga, In, lanthanides, transition metals, and metalloids, wherein the layer is formed by the methods described herein. Preferably, the metal is selected from Al, Ga, In, Si, Ge, B, rare earth metals, Group 4 metals, Group 5 metals, and Group 6 metals.

[0472] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of various processes, apparatuses, systems and configurations, as well as other features, functions, actions and / or properties disclosed herein, and any and all equivalents thereof.

[0473] The illustrations presented herein are not intended to be actual views of any particular material, structure, or device, but are merely idealized representations used to describe embodiments of this disclosure.

[0474] The specific embodiments shown and described are illustrative of this disclosure and its best mode, and are not intended to limit the scope of aspects and embodiments in any way. In fact, for the sake of brevity, conventional manufacturing, connection, fabrication, and other functional aspects of the device may not be described in detail. Furthermore, the connecting lines shown in the figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual device, and / or may not exist in some embodiments.

[0475] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific embodiments or examples herein should not be considered limiting, as many variations are possible. The particular routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in another order, or in some cases omitted.

Claims

1. A composition for forming a layer on a semiconductor substrate, the composition comprising a deposition precursor, said deposition precursor comprising: - The central atom or ion (M); and - At least one phosphonium imide ligand (L 1 ).

2. The composition according to claim 1, wherein, The at least one phosphonium imide ligand (L 1 It has the structure according to formula (I): (I) in, R 1 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups; R 2 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups; R 3 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups; The condition is R 1 R 2 and R 3 At least one of them is not H.

3. The composition according to claim 2, wherein, R 1 Selected from H, C 1-10 Alkyl, C 2-10 alkenyl, C 2-10 alkynyl group, C 3-10 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl, tri-C 1-6 Alkyl silyl; R 2 Selected from H, C 1-10 Alkyl, C 2-10 alkenyl, C 2-10 alkynyl group, C 3-10 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl and tri-C 1-6 Alkyl silyl; R 3 Selected from H, C 1-10 Alkyl, C 2-10 alkenyl, C 2-10 alkynyl group, C 3-10 cycloalkyl, aryl, C 1-6 Alkyl or trimethylsilyl substituted aryl, -NH2, mono-C 1-6 Alkylamino, di-C 1-6 Alkylamino, -SiH3, mono-C 1-6 Alkyl silyl, di-C 1-6 Alkyl silyl and tri-C 1-6 Alkyl silyl group.

4. The composition according to claim 2, wherein, R 1 R 2 and R 3 Each of them is independently selected from C1- 10 alkyl.

5. The composition according to claim 1, wherein, The central atom or ion is selected from Al, Ga, In, Si, Ge, B, rare earth metals, Group 4 metals, Group 5 metals, and Group 6 metals.

6. The composition according to claim 1, wherein, The deposition precursor comprises according to M(L) 1 The structure is )4, where M is selected from Group 4 metals, V and Mo.

7. The composition according to claim 1, wherein, The deposition precursor comprises according to M(L) 1 The structure of )3 or its dimer, wherein M is selected from Al, In, Ga and rare earth metals.

8. The composition according to claim 1, wherein, The deposition precursor also includes at least one additional ligand (L 2 ), wherein the other ligand (L 2 The ligands are selected from cyclopentadienyl ligands, amidoyl ligands, amidoyl ligands, alkyl ligands, alkylamide ligands, imide ligands, alkoxide ligands, silanoxy ligands, oxo ligands, hydrogen ligands, halide ligands, 1,4-diazabutadiene ligands, guanidino ligands, and diketide ligands.

9. The composition according to claim 8, wherein, The deposition precursor comprises according to M(L) 1 ) x (L 2 ) y The structure, wherein: x is an integer selected from 1, 2, or 3; y is an integer selected from 1, 2, or 3; Where x + y equals 4; and M is selected from Group 4 metals, V, or Mo.

10. The composition according to claim 8, wherein, The deposition precursor comprises according to M(L) 1 ) x (L 2 ) y The structure, wherein: x is an integer selected from 1, 2, 3 or 4; y is an integer selected from 1, 2, 3, or 4; Where x + y equals 2, 3, 4, 5, 6, 7, or 8; and M is selected from Group 4, Group 5, or Group 6 metals.

11. The composition according to claim 8, wherein, The deposition precursor comprises according to M(L) 1 (L) 2 The structure of )2 or its dimer, wherein: M is selected from Al, In, Ga, and rare earth metals.

12. The composition according to claim 1, wherein, The deposition precursor comprises according to M(L) 1 ) x (O) y The structure, wherein: (i) M is a Group 5 metal, x=3 and y=1; or (ii) M is a Group 6 metal, x=2 and y=2.

13. The composition according to claim 1, wherein, The deposition precursor comprises according to M(L) 1 ) x (NR 13 ) y The structure, wherein: R 13 Selected from C 1-8 Alkyl, -SiH3, mono-C 1-8 Alkyl silyl, di-C 1-8 Alkyl silyl and tri-C 1-8 Alkyl silyl; (i) M is a Group 5 metal, x=3 and y=1; or (ii) M is a Group 6 metal, x=2 and y=2.

14. The composition according to claim 1, wherein, The deposition precursor has a purity of at least 95.0% (by weight).

15. A steam delivery container comprising the composition according to claim 1, wherein, The vapor delivery container is constructed and arranged to supply vapor of the deposition precursor to the reaction chamber of the vapor deposition apparatus.

16. A vapor deposition apparatus, comprising: - A reaction chamber, which is constructed and arranged to at least hold a semiconductor substrate; - A vapor delivery container comprising a composition containing a deposition precursor, wherein the vapor delivery container is configured and arranged to provide vapor of the deposition precursor; - A precursor distribution and removal system configured to supply vapor of the deposition precursor from a vapor delivery vessel to a reaction chamber and to remove vapor of the deposition precursor from the reaction chamber; and - A sequence controller operatively connected to a precursor dispensing and removal system and including a memory set with a program configured to control the flow of a composition containing a deposition precursor from a vapor delivery vessel to a reaction chamber by activating the precursor dispensing and removal system during one or more cycles; thereby, as a result of the cycle, a layer is formed on a semiconductor substrate in the reaction chamber; The sedimentary precursor includes: - The central atom or ion (M); and - At least one phosphonium imide ligand (L 1 ).

17. The device according to claim 16, wherein, The at least one phosphonium imide ligand (L 1 It has the structure according to formula (I): (I) in, R 1 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups; R 2 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups; R 3 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups; The condition is R 1 R 2 and R 3 At least one of them is not H.

18. A method for forming a layer on a semiconductor substrate, comprising the steps of: a) Providing a semiconductor substrate into the reaction chamber; b) Execute one or more loops, each loop consisting of: A deposition precursor pulse, wherein at least a portion of a semiconductor substrate is brought into contact with a vapor of a composition comprising the deposition precursor by introducing vapor of a deposition precursor into a reaction chamber; The sedimentary precursor includes: - The central atom or ion (M); and - At least one phosphonium imide ligand (L 1 ); As a result of the cycle, a layer is formed on the semiconductor substrate in the reaction chamber.

19. The method according to claim 18, wherein, The at least one phosphonium imide ligand (L 1 It has the structure according to formula (I): (I) in, R 1 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups; R 2 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups; R 3 Selected from H, optionally substituted hydrocarbon groups, optionally substituted amino groups, and optionally substituted silyl groups; The condition is R 1 R 2 and R 3 At least one of them is not H.

20. The method according to claim 18, wherein, The method includes atomic layer deposition (ALD) or cyclic chemical vapor deposition (CVD) processes.

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