A molybdenum platform lifting array for regulating MPCVD bottom temperature and a temperature regulation method

By using an array-type, liftable molybdenum support platform structure and a temperature feedback adjustment method, the problem of uneven bottom temperature in MPCVD equipment was solved, and high-quality deposition of diamond films was achieved.

CN122484722APending Publication Date: 2026-07-31JINGYU XINCHUANG SEMICONDUCTOR EQUIPMENT (FOSHAN) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-06-15
Publication Date
2026-07-31

AI Technical Summary

Technical Problem

In existing MPCVD equipment, the substrate support structure is a single fixed molybdenum stage, which leads to a significant temperature difference between the center and the edge of the substrate, causing polycrystalline growth at the diamond edge, which cannot meet the requirements for high-quality diamond films.

Method used

It adopts an array-type independently height-adjustable molybdenum support platform structure. Each support platform is connected to a micro-displacement drive component. The height is adjusted in real time by the control unit based on temperature feedback to achieve uniformity of the bottom temperature field.

Benefits of technology

It effectively eliminates the temperature difference at the bottom, inhibits the polycrystalline growth at the diamond edge, improves the grain uniformity and surface smoothness of the film, and ensures precise, rapid and stable control of the temperature field.

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Abstract

This invention relates to a molybdenum stage lifting array and temperature control method for regulating the deposition temperature in MPCVD, belonging to the technical field of MPCVD equipment. The invention includes an array of molybdenum support stages, lifting drive components, and a control unit. Each molybdenum support stage is independently connected to the lifting drive component, and the control unit controls the independent operation of each lifting drive component to adjust the height of the corresponding molybdenum support stage. The temperature control method based on this array, through temperature detection, height adjustment, and closed-loop feedback steps, adapts the height of different areas of the deposition surface to the plasma temperature field distribution, achieving temperature field homogenization. This invention can effectively reduce polycrystalline growth at diamond edges, improve diamond growth quality, and adapt to different deposition process requirements, possessing outstanding substantive features and significant progress.
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Description

Technical Field

[0001] This invention relates to the field of MPCVD equipment technology, specifically to a molybdenum stage lifting array and temperature control method for regulating the bottom temperature of MPCVD. Background Technology

[0002] MPCVD (Microwave Plasma Chemical Vapor Deposition) technology is one of the mainstream methods for preparing high-quality diamond films. Its principle is to use microwaves to excite reactive gases to generate plasma, which then deposits diamond on the substrate surface. During MPCVD diamond deposition, the temperature field distribution on the substrate surface directly determines the diamond nucleation density, growth rate, and crystal quality, and is a core process parameter affecting diamond purity, flatness, and mechanical properties. In existing MPCVD equipment, the substrate support structure generally uses a single fixed molybdenum stage, which cannot independently adjust the height of different areas of the substrate. Due to the inherent characteristic of high density at the center and low density at the edges of the microwave plasma within the cavity, there is a significant difference in heat flux density received between the center and the edges of the substrate, resulting in temperature differences of tens or even hundreds of degrees Celsius. This non-uniform temperature field can cause severe polycrystalline growth at the diamond edge. Due to insufficient temperature in the edge region, the nucleation density is low and the growth rate is slow, which can easily lead to the formation of polycrystalline ring growth, introducing a large number of grain boundaries and defects. This reduces the surface smoothness, thermal conductivity and mechanical strength of the diamond film, making it impossible to meet the high-quality diamond requirements of applications such as high-end optical windows and heat dissipation substrates for high-power electronic devices.

[0003] To address the aforementioned issues, existing industry solutions primarily focus on optimizing heating methods, such as embedding heating elements within the molybdenum stage, employing auxiliary heaters, or optimizing the microwave cavity structure. However, these solutions have significant limitations: the introduction of additional heat sources by heating elements interferes with the plasma's temperature distribution, resulting in lag and complex control; cavity structure optimization is time-consuming, costly, and poorly adaptable to different sized substrates. To date, no publicly reported or applied technical solution has been found that utilizes an array-type, independently adjustable molybdenum stage structure to actively adjust the height of different substrate regions to adapt to the plasma temperature field distribution, thereby solving the problem of edge polycrystalline growth. Therefore, a technical solution with outstanding substantive features is urgently needed. Through innovative structural design and control methods, it can achieve active homogenization control of the substrate temperature field, filling existing technological gaps and driving the upgrading and iteration of MPCVD diamond deposition technology. Summary of the Invention

[0004] In order to solve the problems of the prior art, the present invention provides a molybdenum stage lifting array and temperature control method for regulating the bottom temperature of MPCVD.

[0005] To solve the above-mentioned technical problems, the present invention is achieved through the following technical solution: Firstly, a molybdenum stage lifting array for regulating MPCVD bottom temperature includes an array of molybdenum support stages, lifting drive components, and a control unit; the molybdenum support stages support different areas of the MPCVD bottom, and each molybdenum support stage is independently connected to a lifting drive component; the control unit is electrically connected to all lifting drive components and is used to control the independent operation of each lifting drive component, thereby adjusting the height of the corresponding molybdenum support stage so that the height of different areas of the bottom surface adapts to the temperature field distribution requirements, and achieves uniformity of the bottom temperature field.

[0006] In a specific embodiment of the first aspect, the molybdenum support platforms are distributed in a matrix pattern, covering the entire support surface of the submerged area; wherein the distribution density of the molybdenum support platforms located in the edge region of the submerged area is greater than or equal to the distribution density in the central region.

[0007] In a specific embodiment of the first aspect, the lifting drive assembly is a micro-displacement drive structure with a displacement adjustment accuracy of not less than 0.01 mm; the molybdenum support platform is made of high-purity molybdenum material.

[0008] In a specific implementation of the first aspect, the control unit has a built-in temperature feedback module and adjustment algorithm, which are used to automatically adjust the height of each molybdenum support platform according to the received bottom temperature detection data to form a closed-loop control; the control unit is also provided with a manual adjustment interface for manually setting the height parameters of the molybdenum support platforms in each area.

[0009] In a specific embodiment of the first aspect, the purity of the high-purity molybdenum material is not less than 99.99%; the micro-displacement driving structure is a piezoelectric ceramic micro-displacement actuator, with a displacement adjustment range of 0-5mm and an adjustment accuracy of not less than 0.005mm.

[0010] Secondly, a method for controlling the bottom temperature of MPCVD based on a molybdenum stage lifting array includes the following steps: S1: Temperature detection, temperature data of each area of ​​the submerged surface is collected by temperature sensors. The temperature sensors are embedded in the submerged surface at positions corresponding to each molybdenum support platform, and the temperature data is transmitted to the control unit in real time. S2: Height adjustment. The control unit judges the temperature difference between different areas of the submerged area based on the received temperature data, controls the lifting drive component of the corresponding area to adjust the height of the corresponding molybdenum support platform, so that the temperature difference between the submerged edge area and the center area tends to be balanced. S3: Closed-loop feedback. The control unit continuously receives temperature data transmitted by the temperature sensor and adjusts the height of each molybdenum support in real time until it sinks to the bottom. The temperature difference of the entire surface is controlled within the preset range, thereby achieving temperature field homogenization and reducing polycrystalline growth at the diamond edge.

[0011] In one specific implementation of the second aspect, in step S2: when the temperature of the bottom edge region is lower than that of the center region, the control unit controls the lifting drive component corresponding to the edge region to raise the height of the molybdenum support platform and reduce the distance between the bottom edge and the plasma; when the temperature of the bottom edge region is higher than that of the center region, the control unit controls the lifting drive component corresponding to the edge region to lower the height of the molybdenum support platform and increase the distance between the bottom edge and the plasma.

[0012] In one specific embodiment of the second aspect, the preset temperature difference range in step S3 is ±5℃; and the control unit can be manually switched to manual adjustment mode, allowing the operator to manually set the height parameters of each molybdenum support stage according to the deposition process requirements.

[0013] The beneficial effects of this invention are as follows: 1. This invention employs an array-type, independently height-adjustable molybdenum support platform structure. Each molybdenum support platform is independently connected to a micro-displacement lifting drive component, and its height is independently adjusted by a control unit based on real-time temperature detection data of each region on the substrate surface. This technical solution overcomes the structural limitations of traditional single fixed molybdenum platforms that cannot adapt to temperature field distribution. By actively adjusting the spatial distance between different regions of the substrate and the microwave plasma, the plasma heat flux density received by each region is changed, thereby achieving localized and precise control of the substrate temperature field. In particular, addressing the inherent characteristic that the temperature in the edge regions tends to deviate from the center, the layout design, where the density of support platforms in the edge regions is no lower than that in the center region, enhances the ability to adjust temperature-sensitive areas. This solution addresses the physical root cause of temperature field formation, enabling spatial matching between the height of each region of the substrate and the plasma temperature distribution. This effectively eliminates the temperature difference between the edge and the center, suppresses the polycrystalline competitive growth of diamond edges induced by temperature unevenness, and significantly improves the grain uniformity, surface smoothness, and crystal quality of the diamond film.

[0014] 2. This invention integrates a complete control method encompassing temperature detection, height adjustment, and closed-loop feedback. The control unit incorporates a temperature feedback module and adjustment algorithm, continuously receiving temperature sensor data and iteratively optimizing the height of each support stage in real time until the temperature difference across the entire surface converges to a preset uniform range, ensuring long-term temperature field stability. Simultaneously, the molybdenum support stage utilizes high-purity molybdenum material, maintaining chemical inertness and thermal conductivity consistency in a high-temperature plasma environment, preventing the introduction of impurities or localized thermal distortion. The lifting drive component possesses micron-level displacement adjustment precision, capable of compensating for minute temperature deviations. Furthermore, the control unit provides a manual adjustment interface, allowing for preset height parameters for different substrate specifications and deposition processes, eliminating the need for structural modifications to the MPCVD equipment and exhibiting excellent process adaptability and scalability. The combined effect of these technical solutions achieves precise, rapid, and stable control of the substrate temperature field, fundamentally solving the technical challenge of edge polycrystalline growth in MPCVD diamond deposition and driving the upgrading and iteration of diamond vapor deposition technology. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the control of the molybdenum platform lifting array structure of the present invention. Detailed Implementation

[0016] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0017] like Figure 1 The diagram shows a molybdenum stage lifting array and temperature control method for regulating the bottom temperature of MPCVD.

[0018] I. Molybdenum platform lifting array structure.

[0019] This invention provides a molybdenum stage lifting array for regulating the bottom temperature of MPCVD, the core structure of which includes an array of molybdenum support stages, a lifting drive assembly, and a control unit.

[0020] (1) Molybdenum support platform.

[0021] The molybdenum support platform is made of high-purity molybdenum material with a purity of not less than 99.99% (preferably above 99.995%) to ensure chemical stability and thermal uniformity in a high-temperature plasma environment and to prevent the introduction of impurities that could contaminate the diamond film. The support platform can be circular, square, or hexagonal, with a circular shape being preferred. The diameter ranges from 5mm to 20mm, depending on the size of the substrate and the precision of temperature control.

[0022] The support platforms are distributed in a matrix (such as a rectangular matrix or concentric rings), covering the entire support surface of the submerged area. To enhance the temperature control capability of the edge areas, the distribution density of support platforms in the edge areas is not lower than that in the central areas, preferably 1.2 to 2.0 times that of the central area. The spacing (center-to-center distance) between adjacent support platforms is 10 mm to 30 mm to ensure continuous and stable support for the submerged area.

[0023] (2) Lifting drive assembly.

[0024] Each molybdenum support platform is independently connected to a lifting drive assembly at its bottom. The lifting drive assembly employs a micro-displacement drive structure, preferably a piezoelectric ceramic micro-displacement actuator, but a stepper motor combined with a lead screw mechanism or a voice coil motor can also be used. The displacement adjustment range is determined based on the MPCVD cavity height and plasma sheath thickness, typically 0–10 mm, preferably 0–5 mm; the displacement adjustment accuracy is not less than 0.01 mm, more preferably not less than 0.005 mm, to achieve sub-millimeter-level height fine-tuning. The drive assembly incorporates a displacement sensor (such as a grating ruler or capacitive sensor) to provide real-time feedback of the actual displacement to the control unit, forming a position closed loop to ensure adjustment accuracy.

[0025] (3) Control unit.

[0026] The control unit is an embedded controller (such as a PLC, FPGA, or industrial computer) that is electrically connected to all lifting drive components. The control unit integrates the following modules: Temperature data acquisition module: Receives signals from the bottom surface temperature sensor, supports multi-channel synchronous acquisition, and has a sampling frequency of not less than 10Hz.

[0027] Temperature field analysis module: Based on the location of each sensor, a temperature distribution map is established, and characteristic quantities such as the temperature difference between the edge region and the center region and the temperature gradient are calculated.

[0028] Height adjustment algorithm module: Built-in PID control algorithm or model-based adaptive adjustment algorithm to calculate the target height increment of each support platform based on temperature deviation.

[0029] Drive control module: Outputs control signals (such as voltage and pulses) to each lifting drive component to achieve independent height adjustment.

[0030] Human-computer interaction interface: Equipped with a touch screen or host computer software, it supports real-time display of temperature field cloud map, historical data recording, manual / automatic mode switching and parameter setting.

[0031] The control unit also features a manual adjustment interface, allowing operators to manually preset the height of the support platform in each area according to specific deposition processes (such as different methane concentrations, gas pressures, and power).

[0032] II. Temperature control methods.

[0033] Based on the above array, the temperature control method provided by this invention includes three core steps: temperature detection, height adjustment, and closed-loop feedback. The inputs, outputs, and logical relationships of each step are clearly defined as follows: Step S1: Temperature detection.

[0034] Input: The actual temperature distribution on the bottom surface during the operation of the MPCVD equipment.

[0035] Operation: Temperature sensors are pre-embedded or attached to the corresponding positions on the submerged surface and on each molybdenum support platform. Sensor types include thermocouples (e.g., K-type, C-type), infrared temperature probes, or fiber optic temperature sensors. To ensure measurement accuracy, each support platform corresponds to at least one temperature sensor; in edge areas with larger temperature gradients, the sensors can be more densely arranged (2-3 sensors per support platform). The sensors convert temperature signals into electrical or digital signals, which are transmitted to the control unit in real time via shielded cables or wirelessly.

[0036] Output: The control unit obtains the temperature value and corresponding coordinates of each measuring point, forming a temperature field data matrix.

[0037] Step S2: Height adjustment.

[0038] Input: Temperature field data output from step S1; preset target temperature range or allowable temperature difference (e.g., the temperature difference between the central area and the edge area is controlled within ±5℃).

[0039] Operation: The control unit compares the measured temperature with the target value. Judgment Criteria: If the measured temperature of a certain area (especially the edge area) is lower than the target value (or lower than the temperature of the central area by more than the threshold), the lifting drive component corresponding to that area is controlled to raise the molybdenum support platform, reducing the distance between the sunken area and the microwave plasma (usually raising it by 0.1 to 1.0 mm can raise the temperature by 5 to 30°C, and the specific relationship needs to be determined according to the equipment calibration curve).

[0040] If the measured temperature in a certain area is higher than the target value, then lower the support platform and increase the distance.

[0041] The adjustment range adopts an adaptive step size: when the temperature difference is large, the single adjustment step size is large (e.g., 0.5mm), and when the temperature difference is small, the step size is small (e.g., 0.01mm) to avoid overshoot.

[0042] Output: Height adjustment instructions (displacement and direction) for each support platform. The height of the support platform is updated after the drive component executes the instructions.

[0043] Step S3: Closed-loop feedback.

[0044] Input: Temperature data re-acquired after step S2; allowable temperature difference range (preset range, such as ±5℃).

[0045] Operation: The control unit continuously executes steps S1 and S2 in a loop. After each adjustment, it waits for the thermal equilibrium time (usually 10-60 seconds, depending on the heat capacity of the substrate), and then collects the temperature again and makes a judgment. When the temperature difference between any two points on the entire surface of the substrate is ≤ the preset range (e.g., ±5℃) and remains stable for at least 3 sampling cycles, the adjustment ends; otherwise, it continues to iterate.

[0046] Output: The final height configuration of each support platform that meets the temperature uniformity requirements; and an adjustment log is generated.

[0047] In addition, this method supports a manual adjustment mode: the operator directly inputs the target height of each support platform through the human-machine interface (e.g., for a specific thickness of the bottom or a special process formula), and the control unit drives the lifting components according to the set value without activating automatic feedback.

[0048] Example

[0049] The following is in conjunction with the appendix Figure 1 A specific embodiment is given, which fully conforms to the parameter settings of the original material. It is only a preferred embodiment of the present invention and does not constitute a limitation on the scope of protection.

[0050] Example parameters.

[0051] MPCVD equipment: 5kW microwave plasma chemical vapor deposition system, working pressure 10-30kPa, methane concentration 2%-5%.

[0052] Substrate: A circular molybdenum sheet with a diameter of 50 mm and a thickness of 2 mm, used for growing diamond films.

[0053] Molybdenum platform lifting array: such as Figure 1 As shown, the system includes 16 molybdenum support platforms 1 (4×4 array) arranged in a matrix, 16 lifting drive components 2, and 1 control unit 3. The molybdenum support platforms 1 are made of high-purity molybdenum (99.99% purity), have a circular structure, and a diameter of 10 mm. The spacing between adjacent molybdenum support platforms 1 is 15 mm (center-to-center distance), with the density of molybdenum support platforms 1 in the bottom four edge regions being 1.5 times that in the central region. Specifically, the four support platforms (2×2) in the central region maintain a 15 mm spacing, while the 12 support platforms in the edge regions increase the number of support platforms per unit area by moving closer to the edge, thus achieving a density of 1.5 times. This density design is specifically optimized to address the polycrystalline growth problem at the edges.

[0054] Lifting drive assembly 2: The bottom of each molybdenum support platform 1 is fixedly connected to a lifting drive assembly 2 by bolts. The lifting drive assembly 2 adopts a piezoelectric ceramic micro-displacement actuator (model P-841.10, PI GmbH, Germany), with a displacement adjustment range of 0 to 5 mm and an adjustment accuracy of 0.005 mm. It has built-in strain gauge displacement feedback, which can realize fine-tuning of the height of the molybdenum support platform 1.

[0055] Temperature sensors: Type K thermocouples, 0.5mm in diameter, 16 in total, are embedded in the back of the recess 4 and the corresponding positions on each support platform 1, and are fixed with thermally conductive adhesive. The temperature measurement accuracy is ±0.5℃. All sensors are connected to the control unit 3 via shielded cables.

[0056] Control Unit 3: An embedded controller based on STM32F407, equipped with a 7-inch touchscreen, built-in temperature feedback module and PID control algorithm, sampling frequency 20Hz. PID control parameters: proportional coefficient Kp=0.8, integral time Ti=2s, derivative time Td=0.5s. Control Unit 3 also has a manual adjustment interface, allowing manual setting of the height parameters of each support platform via the touchscreen.

[0057] Control process (automatic mode).

[0058] Initial setup: All support stages are at the same height (40mm from the microwave window reference plane). The MPCVD equipment is started, with power set to 4kW, gas pressure 15kPa, and methane concentration 3%. After 30 minutes of deposition, data is collected using temperature sensors: the average temperature at 4 measuring points in the central region is 850℃, and the average temperature at 12 measuring points in the edge region is 780℃, with a maximum temperature difference of 70℃. Infrared thermal imaging confirms that the lower edge temperature leads to a slower diamond growth rate at the bottom edge, resulting in polycrystalline rings.

[0059] Automatic control: Activate the automatic adjustment mode of control unit 3, setting the target to a temperature difference of ≤ ±5℃ across the entire surface of the submerged substrate 4. Control unit 3 adjusts according to temperature distribution: The temperature of all 12 edge regions was determined to be lower than that of the center, and the deviation value of each edge measuring point was calculated.

[0060] A PID algorithm was used to calculate the required height for each edge support. Based on the pre-experiment calibration curve (approximately 5.8℃ increase in temperature for every 0.1mm increase), the theoretical initial height was 70 / 5.8×0.1≈1.2mm. After further fine-tuning, the PID algorithm output a target height of 1.2mm.

[0061] Control unit 3 sequentially sends voltage signals to 16 piezoelectric actuators, causing 12 support platforms in the edge area to rise by 1.2 mm, while the 4 support platforms in the center area maintain their original height. The actual displacement feedback display error is ≤0.005 mm.

[0062] Closed-loop feedback: After adjustment and holding the deposition for 20 minutes, the temperature was re-collected: the average temperature at the edge rose to 845℃, while the center remained at 850℃, a temperature difference of 5℃. At this point, control unit 3 detected that the temperature difference at a few edge points still reached 8℃, and further fine-tuned: the corresponding support stage was raised by another 0.1mm (actual displacement feedback confirmed). After stabilizing for another 10 minutes, the lowest temperature across the entire surface was 847℃, and the highest was 852℃, with a temperature difference ≤5℃. Control unit 3 determined that the temperature difference met the requirements for three consecutive sampling cycles (30 seconds in total), stopped adjusting, and entered the holding state.

[0063] Results: After another 6 hours of deposition, the deposited diamond film was removed. The surface of the diamond film was smooth, with no obvious polycrystalline rings at the edges. SEM analysis showed that the grain size at the edges was consistent with that at the center (approximately 10–15 μm), and the full width at half maximum (FWHM) of the Raman spectrum was ≤3.5 cm. -1 The quality is superior to that of diamonds grown on a traditional fixed molybdenum stage (edge ​​polycrystalline layer width > 2 mm).

[0064] Example of manual adjustment mode: For substrates of varying thicknesses (e.g., 3mm thick), the operator can manually switch to manual adjustment mode via the touchscreen of control unit 3 and directly set: the height of the four support platforms in the central area remains at 40mm, while the overall height of the twelve support platforms in the edge area is raised by 0.8mm (to compensate for the temperature drop at the edges due to increased thickness). Control unit 3 drives each lifting drive component according to the set values, without the need for automatic feedback, meeting the requirements for rapid process switching. This manual mode is also suitable for the rapid reproduction of specific process formulations.

[0065] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A molybdenum stage lifting array for controlling the bottom temperature of MPCVD, characterized in that, It includes an array of molybdenum support platforms, lifting drive components, and a control unit; the molybdenum support platforms support different areas of the MPCVD submersion surface, and each molybdenum support platform is independently connected to a lifting drive component; the control unit is electrically connected to all lifting drive components and is used to control the independent operation of each lifting drive component, thereby adjusting the height of the corresponding molybdenum support platform so that the height of different areas of the submersion surface is adapted to the temperature field distribution requirements, thereby achieving uniformity of the submersion temperature field.

2. The molybdenum stage lifting array for controlling the bottom temperature of MPCVD according to claim 1, characterized in that, The molybdenum support platforms are distributed in a matrix, covering the entire support surface of the submerged area; wherein the distribution density of the molybdenum support platforms located at the edge of the submerged area is greater than or equal to the distribution density in the central area.

3. The molybdenum stage lifting array for controlling the bottom temperature of MPCVD according to claim 1, characterized in that, The lifting drive assembly is a micro-displacement drive structure with a displacement adjustment accuracy of not less than 0.01mm; the molybdenum support platform is made of high-purity molybdenum material.

4. The molybdenum stage lifting array for controlling the bottom temperature of MPCVD according to claim 1, characterized in that, The control unit has a built-in temperature feedback module and adjustment algorithm, which is used to automatically adjust the height of each molybdenum support platform according to the received bottom temperature detection data to form a closed-loop control; the control unit also has a manual adjustment interface for manually setting the height parameters of the molybdenum support platforms in each area.

5. The molybdenum stage lifting array for controlling the bottom temperature of MPCVD according to claim 3, characterized in that, The purity of the high-purity molybdenum material is not less than 99.99%; the micro-displacement driving structure is a piezoelectric ceramic micro-displacement actuator, with a displacement adjustment range of 0-5mm and an adjustment accuracy of not less than 0.005mm.

6. A method for controlling the immersion temperature of MPCVD based on the molybdenum stage lifting array according to any one of claims 1 to 5, characterized in that, Includes the following steps: S1: Temperature detection, temperature data of each area of ​​the submerged surface is collected by temperature sensors. The temperature sensors are embedded in the submerged surface at positions corresponding to each molybdenum support platform, and the temperature data is transmitted to the control unit in real time. S2: Height adjustment. The control unit judges the temperature difference between different areas of the submerged area based on the received temperature data, controls the lifting drive component of the corresponding area to adjust the height of the corresponding molybdenum support platform, so that the temperature difference between the submerged edge area and the center area tends to be balanced. S3: Closed-loop feedback. The control unit continuously receives temperature data transmitted by the temperature sensor and adjusts the height of each molybdenum support in real time until it sinks to the bottom. The temperature difference of the entire surface is controlled within the preset range, thereby achieving temperature field homogenization and reducing polycrystalline growth at the diamond edge.

7. The temperature control method according to claim 6, characterized in that, In step S2: when the temperature of the bottom edge region is lower than that of the center region, the control unit controls the lifting drive component corresponding to the edge region to raise the height of the molybdenum support platform and reduce the distance between the bottom edge and the plasma; when the temperature of the bottom edge region is higher than that of the center region, the control unit controls the lifting drive component corresponding to the edge region to lower the height of the molybdenum support platform and increase the distance between the bottom edge and the plasma.

8. The temperature control method according to claim 6, characterized in that, The preset temperature difference range mentioned in step S3 is ±5℃; and the control unit can be manually switched to manual adjustment mode, allowing operators to manually set the height parameters of each molybdenum support stage according to the deposition process requirements.