A diamond-coated cutting tool for wafer dicing and its preparation method

Abstract

This invention relates to a diamond-coated cutting tool for wafer dicing and its preparation method, belonging to the field of semiconductor chip processing and manufacturing. Through dual modification of the diamond surface by oxygen plasma etching and mixed acid carboxylation, combined with argon-ammonia composite plasma activation treatment of aluminum alloy substrate, and composite electrodeposition process, a multi-dimensional interface synergistic strengthening effect is formed. Oxygen plasma etching can construct the micro-rough morphology of diamond surface, strengthen the mechanical intercalation of nickel-based binder to diamond, and mixed acid treatment imparts active carboxyl functional groups to the diamond surface, improves its dispersion stability in the plating solution, and forms coordination bonds with nickel ions to construct an anchoring structure with synergistic mechanical anchoring and chemical bonding, fundamentally alleviating the problems of ultrafine diamond agglomeration and easy abrasive grain detachment.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor chip processing and manufacturing technology, and relates to a diamond-coated cutting tool for wafer dicing and its preparation method. Background Technology

[0002] As the semiconductor industry rapidly develops towards high-density integration and third-generation wide-bandgap semiconductors, wafer dicing, as a core process in chip manufacturing, directly determines chip yield, processing accuracy, and manufacturing costs. The widespread application of high-hardness and brittle third-generation semiconductor wafers such as silicon carbide (SiC) and gallium nitride (GaN) places stringent requirements on the narrow kerf, low chipping, high precision, and long lifespan performance of dicing tools.

[0003] The current mainstream wafer dicing process uses hub-type electroplated diamond hard blades, which are made of high-precision aluminum alloy as the substrate and ultra-fine diamond micropowder is solidified through electrodeposition. They have the advantages of high forming accuracy and good rigidity, and are the core tool for dicing silicon-based and compound semiconductor wafers. However, the existing manufacturing process still has defects: ultra-fine diamond micropowder is prone to agglomeration, and the abrasive distribution is uneven, which can easily lead to local wear and chipping of the cutting edge; the interfacial bonding force between diamond particles and the substrate and binder is insufficient, and abrasive particles are prone to detachment and coating peeling during high-speed dicing; at the same time, it is difficult to achieve a precise match between diamond particle size and concentration and binder hardness, resulting in poor forming accuracy of ultra-thin cutting edges, which cannot meet the requirements of advanced dicing processes.

[0004] Chinese invention patent application CN114871954A discloses a dicing blade for ultra-thin IC wafers and its manufacturing method. The blade consists of a substrate and a composite coating deposited on the substrate surface. The composite coating is composed of an electroplated nickel binder and diamond abrasive, and its thickness is 13-16 μm. The substrate is an aluminum substrate. The portion of the composite coating extending beyond the substrate forms the cutting edge, with a blade length of 380-440 μm. This dicing blade for ultra-thin IC wafers can improve the cutting quality of ultra-thin IC silicon wafers with a thickness range of 50-100 μm. It can also overcome the adhesion of DAF film, reducing the occurrence of typical back chipping, side chipping, and back cracking during conventional blade cutting, thereby improving wafer dicing yield and processing efficiency.

[0005] The above technical solution uses conventional electroplating process to directly prepare nickel-based diamond composite coating on the surface of aluminum substrate. Because a dense inert oxide film is easily formed on the surface of aluminum substrate, the interfacial bonding strength between the nickel-based composite coating and the aluminum substrate is low. At the same time, the diamond abrasive relies only on the mechanical encapsulation of nickel binder and lacks chemical anchoring and interfacial bonding. Under the alternating cutting load of high-speed dicing of ultra-thin IC wafers containing DAF film, the coating is prone to peeling off from the substrate. Summary of the Invention

[0006] The purpose of this invention is to provide a diamond-coated cutting tool for wafer dicing and its preparation method. Carboxyl groups are introduced through plasma etching and acid treatment, and then a diamond composite coating is deposited on a plasma-treated aluminum alloy wheel hub substrate through electrodeposition, thereby improving the adhesion between the cutting tool and the coating and optimizing the wear resistance and efficiency of the coating.

[0007] The objective of this invention can be achieved through the following technical solutions: A method for preparing a diamond-coated cutting tool for wafer dicing includes the following steps: Step 1: Diamond micro powder is etched by plasma to obtain surface roughened diamond; then it is treated with a mixed acid solution to introduce carboxyl groups on its surface to obtain carboxylated diamond.

[0008] Step 2: The cleaned and dried aluminum alloy wheel hub substrate is treated with a mixed plasma of argon and ammonia to obtain a plasma-treated aluminum alloy wheel hub substrate.

[0009] Step 3: Carboxylated diamond and nickel are deposited on the surface of the plasma-treated aluminum alloy wheel hub substrate by electrodeposition to obtain an aluminum alloy wheel hub substrate with diamond coating. After hydrogen removal, grinding, contour correction, aluminum alloy etching and cutting edge treatment, a diamond-coated cutting tool for wafer dicing is obtained.

[0010] Furthermore, the process parameters for plasma etching are as follows: source power of 600W, substrate power of 150-170W, chamber pressure of 20-22mTorr, oxygen flow rate of 100-120sccm, and etching time of 60-65min.

[0011] Furthermore, the specific preparation process of carboxylated diamond is as follows: Surface-roughened diamond that has undergone annealing treatment and a mixed acid solution are added to a reaction vessel and refluxed at 80-85℃ and 300-400r / min for 24-26h. After the reaction is completed, the mixture is cooled to room temperature, filtered, washed, and dried to obtain carboxylated diamond.

[0012] Furthermore, the ratio of surface roughening diamond to mixed acid solution is 2-4g: 600-800mL.

[0013] Furthermore, the volume ratio of concentrated sulfuric acid to concentrated nitric acid in the mixed acid solution is 3:1.

[0014] Furthermore, the annealing treatment is carried out at a temperature of 420-430℃ for 5-6 hours.

[0015] Furthermore, the process parameters for plasma treatment are: gas flow rate of 6-7 L / min, nozzle scanning speed of 2-4 mm / s, generation power of 10-12 W, treatment spacing of 6-8 mm, and time of 5-7 min.

[0016] Furthermore, the volume ratio of argon to ammonia is 90-95:5-10.

[0017] Furthermore, the electrodeposition process parameters are: temperature 50-55℃, stirring speed 460-500 r / min, and current density 2-2.2 A / dm³. 2 The electrodeposition time is 60-70 min.

[0018] Furthermore, the composition of each component in the electroplating solution of the electrodeposition process is as follows: The concentrations of nickel tetrahydrate aminosulfonate are 360-370 g / L, nickel chloride hexahydrate is 40-50 g / L, sodium dodecyl sulfate is 0.08-0.10 g / L, boric acid is 36-40 g / L, butynediol dipropoxy ether is 0.2-0.4 g / L, and carboxylated diamond is 3-4 g / L.

[0019] Furthermore, the pH value of the electroplating solution is 4.0.

[0020] The beneficial effects of this invention are: 1. This invention utilizes a dual modification process of oxygen plasma etching and mixed acid carboxylation on the diamond surface, combined with argon-ammonia composite plasma activation treatment of the aluminum alloy substrate. This, along with the composite electrodeposition process, creates a multi-dimensional synergistic interface strengthening effect. Oxygen plasma etching constructs a micro-rough morphology on the diamond surface, enhancing the mechanical interlocking of the nickel-based binder with the diamond. The mixed acid treatment imparts active carboxyl functional groups to the diamond surface, improving its dispersion stability in the plating solution and forming coordination bonds with nickel ions. This constructs an anchoring structure that combines mechanical anchoring and chemical bonding, fundamentally alleviating the problems of ultrafine diamond agglomeration and easy abrasive grain detachment. Simultaneously, the argon-ammonia composite plasma cleans the aluminum alloy substrate surface and introduces polar active groups, effectively breaking down the binding barriers of the substrate oxide film. This allows the substrate functional groups to form cross-interfacial chemical bonds with the diamond carboxyl groups and nickel ions in the plating solution, further strengthening the interfacial bonding strength between the plating layer and the substrate, and synergistically improving the overall structural stability of the cutting tool.

[0021] 2. This invention relies on the uniform dispersion characteristics of carboxylated diamond, the uniform nucleation effect of the activated matrix, and the grain refinement effect of electroplating additives to achieve synergistic optimization of coating structure and cutting edge performance. The synergistic effect of uniformly dispersed diamond and refined nickel-based grains makes the composite coating structure dense and uniform with regular morphology. The precisely controlled cutting edge structure has both excellent dimensional accuracy and structural rigidity, effectively reducing cutting edge oscillation during the dicing process, reducing the impact and stress concentration on the wafer during the cutting process, and synergistically suppressing the generation of wafer side chipping and back chipping defects from the cutting mechanism level. At the same time, it is suitable for the precision dicing processing requirements of narrow dicing channels.

[0022] 3. This invention utilizes the multi-edge micro-cutting structure of roughened diamond and the hydrophilic and anti-adhesion properties of the carboxylated surface to achieve a synergistic improvement in cutting performance and durability with a high-rigidity nickel-based binder. The micro-cutting structure of the roughened diamond ensures cutting sharpness, while the carboxylated surface can disrupt the adhesion interface of the adhesive film debris, preventing the cutting edge from becoming dull and maintaining stable self-sharpening performance. The dispersed diamond and the high-rigidity binder work together to construct a wear-resistant skeleton, effectively reducing wear during the cutting process, extending the tool's service life, and achieving a synergistic balance between cutting sharpness and durability. Detailed Implementation

[0023] To further illustrate the technical means and effects of the present invention in achieving the intended purpose, the following detailed description of the specific implementation methods, features and effects of the present invention, in conjunction with preferred embodiments, is provided below.

[0024] Example 1: This example provides a diamond-coated cutting tool for wafer dicing, which is prepared through the following steps: S1: Place the diamond micro powder into the vacuum chamber inside the inductively coupled plasma etching machine (model ICP-S-150, purchased from Beijing Zhongke Tailong Electronic Technology Co., Ltd.), seal the chamber and complete the vacuum leak detection pretreatment. Adjust the plasma etching process parameters as follows: source power 600W, substrate power 150W, chamber pressure 20mTorr, introduce high-purity oxygen at a flow rate of 100sccm, and etching time 60min. After etching, stop the gas supply and power supply, allow the chamber to depressurize naturally, and remove the material to obtain surface roughened diamond.

[0025] S2: The surface-roughened diamond was placed in a muffle furnace and heated to 420°C at a heating rate of 5°C / min under air atmosphere. After annealing for 5 hours, 2g of the annealed surface-roughened diamond and 600mL of mixed acid solution (concentrated sulfuric acid and concentrated nitric acid in a volume ratio of 3:1) were added to the reaction vessel. The mixture was refluxed at 80°C and 300r / min for 24 hours. After the reaction was completed, the mixture was cooled to room temperature, filtered, washed with deionized water, and then placed in 0.1mol / L sodium hydroxide solution and 0.1mol / L hydrochloric acid solution, respectively, and stirred for 1 hour each. After centrifugation, washing with water, and drying, carboxylated diamond was obtained.

[0026] S3: The aluminum alloy hub substrate for wafer dicing is ultrasonically cleaned sequentially with acetone, anhydrous ethanol, and deionized water, and then dried. The cleaned and dried aluminum alloy hub substrate is fixed in the preset position of the single-electrode atmospheric pressure plasma generator. The distance between the nozzle and the substrate reference surface is adjusted, and the substrate is treated using an atmospheric pressure discharge plasma system. The gas is 90 vol% argon and 10 vol% ammonia, the gas flow rate is controlled at 6 L / min, the lateral scanning speed of the nozzle is 2 mm / s, the generation power is 10 W, the treatment distance is 6 mm, and the plasma activation treatment is 5 min to obtain the plasma-treated aluminum alloy hub substrate.

[0027] S4: Electrodeposition is performed using a plasma-treated aluminum alloy wheel hub substrate as the cathode and a 99.5% pure, activated nickel plate as the anode. The exposed cathode dimensions are 30mm × 30mm, and the non-electroplated areas are covered with epoxy resin. A composite diamond nickel-based electroplating solution is prepared, with strict control over the concentrations of each component: nickel tetrahydrate sulfamate 360g / L, nickel chloride hexahydrate 40g / L, sodium dodecyl sulfate 0.08g / L, boric acid 36g / L, butynediol dipropoxy ether 0.2g / L, and carboxylated diamond 3g / L. The pH of the electroplating solution is 4.0. The electrodeposition process parameters are: temperature 50℃, stirring speed 460r / min, and current density 2A / dm³. 2 The electrodeposition time was 60 minutes. After electrodeposition, the material was washed with deionized water and dried to obtain an aluminum alloy wheel hub substrate with a diamond coating.

[0028] S5: The aluminum alloy wheel hub substrate with diamond coating is dehydrogenated, kept at a constant temperature of 140℃ for 2 hours, and then ground, contoured, etched and cut to obtain a diamond-coated tool for wafer dicing.

[0029] Example 2: This example provides a diamond-coated cutting tool for wafer dicing, which is prepared through the following steps: S1: Place the diamond micro powder into the vacuum chamber inside the inductively coupled plasma etching machine (model ICP-S-150, purchased from Beijing Zhongke Tailong Electronic Technology Co., Ltd.), seal the chamber and complete the vacuum leak detection pretreatment. Adjust the plasma etching process parameters as follows: source power 600W, substrate power 160W, chamber pressure 21mTorr, introduce high-purity oxygen at a flow rate of 110sccm, and etching time 62.5min. After etching, stop the gas supply and power supply, allow the chamber to depressurize naturally, and remove the material to obtain surface roughened diamond.

[0030] S2: The surface-roughened diamond was placed in a muffle furnace and heated to 425°C at a heating rate of 5°C / min under air atmosphere, and annealed for 5.5 h. 3 g of the annealed surface-roughened diamond and 700 mL of mixed acid solution (volume ratio of concentrated sulfuric acid and concentrated nitric acid of 3:1) were added to the reaction vessel and refluxed at 82°C and 350 r / min for 25 h. After the reaction was completed, the mixture was cooled to room temperature, filtered, washed with deionized water, and then placed in 0.1 mol / L sodium hydroxide solution and 0.1 mol / L hydrochloric acid solution, respectively, and stirred for 1.5 h each. After centrifugation, washing with water, and drying, carboxylated diamond was obtained.

[0031] S3: The aluminum alloy hub substrate for wafer dicing is ultrasonically cleaned sequentially with acetone, anhydrous ethanol, and deionized water, and then dried. The cleaned and dried aluminum alloy hub substrate is fixed in the preset position of the single-electrode atmospheric pressure plasma generator. The distance between the nozzle and the substrate reference surface is adjusted, and the substrate is treated using an atmospheric pressure discharge plasma system. The gas is 92 vol% argon and 8 vol% ammonia, the gas flow rate is controlled at 6.5 L / min, the lateral scanning speed of the nozzle is 3 mm / s, the generation power is 11 W, the treatment distance is 7 mm, and the plasma activation treatment is 6 min to obtain the plasma-treated aluminum alloy hub substrate.

[0032] S4: Electrodeposition is performed using a plasma-treated aluminum alloy wheel hub substrate as the cathode and a 99.5% pure, activated nickel plate as the anode. The exposed cathode dimensions are 30mm × 30mm. The non-electroplated areas are covered with epoxy resin. A composite diamond nickel-based electroplating solution is prepared, with strict control over the concentrations of each component: nickel tetrahydrate sulfamate at 365g / L, nickel chloride hexahydrate at 45g / L, sodium dodecyl sulfate at 0.09g / L, boric acid at 38g / L, butynediol dipropoxy ether at 0.3g / L, and carboxylated diamond at 3.5g / L. The pH of the electroplating solution is 4.0. The electrodeposition process parameters are: temperature 52℃, stirring speed 480r / min, and current density 2.1A / dm³. 2The electrodeposition time was 65 minutes. After electrodeposition, the material was washed with deionized water and dried to obtain an aluminum alloy wheel hub substrate with a diamond coating.

[0033] S5: The aluminum alloy wheel hub substrate with diamond coating is dehydrogenated, kept at a constant temperature of 150℃ for 2.5h, and then ground, contoured, etched with aluminum alloy and cut-out to obtain a diamond-coated tool for wafer dicing.

[0034] Example 3: This example provides a diamond-coated cutting tool for wafer dicing, which is prepared through the following steps: S1: Place the diamond micro powder into the vacuum chamber inside the inductively coupled plasma etching machine (model ICP-S-150, purchased from Beijing Zhongke Tailong Electronic Technology Co., Ltd.), seal the chamber and complete the vacuum leak detection pretreatment. Adjust the plasma etching process parameters as follows: source power 600W, substrate power 170W, chamber pressure 22mTorr, introduce high-purity oxygen at a flow rate of 120sccm, and etching time 65min. After etching, stop the gas supply and power supply, allow the chamber to depressurize naturally, and remove the material to obtain surface roughened diamond.

[0035] S2: The surface-roughened diamond was placed in a muffle furnace and heated to 430°C at a heating rate of 5°C / min under air atmosphere. After annealing for 6 hours, 4g of the annealed surface-roughened diamond and 800mL of mixed acid solution (concentrated sulfuric acid and concentrated nitric acid in a volume ratio of 3:1) were added to the reaction vessel. The mixture was refluxed at 85°C and 400r / min for 26 hours. After the reaction was completed, the mixture was cooled to room temperature, filtered, washed with deionized water, and then placed in 0.1mol / L sodium hydroxide solution and 0.1mol / L hydrochloric acid solution, respectively, and stirred for 2 hours each. After centrifugation, washing with water, and drying, carboxylated diamond was obtained.

[0036] S3: The aluminum alloy hub substrate for wafer dicing is ultrasonically cleaned sequentially with acetone, anhydrous ethanol, and deionized water, and then dried. The cleaned and dried aluminum alloy hub substrate is fixed in the preset position of the single-electrode atmospheric pressure plasma generator. The distance between the nozzle and the substrate reference surface is adjusted, and the substrate is treated using an atmospheric pressure discharge plasma system. The gas is 95 vol% argon and 5 vol% ammonia, the gas flow rate is controlled at 7 L / min, the lateral scanning speed of the nozzle is 4 mm / s, the generation power is 12 W, the treatment distance is 8 mm, and the plasma activation treatment is 7 min to obtain the plasma-treated aluminum alloy hub substrate.

[0037] S4: Electrodeposition is performed using a plasma-treated aluminum alloy wheel hub substrate as the cathode and a 99.5% pure, activated nickel plate as the anode. The exposed cathode dimensions are 30mm × 30mm. The non-electroplated areas are covered with epoxy resin. A composite diamond nickel-based electroplating solution is prepared, with strict control over the concentrations of each component: nickel tetrahydrate sulfamate at 370g / L, nickel chloride hexahydrate at 50g / L, sodium dodecyl sulfate at 0.10g / L, boric acid at 40g / L, butynediol dipropoxy ether at 0.4g / L, and carboxylated diamond at 4g / L. The pH of the electroplating solution is 4.0. The electrodeposition process parameters are: temperature 55℃, stirring speed 500r / min, and current density 2.2A / dm³. 2 The electrodeposition time was 70 minutes. After electrodeposition, the material was washed with deionized water and dried to obtain an aluminum alloy wheel hub substrate with a diamond coating.

[0038] S5: The aluminum alloy wheel hub substrate with diamond coating is dehydrogenated, kept at a constant temperature of 160℃ for 3 hours, and then ground, contoured, etched and cut to obtain a diamond-coated tool for wafer dicing.

[0039] Comparative Example 1: This comparative example provides a diamond-coated cutting tool for wafer dicing. The difference from Example 1 is that step S1 is removed, and diamond micro powder is used instead of surface roughening diamond in step S2.

[0040] Comparative Example 2: This comparative example provides a diamond-coated cutting tool for wafer dicing. The difference from Example 1 is that steps S1 and S2 are removed, and diamond micron powder is used instead of carboxylated diamond in step S4.

[0041] Comparative Example 3: This comparative example provides a diamond-coated cutting tool for wafer dicing. The difference from Example 1 is that step S3 is removed, and in step S4, an aluminum alloy wheel hub substrate is used instead of a plasma-treated aluminum alloy wheel hub substrate.

[0042] The sources of raw materials involved in the examples are as follows: Concentrated sulfuric acid: 98% concentration, purchased from Yangzhou Huafu Chemical Co., Ltd.; Concentrated nitric acid: 68% concentration, purchased from Nanjing Shengqinghe Chemical Co., Ltd.; Nickel tetrahydrate aminosulfonate: purity ≥98%, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd.; Nickel hexahydrate: purity ≥97%, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd.; Sodium dodecyl sulfate: purity ≥90%, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd.; Boric acid: superior grade, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd.; Diamond micron powder: particle size ≤1μm, purchased from Shanghai Aladdin Biochemical Technology Co., Ltd.; Butynediol dipropoxy ether: purity 98%, purchased from Wuhan Kemic Biomedical Technology Co., Ltd.

[0043] The diamond-coated cutting tools for wafer dicing prepared in Examples 1-3 and Comparative Examples 1-3 were subjected to performance testing: Interface bonding strength test: A nano scratch tester was used, with progressive loading of 1-20N and a scratch length of 5mm, and the critical load for coating peeling was recorded.

[0044] Wear resistance test: The wear rate was tested using a ball-and-disc friction and wear tester with GCr15 steel balls in pairs and a 3N load.

[0045] Wafer dicing core performance test: Test conditions: spindle speed 35krpm, dicing 80μm thick IC wafers with DAF film and 100μm wafers without DAF film.

[0046] The performance test results are shown in the table below: Table 1 Performance Test Overview As shown in Table 1, the coating adhesion of Examples 1-3 is higher than that of Comparative Examples 1-3. This may be because the diamond is subjected to plasma etching roughening and mixed acid carboxylation modification in sequence, forming a micro-anchoring structure and carboxyl active functional groups on the diamond surface. At the same time, the aluminum alloy wheel hub substrate is activated by argon-ammonia composite plasma treatment, introducing amino and hydroxyl polar functional groups on the substrate surface. The three work together to form a cross-interface dual bonding mechanism of mechanical anchoring and chemical bonding, which greatly improves the interfacial bonding strength between the coating and the substrate, and between the diamond and the nickel binder.

[0047] As shown in Table 1, the wear rates of Examples 1-3 are lower than those of Comparative Examples 1-3. This may be because the carboxylation modification allows the diamond to be uniformly dispersed in the nickel-based coating without agglomeration. Combined with the dense coating structure brought about by the plasma-activated matrix, and the synergistic strengthening effect of the high-rigidity nickel-based binder and diamond, a stable wear-resistant skeleton is formed, which effectively resists friction and wear during the cutting process.

[0048] As shown in Table 1, the front side chipping, back edge chipping, and stable kerf width of Examples 1-3 are all smaller than those of Comparative Examples 1-3. This may be because the cutting edge has high rigidity and low oscillation characteristics through multiple modifications and synergistic control. Combined with the micro-cutting effect of roughened diamond, the impact and stress concentration on the wafer side during dicing can be reduced. At the same time, the coating uniformity is good and the cutting edge precision is high, which can stably achieve narrow kerf precision cutting.

[0049] As shown in Table 1, the limiting feed rate and cutting edge sharpness retention rate of Examples 1-3 are higher than those of Comparative Examples 1-3. This may be because the synergistic effect of diamond roughening modification, carboxylation modification and matrix plasma activation endows the cutting edge with excellent rigidity and continuous self-sharpening ability. The micro-cutting structure of roughened diamond can ensure the cutting effectiveness of high-speed slicing. The carboxylation surface can inhibit the adhesion of film debris to the cutting edge. In addition, the diamond is evenly dispersed and firmly bonded in the coating. With the stable support of the high-density nickel-based coating, cutting stability and cutting edge sharpness can be maintained at higher feed rates.

[0050] It should be noted that, in this document, terms such as “comprising,” “including,” or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus.

[0051] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention.

Claims

1. A method for preparing a diamond-coated cutting tool for wafer dicing, characterized in that, Includes the following steps: Step 1: Diamond micro powder is etched by plasma to obtain surface roughened diamond; then it is treated with a mixed acid solution to introduce carboxyl groups on its surface to obtain carboxylated diamond; Step 2: The cleaned and dried aluminum alloy wheel hub substrate is treated with a mixed plasma of argon and ammonia to obtain a plasma-treated aluminum alloy wheel hub substrate; Step 3: Carboxylated diamond and nickel are deposited on the surface of the plasma-treated aluminum alloy wheel hub substrate by electrodeposition to obtain an aluminum alloy wheel hub substrate with diamond coating. After hydrogen removal, grinding, contour correction, aluminum alloy etching and cutting edge treatment, a diamond-coated cutting tool for wafer dicing is obtained.

2. The method for preparing a diamond-coated cutting tool for wafer dicing according to claim 1, characterized in that, The process parameters for plasma etching in step one are as follows: source power is 600W, substrate power is 150-170W, chamber pressure is 20-22mTorr, oxygen flow rate is 100-120sccm, and etching time is 60-65min.

3. The method for preparing a diamond-coated cutting tool for wafer dicing according to claim 1, characterized in that, The specific preparation process of the carboxylated diamond described in step one is as follows: Surface-roughened diamond that has undergone annealing treatment and a mixed acid solution are added to a reaction vessel and refluxed at 80-85℃ and 300-400r / min for 24-26h. After the reaction is completed, the mixture is cooled to room temperature, filtered, washed, and dried to obtain carboxylated diamond.

4. The method for preparing a diamond-coated cutting tool for wafer dicing according to claim 3, characterized in that, The ratio of surface roughening diamond to mixed acid solution is 2-4g:600-800mL.

5. The method for preparing a diamond-coated cutting tool for wafer dicing according to claim 4, characterized in that, The volume ratio of concentrated sulfuric acid to concentrated nitric acid in the mixed acid solution is 3:

1.

6. The method for preparing a diamond-coated cutting tool for wafer dicing according to claim 3, characterized in that, The annealing process is carried out at a temperature of 420-430℃ for 5-6 hours.

7. The method for preparing a diamond-coated cutting tool for wafer dicing according to claim 1, characterized in that, The process parameters for plasma treatment in step two are: gas flow rate of 6-7 L / min, nozzle scanning speed of 2-4 mm / s, generation power of 10-12 W, treatment spacing of 6-8 mm, and time of 5-7 min. The volume ratio of argon to ammonia is 90-95:5-10.

8. The method for preparing a diamond-coated cutting tool for wafer dicing according to claim 1, characterized in that, The process parameters of the electrodeposition treatment in step three are temperature of 50-55°C, stirring speed of 460-500 r / min, current density of 2-2.2 A / dm 2 , and electrodeposition time of 60-70 min.

9. A method for preparing a diamond-coated cutting tool for wafer dicing according to claim 8, characterized in that, The composition of each component in the electroplating solution of the electrodeposition process is as follows: The concentrations of nickel tetrahydrate aminosulfonate are 360-370 g / L, nickel chloride hexahydrate is 40-50 g / L, sodium dodecyl sulfate is 0.08-0.10 g / L, boric acid is 36-40 g / L, butynediol dipropoxy ether is 0.2-0.4 g / L, and carboxylated diamond is 3-4 g / L. The pH value of the electroplating solution is 4.

0.

10. A diamond-coated cutting tool for wafer dicing, characterized in that, It is prepared by the method for preparing a diamond-coated tool for wafer dicing as described in any one of claims 1-9.

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