Control methods, apparatus and readable media for reducing the head-to-tail resistivity difference of heavily doped red phosphorus

Abstract

This invention provides a control method, apparatus, and readable medium for reducing the resistivity difference between the head and tail of heavily doped red phosphorus, belonging to the technical field of heavily doped crystal pulling methods. During the equal diameter process, the method acquires the temperature T0 at the start of equal diameter, the current melt mass m, and the initial melt mass m0 at the start of equal diameter. These values ​​are used as inputs for the corresponding equal diameter stage to obtain the temperature compensation value output for that stage. The thermal field temperature is compensated based on the temperature compensation value output for the corresponding equal diameter stage. Therefore, by performing staged dynamic temperature compensation based on the melt mass at different equal diameter stages to control the thermal field temperature, the axial impurity segregation difference caused by temperature field changes during crystal growth is significantly reduced, thereby controlling the resistivity difference between the head and tail of the crystal within ±5%.

Description

Technical Field

[0001] This invention relates to the field of heavy-doped crystal pulling methods, specifically to a control method, apparatus, and readable medium for reducing the head-to-tail resistivity difference of heavily doped red phosphorus. Background Technology

[0002] Red phosphorus, as a semiconductor material with unique optoelectronic properties, has significant application potential in infrared detection, optoelectronic devices, and special semiconductor devices. The preparation of single-crystal red phosphorus typically employs the Czochralski method, which involves melting high-purity polycrystalline red phosphorus under an inert atmosphere and then pulling single-crystal rods from the melt.

[0003] In semiconductor single crystal growth, resistivity is one of the key parameters for evaluating the uniformity and quality of the material's electrical properties. For red phosphorus single crystals, due to their unique physicochemical properties (such as high volatility and significant segregation effect), the resistivity difference (Δρ) between the head and tail of the crystal is often very large under conventional Czochralski pulling processes (Δρ = (Head Res - Tail Res) / Head Res), which severely restricts its application in high-precision devices. Specifically, existing technologies mainly face the following bottlenecks:

[0004] The strong volatilization effect leads to uneven axial doping: Red phosphorus has an extremely high saturated vapor pressure in the high-temperature melt state, and volatilization is extremely severe. During the crystal pulling process, which lasts for tens of hours, the red phosphorus in the melt will continue to volatilize, causing dynamic changes in the melt solid solubility ratio. This change will directly change the effective segregation coefficient of phosphorus impurities in the melt, resulting in a severe uneven distribution of impurity concentration at the head and tail of the crystal, thus producing a huge head-tail resistivity difference.

[0005] Significant segregation effect of impurities: Red phosphorus materials are extremely sensitive to trace impurities. During the Czochralski process, the segregation coefficient of impurities changes with the melt composition due to melt volatilization. Conventional doping compensation methods are difficult to adapt to this dynamic change, resulting in a dramatic nonlinear change in resistivity from the head (initial growth) to the tail (end of growth), with Δρ often exceeding 40%.

[0006] Limitations of existing process control: To suppress volatilization, existing technologies typically employ methods such as increasing the protective gas pressure or using sealed crucibles. However, high-pressure environments can affect the stability of the thermal field and increase crystal defects; while sealed crucibles limit the adjustability of the process. More importantly, these methods cannot provide real-time, precise compensation for melt composition.

[0007] Impact on device performance: The huge difference in resistivity between the beginning and end of the same red phosphorus single crystal rod means that the electrical properties of different parts vary greatly. This not only leads to extremely low material utilization (only some crystal segments meet the device requirements), but also makes it impossible to guarantee the response uniformity of red phosphorus-based devices (such as detectors), which seriously affects the yield and performance consistency of the devices.

[0008] In summary, how to precisely control the stability of melt composition during the red phosphorus crystal pulling process, effectively suppress axial doping fluctuations caused by volatilization and segregation effects, and thus significantly reduce the head-to-tail resistivity difference (Δρ) of red phosphorus single crystals, has become a core technical challenge that urgently needs to be solved in this field. Summary of the Invention

[0009] In view of this, the present invention provides a method for controlling the quality of heavily doped single-crystal seeders to improve seeder quality.

[0010] It is also necessary to provide a device for controlling the quality of heavily doped single crystal seeding.

[0011] It is also necessary to provide a readable medium.

[0012] The technical solution adopted by this invention to solve its technical problem is:

[0013] A method for controlling the resistivity difference between the head and tail of heavily doped red phosphorus during a constant diameter process includes the following steps:

[0014] S1: Obtain the temperature T0 at the start of the equal diameter, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter;

[0015] S2: Take the temperature T0 at the start of the equal diameter stage, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter stage as inputs to obtain the temperature compensation value output for the corresponding equal diameter stage.

[0016] S3: Compensate the thermal field temperature according to the temperature compensation value output by the corresponding equal diameter stage to control the volatilization of impurities in different equal diameter stages.

[0017] Preferably, step S2 specifically includes:

[0018] S21: Use the temperature T0 at the start of equal diameter, the current melt mass m, and the initial melt mass m0 at the start of equal diameter as inputs for the corresponding equal diameter stage control;

[0019] S22: Calculate the current remaining melt percentage based on the current melt mass m, the initial melt mass m0 at the start of constant diameter, and the remaining melt percentage formula;

[0020] S23: Match the corresponding temperature compensation formula based on the current remaining melt percentage;

[0021] S24: Based on the temperature T0 at the start of the equal diameter stage, the current melt mass m, the initial melt mass m0 at the start of the equal diameter stage, and the matching temperature compensation formula, obtain the temperature compensation value output for the corresponding equal diameter stage.

[0022] Preferably, the temperature compensation range is within 0.5℃.

[0023] Preferably, in step S22, the formula for the remaining melt ratio is m / m0 × 100%.

[0024] Preferably, in step S23, when the remaining melt proportion is above 70%, it is the first stage of constant diameter, and the temperature compensation formula is: T = T0 - α × (1 - m / m0), where α is the compensation coefficient for the first stage, and the value range is 0.3~0.8℃;

[0025] When the remaining melt percentage is above 30% but less than 70%, it is the second stage of equal diameter. The temperature compensation formula is: T = T0 + β × ln(m0 / m), where β is the compensation coefficient for the second stage, with a value ranging from 1.5 to 2.5℃. When the remaining melt percentage is above the starting point of the tail end but less than 30%, it is the third stage of equal diameter. The temperature compensation formula is: T = T0 + γ × (m0 / m - 1). ^δ Where γ is the third-stage compensation coefficient, δ is the compensation index, γ ranges from 3 to 5℃, and δ is from 0.5 to 0.7;

[0026] ΔT=T 后 -T 前 ΔT is the temperature compensation value, except for the initial T. 前 Equal to T0, others T 后 T 前 All are calculated through the corresponding stages, T 后 T is the temperature calculated so far. 前 For T 后 The temperature obtained from the previous calculation.

[0027] Preferably, during the equal diameter process, the pulling speed is 1 mm / min to 1.7 mm / min, the crystal rod rotation speed is 8 rpm to 12 rpm, and the crucible rotation speed is 6 rpm to 12 rpm.

[0028] Preferably, the pulling speed of the first equal diameter stage remains stable and constant, and the pulling speed of the first equal diameter stage is 1.4~1.7 mm / min. The pulling speed of the second and third equal diameter stages gradually decreases. The pulling speed of the second equal diameter stage decreases from the pulling speed at the end of the first equal diameter stage to 1.2 mm / min, and the pulling speed of the third equal diameter stage decreases from the pulling speed at the end of the second equal diameter stage to 1 mm / min.

[0029] A control device for reducing the resistivity difference between the head and tail ends of heavily doped red phosphorus includes:

[0030] Acquisition module: used to acquire the temperature T0 at the start of constant diameter, the current melt mass m, and the initial melt mass m0 at the start of constant diameter;

[0031] Control module: Used to take the temperature T0 at the start of equal diameter, the current melt mass m, and the initial melt mass m0 at the start of equal diameter as inputs for the control of the corresponding equal diameter stage, and obtain the temperature compensation value of the output of the corresponding equal diameter stage through the algorithm;

[0032] Adjustment module: Used to adjust the temperature of the thermal field according to the temperature compensation value output by the control module, so as to control the temperature of the thermal field.

[0033] A computing device, characterized in that it comprises: at least one memory and at least one processor;

[0034] The at least one memory is used to store a machine-readable program;

[0035] The at least one processor is configured to invoke the machine-readable program to execute the control method described above for reducing the head-to-tail resistivity difference of heavily doped red phosphorus.

[0036] A computer-readable medium storing computer instructions that, when executed by a processor, cause the processor to perform the control method described above for reducing the head-to-tail resistivity difference of heavily doped red phosphorus.

[0037] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0038] This invention provides a control method for reducing the resistivity difference between the head and tail of heavily doped red phosphorus. During the equal diameter process, the temperature T0 at the start of equal diameter growth, the current melt mass m, and the initial melt mass m0 are obtained. These values ​​are used as inputs for the corresponding equal diameter stage to obtain the temperature compensation value output for that stage. The thermal field temperature is compensated based on the temperature compensation value output for each equal diameter stage. Therefore, by performing staged dynamic temperature compensation based on the melt mass at different equal diameter stages to control the thermal field temperature, the axial impurity segregation difference caused by temperature field changes during crystal growth is significantly reduced, thereby controlling the resistivity difference between the head and tail of the crystal within ±5%.

[0039] This invention, while ensuring resistivity uniformity, reduces unnecessary constant high temperature maintenance time through precise staged temperature modulation, thereby lowering the overall energy consumption of the single crystal furnace and reducing the crystal rod cutting loss rate caused by unqualified resistivity. Attached Figure Description

[0040] Figure 1 This is a schematic diagram illustrating the steps of a control method to reduce the resistivity difference between the head and tail of heavily doped red phosphorus.

[0041] Figure 2 These are resistivity measurement graphs for Example 1, Comparative Example 1, Comparative Example 2, Comparative Example 3, and Comparative Example 4.

[0042] Figure 3 This is a schematic diagram of a control device for reducing the resistivity difference between the head and tail of heavily doped red phosphorus.

[0043] Figure 4 This is a schematic diagram of a computing device.

[0044] Among them: control device 10 for reducing the resistivity difference between the head and tail of heavily doped red phosphorus, acquisition module 100, control module 200, input unit 210, first calculation unit 220, pre-storage unit 230, matching unit 240, second calculation unit 250, adjustment module 300, computing device 20, memory 21, and processor 22. Detailed Implementation

[0045] The technical solution and effects of the present invention will be further described in detail below with reference to the accompanying drawings.

[0046] The technical solution adopted by this invention to solve its technical problem is:

[0047] Please refer to Figure 1 This application provides a method for controlling the difference in resistivity between the head and tail of heavily doped red phosphorus crystals. For heavily doped red phosphorus crystal rods with resistivity <0.002Ω·cm, the method includes the following steps during the equal diameter process:

[0048] S1: Obtain the temperature T0 at the start of the equal diameter, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter;

[0049] S2: Take the temperature T0 at the start of the equal diameter stage, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter stage as inputs to obtain the temperature compensation value output for the corresponding equal diameter stage.

[0050] S3: Compensate the thermal field temperature according to the temperature compensation value output by the corresponding equal diameter stage to control the volatilization of impurities in different equal diameter stages.

[0051] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0052] This invention provides a control method for reducing the resistivity difference between the head and tail of heavily doped red phosphorus. During the equal diameter process, the temperature T0 at the start of equal diameter growth, the current melt mass m, and the initial melt mass m0 are obtained. These values ​​are used as inputs for the corresponding equal diameter stage to obtain the temperature compensation value output for that stage. The thermal field temperature is compensated based on the temperature compensation value output for each equal diameter stage. Therefore, by performing staged dynamic temperature compensation based on the melt mass at different equal diameter stages to control the thermal field temperature, the axial impurity segregation difference caused by temperature field changes during crystal growth is significantly reduced, thereby controlling the resistivity difference between the head and tail of the crystal within ±5%.

[0053] This invention, while ensuring resistivity uniformity, reduces unnecessary constant high temperature maintenance time through precise staged temperature modulation, thereby lowering the overall energy consumption of the single crystal furnace and reducing the crystal rod cutting loss rate caused by unqualified resistivity.

[0054] Furthermore, step S2 specifically includes:

[0055] S21: Use the temperature T0 at the start of the equal diameter stage, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter stage as inputs for the corresponding equal diameter stage;

[0056] S22: Calculate the current melt remaining ratio based on the current melt mass m, the initial melt mass m0 at the start of the constant diameter, and the pre-stored melt remaining ratio formula;

[0057] S23: Match the corresponding temperature compensation formula based on the current remaining melt percentage;

[0058] S24: Based on the temperature T0 at the start of the equal diameter stage, the current melt mass m, the initial melt mass m0 at the start of the equal diameter stage, and the matching temperature compensation formula, obtain the temperature compensation value output for the corresponding equal diameter stage.

[0059] Furthermore, the temperature compensation range is within 0.5℃ to avoid excessive temperature fluctuations during temperature adjustment, which could affect stability.

[0060] Furthermore, in S22, the formula for the remaining melt ratio is m / m0 × 100%.

[0061] Furthermore, in step S23, when the remaining melt proportion is above 70%, it is the first stage of constant diameter. The temperature compensation formula is: T = T0 - α × (1 - m / m0), where α is the compensation coefficient for the first stage, with a value range of 0.3~0.8℃; to make fine adjustments and stabilize the thermal field temperature.

[0062] When the remaining melt proportion is above 30% and below 70%, it is the second stage of equal diameter. The temperature compensation formula is: T = T0 + β × ln(m0 / m), where β is the compensation coefficient for the second stage. When red phosphorus is doped with a target resistivity of 0.001-0.002 Ω·cm, the value range is 1.5~2.5℃. This is to counteract the decrease in the actual temperature of the solid-liquid interface caused by the reduction of melt, actively offset the thermal field drift, and thus maintain the stability of the impurity segregation process.

[0063] When the remaining melt percentage is above the starting point of the process but less than 30%, it is the third stage of constant diameter. The temperature compensation formula is: T = T0 + γ × (m0 / m - 1) ^δ γ is the third-stage compensation coefficient, δ is the compensation index, γ ranges from 3 to 5℃, and δ is from 0.5 to 0.7; in order to suppress the sudden drop in resistivity at the tail and achieve a smooth transition of resistivity.

[0064] ΔT=T 后 -T 前 ΔT is the temperature compensation value, except for the initial T. 前 Equal to T0, others T 后 T 前 All are calculated through the corresponding stages, T 后 T is the temperature calculated so far. 前 For T 后 The temperature calculated previously. Specifically, a data acquisition cycle is defined as a certain time interval (e.g., 10s, 20s, 30s, etc.). The current melt mass *m* within the current time interval is collected. Based on the current melt mass *m*, the initial temperature *T0* at the start of the equal-diameter operation, the initial melt mass *m0* at the start of the equal-diameter operation, and the corresponding temperature compensation formula, the temperature *T* within the current time interval is obtained. 后 The temperature T at the current time 后 T obtained from the previous acquisition cycle 前 By subtracting the difference, the compensated temperature is obtained.

[0065] Furthermore, during the equal diameter process, the pulling speed is 1 mm / min to 1.7 mm / min, the crystal rod rotation speed is 8 rpm to 12 rpm, and the crucible rotation speed is 6 rpm to 12 rpm.

[0066] By using real-time process data such as three-stage temperature compensation, pulling speed, and crucible position for closed-loop adjustment, the lag of traditional single-point or two-stage temperature control is avoided, thus improving process repeatability and yield.

[0067] In one embodiment, the pulling speed of the first equal-diameter stage remains constant at 1.4~1.7 mm / min to maintain a relatively high and stable pulling speed, stabilize the initial thermal field, and lay the foundation for uniform segregation. The pulling speed of the second and third equal-diameter stages gradually decreases. The pulling speed of the second equal-diameter stage decreases from the pulling speed at the end of the first equal-diameter stage to 1.2 mm / min to match the changes in crystal heat dissipation conditions and maintain a constant effective segregation coefficient. The pulling speed of the third equal-diameter stage decreases from the pulling speed at the end of the second equal-diameter stage to 1 mm / min to prolong the residence time of the crystal in the high-temperature region, promote impurity remelting and diffusion, and avoid a sudden drop in tail resistivity.

[0068] In one embodiment, the ingot rotation speed in the first stage of equal diameter is 10 rpm to 12 rpm, and the crucible rotation speed is 6 rpm to 8 rpm, in coordination with the thermal field temperature and pulling speed, to form stable melt convection and lay the foundation for uniform segregation. In the second stage of equal diameter, the ingot rotation speed is reduced from 12 rpm to 10 rpm, and the crucible rotation speed is increased from 8 rpm to 10 rpm, to enhance stirring in the central region of the melt and reduce the thickness of the impurity boundary layer. In the third stage of equal diameter, the ingot rotation speed is 8 rpm, and the crucible rotation speed is 12 rpm, to adopt a strong stirring mode of decreasing ingot rotation speed and increasing in crucible rotation speed, in coordination with the thermal field temperature and pulling speed, to maximize melt mixing, reduce the accumulation of interfacial impurities, and achieve a total temperature rise of 2 to 4°C, so as to counteract the end effect with strong thermal field regulation.

[0069] The present invention will now be described through the following embodiments.

[0070] Example 1:

[0071] Equipment: The same 6-inch CZ (Czochralski) single crystal furnace with identical thermal configuration.

[0072] Materials: Electronic-grade polysilicon from the same batch, and red phosphorus dopant of the same purity.

[0073] Objective: To grow 6-inch N-type... <111> A single-crystal silicon rod with a crystal orientation and a target resistivity of 0.0015 Ω·cm ± 20%.

[0074] Crystal length: 1500 mm for constant diameter growth.

[0075] Environment: Argon protection, pressure 20 Torr.

[0076] Where α1=0.5℃, β=2.0℃, γ=4.0℃, and δ=0.6. The temperature compensation, pulling speed, crystal rotation, and crucible rotation during the constant diameter stage are shown in Table 1.

[0077] Comparative Example 1:

[0078] Throughout the constant diameter growth stage, the heater power remained constant, the temperature T0 at the temperature measurement point remained constant (±0.5℃), the pulling speed remained constant at 1.2 mm / min, the crystal rotation was 10 rpm, and the crucible rotation was 8 rpm; other parameters were the same as in Example 1, and the relevant parameters are shown in Table 1.

[0079] Comparative Example 2:

[0080] During the constant diameter period, a single linear temperature rise compensation was used, with the supplementary formula being T = T0 + 0.015 * L (L is the constant diameter growth length in mm). The pulling speed was kept constant at 1.2 mm / min, the crystal rotation was 10 rpm, and the crucible rotation was 8 rpm. Other parameters were the same as in Example 1, and the relevant parameters are shown in Table 1.

[0081] Comparative Example 3

[0082] The rest is the same as in Example 1. The temperature compensation, pulling speed, crystal rotation, and crucible rotation during the constant diameter stage are shown in Table 1.

[0083] Comparative Example 4

[0084] The rest is the same as in Example 1. The temperature compensation, pulling speed, crystal rotation, and crucible rotation during the constant diameter stage are shown in Table 1.

[0085] Table 1

[0086] Along the axial direction, take coarse test samples from the beginning and end of each segment of the crystal rods pulled in Examples 1 and 1-4, using the four-probe method to measure the resistivity of each sample. The resistivity is as follows: Figure 2 As shown.

[0087] like Figure 2 As shown, the three-stage temperature compensation process for the constant diameter period proposed in this invention can significantly reduce the resistivity difference between the beginning and end of the crystal growth cycle (by more than 30%) compared to traditional isothermal or single-stage compensation processes. This greatly improves the uniformity of the axial resistivity of the crystal rod and increases the proportion of products meeting specifications. Furthermore, compared to comparative examples 3 and 4, it is found that through staged parameter coordinated control (temperature, pulling speed, and rotation speed), the thermal field and mass transport characteristics at different stages of crystal growth are more accurately matched, resulting in better crystal rod quality.

[0088] A control device 10 for reducing the resistivity difference between the head and tail of heavily doped red phosphorus includes:

[0089] Acquisition module 100: used to acquire the temperature T0 at the start of the equal diameter, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter;

[0090] Control module 200: Used to take the temperature T0 at the start of the equal diameter stage, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter stage as inputs, and obtain the temperature compensation value of the PID output of the corresponding equal diameter stage through an algorithm, for example: it can be a PID algorithm (proportional-integral-derivative algorithm).

[0091] Adjustment module 300: used to adjust the temperature of the thermal field according to the temperature compensation value output by the control module 200, so as to control the temperature of the thermal field.

[0092] Furthermore, the control module 200 includes an input unit 210, a first calculation unit 220, a pre-storage unit 230, a matching unit 240, and a second calculation unit 250;

[0093] The input unit 210 is used to input the temperature T0 at the start of the equal diameter, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter.

[0094] The first calculation unit 220 is used to calculate the current remaining proportion of melt based on the current melt mass m and the initial melt mass m0 at the start of the equal diameter input by the input unit 210;

[0095] The pre-storage unit 230 is used to pre-store multiple temperature compensation formulas;

[0096] The matching unit 240 is used to match the melt remaining ratio calculated by the first calculation unit 220 with the temperature supplement formula stored in the pre-storage unit 230;

[0097] The second calculation unit 250 is used to calculate the temperature compensation value output for the corresponding equal diameter stage based on the temperature T0 at the start of equal diameter, the current melt mass m, the initial melt mass m0 at the start of equal diameter input by the input unit 210 and the temperature compensation formula matched by the matching unit 240.

[0098] A computing device 20, characterized in that it comprises: at least one memory 21 and at least one processor 22;

[0099] The at least one memory 21 is used to store a machine-readable program;

[0100] The at least one processor 22, coupled to at least one memory 21, is used to invoke the machine-readable program to execute the control method described above for reducing the head-to-tail resistivity difference of heavily doped red phosphorus.

[0101] A computer-readable medium storing computer instructions, which, when executed by a processor, cause the processor to perform the control method described above for reducing the head-to-tail resistivity difference of heavily doped red phosphorus. Specifically, a system or apparatus equipped with a storage medium storing software program code that implements the functions of any of the embodiments described above, and causing the computer (or CPU or MPU) of the system or apparatus to read and execute the program code stored in the storage medium.

[0102] In this case, the program code read from the storage medium can itself implement the function of any of the above embodiments, and therefore the program code and the storage medium storing the program code constitute part of the present invention.

[0103] Storage media embodiments for providing program code include floppy disks, hard disks, magneto-optical disks, optical disks (such as CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW), magnetic tapes, non-volatile memory cards, and ROMs. Alternatively, program code can be downloaded from a server computer via a communication network.

[0104] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the invention. Those skilled in the art will understand that implementing all or part of the above-described embodiments and making equivalent changes in accordance with the claims of the present invention are still within the scope of the invention.

Claims

1. A method for controlling the difference in resistivity between the head and tail ends of heavily doped red phosphorus, characterized in that, For heavily doped red phosphorus crystal rods with resistivity < 0.002 Ω·cm, the constant diameter process includes the following steps: S1: Obtain the temperature T0 at the start of the equal diameter, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter; S2: Take the temperature T0 at the start of the equal diameter stage, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter stage as inputs to obtain the temperature compensation value output for the corresponding equal diameter stage. S3: Compensate the thermal field temperature according to the temperature compensation value output by the corresponding equal diameter stage to control the volatilization of impurities in different equal diameter stages.

2. The control method for reducing the head-to-tail resistivity difference of heavily doped red phosphorus as described in claim 1, characterized in that, The S2 step specifically includes: S21: Use the temperature T0 at the start of the equal diameter stage, the current melt mass m, and the initial melt mass m0 at the start of the equal diameter stage as inputs for the corresponding equal diameter stage; S22: Calculate the current remaining melt percentage based on the current melt mass m, the initial melt mass m0 at the start of the constant diameter phase, and the remaining melt percentage formula; S23: Match the corresponding temperature compensation formula based on the current remaining melt percentage; S24: Based on the temperature T0 at the start of the equal diameter stage, the current melt mass m, the initial melt mass m0 at the start of the equal diameter stage, and the matching temperature compensation formula, obtain the temperature compensation value output for the corresponding equal diameter stage.

3. The control method for reducing the head-to-tail resistivity difference of heavily doped red phosphorus as described in claim 2, characterized in that, The temperature compensation range is within 0.5℃. In S22, the formula for the remaining melt ratio is m / m0×100%.

4. The control method for reducing the head-to-tail resistivity difference of heavily doped red phosphorus as described in claim 2, characterized in that, In S23, when the remaining melt proportion is above 70%, it is the first stage of constant diameter. The temperature compensation formula is: T = T0 - α × (1 - m / m0), where α is the compensation coefficient for the first stage, and the value range is 0.3~0.8℃. When the remaining melt percentage is above 30% and below 70%, it is the second stage of equal diameter. The temperature compensation formula is: T = T0 + β × ln(m0 / m), where β is the compensation coefficient for the second stage, and its value ranges from 1.5 to 2.5℃. When the remaining melt percentage is above the starting point of the tailing process but less than 30%, it is the third stage of constant diameter. The temperature compensation formula is: T = T0 + γ × (m0 / m - 1) ^δ Where γ is the third-stage compensation coefficient, δ is the compensation index, γ ranges from 3 to 5℃, and δ is from 0.5 to 0.7; ΔT=T 后 -T 前 ΔT is the temperature compensation value, except for the initial T. 前 Equal to T0, others T 后 T 前 All are calculated through the corresponding stages, T 后 T is the temperature calculated so far. 前 For T 后 The temperature obtained from the previous calculation.

5. The control method for reducing the head-to-tail resistivity difference of heavily doped red phosphorus as described in claim 4, characterized in that, During the equal diameter process, the pulling speed is 1 mm / min to 1.7 mm / min, the crystal rod rotation speed is 8 rpm to 12 rpm, and the crucible rotation speed is 6 rpm to 12 rpm.

6. The control method for reducing the head-to-tail resistivity difference of heavily doped red phosphorus as described in claim 5, characterized in that, The pulling speed in the first stage of equal diameter is stable and constant, and the pulling speed in the first stage of equal diameter is 1.4~1.7 mm / min. The pulling speed in the second and third stages of equal diameter gradually decreases. The pulling speed in the second stage of equal diameter decreases from the pulling speed at the end of the first stage of equal diameter to 1.2 mm / min, and the pulling speed in the third stage of equal diameter decreases from the pulling speed at the end of the second stage of equal diameter to 1 mm / min.

7. The control method for reducing the head-to-tail resistivity difference of heavily doped red phosphorus as described in claim 5, characterized in that, In the first stage of equal diameter, the ingot rotation speed is 10 rpm to 12 rpm, and the crucible rotation speed is 6 rpm to 8 rpm; in the second stage of equal diameter, the ingot rotation speed decreases from 12 rpm to 10 rpm, and the crucible rotation speed increases from 8 rpm to 10 rpm; in the third stage of equal diameter, the ingot rotation speed is 8 rpm, and the crucible rotation speed is 12 rpm.

8. A control device for reducing the resistivity difference between the head and tail ends of heavily doped red phosphorus, characterized in that, include: Acquisition module: used to acquire the temperature T0 at the start of constant diameter, the current melt mass m, and the initial melt mass m0 at the start of constant diameter; Control module: Used to take the temperature T0 at the start of equal diameter, the current melt mass m, and the initial melt mass m0 at the start of equal diameter as inputs for the control of the corresponding equal diameter stage, and obtain the temperature compensation value of the output of the corresponding equal diameter stage through the algorithm; Adjustment module: Used to adjust the temperature of the thermal field according to the temperature compensation value output by the control module, so as to control the temperature of the thermal field.

9. A computing device, characterized in that, include: At least one memory and at least one processor; The at least one memory is used to store a machine-readable program; The at least one processor is configured to invoke the machine-readable program to execute the control method for reducing the head-to-tail resistivity difference of heavily doped red phosphorus as described in any one of claims 1 to 7.

10. A computer-readable medium, characterized in that, The computer-readable medium stores computer instructions that, when executed by a processor, cause the processor to perform any one of the control methods for reducing the head-to-tail resistivity difference of heavily doped red phosphorus as described in claims 1 to 7.

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