Methods for determining rotational speed, substrate processing methods, semiconductor device manufacturing methods, process products, and substrate processing apparatus.

Abstract

This invention relates to a method for determining rotational speed, a substrate processing method, a method for manufacturing a semiconductor device, a process product, and a substrate processing apparatus. A technique is provided that can improve the in-plane uniformity of processing a rotating substrate. The method for determining the rotational speed of a substrate used in substrate processing includes a step of supplying a processing gas intermittently to the rotating substrate from its outer edge toward the in-plane direction at regular intervals for a predetermined period T a predetermined number of times K. The method includes: (a) a step of calculating an evaluation value E corresponding to each of the plurality of candidate values ​​N for a selectable rotational speed, based on at least one of the predetermined period T and the supply interval I of the processing gas, the predetermined number of times K, and each of a plurality of candidate values ​​N; and (b) a step of determining, from the plurality of candidate values ​​N, the rotational speed of the substrate used in the substrate processing, based on the evaluation value E calculated for each of the plurality of candidate values ​​N.

Description

Technical Field

[0001] This invention relates to a method for determining rotational speed, a substrate processing method, a method for manufacturing semiconductor devices, process products, and a substrate processing apparatus. Background Technology

[0002] As a step in the manufacturing process of semiconductor devices, the substrate is sometimes processed by repeatedly supplying gas to a rotating substrate (see, for example, Patent Document 1).

[0003] Existing technical documents Patent documents Patent Document 1: International Publication No. 2005 / 088692 Summary of the Invention

[0004] The problem that the invention aims to solve This invention provides a technique that can improve the in-plane uniformity of processing a rotating substrate.

[0005] Methods for solving problems According to one aspect of the present invention, a technique for determining the rotational speed of a substrate, applied in a substrate processing procedure comprising a step of intermittently supplying a processing gas to a rotating substrate from its outer edge toward an in-plane direction at regular intervals for a predetermined period T, K times, wherein the technique comprises: (a) A process of calculating an evaluation value E corresponding to each of the plurality of candidate values ​​N for the selectable rotational speed, based on at least one of the specified period T and the supply interval I of the processing gas, the specified number of times K, and each of the plurality of candidate values ​​N; and (b) A process of determining the rotational speed of the substrate used in the substrate processing from among the plurality of candidate values ​​N based on the evaluation value E calculated for each of the plurality of candidate values ​​N.

[0006] Invention Effects According to the present invention, the in-plane uniformity of the processing performed on the rotating substrate can be improved. Attached Figure Description

[0007] Figure 1 This is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus that can be suitably used in one aspect of the present invention, and is a diagram showing the furnace portion in longitudinal cross-section.

[0008] Figure 2 This is a schematic diagram of a vertical processing furnace of a substrate processing apparatus suitable for use in one embodiment of the present invention. Figure 1 The AA-line cross-sectional view shows the processing furnace section.

[0009] Figure 3 This is a schematic configuration diagram of a controller for a substrate processing apparatus that can be suitably used in one aspect of the invention, and is a block diagram illustrating the control system of the controller.

[0010] Figure 4 This is a diagram illustrating the processing sequence in one embodiment of the present invention.

[0011] Figure 5 (A) and Figure 5 (B) in the diagram is used to illustrate the starting position of the supply of processing gas for each cycle during the specified period.

[0012] Figure 6 (A) ~ Figure 6 (C) is a diagram illustrating a minimax configuration method that can be suitably used in one aspect of the invention.

[0013] Figure 7 (A) in the figure is a graph showing the calculation results when the minimax configuration method that can be suitably used in one aspect of the invention is applied; Figure 7 (B) is a graph showing the distribution of the starting position of the process gas supply for each cycle when the rotation speed is 0.2 rpm; Figure 7 (C) in the figure is a diagram showing the distribution of the starting position of the process gas supply for each cycle when the rotation speed is 4 rpm; Figure 7 (D) in the figure is a graph showing the distribution of the starting position of the process gas supply for each cycle at a rotation speed of 4.5 rpm.

[0014] Figure 8 This is a diagram showing an example of a display screen displayed by the display unit of the present invention.

[0015] Figure 9 This is a diagram illustrating the potential energy that may be suitably used in other aspects of the invention.

[0016] Figure 10 (A) in the figure is a graph showing the calculation results when the minimum energy configuration method that can be suitably used in other aspects of the invention is applied; Figure 10 (B) is a graph showing the distribution of the starting position of the process gas supply for each cycle at a rotation speed of 2.5 rpm; Figure 10 (C) in the figure is a diagram showing the distribution of the starting position of the process gas supply for each cycle when the rotation speed is 3 rpm; Figure 10(D) in the figure is a graph showing the distribution of the starting position of the process gas supply for each cycle at a rotation speed of 4.5 rpm.

[0017] Explanation of reference numerals in the attached figures 200 wafers (substrates) Detailed Implementation

[0018] <One aspect of the invention> The following is mainly based on Figures 1-10 One aspect of the present invention will be described below. It should be noted that the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily correspond to reality. Furthermore, the dimensional relationships and ratios of the elements may not be consistent between different drawings.

[0019] (1) Composition of substrate processing device like Figure 1 As shown, the processing furnace 202 has a heater 207 that serves as a temperature regulator (heating unit). Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. An O-ring 220a, serving as a sealing member, is provided between the manifold 209 and the reaction tube 203. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate a wafer 200, which serves as a substrate. The wafer 200 is processed within this processing chamber 201.

[0020] Inside the processing chamber 201, nozzles 249a and 249b, serving as a first supply unit and a second supply unit, are respectively installed through the side wall of the manifold 209. These nozzles are also referred to as the first nozzle and the second nozzle, respectively. Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively. The nozzles 249a and 249b are different nozzles and are arranged adjacent to each other.

[0021] On gas supply pipes 232a and 232b, mass flow controllers (MFCs) 241a and 241b, serving as flow controllers (flow control units), and valves 243a and 243b, serving as on / off valves, are sequentially installed from the upstream side of the airflow. Gas supply pipe 232c is connected downstream of valve 243a on gas supply pipe 232a. Gas supply pipe 232d is connected downstream of valve 243b on gas supply pipe 232b. On gas supply pipes 232c and 232d, MFCs 241c and 241d, and valves 243c and 243d, are sequentially installed from the upstream side of the airflow.

[0022] like Figure 2 As shown, nozzles 249a and 249b are respectively arranged in a ring-shaped space between the inner wall of the reaction tube 203 and the wafer 200 in a way that faces upwards along the inner wall of the reaction tube 203 from the lower part to the upper part, towards the arrangement direction of the wafer 200. That is, nozzles 249a and 249b are respectively arranged in a region that horizontally surrounds the wafer arrangement area on the side of the wafer arrangement area for arranging the wafers 200. Gas supply holes 250a and 250b are respectively provided on the side of nozzles 249a and 249b as supply ports for supplying gas. Multiple gas supply holes 250a and 250b are provided from the lower part to the upper part of the reaction tube 203.

[0023] A first gas, which serves as the processing gas, is supplied into the processing chamber 201 via gas supply pipe 232a, MFC 241a, valve 243a, and nozzle 249a. The first gas may also be referred to as the raw material gas.

[0024] A second gas, different from the first gas, is supplied as a processing gas from the gas supply pipe 232b through MFC 241b, valve 243b, and nozzle 249b into the processing chamber 201. The second gas may also be referred to as the reaction gas that reacts with the first gas.

[0025] Inactive gases are supplied as treatment gases from gas supply pipes 232c and 232d via MFCs 241c and 241d, valves 243c and 243d, gas supply pipes 232a and 232b, and nozzles 249a and 249b, respectively, into the treatment chamber 201. These inactive gases function as purge gases, carrier gases, and dilution gases.

[0026] The first gas supply system mainly consists of gas supply pipe 232a, MFC 241a, and valve 243a. The second gas supply system mainly consists of gas supply pipe 232b, MFC 241b, and valve 243b. The first gas supply system can also be called the raw material gas supply system. Alternatively, the second gas supply system can also be called the reaction gas supply system. The inactive gas supply system mainly consists of gas supply pipes 232c and 232d, MFC 241c and 241d, and valves 243c and 243d. A gas supply system may be constituted by all or at least any of the above-mentioned supply systems. Nozzles connected to the gas supply pipes constituting the above-mentioned supply systems may also be included in this supply system.

[0027] Any or all of the above-mentioned supply systems can also be configured as an integrated supply system 248 that integrates valves 243a to 243d, MFCs 241a to 241d, etc.

[0028] An exhaust port 233 for venting the atmosphere inside the processing chamber 201 is provided below the side wall of the reaction tube 203. An exhaust pipe 231 is connected to the exhaust port 233. A vacuum pump 246, serving as a vacuum venting device, is connected to the exhaust pipe 231 via a pressure sensor 245 (pressure detector) that detects the pressure inside the processing chamber 201 and an APC (AutoPressure Controller) valve 244 (pressure regulator). The APC valve 244 is configured such that by opening and closing the valve while the vacuum pump 246 is operating, vacuum venting and vacuum venting cessation can be performed inside the processing chamber 201. Furthermore, while the vacuum pump 246 is operating, the pressure inside the processing chamber 201 can be adjusted by regulating the valve opening based on the pressure information detected by the pressure sensor 245. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. It is also possible to include the vacuum pump 246 in the exhaust system.

[0029] Below the manifold 209, a sealing cover 219, serving as a furnace opening cover, is provided, capable of hermetically sealing the lower opening of the manifold 209 via an O-ring 220b. Below the sealing cover 219, a rotation mechanism 267, serving as a rotation drive unit for rotating the crystal boat 217 (described later), is provided. The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the crystal boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the crystal boat 217. The sealing cover 219 is configured to move vertically via a crystal boat lift 115, which serves as a lifting mechanism and is located outside the reaction tube 203.

[0030] The crystal boat 217, which serves as a substrate support, is configured to support multiple wafers 200, for example 25 to 200, in a horizontal orientation and with their centers aligned in the vertical direction, in a multi-layered manner, i.e., arranged at intervals. A heat insulation plate 218 is supported in multiple layers at the lower part of the crystal boat 217.

[0031] A temperature sensor 263, which serves as a temperature detector, is installed inside the reaction tube 203. By adjusting the energization of the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 is adjusted to achieve the desired temperature distribution.

[0032] like Figure 3As shown, the controller 121, serving as the control unit (control unit), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, configured as, for example, a touch panel, serving as both an input and output unit, is connected to the controller 121. The input / output device 122 can function as a display unit. Furthermore, it is configured to allow connection of an external storage device 123 to the controller 121. It should be noted that the substrate processing apparatus can be configured to have one control unit or multiple control units. That is, one control unit can be used to control the processing sequence described later, or multiple control units can be used to control the processing sequence described later. Furthermore, multiple control units can be configured as a control system interconnected via a wired or wireless communication network, or the entire control system can be used to control the processing sequence described later. In this invention, the term "control unit" refers not only to a single control unit, but also to a system comprising multiple control units or a control system composed of multiple control units.

[0033] The storage device 121c is configured such as flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. The storage device 121c records and stores in a readable manner a control program for controlling the operation of the substrate processing apparatus, a process flow describing the substrate processing steps and conditions (described later), etc. The process flow is formed by the controller 121 causing the substrate processing apparatus to execute each step of the substrate processing (described later), and combining them in a way that yields a predetermined result, thus functioning as a program. Hereinafter, the process flow, control program, etc., will be collectively referred to as a program (program product). Additionally, the process flow will be simply referred to as a process. When the term "program" is used in this invention, there may be cases where only the process flow is included, cases where only the control program is included, or cases where both are included. The RAM 121b is configured as a memory area (working area) that temporarily holds programs and data read by the CPU 121a, data input by the operator via the input / output device 122, etc. At least one of the storage device 121c and RAM 121b constitutes a storage unit.

[0034] I / O port 121d is connected to the aforementioned MFC241a~241d, valves 243a~243d, pressure sensor 245, APC valve 244, vacuum pump 246, temperature sensor 263, heater 207, rotating mechanism 267, crystal boat lift 115, etc.

[0035] CPU 121a is configured to read and execute control programs from storage device 121c, and to read process data from storage device 121c based on inputs such as operation commands from input / output device 122. CPU 121a includes a substrate processing control unit 401 and a calculation unit 402.

[0036] The substrate processing control unit 401 is configured to perform the following actions according to the read process information: flow rate regulation of various processing gases based on MFC241a to 241d, opening and closing of valves 243a to 243d, opening and closing of APC valve 244, pressure regulation based on pressure sensor 245 and APC valve 244, starting and stopping of vacuum pump 246, temperature regulation of heater 207 based on temperature sensor 263, rotation and rotation speed regulation of crystal boat 217 based on rotation mechanism 267, and lifting and lowering of crystal boat 217 based on crystal boat lift 115.

[0037] For example, the substrate processing control unit 401 is configured to control the rotation mechanism 267, MFC 241a to 241d, valve 243a to 243d, etc., so that while the wafer 200 is rotated at a certain rotation speed, the first gas, the second gas, the inactive gas and other processing gases are intermittently supplied to the wafer 200 a predetermined number of times K times within a predetermined period T.

[0038] In the storage device 121c, which serves as the storage unit, at least one of the following is stored: a process time T, which is the execution time of the substrate processing step described later, and a cycle time I (also called the supply interval), which is the time for each cycle; a cycle number K; a minimum range (also called step size or resolution) at which the rotational speed can be changed; and an upper and lower limit value for the rotational speed. The cycle time I can also be calculated and expressed as cycle time T / K based on the process time T and the cycle number K. Furthermore, the process time T can also be expressed as process time I based on the cycle time I and the cycle number K. K is used to calculate and express the result.

[0039] The calculation unit 402 calculates evaluation values ​​for the rotating mechanism 267 based on at least one of the process time T and the cycle time I, the number of cycles K, and various candidate values, respectively, as will be described later. The calculation unit 402 is configured to calculate multiple candidate values ​​for the selectable rotation speed based on the minimum amplitude stored in the storage device 121c.

[0040] Furthermore, the substrate processing control unit 401 is configured to enable the wafer 200 to rotate at a rotation speed determined from a plurality of candidate values ​​based on evaluation values ​​calculated in the calculation unit 402.

[0041] The controller 121 can be configured by installing the aforementioned program, recorded and stored in the external storage device 123, into the computer. The external storage device 123 includes, for example, a hard disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, a USB memory, a semiconductor memory such as an SSD, etc. The storage device 121c and the external storage device 123 constitute a computer-readable recording medium. Hereinafter, they will be collectively referred to as recording media. When the term "recording medium" is used in this specification, it may include only the storage device 121c, only the external storage device 123, or both. It should be noted that the program may also be provided to the computer using a communication unit such as the Internet or a dedicated line, without using the external storage device 123.

[0042] (2) Substrate processing process Main use Figure 4 An example of a processing sequence for processing a wafer 200, which serves as a substrate, using the substrate processing apparatus described above as a step in the manufacturing process of a semiconductor device will be explained. In the following description, the operation of each component constituting the substrate processing apparatus is controlled by the controller 121.

[0043] When the term "wafer" is used in this invention, it may refer to the wafer itself, or to a laminate of the wafer and a specified layer or film formed on its surface. When the term "surface of the wafer" is used in this specification, it may refer to the surface of the wafer itself, or to the surface of a specified layer, etc., formed on the wafer. When described in this specification as "forming a specified layer on the wafer," it may refer to forming the specified layer directly on the surface of the wafer itself, or to forming the specified layer on a layer, etc., formed on the wafer. In this specification, the use of the term "substrate" is also synonymous with the use of the term "wafer."

[0044] (Wafer filling and crystal boat loading) After multiple wafers 200 are loaded into the crystal boat 217, the crystal boat 217 supporting the multiple wafers 200 is lifted by the crystal boat elevator 115 and moved into the processing chamber 201.

[0045] (Pressure and temperature regulation) After the crystal boat loading is completed, vacuum exhaust is performed by vacuum pump 246 to bring the processing chamber 201, i.e., the processing space where the wafer 200 exists, to the desired pressure. Additionally, the wafer 200 within the processing chamber 201 is heated by heater 207 to the desired processing temperature. Furthermore, the wafer 200 is rotated based on rotation mechanism 267 at a predetermined rotation speed determined in the steps described later. The venting of the processing chamber 201, the heating of the wafer 200, and the rotation all continue at least until the processing of the wafer 200 is completed.

[0046] Then, execute steps S1 and S2 in sequence.

[0047] [Step S1] In step S1, a first gas is supplied to the wafer 200 in the processing chamber 201.

[0048] Specifically, valve 243a is opened, allowing the first gas to flow into the gas supply pipe 232a. The first gas, with its flow rate regulated by MFC 241a, is supplied to the processing chamber 201 via nozzle 249a and discharged from exhaust port 233. At this time, the first gas is supplied to the wafer 200. Alternatively, valves 243c and 243d can be opened to supply inactive gases to the processing chamber 201 via nozzles 249a and 249b, respectively.

[0049] It should be noted that the processing temperature in this invention refers to the temperature of the wafer 200 or the temperature inside the processing chamber 201, and the processing pressure refers to the pressure inside the processing chamber 201, in other words, the pressure of the space in which the wafer 200 exists. Furthermore, the processing time refers to the duration of the processing. These same principles apply in the following description.

[0050] A first layer is formed on the surface of wafer 200 by supplying a first gas to wafer 200.

[0051] After the first layer is formed, valve 243a is closed to stop the supply of the first gas to the processing chamber 201. Then, a vacuum is purged from the processing chamber 201 to remove any remaining gases (purge). At this time, valves 243c and 243d are opened to supply an inactive gas to the processing chamber 201 through nozzles 249a and 249b. The inactive gas acts as the purging gas.

[0052] [Step S2] After step S1 is completed, the second gas is supplied to the wafer 200 in the processing chamber 201, that is, the first layer formed on the wafer 200.

[0053] Specifically, valve 243b is opened, allowing the second gas to flow into gas supply pipe 232b. The flow rate of the second gas is regulated by MFC 241b, and it is supplied into processing chamber 201 via nozzle 249b and discharged from exhaust port 233. At this time, the second gas is supplied to wafer 200. Alternatively, valves 243c and 243d can be opened to supply inactive gas into processing chamber 201 via nozzles 249a and 249b, respectively.

[0054] By supplying a second gas to the wafer 200, at least a portion of the first layer formed on the wafer 200 is modified to form a second layer.

[0055] After the second layer is formed, valve 243b is closed to stop the supply of the second gas to the processing chamber 201. Then, the gas and other gases remaining in the processing chamber 201 are removed from the processing chamber 201 by the same processing sequence as the purging in step A1.

[0056] [Number of times stipulated for implementation] By performing steps S1 and S2 asynchronously, i.e., intermittently (also called pulsedly), a predetermined layer can be formed on the surface of wafer 200. This cycle is preferably performed multiple times. Specifically, the thickness of the predetermined layer formed in each cycle is preferably thinner than the desired film thickness, and this cycle is performed multiple times until the film thickness of the predetermined layer formed by stacking the predetermined layers reaches the desired film thickness.

[0057] (Post-purge and atmospheric pressure recovery) After performing steps S1 and S2 a predetermined number of times, inactive gases are supplied as purge gases into the processing chamber 201 through nozzles 249a and 249b, and exhaust gases are discharged through exhaust port 233. Then, the atmosphere in the processing chamber 201 is replaced with inactive gases, and the pressure in the processing chamber 201 returns to atmospheric pressure.

[0058] (Crystal boat unloading and wafer removal) Next, the sealing cover 219 is lowered by the crystal boat lift 115, opening the lower end of the manifold 209. Then, the processed wafer 200, supported by the crystal boat 217, is moved from the lower end of the manifold 209 to the outside of the reaction tube 203. After the processed wafer 200 is moved to the outside of the reaction tube 203, it is removed from the crystal boat 217.

[0059] (3) Determination of rotational speed The method for determining the rotation speed of the rotating mechanism 267 that rotates the wafer 200 in the above-mentioned substrate processing process will be described below.

[0060] In the aforementioned substrate processing step, a processing gas is intermittently (also called pulsed) supplied to the wafer 200 rotating at a certain rotational speed from its outer edge toward the in-plane a predetermined number of times (K times) within a predetermined period T. Here, the predetermined period T is the process time from the start of step S1 in the first cycle of the substrate processing step to the end of step S2 in the Kth cycle. Furthermore, the predetermined number of times (K) is the number of times steps S1 and S2, which are multiple steps, are performed as one cycle within the predetermined period T (also called the number of processing steps or the number of cycles). It should be noted that one cycle is not limited to the combination of multiple steps involving the supply of different gases as in this embodiment; for example, a combination of a step supplying one gas and a step stopping the supply of that gas may also constitute one cycle.

[0061] Figure 5 (A) and Figure 5 (B) shows an example of the first gas supply start position at the time point of each cycle of the first gas supply to the wafer 200, in which the processing gas is intermittently supplied to the rotating wafer 200 from the outer edge of the wafer 200 toward the in-plane at certain intervals using the above-described substrate processing apparatus and through the above-described substrate processing steps.

[0062] When processing gas is intermittently supplied to a rotating wafer 200 from its outer edge toward its interior at regular intervals, during the process time T, if the supply cycle of each processing gas cycle (i.e., cycle time I) is synchronized with the rotation cycle of the wafer 200 (i.e., the time it takes for the wafer 200 to rotate one revolution), the starting position of the processing gas supply may sometimes repeat. For example, cases where the timing of the supply cycle being an integer multiple of the rotation cycle coincides with the process time T can be cited. Furthermore, even when the supply cycle of each processing gas cycle is not synchronized with the rotation cycle of the wafer 200 during the process time T, the relationship between the supply cycle and the rotation cycle may vary. Figure 5 As shown in (A), the distribution of the starting position of the process gas supply can sometimes be offset. In these cases, deviations occur in the film thickness and quality of the film formed on wafer 200, and in-plane uniformity deteriorates. In contrast, by appropriately selecting the process gas supply cycle and rotation cycle per cycle, as shown in (A), the distribution of the starting position of the process gas supply can be offset. Figure 5 As shown in (B), the starting positions of the processing gas supply can be uniformly distributed without repetition. With such uniform distribution, the film thickness and quality of the film formed on the wafer 200 become uniform, and the in-plane uniformity is improved.

[0063] Therefore, when supplying the processing gas at the desired supply cycle, in order to evenly allocate the supply start position of the processing gas, for example, a method is sometimes used to calculate one or more ideal rotation cycles (rotation speeds) based on the desired supply cycle.

[0064] However, due to the limitations of the resolution of the motor that rotates the rotating mechanism 267, there are situations where the calculated ideal rotational speed is difficult to achieve in a practical rotating mechanism. For example, there is a limit to the minimum amplitude (also known as step size or resolution) that can characterize the rotation of the motor within one pulse. Furthermore, the rotational speed of the rotating mechanism 267 has upper and lower limits, which are sometimes impossible to achieve due to mechanical constraints. Additionally, there are cases where the rotational speed is limited by the substrate processing conditions.

[0065] Here, if we define the process time T, the number of cycles K, and the starting position of the processing gas supply at the beginning of the k-th cycle (in this method, the starting position of the first gas supply in the k-th cycle) as position P. k Then the rotational speed N can be expressed as follows.

[0066] [Mathematical Expression 1] The positions P1, P2, ..., P mentioned above k ... P K yes Figure 5 Points on a circle that are to be evenly distributed, as shown in (B) in the diagram. That is, if there exists a function F(P1, P2, ..., P...) representing the degree of evenness or offset of the distribution. k ... P K Then, it is possible to calculate the rotational speed within a range that maximizes or minimizes the value of the function F.

[0067] In this method, based on the resolution of the rotating mechanism 267, multiple candidate values ​​N (N1, N2, ..., N...) of the selectable rotation speed are set. M Here, M is the number of candidate values ​​N (i.e., the number of candidates). Based on the M possible candidate values ​​N for rotational speed, at least one of process time T and cycle time I, and the number of cycles K, the following is used: Figure 5 As shown in (B), the rotational speed is determined by ensuring that the distribution of the starting positions of the processing gas supply is non-repeating, dispersed, and evenly distributed. Here, the case of calculating the evaluation value E for determining the rotational speed based on the concept of minimax configuration will be explained.

[0068] (3-1) Calculation of the evaluation value E of the candidate value N First, based on the resolution of the rotating mechanism 267, multiple candidate values ​​N (N1, N2, ... N) for the selectable rotation speed are set.M The multiple candidate values ​​N represent the minimum magnitude N required to change the rotational speed. int The value of the rotational speed is a condition (i.e., a constraint) for the step size, resolution. Additionally, multiple candidate values ​​N can be selected from the upper limit value N of the available rotational speeds. max Choose from the following range. (That is, candidate value N) M =Upper limit N max Upper limit N max For example, besides the case determined by the mechanical constraints of the rotating mechanism 267, there are cases where the setting prevents positional shift or detachment from the wafer 217 during wafer 200 rotation. Furthermore, multiple candidate values ​​N can be selected from the lower limit value N of the selectable rotation speed. min Choose from the above range. (That is, candidate value N1 = lower limit value N) min The lower limit value N min For example, besides setting it to the minimum amplitude N int Besides the case where the value is the same, there are also cases where the value is set to be greater than the minimum amplitude N, depending on the substrate processing conditions. int Cases involving large values, etc. That is, the minimum amplitude N. int Upper limit N max Lower limit value N min The condition is the settable rotation speed of the rotation mechanism 267 that rotates the wafer 200 (i.e., the crystal boat 217 supporting the wafer 200).

[0069] Based on at least one of the process time T and cycle time I, the number of cycles K, and each candidate value N, calculate the values ​​of N1, N2, ..., N2 respectively. M The corresponding evaluation values ​​E (E1, E2, ..., E) are respectively. M For example, E1 is the evaluation value E corresponding to N1, E M Is with N M The corresponding evaluation value E is calculated by the calculation unit 402 based on information stored in the storage device 121c and / or RAM 121b (e.g., process time T and / or cycle time I, cycle number K, lower limit value N). min and / or minimum amplitude N int Upper limit N max The evaluation value E is calculated using (etc.).

[0070] Here, the evaluation values ​​E (E1, E2, ..., E...) M The numbers P1, P2, ..., P3 represent the positions on the outer edge of the wafer 200 opposite the gas supply port 250a of the first gas, representing the start time of the first gas supply in each intermittent gas supply cycle. k ... P KThe value of the uniformity of the intervals between them. The number of positions P is the same as the specified number K.

[0071] (3-2) Determination of rotational speed based on evaluation value E Based on the calculated evaluation value E, the rotational speed of the wafer 200 used in substrate processing is determined from a plurality of candidate values ​​N. In this method, the rotational speed is determined based on the evaluation value E calculated for each candidate value N. In this method, regardless of the limitations such as resolution imposed by the hardware specifications of the rotating mechanism 267, the optimal rotational speed can be selected from the group of candidate rotational speeds that take these limitations into account based on the evaluation value E, thus making it easy and efficient to determine the optimal rotational speed.

[0072] The rotational speed based on the evaluation value E is determined by the calculation unit 402 through the steps shown below. Alternatively, as described later, it can also be determined by the operator based on the evaluation value E displayed on the output screen 302. Furthermore, the rotational speed of the wafer 200 determined in this step is obtained by the substrate processing control unit 401 and set as the rotational speed of the rotation mechanism 267.

[0073] Figure 6 (A) ~ Figure 6 (C) in the diagram illustrates the minimax configuration method used to determine the evaluation value E. Here, the fill rate D is used as the evaluation value E.

[0074] Here, as an example, the following example is used to illustrate: With cycle number K=5, the starting position of the first gas supply in each cycle of the substrate processing time T is as follows... Figure 6 In (A), points P1 to P5 on the circumference of circle C are replaced. It should be noted that in this example, points P1 to P5 are arranged in the order P1→P5 along the circumference, but the order in which they are arranged at the supply start position is not limited to this. For example, based on the relationship between cycle time I and rotational speed N, there is also a case where the supply start position is arranged in the order P1→P4→P2→P5→P3 along the circumference.

[0075] Then, as Figure 6 As shown in (B), points P1 to P5 are defined as the centers of circles Q1 to Q5, respectively. Circles Q1 to Q5 with the same radius centered at points P1 to P5 are drawn. Furthermore, the diameters of each circle Q1 to Q5 are increased until any adjacent circle Q1 touches each other. In this example, adjacent circles Q1 and Q2 touch first. Then, as... Figure 6As shown in (C), the length of the arc CA of the circumference of circle C, which is divided by the smallest circle Q that initially contacts (i.e., the circumference of circle C that repeats the inner region of the smallest circle Q), can be considered the longest possible configuration. This is evaluated when points P1 to P5 are in the closest possible equal configuration. (In...) Figure 6 In section (C), the arc CA is represented by a thick line. Here, the ratio of the arc CA to the circumference of the circle C is defined as the fill rate D. That is, the ratio of the length of the arc CA (which repeats the inner region of the smallest circle Q) to the circumference of the circle C is defined as the fill rate D. Furthermore, for a specified process time T (and / or a specified cycle time I) and a specified number of cycles K, multiple candidate values ​​N (N1, N2, ..., N...) of the rotational speed are used. M The multiple fill rates D (D1, D2, ..., D) calculated under each condition. M In this context, the candidate value N for the rotational speed that maximizes the fill rate D is evaluated as the rotational speed that makes the supply start positions the closest to an equal arrangement. For example, if all supply start positions P1 to P5 within process time T are evenly distributed on circle C, the length of arc CA is the same as the circumference of circle C, and the fill rate D is 1. Furthermore, if at least any two of the supply start positions P1 to P5 within process time T are repeated, the smallest circle Q has a size of 0, therefore the length of arc CA is 0, and the fill rate D is 0.

[0076] That is, when the fill rate D (D1, D2, ..., D...) is used... M ) are used as evaluation values ​​E (E1, E2, ..., E M In the case of ), the evaluation value E (E1, E2, ..., E) M ) can be defined as the sum of the candidate values ​​N (N1, N2, ..., N). M Each of the following positions P1, P2, ..., P within the process time T K The value corresponding to the distance between the two closest available positions P on the circle C. Furthermore, the higher the fill rate D of the candidate value N, i.e., the higher the evaluation value E of the candidate value N, the more likely it is to be evaluated as a candidate value for a rotational speed configured in a way that is non-repetitively dispersed and closer to uniform in the distribution of the processing gas supply start position. On the other hand, the lower the fill rate D of the candidate value N, i.e., the lower the evaluation value E of the candidate value N, the more likely it is to be evaluated as a candidate value for a rotational speed with a repetitive and offset distribution of the processing gas supply start position.

[0077] In addition, for multiple candidate values ​​N (N1, N2, ..., N... M ), corresponding to their respective evaluation values ​​E (E1, E2, ..., E MThe priority of each candidate value N (N1, N2, ..., N) is assigned according to the order of the fill rate D, which is the evaluation value E, from largest to smallest. M Priorities are assigned to increase the priority determined by the rotational speed of the chip 200.

[0078] It should be noted that when multiple candidate values ​​N have the same evaluation value E, they can be assigned the same priority, or different priorities can be assigned among these candidate values ​​N based on other conditions. For example, among multiple candidate values ​​N with the same evaluation value E, the candidate value N with the smaller rotational speed can be assigned a higher priority. Additionally, for example, the position P of the k-th intermittent supply among multiple candidate values ​​N with the same evaluation value E can be assigned a higher priority. k and the position P of the (k+1)th intermittent supply k＋1 Candidate values ​​N that are not adjacent on the circumference of circle C are given higher priority. Alternatively, for example, the position P of the k-th intermittent supply among multiple candidate values ​​N with the same evaluation value E can also be assigned priority. k and the position P of the (k+1)th intermittent supply k＋1 Candidate values ​​N that are further away from the circumference of circle C are given higher priority.

[0079] Then, multiple candidate values ​​N (N1, N2, ..., N) M The candidate value N with the highest priority among the candidate values ​​is determined as the rotational speed of the wafer 200. That is, the rotational speed is determined based on the priority of the candidate value N. It should be noted that this is not limited to determining the rotational speed of the wafer 200 based solely on the candidate value N with the highest priority. For example, other candidate values ​​N besides the one with the highest priority can be determined as the rotational speed of the wafer 200 by considering other conditions from multiple candidate values ​​N with a priority of a certain value or higher. Furthermore, when using the fill rate D as the evaluation value E, it is also possible not to assign a priority and instead determine the candidate value N with the highest fill rate D as the rotational speed of the wafer 200.

[0080] It should be noted that in the above explanation, the positions where the fill rate D is the largest are P1 to P2. K The configuration can also be considered as a minimum-maximum configuration on the sphere, as shown below.

[0081] [Mathematical Expression 2] It is a set of point configurations (number of features K); It is P i With P j The spherical distance.

[0082] That is, in the above formula, calculate the point P defined as the position on the sphere. i With point P j Calculate the spherical distance to point P. i With point P j The minimum spherical distance becomes the maximum configuration. That is, through the above mathematical formulas 1 and 2, based on at least one of the process time T and cycle time I, the cycle number K, and each candidate value N, from multiple candidate values ​​N (N1, N2, ..., N... M Calculate point P from ) i With point P j The minimum value of the spherical distance becomes the maximum configuration.

[0083] Figure 7 (A) ~ Figure 7 In the diagram, (D) represents the candidate value N (N1, N2, ..., N) relative to the rotational speed when the minimax configuration method described above is applied. 60 A graph showing an example of the calculated fill rate D. Figure 7 (A) ~ Figure 7 In (D), the process time is set to 171 seconds, the number of cycles is set to 40, the rotational speed is set to 0.1–6.0 rpm, and the step size is set to 0.1 rpm. Based on the lower and upper limits of the rotational speed and the step size, the candidate number M, which serves as the candidate value N for the settable rotational speed, is set to 60. Figure 7 In (A), the horizontal axis shows the rotational speed [rpm] of the rotating mechanism 267, and the vertical axis shows the fill rate D. Additionally, Figure 7 The points plotted in (A) show the candidate values ​​N (N1, N2, ..., N) for the rotational speed. 60 The values ​​of the fill rate D corresponding to each of the following.

[0084] Figure 7 (B) is a graph showing the angular distribution at the start of the first gas supply for each cycle when the rotational speed is 0.2 rpm and the fill rate D is 0.4. Figure 7 (C) in the figure is a graph showing the angular distribution at the start of the first gas supply for each cycle when the rotational speed is 4 rpm and the fill rate D is 0. Figure 7 (D) in the diagram shows the angular distribution at the start of the first gas supply for each cycle at a rotational speed of 4.5 rpm, where the fill ratio D is 1. It should be noted that... Figure 7 (B) in the middle Figure 7 In any of (D) of the equations, the number of supply start positions shown by the angular distribution at the start of supply is the same as the cycle number K, which is 40.

[0085] like Figure 7 As shown in (B), when the fill rate D is 0.4, there is a deviation in the angle distribution at the start of the supply. Additionally, as... Figure 7 As shown in (C), the angular distribution at the start of the supply is repeated when the fill rate D is 0. Additionally, as... Figure 7 As shown in (D), when the fill rate D is 1, the initial angular distribution of the supply is non-repeatingly dispersed and evenly distributed. That is, at the candidate values ​​N (N1, N2, ..., N...) of the rotational speed... 60 When the fill rate D, which is selected as the evaluation value E, is the highest value (i.e., 1) at rotational speeds of 0.5 rpm, 1.5 rpm, 3.5 rpm, 4.5 rpm, and 5.5 rpm, all supply start positions are evenly distributed and configured, which can improve the in-plane uniformity of the film formed on the wafer 200. It should be noted that when the evaluation value E is the same as that corresponding to multiple candidate values ​​N (0.5 rpm, 1.5 rpm, 3.5 rpm, 4.5 rpm, 5.5 rpm), it is preferable to further select and determine a rotational speed suitable for substrate processing conditions, etc., as the rotational speed of the wafer 200.

[0086] Figure 8 An example of a display screen 300 of the input / output device 122 when determining the rotation speed is shown.

[0087] The display screen 300 includes: an input screen 301 for an operator to input specified conditions via an input / output device 122; and an output screen 302 that outputs the calculation result based on the value input in the input screen 301.

[0088] On input screen 301, the process time T, cycle number K, and maximum rotational speed N are displayed in an input-enabled manner. max Minimum rotational speed N min The step size N of the rotational speed int It should be noted that the cycle time I can be displayed as an input-enabled format instead of the process time T. Additionally, a calculation start button 301A is provided on the input screen 301 to indicate the start of the calculation based on the input information. When the calculation start button 301A is pressed, calculation processing is performed based on the evaluation value E (fill rate D in this method) and other information input to the input screen 301. It should be noted that information related to substrate processing conditions, such as process time T, cycle number K, and cycle time I, can also be obtained by referring to the process information stored in the storage device 121c.

[0089] Output screen 302 displays the maximum value of the process time T, cycle number K, and rotational speed based on the input values ​​entered in input screen 301.max and minimum value N min The step size N of the rotational speed int The calculation results are derived from information such as cycle time I. That is, in the output screen 302, two or more of the multiple candidate values ​​N are displayed together with the fill rate D, which is their respective evaluation value E. Specifically, the fill rate D calculated according to each rotation speed and the priority determined by the rotation speed based on the fill rate D are assigned priority levels sequentially, starting from the highest fill rate D, and displayed. It should be noted that, regarding the priority level, in addition to the fill rate D (evaluation value E), substrate processing conditions such as the supply conditions of the processing gas can also be considered. Furthermore, in this method, all candidate values ​​N and their corresponding fill rates D and priority levels are displayed on the output screen 302, but this display method is not limited to this; it is also possible to selectively display only candidate values ​​N assigned a priority level or higher (e.g., up to the 5th from the top), and their corresponding fill rates D and priority levels.

[0090] Among the multiple rotation speeds displayed on the output screen 302, the candidate value N assigned the highest priority (also known as the rank) is determined as the rotation speed of the wafer 200. It should be noted that the method is not limited to directly selecting / determining the candidate value N assigned the highest priority as the rotation speed. Alternatively, the operator may select and determine the rotation speed of the wafer 200 from the multiple candidate values ​​N displayed on the output screen 302 based on the information displayed on the output screen 302 through the selection unit 305 described later.

[0091] Furthermore, sorting units 304A to 304C are provided for the operator to press on each item on the output screen 302, such as rotation speed, fill rate D, and priority level. By pressing sorting unit 304A, the operator can rearrange and display the multiple rotation speeds displayed on the output screen 302 in ascending or descending order of rotation speed. Similarly, by pressing sorting unit 304B, the operator can rearrange and display the multiple fill rates D displayed on the output screen 302 in descending order of fill rate D. Finally, by pressing sorting unit 304C, the operator can rearrange and display the multiple rotation speeds displayed on the output screen 302 in descending order of priority determined by the rotation speed.

[0092] Furthermore, the rotation speed column configuration of the output screen 302 allows the selection unit 305 to select one rotation speed from the multiple candidate values ​​N displayed. When the operator selects and confirms a rotation speed via the selection unit 305, the substrate processing control unit 401 can control the rotation mechanism 267 based on the rotation speed selected in the selection unit 305.

[0093] [Other aspects of the invention] It should be noted that in the above method, the example of using the filling rate D based on the concept of minimax configuration was given as the evaluation value E for determining the rotation speed, but the potential energy based on the concept of minimum energy configuration can also be used as the evaluation value E.

[0094] Figure 9 This is a diagram used to illustrate the minimum energy configuration method that uses potential energy as the aforementioned evaluation value E.

[0095] In this method, such as Figure 9 As shown, the start position of the first gas supply in each cycle of the substrate processing time T is replaced with point P on circle C. i and point P j And assume at point P i and point P j The relationship between point P is generated. i and point P j The repulsive force F is generated in a way that the closer the points are, the greater the repulsive force. At this time, point P... i and point P j The closer they are, the better point P becomes. i and point P j The higher the potential energy at point P, the better. i and point P j The further away, the more you point to P. i and point P j The lower the potential energy.

[0096] Similarly, at all the supply starting positions P1, P2, ..., P k ..., P K The sum of potential energy related to the repulsive force F generated between points decreases as the points move further apart. For example, when all supply start positions are equally distributed and arranged on circle C in process time T, the sum of potential energy defined between all supply start positions decreases. Furthermore, if there is repetition or offset in the supply start positions in process time T, the sum of potential energy defined between all supply start positions increases.

[0097] Therefore, in this method, the evaluation value E (E1, E2, ..., E...) M ), respectively used at all positions P1, P2, ..., P within the process time T. K The sum of the potential energies defined between them, G(G1, G2, ..., G... M ) or its corresponding value. Additionally, based on at least one of the process time T and cycle time I, the cycle number K, and each candidate value N, multiple candidate values ​​N (N1, N2, ..., N...) are used to... MCalculate the corresponding evaluation values ​​E (E1, E2, ..., E) for each. M The sum of potential energies G(G1, G2, ..., G) M ).

[0098] Then, based on the calculated sum of potential energy G, the rotational speed to be used in the substrate processing is determined from a plurality of candidate values ​​N.

[0099] Furthermore, for multiple candidate values ​​N, the corresponding sum of potential energies G (G1, G2, ..., G...) M The value of ) (or the evaluation value E (E1, E2, ..., E) corresponding to the total potential energy G) M The priority determined by the rotational speed of the wafer 200 is assigned according to the order of the values ​​of the total potential energy G. Specifically, for the priority determined by the rotational speed, the priority level is assigned in ascending order of the total potential energy G. Furthermore, the rotational speed assigned the highest priority is determined as the rotational speed of the wafer 200. Alternatively, it can be configured such that the smaller the total energy G, the higher the corresponding evaluation value E is set, and the higher the total potential energy G, the lower the corresponding evaluation value E is set. In this case, the priority level is assigned in descending order of the evaluation value E.

[0100] Figure 10 (A) ~ Figure 10 In this context, (D) represents a candidate value N (N1, N2, ..., N) relative to the rotational speed, indicating the application of the minimum energy configuration method described above in this method. 60 The graph shows the calculated results of the total potential energy G. Figure 10 (A) ~ Figure 10 In (D), the process time is set to 171 seconds, the number of cycles is set to 40, the rotational speed is set to 0.1–6.0 rpm, and the step size is set to 0.1 rpm. The candidate number M and Figure 7 (A) ~ Figure 7 Similarly, (D) in the value is set to 60. Figure 10 In (A), the horizontal axis represents the rotational speed [rpm] of the rotating mechanism 267, and the vertical axis represents the total potential energy G. Additionally, Figure 10 The points plotted in (A) represent candidate values ​​N (N1, N2, ..., N) for relative rotational velocity. 60 The sum of potential energy G for each of them.

[0101] Figure 10 (B) is a diagram showing the angular distribution at the start of the first gas supply for each cycle at a rotational speed of 2.5 rpm, where the total potential energy G is approximately 5500. Figure 10(C) in the figure shows the angular distribution at the start of the first gas supply in each cycle when the rotational speed is 3 rpm, at which point the total potential energy G is 2000. Figure 10 (D) in the figure is a diagram showing the angular distribution at the start of the first gas supply for each cycle at a rotational speed of 4.5 rpm, where the total potential energy G is less than 1000.

[0102] like Figure 10 As shown in (D) in the diagram, in relation to Figure 10 (B) and Figure 10 When (C) is smaller than the sum of potential energy G, the angular distribution of the first gas supply at the start of each cycle is not repeated and is evenly distributed.

[0103] That is, the smaller the sum of potential energy G, which is the evaluation value E, the more evenly the supply start positions of the first gas in each cycle are distributed circumferentially. Therefore, the rotation speed is determined by prioritizing the rotation speed that minimizes the sum of potential energy G. As a result, all supply start positions are evenly distributed and configured, improving the in-plane uniformity of the film formed on the wafer 200. In other words, the same effect as described above can be achieved in this method.

[0104] The foregoing has specifically described the methods of the present invention. However, the present invention is not limited to the methods described above, and various modifications can be made without departing from its spirit.

[0105] In this invention, as an example, the case where the candidate value with the highest priority among a plurality of candidate values ​​N is determined as the rotation speed of the wafer 200 is described, but the invention is not limited to this. For example, the candidate values ​​N whose respective evaluation values ​​E are within a specified range can also be determined as the rotation speed of the wafer 200. For example, upper or lower limits (i.e., specified ranges) can be set for conditions such as a fill rate D of 0.8 or higher, or a total potential energy G of less than 1000, and the rotation speed of the wafer 200 can be selected and determined from one or more candidate values ​​N contained within these ranges. This prevents the determination of a candidate value N that does not meet the desired evaluation value E as the rotation speed. In addition, the optimal rotation speed can be easily and efficiently determined without the mechanical constraints of the rotation mechanism 267.

[0106] In this invention, the case of intermittently supplying two gases, namely the first gas and the second gas, has been described, but the invention can also be appropriately applied to cases where one or more gases are intermittently supplied. The same effects as described above can be obtained in this method.

[0107] In this invention, the case where the fill rate D applied by the minimax placement method is displayed as the evaluation value E on the display screen 300 of the input / output device 122 used to determine the rotation speed has been described. However, this invention is not limited to this. The total potential energy G applied by the minimum energy placement method can also be displayed as the evaluation value E on the output screen 302 of the display screen 300. Alternatively, both the fill rate D applied by the minimax placement method and the total potential energy G applied by the minimum energy placement method can be displayed as evaluation values ​​E respectively.

[0108] This invention can also be suitably applied, for example, to the formation of films using a single-sheet substrate processing apparatus that processes one or more substrates at a time. Furthermore, this invention can also be suitably applied to the formation of films using a substrate processing apparatus with a cold-wall type processing furnace. Additionally, this invention can also be suitably applied, for example, to the activation of gases by plasma generated inside or outside the processing chamber 201, or to the activation of gases by irradiating them with electromagnetic waves using a lamp or the like.

[0109] When using these substrate processing devices, each process can be performed with the same processing steps and conditions as described above, and the same effect as described above can be obtained.

[0110] The above methods can also be used in combination as appropriate. In this case, the processing steps and conditions can be set to be the same as those in the methods described above.

Claims

1. A method for determining the rotational speed, which is applied in the following substrate processing, wherein the substrate processing includes a step of intermittently supplying a processing gas to a rotating substrate from its outer edge toward an in-plane direction at regular intervals for a predetermined number of times K within a predetermined period T, wherein... The determining method has the following characteristics: (a) A process of calculating an evaluation value E corresponding to each of the plurality of candidate values ​​N for the selectable rotational speed based on at least one of the specified period T and the supply interval I of the processing gas, the specified number of times K, and each of the plurality of candidate values ​​N; and (b) A process of determining the rotational speed of the substrate used in the substrate processing from among the plurality of candidate values ​​N based on the evaluation value E calculated for each of the plurality of candidate values ​​N.

2. The method for determining rotational speed according to claim 1, wherein, The plurality of candidate values ​​N are rotational speed values ​​that satisfy the following condition, which is the minimum range by which the rotational speed can be changed.

3. The method for determining the rotational speed according to claim 1 or 2, wherein, The plurality of candidate values ​​N are selected from a range below the upper limit of the rotational speed.

4. The method for determining the rotational speed according to any one of claims 1 to 3, wherein, The plurality of candidate values ​​N are selected from the range above and below the lower limit of the rotational speed.

5. The method for determining the rotational speed according to any one of claims 1 to 4, wherein, In (b), the plurality of candidate values ​​N are assigned a priority determined by the rotation speed of the substrate, corresponding to the order of the evaluation values ​​E corresponding to the plurality of candidate values ​​N respectively.

6. The method for determining rotational speed according to claim 5, wherein, In (b), among the plurality of candidate values ​​N, the candidate value N that is given the highest priority is determined to be the rotational speed of the substrate.

7. The method for determining the rotational speed according to any one of claims 1 to 5, wherein, In (b), among the plurality of candidate values ​​N, the candidate value N whose corresponding evaluation value E is within the specified range is determined as the rotational speed of the substrate.

8. The method for determining the rotational speed according to any one of claims 1 to 7, wherein, The evaluation value E is: a value representing the uniformity of the intervals between positions P on the outer edge of the substrate opposite the supply port of the processing gas at the time point at which each of the predetermined number of intermittent supplies of the processing gas is initiated.

9. The method for determining rotational speed according to claim 8, wherein, The number of positions P is the same as the number of specified times K.

10. The method for determining the rotational speed according to claim 8 or 9, wherein, In (b), among the plurality of candidate values ​​N, the position P during the k-th intermittent supply. k Position P during the (k+1)th intermittent supply k＋1 The non-adjacent candidate value N on the outer circumference of the substrate is determined as the rotational speed.

11. The method for determining the rotational speed according to any one of claims 8 to 10, wherein, In (b), among the plurality of candidate values ​​N, the position P during the k-th intermittent supply. k Position P during the (k+1)th intermittent supply k＋1 The candidate value N, which is further away from the outer circumference of the substrate, is preferentially determined as the rotational speed.

12. The method for determining the rotational speed according to any one of claims 8 to 11, wherein, The evaluation values ​​E are the values ​​corresponding to the distances between the two closest locations P that can be selected from all locations P within the specified period T.

13. The method for determining the rotational speed according to any one of claims 8 to 11, wherein, The evaluation values ​​E are the values ​​corresponding to the sum of the potential energies defined between all the positions P within the specified period T.

14. A substrate processing method comprising a step of supplying a processing gas intermittently at regular intervals to a substrate rotating at a predetermined rotational speed from the outer edge of the substrate toward an in-plane direction for a predetermined number of times K within a predetermined period T. The specified rotational speed is determined by a process comprising the following steps: (a) A process of calculating an evaluation value E corresponding to each of the plurality of candidate values ​​N for selectable rotational speeds, based on at least one of the specified period T and the supply interval I of the processing gas, the specified number of times K, and each of the plurality of candidate values ​​N; and (b) The process of determining the specified rotational speed from among the plurality of candidate values ​​N based on the evaluation value E calculated for each of the plurality of candidate values ​​N.

15. A method for manufacturing a semiconductor device, comprising a step of supplying a process gas intermittently at regular intervals to a substrate rotating at a predetermined rotational speed from the outer edge of the substrate toward an in-plane direction for a predetermined number of times K over a predetermined period T. The specified rotational speed is determined by a process comprising the following steps: (a) A process of calculating an evaluation value E corresponding to each of the plurality of candidate values ​​N for selectable rotational speeds, based on at least one of the specified period T and the supply interval I of the processing gas, the specified number of times K, and each of the plurality of candidate values ​​N; and (b) The process of determining the specified rotational speed from among the plurality of candidate values ​​N based on the evaluation value E calculated for each of the plurality of candidate values ​​N.

16. A program product that enables a computer equipped with a calculation unit and a display unit to perform the following steps: (a) A step in which the calculation unit calculates an evaluation value E corresponding to each of the plurality of candidate values ​​N for a substrate rotational speed used in substrate processing, based on at least one of a specified period T and a supply interval I of the processing gas, a specified number of times K, and each of a plurality of candidate values ​​N, wherein the substrate processing is a process in which the processing gas is intermittently supplied to a rotating substrate from the outer edge of the substrate toward the in-plane at a certain interval during the specified period T for the specified number of times K; and (b) The step of displaying two or more of the plurality of candidate values ​​N together with the evaluation values ​​E calculated therefor on the display unit.

17. A program product in which a substrate processing apparatus performs the following steps via a computer: The step of supplying a processing gas from the outer edge of a substrate rotating at a specified rotational speed toward the in-plane at regular intervals for a specified number of times K within a specified period T; (a) The step of calculating the evaluation value E corresponding to each of the plurality of candidate values ​​N for selectable rotation speeds based on at least one of the specified period T and the supply interval I of the processing gas, the specified number of times K, and each of the plurality of candidate values ​​N; and (b) The step of determining the specified rotational speed from among the plurality of candidate values ​​N based on the evaluation value E calculated for each of the plurality of candidate values ​​N.

18. A substrate processing apparatus, comprising: A rotation drive unit that rotates the substrate; A gas supply system for supplying processing gas to the substrate from its outer edge toward an in-plane direction; The substrate processing control unit is configured to control the rotation drive unit and the gas supply system to supply the processing gas to the substrate intermittently at certain intervals for a predetermined number of times K within a predetermined period T while rotating the substrate at a predetermined rotation speed. and The calculation unit calculates an evaluation value E corresponding to each of the plurality of candidate values ​​N for the selectable rotational speed, based on at least one of the specified period T and the supply interval I of the processing gas, the specified number of times K, and each of the plurality of candidate values ​​N. The substrate processing control unit is configured to control the substrate to rotate at a predetermined rotation speed determined from among the plurality of candidate values ​​N based on the evaluation value E calculated in the calculation unit for each of the plurality of candidate values ​​N.

19. The substrate processing apparatus according to claim 18, further comprising a storage unit capable of storing at least one of the predetermined period T and the supply interval I of the processing gas, the predetermined number of times K, and the minimum magnitude by which the rotational speed can be changed. The calculation unit is configured to calculate the plurality of candidate values ​​N based on the minimum amplitude stored in the storage unit.

20. The substrate processing apparatus according to claim 18 or 19, further comprising a display unit for displaying two or more of the plurality of candidate values ​​N together with evaluation values ​​E calculated therecorrelationly.

21. The substrate processing apparatus according to claim 20, further comprising a selection unit that allows an operator to select one of the two or more candidate values ​​N displayed on the display unit as the predetermined rotation speed. The substrate processing control unit is configured to control the rotation drive unit based on the predetermined rotation speed selected in the selection unit.

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