Electrochromic device and method for manufacturing the same

Abstract

This invention relates to an electrochromic device and its fabrication method. The electrochromic device includes a first transparent substrate, on which an electrochromic functional layer, a silicon-based inorganic isolation layer, and a second transparent substrate are sequentially disposed. This invention features a silicon-based inorganic isolation layer disposed outside the electrochromic functional layer, constructing a dense, waterproof, and oxygen-proof protective structure. The silicon-based inorganic isolation layer is fabricated using a magnetron sputtering process, significantly improving the device's resistance to damp heat aging and service life. It ensures high light transmittance and color stability in the transparent state. The fabrication process is simple and controllable, low-cost, and suitable for large-size mass production, showing broad prospects for industrial application.

Description

Technical Field

[0001] This invention relates to the field of electrochromic device technology, and in particular to an electrochromic device and its preparation method. Background Technology

[0002] Electrochromic technology, with its advantages of dynamically adjustable light transmittance and wide applicability, is widely used in various fields such as building doors and windows, vehicle sunroofs, automotive rearview mirrors, and military camouflage. As the intelligent development of various industries accelerates, the market is placing increasingly higher demands on the stability, environmental adaptability, and service life of electrochromic devices. The long-term performance of these devices has become a core indicator restricting the large-scale promotion of electrochromic products.

[0003] Currently, conventional electrochromic devices generally employ a hollow encapsulation structure. This involves bonding two pieces of glass together with a spacer strip to form a sealed hollow cavity, which is then filled with argon gas and desiccant particles. The hollow, sealed structure, along with the aid of the inert gas and desiccant, slows down the infiltration of external moisture, reducing its erosion of the electrochromic functional film and ensuring the device's normal operation. This encapsulation method is the mainstream protective measure for current electrochromic devices, effectively blocking external moisture and oxygen intrusion to a certain extent during short-term use, meeting basic operational requirements.

[0004] However, in practical applications, electrochromic devices are exposed to complex outdoor environments for extended periods, continuously subjected to wind, sun, rain, and alternating high and low temperatures. Existing hollow encapsulation structures have inherent defects; as service time increases, the argon gas inside the cavity slowly leaks, gradually reducing the airtightness of the sealing structure. Simultaneously, the built-in desiccant continuously absorbs moisture until it completely fails, losing its drying and protective capabilities. Under these conditions, external moisture continuously and slowly seeps into the device, gradually eroding and damaging the electrochromic functional film, causing film performance degradation, abnormal color-changing response, and a significantly shortened cycle life. This severely affects the stability and service life of the electrochromic device, failing to meet the long-term use requirements under prolonged outdoor conditions.

[0005] In summary, existing electrochromic devices rely on hollow, sealed structures for moisture protection, which offers limited protection and poor durability. Therefore, effectively preventing moisture erosion of the electrochromic functional layer and significantly improving the environmental adaptability and long service life of electrochromic devices has become a pressing technical problem to be solved in this field. Summary of the Invention

[0006] To address the aforementioned technical problems, this invention adds a dense silicon-based inorganic isolation layer to the outside of the electrochromic functional layer, constructing a physical waterproof and oxygen-proof barrier from the film body. This changes the traditional single protection mode that relies solely on external encapsulation structures, effectively compensating for the inherent defects of air leakage and desiccant failure in hollow encapsulation structures over long-term use. It fundamentally blocks the erosion of the electrochromic functional layer by water vapor and oxygen, significantly improving the environmental tolerance and long service life of electrochromic devices.

[0007] To achieve this objective, the present invention adopts the following technical solution: In a first aspect, the present invention provides an electrochromic device, comprising a first transparent substrate, wherein the first transparent substrate comprises, in sequence, an electrochromic functional layer, a silicon-based inorganic isolation layer and a second transparent substrate.

[0008] This invention provides a silicon-based inorganic isolation layer between the electrochromic functional layer and the second transparent substrate. The silicon-based inorganic isolation layer has the characteristics of high density, good chemical stability, excellent light transmittance, and strong water vapor and oxygen barrier capabilities. It can directly form a complete physical protective film on the surface of the electrochromic functional layer, which can continuously block external water vapor and oxygen from penetrating into the interior of the electrochromic functional layer, preventing the functional film from being oxidized or deliquescent and damaged. This invention solves the technical problems of sealing failure and continuous water vapor intrusion leading to device performance degradation and shortened lifespan after long-term use of existing structures, and significantly improves the stability and service life of electrochromic devices.

[0009] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. The purpose and beneficial effects of the present invention can be better achieved and realized through the following preferred technical solutions.

[0010] As a preferred technical solution of the present invention, the silicon-based inorganic isolation layer includes any one or a combination of at least two of silicon dioxide film, silicon nitride film and silicon oxynitride film.

[0011] The preferred silicon-based inorganic insulating layers of this invention are all inorganic dense insulating materials with excellent optical transmittance, which will not affect the dimming and light transmission performance of electrochromic devices; at the same time, they also have extremely strong water vapor and oxygen barrier properties and weather resistance, and are chemically stable, and will not react chemically with the electrochromic functional layer, air, or water vapor.

[0012] As a preferred technical solution of the present invention, the thickness of the silicon-based inorganic isolation layer is 50~500nm, for example, it can be 50nm, 150nm, 280nm, 400nm or 500nm, etc.

[0013] This invention limits the thickness of the silicon-based inorganic isolation layer to the aforementioned range. When the thickness is too low, the film layer is prone to pinholes and insufficient density, failing to form a complete protective barrier and significantly reducing the water vapor barrier effect. When the thickness is too high, the internal stress of the film layer increases, making it prone to cracking and peeling, while also affecting the light transmission performance of the device. This thickness range can perfectly balance the film layer's density, structural stability, and optical performance, ensuring both excellent long-term waterproof and oxygen-proof protection and the light transmission and dimming effect of the electrochromic device, thus avoiding the problems of film layer failure and decreased optical performance.

[0014] As a preferred embodiment of the present invention, the electrochromic device is an insulated glass or laminated glass.

[0015] Preferably, the insulating glass includes a spacer strip disposed between the silicon-based inorganic insulating layer and the second transparent substrate.

[0016] Preferably, the laminated glass includes an adhesive layer disposed between a silicon-based inorganic insulating layer and a second transparent substrate.

[0017] Preferably, the interlayer comprises an SGP film or a PVB film.

[0018] As a preferred technical solution of the present invention, the electrochromic functional layer sequentially includes a first transparent conductive layer, an insulating layer, a cathode electrochromic layer, an ion conducting layer, an anode electrochromic layer, a lithium layer, and a second transparent conductive layer.

[0019] Further, the first transparent conductive layer comprises an ITO film with a thickness of 100-900 nm, the insulating layer comprises a titanium oxide film with a thickness of 25-100 nm, the cathode electrochromic layer comprises a tungsten oxide film with a thickness of 200-500 nm, the ion-conducting layer comprises any one of tungsten oxide film, silicon oxide, aluminum silicon oxide, and nickel tungsten oxide with a thickness of 25-100 nm, the anode electrochromic layer comprises any one of nickel tantalum tungsten oxide, nickel titanium tungsten oxide, and nickel molybdenum tungsten oxide, preferably a nickel tantalum tungsten oxide film with a tungsten, nickel, and tantalum mass ratio of (3.5-4.5):(3.5-4.5):(1-3) and a thickness of 200-500 nm, the lithium film has a thickness of 50-150 nm, and the second transparent conductive layer is an ITO film with a thickness of 200-900 nm.

[0020] Furthermore, the electrochromic device of this application uses glass with a thickness of 0.4 to 5.0 mm as the first transparent substrate and glass with a thickness of 5.0 to 10.0 mm as the second transparent substrate.

[0021] In a second aspect, the present invention provides a method for fabricating an electrochromic device as described in the first aspect, comprising sequentially depositing an electrochromic functional layer and a silicon-based inorganic isolation layer on the surface of a first transparent substrate, and then assembling the substrate with a second substrate to obtain the electrochromic device.

[0022] The assembly described in this invention includes assembling a first substrate coated with an electrochromic functional layer and a silicon-based inorganic isolation layer, as well as an isolation strip or adhesive layer, with a second substrate, and performing conventional edge sealing.

[0023] As a preferred technical solution of the present invention, the silicon-based inorganic isolation layer is coated using a physical magnetron sputtering process.

[0024] This invention employs a physical magnetron sputtering process to prepare a silicon-based inorganic isolation layer. This process results in good film uniformity, high film density, and strong interfacial adhesion. It can form a pinhole-free, highly dense protective film on the surface of the electrochromic functional layer, and the film thickness is highly controllable, allowing for precise matching of the designed thickness range. At the same time, it does not damage the inner electrochromic functional film layer, enabling the fabrication of large-size electrochromic devices at low cost, suitable for large-scale industrial applications.

[0025] As a preferred technical solution of the present invention, the power density of the silicon-based inorganic isolation layer coating is 2~15kw / m, for example, it can be 2kw / m, 6kw / m, 9kw / m, 12kw / m or 15kw / m, etc.

[0026] As a preferred technical solution of the present invention, the deposition rate of the silicon-based inorganic isolation layer is 0.1~1.0 m / min, for example, it can be 0.1 m / min, 0.3 m / min, 0.6 m / min, 0.8 m / min or 1.0 m / min, etc.

[0027] As a preferred technical solution of the present invention, the deposition pressure of the silicon-based inorganic isolation layer is 0.1~1.0 Pa, for example, it can be 0.1 Pa, 0.3 Pa, 0.6 Pa, 0.8 Pa or 1.0 Pa, etc., the argon flow rate is 100~500 sccm, for example, it can be 100 sccm, 200 sccm, 350 sccm, 450 sccm or 500 sccm, etc., and the deposition temperature is 80~250℃, for example, it can be 80℃, 120℃, 170℃, 210℃ or 250℃, etc.

[0028] In this invention, argon and oxygen are introduced when preparing silicon dioxide thin films, argon and nitrogen are introduced when preparing silicon nitride thin films, and argon, oxygen and nitrogen are introduced simultaneously when preparing silicon oxynitride thin films. The oxygen flow rate is 100~500 sccm, and the nitrogen flow rate is 100~500 sccm. When using composite coating of multiple materials, the type of gas introduced can be switched according to the material of the single-layer thin film.

[0029] This invention, by limiting the physical magnetron sputtering process parameters, can stably control the deposition state and microstructure of the silicon-based inorganic isolation layer, ensuring that the thin film grains are dense, the structure is uniform, and there are no obvious pore defects. The low-temperature controllable coating temperature can avoid high-temperature damage to the inner lithium layer, electrochromic layer and other precision functional film layers. Stable gas pressure and gas flow can accurately control the film composition, further improving the water vapor and oxygen barrier performance of the silicon-based isolation layer, while ensuring the interfacial bonding strength between the film layer and the inner functional layer, greatly improving the overall stability and service life of the device.

[0030] Furthermore, each layer of the electrochromic functional layer in this application is prepared using a physical magnetron sputtering process, with the specific process parameters as follows: A first transparent conductive layer is deposited on the surface of a first transparent substrate. The deposition power density is 2~5kw / m, the deposition temperature is 250~350℃, the deposition pressure is 0.1~0.8Pa, the argon flow rate is 200~800sccm, the oxygen concentration is 0.1%~0.6%, and the deposition speed is 0.1~1.0m / min.

[0031] An insulating layer is deposited on the surface of the first transparent conductive layer. The power density is 5~15kw / m, the coating temperature is 250~350℃, the coating pressure is 0.3~0.8Pa, the argon flow rate is 50~1000sccm, the oxygen concentration is 30%~80%, and the coating speed is 0.1~1.0m / min.

[0032] A cathode electrochromic layer is deposited on the surface of the insulating layer with a power density of 10~20kw / m, a coating temperature of 250~380℃, a coating pressure of 0.5~4.0Pa, an argon flow rate of 0~1000sccm, an oxygen concentration of 50%~100%, and a coating speed of 0.1~1.0m / min.

[0033] An ion-conducting layer is deposited on the surface of the cathode electrochromic layer with a power density of 5~10 kW / m, a coating temperature of 30~80℃, a coating pressure of 0.5~4.0 Pa, an argon flow rate of 0~500 sccm, an oxygen concentration of 65%~100%, and a coating speed of 0.1~1.0 m / min.

[0034] An anodic electrochromic layer is deposited on the surface of the ion-conducting layer with a power density of 10~20kw / m, a coating temperature of 30~100℃, a coating pressure of 0.5~4.0Pa, an argon flow rate of 0~500sccm, an oxygen concentration of 60%~100%, and a coating speed of 0.1~1.0m / min.

[0035] A lithium layer is deposited on the surface of the anodic electrochromic layer with a power density of 2~10 kW / m, a coating temperature of 30~80℃, a coating pressure of 0.1~1.0 Pa, an argon flow rate of 100~1000 sccm, and a coating speed of 0.1~1.0 m / min.

[0036] A second transparent conductive layer is deposited on the lithium layer surface with a power density of 2~6 kW / m, a coating temperature of 50~150℃, a coating pressure of 0.1~1.0 Pa, an argon flow rate of 100~500 sccm, an oxygen concentration of 0.1%~1%, and a coating speed of 0.1~1.0 m / min.

[0037] Compared with the prior art, the present invention has at least the following beneficial effects: (1) The present invention sets a silicon-based inorganic isolation layer on the outside of the electrochromic functional layer to block the erosion of the electrochromic core functional layer by water vapor and oxygen. This effectively solves the problems of sealing leakage, desiccant failure, functional film layer damage due to moisture and performance degradation after long-term use of existing devices. It greatly improves the environmental adaptability and long service life of electrochromic devices. The silicon-based inorganic isolation layer has strong interfacial bonding and excellent optical transmittance. It does not affect the device's dimming and light transmission performance. The device's color change abnormality occurs for ≥600 hours at 85℃ and 85% humidity. The visible light transmittance in the transparent state is ≥60%, and there is no color deviation in the transparent state.

[0038] (2) The present invention uses physical magnetron sputtering process to prepare silicon-based inorganic isolation layer. The preparation cost is controllable and it is suitable for the preparation of large-size electrochromic devices. At the same time, the prepared film layer has high density, which can ensure that the silicon-based inorganic isolation layer will not fall off or fail for a long time. The protective stability is far superior to that of traditional external protective structures. Attached Figure Description

[0039] Figure 1 These are schematic diagrams of the film structure of electrochromic devices provided in some embodiments of the present invention; In the figure: 1-First transparent substrate; 2-First transparent conductive layer; 3-Insulating layer; 4-Cathode electrochromic layer; 5-Ion conducting layer; 6-Anode electrochromic layer; 7-Lithium layer; 8-Second transparent conductive layer; 9-Silicon-based inorganic isolation layer; Figure 2 This is a schematic diagram of the electrochromic device structure provided in Embodiment 1 of the present invention; Figure 3 This is a schematic diagram of the electrochromic device structure provided in Embodiment 5 of the present invention. Detailed Implementation

[0040] To facilitate understanding of the present invention, the following embodiments are provided. Those skilled in the art should understand that these embodiments are merely illustrative and should not be construed as limiting the scope of the invention.

[0041] Example 1 This embodiment provides an electrochromic device, which includes a 2.0 mm thick glass substrate as a first transparent substrate and an 8.0 mm thick glass substrate as a second transparent substrate. Figure 1 As shown, the surface of the first transparent substrate is sequentially stacked with: a first transparent conductive layer (ITO thin film, 500nm thick), an insulating layer (titanium oxide thin film, 60nm thick), a cathode electrochromic layer (tungsten oxide thin film, 350nm thick), an ion-conducting layer (tungsten oxide thin film, 60nm thick), an anode electrochromic layer (tungsten oxide nickel-tantalum thin film, tungsten, nickel, tantalum mass ratio 4:4:2, 350nm thick), a lithium layer (100nm thick), a second transparent conductive layer (ITO thin film, 500nm thick), and a silicon-based inorganic insulating layer (silicon dioxide thin film, 200nm thick); the electrochromic device is a hollow glass, such as... Figure 2 As shown, it also includes an aluminum spacer strip disposed between the silicon-based inorganic isolation layer and the second transparent substrate; The electrochromic device in this embodiment is fabricated using the following process: The functional films were prepared sequentially using a physical magnetron sputtering process: An ITO first transparent conductive layer was deposited on the substrate surface at a power density of 3 kW / m², a deposition temperature of 300 °C, a deposition pressure of 0.4 Pa, an argon flow rate of 500 sccm, an oxygen concentration of 0.3%, and a deposition speed of 0.5 m / min; a titanium oxide insulating layer was then deposited on the surface of the first transparent conductive layer at a power density of 10 kW / m², a deposition temperature of 300 °C, a deposition pressure of 0.5 Pa, an argon flow rate of 600 sccm, an oxygen concentration of 50%, and a deposition speed of 0.5 m / min. n; A tungsten oxide cathode electrochromic layer is deposited on the surface of the insulating layer at a power density of 15 kW / m, a coating temperature of 320°C, a coating pressure of 2.0 Pa, an argon flow rate of 500 sccm, an oxygen concentration of 80%, and a coating speed of 0.5 m / min; a tungsten oxide ion-conducting layer is deposited on the surface of the cathode electrochromic layer at a power density of 8 kW / m, a coating temperature of 50°C, a coating pressure of 2.0 Pa, an argon flow rate of 200 sccm, an oxygen concentration of 80%, and a coating speed of 0.5 m / min; a tungsten oxide nickel-tantalum anode is deposited on the surface of the ion-conducting layer. The anodic electrochromic layer has a tungsten, nickel, and tantalum mass ratio of 4:4:2, a power density of 15 kW / m², a coating temperature of 60°C, a coating pressure of 2.0 Pa, an argon flow rate of 200 sccm, an oxygen concentration of 70%, and a coating speed of 0.5 m / min. A lithium layer is deposited on the anodic electrochromic layer surface at a power density of 6 kW / m², a coating temperature of 50°C, a coating pressure of 0.5 Pa, an argon flow rate of 500 sccm, and a coating speed of 0.5 m / min. An ITO second transparent conductive layer is deposited on the lithium layer surface at a power density of 4 kW / m² and a coating temperature of [missing information]. The coating process is as follows: 100℃, coating pressure 0.5Pa, argon flow rate 300sccm, oxygen concentration 0.5%, coating speed 0.5m / min; Silica inorganic isolation layer is deposited on the surface of the second transparent conductive layer at a coating temperature of 80℃, power density of 8kW / m, coating pressure of 0.5Pa, argon flow rate of 300sccm, oxygen flow rate of 300sccm, and coating speed of 0.5m / min. After the coating is completed, it is assembled with the second transparent substrate through the isolation strip. The hollow part is filled with argon and then sealed with sealant to obtain the electrochromic device.

[0042] Example 2 This embodiment provides an electrochromic device, which is the same as that in Embodiment 1 except that the coating temperature of the silicon dioxide inorganic isolation layer is 250°C.

[0043] Example 3 This embodiment provides an electrochromic device, which is the same as that in Embodiment 2 except that the thickness of the silicon dioxide inorganic isolation layer is 50 nm.

[0044] Example 4 This embodiment provides an electrochromic device, which is the same as that in Embodiment 1 except that the thickness of the silicon dioxide inorganic isolation layer is 500 nm.

[0045] Example 5 This embodiment provides an electrochromic device. The silicon-based inorganic isolation layer of the electrochromic device is made of silicon oxynitride. During the fabrication process, the silicon oxynitride inorganic isolation layer is deposited using argon gas at a flow rate of 300 sccm, oxygen gas at a flow rate of 200 sccm, and nitrogen gas at a flow rate of 200 sccm. Figure 3 As shown, after all the coatings are completed, the SGP film is assembled with the second transparent substrate, and the rest is the same as in Example 1.

[0046] Example 6 This embodiment provides an electrochromic device, which is the same as that in Embodiment 5 except that the coating temperature of the silicon oxynitride inorganic isolation layer is 250°C.

[0047] Example 7 This embodiment provides an electrochromic device, which is the same as that in Embodiment 6 except that the thickness of the silicon oxynitride inorganic isolation layer is 50 nm.

[0048] Example 8 This embodiment provides an electrochromic device, which is the same as that in Embodiment 6 except that the thickness of the silicon oxynitride inorganic isolation layer is 500 nm.

[0049] Example 9 This embodiment provides an electrochromic device. Except for the silicon-based inorganic isolation layer, which is made of silicon nitride, the process of depositing the silicon nitride inorganic isolation layer involves argon gas flow rate of 300 sccm and nitrogen gas flow rate of 300 sccm. All other aspects are the same as in Embodiment 5.

[0050] Example 10 This embodiment provides an electrochromic device, which is the same as that in Embodiment 9 except that the coating temperature of the silicon nitride inorganic isolation layer is 250°C.

[0051] Example 11 This embodiment provides an electrochromic device, which is the same as that in Embodiment 9 except that the thickness of the silicon nitride inorganic isolation layer is 50 nm.

[0052] Example 12 This embodiment provides an electrochromic device, which is the same as that in Embodiment 9 except that the thickness of the silicon nitride inorganic isolation layer is 500 nm.

[0053] Example 13 This embodiment provides an electrochromic device. Except for the preparation of the silicon-based inorganic isolation layer, which is carried out by atomic deposition, the electrochromic device is the same as that in Embodiment 1. The preparation cost of this embodiment is greatly increased, and it is difficult to prepare large-size electrochromic devices.

[0054] Comparative Example 1 This comparative example provides an electrochromic device, which is the same as that in Example 1 except that the electrochromic device does not have a silicon-based inorganic isolation layer.

[0055] Comparative Example 2 This comparative example provides an electrochromic device, which is the same as that in Example 1 except that the material of the insulating layer is replaced with aluminum oxide.

[0056] Comparative Example 3 This comparative example provides an electrochromic device, which is the same as that in Example 1 except that the material of the insulating layer is replaced with chromium metal.

[0057] Test methods The electrochromic devices prepared in the various embodiments and comparative examples of the present invention were subjected to a double 85% damp heat aging test. The test environment temperature was 85°C and the relative humidity was 85%. The duration of the device showing abnormal color change was recorded. The visible light transmittance of the device in the transparent state was measured using a spectrophotometer. The chromaticity b value of the electrochromic device in the transparent state was measured using a spectrophotometer. The test results are summarized in Table 1.

[0058] Test Results Table 1 The test results show that: (1) As can be seen from Examples 1 to 12, the present invention uses three silicon-based materials, namely silicon dioxide, silicon oxynitride and silicon nitride, as inorganic isolation layers. All of these can effectively improve the device's resistance to damp heat aging, extend the time when the device shows discoloration abnormalities, and ensure the basic optical performance of the device.

[0059] (2) As can be seen from Examples 1 and 13, the present invention uses magnetron sputtering to prepare silicon-based inorganic isolation layers. Compared with atomic deposition, it can significantly reduce the preparation cost while achieving good moisture and heat resistance of the device. At the same time, it is suitable for the large-scale preparation of large-size electrochromic devices. It effectively solves the technical defects of poor mass production and high cost of traditional atomic deposition process, and has better engineering application and industrialization value.

[0060] (3) As can be seen from Example 1 and Comparative Examples 1 to 3, compared with devices without inorganic isolation layers, the addition of silicon-based inorganic isolation layers in this invention can significantly improve the device's resistance to damp heat aging and prevent the internal functional film layers from being rapidly eroded and degraded by water vapor and oxygen. Compared with materials such as alumina and chromium metal, the silicon-based isolation layer material used in this invention has no optical defects, which can ensure the light transmittance of the electrochromic device in the transparent state. The transparent state has excellent color performance and no problems such as a significant reduction in light transmittance or serious color shift.

[0061] In summary, this invention significantly improves the resistance to damp heat aging and service life of electrochromic devices by depositing a silicon-based inorganic isolation layer on the electrochromic functional layer and preparing it using magnetron sputtering technology. It also ensures excellent optical transmittance and color consistency of the devices. At the same time, the process cost is low, the mass production capability is strong, and the overall performance and application advantages are significant.

[0062] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. An electrochromic device, characterized in that, It includes a first transparent substrate, on which an electrochromic functional layer, a silicon-based inorganic isolation layer, and a second transparent substrate are sequentially included.

2. The electrochromic device according to claim 1, characterized in that, The silicon-based inorganic isolation layer includes any one or a combination of at least two of silicon dioxide thin films, silicon nitride thin films, and silicon oxynitride thin films.

3. The electrochromic device according to claim 1 or 2, characterized in that, The thickness of the silicon-based inorganic isolation layer is 50~500nm.

4. The electrochromic device according to any one of claims 1 to 3, characterized in that, The electrochromic device is insulated glass or laminated glass; Preferably, the insulating glass includes a spacer strip disposed between a silicon-based inorganic insulating layer and a second transparent substrate; Preferably, the laminated glass includes an adhesive layer disposed between a silicon-based inorganic insulating layer and a second transparent substrate; Preferably, the interlayer comprises an SGP film or a PVB film.

5. The electrochromic device according to any one of claims 1 to 4, characterized in that, The electrochromic functional layer comprises, in sequence, a first transparent conductive layer, an insulating layer, a cathode electrochromic layer, an ion-conducting layer, an anode electrochromic layer, a lithium layer, and a second transparent conductive layer.

6. A method for preparing an electrochromic device as described in any one of claims 1 to 5, characterized in that, The electrochromic device is obtained by sequentially depositing an electrochromic functional layer and a silicon-based inorganic isolation layer on the surface of a first transparent substrate and then assembling it with a second substrate.

7. The preparation method according to claim 6, characterized in that, The silicon-based inorganic isolation layer is coated using a physical magnetron sputtering process.

8. The preparation method according to claim 7, characterized in that, The power density of the silicon-based inorganic isolation layer coating is 2~15 kW / m.

9. The preparation method according to claim 7 or 8, characterized in that, The deposition rate of the silicon-based inorganic isolation layer is 0.1~1.0 m / min.

10. The preparation method according to any one of claims 7 to 9, characterized in that, The deposition pressure of the silicon-based inorganic isolation layer is 0.1~1.0 Pa, the argon flow rate is 100~500 sccm, and the deposition temperature is 80~250℃.

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