A magnetic head

Abstract

This invention provides a magnetic head. The magnetic head includes a magnetoresistive material, which comprises a top electrode, an MTJ (magnetic transducer), and a bottom electrode stacked together. The bottom electrode is made of a high-magnetic-moment soft magnetic material and simultaneously serves as a seed layer and a first magnetic shielding layer for the antiferromagnetic structure of the magnetoresistive material. The top electrode is also made of a high-magnetic-moment soft magnetic material and simultaneously serves as a second magnetic shielding layer for the magnetoresistive material. This invention uses a high-magnetic-moment soft magnetic material layer to replace the seed layer, magnetic shielding layer, and electrode layer of the antiferromagnetic structure of the magnetic head magnetoresistive material, effectively shortening the distance between the shielding layers (magnetic shielding layers) of the magnetic head magnetoresistive material, thereby reducing the width of the magnetic head magnetoresistive material, allowing the magnetic head to read data through a narrower track and enabling the magnetic storage medium to store data at a higher density. Furthermore, the protective layer is made of wear-resistant, highly conductive ternary metal nitride, which not only prevents conductive debris from causing short circuits in the MTJ but also enhances the conductivity of the magnetoresistive electrodes and improves the quality of the magnetic head's sensing signal.

Description

Technical Field

[0001] This application relates to the design / manufacturing of magnetic heads and magnetic reading components, and in particular to a magnetic head that can read narrower magnetic recording tracks, has strong sensing signals, and is durable. Background Technology

[0002] In the field of modern information storage, magnetic storage technology still occupies a significant share of the data storage market due to its advantages such as high reliability, long lifespan, and low cost. With the rapid development of technologies such as big data and cloud computing, the market demand for storage capacity is experiencing explosive growth. How to further improve magnetic storage density has become a core issue that urgently needs to be addressed within the industry.

[0003] As a key component in magnetic storage systems, the performance of the magnetic head directly determines the recording density and read / write efficiency of the storage device. The magnetoresistive effect is the core principle behind signal reading by the magnetic head. Based on this principle, MR (magnetoresistive) heads, GMR (giant magnetoresistive) heads, and TMR (tunneling magnetoresistive) heads have been developed, continuously driving the improvement of magnetic storage density. Among them, MR heads, by adopting a read / write separation structure, change the signal sensing method of the read head from traditional current change detection to resistance change detection, significantly improving the sensitivity and accuracy of signal reading. This has increased the disk storage density from approximately 20 MB / sq inch with traditional magnetic induction heads to 2 TB / sq inch.

[0004] As storage density continues to increase, a series of technical bottlenecks are gradually emerging. In the design and manufacturing of magnetic heads, magnetoresistive width is a key parameter. Magnetoresistive width refers to the effective working width of the magnetoresistive element in the magnetic head, and it is closely related to the track width. In traditional magnetic head designs, to ensure the stability and accuracy of signal reading, the magnetoresistive width is usually set relatively wide. However, a wider magnetoresistive width brings several problems: Firstly, a wider magnetoresistive width prevents further reduction in track width, limiting the improvement of storage density. This is because track width directly affects the number of tracks that can be accommodated on the disk; the narrower the track width, the more tracks can be accommodated on the same area of ​​the disk, thus achieving higher storage density. Secondly, a wider magnetoresistive element is more susceptible to interference from external magnetic fields and its own thermal noise during operation, reducing the signal-to-noise ratio of signal reading, and consequently affecting the accuracy and reliability of data reading.

[0005] However, existing magnetic head structure designs limit further reduction in magnetoresistive width. In traditional magnetic head structures, the magnetoresistive element is highly integrated with other components, and the spatial layout between these components is relatively fixed. Reducing the magnetoresistive width without affecting the performance of other components presents numerous structural design challenges. For example... Figure 1As shown, the existing magnetic head magnetoresistive structure typically includes, from bottom to top, a substrate, a magnetic shielding layer, a bottom electrode, a seed layer, an antiferromagnetic layer, a pinning layer, a spacer layer, a reference layer, a barrier layer, a free layer, a protective layer, a top electrode, and the magnetic shielding layer. A lead-out layer is usually also provided outside the top and bottom electrodes. Figure 1 (Not shown in the image) This is to extract the sensing signal of the magnetoresistive head. Furthermore, in order to accurately read track data and eliminate the influence of interfering magnetic fields, it is also necessary to set magnetic shielding layers on the upper and lower end faces of the magnetoresistive head. Each of these layers has its own function and cannot be omitted, thus making it difficult to reduce the width of the magnetoresistive head. Summary of the Invention

[0006] In view of this, this application provides a magnetic head structure capable of reading narrower magnetic recording tracks, providing strong sensing signals, and exhibiting good durability. This magnetic head structure replaces the seed layer, magnetic shielding layer, and electrode layer of the antiferromagnetic structure of the magnetic head's magnetoresistive properties with a single layer of high-magnetic-moment soft magnetic material. This effectively shortens the magnetoresistive width of the magnetic head while maintaining its performance, thereby further increasing magnetic storage density. Furthermore, the magnetic head structure uses a wear-resistant, highly conductive ternary metal nitride to create a protective layer for the magnetoresistive layer. This not only prevents conductive debris from causing short circuits in the MTJ (Metal-to-Jet) but also enhances the conductivity of the magnetoresistive electrodes and improves the quality of the sensing signal when reading data from narrower tracks.

[0007] The magnetic head provided in this application includes a magnetoresistive head, which comprises a stacked top electrode, an MTJ (magnetic gate junction), and a bottom electrode. The bottom electrode is made of a high-magnetic-moment soft magnetic material, which also serves as the seed layer and the first magnetic shielding layer of the antiferromagnetic structure of the magnetoresistive head. Since the narrowest readable track of the magnetoresistive head depends on the two magnetic shielding layers (shielding layers on the two end faces) of the magnetoresistive head, the magnetic head provided in this application, by replacing the seed layer, magnetic shielding layer, and electrode layer of the antiferromagnetic structure of the magnetoresistive head with a layer of high-magnetic-moment soft magnetic material, the narrowest readable track of the magnetoresistive head depends on the distance between the bottom electrode and the top electrode or the upper gate magnetic shielding layer of the magnetoresistive head. Therefore, the magnetic head structure provided in this application effectively reduces the width of the magnetoresistive head compared to existing magnetic head structures, enabling the magnetic head to read data in a narrower track and allowing the magnetic storage medium to store data at a higher density.

[0008] Preferably, the top electrode is also made of a high magnetic moment soft magnetic material, which also serves as the second magnetic shielding layer of the magnetoresistive material.

[0009] Furthermore, the high magnetic moment soft magnetic material includes one or more of NiFe, CoFe, CoNiFe, and CoZrTa.

[0010] Furthermore, the magnetic head provided in this application further includes a first lead-out layer and a second lead-out layer disposed on the two end faces of the magnetoresistive resistor. The top electrode is stacked on the upper end face of the MTJ, and the first lead-out layer is disposed above the top electrode; the bottom electrode is stacked on the lower end face of the MTJ, and the second lead-out layer is disposed below the bottom electrode. A first protective layer is embedded between the top electrode and the first lead-out layer, and / or a second protective layer is embedded between the bottom electrode and the second lead-out layer. The first protective layer and the second protective layer are made of ternary nitride. The ternary nitride was prepared. A and B are conductive and wear-resistant materials, and are metallic elements. On the side facing the magnetic recording medium contact surface TBS, the first protective layer and the second protective layer protrude from their respective corresponding electrodes and lead-out layers, or are flush with the one of their respective corresponding electrodes and lead-out layers that is closest to the magnetic recording medium contact surface TBS.

[0011] Furthermore, the A element in the ternary nitride includes one of Hf, Ti, and Zr, and the B element includes one of Au, Ag, and Cr.

[0012] Considering that the magnetic field generated by the magnetic data in the magnetic recording medium is generally weakened after the track narrows, a ternary nitride with good conductivity and wear resistance is used. Fabricating a first protective layer and a second protective layer (replacing insulating materials such as alumina between the magnetoresistive electrode of the magnetic head and the corresponding lead-out layer) embedded between the electrode and the corresponding lead-out layer can not only block conductive debris generated during the relative movement of the magnetic recording medium and the magnetic head from the first and second protective layers, thus preventing MTJ short circuits; but also improve the conductivity of the magnetoresistive electrode and enhance the strength / signal-to-noise ratio of the read signal from the magnetic head.

[0013] In some embodiments, the top electrode layer does not directly contact the first lead-out layer, and the bottom electrode layer does not directly contact the second lead-out layer. This allows for the direct deposition of a ternary nitride layer on the substrate / liner. A first protective layer is formed, and then a high magnetic moment soft magnetic material layer is deposited on the first protective layer as a seed layer for the antiferromagnetic layer with magnetoresistance, a magnetic shielding layer, and an electrode. In another embodiment, at least one of the left and right ends of the top electrode layer directly contacts the first lead-out layer, and at least one of the left and right ends of the bottom electrode layer directly contacts the second lead-out layer.

[0014] Furthermore, since the top and bottom electrodes in the magnetic head magnetoresistive structure already function as magnetic shielding layers (blocking layers), the first and second lead-out layers of the magnetic head can be made of highly conductive metal materials to improve the electrical signal transmission capability.

[0015] The magnetic head provided in this application uses a high-magnetic-moment soft magnetic material layer to replace the seed layer, magnetic shielding layer, and electrode layer of the antiferromagnetic structure of the magnetic head magnetoresistive structure. This simplifies the structure of the magnetic head magnetoresistive structure, reduces its width, and allows the magnetic head to read data from narrower tracks, enabling the magnetic storage medium to store data at higher densities. To effectively read data from narrower tracks, a ternary nitride is used at specific locations on the magnetic head magnetoresistive structure. Creating a protective layer not only effectively improves the output amplitude and signal-to-noise ratio of the magnetoresistive sensing signal, but also effectively prevents conductive debris from "contaminating" the MTJ and causing a magnetoresistive short circuit, thereby improving the working stability and lifespan of the magnetic head. Attached Figure Description

[0016] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of a conventional magnetic head magnetoresistive system in one embodiment.

[0018] Figure 2a This is a schematic diagram of the structure of the magnetic reluctance in the magnetic head provided in this application in one embodiment.

[0019] Figure 2b The magnetic head provided in this application includes Figure 2a A partial schematic diagram of magnetic reluctance.

[0020] Explanation of reference numerals in the attached figures: 10-MTJ, 11-top electrode, 12-bottom electrode, 21-first lead-out layer, 22-second lead-out layer, 31-first protective layer, 32-second protective layer. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] In this application, the terms "comprising," "including," or any other variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. It should be noted that, without conflict, the embodiments and features described in the present invention can be combined with each other.

[0023] The technical solution provided by the present invention will be further described in detail below with reference to the accompanying drawings.

[0024] exist Figure 2a , Figure 2b In the illustrated embodiment, the magnetic head provided in this application includes a magnetoresistive layer, which comprises a top electrode, an MTJ, and a bottom electrode stacked together. From bottom to top, the magnetoresistive layer includes a substrate, a bottom electrode, an antiferromagnetic layer, a pinning layer, a spacer layer, a reference layer, a barrier layer, a free layer, a protective layer, and a top electrode. The antiferromagnetic layer, pinning layer, spacer layer, reference layer, barrier layer, free layer, and protective layer constitute the MTJ 10. A protective layer and a lead-out layer (such as...) are also disposed outside the top and bottom electrodes. Figure 2b (As shown).

[0025] The bottom electrode is made of a high-magnetic-moment soft magnetic material, which also serves as the seed layer and the first magnetic shielding layer of the antiferromagnetic structure of the magnetoresistive head. The top electrode is also made of a high-magnetic-moment soft magnetic material, which also serves as the second magnetic shielding layer of the magnetoresistive head. The narrowest track that the magnetoresistive head can read depends on the two magnetic shielding layers (shielding layers on the two end faces) of the magnetoresistive head. In this application, the magnetoresistive head uses a high-magnetic-moment soft magnetic material layer to replace the seed layer, magnetic shielding layer, and electrode layer of the antiferromagnetic structure. Therefore, the width of the narrowest track that the magnetoresistive head can read depends on the distance between the top and bottom electrodes. Because the seed layer, first magnetic shielding layer, and second magnetic shielding layer of the antiferromagnetic structure are eliminated in the physical structure, and only the electrode layer is retained, the magnetoresistive head structure provided in this application effectively reduces the width of the magnetoresistive head compared to existing magnetoresistive head structures, enabling the magnetoresistive head to read data in a narrower track and allowing for a higher data density in the magnetic storage medium.

[0026] Preferably, the high magnetic moment soft magnetic material includes one or more of NiFe, CoFe, CoNiFe, and CoZrTa.

[0027] Include Figure 2a The magnetic head with reluctance in the middle, such as Figure 2bAs shown, the magnetic head also includes a first lead-out layer disposed on both end faces of the magnetoresistive sensor. The top electrode 11 is stacked on the upper end face of the MTJ 10, and the first lead-out layer 21 is disposed above the top electrode 11; the bottom electrode layer 12 is stacked on the lower end face of the MTJ 10, and the second lead-out layer 22 is disposed below the bottom electrode 12. At least one of the left and right ends of the top electrode 11 directly contacts the first lead-out layer 21, and at least one of the left and right ends of the bottom electrode 12 directly contacts the second lead-out layer 22. The first gap between the top electrode 11 and the first lead-out layer 21 is filled with a ternary nitride. To form a first protective layer 31, a ternary nitride is filled in the second gap between the bottom electrode 12 and the second lead-out layer 22. To form a second protective layer 32. Ternary nitride It is a conductive and wear-resistant material, and A and B are metallic elements. The first lead-out layer 21 and the second lead-out layer 22 are usually made of highly conductive metallic materials.

[0028] Since the first protective layer 31 and / or the second protective layer 32 are made of conductive materials, their placement between the corresponding electrode and the lead-out layer effectively increases the contact area between the corresponding electrode and the lead-out layer, reduces the resistance between the magnetoresistive lead-out components, and improves the amplitude and signal-to-noise ratio of the sensing signal. Preferably, the ternary nitride... The A element in the formula includes one of Hf, Ti, and Zr, and the B element includes one of Au, Ag, and Cr.

[0029] Furthermore, on the side facing the magnetic recording medium contact surface TBS, the first protective layer 31 and the second protective layer 32 protrude from their respective corresponding electrodes and lead-out layers, or are flush with the one of their respective corresponding electrodes and lead-out layers closest to the magnetic recording medium contact surface TBS. During the relative movement of the magnetic recording medium and the magnetic head, since the first protective layer 31 and the second protective layer 32 are in close contact with the surface of the magnetic recording medium (e.g., the surface of the magnetic tape), conductive debris generated by the magnetic recording medium or other components of the magnetic head (e.g., the magnetic shielding layer) will be blocked outside the MTJ 10 by the first protective layer 31 and the second protective layer 32, thus preventing the MTJ 10 from short-circuiting.

[0030] Considering that the magnetic field generated by the data bits on the magnetic recording medium is generally weakened due to the narrowing of the magnetic track, a ternary nitride with good conductivity and wear resistance is used. A first protective layer and a second protective layer (replacing the insulating material such as alumina between the magnetoresistive electrode of the magnetic head and the corresponding lead-out layer) are fabricated and embedded between the electrode and the corresponding lead-out layer. This not only blocks conductive debris generated during the relative movement of the magnetic recording medium and the magnetic head from passing through the first and second protective layers, preventing short circuits in the MTJ, but also improves the conductivity of the magnetoresistive electrode, enhancing the strength / signal-to-noise ratio of the read signal from the magnetic head.

[0031] In another embodiment, the top electrode layer does not directly contact the first lead-out layer, and the bottom electrode layer does not directly contact the second lead-out layer. This allows for the direct deposition of a ternary nitride layer on the substrate / liner. The first protective layer is formed by depositing a high magnetic moment soft magnetic material layer directly on the first protective layer as a seed layer for the antiferromagnetic layer with magnetoresistance, a magnetic shielding layer, and an electrode. Similarly, the second protective layer can be formed by depositing a high magnetic moment soft magnetic material layer directly on the top electrode.

[0032] ternary nitrogen compounds The coefficient of friction between ternary nitrides and magnetic recording media is generally lower than that of binary nitrides (such as HfN) (“Microstructure, mechanical and tribological behaviors of hard-yet-tough Hf-Ag-N coating”, Ganggang Wang, et al., Journal of Materials Research and Technology 2023;22:2030-2042), and their electrical conductivity is generally higher than that of binary nitrides. Meanwhile, ternary nitrides… It retains its wear-resistant and hard properties. Therefore, ternary nitrides are used. It is reasonable and wise to maintain close and persistent contact / friction with the magnetic recording medium to protect the MTJ 10.

[0033] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A magnetic head, characterized in that, The magnetic head includes a magnetoresistive material, which includes a top electrode, an MTJ, and a bottom electrode stacked together. The bottom electrode is made of a high magnetic moment soft magnetic material and serves as both a seed layer and a first magnetic shielding layer for the antiferromagnetic structure of the magnetoresistive material.

2. The magnetic head as described in claim 1, characterized in that, The top electrode is also made of a high magnetic moment soft magnetic material, which also serves as the second magnetic shielding layer of the magnetoresistive material.

3. The magnetic head as described in claim 1 or 2, characterized in that, The high magnetic moment soft magnetic material includes one or more of NiFe, CoFe, CoNiFe, and CoZrTa.

4. The magnetic head as described in claim 1 or 2, characterized in that, The magnetic head further includes a first lead-out layer and a second lead-out layer disposed on the two end faces of the magnetoresistive resistor; the top electrode is stacked on the upper end face of the MTJ, with the first lead-out layer disposed above the top electrode; the bottom electrode is stacked on the lower end face of the MTJ, with the second lead-out layer disposed below the bottom electrode; a first protective layer is embedded between the top electrode and the first lead-out layer, and / or a second protective layer is embedded between the bottom electrode and the second lead-out layer; the first and second protective layers are made of ternary nitrides. The ternary nitride was prepared. A and B are conductive and wear-resistant materials, and are metallic elements. On the side facing the magnetic recording medium contact surface TBS, the first protective layer and the second protective layer protrude from their respective corresponding electrodes and lead-out layers, or are flush with the one of their respective corresponding electrodes and lead-out layers that is closest to the magnetic recording medium contact surface TBS.

5. The magnetic head as described in claim 4, characterized in that, The ternary nitride The A element in the formula includes one of Hf, Ti, and Zr, and the B element includes one of Au, Ag, and Cr.

6. The magnetic head as described in claim 4, characterized in that, The top electrode layer does not directly contact the first lead-out layer, and the bottom electrode layer does not directly contact the second lead-out layer.

7. The magnetic head as described in claim 4, characterized in that, At least one of the left and right ends of the top electrode layer directly contacts the first lead-out layer, and at least one of the left and right ends of the bottom electrode layer directly contacts the second lead-out layer.

8. The magnetic head as described in any one of claims 5-7, characterized in that, The first lead-out layer and the second lead-out layer are made of highly conductive metal materials.

Images