Ion implantation apparatus

Abstract

The present invention provides an ion implantation apparatus that achieves miniaturization of the device size. The ion implantation apparatus (1, 1a) comprises: an ion source (IS) for extracting a strip beam (R); a mass analysis electromagnet (5) including a pair of upper and lower saddle-shaped coils (5a, 5b) extending partly to the outside of the electromagnet, and having an incident surface (5d) for the strip beam (R) to be incident and an exit surface (5e) for the strip beam (R) to be emitted; an analysis slit (6) disposed downstream of the mass analysis electromagnet (5); and a processing chamber (14) disposed downstream of the analysis slit (6), wherein a transport channel (5p1, 5p2) for transporting the strip beam (R) outside the mass analysis electromagnet (5) is inclined relative to the incident surface (5d) and the exit surface (5e) of the mass analysis electromagnet (5).

Description

Technical Field

[0001] This invention relates to an ion implantation device. Background Technology

[0002] Patent Document 1 discloses an ion implantation apparatus utilizing a strip beam. In high-current ion implantation apparatuses, a strip beam is used to maximize the beam current. Compared to a point-like ion beam, the strip beam has a longer beam size, thus requiring larger optical elements positioned in the ion beam delivery channel. As a result, compared to ion implantation apparatuses utilizing point-like ion beams, there is a tendency for the apparatus size to be larger in strip beam-based ion implantation apparatuses. Existing technical documents

[0003] Patent Document 1: Japanese Patent Publication No. 2006-313750

[0004] In semiconductor factories, the area available for semiconductor manufacturing equipment is limited. Therefore, there is a need to reduce the size of ion implantation equipment. Summary of the Invention

[0005] Ion implantation devices have: Ion source, drawing out ribbon-like bundles; The quality analysis electromagnet includes a pair of upper and lower saddle-shaped coils extending to the outside of the electromagnet, and has an incident surface for the ribbon beam to enter and an exit surface for exiting the ribbon beam. The analysis slit is positioned downstream of the mass analysis electromagnet; and The processing chamber is located downstream of the analysis slit. The transport channel for transporting the ribbon outside the quality analysis electromagnet is connected at an angle relative to the incident surface and the exit surface.

[0006] By utilizing the edge magnetic field outside the mass analysis electromagnet to perform mass analysis on the strip bundle, the size of the mass analysis electromagnet can be miniaturized, thereby reducing the size of the ion implantation device. Attached Figure Description

[0007] Figure 1 This is a stereoscopic diagram representing an example of a banded bundle. Figure 2 This is a structural diagram showing an example of an ion implantation device. Figure 3 This is a three-dimensional diagram showing an example of a quality analysis electromagnet. Figure 4 It means Figure 3 The diagram shows a cross-section of the electromagnet used for mass analysis. Figure 5 This is a structural diagram representing an example of a corrector array. Figure 6 This is an illustrative diagram regarding the voltage applied to the corrector array. Figure 7 This is a three-dimensional diagram illustrating an example of an energy-separating electromagnet. Figure 8 This is a top view showing an example of a beam-shaping lens. Figure 9 This is a structural diagram showing another example of an ion implantation device. Detailed Implementation

[0008] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, in all the drawings used to describe the embodiments, the same reference numerals are used to label the same components in principle, and repeated descriptions are omitted. Additionally, the embodiments described below do not unduly limit the scope of the invention as described in the claims. Moreover, not all structures described in the embodiments are necessarily essential components of the present invention. The figures are schematic diagrams and do not necessarily strictly represent various dimensions.

[0009] like Figure 1 As shown, when the band R is cut in an XY plane perpendicular to the Z-axis, which is the direction of travel, it is approximately rectangular. In the approximately rectangular cut, the dimension in the Y-axis direction is longer than the dimension in the X-axis direction. In the following description, the Y-axis direction is sometimes referred to as the length direction of the band R, and the X-axis direction is referred to as the width direction of the band R.

[0010] Figure 2 This diagram illustrates a structural example of an ion implantation apparatus 1. The ion implantation apparatus 1 includes: an ion source IS, a first gate valve 4, a mass analysis electromagnet 5, an analysis slit 6, a first shield 7, a corrector array 8, a Faraday device 9, an acceleration / deceleration tube 10, a beam shaping lens 11, an energy separation electromagnet 12, a second shield 13, and a second gate valve 17. Furthermore, the ion implantation apparatus 1 may include a control device C. The XYZ axes shown are depicted relative to the strip beam R drawn from the ion source IS. The Z-axis direction, which is the travel direction of the strip beam R, changes as the strip beam R is transported. The same applies to the X-axis direction.

[0011] The ion source IS is, for example, a side-heated ion source or a Bernoulli ion source. The ion source IS includes a plasma chamber 2, a source magnet M, and an extraction electrode 3. In the plasma chamber 2, plasma is generated based on a feed gas or a gas supplied from a vaporizer.

[0012] The source magnet M has a pair of magnetic bodies extending along the Y-axis. The pair of magnetic bodies are arranged apart from the plasma chamber 2. Three coils are wound on each magnetic body. By independently controlling the direction and amount of current flowing in each coil, a magnetic field parallel to the extension direction of the magnetic bodies can be generated inside the plasma chamber 2.

[0013] Utilizing the potential difference between plasma chamber 2 and extraction electrode 3, a positively charged strip-shaped bundle R is extracted from the plasma generated in plasma chamber 2. For example, the length dimension of the strip-shaped bundle R is approximately 200 mm to approximately 400 mm.

[0014] The lead-out electrode 3 consists of two to four electrodes. Each electrode has an opening through which the strip-shaped bundle R passes. The opening can be multiple slits, a single slit, multiple holes, or a single hole.

[0015] The first gate valve 4 is located downstream of the extraction electrode 3. Before ion implantation begins, the first gate valve 4 is opened to deliver the ribbon bundle R downstream of the ion source IS. Conversely, during maintenance or replacement of the ion source IS, the first gate valve 4 is closed to separate the ion source IS from the delivery channel of the ribbon bundle R.

[0016] A mass analysis electromagnet 5 is disposed downstream of the first gate valve 4. The mass analysis electromagnet 5 has a vacuum container inside that serves as a transport channel for the ribbon bundle R. The transport channel in the mass analysis electromagnet 5 has a size of approximately 300 mm to approximately 500 mm along the length of the ribbon bundle R.

[0017] The mass analysis electromagnet 5 works in conjunction with the analysis slit 6 to select the desired ions from the various ions contained in the ribbon bundle R drawn from the ion source IS. Through mass analysis based on the mass analysis electromagnet 5, the ribbon bundle R containing the desired ions is transported to the downstream side of the analysis slit 6.

[0018] exist Figure 2 In the mass analysis of the mass analysis electromagnet 5 shown, for example, the radius of curvature is approximately 500 mm, and the deflection angle is approximately 120 degrees. The deflection angle referred to here is the angle by which the ribbon bundle R is deflected through the mass analysis. As will be described later, the mass analysis based on the mass analysis electromagnet 5 is performed using both the inside and outside of the electromagnet. If only the electromagnet portion of the mass analysis electromagnet 5 is considered, the deflection angle is approximately 95 degrees.

[0019] The acceleration / deceleration tube 10 has a first electrode 21, a second electrode 22, a third electrode 23, and a fourth electrode 24. The first electrode 21, the second electrode 22, the third electrode 23, and the fourth electrode 24 comprise a pair of electrodes facing each other across the strip bundle R in the width direction of the strip bundle R. The potential difference between the first electrode 21 and the fourth electrode 24 determines the energy of the strip bundle R. The potentials of the second electrode 22 and the third electrode 23 affect the length and width of the strip bundle R. Figure 2 In this process, the number of electrodes constituting the acceleration / deceleration tube 10 is four, but it can also be more or less.

[0020] The divergence of the band bundle R caused by the space charge effect is related to the energy of the band bundle R. The higher the energy, the more difficult it is for the band bundle R to diverge; the lower the energy, the easier it is for the band bundle R to diverge.

[0021] If the ribbon bundle R is decelerated and its energy decreases within the acceleration / deceleration tube 10, the ribbon bundle R diverges significantly. A portion of the diverging ribbon bundle R may sometimes collide with structures such as the first electrode 21, second electrode 22, third electrode 23, fourth electrode 24 of the acceleration / deceleration tube 10, or the inlet of the energy separation electromagnet 12. If such a collision occurs, the amount of beam current supplied to the processing chamber 14 decreases.

[0022] When the energy of the ribbon bundle R is low, in order to avoid the reduction of the bundle current caused by collisions, the shape of the ribbon bundle R can also be modified by adjusting the potential of the second electrode 22, the third electrode 23, or both.

[0023] For example, a bias power supply can be connected between the first electrode 21 and the second electrode 22 to change the potential of the second electrode 22. The polarity of the bias power supply can also be reversed according to the energy of the ribbon bundle R. Alternatively, separate power supplies can be provided for adjusting the potentials of the second electrode 22 and the third electrode 23, allowing for independent adjustment of the potentials of each electrode.

[0024] In the mass analysis electromagnet 5, from Figure 2 A magnetic field B1 is generated on the inside of the paper, facing the direction in front of the eye. Magnetic field B1 causes a Lorentz force F1 to act on the ribbon-like bundle R passing through the mass analyzer electromagnet 5. The Lorentz force F1 causes the ribbon-like bundle R to travel in a rightward direction (e.g., to the right). Figure 3 (X-axis direction) deflection.

[0025] exist Figure 2 In the diagram, solid lines represent the orbits of the ribbon-like bundle R containing the desired ion species, while dashed lines represent the orbits of the ribbon-like bundle R containing both light and heavy ion species. When passing through the mass analysis electromagnet 5, the lighter ion species deflects more than the desired ion species and collides with the inner wall of the mass analysis electromagnet 5. Conversely, the heavier ion species deflects less than the desired ion species and collides with the outer inner wall of the mass analysis electromagnet 5.

[0026] The analysis slit 6 is composed of a slit with an opening width in the width direction of the ribbon bundle R. The opening width can be fixed or variable. For example, the analysis slit 6 can be configured to have two plates separated on the right and left sides in the travel direction of the ribbon bundle R, and the opening width of the slit can be varied by rotating each plate about a rotation axis parallel to the length direction of the ribbon bundle R.

[0027] Figure 3 This is a perspective view of the mass analysis electromagnet 5. The mass analysis electromagnet 5 has an upper saddle-shaped coil 5a and a lower saddle-shaped coil 5b. The upper saddle-shaped coil 5a and the lower saddle-shaped coil 5b are a pair of saddle-shaped coils that generate a magnetic field B1 inside the yoke 5c of the mass analysis electromagnet 5. The yoke 5c includes a window-frame shaped yoke. The upper saddle-shaped coil 5a and the lower saddle-shaped coil 5b are bent along the transport channel of the strip bundle R inside the yoke 5c. Furthermore, in the inlet and outlet regions of the quality analysis electromagnet 5, the upper saddle-shaped coil 5a and the lower saddle-shaped coil 5b extend to the outside of the yoke 5c.

[0028] In the mass analysis electromagnet 5 with a pair of upper and lower saddle-shaped coils, the coils extend to the outside of the yoke 5c, thus generating a stronger edge magnetic field compared to other mass analysis electromagnets. Due to the influence of this edge magnetic field, a Lorentz force acts on the ribbon beam R in the rightward direction (e.g., the -X-axis direction) relative to the direction of travel, both before the ribbon beam R reaches the yoke 5c of the mass analysis electromagnet 5 and immediately after it exits the yoke 5c.

[0029] To avoid the influence of such peripheral magnetic fields, magnetic shielding is usually placed near the inlet and outlet of the mass analysis electromagnet 5. However, in Figure 2 , Figure 3 In the mass analysis electromagnet 5 shown, the aforementioned edge magnetic field is also used to perform mass analysis of the ribbon bundle R.

[0030] Figure 4 This is a schematic diagram depicting the cross-section of the mass analysis electromagnet 5 on the ZX plane. Figure 4 The illustrations of the yoke 5c and the vacuum container disposed inside the mass analysis electromagnet 5 are omitted. Furthermore, the shaded areas depicted at the ends of the upper saddle-shaped coil 5a and the lower saddle-shaped coil 5b represent portions extending to the outside of the yoke 5c of the mass analysis electromagnet 5.

[0031] The mass analysis electromagnet 5 deflects a ribbon-like bundle R containing the desired ions at a predetermined radius of curvature Ra. Figure 4 In the diagram, the thick lines represent the orbits of the ribbon-like bundle R containing the desired ions, deflected inside the mass analysis electromagnet 5. The mass analysis electromagnet 5 has an incident surface 5d for the ribbon-like beam R to enter and an exit surface 5e for the ribbon-like beam R to exit. A vacuum container serving as a transport channel for the ribbon-like beam R is disposed inside the mass analysis electromagnet 5. Furthermore, the incident surface 5d and the exit surface 5e include the ends of the vacuum container disposed inside the yoke portion 5c.

[0032] The first transport channel 5p1 is connected at an angle relative to the incident surface 5d. Furthermore, the second transport channel 5p2 is connected at an angle relative to the exit surface 5e. These transport channels 5p1, 5p2, and the vacuum container of the mass analysis electromagnet 5 can be assembled after being manufactured separately, or they can be prepared as a single integrated structure from the outset.

[0033] The directions parallel to each of the conveying channels 5p1 and 5p2 are designated as the conveying directions P1 and P2 of the ribbon bundle R. In the first conveying channel 5p1, the conveying direction P1 of the ribbon bundle R intersects the tangent T on the incident surface 5d relative to the imaginary circle VC with respect to the radius of curvature Ra, and points outward from the imaginary circle VC. Furthermore, in the second conveying channel 5p2, the conveying direction P2 of the ribbon bundle R intersects the tangent T on the ejection surface 5e relative to the imaginary circle VC, and points inward from the imaginary circle VC.

[0034] The direction towards the outside of the aforementioned imaginary circle VC refers to the direction of the conveying direction P1 away from the imaginary circle VC, with the tangent T drawn on the incident plane 5d to the imaginary circle VC as the reference. Furthermore, "towards the inner side of the imaginary circle VC" refers to the direction of the conveying direction P2 toward the imaginary circle VC, with the tangent T drawn on the injection surface 5e to the imaginary circle VC as a reference.

[0035] Figure 4 The first conveying channel 5p1 and the second conveying channel 5p2 shown are straight conveying channels, but either or both of the conveying channels can be curved. In this case, the conveying direction of the strip bundle R in each of the above conveying channels is also curved.

[0036] By utilizing the edge magnetic field in the first transport channel 5p1 and the second transport channel 5p2 to deflect the strip bundle R, even a small mass analysis electromagnet can perform mass analysis with a large deflection angle. As a result, the size of the mass analysis electromagnet can be miniaturized compared to conventional mass analysis electromagnets that do not utilize the edge magnetic field.

[0037] Mass analysis electromagnets are essential optical components in ion implantation devices for implanting desired ions, and they occupy a relatively large size within the overall device. Miniaturizing such optical components is effective in reducing the overall size of the device. Furthermore, miniaturization of mass analysis electromagnets can also be expected to reduce the power consumption of the ion implantation device.

[0038] Figure 5 This is a structural diagram showing an example of a corrector array 8. Figure 6 These are explanatory diagrams regarding the voltage applied to the corrector array 8. Based on these diagrams, the structure and function of the corrector array 8 will be explained.

[0039] like Figure 5 As shown, the corrector array 8 has a pair of electrodes 8a-8f arranged across the strip bundle R in the width direction of the strip bundle R. like Figure 6 As shown, the same voltage is applied to paired electrodes 8a-8f. The voltage applied to each electrode pair 8a-8f can be in the relationship Va=Vb=Vc=Vd=Ve=Vf, but all voltages can also be set to different values. Alternatively, the same voltage can be applied to a portion of the electrode pairs, while different voltages can be applied to the remaining electrode pairs.

[0040] By locally varying the voltages applied to a pair of electrodes 8a-8f arranged along the length of the strip bundle R, a local electric field is generated. This local electric field causes the strip bundle R to deflect locally along its length. This local deflection is then used to adjust the current density distribution along the length of the strip bundle R.

[0041] like Figure 5 As shown, the surfaces of each electrode pair 8a-8f that face the ribbon bundle R are rounded, without any corners. In the case of corners, the ends of the ribbon bundle R advancing near the electrode pairs 8a-8f can sometimes cause sharp, localized aggregation effects. If this localized aggregation effect occurs, the bundle shape of the ribbon bundle R is deformed; therefore, a rounded shape is used on the facing surfaces.

[0042] Figure 2 The first shield 7 shown is positioned between the corrector array 8 and the analysis slit 6. If the ribbon beam R irradiates the corrector array 8, the corrector array 8 is consumed by sputtering. By covering the upstream side of the corrector array 8 with the first shield 7, the consumption of the corrector array 8 caused by the sputtering can be prevented.

[0043] Alternatively, an analysis slit 6 can be configured near the corrector array 8 to replace the first shield 7, preventing sputtering of the corrector array 8. In this case, the first shield 7 can be omitted from the delivery channel of the strip bundle R. In addition, the first shielding element 7 can be made of strong magnetic materials such as iron, nickel, and cobalt, and function as a magnetic shielding element for the edge magnetic field of the mass analysis electromagnet 5.

[0044] Faraday device 9 is located downstream of corrector array 8. Structurally, Faraday device 9 is configured such that a single Faraday cup, serving as a measuring unit, is mounted at the front end of a drive shaft, and the Faraday cup portion is capable of entering and exiting the transport channel of the strip bundle R. When measuring the bundle current, the drive shaft of Faraday device 9 moves axially upwards, causing the Faraday cup portion to enter the transport channel of the strip bundle R.

[0045] The Faraday device 9 has a suppression electrode for containing secondary electrons generated within a single Faraday cup. However, a suppression electrode is not necessarily required, and a corrector array 8 can be used instead.

[0046] When using the corrector array 8 as a suppression electrode, the potential of the corrector array 8 is set to the potential of the original suppression electrode when measuring the beam current of the strip bundle R. At this time, the potential of the corrector array 8 becomes negative relative to the Faraday cup.

[0047] When the corrector array 8 also functions as a suppression electrode, the potential of the corrector array 8 can be consistently set to a negative potential regardless of the beam current measurement based on the Faraday device 9. Furthermore, a circuit for switching the potential setting can be provided to switch the potential of the corrector array 8 depending on whether beam current measurement based on the Faraday device 9 is performed or not. The potential of the corrector array 8 referred to here is the overall potential of the corrector array 8, not the potentials of the individual electrode pairs 8a-8f constituting the corrector array 8.

[0048] Energy is imparted to the ribbon bundle R based on the voltage at which the bundle is drawn out by the lead-in electrode 3. An acceleration / deceleration tube 10 is disposed downstream of the Faraday device 9. The acceleration / deceleration tube 10 converts the energy of the ribbon beam R into the desired energy required for ion implantation.

[0049] The acceleration / deceleration tube 10 has four independent electrodes. Each electrode has a space through which the ribbon beam R passes. The potential of the downstream electrode is ground potential. The potential difference between the upstream and downstream electrodes determines the energy of the ribbon beam R after passing through the acceleration / deceleration tube 10. Energy conversion in the acceleration / deceleration tube 10 is carried out in any of the following modes: acceleration, deceleration, or drift, depending on the voltage applied to each electrode constituting the acceleration / deceleration tube 10.

[0050] In acceleration mode, the energy of the band beam R increases. In deceleration mode, the energy of the band beam R decreases. In drift mode, the energy of the band beam R remains unchanged. By incorporating such an acceleration / deceleration tube 10, it is possible to handle a wide range of energies, from hundreds of eV to hundreds of keV, in the form of a strip beam R.

[0051] An energy-separating electromagnet 12 is positioned downstream of the acceleration / deceleration tube 10. In the energy-separating electromagnet 12, the deflection of a particle changes depending on its charge. This allows neutral particles, which are unwanted energy components, to be separated from the ribbon-like bundle R.

[0052] When the ribbon-like beam R collides with the residual gas trapped inside the acceleration / deceleration tube 10, a portion of it undergoes charge conversion, generating neutral particles. Figure 2 The dashed lines inside the energy-separating electromagnet 12 represent the orbits of neutral particles. The deflection angle of the energy-separating electromagnet 12 is approximately 20 degrees, and the bending radius is approximately 1000 mm.

[0053] Figure 7 This is a 3D diagram of the energy separation electromagnet 12. Figure 8 This is a top view showing an example of a beam-shaping lens 11. The energy-separating electromagnet 12 includes an upper saddle-shaped coil 12a and a lower saddle-shaped coil 12b. By allowing current to flow through each of the saddle-shaped coils 12a and 12b, a magnetic field B2 is generated from the upper saddle-shaped coil 12a to the lower saddle-shaped coil 12b. (The last sentence appears to be incomplete and possibly refers to a different topic.) Figure 2 As shown, the Lorentz force F2 generated by the magnetic field B2 acts on the ribbon-like bundle R, and the direction of travel of the ribbon-like bundle R is to the left (e.g., Figure 7 (X-axis direction) deflection.

[0054] In the mass analysis electromagnet 5 and the energy separation electromagnet 12, the deflection directions of the ribbon bundle R are opposite. Figure 2 In the structure of the ion implantation device 1 shown, the deflection directions of the mass analysis electromagnet 5 and the energy separation electromagnet 12 are opposite, and the ribbon bundle R in the energy separation electromagnet 12 bends and recovers.

[0055] The energy-separating electromagnet 12 has a beam-shaping lens 11 for converging, diverging, and parallelizing the ribbon-like bundle R. The beam-shaping lens 11 comprises two lenses: a first beam-shaping lens 11a and a second beam-shaping lens 11b. However, the structure with two lenses is one example, and it is also possible to have a structure with either the first beam-shaping lens 11a or the second beam-shaping lens 11b.

[0056] The first shaping lens 11a and the second shaping lens 11b are disposed outside the vacuum container that constitutes the internal channel of the energy-separating electromagnet 12. The first shaping lens 11a may also include multiple coils. For example, it may include two upper coils 11a1 and two lower coils 11a2 disposed in the width direction of the strip bundle R, separated by the strip bundle R. The second shaping lens 11b is also configured in the same way as the first shaping lens 11a.

[0057] exist Figure 8In this process, by adjusting the direction of the current flowing in a pair of upper coils 11a1 and a pair of lower coils 11a2, magnetic fields in opposite directions are generated, thereby enabling the ribbon bundle R to converge (Fa1) or diverge (Fa2) along its length.

[0058] For example, after the strip bundle R is diverged by the first shaping lens 11a, it is converged by the second shaping lens 11b, thereby enabling the strip bundle R, shaped into a longer parallel bundle, to be transported to the processing chamber 14. Furthermore, after the strip bundle R is converged by the first shaping lens 11a, it is diverged by the second shaping lens 11b, thereby enabling the strip bundle R, which has been shaped into a parallel bundle with a shorter length, to be transported to the processing chamber 14.

[0059] However, the method of using the beam shaping lens 11 is not limited to the method described above. For example, the deflection amounts of the first beam shaping lens 11a and the second beam shaping lens 11b may be different, thus imparting an angular component in the length direction of the strip bundle R.

[0060] A processing chamber 14 is disposed downstream of the energy-separating electromagnet 12. A neutralizer (not shown) is disposed near or inside the processing chamber 14. If the edge magnetic field of the energy-separating electromagnet 12 acts on the neutralizing electrons emitted from the neutralizer, there is concern that the neutralization effect of the ribbon beam R generated by the neutralizing electrons may be reduced. Furthermore, such an edge magnetic field may deflect the trajectory of the ribbon beam R after passing through the energy-separating electromagnet 12, raising concerns that the beam irradiation angle during ion implantation may become an undesirable angle.

[0061] As a countermeasure to these problems, a second shielding element 13 is disposed on the downstream side of the energy separating electromagnet 12. The second shielding element 13 is made of a strongly magnetic material such as iron, nickel, or cobalt. By providing the second shielding element 13, the edge magnetic field on the downstream side of the energy separating electromagnet 12 is shielded, thus eliminating the aforementioned concerns.

[0062] To eliminate the adverse effects caused by the edge magnetic field on the upstream side of the energy separating electromagnet 12, an additional magnetic shield can be disposed immediately upstream of the energy separating electromagnet 12. By using the first shield 7 as a magnetic shield and providing the additional magnetic shield described herein, the influence of the edge magnetic field between the two magnetic shields can be eliminated.

[0063] On the other hand, Figure 2 In the ion implantation device 1 shown, since the direction of the magnetic field B1 of the mass analysis electromagnet 5 and the direction of the magnetic field B2 of the energy separation electromagnet 12 are opposite, the edge magnetic field of the mass analysis electromagnet 5 and the edge magnetic field of the energy separation electromagnet 12 can be canceled out. The cancellation of the edge magnetic fields occurs between the mass analysis electromagnet 5 and the energy separation electromagnet 12. However, depending on the location, the edge magnetic fields cannot be completely eliminated from each other, leaving residual effects.

[0064] In the acceleration / deceleration tube 10, the ribbon beam R moves in a straight line while being accelerated or decelerated. Therefore, it is undesirable for the ribbon beam R to be significantly deflected inside the acceleration / deceleration tube 10 due to the edge magnetic field. Preferably, the length of the conveying channel, the location of the acceleration / deceleration tube 10, and the magnetic flux density in the mass analysis electromagnet 5 and the energy separation electromagnet 12 are studied and designed to completely cancel out the edge magnetic field in the acceleration / deceleration tube 10, or to keep the influence of the edge magnetic field within an acceptable range. Thus, the acceleration and deceleration of the strip beam R can be carried out normally without magnetic shielding.

[0065] Figure 9 The ion implantation device 1a shown does not have a first shielding element 7 between the mass analysis electromagnet 5 and the energy separation electromagnet 12. According to this structure, with... Figure 2 Compared to the ion implantation device 1, the length of the beamline, which serves as the delivery channel for the ribbon-like beam R, can be shortened. On the other hand, other optical elements can be configured instead of shortening the beamline length.

[0066] The second gate valve 17 is located at the entrance of the processing chamber 14. When the processing chamber 14 is being maintained or cleaned, or when the supply of the ribbon bundle R to the processing chamber 14 is stopped, the second gate valve 17 spatially separates the processing chamber 14 from the bundle line.

[0067] A wafer 15 supported by a stage is disposed within the processing chamber 14. The length dimension of the strip beam R is longer than the diameter dimension of the wafer 15. The width dimension of the strip beam R is shorter than the diameter dimension of the wafer 15. During ion implantation of the wafer 15, the entire surface of the wafer 15 is irradiated by the strip beam R by reciprocating the wafer 15 in the width direction of the strip beam R.

[0068] An analyzer 16 is installed in the processing chamber 14. The analyzer 16 has a beam current measuring device with multiple Faraday cups arranged along the long side of the strip bundle R.

[0069] The measurement results of the beam current density distribution of the analyzer 16 are sent to the corrector array 8 to adjust the applied voltage in the electrode pairs 8a-8f constituting the corrector array 8. Furthermore, the measurement results of the beam current of the Faraday device 9 are used to adjust various parameters of the ion source IS and / or the mass analysis electromagnet 5.

[0070] The above feedback control is by Figure 2 , Figure 9The control device C performs these functions. The control device includes a processor and memory. The processor can be a microprocessor, a central processing unit (CPU), a microcontroller, hardware control logic, or any combination thereof. Multiple processors can also be provided. The control device C is hardware control logic that performs functions such as setting the voltage in the ion source IS, the corrector array 8, the acceleration / deceleration tube 10, the mass analysis electromagnet 5, the energy separation electromagnet 12, and the beam shaping lens 11; opening and closing the first gate valve 4 or the second gate valve 17; and moving the wafer 15 for ion implantation. While one control device C performs these functions, multiple parts of the processor in the control device C can perform different functions, or multiple control devices C can be provided, each performing different functions.

[0071] In the above embodiments, the Faraday device 9 is a movable structure in which the Faraday cup partially enters the delivery channel of the ribbon bundle R, but it can also be a fixed structure. In the fixed case, the Faraday cup is arranged in the delivery channel of the ribbon bundle R at a position where the upper or lower end of the ribbon bundle R, which is not used in ion implantation, is always irradiated.

[0072] The implementation methods are not limited to the various implementation methods described above, and it can be understood that various other changes and modifications may be made therein without departing from the spirit and scope of the appended claims. Explanation of reference numerals in the attached figures

[0073] 1.1a Ion implantation device 5. Quality Analysis Electromagnet 5d incident surface 5e injection surface 5p1 and 5p2 conveyor channels 6. Analysis of the slit 14 Processing Room R band IS ion source.

Claims

1. An ion implantation device, wherein, have: Ion source, drawing out ribbon-like bundles; The quality analysis electromagnet includes a pair of upper and lower saddle-shaped coils extending to the outside of the electromagnet, and has an incident surface for the ribbon beam to enter and an exit surface for exiting the ribbon beam. The analysis slit is positioned downstream of the mass analysis electromagnet; as well as The processing chamber is located downstream of the analysis slit. The transport channel for transporting the ribbon outside the quality analysis electromagnet is connected at an angle relative to the incident surface and the exit surface.

2. The ion implantation apparatus according to claim 1, wherein, The ion implantation apparatus includes: An acceleration / deceleration tube, disposed between the analysis slit and the processing chamber, converts the energy of the ribbon bundle; as well as An energy separation electromagnet, positioned between the acceleration / deceleration tube and the processing chamber, separates particles containing unwanted energy components from the ribbon bundle. The edge magnetic field of the mass analysis electromagnet cancels out the edge magnetic field of the energy separation electromagnet.

3. The ion implantation apparatus according to claim 1, wherein, The ion implantation apparatus includes: An acceleration / deceleration tube, disposed between the analysis slit and the processing chamber, converts the energy of the ribbon bundle; as well as An energy separation electromagnet, positioned between the acceleration / deceleration tube and the processing chamber, separates particles containing unwanted energy components from the ribbon bundle. The direction of the Lorentz force acting on the ribbon is opposite in the mass analysis electromagnet and the energy separation electromagnet.

4. The ion implantation apparatus according to claim 1, wherein, The ion implantation apparatus includes: An acceleration / deceleration tube, disposed between the analysis slit and the processing chamber, converts the energy of the ribbon bundle; as well as A corrector array, configured between the analysis slit and the acceleration / deceleration tube, adjusts the beam current density distribution along the length of the strip bundle.

5. The ion implantation apparatus according to claim 4, wherein, The ion implantation device includes a Faraday device disposed between the corrector array and the acceleration / deceleration tube, which measures the beam current of the strip beam. When beam current measurement is performed by the Faraday device, the potential of the corrector array is lower than the potential of the measuring section of the Faraday device.

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