Semiconductor device

Abstract

This disclosure provides a semiconductor device, relating to the field of semiconductor technology. The semiconductor device includes: a dielectric cylinder for enclosing a plasma generation space; a Faraday cage sleeved outside the dielectric cylinder and having multiple axial gaps extending along the axial direction of the dielectric cylinder; a coil sleeved outside the Faraday cage for exciting process gas entering the plasma generation space to generate plasma; a cavity located below the dielectric cylinder and having a workpiece processing space for processing workpieces; and a cooling device located on the side of the cavity facing the dielectric cylinder. The cooling device includes: a gas distributor for providing cooling gas; multiple air blowing pipes spaced apart along the outer periphery of the Faraday cage; and at least one air blowing pipe having an outlet corresponding to an axial gap, such that the cooling gas provided by the gas distributor can be blown towards the dielectric cylinder through the axial gap.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor equipment technology, and more particularly to a semiconductor device. Background Technology

[0002] Inductively Coupled Plasma (ICP) etching is the result of a combination of physical and chemical processes. Under low vacuum and pressure, the radio frequency output generated by the ICP RF power supply is sent to the coupling coil. A process gas mixed in a certain proportion is coupled and glow discharges to generate high-density plasma. These plasmas bombard the substrate surface, breaking the chemical bonds of the substrate material. The plasma reacts with the etching gas to generate volatile substances, which are then detached from the substrate in gaseous form and extracted from the vacuum tube. ICP etching technology has advantages such as fast etching rate, high selectivity, high anisotropy, low etching damage, good uniformity over a large area, high controllability of the etching profile, and smooth and flat etched surface. Summary of the Invention

[0003] This disclosure provides a semiconductor device.

[0004] As one aspect of this disclosure, an embodiment provides a semiconductor device, comprising: a dielectric cylinder for enclosing a plasma generation space; a Faraday cage sleeved outside the dielectric cylinder and having a plurality of axial gaps extending along the axial direction of the dielectric cylinder; a coil sleeved outside the Faraday cage for exciting process gas entering the plasma generation space to generate plasma; a cavity located below the dielectric cylinder and having a workpiece processing space for processing a workpiece; and a cooling device located on the side of the cavity facing the dielectric cylinder; wherein the cooling device comprises: a gas distributor for providing cooling gas; a plurality of blowing pipes spaced apart along the outer periphery of the Faraday cage; and at least one outlet of the blowing pipe corresponding to the axial gap, such that the cooling gas provided by the gas distributor can be blown toward the dielectric cylinder through the axial gap.

[0005] In one embodiment, the number of air-blowing pipes is equal to the number of axial gaps.

[0006] In one embodiment, the gas distributor has multiple components; the gas distributor is arc-shaped; and the gas distributor is connected to at least two of the blowing pipes.

[0007] In one embodiment, the plurality of air-blowing pipes connected to the gas distributor are symmetrically distributed about a preset vertical plane; the preset vertical plane passes through the center of the gas distributor and through the central axis of the medium cylinder.

[0008] In one embodiment, at least one of the blowing pipes gradually tilts toward the central axis of the medium cylinder along a direction from the workpiece processing space toward the plasma generation space.

[0009] In one embodiment, the air tube is made of a non-metallic insulating material.

[0010] In one embodiment, the end of the axial clearance facing the cavity corresponds to the air outlet of the air blowing pipe.

[0011] In one embodiment, the axial clearance of the Faraday cage includes: a first sub-gap, a second sub-gap, and a third sub-gap arranged sequentially along the direction from the plasma generation space toward the workpiece processing space; in the circumferential direction of the Faraday cage, the size of the first sub-gap is larger than the size of the second sub-gap, and the size of the third sub-gap is larger than the size of the second sub-gap; along the axial direction of the Faraday cage, the size of the second sub-gap is larger than the size of the first sub-gap, and the size of the second sub-gap is larger than the size of the third sub-gap; the air outlet of the blowing pipe corresponds to the portion of the second sub-gap near the third sub-gap.

[0012] In one embodiment, the air blowing tube is detachably connected to the gas distributor.

[0013] In one embodiment, the gas distributor is provided with a first interface; the end of the air blowing pipe opposite to its outlet is inserted into the first interface and threadedly connected; a first seal is provided between the end of the air blowing pipe opposite to its outlet and the first interface.

[0014] In one embodiment, the inner diameter of the blowing tube is smaller than the inner diameter of the channel in the gas distributor.

[0015] This embodiment achieves efficient and uniform cooling of the medium cylinder, reducing or even avoiding the risk of localized high temperatures and cracking caused by thermal stress concentration.

[0016] The above overview is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of this disclosure will become readily apparent from the accompanying drawings and the following detailed description. Attached Figure Description

[0017] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments disclosed in this disclosure and should not be construed as limiting the scope of this disclosure.

[0018] Figure 1 This diagram illustrates the structure of a semiconductor device according to an embodiment of the present disclosure; Figure 2 A schematic diagram of the structure of a cooling device according to an embodiment of the present disclosure is shown; Figure 3 An exploded view of a semiconductor device according to an embodiment of the present disclosure is shown.

[0019] Explanation of reference numerals in the attached drawings: 10-medium cylinder; 20-Faraday cage; 21-axial clearance; 211-first sub-clearance; 212-second sub-clearance; 213-third sub-clearance; 30-coil; 40-cavity; 50-cooling device; 51-gas distributor; 52-air blowing pipe. Detailed Implementation

[0020] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this disclosure. Therefore, the drawings and description are to be considered exemplary in nature and not restrictive.

[0021] In ICP etching equipment, the dielectric tube, as the core component for plasma generation and confinement, is often made of high-purity alumina, silicon nitride and other high-temperature resistant insulating materials. However, in scenarios using high-power coupling coils, the dielectric tube is very prone to cracking due to local high temperature.

[0022] This embodiment provides a semiconductor device. By setting up a cooling device, a gas distributor in the cooling device is used to guide cooling gas into a blowing pipe. The blowing pipe is used to blow the cooling gas toward the dielectric cylinder. The cooling gas exchanges heat with the dielectric cylinder and carries away the heat of the dielectric cylinder, thereby achieving cooling of the dielectric cylinder and improving or even avoiding the problem of the dielectric cylinder cracking due to local high temperature.

[0023] The structure, function, and implementation process of the semiconductor device in this embodiment will be illustrated below with reference to the accompanying drawings.

[0024] Please refer to Figures 1 to 3 This embodiment provides a semiconductor device, including: a dielectric cylinder 10 for forming a plasma generation space; a Faraday cage 20, sleeved outside the dielectric cylinder 10, and having a plurality of axial gaps 21 extending along the axial direction of the dielectric cylinder 10; a coil 30, sleeved outside the Faraday cage 20, for exciting process gas entering the plasma generation space to generate plasma; a cavity 40 located below the dielectric cylinder 10, and having a workpiece processing space for processing workpieces; and a cooling device 50 located on the side of the cavity 40 facing the dielectric cylinder 10.

[0025] The cooling device 50 includes: a gas distributor 51 for supplying cooling gas to the air blowing pipe 52; a plurality of air blowing pipes 52, which are spaced apart along the outer periphery of the Faraday cage 20; and at least one air blowing pipe 52 with its outlet corresponding to the axial gap 21, so that the cooling gas supplied by the gas distributor 51 can be blown to the medium cylinder 10 through the axial gap 21.

[0026] The dielectric cylinder 10 is typically made of a high-temperature resistant and insulating material, such as quartz or ceramic. It is cylindrical in shape and encloses a plasma generation space to contain the process gas and generate plasma within it. The dielectric cylinder 10 is usually placed vertically, with its axial direction aligned with the height of the equipment.

[0027] A Faraday cage 20, made of a conductive material such as stainless steel or aluminum, is fitted over the dielectric cylinder 10. It is a cylindrical cover with multiple axially extending gaps 21. These axial gaps 21 are evenly distributed along the circumference of the dielectric cylinder 10 and extend axially from one end of the Faraday cage 20 to the other. The primary function of the Faraday cage 20 is to shield against electromagnetic interference, while its axial gaps 21 provide channels for the flow of cooling gas. A certain gap is maintained between the Faraday cage 20 and the dielectric cylinder 10 to avoid direct contact.

[0028] The coil 30 is mounted outside the Faraday cage 20 and is typically made of conductive materials such as copper or copper alloys wound into a spiral structure. The coil 30 is connected to an external radio frequency power supply. When current is applied, it generates an alternating electromagnetic field, which excites the process gas entering the plasma generation space to ionize and generate plasma.

[0029] The cavity 40 is located below the dielectric cylinder 10, and its interior encloses a workpiece processing space for placing semiconductor workpieces (such as wafers) and performing etching, deposition, and other processes. The cavity 40 is connected to the dielectric cylinder 10 via a flange or a sealing structure. The dielectric cylinder 10, Faraday cage 20, coil 30, and cavity 40 are kept coaxial.

[0030] The cooling device 50 is located on the side of the cavity 40 facing the medium cylinder 10, specifically near the bottom of the medium cylinder 10. The cooling device 50 includes a gas distributor 51 and multiple gas blowing pipes 52. The gas distributor 51 can be made of stainless steel or corrosion-resistant metal tubing and is connected to an external cooling gas source via cooling lines to supply cooling gas to the gas blowing pipes 52. The cooling gas can be a dry, compressed gas at room temperature, specifically helium, argon, or nitrogen.

[0031] Multiple air-blowing pipes 52 can be evenly wrapped around the outside of the Faraday cage 20. The air-blowing pipes 52 are made of heat-resistant material, and their outlets face the axial gap 21 of the Faraday cage 20. The outlet of at least one air-blowing pipe 52 corresponds precisely to the axial gap 21, so that the cooling gas provided by the gas distributor 51 can be directly blown to the outer wall of the medium cylinder 10 through the axial gap 21. In this way, the cooling gas can remove the high-temperature heat load generated in the medium cylinder 10 during the plasma generation process.

[0032] This embodiment achieves efficient and uniform cooling of the dielectric cylinder 10, reducing or even avoiding the risk of localized high temperatures and cracking caused by thermal stress concentration, thereby improving the reliability and process stability of the semiconductor equipment. Furthermore, the cooling gas can also help remove deposits from the surface of the dielectric cylinder 10, extending the equipment maintenance cycle.

[0033] In some embodiments, the number of air pipes 52 is equal to the number of axial gaps 21. That is, each axial gap 21 is provided with an independent air pipe 52 corresponding to it. This one-to-one correspondence ensures that the airflow outlet of the cooling device 50 matches the air permeability channel of the Faraday cage 20 in the circumferential direction.

[0034] A gas distributor 51 is used to synchronously deliver cooling gas to multiple connected air blowing pipes 52. The air blowing pipes 52 are evenly spaced along the outer circumference of the Faraday cage 20, with their outlets precisely aligned with their corresponding axial gaps 21. The air blowing pipes 52 form a concentrated airflow of cooling gas, which passes unobstructed through its corresponding axial gap 21 and directly blows onto the outer wall surface of the medium cylinder 10. Because the number of gaps is equal to the number of air blowing pipes 52, every axial strip-shaped area on the entire circumference of the outer wall of the medium cylinder 10 can directly receive the impact cooling of the cooling airflow.

[0035] This embodiment achieves uniform air cooling of the medium cylinder 10 in the circumference, which helps to eliminate local high-temperature hot spots that may be generated due to incomplete cooling coverage, thereby homogenizing the temperature field of the medium cylinder 10 and reducing the risk of deformation or cracking caused by uneven circumferential thermal stress.

[0036] In some embodiments, the gas distributor 51 has multiple components; the gas distributor 51 is arc-shaped to conform to the outer periphery of the Faradaic cage 20; the gas distributor 51 is connected to at least two air blowing pipes 52.

[0037] Multiple arc-shaped gas distributors 51 are distributed along the circumference of the Faraday cage 20, located on the side of the cavity 40 facing the medium cylinder 10, and fixed to the wall of the cavity 40 or a dedicated support frame, thereby achieving a compact layout within a limited space. For example, the gas distributors 51 are fastened to the cavity 40 by multiple screws.

[0038] Each arc-shaped gas distributor 51 is connected to at least two air blowing pipes 52. The air blowing pipes 52 are connected to the arc-shaped gas distributor 51 by welding or quick-connect fittings to ensure gas sealing. Multiple arc-shaped gas distributors 51 can be connected in parallel to each other and connected to the main gas supply line of an external cooling gas source to achieve synchronous gas supply.

[0039] Each arc-shaped gas distributor 51 acts as an independent gas distribution unit, supplying cooling gas to multiple blowing pipes 52 connected to it. The outlet of the blowing pipe 52 corresponds to the axial gap 21 of the Faraday cage 20, allowing the cooling gas to be blown through the gap towards the outer wall of the medium cylinder 10. The number of arc-shaped gas distributors 51 can be set according to the equipment size and cooling requirements, for example, two or more, to cover the entire outer peripheral area of ​​the Faraday cage 20.

[0040] The arrangement of multiple arc-shaped gas distributors 51 enables zoned cooling control. Each gas distributor 51 can independently adjust the gas flow rate or pressure to adapt to the heat load differences in different areas of the medium cylinder 10. In addition, this arrangement also helps to ensure the consistency of the gas pressure blown out by the connected air blowing pipes 52. Each pipeline connects to multiple air blowing pipes 52, which improves the gas distribution efficiency, ensures that cooling airflow is delivered to the medium cylinder 10 from multiple points, and enhances the uniformity of cooling coverage.

[0041] In some embodiments, the plurality of air blowing pipes 52 connected to the gas distributor 51 are symmetrically distributed about a preset vertical plane; the preset vertical plane passes through the center of the gas distributor 51 and through the central axis of the medium cylinder 10. The symmetrical layout achieves a uniform cooling effect on the medium cylinder 10.

[0042] Each arc-shaped gas distributor 51 has an air inlet, typically located in its center. The gas distributor 51 and its connected air blowing pipes 52 are symmetrical about a predetermined vertical plane, a virtual vertical plane passing through the circumferential center point of the gas distributor 51 and the central axis of the medium cylinder 10. The multiple air blowing pipes 52 connected to each gas distributor 51 are mirror-symmetrically distributed about their respective predetermined vertical planes. This symmetrical arrangement ensures that the cooling gas distributed from the same gas distributor 51 reaches the medium cylinder 10 almost simultaneously, in equal amounts, and at equal pressures. This guarantees that the cooling airflow received by the medium cylinder 10 is balanced circumferentially, eliminating minor temperature differences caused by uneven airflow distribution.

[0043] In addition, the air inlet of the gas distributor 51 is located at the center point of the gas distributor 51 in the circumferential direction.

[0044] In some embodiments, at least one air blowing pipe 52 is gradually inclined toward the central axis of the medium cylinder 10 in the direction from the workpiece processing space toward the plasma generation space, that is, in the direction from bottom to top. The air outlet of the air blowing pipe 52 is oriented obliquely upward and inward (towards the central axis of the cavity 40).

[0045] The airflow ejected from multiple circumferentially uniformly arranged and inclined air-blowing pipes 52 will have a portion blown radially toward the outer wall of the medium cylinder 10, and then together in the annular gap between the Faraday cage 20 and the medium cylinder 10 to form a spiraling vortex flow field that rotates around the central axis of the equipment, thereby improving the cooling effect and uniformity of the medium cylinder 10.

[0046] The central axis of the inclined air blowing pipe 52 forms a preset angle with the central axis of the medium cylinder 10. This preset angle is usually designed to be greater than 0 degrees and less than or equal to 45 degrees, such as 5 degrees, 10 degrees, 15 degrees, 20 degrees, 25 degrees, 30 degrees, 35 degrees, 40 degrees or 45 degrees, or any two of the above.

[0047] The structure in the gas distributor 51 used to install the air blowing pipe 52 can be designed to have a specific tilt angle; or, the air blowing pipe 52 itself can be a curved structure.

[0048] In some examples, the air tube 52 is made of a non-metallic insulating material. The materials of the air tube 52 include, but are not limited to: ceramics, such as high-purity alumina ceramics; and high-performance engineering plastics, such as polytetrafluoroethylene (PTFE), perfluoroalkoxyalkane (PFA), and polyetheretherketone (PEEK).

[0049] In this embodiment, the air blowing pipe 52, made of a non-metallic insulating material, can completely prevent the air blowing pipe 52 from becoming an accidental conductive path or causing discharge, thus ensuring the stability of the plasma and the electrical safety of the equipment. Non-metallic materials, especially the aforementioned special plastics and ceramics, have smooth surfaces, are not prone to adsorbing contaminants, and have extremely low thermal volatiles and particulate release, which can avoid the introduction of metal or organic contamination and ensure process quality.

[0050] In some embodiments, the end of the axial clearance 21 facing the cavity 40 corresponds to the air outlet of the air blowing pipe 52, so that the cooling gas flows from bottom to top and has a long flow path.

[0051] In some examples, the axial clearance 21 of the Faraday cage 20 includes: a first sub-clearance 211, a second sub-clearance 212, and a third sub-clearance 213 arranged sequentially along the direction from the plasma generation space toward the workpiece processing space; circumferentially, the size of the first sub-clearance 211 is larger than the size of the second sub-clearance 212, and the size of the third sub-clearance 213 is larger than the size of the second sub-clearance 212; axially, the size of the second sub-clearance 212 is larger than the size of the first sub-clearance 211, and the size of the second sub-clearance 212 is larger than the size of the third sub-clearance 213; the air outlet of the air blowing pipe 52 corresponds to the portion of the second sub-clearance 212 near the third sub-clearance 213. The axial clearance 21 is approximately I-shaped.

[0052] When the high-speed cooling gas jet enters the lower end of the relatively narrow second sub-gap 212, according to Bernoulli's principle, the airflow velocity increases and the static pressure decreases, forming a local low-pressure zone. This low-pressure zone generates a strong adsorption force, efficiently drawing a large amount of relatively cool gas from the vicinity into the axial gap 21 through the wide third sub-gap 213. The drawn-in gas mixes with the high-speed cooling gas in the second sub-gap 212, forming a cooling mixed airflow with increased flow rate. This airflow flows from bottom to top, continuously scouring the outer wall of the medium cylinder 10 and carrying away the heat from the medium cylinder 10. Finally, the heated airflow flows out from the first sub-gap 211 and can then be discharged by the equipment exhaust system.

[0053] This embodiment utilizes a small amount of high-pressure cooling gas as a power source to entrain and drive a large amount of ambient gas to participate in cooling, significantly improving the effective cooling gas flow rate and heat exchange efficiency, while reducing the consumption of high-pressure cooling gas and the load on the gas supply system. Moreover, the gas drawn in from below, while flowing over the surface of the medium cylinder 10, also forms a clean airflow barrier from bottom to top, which helps to prevent plasma byproducts or particles from settling downwards, thus playing the role of a local clean flow field.

[0054] In some embodiments, the air blowing pipe 52 is detachably connected to the gas distributor 51, facilitating the disassembly of the air blowing pipe 52, for example, allowing for the replacement of air blowing pipes 52 with different inner diameters as needed. The gas distributor 51 may use an industrial quick-connect fitting with a self-locking and sealing ring to mate with the air blowing pipe 52; alternatively, the gas distributor 51 may use a precisely fitted thread and sealing gasket to secure it to the air blowing pipe 52. Alternatively, the gas distributor 51 may be fixed and sealed to the air blowing pipe 52 by a locating pin and a fastening clamp.

[0055] In some examples, the gas distributor 51 is provided with a first interface; the end of the air blowing pipe 52 opposite to its outlet is inserted into the first interface and threaded; a first seal is provided between the end of the air blowing pipe 52 opposite to its outlet and the first interface.

[0056] At the end of the gas distributor 51 (i.e., the end leading to the air blowing pipe 52), a first interface is machined. This interface is typically a tubular sleeve or connector with internal threads, the inner diameter of which is slightly larger than the outer diameter of the air blowing pipe 52 to allow the end of the air blowing pipe 52 to be inserted.

[0057] The end of the air blowing pipe 52 opposite to its air outlet is designed as a connecting end. The outer surface of this connecting end is machined with an external thread that matches the internal thread of the first interface. Simultaneously, one or more annular grooves are provided at or near the end of this connecting end, and a first sealing element, which is an O-ring, is disposed within these annular grooves. The O-ring can be made of materials such as fluororubber or silicone rubber.

[0058] In some embodiments, the inner diameter of the blowing pipe 52 is smaller than the inner diameter of the gas passage in the gas distributor 51. Thus, when the cooling gas enters the blowing pipe 52 from the gas distributor 51, the flow cross-sectional area suddenly decreases, creating a localized pressure drop due to resistance. In multiple blowing pipes 52 connected in parallel, the pressure drop provided by each blowing pipe 52 is consistent, and the cooling gas will choose the path with similar resistance to flow, thereby ensuring uniform distribution of the cooling gas to each blowing pipe 52 and thus ensuring uniform heat dissipation in the medium cylinder 10.

[0059] The semiconductor equipment provided in this embodiment is applicable to plasma etching scenarios of 3 kilowatts and above.

[0060] Other configurations of the semiconductor device in the above embodiments can be derived from various technical solutions now and in the future known to those skilled in the art, and will not be described in detail here.

[0061] In the description of this specification, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this disclosure.

[0062] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this disclosure, "multiple" means two or more, unless otherwise explicitly specified.

[0063] In this disclosure, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a communication connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0064] In this disclosure, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0065] The foregoing disclosure provides many different implementations or examples for carrying out different structures of this disclosure. To simplify the disclosure, specific examples of components and arrangements have been described above. Of course, these are merely examples and are not intended to limit the scope of this disclosure. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various implementations and / or arrangements discussed.

[0066] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any person skilled in the art can easily conceive of various variations or substitutions within the technical scope disclosed in this disclosure, and these should all be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A semiconductor device, characterized in that, include: A dielectric tube is used to enclose the plasma generation space; A Faraday cage is fitted outside the medium cylinder and has multiple axial gaps extending along the axial direction of the medium cylinder. A coil, sleeved outside the Faraday cage, is used to excite the process gas entering the plasma generation space to generate plasma. The cavity is located below the medium cylinder and has a workpiece processing space for processing the workpiece; A cooling device is located on the side of the cavity facing the medium cylinder; The cooling device includes: Gas distributor, used to supply cooling gas; Multiple air blowing pipes are distributed at intervals along the outer periphery of the Faraday cage; the outlet of at least one air blowing pipe corresponds to the axial gap, so that the cooling gas provided by the gas distributor can be blown to the medium cylinder through the axial gap.

2. The semiconductor device according to claim 1, characterized in that, The number of air blowing pipes is equal to the number of axial gaps.

3. The semiconductor device according to claim 1, characterized in that, The gas distributor has multiple components; The gas distributor is arc-shaped; The gas distributor is connected to at least two of the gas blowing pipes.

4. The semiconductor device according to claim 3, characterized in that, The gas distributor is connected to a plurality of air blowing pipes which are symmetrically distributed about a preset vertical plane; the preset vertical plane passes through the center of the gas distributor and through the central axis of the medium cylinder.

5. The semiconductor device according to claim 1, characterized in that, Along the direction from the workpiece processing space toward the plasma generation space, at least one of the air blowing pipes gradually tilts toward the central axis of the medium cylinder; And / or, the air tube is made of a non-metallic insulating material.

6. The semiconductor device according to claim 1, characterized in that, The end of the axial clearance facing the cavity corresponds to the air outlet of the air blowing pipe.

7. The semiconductor device according to claim 6, characterized in that, The axial clearance of the Faraday cage includes: A first sub-gap, a second sub-gap, and a third sub-gap are sequentially arranged along the direction from the plasma generation space toward the workpiece processing space; In the circumferential direction of the Faraday cage, the size of the first sub-gap is larger than the size of the second sub-gap, and the size of the third sub-gap is larger than the size of the second sub-gap; Along the axial direction of the Faraday cage, the size of the second sub-gap is larger than the size of the first sub-gap, and the size of the second sub-gap is larger than the size of the third sub-gap; The air outlet of the air blowing pipe corresponds to the portion of the second sub-gap that is close to the third sub-gap.

8. The semiconductor device according to claim 1, characterized in that, The air blowing pipe is detachably connected to the gas distributor.

9. The semiconductor device according to claim 8, characterized in that, The gas distributor is provided with a first interface; The end of the air blowing pipe opposite to its air outlet is inserted into the first interface and is threaded. A first seal is provided between the end of the air blowing pipe away from its outlet and the first interface.

10. The semiconductor device according to claim 1, characterized in that, The inner diameter of the air blowing pipe is smaller than the inner diameter of the channel in the gas distributor.

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