Sub-mount, light emitting device, and method for manufacturing light emitting device

Abstract

This invention provides a secondary mounting base capable of achieving a stable engagement state. The secondary mounting base has an upper surface and a lower surface, and comprises: a substrate; a metal layer disposed on the upper surface; and an alloy layer disposed on the metal layer. The upper surface has a first side that forms part of the outer edge when viewed from above, and a second side that is the opposite side of the first side. The alloy layer forms a continuous alloy region when viewed from above. The alloy region is disposed in at least a portion of a region where the distance from the first side is less than 100 μm, and in a portion of a region where the distance from the first side is 100 μm or more, and is not disposed in a region within 100 μm of at least a line segment extending at least 20% of the total length of the second side. In cross-section, the thickness of the alloy layer near the first end, which is the end of the first side, is greater than the thickness of the alloy layer near the second end, which is the opposite side of the first end, and the thickness of the alloy layer near the second end is 1.5 μm or more.

Description

Technical Field

[0001] This invention relates to a secondary mounting base, a light-emitting device, and a method for manufacturing the light-emitting device. Background Technology

[0002] WO2021 / 261253A1 discloses an invention for providing a semiconductor laser device capable of suppressing the adhesion of bonding material to the side of a semiconductor laser element.

[0003] In the semiconductor laser device disclosed in this document, the bonding material for bonding the semiconductor laser element to the secondary mounting base has an inner region for bonding with the semiconductor laser element and an outer region disposed outside the inner region, the width of which is adjusted. Summary of the Invention

[0004] The technical problem that the invention aims to solve

[0005] This invention provides a secondary mounting base capable of achieving a stable engagement state to solve technical problems.

[0006] Alternatively, instead of the aforementioned technical problem, an invention has been disclosed that solves the technical problem of providing a light-emitting device in which a semiconductor laser element is stably coupled to a secondary mounting base.

[0007] Alternatively, instead of the aforementioned technical problems, an invention has been disclosed that solves the technical problem of realizing a light-emitting device capable of arranging more light-emitting elements.

[0008] Alternatively, instead of addressing the aforementioned technical problems, an invention has been disclosed that solves the technical problem of realizing a small light-emitting device.

[0009] Alternatively, instead of the aforementioned technical problems, an invention has been disclosed that solves the technical problem of realizing a light-emitting device with reduced wiring resistance.

[0010] Alternatively, instead of the aforementioned technical problems, an invention has been disclosed that solves the technical problem of improving the output characteristics of a light-emitting device.

[0011] In addition, this specification also discloses an invention that solves multiple technical problems in combination with the above-mentioned technical problems.

[0012] Technical solutions for solving technical problems

[0013] The secondary mounting base disclosed in the embodiment has an upper surface and a lower surface, and includes: a substrate; a metal layer disposed on the upper surface side of the substrate; and an alloy layer disposed on the metal layer. The upper surface has a first side that forms part of the outer edge when viewed from above, and a second side that is the opposite side of the first side. The alloy layer forms at least one continuous alloy region when viewed from above. The alloy region is disposed in at least a portion of a region where the distance from the first side is less than 100 μm, and in a portion of a region where the distance from the first side is more than 100 μm. It is not disposed in a region within 100 μm of a line segment that is more than 20% of the total length of at least the second side. In a cross-section through the first side, the second side, and the alloy region, and in a cross-section in which the alloy region is not provided within 100 μm of the second side, the thickness of the alloy layer near the end of the first side (i.e., the first end) is greater than the thickness of the alloy layer near the end opposite to the first end (i.e., the second end), and the thickness of the alloy layer near the second end is 1.5 μm or more.

[0014] The light-emitting device disclosed in the embodiments is manufactured by disposing a semiconductor laser element on the alloy layer that is in a molten state on the aforementioned secondary mounting base, and bonding the semiconductor laser element to the secondary mounting base.

[0015] The light-emitting device disclosed in the embodiments includes: one or more secondary mounting bases having an upper surface and a lower surface; one or more semiconductor laser elements bonded to the secondary mounting bases; and a substrate for mounting the one or more secondary mounting bases. The secondary mounting bases include: a substrate; a metal layer disposed on the substrate; and an alloy layer disposed on the metal layer. The upper surface has a first side that, when viewed from above, forms part of an outer edge and a second side that is the opposite side of the first side. The alloy layer, when viewed from above, forms at least one continuous alloy region. The alloy region is disposed in at least a portion of a region within a range less than 100 μm from the first side, and is disposed at a distance from the first side... In a region of more than 100 μm, and not in a region within 100 μm of a line segment of more than 20% of the total length of at least the second side, the semiconductor laser element is disposed in the alloy region and bonded to the secondary mounting base via the alloy layer. In a cross-section through the first and second sides, and in a cross-section in which the alloy region is not provided within 100 μm of the second side, the maximum thickness of the first protrusion in the alloy layer disposed between the end on the first side (i.e., the first end) and the semiconductor laser element is greater than the maximum thickness of the second protrusion disposed between the end on the opposite side (i.e., the second end) and the semiconductor laser element.

[0016] In at least one of the inventions disclosed in the embodiments, a secondary mounting base capable of achieving a stable engagement state can be provided. Alternatively, a light-emitting device capable of providing a semiconductor laser element in a stable engagement state with the secondary mounting base can be provided. Attached Figure Description

[0017] Figure 1 This is a perspective view of the light-emitting device according to the embodiment.

[0018] Figure 2 This is a top view of the light-emitting device according to the embodiment.

[0019] Figure 3 This is a side view of the light-emitting device according to the embodiment.

[0020] Figure 4 yes Figure 2 A cross-sectional view of the light-emitting device according to the embodiment at line IV-IV.

[0021] Figure 5 This is a perspective view illustrating the constituent elements inside the package of the light-emitting device configured in the embodiment.

[0022] Figure 6 This is a top view used to illustrate the constituent elements arranged inside the package of the light-emitting device in the embodiment.

[0023] Figure 7 This is a three-dimensional view of the encapsulation of the implementation method.

[0024] Figure 8 This is a top view of the encapsulation of the implementation method.

[0025] Figure 9 yes Figure 8 A cross-sectional view of the package of the embodiment at the IX-IX line.

[0026] Figure 10 yes Figure 8 A cross-sectional view of the packaged implementation at the XX line.

[0027] Figure 11 This is a top view of the substrate of the implementation method.

[0028] Figure 12 This is a bottom view of the base of the implementation method.

[0029] Figure 13 yes Figure 11 A cross-sectional view of the substrate of the embodiment at line XIII-XIII.

[0030] Figure 14 This is a top view of the secondary mounting base in the embodiment where a semiconductor laser element is configured.

[0031] Figure 15 This is a side view of the secondary mounting base in the embodiment where a semiconductor laser element is configured.

[0032] Figure 16 This is a top view of the secondary mounting base in the implementation method.

[0033] Figure 17A yes Figure 16 A partially enlarged cross-sectional view of the secondary mounting base of the embodiment located at line XVIIA-XVIIA.

[0034] Figure 17B This is a schematic diagram of the secondary mounting base for reference.

[0035] Figure 18A This is an optical microscope image of the upper surface of the secondary mounting base in this embodiment.

[0036] Figure 18B This is an optical microscope image showing the results of a heating experiment on the secondary mounting base according to an embodiment.

[0037] Figure 18C This is a scanning electron microscope image of a cross-section of the secondary mounting base in this embodiment.

[0038] Figure 18D Is with Figure 18C The enlarged image of the secondary mounting base of the embodiment corresponding to box A.

[0039] Figure 18E Is with Figure 18C The enlarged image of the secondary mounting base of the embodiment corresponding to frame B.

[0040] Figure 18F Is with Figure 18C The enlarged image of the secondary mounting base of the embodiment corresponding to frame C.

[0041] Figure 19A This is an optical microscope image of the upper surface of the secondary mounting base of the comparative example.

[0042] Figure 19B This is an optical microscope image showing the results of a heating experiment on the secondary mounting base for the comparative example.

[0043] Figure 19C This is a scanning electron microscope image of a cross-section of the secondary mounting base of a comparative example.

[0044] Figure 19D Is with Figure 19C The enlarged image of the secondary mounting base corresponding to frame A in the comparison example.

[0045] Figure 19E Is with Figure 19C The enlarged image of the secondary mounting base corresponding to frame B in the comparison example.

[0046] Figure 19F Is with Figure 19C The enlarged image of the secondary mounting base corresponding to the comparison example in box C.

[0047] Figure 20A This is an optical microscope image of the upper surface of the secondary mounting base in the reference example.

[0048] Figure 20B This is an optical microscope image showing the results of a heating experiment on a secondary mounting base for a reference example.

[0049] Figure 20C This is a scanning electron microscope image of a cross-section of the secondary mounting base in the reference example.

[0050] Figure 20D Is with Figure 20C The enlarged image of the secondary mounting base of the reference example corresponding to box A.

[0051] Figure 20E Is with Figure 20C The enlarged image of the mounting base of the reference example corresponding to box B.

[0052] Figure 20F Is with Figure 20CThe enlarged image of the mounting base corresponding to the reference example in frame C.

[0053] Figure 21A This is a scanning electron microscope image of a cross section of a semiconductor laser element mounted on a secondary mounting base in an embodiment.

[0054] Figure 21B Is with Figure 21A The magnified image corresponding to frame A, showing the state in which the semiconductor laser element is attached to the secondary mounting base in the embodiment.

[0055] Figure 21C Is with Figure 21A The magnified image corresponding to frame B, showing the state in which the semiconductor laser element is attached to the secondary mounting base in the embodiment.

[0056] Figure 21D Is with Figure 21A The enlarged image corresponding to frame C is a view of the semiconductor laser element being attached to the secondary mounting base in the embodiment.

[0057] Figure 22A This is a scanning electron microscope image of a cross section of a comparative example in which a semiconductor laser element is attached to a secondary mounting base.

[0058] Figure 22B Is with Figure 22A The magnified image corresponding to box A, showing the state in which the semiconductor laser element is attached to the secondary mounting base in the comparative example.

[0059] Figure 22C Is with Figure 22A The magnified image corresponding to box B, showing the state in which the semiconductor laser element is attached to the mounting base in the comparative example.

[0060] Figure 22D Is with Figure 22A The magnified image corresponding to frame C is a comparison example of a semiconductor laser element mounted on a secondary mounting base.

[0061] Figure 23A This is a first optical microscope image showing the bonding surface of the semiconductor laser element peeled off from the secondary mounting base of the embodiment.

[0062] Figure 23B This is a second optical microscope image showing the bonding surface of the semiconductor laser element peeled off from the secondary mounting base of the embodiment.

[0063] Figure 24A This is a first optical microscope image showing the bonding surface of a semiconductor laser element peeled off from the secondary mounting base of a comparative example.

[0064] Figure 24BThis is a second optical microscope image showing the bonding surface of a semiconductor laser element peeled off from the secondary mounting base of the comparative example.

[0065] Figure 24C This is a third optical microscope image showing the bonding surface of the semiconductor laser element peeled off from the secondary mounting base of the comparative example.

[0066] Figure 24D This is a fourth optical microscope image showing the bonding surface of a semiconductor laser element peeled off from the secondary mounting base of the comparative example. Detailed Implementation

[0067] In this specification and claims, the term "polygon" refers to shapes that have undergone rounding, chamfering, chamfering, or filleting of their corners, including triangles, quadrilaterals, etc. Furthermore, shapes that have undergone processing of the middle portions of their sides, not limited to the corners (ends of sides), are also referred to as polygons. That is, shapes that retain the basic outline of a polygon and have undergone localized processing are included in the interpretation of "polygon" as described in this specification and claims.

[0068] Furthermore, this applies not only to polygons, but also to terms describing specific shapes such as trapezoids, circles, and concave / convex shapes. The same applies to the treatment of the sides that form the shape. That is, even if the corners or middle parts of a side are processed, the interpretation of "side" still includes the processed portion. Moreover, when distinguishing between unprocessed "polygons" or "sides" and processed shapes, the term "strict" is used, for example, written as "strict quadrilateral."

[0069] Furthermore, in this specification or claims, the descriptions of top and bottom, left and right, front and back, front and back, front and back, inside and outside, etc., are merely descriptions of relative positions, orientations, directions, etc., and may not be consistent with the actual relationship in use.

[0070] Furthermore, in the accompanying drawings, arrows are sometimes used to indicate directions such as the X, Y, and Z directions. The direction of these arrows is matched across multiple drawings of the same embodiment. Additionally, in the drawings, the direction of the arrows marked X, Y, and Z is designated as the positive direction, and the opposite direction as the negative direction. For example, an arrow marked with X at its tip is the X direction and is a positive direction. Furthermore, in this specification, the positive X direction is referred to as the "positive X direction," and the opposite direction is referred to as the "negative X direction." The term "X direction" encompasses both positive and negative directions. The same applies to the Y and Z directions.

[0071] Furthermore, in this specification, when an object is described as "one or more," both the method of having one object and the method of having multiple objects are summarized and described separately. Therefore, by specifying "one or more," implementations having one or more objects, implementations having at least one object, and implementations having multiple objects are all supported.

[0072] Furthermore, in this specification, the description of "one or each" objects is a summary of descriptions of one object in an embodiment having one object, descriptions of one object in an embodiment having multiple objects, and descriptions of multiple objects separately in an embodiment having multiple objects. Therefore, by describing "one or each" objects, it is supported that in an embodiment having one object, at least one of these objects has description content; in an embodiment having multiple objects, each of these multiple objects has description content; and in an embodiment having one or more objects, all objects have description content.

[0073] Furthermore, in this specification, for example, when describing constituent elements, the terms "component" or "part" are sometimes used. "Companion" refers to an object that is physically treated as a single unit. An object that is physically treated as a single unit can also be described as an object treated as a component during the manufacturing process. On the other hand, "part" refers to an object that does not physically need to be treated separately. For example, "part" is used when partially capturing a part of a component, or when multiple components are grouped together as a single object.

[0074] Furthermore, the distinction between "component" and "part" in the aforementioned writing does not imply a conscious limitation of the scope of claims in the interpretation of the theory of equality. That is, even if a constituent element is described as a "component" in the claims, the applicant does not solely recognize that treating that constituent element as a single physical unit is essential for the application of the present invention.

[0075] Furthermore, in this specification or claims, if a certain constituent element is represented by multiple elements, and they are presented separately, sometimes the prefixes "first" and "second" are added to the beginning of the constituent element for distinction. Additionally, the objects distinguished in this specification and the claims may differ. Therefore, even if a constituent element in the claims is described with the same appendix as in this specification, the object defined by that constituent element may not be consistent between this specification and the claims.

[0076] For example, in this specification, there are constituent elements distinguished by the designations "first," "second," and "third." When constituent elements designated as "first" and "third" in this specification are included in the claims, from an easily observable point of view, they are sometimes distinguished by the designations "first" and "second" in the claims. In this case, the constituent elements designated as "first" and "second" in the claims refer to the constituent elements designated as "first" and "third" in this specification, respectively. Furthermore, this rule is not limited to constituent elements and can be reasonably and flexibly applied to other objects.

[0077] Hereinafter, methods for implementing the present invention will be described. Furthermore, specific methods for implementing the present invention will be described with reference to the accompanying drawings. However, the methods for implementing the present invention are not limited to these specific methods. That is, the illustrated embodiments are not the only ways to implement the present invention. In addition, the size, positional relationships, etc., of the components shown in the drawings are sometimes exaggerated for ease of understanding.

[0078] <Implementation Method>

[0079] The light-emitting device 1 of the embodiment will be described. Figures 1 to 24D This is a diagram illustrating an exemplary manner of the light-emitting device 1. Figure 1 This is a three-dimensional view of the light-emitting device 1. Figure 2 This is a top view of the light-emitting device 1. Figure 3 This is a side view of the light-emitting device 1. Figure 4 yes Figure 2 A cross-sectional view of the light-emitting device 1 at line IV-IV. Figure 5 This is a perspective view illustrating the constituent elements arranged inside the package 10 of the light-emitting device 1. Figure 6 This is a top view used to illustrate the constituent elements arranged inside the package 10 of the light-emitting device 1. Figure 7 This is a 3D view of package 10. Figure 8 This is a top view of package 10. Figure 9 yes Figure 8 A cross-sectional view of the package 10 at the IX-IX line. Figure 10 yes Figure 8 A cross-sectional view of the package 10 at the XX line. Figure 11 This is a top view of base 11. Figure 12 This is a bottom view of base 11. Figure 13 yes Figure 11 A cross-sectional view of the substrate 11 at line XIII-XIII. Figure 14 This is a top view of the mounting base 30 with the semiconductor laser element 20 configured thereon. Figure 15 This is a side view of the mounting base 30 with the semiconductor laser element 20 configured thereon. Figure 16This is a top view of the mounting base 30. Figure 17A yes Figure 16 A partially enlarged cross-sectional view of the secondary mounting base 30 at line XVIIA-XVIIA. Figure 17B This is a schematic diagram of the secondary mounting base for reference. Figures 18A to 18F This is an image of the secondary mounting base in an embodiment. Figures 19A to 19F This is an image of the secondary mounting base for a comparative example. Figures 20A to 20F This is an image of the secondary mounting base for reference. Figures 21A to 21D This is an image showing the state in which a semiconductor laser element is attached to a secondary mounting base in an embodiment. Figures 22A to 22D This is an image of a comparative example where a semiconductor laser element is attached to a secondary mounting base. Figure 23A and Figure 23B This is an image showing the bonding surface of a semiconductor laser element peeled off from the secondary mounting base of an embodiment. Figures 24A to 24D This is an image showing the bonding surface of a semiconductor laser element peeled off from the secondary mounting base of the comparative example.

[0080] The light-emitting device 1 has multiple components. These components include a package 10, one or more semiconductor laser elements 20, one or more secondary mounting bases 30, one or more reflective components 40, one or more protective elements 50, multiple wirings 60, and optical components 70.

[0081] In addition, the light-emitting device 1 may also include other constituent elements. For example, the light-emitting device 1 may also include a semiconductor laser element separately from one or more semiconductor laser elements 20. Alternatively, the light-emitting device 1 may not include some of the constituent elements listed herein.

[0082] First, let’s explain each of the constituent elements.

[0083] (Package 10)

[0084] The package 10 includes a base 11 and a cover 14. The cover 14 is joined to the base 11 to form the package 10. An internal space is defined within the package 10 for configuring other components. This internal space is a closed space surrounded by the base 11 and the cover 14. Furthermore, this internal space can be sealed in a vacuum or hermetically sealed state.

[0085] When viewed from above, the outer edge of package 10 is rectangular. This rectangle can be a rectangle with a long side and a short side. In the illustrated package 10, the long side of the rectangle is in the same direction as the X direction, and the short side is in the same direction as the Y direction. Alternatively, the outer edge of package 10 may not be rectangular when viewed from above.

[0086] In package 10, an internal space is formed for configuring other constituent elements. The first upper surface 11A of package 10 is part of the area defining the internal space. In addition, each inner surface 11E and the lower surface 14B of package 10 are part of the area defining the internal space.

[0087] The substrate 11 has a first upper surface 11A and a lower surface 11B. The substrate 11 has a second upper surface 11C. The substrate 11 has one or more outer surfaces 11D. The substrate 11 has one or more inner surfaces 11E. One or more outer surfaces 11D intersect with the second upper surface 11C. One or more outer surfaces 11D intersect with the lower surface 11B. One or more inner surfaces 11E intersect with the second upper surface 11C.

[0088] Viewed from above, the outer edge of the substrate 11 is rectangular. Viewed from above, the outer edge of the substrate 11 is the same as the outer edge of the package 10. Viewed from above, the outer edge of the first upper surface 11A is rectangular. This rectangle can be a rectangle with a long side and a short side. The direction of the long side of the first upper surface 11A is parallel to the direction of the long side of the outer edge of the substrate 11. Alternatively, the outer edge of the first upper surface 11A may not be rectangular when viewed from above.

[0089] When viewed from above, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C is an annular surface that surrounds the first upper surface 11A when viewed from above. The second upper surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second upper surface 11C is referred to as the inner frame of the second upper surface 11C, and the frame defined by the outer edge of the second upper surface 11C is referred to as the outer frame of the second upper surface 11C.

[0090] The substrate 11 has a recess surrounded by a frame formed by a second upper surface 11C. The recess defines a portion in the substrate 11 that is recessed downwards from the second upper surface 11C. A first upper surface 11A is part of the recess. One or more inner side surfaces 11E are part of the recess. The second upper surface 11C is located above the first upper surface 11A.

[0091] The base 11 has one or more stepped portions 11F. Each stepped portion 11F has an upper surface 11G and a side surface 11H that intersects with and extends downward from the upper surface 11G. Here, a stepped portion 11F has only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner side surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0092] One or more step portions 11F are disposed inside the inner frame of the second upper surface 11C when viewed from above. One or more step portions 11F are formed along part or all of the inner side surface 11E when viewed from above. In the base 11, the side surface 11H is the inner side surface, but the side surface 11H and the inner side surface 11E are different surfaces. One or more inner side surfaces 11E and one or more side surfaces 11H are perpendicular to the first upper surface 11A. The perpendicularity here is allowed to be ±3 degrees.

[0093] One or more step portions 11F may include a first step portion 11F1 and a second step portion 11F2. The first step portion 11F1 and the second step portion 11F2 are disposed at positions opposite to each other on their respective side surfaces 11H. The first step portion 11F1 and the second step portion 11F2 are disposed on the short side side of the inner frame of the second upper surface 11C.

[0094] The substrate 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N can be components made of different materials. The substrate 11 can be configured to include a base component corresponding to the base portion 11M and a frame component corresponding to the frame portion 11N.

[0095] The base 11M includes a first upper surface 11A. The frame portion 11N includes a second upper surface 11C. The frame portion 11N includes one or more outer side surfaces 11D and one or more inner side surfaces 11E. The frame portion 11N includes one or more stepped portions 11F.

[0096] The lower surface of the base 11M constitutes part or all of the lower surface 11B of the base 11. When the lower surface of the base 11M constitutes part of the lower surface 11B of the base 11, the lower surface of the frame portion 11N constitutes the remaining area of ​​the lower surface 11B of the base.

[0097] The substrate 11 has a plurality of wiring portions 12A. The plurality of wiring portions 12A include one or more first wiring portions 12A1 disposed in the internal space of the package 10 and one or more second wiring portions 12A2 disposed on the outer surface of the package 10.

[0098] One or more first wiring portions 12A1 are disposed on the upper surface 11G of the stepped portion 11F. The substrate 11 has one or more first wiring portions 12A1 disposed on the upper surface 11G of the first stepped portion 11F1. The substrate 11 has one or more first wiring portions 12A1 disposed on the upper surface 11G of the second stepped portion 11F2.

[0099] One or more second wiring portions 12A2 are disposed on the lower surface 11B of the package 10. One or more second wiring portions 12A2 are disposed on the lower surface of the frame portion 11N. Alternatively, the second wiring portions 12A2 may be disposed on an outer surface of the package 10 that is different from the lower surface 11B.

[0100] When the substrate 11 is viewed from above, it is divided into two regions by the side 11H of the first step portion 11F1 and by an imaginary line parallel to the side 11H. In the region including the upper surface 11G of the first step portion 11F1, one or more second wiring portions 12A2 are provided on the lower surface 11B of the substrate 11.

[0101] When the substrate 11 is viewed from above, it is divided into two regions by the side 11H of the second step portion 11F2 and by an imaginary line parallel to the side 11H. In the region including the upper surface 11G of the second step portion 11F2, one or more second wiring portions 12A2 are provided on the lower surface 11B of the substrate 11.

[0102] In the substrate 11, one or more first wiring sections 12A1 are electrically connected to second wiring sections 12A2. One or more first wiring sections 12A1 are electrically connected to different second wiring sections 12A2.

[0103] The substrate 11 has a bonding pattern 13A. The bonding pattern 13A is disposed on the second upper surface 11C. The bonding pattern 13A is arranged in a ring shape. The bonding pattern 13A is arranged in a rectangular ring shape. In a top view, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0104] The substrate 11 can be formed, for example, using ceramic as the main material. Examples of ceramics that can be used as the main material of the substrate 11 include aluminum nitride, silicon nitride, aluminum oxide, or silicon carbide.

[0105] Here, the main material refers to the material that constitutes the largest proportion of the mass or volume in the formed object. It should be noted that when an object is formed from a single material, that material is the main material. That is, when a material is the main material, its proportion can be 100%.

[0106] The substrate 11 can also be formed using base components and frame components made from different main materials. For example, the base component can be formed using a metal or a metal-containing composite, graphite, diamond, or other materials with excellent heat dissipation as the main material. Examples of metals that can be used as the main material of the base component include copper, aluminum, or iron. Examples of composites containing a metal that can be used as the main material of the base component include copper-molybdenum or copper-tungsten. For example, the frame component can be formed using ceramics, which are listed as main materials of the substrate 11 above, as the main material.

[0107] The wiring section 12A can be formed using a metallic material as the main material, for example. Examples of metallic materials that can serve as the main material for the wiring section 12A include single metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, or alloys containing these metals. The wiring section 12A can be composed of one or more metal layers, for example.

[0108] The bonding pattern 13A can be formed, for example, using a metallic material as the main material. Examples of metallic materials that can serve as the main material of the bonding pattern 13A include single metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, or alloys containing these metals. The bonding pattern 13A can be composed of one or more metallic layers.

[0109] The cover 14 has an upper surface 14A and a lower surface 14B. Additionally, the cover 14 has one or more side surfaces 14C. The cover 14 is constructed in the shape of a rectangular parallelepiped. Alternatively, the shape of the cover 14 may not be rectangular parallelepiped.

[0110] The cover 14 is joined to the base 11. The lower surface 14B of the cover 14 is joined to the second upper surface 11C of the base 11. The cover 14 is joined to the base 11 by the joining pattern 13A. The cover 14 is joined to the base 11 by an adhesive.

[0111] The cover 14 has light transmittance. Here, light transmittance means that the transmittance of light incident on the cover 14 is 80% or more. In addition, the cover 14 may also have a portion of non-transparent areas.

[0112] The cover 14 can be formed, for example, using glass as the main material. Alternatively, the cover 14 can be formed, for example, using sapphire as the main material.

[0113] (Semiconductor laser element 20)

[0114] The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and multiple side surfaces 21C. The upper surface 21A is rectangular with long and short sides. The shape of the semiconductor laser element 20 when viewed from above is rectangular with long and short sides. However, the shape of the upper surface 21A and the shape of the semiconductor laser element 20 when viewed from above are not limited to these.

[0115] The semiconductor laser element 20 has a light emitting surface 22. For example, the side surface 21C can serve as the light emitting surface 22. The side surface 21C that serves as the light emitting surface 22 intersects with the short side of the upper surface 21A. Alternatively, for example, the upper surface 21A can serve as the light emitting surface 22.

[0116] The semiconductor laser element 20 can be a single-emitter semiconductor laser element consisting of one emitter. Alternatively, the semiconductor laser element 20 can be a multi-emitter semiconductor laser element consisting of multiple emitters.

[0117] For example, the semiconductor laser element 20 can be a semiconductor laser element that emits red light. Alternatively, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits green light. Alternatively, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits blue light. Furthermore, the semiconductor laser element 20 can also be a semiconductor laser element that emits light of other colors or wavelengths.

[0118] Here, blue light refers to light with a peak emission wavelength in the range of 420nm to 494nm. Green light refers to light with a peak emission wavelength in the range of 495nm to 570nm. Red light refers to light with a peak emission wavelength in the range of 605nm to 750nm.

[0119] Semiconductor laser elements 20 that emit blue or green light can include those comprising nitride semiconductors. Examples of GaN-based semiconductors include GaN, InGaN, and AlGaN. Semiconductor laser elements 20 that emit red light can include those comprising InAlGaP, GaInP, and GaAs-based semiconductors such as GaAs and AlGaAs.

[0120] Semiconductor laser element 20 emits directional laser light. Diverging light is emitted from the light emitting surface 22 (emission end face) of semiconductor laser element 20. The light emitted from semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emitting surface 22. FFP is the shape and intensity distribution of the emitted light at a position away from the light emitting surface of semiconductor laser element.

[0121] Here, light passing through the center of the elliptical shape of the FFP, in other words, light with peak intensity in the FFP's intensity distribution, is referred to as light traveling along the optical axis or light passing through the optical axis. Furthermore, in the intensity distribution of the FFP, light with a peak intensity value of 1 / e... 2 Light of the above intensities is called the primary component of light.

[0122] The shape of the FFP (Factor-Free Plane) emitted from the semiconductor laser element 20 is an ellipse in a plane parallel to the light-emitting surface 22, where the stacking direction is longer than the direction perpendicular to the stacking direction. The stacking direction refers to the direction in which multiple semiconductor layers containing the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the planar direction of the semiconductor layer. Alternatively, the major axis direction of the ellipse of the FFP can be called the fast axis direction of the semiconductor laser element 20, and the minor axis direction can be called the slow axis direction of the semiconductor laser element 20.

[0123] Based on the light intensity distribution of FFP, 1 / e of the peak light intensity 2 The light divergence angle of the light intensity is defined as the light divergence angle of the semiconductor laser element 20. Here, the light divergence angle is defined as the peak light intensity (the light passing through the optical axis) and 1 / e of the peak light intensity. 2 The divergence angle is represented by the angle formed by the light intensity. It should be noted that the divergence angle of light, besides being 1 / e of the peak light intensity, is also considered. 2 Besides the light intensity, there are cases where the light intensity is calculated based on half of the peak light intensity. In this specification, when simply referred to as the "divergence angle of light," it refers to 1 / e of the peak light intensity. 2 The divergence angle of light under light intensity.

[0124] The divergence angle of the light emitted from the semiconductor laser element 20 along its fast axis can be greater than 30 degrees and less than 75 degrees. Furthermore, the divergence angle along its slow axis can exceed 0 degrees and be less than 20 degrees. Additionally, the divergence angle along the fast axis is larger than the divergence angle along the slow axis.

[0125] For example, the divergence angle of blue light emitted from the semiconductor laser element 20 along the fast axis can be greater than 30 degrees and less than 60 degrees, and the divergence angle along the slow axis can be greater than 5 degrees and less than 20 degrees. Similarly, the divergence angle of green light emitted from the semiconductor laser element 20 along the fast axis can be greater than 30 degrees and less than 60 degrees, and the divergence angle along the slow axis can be greater than 5 degrees and less than 20 degrees. Furthermore, the divergence angle of red light emitted from the semiconductor laser element 20 along the fast axis can be greater than 40 degrees and less than 75 degrees, and the divergence angle along the slow axis can exceed 0 degrees and be less than 20 degrees.

[0126] Viewed from above, the width of the semiconductor laser element 20 in the direction perpendicular to the light emitting surface 22 is 1000 μm or more. Alternatively, this width can be 1500 μm or more. Alternatively, this width can be 2000 μm or less. It should be noted that the width of the semiconductor laser element 20 is not limited to the numerical range listed here. In the illustrated semiconductor laser element 20, the direction perpendicular to the light emitting surface 22 is the same as the Y-direction.

[0127] Viewed from above, the width of the semiconductor laser element 20 in the direction parallel to the light emitting surface 22 is 100 μm or more. Alternatively, this width can be 400 μm or more. Alternatively, this width can be 500 μm or less. Furthermore, the width in the semiconductor laser element 20 is not limited to the numerical range listed here. In the illustrated semiconductor laser element 20, the direction parallel to the light emitting surface 22 is the same as the X-direction.

[0128] (Secondary mounting base 30)

[0129] The secondary mounting base 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be considered a mounting surface for mounting other components. The upper surface 31A is rectangular in shape. This rectangle of the upper surface 31A may have a short side and a long side. Alternatively, the shape of the upper surface 31A may not be rectangular.

[0130] The secondary mounting base 30, viewed from above, has a rectangular shape. This rectangle of the secondary mounting base 30 may have a short side and a long side. Alternatively, the shape of the secondary mounting base 30 may not be rectangular when viewed from above. When viewed from above, the secondary mounting base 30 may have a shape in which the length in one direction (hereinafter referred to as the short side direction of the secondary mounting base 30) is smaller than the length in the direction perpendicular to it (hereinafter referred to as the long side direction of the secondary mounting base 30). In the illustrated secondary mounting base 30, the short side direction is the same as the X direction, and the long side direction is the same as the Y direction.

[0131] The upper surface 31A has a first side 31A1 and a second side 31A2 that, when viewed from above, respectively form part of the outer edge. Furthermore, the second side 31A2 is the side opposite to the first side 31A1. Additionally, the upper surface 31A has a third side 31A3 and a fourth side 31A4 that, when viewed from above, respectively form part of the outer edge. The fourth side 31A4 is the side opposite to the third side 31A3. The first side 31A1 and the second side 31A2 can be long sides, and the third side 31A3 and the fourth side 31A4 can be short sides.

[0132] The secondary mounting base 30 can be configured to have a substrate 32A and an upper metal member 32B. Alternatively, the secondary mounting base 30 can also be configured to have a lower metal member 32C. The upper metal member 32B is disposed on the upper surface of the substrate 32A. The lower metal member 32C is disposed on the lower surface of the substrate 32A. The secondary mounting base 30 also includes a wiring layer 33. The wiring layer 33 is disposed on top of the upper metal member 32B.

[0133] The wiring layer 33 has a rectangular shape when viewed from above. This rectangle of the wiring layer 33 can have a short side and a long side. The short side of the wiring layer 33 is parallel to the short side of the secondary mounting base 30, and the long side of the wiring layer 33 is parallel to the long side of the secondary mounting base 30.

[0134] In a top view, the wiring layer 33 is positioned near one end of the upper metal component 32B along the short side of the secondary mounting base 30. The distance from the wiring layer 33 to the other end is preferably 150 μm or more. By ensuring a distance of 150 μm or more, it is easy to secure the area for mounting the secondary mounting base 30 and for wiring to the secondary mounting base 30. In a top view, an imaginary straight line L passing through the midpoint of the width of the upper surface 31A in the short side direction and parallel to the long side direction passes through the wiring layer 33. Therefore, the secondary mounting base 30 can be designed with a smaller width in the short side direction.

[0135] In the long side direction of the secondary mounting base 30 when viewed from above, the wiring layer 33 is disposed near one of the two ends of the upper metal component 32B. The distance from the wiring layer 33 to this end is 0 or more and 50 μm or less. The distance from the wiring layer 33 to the other end of this pair of ends can be 100 μm or more and 700 μm or less. In the illustrated secondary mounting base 30, the wiring layer 33 is disposed near the first side 31A1 and the third side 31A3.

[0136] The substrate 32A is insulating. The substrate 32A is formed, for example, from silicon nitride, aluminum nitride, or silicon carbide. The main material of the substrate 32A can be a ceramic with good heat dissipation (high thermal conductivity).

[0137] The main material of the upper metal component 32B is a metal such as copper or aluminum. The upper metal component 32B has one or more metal layers. The upper metal component 32B may have multiple metal layers with different metals as the main material. For example, a Pt metal layer can be formed on the upper surface of the upper metal component 32B. Hereinafter, the metal layer constituting the upper surface of the upper metal component 32B will be referred to as metal layer 32B1.

[0138] The lower metal component 32C is primarily made of metals such as copper and aluminum. The lower metal component 32C has one or more metal layers. The lower metal component 32C may have multiple metal layers, each primarily made of a different metal.

[0139] Wiring layer 33 can be an alloy layer. For example, an AuSn alloy layer such as AuSn solder can be used. Furthermore, the alloy constituting the alloy layer is not limited to AuSn; for example, AgSn or CuSn can also be considered. Hereinafter, when wiring layer 33 is specifically designated as an alloy layer, it will be referred to as alloy layer 34 instead of wiring layer 33.

[0140] For example, the length of the short side of the secondary mounting base 30 is 500 μm or more and 850 μm or less. Furthermore, the length of the long side of the secondary mounting base 30 is 1500 μm or more and 2700 μm or less. Additionally, the difference between the length of the long side and the length of the short side of the secondary mounting base 30 is 1000 μm or more and 2000 μm or less.

[0141] For example, the thickness of the secondary mounting base 30 (width in the direction perpendicular to the upper surface 31A) is 200 μm or more and 400 μm or less. Additionally, for example, the thickness of the substrate 32A is 100 μm or more and 300 μm or less. Furthermore, for example, the thickness of the upper metal member 32B is 5 μm or more and 80 μm or less. Furthermore, for example, the thickness of the lower metal member 32C is 5 μm or more and 80 μm or less.

[0142] The width of the wiring layer 33 in the short side direction of the secondary mounting base 30 or in the short side direction can be 250 μm or more and 700 μm or less. The width of the wiring layer 33 in the long side direction of the secondary mounting base 30 or in the long side direction can be 1200 μm or more and 2700 μm or less. In addition, for example, the thickness of the wiring layer 33 is 1.0 μm or more and 5.0 μm or less.

[0143] Here, the shape of the alloy layer 34 when it is provided on the metal layer 32B1 will be described. Furthermore, for ease of shape comparison, a reference example of a secondary mounting base with an alloy layer provided on top of the metal layer will be shown. Figure 17B .exist Figure 17B In other types of secondary mounting bases (referencing the secondary mounting base in the example), the metal layer 32B2, alloy layer 35, and alloy region 35A are formed.

[0144] The alloy layer 34 forms a continuous alloy region 34A when viewed from above. The alloy layer 34 forms at least one alloy region 34A. When viewed from above, it may also form multiple alloy regions 34A that are separated from each other.

[0145] When viewed from above, if the metal layer 32B1 extends to the outside of the alloy region 34A, a thinner region 34B1, where the alloy layer 34 gradually thins, can be formed at the end of the alloy region 34A due to the influence of the metal layer 32B1. The formation of the thinner region is also the same in other types of secondary mounting bases; if the metal layer 32B2 extends to both sides of the alloy region 35A of the alloy layer 35, a thinner region 35B1 can be formed at the ends of both sides of the alloy region 35A.

[0146] As with the mounting base 30, when the wiring layer 33 is close to one end and far from the other end, as shown in the figure, a thin-layer region 34B1 can be formed only on the other end side of the two ends of the wiring layer 33. In addition, compared with the thin-layer region 34B1, the alloy region 34A has a flat region 34B2 on which the alloy layer 34 is formed with a certain thickness.

[0147] Similar to alloy layer 34, there are cases where wiring layers 33 formed from alloys of two or more metals offer more advantageous effects than wiring layers formed from a single metal. For example, during bonding, AuSn solder ensures a longer melting time compared to Sn solder without Au. This melting time varies depending on the degree of Au present around Sn in wiring layer 33; if Au is sufficiently present, a long melting time can be ensured. Therefore, even when the AuSn solder alloy layer is formed with thin-layered regions, the possibility of insufficient melting time due to excessively thin regions is also considered.

[0148] Furthermore, the melting time is also affected by whether the thinned region exists on both sides of the alloy layer 34 or only on one side. For example, the melting time of the alloy layer 34 is shorter when there is a thinned region on only one side compared to when there are thinned regions on both sides.

[0149] Therefore, it is necessary to consider the shape of the wiring layer 33 in the thickness direction to set an appropriate design thickness. It should be noted that the term "design thickness" is used here because it is usually difficult to precisely control the thickness at specific locations within the thinning region. The thickness of the area that is not a thinning region (flat area) is considered the target thickness for manufacturing, in other words, the design thickness. That is, to ensure sufficient thickness in the thinning region, it is preferable to set a design thickness.

[0150] For example, in the case of bonding a semiconductor laser element with a width of 400 μm to a secondary mounting base on which metal layers are extended on both sides of an alloy region with a width of 520 μm, and in the case of bonding a semiconductor laser element with a width of 400 μm to a secondary mounting base on which metal layers are extended only on one side of an alloy region with a width of 520 μm, even if the thickness of the alloy region is designed to be the same (e.g., 1.5 μm), a stable bonding will be obtained in the former secondary mounting base, while an unstable bonding will not be obtained in the latter secondary mounting base.

[0151] Figures 18A to 20F This is an image showing the experimental results of observing the state of the alloy layer when the metal layer constituting the upper surface of the upper metal component 32B is Pt and an alloy layer of AuSn solder is formed on top of this metal layer. Figures 18A to 18F This represents an example. Figures 19A to 19FIndicating comparative examples, Figures 20A to 20F This indicates a reference example.

[0152] It should be noted that the reference example here refers to an example corresponding to the secondary mounting base of the reference example having thinned regions on both sides. Furthermore, compared to the secondary mounting base of the reference example, embodiments and comparative examples with smaller thinned regions are designated as comparative examples, while those with equivalent or greater thicknesses are designated as embodiments. For example, it is common to see documents that use embodiments and comparative examples separately based on novelty, but in this specification, the classification of embodiments, comparative examples, and reference examples has no meaning other than that described above. Additionally, for a certain invention, it can be classified as whether the embodiments and comparative examples solve the technical problem of the invention; however, for other inventions, it is also fully considered that both embodiments and comparative examples solve the technical problem of the other invention.

[0153] Figure 18A and Figure 18B The former represents the stage of alloy layer formation, while the latter represents the image of the upper surface after being heated in an oven at 320°C for 2 seconds and then cooled to room temperature. Figure 19A and Figure 19B Similarly, Figure 20A and Figure 20B The same applies.

[0154] exist Figures 18D to 18F The letters A through C displayed in the corners of the image indicate... Figure 18C The enlarged images corresponding to boxes A through C shown. Figures 19D to 19F and Figure 19C Similarly, Figures 20D to 20F and Figure 20C The same applies.

[0155] The embodiment is a secondary mounting base with the alloy layer positioned close to one side and a designed thickness of 2.5 μm. The comparative example is a secondary mounting base with the alloy layer positioned close to one side and a designed thickness of 1.5 μm. The reference example is a secondary mounting base with the alloy layer not positioned close to one side and a designed thickness of 1.5 μm.

[0156] If we compare the comparative example with the reference example, the alloy layer thickness is designed to be 1.5 μm in both cases, but... Figure 19F and Figure 20F As shown in the image, the minimum thickness in the thinned region 34B1 of the comparative example is approximately 0.75 μm, while the minimum thickness in the thinned region 35B1 of the reference example is approximately 1.0 μm. This demonstrates that even with the same designed thickness of the alloy layer, the minimum thickness of the thinned region can differ depending on whether it is formed only on one side or on both sides.

[0157] In addition, such as Figure 19B and Figure 20B As shown in the image, due to the difference in thickness, the states of alloy layers heated at the same temperature and time are different. Regardless of the alloy layer, a polarization between the hardened and molten states is observed, but the degree varies. Furthermore, the central portion of the alloy layer, with a darker color, is in a molten state at the moment heating stops, while the lighter-colored outer portion is in a hardened state, thus exhibiting this polarization. It is known that the alloy layer progresses from a molten state to a hardened state. Even when constituent elements are placed on a hardened alloy layer, the bonding is insufficient. However, compared to the reference example, the comparative example shows improved hardening of the thinned region, resulting in an expansion of the hardened region.

[0158] Comparative embodiments and reference examples, such as Figure 18F , Figure 20D and Figure 20F As shown in the image, the minimum thickness of the thinned region in the secondary mounting base of the embodiment can be greater than the minimum thickness of the thinned region in the secondary mounting base of the reference example. Thus, in an alloy layer where a thinned region is formed only on one side, by making the designed thickness greater than that of an alloy layer where thinned regions are formed on both sides, the minimum thickness condition can be made consistent. Figure 18B As shown in the image, in the secondary mounting base of the embodiment, there is almost no polarization between the solidified state and the molten state, and the alloy layer can generally maintain the molten state.

[0159] In this way, by taking into account the configuration of the alloy layer 34 in the secondary mounting base 30 and appropriately adjusting its thickness, sufficient melting time can be ensured, enabling a stable bonding state with other components. As a benchmark for sufficient melting time, an example is a time of 5 seconds or more, but this can be appropriately set based on the manufacturing process. If a longer melting time can be ensured, bonding to the secondary mounting base 30 becomes easier.

[0160] For example, when a light-emitting element such as a semiconductor laser element 20 is bonded to a secondary mounting base 30, in order to arrange more light-emitting elements within a given space, it is sometimes desirable to reduce the shape of the secondary mounting base 30. Therefore, it is also possible to provide an alloy layer on one side close to the upper surface 31A of the secondary mounting base 30. In such cases, by forming the alloy layer 34 with an appropriate thickness, a light-emitting device in which the light-emitting elements are stably bonded to the secondary mounting base can be achieved.

[0161] On the metal layer 32B1, a continuous alloy region 34A is provided in a region within a distance of less than 100 μm from the first side 31A1, and in a part of a region within a distance of more than 100 μm from the first side 31A1, but not in a region within a distance of less than 100 μm from the second side 31A2. If, in cross-section, the end of the alloy region 34A on the first side 31A1 is designated as the first end 34C, and the end of the alloy region 34A on the second side 31A2 is designated as the second end 34D, then the thickness of the alloy layer 34 near the second end 34D is preferably 1.5 μm or more. Furthermore, the thickness of the alloy layer 34 near the first end 34C is greater than the thickness of the alloy layer 34 near the second end 34D. By forming such an alloy layer 34, the secondary mounting base 30 can achieve a stable bonding state. Note that the cross-section here is a cross-section through the first side 31A1, the second side 31A2, and the alloy region 34A.

[0162] It should be noted that the thickness of the alloy layer 34 near the end may also vary, for example, as shown in the example. Figure 17A The first end, where the alloy layer 34 does not form a neat, vertically upright shape (see reference). Figure 18D Therefore, in such a case, theoretically, the thickness at the end could be zero. For example, the thickness near the end could be the maximum thickness within a few μm from the end. Alternatively, for example, the thickness near the end could be the maximum thickness within 5.0 μm from the end.

[0163] This consideration also applies to the thinned region 34B1. Since the ends of the alloy layer 34 are not neatly vertically erected, they become relatively thinner. Therefore, while this can be understood as "thinning" if the concept is extended to its maximum extent, it is not the intended state. There is no region on the first end 34C side that decreases in thickness as it approaches the first end 34C; that is, it can be said to be the same region as the thinned region 34B1 formed on the second end 34D side.

[0164] When viewed in section, alloy region 34A has a thinned region 34B1 on the second end 34D side, whose thickness decreases as it approaches the second end 34D. In section view, the thinned region 34B1 is formed on the second end 34D side with a length of 3 μm or more. In section view, on the first end 34C side, a thinned region can be formed with a length of 0 μm or more but less than 3 μm. Furthermore, a length of 0 μm for the thinned region means that no thinned region is substantially formed.

[0165] Furthermore, the alloy region 34A is not necessarily set in the entire region within a distance of less than 100 μm from the first side 31A1, but is at least set in a portion of that region. Similarly, the alloy region 34A is not necessarily set in the entire region within a distance of less than 100 μm from the second side 31A2, but is at least not set in a portion of that region.

[0166] Alloy region 34A is not provided in the region within 100 μm of a line segment that is at least 20% of the total length of the second side 31A2. Alternatively, alloy region 34A is not provided in the region within 100 μm of a line segment that is at least 50% of the total length of the second side 31A2. In the illustrated light-emitting device 1, alloy region 34A is not provided in the entire region within 100 μm of the second side 31A2.

[0167] The maximum thickness of the alloy layer 34 forming the alloy region 34A is 2.0 μm or more. Alternatively, the maximum thickness of the alloy layer 34 forming the alloy region 34A can be 5.0 μm or less. Or, the maximum thickness of the alloy layer 34 forming the alloy region 34A can be 3.5 μm or less. The maximum thickness can be equal to the designed thickness, therefore the value of the maximum thickness can affect the melting time. Furthermore, the maximum thickness of the alloy layer 34 here is determined excluding the alloy layer 34 isolated from the alloy region 34A.

[0168] The difference between the maximum and minimum thickness in the thinned region 34B1 of the secondary mounting base 30 is 0.7 μm or more. Alternatively, this difference can be 0.9 μm or more, and further, 1.1 μm or more. Additionally, as... Figure 19F and Figure 20F As shown in the image, in the secondary mounting base of the reference example, the difference between the maximum and minimum thickness is approximately 0.6 μm, while in the secondary mounting base of the comparative example, the difference between the maximum and minimum thickness is approximately 0.75 μm. In the secondary mounting base of the embodiment, the difference between the maximum and minimum thickness is larger compared to the secondary mounting bases of the comparative and reference examples.

[0169] like Figure 18F and Figure 19F As shown in the image, the secondary mounting base can have a thickened region 34B3 between the thinned region and the end of the side where the thinned region 34B1 is formed. For example, when the thinned region 34B1 is formed on the second end 34D side, the alloy layer 34, in cross-section, has a thickened region 34B3 with a thickness greater than the minimum thickness of the thinned region 34B1 between the thinned region 34B1 and the second end 34D on the second end 34D side. Furthermore, as... Figure 20D and Figure 20FAs shown in the image, a thickened area can also be formed in the secondary mounting base of the reference example.

[0170] It is believed that by forming a thickened region 34B3 between the thinned region 34B1 and the end, the transition of the thinned region 34B1 to the solidified state can be delayed, and the molten state can be easily maintained.

[0171] (Reflective component 40)

[0172] The reflecting component 40 has a lower surface 41A and a light-reflecting surface 41B. Furthermore, the light-reflecting surface 41B is inclined relative to the lower surface 41A. The straight line connecting the lower and upper ends of the light-reflecting surface 41B is inclined relative to the lower surface 41A. The angle at which the light-reflecting surface 41B is inclined relative to the lower surface 41A is called the tilt angle of the light-reflecting surface 41B.

[0173] The light-reflecting surface 41B is a plane. Alternatively, the light-reflecting surface 41B can also be a curved surface. The tilt angle of the light-reflecting surface 41B is 45 degrees. Alternatively, the tilt angle of the light-reflecting surface 41B may not be 45 degrees.

[0174] The main material of the reflective component 40 can be glass, metal, etc. Heat-resistant materials can be used as the main material of the reflective component 40. Examples of main materials include quartz or BK7 (borosilicate glass) glass, and metals such as Al. The reflective component 40 can also be formed using Si as the main material.

[0175] If the main material is a reflective material such as Al, the light-reflecting surface 41B can be formed from the main material. Alternatively, instead of forming the light-reflecting surface 41B from the main material, the main material can be used to form the approximate shape of the reflective component 40, and the light-reflecting surface 41B can be formed on the surface of the approximate shape. In this case, the light-reflecting surface 41B can be formed, for example, using a metal layer such as Ag or Al, or a dielectric multilayer film such as Ta2O5 / SiO2, TiO2 / SiO2, or Nb2O5 / SiO2.

[0176] The reflectivity of the light-reflecting surface 41B relative to the peak wavelength of the light incident on it is 90% or more. Alternatively, this reflectivity may be 95% or more. Furthermore, the reflectivity may be 99% or more. The reflectivity may be 100% or less.

[0177] (Protective Component 50)

[0178] The protective element 50 has an upper surface, a lower surface, and one or more side surfaces. The protective element 50 is rectangular in shape. Alternatively, the protective element 50 may not be rectangular in shape.

[0179] The protection element 50 is used to prevent excessive current from flowing through a specific component (such as a semiconductor laser component) and causing damage. A Zener diode can be used as an example of the protection element 50. Furthermore, a Zener diode formed of Si can be employed as the Zener diode.

[0180] (Wiring 60)

[0181] Wiring 60 is a linear conductive material with its two ends serving as joints. The joints at both ends become joints with other components. Wiring 60 is used for electrical connection between two components. Wiring 60 is, for example, a metallic conductor. Metals such as gold, aluminum, silver, and copper can be used.

[0182] (Optical component 70)

[0183] The optical component 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The optical component 70 imparts optical effects to light incident upon it. The optical effects imparted to light by the optical component 70 include, for example, focusing, collimation, diffusion, polarization, diffraction, wave combining, guiding, reflection, and wavelength conversion.

[0184] The optical component 70 has an optically active surface that imparts optical effects. The upper surface 71A, lower surface 71B, or side surface 71C can serve as the optically active surface. Alternatively, the optically active surface can be located at a different position than the upper surface 71A, lower surface 71B, and side surface 71C. For example, the optically active surface can also be formed internally, rather than on the surface of the optical component 70.

[0185] Optical component 70 may have one or more lens surfaces 71D. Lens surface 71D is the optical working surface of optical component 70. Alternatively, optical component 70 with lens surface 71D may also be referred to as a lens component. Light emitted from optical component 70 through lens surface 71D is given focusing, diffusion, or collimating optical effects by optical component 70. For example, optical component 70 is a collimating lens that causes light entering optical component 70 to be collimated and emitted as collimated light.

[0186] One or more lens surfaces 71D are disposed on the upper surface 71A side. Alternatively, lens surfaces 71D may also be disposed on the lower surface 71B side. The upper surface 71A and the lower surface 71B are planar. One or more lens surfaces 71D intersect with the upper surface 71A. When viewed from above, one or more lens surfaces 71D are surrounded by the upper surface 71A.

[0187] When viewed from above, the optical component 70 has a rectangular shape. However, the shape of the optical component 70 may not be rectangular when viewed from above. The lower surface 71B is flat. No lens surface 71D is formed on the lower surface 71B side of the optical component 70. The lower surface 71B has a rectangular shape. However, the shape of the lower surface 71B may not be rectangular.

[0188] In the optical component 70, the portion that overlaps with the lens surface 71D when viewed from above is designated as a lens portion 72A. In the optical component 70, the portion that overlaps with the upper surface 71A when viewed from above is designated as a non-lens portion 72B. The lower surface 71B has a region that constitutes the lower surface of one or more lens portions 72A and a region that constitutes the lower surface of the non-lens portion 72B.

[0189] The optical component 70 may have a plurality of lens surfaces 71D continuously formed in one direction. When viewed from above, the direction in which the plurality of lens surfaces 71D are arranged is called the connecting direction of the lenses. In the illustrated optical component 70, the connecting direction is the same as the X-direction.

[0190] Multiple lens surfaces 71D are formed such that the vertices of each lens surface 71D are aligned on a straight line. This imaginary straight line connecting the vertices is parallel to the lower surface 71B of the optical component 70. It should be noted that this parallelism includes a difference within ±5 degrees.

[0191] The curvature of some or all of the multiple lens surfaces 71D, and more than two lens surfaces 71D, can be the same. All of the multiple lens surfaces 71D can have the same curvature.

[0192] The optical component 70 is transparent. The transmittance of the optical component 70 relative to the peak wavelength of light incident on it is 80% or more. The optical component 70 may also have transparent areas and opaque areas (hereinafter referred to as opaque areas). In the opaque areas, the transmittance relative to the peak wavelength of light incident on the optical component 70 is 50% or less. The optical component 70 can be formed using, for example, glass such as BK7.

[0193] Next, the light-emitting device will be explained.

[0194] (Light-emitting device 1)

[0195] In the light-emitting device, one or more semiconductor laser elements 20 are bonded to one or more secondary mounting bases 30. One or more semiconductor laser elements 20 are disposed on wiring layer 33. One or more semiconductor laser elements 20 are disposed on alloy region 34A. One or more semiconductor laser elements 20 are bonded to the secondary mounting base 30 via alloy layer 34.

[0196] By placing the semiconductor laser element 20 on the molten alloy layer 34, it is possible to bond the semiconductor laser element 20 to the secondary mounting base 30. Furthermore, by placing the secondary mounting base 30 on a heater and heating it, the alloy layer 34 changes state to a molten state over time. By setting the time from placing the secondary mounting base 30 on the heater to placing the semiconductor laser element 20 on the secondary mounting base 30, it is possible to control the placement of the semiconductor laser element 20 on the molten alloy layer 34.

[0197] One or more semiconductor laser elements 20 are disposed in the flat region 34B2. When viewed from above, one or more semiconductor laser elements 20 do not overlap with the thinned region 34B1 formed on the second end 34D side. Therefore, the semiconductor laser elements 20 can be easily and stably bonded to the secondary mounting base 30.

[0198] One or more semiconductor laser elements 20 can be configured such that the distance to the first end 34C of the alloy region 34A to which they are disposed is 100 μm or less. Furthermore, one or more semiconductor laser elements 20 can be configured such that the distance to the second end 34D of the alloy region 34A to which they are disposed is 100 μm or less. This suppresses the width of the alloy region 34A from the first end 34C to the second end 34D, enabling miniaturization of the secondary mounting base 30. Miniaturization of the secondary mounting base 30 also contributes to miniaturization of the light-emitting device 1.

[0199] The shape of the wiring layer 33 changes before and after bonding the semiconductor laser element 20. The alloy layer 34 after bonding the semiconductor laser element 20 has, in cross-section, a protrusion 36 with a convex curved surface shape extending from between the semiconductor laser element 20 and the metal layer 32B1. The protrusion 36 is formed in cross-section on both the protrusion disposed between the first end 34C and the semiconductor laser element 20 (hereinafter referred to as the first protrusion) and the protrusion disposed between the second end 34D and the semiconductor laser element 20 (hereinafter referred to as the second protrusion).

[0200] Figures 21A to 21D This is an image showing the state in which the semiconductor laser element 20 is attached to the secondary mounting base 30 in the embodiment. Figures 22A to 22D This is an image showing the state in which the semiconductor laser element 20 is attached to the secondary mounting base in the comparative example.

[0201] Compare Figure 21B and Figure 21D In the secondary mounting base 30 of the embodiment, the maximum thickness of the protrusion 36 of the first protruding portion is greater than the maximum thickness of the protrusion 36 of the second protruding portion. On the other hand, comparing... Figure 22B and Figure 22DThe maximum thickness of the protrusion 36 in the first protruding portion is less than the maximum thickness of the protrusion 36 in the second protruding portion.

[0202] This is believed to be because, in the comparative example of the secondary mounting base, due to the short melting time, the hardening of the alloy layer begins from the second end. In the hardened state, the molten alloy layer overflows from the flat area and is covered, thus increasing the maximum thickness of the second overflow portion. On the other hand, in the secondary mounting base of the embodiment, the semiconductor laser element 20 is bonded while both the first and second ends are maintained in a molten state. Therefore, it is believed that the larger maximum thickness at the first end before the bonding process is also reflected after the bonding process. That is, in a secondary mounting base where a thin-layer region is formed only on one side at each end, if it is a secondary mounting base that achieves a stable bonding state, the maximum thickness of the first protruding portion can be greater than the maximum thickness of the second protruding portion after the bonding process. Furthermore, the maximum thickness of the protrusion 36 of the first protruding portion can become the maximum thickness of the first protruding portion. Similarly, the maximum thickness of the protrusion 36 of the second protruding portion can become the maximum thickness of the second protruding portion.

[0203] In the alloy layer 34 after bonding treatment, the difference between the maximum thickness of the first protruding portion and the maximum thickness of the second protruding portion can be 0.8 μm or more. Alternatively, the difference can be 1.5 μm or more. By adjusting the thickness in the design, the amount of alloy in the alloy layer 34 is greater than in the comparative example, thus easily producing a relatively large height difference.

[0204] Figure 23A and Figure 23B To investigate the bonding state of a semiconductor laser element bonded to a secondary mounting base after heating it in an oven at 320°C for a specified time, images of the bonding surface of the semiconductor laser element were obtained by heating it to approximately 300°C after bonding and then peeling it off from the secondary mounting base using a jig. Figures 24A to 24D The images show the same confirmation performed using the secondary mounting base component as a comparative example. Furthermore, in each image, two semiconductor laser elements (two experimental samples) are arranged.

[0205] from Figures 24A to 24D It can be seen that in the semiconductor laser element bonded to the secondary mounting base of the comparative example, polarization in a eutectic state is generated at the bonding surface. Furthermore, the polarized portions are indicated by arrows labeled A and B, respectively. Figure 24A The time required from the start of heating to the configuration of the semiconductor laser element is set to 2.0 seconds. Figure 24B Set the required time to 3.5 seconds. Figure 24C Set the required time to 6.0 seconds. Figure 24DThe required time is set to 8.0 seconds, but polarization of the eutectic state occurs in either case.

[0206] On the other hand, from Figure 23A and Figure 23B It can be seen that in the semiconductor laser element bonded to the secondary mounting base of the embodiment, no eutectic polarization is generated at the bonding surface. Furthermore, Figure 23A The time required from the start of heating to the configuration of the semiconductor laser element is set to 6 seconds. Figure 23B The required time was set to 8 seconds, but polarization of the eutectic state was not produced in either case.

[0207] In the light-emitting device 1, when the semiconductor laser element 20, which is bonded to the secondary mounting base 30, is peeled off from the secondary mounting base 30 using a clamp, the eutectic state of the alloy at the bonding surface of the semiconductor laser element 20 does not undergo polarization. This confirmation of whether or not polarization occurs can serve as a method to verify that the secondary mounting base achieves a stable bonding state, and that the light-emitting device bonds the semiconductor laser element to the secondary mounting base in a stable state. Furthermore, it is not necessarily necessary to determine the stable bonding state based on the state of the bonding surface of the components (such as the semiconductor laser element) peeled off from the secondary mounting base.

[0208] Whether a connection can be considered stable depends on the application and operating environment. Where there are corresponding verification methods, other verification methods can also be used. In this case, even if polarization occurs in the aforementioned verification method, it may still be determined as a stable connection using other verification methods. Furthermore, in the aforementioned verification of the presence or absence of polarization, there may be applications where a stable connection cannot be confirmed, but at least it can be said that the connection is more stable than when polarization occurs. If the wiring layer 33 has a thinned region formed only on one side at both ends, and the verification of the presence or absence of polarization confirms that no polarization has occurred, then it can be said that the secondary mounting base achieves a stable connection.

[0209] One or more semiconductor laser elements 20 are disposed within the internal space of the package 10. One or more semiconductor laser elements 20 are disposed on the substrate 11. One or more semiconductor laser elements 20 are disposed on the first upper surface 11A via a secondary mounting base 30.

[0210] In the light-emitting device 1, one or more semiconductor laser elements 20 may be composed of a plurality of semiconductor laser elements arranged in one direction. Here, the direction in which the plurality of semiconductor laser elements are arranged is referred to as the first direction.

[0211] One or more secondary mounting bases 30 may be composed of multiple secondary mounting bases arranged in one direction. Multiple semiconductor laser elements 20 are respectively disposed on any one of the secondary mounting bases 30. The direction in which the multiple secondary mounting bases 30 are arranged is the same as the direction in which the multiple semiconductor laser elements 20 are arranged. Therefore, the direction in which the multiple secondary mounting bases 30 are arranged can also be referred to as the first direction. In the illustrated light-emitting device 1, one semiconductor laser element 20 is disposed on one secondary mounting base 30.

[0212] Multiple sub-mounts 30 are arranged such that, when viewed from above, the first side 31A1 of one of two adjacent sub-mounts 30 faces the second side 31A2 of the other sub-mount 30. The secondary mounting base 30 brings the wiring layers 33 in the first side 31A1 and the second side 31A2 close to one side, thus enabling more semiconductor laser elements 20 to be arranged on the first upper surface 11A.

[0213] The spacing between adjacent secondary mounting bases 30 can be 300 μm or less. This allows for a spacing of 1000 μm or less between adjacent semiconductor laser elements 20. Consequently, a greater number of semiconductor laser elements can be arranged in a configuration.

[0214] One or more semiconductor laser elements 20 emit light in a predetermined direction. This predetermined direction is referred to as the second direction. Multiple semiconductor laser elements 20 emit light in the same direction. Multiple semiconductor laser elements 20 emit light in a direction perpendicular to the first direction. In the illustrated light-emitting device 1, light is emitted from one or more semiconductor laser elements 20 in the Y direction.

[0215] In the light-emitting device 1, one or more reflective elements 40 are disposed within the internal space of the package 10. One or more reflective elements 40 are disposed on the substrate 11. One or more reflective elements 40 are disposed at a position away from one or more semiconductor laser elements 20 in a second direction.

[0216] One or more reflective elements 40 reflect light emitted from one or more semiconductor laser elements 20. The light emitted from the one or more semiconductor laser elements 20 is emitted upward from the upper surface 14A of the package 10. The light is reflected upward by the light-reflecting surface 41B of one or more reflective elements 40.

[0217] In the light-emitting device 1, one or more protective elements 50 are disposed within the internal space of the package 10. One or more protective elements 50 are engaged with the package 10. One or more protective elements 50 are engaged with the frame portion 11N. One or more protective elements 50 are disposed on the upper surface 11G. By not disposing of the protective elements 50 on the secondary mounting base 30, the secondary mounting base 30 can be miniaturized.

[0218] The light-emitting device 1 has multiple wirings 60 for electrically connecting one or more semiconductor laser elements 20 to the package 10. The multiple wirings 60 include one or more first wirings 60A that are engaged with the secondary mounting base 30.

[0219] One or more first wirings 60A are coupled at one end to one of the two adjacent secondary mounting bases 30, and at the other end to a semiconductor laser element 20 disposed on another secondary mounting base 30. In top view, one or more first wirings 60A are coupled at one end to a secondary mounting base 30 between a second end 34D and a second side 31A2. This reduces the length of the first wirings 60A, contributing to a reduction in wiring resistance.

[0220] One or more semiconductor laser elements 20 are capable of emitting light with a peak wavelength of 605 nm or higher. The one or more semiconductor laser elements 20 may comprise InAlGaP, GaInP, or GaAs-based semiconductors such as GaAs and AlGaAs. Preferably, such semiconductor laser elements 20 have relatively low temperature characteristics, and are constructed to avoid becoming high-temperature devices. In this relationship with the semiconductor laser elements 20, achieving a stable connection also helps improve heat dissipation and can positively impact the output characteristics of the semiconductor laser elements 20. That is, by achieving a stable connection, the output characteristics of the light-emitting device 1 can be improved.

[0221] In the light-emitting device 1, the optical component 70 is bonded to the package 10. The optical component 70 is bonded to the upper surface 14A. Light emitted from the package 10 enters the optical working surface 71D of the optical component 70. The light that has been given an optical function is emitted from the optical component 70. The light emitted from the optical component 70 can become the light emitted from the light-emitting device 1.

[0222] In the illustrated light-emitting device 1, the non-lens portion 72B of the optical component 70 is bonded to the package 10 via an adhesive. Light emitted from the package 10 passes through the lens portion 72A without passing through the adhesive. Light entering the optical component 70 passes through one or more lens surfaces 71D, becomes collimated light, and is emitted from the optical component 70.

[0223] The embodiments of the present invention have been described above. However, the secondary mounting base and light-emitting device of the present invention are not strictly limited to the secondary mounting base and light-emitting device of the embodiments. That is, the present invention cannot be realized as long as it is not limited to the shape and structure of the secondary mounting base and light-emitting device disclosed in the embodiments. The present invention does not necessarily have to have all the constituent elements to be applied. For example, if a part of the constituent elements of the light-emitting device disclosed in the embodiments is not described in the claims, the freedom of design for that part of the constituent elements, such as substitution, omission, shape modification, and material change, is recognized, and the invention described in the claims is specifically applied on this basis.

[0224] Industrial availability

[0225] Based on the foregoing description in this specification, the following technical matters are disclosed.

[0226] (Item 1)

[0227] A secondary mounting base,

[0228] It has an upper surface and a lower surface.

[0229] And it includes: a substrate;

[0230] A metal layer is disposed on the upper surface side of the substrate;

[0231] An alloy layer is disposed on top of the metal layer.

[0232] The upper surface has a first side that forms part of the outer edge when viewed from above, and a second side that is the opposite side of the first side.

[0233] The alloy layer forms at least one continuous alloy region when viewed from above.

[0234] The alloy region is disposed in at least a portion of the region where the distance from the first side is less than 100 μm, and in a portion of the region where the distance from the first side is more than 100 μm. It is not disposed in the region within 100 μm of a line segment extending at least 20% of the total length of the second side.

[0235] In a cross-section through the first side, the second side, and the alloy region, where the alloy region is not present within 100 μm from the second side, the thickness of the alloy layer near the end of the first side, i.e., the first end, is greater than the thickness of the alloy layer near the end opposite to the first end, i.e., the second end, and the thickness of the alloy layer near the second end is 1.5 μm or more.

[0236] (Item 2)

[0237] According to the secondary mounting base described in item 1

[0238] The alloy region, in the cross-section, has a thinning region on the second end side that decreases in thickness as it approaches the second end, and no region that decreases in thickness as it approaches the first end is formed on the first end side, which can be said to be the same as the thinning region formed on the second end side.

[0239] (Item 3)

[0240] According to the secondary mounting base described in item 2

[0241] The difference between the maximum and minimum thickness in the thinned region is greater than 0.7 μm.

[0242] (Item 4)

[0243] According to any one of items 1 to 3, the secondary mounting base,

[0244] The maximum thickness of the alloy layer is less than 3.5 μm.

[0245] (Item 5)

[0246] According to any one of items 1 to 4, the secondary mounting base

[0247] In the cross-section, the alloy layer has a thickened region on the second end side, between the thinned region and the second end, with a thickness greater than the minimum thickness of the thinned region.

[0248] (Item 6)

[0249] According to any one of items 1 to 5, the secondary mounting base,

[0250] The alloy layer is an AuSn alloy layer.

[0251] (Item 7)

[0252] A method for manufacturing a light-emitting device, comprising disposing a semiconductor laser element on the alloy layer of a secondary mounting base in a molten state according to any one of claims 1 to 6, and bonding the semiconductor laser element to the secondary mounting base.

[0253] (Item 8)

[0254] A light-emitting device, comprising:

[0255] One or more secondary mounting bases having an upper surface and a lower surface;

[0256] One or more semiconductor laser elements are coupled to the secondary mounting base;

[0257] The base, on which one or more secondary mounting bases are mounted,

[0258] The secondary mounting base includes: a substrate; a metal layer disposed on the substrate; and an alloy layer disposed on the metal layer.

[0259] The upper surface has a first side that forms part of the outer edge when viewed from above, and a second side that is the opposite side of the first side.

[0260] The alloy layer forms at least one continuous alloy region when viewed from above.

[0261] The alloy region is disposed in at least a portion of the region where the distance from the first side is less than 100 μm, and in a portion of the region where the distance from the first side is more than 100 μm. It is not disposed in the region within 100 μm of a line segment extending at least 20% of the total length of the second side.

[0262] The semiconductor laser element is disposed in the alloy region and bonded to the secondary mounting base via the alloy layer.

[0263] In a cross-section through the first side and the second side, and in a cross-section within 100 μm from the second side where no alloy region is provided, the maximum thickness of the first protruding portion in the alloy layer is greater than the maximum thickness of the second protruding portion. The first protruding portion is disposed between the end on the first side, i.e., the first end, and the semiconductor laser element, and the second protruding portion is disposed between the end on the opposite side to the first end, i.e., the second end, and the semiconductor laser element.

[0264] (Item 9)

[0265] According to the light-emitting device described in item 8

[0266] The difference between the maximum thickness of the first protruding portion and the maximum thickness of the second protruding portion is greater than 0.8 μm.

[0267] (Item 10)

[0268] The light-emitting device according to item 8 or 9

[0269] For the light-emitting device, when the semiconductor laser element, which is bonded to the secondary mounting base, is heated to about 300°C and peeled off from the secondary mounting base by a clamp, the eutectic state of the alloy at the bonding surface of the semiconductor laser element does not undergo polarization.

[0270] (Item 11)

[0271] The light-emitting device according to any one of items 8 to 10,

[0272] The one or more secondary mounting bases are composed of a plurality of secondary mounting bases arranged in a first direction.

[0273] The one or more semiconductor laser elements are each composed of a plurality of semiconductor laser elements disposed on any of the said secondary mounting bases.

[0274] The plurality of secondary mounting bases are arranged such that, when viewed from above, the first side of one of two adjacent secondary mounting bases is opposite to the second side of the other secondary mounting base.

[0275] The plurality of semiconductor laser elements emit light in a direction perpendicular to the first direction.

[0276] (Item 12)

[0277] The light-emitting device according to any one of items 8 to 11,

[0278] The alloy layer is an AuSn alloy layer.

[0279] The secondary mounting base and light-emitting device described in the embodiments can be used in projectors. That is, a projector can be considered one application of the present invention. Furthermore, the present invention is not limited thereto and can be used in various applications such as projectors, lighting, exposure, automotive headlights, head-mounted displays, and backlights for other displays.

[0280] Explanation of reference numerals in the attached figures

[0281] 1: Light-emitting device

[0282] 10: Packaging

[0283] 11: Matrix

[0284] 11A: First upper surface

[0285] 11B: Lower surface

[0286] 11C: Second upper surface

[0287] 11D: Outer surface

[0288] 11E: Inner surface

[0289] 11F: Staircase

[0290] 11F1: First step

[0291] 11F2: Second Step

[0292] 11G: Upper surface

[0293] 11H: Side view

[0294] 11M: Base

[0295] 11N: Frame

[0296] 12A: Wiring section

[0297] 12A1: First wiring section

[0298] 12A2: Second wiring section

[0299] 13A: Joining pattern

[0300] 14: Cover

[0301] 14A: Upper surface

[0302] 14B: Lower surface

[0303] 14C: Side view

[0304] 20: Semiconductor laser components

[0305] 21A: Upper surface

[0306] 21B: Lower surface

[0307] 21C: Side view

[0308] 22: Light exit surface

[0309] 30: Secondary mounting base

[0310] 31A: Upper surface

[0311] 31A1: First side

[0312] 31A2: Second side

[0313] 31A3: Third side

[0314] 31A4: Fourth side

[0315] 31B: Lower surface

[0316] 31C: Side view

[0317] 32A: Substrate

[0318] 32B: Upper metal component

[0319] 32B1: Metal layer

[0320] 32C: Lower metal component

[0321] 33: Wiring layer

[0322] 34: Alloy layer

[0323] 34A: Alloy Region

[0324] 34B1: Thinned region

[0325] 34B2: Flat area

[0326] 34B3: Thickened region

[0327] 34C: First end

[0328] 34D: Second end

[0329] 36: convex part

[0330] 40: Reflective component

[0331] 41A: Lower surface

[0332] 41B: Light reflecting surface

[0333] 50: Protective components

[0334] 60: Wiring

[0335] 60A: First wiring

[0336] 70: Optical components (lens components)

[0337] 71A: Upper surface

[0338] 71B: Lower surface

[0339] 71C: Side View

[0340] 71D: Lens surface (optical working surface)

[0341] 72A: Lens section

[0342] 72B: Non-lens section

Claims

1. A secondary mounting base, characterized in that, It has an upper surface and a lower surface. And it includes: a substrate; A metal layer is disposed on the upper surface side of the substrate; An alloy layer is disposed on top of the metal layer. The upper surface has a first side that forms part of the outer edge when viewed from above, and a second side that is the opposite side of the first side. The alloy layer forms at least one continuous alloy region when viewed from above. The alloy region is disposed in at least a portion of the region where the distance from the first side is less than 100 μm, and in a portion of the region where the distance from the first side is more than 100 μm. It is not disposed in the region within 100 μm of a line segment extending at least 20% of the total length of the second side. In a cross-section through the first side, the second side, and the alloy region, where the alloy region is not present within 100 μm from the second side, the thickness of the alloy layer near the end of the first side, i.e., the first end, is greater than the thickness of the alloy layer near the end opposite to the first end, i.e., the second end, and the thickness of the alloy layer near the second end is 1.5 μm or more.

2. The secondary mounting base according to claim 1, characterized in that, The alloy region, in the cross-section, has a thinning region on the second end side that decreases in thickness as it approaches the second end, and no region that decreases in thickness as it approaches the first end is formed on the first end side, which can be said to be the same as the thinning region formed on the second end side.

3. The secondary mounting base according to claim 2, characterized in that, The difference between the maximum and minimum thickness in the thinned region is greater than 0.7 μm.

4. The secondary mounting base according to any one of claims 1 to 3, characterized in that, The maximum thickness of the alloy layer is less than 3.5 μm.

5. The secondary mounting base according to any one of claims 1 to 4, characterized in that, In the cross-section, the alloy layer has a thickened region on the second end side, between the thinned region and the second end, with a thickness greater than the minimum thickness of the thinned region.

6. The secondary mounting base according to any one of claims 1 to 5, characterized in that, The alloy layer is an AuSn alloy layer.

7. A method for manufacturing a light-emitting device, comprising the steps of: A semiconductor laser element is disposed on the alloy layer of the secondary mounting base in a molten state according to any one of claims 1 to 6, and the semiconductor laser element is bonded to the secondary mounting base.

8. A light-emitting device, characterized in that, have: One or more secondary mounting bases having an upper surface and a lower surface; One or more semiconductor laser elements are coupled to the secondary mounting base; The base, on which one or more secondary mounting bases are mounted, The secondary mounting base includes: a substrate; a metal layer disposed on the substrate; and an alloy layer disposed on the metal layer. The upper surface has a first side that forms part of the outer edge when viewed from above, and a second side that is the opposite side of the first side. The alloy layer forms at least one continuous alloy region when viewed from above. The alloy region is disposed in at least a portion of the region where the distance from the first side is less than 100 μm, and in a portion of the region where the distance from the first side is more than 100 μm. It is not disposed in the region within 100 μm of a line segment extending at least 20% of the total length of the second side. The semiconductor laser element is disposed in the alloy region and bonded to the secondary mounting base via the alloy layer. In a cross-section through the first side and the second side, and in a cross-section within 100 μm from the second side where no alloy region is provided, the maximum thickness of the first protruding portion in the alloy layer is greater than the maximum thickness of the second protruding portion. The first protruding portion is disposed between the end on the first side, i.e., the first end, and the semiconductor laser element, and the second protruding portion is disposed between the end on the opposite side to the first end, i.e., the second end, and the semiconductor laser element.

9. The light-emitting device according to claim 8, characterized in that, The difference between the maximum thickness of the first protruding portion and the maximum thickness of the second protruding portion is greater than 0.8 μm.

10. The light-emitting device according to claim 8 or 9, characterized in that, For the light-emitting device, when the semiconductor laser element, which is bonded to the secondary mounting base, is heated to about 300°C and peeled off from the secondary mounting base by a clamp, the eutectic state of the alloy at the bonding surface of the semiconductor laser element does not undergo polarization.

11. The light-emitting device according to any one of claims 8 to 10, characterized in that, The one or more secondary mounting bases are composed of a plurality of secondary mounting bases arranged in a first direction. The one or more semiconductor laser elements are each composed of a plurality of semiconductor laser elements disposed on any of the said secondary mounting bases. The plurality of secondary mounting bases are arranged such that, when viewed from above, the first side of one of two adjacent secondary mounting bases is opposite to the second side of the other secondary mounting base. The plurality of semiconductor laser elements emit light in a direction perpendicular to the first direction.

12. The light-emitting device according to any one of claims 8 to 11, characterized in that, The alloy layer is an AuSn alloy layer.

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