A power module and an inverter

Abstract

This application relates to the field of power module technology, and in particular to a power module and inverter. The power module includes an insulating substrate, a first positive electrode layer, a second positive electrode layer, a negative electrode layer, an AC electrode layer, multiple upper bridge arm switches, and multiple lower bridge arm switches. The connection point between the upper bridge arm switches in the first chip mounting area and the AC electrode layer is closer to the connection point between the upper bridge arm switches in the second chip mounting area and the AC electrode layer. The connection point between the lower bridge arm switches in the third chip mounting area and the negative electrode layer is closer to the connection point between the lower bridge arm switches in the fourth chip mounting area and the negative electrode layer. Simultaneously, the multiple upper bridge arm switches are electrically connected to the entire copper layer of the AC electrode layer, and the multiple lower bridge arm switches are electrically connected to the entire copper layer of the negative electrode layer. Overall, this effectively reduces the interconnection inductance between the parallel switches. The symmetrical layout effectively improves the current sharing performance of the power module.

Description

Technical Field

[0001] This application relates to the field of power module technology, and in particular to a power module and inverter. Background Technology

[0002] To achieve high output power, multiple chips need to be connected in parallel within the power module.

[0003] The existing three-phase full-bridge power module includes a first substrate, a second substrate, a third substrate, multiple lower-bridge chips, multiple upper-bridge chips, a positive DC terminal, two negative DC terminals, and an AC output terminal. A first conductive layer is disposed in the center of one side of the first substrate, and a second and third conductive layers are disposed on opposite sides. The second substrate is fixed to one end of the first conductive layer, and a sixth conductive layer is disposed in the center of the side away from the first substrate, with a seventh conductive layer disposed circumferentially along its edge. The third substrate is fixed to the other end of the first conductive layer, and an eighth conductive layer is disposed in the center of the side away from the first substrate, with a ninth conductive layer disposed circumferentially along its edge. Multiple lower-bridge chips are evenly distributed on opposite sides of the second substrate, with their drains electrically connected to the corresponding second conductive layer. Multiple upper-bridge chips are evenly distributed on opposite sides of the third substrate, with their drains electrically connected to the first conductive layer. The sources of the lower-bridge chips on both sides are electrically connected to the corresponding third conductive layer through corresponding first current sharing plates. The lower-bridge chips on both sides are connected to the sixth and seventh conductive layers through bonding wires. The sources of the upper bridge chips on both sides are electrically connected to the corresponding second conductive layers via the corresponding second current sharing plates. The upper bridge chips on both sides are electrically connected to the eighth and ninth conductive layers via bonding wires. The positive DC terminal is fixedly connected to the first conductive layer. The two negative DC terminals are fixedly connected to the corresponding third conductive layers. The AC output terminals are fixedly connected to the second conductive layers on both sides.

[0004] The existing technical solutions mentioned above have the following drawbacks: For existing power modules, the interconnection inductance between parallel chips is relatively large, which easily leads to short-circuit oscillation. Summary of the Invention

[0005] To further reduce the interconnect inductance of parallel chips, this application provides a power module and an inverter.

[0006] The primary objective of this application is to provide a power module, employing the following technical solution: A power module, comprising: Insulating substrate; The first positive electrode layer is formed on one side of the top surface of the insulating substrate; The second positive electrode layer is formed on the other side of the top surface of the insulating substrate and is symmetrical with respect to the first positive electrode layer about the central axis of the insulating substrate. A negative electrode layer is formed in the middle of the top surface of the insulating substrate and disposed near one end of the insulating substrate; An AC electrode layer is formed in the middle of the top surface of an insulating substrate and disposed near the other end of the insulating substrate; a first chip mounting area is disposed at the end of a first positive electrode layer near the AC electrode layer; a second chip mounting area is disposed at the end of a second positive electrode layer near the AC electrode layer; a third chip mounting area and a fourth chip mounting area are disposed at the end of an AC electrode layer near the negative electrode layer; the third chip mounting area is located between the negative electrode layer and the first positive electrode layer; the fourth chip mounting area is located between the negative electrode layer and the second positive electrode layer. There are multiple upper bridge arm switching transistors; at least one upper bridge arm switching transistor is fixed to the first chip mounting area, and at least one upper bridge arm switching transistor is fixed to the second chip mounting area; the multiple upper bridge arm switching transistors are electrically connected to the AC electrode layer respectively. There are multiple lower bridge arm switching transistors; at least one lower bridge arm switching transistor is fixed to the third chip mounting area, and at least one lower bridge arm switching transistor is fixed to the fourth chip mounting area; the multiple lower bridge arm switching transistors are electrically connected to the negative electrode layer respectively.

[0007] By adopting the above technical solution, the upper bridge arm switching transistors on both sides are symmetrical about the central axis of the insulating substrate, improving the current sharing performance between the upper bridge arm switching transistors and reducing the possibility of short-circuit oscillation. Similarly, the lower bridge arm switching transistors on both sides are symmetrical about the central axis of the insulating substrate, further improving the current sharing performance between the upper bridge arm switching transistors and reducing the possibility of short-circuit oscillation. Power connectors and signal connectors are distributed in different layers vertically, reserving sufficient space for the layout of power connectors, allowing for a wider width for each power connector. The connection point between the upper bridge arm switching transistor in the first chip mounting area and the AC electrode layer is closer to the connection point between the upper bridge arm switching transistor in the second chip mounting area and the AC electrode layer. The connection point between the lower bridge arm switching transistor in the third chip mounting area and the negative electrode layer is closer to the connection point between the lower bridge arm switching transistor in the fourth chip mounting area and the negative electrode layer. Simultaneously, multiple upper bridge arm switching transistors are electrically connected to the entire copper layer of the AC electrode layer, and multiple lower bridge arm switching transistors are electrically connected to the entire copper layer of the negative electrode layer. Overall, compared to existing three-phase full-bridge power modules, this design effectively reduces the interconnect inductance between parallel switches, thereby significantly reducing the risk of short-circuit oscillations in the power module. The symmetrical layout effectively improves the current sharing performance of the power module, further reducing the likelihood of short-circuit oscillations and enhancing the reliability of the power module.

[0008] This application further specifies that: the AC electrode layer is provided with a first signal carrying area; the negative electrode layer is provided with a second signal carrying area; Also includes: The first signal electrode layer is located above the central axis of the first signal mounting area and is electrically insulated from the AC electrode layer, and is electrically connected to each upper bridge arm switch tube respectively. The second signal electrode layer is located above the central axis of the second signal mounting area and is electrically insulated from the negative electrode layer. It is electrically connected to each lower bridge arm switch tube.

[0009] This application further specifies that: each upper bridge arm switch transistor is provided with a first output terminal and a first control terminal; each lower bridge arm switch transistor is provided with a second output terminal and a second control terminal; Also includes: The first power connectors are multiple, with one end fixedly connected to the first output terminal of each of the multiple upper bridge arm switching transistors, and the other end fixedly connected to the AC electrode layer respectively; the first power connectors located on opposite sides are symmetrical about the central axis of the insulating substrate. There are multiple second power connectors, one end of which is fixedly connected to the second output terminal of each of the multiple lower bridge arm switching transistors, and the other end is fixedly connected to the negative electrode layer respectively; the second power connectors located on opposite sides are symmetrical about the central axis of the insulating substrate. The first signal connectors are multiple, with one end fixedly connected to the first control terminal of each of the multiple upper bridge arm switching transistors, and the other end fixedly connected to the first signal electrode layer respectively; the first signal connectors located on opposite sides are symmetrical about the central axis of the insulating substrate. There are multiple second signal connectors. One end of each connector is fixedly connected to the second control terminal of a plurality of lower bridge arm switching transistors, and the other end is fixedly connected to the second signal electrode layer. The second signal connectors located on opposite sides are symmetrical about the central axis of the insulating substrate.

[0010] By adopting the above technical solution, each first power connector electrically connects the corresponding upper bridge arm switch to the entire copper layer of the AC electrode layer; each second power connector electrically connects the corresponding lower bridge arm switch to the entire copper layer of the negative electrode layer; each first signal connector electrically connects the corresponding upper bridge arm switch to the first signal electrode layer; and each second signal connector electrically connects the corresponding lower bridge arm switch to the second signal electrode layer. The connection points between each pair of adjacent first / second power connectors and their corresponding upper / lower bridge arm switches are closer; the connection points between each pair of adjacent first / second power connectors and their corresponding AC / negative electrode layers are closer; the lengths of each pair of adjacent first / second power connectors are consistent; and the width of each first / second power connector is wider. This effectively reduces the interconnection inductance between parallel switches, thereby effectively reducing the risk of short-circuit oscillation in the power module. The symmetrical layout effectively improves the current sharing performance of the power module, further reducing the possibility of short-circuit oscillation.

[0011] This application further specifies that: the connection point of the first power connector away from the negative electrode layer and the AC electrode layer is located close to the negative electrode layer, and the length difference between the corresponding first power connector and the adjacent first power connector is 0-4mm.

[0012] By adopting the above technical solution, the current sharing performance between switching transistors can be further improved, and the risk of short-circuit oscillation can be reduced.

[0013] This application further specifies that: the connection point between the second power connector, which is far from the AC electrode layer, and the negative electrode layer is located far from the AC electrode layer, and the length difference between the corresponding second power connector and the adjacent second power connector is 0-4mm.

[0014] By adopting the above technical solution, the current sharing performance between switching transistors can be further improved, and the risk of short-circuit oscillation can be reduced.

[0015] This application further includes: The interconnect electrode layer is located above the central axis of the first signal mounting area and is electrically insulated from the first signal electrode layer and the AC electrode layer, respectively. The first interconnect has one end fixedly connected to the first positive electrode layer and the other end fixedly connected to the interconnect electrode layer; The second interconnect has one end fixedly connected to the second positive electrode layer and the other end fixedly connected to the interconnect electrode layer, and is symmetrical to the first interconnect about the central axis of the insulating substrate.

[0016] By adopting the above technical solution, the second positive electrode layer and the first positive electrode layer are symmetrical about the central axis of the insulating substrate, achieving physical isolation and avoiding mutual interference between the supply voltages of the upper bridge arm switches on both sides. This ensures that the current paths of the upper bridge arm switches on both sides are independent and stable. The first interconnect and the second interconnect enable the second positive electrode layer to interconnect with the first positive electrode layer, thereby balancing the voltage and current of the upper bridge arm switches on both sides, reducing drain inductance, and improving steady-state current sharing performance.

[0017] This application further specifies that: the first signal mounting area is provided with a first island; the two opposite sides of the first island are symmetrical about the central axis of the insulating plate; the second signal mounting area is provided with a second island; the two opposite sides of the second island are symmetrical about the central axis of the insulating plate.

[0018] By adopting the above technical solution, the impedance difference between the drain and source terminals of each parallel switch can be effectively balanced, thereby improving the current sharing performance between chips.

[0019] This application further specifies that: the first signal carrying area is provided with multiple third islands; and the second signal carrying area is provided with multiple fourth islands.

[0020] By adopting the above technical solutions, multiple third islands and multiple fourth islands avoid excessive local stress on the substrate, thereby improving the reliability of the power module.

[0021] This application further includes: The negative terminal is located on the top of the insulating substrate, with one end fixedly connected to the negative electrode layer and the other end suitable for connection to the negative terminal of the power supply. The positive terminal is located above the negative terminal, with one end fixedly connected to the first positive electrode layer and the other end fixedly connected to the second positive electrode layer, and the middle part is suitable for connection to the positive terminal of the power supply. The AC terminal is located on the top of the insulating substrate. One end is fixedly connected to the AC electrode layer, and the other end is suitable for connecting to electrical equipment.

[0022] The second objective of this application is to provide an inverter that adopts the following technical solution: An inverter, comprising a power module.

[0023] In summary, the beneficial technical effects of this application are as follows: 1. The upper bridge arm switches on both sides are symmetrical about the central axis of the insulating substrate, improving current sharing performance among the upper bridge arm switches and reducing the possibility of short-circuit oscillation. Similarly, the lower bridge arm switches on both sides are symmetrical about the central axis of the insulating substrate, further improving current sharing performance and reducing the possibility of short-circuit oscillation. The connection point between the upper bridge arm switch in the first chip mounting area and the AC electrode layer is closer to the connection point between the upper bridge arm switch in the second chip mounting area and the AC electrode layer. The connection point between the lower bridge arm switch in the third chip mounting area and the negative electrode layer is closer to the connection point between the lower bridge arm switch in the fourth chip mounting area and the negative electrode layer. Simultaneously, multiple upper bridge arm switches are electrically connected to the entire copper layer of the AC electrode layer, and multiple lower bridge arm switches are electrically connected to the entire copper layer of the negative electrode layer. Overall, compared to existing three-phase full-bridge power modules, this design effectively reduces the interconnect inductance between parallel switches, thereby effectively reducing the risk of short-circuit oscillation in the power module. The symmetrical layout effectively improves the current sharing performance of the power module, further reduces the possibility of short-circuit oscillation, and enhances the reliability of the power module.

[0024] 2. Each first power connector electrically connects the corresponding upper bridge arm switch to the entire copper layer of the AC electrode layer; each second power connector electrically connects the corresponding lower bridge arm switch to the entire copper layer of the negative electrode layer; each first signal connector electrically connects the corresponding upper bridge arm switch to the first signal electrode layer; and each second signal connector electrically connects the corresponding lower bridge arm switch to the second signal electrode layer. The connection points between adjacent first / second power connectors and their corresponding upper / lower bridge arm switches are closer together; the connection points between adjacent first / second power connectors and the AC / negative electrode layers are closer together; the lengths of adjacent first / second power connectors are consistent; and the width of each first / second power connector is wider. This effectively reduces the interconnection inductance between parallel switches, thereby effectively reducing the risk of short-circuit oscillation in the power module. The symmetrical layout effectively improves the current sharing performance of the power module, further reducing the possibility of short-circuit oscillation.

[0025] 3. The connection point of the first power connector, which is furthest from the negative electrode layer, to the AC electrode layer is positioned close to the negative electrode layer. The connection point of the second power connector, which is furthest from the AC electrode layer, to the negative electrode layer is positioned far from the AC electrode layer. This further improves the current sharing performance between the switching transistors and reduces the risk of short-circuit oscillation.

[0026] 4. The second positive electrode layer and the first positive electrode layer are symmetrical about the central axis of the insulating substrate, achieving physical isolation and preventing mutual interference between the supply voltages of the upper bridge arm switches on both sides. This ensures that the current paths of the upper bridge arm switches on both sides are independent and stable. The first interconnect and the second interconnect interconnect interconnect the second positive electrode layer and the first positive electrode layer to balance the voltage and current of the upper bridge arm switches on both sides, reduce drain inductance, and improve steady-state current sharing performance.

[0027] 5. The first signal mounting area has a first island, and the two opposite sides of the first island are symmetrical about the central axis of the insulating plate. The second signal mounting area has a second island, and the two opposite sides of the second island are symmetrical about the central axis of the insulating plate. This effectively balances the impedance differences between the drain and source terminals of the parallel switching transistors, improving the current sharing performance between chips. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of an existing three-phase full-bridge power module; Figure 2 This is a schematic diagram of the structure of an embodiment of the power module of this application; Figure 3 yes Figure 2The diagram shows a combined structure of an insulating substrate, a first positive electrode layer, a second positive electrode layer, a negative electrode layer, an AC electrode layer, an upper bridge arm switch, a lower bridge arm switch, a first signal electrode layer, a second signal electrode layer, a first power connector, a second power connector, a first signal connector, a second signal connector, a first interconnect, and a second interconnect in the power module shown. Figure 4 yes Figure 2 The diagram shows the combined structure of the insulating substrate, the first positive electrode layer, the second positive electrode layer, the negative electrode layer, and the AC electrode layer in the power module shown. Figure 5 This is a schematic diagram of the structure of one embodiment of the upper bridge arm switch tube; Figure 6 This is a schematic diagram of the structure of one embodiment of the lower bridge arm switch transistor; Figure 7 yes Figure 2 The diagram shows the combined structure of the power module, including the insulating substrate, the first positive electrode layer, the second positive electrode layer, the negative electrode layer, the AC electrode layer, the upper bridge arm switch, the lower bridge arm switch, the first power connector, and the second power connector. Figure 8 yes Figure 2 The diagram shows a combined structure of an insulating substrate, a first positive electrode layer, a second positive electrode layer, a negative electrode layer, an AC electrode layer, an upper bridge arm switch, a lower bridge arm switch, a first signal electrode layer, a second signal electrode layer, a first signal connector, a second signal connector, a first interconnect, and a second interconnect in the power module shown. Figure 9 This is a schematic diagram of another embodiment of the power module of this application; Figure 10 yes Figure 9 The diagram shows a combined structure of an insulating substrate, a first positive electrode layer, a second positive electrode layer, a negative electrode layer, an AC electrode layer, an upper bridge arm switch, a lower bridge arm switch, a first signal electrode layer, a second signal electrode layer, a first power connector, a second power connector, a first signal connector, a second signal connector, a first interconnect, and a second interconnect in the power module shown. Figure 11 yes Figure 9 The diagram shows a combined structure of an insulating substrate, a first positive electrode layer, a second positive electrode layer, a negative electrode layer, an AC electrode layer, an upper bridge arm switch, a lower bridge arm switch, a first signal electrode layer, a second signal electrode layer, a first power connector, and a second power connector in the power module shown. Figure 12 This is a schematic diagram of the structure of another embodiment of the power module of this application; Figure 13 yes Figure 12The diagram shows a combined structure of an insulating substrate, a first positive electrode layer, a second positive electrode layer, a negative electrode layer, an AC electrode layer, an upper bridge arm switch, a lower bridge arm switch, a first signal electrode layer, a second signal electrode layer, a first power connector, and a second power connector in the power module shown. Figure 14 This is a schematic diagram of a combined structure of an insulating substrate, a first positive electrode layer, a second positive electrode layer, a negative electrode layer, and an AC electrode layer, according to another embodiment. Figure 15 This is a schematic diagram of a combined structure of an insulating substrate, a first positive electrode layer, a second positive electrode layer, a negative electrode layer, and an AC electrode layer, in yet another embodiment.

[0029] Reference numerals: 110, Insulating substrate; 121, First positive electrode layer; 1211, First chip mounting area; 122, Second positive electrode layer; 1221, Second chip mounting area; 123, Negative electrode layer; 1231, Second signal mounting area; 12311, Second island; 12312, Fourth island; 124, AC electrode layer; 1241, Third chip mounting area; 1242, Fourth chip mounting area; 1243, First signal mounting area; 12431, First island; 12432, Third island; 131, Upper bridge arm switch; 1311, First output terminal; 1312, First control terminal; 132, Lower bridge arm switch; 1321, Second output terminal; 1322, Second control terminal; 141, First signal electrode layer; 142, Second signal electrode layer; 143 151. Interconnect electrode layer; 152. First power connector; 161. Second power connector; 162. Second signal connector; 171. First interconnect; 172. Second interconnect; 181. Negative terminal; 182. Positive terminal; 183. AC terminal; 210. First substrate; 211. First conductive layer; 212. Second conductive layer; 213. Third conductive layer; 220. Second substrate; 221. Sixth conductive layer; 222. Seventh conductive layer; 230. Third substrate; 231. Eighth conductive layer; 232. Ninth conductive layer; 241. Lower bridge chip; 242. Upper bridge chip; 251. First current sharing plate; 252. Second current sharing plate; 271. Positive DC terminal; 272. Negative DC terminal; 273. AC output terminal. Detailed Implementation

[0030] It should be noted that, as Figure 1As shown, the existing three-phase full-bridge power module includes a first substrate 210, a second substrate 220, a third substrate 230, six lower-bridge chips 241, six upper-bridge chips 242, a positive DC terminal 271, two negative DC terminals 272, and an AC output terminal 273. A first conductive layer 211 is disposed in the middle of one side of the first substrate 210, and a second conductive layer 212 and a third conductive layer 213 are disposed on opposite sides. The second substrate 220 is fixed to one end of the first conductive layer 211, and a sixth conductive layer 221 is disposed in the middle of the side away from the first substrate 210, with a seventh conductive layer 222 disposed circumferentially along its edge. The third substrate 230 is fixed to the other end of the first conductive layer 211, and an eighth conductive layer 231 is disposed in the middle of the side away from the first substrate 210, with a ninth conductive layer 232 disposed circumferentially along its edge. The six lower-bridge chips 241 are evenly distributed on opposite sides of the second substrate 220, and their drains are electrically connected to the corresponding second conductive layer 212. Six upper-bridge chips 242 are evenly distributed on opposite sides of the third substrate 230, with their drains electrically connected to the first conductive layer 211. The sources of the lower-bridge chips 241 on both sides are electrically connected to the corresponding third conductive layer 213 via the corresponding first current sharing plates 251. The lower-bridge chips 241 on both sides are connected to the sixth conductive layer 221 and the seventh conductive layer 222 via bonding wires. The sources of the upper-bridge chips 242 on both sides are electrically connected to the corresponding second conductive layer 212 via the corresponding second current sharing plates 252, and the upper-bridge chips 242 on both sides are electrically connected to the eighth conductive layer 231 and the ninth conductive layer 232 via bonding wires. The positive DC terminal 271 is fixedly connected to the first conductive layer 211. The two negative DC terminals 272 are fixedly connected to the corresponding third conductive layer 213. The AC output terminal 273 is fixedly connected to the second conductive layers 212 on both sides. Among them, the positive DC terminal 271 is electrically connected to the positive terminal of the power supply, both negative DC terminals 272 are electrically connected to the negative terminal of the power supply, and the AC output terminal 273 is electrically connected to the electrical equipment. Figure 1 The direction of the central arrow indicates the direction of DC current flow. The interconnect inductance between the parallel chips was measured, and the results are shown in Table 1.

[0031] Table 1

[0032] The following is in conjunction with the appendix Figure 2-15 This application will be described in further detail.

[0033] Reference Figure 2 , Figure 3 and Figure 4This application discloses a power module including an insulating substrate 110, a first positive electrode layer 121, a second positive electrode layer 122, a negative electrode layer 123, an AC electrode layer 124, multiple upper bridge arm switching transistors 131, multiple lower bridge arm switching transistors 132, a first signal electrode layer 141, a second signal electrode layer 142, a negative terminal 181, a positive terminal 182, and an AC terminal 183. The first positive electrode layer 121 is formed on one side of the top surface of the insulating substrate 110. The second positive electrode layer 122 is formed on the other side of the top surface of the insulating substrate 110 and is symmetrical to the first positive electrode layer 121 about the central axis of the insulating substrate 110. The negative electrode layer 123 is formed in the middle of the top surface of the insulating substrate 110 and is disposed near one end of the insulating substrate 110. The AC electrode layer 124 is formed in the middle of the top surface of the insulating substrate 110 and is disposed near the other end of the insulating substrate 110. A first chip mounting area 1211 is provided at the end of the first positive electrode layer 121 near the AC electrode layer 124. A second chip mounting area 1221 is provided at the end of the second positive electrode layer 122 near the AC electrode layer 124. A third chip mounting area 1241 and a fourth chip mounting area 1242 are provided at the end of the AC electrode layer 124 near the negative electrode layer 123, and a first signal mounting area 1243 is provided at the end away from the negative electrode layer 123. A second signal mounting area 1231 is provided in the negative electrode layer 123. The third chip mounting area 1241 is located between the negative electrode layer 123 and the first positive electrode layer 121, and the fourth chip mounting area 1242 is located between the negative electrode layer 123 and the second positive electrode layer 122. At least one upper bridge arm switch 131 is fixed to the first chip mounting area 1211, and at least one upper bridge arm switch 131 is fixed to the second chip mounting area 1221. The upper bridge arm switching transistors 131 on both sides are symmetrical about the central axis of the insulating substrate 110, which improves the current sharing performance among the upper bridge arm switching transistors 131 and reduces the possibility of short-circuit oscillation. Multiple upper bridge arm switching transistors 131 are electrically connected to the AC electrode layer 124. At least one lower bridge arm switching transistor 132 is fixed to the third chip mounting area 1241, and at least one lower bridge arm switching transistor 132 is fixed to the fourth chip mounting area 1242. The lower bridge arm switching transistors 132 on both sides are symmetrical about the central axis of the insulating substrate 110, which improves the current sharing performance among the upper bridge arm switching transistors 131 and reduces the possibility of short-circuit oscillation. Multiple lower bridge arm switching transistors 132 are electrically connected to the negative electrode layer 123. The first signal electrode layer 141 is located above the central axis of the first signal mounting area 1243 and is electrically insulated from the AC electrode layer 124, and is electrically connected to each upper bridge arm switching transistor 131. The second signal electrode layer 142 is located above the central axis of the second signal mounting area 1231 and is electrically insulated from the negative electrode layer 123. It is electrically connected to each lower bridge arm switch transistor 132. The negative terminal 181 is disposed above the insulating substrate 110, with one end fixedly connected to the negative electrode layer 123 and the other end suitable for electrical connection to the negative terminal of the power supply.The positive terminal 182 is disposed above the negative terminal 181, with one end fixedly connected to the first positive electrode layer 121 and the other end fixedly connected to the second positive electrode layer 122, and the middle part suitable for electrical connection to the positive terminal of the power supply. The AC terminal 183 is disposed above the insulating substrate 110, with one end fixedly connected to the AC electrode layer 124 and the other end suitable for electrical connection to electrical equipment. Figure 2 The direction of the direct current flow is indicated by the central arrow. Since both the first signal electrode layer 141 and the second signal electrode layer 142 are located above the first positive electrode layer 121, the second positive electrode layer 122, the negative electrode layer 123, and the AC electrode layer 124, the power connectors and signal connectors are distributed on different layers in the vertical direction, reserving sufficient space for the layout of the power connectors, allowing each power connector to be wider. The connection point of the upper bridge arm switch 131 of the first chip mounting area 1211 with the AC electrode layer 124 is closer to the connection point of the upper bridge arm switch 131 of the second chip mounting area 1221 with the AC electrode layer 124. The connection point of the lower bridge arm switch 132 of the third chip mounting area 1241 with the negative electrode layer 123 is closer to the connection point of the lower bridge arm switch 132 of the fourth chip mounting area 1242 with the negative electrode layer 123. Meanwhile, multiple upper bridge arm switches 131 are electrically connected to the entire copper layer of the AC electrode layer 124, and multiple lower bridge arm switches 132 are electrically connected to the entire copper layer of the negative electrode layer 123. Overall, compared with existing three-phase full-bridge power modules, the interconnection inductance between parallel switches is effectively reduced, thereby effectively reducing the risk of short-circuit oscillation in the power module. The symmetrical layout effectively improves the current sharing performance of the power module, further reducing the possibility of short-circuit oscillation and enhancing the reliability of the power module.

[0034] Preferably, the insulating substrate 110 is made of ceramic, insulating adhesive, or organic insulating material, etc.

[0035] Reference Figure 5 and Figure 6 Each upper bridge arm switch 131 is provided with a first output terminal 1311 and a first control terminal 1312. Each lower bridge arm switch 132 is provided with a second output terminal 1321 and a second control terminal 1322. For example... Figure 3 As shown, the power module also includes multiple first power connectors 151, multiple second power connectors 152, multiple first signal connectors 161, and multiple second signal connectors 162. Figure 7As shown, one end of each of the plurality of first power connectors 151 is fixedly connected to the first output terminal 1311 of each of the plurality of upper bridge arm switching transistors 131, and the other end is fixedly connected to the AC electrode layer 124. The first power connectors 151 located on opposite sides are symmetrical about the central axis of the insulating substrate 110. One end of each of the plurality of second power connectors 152 is fixedly connected to the second output terminal 1321 of each of the plurality of lower bridge arm switching transistors 132, and the other end is fixedly connected to the negative electrode layer 123. The second power connectors 152 located on opposite sides are symmetrical about the central axis of the insulating substrate 110. Figure 8 As shown, one end of each of the plurality of first signal connectors 161 is fixedly connected to a first control terminal 1312 of a plurality of upper bridge arm switching transistors 131, and the other end is fixedly connected to a first signal electrode layer 141. The first signal connectors 161 located on opposite sides are symmetrical about the central axis of the insulating substrate 110. One end of each of the plurality of second signal connectors 162 is fixedly connected to a second control terminal 1322 of a plurality of lower bridge arm switching transistors 132, and the other end is fixedly connected to a second signal electrode layer 142. The second signal connectors 162 located on opposite sides are symmetrical about the central axis of the insulating substrate 110. Each first power connector 151 electrically connects the corresponding upper bridge arm switch 131 to the entire copper layer of the AC electrode layer 124; each second power connector 152 electrically connects the corresponding lower bridge arm switch 132 to the entire copper layer of the negative electrode layer 123; each first signal connector 161 electrically connects the corresponding upper bridge arm switch 131 to the first signal electrode layer 141; and each second signal connector 162 electrically connects the corresponding lower bridge arm switch 132 to the second signal electrode layer 142. The connection points of each pair of adjacent first power connectors 151 / second power connectors 152 with their corresponding upper bridge arm switches 131 / lower bridge arm switches 132 can be closer together. The connection points of each pair of adjacent first power connectors 151 / second power connectors 152 with the AC electrode layer 124 / negative electrode layer 123 can also be closer together. The lengths of each pair of adjacent first power connectors 151 / second power connectors 152 are consistent, and the width of each first power connector 151 / second power connector 152 can be wider. This effectively reduces the interconnection inductance between parallel switches, thereby effectively reducing the risk of short-circuit oscillation in the power module. The symmetrical layout effectively improves the current sharing performance of the power module, further reducing the possibility of short-circuit oscillation.

[0036] It should be noted that each first power connector 151, each second power connector 152, each first signal connector 161, and each second signal connector 162 can be multiple copper bonding wires arranged in parallel or multiple aluminum bonding wires arranged in parallel. Of course, each first power connector 151, each second power connector 152, each first signal connector 161, and each second signal connector 162 can also be a copper clip or an aluminum strip. When each first power connector 151, each second power connector 152, each first signal connector 161, and each second signal connector 162 consists of multiple copper bonding wires arranged in parallel, the structure of the power module is as follows: Figure 2 As shown. When each first power connector 151 and each second power connector 152 is a copper clip, and each first signal connector 161 and each second signal connector 162 consists of multiple parallel copper bonding wires, the structure of the power module is as follows. Figure 9 As shown, this further improves the flow sharing performance.

[0037] It should be noted that there are two, four, six, or eight upper bridge arm switch transistors 131 and lower bridge arm switch transistors 132. Correspondingly, there are two, four, six, or eight first power connectors 151, second power connectors 152, first signal connectors 161, and second signal connectors 162.

[0038] Reference Figure 2 and Figure 3 In one embodiment, there are six upper bridge arm switching transistors 131, lower bridge arm switching transistors 132, first power connectors 151, second power connectors 152, first signal connectors 161, and second signal connectors 162. Each first power connector 151, each second power connector 152, each first signal connector 161, and each second signal connector 162 consists of multiple copper bonding wires arranged in parallel. The upper bridge arm switching transistors 131 on both sides are symmetrical about the central axis of the insulating substrate 110, the lower bridge arm switching transistors 132 on both sides are symmetrical about the central axis of the insulating substrate 110, the first power connectors 151 on both sides are symmetrical about the central axis of the insulating substrate 110, the second power connectors 152 on both sides are symmetrical about the central axis of the insulating substrate 110, the first signal connectors 161 on both sides are symmetrical about the central axis of the insulating substrate 110, and the second signal connectors 162 on both sides are symmetrical about the central axis of the insulating substrate 110. The interconnection inductance between the parallel switching transistors was measured, and the results are shown in Table 2.

[0039] Table 2

[0040] As shown in Tables 1 and 2, the interconnect inductance of the power module can be reduced by more than 60% compared to the existing three-phase full-bridge power module.

[0041] Reference Figure 9 , Figure 10 and Figure 11 In one embodiment, there are four upper bridge arm switching transistors 131, four lower bridge arm switching transistors 132, four first power connectors 151 and 152, four second power connectors 152, four first signal connectors 161, and four second signal connectors 162. Each first power connector 151 and each second power connector 152 is a copper clip, and each first signal connector 161 and each second signal connector 162 consists of multiple parallel copper bonding wires. The upper bridge arm switching transistors 131 on both sides are symmetrical about the central axis of the insulating substrate 110, the lower bridge arm switching transistors 132 on both sides are symmetrical about the central axis of the insulating substrate 110, the first power connectors 151 on both sides are symmetrical about the central axis of the insulating substrate 110, and the second power connectors 152 on both sides are symmetrical about the central axis of the insulating substrate 110. This effectively improves the current sharing performance among the switching transistors and reduces the risk of short-circuit oscillation. The Kelvin source and gate connections are symmetrical about the central axis of the insulating substrate 110, which further improves the current sharing performance between the switching transistors and reduces switching losses.

[0042] Reference Figure 12 and Figure 13 In one embodiment, the connection point of the first power connector 151, which is away from the negative electrode layer 123, to the AC electrode layer 124 is located close to the negative electrode layer 123, and the length difference between the corresponding first power connector 151 and its adjacent first power connector 151 is 0-4 mm. Alternatively, the length of this first power connector 151 is greater than or equal to the lengths of other first power connectors 151, with a length difference of 0-4 mm. Similarly, the connection point of the second power connector 152, which is away from the AC electrode layer 124, to the negative electrode layer 123 is located away from the AC electrode layer 124, and the length difference between the corresponding second power connector 152 and its adjacent second power connector 152 is 0-4 mm. Or, the length of this second power connector 152 is greater than or equal to the lengths of other second power connectors 152, with a length difference of 0-4 mm. This further improves the current sharing performance between the switching transistors and reduces the risk of short-circuit oscillation.

[0043] Reference Figure 2 , Figure 9 and Figure 12In one embodiment, the power module further includes an interconnect electrode layer 143, a first interconnect 171, and a second interconnect 172. The interconnect electrode layer 143 is located above the central axis of the first signal mounting area 1243 and is electrically insulated from the first signal electrode layer 141 and the AC electrode layer 124, respectively. One end of the first interconnect 171 is fixedly connected to the first positive electrode layer 121, and the other end is fixedly connected to the interconnect electrode layer 143. One end of the second interconnect 172 is fixedly connected to the second positive electrode layer 122, and the other end is fixedly connected to the interconnect electrode layer 143, and is symmetrical to the first interconnect 171 about the central axis of the insulating substrate 110. The symmetry between the second positive electrode layer 122 and the first positive electrode layer 121 about the central axis of the insulating substrate 110 achieves physical isolation, preventing mutual interference of the supply voltages of the upper bridge arm switching transistors 131 on both sides, and ensuring that the current paths of the upper bridge arm switching transistors 131 on both sides are independent and stable. The first interconnect 171 and the second interconnect 172 interconnect the second positive electrode layer 122 with the first positive electrode layer 121 to balance the voltage and current of the upper bridge arm switching transistors 131 on both sides, reduce the drain inductance, and improve the steady-state current sharing performance.

[0044] It should be noted that the first interconnect 171 and the second interconnect 172 can be multiple copper bonding wires arranged in parallel or multiple aluminum bonding wires arranged in parallel. Of course, the first interconnect 171 and the second interconnect 172 can also be copper clips or aluminum strips.

[0045] Reference Figure 14 In one embodiment, the first signal mounting area 1243 is provided with a first island 12431. The opposite sides of the first island 12431 are symmetrical about the central axis of the insulating plate. The second signal mounting area 1231 is provided with a second island 12311. The opposite sides of the second island 12311 are symmetrical about the central axis of the insulating plate. In this way, the impedance difference between the drain and source terminals of each parallel switch is effectively balanced, improving the current sharing performance between chips.

[0046] Reference Figure 15 The first signal mounting area 1243 is provided with multiple third islands 12432. These multiple third islands 12432 are not symmetrical about the central axis of the insulating plate. The second signal mounting area 1231 is provided with multiple fourth islands 12312. These multiple fourth islands 12312 are not symmetrical about the central axis of the insulating plate. The multiple third islands 12432 and multiple fourth islands 12312 avoid excessive local stress on the substrate, thus improving the reliability of the power module.

[0047] This application discloses an inverter that includes the power module described above.

[0048] The implementation principle of this embodiment is as follows: the upper bridge arm switching transistors 131 on both sides are symmetrical about the central axis of the insulating substrate 110, which improves the current sharing performance between the upper bridge arm switching transistors 131 and reduces the possibility of short-circuit oscillation. The lower bridge arm switching transistors 132 on both sides are symmetrical about the central axis of the insulating substrate 110, which improves the current sharing performance between the upper bridge arm switching transistors 131 and reduces the possibility of short-circuit oscillation. The connection point between the upper bridge arm switching transistor 131 of the first chip mounting area 1211 and the AC electrode layer 124 is closer to the connection point between the upper bridge arm switching transistor 131 and the AC electrode layer 124 of the second chip mounting area 1221. The connection point between the lower bridge arm switching transistor 132 of the third chip mounting area 1241 and the negative electrode layer 123 is closer to the connection point between the lower bridge arm switching transistor 132 of the fourth chip mounting area 1242 and the negative electrode layer 123. Meanwhile, multiple upper bridge arm switches 131 are electrically connected to the entire copper layer of the AC electrode layer 124, and multiple lower bridge arm switches 132 are electrically connected to the entire copper layer of the negative electrode layer 123. Overall, compared with existing three-phase full-bridge power modules, the interconnection inductance between parallel switches is effectively reduced, thereby effectively reducing the risk of short-circuit oscillation in the power module and improving the reliability of the power module.

[0049] The embodiments described herein are preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Therefore, all equivalent changes made in accordance with the structure, shape, and principle of the present invention should be covered within the scope of protection of the present invention.

Claims

1. A power module, characterized by include: Insulating substrate (110); A first positive electrode layer (121) is formed on one side of the top surface of the insulating substrate (110); The second positive electrode layer (122) is formed on the other side of the top surface of the insulating substrate (110) and is symmetrical with the first positive electrode layer (121) about the central axis of the insulating substrate (110). A negative electrode layer (123) is formed in the middle of the top surface of the insulating substrate (110) and disposed near one end of the insulating substrate (110); An AC electrode layer (124) is formed in the middle of the top surface of the insulating substrate (110) and disposed near the other end of the insulating substrate (110); a first chip mounting region (1211) is disposed at one end of the first positive electrode layer (121) near the AC electrode layer (124); a second chip mounting region (1221) is disposed at one end of the second positive electrode layer (122) near the AC electrode layer (124); a third chip mounting region (1241) and a fourth chip mounting region (1242) are disposed at one end of the AC electrode layer (124) near the negative electrode layer (123); the third chip mounting region (1241) is located between the negative electrode layer (123) and the first positive electrode layer (121); the fourth chip mounting region (1242) is located between the negative electrode layer (123) and the second positive electrode layer (122); There are multiple upper bridge arm switching transistors (131); at least one of the upper bridge arm switching transistors (131) is fixed to the first chip mounting area (1211), and at least one of the upper bridge arm switching transistors (131) is fixed to the second chip mounting area (1221); the multiple upper bridge arm switching transistors (131) are respectively electrically connected to the AC electrode layer (124); There are multiple lower bridge arm switching transistors (132); at least one of the lower bridge arm switching transistors (132) is fixed to the third chip mounting area (1241), and at least one of the lower bridge arm switching transistors (132) is fixed to the fourth chip mounting area (1242); the multiple lower bridge arm switching transistors (132) are electrically connected to the negative electrode layer (123) respectively.

2. The power module of claim 1, wherein, The AC electrode layer (124) is further provided with a first signal carrying area (1243); the negative electrode layer (123) is provided with a second signal carrying area (1231); Also includes: The first signal electrode layer (141) is located above the central axis of the first signal mounting area (1243) and is electrically insulated from the AC electrode layer (124), and is electrically connected to each of the upper bridge arm switching tubes (131). The second signal electrode layer (142) is located above the central axis of the second signal mounting area (1231) and is electrically insulated from the negative electrode layer (123), and is electrically connected to each of the lower bridge arm switching transistors (132).

3. The power module of claim 2, wherein, Each of the upper bridge arm switching transistors (131) is provided with a first output terminal (1311) and a first control terminal (1312); each of the lower bridge arm switching transistors (132) is provided with a second output terminal (1321) and a second control terminal (1322); Also includes: There are multiple first power connectors (151), one end of which is fixedly connected to the first output terminal (1311) of the multiple upper bridge arm switching tubes (131) in a one-to-one correspondence, and the other end is fixedly connected to the AC electrode layer (124) respectively; the first power connectors (151) located on opposite sides are symmetrical about the central axis of the insulating substrate (110); There are multiple second power connectors (152), one end of which is fixedly connected to the second output terminal (1321) of the multiple lower bridge arm switching transistors (132) in a one-to-one correspondence, and the other end is fixedly connected to the negative electrode layer (123); the second power connectors (152) located on opposite sides are symmetrical about the central axis of the insulating substrate (110); There are multiple first signal connectors (161), one end of which is fixedly connected to the first control terminal (1312) of the multiple upper bridge arm switch tubes (131) in a one-to-one correspondence, and the other end is fixedly connected to the first signal electrode layer (141) respectively; the first signal connectors (161) located on opposite sides are symmetrical about the central axis of the insulating substrate (110); There are multiple second signal connectors (162), one end of which is fixedly connected to the second control terminal (1322) of the multiple lower bridge arm switch tubes (132) in a one-to-one correspondence, and the other end is fixedly connected to the second signal electrode layer (142) respectively; the second signal connectors (162) located on opposite sides are symmetrical about the central axis of the insulating substrate (110).

4. The power module according to claim 3, characterized in that, The connection point of the first power connector (151) away from the negative electrode layer (123) and the AC electrode layer (124) is located close to the negative electrode layer (123), and the length difference between the corresponding first power connector (151) and the adjacent first power connector (151) is 0-4mm.

5. The power module according to claim 3, characterized in that, The connection point of the second power connector (152) away from the AC electrode layer (124) and the negative electrode layer (123) is located away from the AC electrode layer (124), and the length difference between the corresponding second power connector (152) and the adjacent second power connector (152) is 0-4mm.

6. The power module according to claim 2, characterized in that, Also includes: The interconnect electrode layer (143) is located above the central axis of the first signal mounting area (1243) and is electrically insulated from the first signal electrode layer (141) and the AC electrode layer (124), respectively. The first interconnect (171) is fixedly connected at one end to the first positive electrode layer (121) and at the other end to the interconnect electrode layer (143); The second interconnect (172) is fixedly connected at one end to the second positive electrode layer (122) and at the other end to the interconnect electrode layer (143), and is symmetrical to the first interconnect (171) about the central axis of the insulating substrate (110).

7. The power module according to claim 2, characterized in that, The first signal mounting area (1243) is provided with a first island (12431); the two opposite sides of the first island (12431) are symmetrical about the central axis of the insulating plate; the second signal mounting area (1231) is provided with a second island (12311); the two opposite sides of the second island (12311) are symmetrical about the central axis of the insulating plate.

8. The power module according to claim 2, characterized in that, The first signal carrying area (1243) is provided with multiple third islands (12432); the second signal carrying area (1231) is provided with multiple fourth islands (12312).

9. The power module according to any one of claims 1 to 8, characterized in that, Also includes: The negative terminal (181) is disposed above the insulating substrate (110), with one end fixedly connected to the negative electrode layer (123) and the other end suitable for connection to the negative terminal of the power supply. A positive terminal (182) is disposed above the negative terminal (181), one end of which is fixedly connected to the first positive electrode layer (121), the other end of which is fixedly connected to the second positive electrode layer (122), and the middle part is suitable for connection to the positive terminal of the power supply. An AC terminal (183) is disposed above the insulating substrate (110), with one end fixedly connected to the AC electrode layer (124) and the other end suitable for connection to electrical equipment.

10. An inverter, characterized in that, Includes the power module as described in any one of claims 1 to 9.

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