An interior temperature control device, method, interior panel, steering wheel and automobile

Abstract

This invention relates to an interior temperature control device, method, interior panel, steering wheel, and vehicle. The device is mounted on the interior frame and includes: a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foam layer, and a skin contact layer. A pressure sensing layer and a temperature sensing layer are disposed within a flexible silicone film layer. The pressure sensing layer contains multiple pressure sensing units, and the temperature sensing layer contains temperature sensing units. The composite foam layer includes a dense support layer and a functional inner layer. The device also includes a control unit electrically connected to the multiple semiconductor units, multiple pressure sensing units, and multiple temperature sensing units. During heating, the temperature of the pressure contact area is lower than a preset heating temperature; during cooling, the temperature of the pressure contact area is higher than a preset cooling temperature. By individually controlling the temperature difference between the pressure contact area and the non-pressure contact area, the occurrence of cold spots or hot spots can be reduced.

Description

Technical Field

[0001] This invention relates to the field of intelligent cockpit thermal management technology, specifically to an interior temperature control device, method, interior panel, steering wheel, and automobile. Background Technology

[0002] With the development of intelligent automotive cockpits, users have placed higher demands on the tactile comfort of the in-vehicle human-machine interface. Traditional automotive interior surfaces (such as steering wheels and seats) typically employ passive temperature control solutions, such as installing electric heating wires or ordinary ventilation mesh to achieve heating or heat dissipation. However, existing temperature control technologies have significant shortcomings in terms of material structure and intelligent control: Existing technologies mostly use ordinary heat-dissipating materials (such as breathable mesh, leather, or conventional sponge) as the contact layer. These traditional materials have extremely poor thermal conductivity (typically less than 0.05 W / m·K), resulting in ineffective lateral heat dissipation. When used with localized heat sources such as semiconductors (TECs), they are prone to causing localized overheating and "cold spots" on the human contact surface, severely affecting the user's tactile experience. Summary of the Invention

[0003] One objective of this invention is to provide an interior temperature control device, method, interior panel, steering wheel, and automobile to solve the problem of hot and cold spots in the interior of existing technologies; a second objective is to provide a temperature control method; a third objective is to provide an interior panel; a fourth objective is to provide a steering wheel; and a fifth objective is to provide an automobile.

[0004] To achieve the above objectives, the technical solution adopted by the present invention is as follows: In a first aspect, an interior temperature control device is provided, disposed on an interior frame. The interior temperature control device includes: a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foam layer, and a skin contact layer sequentially disposed outwards along the surface of the interior frame. The semiconductor array layer contains multiple semiconductor units arranged in an array. The thermal bridge layer covers the semiconductor array layer, and its in-plane thermal conductivity is greater than the preset thermal conductivity. The thermally conductive integrated sensing layer is provided with a pressure sensing layer and a temperature sensing layer respectively along the extension direction of the flexible silicone film layer. The pressure sensing layer is provided with multiple pressure sensing units arranged in an array. The composite foam layer includes: a dense support layer and a functional inner layer bonded together; The interior temperature control device further includes: a control unit electrically connected to multiple semiconductor units, multiple pressure sensing units, and multiple temperature sensing units respectively. The control unit determines the pressure contact area and the non-pressure contact area based on the pressure sensing signals of the multiple pressure sensing units, and controls the multiple semiconductor units to heat up respectively, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature; or, controls the multiple semiconductor units to cool down respectively, so that the temperature of the non-pressure contact area cools down to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

[0005] Optionally, the control unit controls all semiconductor units to heat according to a first heating signal, so that the temperature of the skin contact layer rises to a preset heating temperature; the control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a second heating signal, so that the temperature of the pressure contact area is lower than the preset heating temperature; or, the control unit controls all semiconductor units to cool according to a first cooling signal, so that the temperature of the skin contact layer cools to a preset cooling temperature; the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool according to a second cooling signal, so that the temperature of the pressure contact area is higher than the preset cooling temperature.

[0006] Optionally, the temperature sensing layer is provided with a plurality of temperature sensing units arranged in an array.

[0007] Optionally, the control unit defines multiple rings of semiconductors in the pressure contact area along the outward-inward direction, and when the control unit controls at least one semiconductor unit corresponding to the pressure contact area to be heated according to the second heating signal, the temperature interval between different rings of semiconductor units along the outward-inward direction decreases; or, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to be cooled according to the second cooling signal, and the temperature interval between different rings of semiconductor units along the outward-inward direction increases.

[0008] Optionally, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a third signal and multiple semiconductor units in the non-pressure contact area to heat according to a fourth signal, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature; or, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool according to a fourth signal and multiple semiconductor units in the non-pressure contact area to cool according to a fifth signal, so that the temperature of the non-pressure contact area cools to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

[0009] Optionally, the semiconductor unit includes a base microchip, and the semiconductor array layer includes a metal conductive circuit substrate, wherein... Multiple base microchips are fixed to a metal conductive circuit substrate by solder, and the multiple base microchips are arranged in an array on the metal conductive circuit substrate; The control unit is electrically connected to the input / output terminals on the metal conductive circuit substrate to achieve electrical connection with each base microchip respectively.

[0010] Optionally, the thermal bridge layer includes a cavity heat spreader or a directional pyrolytic graphite sheet, wherein the cavity heat spreader or the directional pyrolytic graphite sheet is bonded to the hot end surface of the semiconductor unit via thermally conductive silicone.

[0011] Optionally, the thickness of the cavity heat spreader is less than or equal to 1.5 mm and the equivalent in-plane thermal conductivity is greater than 1500 W / m·K, or the thickness of the directional pyrolytic graphite sheet is 0.5 mm to 1.0 mm. The thermal conductivity of the thermally conductive silicone is greater than or equal to 8 W / m·K.

[0012] Optionally, the dense support layer includes a microporous dense structure with a first micropore, and the functional inner layer includes a microporous support structure with a second micropore, wherein heat-conducting sheets are dispersed in the second micropore; the average pore diameter of the second micropore is greater than the average pore diameter of the first micropore.

[0013] The thermally conductive integrated sensing layer includes a flexible silicone film layer, which is filled with thermally conductive particles. A pressure sensing layer and a temperature sensing layer are respectively disposed in the flexible silicone film layer along its extension direction.

[0014] Optionally, the thermally conductive particles are boron nitride or aluminum oxide micron or nanoparticles.

[0015] Optionally, the thermally conductive integrated sensing layer is further provided with an auxiliary heating layer, and the auxiliary heating layer is provided with a plurality of arrayed resistance heating units; The control unit is electrically connected to the plurality of resistance heating units respectively. When the control unit controls the remaining semiconductor units in the non-pressure contact area to heat, if the temperature of the non-pressure contact area does not rise to the preset heating temperature value within a preset time, the control unit controls the resistance heating unit to heat, and when the temperature of the non-pressure contact area rises to the preset heating temperature value, the control unit controls the resistance heating unit to stop heating.

[0016] Optionally, the composite foam layer is a polymer foam matrix made of polyurethane or thermoplastic polyolefin, and the second micropore is doped with 1-5 wt% sheet graphene or hexagonal boron nitride.

[0017] Optionally, the interior temperature control device further includes a thermally conductive interface layer located between the semiconductor array layer and the interior frame.

[0018] Optionally, the thermal interface layer is a high thermal conductivity silicone grease or a phase change thermal pad.

[0019] Secondly, this application provides a temperature control method applied to the interior temperature control device described in any of the foregoing embodiments, the method comprising: The control unit acquires pressure sensing signals from multiple pressure sensing units; and determines the pressure contact area based on the pressure sensing signals, and determines the area outside the pressure contact area as the non-pressure contact area. The control unit controls the heating of the multiple semiconductor units respectively, so that the temperature of the non-pressure contact area rises to a preset heating temperature value, and the temperature of the pressure contact area is lower than the preset heating temperature; Alternatively, the control unit controls multiple semiconductor units to cool down respectively, so that the temperature of the non-pressure contact area is reduced to a preset cooling temperature, and the temperature of the pressure contact area is higher than the preset cooling temperature.

[0020] Optionally, the control unit controls the heating of the plurality of semiconductor units respectively, including: the control unit controls all semiconductor units to heat according to a first heating signal to raise the temperature of the skin contact layer to a preset heating temperature; the control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a second heating signal to lower the temperature of the pressure contact area than the preset heating temperature. Alternatively, the control unit controls multiple semiconductor units to cool down respectively, including: the control unit controls all semiconductor units to cool down according to a first cooling signal, so that the temperature of the skin contact layer is cooled down to a preset cooling temperature; the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool down according to a second cooling signal, so that the temperature of the pressure contact area is higher than the preset cooling temperature.

[0021] Optionally, the control unit defines multiple rings of semiconductors in the pressure contact area along the outward-inward direction, and when the control unit controls at least one semiconductor unit corresponding to the pressure contact area to be heated according to the second heating signal, the temperature interval between different rings of semiconductor units decreases along the outward-inward direction. or, The control unit defines multiple rings of semiconductors in the pressure contact area along the outward-inward direction. The control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool down according to the second cooling signal, and the temperature interval between different rings of semiconductor units increases along the outward-inward direction.

[0022] Optionally, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a third signal and multiple semiconductor units in the non-pressure contact area to heat according to a fourth signal, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature; or, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool according to a fourth signal and multiple semiconductor units in the non-pressure contact area to cool according to a fifth signal, so that the temperature of the non-pressure contact area cools to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

[0023] Fourthly, this application provides an interior panel, including an interior frame, comprising: an interior temperature control device disposed on the interior frame as described in any of the foregoing embodiments, the interior temperature control device comprising: a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foam layer and a skin contact layer disposed sequentially outward along the surface of the interior frame.

[0024] Fifthly, this application provides a steering wheel, comprising: a steering wheel frame, characterized in that it includes: an interior temperature control device disposed on the steering wheel frame as provided in any of the foregoing embodiments, the interior temperature control device comprising: a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foam layer and a skin contact layer disposed sequentially outward along the surface of the steering wheel frame.

[0025] Optionally, the interior temperature control device is arranged circumferentially on the steering wheel frame, and is provided with a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foam layer and a skin contact layer respectively in the inward and outward direction.

[0026] Optionally, the steering wheel frame includes: a first surface and a second surface opposite to the first surface, wherein the first surface faces the driver's direction; The semiconductor array layer, thermal bridge layer, and thermally conductive integrated sensing layer are all disposed in the corresponding half-circumference region of the second surface. The composite foam layer and the skin contact layer are arranged circumferentially on the steering wheel frame.

[0027] Optionally, a mounting groove is provided on the second surface of the steering wheel frame, and the semiconductor array layer, thermal bridge layer, and thermally conductive integrated sensing layer are all disposed in the mounting groove. The surface of the thermally conductive integrated sensing layer is flush with the surface of the steering wheel frame and forms a circumferential surface.

[0028] Optionally, a flexible aerogel layer is provided between the steering wheel frame and the composite foam layer in the corresponding area of ​​the first surface.

[0029] Optionally, the interior temperature control device is disposed on the circumference and horizontal bar of the steering wheel frame.

[0030] Optionally, the steering wheel is provided with temperature control zones at the 3 o'clock and 9 o'clock positions, and each of the temperature control zones is provided with the interior temperature control device.

[0031] Sixthly, this application provides an automobile including a steering wheel as described in any of the foregoing embodiments.

[0032] The beneficial effects of this invention are: The interior temperature control device provided in this application embodiment comprises a thermal bridge layer, a thermally conductive integrated sensing layer, and a composite foaming layer disposed on a semiconductor array layer. The thermal bridge layer conducts point-like heat or cold sources from the semiconductor units laterally. The thermally conductive particles in the thermally conductive integrated sensing layer also contribute to lateral conduction, as do the thermally conductive sheets in the composite foaming layer. This transforms the heat or cooling generated by the point-like semiconductors into a lateral, uniformly heated surface heat or cold source, preventing overheating or undercooling at a single location or point, thus avoiding cold or hot spots in contact with the human body. Furthermore, the pressure sensing signal from the pressure sensing unit identifies the pressure contact area and non-pressure contact area. Heating the pressure contact area using individual semiconductor units can lower the temperature of the pressure contact area below a preset heating temperature; alternatively, multiple semiconductor units can be controlled to cool down individually, ensuring the temperature of the pressure contact area exceeds the preset cooling temperature. In this way, while equalizing the temperature of the area that the user touches, it is also considered that continuous pressing may cause internal overheating or overcooling. Therefore, by separately controlling the temperature difference between the semiconductor unit corresponding to the pressure contact area and the non-pressure contact area, the pressure contact area can be appropriately cooled during heating and appropriately heated during cooling, thereby further reducing the occurrence of cold spots or hot spots. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of a structure for the interior panel temperature control device of this application; Figure 2 This is a schematic diagram of the composite foam layer in this application; Figure 3 This is a schematic diagram of the semiconductor array layer structure of this application; Figure 4 This is another structural schematic diagram of the interior panel temperature device of this application; Figure 5 A schematic diagram of steering wheel grip provided in an embodiment of this application; Figure 6 This is a schematic diagram of the structure of the thermally conductive integrated sensing layer in the embodiments of this application; Figure 7 This is a schematic diagram of the steering wheel provided in an embodiment of this application; Figure 8 for Figure 7 Cross-sectional view along the AA direction; Figure 9 A schematic flowchart of a temperature control method is provided for an embodiment of this application; Figure 10 This is another schematic flowchart of the temperature control method of the system in the embodiment of this application; Figure 11 This is a schematic diagram of the vehicle structure provided in an embodiment of this application.

[0034] 100. Interior temperature control device; 212. Semiconductor array layer; 213. Thermal bridge layer; 214. Thermally conductive integrated sensing layer; 215. Composite foam layer; 216. Skin contact layer; 210. Interior frame; 2121. Semiconductor unit; 2141. Pressure sensing unit; 2142. Temperature sensing unit; 217. Control unit; 2122. Metal conductive circuit substrate; 2123. Input / output terminal; 211. Thermally conductive interface layer; 2151. Dense support layer; 2152. Functional inner layer; 2153. Second micropore; 23. Standardized vehicle interface; 22. Distributed intelligent control center; 410. Steering frame; 414. Flexible aerogel layer. Detailed Implementation The embodiments of the present invention will be described below with reference to the accompanying drawings and preferred embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be understood that the preferred embodiments are only for illustrating the present invention and not for limiting the scope of protection of the present invention.

[0035] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0036] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0037] It should be noted that in the description of this application, the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0038] Furthermore, it should be understood that, for ease of description, the dimensions of the various components shown in the accompanying drawings are not drawn to actual scale; for example, the thickness or width of some layers may be exaggerated relative to other layers.

[0039] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined or described in one figure, it will not need to be discussed or described in detail in the description of the subsequent figures.

[0040] Existing technologies mostly use ordinary heat-dissipating materials (such as breathable mesh, leather, or conventional sponge) as the contact layer. These traditional materials have extremely poor thermal conductivity (typically less than 0.05 W / m·K), resulting in ineffective lateral heat dissipation. When used with localized heat sources such as semiconductors (TECs), they are prone to causing localized overheating and "cold spots" on the human contact surface, severely affecting the user's tactile experience.

[0041] To address the issue of hot and cold spots on surfaces in contact with the user when using semiconductors for heat dissipation, this application provides an interior temperature control device applied to the interior frame. This way, the user does not directly contact the interior frame but directly contacts the interior temperature control device of this application. Figure 1 As shown in the figure, the interior frame is 210, and the interior temperature control device may include the following parts.

[0042] The interior temperature control device 100 includes: a semiconductor array layer 212, a thermal bridge layer 213, a thermally conductive integrated sensing layer 214, a composite foam layer 215, and a skin contact layer 216. The multi-layer structure of the interior temperature control device 100 is arranged sequentially from the inside to the outside along the surface of the interior frame, with multiple layers stacked on top of each other.

[0043] Specifically: a semiconductor array layer 212 is disposed on the surface of the interior frame 210. A thermal bridge layer 213 is located on the surface of the semiconductor array layer 212, a thermally conductive integrated sensing layer 214 is located on the surface of the thermal bridge layer 213, a composite foam layer 215 covers the thermally conductive integrated sensing layer 214, and a skin contact layer 216 is wrapped around the composite foam layer 215.

[0044] See Figure 3 As shown, the semiconductor array layer 212 has a plurality of semiconductor units 2121 arranged in an array. The semiconductor unit 2121 can be a microchip, and in this embodiment, it can specifically be a bismuth telluride (Bi2Te3) based micro thermoelectric chip, and the thickness of the bismuth telluride (Bi2Te3) based micro thermoelectric chip is 2.0 mm-3.0 mm.

[0045] The purpose of the thermal bridge layer 213 is to rapidly diffuse heat laterally. Therefore, the thermal bridge layer is required to have a high equivalent in-plane thermal conductivity. In this embodiment, the equivalent in-plane thermal conductivity of the thermal bridge layer 213 is greater than or equal to a preset equivalent in-plane thermal conductivity, which can be 1500 W / m·K. To achieve the lateral heat dissipation function of the thermal bridge layer, in this embodiment, the thermal bridge layer 213 can be a cavity heat exchanger. The cavity heat exchanger can have an ultra-thin structure, specifically: a thickness ≤ 1.5 mm. In addition, the equivalent in-plane thermal conductivity of the cavity heat exchanger is > 1500 W / m·K. In another embodiment, the thermal bridge layer 213 can be a oriented pyrolytic graphite sheet. The oriented pyrolytic graphite sheet can be a highly oriented pyrolytic graphite sheet with a thickness of 0.5–1.0 mm. In practical applications, each semiconductor unit has a hot end surface. During installation, the cavity heat spreader or directional pyrolytic graphite sheet is attached to the hot end surface of the semiconductor unit through thermally conductive silicone. The thermal conductivity of the thermally conductive silicone can be greater than or equal to 8 W / m·K.

[0046] In this embodiment, the thermally conductive integrated sensing layer 214 can also function as a temperature and pressure sensing layer. Specifically, the thermally conductive integrated sensing layer 214 includes a pressure sensing layer and a temperature sensing layer. In practice, the pressure sensing layer can be located above or below the temperature sensing layer. This application does not limit the arrangement of these two layers. In this embodiment, the pressure sensing layer and the temperature sensing layer can extend along the extension direction of the plane containing the thermally conductive integrated sensing layer 214. See also... Figure 4 As shown, the pressure sensing layer contains multiple pressure sensing units 2141 arranged in an array (each pressure sensing unit may include one or more pressure sensors). The function of the pressure sensing units is to detect the pressure exerted by the user on the skin contact layer. See [link to documentation]. Figure 5As shown, this is the pressure value felt by the user when holding the interior temperature detection device. By detecting the pressure value, the area pressed by the user can be accurately determined, that is, the area held by the user.

[0047] In addition, multiple temperature sensing units 2142 arranged in an array are provided in the temperature sensing layer (the temperature sensing unit may include one or more temperature sensors). The function of the temperature sensing unit is to detect the temperature of the thermally conductive integrated sensing layer 214. Since there is only a composite foam layer and a skin contact layer outside the thermally conductive integrated sensing layer 214, the temperature of the thermally conductive integrated sensing layer is almost equivalent to the temperature of the skin contact layer. Therefore, the temperature of the skin contact layer can be characterized by the detection of the temperature sensing unit in the thermally conductive integrated sensing layer.

[0048] In this embodiment, the thermally conductive integrated sensing layer 214 includes a flexible silicone film layer with a thickness of 5mm-10mm. One function of the thermally conductive integrated sensing layer is to conduct heat. To achieve heat dissipation, thermally conductive particles can be filled in the flexible silicone film layer. Specifically, the thermally conductive particles can be boron nitride micron or nanoparticles, or alumina micron or nanoparticles. The thermally conductive particles are uniformly dispersed in the flexible silicone film layer. In specific applications, the thermally conductive particles can be distributed in multiple layers within the flexible silicone film layer.

[0049] In the embodiments of this application, see Figure 1 and Figure 2 As shown, the composite foam layer 215 includes: a dense support layer 2151 and a functional inner layer 2152 bonded together, wherein the dense support layer 2151 includes a microporous dense structure with first micropores, and the functional inner layer 2152 includes a microporous support structure with second micropores. (See also...) Figure 2 As shown, thermally conductive sheets are dispersed in the second micropore 2153, and the average pore diameter of the second micropore is larger than the average pore diameter of the first micropore. In this embodiment, the thickness of the composite foam layer can be 4.0-6.0 mm.

[0050] In practical applications, the composite foam layer is integrally formed through a mold foaming process. It includes a dense support layer on top, with a thickness of 1.0-2.0 mm, made of polyurethane (PU) or thermoplastic polyolefin (TPO), featuring a microporous and dense structure to provide excellent surface support and a smooth feel, preventing collapse under pressure. The functional inner layer, with a thickness of 3.0-4.0 mm, is filled beneath the dense support layer, with thermally conductive sheets dispersed within it. In the embodiments of this application, a polymer foam matrix doped with 1-5 wt% sheet graphene or hexagonal boron nitride (h-BN) can be used, with an overall thermal conductivity ≥0.8 W / m·K. This functional inner layer is used to rapidly homogenize the point heat source of the semiconductor unit into a surface heat source.

[0051] In this embodiment, the interior temperature control device 100 further includes a control unit 217 electrically connected to a plurality of semiconductor units 2121, a plurality of pressure sensing units 2141, and a plurality of temperature sensing units 2142. The control unit 217 can be a microprocessor unit. In this embodiment, a plurality of terminals are provided in the semiconductor array layer and the thermally conductive integrated sensing layer, so that the control unit can be electrically connected to the plurality of semiconductor units 2121, the plurality of pressure sensing units 2141, and the plurality of temperature sensing units 2142 via the terminals.

[0052] The control unit 217 can determine the pressure contact area and the non-pressure contact area based on the pressure sensing signals of the multiple pressure sensing units, and control the multiple semiconductor units to heat up respectively, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature; or, control the multiple semiconductor units to cool down respectively, so that the temperature of the non-pressure contact area cools down to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

[0053] The interior temperature control device provided in this application embodiment comprises a thermal bridge layer, a thermally conductive integrated sensing layer, and a composite foaming layer disposed on a semiconductor array layer. The thermal bridge layer conducts point-like heat or cold sources from the semiconductor units laterally. The thermally conductive particles in the thermally conductive integrated sensing layer also contribute to lateral conduction, as do the thermally conductive sheets in the composite foaming layer. This transforms the heat or cooling generated by the point-like semiconductors into a lateral, uniformly heated surface heat or cold source, preventing overheating or undercooling at a single location or point, thus avoiding cold or hot spots in contact with the human body. Furthermore, the pressure sensing signal from the pressure sensing unit identifies the pressure contact area and non-pressure contact area. Heating the pressure contact area using individual semiconductor units can lower the temperature of the pressure contact area below a preset heating temperature; alternatively, multiple semiconductor units can be controlled to cool down individually, ensuring the temperature of the pressure contact area exceeds the preset cooling temperature. In this way, while equalizing the temperature of the area that the user touches, it is also considered that continuous pressing may cause internal overheating or overcooling. Therefore, by separately controlling the temperature difference between the semiconductor unit corresponding to the pressure contact area and the non-pressure contact area, the pressure contact area can be appropriately cooled during heating and appropriately heated during cooling, thereby further reducing the occurrence of cold spots or hot spots.

[0054] In other embodiments of this application, the control unit may control the temperature of the pressure contact area and the non-pressure contact area in the following manner: In one embodiment of this application, the control unit 217 controls all semiconductor units 2121 to heat according to a first heating signal. Specifically, this can be achieved by heating for a fixed duration, such as 5 minutes, or by using feedback from a temperature difference sensing unit to raise the temperature of the skin contact layer to a preset heating temperature. In this case, rapid heating is the primary consideration, so differentiated control is not required. After heating according to the first heating signal, the control unit uses the pressure sensing signal from the pressure sensing unit to determine the pressure contact area and non-pressure contact areas. Then, it controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a second heating signal. When the semiconductor unit heats according to the second heating signal, the heat generated per unit time is less than the heat generated when the semiconductor unit heats according to the first heating signal, thus ensuring that the temperature of the pressure contact area is lower than the preset heating temperature.

[0055] In another embodiment of this application, the control unit 217 controls all semiconductor units to cool down according to a first cooling signal. Specifically, this can be done by cooling for a fixed duration, such as 5 minutes, or by using feedback from a temperature difference sensing unit to cool the temperature of the skin contact layer to a preset cooling temperature. In this case, uniform cooling is performed primarily for rapid cooling, so differentiated control is not required at this stage. After cooling according to the first cooling signal, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool down according to a second cooling signal. When a semiconductor unit cools down according to the second cooling signal, the temperature decrease per unit time is the same as the temperature decrease of the semiconductor unit according to the first cooling signal. This ensures that the temperature of the pressure contact area is higher than the preset cooling temperature.

[0056] In this embodiment, during heating, the semiconductor unit within the pressure contact area is heated using a second heating signal. Since the heat generated per unit time by the semiconductor unit when heated according to the second heating signal is less than the heat generated when heated according to the first heating signal, the temperature of the pressure contact area can be kept below the preset heating temperature. During cooling, the semiconductor unit within the pressure contact area is cooled using a second cooling signal. The temperature decrease per unit time by the semiconductor unit when cooled according to the second cooling signal is the same as the temperature decrease per unit time by the semiconductor unit when cooled according to the first cooling signal, thus keeping the temperature of the pressure contact area above the preset cooling temperature. Therefore, the device provided in this embodiment allows for differentiated control of the pressure contact area and non-pressure contact areas, preventing overheating or overcooling in the pressure contact area, and thus avoiding the formation of cold spots or hot spots.

[0057] Existing semiconductor refrigeration systems generally employ simple temperature threshold switching control or basic PID control. Because semiconductor refrigeration, while lowering surface temperature, can easily cause the surface temperature to drop below the ambient dew point, this lack of predictive control leads to frequent condensation on interior surfaces, affecting not only the user experience but also potentially causing short circuits and damage to electronic components.

[0058] In other embodiments of this application, when the control unit 217 controls all semiconductor units to cool down according to the first cooling signal, the following methods can be used: First, the system acquires the ambient humidity data of the vehicle's current environment. The current environment can be the environment outside the vehicle or the environment inside the vehicle. One or more humidity sensing units, such as external humidity sensing units and internal humidity sensing units, can be set up to collect the ambient humidity data of the internal environment or the external environment.

[0059] Then, based on the ambient humidity data, the dew point temperature of the current environment is calculated. The dew point temperature is the temperature at which condensation easily occurs in the current environment; below this temperature, condensation will form on the vehicle's interior.

[0060] Then, it is determined whether the preset cooling temperature is higher than the dew point temperature; if the preset cooling temperature is higher than the dew point temperature, all semiconductor units are controlled to cool down according to the first cooling signal. Cooling can then continue.

[0061] When the preset cooling temperature is lower than the dew point temperature, a first current value of the first cooling signal is acquired. To prevent condensation, the first current value can be reduced to obtain a second current value, and the cooling signal corresponding to the second current value can be pulse-width modulated. Reducing the current value to obtain the second current value reduces the cooling effect of the semiconductor, decreases the amount of cold air generated, and prevents the dew point from being reached too quickly. Pulse-width modulation, i.e., adjusting the duty cycle of the cooling signal corresponding to the second current, prevents the control signal corresponding to the second current from continuously outputting the second current, but instead outputs it according to the duty cycle. This allows the semiconductor to work intermittently, which also prevents the dew point from being reached too quickly.

[0062] The semiconductor unit is controlled using an adjusted cooling signal to cool the temperature of the skin contact layer to the dew point temperature.

[0063] In the previous embodiment, differentiated control was applied to semiconductor cells in the pressure contact area and non-pressure contact area, allowing for uniform control of semiconductor cells located in the pressure contact area. In another embodiment of this application, differentiated control can also be applied between semiconductor cells in the pressure contact area, for example: see... Figure 6As shown in the figure, the area indicated by the dashed line can be the pressure contact area corresponding to the driver's palm. The control unit 217 defines multiple rings of semiconductors in the pressure contact area from the outside to the inside, such as... Figure 6 In the diagram, the dotted line represents the edge, pointing inwards. When the control unit 217 controls at least one semiconductor unit corresponding to the pressure contact area to heat according to the second heating signal, the temperature interval between different rings of semiconductor units decreases in the outward-inward direction; or, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool according to the second cooling signal, and the temperature interval between different rings of semiconductor units increases in the outward-inward direction.

[0064] By defining corresponding multi-ring semiconductors within the pressure contact area, the semiconductor units in the pressure contact area can be graded or grouped. The temperature difference between the outermost semiconductor units and those in the non-pressure contact area is minimal. Within the pressure contact area, the temperature difference increases towards the center, resulting in a gradual temperature change from the non-pressure contact area to the center, rather than a fixed temperature for both. This ensures that when the user presses onto the surface contact layer, the temperature decreases as the interior heats up due to slower heat dissipation, preventing overheating and hot spots even with heat accumulation. Conversely, during cooling, the temperature increases as the interior cools down due to slower heat dissipation, preventing overcooling and cold spots even with cold air accumulation.

[0065] In the previous embodiment, when performing differentiated control on semiconductor cells in the pressure contact area and non-pressure contact area, the temperature was first uniformly increased or decreased before differentiated control was performed. In this embodiment, differentiated control can be performed at the start of control, specifically as follows: During heating, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a third signal and multiple semiconductor units in the non-pressure contact area to heat according to a fourth signal, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature.

[0066] During cooling, at least one semiconductor unit corresponding to the pressure contact area is controlled to cool down according to a fourth signal and multiple semiconductor units in the non-pressure contact area are controlled to cool down according to a fifth signal, so that the temperature of the non-pressure contact area is cooled down to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

[0067] The interior panel temperature control device provided in this application embodiment can differentiate the heating process, allowing the pressure contact area and non-pressure contact area to be heated separately, with the temperature of the pressure contact area lower than the preset heating temperature. Similarly, it can differentiate the cooling process, allowing the pressure contact area and non-pressure contact area to be cooled separately, with the temperature of the pressure contact area higher than the preset cooling temperature. This avoids overheating or overcooling in the pressure contact area, thereby preventing the formation of cold or hot spots.

[0068] In the embodiments of this application, see Figure 3 As shown, the semiconductor unit 2121 may include a base microchip, and the semiconductor array layer includes a metal conductive circuit substrate 2122.

[0069] Multiple base microchips are fixed to a metal conductive circuit substrate by solder, and the multiple base microchips are arranged in an array on the metal conductive circuit substrate; see also Figure 3 As shown, the semiconductor units 2121 are arranged in a matrix, and the row and column spacing of the matrix can be determined according to the area of ​​the interior.

[0070] In addition, the control unit is electrically connected to the input / output terminals 2123 on the metal conductive circuit substrate 2122 to achieve electrical connection with each base microchip. Specifically, the semiconductor unit 2121 includes an input terminal and an output terminal, which are electrically connected to the input / output terminals 2123 respectively. In cooling mode (high surface temperature): a forward current can be applied to the semiconductor unit 2121. Based on the Peltier effect, the current drives the "working surface" of the semiconductor unit 2121 to cool down. Heat is "drawn" from the working surface through the composite foam layer and finally discharged from the "heat dissipation surface" of the skin contact layer. In heating mode (low surface temperature): a reverse current direction is applied to the semiconductor unit 2121, and the Peltier effect is reversed accordingly. The "working surface" of the semiconductor unit 2121 becomes exothermic, and heat is transferred from the "working surface" to the contact surface of the skin contact layer.

[0071] In one embodiment of this application, in order to achieve faster heating, an auxiliary heating layer may also be provided in the thermally conductive integrated sensing layer, and the auxiliary heating layer is provided with a plurality of arrayed resistance heating units; The control unit is electrically connected to the plurality of resistance heating units respectively. When the control unit controls the remaining semiconductor units in the non-pressure contact area to heat, if the temperature of the non-pressure contact area does not rise to the preset heating temperature value within a preset time, the control unit controls the resistance heating unit to heat, and when the temperature of the non-pressure contact area rises to the preset heating temperature value, the control unit controls the resistance heating unit to stop heating.

[0072] When the semiconductor unit 2121 is heated, the resistance heating unit in the auxiliary heating layer can rapidly raise the temperature of the skin contact layer, avoiding long waiting times for users and improving the user experience.

[0073] In this embodiment, to ensure a microscopically tight fit between the interior trim frame 210 and the interior trim frame 210, eliminating interface gaps and reducing contact thermal resistance, the interior trim temperature control device further includes a thermally conductive interface layer 211, which is located between the semiconductor array layer 212 and the interior trim frame 210. In specific applications, the thermally conductive interface layer is a high thermal conductivity silicone grease or a phase change thermal pad, and its thickness can be 0.2 mm.

[0074] This application also provides a temperature control method applied to the aforementioned interior temperature control device. When heating, see... Figure 8 As shown, the temperature control method may include the following steps.

[0075] S101, the control unit acquires pressure sensing signals from multiple pressure sensing units; and determines the pressure contact area based on the pressure sensing signals, and determines the area outside the pressure contact area as the non-pressure contact area; S102, the control unit controls the multiple semiconductor units to heat up respectively, so that the temperature of the non-pressure contact area rises to a preset heating temperature value, and the temperature of the pressure contact area is lower than the preset heating temperature.

[0076] In other embodiments of this application, when cooling is performed, see [reference needed]. Figure 9 As shown, the temperature control method may include the following steps.

[0077] S101, the control unit acquires pressure sensing signals from multiple pressure sensing units; and determines the pressure contact area based on the pressure sensing signals, and determines the area outside the pressure contact area as the non-pressure contact area; S103, the control unit controls the multiple semiconductor units to cool down respectively, so that the temperature of the non-pressure contact area is cooled down to a preset cooling temperature, and the temperature of the pressure contact area is higher than the preset cooling temperature.

[0078] The method provided in this application embodiment can determine the pressure contact area and non-pressure contact area through the pressure sensing signal of the pressure sensing unit. Furthermore, by heating the pressure contact area separately using semiconductor units, the temperature can be lower than the preset heating temperature; alternatively, multiple semiconductor units can be controlled to cool down separately, so that the temperature of the pressure contact area is higher than the preset cooling temperature. Thus, while uniformly heating the area contacted by the user, considering that continuous pressing could lead to overheating or overcooling, by individually controlling the temperature difference between the semiconductor units corresponding to the pressure contact area and the non-pressure contact area, the pressure contact area can be appropriately cooled during heating and appropriately heated during cooling, thereby further reducing the occurrence of cold spots or hot spots.

[0079] In one embodiment of this application, the aforementioned step S102, which controls the heating of the plurality of semiconductor units respectively, can be carried out in the following manner: The control unit controls all semiconductor units to heat according to a first heating signal, so that the temperature of the skin contact layer rises to a preset heating temperature. The control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a second heating signal, so that the temperature of the pressure contact area is lower than the preset heating temperature.

[0080] In this step, rapid temperature rise is the primary consideration during heating, so differentiated control is not required. After heating according to the first heating signal, the control unit can determine the pressure contact area and non-pressure contact area through the pressure sensing signal from the pressure sensing unit. Then, it controls at least one semiconductor unit corresponding to the pressure contact area to heat according to the second heating signal. When the semiconductor unit heats according to the second heating signal, the heat generated per unit time is less than the heat generated when the semiconductor unit heats according to the first heating signal. This ensures that the temperature of the pressure contact area is lower than the preset heating temperature.

[0081] In one embodiment of this application, the aforementioned step S103, which controls the cooling of the plurality of semiconductor units respectively, can be carried out in the following manner: The control unit controls multiple semiconductor units to cool down, including: the control unit controls all semiconductor units to cool down according to a first cooling signal, so that the temperature of the skin contact layer is reduced to a preset cooling temperature; the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool down according to a second cooling signal, so that the temperature of the pressure contact area is higher than the preset cooling temperature.

[0082] In this step, uniform cooling is performed primarily to achieve rapid cooling, so differentiated control is not required at this stage. After cooling according to the first cooling signal, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool according to the second cooling signal. When the semiconductor unit cools according to the second cooling signal, the temperature decrease per unit time is the same as the temperature decrease of the semiconductor unit according to the first cooling signal. This ensures that the temperature of the pressure contact area is higher than the preset cooling temperature.

[0083] In another embodiment of this application, the aforementioned step S102, which controls the heating of the plurality of semiconductor units respectively, can be carried out in the following manner: The control unit defines multiple rings of semiconductors in the pressure contact area along the outward-inward direction. When the control unit controls at least one semiconductor unit corresponding to the pressure contact area to be heated according to the second heating signal, the temperature interval between different rings of semiconductor units decreases along the outward-inward direction.

[0084] See Figure 6 As shown in the figure, the area indicated by the dashed line can be the pressure contact area corresponding to the driver's palm. The control unit 217 defines multiple rings of semiconductors in the pressure contact area from the outside to the inside, such as... Figure 6 In the diagram, the edge is indicated by the dotted line, pointing inwards. When the control unit 217 controls at least one semiconductor unit corresponding to the pressure contact area to be heated according to the second heating signal, the temperature interval between different rings of semiconductor units decreases in the outward-inward direction.

[0085] By defining corresponding multi-ring semiconductors within the pressure contact area, the semiconductor units in the pressure contact area can be graded or grouped. The temperature difference between the outermost semiconductor units and those in the non-pressure contact area is minimal. Within the pressure contact area, the temperature difference increases towards the center, resulting in a gradual temperature change from the non-pressure contact area to the center, rather than a fixed temperature for both areas. This ensures that when the user presses onto the surface contact layer, the temperature decreases as the area heats up, as heat dissipation is slower in the interior. Therefore, even with heat accumulation, overheating and hot spots are prevented.

[0086] In another embodiment of this application, the aforementioned step S103, which controls the cooling of the plurality of semiconductor units respectively, can be carried out in the following manner: The control unit defines multiple rings of semiconductors in the pressure contact area along the outward-inward direction, controls at least one semiconductor unit corresponding to the pressure contact area to cool down according to the second cooling signal, and increases the temperature interval between different rings of semiconductor units along the outward-inward direction.

[0087] See Figure 6 As shown in the figure, the area indicated by the dashed line can be the pressure contact area corresponding to the driver's palm. The control unit 217 defines multiple rings of semiconductors in the pressure contact area from the outside to the inside, such as... Figure 6 In the diagram, the dotted line represents the edge, pointing inwards. The control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool down according to the second cooling signal, with the temperature interval between different rings of semiconductor units increasing along the outward-inward direction.

[0088] By defining corresponding multi-ring semiconductors within the pressure contact area, the semiconductor units in the pressure contact area can be graded or grouped. The temperature difference between the outermost semiconductor units and those in the non-pressure contact area is minimal. Within the pressure contact area, the temperature difference increases towards the center, resulting in a gradual temperature change from the non-pressure contact area to the center, rather than a fixed temperature for both. This ensures that when a user presses on the surface contact layer, the temperature of the innermost areas decreases as heat dissipates. Because heat dissipation is slower in the inner areas, even with accumulated cold air, the surface will not become overcooled, preventing cold spots.

[0089] In the previous embodiment, when performing differentiated control on semiconductor cells in the pressure contact area and non-pressure contact area, the temperature was first uniformly increased or decreased, and then differentiated control was performed. In the embodiment of this application, differentiated control can be performed at the beginning of control. The aforementioned step S102 can be performed in the following manner.

[0090] The control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a third signal and multiple semiconductor units in the non-pressure contact area to heat according to a fourth signal, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature.

[0091] The aforementioned step S103 can be performed in the following manner.

[0092] The system controls at least one semiconductor unit corresponding to the pressure contact area to cool down according to a fourth signal and multiple semiconductor units in the non-pressure contact area to cool down according to a fifth signal, so that the temperature of the non-pressure contact area is cooled down to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

[0093] The interior panel temperature control device provided in this application embodiment can differentiate the heating process, allowing the pressure contact area and non-pressure contact area to be heated separately, with the temperature of the pressure contact area lower than the preset heating temperature. Similarly, it can differentiate the cooling process, allowing the pressure contact area and non-pressure contact area to be cooled separately, with the temperature of the pressure contact area higher than the preset cooling temperature. This avoids overheating or overcooling in the pressure contact area, thereby preventing the formation of cold or hot spots.

[0094] This application also provides an interior panel, see [link]. Figure 1 As shown, the interior trim panel may include: an interior trim frame 210, which may be a metal bracket, see [reference]. Figure 1 As shown, the interior panel may further include: an interior temperature control device 100 as described in any of the foregoing embodiments, disposed on the interior frame, the interior temperature control device comprising: a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foaming layer and a skin contact layer disposed sequentially outward along the surface of the interior frame.

[0095] The interior panel provided in this application embodiment incorporates a thermal bridge layer, a thermally conductive integrated sensing layer, and a composite foaming layer on a semiconductor array layer. The thermal bridge layer conducts point-like heat or cold sources from the semiconductor units laterally. The thermally conductive particles in the thermally conductive integrated sensing layer also contribute to lateral conduction, as do the thermally conductive sheets in the composite foaming layer. This transforms the heat or cooling generated by the point-like semiconductors into a lateral, uniformly heated surface heat or cold source, preventing overheating or undercooling at a single location or point, thus avoiding cold or hot spots in contact with the human body. Furthermore, the pressure sensing signal from the pressure sensing unit identifies pressure contact areas and non-pressure contact areas. Heating the pressure contact areas using individual semiconductor units can lower the temperature of the pressure contact areas below a preset heating temperature; alternatively, multiple semiconductor units can be controlled to cool down individually, ensuring the temperature of the pressure contact areas exceeds a preset cooling temperature. In this way, while equalizing the temperature of the area that the user touches, it is also considered that continuous pressing may cause internal overheating or overcooling. Therefore, by separately controlling the temperature difference between the semiconductor unit corresponding to the pressure contact area and the non-pressure contact area, the pressure contact area can be appropriately cooled during heating and appropriately heated during cooling, thereby further reducing the occurrence of cold spots or hot spots.

[0096] This application also provides a steering wheel, such as... Figure 7 As shown, the steering wheel may include the following structure.

[0097] The steering wheel frame 410 can be a ring frame. In other embodiments, the steering wheel can also be a non-circular structure. Regardless of the structure, the steering wheel frame 410 serves to steer in the direction of rotation. Its structure can be a metal rod or a metal part.

[0098] See Figure 7 As shown, the steering wheel may also include: an interior temperature control device 100 with the volume of the aforementioned embodiment disposed on the steering wheel frame, the interior temperature control device 100 including: a semiconductor array layer 212, a thermal bridge layer 213, a thermally conductive integrated sensing layer 214, a composite foam layer 215 and a skin contact layer 216 disposed sequentially outward along the surface of the steering wheel frame.

[0099] Specifically: a semiconductor array layer 212 is disposed on the surface of the interior frame 210. A thermal bridge layer 213 is located on the surface of the semiconductor array layer 212, a thermally conductive integrated sensing layer 214 is located on the surface of the thermal bridge layer 213, a composite foam layer 215 covers the thermally conductive integrated sensing layer 214, and a skin contact layer 216 is wrapped around the composite foam layer 215.

[0100] See Figure 3 As shown, the semiconductor array layer 212 has a plurality of semiconductor units 2121 arranged in an array. The semiconductor unit 2121 can be a microchip, and in this embodiment, it can specifically be a bismuth telluride (Bi2Te3) based micro thermoelectric chip, and the thickness of the bismuth telluride (Bi2Te3) based micro thermoelectric chip is 2.0 mm-3.0 mm.

[0101] The purpose of the thermal bridge layer 213 is to rapidly diffuse heat laterally. Therefore, the thermal bridge layer is required to have a high equivalent in-plane thermal conductivity. In this embodiment, the equivalent in-plane thermal conductivity of the thermal bridge layer 213 is greater than or equal to a preset equivalent in-plane thermal conductivity, which can be 1500 W / m·K. To achieve the lateral heat dissipation function of the thermal bridge layer, in this embodiment, the thermal bridge layer 213 can be a cavity heat exchanger. The cavity heat exchanger can have an ultra-thin structure, specifically: a thickness ≤ 1.5 mm. In addition, the equivalent in-plane thermal conductivity of the cavity heat exchanger is > 1500 W / m·K. In another embodiment, the thermal bridge layer 213 can be a oriented pyrolytic graphite sheet. The oriented pyrolytic graphite sheet can be a highly oriented pyrolytic graphite sheet with a thickness of 0.5–1.0 mm. In practical applications, each semiconductor unit has a hot end surface. During installation, the cavity heat spreader or directional pyrolytic graphite sheet is attached to the hot end surface of the semiconductor unit through thermally conductive silicone. The thermal conductivity of the thermally conductive silicone can be greater than or equal to 8 W / m·K.

[0102] In this embodiment, the thermally conductive integrated sensing layer 214 includes a flexible silicone film layer with a thickness of 5mm-10mm. One function of the thermally conductive integrated sensing layer 214 is to conduct heat. To achieve heat dissipation, thermally conductive particles can be filled in the flexible silicone film layer. Specifically, the thermally conductive particles can be boron nitride micron or nanoparticles, or alumina micron or nanoparticles. The thermally conductive particles are uniformly dispersed in the flexible silicone film layer. In specific applications, the thermally conductive particles can be distributed in multiple layers within the flexible silicone film layer.

[0103] In this embodiment, the thermally conductive integrated sensing layer 214 can also function as a temperature and pressure sensing layer. Specifically, a pressure sensing layer and a temperature sensing layer can be provided in the flexible silicone film layer, wherein the pressure sensing layer and the temperature sensing layer can extend along the extension direction of the plane of the silicone film layer. See also... Figure 4 As shown, the pressure sensing layer contains multiple pressure sensing units 2141 arranged in an array. The function of each pressure sensing unit is to detect the gripping pressure. (See Figure 2141 for details.) Figure 5 As shown, this represents the pressure value felt by the user when holding the interior temperature detection device. By detecting the pressure value, the area pressed by the user can be accurately determined, i.e., the area held by the user. Multiple temperature sensing units 2142 arranged in an array are disposed in the temperature sensing layer. The function of the temperature sensing units is to detect the temperature of the thermally conductive integrated sensing layer 214. Since there is only a composite foam layer and a skin contact layer outside the thermally conductive integrated sensing layer 214, the temperature of the thermally conductive integrated sensing layer is almost equivalent to the temperature of the skin contact layer. Therefore, by detecting the temperature of the temperature sensing units in the thermally conductive integrated sensing layer, the temperature of the skin contact layer can be characterized.

[0104] In the embodiments of this application, see Figure 1 and Figure 2 As shown, the composite foam layer 215 includes: a dense support layer 2151 and a functional inner layer 2152 bonded together, wherein the dense support layer 2151 is a microporous dense structure with first micropores, and the functional inner layer 2152 is a microporous support structure with second micropores. (See also...) Figure 2 As shown, thermally conductive sheets are dispersed in the second micropore 2153, and the average pore diameter of the second micropore is larger than the average pore diameter of the first micropore. In this embodiment, the thickness of the composite foam layer can be 4.0-6.0 mm.

[0105] In practical applications, the composite foam layer is integrally formed through a mold foaming process. It includes a dense support layer on top, with a thickness of 1.0-2.0 mm, made of polyurethane (PU) or thermoplastic polyolefin (TPO), featuring a microporous and dense structure to provide excellent surface support and a smooth feel, preventing collapse under pressure. The functional inner layer, with a thickness of 3.0-4.0 mm, is filled beneath the dense support layer, with thermally conductive sheets dispersed within it. In the embodiments of this application, a polymer foam matrix doped with 1-5 wt% sheet graphene or hexagonal boron nitride (h-BN) can be used, with an overall thermal conductivity ≥0.8 W / m·K. This functional inner layer is used to rapidly homogenize the point heat source of the semiconductor unit into a surface heat source.

[0106] In this embodiment, the interior temperature control device 100 further includes a control unit 217 electrically connected to a plurality of semiconductor units 2121, a plurality of pressure sensing units 2141, and a plurality of temperature sensing units 2142. The control unit 217 can be a microprocessor unit. In this embodiment, a plurality of terminals are provided in the semiconductor array layer and the thermally conductive integrated sensing layer, so that the control unit can be electrically connected to the plurality of semiconductor units 2121, the plurality of pressure sensing units 2141, and the plurality of temperature sensing units 2142 via the terminals.

[0107] The control unit 217 can determine the pressure contact area and the non-pressure contact area based on the pressure sensing signals of the multiple pressure sensing units, and control the multiple semiconductor units to heat up respectively, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature; or, control the multiple semiconductor units to cool down respectively, so that the temperature of the non-pressure contact area cools down to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

[0108] See Figure 6 As shown in the embodiment of this application, the interior temperature control device 100 is circumferentially disposed on the steering wheel frame, and is provided with a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foam layer and a skin contact layer respectively in the inward and outward direction. See [reference] Figure 6 As shown, the steering wheel frame includes a first surface and a second surface opposite to the first surface. The first surface faces the driver, and the second surface faces away from the driver.

[0109] During installation, the semiconductor array layer, thermal bridge layer, and thermally conductive integrated sensing layer are all disposed in the half-circumferential region corresponding to the second surface, while the composite foam layer and the skin contact layer are disposed circumferentially on the steering wheel frame, and the composite foam layer and the skin contact layer wrap around the steering frame.

[0110] This interior temperature control device incorporates a thermal bridge layer, a thermally conductive integrated sensing layer, and a composite foam layer on a semiconductor array layer. The thermal bridge layer conducts heat or cold from point sources within the semiconductor units laterally. Similarly, the thermally conductive particles in the thermally conductive integrated sensing layer and the thermally conductive sheets in the composite foam layer also contribute to lateral conduction. This transforms the heat or cooling generated by the point sources of the semiconductor into a lateral, uniformly heated surface source or cold source, preventing overheating or undercooling at a single location or point, thus avoiding cold or hot spots in contact with the human body. Furthermore, the pressure sensing signal from the pressure sensing unit identifies pressure contact areas and non-pressure contact areas. Heating the pressure contact areas using individual semiconductor units can lower the temperature of the pressure contact areas below a preset heating temperature; alternatively, multiple semiconductor units can be controlled to cool down individually, ensuring the temperature of the pressure contact areas exceeds a preset cooling temperature. In this way, while equalizing the temperature of the area that the user touches, it is also considered that continuous pressing may cause internal overheating or overcooling. Therefore, by separately controlling the temperature difference between the semiconductor unit corresponding to the pressure contact area and the non-pressure contact area, the pressure contact area can be appropriately cooled during heating and appropriately heated during cooling, thereby further reducing the occurrence of cold spots or hot spots.

[0111] In this embodiment of the application, a mounting groove is provided on the second surface of the steering wheel frame, and the semiconductor array layer, thermal bridge layer and thermally conductive integrated sensing layer are all disposed in the mounting groove. The surface of the thermally conductive integrated sensing layer is flush with the surface of the steering wheel frame and forms a circumferential surface.

[0112] In this embodiment of the application, a flexible aerogel layer 414 is provided between the steering wheel frame and the composite foam layer in the first corresponding area.

[0113] In one embodiment of this application, the interior temperature control device is disposed on the circumference and horizontal axis of the steering wheel frame. That is, the interior temperature control device covers the entire area of ​​the steering wheel frame.

[0114] In another embodiment of this application, the steering wheel is provided with temperature control zones at the 3 o'clock and 9 o'clock positions, and each of the temperature control zones is provided with the interior temperature control device.

[0115] This application also provides a car, including the steering wheel as described in the foregoing embodiments.

[0116] The interior temperature control device on the steering wheel of this vehicle incorporates a thermal bridge layer, a thermally conductive integrated sensing layer, and a composite foam layer on a semiconductor array layer. The thermal bridge layer conducts heat or cold from point sources within the semiconductor units laterally, as do the thermally conductive particles in the integrated sensing layer and the thermally conductive sheets in the composite foam layer. This transforms the heat or cooling generated by the point sources of the semiconductor into a lateral, uniformly heated surface source or cold source, preventing overheating or undercooling at a single location or point, thus avoiding cold or hot spots in contact with the human body. Furthermore, the pressure sensing signal from the pressure sensing unit identifies pressure contact areas and non-pressure contact areas. Heating the pressure contact areas using individual semiconductor units can lower the temperature of the pressure contact areas below a preset heating temperature; alternatively, controlling the cooling of multiple semiconductor units individually can raise the temperature of the pressure contact areas above a preset cooling temperature. In this way, while equalizing the temperature of the area that the user touches, it is also considered that continuous pressing may cause internal overheating or overcooling. Therefore, by separately controlling the temperature difference between the semiconductor unit corresponding to the pressure contact area and the non-pressure contact area, the pressure contact area can be appropriately cooled during heating and appropriately heated during cooling, thereby further reducing the occurrence of cold spots or hot spots.

[0117] like Figure 10 As shown, the vehicle includes: a standardized on-board interface 23, a distributed intelligent control center 22, and an interior temperature control device 100, with the control unit of the interior temperature control device 100 located in the distributed intelligent control center 22.

[0118] The standardized vehicle interface 23 may include: a communication interface, an integrated CAN or LIN bus control unit, an automotive-grade waterproof connection unit, and provide 12V power supply, grounding, CAN / L and sensor unit signal lines to exchange status and commands with the vehicle cockpit domain control unit.

[0119] The distributed intelligent control hub 22 employs an independent electronic control box, whose core components include: a power management module that provides a stable current / voltage output (e.g., 12V / 5A) to drive the TEC array and power the heating film and sensing circuits; a multi-channel temperature acquisition module that reads signals from multiple platinum resistance thermometers (Pt100) or thermistors in the integrated sensing layer; an adaptive control processing unit that runs a model predictive control (MPC) algorithm, dynamically adjusting the direction and magnitude of the TEC current and controlling the start and stop of the auxiliary heating film based on temperature feedback, ambient humidity (obtainable via the CAN bus), and a preset comfort curve; and a communication interface that integrates a CAN or LIN bus control unit, using an automotive-grade waterproof connection unit, providing 12V power, ground, CAN / L, and sensing unit signal lines to exchange status and commands with the vehicle cabin domain control unit.

[0120] Manual and automatic control are available. Users can manually set the target temperature, start time, and select the mode (such as "rapid cooling" or "warm mode") in advance through a dedicated UI interface developed by the mobile car control APP.

[0121] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linkage" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances. Furthermore, in the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0122] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

[0123] Although embodiments of this application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the appended claims and their equivalents.

Claims

1. An interior temperature control device, disposed on the interior frame, characterized in that, The interior temperature control device includes: a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foam layer, and a skin contact layer sequentially disposed outward from the surface of the interior frame. The semiconductor array layer contains multiple semiconductor units arranged in an array. The thermal bridge layer covers the semiconductor array layer; The thermally conductive integrated sensing layer is provided with a pressure sensing layer and a temperature sensing layer along its extension direction. The pressure sensing layer contains multiple pressure sensing units, and the temperature sensing layer contains multiple temperature sensing units. The composite foam layer includes: a dense support layer and a functional inner layer bonded together; The interior temperature control device further includes: a control unit electrically connected to multiple semiconductor units, multiple pressure sensing units, and multiple temperature sensing units respectively. The control unit determines the pressure contact area and the non-pressure contact area based on the pressure sensing signals of the multiple pressure sensing units, and controls the multiple semiconductor units to heat up respectively, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature; or, controls the multiple semiconductor units to cool down respectively, so that the temperature of the non-pressure contact area cools down to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

2. The interior temperature control device according to claim 1, characterized in that, The control unit controls all semiconductor units to heat according to a first heating signal, so that the temperature of the skin contact layer rises to a preset heating temperature; the control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a second heating signal, so that the temperature of the pressure contact area is lower than the preset heating temperature; or, the control unit controls all semiconductor units to cool according to a first cooling signal, so that the temperature of the skin contact layer cools to a preset cooling temperature; the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool according to a second cooling signal, so that the temperature of the pressure contact area is higher than the preset cooling temperature.

3. The interior temperature control device according to claim 2, characterized in that, The control unit defines multiple rings of semiconductors in the pressure contact area along the outward-inward direction. When the control unit controls at least one semiconductor unit corresponding to the pressure contact area to be heated according to the second heating signal, the temperature interval between different rings of semiconductor units along the outward-inward direction decreases; or, the control unit controls at least one semiconductor unit corresponding to the pressure contact area to be cooled according to the second cooling signal, and the temperature interval between different rings of semiconductor units along the outward-inward direction increases.

4. The interior temperature control device according to claim 1, characterized in that, The control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a third signal and multiple semiconductor units in the non-pressure contact area to heat according to a fourth signal, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature; or, controls at least one semiconductor unit corresponding to the pressure contact area to cool according to a fourth signal and multiple semiconductor units in the non-pressure contact area to cool according to a fifth signal, so that the temperature of the non-pressure contact area cools to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

5. The interior temperature control device according to claim 1, characterized in that: The semiconductor unit includes a base microchip, and the semiconductor array layer includes a metal conductive circuit substrate, wherein... Multiple base microchips are fixed to a metal conductive circuit substrate by solder, and the multiple base microchips are arranged in an array on the metal conductive circuit substrate; The control unit is electrically connected to the input / output terminals on the metal conductive circuit substrate to achieve electrical connection with each base microchip respectively.

6. The interior temperature control device according to claim 1, characterized in that, The thermal bridge layer includes a cavity heat spreader or a directional pyrolytic graphite sheet, wherein the cavity heat spreader or the directional pyrolytic graphite sheet is bonded to the hot end surface of the semiconductor unit via thermally conductive silicone.

7. The interior temperature control device according to claim 6, characterized in that, The dense support layer includes a microporous dense structure with a first micropore, and the functional inner layer includes a microporous support structure with a second micropore, wherein heat-conducting sheets are dispersed in the second micropore; the average pore diameter of the second micropore is greater than the average pore diameter of the first micropore.

8. The interior temperature control device according to claim 1, characterized in that, The thermally conductive integrated sensing layer includes a flexible silicone film layer, which is filled with thermally conductive particles, and a pressure sensing layer and a temperature sensing layer are respectively disposed along the extension direction of the flexible silicone film layer. And / or, The thermally conductive integrated sensing layer also includes an auxiliary heating layer, which has multiple arrayed resistance heating units. The control unit is electrically connected to each of the resistance heating units. When the control unit controls the remaining semiconductor units in the non-pressure contact area to heat up, if the temperature of the non-pressure contact area does not rise to the preset heating temperature value within a preset time, the control unit controls the resistance heating units to heat up. When the temperature of the non-pressure contact area rises to the preset heating temperature value, the control unit controls the resistance heating units to stop heating.

9. The interior temperature control device according to claim 1, characterized in that, The interior temperature control device further includes a thermal interface layer, which is located between the semiconductor array layer and the interior frame; the thermal interface layer is a high thermal conductivity silicone grease or a phase change thermal pad.

10. An interior temperature control method, applied to the interior temperature control device according to any one of claims 1-9, characterized in that, The method includes: The control unit acquires pressure sensing signals from multiple pressure sensing units; and determines the pressure contact area based on the pressure sensing signals, and determines the area outside the pressure contact area as the non-pressure contact area. The control unit controls the heating of the multiple semiconductor units respectively, so that the temperature of the non-pressure contact area rises to a preset heating temperature value, and the temperature of the pressure contact area is lower than the preset heating temperature; Alternatively, the control unit controls multiple semiconductor units to cool down respectively, so that the temperature of the non-pressure contact area is reduced to a preset cooling temperature, and the temperature of the pressure contact area is higher than the preset cooling temperature.

11. The temperature control method according to claim 10, characterized in that, The control unit controls the heating of multiple semiconductor units respectively, including: the control unit controls all semiconductor units to heat according to a first heating signal to raise the temperature of the skin contact layer to a preset heating temperature; the control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a second heating signal to lower the temperature of the pressure contact area below the preset heating temperature. Alternatively, the control unit controls multiple semiconductor units to cool down respectively, including: the control unit controls all semiconductor units to cool down according to a first cooling signal, so that the temperature of the skin contact layer is cooled down to a preset cooling temperature; the control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool down according to a second cooling signal, so that the temperature of the pressure contact area is higher than the preset cooling temperature.

12. The temperature control method according to claim 11, characterized in that, The control unit controls all semiconductor units to cool down according to the first cooling signal, including: Obtain the ambient humidity data of the vehicle's current environment; Calculate the current dew point temperature based on the ambient humidity data; Determine whether the preset cooling temperature is higher than the dew point temperature; If the preset cooling temperature is higher than the dew point temperature, all semiconductor units are controlled to cool down according to the first cooling signal. If the preset cooling temperature is lower than the dew point temperature, obtain the first current value of the first cooling signal; The first current value is reduced to obtain a second current value, and the cooling signal corresponding to the second current value is pulse-width modulated; the adjusted cooling signal is used to control the semiconductor unit so that the temperature of the skin contact layer is cooled to the dew point temperature.

13. The temperature control method according to claim 11, characterized in that, The control unit defines multiple rings of semiconductors in the pressure contact area along the outward-inward direction. When the control unit controls at least one semiconductor unit corresponding to the pressure contact area to be heated according to the second heating signal, the temperature interval between different rings of semiconductor units decreases along the outward-inward direction. or, The control unit defines multiple rings of semiconductors in the pressure contact area along the outward-inward direction. The control unit controls at least one semiconductor unit corresponding to the pressure contact area to cool down according to the second cooling signal, and the temperature interval between different rings of semiconductor units increases along the outward-inward direction.

14. The temperature control method according to claim 11, characterized in that, The control unit controls at least one semiconductor unit corresponding to the pressure contact area to heat according to a third signal and multiple semiconductor units in the non-pressure contact area to heat according to a fourth signal, so that the temperature of the non-pressure contact area rises to a preset heating temperature value and the temperature of the pressure contact area is lower than the preset heating temperature; or, controls at least one semiconductor unit corresponding to the pressure contact area to cool according to a fourth signal and multiple semiconductor units in the non-pressure contact area to cool according to a fifth signal, so that the temperature of the non-pressure contact area cools to a preset cooling temperature and the temperature of the pressure contact area is higher than the preset cooling temperature.

15. An interior panel, comprising an interior frame, characterized in that, include: The interior temperature control device as described in any one of claims 1-9, disposed on the interior frame, comprises: a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foaming layer, and a skin contact layer disposed sequentially outward along the surface of the interior frame.

16. A steering wheel, comprising: A steering wheel frame, characterized in that it includes: an interior temperature control device as described in any one of claims 1-9 disposed on the steering wheel frame, wherein the interior temperature control device includes: a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foaming layer and a skin contact layer disposed sequentially outward along the surface of the steering wheel frame.

17. The steering wheel according to claim 16, characterized in that, The interior temperature control device is arranged circumferentially on the steering wheel frame, and is provided with a semiconductor array layer, a thermal bridge layer, a thermally conductive integrated sensing layer, a composite foam layer and a skin contact layer from the inside out.

18. The steering wheel according to claim 16, characterized in that, The steering wheel frame includes: a first surface and a second surface opposite to the first surface, wherein the first surface faces the driver's direction; The semiconductor array layer, thermal bridge layer, and thermally conductive integrated sensing layer are all disposed in the corresponding half-circumference region of the second surface. The composite foam layer and the skin contact layer are arranged circumferentially on the steering wheel frame.

19. The steering wheel according to claim 18, characterized in that, A mounting groove is provided on the second surface of the steering wheel frame. The semiconductor array layer, thermal bridge layer, and thermally conductive integrated sensing layer are all disposed in the mounting groove. The surface of the thermally conductive integrated sensing layer is flush with the surface of the steering wheel frame and forms a circumferential surface.

20. A car, characterized in that, Including the steering wheel as described in any one of claims 16-19.

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