Electronic component

Abstract

This invention provides an electronic component that can suppress the formation of cracks. The elastic wave device (100) includes: a substrate (10); an elastic wave element (50) disposed on the substrate (10); a cover (30) disposed on the substrate (10) with a gap (22) that exposes the elastic wave element (50), the coefficient of linear expansion of the cover (30) being different from that of the substrate (10); a first frame-shaped portion (40) disposed between the substrate (10) and the cover (30), which surrounds the elastic wave element (50) when viewed from above, the first frame-shaped portion (40) having a thickness greater than 1 / 2 of the distance (H) between the substrate (10) and the cover (30); and a second frame-shaped portion (42) disposed between the substrate (10) and the first frame-shaped portion (40), the second frame-shaped portion (42) having a greater Young's modulus than the first frame-shaped portion (40), and the thickness of the second frame-shaped portion (42) being 3 μm or more.

Description

Technical Field

[0001] This invention relates to electronic components. Background Technology

[0002] Electronic components are known to be configured to seal components disposed on a substrate within a gap. For example, electronic components are known to have a device chip flip-chip mounted on a substrate, and the device chip is surrounded by solder, thereby sealing the component within the gap between the substrate and the device chip (e.g., Patent Documents 1 and 2). Electronic components are also known to seal the component within the gap between the substrate and the cover by providing a frame surrounding the component on the substrate and providing a cover on the frame (e.g., Patent Document 3).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2020-145596

[0004] Patent Document 2: Japanese Patent Application Publication No. 2017-157922

[0005] Patent Document 3: Japanese Patent Application Publication No. 2021-34746

[0006] For example, when temperature changes are applied to electronic components, such as during temperature cycling tests, cracks sometimes form in the enclosure surrounding the component. When cracks occur, the seal that prevents the component from being sealed in the gaps may be compromised. Summary of the Invention

[0007] The present invention was made in view of the above-mentioned problems, and its purpose is to suppress the formation of cracks.

[0008] The present invention is an electronic component comprising: a substrate; an element disposed on the substrate; a cover disposed on the substrate with a gap exposing the element, the cover having a different coefficient of linear expansion than the substrate; a first frame-like portion disposed between the substrate and the cover, surrounding the element when viewed from above, the first frame-like portion having a thickness greater than 1 / 2 the distance between the substrate and the cover; and a second frame-like portion disposed between the substrate and the first frame-like portion, the second frame-like portion having a greater Young's modulus than the first frame-like portion, and a thickness of 3 μm or more.

[0009] In the above structure, the difference between the linear expansion coefficient of the first frame portion and the linear expansion coefficient of the second frame portion is less than the difference between the linear expansion coefficient of the first frame portion and the linear expansion coefficient of the substrate.

[0010] In the above structure, the second frame-shaped portion can be formed of an inorganic insulating material.

[0011] In the above structure, the second frame-shaped portion can be formed of the same material as the substrate.

[0012] In the above structure, the element can be configured as an elastic wave element.

[0013] In the above structure, the electronic component may have a piezoelectric layer disposed on the substrate, the elastic wave element may be disposed on the piezoelectric layer, and the second frame-shaped portion may be formed of the same material as the piezoelectric layer.

[0014] In the above structure, the first frame-shaped portion can be formed of copper, and the second frame-shaped portion can be formed of aluminum oxide or nickel.

[0015] In the above structure, it can be configured such that, in cross-section, the lower end of the gap side of the first frame portion and the upper end of the gap side of the second frame portion are aligned in the stacking direction of the first frame portion and the second frame portion.

[0016] In the above structure, it can be configured such that, in cross-section, the lower end of the gap side of the first frame portion is located on the outer side of the second frame portion, which is closer to the upper end of the gap side of the second frame portion.

[0017] In the above structure, it can be configured such that, in cross-section, the lower end of the gap side of the first frame portion is located closer to the inner side of the second frame portion than the upper end of the gap side of the second frame portion, and the lower end of the side of the first frame portion opposite to the gap is located closer to the outer side of the second frame portion than the upper end of the side of the second frame portion opposite to the gap.

[0018] According to the present invention, crack formation can be suppressed. Attached Figure Description

[0019] Figure 1 (a) is a cross-sectional view of the elastic wave device of Example 1. Figure 1 (b) is a plan view.

[0020] Figure 2 (a) is a plan view of the elastic wave element of Example 1. Figure 2 (b) is a cross-sectional view of another elastic wave element used in Example 1.

[0021] Figure 3 (a) to Figure 3 (d) is a cross-sectional view showing the manufacturing method of the elastic wave device of Embodiment 1.

[0022] Figure 4 (a) to Figure 4(d) is a cross-sectional view showing a method for manufacturing an elastic wave device according to a variation of Example 2 of Embodiment 1.

[0023] Figure 5 (a) is a cross-sectional view of the elastic wave device of the comparative example. Figure 5 (b) is a cross-sectional view showing the problem generated in the elastic wave device of the comparative example.

[0024] Figure 6 (a) is a plan view of models A, B, and C used in the simulation. Figure 6 (b) is a sectional view of models A and B. Figure 6 (c) is a sectional view of model C.

[0025] Figure 7 (a) and Figure 7 (b) is a graph showing the simulation results of the strain generated in the frame section for models A and C.

[0026] Figure 8 (a) is a graph showing the simulation results of the cumulative strain of models A and C. Figure 8 (b) is a graph showing the simulation results of the cumulative strain of models B and C.

[0027] Figure 9 This is a graph showing the simulation results of the magnitude of the maximum strain generated in the frame-like part of model A.

[0028] Figure 10 (a) to Figure 10 (i) is a cross-sectional view of the model used in Simulation 3.

[0029] Figure 11 (a) to Figure 11 (i) is a cross-sectional view of the model used in Simulation 4.

[0030] Figure 12 (a) and Figure 12 (b) is a cross-sectional view showing examples of other shapes of the first frame-like portion. Figure 12 (c) and Figure 12 (d) is a cross-sectional view showing examples of other shapes of the second frame section.

[0031] Figure 13 (a) is the circuit diagram of the filter in Example 2. Figure 13 (b) is a circuit diagram of the duplexer of a modified example of Example 2.

[0032] Label Explanation

[0033] 10: Substrate; 12, 12a: Piezoelectric layer; 14: Terminal; 16: Via wiring; 18: Frame; 20: Wiring; 30: Cover; 40: First frame-shaped portion; 42: Second frame-shaped portion; 44: Sealing layer; 46: Barrier layer; 48: Solder layer; 50, 50a: Elastic wave element; 51: IDT; 52: Reflector; 53: Comb electrode; 54: Electrode finger; 55: Busbar; 56: Lower electrode; 57: Upper electrode; 58: Gap; 59: Resonant region; 60 62: Transmitting filter; 65: Receiving filter; 80: Crack; 81: Substrate; 82: Frame-like part; 83: Cover; 84: Region; 85a, 85b: Side; 86a, 86b: Side; 87a: Lower inner end; 87b: Lower outer end; 88a: Upper inner end; 88b: Upper outer end; 90: Recess; 91: Protrusion; 92: Barrier layer; 93: Solder layer; 100, 500: Elastic wave device; 200: Filter; 210: Duplexer. Detailed Implementation

[0034] Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described using an elastic wave device as an example.

[0035]

Example 1

[0036] Figure 1 (a) is a cross-sectional view of the elastic wave device 100 of Embodiment 1. Figure 1 (b) is a planar view. The stacking direction of the substrate 10 and the piezoelectric layer 12 is defined as the Z-direction, and the directions perpendicular to each other in the planar direction of the substrate 10 are defined as the X and Y directions. Figure 1 In (b), the substrate 10, the piezoelectric layer 12, the frame 18 and the elastic wave element 50 are illustrated. To make the drawing clear, the piezoelectric layer 12, the frame 18 and the elastic wave element 50 are marked with shaded lines.

[0037] like Figure 1 (a) and Figure 1 As shown in (b), a piezoelectric layer 12 is bonded to the upper surface of the substrate 10. The substrate 10 is, for example, a sapphire substrate. Alternatively, the substrate 10 may be other than a sapphire substrate, such as a silicon substrate, spinel substrate, crystal substrate, quartz substrate, silicon carbide substrate, diamond-like carbon substrate, LTCC substrate, HTCC substrate, FRP substrate, lithium tantalate substrate, or lithium niobate substrate.

[0038] The piezoelectric layer 12 is, for example, a single-crystal lithium tantalate (LiTaO3) layer or a single-crystal lithium niobate (LiNbO3) layer, such as a rotary Y-cut X-propagation lithium tantalate layer or a rotary Y-cut X-propagation lithium niobate layer. An insulating layer, which is a single-layer film or a laminated film of silicon oxide, aluminum oxide, and / or aluminum nitride, may also be provided between the substrate 10 and the piezoelectric layer 12. In this way, the piezoelectric layer 12 is directly or indirectly bonded to the substrate 10.

[0039] An elastic wave element 50 is disposed on the piezoelectric layer 12. The elastic wave element 50 is, for example, a surface acoustic wave element. A via wiring 16 is disposed on the substrate 10, extending from the upper surface to the lower surface. Wiring 20 is disposed on the upper surface from the elastic wave element 50 to the via wiring 16. The elastic wave element 50 and the via wiring 16 are electrically connected through the wiring 20. A terminal 14 connected to the via wiring 16 is disposed on the lower surface of the substrate 10. The terminal 14 is a pad for electrically connecting the elastic wave element 50 to an external source. The elastic wave element 50 is electrically connected to the terminal 14 via the wiring 20 and the via wiring 16. "Electrically connected" basically refers to the conduction of direct current, but also allows the conduction of signals (alternating current) in the frequency band of approximately 500MHz to 2500MHz. The terminal 14, the via wiring 16, and the wiring 20 are, for example, metal layers containing titanium, copper, aluminum, platinum, nickel, and / or gold.

[0040] The piezoelectric layer 12 is not disposed in the peripheral region of the substrate 10. A frame 18 is disposed on the substrate 10 in a manner that surrounds the piezoelectric layer 12 and the elastic wave element 50 when viewed from the +Z direction. The frame 18 has a first frame-shaped portion 40, a second frame-shaped portion 42, a bonding layer 44, a barrier layer 46, and a solder layer 48. The first frame-shaped portion 40 is disposed on the substrate 10 in a manner that surrounds the piezoelectric layer 12 and the elastic wave element 50. The second frame-shaped portion 42 is disposed between the first frame-shaped portion 40 and the substrate 10 in a manner that surrounds the piezoelectric layer 12 and the elastic wave element 50. The bonding layer 44 is disposed between the first frame-shaped portion 40 and the second frame-shaped portion 42 to improve the adhesion between the first frame-shaped portion 40 and the second frame-shaped portion 42. The barrier layer 46 is disposed between the first frame-shaped portion 40 and the solder layer 48 to suppress solder diffusion. A cover 30 is bonded to the solder layer 48. Thus, the elastic wave element 50 is sealed in the gap 22 formed between the substrate 10 and the cover 30.

[0041] The first frame-shaped portion 40 is the thickest layer in the frame 18. The first frame-shaped portion 40 is formed of a metal such as copper (Cu) and has a thickness greater than half the distance H between the substrate 10 and the cover 30. For example, the thickness of the first frame-shaped portion 40 is 14 μm. The first frame-shaped portion 40 can be the layer with the highest conductivity in the frame 18. Since the first frame-shaped portion 40 is the thickest and most conductive metal layer in the frame 18, the resistance of the frame 18 can be reduced. From the viewpoint of reducing the resistance of the frame 18, the thickness of the first frame-shaped portion 40 is preferably 60% or more of the distance H, more preferably 70% or more.

[0042] The second frame-shaped portion 42 is formed of a material with a Young's modulus greater than that of the first frame-shaped portion 40, such as an inorganic insulating material like alumina (Al2O3). The Young's modulus of Cu is approximately 110 GPa, while that of Al2O3 is approximately 157 GPa. The thickness of the second frame-shaped portion 42 is, for example, 3 μm or more. The bonding layer 44 is, for example, a titanium layer with a thickness of 0.05 μm. The barrier layer 46 is, for example, a nickel layer with a thickness of 2.5 μm. The solder layer 48 is, for example, a gold-tin solder layer with a thickness of 4 μm. The cover 30 is, for example, a Kova alloy plate, having a different coefficient of linear expansion than the substrate 10. Alternatively, the cover 30 may also include a metal plate other than a Kova alloy plate, a semiconductor plate such as a silicon plate, an insulating plate such as sapphire, or a piezoelectric plate such as a lithium tantalate plate or a lithium niobate plate.

[0043] The difference between the coefficient of linear expansion of the first frame portion 40 and the coefficient of linear expansion of the second frame portion 42 is less than the difference between the coefficient of linear expansion of the first frame portion 40 and the coefficient of linear expansion of the substrate 10. For example, when the first frame portion 40 is formed of Cu, the second frame portion 42 is formed of Al2O3, and the substrate 10 is a sapphire substrate, the coefficient of linear expansion of Cu is 16.4 ppm / ℃, the coefficient of linear expansion of Al2O3 is 7.7 ppm / ℃, and the coefficient of linear expansion of sapphire is 7.4 ppm / ℃.

[0044] The widths of the first frame-shaped portion 40 and the second frame-shaped portion 42 are, for example, 10 μm to 40 μm. The spacing H between the substrate 10 and the cover 30 is, for example, 20 μm to 40 μm. The thickness of the substrate 10 is, for example, 50 μm to 300 μm. The thickness of the piezoelectric layer 12 is, for example, 0.5 μm to 30 μm. The thickness of the cover 30 is, for example, 10 μm to 200 μm.

[0045] Figure 2 (a) is a plan view of the elastic wave element 50 of Embodiment 1. Figure 2As shown in (a), the elastic wave element 50 is a surface acoustic wave resonator. An IDT (Interdigital Transducer) 51 and a reflector 52 are disposed on the piezoelectric layer 12. The IDT 51 has a pair of opposing comb electrodes 53. The comb electrodes 53 have multiple electrode fingers 54 and busbars 55 connected to the multiple electrode fingers 54. The multiple electrode fingers 54 excite elastic waves to the piezoelectric layer 12. The reflector 52 is disposed on both sides of the IDT 51 to reflect the elastic waves excited by the electrode fingers 54. The spacing of the electrode fingers 54 of one of the comb electrodes 53 is approximately equal to the wavelength λ of the elastic wave. The average spacing D of the multiple electrode fingers 54 is approximately twice the wavelength λ of the elastic wave. The average spacing D can be calculated by dividing the length of the IDT 51 in the direction of the electrode fingers 54 by the number of electrode fingers 54. The IDT 51 and the reflector 52 are formed, for example, of a metal film such as aluminum, copper, or molybdenum. A protective film or temperature compensation film covering the IDT 51 and the reflector 52 can also be provided on the piezoelectric layer 12. The comb electrode 53 can also have dummy electrode fingers.

[0046] Figure 2 (b) is a cross-sectional view of another elastic wave element 50a used in Embodiment 1. Figure 2 As shown in (b), in addition to the elastic wave element 50 serving as a surface acoustic wave resonator, an elastic wave element 50a serving as a piezoelectric thin film resonator can also be provided. The elastic wave element 50a has a piezoelectric layer 12a disposed on the substrate 10 and a lower electrode 56 and an upper electrode 57 sandwiching the piezoelectric layer 12a. A gap 58 is formed between the lower electrode 56 and the substrate 10. The region sandwiching at least a portion of the piezoelectric layer 12a and facing the lower electrode 56 and the upper electrode 57 is a resonant region 59. In the resonant region 59, the lower electrode 56 and the upper electrode 57 excite elastic waves to the piezoelectric layer 12a. The lower electrode 56 and the upper electrode 57 are, for example, metal films containing ruthenium films. The piezoelectric layer 12a is, for example, an aluminum nitride layer, a zinc oxide layer, a single-crystal lithium tantalate layer, or a single-crystal lithium niobate layer. An acoustic reflective film that reflects the elastic waves can also be provided instead of the gap 58.

[0047] [Manufacturing Method]

[0048] Figure 3 (a) to Figure 3 View (d) is a cross-sectional view showing a method for manufacturing the elastic wave device 100 of Embodiment 1. Figure 3As shown in (a), a via is formed by irradiating the upper surface of the substrate 10 with a laser, and a metal layer such as copper is formed within the via by electroplating. Then, the metal layer is planarized using CMP (Chemical Mechanical Polishing) to expose the upper surface of the substrate 10, and via wiring 16 is formed on the substrate 10. At this stage, the via wiring 16 does not penetrate the substrate 10. Next, a piezoelectric layer 12 is bonded to the upper surface of the substrate 10 at room temperature using a surface activation method. The substrate 10 and the piezoelectric layer 12 can be directly bonded through an amorphous layer or the like (a few nm apart), or indirectly bonded through an insulating layer. Afterward, the piezoelectric layer 12 is polished using CMP to achieve the desired thickness.

[0049] like Figure 3 As shown in (b), a portion of the piezoelectric layer 12 is removed using an etching method. Thus, the piezoelectric layer 12 in the peripheral region of the substrate 10 is removed. Next, an elastic wave element 50 is formed on the piezoelectric layer 12. The elastic wave element 50 is formed using photolithography and etching. Wiring 20 connected to the elastic wave element 50 is formed. The wiring 20 is formed using a stripping method.

[0050] like Figure 3 As shown in (c), a second frame-shaped portion 42 is formed on the substrate 10 in a manner that surrounds the piezoelectric layer 12. The second frame-shaped portion 42 is formed by a peeling method in which a film is formed on a patterned photoresist using the material used to form the second frame-shaped portion 42, and then the photoresist is removed. The film formation is performed using sputtering, CVD (Chemical Vapor Deposition), or vacuum evaporation. Then, a bonding layer 44, a first frame-shaped portion 40, a barrier layer 46, and a solder layer 48 are formed on the second frame-shaped portion 42. Thus, the frame 18 is formed. The bonding layer 44, the first frame-shaped portion 40, the barrier layer 46, and the solder layer 48 are formed using electroplating and / or sputtering. Next, a cover 30 is bonded to the solder layer 48. Thus, the elastic wave element 50 is sealed in the gap 22 between the substrate 10 and the cover 30.

[0051] like Figure 3 As shown in (d), the lower surface of the substrate 10 is polished using the CMP method. As a result, via wiring 16 is exposed from the lower surface of the substrate 10. Terminals 14 connected to the via wiring 16 are formed on the lower surface of the substrate 10. Through the above, the elastic wave device 100 of Embodiment 1 is formed.

[0052] [Variation Example 1]

[0053] In Variation 1 of Example 1, the Young's modulus of the second frame portion 42 remains greater than that of the first frame portion 40, but the difference lies in the fact that the second frame portion 42 is formed of a metallic material such as nickel (Ni). The Young's modulus of Ni is approximately 207 GPa. Therefore, when the first frame portion 40 is formed of Cu (Young's modulus: approximately 110 GPa), the Young's modulus of the second frame portion 42 is greater than that of the first frame portion 40. Furthermore, the coefficient of linear expansion of Ni is approximately 14.0 ppm / °C. Therefore, when the first frame portion 40 is formed of Cu (coefficient of linear expansion: 16.4 ppm / °C) and the substrate 10 is a sapphire substrate (coefficient of linear expansion: 7.4 ppm / °C), the difference between the coefficients of linear expansion of the first frame portion 40 and the second frame portion 42 is less than the difference between the coefficients of linear expansion of the first frame portion 40 and the substrate 10. Furthermore, the coefficient of linear expansion of the second frame-shaped portion 42 is closer to that of the first frame-shaped portion 40 than that of the substrate 10. Other structures are the same as in Embodiment 1, so descriptions are omitted.

[0054] Regarding the elastic wave device of Modification 1 of Embodiment 1, the second frame-shaped portion 42, the close-fitting layer 44, the first frame-shaped portion 40, the barrier layer 46, and the solder layer 48 are all formed using electroplating and / or sputtering methods. Except for this point, the rest are identical to those of Embodiment 1. Figure 3 (a) to Figure 3 (d) is formed using the same method.

[0055] [Variation Example 2]

[0056] In Variation 2 of Example 1, the Young's modulus of the second frame-shaped portion 42 remains greater than that of the first frame-shaped portion 40, but the difference lies in the fact that the second frame-shaped portion 42 is formed of the same material as the piezoelectric layer 12. That is, when the piezoelectric layer 12 is a lithium tantalate (LT) layer, the second frame-shaped portion 42 is formed of LT; when the piezoelectric layer 12 is a lithium niobate (LN) layer, the second frame-shaped portion 42 is formed of LN. The Young's modulus of LT is approximately 254 GPa, and the Young's modulus of LN is approximately 170 GPa. Therefore, when the first frame-shaped portion 40 is formed of Cu (Young's modulus: approximately 110 GPa), the Young's modulus of the second frame-shaped portion 42 is greater than that of the first frame-shaped portion 40. Furthermore, the coefficient of linear expansion of LT is approximately 16.1 ppm / ℃, and the coefficient of linear expansion of LN is approximately 15.4 ppm / ℃. Therefore, when the first frame-shaped portion 40 is formed of Cu (coefficient of linear expansion: 16.4 ppm / ℃) and the substrate 10 is a sapphire substrate (coefficient of linear expansion: 7.4 ppm / ℃), the difference between the coefficient of linear expansion of the first frame-shaped portion 40 and the coefficient of linear expansion of the second frame-shaped portion 42 is less than the difference between the coefficient of linear expansion of the first frame-shaped portion 40 and the coefficient of linear expansion of the substrate 10. Furthermore, the coefficient of linear expansion of the second frame-shaped portion 42 is closer to that of the first frame-shaped portion 40 than that of the substrate 10. Other structures are the same as in Embodiment 1, therefore, illustrations and descriptions are omitted.

[0057] Figure 4 (a) to Figure 4 View (d) is a cross-sectional view showing a method for manufacturing the elastic wave device of Modification 2 of Embodiment 1. Figure 4 As shown in (a), via wiring 16 is formed on substrate 10. Next, piezoelectric layer 12 is bonded to the upper surface of substrate 10 and ground to the desired thickness.

[0058] like Figure 4 As shown in (b), a portion of the piezoelectric layer 12 is removed using an etching method, so that the piezoelectric layer 12 remains in the region where the elastic wave element 50 is formed and the region where the frame 18 is formed. The piezoelectric layer 12 remaining in the region where the frame 18 is formed becomes the second frame portion 42. Next, the elastic wave element 50 is formed on the piezoelectric layer 12. Wiring 20 connected to the elastic wave element 50 is formed.

[0059] like Figure 4 As shown in (c), a bonding layer 44, a first frame-shaped portion 40, a barrier layer 46, and a solder layer 48 are formed on the second frame-shaped portion 42 using electroplating and / or sputtering methods. This forms the frame 18. Next, the cover 30 is bonded to the solder layer 48. Thus, the elastic wave element 50 is sealed in the gap 22 between the substrate 10 and the cover 30.

[0060] like Figure 4As shown in (d), the lower surface of the substrate 10 is ground to expose the via wiring 16 from the lower surface of the substrate 10. A terminal 14 connected to the via wiring 16 is formed on the lower surface of the substrate 10. Thus, the elastic wave device of the modified example 2 of Embodiment 1 is formed.

[0061] [Comparative Example]

[0062] Figure 5 (a) is a cross-sectional view of the comparative example elastic wave device 500. Figure 5 (b) is a cross-sectional view showing the problem generated in the elastic wave device 500 of the comparative example. Figure 5 As shown in (a), in the comparative example, the frame 18 does not have a second frame-shaped portion between the substrate 10 and the sealing layer 44. The sealing layer 44 is disposed between the first frame-shaped portion 40 and the substrate 10. Other structures are the same as in Embodiment 1, therefore descriptions are omitted. Figure 5 As shown in (b), in the comparative example elastic wave device 500, sometimes after a temperature cycling test, a crack 65 is generated at the lower end of the gap 22 side of the first frame portion 40.

[0063] [Simulation 1]

[0064] Figure 6 (a) is a plan view of the simulated models A, B, and C. Figure 6 (b) is a sectional view of models A and B. Figure 6 (c) is a sectional view of model C. In Figure 6 In (a), the illustrations of cap 83, solder layer 93, and barrier layer 92 are omitted. Figure 6 (a) to Figure 6 As shown in (c), the simulation was performed using a 1 / 4 symmetric model of the substrate 80. That is, frame-shaped portions 81 and 82, etc., were not provided on the +X side and -Y side of the substrate 80, and the boundary conditions of these surfaces were treated as mirror conditions.

[0065] like Figure 6 As shown in (b), in models A and B, a frame-shaped portion 82 is provided at the periphery of the substrate 10, and a frame-shaped portion 81 is provided on the frame-shaped portion 82. A barrier layer 92 is provided on the frame-shaped portion 81, and a solder layer 93 is provided on the barrier layer 92. A cover 83 is provided on the solder layer 93. Figure 6 As shown in (c), in model C, the frame-shaped portion 82 is not provided around the periphery of the substrate 10. The frame-shaped portion 81 is provided on the substrate 10, the barrier layer 92 is provided on the frame-shaped portion 81, and the solder layer 93 is provided on the barrier layer 92. A cover 83 is provided on the solder layer 93.

[0066] Models A, B, and C underwent 5.5 temperature cycles equivalent to a temperature cycling test, ranging from -40℃ to +120℃, and the strain generated in the frame-shaped part 81 was measured. The simulation conditions are as follows.

[0067] Common conditions of models A, B, and C

[0068] Substrate 80: Sapphire substrate with a thickness of 75 μm

[0069] Cover 83: 30μm thick Kova alloy plate

[0070] Barrier layer 92: A nickel layer with a thickness of 2.5 μm.

[0071] Solder layer 93: A 5μm thick gold-tin solder layer

[0072] Conditions of Model A

[0073] Frame-shaped part 81: Copper layer with a thickness of 14μm

[0074] Frame-shaped portion 82: Alumina layer with a thickness of 10 μm

[0075] Conditions of Model B

[0076] Frame-shaped part 81: Copper layer with a thickness of 14μm

[0077] Frame-shaped portion 82: A nickel layer with a thickness of 10 μm

[0078] Conditions of Model C

[0079] Frame-shaped part 81: Copper layer with a thickness of 24μm

[0080] Table 1 shows the Young's modulus and coefficient of linear expansion for the materials used in the simulation.

[0081] Table 1

[0082] Figure 7 (a) is a graph showing the simulation results of the strain generated in frame-shaped parts 81 and 82 of model A. Figure 7 (b) is a graph showing the simulation results of the strain generated in the frame-shaped part 81 of model C. Figure 7 (a) and Figure 7 As shown in (b), both models A and C exhibit significant strain in the frame-like portion 81. In particular, in model C, a large strain is generated at the lower inner end of the frame-like portion 81. That is, in Figure 6 The region 84, which is the lower inner end of the frame-shaped part 81, has a large strain.

[0083] Figure 8(a) is a graph showing the simulation results of the cumulative strain of models A and C relative to the steps of temperature cycling. Figure 8 (b) is a graph showing the simulation results of the cumulative strain of models B and C relative to the steps of temperature cycling. Figure 8 (a) and Figure 8 In (b), the horizontal axis represents the steps of the temperature cycle, and the left vertical axis represents the steps of the temperature cycle. Figure 6 (a) and Figure 6 The cumulative strain generated in region 84, which is the lower inner end of frame-shaped part 81, as shown in (b). The right vertical axis represents the temperature of the temperature cycling test. Figure 8 (a) and Figure 8 As shown in (b), the cumulative strain applied to the frame portion 81 increases with temperature cycling, but the increase in cumulative strain in models A and B is less suppressed compared to model C. The maximum strain generated in region 84 of the frame portion 81 after temperature cycling is 0.135 in model C, compared to 0.070 in model A and 0.069 in model B.

[0084] The reason for the large strain in region 84 of the frame-shaped portion 81 is not clear, but the following reasons are considered, for example. During temperature cycling tests, the substrate 80 and the cover 83 repeatedly undergo thermal expansion and contraction according to their respective coefficients of linear expansion. For example, in the case where the substrate 80 is a sapphire substrate and the cover 83 is a Kova alloy plate, the substrate 80 and the cover 83 repeatedly undergo thermal expansion and contraction according to their respective coefficients of linear expansion. Since the frame-shaped portion 81 is thick and has a small Young's modulus, it is prone to bending when the substrate 80 and the cover 83 repeatedly undergo thermal expansion and contraction according to their respective coefficients of linear expansion. Therefore, it is considered that a large strain is generated in the frame-shaped portion 81. Furthermore, it is considered that since the coefficient of linear expansion of the sapphire constituting the substrate 80 is greater than that of the Kova alloy constituting the cover 30, the strain is larger on the lower side of the frame-shaped portion 81, particularly in region 84 at the lower inner end of the frame-shaped portion 81 extending from the substrate 80 and the cover 30.

[0085] Therefore, it is considered that in the comparative example, the strain at the lower inner end of the first frame-shaped portion 40 is greater, thus... Figure 4 As shown in (b), a crack 65 is formed on the lower surface of the first frame portion 40.

[0086] like Figure 8 (a) and Figure 8As shown in (b), the reason why the strain generated in the frame portion 81 is less in models A and B compared to model C is not yet clear, but the following reasons are considered, for example. In models A and B, a frame portion 82 is provided between the substrate 80 and the frame portion 81. It is believed that in this case, when the substrate 80 and the cover 83 undergo thermal expansion and contraction according to their respective coefficients of linear expansion, the frame portion 82 deforms integrally with the frame portion 81 in response to the deflection of the frame portion 81. On the other hand, it is believed that in model C, the frame portion 81 is fixed to the substrate 80, so even if the frame portion 81 deflects, the substrate 80 will not deform integrally with the frame portion 81. Thus, it is believed that in models A and B, since the frame portion 82 deforms correspondingly to the deflection of the frame portion 81, the strain in the region 84, which is the lower inner end of the frame portion 81, is less.

[0087] In Example 1 and its variations, such as Figure 1 As shown in (a), a second frame portion 42 is provided between the first frame portion 40 and the substrate 10, so the strain at the lower inner end of the first frame portion 40 is suppressed, and cracking in the first frame portion 40 is suppressed.

[0088] And, as Figure 7 As shown in (a), the strain generated in the frame portion 82 is small. This is believed to be because the frame portion 82 is thinner and has a larger Young's modulus than the frame portion 81, so the frame portion 82 is less prone to bending even when the substrate 80 and the cover 83 undergo thermal expansion and contraction according to their respective coefficients of linear expansion. Therefore, it is believed that the strain generated in the frame portion 82 is small.

[0089] Therefore, in Embodiment 1 and its variations, it is considered that the strain generated in the second frame portion 42 is small, and cracks are not easily generated in the second frame portion 42.

[0090] [Simulation 2]

[0091] Change Figure 6 (a) and Figure 6 The thickness of the frame portion 82 of model A shown in (b) was used to simulate the strain generated in region 84 of the frame portion 81 during 5.5 temperature cycles from -40°C to +120°C. Additionally, the barrier layer 92 and solder layer 93 were not included. The simulation conditions are as follows.

[0092] Substrate 80: Sapphire substrate with a thickness of 75 μm

[0093] Frame-shaped part 81: Copper layer with a thickness of 14μm

[0094] Frame-shaped portion 82: An alumina layer with a thickness varying between 1 μm and 20 μm.

[0095] Cover 83: 30μm thick Kova alloy plate

[0096] Figure 9 This is a graph showing the simulation results of the maximum strain generated in the frame-shaped portion 81 of model A relative to the thickness of the frame-shaped portion 82. Figure 9 In the diagram, the horizontal axis represents the thickness of the frame-shaped portion 82, and the vertical axis represents the magnitude of the maximum strain generated in the frame-shaped portion 81. For example... Figure 9 As shown, the results indicate that by making the thickness of the frame-shaped portion 82 3 μm or more, the maximum strain generated in the frame-shaped portion 81 can be effectively reduced. Furthermore, simulations were also conducted for the case where the frame-shaped portion 82 uses a material with a different Young's modulus than alumina, confirming that by making the thickness of the frame-shaped portion 82 3 μm or more, although the magnitude of the maximum strain differs, it is possible to achieve a reduction in strain compared to alumina. Figure 9 Similarly, it effectively reduces the maximum strain.

[0097] Therefore, in Embodiment 1, in order to reduce the strain generated in the first frame portion 40, the thickness of the second frame portion 42 is made to be 3 μm or more.

[0098] According to Example 1 and its variations, such as Figure 1 (a) and Figure 1 As shown in (b), a first frame-shaped portion 40, which surrounds the elastic wave element 50 when viewed from above, is provided between the substrate 10 and the cover 30. This first frame-shaped portion 40 has a thickness greater than half the distance H between the substrate 10 and the cover 30. A second frame-shaped portion 42, with a Young's modulus greater than that of the first frame-shaped portion 40 and a thickness of 3 μm or more, is provided between the substrate 10 and the first frame-shaped portion 40. Therefore, when the substrate 10 and the cover 30, which have different coefficients of linear expansion, undergo thermal expansion and contraction, the second frame-shaped portion 42 deforms accordingly with the first frame-shaped portion 40, thus reducing the strain generated in the first frame-shaped portion 40. In particular, the thickness of the second frame-shaped portion 42 being 3 μm or more... Figure 9 As shown, the strain generated in the first frame-shaped portion 40 can be effectively reduced. The second frame-shaped portion 42 is thinner and has a larger Young's modulus than the first frame-shaped portion 40, therefore, the second frame-shaped portion 42 is less prone to bending compared to the first frame-shaped portion 40. Therefore, the increase in strain generated in the second frame-shaped portion 42 is suppressed. Thus, cracking in both the first frame-shaped portion 40 and the second frame-shaped portion 42 can be suppressed.

[0099] From the viewpoint of suppressing the deflection of the second frame-shaped portion 42, the Young's modulus of the second frame-shaped portion 42 is preferably 1.3 times or more, more preferably 1.5 times or more, and even more preferably 1.7 times or more. If the Young's modulus of the second frame-shaped portion 42 is too large, other undesirable situations may occur. Therefore, the Young's modulus of the second frame-shaped portion 42 is preferably 15 times or less, more preferably 10 times or less, and even more preferably 5 times or less, of the Young's modulus of the first frame-shaped portion 40. From the viewpoint of making the second frame-shaped portion 42 easily deformable in accordance with the deflection of the first frame-shaped portion 40, the thickness of the second frame-shaped portion 42 is preferably 5 μm or more, more preferably 6 μm or more, and even more preferably 7 μm or more. From the viewpoint of suppressing the deflection of the second frame-shaped portion 42, the thickness of the second frame-shaped portion 42 is preferably 15 μm or less, more preferably 12 μm or less, and even more preferably 10 μm or less.

[0100] Furthermore, in Embodiment 1 and its variations, the difference between the coefficient of linear expansion of the first frame-shaped portion 40 and the coefficient of linear expansion of the second frame-shaped portion 42 is less than the difference between the coefficient of linear expansion of the first frame-shaped portion 40 and the coefficient of linear expansion of the substrate 10. Therefore, in the event of temperature changes such as during temperature cycling tests, the difference between the amount of thermal expansion and thermal contraction of the first frame-shaped portion 40 and the second frame-shaped portion 42 becomes smaller. This reduces the magnitude of strain generated in the first frame-shaped portion 40 and suppresses cracking in the first frame-shaped portion 40. From the viewpoint of minimizing strain in the first frame-shaped portion 40 by making the amounts of thermal expansion and thermal contraction of the first frame-shaped portion 40 and the second frame-shaped portion 42 similar, it is preferable that the coefficient of linear expansion of the second frame-shaped portion 42 is closer to the coefficient of linear expansion of the first frame-shaped portion 40 than the coefficient of linear expansion of the substrate 10.

[0101] Furthermore, in Embodiment 1 and its variant 2, the second frame-shaped portion 42 is formed of an inorganic insulating material. This allows for easy increase in the thickness of the second frame-shaped portion 42, which has a high Young's modulus. Figure 9 As shown, it can reduce the strain generated in the first frame-shaped part 40.

[0102] Furthermore, in Embodiment 1, the second frame-shaped portion 42 is formed of the same material as the substrate 10. Therefore, the coefficients of linear expansion of the substrate 10 and the second frame-shaped portion 42 are close, thus reducing strain generated in the second frame-shaped portion 42 and suppressing cracking in the second frame-shaped portion 42. This also ensures the bonding strength between the substrate 10 and the second frame-shaped portion 42.

[0103] Furthermore, in a modified example 2 of embodiment 1, the second frame-shaped portion 42 is formed of the same material as the piezoelectric layer 12. This allows for an increase in the Young's modulus of the second frame-shaped portion 42 and also facilitates an increase in its thickness. Figure 9As shown, the strain generated in the first frame-shaped portion 40 can be reduced. Furthermore, the increase in manufacturing steps required to form the second frame-shaped portion 42 can also be suppressed.

[0104] Furthermore, in Embodiment 1 and its variations, the first frame-shaped portion 40, having a thickness greater than half the distance H between the substrate 10 and the cover 30, and the second frame-shaped portion 42 disposed between the first frame-shaped portion 40 and the substrate 10, can be selected from the following listed materials, using a material whose Young's modulus is greater than that of the first frame-shaped portion 40. Additionally, the values ​​listed for each material below refer to Young's modulus.

[0105] Frame 1, Section 40: Titanium nitride (310 GPa), tungsten (378 GPa), nickel (207 GPa), titanium (155 GPa), copper (110 GPa), gold (77 GPa), gold-tin (76 GPa), solder (40 GPa), aluminum (70 GPa).

[0106] Frame 2, Section 42: Alumina (157 GPa), Silicon Oxide (77 GPa), Sapphire (470 GPa), Lithium Tantalate (254 GPa), Lithium Niobate (170 GPa), Silicon (120 GPa), Titanium Nitride (310 GPa), Tungsten (378 GPa), Nickel (207 GPa), Titanium (155 GPa), Copper (110 GPa), Gold (77 GPa), Gold-Tin (76 GPa), Aluminum (70 GPa)

[0107] Furthermore, in Embodiment 1 and its variations, the components are not limited to the elastic wave components 50 and 50a, but may also be passive components such as inductors or capacitors, active components such as transistors, or MEMS (Micro Electro Mechanical System) components.

[0108] [Simulation 3]

[0109] Figure 10 (a) to Figure 10 (i) is a cross-sectional view of the model used in Simulation 3. The simulation was the same as that in Simulation 1, using a 1 / 4 symmetric model of the substrate 80.

[0110] exist Figure 10 In model (a), the side surface 85a of the frame-shaped portion 81 is recessed than the side surface 86a of the frame-shaped portion 82, and the side surface 85b of the frame-shaped portion 81 is recessed than the side surface 86b of the frame-shaped portion 82. Therefore, the lower inner end 87a of the frame-shaped portion 81 is located closer to the inner side of the frame-shaped portion 82 than the upper inner end 88a of the frame-shaped portion 82, and the lower outer end 87b of the frame-shaped portion 81 is located closer to the inner side of the frame-shaped portion 82 than the upper outer end 88b of the frame-shaped portion 82.

[0111] exist Figure 10 In model (b), the side surface 85a of the frame-shaped portion 81 is recessed compared to the side surface 86a of the frame-shaped portion 82, and the side surface 85b of the frame-shaped portion 81 and the side surface 86b of the frame-shaped portion 82 form the same surface. Therefore, the lower inner end 87a of the frame-shaped portion 81 is located closer to the inner side of the frame-shaped portion 82 than the upper inner end 88a of the frame-shaped portion 82, and the lower outer end 87b of the frame-shaped portion 81 coincides with the upper outer end 88b of the frame-shaped portion 82.

[0112] exist Figure 10 In model (c), the side surface 85a of the frame-shaped portion 81 is recessed compared to the side surface 86a of the frame-shaped portion 82, and the side surface 85b of the frame-shaped portion 81 protrudes compared to the side surface 86b of the frame-shaped portion 82. Therefore, the lower inner end 87a of the frame-shaped portion 81 is located closer to the inner side of the frame-shaped portion 82 than the upper inner end 88a of the frame-shaped portion 82, and the lower outer end 87b of the frame-shaped portion 81 is located closer to the outer side of the frame-shaped portion 82 than the upper outer end 88b of the frame-shaped portion 82.

[0113] exist Figure 10 In model (d), the side surface 85a of frame portion 81 and the side surface 86a of frame portion 82 form the same surface, and the side surface 85b of frame portion 81 is recessed compared to the side surface 86b of frame portion 82. Therefore, the lower inner end 87a of frame portion 81 coincides with the upper inner end 88a of frame portion 82, and the lower outer end 87b of frame portion 81 is located closer to the inner side of frame portion 82 than the upper outer end 88b of frame portion 82.

[0114] exist Figure 10 In model (e), the side surface 85a of the frame-shaped portion 81 and the side surface 86a of the frame-shaped portion 82 form the same surface, and the side surface 85b of the frame-shaped portion 81 and the side surface 86b of the frame-shaped portion 82 form the same surface. Therefore, the lower inner end 87a of the frame-shaped portion 81 coincides with the upper inner end 88a of the frame-shaped portion 82, and the lower outer end 87b of the frame-shaped portion 81 coincides with the upper outer end 88b of the frame-shaped portion 82.

[0115] exist Figure 10 In model (f), the side surface 85a of the frame-shaped portion 81 and the side surface 86a of the frame-shaped portion 82 form the same surface, and the side surface 85b of the frame-shaped portion 81 protrudes more than the side surface 86b of the frame-shaped portion 82. Therefore, the lower inner end 87a of the frame-shaped portion 81 coincides with the upper inner end 88a of the frame-shaped portion 82, and the lower outer end 87b of the frame-shaped portion 81 is located on the outer side of the frame-shaped portion 82 than the upper outer end 88b of the frame-shaped portion 82.

[0116] exist Figure 10In model (g), the side 85a of the frame-shaped portion 81 protrudes more than the side 86a of the frame-shaped portion 82, and the side 85b of the frame-shaped portion 81 is more concave than the side 86b of the frame-shaped portion 82. Therefore, the lower inner end 87a of the frame-shaped portion 81 is located on the outer side of the frame-shaped portion 82 than the upper inner end 88a of the frame-shaped portion 82, and the lower outer end 87b of the frame-shaped portion 81 is located on the inner side of the frame-shaped portion 82 than the upper outer end 88b of the frame-shaped portion 82.

[0117] exist Figure 10 In model (h), the side 85a of frame portion 81 protrudes beyond the side 86a of frame portion 82, and the side 85b of frame portion 81 and the side 86b of frame portion 82 form the same surface. Therefore, the lower inner end 87a of frame portion 81 is located on the outer side of frame portion 82 than the upper inner end 88a of frame portion 82, and the lower outer end 87b of frame portion 81 coincides with the upper outer end 88b of frame portion 82.

[0118] exist Figure 10 In model (i), the side 85a of the frame-shaped portion 81 protrudes more than the side 86a of the frame-shaped portion 82, and the side 85b of the frame-shaped portion 81 protrudes more than the side 86b of the frame-shaped portion 82. Therefore, the lower inner end 87a of the frame-shaped portion 81 is located on the outer side of the frame-shaped portion 82 than the upper inner end 88a of the frame-shaped portion 82, and the lower outer end 87b of the frame-shaped portion 81 is located on the outer side of the frame-shaped portion 82 than the upper outer end 88b of the frame-shaped portion 82.

[0119] right Figure 10 (a) to Figure 10 Model (i) underwent 5.5 temperature cycles from -40°C to +120°C, and the strain generated in the frame section 81 was measured. In the simulation, for Figure 10 (a) to Figure 10 In all models of (i), the indentation D1 and protrusion T1 of frame portion 81 relative to frame portion 82 are 15% of the width W of frame portion 82. Other simulation conditions are the same as in simulation 2.

[0120] exist Figure 10 (a) and Figure 10 In model (b), compared to model C without the frame portion 82, in region 84 of the frame portion 81 (refer to...) Figure 6 The strain generated by (b) is large. However, in Figure 10 (c) to Figure 10 In model (i), compared to model C without the frame portion 82, in region 84 of the frame portion 81 (refer to...) Figure 6 The strain generated by (b) is small.

[0121] Therefore, in Example 1 and its variations, with Figure 10(d) to Figure 10 Similarly, by aligning the lower end of the first frame portion 40 on the gap 22 side and the upper end of the second frame portion 42 on the gap 22 side in the cross-section, the strain generated in the first frame portion 40 can be reduced. Alternatively, with... Figure 10 (g) to Figure 10 Similarly, by positioning the lower end of the first frame-shaped portion 40 on the gap 22 side in cross-section further outward than the upper end of the second frame-shaped portion 42 on the gap 22 side, the strain generated in the first frame-shaped portion 40 can be reduced. Alternatively, with... Figure 10 Similarly, by positioning the lower end of the first frame portion 40 on the gap 22 side closer to the inside of the second frame portion 42 than the upper end of the second frame portion 42 on the gap 22 side, and positioning the lower end of the first frame portion 40 on the side opposite to the gap 22 closer to the outside of the second frame portion 42 than the upper end of the second frame portion 42 on the side opposite to the gap 22, the strain generated in the first frame portion 40 can be reduced.

[0122] [Simulation 4]

[0123] Figure 11 (a) to Figure 11 (i) is a cross-sectional view of the model used in Simulation 4. The simulation is the same as that in Simulation 1, using a 1 / 4 symmetric model of the substrate 80.

[0124] exist Figure 11 (a) to Figure 11 (d) and Figure 11 (f) to Figure 11 In model (i), the frame portion 81 is provided with a recessed portion 90 that is recessed relative to the boundary portion when referenced to the boundary portion of the frame portion 82, and / or a protruding portion 91 that protrudes relative to the boundary portion. Figure 11 In model (e), the recessed portion 90 and the protruding portion 91 are not provided.

[0125] for Figure 11 (a) to Figure 11 Model (i) was simulated with 5.5 temperature cycles from -40°C to +120°C, and the strain generated in the frame portion 81 was measured. In the simulation, the indentation amount D2 of the recess 90 and the protrusion amount T2 of the protrusion 91 were 15% of the width W of the frame portion 82. Other simulation conditions were the same as in simulation 2.

[0126] exist Figure 11 (a) to Figure 11 In any model of (i), compared to model C without the frame portion 82, it is also in region 84 of the frame portion 81 (refer to) Figure 6 The strain produced by (a) is small.

[0127] Therefore, in Example 1 and its variations, even when with Figure 11 (a) to Figure 11 (i) Similarly, when the first frame portion 40 is provided with a recess and / or a protrusion, the strain generated in the first frame portion 40 is also reduced.

[0128] Figure 12 (a) and Figure 12 (b) is a cross-sectional view showing an example of another shape of the first frame portion 40. The first frame portion 40 can be as follows: Figure 12 As shown in (a), it has a conical shape in which the width widens from the second frame-shaped portion 42 toward the cover 30, or it can be like... Figure 12 As shown in (b), it has a conical shape in which the width tapers from the second frame portion 42 toward the cover 30.

[0129] Figure 12 (c) and Figure 12 (d) is a cross-sectional view showing an example of another shape of the second frame-shaped portion 42. The second frame-shaped portion 42 can be as follows: Figure 12 As shown in (c), it has a tapered shape in which the width widens from the first frame-shaped portion 40 toward the substrate 10, or it can be like... Figure 12 As shown in (d), it has a tapered shape in which the width tapers from the first frame portion 40 toward the substrate 10.

[0130]

Example 2

[0131] Figure 13 (a) is a circuit diagram of filter 200 in Example 2. Figure 13 As shown in (a), one or more series resonators S1 to S4 are connected in series between the input terminal Tin and the output terminal Tout. One or more parallel resonators P1 to P3 are connected in parallel between the input terminal Tin and the output terminal Tout. At least one of the series resonators S1 to S4 and the parallel resonators P1 to P3 can be an elastic wave device of Embodiment 1 and its modifications. The number of series resonators and parallel resonators can be appropriately set. A trapezoidal filter is shown as a filter, but the filter can also be a multimode filter.

[0132] Figure 13 (b) is a circuit diagram of the duplexer 210 of a modified example of Embodiment 2. Figure 13As shown in (b), a transmit filter 60 is connected between the common terminal Ant and the transmit terminal Tx. A receive filter 62 is connected between the common terminal Ant and the receive terminal Rx. The transmit filter 60 allows signals in the transmit band of the high-frequency signal input from the transmit terminal Tx to be transmitted to the common terminal Ant as transmit signals, and suppresses signals of other frequencies. The receive filter 62 allows signals in the receive band of the high-frequency signal input from the common terminal Ant to be transmitted to the receive terminal Rx as receive signals, and suppresses signals of other frequencies. At least one of the transmit filter 60 and the receive filter 62 can be configured as the filter of Embodiment 2. A duplexer is illustrated as a multiplexer, but a tripplexer or a quadplexer may also be used.

[0133] The embodiments of the present invention have been described in detail above, but the present invention is not limited to this specific embodiment and can be modified and altered in various ways within the scope of the spirit of the present invention as described in the claims.

Claims

1. An electronic component having: substrate; Components disposed on the substrate; A cover, which is disposed on the substrate in such a way that it has a gap that exposes the element, has a different coefficient of linear expansion than the coefficient of linear expansion of the substrate; A first frame-shaped portion, disposed between the substrate and the cover, surrounds the element when viewed from above, and the first frame-shaped portion has a thickness greater than 1 / 2 the distance between the substrate and the cover; and A second frame-shaped portion is disposed between the substrate and the first frame-shaped portion. The Young's modulus of the second frame-shaped portion is greater than that of the first frame-shaped portion, and the thickness of the second frame-shaped portion is 3 μm or more.

2. The electronic component according to claim 1, wherein, The difference between the linear expansion coefficient of the first frame portion and the linear expansion coefficient of the second frame portion is less than the difference between the linear expansion coefficient of the first frame portion and the linear expansion coefficient of the substrate.

3. The electronic component according to claim 1 or 2, wherein, The second frame-shaped portion is formed of inorganic insulating material.

4. The electronic component according to claim 3, wherein, The second frame-shaped portion is formed of the same material as the substrate.

5. The electronic component according to claim 1 or 2, wherein, The element is an elastic wave element.

6. The electronic component according to claim 5, wherein, The electronic component has a piezoelectric layer disposed on the substrate. The elastic wave element is disposed on the piezoelectric layer. The second frame-shaped portion is formed of the same material as the piezoelectric layer.

7. The electronic component according to claim 1 or 2, wherein, The first frame-shaped portion is formed of copper. The second frame-shaped portion is formed of aluminum oxide or nickel.

8. The electronic component according to claim 1 or 2, wherein, In cross-section, the lower end of the gap side of the first frame portion and the upper end of the gap side of the second frame portion are aligned in the stacking direction of the first frame portion and the second frame portion.

9. The electronic component according to claim 1 or 2, wherein, In cross-section, the lower end of the gap side of the first frame portion is located on the outer side of the second frame portion, which is closer to the upper end of the gap side of the second frame portion.

10. The electronic component according to claim 1 or 2, wherein, In cross-section, the lower end of the gap side of the first frame portion is located closer to the inner side of the second frame portion than the upper end of the gap side of the second frame portion, and the lower end of the side of the first frame portion opposite to the gap is located closer to the outer side of the second frame portion than the upper end of the side of the second frame portion opposite to the gap.

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