Photoelectric conversion device and photoelectric conversion system

Abstract

This invention provides a photoelectric conversion device and a photoelectric conversion system. The photoelectric conversion device includes: a semiconductor layer including a first surface and a second surface; a first electrode plug disposed to contact the first surface and be supplied with a first voltage; and a second electrode plug disposed to contact the first surface and be supplied with a second voltage. The semiconductor layer includes an active region defined by an isolation region to have an elongated shape in a predetermined direction in orthogonal projection onto the first surface. The active region includes a first semiconductor region of a first conductivity type disposed to contact the first electrode plug and a second semiconductor region of a second conductivity type disposed to contact the second electrode plug. The centroid of the first semiconductor region is disposed between a first end of the active region in the predetermined direction and the centroid of the active region. The second semiconductor region is disposed between a second end of the active region in the predetermined direction and the first semiconductor region.

Description

Technical Field

[0001] This disclosure relates to photoelectric conversion equipment and photoelectric conversion systems. Background Technology

[0002] Japanese Patent Application Publication No. 2018-201005 describes an avalanche photodiode (APD) comprising an n-type semiconductor region serving as a cathode, a p-type semiconductor region forming a pn junction with the n-type semiconductor region, and an anode disposed in the same layer as and close to the n-type semiconductor region. The p-type semiconductor region includes a multiplication region in which carriers generated by detected incident light undergo avalanche multiplication. The APD described in Japanese Patent Application Publication No. 2018-201005 also includes contacts connected to the n-type semiconductor region serving as a cathode, an anode disposed in the same layer as and close to the n-type semiconductor region, and contacts connected to the anode.

[0003] In the APD described in Japanese Patent Application Publication No. 2018-201005, a strong electric field is generated laterally along the surface of the substrate because the cathode and anode are arranged in the same layer and close to each other. As a result, dark charges other than signal charges cause avalanche multiplication, which may generate noise. Summary of the Invention

[0004] This disclosure provides a technique with a configuration that is beneficial for noise reduction.

[0005] This disclosure provides a photoelectric conversion device in its first aspect, comprising: a semiconductor layer including a first surface and a second surface; a first electrode plug disposed to contact the first surface and be supplied with a first voltage; and a second electrode plug disposed to contact the first surface and be supplied with a second voltage, wherein the semiconductor layer includes an active region defined by an isolation region to have an elongated shape in a predetermined direction in orthogonal projection onto the first surface, the active region including a first semiconductor region of a first conductivity type disposed to contact the first electrode plug and a second semiconductor region of a second conductivity type disposed to contact the second electrode plug, and the centroid of the first semiconductor region being disposed between a first end of the active region in the predetermined direction and the centroid of the active region, and the second semiconductor region being disposed between a second end of the active region in the predetermined direction and the first semiconductor region.

[0006] This disclosure provides a photoelectric conversion system in its second aspect, comprising: a photoelectric conversion device as defined in the first aspect; and a signal processing unit configured to process a signal output from the photoelectric conversion device.

[0007] The features of this disclosure will become apparent from the following description of embodiments with reference to the accompanying drawings. The following description of embodiments is given by way of example. Attached Figure Description

[0008] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the specification, serve to explain the principles of the embodiments.

[0009] Figure 1 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to an embodiment;

[0010] Figure 2 This is a diagram showing an example of the arrangement of the first substrate;

[0011] Figure 3 This is a diagram showing an example of the arrangement of the second substrate;

[0012] Figure 4 This is a diagram showing an example of the arrangement of photoelectric conversion elements and pixel circuits;

[0013] Figure 5 (A) to (C) are diagrams used to explain the photon detection operation;

[0014] Figure 6 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the first embodiment;

[0015] Figure 7 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the first embodiment;

[0016] Figure 8 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the first embodiment;

[0017] Figure 9 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the first embodiment;

[0018] Figure 10 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the first embodiment;

[0019] Figure 11 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the first embodiment;

[0020] Figure 12 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the first embodiment;

[0021] Figure 13 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the first embodiment;

[0022] Figure 14This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the first embodiment;

[0023] Figure 15 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the second embodiment;

[0024] Figure 16 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the second embodiment;

[0025] Figure 17 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the second embodiment;

[0026] Figure 18 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the second embodiment;

[0027] Figure 19 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the second embodiment;

[0028] Figure 20 This is a diagram illustrating an example of the arrangement of the photoelectric conversion device according to the second embodiment;

[0029] Figure 21 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a modified example of the second embodiment;

[0030] Figure 22 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the third embodiment;

[0031] Figure 23 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the third embodiment;

[0032] Figure 24 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the third embodiment;

[0033] Figure 25 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the third embodiment;

[0034] Figure 26 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the third embodiment;

[0035] Figure 27 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a first variation of the third embodiment;

[0036] Figure 28 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a first variation of the third embodiment;

[0037] Figure 29This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a first variation of the third embodiment;

[0038] Figure 30 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a first variation of the third embodiment;

[0039] Figure 31 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a first variation of the third embodiment;

[0040] Figure 32 This is a potential diagram illustrating an example of the arrangement of a photoelectric conversion device according to a first variation of the third embodiment;

[0041] Figure 33 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a second variation of the third embodiment;

[0042] Figure 34 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a second variation of the third embodiment;

[0043] Figure 35 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a second variation of the third embodiment;

[0044] Figure 36 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a second variation of the third embodiment;

[0045] Figure 37 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a second variation of the third embodiment;

[0046] Figure 38 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fourth embodiment;

[0047] Figure 39 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fourth embodiment;

[0048] Figure 40 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fourth embodiment;

[0049] Figure 41 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fourth embodiment;

[0050] Figure 42 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fourth embodiment;

[0051] Figure 43 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a first variation of the fourth embodiment;

[0052] Figure 44 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a first variation of the fourth embodiment;

[0053] Figure 45 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a first variation of the fourth embodiment;

[0054] Figure 46 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a first variation of the fourth embodiment;

[0055] Figure 47 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a second variation of the fourth embodiment;

[0056] Figure 48 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fifth embodiment;

[0057] Figure 49 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fifth embodiment;

[0058] Figure 50 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fifth embodiment;

[0059] Figure 51 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fifth embodiment;

[0060] Figure 52 This is a diagram illustrating an example of the arrangement of a photoelectric conversion device according to the fifth embodiment;

[0061] Figure 53 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a modified example of the fifth embodiment;

[0062] Figure 54 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a modified example of the fifth embodiment;

[0063] Figure 55 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a modified example of the fifth embodiment;

[0064] Figure 56 This is a diagram illustrating an example arrangement of a photoelectric conversion device according to a modified example of the fifth embodiment;

[0065] Figure 57 This is a functional block diagram of the photoelectric conversion system based on the first application example;

[0066] Figure 58A and Figure 58BThis is a functional block diagram of the photoelectric conversion system based on the second application example;

[0067] Figure 59 This is a functional block diagram of the photoelectric conversion system based on the third application example;

[0068] Figure 60 This is a functional block diagram of the photoelectric conversion system based on the fourth application example;

[0069] Figure 61A and Figure 61B This is a functional block diagram of the photoelectric conversion system based on the fifth application example;

[0070] Figure 62A and Figure 62B It is a functional block diagram of the photoelectric conversion system based on the sixth application example; and

[0071] Figure 63 This is a functional block diagram of the photoelectric conversion system based on the seventh application example. Detailed Implementation

[0072] In the following, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the claims. Several features are described in the embodiments, but not all such features are required, and several such features can be appropriately combined. Furthermore, in the drawings, the same reference numerals are given the same or similar configuration, and redundant descriptions thereof are omitted.

[0073] In this specification, the different conductivity types of semiconductor regions are distinguished as a first conductivity type and a second conductivity type. The first conductivity type uses charges with a first polarity as the majority carriers, and the second conductivity type uses charges with a second polarity as the majority carriers. When the first polarity is positive, the charges with the first polarity are holes, and the first conductivity type is p-type; when the second polarity is negative, the charges with the second polarity are electrons, and the second conductivity type is n-type. Conversely, when the first polarity is negative, the charges with the first polarity are electrons, and the first conductivity type is n-type; when the second polarity is positive, the charges with the second polarity are holes, and the second conductivity type is p-type.

[0074] Figure 1 An example arrangement of a photoelectric conversion device 100 according to an embodiment of the present disclosure is illustrated schematically. The photoelectric conversion device 100 may have a structure, for example, in which a first substrate 11 and a second substrate 21 are stacked. The first substrate 11 may include, for example, a photoelectric conversion element array 12 including a plurality of photoelectric conversion elements (APDs). The second substrate 21 may include processing circuitry 22 for processing signals output from the plurality of photoelectric conversion elements.

[0075] Figure 2 An example arrangement of the first substrate 11 is schematically shown. The photoelectric conversion element array 12 of the first substrate 11 may include a plurality of photoelectric conversion elements 102 arranged to form a plurality of rows and columns. Each photoelectric conversion element 102 constitutes part of a pixel 101. The photoelectric conversion device 100 will be described below as an imaging device by way of example. However, the photoelectric conversion device 100 may be formed as other devices. For example, the photoelectric conversion device 100 may be formed as a distance measuring device (e.g., a focus detection device or a distance measuring device using TOF (time of flight)) or a photometer (e.g., a device for measuring the amount of incident light). Note that a plurality of pixels 101 may be arranged in a straight line. In this case, the photoelectric conversion device 100 may form a line sensor.

[0076] Figure 3 The arrangement of the processing circuit 22 on the second substrate 21 is schematically shown. The processing circuit 22 may include, for example, a pixel circuit array 120 including multiple pixel circuits 103, a readout circuit 112, a control unit 115, a horizontal scanning circuit 111, multiple signal lines 113, a vertical scanning circuit 110, and an output unit 114. Each pixel circuit 103, together with a corresponding photoelectric conversion element 102, constitutes a pixel 101 and processes the signal output from the photoelectric conversion element 102. One pixel circuit 103 may be provided for one photoelectric conversion element 102, or one pixel circuit 103 may be provided for two or more photoelectric conversion elements 102. In the example, a photoelectric conversion element 102 and a pixel circuit 103 may be electrically connected via a connector. The pixel circuit 103 may include, for example, a counter and a memory. The memory may hold the count value obtained by counting with the counter. The photoelectric conversion element array 120 and the pixel circuit array 120 constitute a pixel array.

[0077] For example, the vertical scanning circuit 110 can sequentially select multiple rows of the photoelectric conversion element array 12 according to control signals supplied from the control unit 115. The vertical scanning circuit 110 may include at least one of, for example, a shift register and an address decoder. The readout circuit 112 reads signals output from pixel circuits 103 corresponding to pixels 101 of the rows selected by the vertical scanning circuit 110 via multiple signal lines 113. For example, the horizontal scanning circuit 111 supplies the signals for a row read out by the readout circuit 112 to the output unit 114 in a predetermined order.

[0078] Figure 4 An example of the arrangement of the photoelectric conversion element 102 and the pixel circuit 103 is shown. Figure 4In the example shown, a pixel circuit 103 is assigned to a photoelectric conversion element 102. The photoelectric conversion element 102 includes an APD 201. At least one of the plurality of components of the pixel circuit 103 may be arranged on the first substrate 11. Alternatively, all of the plurality of components of the pixel circuit 103 may be arranged on the first substrate 11.

[0079] A first voltage VH can be applied to the cathode of the APD 201. A second voltage VL is applied to the anode of the APD 201, and the first voltage VH has a potential higher than the second voltage VL. The potential difference between the first voltage VH and the second voltage VL is applied to the APD 201 (between the anode and cathode of the APD 201). This potential difference is the reverse bias voltage that enables the APD 201 to perform avalanche multiplication operation. The charge generated by the photons incident on the APD 201 causes avalanche multiplication, thereby generating an avalanche current. The mode in which a voltage higher than the breakdown voltage of the APD 201 is applied between the anode and cathode is called Geiger mode. The mode in which a voltage approximately or lower than the breakdown voltage is applied between the anode and cathode of the APD 201 is called linear mode. An APD operating in Geiger mode is called a SPAD. In the example, the first voltage VH is 1V and the second voltage VL is -30V.

[0080] The pixel circuit 103 may include a quenching element 202 connected between the cathode of the APD 201 and a terminal supplied with a first voltage VH. The quenching element 202 can be understood as an element that supplies the first voltage VH to the cathode of the APD 201. The quenching element 202 has the function of converting changes in the avalanche current generated in the APD 201 into a voltage signal. The quenching element 202 acts as a load circuit (quenching circuit) during signal multiplication via avalanche multiplication and is used to suppress avalanche multiplication by suppressing the voltage applied to the APD 201. This is referred to as quenching operation.

[0081] The pixel circuit 103 may additionally include at least one of, for example, a waveform shaping unit 210, a counter circuit 211, and a selection circuit 212. The waveform shaping unit 210 can output a pulse signal by shaping the potential change of the cathode of the APD 201 when a photon is detected. The waveform shaping unit 210 may include, for example, an inverter circuit. Figure 4 In the example shown, waveform shaping unit 210 is formed by an inverter, but waveform shaping unit 210 can be formed by connecting multiple inverters in series or by other circuits that have waveform shaping effects.

[0082] Counter circuit 211 can be configured to count the pulse signal output from waveform shaping unit 210 and hold the count value obtained by counting. When a first control pulse of an effective level is supplied from vertical scan circuit 110 via drive line 213, the signal held in counter circuit 211 can be reset. When a second control pulse of an effective level is supplied from vertical scan circuit unit 110 via drive line 214, selection circuit 212 can electrically connect counter circuit 211 to signal line 113. Selection circuit 212 may include, for example, a buffer circuit.

[0083] In this example, a counter circuit 211 is provided. However, the photoelectric conversion device 100 can be configured to obtain the pulse detection timing by replacing the counter circuit 211 with a time-to-digital converter (hereinafter referred to as TDC). In this case, the generation timing of the pulse signal output from the waveform shaping unit 210 can be converted into a digital signal by the TDC. A reference pulse (reference signal) can be supplied to the TDC from the vertical scan circuit unit 110 via a drive line to measure the timing of the pulse signal. Referring to the reference pulse, the TDC can generate a digital signal corresponding to the generation timing of the pulse signal output from the waveform shaping unit 210.

[0084] Figure 5 Figures (A) to (C) are used to explain the photon detection operation of the photoelectric conversion device 100. Figure 5 (A) is shown to be from Figure 4 The diagram shows an excerpt of the APD 201, quenching element 202, and waveform shaping unit 210. The input side of waveform shaping unit 210 is node A, and the output side of waveform shaping unit 210 is node B. Figure 5 (B) shows that in Figure 5 The waveform at node A in (A), and Figure 5 (C) shows that in Figure 5 The waveform at node B in (A). From time t0 to time t1, a potential difference VH-VL is applied to APD 201. When a photon is incident at time t1, avalanche multiplication occurs in APD 201. This causes an avalanche multiplication current to flow into quenching element 202, and the voltage (potential) at node A drops. When the voltage drop increases and the potential difference applied to APD 201 decreases, avalanche multiplication in APD 201 stops. Afterward, current to compensate for the voltage drop from voltage VL flows into node A, and node A stabilizes at the original potential level at time t3. At this time, the portion of the output waveform at node A that exceeds a given threshold is shaped by waveform shaping unit 210, and a pulse signal appears at node B.

[0085] refer to Figures 6 to 14The photoelectric conversion device 100 according to the first embodiment will now be described. Figure 6 A schematic plan view of the photoelectric conversion device 100 in the first plane PL-1 is shown. Figure 7 A schematic plan view of the photoelectric conversion device 100 in the second plane PL-2 is shown. Figure 8 A schematic plan view of the photoelectric conversion device 100 in the third plane PL-3 is shown. Figure 9 A schematic plan view of the photoelectric conversion device 100 in the fourth plane PL-4 is shown. The plan view is an orthogonal projection onto the first surface S1 or the second surface S2 of the semiconductor layer SL, which will be described later. Figure 10 It is along Figure 6 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line A-A'. Figure 11 It is along Figure 6 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line B-B'. Figure 12 It is along Figure 6 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line C-C'. Figure 13 This is a schematic cross-sectional view showing the arrangement of the isolation zone SPR. Figure 14 This is a schematic cross-sectional view showing a modified arrangement of the isolation region SPR.

[0086] Figure 6 Examples include a first semiconductor region SR-1 of a first conductivity type, a second semiconductor region SR-2 of a second conductivity type, a third semiconductor region SR-3 of a first conductivity type, an active region ACT, and an isolation region SPR. Figure 6Example also includes a first electrode plug EP-1 with a first voltage VH applied and a second electrode plug EP-2 with a second voltage VL applied. The impurity concentration of the first conductivity type in the third semiconductor region SR-3 is lower than that in the first semiconductor region SR-1. Therefore, the third semiconductor region SR-3 can mitigate the electric field between the first semiconductor region SR-1 and the second semiconductor region SR-2. The active region ACT can have an elongated shape in a predetermined direction, such as a rectangle, rhombus, parallelogram, trapezoid, or ellipse with long and short sides. An elongated shape in a predetermined direction means a shape whose dimension in the predetermined direction is larger than its dimension in a direction orthogonal to the predetermined direction. The predetermined direction can be understood as the direction of the long side of the active region ACT. The length of the active region ACT in the predetermined direction can, for example, be in the range of 1.5 times (inclusive) to 2.5 times (inclusive) the length of the active region in the direction orthogonal to the predetermined direction, and preferably in the range of 1.8 times (inclusive) to 2.2 times (inclusive) the length of the active region in the direction orthogonal to the predetermined direction. The active region ACT may include a first semiconductor region SR-1 of a first conductivity type arranged to contact the first electrode plug EP-1 and a second semiconductor region SR-2 of a second conductivity type arranged to contact the second electrode plug EP-2. The active region ACT may also include a third semiconductor region SR-3 of a first conductivity type arranged to surround the first semiconductor region SR-1 of the first conductivity type.

[0087] The active region ACT can be defined by an isolation region SPR. The isolation region SPR can be arranged to surround the active region ACT. The isolation region SPR can include, for example, deep trench isolation (DTI). The DTI can include an insulator, such as silicon oxide, aluminum oxide, or tantalum oxide. The centroid of the first semiconductor region SR-1 can be arranged between the first end E-1 of the active region ACT in a predetermined direction and the centroid G of the active region ACT, and the second semiconductor region SR-2 can be arranged between the second end E-2 of the active region ACT in the predetermined direction and the first semiconductor region SR-1. From another perspective, in a plan view, the centroid of the first electrode plug EP-1 can be arranged between the first end E-1 of the active region ACT and the centroid G of the active region ACT, and the second electrode plug EP-2 can be arranged between the second end E-2 of the active region ACT and the first electrode plug EP-1. This arrangement is advantageous for increasing the distance between the first semiconductor region SR-1 and the second semiconductor region SR-2 in the active region ACT, which has an elongated shape in a predetermined direction. This can reduce the likelihood of noise occurring between the first semiconductor region SR-1 and the second semiconductor region SR-2 due to avalanche multiplication caused by dark charges other than signal charges.

[0088] The first semiconductor region SR-1 can be arranged to be assembled in one of two regions obtained by equally dividing an active region ACT having an elongated shape in a predetermined direction. In the example, the centroid G of the first semiconductor region SR-1 can be arranged to coincide with the center of one of the two regions obtained by equally dividing the active region ACT in a predetermined direction.

[0089] Figure 7 Examples include a first wiring pattern WL-1 for supplying a first voltage VH to a first electrode plug EP-1 and a second wiring pattern WL-2 for supplying a second voltage VL to a second electrode plug EP-2.

[0090] Figure 8 An example of a bonding structure MB is shown, which includes a first bonding portion MB-1 electrically connected to a first electrode plug EP-1 and a second bonding portion MB-2 bonded to the first bonding portion MB-1. Figure 8 In the diagram, the black dot indicates the first electrode plug EP-1. As described later, the first bonding portion MB-1 is disposed on the first substrate SB-1, and the second bonding portion MB-2 is disposed on the second substrate SB-2. In the plan view, the first bonding portion MB-1 and the second bonding portion MB-2 preferably overlap with the first semiconductor region SR-1. This arrangement helps to reduce the parasitic capacitance of the nodes electrically connected to the first semiconductor region SR-1, and this can help to reduce power consumption and improve image quality. In the plan view, the bonding structures MB are preferably arranged at the same density throughout the photoelectric conversion element array 12. To achieve this, dummy bonding structures DMB can be disposed at locations where the first electrode plug EP-1 is not present. This helps to improve the stability of the bonding process between the first substrate SB-1 and the second substrate SB-2.

[0091] Figure 9 Examples include microlenses ML, optical structures ST that scatter and / or diffract light, and isolation regions SPR. Each microlens ML can be positioned for two photoelectric conversion elements 102. This structure is advantageous for focus detection based on phase difference detection. The optical structure ST can be formed, for example, by forming a recess in the semiconductor (silicon) constituting the semiconductor layer SL and filling the recess with a light-transmitting material (such as silicon oxide) having a refractive index different from that of the semiconductor. By providing the optical structure ST, the optical path length of light propagating through the semiconductor layer SL can be increased, thereby improving the photosensitivity of the photoelectric conversion device 100 in the near-infrared wavelength range.

[0092] Figure 10An example is shown of a semiconductor layer SL including a first surface S1 and a second surface S2. In the active region ACT of the semiconductor layer SL, a second semiconductor region SR-2 of a second conductivity type, a fourth semiconductor region SR-4 of a second conductivity type, a fifth semiconductor region SR-5 of a second conductivity type, a sixth semiconductor region SR-6 of a second conductivity type, an isolation region SPR, and an optical structure ST are arranged. Figure 10 The insulating layer ILF and the microlens ML are also illustrated. Figure 10 The diagram also illustrates a first plane PL-1, a second plane PL-2, a third plane PL-3, and a fourth plane PL-4. A fifth semiconductor region SR-5 can be arranged to contact the isolation region SPR, thereby suppressing the generation of dark charges from the interface between the isolation region SPR and the semiconductor constituting the semiconductor layer SL. The fifth semiconductor region SR-5 can be arranged to surround the fourth semiconductor region SR-4. A sixth semiconductor region SR-6 can be arranged between and spaced apart from the fourth semiconductor region SR-4 and the second surface S2. From another perspective, the sixth semiconductor region SR-6 can be arranged to contact the second surface S2 of the semiconductor layer SL. The sixth semiconductor region SR-6 can suppress the generation of dark charges from the second surface S2 of the semiconductor layer SL.

[0093] Here, the impurity concentration of the second conductivity type in the second semiconductor region SR-2 can be higher than the impurity concentration of the second conductivity type in each of the fifth semiconductor region SR-5 and the sixth semiconductor region SR-6. The impurity concentration of the second conductivity type in each of the fifth semiconductor region SR-5 and the sixth semiconductor region SR-6 can be similar to, or higher than, the impurity concentration of the second conductivity type in the fourth semiconductor region SR-4. The second voltage VL can be supplied to the second semiconductor region SR-2, the fourth semiconductor region SR-4, the fifth semiconductor region SR-5, and the sixth semiconductor region SR-6 of the second conductivity type.

[0094] Figure 11 An example is illustrated by a first semiconductor region SR-1 of a first conductivity type, a third semiconductor region SR-3 of a first conductivity type, and a fourth semiconductor region SR-4 of a second conductivity type, arranged in the active region ACT of the semiconductor layer SL. The fourth semiconductor region SR-4 is disposed between the third semiconductor region SR-3 and the second surface S2. The fourth semiconductor region SR-4 is electrically connected to the second semiconductor region SR-2. A strong electric field is generated between the first semiconductor region SR-1 of the first conductivity type and the fourth semiconductor region SR-4 of the second conductivity type, and an avalanche multiplication region is formed. Figure 12Examples include a first semiconductor region SR-1 of a first conductivity type, a second semiconductor region SR-2 of a second conductivity type, a third semiconductor region SR-3 of a first conductivity type, and a fourth semiconductor region SR-4 of a second conductivity type, arranged in a semiconductor layer SL. For example... Figure 12 As illustrated, in addition to the first substrate SB-1 and the second substrate SB-2, the photoelectric conversion device 100 may also include, for example, a third substrate SB-3.

[0095] The impurity concentration of the first conductivity type in the first semiconductor region SR-1 can be 1×10⁻⁶. 18 cm -3 Or larger, and can be 3×10 19 cm -3 Or even smaller. In the example, the impurity concentration of the first conductivity type in the first semiconductor region SR-1 is 1 × 10⁻⁶. 19 cm -3 The impurity concentration of the first conductivity type in the third semiconductor region SR-3 can be 1×10⁻⁶. 15 cm -3 Or larger, and can be less than 1×10 18 cm -3 In the example, the impurity concentration of the first conductivity type in the third semiconductor region SR-3 is 1 × 10⁻⁶. 17 cm -3 Or larger.

[0096] The impurity concentration of the second conductivity type in the second semiconductor region SR-2 can be 1×10⁻⁶. 18 cm -3 Or larger, and can be 6×10 19 cm -3 Or even smaller. In the example, the impurity concentration of the second conductivity type in the second semiconductor region SR-2 could be 4 × 10⁻⁶. 19 cm -3 The impurity concentration of the second conductivity type in the fourth semiconductor region SR-4 can be 1 × 10⁻⁶. 15 cm -3 Or larger, and can be less than 1×10 18 cm -3 In the example, the impurity concentration of the second conductivity type in the fourth semiconductor region SR-4 can be 4 × 10⁻⁶. 16 cm -3 The impurity concentration of the second conductivity type in the fifth semiconductor region SR-5 can be 1×10⁻⁶. 15 cm -3 Or larger, and can be less than 1×10 18 cm -3In the example, the impurity concentration of the second conductivity type in the fifth semiconductor region SR-5 can be 3 × 10⁻⁶. 16 cm -3 The impurity concentration of the second conductivity type in the sixth semiconductor region SR-6 can be 1×10⁻⁶. 16 cm -3 Or larger, and can be in 1×10 17 cm -3 Within the range.

[0097] like Figure 6 and Figure 9 As illustrated, the plurality of pixels 101 in the photoelectric conversion device 100 can form multiple groups, such that two adjacent pixels (e.g., pixels 101a and 101b) form a group. Multiple microlenses ML can be provided to correspond to the multiple groups respectively. Each pixel 101 (e.g., pixel 101a) includes an active region ACT, which includes a first semiconductor region SR-1 and a second semiconductor region SR-2. The multiple groups can be arranged to form, for example, a square grid. Alternatively, the multiple groups can be arranged to form, for example, a rectangular grid.

[0098] In the first embodiment, the direction from the first semiconductor region SR-1 of the first pixel 101a toward the second semiconductor region SR-2 of the first pixel 101a is consistent with the direction from the first semiconductor region SR-1 of the second pixel 101b toward the second semiconductor region SR-2 of the second pixel 101b. Adjacent pixels 101a and 101b are used in the pupil segmentation phase difference detection method to detect the phase difference.

[0099] like Figure 13 As schematically shown, the isolation region SPR may include a first insulating film IL-1, a second insulating film IL-2, and a third insulating film IL-3. The second insulating film IL-2 is disposed between the first insulating film IL-1 and the third insulating film IL-3. For example, the first insulating film IL-1 may be made of an insulator such as silicon oxide, silicon nitride, or silicon oxynitride. For example, the second insulating film IL-2 and the third insulating film IL-3 may be made of aluminum oxide or tantalum oxide, which induce charges with a second polarity. From another perspective, the second insulating film IL-2 and the third insulating film IL-3 may form a pinning film. This structure facilitates the electrical separation of adjacent pixels 101 and suppresses the generation of dark charges.

[0100] Figure 14 Another example of the layout of the isolation zone SPR is shown. Figure 14In the illustrated arrangement example, the isolation region SPR may include a first isolation region SPR-1 extending from the second surface S2 toward the first surface S1, and a second isolation region SPR-2 extending from the first surface S1 toward the first isolation region SPR-1. The first isolation region SPR-1 includes a second insulating film IL-2 and a third insulating film IL-3 serving as pinning films, and the second isolation region SPR-2 does not include a pinning film. According to this arrangement, a charge of a second polarity is induced at the interface between the first isolation region SPR-1 and the semiconductor constituting the semiconductor layer SL, but no charge of a second polarity is induced at the interface between the second isolation region SPR-2 and the semiconductor constituting the semiconductor layer SL. When this charge is induced, it means that the second voltage VL supplied to the fourth semiconductor region SR-4 is also supplied to a portion of the side surface of the isolation region SPR. In this case, a strong electric field can be locally generated between the first semiconductor region SR-1 and the side surface of the isolation region SPR. Therefore, as... Figure 14 As shown, it is useful to arrange the second isolation region SPR-2 without a pinning membrane in the region on the side of the first surface S1 in the isolation region SPR.

[0101] refer to Figures 15 to 20 The photoelectric conversion device 100 according to the second embodiment will now be described. For matters not mentioned in the photoelectric conversion device 100 according to the second embodiment, the first embodiment can be followed. Figure 15 A schematic plan view of the photoelectric conversion device 100 in the first plane PL-1 is shown. Figure 16 A schematic plan view of the photoelectric conversion device 100 in the second plane PL-2 is shown. Figure 17 A schematic plan view of the photoelectric conversion device 100 in the third plane PL-3 is shown. Figure 18 It is along Figure 15 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line A-A'. Figure 19 It is along Figure 15 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line B-B'. Figure 20 It is along Figure 15 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line C-C'.

[0102] In the second embodiment, the direction from the first semiconductor region SR-1 of the first pixel 101a toward the second semiconductor region SR-2 of the first pixel 101a is opposite to the direction from the first semiconductor region SR-1 of the second pixel 101b toward the second semiconductor region SR-2 of the second pixel 101b. This arrangement reduces the difference between the distances between the first semiconductor regions SR-1 and SR-2, the distances between the second semiconductor regions SR-2 and SR-2, and the distance between the first semiconductor regions SR-1 and SR-2. This arrangement implies a high degree of layout symmetry, which is beneficial for reducing characteristic variations caused by manufacturing processes.

[0103] Figure 21 A variation of the second embodiment is shown. This variation has the capability of being transmitted from... Figure 17 The arrangement shown is obtained by removing the spurious bonding structure DMB in the arrangement according to the second embodiment, where the spurious bonding structure DMB is located at the position where the first electrode plug EP-1 to which the first voltage VH is applied is not arranged. This arrangement is beneficial for miniaturization of pixel 101.

[0104] refer to Figures 22 to 26 The photoelectric conversion device 100 according to the third embodiment will now be described. For matters not mentioned in the photoelectric conversion device 100 according to the third embodiment, the first or second embodiment may be followed. Figure 22 A schematic plan view of the photoelectric conversion device 100 in the first plane PL-1 is shown. Figure 23 A schematic plan view of the photoelectric conversion device 100 in the second plane PL-2 is shown. Figure 24 It is along Figure 22 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line A-A'. Figure 25 It is along Figure 22 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line B-B'. Figure 26 It is along Figure 22 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line C-C'.

[0105] In the third embodiment, the direction from the first semiconductor region SR-1 of the first pixel 101a toward the second semiconductor region SR-2 of the first pixel 101a is opposite to the direction from the first semiconductor region SR-1 of the second pixel 101b toward the second semiconductor region SR-2 of the second pixel 101b. Furthermore, the direction from the first semiconductor region SR-1 of the third pixel 101c toward the second semiconductor region SR-2 of the third pixel 101c is opposite to the direction from the first semiconductor region SR-1 of the fourth pixel 101d toward the second semiconductor region SR-2 of the fourth pixel 101d. From another perspective, in the third embodiment, the long side direction (predetermined direction) of the active region of each of the first pixel 101a and the second pixel 101b differs by 90° from the long side direction (predetermined direction) of the active region of each of the third pixel 101c and the fourth pixel 101d. With this arrangement, both the phase difference between light beams passing through two regions arranged in the horizontal direction of the pupil plane and the phase difference between light beams passing through two regions arranged in the vertical direction of the pupil plane can be detected.

[0106] Similarly, in the third embodiment, the difference between the distances between the first semiconductor regions SR-1 and SR-2, the distances between the second semiconductor regions SR-2 and SR-2, and the distance between the first semiconductor regions SR-1 and SR-2 can be reduced. This arrangement implies a high degree of symmetry in the layout, which is beneficial for reducing characteristic variations caused by manufacturing processes.

[0107] refer to Figures 27 to 32 The photoelectric conversion device 100 according to the first modification of the third embodiment will now be described. For matters not mentioned in the photoelectric conversion device 100 according to the first modification of the third embodiment, the third embodiment can be followed. Figure 27 A schematic plan view of the photoelectric conversion device 100 in the first plane PL-1 is shown. Figure 28 A schematic plan view of the photoelectric conversion device 100 in the fifth plane PL-5 is shown. Figure 29 It is along Figure 27 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line A-A'. Figure 30 It is along Figure 27 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line B-B'. Figure 31 It is along Figure 27 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line C-C'.

[0108] In a first variation, the active region ACT may further include a seventh semiconductor region SR-7 of a first conductivity type disposed between the fourth semiconductor region SR-4 and the sixth semiconductor region SR-6. The active region ACT may also include an eighth semiconductor region SR-8 of the first conductivity type, at least partially surrounded by the seventh semiconductor region SR-7. The impurity concentration of the first conductivity type in the eighth semiconductor region SR-8 may be higher than the impurity concentration of the first conductivity type in the seventh semiconductor region SR-7. The eighth semiconductor region SR-8 may be arranged to at least partially overlap with the first semiconductor region SR-1 in a planar view (orthogonal projection onto the first surface S1).

[0109] The charge generated by photoelectric conversion in the region between the fourth semiconductor region SR-4 and the sixth semiconductor region SR-6 is detected when it passes through the overlapping region (avalanche multiplication region) of the first semiconductor region SR-1 and the fourth semiconductor region SR-4 in the planar diagram. Therefore, it is advantageous to form a potential gradient so that the charge generated by photoelectric conversion in the region between the fourth semiconductor region SR-4 and the sixth semiconductor region SR-6 is moved (to the avalanche multiplication region). Conversely, if a flat potential region exists, the charge velocity decreases, and the responsivity may be reduced.

[0110] Figure 32 This is a potential diagram when the first conductivity type is n-type and the first semiconductor region SR-1 is used as the cathode. By setting a seventh semiconductor region SR-7 of the first conductivity type, a potential gradient can be formed between the end of the active region and the avalanche multiplication region. By setting an eighth semiconductor region SR-8, a steeper potential gradient can be formed. Note that even when the eighth semiconductor region SR-8 is set alone, a potential gradient can be formed between the end of the active region and the avalanche multiplication region.

[0111] In a first variation, the active region ACT may further include a ninth semiconductor region SR-9, arranged to surround the second semiconductor region SR-2, which is of a second conductivity type. The impurity concentration of the second conductivity type in the ninth semiconductor region SR-9 can be set to be lower than the impurity concentration of the second conductivity type in the second semiconductor region SR-2. According to this arrangement, the electric field formed between the first semiconductor region SR-1 and the second semiconductor region SR-2 can be mitigated.

[0112] refer to Figures 33 to 37 The photoelectric conversion device 100 according to the second modification of the third embodiment will now be described. For matters not mentioned in the photoelectric conversion device 100 according to the second modification of the third embodiment, the first modification can be followed. Figure 33 A schematic plan view of the photoelectric conversion device 100 in the first plane PL-1 is shown. Figure 34 A schematic plan view of the photoelectric conversion device 100 in the fifth plane PL-5 is shown. Figure 35 It is along Figure 33 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line A-A'. Figure 36 It is along Figure 33 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line B-B'. Figure 37 It is along Figure 33 The diagram shows a schematic cross-sectional view of the photoelectric conversion device 100 taken along line C-C'. In a second variation, the eighth semiconductor region SR-8 has an elongated shape in the predetermined direction within the active region ACT. This arrangement facilitates adjusting the potential gradient between the end of the active region and the avalanche multiplication region.

[0113] refer to Figures 38 to 42 The photoelectric conversion device 100 according to the fourth embodiment will now be described. For matters not mentioned in the photoelectric conversion device 100 according to the fourth embodiment, the first to third embodiments may be followed. Figure 38 A schematic plan view of the photoelectric conversion device 100 in the first plane PL-1 is shown. Figure 39 A schematic plan view of the photoelectric conversion device 100 in the second plane PL-2 is shown. Figure 40 It is along Figure 38 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line A-A'. Figure 41 It is along Figure 38 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line B-B'. Figure 42 It is along Figure 38 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line C-C'.

[0114] In the fourth embodiment, the active region ACT may include a portion PP in which the second semiconductor regions SR-2 of four adjacent pixels are arranged close to the center CNTR of the aggregate GR of the four adjacent pixels. According to this arrangement, the distance between the first semiconductor region SR-1 and the second semiconductor region SR-2 in each active region ACT can be increased, thereby mitigating the electric field generated between the first semiconductor region SR-1 and the second semiconductor region SR-2.

[0115] refer to Figures 43 to 46 The photoelectric conversion device 100 according to the first modification of the fourth embodiment will now be described. For matters not mentioned in the photoelectric conversion device 100 according to the first modification of the fourth embodiment, the fourth embodiment can be followed. Figure 43 A schematic plan view of the photoelectric conversion device 100 in the first plane PL-1 is shown. Figure 44 It is along Figure 43 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line A-A'. Figure 45 It is along Figure 43 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line B-B'. Figure 46 It is along Figure 43 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line C-C'.

[0116] In a first variation of the fourth embodiment, the active region ACT may include a portion PP2 in which the third semiconductor regions SR-3 of four adjacent pixels are arranged close to the center CNTR2 of the assembly GR2 of the four adjacent pixels. This arrangement increases the spacing between adjacent third semiconductor regions SR-3. Therefore, even with a small pixel pitch, a mask for forming the third semiconductor regions SR-3 can be easily formed.

[0117] refer to Figure 47 The photoelectric conversion device 100 according to the second modification of the fourth embodiment will now be described. For matters not mentioned in the photoelectric conversion device 100 according to the second modification of the fourth embodiment, the first modification of the fourth embodiment can be followed. Figure 47 This is a first variation of the fourth embodiment shown. Figure 43 Corresponding figures. In a second variation of the fourth embodiment, as in the first variation of the fourth embodiment, the active region ACT may include a portion PP in which the second semiconductor regions SR-2 of four adjacent pixels are arranged close to the center CNTR of the assembly GR of the four adjacent pixels. Furthermore, in the second variation of the fourth embodiment, the third semiconductor regions SR-3 of the four adjacent pixels are arranged to surround the assembly GR. In an active region ACT, the third semiconductor regions SR-3 surround the second semiconductor regions SR-2 over a 90° range. According to this arrangement, the mask for forming the third semiconductor regions SR-3 comprises a single continuous region as the region corresponding to the third semiconductor regions SR-3. Therefore, the mask can be easily formed.

[0118] refer to Figures 48 to 52 The photoelectric conversion device 100 according to the fifth embodiment will now be described. For matters not mentioned in the photoelectric conversion device 100 according to the fifth embodiment, the first to fourth embodiments may be followed. Figure 48 A schematic plan view of the photoelectric conversion device 100 in the first plane PL-1 is shown. Figure 49 A schematic plan view of the photoelectric conversion device 100 in the fifth plane PL-5 is shown. Figure 50 It is along Figure 48A schematic cross-sectional view of the photoelectric conversion device 100 taken by line A-A'. Figure 51 It is along Figure 48 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line B-B'. Figure 52 It is along Figure 48 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line C-C'.

[0119] In the fifth embodiment, the active region ACT may further include a tenth semiconductor region SR-10 and an eleventh semiconductor region SR-11 of a first conductivity type. The tenth semiconductor region SR-10 may be arranged to electrically connect the first semiconductor region SR-1 and the eleventh semiconductor region SR-11. A third semiconductor region SR-3 may be arranged to surround the first semiconductor region SR-1, the tenth semiconductor region SR-10, and the eleventh semiconductor region SR-11. The distance between the centroid of the eleventh semiconductor region SR-11 and the centroid of the active region ACT may be less than the distance between the centroid of the first semiconductor region SR-1 and the centroid of the active region ACT. The impurity concentration of the first conductivity type in each of the tenth semiconductor region SR-10 and the eleventh semiconductor region SR-11 may be lower than the impurity concentration of the first conductivity type in the first semiconductor region SR-1. For example, the impurity concentration of the first conductivity type in each of the tenth semiconductor region SR-10 and the eleventh semiconductor region SR-11 may be 1 / 10 or less of the impurity concentration of the first conductivity type in the first semiconductor region SR-1. In other words, the impurity concentrations in the tenth semiconductor region SR-10 and the eleventh semiconductor region SR-11 can be adjusted to prevent the formation of avalanche multiplication regions.

[0120] A first voltage VH is applied to the eleventh semiconductor region SR-11 via the first semiconductor region SR-1 and the tenth semiconductor region SR-10, and an avalanche multiplication region can be formed between the eleventh semiconductor region SR-11 and the tenth semiconductor region SR-10. According to the fifth embodiment, the eleventh semiconductor region SR-11 can be positioned at or near the center of a pixel or active region while increasing the distance between the first semiconductor region SR-1 and the second semiconductor region SR-2. With this arrangement, charge can be collected in the avalanche multiplication region regardless of the location of the charge generated by photoelectric conversion. Therefore, the time required for charge collection can be reduced, and time variations (commonly referred to as timing jitter) can be reduced. This characteristic is particularly important when the photoelectric conversion device 100 is applied to applications such as distance measurement.

[0121] refer to Figures 53 to 56The photoelectric conversion device 100 according to a modified embodiment of the fifth embodiment will now be described. Matters not mentioned in the modified embodiment of the photoelectric conversion device 100 according to the fifth embodiment can be addressed by referring to the fifth embodiment. Figure 53 A schematic plan view of the photoelectric conversion device 100 in the first plane PL-1 is shown. Figure 54 It is along Figure 53 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line A-A'. Figure 55 It is along Figure 53 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line B-B'. Figure 56 It is along Figure 53 A schematic cross-sectional view of the photoelectric conversion device 100 taken by line C-C'.

[0122] In a variation of the fifth embodiment, the active region ACT may include a portion PP in which the second semiconductor regions SR-2 of four adjacent pixels are arranged close to the center CNTR of the assembly GR of the four adjacent pixels. Furthermore, in a variation of the fifth embodiment, the third semiconductor regions SR-3 of the four adjacent pixels are arranged to surround the assembly GR. In an active region ACT, the third semiconductor regions SR-3 surround the second semiconductor regions SR-2 over a 90° range. According to this arrangement, the mask for forming the third semiconductor regions SR-3 comprises a single continuous region corresponding to the third semiconductor regions SR-3. Therefore, the mask can be easily formed.

[0123] refer to Figure 57 The photoelectric conversion system according to the first application example will be described below. Figure 57 This is a block diagram illustrating a schematic configuration of a photoelectric conversion system according to a first application example.

[0124] The aforementioned photoelectric conversion device 100 is applicable to various photoelectric conversion systems. Examples of photoelectric conversion systems to which the photoelectric conversion device is applicable include digital still cameras, digital video cameras, surveillance cameras, copiers, fax machines, mobile phones, vehicle-mounted cameras, and observation satellites. Camera modules, including optical systems such as lenses and imaging devices, are also included in the photoelectric conversion system. Figure 57 A block diagram of a digital still camera is shown as an example of these.

[0125] Figure 57The photoelectric conversion system 1000 illustrated herein includes a camera device 1004 as an example of a photoelectric conversion device. The photoelectric conversion system 1000 also includes a lens 1002 that forms an optical image of a subject on the camera device 1004, an aperture 1003 configured to change the amount of light passing through the lens 1002, and a baffle 1001 configured to protect the lens 1002. The lens 1002 and the aperture 1003 form an optical system (optical device) that converges light onto the camera device 1004. The camera device 1004 is a photoelectric conversion device 100 (camera device) according to one of the above embodiments, and converts the optical image formed by the lens 1002 into an electrical signal.

[0126] The photoelectric conversion system 1000 also includes a signal processing unit 1007, which is an image generation unit configured to generate an image by processing the output signal output from the imaging device 1004. The signal processing unit 1007 serves as a processing device that performs various corrections and compressions as needed, thereby outputting image data. The signal processing unit 1007 can be formed on a semiconductor substrate on which the imaging device 1004 is disposed, or it can be formed on a different semiconductor substrate than the imaging device 1004. Alternatively, the imaging device 1004 and the signal processing unit 1007 can be formed on the same semiconductor substrate.

[0127] The photoelectric conversion system 1000 also includes a memory unit 1010 configured to temporarily store image data and an external interface unit (external I / F unit) 1013 configured to communicate with an external computer or the like. Furthermore, the photoelectric conversion system 1000 includes a recording medium 1012, such as a semiconductor memory, configured to record or read image data, and a recording medium control I / F unit 1011 configured to record or read data from the recording medium 1012. The recording medium control I / F unit 1011 and the recording medium 1012 can form part of a recording device. Note that the recording medium 1012 can be incorporated into the photoelectric conversion system 1000 or can be detachable.

[0128] Furthermore, the photoelectric conversion system 1000 includes a general-purpose control / operation unit 1009 for controlling various operations and the entire digital still camera, and a timing generation unit 1408 for outputting various timing signals to the imaging device 1004 and the signal processing unit 1007. The general-purpose control / operation unit 1009 and the timing generation unit 1408 can form part of a control device configured to control the operation of the photoelectric conversion system 1000. In this example, the timing signals, etc., can be input from an external source, and the photoelectric conversion system 1000 only needs to include at least the imaging device 1004 and the signal processing unit 1007 for processing the output signals from the imaging device 1004.

[0129] The camera device 1004 outputs a camera signal to the signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the camera signal output from the camera device 1004 and outputs image data. The signal processing unit 1007 uses the camera signal to generate an image. Although in Figure 57 Although not shown, a display device such as a monitor for displaying the generated image can be arranged in the photoelectric conversion system 1000. As described above, according to this application example, a photoelectric conversion system 1000 applying a photoelectric conversion device 100 (camera device) according to one of the above embodiments can be implemented.

[0130] Reference Figure 58A and Figure 58B The photoelectric conversion system 1300 and the moving body are described according to the second application example. Figure 58A and Figure 58B This is a diagram showing the arrangement of the photoelectric conversion system 1300 and the moving body according to a second application example.

[0131] Figure 58A An example of a photoelectric conversion system related to a vehicle-mounted camera is shown. The photoelectric conversion system 1300 includes an imaging device 1310. The imaging device 1310 is the photoelectric conversion device 100 (imaging device) described in one of the above embodiments. The photoelectric conversion system 1300 includes an image processing unit 1312 that performs image processing on multiple image data acquired by the imaging device 1310. The photoelectric conversion system 1300 also includes a distance acquisition unit 1316 and a collision determination unit 1318. The distance acquisition unit 1316 calculates the distance to an object, and the collision determination unit 1318 determines the possibility of a collision based on the calculated distance. Here, the distance acquisition unit 1316 can acquire distance information to the object using a time-of-flight (ToF) method, or it can acquire distance information using parallax information, etc. That is, the distance information is information related to parallax, defocus, and distance to the object, etc. The collision determination unit 1318 can use one of multiple distance information to determine the possibility of a collision. The distance acquisition unit 1316 can be implemented in specially designed hardware or as a software module. The distance acquisition unit 1316 can be implemented using a field-programmable gate array (FPGA) or an application-specific integrated circuit (ASIC). Alternatively, the distance acquisition unit 1316 can be implemented using a combination of these.

[0132] The photoelectric conversion system 1300 is connected to the vehicle information acquisition device 1320 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 1300 is also connected to the ECU 1330, which is a control device configured to output a control signal for generating braking force for the vehicle based on the judgment result in the collision judgment unit 1318. Furthermore, the photoelectric conversion system 1300 is connected to an alarm device 1340, which generates an alarm to the driver based on the judgment result of the collision judgment unit 1318. For example, if the collision judgment unit 1318 determines that the probability of a collision is high, the ECU 1330 controls the drive equipment (mechanical equipment) 1360 to brake, release the accelerator pedal, or suppress engine output, thereby controlling the vehicle to avoid a collision and reduce damage. The alarm device 1340 issues an alarm, displays alarm information on a screen such as a car navigation system, or applies vibration to the seat belt or steering wheel, thereby alerting the user.

[0133] In this application example, the photoelectric conversion system 1300 captures images of the periphery of the vehicle (moving body), such as the front or rear side. Figure 58B The photoelectric conversion system is shown when the front side of the vehicle (camera range 1350) is being photographed. The vehicle information acquisition device 1320 sends instructions to the photoelectric conversion system 1300 or the camera device 1310. This configuration can further improve the accuracy of distance measurement.

[0134] The example of implementing control to avoid collisions with other vehicles has already been explained above. The photoelectric conversion system 1300 can also be applied to control autonomous driving while following another vehicle or without deviating from its lane. Furthermore, the photoelectric conversion system 1300 can be applied not only to vehicles such as automobiles, but also to mobile bodies (mobile devices) such as ships, aircraft, or industrial robots. A mobile body includes one or both of a drive force generating unit that generates the driving force primarily used to move the mobile body and a rotating body primarily used to move the mobile body. The drive force generating unit can be an engine or motor, etc. The rotating body can be a tire, wheel, ship propeller, or propeller of the mobile body, etc. In addition, the photoelectric conversion system can be applied not only to mobile bodies, but also to equipment that widely uses object recognition, such as Intelligent Transportation Systems (ITS).

[0135] Reference Figure 59 Describe the photoelectric conversion system according to the third application example. Figure 59 This is a block diagram showing an example of the arrangement of a distance image sensor 1401 in a photoelectric conversion system according to this embodiment.

[0136] like Figure 59As shown, the distance image sensor 1401 includes an optical system 1402, a photoelectric conversion device 1403, an image processing circuit 1404, a monitor 1405, and a memory 1406. The distance image sensor 1401 can then receive light (modulated light or pulsed light) projected from the light source device 1411 toward the subject and reflected by the surface of the subject, thereby acquiring a distance image corresponding to the distance to the subject.

[0137] The optical system 1402 is formed by including one or more lenses and guides the image light (incident light) from the subject to the photoelectric conversion device 1403 and forms an image on the light-receiving surface (sensor section) of the photoelectric conversion device 1403.

[0138] As photoelectric conversion device 1403, the photoelectric conversion device 100 of each embodiment in the above embodiments is applied, and a distance signal for indicating the distance obtained from the light received signal output from photoelectric conversion device 1403 is supplied to image processing circuit 1404.

[0139] The image processing circuit 1404 performs image processing to create a distance image based on the distance signal supplied from the photoelectric conversion device 1403. Then, the distance image (image data) obtained through image processing is supplied and displayed on the monitor 1405, and is supplied and stored (recorded) in the memory 1406.

[0140] The distance image sensor 1401 with this arrangement can acquire, for example, a more accurate distance image by applying the photoelectric conversion device 100 described above, as the pixel characteristics are improved.

[0141] Reference Figure 60 Describe the photoelectric conversion system according to the fourth application example. Figure 60 This is a diagram illustrating an example of the schematic arrangement of an endoscopic surgical system 1250, which is a photoelectric conversion system according to a fourth application example.

[0142] Figure 60 This illustrates the state of an surgeon (physician) 1231 performing surgery on a patient 1232 on a bed 1233 using an endoscopic surgical system 1250. Figure 60 As shown, the endoscopic surgery system 1250 consists of an endoscope 1200, surgical instruments 1210, and a trolley 1234 equipped with various devices for endoscopic surgery.

[0143] Endoscope 1200 includes a tube 1201 and a camera 1202. The tube 1201 includes a region of a predetermined length distal to the end, which is inserted into the body cavity of the patient 1232. The camera 1202 is connected to the proximal end of the tube 1201. Figure 60The example shown depicts an endoscope 1200 configured as a so-called hard mirror including a hard tube 1201, but the endoscope 1200 can also be configured as a so-called soft mirror including a soft tube.

[0144] An opening for mounting an objective lens is provided at the distal end of the endoscope tube 1201. A light source device 1203 is connected to the endoscope 1200, and the light generated by the light source device 1203 is guided to the distal end of the endoscope tube through a light guide extending inside the endoscope tube 1201, and then emitted through the objective lens to the object of observation in the body cavity of the patient 1232. Note that the endoscope 1200 can be a direct-viewing endoscope, or it can be an oblique-viewing endoscope or a lateral-viewing endoscope.

[0145] An optical system and a photoelectric conversion device are provided in the camera 1202, and the reflected light (observation light) from the observed object is focused by the optical system onto the photoelectric conversion device. The observation light is photoelectrically converted by the photoelectric conversion device to generate an electrical signal corresponding to the observation light (i.e., an image signal corresponding to the observed image). As the photoelectric conversion device, the photoelectric conversion device 100 (camera device) described in the various embodiments above can be used. The image signal is transmitted as RAW data to the camera control unit (CCU) 1235.

[0146] The CCU 1235 comprises a central processing unit (CPU) and a graphics processing unit (GPU), and comprehensively controls the operation of the endoscope 1200 and the display device 1236. Furthermore, the CCU 1235 receives image signals from the camera 1202 and performs various image processing on the image signals, such as image processing (de-mosaicing) for displaying images based on the image signals.

[0147] Under the control of CCU 1235, display device 1236 displays an image based on an image signal that has undergone image processing by CCU 1235.

[0148] The light source device 1203 is formed by a light source such as a light-emitting diode (LED) and supplies illumination light to the endoscope 1200 when imaging the surgical site.

[0149] Input device 1237 is the input interface of endoscopic surgery system 1250. Users can input various information or commands into endoscopic surgery system 1250 via input device 1237.

[0150] The treatment tool control device 1238 controls the drive of the energy treatment tool 1212 for ablation or incision of tissues, or closure of blood vessels, etc.

[0151] The light source device 1203 that supplies illumination light to the endoscope 1200 when imaging the surgical site can be formed, for example, a white light source formed by LEDs, a laser light source, or a combination thereof. If the white light source is formed by a combination of RGB laser light sources, the output intensity and timing of each color (wavelength) can be accurately controlled, and therefore the light source device 1203 can adjust the white balance of the captured image. In this case, the object being observed is illuminated time-divisionally with laser beams from the RGB laser light sources, and the driving of the image sensor of the camera 1202 is controlled synchronously with the illumination timing, thereby enabling the capture of images corresponding to R, G, and B respectively in time-division. In this method, color images can be obtained without setting a color filter in the image sensor.

[0152] The drive of the light source device 1203 can be controlled to change the intensity of the light to be output at predetermined time intervals. Images can be acquired in time-division multiplexing by controlling the drive of the image sensor of the camera 1202 in synchronization with the timing of the change in light intensity, and the images can be combined to generate high dynamic range images without so-called loss of shadow detail or highlight detail.

[0153] The light source device 1203 can be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, the wavelength dependence of light absorption in body tissue is utilized. More specifically, a predetermined tissue, such as blood vessels, in the mucosal surface is imaged with high contrast by irradiation with light in a narrow band, compared to the illumination light used in normal observation (i.e., white light). Alternatively, in special light observation, fluorescence observation can be performed to obtain an image by using fluorescence generated by irradiation with excitation light. In fluorescence observation, for example, body tissue can be irradiated with excitation light and fluorescence from the body tissue can be observed, or a reagent can be locally injected into the body tissue while irradiating it with excitation light corresponding to the fluorescence wavelength of the reagent (such as indocyanine green (ICG)), thereby obtaining a fluorescence image. The light source device 1203 can be configured to supply narrow band light and / or excitation light corresponding to this special light observation.

[0154] Reference Figure 61A and Figure 61B Describe the photoelectric conversion system according to the fifth application example. Figure 61AGlasses 1600 (smart glasses) are described as a photoelectric conversion system according to a fifth application example. Glasses 1600 includes a photoelectric conversion device 1602. The photoelectric conversion device 1602 is the photoelectric conversion device 100 (camera device) described in the various embodiments above. A display device including a light-emitting device such as an OLED or LED can be disposed on the back side of the lens 1601. One or more photoelectric conversion devices 1602 can be disposed. Alternatively, multiple types of photoelectric conversion devices can be used in combination. The arrangement position of the photoelectric conversion device 1602 is not limited to... Figure 61A The layout is shown in the diagram.

[0155] The glasses 1600 also include a control device 1603. The control device 1603 serves as a power source for supplying power to the photoelectric conversion device 1602 and the aforementioned display device. Additionally, the control device 1603 controls the operation of the photoelectric conversion device 1602 and the display device. An optical system configured to focus light onto the photoelectric conversion device 1602 is formed on the lens 1601.

[0156] Figure 61B A pair of glasses 1610 (smart glasses) according to an application example is described. The glasses 1610 includes a control device 1612, and a photoelectric conversion device and a display device corresponding to a photoelectric conversion device 1602 are mounted on the control device 1612. The photoelectric conversion device in the control device 1612 and an optical system configured to project light emitted from the display device are formed in a lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the photoelectric conversion device and the display device, and controls the operation of the photoelectric conversion device and the display device. The control device may include a gaze detection unit for detecting the wearer's gaze. Gaze detection can be performed using infrared light. An infrared emitting unit emits infrared light towards the eyeball of a user who is looking at a displayed image. A camera unit including a light-receiving element detects the reflected light from the eyeball of the emitted infrared light, thereby obtaining an image of the eyeball. A light reduction unit is provided for reducing the light emitted from the infrared emitting unit to the display unit in a planar image, thereby reducing image quality degradation.

[0157] This method detects a user's gaze toward a displayed image from an image of the eye obtained by capturing infrared light. Any known method can be applied to gaze detection using images captured of the eye. As an example, a gaze detection method based on a Purkinje image obtained by reflecting light off the cornea can be used.

[0158] More specifically, gaze detection processing based on central pupillary corneal reflection is performed. Using central pupillary corneal reflection, a gaze vector representing the direction (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0159] The display device according to this application example may include a photoelectric conversion device with a light-receiving element, and control the displayed image of the display device based on the user's gaze information from the photoelectric conversion device.

[0160] More specifically, the display device determines the first visual field area that the user is looking at and the second visual field area in addition to the first visual field area based on gaze information. The first and second visual field areas can be determined by the display device's control device, or they can be received from an external control device. Within the display area of ​​the display device, the display resolution of the first visual field area can be controlled to be higher than that of the second visual field area. That is, the resolution of the second visual field area can be lower than that of the first visual field area.

[0161] Furthermore, the display area includes a first display area and a second display area different from the first display area, and a higher priority area can be determined from the first and second display areas based on viewing information. The first and second viewing areas can be determined by the control device of the display device, or can be received from an external control device. The resolution of the higher priority area can be controlled to be higher than the resolution of all other areas. That is, the resolution of the relatively low priority areas can be lower.

[0162] Note that AI can be used to determine the primary or higher-priority visual field. The AI ​​can be a model configured to use images of the eye and the actual direction of the eye viewing those images as supervisory data to estimate the angle of the gaze and the distance to objects in front of the gaze. The AI ​​program can be held by a display device, a photoelectric conversion device, or an external device. If an external device holds the AI ​​program, it is transmitted to the display device via communication.

[0163] When display control is based on gaze detection, smart glasses that also include a photoelectric conversion device configured to capture images of the external environment can be preferably applied. The smart glasses can display the captured external image information in real time.

[0164] Reference Figure 62A and Figure 62B The sixth application example is described. The aforementioned photoelectric conversion devices and systems can be applied to, for example, electronic equipment, such as so-called smartphones or tablet computers.

[0165] Figure 62A and Figure 62B This is a diagram showing an example of an electronic device 1500 equipped with a photoelectric conversion device. Figure 62AThe front side of the electronic equipment 1500 is shown, and Figure 62B The rear side of the electronic equipment 1500 is shown.

[0166] like Figure 62A As shown, the display 1510 for displaying images is arranged at the center of the front surface of the electronic device 1500. Then, along the upper edge of the front surface of the electronic device 1500, front-facing cameras 1521 and 1522 using the aforementioned photoelectric conversion device 100, an IR light source 1530 emitting infrared light, and a visible light source 1540 emitting visible light are arranged respectively.

[0167] like Figure 62B As shown, rear cameras 1551 and 1552, each using the aforementioned photoelectric conversion device 100, an IR light source 1560 emitting infrared light, and a visible light source 1570 emitting visible light are arranged along the upper edge of the back of the electronic device 1500.

[0168] By applying the photoelectric conversion device 100 described above, the electronic equipment 1500 having the above arrangement can capture, for example, higher quality images. Note that the photoelectric conversion device can be applied to electronic equipment such as infrared sensors, distance measurement sensors using active infrared sources, security cameras, or personal or biometric authentication cameras. This can improve the accuracy and performance of the electronic equipment.

[0169] Figure 63 This is a block diagram of an X-ray CT apparatus according to the seventh application example. The photoelectric conversion device 100 described above is suitable for the detector of an X-ray CT apparatus. The X-ray CT apparatus 30 according to this application example includes an X-ray generating unit 310, a wedge 316, a collimator 318, an X-ray detection unit 320, a top plate 330, a rotating frame 340, and a high-voltage generating device 350. The X-ray CT apparatus 30 also includes a data acquisition system (DAS) 351, a signal processing unit 352, a display unit 353, and a control unit 354.

[0170] The X-ray generating unit 310 is formed, for example, by a vacuum tube that generates X-rays. A filament current and a high voltage from a high-voltage generating device 350 are supplied to the vacuum tube of the X-ray generating unit 310. X-rays are generated when thermionic electrons are emitted from the cathode (filament) towards the anode (target).

[0171] The wedge 316 is a filter that adjusts the amount of X-rays emitted from the X-ray generating unit 310. The wedge 316 attenuates the amount of X-rays, ensuring a predetermined distribution of X-rays emitted from the X-ray generating unit 310 onto the subject. The collimator 318 is formed of a lead plate, which narrows the irradiation range of the X-rays that have passed through the wedge 316. The X-rays generated by the X-ray generating unit 310 are collimated into a cone shape by the collimator 318 and used to irradiate the subject on the top plate 330.

[0172] The photoelectric conversion device 100 described above is used to form an X-ray detection unit 320. The X-ray detection unit 320 detects the X-rays that have passed through the subject from the X-ray generation unit 310 and outputs a signal corresponding to the amount of X-rays to the DAS 351.

[0173] The rotating frame 340 is annular and configured to be rotatable. The X-ray generating unit 310 (wedge 316 and collimator 318) and the X-ray detection unit 320 are arranged facing each other in the rotating frame 340. The X-ray generating unit 310 and the X-ray detection unit 320 can rotate together with the rotating frame 340.

[0174] The high-voltage generating device 350 includes a boost circuit and outputs high voltage to the X-ray generating unit 310. The DAS 351 includes an amplifier circuit and an A / D conversion circuit, and outputs the signal from the X-ray detection unit 320 as digital data to the signal processing unit 352.

[0175] The signal processing unit 352 includes a central processing unit (CPU), a read-only memory (ROM), and a random access memory (RAM), and can perform image processing on digital data. The display unit 353 includes a flat panel display device and is capable of displaying X-ray images. The control unit 354 includes a CPU, ROM, and RAM, and controls the operation of the overall X-ray CT equipment 30.

[0176] While this disclosure has been described with reference to embodiments, it should be understood that this disclosure is not limited to the disclosed embodiments. The scope of the appended claims should be given the broadest interpretation to cover all such modifications and equivalent structures and functions.

Claims

1. A photoelectric conversion device, comprising: A semiconductor layer, comprising a first surface and a second surface; A first electrode plug is arranged to contact the first surface and be supplied with a first voltage; and a second electrode plug, which is arranged to contact the first surface and be supplied with a second voltage. The semiconductor layer includes an active region defined by an isolation region, which has an elongated shape in a predetermined direction in an orthogonal projection onto the first surface. The active region includes a first semiconductor region of a first conductivity type arranged to contact the first electrode plug and a second semiconductor region of a second conductivity type arranged to contact the second electrode plug, and The centroid of the first semiconductor region is disposed between the first end of the active region in the predetermined direction and the centroid of the active region, and the second semiconductor region is disposed between the second end of the active region in the predetermined direction and the first semiconductor region.

2. The device according to claim 1, in, The length of the active region in the predetermined direction is not less than 1.5 times the length of the active region in the direction orthogonal to the predetermined direction, and not greater than 2.5 times the length of the active region in the direction orthogonal to the predetermined direction.

3. The device according to claim 1, in, The device has a structure that allows the first substrate and the second substrate to be joined together. The first substrate includes the semiconductor layer, the first electrode plug, and a first junction portion electrically connected to the first electrode plug. The second substrate includes a second bonding portion bonded to the first bonding portion, and In orthogonal projection onto the first surface, the first junction and the second junction overlap with the first semiconductor region.

4. The device according to claim 1, in, The isolation zone is arranged to surround the active zone. The isolation region includes a first isolation region extending from the second surface toward the first surface and a second isolation region extending from the first surface toward the first isolation region. The first isolation area includes a stapled membrane, and The second isolation zone does not include the stapled membrane.

5. The device according to claim 1, further comprising a plurality of pixels, in, Each pixel includes the active region, which includes the first semiconductor region and the second semiconductor region. The plurality of pixels includes a first pixel and a second pixel arranged adjacent to each other, and The direction from the first semiconductor region of the first pixel toward the second semiconductor region of the first pixel is the same as the direction from the first semiconductor region of the second pixel toward the second semiconductor region of the second pixel.

6. The device according to claim 1, further comprising a plurality of pixels, in, Each pixel includes the active region, which includes the first semiconductor region and the second semiconductor region. The plurality of pixels includes a first pixel and a second pixel arranged adjacent to each other, and The direction from the first semiconductor region of the first pixel toward the second semiconductor region of the first pixel is opposite to the direction from the first semiconductor region of the second pixel toward the second semiconductor region of the second pixel.

7. The device according to claim 6, in, The plurality of pixels includes a third pixel and a fourth pixel arranged adjacent to each other, and The predetermined directions of the first pixel and the second pixel are 90° different from the predetermined directions of the third pixel and the fourth pixel.

8. The device according to claim 5, in, The multiple pixels form multiple groups, such that two adjacent pixels form a group, and multiple microlenses are provided to correspond to the multiple groups respectively.

9. The device according to claim 8, in, The two adjacent pixels are used to detect the phase difference.

10. The device according to claim 9, in, The multiple groups are arranged to form a square grid.

11. The device according to claim 1, in, The first semiconductor region is arranged to be assembled in one of two regions obtained by equally dividing the active region in the predetermined direction.

12. The device according to claim 1, in, The active region further includes a third semiconductor region arranged to surround the first semiconductor region, and a fourth semiconductor region arranged between the third semiconductor region and the second surface. The fourth semiconductor region is electrically connected to the second semiconductor region, and An avalanche multiplication region is formed between the first semiconductor region and the fourth semiconductor region.

13. The device according to claim 12, in, The isolation zone is arranged to surround the active zone. The active region includes a fifth semiconductor region of the second conductivity type arranged to contact the isolation region, and The fifth semiconductor region is arranged to surround the fourth semiconductor region.

14. The device according to claim 13, in, The active region further includes a sixth semiconductor region of the second conductivity type disposed between and spaced apart from the fourth semiconductor region, a seventh semiconductor region of the first conductivity type disposed between the fourth semiconductor region and the sixth semiconductor region, and an eighth semiconductor region of the first conductivity type at least partially surrounded by the seventh semiconductor region, wherein the impurity concentration of the first conductivity type in the eighth semiconductor region is higher than the impurity concentration of the first conductivity type in the seventh semiconductor region. In an orthogonal projection onto the first surface, the eighth semiconductor region at least partially overlaps with the first semiconductor region.

15. The device according to claim 1, in, The active region further includes a ninth semiconductor region of the second conductivity type arranged to surround the second semiconductor region, and the impurity concentration of the second conductivity type in the ninth semiconductor region is lower than the impurity concentration of the second conductivity type in the second semiconductor region.

16. The device according to claim 1, in, The active region further includes a tenth semiconductor region of the first conductivity type and an eleventh semiconductor region of the first conductivity type, and the tenth semiconductor region is arranged to electrically connect the first semiconductor region and the eleventh semiconductor region.

17. The device according to claim 16, in, The distance between the centroid of the eleventh semiconductor region and the centroid of the active region is less than the distance between the centroid of the first semiconductor region and the centroid of the active region.

18. The device according to claim 1, further comprising a plurality of pixels, in, Each pixel includes the active region, the active region including the first semiconductor region and the second semiconductor region, and The active region includes a portion in which the second semiconductor regions of four adjacent pixels are arranged close to the center of the assembly of the four adjacent pixels.

19. The device of claim 12, further comprising a plurality of pixels, in, Each pixel includes the active region, which includes the first semiconductor region, the second semiconductor region, and the third semiconductor region. The active region includes a portion in which the third semiconductor region of four adjacent pixels is arranged close to the center of the assembly of the four adjacent pixels.

20. A photoelectric conversion system, comprising: Photoelectric conversion device as defined in any one of claims 1 to 19; as well as A signal processing unit is configured to process the signal output from the photoelectric conversion device.

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