Light-emitting device, method for manufacturing light-emitting device, and display panel

Abstract

This application relates to a light-emitting device, a method for fabricating the light-emitting device, and a display panel. By designing an inverted trapezoidal pixel stack structure, the width of the light-emitting side of the pixel stack structure is greater than the width of the driving side. This reduces the probability of light generated by the sidewalls of the pixel stack structure being blocked, allowing more side light to propagate to the light-emitting side, reducing light loss and improving light extraction efficiency. By setting a reflective cup structure around the pixel stack structure, the high reflectivity of the inner sidewall of the reflective cup structure reflects the light generated by the pixel stack structure, preventing light scattering in all directions and converging the scattered light to the light-emitting side, significantly improving the light extraction efficiency of the light-emitting device. Simultaneously, the spaced arrangement of the reflective cup structure with the pixel stack structure avoids direct contact, preventing electrical short circuits that could affect pixel driving and minimizing light absorption loss by the reflective cup material, further improving light utilization.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a light-emitting device, a method for fabricating the light-emitting device, and a display panel. Background Technology

[0002] Silicon-based micro-LEDs, as an emerging display technology, possess advantages such as high brightness, high contrast, and fast response, and are considered the core of next-generation display technology. Diffractive waveguides, due to their thinness and mass production capabilities, are a key optical solution for miniaturizing augmented reality (AR) devices.

[0003] However, diffractive waveguides inherently suffer from low luminous efficiency, with light experiencing significant loss after multiple reflections and diffractions within the waveguide. To compensate for this loss and meet user visual needs, the onboard Micro-LED display must provide extremely high initial brightness. This directly leads to a significant increase in system power consumption and causes severe heat dissipation problems, hindering the practical development of AR devices in terms of battery life, size, and wearing comfort. There is an urgent need for innovative device and system designs to ensure sufficient light output efficiency without high power consumption and heat dissipation issues, thereby driving the realization of high-performance, miniaturized AR devices. Summary of the Invention

[0004] Therefore, it is necessary to provide a light-emitting device, a method for fabricating the light-emitting device, and a display panel to address the technical problems mentioned above in the background art.

[0005] In a first aspect, this application provides a light-emitting device, comprising: a light-emitting layer structure, wherein the light-emitting layer structure includes:

[0006] A pixel stack structure, wherein the cross-sectional shape of the pixel stack structure is trapezoidal, and the lower base of the trapezoid serves as the light-emitting side of the pixel stack structure, and the upper base of the trapezoid serves as the driving side of the pixel stack structure;

[0007] A reflective cup structure is disposed around the sidewall and driving side of the pixel stack structure, and is spaced apart from the pixel stack structure.

[0008] In one embodiment, the pixel stack structure includes a first electrode layer, a first conductivity type semiconductor layer, and an active layer stacked sequentially along a first direction, wherein the first direction is from the driving side of the pixel stack structure to the light-emitting side;

[0009] The light-emitting layer structure further includes:

[0010] A second conductivity type semiconductor layer is disposed on the side of the active layer away from the first conductivity type semiconductor layer;

[0011] The second electrode layer is disposed on the side of the second conductivity type semiconductor layer away from the active layer;

[0012] A lens layer is disposed on the side of the second electrode layer away from the semiconductor layer of the second conductivity type;

[0013] The orthographic projection of the second conductivity type semiconductor layer, the second electrode layer, and the lens layer along the second direction covers the orthographic projection of the pixel stack structure and the reflector cup structure along the second direction, where the second direction is the direction from the light-emitting side of the pixel stack structure to the driving side.

[0014] In one embodiment, one end of the reflector cup structure near the light-emitting side of the pixel stack structure is electrically connected to the second type of conductive semiconductor layer.

[0015] In one embodiment, the first electrode layer includes a first metal conductive layer and a first transparent conductive layer stacked sequentially along the first direction, and the reflective cup structure is provided with a through hole near the driving side of the pixel stack structure.

[0016] The light-emitting layer structure further includes:

[0017] The first pad is disposed on the side of the reflective cup structure away from the pixel stack structure, and the first pad is electrically connected to the first metal conductive layer through the through hole.

[0018] In one embodiment, the first electrode layer includes a first transparent conductive layer, and the reflective cup structure is provided with a through hole near the driving side of the pixel stack structure;

[0019] The light-emitting layer structure further includes:

[0020] A first metal conductive layer extends from the side of the reflective cup structure away from the driving side of the pixel stack structure through the through hole to the inside of the reflective cup structure and is electrically connected to the first transparent conductive layer.

[0021] The first pad is disposed on the side of the first metal conductive layer away from the reflective cup structure and is electrically connected to the first metal conductive layer.

[0022] In one embodiment, the light-emitting device further includes:

[0023] The driving layer structure includes a driving circuit and a second pad, the second pad being electrically connected to the driving circuit; wherein the driving layer structure and the light-emitting layer structure are bonded together after contacting the first pad via the second pad.

[0024] In one embodiment, the driving layer structure includes a plurality of second pads, all of which are electrically connected to the driving circuit.

[0025] The number of light-emitting layer structures is multiple, and each of the multiple light-emitting layer structures is bonded to the driving layer structure. The first pad of each light-emitting layer structure is respectively set to correspond one-to-one with a different second pad.

[0026] Secondly, this application provides a method for fabricating a light-emitting device, the method comprising:

[0027] A temporary substrate is provided on which an epitaxial stack is formed;

[0028] The epitaxial stack is patterned to form a pixel stack structure with a trapezoidal cross-sectional shape. The side closer to the temporary substrate is the lower base of the trapezoid, which serves as the light-emitting side of the pixel stack structure, and the side farther from the temporary substrate is the upper base of the trapezoid, which serves as the driving side of the pixel stack structure.

[0029] A reflective cup structure is formed on the pixel stack structure. The reflective cup structure is disposed around the sidewall and driving side of the pixel stack structure and is spaced apart from the pixel stack structure.

[0030] In one embodiment, the epitaxial stack includes a first electrode material layer, a first conductivity type semiconductor material layer, an active material layer and a second conductivity type semiconductor material layer stacked sequentially along a first direction, wherein the first direction is the direction along the thickness direction of the epitaxial stack pointing towards the temporary substrate;

[0031] The step of patterning the epitaxial stack to form a pixel stack structure with a trapezoidal cross-sectional shape includes:

[0032] The first electrode material layer, the first conductivity type semiconductor material layer, and the active material layer in the epitaxial stack are patterned to obtain a pixel stack structure including a first electrode layer, a first conductivity type semiconductor layer, and an active layer stacked sequentially along the first direction.

[0033] In one embodiment, before forming the reflective cup structure on the pixel stack structure, the method further includes:

[0034] A first passivation layer is formed on the pixel stack structure, the first passivation layer covering the sidewalls and driving side of the pixel stack structure; the reflective cup structure is formed on the surface of the first passivation layer away from the pixel stack structure.

[0035] In one embodiment, after forming the first passivation layer on the pixel stack structure and before forming the reflective cup structure on the pixel stack structure, the method further includes:

[0036] The first passivation layer and the second conductive semiconductor material layer are etched to form connection grooves on opposite sides of the pixel stack structure. The connection grooves penetrate the first passivation layer along the first direction and extend into the second conductive semiconductor material layer.

[0037] The reflective cup structure also extends into the connecting groove.

[0038] In one embodiment, the first electrode layer includes a first metal conductive layer and a first transparent conductive layer stacked sequentially along the first direction.

[0039] After forming the reflective cup structure on the pixel stack structure, the method further includes:

[0040] A via is formed at a position on the driving side of the reflective cup structure near the pixel stack structure, and the via exposes the first passivation layer;

[0041] A filling medium layer is formed, which fills the through-hole and covers the reflective cup structure;

[0042] A first pad is formed within the filling dielectric layer, and the first pad is electrically connected to the first metal conductive layer via the through-hole.

[0043] In one embodiment, the first electrode layer includes a first transparent conductive layer; after the reflective cup structure is formed on the pixel stack structure, it further includes:

[0044] A through-hole is formed on the driving side of the reflective cup structure near the pixel stack structure. The through-hole penetrates the reflective cup structure and the first passivation layer along the first direction and exposes the first transparent conductive layer.

[0045] A second passivation layer is formed, which covers the exposed first transparent conductive layer and the surface of the reflective cup structure away from the first passivation layer;

[0046] A via is formed, which is located at the position of the through hole, penetrates the second passivation layer along the first direction, and exposes the first transparent conductive layer, and the width of the via is smaller than the width of the through hole;

[0047] A first metal conductive layer is formed, which extends from the surface of the second passivation layer away from the driving side of the pixel stack structure through the via to the inside of the reflective cup structure and is electrically connected to the first transparent conductive layer.

[0048] A filling dielectric layer is formed, wherein the filling dielectric layer fills the first metal conductive layer and covers the second passivation layer;

[0049] A first pad is formed within the filling dielectric layer, and the first pad is electrically connected to the first metal conductive layer.

[0050] In one embodiment, after forming the first pad, the method further includes:

[0051] A driving layer structure is provided, the driving layer structure including a driving circuit and a second pad, the second pad being electrically connected to the driving circuit;

[0052] Bond the first pad to the second pad accordingly;

[0053] Strip the temporary substrate;

[0054] A second electrode layer and a lens layer are sequentially formed on the side of the second conductivity type semiconductor material layer away from the active layer.

[0055] Thirdly, this application also provides a display panel, including a light-emitting device as described in any of the above embodiments, or a light-emitting device prepared by the preparation method described in any of the above embodiments.

[0056] The aforementioned light-emitting device, its fabrication method, and display panel include a light-emitting layer structure. This structure comprises: a pixel stack structure with a trapezoidal cross-sectional shape, wherein the lower base of the trapezoid serves as the light-emitting side, and the upper base serves as the driving side; and a reflector cup structure, disposed around the sidewalls and driving side of the pixel stack structure, and spaced apart from it. By designing an inverted trapezoidal pixel stack structure, the width of the light-emitting side is greater than the width of the driving side, correspondingly reducing the probability of light from the sidewalls being blocked, allowing more side light to propagate to the light-emitting side, reducing light loss, and improving light extraction efficiency. By surrounding the pixel stack structure with a reflector cup structure, the high reflectivity of the inner sidewalls of the reflector cup structure reflects the light generated by the pixel stack structure, preventing light scattering in all directions and converging the scattered light to the light-emitting side, significantly improving the light extraction efficiency of the light-emitting device. Meanwhile, the spacing between the reflector cup structure and the pixel stack structure avoids direct contact between them, preventing electrical short circuits that could affect pixel driving and also avoiding light absorption and loss by the reflector cup material, thus further improving light utilization. Attached Figure Description

[0057] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments of this application or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0058] Figure 1 This is a schematic diagram of the light-emitting layer structure in one embodiment;

[0059] Figure 2 This is a schematic diagram of the light-emitting layer structure in another embodiment;

[0060] Figure 3 This is a schematic diagram of the light-emitting layer structure in another embodiment;

[0061] Figure 4 This is a schematic diagram of the light-emitting layer structure in another embodiment;

[0062] Figure 5 This is a schematic diagram of the light-emitting layer structure in another embodiment;

[0063] Figure 6 This is a schematic diagram of the light-emitting layer structure in another embodiment;

[0064] Figure 7 This is a schematic diagram of the structure of the light-emitting device in one embodiment;

[0065] Figure 8 This is a schematic diagram of the structure of the light-emitting device in another embodiment;

[0066] Figure 9 This is a schematic diagram of the structure of the light-emitting device in another embodiment;

[0067] Figure 10 This is a schematic flowchart of a method for fabricating a light-emitting device in one embodiment;

[0068] Figure 11 This is a schematic flowchart of a method for fabricating a light-emitting device in another embodiment;

[0069] Figure 12 This is a schematic flowchart of a method for fabricating a light-emitting device in another embodiment;

[0070] Figure 13 This is a schematic flowchart of a method for fabricating a light-emitting device in another embodiment;

[0071] Figure 14 This is a schematic flowchart of a method for fabricating a light-emitting device in another embodiment;

[0072] Figure 15 This is a schematic diagram of the process for fabricating a light-emitting device in one embodiment;

[0073] Figure 16 This is a top-view schematic diagram of the light-emitting device in one embodiment;

[0074] Figure 17 This is a schematic diagram of the process for fabricating a light-emitting device in another embodiment;

[0075] Figure 18 for Figure 17 A schematic diagram of the structure of the light-emitting device obtained by the preparation process;

[0076] Figure 19 This is a top-view schematic diagram of the light-emitting device in one embodiment;

[0077] Figure 20 This is a schematic diagram of the process for fabricating a light-emitting device in another embodiment;

[0078] Figure 21 for Figure 20 A schematic diagram of the structure of the light-emitting device obtained by the preparation process.

[0079] Explanation of reference numerals in the attached figures: 10: Light-emitting layer structure; 110: Pixel stack structure; 120: Reflector cup structure; 111: First electrode layer; 112: First conductivity type semiconductor layer; 113: Active layer; 130: Second conductivity type semiconductor layer; 140: Second electrode layer; 150: Lens layer; 1111: First transparent conductive layer; 1112: First metal conductive layer; 131: Connecting groove; 121: Through hole; 160: First pad; 170: First metal conductive layer; 20: Driving layer structure; 210: Driving circuit; 220: Second pad; 180: First bonding layer; 230: Second bonding layer. Detailed Implementation

[0080] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. The accompanying drawings illustrate embodiments of this application; however, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of this application more thorough and complete. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0081] It is understood that the terms "first," "second," etc., used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0082] It is understood that the term "connection" in the following embodiments should be understood as "electrical connection," "communication connection," etc., if the connected circuits, modules, units, etc., have electrical signal or data transmission with each other.

[0083] It is understandable that "at least one" refers to one or more, and "multiple" refers to two or more. "At least a part of an element" refers to part or all of an element.

[0084] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, the term “and / or” as used in this specification includes any and all combinations of the associated listed items.

[0085] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0086] As described in the background section, in order to meet the display requirements of AR devices, current silicon-based Micro-LEDs need to provide extremely high initial brightness. Although their advantages such as high brightness, high contrast, and fast response can meet this requirement to a certain extent, they will bring higher power consumption and heat dissipation problems, and there is an urgent need for a more efficient light-emitting device structure design.

[0087] In one method for fabricating silicon-based Micro-LEDs, a base epitaxial layer is bonded to a complementary metal-oxide-semiconductor (CMOS) driving backplane, followed by pixel patterning etching. The resulting light-emitting device has a trapezoidal pixel structure, meaning the sidewalls of the pixel structure slope inwards from the driving side to the light-emitting side. This causes some of the light emitted from the pixel's sides to be blocked by the isolation structure or auxiliary cathode, preventing all the light emitted from the pixel structure from being focused onto the front side for emission. Furthermore, the trapezoidal pixel structure, due to the inward slope of the sidewalls from the driving side to the light-emitting side, cannot form a reflective cup structure around it, further reducing the light extraction efficiency of the light-emitting device.

[0088] Based on this, this application provides a light-emitting device that, by designing an inverted trapezoidal pixel stack structure and a reflective cup structure surrounding it, concentrates most of the scattered light to the light-emitting side for emission, significantly improving the light-emitting efficiency of the device. Without considering material absorption losses and metal reflection and absorption losses, light can be emitted from the light-emitting side of the pixel stack structure regardless of the emission angle.

[0089] In one exemplary embodiment, such as Figure 1 As shown, a light-emitting device is provided, including a light-emitting layer structure 10; the light-emitting layer structure 10 includes: a pixel stack structure 110, the cross-sectional shape of the pixel stack structure 110 is trapezoidal, and the lower bottom edge of the trapezoid serves as the light-emitting side of the pixel stack structure 110, and the upper bottom edge of the trapezoid serves as the driving side of the pixel stack structure 110; a reflector cup structure 120 is disposed around the sidewall and driving side of the pixel stack structure 110, and is spaced apart from the pixel stack structure 110.

[0090] Specifically, the light-emitting layer structure 10 is the core light-emitting part of the entire light-emitting device, including the pixel stack structure 110 and the reflector cup structure 120. The two work together to achieve efficient light convergence and emission.

[0091] The pixel stack structure 110 is used to generate a light source. Its cross-sectional shape is trapezoidal, with the lower base of the trapezoid defined as the light-emitting side of the pixel stack structure 110, and the upper base of the trapezoid defined as the driving side of the pixel stack structure 110. Figure 1 As can be seen, the formed pixel stack structure 110 is inverted trapezoidal. The driving side of the pixel stack structure 110 can be understood as the side used to electrically connect with the driving layer structure and receive driving signals to drive the pixel stack structure 110 to emit light. The light-emitting side of the pixel stack structure 110 can be understood as the side used to emit the generated light outward.

[0092] As is known from common sense, for a trapezoidal structure, the length of its lower base is greater than the length of its upper base, which makes the width of the light-emitting side of the pixel stack structure 110 greater than the width of the driving side. The smaller width of the driving side reduces the probability of light generated by the sidewalls of the pixel stack structure 110 being blocked, allowing more side light to propagate to the light-emitting side, reducing light loss, and improving light extraction efficiency.

[0093] In one example, the cross-sectional shape of the pixel stack structure 110 can be an isosceles trapezoid, that is, the angles between the opposite sidewalls and the upper and lower bases of the pixel stack structure 110 are equal. This design can ensure the structural stability of the pixel stack structure 110 and minimize the loss of light from the sidewalls.

[0094] Furthermore, the reflector cup structure 120 is an auxiliary structure for converging the light generated by the pixel stack structure 110, and is disposed around the sidewall and driving side of the pixel stack structure 110, and is spaced apart from the pixel stack structure 110.

[0095] The arrangement surrounding the sidewalls and driving side of the pixel stack structure 110 means that the reflective cup structure 120 forms a cavity with one open end, and the pixel stack structure 110 is located inside this cavity. The inner sidewall of the cavity corresponds to the sidewall that wraps around the pixel stack structure 110, the top of the cavity corresponds to the driving side that covers the pixel stack structure 110, and the opening of the cavity corresponds to the light-emitting side of the pixel stack structure 110.

[0096] The reflector cup structure 120 and the pixel stack structure 110 are spaced apart, meaning that gaps exist between the inner sidewall of the reflector cup structure 120 and the sidewall of the pixel stack structure 110, as well as between the top of the reflector cup structure 120 and the driving side of the pixel stack structure 110. The width of the gap between the reflector cup structure 120 and the pixel stack structure 110 can be set according to the actual size requirements of the light-emitting device and is not limited. In one example, a passivation layer is formed between the reflector cup structure 120 and the pixel stack structure 110 to ensure that the reflector cup structure 120 and the pixel stack structure 110 are spaced apart.

[0097] In one example, the reflector cup structure 120 is made of a material with high reflectivity and low light absorption, which can be an insulating material or a non-insulating material. In another example, the inner wall of the reflector cup structure 120 can be designed as a curved surface, and the radius of curvature of the curved surface matches the size of the pixel stack structure 110, which can further improve the light-gathering effect and allow more light to be reflected to the light-emitting side.

[0098] The aforementioned light-emitting device includes a light-emitting layer structure 10; the light-emitting layer structure 10 includes: a pixel stack structure 110, the cross-sectional shape of the pixel stack structure 110 being trapezoidal, with the lower base of the trapezoid serving as the light-emitting side of the pixel stack structure 110 and the upper base serving as the driving side of the pixel stack structure 110; and a reflector cup structure 120, disposed around the sidewalls and driving side of the pixel stack structure 110 and spaced apart from the pixel stack structure 110. By designing the inverted trapezoidal pixel stack structure 110, the width of the light-emitting side of the pixel stack structure 110 is greater than the width of the driving side, correspondingly reducing the probability of light generated by the sidewalls of the pixel stack structure 110 being blocked, allowing more side light to propagate to the light-emitting side, reducing light loss, and improving light extraction efficiency. By setting a reflective cup structure 120 around the pixel stack structure 110, the high reflectivity of the inner sidewall of the reflective cup structure 120 reflects the light generated by the pixel stack structure 110, preventing light from scattering in all directions and converging the scattered light to the light-emitting side, thus significantly improving the light extraction efficiency of the light-emitting device. Simultaneously, the spaced arrangement of the reflective cup structure 120 with the pixel stack structure 110 avoids direct contact between them, preventing electrical short circuits that could affect pixel driving and minimizing light absorption and loss by the reflective cup material, further improving light utilization.

[0099] In one exemplary embodiment, such as Figure 2 and Figure 3 As shown, the pixel stack structure 110 includes a first electrode layer 111, a first conductivity type semiconductor layer 112, and an active layer 113 stacked sequentially along a first direction, the first direction being the direction from the driving side of the pixel stack structure 110 to the light-emitting side; the light-emitting layer structure 10 further includes: a second conductivity type semiconductor layer 130 disposed on the side of the active layer 113 away from the first conductivity type semiconductor layer 112; a second electrode layer 140 disposed on the side of the second conductivity type semiconductor layer 130 away from the active layer 113; and a lens layer 150 disposed on the side of the second electrode layer 140 away from the second conductivity type semiconductor layer 130; the orthographic projection of the second conductivity type semiconductor layer 130, the second electrode layer 140, and the lens layer 150 along a second direction covers the orthographic projection of the pixel stack structure 110 and the reflector cup structure 120 along the second direction, the second direction being the direction from the light-emitting side of the pixel stack structure 110 to the driving side.

[0100] The first direction is Figure 2 The X direction in the text refers to the direction from the driving side to the light-emitting side of the pixel stack structure 110, and the second direction is... Figure 2 The Y direction in the text refers to the direction from the light-emitting side of the pixel stack structure 110 to the driving side, which are two opposite directions.

[0101] Specifically, the first electrode layer 111 is used to realize the electrical connection between the pixel stack structure 110 and the driving layer structure, and may specifically include, for example: Figure 2 The first transparent conductive layer 1111 and the first metal conductive layer 1112 shown can also be as follows: Figure 3 As shown, it only includes the first transparent conductive layer 1111. The size of the first electrode layer 111 is the size of the driving side (top bottom edge) of the pixel stack structure 110.

[0102] The first conductivity type semiconductor layer 112, the active layer 113, and the second conductivity type semiconductor layer 130 are combined to form a semiconductor light-emitting epitaxial layer. Industry-standard descriptions generally use the term "epitaxy stack." These three layers work together to complete the entire process of carrier injection, recombination, and light emission, forming a key component in the light-emitting device to achieve the core light-emitting function. The types of the first conductivity type semiconductor layer 112, the active layer 113, and the second conductivity type semiconductor layer 130 are not limited in this embodiment. For example, the first conductivity type semiconductor layer 112 can be, but is not limited to, a P-type gallium nitride layer, which is a hole transport semiconductor layer responsible for providing a channel for hole transport to the active layer 113. The second conductivity type semiconductor layer 130 can be, but is not limited to, an N-type gallium nitride layer, which is an electron transport semiconductor layer responsible for providing a channel for electron transport to the active layer 113. The active layer 113 corresponds to the multiple quantum well (MQW) light-emitting layer, which is the core region for carrier recombination light emission. The number of multiple quantum well layers and the thickness of the well barrier can be adjusted according to the required emission wavelength (such as red light, green light, and blue light) to determine the emission wavelength and luminous efficiency of the light-emitting device.

[0103] The second electrode layer 140 is a transparent conductive layer (such as an ITO electrode) to ensure smooth light emission without obstructing the light path. The lens layer 150 is made of a high-transmittance and high-refractive-index material, and its surface can be designed as an arc-shaped structure to further converge the light from the emission side, reduce light divergence loss, and improve the light emission concentration of the light-emitting device. Corresponding to the example above where the first conductive semiconductor layer 112 is a P-type gallium nitride layer and the second conductive semiconductor layer 130 is an N-type gallium nitride layer, the first electrode layer 111 is a P-type electrode layer, such as including a P-ITO electrode, and the second electrode layer 140 is an N-type electrode layer, such as including an N-ITO electrode.

[0104] In some examples, the metallic conductive layer can be prepared using electroplating or sputtering processes, with a thickness between 100nm and 110nm. Materials include, but are not limited to, single metals such as gold, silver, chromium, aluminum, or nickel, as well as multilayer alloys such as Ti / Al / Ti / Au. For the transparent conductive layer, materials include, but are not limited to, ITO, Ni / Au alloys, or graphene, with a light transmittance in the range of 80%-100%.

[0105] It is understood that when the pixel stacked structure 110 includes a first electrode layer 111, a first conductivity type semiconductor layer 112 and an active layer 113 stacked sequentially along a first direction, the cross-sectional shape of the first electrode layer 111, the first conductivity type semiconductor layer 112 and the active layer 113 is consistent with the cross-sectional shape of the pixel stacked structure 110, which is an inverted trapezoid.

[0106] Furthermore, the orthographic projection of the second conductive semiconductor layer 130, the second electrode layer 140, and the lens layer 150 along the Y direction covers the orthographic projection of the pixel stack structure 110 and the reflector cup structure 120 along the Y direction. This ensures that all the light reflected by the reflector cup structure 120 can pass through the second conductive semiconductor layer 130, the second electrode layer 140, and the lens layer 150, avoiding light leakage or obstruction and further ensuring light extraction efficiency. At the same time, it also provides a certain degree of protection for the pixel stack structure 110 and the reflector cup structure 120, improving structural stability.

[0107] In one exemplary embodiment, such as Figure 4 As shown, one end of the reflector cup structure 120 near the light-emitting side of the pixel stack structure 110 is electrically connected to the second conductivity type semiconductor layer 130.

[0108] Specifically, the reflective cup structure 120 in this embodiment is fabricated using a conductive metallic reflective material. This material includes, but is not limited to, highly reflective single-metal materials such as gold, silver, chromium, aluminum, or nickel, as well as multilayer alloy materials such as Ti / Al / Ti / Au. During fabrication, a thin insulating passivation layer is deposited on the surfaces of the pixel stack structure 110 and the second conductive semiconductor layer 130 to meet insulation requirements. The passivation layer is removed only at the locations where it connects to the second conductive semiconductor layer 130 to expose the second conductive semiconductor layer 130, thereby achieving electrical connection between the reflective cup structure 120 and the second conductive semiconductor layer 130. In some examples, see... Figure 4 Furthermore, a connection groove extending to the second conductive type semiconductor layer 130 can be formed at the location where it is connected to the second conductive type semiconductor layer 130 to ensure that the two form a good ohmic contact.

[0109] It is understood that the second conductive semiconductor layer 130 serves as the cathode of the light-emitting device. Since the reflective cup structure 120 is made of a metallic material and is conductive, after the reflective cup structure 120 and the second conductive semiconductor layer 130 form an ohmic contact, the entire reflective cup structure 120 is connected to the cathode of the light-emitting device. The low resistivity of the metallic material can significantly reduce the overall resistance of the cathode, which is more conducive to the lateral conduction of current, thereby reducing the voltage. After multiple light-emitting layer structures are arrayed in the light-emitting device, the multiple light-emitting layer structures are connected to a common cathode potential through the second conductive semiconductor layer 130 and the entire reflective cup structure 120. This can reduce the resistance of the cathode, thereby reducing the voltage drop (IRdrop) of the cathode voltage in the display panel, and ultimately improving the uniformity of the displayed image.

[0110] It should be noted that the connection area between the reflector cup structure 120 and the second conductive semiconductor layer 130 is only the edge electrical contact area of ​​the second conductive semiconductor layer 130, that is, the area on both sides of the pixel stack structure 110. It does not cover the contact area between the reflector cup structure 120 and the active layer 113, and does not affect the hole transport function and light emission path of the second conductive semiconductor layer 130, thus avoiding affecting the carrier transport and light emission.

[0111] In one exemplary embodiment, refer to Figure 2 The first electrode layer 111 includes a first metal conductive layer 1112 and a first transparent conductive layer 1111 stacked sequentially along a first direction.

[0112] Specifically, the first transparent conductive layer 1111 is disposed close to the first conductive type semiconductor layer 112, forming good electrical contact with the first conductive type semiconductor layer 112. The first metal conductive layer 1112 is disposed on the side of the first transparent conductive layer 1111 away from the first conductive type semiconductor layer 112, serving as the driving side of the pixel stack structure 110. The main function of the first metal conductive layer 1112 and the first transparent conductive layer 1111 is to serve as P electrodes, achieving efficient electrical connection with the driving layer structure, reducing electrode contact resistance, and improving driving signal transmission efficiency.

[0113] In one exemplary embodiment, please continue to refer to Figure 2 A through hole 121 is provided on the reflective cup structure 120 near the driving side of the pixel stack structure 110.

[0114] It is understood that the reflective cup structure 120 is arranged around the sidewall and driving side of the pixel stack structure 110. If its top area near the driving side is completely covered, it will block the bonding part between the first electrode layer 111 and the driving layer structure, as well as the electrical connection path with the driving layer structure, causing the driving signal to be unable to be transmitted normally to the pixel stack structure 110, affecting the normal driving of the light-emitting device.

[0115] Furthermore, in order to avoid obstructing the electrical connection path between the P electrode on the driving side and the driving layer structure, a via 121 needs to be formed in the reflective cup structure 120 near the driving side of the pixel stack structure 110. The position of the via 121 precisely corresponds to the bonding area of ​​the first electrode layer 111, and the size of the via 121 needs to be slightly larger than the size of the bonding area to ensure that the electrical connection between the first electrode layer 111 and the driving layer structure is fully exposed and not obstructed by the reflective cup structure 120, thus ensuring smooth transmission of the driving signal. At the same time, it does not affect the wrapping of the reflective cup structure 120 around the sidewall of the pixel stack structure 110 and other areas on the driving side, ensuring that its light reflection function is not affected.

[0116] To further explain, the shape of the through-hole 121 can be designed according to the shape of the bonding area of ​​the first electrode layer 111, preferably circular or square, and the diameter or side length can be designed according to the specific size requirements of the light-emitting device. In some examples, the inner wall of the through-hole 121 is made of the same material as the reflector cup structure 120 and is smoothed to avoid light scattering loss.

[0117] In one exemplary embodiment, such as Figure 5 As shown, the light-emitting layer structure 10 further includes: a first pad 160, which is disposed on the side of the reflective cup structure 120 away from the pixel stack structure 110, and the first pad 160 is electrically connected to the first metal conductive layer 1112 via a through hole 121.

[0118] Specifically, the first pad 160 can be electrically connected to the first metal conductive layer 1112 by forming an interconnect structure within the via 121.

[0119] For example, the interconnect structure can be a copper interconnect structure including copper conductive plugs and copper pads. During fabrication, a filling dielectric layer is first formed on the side of the reflective cup structure 120 away from the pixel stack structure 110. Then, interconnect holes and grooves are formed at corresponding positions of the through-holes 121 within the filling dielectric layer. Finally, copper material is filled to form copper conductive plugs at the interconnect hole positions and copper pads at the groove positions. The copper pad is the first pad 160. It can be understood that the copper conductive plug fills the interior of the through-hole 121 and is spaced apart from the inner wall of the through-hole 121. The filling dielectric layer acts as insulation to prevent erroneous transmission of drive signals. Furthermore, the copper conductive plug can be integrally formed with the copper pad, and the tail end of the copper conductive plug is in close contact with the exposed first metal conductive layer 1112, forming a good ohmic contact. This achieves a stable electrical connection between the first pad 160 and the first metal conductive layer 1112, ensuring smooth transmission of drive signals.

[0120] In one exemplary embodiment, refer to Figure 3 The first electrode layer 111 includes a first transparent conductive layer 1111.

[0121] Specifically, in this embodiment, the first electrode layer 111 only includes a first transparent conductive layer 1111, which is made of a transparent conductive material with high light transmittance and high conductivity such as ITO and IZO. It is disposed along the first direction (from the driving side of the pixel stacked structure 110 to the light-emitting side) on the side of the first conductive type semiconductor layer 112 away from the active layer 113, forming a good ohmic contact with the first conductive type semiconductor layer 112. It is responsible for realizing the electrical signal transmission between the pixel stacked structure 110 and the driving layer structure, while ensuring that the light generated by the pixel stacked structure 110 can penetrate into the reflector cup structure 120 without obstruction. The high reflectivity inner sidewall of the reflector cup structure reflects the light generated by the pixel stacked structure, avoiding light loss, and all of it is concentrated to the light-emitting side for emission, which significantly improves the light emission efficiency of the light-emitting device.

[0122] In one exemplary embodiment, such as Figure 6 As shown, a through-hole 121 is provided in the reflector cup structure 120 near the driving side of the pixel stack structure 110. The light-emitting layer structure 10 also includes a first metal conductive layer 170, which extends from the side of the reflector cup structure 120 away from the driving side of the pixel stack structure 110, through the through-hole 121 to the inner side of the reflector cup structure 120, and is electrically connected to the first transparent conductive layer 1111.

[0123] Specifically, the first metal conductive layer 170 covers the side of the reflective cup structure 120 away from the driving side of the pixel stack structure 110, and has a protrusion at the position of the through hole 121. The protrusion extends through the through hole 121 to the inner side of the reflective cup structure 120 and is electrically connected to the first transparent conductive layer 1111 to form a P electrode.

[0124] It is understandable that by not placing the metal conductive layer within the pixel stack structure 110, and instead having the pixel stack structure 110 contain only a transparent conductive layer, not only can the light emission efficiency be improved, but the size of the metal conductive layer is also not limited by the cross-sectional size of the pixel stack structure 110. The portion laid on the outside of the reflector cup structure 120 can be relatively elongated to form a larger P-electrode, achieving better ohmic contact with the driving layer structure and improving the transmission quality of the driving signal.

[0125] In one exemplary embodiment, continuing with reference to Figure 6 The light-emitting layer structure 10 further includes: a first pad 160, which is disposed on the side of the first metal conductive layer 170 away from the reflector cup structure 120 and is electrically connected to the first metal conductive layer 170.

[0126] Specifically, the electrical connection between the first pad 160 and the first conductive metal layer 170 can also be achieved by forming an interconnect structure inside the protrusion of the first conductive metal layer 170. This interconnect structure can be a copper interconnect structure including a copper conductive plug and a copper pad, with the copper conductive plug disposed inside the protrusion of the first conductive metal layer 170 and the copper pad serving as the first pad 160. The fabrication process is described above and will not be repeated here.

[0127] In one exemplary embodiment, such as Figure 7 or Figure 8 As shown, the light-emitting device further includes a driving layer structure 20, including a driving circuit 210 and a second pad 220, the second pad 220 being electrically connected to the driving circuit 210; wherein the driving layer structure 20 and the light-emitting layer structure 10 are bonded together after contacting the first pad 160 via the second pad 220.

[0128] Specifically, the driving layer structure 20 is the driving core of the light-emitting device, used to provide a stable driving signal to the light-emitting layer structure 10, control the light emission brightness of the pixel stack structure 110, and, in the scenario where multiple light-emitting layer structures 10 are distributed in an array, also control the light emission timing of the pixel stack structure 110 in each light-emitting layer structure 10. The core component of the driving layer structure 20 is the driving circuit 210, which can be a CMOS driving circuit and integrated on a CMOS driving backplane. It can be understood that, in the scenario where multiple light-emitting layer structures 10 are distributed in an array, the driving layer structure 20 and the pixel stack structure 110 in each light-emitting layer structure 10 achieve one-to-one driving control, ensuring that each pixel is independently controllable and adapting to the high resolution requirements of Micro-LED displays.

[0129] Furthermore, the second pad 220 is disposed on the side of the driving layer structure 20 near the light-emitting layer structure 10, and is stably electrically connected to the driving circuit 210 via metal leads. The material and size of the second pad 220 are compatible with the first pad 160, and copper is preferred to ensure precise contact between the two, avoiding poor contact. The bonding method between the driving layer structure 20 and the light-emitting layer structure 10 is as follows: the second pad 220 of the driving layer structure 20 is precisely aligned with the first pad 160 of the light-emitting layer structure 10, making them in close contact, and a thermosetting bonding process is used to bond and fix them together, while simultaneously completing the electrical connection.

[0130] In one exemplary embodiment, please continue to refer to Figure 7 or Figure 8 The light-emitting layer structure 10 also includes a first bonding layer 180, and the driving layer structure 20 also includes a second bonding layer 230. The driving layer structure 20 and the light-emitting layer structure 10 are bonded together after contacting each other via the first bonding layer 180 and the second bonding layer 230.

[0131] Specifically, the first bonding layer 180 is disposed on the side of the light-emitting layer structure 10 near the driving layer structure 20, covering the peripheral area of ​​the first pad 160 and flush with the first pad 160. The second bonding layer 230 is disposed on the side of the driving layer structure 20 near the light-emitting layer structure 10, covering the peripheral area of ​​the second pad 220 and flush with the second pad 220. The two layers are precisely aligned to ensure full adhesion upon contact.

[0132] In one example, both the first bonding layer 180 and the second bonding layer 230 are made of SiCN (silicon carbon nitride), with a uniform thickness controlled between 50-80 nm. SiCN material possesses excellent insulation properties and chemical stability, preventing copper diffusion during the thermo-bonding process of the first pad 160 and the second pad 220. It also prevents leakage current, ensuring electrical isolation in the bonding area and avoiding the diffusion of copper atoms from the copper pads into the surrounding insulating structure, which could lead to short circuits or signal interference.

[0133] Specifically, the driving layer structure 20 and the light-emitting layer structure 10 can achieve Cu-Cu mixed bonding through the first bonding layer 180 and the second bonding layer 230, as well as the first pad 160 and the second pad 220. Firstly, during the bonding process of the first pad 160 and the second pad 220, under preset temperature and pressure conditions, copper atoms diffuse into each other, forming a metallurgical bond and a stable conductive path. This significantly reduces contact resistance, improves the driving signal transmission efficiency, and reduces the thickness of the bonding structure, adapting to the miniaturization requirements of Micro-LED devices. Secondly, the first bonding layer 180 and the second bonding layer 230 form stable covalent bonds with the surrounding dielectric layer through chemical bonds. This not only enhances the mechanical connection strength between the driving layer structure 20 and the light-emitting layer structure 10, preventing the bonding area from detaching or loosening, but also further strengthens the electrical isolation effect. Combined with the anti-copper diffusion effect of SiCN material, this provides double protection against leakage and short circuits, safeguarding the integrity of the core structure.

[0134] In one exemplary embodiment, such as Figure 9 As shown, the driving layer structure 20 includes a plurality of second pads 220, all of which are electrically connected to the driving circuit 210; there are a plurality of light-emitting layer structures 10, all of which are bonded to the driving layer structure 20, and the first pad 160 of each light-emitting layer structure 10 is respectively configured to correspond one-to-one with different second pads 220.

[0135] It is understood that the structure provided in this embodiment includes multiple light-emitting layer structures 10 to form multiple pixel structures, adapting to the display requirements of multi-pixel arrays, realizing the integrated driving of multiple light-emitting units, and adapting to the application scenarios of Micro-LED high resolution and high integration.

[0136] Specifically, the driving circuit 210 of the driving layer structure 20 can be designed in an array, integrating multiple independent driving units, each of which is electrically connected to a second pad 220. Multiple second pads 220 are arranged according to a preset array pattern on the side of the driving layer structure 20 closest to the light-emitting layer structure 10. Combined with the spacing control between adjacent second pads 220, this ensures that multiple light-emitting layer structures 10 can be tightly arranged while avoiding electrical short circuits between adjacent pads. The spacing can be flexibly adjusted according to the size of the light-emitting layer structure 10.

[0137] Furthermore, the number of second pads 220 corresponds one-to-one with the number of first pads 160, and their positions are precisely aligned with the first pads 160, ensuring that each first pad 160 can make contact and bond with the corresponding second pad 220, thus ensuring that the driving signal of the driving layer structure 20 can be accurately transmitted to the pixel stack structure 110 of each light-emitting layer structure 10.

[0138] In one exemplary embodiment, such as Figure 10 As shown, a method for fabricating a light-emitting device is provided, the method comprising the following steps S201 to S205, wherein:

[0139] Step S201: Provide a temporary substrate on which an epitaxial stack is formed;

[0140] Step S202: The epitaxial stack is patterned to form a pixel stack structure with a trapezoidal cross-sectional shape. The side closer to the temporary substrate is the lower base of the trapezoid, which serves as the light-emitting side of the pixel stack structure, and the side farther from the temporary substrate is the upper base of the trapezoid, which serves as the driving side of the pixel stack structure.

[0141] Step S205: A reflective cup structure is formed on the pixel stack structure. The reflective cup structure is arranged around the sidewall and driving side of the pixel stack structure and is spaced apart from the pixel stack structure.

[0142] Temporary substrates refer to substrate structures used to support epitaxial layers during the fabrication of light-emitting devices, providing temporary support and being removable in subsequent processes. Their core function is to ensure the growth quality of epitaxial layers and the stability of subsequent patterning processes, which is different from the substrate supporting the final light-emitting device.

[0143] Epitaxial stacks refer to multilayer semiconductor thin film stacks formed on a temporary substrate through epitaxial growth processes. They possess light-emitting capabilities and are the core functional layers for light-emitting devices. Typically, they include a first conductivity type semiconductor material layer, an active material layer, and a second conductivity type semiconductor material layer. In some cases, auxiliary functional layers such as electron blocking layers and hole blocking layers can be added to optimize carrier injection efficiency and light-emitting performance. In one example, the first conductivity type semiconductor material layer is a P-type gallium nitride layer, the second conductivity type semiconductor material layer is an N-type gallium nitride layer, and the active material layer is a multi-quantum-well light-emitting layer.

[0144] Specifically, the temporary substrate can be made of substrate materials with good thermal stability and epitaxial compatibility, such as sapphire, silicon carbide, or aluminum nitride. The size of the temporary substrate can be selected according to the actual device fabrication requirements, typically 4 inches, 8 inches, or 12 inches, and the surface is polished to ensure the flatness of the epitaxial stack. The epitaxial stack is formed on the temporary substrate using a metal-organic chemical vapor deposition (MOCVD) process. In this embodiment, to facilitate subsequent hybrid bonding with the 8-inch or 12-inch drive layer structure, an 8-inch or 12-inch silicon-based epitaxial wafer is selected accordingly.

[0145] Further, the epitaxial stack is patterned through exposure, development, etching, and resist removal to form multiple independent pixel stack structures, each with a trapezoidal cross-sectional shape. The side closer to the temporary substrate forms the lower base of the trapezoid, serving as the light-emitting side of the pixel stack structure, while the side farther from the temporary substrate forms the upper base, serving as the driving side. After depositing an insulating layer on the surface of the formed pixel stack array, a reflective layer is deposited using electron beam evaporation or sputtering to form a reflective cup structure. The reflective cup structure is positioned around the sidewalls and driving side of the pixel stack structure, and is spaced apart from the pixel stack structure.

[0146] In this embodiment, the pixel stack structure in the fabricated light-emitting device is an inverted trapezoid, making the width of the light-emitting side of the pixel stack structure greater than the width of the driving side. This reduces the probability of light generated by the sidewalls of the pixel stack structure being blocked, allowing more side light to propagate to the light-emitting side, reducing light loss, and improving light extraction efficiency. By setting a reflective cup structure around the pixel stack structure, the high reflectivity of the inner sidewall of the reflective cup structure reflects the light generated by the pixel stack structure, preventing light from scattering in all directions and converging the scattered light to the light-emitting side, significantly improving the light extraction efficiency of the light-emitting device. At the same time, the spaced arrangement between the reflective cup structure and the pixel stack structure avoids direct contact between them, preventing electrical short circuits that could affect pixel driving and avoiding light absorption and loss by the reflective cup material, further improving light utilization.

[0147] In an exemplary embodiment, the epitaxial stack includes a first electrode material layer, a first conductivity type semiconductor material layer, an active material layer, and a second conductivity type semiconductor material layer stacked sequentially along a first direction, where the first direction is the direction pointing from the thickness direction of the epitaxial stack to the temporary substrate. Exemplarily, step S202 includes: patterning the first electrode material layer, the first conductivity type semiconductor material layer, and the active material layer in the epitaxial stack to obtain a pixel stack structure including the first electrode layer, the first conductivity type semiconductor material layer, and the active layer stacked sequentially along the first direction.

[0148] Specifically, during the patterning process of the epitaxial stack, by controlling the etching depth, only the first electrode material layer, the first conductivity type semiconductor material layer, and the active material layer in the first direction are etched to form an independent pixel stack structure. The unetched second conductivity type semiconductor material layer can then serve as the common cathode for each pixel structure in the light-emitting device.

[0149] In one exemplary embodiment, such as Figure 11 As shown, before step S205, step S203 is also included: forming a first passivation layer on the pixel stack structure, the first passivation layer covering the sidewall and driving side of the pixel stack structure; a reflective cup structure is formed on the surface of the first passivation layer away from the pixel stack structure.

[0150] Specifically, the first passivation layer is a thin film layer formed on the surface of the pixel stack structure to protect and insulate the pixel stack structure. At the same time, it achieves insulation and isolation between the pixel stack structure and the subsequent reflective cup structure, avoiding electrical short circuits caused by direct contact between the two, and ensuring the working stability and service life of the device.

[0151] For example, a first passivation layer can be deposited on the sidewalls and driving sides of the pixel stack structure, as well as on the surface of the unetched second conductivity type semiconductor layer, using an atomic layer deposition (ALD) method. The preferred material is SiOx or SiNx.

[0152] In one exemplary embodiment, please continue to refer to Figure 11 After step S203 and before step S205, step S204 is also included: etching the first passivation layer and the second conductive semiconductor material layer to form connection grooves on opposite sides of the pixel stack structure. The connection grooves penetrate the first passivation layer along the first direction and extend into the second conductive semiconductor material layer; the reflective cup structure also extends into the connection grooves.

[0153] Specifically, the connection groove refers to a groove structure formed by etching on both sides of the pixel stack structure. By removing the first passivation layer and then etching downwards into the second conductive semiconductor material layer, a groove structure is formed in the second conductive semiconductor material layer. Further, after forming the connection groove in step S204, step S205 involves forming a reflective cup structure on the first passivation layer, and the reflective cup structure can be deposited and extended into the connection groove, achieving electrical connection between the reflective cup structure and the second conductive semiconductor layer.

[0154] In this embodiment, after the reflective cup structure forms an ohmic contact with the second conductivity type semiconductor layer, the entire reflective cup structure is connected to the cathode of the light-emitting device. The low resistivity of the metal material can significantly reduce the overall resistance of the cathode, which is more conducive to the lateral conduction of current, thereby reducing the voltage. Furthermore, after multiple light-emitting layer structures are arrayed in the light-emitting device, these multiple light-emitting layer structures are connected to the entire reflective cup structure through the second conductivity type semiconductor layer to form a common cathode potential. This reduces the cathode resistance, thereby reducing the voltage drop (IR drop) of the cathode voltage within the display panel, ultimately improving the uniformity of the displayed image.

[0155] In an exemplary embodiment, the first electrode layer includes a first metal conductive layer and a first transparent conductive layer stacked sequentially along a first direction; such as Figure 12 As shown, after step S205, the above-mentioned method for fabricating the light-emitting device further includes steps S206 to S208, wherein:

[0156] Step S206: A via is formed at the position of the reflective cup structure near the driving side of the pixel stack structure, and the via exposes the first passivation layer;

[0157] Step S207: A filling dielectric layer is formed, which fills the through-hole and covers the reflective cup structure;

[0158] In step S208, a first pad is formed in the filling dielectric layer, and the first pad is electrically connected to the first metal conductive layer through a via.

[0159] Specifically, the via is a through structure formed by etching near the driving side of the pixel stack structure in the reflective cup structure. It is used to provide an electrical connection channel between the first pad and the first electrode layer that are subsequently fabricated, laying the foundation for introducing driving signals into the pixel stack structure.

[0160] Furthermore, the electrical connection between the first pad and the first conductive metal layer can be achieved by forming an interconnect structure within the via. Specifically, after forming a filling dielectric layer to fill the via and cover the reflector cup structure, interconnect holes and grooves can be formed within the filling dielectric layer. The interconnect holes are located at the via locations and expose the first conductive metal layer, while the grooves are located on the side of the interconnect holes away from the first conductive metal layer and are connected to the interconnect holes. A first interconnect structure is then formed within the interconnect holes, and a first pad is formed within the grooves. The first pad can be electrically connected to the first conductive metal layer via the first interconnect structure. The first interconnect structure can be formed within the interconnect holes by filling with copper material. Correspondingly, the first interconnect structure can be a copper conductive plug, and the first pad is a copper pad. Both can be integrally formed to achieve a stable electrical connection between the first pad and the first conductive metal layer, ensuring smooth transmission of the drive signal.

[0161] In one exemplary embodiment, the first electrode layer includes a first transparent conductive layer; as... Figure 13 As shown, after step S205, the above-mentioned method for fabricating the light-emitting device further includes steps S209 to S214, wherein:

[0162] Step S209: A via is formed at the position of the reflective cup structure near the driving side of the pixel stack structure. The via penetrates the reflective cup structure and the first passivation layer along the first direction and exposes the first transparent conductive layer.

[0163] Step S210: A second passivation layer is formed, which covers the exposed first transparent conductive layer and the surface of the reflective cup structure away from the first passivation layer.

[0164] Step S211: Form a via. The via is located at the position of the through hole, penetrates the second passivation layer along the first direction, and exposes the first transparent conductive layer. The width of the via is smaller than the width of the through hole.

[0165] Step S212: A first metal conductive layer is formed. The first metal conductive layer extends from the surface of the second passivation layer away from the driving side of the pixel stack structure through a via to the inside of the reflective cup structure and is electrically connected to the first transparent conductive layer.

[0166] Step S213: A filling dielectric layer is formed, which fills the first metal conductive layer and covers the second passivation layer.

[0167] Step S214: A first pad is formed in the filling dielectric layer, and the first pad is electrically connected to the first metal conductive layer.

[0168] Specifically, the first metal conductive layer formed in step S212 covers the side of the reflective cup structure away from the driving side of the pixel stack structure, and has a protrusion at the position of the through hole. The protrusion extends to the inner side of the reflective cup structure through the through hole and via, and is electrically connected to the first transparent conductive layer.

[0169] Furthermore, the first pad can also be electrically connected to the first metal conductive layer by forming an interconnect structure inside the protrusion of the first metal conductive layer. Specifically, after forming a filling dielectric layer to fill the via and cover the second passivation layer, interconnect holes and grooves can be formed within the filling dielectric layer. The interconnect holes are located at the positions of vias and expose the first metal conductive layer, while the grooves are located on the side of the interconnect holes away from the first metal conductive layer and are connected to the interconnect holes. A first interconnect structure is then formed within the interconnect holes, and a first pad is formed within the grooves. The first pad can be electrically connected to the first metal conductive layer via the first interconnect structure.

[0170] In this embodiment, the metal conductive layer is not placed inside the pixel stack structure; the pixel stack structure only contains a transparent conductive layer, which not only improves light emission efficiency, but also allows the size of the metal conductive layer to be independent of the cross-sectional size of the pixel stack structure. The portion laid on the outside of the reflector cup structure can be relatively elongated to form a larger P-electrode, achieving better ohmic contact with the driving layer structure and improving the transmission quality of the driving signal.

[0171] In an exemplary embodiment, before forming the first pad in step S208 or before forming the first pad in step S214, the fabrication method of the light-emitting device further includes the following steps: forming a first bonding layer on the surface of the filling dielectric layer away from the temporary substrate; the groove in the interconnect structure penetrates the first bonding layer along a first direction and extends into the filling dielectric layer.

[0172] In one exemplary embodiment, such as Figure 14 As shown, after forming the first pad in step S208, or after forming the first pad in step S214, the above-mentioned method for fabricating the light-emitting device further includes the following steps S215 to S218, wherein:

[0173] Step S215: Provide a driving layer structure, which includes a driving circuit and a second pad, wherein the second pad is electrically connected to the driving circuit.

[0174] Step S216: Bond the first pad to the second pad accordingly;

[0175] Step S217: Remove the temporary substrate;

[0176] In step S218, a second electrode layer and a lens layer are sequentially formed on the side of the second conductivity type semiconductor material layer away from the active layer.

[0177] It should be noted that when fabricating the driving layer structure, before forming the second pad, a second bonding layer must first be formed in the driving layer structure, and then the second pad is formed on the surface of the second bonding layer. The surface of the second bonding layer away from the driving layer structure is flush with the surface of the second pad away from the second interconnect structure.

[0178] The solution provided by the method for fabricating this light-emitting device is similar to the solution described in the above-mentioned light-emitting device. Therefore, the specific limitations of the one or more light-emitting device fabrication method embodiments provided above can be found in the limitations of the light-emitting device above, and will not be repeated here.

[0179] The following describes the fabrication process of the light-emitting device provided in this application using three specific fabrication method examples.

[0180] Example 1, refer to Figure 15 A method for fabricating a light-emitting device is provided to obtain... Figure 9 The light-emitting device shown, Figure 16 The image shown is a top view of the fabricated light-emitting device.

[0181] Step 1: Select a standard semiconductor manufacturing size (8-inch or 12-inch diameter) silicon substrate wafer (i.e., a temporary substrate). On this silicon substrate wafer, use a metal-organic chemical vapor deposition (MOCVD) apparatus to epitaxially grow a gallium nitride (GaN) base epitaxial wafer under high temperature and a precisely controlled gas atmosphere. This epitaxial wafer typically includes, from bottom to top: an N-type doped GaN layer (i.e., the second conductivity type semiconductor material layer), a multiple quantum well active light-emitting layer (i.e., the active material layer), and a P-type doped GaN layer (i.e., the first conductivity type semiconductor material layer). Specifically... Figure 15 As shown in (a).

[0182] Step 2: Prepare the P-type transparent conductive layer and the composite electrode (i.e., the first electrode material layer), as detailed below. Figure 15 As shown in (b), on the top layer of the epitaxial wafer, a thin film of indium tin oxide (ITO) is first deposited using magnetron sputtering as a P-type transparent conductive layer, typically 110 nm thick. Subsequently, without breaking the vacuum or in the same sputtering system, three metal stacks are deposited consecutively: first a titanium layer (as an adhesion layer), then an aluminum layer (as the main conductive layer), and finally a titanium nitride layer (as an anti-oxidation and etch stop layer). This titanium / aluminum / titanium nitride stack (Ti / Al / TiN stack), together with the underlying indium tin oxide (P-ITO), constitutes the complete P-type electrode (i.e., the first electrode layer).

[0183] Step 3: Graphical processing, specifically as follows Figure 15As shown in (c), a mesa mask is used for ultraviolet light exposure in a photolithography machine. Through a patterning process of exposure, development, etching, and stripping, a pixel stack structure is formed. The pattern on the mask defines the shape and array arrangement of each individual pixel stack structure. Specifically, the unprotected titanium / aluminum / titanium nitride metal layer is etched away first, followed by the etching of the underlying indium tin oxide layer. Finally, the P-type gallium nitride and quantum well active layer are etched downwards until the N-type gallium nitride layer is etched, forming isolated pixel stack structures with a cross-sectional shape resembling a trapezoid. The pitch between each pixel stack structure is the pixel pitch of the light-emitting device.

[0184] Step 4: Passivation layer deposition, specifically as follows Figure 15 As shown in (d), an atomic layer deposition (ALD) method is used to deposit a passivation layer (PV layer, i.e., the first passivation layer) on the surface of the patterned pixel stack structure. The passivation layer is made of SiOx or SiNx material and is used to protect the sidewalls of the pixel stack structure and achieve electrical isolation of the P electrode.

[0185] Step 5: Fabrication of the reflector cup structure and opening of the through-hole, as detailed below. Figure 15 As shown in (e), a reflective layer (i.e., a reflective cup structure) is deposited using sputtering. This reflective layer is made of a Ti / Al / TiN stack material, and the Ti / Al / TiN thin film prepared by sputtering has high reflectivity. Subsequently, a photolithography process is performed again, using a via mask to create via 121 on the side of the reflective cup structure near the P electrode of the pixel stack structure. The Ti / Al / TiN reflective layer at the location of via 121 is removed to reserve space for the subsequent fabrication of copper pads to connect to the P electrode. That is, the Ti / Al / TiN reflective layer above the insulating layer on the P electrode is removed, as shown in the top view. Figure 16 As shown.

[0186] Step 6: Filling and planarization of the dielectric layer (i.e., the filling dielectric layer), specifically as follows: Figure 15 As shown in (f), a thick layer of tetraethyl orthosilicate silica (TEOS SiOx) was deposited using plasma-enhanced chemical vapor deposition. This film has excellent filling capability, capable of filling the deep and narrow trenches between LED pixels without gaps. The surface of the filled dielectric layer was then planarized using chemical mechanical polishing to ensure a smooth surface.

[0187] Step 7: Deposit a copper diffusion barrier layer (i.e., the first bonding layer), specifically as follows: Figure 15As shown in (g), a silicon carbonitride (SiCN) film approximately 50 nm thick is deposited on the planarized dielectric layer surface using plasma-enhanced chemical vapor deposition or atomic layer deposition. This layer acts as a diffusion barrier for copper atoms in subsequent copper-copper hybrid bonding. Without this film, copper atoms could diffuse into the surrounding insulating dielectric during high-temperature processes after bonding, leading to severe leakage or even short circuits. Silicon carbonitride exhibits superior density compared to ordinary silicon nitride, resulting in a better barrier against copper diffusion.

[0188] Step 8: Fabrication of the copper interconnect structure (i.e., the first interconnect structure and the first pad), specifically as follows: Figure 15 As shown in (h). On the surface of the silicon carbonitride barrier layer, Cu Via (copper via 161) and Cu PAD (copper pad) are fabricated using either a two-layer single-layer damascus process or a single-layer double-layer damascus process, as shown in the top view. Figure 16 As shown. Simultaneously, on the corresponding driving layer structure side surface, using the same process (two single-layer damask layers or one double-layer damask layer), Cu Via and Cu PAD structures with the same pitch as the light-emitting layer structure side are prepared to ensure the matching of the interconnect structures on both sides.

[0189] Step 9: Mixed bonding, specifically as follows Figure 15 As shown in (i), a hybrid bonding technique is used to connect the light-emitting layer structure and the driving layer structure. After hybrid bonding is completed, within the display area, the P-electrode of each light-emitting layer structure and the top Anode electrode of the corresponding driving circuit of the driving layer structure achieve complete electrical signal connection. The hybrid bonding includes: metallic bonding, which involves direct connection via atomic-level diffusion through copper (Cu) metal pads to form a conductive path, replacing traditional solder or microbumps; and dielectric bonding, which involves tight bonding via covalent bonds and other chemical bonds through the silicon oxide (SiO2) dielectric material surrounding the metal pads, achieving mechanical fixation and electrical isolation between the light-emitting layer structure and the driving layer structure.

[0190] Step 10: Remove the original substrate (i.e., the silicon substrate wafer) and thin the gallium nitride layer, as detailed below. Figure 15 As shown in (j). After hybrid bonding is completed, the original substrate in the light-emitting layer structure is thinned, and then the thinned substrate is removed. At the same time, the N-type GaN layer is thinned to meet the device structure and performance requirements.

[0191] Step 11: Fabricate the N-type common transparent cathode (i.e., the second electrode layer), specifically as follows: Figure 15As shown in (k), an N-type indium tin oxide (N-ITO) thin film is sputtered onto the thinned N-type gallium nitride surface. Then, using an N-ITO mask, an ITO common cathode pattern is fabricated from the N-ITO thin film through a lift-off patterning process. Subsequently, a SiOx layer is deposited on the surface of the ITO common cathode pattern to achieve electrical isolation and protection.

[0192] Step 12: Fabricate a microlens array (i.e., lens layer), specifically as follows: Figure 15 As shown in (l). Using a Micro Lens mask, the Micro Lens structure is formed by the following specific method: a layer of photoresist (AZ, PMMA or SU-8 type photoresist, with a thickness of 1~10 μm) is coated on the surface of the SiOx layer film; ultraviolet exposure is performed using a circular array mask; development treatment is performed to form a cylindrical photoresist structure; thermal reflow treatment is performed to form a spherical crown structure, specifically by baking at a temperature of 120~180℃, using surface tension to melt the cylindrical photoresist into a smooth spherical crown shape (i.e., photoresist microlens); etching is transferred to the SiO2 layer, and the outline of the spherical crown photoresist is transferred to the underlying SiO2 layer through a dry etching (ICP / RIE) process to form the Micro Lens structure.

[0193] Example 2, refer to Figure 17 A method for fabricating a light-emitting device is provided to obtain... Figure 18 The light-emitting device shown, Figure 19 The image shown is a top view of the fabricated light-emitting device.

[0194] In this preparation method, steps 1 to 3 and steps 6 to 11 are the same as in Example 1, and will not be described again.

[0195] Step 4: Deposition of passivation layer (i.e., first passivation layer) and opening of connection groove 131, as detailed below. Figure 17 As shown in (d) and from top view Figure 19 As shown. Using atomic layer deposition (ALD), a passivation layer (PV layer) is deposited on the surface of the patterned pixel stack structure. This passivation layer, made of SiOx or SiNx material, protects the sidewalls of the pixel stack structure and provides electrical isolation for the P-electrode. Subsequently, using an N-Via Mask, the PV passivation layer on the N-GaN layer surface is removed through a patterning process of exposure, development, etching, and stripping to form connection grooves 131. These connection grooves 131 are located at the center interval between adjacent pixel stack structures, without affecting the size of the pixel stack structure. Their positions are shown in the attached figure. Figure 19As shown in the top view.

[0196] Step 5: Fabrication of the reflector cup structure, formation of the common cathode, and opening of the through-hole, as detailed below. Figure 17 As shown in (e), a reflective layer film is deposited using sputtering. This reflective layer is a Ti / Al / TiN stacked material, and the Ti / Al / TiN film prepared by sputtering has high reflectivity. Simultaneously, the deposited Ti / Al / TiN metal film forms an ohmic contact with the exposed N-GaN layer in the connection groove (N-Via), constituting a full-surface common cathode. Subsequently, a photolithography process is performed again. Using a via mask, via 121 is created on the side of the reflective cup structure near the P electrode of the pixel stacked structure, removing the Ti / Al / TiN reflective layer at the via 121 location. Space is reserved for the subsequent fabrication of copper pads to connect the P electrode; that is, the Ti / Al / TiN reflective layer above the insulating layer on the P electrode is removed, as shown in the top view. Figure 19 As shown.

[0197] Example 3, refer to Figure 20 A method for fabricating a light-emitting device is provided to obtain... Figure 21 The light-emitting device shown.

[0198] In this preparation method, step 1 is the same as in Example 1, and will not be repeated here.

[0199] Step 2: Prepare a P-type transparent conductive layer, specifically as follows: Figure 20 As shown in (b), an indium tin oxide thin film is deposited on the top P-type doped gallium nitride layer of the epitaxial wafer using a magnetron sputtering apparatus as a P-type transparent conductive layer, with a typical thickness of 110 nanometers.

[0200] Step 3: Graphical processing 1, specifically as follows Figure 20 As shown in (c), a mesa mask is used for ultraviolet light exposure in a photolithography machine. Through a patterning process of exposure, development, etching, and stripping, a pixel stack structure is formed. The pattern on the mask defines the shape and array arrangement of each individual pixel stack structure. Specifically, the indium tin oxide layer is first etched away (leaving the first transparent conductive layer), then the P-type gallium nitride and quantum well active layers are etched downwards until the N-type gallium nitride layer is etched, forming isolated pixel stack structures with a cross-sectional shape resembling a trapezoid. The pitch between each pixel stack structure is the pixel pitch of the light-emitting device.

[0201] Step 4: Deposition of the first passivation layer and creation of the connection groove (N-Via), as detailed below. Figure 20As shown in (d), an atomic layer deposition (ALD) method is used to deposit a first passivation layer (PV1 layer) on the surface of the patterned pixel stack structure. This first passivation layer is made of SiOx or SiNx material and is used to protect the sidewalls of the pixel stack structure and achieve electrical isolation of the P electrode. Subsequently, using an N-Via Mask, the PV passivation layer on the surface of the N-GaN layer is removed through a patterning process of exposure, development, etching, and stripping to form a connection groove. This connection groove 131 is located at the center interval between adjacent pixel stack structures and does not affect the size of the pixel stack structure. Its position is shown in the attached figure. Figure 19 As shown in the top view.

[0202] Step 5: Fabrication of the reflector cup structure and formation of the common cathode, as detailed below. Figure 20 As shown in (e), a reflective thin film is deposited by sputtering. This reflective layer is made of Ti / Al / TiN stacked material, and the Ti / Al / TiN thin film prepared by sputtering has high reflectivity. At the same time, the deposited Ti / Al / TiN metal thin film forms an ohmic contact with the exposed N-GaN layer in the connecting groove 131, forming a full-surface common cathode.

[0203] Step 6: Graphical processing 2, specifically as follows Figure 20 As shown in (f). The photolithography process is performed again, using a through-hole mask (P-Via1 Mask). On the side of the reflective cup structure near the P electrode of the pixel stack structure, a through-hole 121 is made to remove the Ti / Al / TiN reflective layer and the first passivation layer (PV1 layer) at the location of the through-hole 121, so that the P-ITO electrode is exposed.

[0204] Step 7: Deposition of the second passivation layer, specifically as follows Figure 20 As shown in (g), a second passivation layer (PV2 layer) is deposited on the surface of the reflector cup structure and the exposed P-ITO electrode surface using atomic layer deposition (ALD) or plasma-enhanced chemical vapor deposition (PECVD) to achieve electrical isolation and protection for the reflector cup structure.

[0205] Step 8: Graphical processing 3, specifically as follows Figure 20 As shown in (h). Using a via mask (P-Via2 Mask), a patterning process of exposure, development, etching, and stripping is employed to remove the second passivation layer (PV2 layer) at the via location, forming a via (used to form the aforementioned copper via 161). The size of the via must be smaller than the size of the via. At this point, the P-ITO electrode is exposed again, and the second passivation layer (PV2 layer) completely covers and isolates the Ti / Al / TiN reflective layer sidewalls exposed when via 121 is opened, preventing short circuits.

[0206] Step 9: Fabrication and patterning of the P-electrode (i.e., the first metal conductive layer), as detailed below. Figure 20 As shown in (i), a Ti / Al / TiN stacked material is deposited as the P electrode. A P-PAD mask is used, and the Ti / Al / TiN stacked material is patterned through exposure, development, etching, and stripping processes. This results in an independent P electrode (Ti / Al / TiN stacked material) being formed on each pixel stacked structure, and this independent P electrode is connected to the P-ITO electrode.

[0207] Step 10: Dielectric layer (i.e., filler dielectric layer) filling and planarization, specifically as follows: Figure 20 As shown in (j), a thick layer of tetraethyl orthosilicate silica (TEOS SiOx) was deposited using plasma-enhanced chemical vapor deposition. This film has excellent filling capability, capable of filling the deep and narrow trenches between LED pixels without gaps. Then, the surface of the filled dielectric layer was planarized using chemical mechanical polishing to ensure a smooth surface.

[0208] Step 11: Deposit a copper diffusion barrier layer (i.e., the first bonding layer), specifically as follows: Figure 20 As shown in (k), a silicon carbonitride (SiCN) film approximately 50 nm thick is deposited on the planarized dielectric layer surface using plasma-enhanced chemical vapor deposition or atomic layer deposition. This layer acts as a diffusion barrier for copper atoms in subsequent copper-copper hybrid bonding. Without this film, copper atoms could diffuse into the surrounding insulating dielectric during high-temperature processes after bonding, leading to severe leakage or even short circuits. Silicon carbonitride exhibits superior density compared to ordinary silicon nitride, resulting in a better barrier against copper diffusion.

[0209] Step 12: Fabrication of the copper interconnect structure (i.e., the first interconnect structure and the first pad), specifically as follows: Figure 20 As shown in (l). On the surface of the silicon carbonitride barrier layer, Cu Via (copper via 161) and Cu PAD (copper pad) are fabricated using a two-layer single-layer damascene process or a one-layer double-layer damascene process. Simultaneously, on the corresponding driving layer structure side surface, the same process (two-layer single-layer damascene process or one-layer double-layer damascene process) is used to fabricate Cu Via and Cu PAD structures with the same pitch as the light-emitting layer structure side, ensuring the matching of the interconnect structures on both sides.

[0210] Step 13: Mixed bonding, specifically as follows Figure 20As shown in (m). A hybrid bonding technique is used to connect the light-emitting layer structure and the driving layer structure. After hybrid bonding is completed, within the display area, the P-electrode of each light-emitting layer structure and the top-level Anode electrode of the corresponding driving circuit of the driving layer structure achieve complete electrical signal connection. The hybrid bonding includes: metallic bonding, which involves direct connection via atomic-level diffusion through copper (Cu) metal pads to form a conductive path, replacing traditional solder or microbumps; and dielectric bonding, which involves tight bonding via covalent bonds and other chemical bonds through the silicon oxide (SiO2) dielectric material surrounding the metal pads, achieving mechanical fixation and electrical isolation between the light-emitting layer structure and the driving layer structure.

[0211] Step 14: Remove the original substrate (i.e., the silicon substrate wafer) and thin the gallium nitride layer, as detailed below. Figure 20 As shown in (n). After hybrid bonding is completed, the original substrate in the light-emitting layer structure is thinned, and then the thinned substrate is removed. At the same time, the N-type GaN layer is thinned to meet the device structure and performance requirements.

[0212] Step 15: Fabrication of the N-type common transparent cathode (i.e., the second electrode layer). An N-type indium tin oxide (N-ITO) thin film is sputtered onto the thinned N-type gallium nitride surface. Then, using an N-ITO mask, an ITO common cathode pattern is fabricated from the N-ITO film through a liftoff patterning process. Subsequently, a SiOx layer is deposited on the surface of the ITO common cathode pattern to achieve electrical isolation and protection.

[0213] Step 16: Fabricate a microlens array (i.e., lens layer), specifically as follows: Figure 20 As shown in (o). Using a Micro Lens mask, the Micro Lens structure is formed through the following specific methods: a layer of photoresist (AZ, PMMA, or SU-8 type photoresist with a thickness of 1~10 μm) is coated on the surface of the SiOx layer film; ultraviolet exposure is performed using a circular array mask; development is performed to form a cylindrical photoresist structure; thermal reflow is performed to form a spherical crown structure, specifically by baking at a temperature of 120~180℃, using surface tension to melt the cylindrical photoresist into a smooth spherical crown shape (i.e., photoresist microlens); etching is transferred to the SiO2 layer, and the outline of the spherical crown photoresist is transferred to the underlying SiO2 layer through a dry etching (ICP / RIE) process to form the Micro Lens structure.

[0214] In the description of this specification, references to terms such as "some embodiments," "other embodiments," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.

[0215] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0216] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these modifications and improvements all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A light emitting device, characterized by, include: The light-emitting layer structure includes: A pixel stack structure, wherein the cross-sectional shape of the pixel stack structure is trapezoidal, and the lower base of the trapezoid serves as the light-emitting side of the pixel stack structure, and the upper base of the trapezoid serves as the driving side of the pixel stack structure; A reflective cup structure is disposed around the sidewall and driving side of the pixel stack structure, and is spaced apart from the pixel stack structure.

2. The light emitting device of claim 1, wherein The pixel stacked structure includes a first electrode layer, a first conductivity type semiconductor layer and an active layer stacked sequentially along a first direction, wherein the first direction is the direction from the driving side of the pixel stacked structure to the light-emitting side. The light-emitting layer structure further includes: A second conductivity type semiconductor layer is disposed on the side of the active layer away from the first conductivity type semiconductor layer; The second electrode layer is disposed on the side of the second conductivity type semiconductor layer away from the active layer; A lens layer is disposed on the side of the second electrode layer away from the semiconductor layer of the second conductivity type; The orthographic projection of the second conductivity type semiconductor layer, the second electrode layer, and the lens layer along the second direction covers the orthographic projection of the pixel stack structure and the reflector cup structure along the second direction, where the second direction is the direction from the light-emitting side of the pixel stack structure to the driving side.

3. The light emitting device of claim 2, wherein, One end of the reflector cup structure near the light-emitting side of the pixel stack structure is electrically connected to the second type of conductive semiconductor layer.

4. The light-emitting device according to claim 2, characterized in that, The first electrode layer includes a first metal conductive layer and a first transparent conductive layer stacked sequentially along the first direction, and the reflective cup structure is provided with a through hole near the driving side of the pixel stack structure; The light-emitting layer structure further includes: The first pad is disposed on the side of the reflective cup structure away from the pixel stack structure, and the first pad is electrically connected to the first metal conductive layer through the through hole.

5. The light-emitting device according to claim 2, characterized in that, The first electrode layer includes a first transparent conductive layer, and the reflective cup structure has a through hole at a position near the driving side of the pixel stack structure; The light-emitting layer structure further includes: A first metal conductive layer extends from the side of the reflective cup structure away from the driving side of the pixel stack structure through the through hole to the inside of the reflective cup structure and is electrically connected to the first transparent conductive layer. The first pad is disposed on the side of the first metal conductive layer away from the reflective cup structure and is electrically connected to the first metal conductive layer.

6. The light-emitting device according to claim 4 or 5, characterized in that, The light-emitting device further includes: The driving layer structure includes a driving circuit and a second pad, the second pad being electrically connected to the driving circuit; wherein the driving layer structure and the light-emitting layer structure are bonded together after contacting the first pad via the second pad.

7. The light-emitting device according to claim 6, characterized in that, The driving layer structure includes a plurality of second pads, all of which are electrically connected to the driving circuit. The number of light-emitting layer structures is multiple, and each of the multiple light-emitting layer structures is bonded to the driving layer structure. The first pad of each light-emitting layer structure is respectively set to correspond one-to-one with a different second pad.

8. A method for fabricating a light-emitting device, characterized in that, The method includes: A temporary substrate is provided on which an epitaxial stack is formed; The epitaxial stack is patterned to form a pixel stack structure with a trapezoidal cross-sectional shape. The side closer to the temporary substrate is the lower base of the trapezoid, which serves as the light-emitting side of the pixel stack structure, and the side farther from the temporary substrate is the upper base of the trapezoid, which serves as the driving side of the pixel stack structure. A reflective cup structure is formed on the pixel stack structure. The reflective cup structure is disposed around the sidewall and driving side of the pixel stack structure and is spaced apart from the pixel stack structure.

9. The method for preparing a light-emitting device according to claim 8, characterized in that, The epitaxial stack includes a first electrode material layer, a first conductivity type semiconductor material layer, an active material layer and a second conductivity type semiconductor layer stacked sequentially along a first direction, wherein the first direction is the direction along the thickness direction of the epitaxial stack pointing towards the temporary substrate; The step of patterning the epitaxial stack to form a pixel stack structure with a trapezoidal cross-sectional shape includes: The first electrode material layer, the first conductivity type semiconductor material layer, and the active material layer in the epitaxial stack are patterned to obtain a pixel stack structure including a first electrode layer, a first conductivity type semiconductor layer, and an active layer stacked sequentially along the first direction.

10. The method for preparing a light-emitting device according to claim 9, characterized in that, Before forming the reflective cup structure on the pixel stack structure, the method further includes: A first passivation layer is formed on the pixel stack structure, the first passivation layer covering the sidewalls and driving side of the pixel stack structure; the reflective cup structure is formed on the surface of the first passivation layer away from the pixel stack structure.

11. The method for fabricating a light-emitting device according to claim 10, characterized in that, After forming the first passivation layer on the pixel stack structure and before forming the reflective cup structure on the pixel stack structure, the method further includes: The first passivation layer and the second conductive semiconductor material layer are etched to form connection grooves on opposite sides of the pixel stack structure. The connection grooves penetrate the first passivation layer along the first direction and extend into the second conductive semiconductor material layer. The reflective cup structure also extends into the connecting groove.

12. The method for preparing a light-emitting device according to claim 10, characterized in that, The first electrode layer includes a first metal conductive layer and a first transparent conductive layer stacked sequentially along the first direction. After forming the reflective cup structure on the pixel stack structure, the method further includes: A via is formed on the driving side of the reflective cup structure near the pixel stack structure, and the via exposes the first passivation layer; A filling medium layer is formed, which fills the through-hole and covers the reflective cup structure; A first pad is formed within the filling dielectric layer, and the first pad is electrically connected to the first metal conductive layer via the through-hole.

13. The method for preparing a light-emitting device according to claim 10, characterized in that, The first electrode layer includes a first transparent conductive layer; after forming the reflective cup structure on the pixel stack structure, it further includes: A through-hole is formed on the driving side of the reflective cup structure near the pixel stack structure. The through-hole penetrates the reflective cup structure and the first passivation layer along the first direction and exposes the first transparent conductive layer. A second passivation layer is formed, which covers the exposed first transparent conductive layer and the surface of the reflective cup structure away from the first passivation layer; A via is formed, which is located at the position of the through hole, penetrates the second passivation layer along the first direction, and exposes the first transparent conductive layer, and the width of the via is smaller than the width of the through hole; A first metal conductive layer is formed, which extends from the surface of the second passivation layer away from the driving side of the pixel stack structure through the via to the inside of the reflective cup structure and is electrically connected to the first transparent conductive layer. A filling dielectric layer is formed, wherein the filling dielectric layer fills the first metal conductive layer and covers the second passivation layer; A first pad is formed within the filling dielectric layer, and the first pad is electrically connected to the first metal conductive layer.

14. The method for fabricating a light-emitting device according to claim 12 or 13, characterized in that, After the first pad is formed, the process also includes: A driving layer structure is provided, the driving layer structure including a driving circuit and a second pad, the second pad being electrically connected to the driving circuit; Bond the first pad to the second pad accordingly; Strip the temporary substrate; A second electrode layer and a lens layer are sequentially formed on the side of the second conductivity type semiconductor material layer away from the active layer.

15. A display panel, characterized in that, It includes the light-emitting device as described in any one of claims 1 to 7, or the light-emitting device prepared by the preparation method as described in any one of claims 8 to 14.

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