Solar cell module

Abstract

This application provides a solar cell module, comprising at least one sub-cell. The sub-cell includes a transparent insulating substrate, a transparent conductive layer, a first transport layer, a light-absorbing layer, and a second transport layer. The transparent conductive layer is disposed on the transparent insulating substrate and includes electrically isolated electron transport regions and hole transport regions. The first transport layer includes electrically isolated first electron transport layers and first hole transport layers, with the first electron transport layer disposed on the electron transport region and the first hole transport layer disposed on the hole transport region. The light-absorbing layer is disposed on the first electron transport layer and the first hole transport layer. The second transport layer is disposed on the light-absorbing layer and includes at least one of a second electron transport layer and a second hole transport layer. By depositing the second electron transport layer and / or the second hole transport layer above the light-absorbing layer, the overall carrier extraction efficiency and photoelectric conversion performance of the solar cell module are improved.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and in particular to a solar cell module. Background Technology

[0002] Currently, perovskite solar cells have attracted much attention due to their high photoelectric conversion efficiency and low manufacturing cost. In the design of perovskite solar cell modules, the back-contact structure is an important technical approach. However, in the field of back-contact perovskite solar cells, since both the electron transport layer and hole transport layer are located on the same side of the light-absorbing layer (e.g., the bottom), some charge carriers generated within the light-absorbing layer need to travel a relatively long lateral distance before being collected by the corresponding transport layer. This longer lateral transport distance increases the recombination probability of charge carriers during transport, thereby reducing the carrier extraction efficiency of the electron and hole transport layers, and ultimately limiting the overall photoelectric conversion performance of the cell module. Therefore, how to shorten the carrier transport distance and improve the carrier extraction efficiency has become a pressing technical problem to be solved in the current solar cell field. Summary of the Invention

[0003] This application provides a solar cell module, which aims to set a second transmission layer above the light-absorbing layer, so that the charge carriers generated in the light-absorbing layer can be directly transmitted vertically, thereby shortening the transmission distance and improving the charge carrier extraction efficiency.

[0004] This application provides a solar cell module, including at least one sub-cell, the sub-cell comprising: Transparent insulating substrate; A transparent conductive layer is disposed on a transparent insulating substrate, and the transparent conductive layer includes electrically isolated electron transport regions and hole transport regions; The first transport layer includes an electrically isolated first electron transport layer and a first hole transport layer, wherein the first electron transport layer is disposed on the electron transport region and the first hole transport layer is disposed on the hole transport region. A light-absorbing layer is disposed on the first electron transport layer and the first hole transport layer; and, The second transport layer is disposed on the light-absorbing layer, and the second transport layer includes at least one of the second electron transport layer and the second hole transport layer.

[0005] In some embodiments, the second transport layer includes both a second electron transport layer and a second hole transport layer. The position of the second electron transport layer corresponds to the position of the first hole transport layer along the thickness direction of the solar cell module, and the position of the second hole transport layer corresponds to the position of the first electron transport layer along the thickness direction of the solar cell module.

[0006] In some implementations, the second electron transport layer is connected to the cathode busbar of the solar cell module via a conductive connector; Alternatively, the second electron transport layer is connected to the electron transport region of the transparent conductive layer via a conductive connector; Alternatively, in the width direction of the solar cell module, the width of the first transport layer and the width of the light-absorbing layer are both smaller than the width of the transparent conductive layer, so that a deposition area is reserved on the transparent conductive layer, and the second electron transport layer is connected to the deposition area.

[0007] In some implementations, the second hole transport layer is connected to the anode busbar of the solar cell module via a conductive connector; Alternatively, the second hole transport layer is connected to the hole transport region of the transparent conductive layer via a conductive connector; Alternatively, in the width direction of the solar cell module, the width of the first transport layer and the width of the light-absorbing layer are both smaller than the width of the transparent conductive layer, so that a deposition area is reserved on the transparent conductive layer, and the second hole transport layer is connected to the deposition area.

[0008] In some implementations, the second transport layer includes only the second electronic transport layer; The second electron transport layer is connected to the cathode busbar of the solar cell module via a conductive connector; Alternatively, the second electron transport layer is connected to the electron transport region of the solar cell module via a conductive connector; Alternatively, in the width direction of the solar cell module, the width of the first transport layer and the width of the light-absorbing layer are both smaller than the width of the transparent conductive layer, so as to reserve a deposition area on the transparent conductive layer for connection with the second electron transport layer; Alternatively, when the sub-cell containing the second electron transport layer is closest to the cathode busbar, the second electron transport layer protrudes from the light-absorbing layer and the first transport layer on the side facing the cathode busbar and directly contacts the electron transport region of the transparent conductive layer.

[0009] In some implementations, the second transport layer includes only the second hole transport layer; The second hole transport layer is connected to the anode busbar of the solar cell module via a conductive connector; Alternatively, the second hole transport layer is connected to the hole transport region of the solar cell module via a conductive connector; Alternatively, in the width direction of the solar cell module, the width of the first transport layer and the width of the light-absorbing layer are both smaller than the width of the transparent conductive layer, so as to reserve a deposition area on the transparent conductive layer for connection with the second hole transport layer. Alternatively, when the sub-cell containing the second hole transport layer is closest to the anode busbar, the second hole transport layer protrudes from the light-absorbing layer and the first transport layer on the side facing the anode busbar and directly contacts the hole transport region of the transparent conductive layer.

[0010] In some implementations, the second transport layer includes only the second electron transport layer, and the width of the first electron transport layer is smaller than the width of the first hole transport layer in the length direction of the solar cell module. Alternatively, the second transport layer may consist only of a second hole transport layer, and the width of the first electron transport layer may be greater than the width of the first hole transport layer along the length of the solar cell module.

[0011] In some embodiments, there are multiple sub-cells, and each sub-cell has only a second electron transport layer or only a second hole transport layer on its light-absorbing layer. The number of sub-cells with a second electron transport layer is less than or equal to the number of sub-cells with a second hole transport layer.

[0012] In some embodiments, there are multiple sub-cells, and each sub-cell has only a second electron transport layer or only a second hole transport layer on its light-absorbing layer. The solar cell module also includes a cathode busbar and an anode busbar, which are respectively disposed on both sides of the length direction of the solar cell module; When multiple sub-cells are connected in series, the sub-cell with the second electron transport layer is farther away from the cathode busbar than the sub-cell with the second hole transport layer; the sub-cell with the second hole transport layer is closer to the anode busbar than the sub-cell with the second electron transport layer. When multiple sub-cells are connected in parallel, the sub-cell with the second electron transport layer is closer to the cathode busbar than the sub-cell with the second hole transport layer; the sub-cell with the second hole transport layer is closer to the anode busbar than the sub-cell with the second electron transport layer.

[0013] In some embodiments, there are multiple sub-cells connected in series along the length of the solar cell module; the electron transport region and hole transport region within each sub-cell are electrically isolated by a first isolation region, a second isolation region is provided between the electron transport region and hole transport region of two adjacent sub-cells, and the second transport layer, light-absorbing layer and first transport layer between two adjacent sub-cells are electrically isolated by a third isolation region. The first isolation zone, the second isolation zone, and the third isolation zone all extend along the width direction of the solar cell module; The extension lengths of the first and third isolation regions are both equal to the width of the solar cell module; the extension length of the second isolation region is less than the width of the solar cell module, and the second isolation region is located within the projection range of the third isolation region on the transparent insulating substrate, so that two adjacent sub-cells can be connected in series.

[0014] In some embodiments, the first isolation zone contains at least one of air, a light-absorbing layer material, and an insulating material; the second and third isolation zones contain at least one of air and an insulating material.

[0015] In some embodiments, the battery module includes a cathode busbar, an anode busbar, and multiple sub-cells connected in parallel along the length of the battery module; the electron transport region and hole transport region within each sub-cell are electrically isolated by a fourth isolation region, and the second transport layer, light-absorbing layer, first transport layer, and transparent conductive layer between two adjacent sub-cells are electrically isolated by a fifth isolation region; Both the fourth and fifth isolation regions extend along the width of the solar cell module, and the extension length of both the fourth and fifth isolation regions is equal to the width of the solar cell module; multiple electron transport regions are electrically connected to the cathode busbars, and multiple hole transport regions are connected to the anode busbars.

[0016] In some embodiments, the fourth isolation zone contains at least one of air, a light-absorbing layer material, and an insulating material; the fifth isolation zone contains at least one of air and an insulating material.

[0017] The solar cell module provided in this application includes at least one sub-cell. The sub-cell includes a transparent insulating substrate, a transparent conductive layer, a first transport layer, a light-absorbing layer, and a second transport layer. The transparent conductive layer is disposed on the transparent insulating substrate and includes electrically isolated electron transport regions and hole transport regions. The first transport layer includes electrically isolated first electron transport layers and first hole transport layers, with the first electron transport layer disposed on the electron transport region and the first hole transport layer disposed on the hole transport region. The light-absorbing layer is disposed on the first electron transport layer and the first hole transport layer. The second transport layer is disposed on the light-absorbing layer and includes at least one of a second electron transport layer and a second hole transport layer. Thus, when a second electron transport layer is deposited above the light-absorbing layer, electrons generated in regions of the light-absorbing layer that are laterally far from the first electron transport layer can be directly transported vertically to the second electron transport layer. This results in a shorter vertical transport distance and higher electron extraction efficiency. Similarly, when a second hole transport layer is deposited above the light-absorbing layer, holes generated in regions of the light-absorbing layer that are laterally far from the first hole transport layer can be directly transported vertically to the second hole transport layer. This also results in a shorter vertical transport distance and higher hole extraction efficiency. When both a second electron transport layer and a second hole transport layer are deposited on the light-absorbing layer, both of these effects can be achieved simultaneously, thereby improving the overall carrier extraction efficiency and photoelectric conversion performance of the solar cell module. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the structure of a solar cell module provided in an embodiment of this application.

[0020] Figure 2 This is a schematic diagram of the structure of a solar cell module provided in another embodiment of this application.

[0021] Figure 3 This is a schematic diagram of the structure of a solar cell module provided in another embodiment of this application.

[0022] Figure 4 This is a schematic diagram of the structure of a solar cell module provided in another embodiment of this application.

[0023] Figure 5 for Figure 1 A schematic diagram of the structure of a transparent insulating substrate.

[0024] Explanation of icon numbers: 10. Solar cell module; 20. Sub-cell; 100. Transparent insulating substrate; 200. Transparent conductive layer; 210. Electron transport region; 220. Hole transport region; 300. First transport layer; 310. First electron transport layer; 320. First hole transport layer; 400. Light-absorbing layer; 500. Second transport layer; 510. Second electron transport layer; 520. Second hole transport layer; 610. Cathode busbar; 620. Anode busbar; 630. Conductive connector; 710. First isolation region; 720. Second isolation region; 730. Third isolation region; The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0025] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. In addition, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application. In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, specifically the drawing directions in the accompanying drawings; while "inner" and "outer" refer to the outline of the device.

[0026] Please see Figure 1 This embodiment provides a solar cell module 10, which includes at least one sub-cell 20. The sub-cell 20 is the basic unit constituting the solar cell module 10. Multiple sub-cells 20 can be integrated in series or in parallel to obtain the required voltage or current output.

[0027] Specifically, the sub-cell 20 includes a transparent insulating substrate 100. As the supporting carrier for the entire battery module, the transparent insulating substrate 100 needs to have good light transmittance to ensure that light can enter the light-absorbing layer 400 of the sub-cell 20, while also needing insulation to prevent short circuits between adjacent sub-cells 20. The transparent insulating substrate 100 can be a rigid substrate, such as a glass substrate; or a flexible substrate, such as a polyethylene terephthalate (PET) substrate, a polyethylene naphthalate (PEN) substrate, or a polyimide (PI) substrate. Those skilled in the art can flexibly choose the material and thickness of the substrate according to the actual application scenario, such as building-integrated photovoltaics (BIPV) or portable electronic devices.

[0028] A transparent conductive layer 200 is disposed on a transparent insulating substrate 100. The transparent conductive layer 200 serves not only as an electrode for collecting and transporting charge carriers but also as a deposition substrate for subsequent film layers. The material of the transparent conductive layer 200 may include conductive materials with high transmittance (e.g., visible light transmittance greater than or equal to 80%) and low sheet resistance (e.g., less than or equal to 20 Ω / □), such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), or graphene. In this embodiment, the transparent conductive layer 200 includes an electrically isolated electron transport region 210 and a hole transport region 220. Electrical isolation here means that the electron transport region 210 and the hole transport region 220 are electrically blocked to prevent direct recombination of electrons and holes within the transparent conductive layer 200, thereby ensuring that the electron transport region 210 primarily collects electrons and the hole transport region 220 primarily collects holes. This electrical isolation can be achieved by laser etching to form isolation trenches, which can be filled with air, insulating materials (such as silicon dioxide, silicon nitride, polyimide, photoresist, POE film, EVA film, etc.), or the subsequently deposited light-absorbing layer 400 material. It should be understood that electrical isolation does not require absolute insulation resistance; it is sufficient to suppress the lateral leakage current between the electron collection region and the hole collection region to a level that does not affect the normal operation of the sub-cell 20.

[0029] A first transport layer 300 is disposed on the transparent conductive layer 200. The first transport layer 300 includes an electrically isolated first electron transport layer 310 and a first hole transport layer 320. The first electron transport layer 310 is disposed on the electron transport region 210, and the first hole transport layer 320 is disposed on the hole transport region 220. The first electron transport layer 310 is used to selectively transport electrons and block holes, and its material may include tin dioxide (SnO2), zinc oxide, fullerene (C60), or methyl [6,6]-phenyl-C61-butyrate (PCBM), etc. The first hole transport layer 320 is used to selectively transport holes and block electrons, and its material may include nickel oxide, self-assembled monolayer (SAM), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3-hexylthiophene) (P3HT), or poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS), etc. The first electron transport layer 310 and the first hole transport layer 320 are arranged alternately or spaced apart in space, together covering a portion of the transparent conductive layer 200.

[0030] A light-absorbing layer 400 is disposed on the first electron transport layer 310 and the first hole transport layer 320. The light-absorbing layer 400 is the core region for generating photogenerated carriers, and its material is typically a perovskite material, such as an organic-inorganic hybrid perovskite or an all-inorganic perovskite with an ABX3 structure. The A-site can be methylamine (MA), formamidinium (FA), or cesium, the B-site can be lead or tin, and the X-site can be iodine, bromine, or chlorine. The band gap of the light-absorbing layer 400 can be adjusted by the composition, for example, between 1.1 eV and 2.5 eV, to meet different spectral absorption requirements. Besides perovskite materials, the light-absorbing layer 400 can also be other materials capable of generating photogenerated carriers, such as cadmium telluride, copper indium gallium selenide, or crystalline silicon. The light-absorbing layer 400 is typically formed into a continuous thin film by solution methods (such as spin coating or blade coating) or vacuum deposition, covering the first transport layer 300.

[0031] The second transport layer 500 is disposed on the light-absorbing layer 400, and the second transport layer 500 includes at least one of a second electron transport layer 510 and a second hole transport layer 520. In traditional solar cell modules, some charge carriers mainly rely on lateral transport to reach the bottom transport layer. The transport distance is relatively long, and recombination is prone to occur. For example, within the light-absorbing layer 400, holes generated above the first electron transport layer 310 need to undergo a certain amount of lateral transport to reach the first hole transport layer 320. Similarly, electrons generated above the first hole transport layer 320 need to undergo a certain amount of lateral transport to reach the first electron transport layer 310. In this embodiment, by introducing a second transport layer 500 above the light-absorbing layer 400, a vertical transport channel is constructed, such as... Figure 2 As shown, the second transport layer 500 may consist only of the second electron transport layer 510. In this case, electrons generated in the region of the light-absorbing layer 400 that is far from the first electron transport layer 310 can be directly transported longitudinally to the second electron transport layer 510, significantly shortening the electron transport path; as shown Figure 1 As shown, the second transport layer 500 can also consist only of the second hole transport layer 520. In this case, holes generated in areas of the light-absorbing layer 400 that are far from the first hole transport layer 320 can be directly transported longitudinally to the second hole transport layer 520, shortening the hole transport path. Alternatively, the second transport layer 500 can also simultaneously include a second electron transport layer 510 and a second hole transport layer 520. In this case, the light-absorbing layer 400 has transport layers on both its upper and lower sides, which can minimize the longitudinal transport distance of charge carriers. Through this structural design, the technical problems of long lateral transport distance and low extraction efficiency of charge carriers in the solar cell module 10 are effectively solved, significantly improving the photoelectric conversion efficiency of the solar cell module 10.

[0032] In some embodiments, the second transport layer 500 includes a second electron transport layer 510 and a second hole transport layer 520. The position of the second electron transport layer 510 corresponds to the first hole transport layer 320 along the thickness direction of the solar cell module 10, and the position of the second hole transport layer 520 corresponds to the first electron transport layer 310 along the thickness direction of the solar cell module 10.

[0033] Specifically, in the stacked structure of this embodiment, the second electron transport layer 510 above the light-absorbing layer 400 and the first hole transport layer 320 below the light-absorbing layer 400 are spatially aligned vertically or substantially aligned; similarly, the second hole transport layer 520 above the light-absorbing layer 400 and the first electron transport layer 310 below the light-absorbing layer 400 are spatially aligned vertically or substantially aligned. It should be understood that this alignment does not require their projections on the horizontal plane to completely overlap; as long as there is an overlapping area in the thickness direction, forming a longitudinal carrier transport channel, it is sufficient. For example, the projection of the second electron transport layer 510 can completely cover the first hole transport layer 320, or it can partially cover the first hole transport layer 320, as long as effective longitudinal extraction of electrons can be achieved.

[0034] This staggered structure enables the direct vertical transport of most charge carriers within the light-absorbing layer 400, maximizing extraction efficiency. Within the light-absorbing layer 400, photogenerated electrons and holes are generated in pairs. For the region of the light-absorbing layer 400 directly above the first hole transport layer 320, holes generated in this region only need to travel a very short distance downwards to be collected by the first hole transport layer 320, while electrons generated in this region do not need to migrate laterally to the distant first electron transport layer 310, but instead are directly transported upwards to the second electron transport layer 510 directly above. Similarly, for the region of the light-absorbing layer 400 directly above the first electron transport layer 310, electrons are transported downwards to the first electron transport layer 310, and holes are transported upwards to the second hole transport layer 520. Through this design, charge carriers at most locations within the light-absorbing layer 400 only need to undergo vertical transport, significantly shortening the transport path.

[0035] In this embodiment, because the second electron transport layer 510 and the second hole transport layer 520 coexist and are arranged alternately, the transport path of both electrons and holes generated at any location in the light-absorbing layer 400 is restricted to the longitudinal direction. This all-longitudinal transport mode completely eliminates the long-distance lateral migration of charge carriers within the light-absorbing layer 400, thereby minimizing the recombination probability of charge carriers during transport and significantly improving the fill factor and photoelectric conversion efficiency.

[0036] Furthermore, the structure of this embodiment is also beneficial for optimizing the electric field distribution within the light-absorbing layer 400. Since the second electron transport layer 510 and the first hole transport layer 320 are longitudinally aligned, a vertical electric field is formed between them. This electric field can drive electrons and holes to move in opposite directions, further accelerating the separation and extraction of charge carriers. This effectively solves the problem of charge carrier recombination caused by material defects and improves the stability of the device.

[0037] In some embodiments, the second electron transport layer 510 can be connected to the cathode busbar 610 of the solar cell module 10 via a conductive connector 630, or to the electron transport region 210 of the transparent conductive layer 200 via a conductive connector 630. Similarly, the second hole transport layer 520 can be connected to the anode busbar 620 of the solar cell module 10 via a conductive connector 630, or to the hole transport region 220 of the transparent conductive layer 200 via a conductive connector 630. Here, the conductive connector 630 refers to a connection medium with good conductivity, and its function is to transport the charge carriers collected by the second transport layer 500 to the external circuit or the bottom transparent conductive layer 200. The specific material of the conductive connector 630 can be selected according to actual process requirements. For example, it can be metal wire (such as copper wire, silver wire), metal foil strip, conductive silver paste, carbon paste, or other pastes with high conductivity. In practice, conductive silver paste can be applied between the second transmission layer 500 and the busbar or transparent conductive layer 200 using a dispensing process, or the metal wires can be connected by welding or mechanical pressing. The advantage of this connection method is its high flexibility, making it suitable for various complex module layouts. Especially when the second transmission layer 500 and the bottom transparent conductive layer 200 do not have a direct spatial overlap, the conductive connector 630 can act as a bridging bridge.

[0038] Please see Figures 1 to 4As another preferred embodiment, the second electron transport layer 510 or the second hole transport layer 520 can also be connected through a pre-reserved deposition area on the transparent conductive layer 200. In the width direction of the solar cell module 10, the width of the first transport layer 300 and the width of the light-absorbing layer 400 are both smaller than the width of the transparent conductive layer 200, thereby exposing a portion of the uncovered surface at the edge or in a specific area of ​​the transparent conductive layer 200, forming a deposition area for connection with the second electron transport layer 510 or the second hole transport layer 520. The core of this structural design lies in utilizing the self-alignment or masking characteristics of the thin film deposition process. During the fabrication process, the opening size of the mask can be designed so that the film-forming area when depositing the first transport layer 300 and the light-absorbing layer 400 is smaller than the area of ​​the transparent conductive layer 200, thereby reserving a stepped exposed area on the transparent conductive layer 200. Subsequently, during the deposition of the second transport layer 500, the material of the second transport layer 500 extends along the sidewall of the light-absorbing layer 400 and is directly deposited on the exposed area, thereby achieving direct physical contact and electrical connection between the second transport layer 500 and the transparent conductive layer 200.

[0039] This pre-deposited area connection method has significant technical advantages. First, it avoids the use of additional conductive connectors 630, such as conductive adhesive or metal wires, thereby eliminating the additional contact resistance caused by the introduction of heterogeneous material interfaces and reducing losses during carrier transport. Second, this process is fully compatible with existing thin-film deposition processes, requiring no additional dispensing or welding steps, greatly simplifying the production process and reducing manufacturing costs. Furthermore, the connection interface formed by this in-situ deposition has stronger adhesion, making it less prone to connection failures due to adhesive aging or weld detachment, thus improving the long-term operational stability of the module. Specifically, the second transport layer 500 can be a structure extending along the sidewall. The second transport layer 500 can also directly cross the edge of the light-absorbing layer 400 and connect to the pre-deposited area, as long as an effective conductive path can be formed. Thus, this embodiment achieves efficient and low-cost connection between the second transport layer 500 and the external circuit, further improving the carrier collection network of the back-contact solar cell module 10.

[0040] In some embodiments, when the second transport layer 500 includes only the second electron transport layer 510, its connection method has various implementation forms. As a common connection method, the second electron transport layer 510 can be connected to the cathode busbar 610 of the solar cell module 10 through a conductive connector 630, or to the electron transport region 210 of the transparent conductive layer 200 through a conductive connector 630. Both methods utilize external or internal conductive channels to achieve carrier extraction, offering high process flexibility. As another preferred embodiment, in the width direction of the solar cell module 10, the width of the first transport layer 300 and the width of the light-absorbing layer 400 are both smaller than the width of the transparent conductive layer 200, thereby reserving a deposition area on the transparent conductive layer 200 for connection with the second electron transport layer 510. This design allows the second electron transport layer 510 to directly extend to this reserved area during the deposition process, achieving ohmic contact with the transparent conductive layer 200, eliminating the need for additional connection steps.

[0041] In some embodiments, the second electron transport layer 510 of the sub-cell 20 closest to the cathode busbar 610 protrudes beyond the light-absorbing layer 400 and the first transport layer 300 on the side facing the cathode busbar 610, and directly contacts the electron transport region 210 of the transparent conductive layer 200. Here, "protruding" means that, on the horizontal projection plane, the edge of the second electron transport layer 510 extends beyond the edges of the lower light-absorbing layer 400 and the first transport layer 300, forming a cantilevered or stepped extension. This extension extends downwards or directly covers the exposed surface of the transparent conductive layer 200, thereby establishing a low-resistance carrier transport channel.

[0042] In this embodiment, the sub-cell 20 closest to the busbar typically undertakes the task of collecting the current of the entire module, or is located at a critical node of current convergence, and its edge region often has a higher current density. By setting a protruding structure, the contact area between the second electron transport layer 510 and the transparent conductive layer 200 is significantly increased. According to the resistance formula R=ρL / S (where ρ is resistivity, L is the transmission distance, and S is the contact area), the increase in contact area directly reduces the contact resistance, thereby reducing the loss of charge carriers during edge transport. Secondly, the protruding structure allows the second electron transport layer 510 to directly "grab" the bottom transparent conductive layer 200, shortening the path of charge carriers from the edge of the light-absorbing layer 400 to the transparent conductive layer 200, and avoiding the accumulation or recombination of charge carriers at the edge of the light-absorbing layer 400.

[0043] Similarly, when the second transport layer 500 only includes the second hole transport layer 520, its connection method is symmetrically similar to that of the second electron transport layer 510 described above. The second hole transport layer 520 can be connected to the anode busbar 620 of the solar cell module 10 via the conductive connector 630, or to the hole transport region 220 of the transparent conductive layer 200 via the conductive connector 630. Likewise, the connection can also be achieved by reserving a deposition area on the transparent conductive layer 200. Specifically, for the sub-cell 20 closest to the anode busbar 620, its second hole transport layer 520 protrudes from the light-absorbing layer 400 and the first transport layer 300 on the side facing the anode busbar 620, and directly contacts the hole transport region 220 of the transparent conductive layer 200. This structure can also increase the contact area, reduce the edge contact resistance, and improve the hole collection efficiency of the end sub-cell 20.

[0044] Furthermore, the shape of the protruding structure is not limited to a rectangular extension; it can also be a trapezoid, triangle, or other geometric shape that can increase the contact area, as long as it can achieve effective electrical contact with the transparent conductive layer 200. Through this special structural design for the end cell 20, this embodiment further improves the carrier collection network of the solar cell module 10, ensuring the uniformity and high efficiency of the overall performance of the solar cell module 10.

[0045] In some embodiments, when the second transport layer 500 includes only the second electron transport layer 510, the width of the first electron transport layer 310 is smaller than the width of the first hole transport layer 320 in the length direction of the solar cell module 10; or, when the second transport layer 500 includes only the second hole transport layer 520, the width of the first electron transport layer 310 is larger than the width of the first hole transport layer 320 in the length direction of the solar cell module 10.

[0046] This optimized width ratio is not an arbitrary dimensional adjustment, but rather based on a profound mechanism of differences in carrier mobility. In common light-absorbing materials such as perovskites, electron mobility is typically significantly higher than hole mobility. This means that under the same electric field, electrons move faster and can travel greater distances without recombination; in contrast, holes move slower and are more likely to recombine or be trapped by defects during transport.

[0047] When the second transport layer 500 only includes the second electron transport layer 510, electrons generated within the light-absorbing layer 400 can be collected through the top second electron transport layer 510. This effectively adds a fast channel for electrons, greatly alleviating the collection pressure on the bottom first electron transport layer 310. At this point, electron collection is no longer a bottleneck. However, holes can only be collected by the bottom first hole transport layer 320, and due to their low mobility, their lateral transport distance is limited. To ensure effective hole collection, the lateral transport distance needs to be shortened. By setting the width of the first hole transport layer 320 to be greater than the width of the first electron transport layer 310, the coverage area of ​​the hole transport layer can be increased, shortening the lateral distance from any point within the light-absorbing layer 400 to the first hole transport layer 320. This compensates for the low hole mobility and avoids carrier accumulation and recombination caused by untimely hole extraction.

[0048] Conversely, when the second transport layer 500 only includes the second hole transport layer 520, the top second hole transport layer 520 shares the task of collecting holes, ensuring the hole extraction efficiency. In this case, electrons can only be collected by the bottom first electron transport layer 310. Although the electron mobility is high, if the width of the first electron transport layer 310 is too narrow, electrons generated in the light-absorbing layer 400 far from the first electron transport layer 310 still need to travel a long distance laterally, which may cause some electrons to recombine before reaching the transport layer. Therefore, by setting the width of the first electron transport layer 310 to be greater than the width of the first hole transport layer 320, the high electron mobility can be fully utilized, maximizing the use of limited space resources while ensuring effective electron collection, thus achieving a balance between electron and hole extraction efficiency.

[0049] As a specific implementation, the width ratio of the first electron transport layer 310 to the first hole transport layer 320 can be adjusted according to the specific material properties of the light-absorbing layer 400. For example, when the light-absorbing layer 400 uses a perovskite material with an electron mobility much higher than a hole mobility, and the second transport layer 500 contains only the second electron transport layer 510, the width ratio of the first electron transport layer 310 to the first hole transport layer 320 can be set between 1:1.2 and 1:2. This asymmetric width design can effectively balance the collection current of electrons and holes, avoiding the limitation of one type of carrier extraction becoming a bottleneck restricting battery performance, thereby improving the fill factor and overall photoelectric conversion efficiency. It should be understood that the above width ratio is only an example, and in actual design, it can be fine-tuned in combination with factors such as light intensity and the thickness of the light-absorbing layer 400 to achieve the best carrier balance collection effect.

[0050] In some embodiments, there are multiple sub-cells 20, and each sub-cell 20 has only one type of second electron transport layer 510 or only one type of second hole transport layer 520 on its light-absorbing layer 400. It should be understood that "only one type" here means that the light-absorbing layer 400 of a single sub-cell 20 is covered with only one type of second transport layer 500, not that the entire module contains only one type. At the module level, the number of sub-cells 20 with the second electron transport layer 510 is denoted as X1, and the number of sub-cells 20 with the second hole transport layer 520 is denoted as X2, satisfying the relationship X1 ≤ X2.

[0051] This ratio is not arbitrary but based on a profound consideration of the difference in carrier mobility. In common light-absorbing material systems such as perovskites, electron mobility is typically significantly higher than hole mobility. This means that under the same electric field, electrons move faster and can travel farther without recombination; in contrast, holes move slower and are more likely to recombine or be trapped by defects during transport. Therefore, in the design of the solar cell module 10, to balance the extraction efficiency of electrons and holes, more transport channels or a larger collection area are needed for holes. By setting the number of sub-cells 20 in the second hole transport layer 520 to be greater than or equal to the number in the second electron transport layer 510, the number of hole collection nodes can be increased, the average transmission distance of holes can be shortened, thereby compensating for the disadvantage of low hole mobility, avoiding carrier accumulation and recombination caused by untimely hole extraction, achieving a balance between electron and hole collection currents, and improving the overall fill factor and photoelectric conversion efficiency of the module.

[0052] Furthermore, this embodiment optimizes the specific layout of the sub-cells 20. The solar cell module 10 also includes a cathode busbar 610 and an anode busbar 620, which are respectively disposed on both sides of the length direction of the solar cell module 10. Depending on the connection method between the sub-cells 20, it is divided into a series layout strategy and a parallel layout strategy.

[0053] When multiple sub-cells 20 are connected in series, the sub-cell 20 with the second electron transport layer 510 is farther from the cathode busbar 610 than the sub-cell 20 with the second hole transport layer 520; the sub-cell 20 with the second hole transport layer 520 is closer to the anode busbar 620 than the sub-cell 20 with the second electron transport layer 510, thereby helping to reduce series resistance and ohmic losses. In the series module, the current needs to flow through each sub-cell 20 sequentially, resulting in a relatively long current path. Due to the high electron mobility, the electron transport loss within the transport layer is relatively small; while the hole mobility is low, the hole transport loss within the transport layer is relatively large. By arranging the sub-cell 20 with the second electron transport layer 510 away from the cathode busbar 610, the high efficiency of electron transport is utilized, allowing electrons to undertake a longer transport path. Conversely, arranging the sub-cell 20 with the second hole transport layer 520 closer to the anode busbar 620 shortens the hole transport path and reduces hole losses during transport. This layout strategy of transporting electrons further and holes closer significantly reduces the series resistance of the module, improves the collection efficiency of electrons and holes, and simultaneously enhances the total current, fill factor, and conversion efficiency of the entire series module.

[0054] When multiple sub-cells 20 are connected in parallel, the sub-cell 20 with the second electron transport layer 510 is closer to the cathode busbar 610 than the sub-cell 20 with the second hole transport layer 520; similarly, the sub-cell 20 with the second hole transport layer 520 is closer to the anode busbar 620 than the sub-cell 20 with the second electron transport layer 510. The core of this layout strategy is to alleviate current congestion. In parallel modules, sub-cells 20 closer to the busbar typically bear a higher current density, making them prone to current congestion, leading to localized heating and increased resistance loss. By placing the sub-cell 20 with the second electron transport layer 510 closer to the cathode busbar 610, the high conductivity of the electron transport layer can be utilized to quickly channel high-density electron flow, avoiding electron congestion; similarly, placing the sub-cell 20 with the second hole transport layer 520 closer to the anode busbar 620 enhances the collection capability of high-density hole flow. This can effectively alleviate current congestion near the busbar, reduce local Joule heating, and improve the stability and efficiency of the solar cell module 10 under high current operating conditions.

[0055] The specific number and arrangement order of the sub-cells 20, as well as the specific positions of the busbars, can be flexibly adjusted according to the voltage and current output requirements of the module. As long as the basic principles of the above layout strategy are met, they fall within the protection scope of this application. Through this module-level layout optimization, this embodiment achieves comprehensive matching from material properties to structural design, further exploring the performance potential of the back-contact solar cell module 10.

[0056] In some embodiments, there are multiple sub-cells 20 connected in series along the length of the solar cell module 10. The electron transport region 210 and hole transport region 220 within each sub-cell 20 are electrically isolated by a first isolation region 710. A second isolation region 720 is provided between the electron transport region 210 and hole transport region 220 of adjacent sub-cells 20. The second transport layer 500, light-absorbing layer 400, and first transport layer 300 between adjacent sub-cells 20 are electrically isolated by a third isolation region 730. The first isolation region 710, the second isolation region 720, and the third isolation region 730 all extend along the width of the solar cell module 10. The extension lengths of the first isolation region 710 and the third isolation region 730 are both equal to the width of the solar cell module 10; the extension length of the second isolation region 720 is less than the width of the solar cell module 10, and the second isolation region 720 is located within the projection range of the third isolation region 730 onto the transparent insulating substrate 100, thus enabling series connection between adjacent sub-cells 20.

[0057] The specific structure and function of the aforementioned isolation region are described in detail. The first isolation region 710 typically corresponds to the P1 laser etching trench in the fabrication process. The P1 laser etching line penetrates the transparent conductive layer 200, dividing the transparent conductive layer 200 into electrically independent electron transport region 210 and hole transport region 220. Since the extension length of the first isolation region 710 is equal to the module width, it achieves complete isolation between the positive and negative electrode regions within the same sub-cell 20, preventing internal short circuits. In actual fabrication, the width of the P1 etching trench is typically controlled between 10 micrometers and 100 micrometers to minimize the dead area. The material filling the first isolation region 710 can be air, the light-absorbing layer 400 material, or an insulating material. When the light-absorbing layer 400 is filled with material, physical separation is achieved. However, due to the conductivity of perovskite material, there may be a slight lateral leakage current. Therefore, in applications that require high open-circuit voltage, it is preferable to fill the first isolation region 710 with insulating material, such as silicon dioxide, silicon nitride, polyimide, photoresist, POE film, or EVA film, to completely block the leakage path.

[0058] The third isolation region 730 typically corresponds to the P2 laser etching groove in the fabrication process. The P2 etching line penetrates the second transmission layer 500, the light-absorbing layer 400, and the first transmission layer 300, serving to separate adjacent sub-cells 20 on the functional film layer. Similarly, the extension length of the third isolation region 730 is equal to the module width, ensuring physical isolation between adjacent sub-cells 20 on the functional layer. The filling material within the third isolation region 730 is typically air or an insulating material to prevent direct contact between the light-absorbing layers 400 of adjacent sub-cells 20, which could cause a short circuit.

[0059] Please see Figure 5 The second isolation region 720 typically corresponds to the P1 laser etching groove in the fabrication process. Unlike the first isolation region 710 and the third isolation region 730, the extension length of the second isolation region 720 is less than the width of the solar cell module 10. This means that the P1 etching line does not completely cut off the transparent conductive layer 200, but retains a portion of the unetched transparent conductive layer 200 at both ends (or one side) of the module. The second isolation region 720 is located within the projection range of the third isolation region 730 on the transparent insulating substrate 100. This structural design ingeniously achieves series conduction between adjacent sub-cells 20: the P1 etching line cuts off the connection of the transparent conductive layer 200 between adjacent sub-cells 20, so that the hole transport region 220 (or electron transport region 210) of the previous sub-cell 20 is disconnected from the electron transport region 210 (or hole transport region 220) of the next sub-cell 20 at the etching groove; however, since the length of the P1 etching line is less than the module width, the transparent conductive layer 200 bridge at both ends is retained. This transparent conductive layer 200 bridge at both ends is not removed in the subsequent P2 etching process (because P2 etches the upper light-absorbing layer 400 and the transport layer, while the lower transparent conductive layer 200 is retained), thereby enabling the transparent conductive area of ​​the previous sub-cell 20 to be electrically connected to the transparent conductive area of ​​the next sub-cell 20 through the reserved bridge. This connection method eliminates the need for additional metal bonding wires or busbars for bridging, greatly simplifying the internal interconnect structure of the module and significantly reducing series resistance and manufacturing costs.

[0060] It should be understood that the filling material within the second isolation region 720 and the third isolation region 730 is equally crucial to the isolation effect. The filling material may include air or insulating material. After encapsulation, these isolation regions are typically filled with encapsulation material (such as EVA or POE) to form a good insulating environment. Through the synergistic design of the first isolation region 710, the second isolation region 720, and the third isolation region 730 described above, this embodiment constructs a series module architecture based on a back-contact structure. This architecture requires only two or three laser etchings to achieve efficient series connection of the sub-cells 20, effectively reducing the dead zone width and improving the effective light-receiving area and photoelectric conversion efficiency of the solar cell module 10.

[0061] In some embodiments, the solar cell module 10 includes a cathode busbar 610, an anode busbar 620, and a plurality of sub-cells 20, which are connected in parallel along the length of the solar cell module 10. The electron transport region 210 and the hole transport region 220 within each sub-cell 20 are electrically isolated by a fourth isolation region, and the second transport layer 500, light-absorbing layer 400, first transport layer 300, and transparent conductive layer 200 between adjacent sub-cells 20 are electrically isolated by a fifth isolation region. Both the fourth and fifth isolation regions extend along the width of the solar cell module 10, and their extension lengths are equal to the width of the solar cell module 10. The plurality of electron transport regions 210 are electrically connected to the cathode busbar 610, and the plurality of hole transport regions 220 are connected to the anode busbar 620.

[0062] The fourth isolation region is functionally similar to the first isolation region 710 (P1) in the above embodiment, used to achieve electrical isolation between the positive and negative electrode regions inside a single sub-cell 20. However, unlike the series structure, in the parallel structure, adjacent sub-cells 20 must achieve completely independent electrical isolation to prevent short circuits between them. Therefore, this embodiment introduces a fifth isolation region. The fifth isolation region structurally penetrates the second transmission layer 500, the light-absorbing layer 400, the first transmission layer 300, and the transparent conductive layer 200. This means that the fifth isolation region not only cuts off the upper functional film layer but also completely cuts off the bottom transparent conductive layer 200. This fully penetrating design is the essential difference between the isolation region design of parallel modules and series modules. In the above embodiment, the second isolation region 720 (P1) did not completely cut off the transparent conductive layer 200 but retained a portion as a bridge for series conduction; while in the parallel structure of this embodiment, the fifth isolation region must completely cut off the transparent conductive layer 200, making each sub-cell 20 an electrically independent island.

[0063] This fully isolated structural design is to accommodate the requirements of parallel connections. In the parallel module, the positive terminals of all sub-cells 20 need to be connected together, and the negative terminals of all sub-cells 20 need to be connected together. Since the transparent conductive layer 200 has been cut off by the fifth isolation region, it is no longer possible to rely on the conductive layer inside the substrate to achieve interconnection of the sub-cells 20. Therefore, external cathode busbars 610 and anode busbars 620 must be introduced. Specifically, the electron transport region 210 of each sub-cell 20 is connected to the cathode busbar 610 by conductive adhesive, welding, or direct contact, while the hole transport region 220 is connected to the anode busbar 620. This connection method allows the current generated by each sub-cell 20 to be independently delivered to the external circuit, the voltage across each sub-cell 20 is the same, and the total current is the sum of the currents of each sub-cell 20. This structure is particularly suitable for applications requiring high current output, such as powering low-voltage, high-current electronic devices.

[0064] Regarding the filling material of the isolation zones, the fourth isolation zone contains at least one of air, the light-absorbing layer 400 material, and an insulating material; the fifth isolation zone contains at least one of air and an insulating material. Specifically, the filling method of the fourth isolation zone is similar to that of the first isolation zone 710. An insulating material can be selected to improve isolation reliability, or the light-absorbing layer 400 material can be naturally filled during deposition. For the fifth isolation zone, since it extends throughout the entire film structure, to prevent water and oxygen from entering the battery through the etching tank, it is preferable to fill the fifth isolation zone with an insulating encapsulation material, such as polyimide, EVA film, or POE film. This not only ensures electrical isolation but also provides encapsulation protection, improving the environmental stability of the module.

[0065] It should be understood that although this embodiment describes the case where the fourth isolation region and the fifth isolation region extend along the width direction of the solar cell module 10 and the length is equal to the width of the module, the shape and orientation of the isolation region can be adjusted according to the appearance design or installation requirements of the module. For example, wavy or zigzag etching lines can be used, as long as complete electrical isolation can be achieved inside the sub-cell 20 and between sub-cells 20.

[0066] This embodiment provides a method for fabricating a back-contact perovskite solar cell module, used to fabricate the solar cell module 10 of any of the above embodiments. The fabrication method includes the following steps: Step S100: A transparent insulating substrate 100 is provided, and a transparent conductive layer 200 is formed on the transparent insulating substrate 100. A first laser etching process is performed on the transparent conductive layer 200 to form a first isolation region 710 and a second isolation region 720. Specifically, ultra-white glass is selected as the transparent insulating substrate 100, and a tin-doped indium oxide (ITO) thin film is magnetron sputtered onto its surface as the transparent conductive layer 200. Subsequently, a picosecond laser with a wavelength of 355 nm is used to etch the ITO layer, with the laser spot diameter controlled between 10 micrometers and 100 micrometers, preferably 30 micrometers. The etching depth must completely penetrate the transparent conductive layer 200, reaching the surface of the transparent insulating substrate 100, thereby forming the first isolation region 710 and the second isolation region 720 extending along the module width direction. The first isolation region 710 divides the transparent conductive layer 200 into an electrically isolated electron transport region 210 and a hole transport region 220. It should be understood that this step corresponds to the P1 etching process described above. After etching is completed, the substrate needs to be cleaned to remove residual debris and ensure the quality of subsequent film deposition.

[0067] In step S200, a first transport layer 300 is deposited on the transparent conductive layer 200. Specifically, a masking process is used to deposit a first hole transport layer 320 on one side of the first isolation region 710 and a first electron transport layer 310 on the other side of the first isolation region 710. As an example, the first hole transport layer 320 is made of nickel oxide and deposited by magnetron sputtering, with a thickness controlled between 20 nm and 50 nm; the first electron transport layer 310 is made of tin dioxide (SnO2) and prepared by atomic layer deposition (ALD) or solution spin coating, with a thickness controlled between 30 nm and 60 nm. During the deposition process, the positional accuracy of the mask must be strictly controlled to ensure that the first electron transport layer 310 accurately covers the electron transport region 210, the first hole transport layer 320 accurately covers the hole transport region 220, and that the two do not overlap above the first isolation region 710, thus achieving electrical isolation. Furthermore, according to the design concept of Embodiment 5, the width ratio of the first electron transport layer 310 to the first hole transport layer 320 can be flexibly controlled by adjusting the opening width of the mask to adapt to light-absorbing materials with different mobility characteristics.

[0068] In step S300, a light-absorbing layer 400 is deposited on the first transport layer 300. The second isolation region 720 can also be filled with the material of the light-absorbing layer 400. Specifically, the perovskite light-absorbing layer 400 is prepared on the surface of the first transport layer 300 using a solution method or vacuum evaporation method. As an example, a methylamine lead iodide (MAPbI3) perovskite film is prepared using a two-step spin-coating method. First, a lead iodide (PbI2) solution is spin-coated, followed by a methylamine iodide (MAI) solution, and then annealed on a hot stage at 100°C for 10 minutes to form a well-crystallized perovskite film. The thickness of the light-absorbing layer 400 is controlled between 300 nm and 600 nm, and the band gap is adjusted between 1.1 eV and 2.5 eV. The light-absorbing layer 400 needs to continuously cover the first electron transport layer 310 and the first hole transport layer 320, and fill into the second isolation region 720 to achieve conduction inside the sub-cell 20. It should be understood that the material of the light-absorbing layer 400 is not limited to perovskite, but can also be other optoelectronic materials such as cadmium telluride and copper indium gallium selenide. Furthermore, the length of the second isolation region 720 must be less than the width of the solar cell module 10, meaning that an unetched transparent conductive layer 200 area is reserved at the edge of the solar cell module 10 as a bridge for subsequent series connections. This step achieves physical isolation of the functional layers between adjacent sub-cells 20 while preserving the conductive pathways of the underlying layer.

[0069] In step S400, a second transport layer 500 is formed on the light-absorbing layer 400, and a second laser etching process is performed to form a second isolation region 720. Specifically, depending on the module design requirements, a second electron transport layer 510 or a second hole transport layer 520, or both, are selectively deposited on the light-absorbing layer 400. If both a second electron transport layer 510 and a second hole transport layer 520 are required, then the second electron transport layer 510 and the second hole transport layer 520 must be deposited on the light-absorbing layer 400 respectively, and their positions must be staggered with the bottom first transport layer 300. The deposition process can be thermal evaporation or solution deposition.

[0070] Subsequently, P2 laser etching is performed. The P2 etching line must be located between the electron transport region 210 and the hole transport region 220 of the adjacent sub-cell 20, and the etching depth must penetrate through the second transport layer 500, the light-absorbing layer 400 and the first transport layer 300, reaching the surface of the transparent conductive layer 200 to form the third isolation region 730.

[0071] In step S500, a second laser etching process is performed to form the third isolation region 730, completing the fabrication of the solar cell module 10. Specifically, the P2 etching line needs to be parallel to the P1 etching line (the etching line corresponding to the second isolation region 720) and located within the projection range of the P2 etching line. The P2 etching needs to penetrate through the second transport layer 500, the light-absorbing layer 400, and the first transport layer 300, with its extension length equal to the width of the module. The purpose of the P2 etching is to completely sever the functional layer connection between adjacent sub-cells 20, preventing short circuits. At this point, a complete solar cell module 10 is formed. Finally, an encapsulation process is performed, laminating an encapsulating film (such as EVA or POE) and a backsheet onto the surface of the solar cell module 10 to protect the internal structure from water and oxygen corrosion. Through the above process flow, the module fabrication can be completed with only two laser etching processes, effectively reducing the dead area and eliminating the need for depositing expensive top metal electrodes, significantly reducing manufacturing costs.

[0072] It should be understood that the specific parameters in the above preparation process (such as laser spot diameter, film thickness, annealing temperature, etc.) are only illustrative examples. Those skilled in the art can make appropriate adjustments based on the actual material properties and equipment conditions. As long as they do not deviate from the concept of this application, they are all within the scope of protection of this application.

[0073] The embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A solar cell module, characterized in that, Includes at least one sub-battery, said sub-battery comprising: Transparent insulating substrate; A transparent conductive layer is disposed on the transparent insulating substrate, and the transparent conductive layer includes electrically isolated electron transport regions and hole transport regions; The first transport layer includes an electrically isolated first electron transport layer and a first hole transport layer, wherein the first electron transport layer is disposed on the electron transport region and the first hole transport layer is disposed on the hole transport region. A light-absorbing layer is disposed on the first electron transport layer and the first hole transport layer; and, A second transport layer is disposed on the light-absorbing layer, and the second transport layer includes at least one of a second electron transport layer and a second hole transport layer.

2. The solar cell module according to claim 1, characterized in that, The second transport layer includes both a second electron transport layer and a second hole transport layer. The position of the second electron transport layer corresponds to the first hole transport layer along the thickness direction of the solar cell module, and the position of the second hole transport layer corresponds to the first electron transport layer along the thickness direction of the solar cell module.

3. The solar cell module according to claim 2, characterized in that, The second electron transport layer is connected to the cathode busbar of the solar cell module via a conductive connector; Alternatively, the second electron transport layer is connected to the electron transport region of the transparent conductive layer via a conductive connector; Alternatively, in the width direction of the solar cell module, the width of the first transmission layer and the width of the light-absorbing layer are both smaller than the width of the transparent conductive layer, so that a deposition area is reserved on the transparent conductive layer, and the second electron transmission layer is connected to the deposition area.

4. The solar cell module according to claim 2, characterized in that, The second hole transport layer is connected to the anode busbar of the solar cell module via a conductive connector; Alternatively, the second hole transport layer is connected to the hole transport region of the transparent conductive layer via a conductive connector; Alternatively, in the width direction of the solar cell module, the width of the first transmission layer and the width of the light-absorbing layer are both smaller than the width of the transparent conductive layer, so that a deposition area is reserved on the transparent conductive layer, and the second hole transport layer is connected to the deposition area.

5. The solar cell module according to claim 1, characterized in that, The second transport layer consists only of the second electron transport layer; The second electron transport layer is connected to the cathode busbar of the solar cell module via a conductive connector; Alternatively, the second electron transport layer is connected to the electron transport region of the solar cell module via a conductive connector; Alternatively, in the width direction of the solar cell module, the width of the first transmission layer and the width of the light-absorbing layer are both smaller than the width of the transparent conductive layer, so that a deposition area is reserved on the transparent conductive layer, and the second electron transmission layer is connected to the deposition area. Alternatively, when the sub-cell containing the second electron transport layer is closest to the cathode busbar, the side of the second electron transport layer facing the cathode busbar protrudes from the light-absorbing layer and the first transport layer, and directly contacts the electron transport region of the transparent conductive layer.

6. The solar cell module according to claim 1, characterized in that, The second transport layer includes only the second hole transport layer; The second hole transport layer is connected to the anode busbar of the solar cell module via a conductive connector; Alternatively, the second hole transport layer is connected to the hole transport region of the solar cell module via a conductive connector; Alternatively, in the width direction of the solar cell module, the width of the first transport layer and the width of the light-absorbing layer are both smaller than the width of the transparent conductive layer, so as to reserve a deposition area on the transparent conductive layer for connection with the second hole transport layer. Alternatively, when the sub-cell containing the second hole transport layer is closest to the anode busbar, the second hole transport layer protrudes from the light-absorbing layer and the first transport layer on the side facing the anode busbar and directly contacts the hole transport region of the transparent conductive layer.

7. The solar cell module according to claim 1, characterized in that, The second transport layer includes only the second electron transport layer, and in the length direction of the solar cell module, the width of the first electron transport layer is smaller than the width of the first hole transport layer. Alternatively, the second transport layer may consist only of a second hole transport layer, and the width of the first electron transport layer is greater than the width of the first hole transport layer along the length of the solar cell module.

8. The solar cell module according to any one of claims 1 to 7, characterized in that, The number of sub-cells is multiple, and each sub-cell has only the second electron transport layer or only the second hole transport layer on its light-absorbing layer; The number of sub-cells having the second electron transport layer is less than or equal to the number of sub-cells having the second hole transport layer.

9. The solar cell module according to any one of claims 1 to 7, characterized in that, The number of sub-cells is multiple, and each sub-cell has only a second electron transport layer or only a second hole transport layer on its light-absorbing layer; The solar cell module further includes a cathode busbar and an anode busbar, which are respectively disposed on both sides of the length direction of the solar cell module; When multiple sub-cells are connected in series, the sub-cell with the second electron transport layer is farther away from the cathode busbar than the sub-cell with the second hole transport layer; the sub-cell with the second hole transport layer is closer to the anode busbar than the sub-cell with the second electron transport layer. When multiple sub-cells are connected in parallel, the sub-cell with the second electron transport layer is closer to the cathode busbar than the sub-cell with the second hole transport layer; the sub-cell with the second hole transport layer is closer to the anode busbar than the sub-cell with the second electron transport layer.

10. The solar cell module according to any one of claims 1 to 7, characterized in that, The number of sub-cells is multiple, and the multiple sub-cells are connected in series along the length of the solar cell module; the electron transport region and the hole transport region in each sub-cell are electrically isolated by a first isolation region, a second isolation region is provided between the electron transport region and the hole transport region of two adjacent sub-cells, and the second transport layer, the light-absorbing layer and the first transport layer between two adjacent sub-cells are electrically isolated by a third isolation region; The first isolation region, the second isolation region, and the third isolation region all extend along the width direction of the solar cell module; Wherein, the extension length of the first isolation region and the extension length of the third isolation region are both equal to the width of the solar cell module; the extension length of the second isolation region is less than the width of the solar cell module, and the second isolation region is located within the projection range of the third isolation region on the transparent insulating substrate, so that two adjacent sub-cells can be connected in series.

11. The solar cell module according to claim 10, characterized in that, The first isolation zone contains at least one of air, a light-absorbing layer material, and an insulating material; the second isolation zone and the third isolation zone contain at least one of air and an insulating material.

12. The solar cell module according to any one of claims 1 to 7, characterized in that, The battery module includes a cathode busbar, an anode busbar, and multiple sub-cells, which are connected in parallel along the length of the battery module. The electron transport region and the hole transport region within each sub-cell are electrically isolated by a fourth isolation region, and the second transport layer, the light-absorbing layer, the first transport layer, and the transparent conductive layer between two adjacent sub-cells are electrically isolated by a fifth isolation region. Both the fourth isolation region and the fifth isolation region extend along the width direction of the solar cell module, and the extension length of both the fourth isolation region and the fifth isolation region is equal to the width of the solar cell module; The plurality of electron transport regions are electrically connected to the cathode busbar, and the plurality of hole transport regions are connected to the anode busbar.

13. The solar cell module according to claim 12, characterized in that, The fourth isolation zone contains at least one of air, a light-absorbing layer material, and an insulating material; the fifth isolation zone contains at least one of air and an insulating material.

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