A semiconductor device and a magneto-electrically enhanced piezoelectric optoelectronic synapse device

Abstract

This invention provides a semiconductor device and a magnetostrictive piezoelectric photosynapse device. Under the combined control of a magnetic field and an optical field, the carrier concentration in the piezoelectric photolayer increases, thereby controlling the conduction of the first and second electrodes. When the magnetic field and optical field are applied, the semiconductor device does not need to contact the devices providing the magnetic field and the optical field, respectively, solving the energy consumption problem caused by continuous or frequent electric field maintenance in existing technologies using electric field control, and reducing the energy consumption of the semiconductor device. Since the magnetic field and optical field have the characteristic of being maintained stably for a long time with low energy consumption, the stability of the control of the semiconductor device can be improved, the reliability of the semiconductor device can be improved, and the reliability degradation problem caused by the accumulation of electrical stress in existing technologies using electric field control can be solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a semiconductor device and a magneto-enhanced piezoelectric photosynaptic device. Background Technology

[0002] Existing semiconductor devices based on piezo-optoelectronics typically employ two physical fields for modulation: electricity and light. To achieve long-term, stable synaptic weight maintenance, they usually rely on continuous or frequent electric field maintenance. This not only leads to additional energy consumption but may also cause device performance drift or reliability degradation due to the accumulation of electrical stress.

[0003] Therefore, a new control dimension is needed to work in conjunction with optical field control in order to reduce device energy consumption and improve device reliability. Summary of the Invention

[0004] This invention provides a semiconductor device and a magnetostrictive piezoelectric photoelectric synapse device. By coordinating magnetic field modulation and optical field modulation, the energy consumption of the semiconductor device is reduced and the reliability of the semiconductor device is improved.

[0005] In a first aspect, embodiments of the present invention provide a semiconductor device, comprising: a magnetostrictive layer, a piezoelectric photoelectric layer, and an electrode layer stacked sequentially, wherein the electrode layer includes a first electrode and a second electrode, the first electrode and the second electrode being spaced apart, and both the first electrode and the second electrode being connected to the piezoelectric photoelectric layer; The magnetostrictive layer deforms under the action of a magnetic field, and the deformation acts on the piezoelectric photoelectric layer. Under the action of the light field and the deformation, the piezoelectric photoelectric layer conducts electricity between the first electrode and the second electrode.

[0006] Secondly, embodiments of the present invention also provide a magneto-enhanced piezoelectric photosynaptic device, including the semiconductor device described in the first aspect above.

[0007] The beneficial effects of this invention are as follows: This invention provides a semiconductor device and a magnetostrictive piezoelectric photosynapse device. Under the combined control of a magnetic field and an optical field, the carrier concentration in the piezoelectric photolayer increases, thereby controlling the conduction of the first and second electrodes. When the magnetic field and optical field are applied, the semiconductor device does not need to contact the devices providing the magnetic field and the optical field, respectively, solving the energy consumption problem caused by continuous or frequent electric field maintenance in existing technologies using electric field control, and reducing the energy consumption of the semiconductor device. Since the magnetic field and optical field have the characteristic of being maintained stably for a long time with low energy consumption, the stability of the control of the semiconductor device can be improved, the reliability of the semiconductor device can be improved, and the reliability degradation problem caused by the accumulation of electrical stress in existing technologies using electric field control can be solved. Attached Figure Description

[0008] Figure 1 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of another semiconductor device provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the electrode arrangement in the electrode layer provided in an embodiment of the present invention; Figure 4 This is a schematic diagram of the magnetostrictive layer and flexible substrate provided in an embodiment of the present invention; Figure 5 This is an optical microscope image of a semiconductor device provided in an embodiment of the present invention; Figure 6 The Raman spectrum of a semiconductor device provided in an embodiment of the present invention; Figure 7 This is a transmission electron microscope (TEM) image of a semiconductor device provided in an embodiment of the present invention; Figure 8 This is a graph showing the relationship between the interval time and the PPF index provided in the embodiments of the present invention; Figure 9 This is a time-current relationship diagram provided in an embodiment of the present invention; Figure 10 This is a graph showing the relationship between the number of iterations and the accuracy provided in an embodiment of the present invention.

[0009] 1-Magnetostrictive layer, 2-Piezoelectric photoelectric layer, 3-Electrode layer, 31-First electrode, 32-Second electrode, 4-Memory adjustment layer, 5-Insulating layer, 6-Third electrode. Detailed Implementation

[0010] The following detailed description, with reference to the accompanying drawings, provides a specific embodiment of a semiconductor device and a magnetostrictive synaptic device according to the present invention. It should be noted that the described embodiments are merely some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0011] This invention provides a semiconductor device, such as Figure 1 As shown, it may include: a magnetostrictive layer 1, a piezoelectric photoelectric layer 2, and an electrode layer 3 stacked sequentially. The electrode layer 3 includes a first electrode 31 and a second electrode 32, which are spaced apart. Both the first electrode 31 and the second electrode 32 are connected to the piezoelectric photoelectric layer 2. The magnetostrictive layer 1 deforms under the action of a magnetic field, and the deformation acts on the piezoelectric photoelectric layer 2. Under the action of the light field and the deformation, the piezoelectric photoelectric layer 2 conducts the first electrode 31 and the second electrode 32.

[0012] Thus, based on the properties of magnetostrictive materials, the deformation of the magnetostrictive layer is controlled by a magnetic field. This deformation can act on the piezoelectric photoelectric layer. Due to the piezoelectric effect, charge carriers, such as positive and negative charges, can be generated in the piezoelectric photoelectric layer under the influence of deformation. Similarly, due to the photoelectric effect, photogenerated charge carriers, such as positive and negative charges, can be generated in the piezoelectric photoelectric layer under the influence of an optical field. Therefore, under the combined control of the magnetic and optical fields, the charge carrier concentration in the piezoelectric photoelectric layer increases, thereby controlling the conduction of the first and second electrodes, achieving the regulation of the conduction effect between the first and second electrodes by the magnetic and optical fields.

[0013] When applying magnetic and optical fields, the semiconductor device does not need to contact the devices providing the magnetic field and optical field, respectively. This solves the energy consumption problem caused by continuous or frequent electric field maintenance in existing technologies using electric field control, thereby reducing the energy consumption of the semiconductor device. Furthermore, since magnetic and optical fields can be maintained stably for extended periods with low energy consumption, using magnetic and optical fields to control semiconductor devices improves the stability and reliability of the control, resolving the reliability degradation problem caused by electrical stress accumulation in existing technologies using electric field control.

[0014] It should be noted that when only an optical field is applied to the semiconductor device without a magnetic field, the photogenerated carriers generated in the piezoelectric photoelectric layer can conduct the first and second electrodes to a certain extent. When only a magnetic field is applied to the semiconductor device without an optical field, the magnetic field controls the deformation of the magnetostrictive layer. The deformation acts on the piezoelectric photoelectric layer, and under the action of the deformation, the carriers generated in the piezoelectric photoelectric layer can conduct the first and second electrodes to a certain extent. When both a magnetic field and an optical field are applied to the semiconductor device, the carrier concentration in the piezoelectric photoelectric layer increases due to the combined effect of the optical and magnetic fields, which significantly reduces the conduction resistance of the piezoelectric photoelectric layer, thereby increasing the conduction effect of the first and second electrodes.

[0015] In some embodiments, the first electrode and the second electrode are arranged in a direction parallel to the magnetic axis extension direction of the magnetostrictive layer.

[0016] Because the direction of the stretching of the magnetostrictive layer is the direction of the magnetic axis extension, and the deformation generated by the magnetostrictive layer in the stretching direction is the greatest, when the arrangement direction of the first electrode and the second electrode is parallel to the magnetic axis extension direction of the magnetostrictive layer, the piezoelectric photoelectric layer is subjected to the greatest deformation in the arrangement direction of the first electrode and the second electrode, resulting in a higher carrier concentration between the first electrode and the second electrode, thus improving the conduction effect of the first electrode and the second electrode.

[0017] Of course, in practice, the arrangement direction of the first and second electrodes can also be any direction other than parallel to the magnetic axis extension direction of the magnetostrictive layer. When the arrangement direction of the first and second electrodes is any direction other than parallel to the magnetic axis extension direction of the magnetostrictive layer, although the deformation effect on the piezoelectric photoelectric layer in the arrangement direction of the first and second electrodes is smaller, and the increase in carrier concentration in the piezoelectric photoelectric layer is lower, it can still solve the energy consumption problem caused by continuous or frequent electric field maintenance when using electric field control in the prior art, as well as the reliability degradation problem caused by the accumulation of electrical stress when using electric field control in the prior art, thereby reducing the energy consumption of semiconductor devices and improving the reliability of semiconductor devices.

[0018] In some embodiments, the magnetostrictive layer is made of at least one of terbium-iron-dysprosium alloy (Terfenol-D) and iron-nickel alloy. Of course, in practice, the magnetostrictive layer can also be made of other materials that undergo stretching deformation under the action of a magnetic field, and this is not limited thereto.

[0019] In some embodiments, the orthogonal projection of the piezoelectric photolayer onto the magnetostrictive layer overlaps with the magnetostrictive layer. For example... Figure 1As shown, when the orthogonal projection of the piezoelectric photoelectric layer 2 onto the magnetostrictive layer 1 overlaps with the magnetostrictive layer, the deformation generated by the magnetostrictive layer can act more directly on the piezoelectric photoelectric layer, increasing the deformation amplitude of the magnetostrictive layer on the piezoelectric photoelectric layer, resulting in a higher carrier concentration generated by deformation in the piezoelectric photoelectric layer, thereby improving the conduction effect of the first electrode and the second electrode, and improving the ability of the magnetic field to control the conduction effect.

[0020] Of course, in practice, the orthographic projection of the piezoelectric photoelectric layer onto the magnetostrictive layer may not overlap with the magnetostrictive layer. When the orthographic projection of the piezoelectric photoelectric layer onto the magnetostrictive layer does not overlap with the magnetostrictive layer, the deformation generated by the magnetostrictive layer can still act on the piezoelectric photoelectric layer. However, the deformation amplitude of the magnetostrictive layer acting on the piezoelectric photoelectric layer will be smaller, but the conduction effect of the first electrode and the second electrode can still be controlled.

[0021] In some embodiments, such as Figure 2 As shown, the semiconductor device further includes: a memory adjustment layer 4, an insulating layer 5, and a third electrode 6 disposed between the magnetostrictive layer 1 and the piezoelectric photoelectric layer 2. The third electrode 6, the insulating layer 5, and the memory adjustment layer 4 are stacked sequentially along the direction from the magnetostrictive layer 1 to the piezoelectric photoelectric layer 2. The memory adjustment layer 4 is used to: reduce the rate of decrease of carrier concentration in the piezoelectric photoelectric layer during the non-operational phase of the light field under the control of the voltage applied by the third electrode 5.

[0022] Since the memory modulation layer can capture charge carriers and slowly release them to the piezoelectric photoelectric layer, it can reduce the rate at which the charge carrier concentration in the piezoelectric photoelectric layer decreases, thus enabling the semiconductor device to have the ability to remember signals.

[0023] When a first voltage, such as but not limited to a positive voltage, is applied to the third electrode, the third electrode can provide charge carriers to the memory adjustment layer, thereby increasing the amount of charge carriers to be released by the memory adjustment layer. This increases the time for the memory adjustment layer to release charge carriers to the piezoelectric photoelectric layer, thus reducing the rate of decrease in the charge carrier concentration in the piezoelectric photoelectric layer. If the time for releasing charge carriers is considered as the memory time, the memory time of the semiconductor device can be extended, thereby enhancing the ability of the semiconductor device to remember signals.

[0024] When a second voltage, such as but not limited to a negative voltage, is applied to the third electrode, the third electrode can absorb the carriers captured by the memory modulation layer, thereby reducing the amount of carriers to be released by the memory modulation layer. This, in turn, accelerates the decrease in carrier concentration in the piezoelectric photoelectric layer, resulting in a reduction in the ability of the semiconductor device to store signals.

[0025] It should be understood that in semiconductor devices, the ability to remember signals macroscopically manifests as follows: under the stimulation of two adjacent first and second optical pulse signals, the current between the first and second electrodes is greater under the stimulation of the second optical pulse signal than under the stimulation of the first optical pulse signal. Specifically, the implementation principle includes: the stimulation of the first optical pulse signal increases the carrier concentration in the piezoelectric photoelectric layer; and due to the presence of the memory modulation layer, the rate of decrease in the carrier concentration in the piezoelectric photoelectric layer is slowed. Therefore, until the stimulation of the second optical pulse signal, the carrier concentration in the piezoelectric photoelectric layer will remain at a relatively high value, such as the first value; when the second optical pulse signal is activated, the carrier concentration in the piezoelectric photoelectric layer will further increase on top of the first value, thus the current between the first and second electrodes will be greater than the current under the stimulation of the first optical pulse signal, improving the signal memory capability of the semiconductor device.

[0026] Thus, the semiconductor device of this application embodiment can perform coordinated processing and correlation of three heterogeneous physical signals: electrical, optical, and magnetic, increasing the control dimensions of the semiconductor device and realizing the control effect of the semiconductor device under multiple control dimensions.

[0027] In some embodiments, the material used to fabricate the memory modulation layer includes at least one of molybdenum distellide and tungsten diselenide. These materials have the property of trapping charge carriers and releasing them slowly, so using these materials to fabricate the memory modulation layer can achieve the function of memorizing signals. Of course, in practice, the material used to fabricate the memory modulation layer can also be other bipolar materials capable of achieving the function of memorizing signals. The bipolar material can be, but is not limited to, two-dimensional or non-two-dimensional materials, and is not limited thereto.

[0028] In some embodiments, the material used to fabricate the third electrode includes at least one of graphene, transition metal carbides, and transition metal sulfides. Of course, in practice, the material used to fabricate the third electrode can also be other materials with good electrical conductivity. These materials can be, but are not limited to, two-dimensional or non-two-dimensional materials, and are not limited thereto.

[0029] In some embodiments, the semiconductor device further includes a flexible substrate disposed between the magnetostrictive layer and the third electrode.

[0030] Thus, when fabricating semiconductor devices, the third electrode, insulating layer, memory adjustment layer, piezoelectric photoelectric layer, and electrode layer can be stacked sequentially on a flexible substrate. Then, the flexible substrate is firmly bonded to the magnetostrictive layer with an adhesive. Since semiconductor devices need to undergo the stretching and deformation of the magnetostrictive layer, the firm bonding between the flexible substrate and the magnetostrictive layer can reliably and accurately apply the deformation generated by the magnetostrictive layer to the piezoelectric photoelectric layer, and ensure the mechanical stability of the semiconductor device during testing and use.

[0031] The flexible substrate material can include a thin layer of mica; in practice, it can also include flexible materials capable of supporting the aforementioned stacked semiconductor device structure. Preferably, the flexible substrate material can be selected to have a high surface flatness, which results in higher integration quality when stacking the third electrode, insulating layer, memory adjustment layer, piezoelectric photoelectric layer, and electrode layer, thereby improving the performance of the semiconductor device.

[0032] In some embodiments, the material used to fabricate the piezoelectric photoelectric layer includes at least one of indium selenide, niobium oxyiodide, and gallium-based chalcogenides. These materials possess piezoelectricity and photoelectric effect, and their use enables the piezoelectric photoelectric layer to function. Of course, in practice, the material used to fabricate the piezoelectric photoelectric layer can also be other chalcogenides or n-type semiconductor materials possessing piezoelectricity and photoelectric effect. These materials can be, but are not limited to, two-dimensional or non-two-dimensional materials, and are not limited herein.

[0033] It should be noted that when there are multiple semiconductor devices, they can be arranged in an array. For semiconductor devices located at different positions in the array, the arrangement of the first and second electrodes can be different or the same, thereby improving design flexibility and meeting the application requirements of different scenarios. Specifically, the arrangement of the first and second electrodes can be as follows: Figure 3 As shown, Figure 3 (a) Figure 3 (b) Figure 3 (c) Figure 3 (d) Figure 3 (e) Figure 3 (f) in Figure 3 (g) is only a partial embodiment of the arrangement of the first and second electrodes. Any arrangement can be selected according to actual needs, and there is no restriction here.

[0034] Furthermore, the semiconductor devices arranged in an array can choose to share the same magnetostrictive layer; or some semiconductor devices can share the same magnetostrictive layer, while other semiconductor devices can correspond to different magnetostrictive layers; or each semiconductor device can correspond to a different magnetostrictive layer, which is not limited here.

[0035] Based on the same inventive concept, this embodiment of the invention also provides a magnetostrictive piezoelectric photosynaptic device. The implementation principle of this piezoelectric photosynaptic device is basically similar to that of the semiconductor device described in the foregoing embodiments. The specific implementation method of this piezoelectric photosynaptic device can be found in the specific embodiments of the foregoing semiconductor device, and the repeated parts will not be described again.

[0036] Specifically, the present invention provides a magnetostrictive piezoelectric photosynaptic device, comprising: a semiconductor device as described in any of the embodiments above.

[0037] Compared to traditional synaptic devices, the magnetostrictive piezoelectric photoelectric synaptic device of this application, by introducing a magnetic field, obtains a third independent input dimension, enabling it to collaboratively process and correlate three heterogeneous physical signals: electricity, light, and magnetism. It can simulate associative memory behavior similar to conditioned reflexes that relies on the combined action of light and magnetic signals.

[0038] When piezoelectric photoelectric synaptic devices are applied to brain-like neuromorphic computing, it marks a significant step from simple dual-field modulation to brain-like multimodal computing capable of handling complex associations and possessing "perception-fusion-decision" capabilities. This enables multimodal collaborative computing and advanced associative learning capabilities. The synergistic effect of magnetic fields and piezoelectric photoelectronics can significantly improve the pairwise pulse facilitation index and amplify the degree of external stimulation's control over the internal state of the piezoelectric photoelectric synaptic device. Specifically, the piezoelectric photoelectric synaptic device exhibits a high coupling enhancement factor.

[0039] At the application level, when used as a synaptic unit in an artificial neural network for feature extraction tasks, its multimodal collaborative processing capability enables the network to distinguish complex features more effectively, thereby increasing recognition efficiency by tens of times and significantly reducing computational costs. Furthermore, the non-contact and low-power characteristics of magnetic field control reduce the continuous dependence on high-energy-consuming electric fields, contributing to lowering the overall energy consumption of the computing system.

[0040] The following is a detailed description with reference to specific examples.

[0041] First, the specific steps for fabricating semiconductor devices include: Step S11): Patterning of the electrode layer: Photoresist is formed on a thermally oxidized silicon substrate, followed by pre-baking, exposure through a mask, post-baking, and development to form the electrode pattern. Plasma cleaning is then performed to remove surface contaminants. Next, a conductive layer of a certain thickness, such as, but not limited to, a gold layer, is deposited using an electron beam evaporation system. The photoresist and excess conductive layer are then removed by acetone stripping to form the first and second electrodes, followed by cleaning with ethanol and isopropanol sequentially. Finally, a polystyrene film is spin-coated as a sacrificial layer for subsequent transfer; however, in practice, the sacrificial layer material can also be other materials suitable for transferring electrode layers, such as polymethyl methacrylate, and is not limited here.

[0042] Step S12), Fabrication of the flexible substrate and the lead-out electrode of the third electrode: Using a flat, thin layer of mica as a flexible substrate, conductive metal materials are sequentially deposited through electron beam evaporation and then patterned using photolithography to form lead-out electrodes for contact and connection with the third electrode.

[0043] Step S13): Layer-by-layer transfer and stacking of synaptic devices: Thin-layer samples of graphene (as the third electrode), hexagonal boron nitride (as the insulating layer), molybdenum ditelluride (as the memory modulation layer), and indium selenide (as the piezoelectric photoelectric layer) were obtained by mechanical exfoliation. Under microscopic manipulation, using polydimethylsiloxane film as the transfer medium, these thin-layer samples were sequentially aligned and stacked onto designated areas of a flexible substrate, with the third electrode and the lead-out electrode in contact, forming a heterojunction structure for the synaptic device.

[0044] Step S14): Electrode layer integration and interface optimization: The electrode layer with the polystyrene film sacrificial layer prepared in step S11 is precisely superimposed with the heterojunction structure prepared in step S13. The integrated sample is placed in a drying oven and left to stand at an appropriate temperature for a certain period of time to enhance interlayer contact and interface coupling. Subsequently, the polystyrene film sacrificial layer is dissolved and removed using N,N-dimethylformamide to release the electrode layer, which is then vacuum dried to remove residual solvent.

[0045] Step S15): Integration of the magnetostrictive layer and completion of the device: The Terfenol-D magnetostrictive material is processed into a magnetostrictive layer of a certain size, see [link to documentation]. Figure 4 As shown, Figure 4 (a) Figure 4 (b) and Figure 4 (c) shows the length, width, and height of the magnetostrictive layer. Figure 4 (d) shows the surface flatness of the flexible substrate made of a thin layer of mica. It is then firmly bonded to the flexible substrate supporting the heterojunction structure using an adhesive to ensure the mechanical stability of the structure during subsequent multiphysics field testing, ultimately yielding the semiconductor device. Optical micrographs of the semiconductor device are shown below. Figure 5 As shown, each structure is clearly visible and has distinct boundaries. The third electrode 6, insulating layer 5, memory adjustment layer 4, piezoelectric photoelectric layer 2, and first electrode 31 and second electrode 32 are all stacked on the magnetostrictive layer 1. It should be understood that... Figure 5 The position indicated by the dashed box n1 is the overlapping position of the piezoelectric photoelectric layer 2 and the memory adjustment layer 4, and the position indicated by the dashed box n2 is the non-overlapping position of the piezoelectric photoelectric layer 2 and the memory adjustment layer 4. The difference in color intensity between the areas indicated by the dashed box n1 and the areas indicated by the dashed box n2 is due to the different number of film layers at different positions during optical microscope imaging.

[0046] Secondly, the following tests are performed after the semiconductor device is fabricated: 1. The integration quality was examined using Raman spectroscopy and scanning electron microscopy. By performing Raman spectroscopy on semiconductor devices, the following results were obtained: Figure 6 The test results shown are as follows: S5 is the Raman spectrum of the semiconductor device provided in the embodiments of this application; S1 is the Raman spectrum of graphene used to fabricate the third electrode; S2 is the Raman spectrum of hexagonal boron nitride used to fabricate the insulating layer; S3 is the Raman spectrum of molybdenum ditelluride used to fabricate the memory modulation layer; and S4 is the Raman spectrum of indium selenide used to fabricate the piezoelectric photoelectric layer. From the test results, the Raman spectrum of the semiconductor device includes the Raman spectra of each component structure, such as the characteristic peaks G and 2D shown in S1, and the characteristic peak E shown in S2. 2g The characteristic peak E shown in S3 2 1g The characteristic peaks A(LO+TO), A(TO), and A(LO) shown in S4 are all clearly visible in S5, indicating that the integration quality of each component structure in the semiconductor device is good.

[0047] By performing transmission scanning electron microscopy (TEM) tests on semiconductor devices, we can obtain results such as... Figure 7 The test results show that the cross-sectional image is clear. The third electrode 6 made of graphene, the insulating layer 5 made of hexagonal boron nitride, the memory adjustment layer 4 made of molybdenum ditelluride, and the piezoelectric photoelectric layer 2 made of indium selenide exhibit a multilayer structure stacked from bottom to top. The interfaces between each layer are flat and the thickness is uniform, indicating that the prepared semiconductor device still maintains a good crystal structure and interface after stacking, which shows that the integration quality of each component structure in the semiconductor device is good.

[0048] 2. Paired Pulse Facilitation (PPF) Index Test: By performing PPF index testing on semiconductor devices, the following results were obtained: Figure 8 The test results shown illustrate the following test procedure: The piezoelectric photoelectric layer was stimulated with a 638nm wavelength laser pulse under conditions of applied and unapplied magnetic fields. The current between the first and second electrodes after the second laser pulse was recorded as the second current, and the current between the first and second electrodes after the first laser pulse was recorded as the first current. The ratio of the second current to the first current was calculated to obtain the PPF index. Figure 8In the diagram, dotted line T1 represents the test results when a magnetic field is applied, and dotted line T2 represents the test results when no magnetic field is applied. When the interval between laser pulse stimulation of the piezoelectric photolayer is 0-1 s, the PPF index increases significantly when a magnetic field is applied compared to the case without a magnetic field, demonstrating the significant effect of the magnetic field on semiconductor devices. Furthermore, as the laser pulse interval increases, the PPF index gradually decreases in both cases. If this gradual decrease in the PPF index can be considered a manifestation of decay kinetics, then this decay kinetics is consistent with the typical changes in short-term plasticity in biological neural synapses.

[0049] 3. Memory and learning ability test: By using multiple light pulses, dynamic training tests are performed on semiconductor devices to obtain results such as... Figure 9 The test results shown indicate that during the first training session (shown in step 1), after applying 23 light pulses, the current increased from 23.5 nA to 343.6 nA, demonstrating "memory formation." After the stimulation stopped, the current decayed to 72.8 nA, exhibiting "forgetting" behavior. During the second training session (shown in step 2), the number of pulses required to reach the same current peak decreased to 14, and during the third training session (shown in step 3), the number of pulses required to reach the same current peak decreased to 7, while the current remained at approximately 70 nA, higher than the initial value of 23.5 nA. This demonstrates that the semiconductor device exhibits significant learning and memory characteristics, and that after completing the first training session, learning efficiency improved and a certain degree of long-term memory retention was achieved.

[0050] 4. Handwritten digit image recognition task test: By testing semiconductor devices for handwritten digit image recognition tasks, the following results were obtained: Figure 10 The test results shown illustrate the testing process, which included performing handwritten digit image recognition on a semiconductor device under three conditions: with only the original image input, preprocessing via an optical field, and preprocessing via both an optical field and a magnetic field. Figure 10In the diagram, line L1 represents the test results with combined light and magnetic field preprocessing, line L2 represents the test results with light field preprocessing, and line L3 represents the test results with only the original image input. The test results show that in line L3, with only the original image input, the recognition accuracy of the semiconductor device converges after 82 iterations. In line L2, with light field preprocessing, the number of iterations required for the semiconductor device to converge its recognition accuracy decreases from 82 to 11, improving training efficiency by approximately 700%. In line L3, with combined light and magnetic field preprocessing, the recognition accuracy further increases from 90.6% to 96.8%, and the number of convergence iterations is significantly reduced from 82 to 2, improving training efficiency by approximately 4100%, while the computational cost is only 2.4% of the original. This indicates that the semiconductor device has strong feature extraction capabilities and can achieve superior recognition performance with extremely low computational cost.

[0051] In summary, the technical solution provided by the embodiments of the present invention has the following advantages: 1. By coordinating the three dimensions of magnetic field, light field and electric field, the piezoelectric photoelectric synaptic device (hereinafter referred to as the device) is significantly enhanced to improve its ability to process and learn from multimodal stimuli, making it closer to the complex function of biological synapses. Furthermore, by utilizing the non-contact and low-power control characteristics of the magnetic field, the dependence on a constant electric field is reduced, thereby improving the long-term working stability of the device while achieving high-performance neuromorphic computing.

[0052] 2. Multimodal collaborative computing and advanced associative learning capabilities have been achieved. By introducing a magnetic field, the device gains a third independent input dimension, enabling it to collaboratively process and correlate three heterogeneous physical signals: electrical, optical, and magnetic. This can simulate associative memory behavior similar to conditioned reflexes, which relies on the combined action of light and magnetic signals. This marks a significant advancement from simple dual-field modulation to brain-like multimodal computing capable of handling complex associations and possessing "perception-fusion-decision" capabilities.

[0053] 3. The synergistic effect of magnetic field and piezoelectric optoelectronic effect can significantly improve the pairwise pulse facilitation index and amplify the degree of external stimulation on the internal state of the device, which is manifested in the device exhibiting a high coupling enhancement factor.

[0054] 4. Improved computational efficiency and recognition accuracy. At the application level, when used as a synaptic unit in an artificial neural network for feature extraction, its multimodal collaborative processing capability enables the network to distinguish complex features more effectively, thereby increasing recognition efficiency by tens of times and significantly reducing computational costs. The non-contact and low-power characteristics of magnetic field control reduce the continuous dependence on high-energy-consuming electric fields, helping to lower the overall energy consumption of the computing system.

[0055] 5. This invention provides a new paradigm for device design and a new perspective for materials research. It is not only a novel device, but also an effective technical path to enhance the functional complexity of neuromorphic devices through integrated multi-physics manipulation. It successfully expands the application scope of piezo-optoelectronics from traditional sensing and energy harvesting to the field of high-performance neuromorphic computing, opening up new research directions for the subsequent development of more advanced multifunctional fusion devices.

[0056] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.

Claims

1. A semiconductor device, characterized by, include: A magnetostrictive layer, a piezoelectric photoelectric layer, and an electrode layer are stacked sequentially. The electrode layer includes a first electrode and a second electrode, which are spaced apart and are both connected to the piezoelectric photoelectric layer. The magnetostrictive layer deforms under the action of a magnetic field, and the deformation acts on the piezoelectric photoelectric layer. Under the action of the light field and the deformation, the piezoelectric photoelectric layer conducts electricity between the first electrode and the second electrode.

2. The semiconductor device as claimed in claim 1, characterized in that, The first electrode and the second electrode are arranged in a direction parallel to the magnetic axis extension direction of the magnetostrictive layer.

3. The semiconductor device as described in claim 1 or 2, characterized in that, The magnetostrictive layer is made of at least one of terbium-iron-dysprosium alloy and iron-nickel alloy.

4. The semiconductor device according to any one of claims 1-3, characterized in that, The orthogonal projection of the piezoelectric photolayer onto the magnetostrictive layer overlaps with the magnetostrictive layer.

5. The semiconductor device according to any one of claims 1-4, characterized in that, The semiconductor device further includes: a memory adjustment layer, an insulating layer, and a third electrode disposed between the magnetostrictive layer and the piezoelectric photoelectric layer, wherein the third electrode, the insulating layer, and the memory adjustment layer are stacked sequentially along the direction from the magnetostrictive layer to the piezoelectric photoelectric layer; The memory adjustment layer is used to reduce the rate of decrease in carrier concentration in the piezoelectric photoelectric layer during the non-operational phase of the light field, under the control of the voltage applied by the third electrode.

6. The semiconductor device as claimed in claim 5, characterized in that, The material used to fabricate the memory adjustment layer includes at least one of molybdenum distellide and tungsten diselenide.

7. The semiconductor device as described in claim 5 or 6, characterized in that, The material used to fabricate the third electrode includes at least one of graphene, transition metal carbides, and transition metal sulfides.

8. The semiconductor device according to any one of claims 5-7, characterized in that, The semiconductor device further includes a flexible substrate disposed between the magnetostrictive layer and the third electrode.

9. The semiconductor device according to any one of claims 1-8, characterized in that, The materials used to fabricate the piezoelectric photoelectric layer include at least one of indium selenide, niobium oxyiodide, and gallium-based chalcogenides.

10. A magnetostrictive piezoelectric photosynaptic device, characterized in that, Includes the semiconductor device as described in any one of claims 1-9.

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