Substrate processing apparatus and substrate processing method

Abstract

This invention provides a substrate processing apparatus and a substrate processing method capable of reducing the collapse of fine patterns. One substrate processing apparatus of this disclosure includes: a drying apparatus for drying the processed surface of a substrate; a holding portion for holding the substrate dried by the drying apparatus; and an irradiation portion for irradiating the substrate held in the holding portion with infrared light.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Patent Document 1 discloses a phenomenon where capillary condensation occurs due to the capillary force acting on the micro-space when the pattern of micro-grooves is below 100 nm. Patent Document 2 discloses a technique that suppresses moisture absorption and capillary condensation caused by the micro-pattern after supercritical drying by hydrophobizing the surface of the micro-pattern of the substrate.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent No. 6503606

[0006] Patent Document 2: Japanese Patent Application Publication No. 2024-087769 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] This disclosure provides a technique that can reduce the collapse of fine patterns.

[0009] means for solving problems

[0010] A substrate processing apparatus according to the present disclosure includes: a drying device for drying the processing surface of a substrate; a holding portion for holding the substrate after it has been dried by the drying device; and an irradiation portion for irradiating the substrate held in the holding portion with infrared light.

[0011] Invention Effects

[0012] According to this disclosure, it is possible to reduce the collapse of fine patterns. Attached Figure Description

[0013] Figure 1 This is a schematic diagram showing the substrate processing apparatus of the first embodiment.

[0014] Figure 2 This is a cross-sectional view showing an example of a liquid treatment device.

[0015] Figure 3 This is a perspective view showing an example of a drying apparatus.

[0016] Figure 4 Figure (1) shows an example of a junction.

[0017] Figure 5 Figure (2) shows an example of a junction.

[0018] Figure 6 This is a schematic top view showing the substrate processing apparatus of the second embodiment.

[0019] Figure 7 This is a flowchart illustrating the substrate processing method of the second embodiment.

[0020] Explanation of reference numerals in the attached figures

[0021] 1, 100, Substrate processing apparatus; 170, Drying apparatus; 141, Holding section; 142, Irradiation section; W, Substrate. Detailed Implementation

[0022] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the drawings, the same or corresponding components or parts are labeled with the same or corresponding reference numerals, and repeated descriptions are omitted. In this specification, the X-axis, Y-axis, and Z-axis are mutually perpendicular axes. The X-axis and Y-axis are horizontally extending axes, and the Z-axis is a vertically extending axis.

[0023] [First Embodiment]

[0024] (Substrate processing apparatus)

[0025] Reference Figure 1 The substrate processing apparatus 100 of the first embodiment will be described. Figure 1 This is a schematic diagram showing the substrate processing apparatus 100 of the first embodiment.

[0026] The substrate processing apparatus 100 is configured to process substrates W one by one. The substrate processing apparatus 100 includes an infeed / outfeed station 101, a processing station 102, and a control circuit 190.

[0027] The infeed / outfeed station 101 has a placement section 110 and a transport section 120. The placement section 110 is configured to hold multiple carriers C. Multiple substrates W are accommodated horizontally in each carrier C. Each carrier C is, for example, a FOUP (Front Opening Unified Pod). The substrates W are, for example, semiconductor wafers. The processing surface of the substrate W can be formed from any surface of the substrate W. The upper surface of the substrate W can be the processing surface, or both the upper and lower surfaces of the substrate W can be processing surfaces. In this embodiment, the upper surface of the substrate W is the processing surface for forming fine patterns. The transport section 120 is provided with a first transport mechanism 130 and a transfer section 140. The first transport mechanism 130 transports the substrates W between the carriers C placed in the placement section 110 and the transfer section 140. The transfer section 140 temporarily holds the substrates W. Details of the structure of the transfer section 140 will be described later (see [reference]). Figure 4 and Figure 5 ).

[0028] Processing station 102 is adjacent to the positive X-axis side of feed-in / feed-out station 101. Processing station 102 includes a conveying path 150, a liquid treatment device 160, a drying device 170, and a second conveying mechanism 180. One set of liquid treatment device 160 and drying device 170 is provided on the positive Y-axis side of conveying path 150. Alternatively, two or more sets of liquid treatment device 160 and drying device 170 may be provided in multiple layers along the height direction (along the Z-axis) on the positive Y-axis side of conveying path 150. One set of liquid treatment device 160 and drying device 170 is provided on the negative Y-axis side of conveying path 150. Alternatively, two or more sets of liquid treatment device 160 and drying device 170 may be provided in multiple layers on the negative Y-axis side of conveying path 150. In processing station 102, each substrate W is sequentially subjected to liquid treatment by liquid treatment device 160 and drying treatment by drying device 170.

[0029] Liquid treatment apparatus 160 supplies liquid to the treatment surface of substrate W to perform liquid treatment. Examples of liquid treatment include wet etching of the treatment surface of substrate W, cleaning of the treatment surface of substrate W, and liquid film formation of a liquid film on the treatment surface of substrate W. In this embodiment, the treatment surface of substrate W after liquid treatment in liquid treatment apparatus 160 is hydrophilic. For example, by using SC1 (a mixture of deionized water, ammonium hydroxide aqueous solution, and hydrogen peroxide aqueous solution) to perform liquid treatment (cleaning) on ​​the treatment surface of substrate W, the treatment surface exhibits hydrophilicity. Detailed descriptions of the structural example of liquid treatment apparatus 160 will follow (see [reference]). Figure 2 ).

[0030] The drying apparatus 170 performs a supercritical drying process using a supercritical fluid to dry a substrate W having a processed surface with fine patterns. The drying apparatus 170 supplies supercritical fluid to the processed surface of the substrate W where a liquid film is formed, thereby replacing the liquid film on the processed surface with supercritical fluid. Then, the supercritical fluid on the processed surface is vaporized and dispersed, thereby drying the substrate W. The drying apparatus 170 has a drying processing area 170a and a transfer area 170b. Supercritical drying is performed in the drying processing area 170a. In the transfer area 170b, the processes of receiving the substrate W from the second conveying mechanism 180 and transferring the substrate W to the second conveying mechanism 180 are performed. Detailed descriptions of the structural example of the drying apparatus 170 are given later (see [reference]). Figure 3 ).

[0031] In this embodiment, after each substrate W undergoes the aforementioned liquid treatment and drying treatment, it is placed in a carrier C whose humidity has been reduced by an air conditioning unit (not shown) for the carrier C. As a result, while the substrate W is placed in the carrier C, the moisture absorption of the dried substrate W (especially the fine pattern) is reduced, and the collapse of the fine pattern can be suppressed.

[0032] There are no limitations on the structure and method of the device for maintaining a low humidity environment within each carrier C. For example, a purging device (not shown) that functions as an air conditioning unit may be provided in the mounting section 110, and the carrier C may be connected to the purging device when it is placed in the mounting section 110. In this case, by supplying a low-humidity purging gas (such as nitrogen or other inactive gas) from the purging device into the carrier C, the carrier C can be purged using the low-humidity purging gas, thereby adjusting the atmosphere inside the carrier C to a low-humidity state.

[0033] The control circuit 190 is, for example, a computer. The control circuit 190 includes an arithmetic unit 191 such as a CPU (Central Processing Unit) and a storage unit 192 such as a memory. The storage unit 192 stores programs for controlling various processes executed in the board processing apparatus 100. The control circuit 190 controls the operation of the board processing apparatus 100 by causing the arithmetic unit 191 to execute the programs stored in the storage unit 192. The programs may also be stored on storage media (devices) such as hard disks, optical disks, magneto-optical disks, memory cards, or non-volatile memory, and installed from the storage media onto the computer.

[0034] The control circuit 190 includes one or more electronic circuits such as a CPU, FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), and executes various control actions described in this application specification by executing command codes stored in memory or by designing circuits for special purposes.

[0035] (Liquid treatment device)

[0036] Reference Figure 2 An example of the liquid processing device 160 included in the substrate processing device 100 will be described. Figure 2 This is a cross-sectional view showing an example of a liquid treatment device 160.

[0037] The liquid treatment apparatus 160 is configured as a single-piece cleaning apparatus that cleans substrates W one by one by means of rotational cleaning. In the liquid treatment apparatus 160, the substrates W are held approximately horizontally in the processing space within the outer chamber 163 by a substrate holding mechanism 165, and rotate together with the substrate holding mechanism 165 about a vertical axis. A liquid nozzle 166a, located at the front end of the nozzle arm 166, is positioned above the substrates W, and liquid medicine and rinsing liquid are sprayed from the liquid nozzle 166a toward the upper surface (processing surface) of the substrates W, thereby performing cleaning treatment on the upper surface of the substrates W.

[0038] A liquid supply path 165a is formed through the substrate holding mechanism 165. The lower surface of the substrate W is cleaned by using liquid medicine and rinsing liquid sprayed from the liquid supply path 165a toward the lower surface of the substrate W held by the substrate holding mechanism 165.

[0039] As a cleaning process, the liquid treatment apparatus 160 first supplies the substrate W with SC1, an alkaline solution, to remove particulate and organic contaminants, and then supplies the substrate W with deionized water as a rinsing solution for rinsing. In this case, the liquid treatment apparatus 160 then supplies the substrate W with DHF (dilute hydrofluoric acid), an acidic solution, to remove the natural oxide film, and then supplies the substrate W with deionized water for rinsing.

[0040] Various liquid medications supplied to the substrate W are received by the outer chamber 163 and the inner cup 164 inside the outer chamber 163, and discharged from the drain port 163a at the bottom of the outer chamber 163 and the drain port 164a at the bottom of the inner cup 164. The atmosphere inside the outer chamber 163 is discharged from the vent port 163b at the bottom of the outer chamber 163.

[0041] After rinsing and cleaning in the aforementioned cleaning process, the liquid treatment apparatus 160 performs a liquid film formation process to form liquid films on the upper and lower surfaces of the substrate W. Specifically, the substrate W is rotated together with the substrate holding mechanism 165, and liquid IPA (isopropanol) is supplied to the upper and lower surfaces of the substrate W. As a result, the deionized water remaining on both sides of the substrate W is replaced with IPA. Afterward, the rotation of the substrate holding mechanism 165 is slowly stopped.

[0042] The substrate W, in a state where a liquid film of IPA has been formed on its upper surface (i.e., a liquid accumulation state), is transferred from the substrate holding mechanism 165 to the second transport mechanism 180 (see reference 180) via a transfer mechanism (not shown). Figure 1 The liquid film deposited on the substrate W prevents the fine patterns on the upper surface of the substrate W from collapsing due to the evaporation (vaporization) of the liquid on the upper surface of the substrate W during the transfer of the substrate W from the liquid treatment device 160 to the drying device 170 and during the feeding operation into the drying device 170.

[0043] (Drying device)

[0044] Reference Figure 3 An example of the drying apparatus 170 included in the substrate processing apparatus 100 will be described. Figure 3 This is a perspective view showing an example of the drying apparatus 170.

[0045] The drying apparatus 170 is configured, for example, as a supercritical drying apparatus that dries substrates W, on which a liquid film is formed on the surface, by contacting them one by one with a supercritical fluid. The drying apparatus 170 has a container body 171. The container body 171 has an opening 172. The drying apparatus 170 has a cover member 175. The cover member 175 supports a holding plate 176 and is movably disposed to open and close the opening 172. The holding plate 176 holds the substrate W to be processed horizontally. The holding plate 176, along with the substrate W, passes through the opening 172 according to the opening and closing action of the cover member 175 and is disposed in the inner space of the container body 171 (see reference). Figure 1 The drying treatment area 170a) or the exterior of the container body 171 (see reference) Figure 1 (The junction area 170b). By positioning the cover member 175 in the closed position, the opening 172 is airtightly sealed by the cover member 175, and the inner space of the container body 171 is sealed and isolated from the outside.

[0046] The container body 171 is a container with an internal processing space capable of accommodating a substrate W with a diameter of, for example, 300 mm. A fluid supply manifold 177 is provided at one end of the interior of the container body 171. The fluid supply manifold 177 is constructed of a block with numerous openings. Preferably, the openings of the fluid supply manifold 177 are located slightly higher than the upper surface of the substrate W, which is held by the holding plate 176 and accommodated in the processing space. A fluid discharge manifold 178 is provided at the other end of the container body 171. The fluid discharge manifold 178 is constructed of a pipe with numerous openings.

[0047] The fluid supply manifold 177 and the fluid discharge manifold 178 are not limited to Figure 3 Examples are shown. For instance, the fluid discharge manifold 178 can also be constructed from a block, and the fluid supply manifold 177 can also be constructed from a pipe.

[0048] Viewed from below, the retaining plate 176 covers approximately the entire area of ​​the lower surface of the substrate W. The retaining plate 176 has an opening 176a at its end on the side of the cover member 175. Processing fluid in the space above the retaining plate 176 is guided to the fluid discharge manifold 178 through the opening 176a.

[0049] The fluid supply manifold 177 is connected to a first supply line 177a that supplies supercritical fluid to the fluid supply manifold 177. The fluid supply manifold 177 supplies supercritical fluid to the processing space in a horizontal direction. The "horizontal direction" refers to the direction extending from the flat upper and lower surfaces of the substrate W, which is held and housed in the processing space by the holding plate 176.

[0050] The fluid inside the container body 171 is discharged to the outside of the container body 171 via the fluid discharge manifold 178. The fluid discharged via the fluid discharge manifold 178 includes, in addition to the processing fluid supplied to the container body 171 via the fluid supply manifold 177, liquid components (e.g., IPA) dissolved from the surface of the substrate W into the processing fluid.

[0051] A fluid supply nozzle 179 for supplying supercritical fluid to the interior of the container body 171 is provided at the bottom of the container body 171. The fluid supply nozzle 179 is formed by an opening penetrating the bottom wall of the container body 171 and is connected to a second supply line 179a for supplying supercritical fluid to the fluid supply nozzle 179. The fluid supply nozzle 179 is located below the center of the substrate W (e.g., directly below) and supplies the processing fluid toward the center of the substrate W (e.g., vertically upward) into the processing space.

[0052] (Handover Department)

[0053] Reference Figure 4 and Figure 5 An example of the interface 140 provided in the substrate processing apparatus 100 will be described. Figure 4 and Figure 5 This is a diagram showing an example of the junction 140. Figure 4 This shows a state where one substrate W is stored in the junction 140. Figure 5 This shows a state in which multiple substrates W are stored in the junction section 140.

[0054] The transfer section 140 temporarily holds the substrate W. The substrate W includes the substrate before being processed by the liquid treatment apparatus 160 and the drying apparatus 170, and the substrate after being processed by the liquid treatment apparatus 160 and the drying apparatus 170. The transfer section 140 includes a holding section 141, an irradiation section 142, an airflow forming section 143, and a humidity sensor 144.

[0055] The holding part 141 includes a housing 141a and a holding claw 141b. The housing 141a has multiple layers of receiving space internally to accommodate multiple substrates W. A first opening 141c is provided at the upper part of the housing 141a. The first opening 141c functions as an inlet for allowing cleaning gas ejected from the airflow forming part 143 (described later) to flow into the housing 141a. A second opening 141d is provided at the lower part of the housing 141a. The second opening 141d functions as an outlet for allowing cleaning gas to flow out of the housing 141a. The holding claw 141b holds the outer periphery of the substrate W from below inside the housing 141a. The manner in which the holding part 141 holds the substrate W is not limited to… Figure 4 As shown. For example, instead of retaining claw 141b, retaining portion 141 may have a groove (not shown) formed in the inner wall of housing 141a, configured to retain the outer periphery of substrate W from below using the groove.

[0056] The irradiation unit 142 irradiates the substrate W held in the holding unit 141 with infrared light. The infrared light is absorbed by moisture, etc. Therefore, the vapor within the fine patterns formed on the processed surface of the substrate W is heated by the infrared light, suppressing condensation within the fine patterns. Thus, from the time of drying until it is placed in the carrier C, condensation caused by capillary condensation of vapor within the fine patterns formed on the processed surface of the substrate W can be suppressed. As a result, the collapse of the fine patterns caused by the surface tension of water droplets can be reduced. Furthermore, the infrared light passes through the substrate W, such as a semiconductor wafer. Therefore, the substrate W is not heated, and its temperature does not rise. Thus, by irradiating the substrate W held in the holding unit 141 with infrared light by the irradiation unit 142, condensation within the fine patterns formed on the processed surface of the substrate W can be suppressed without causing a temperature rise in the substrate W. Furthermore, as... Figure 5 As shown, even when multiple substrates W are housed in layers inside the housing 141a, the infrared rays irradiated by the irradiation section 142 are not absorbed by the substrates W and reach the upper substrate W. Therefore, for all substrates W inside the housing 141a, condensation in the fine patterns formed on the processed surface of the substrate W can be suppressed without causing the temperature of the substrates W to rise.

[0057] Infrared wavelengths can also be above 1.2 μm and below 10.0 μm. In this case, infrared radiation is easily absorbed by moisture.

[0058] The irradiation section 142 can be disposed below the housing 141a. The irradiation section 142 can serve as a source of particle generation. As described later, a downward flow from top to bottom is formed within the housing 141a. Therefore, when the irradiation section 142 is disposed below the housing 141a, even if particles are generated in the irradiation section 142, the particles will not move towards the housing 141a, but will instead move downward along the downward flow. As a result, the adhesion of particles to the substrate W caused by the irradiation section 142 can be reduced. When the processed surface of the substrate W is the upper surface, although the irradiation section 142 is not opposite to the processed surface of the substrate W, infrared light passes through the substrate W as described above. Therefore, even without flipping the substrate W up and down, the infrared light irradiated by the irradiation section 142 can be used to heat the vapor within the fine pattern formed on the processed surface of the substrate W. In this way, the irradiation section 142 can also irradiate infrared light from the side of the substrate W held in the holding section 141 opposite to the processed surface. The location of the irradiation section 142 is not limited to below the housing 141a. For example, the irradiation part 142 may also be provided inside the housing 141a, such as on the inner side of the housing 141a.

[0059] An airflow forming section 143 is disposed above the housing 141a. The airflow forming section 143 is disposed, for example, to cover the entire housing 141a from above. The airflow forming section 143 forms an airflow in the area including the interior of the housing 141a. The airflow forming section 143 ejects clean gas downwards into the housing 141a. The ejected clean gas forms an airflow that flows into the interior of the housing 141a from the first opening 141c and out through the second opening 141d. That is, the airflow forming section 143 forms an airflow (downward flow) from top to bottom within the housing 141a. The clean gas can also be clean air composed of air from the cleanroom after being filtered by a filter. The airflow forming section 143 is, for example, a fan filter unit (FFU).

[0060] Humidity sensor 144 detects the humidity in the second opening 141d of housing 141a. Humidity sensor 144 sends the detected humidity to control circuit 190. Control circuit 190 can also adjust the output of infrared light irradiated by irradiation unit 142 based on the humidity received from humidity sensor 144. For example, control circuit 190 can also stop infrared light irradiation by irradiation unit 142 if the humidity received from humidity sensor 144 is below a threshold value.

[0061] The control circuit 190 can also adjust the output of infrared rays irradiated by the irradiation unit 142 based on the position and number of substrates W held in the holding section 141. The heat imparted to the vapor within the fine patterns formed on the processed surface of the substrate W varies depending on the distance between the irradiation unit 142 and the substrate W. Furthermore, although infrared rays pass through the substrate W, their energy is attenuated via the substrate W. That is, the heat received from the irradiation unit 142 differs between the initial substrate W held in the holding section 141 and the subsequently supplied substrate W. Therefore, by adjusting the output of infrared rays irradiated by the irradiation unit 142 based on the position and number of substrates W held in the holding section 141, the deviation in the heat imparted to the vapor within the fine patterns formed on the processed surface of each substrate W held in the holding section 141 can be reduced. For example, the control circuit 190 performs the following control: holding the initially supplied substrate W in the holding section 141 at the top layer (first layer) of the holding section 141, holding the subsequently supplied substrate W at the second layer, and reducing the output of infrared rays irradiated by the irradiation unit 142. The control circuit 190 can also perform the same control on subsequent substrates W. In this case, it is possible to reduce the deviation in the heat imparted to the vapor within the fine patterns formed on the processed surfaces of each substrate W.

[0062] (Substrate processing method)

[0063] To Figure 1 An example of a substrate processing method performed by the substrate processing apparatus 100 shown will be described.

[0064] First, the first conveying mechanism 130 removes the substrate W from the carrier C and conveys it to the transfer section 140. Next, the second conveying mechanism 180 removes the substrate W from the transfer section 140 and conveys it to the liquid treatment apparatus 160. Then, the liquid treatment apparatus 160 performs liquid treatment on the substrate W. Next, the second conveying mechanism 180 removes the substrate W from the liquid treatment apparatus 160 and conveys it to the drying apparatus 170. Then, the drying apparatus 170 performs drying treatment on the substrate W.

[0065] Next, the second conveying mechanism 180 removes the substrate W from the drying apparatus 170 and conveys it to the transfer section 140. In the transfer section 140, the irradiation section 142 irradiates infrared light onto the substrate W held in the holding section 141. As a result, the vapor in the fine pattern formed on the processed surface of the substrate W is heated by the infrared light, suppressing condensation in the fine pattern. Therefore, from the time the drying process is performed until it is placed in the carrier C, condensation caused by capillary condensation in the fine pattern formed on the processed surface of the substrate W can be suppressed. As a result, the collapse of the fine pattern caused by the surface tension of water droplets can be reduced. In the transfer section 140, the airflow forming section 143 can also form an airflow in the area including the interior of the housing 141a.

[0066] Next, the first conveying mechanism 130 removes the substrate W from the transfer section 140 and conveys it to the carrier C. The humidity inside the carrier C can also be reduced using an air conditioning unit. In this case, while the substrate W is contained in the carrier C, the moisture absorption of the dried substrate W (especially the fine pattern) is reduced, and the collapse of the fine pattern can be suppressed. The carrier C is then conveyed from the mounting section 110 in a state that contains multiple substrates W.

[0067] The substrate processing method performed by the substrate processing apparatus 100 is thus completed.

[0068] [Second Implementation]

[0069] (Substrate processing apparatus)

[0070] Reference Figure 6 The substrate processing apparatus 1 of the second embodiment will be described. Figure 6 This is a schematic top view of the substrate processing apparatus 1 according to the second embodiment.

[0071] The substrate processing apparatus 1 is configured to perform both processing of a batch L containing multiple substrates W together and processing of each substrate W in the batch L individually. The substrate processing apparatus 1 includes an infeed / outfeed unit 2, a first interface unit 3, a batch processing unit 4, a second interface unit 5, a single-wafer processing unit 6, and a control circuit 9.

[0072] The feed-in / feed-out section 2 serves as both a feed-in section and a feed-out section. Therefore, the substrate processing apparatus 1 can be miniaturized. The feed-in / feed-out section 2 includes a loading port 21, a storage section 22, a loading section 23, and a carrier transport device 24.

[0073] Loading ports 21 are located on the negative side of the X-axis of the feed / discharge section 2. Multiple loading ports 21 (e.g., 4) are arranged along the Y-axis. The number of loading ports 21 is not particularly limited. A carrier C is placed in the loading ports 21. The carrier C accommodates multiple (e.g., 25) substrates W. The carrier C is fed in and out relative to the loading ports 21. Inside the carrier C, the substrates W are held horizontally and held along the Z-axis at a second spacing P2 (P2 = N × P1) that is, N times the first spacing P1. N is a natural number greater than or equal to 2; in this embodiment, it is 2, but it can also be 3 or greater.

[0074] Multiple storage units 22 are arranged along the Y-axis at the center of the X-axis of the feed-in / feed-out unit 2. Multiple storage units 22 are also arranged adjacent to the first interface unit 3 along the Y-axis on the positive side of the X-axis of the feed-in / feed-out unit 2 (for example, two). Storage units 22 may also be arranged in multiple layers along the Z-axis. The storage units 22 temporarily store carriers C containing the substrate W before cleaning, carriers C that have been emptied after removing the substrate W, etc. The number of storage units 22 is not particularly limited.

[0075] The loading section 23 is adjacent to the first interface section 3. The loading section 23 is positioned on the X-axis side of the feed-in / feed-out section 2. The carrier C is placed in the loading section 23. The loading section 23 is provided with a cover opening and closing mechanism (not shown) for opening and closing the cover of the carrier C. Multiple loading sections 23 may be provided. The loading sections 23 may also be arranged in multiple layers along the Z-axis.

[0076] The carrier conveying device 24 conveys the carrier C between the loading port 21, the storage section 22, and the loading section 23. The carrier conveying device 24 is, for example, a multi-joint conveyor robot.

[0077] The first interface section 3 is located on the positive side of the X-axis of the feed-in / feed-out section 2. The first interface section 3 transports the substrate W between the feed-in / feed-out section 2, the batch processing section 4, and the single-wafer processing section 6. The first interface section 3 includes a substrate transfer device 31, a batch forming section 32, and a first transfer section 33.

[0078] The substrate transfer device 31 transports substrates W between the carrier C placed in the loading section 23, the batch forming section 32, and the first transfer section 33. The substrate transfer device 31 is composed of a multi-axis (e.g., 6-axis) arm robot, and has a substrate holding arm 31a at its front end. The substrate holding arm 31a has multiple holding claws (not shown) capable of holding multiple (e.g., 25) substrates W. The substrate holding arm 31a can take any position and posture in three-dimensional space while holding the substrates W using the holding claws.

[0079] The batch forming section 32 is disposed on the positive side of the X-axis of the first interface section 3. The batch forming section 32 holds multiple substrates W with a first pitch P1 (P1 = P2 / N) to form a batch L.

[0080] The first transfer section 33 is adjacent to the single-piece processing section 6. The first transfer section 33 is located on the positive Y-axis side of the first interface section 3. The first transfer section 33 receives the substrate W from the fourth conveying device 61 and temporarily holds it until it is transferred to the infeed / outfeed section 2. The first transfer section 33 may also have the same structure as the transfer section 140 described above. In this case, from the time the drying process is completed until it is placed in the carrier C, condensation caused by capillary condensation due to vapor in the fine patterns formed on the processed surface of the substrate W can be suppressed. As a result, the collapse of the fine patterns caused by the surface tension of water droplets can be reduced.

[0081] The batch processing unit 4 is disposed on the positive X-axis side of the first interface unit 3. The feed-in / feed-out unit 2, the first interface unit 3, and the batch processing unit 4 are arranged sequentially from the negative X-axis side toward the positive X-axis side. The batch processing unit 4 processes batches L containing multiple (e.g., 50 or 100) substrates W at a first interval P1. One batch L consists, for example, of M substrates W with carriers C. M is a natural number of 2 or more. M can be the same natural number as N or a natural number different from N. The batch processing unit 4 includes a medicine tank 41, a rinsing liquid tank 42, a first conveying device 43, a processing device 44, and a drive device 45.

[0082] The chemical solution tank 41 and the rinsing solution tank 42 are arranged along the X-axis. For example, the chemical solution tank 41 and the rinsing solution tank 42 are arranged sequentially from the positive side of the X-axis to the negative side of the X-axis. The chemical solution tank 41 and the rinsing solution tank 42 are also collectively referred to as treatment tanks. The number of chemical solution tanks 41 and rinsing solution tanks 42 is not limited. Figure 6 The quantity. For example, the medicine tank 41 and the rinsing liquid tank 42 are in Figure 6 There can be one group, but there can also be multiple groups.

[0083] The chemical solution tank 41 stores the chemical solution for batch L immersion. The chemical solution is, for example, an aqueous phosphoric acid solution (H3PO4). The aqueous phosphoric acid solution selectively etches and removes the silicon nitride film from the silicon oxide film and the silicon nitride film. The chemical solution is not limited to an aqueous phosphoric acid solution. The chemical solution can also be DHF (dilute hydrofluoric acid), BHF (a mixture of hydrofluoric acid and ammonium fluoride), dilute sulfuric acid, SPM (a mixture of sulfuric acid, hydrogen peroxide, and water), SC1 (a mixture of ammonia, hydrogen peroxide, and water), SC2 (a mixture of hydrochloric acid, hydrogen peroxide, and water), TMAH (a mixture of tetramethylammonium hydroxide and water), plating solution, etc. The chemical solution can also be used for stripping or plating. There is no particular limitation on the quantity of chemical solution; multiple solutions can be used.

[0084] Rinse tank 42 stores the first rinse solution for batch L immersion. The first rinse solution is pure water, such as deionized water, used to remove the chemical solution from the substrate W.

[0085] The first conveying device 43 has a guide rail 43a and a first conveying arm 43b. The guide rail 43a is positioned on the negative side of the Y-axis relative to the processing tank. The guide rail 43a extends from the first interface section 3 towards the batch processing section 4 along the X-axis. The first conveying arm 43b moves along the guide rail 43a. The first conveying arm 43b can move along the Z-axis and rotate about the Z-axis. The first conveying arm 43b conveys batch L together between the first interface section 3 and the batch processing section 4.

[0086] The processor 44 receives and holds batch L from the first transport arm 43b. The processor 44 holds a plurality of substrates W along the Y-axis at a first spacing P1, and holds the plurality of substrates W vertically respectively.

[0087] The drive unit 45 moves the processing device 44 along the X and Z axes. The processing device 44 immerses batch L in the medicine solution stored in the medicine tank 41, then immerses batch L in the first rinsing solution stored in the rinsing solution tank 42, and then transfers batch L to the first conveying device 43.

[0088] In this embodiment, the number of units for the processing apparatus 44 and the drive device 45 is one, but it can also be multiple. In the latter case, one unit immerses batch L in the medicine solution stored in the medicine tank 41, and another unit immerses batch L in the first rinsing solution stored in the rinsing solution tank 42. In this case, the drive device 45 only needs to move the processing apparatus 44 along the Z-axis, or it may not need to move the processing apparatus 44 along the X-axis.

[0089] The second interface section 5 is disposed on the positive side of the Y-axis of the batch processing section 4. The second interface section 5 transports the substrate W between the batch processing section 4 and the single-piece processing section 6. The second interface section 5 has an impregnation tank 51, a second conveying device 52, a third conveying device 53, and a second junction section 54.

[0090] The impregnation tank 51 is positioned outside the travel range of the first conveyor arm 43b. For example, the impregnation tank 51 is positioned offset towards the positive Y-axis relative to the processing tank. The impregnation tank 51 stores a second rinsing solution for impregnating batch L. The second rinsing solution is, for example, deionized water. The substrate W is held in the second rinsing solution until it is lifted from the second rinsing solution by the third conveyor 53. Since the substrate W is located below the surface of the second rinsing solution, the surface tension of the second rinsing solution does not act on the substrate W, thus preventing the collapse of the fine patterns on the substrate W.

[0091] The second conveying device 52 has a Y-axis drive device 52a, a Z-axis drive device 52b, and a second conveying arm 52c.

[0092] Y-axis drive unit 52a is disposed on the X-axis side of the second interface section 5. Y-axis drive unit 52a extends from the second interface section 5 toward the batch processing section 4 along the Y-axis. Y-axis drive unit 52a moves Z-axis drive unit 52b and second conveyor arm 52c along the Y-axis. Y-axis drive unit 52a may also include a ball screw.

[0093] Z-axis drive unit 52b is movably mounted on Y-axis drive unit 52a. Z-axis drive unit 52b moves the second conveyor arm 52c along the Z-axis. Z-axis drive unit 52b may also include a ball screw.

[0094] The second conveying arm 52c is movably mounted on the Z-axis drive device 52b. The second conveying arm 52c receives and holds batch L from the first conveying arm 43b. The second conveying arm 52c holds multiple substrates W along the Y-axis at a first spacing P1, and holds the multiple substrates W vertically respectively. The second conveying arm 52c moves along the Y-axis and Z-axis using the Y-axis drive device 52a and the Z-axis drive device 52b. The second conveying arm 52c is configured to move between multiple positions, including a handover position, an immersion position, and a standby position.

[0095] The handover location is between the first conveyor arm 43b and the second conveyor arm 52c, where batch L is handed over. The handover location is on the negative side of the Y-axis and the positive side of the Z-axis.

[0096] The immersion position is the location where batch L is immersed in the immersion tank 51. The immersion position is located on the positive side of the Y-axis and the negative side of the Z-axis, which is closer to the junction position.

[0097] The standby position is the position where the second conveyor arm 52c is idle when batch L is not being transferred or when batch L is being immersed in the immersion tank 51. The standby position is directly below the transfer position (negative Z-axis side), a position that does not obstruct the movement of the first conveyor arm 43b. In this case, the second conveyor arm 52c can move to the transfer position simply by moving upwards (positive Z-axis side), thus increasing productivity. The standby position can also be the same as the immersion position. In this case, it is possible to prevent particles that may be generated during the operation of the first conveyor 43 from adhering to the second conveyor arm 52c. The standby position can also be directly above the immersion position (positive Z-axis side). Thus, by setting the standby position to a position different from the transfer position, it is possible to prevent contact between the first conveyor arm 43b and the second conveyor arm 52c.

[0098] During the operation of the first conveying device 43, the second conveying device 52 moves the second conveying arm 52c to the immersion position or the standby position. This prevents the first conveying arm 43b from contacting the second conveying arm 52c.

[0099] The third conveying device 53 is composed of a multi-axis (e.g., 6-axis) arm robot, with a third conveying arm 53a at its front end. The third conveying arm 53a has a holding claw (not shown) capable of holding one substrate W. The third conveying arm 53a can take any position and posture in three-dimensional space while holding the substrate W using the holding claw. The third conveying device 53 conveys the substrate W between the second conveying arm 52c located at the immersion position and the second junction 54. At this time, since the immersion tank 51 is located outside the movement range of the first conveying arm 43b, the first conveying arm 43b and the third conveying arm 53a do not interfere with each other. As a result, one of the first conveying device 43 and the third conveying device 53 can operate independently of the other's operating state. Therefore, the first conveying device 43 and the third conveying device 53 can be operated at any time, thus shortening the time required for conveying the substrate W. As a result, the productivity of the substrate processing apparatus 1 is improved.

[0100] The second transfer section 54 is adjacent to the single-wafer processing section 6. The second transfer section 54 is located on the negative X-axis side of the second interface section 5. The second transfer section 54 receives the substrate W from the third conveying device 53 and temporarily holds it until it is transferred to the single-wafer processing section 6. The substrate W removed from the impregnation tank 51 is placed on the second transfer section 54. The substrate W placed on the second transfer section 54 is preferably in a state where its surface is wetted by the second rinsing liquid. In this case, the surface tension of the second rinsing liquid does not act on the substrate W, and the collapse of the fine patterns on the substrate W can be suppressed. The number of second transfer sections 54 can be one or more.

[0101] The single-wafer processing unit 6 is disposed on the negative X-axis side of the second interface unit 5. The single-wafer processing unit 6 is disposed on the positive Y-axis side of the feed-in / feed-out unit 2, the first interface unit 3, and the batch processing unit 4. The single-wafer processing unit 6 processes the substrates W one by one. The single-wafer processing unit 6 includes a fourth conveying device 61, a liquid treatment device 62, and a drying device 63.

[0102] The fourth conveying device 61 has a guide rail 61a and a fourth conveying arm 61b.

[0103] The guide rail 61a is disposed on the negative side of the Y-axis of the monolithic processing unit 6. The guide rail 61a extends along the X-axis in the monolithic processing unit 6.

[0104] The fourth conveying arm 61b moves along the guide rail 61a. The fourth conveying arm 61b rotates about the Z-axis. The fourth conveying arm 61b conveys the substrate W between the second junction 54, the liquid treatment device 62, the drying device 63, and the first junction 33. The number of fourth conveying arms 61b can be one or more. In the latter case, the fourth conveying device 61 conveys multiple (e.g., five) substrates W at the same time.

[0105] The liquid treatment device 62 is disposed on the positive X-axis and positive Y-axis sides of the monolithic processing unit 6. The liquid treatment device 62 is monolithic and processes each substrate W individually using the processing liquid. The liquid treatment device 62 is disposed in multiple layers (e.g., 3 layers) along the Z-axis. Therefore, multiple substrates W can be processed simultaneously using the processing liquid. The processing liquid can be various, such as pure water (e.g., deionized water) and a drying liquid with a lower surface tension than pure water. The drying liquid can also be, for example, ethanol such as IPA.

[0106] The drying device 63 is arranged adjacent to the liquid treatment device 62 on the negative side of the X-axis. In this case, the end face of the monolithic processing unit 6 on the positive side of the Y-axis can be arranged to be flush or substantially flush with the end face of the second interface unit 5 on the positive side of the Y-axis. Therefore, almost no dead zone is generated, thus reducing the area occupied by the substrate processing device 1. In contrast, if the drying device 63 is arranged adjacent to the liquid treatment device 62 on the positive side of the Y-axis, the end face of the monolithic processing unit 6 on the positive side of the Y-axis protrudes beyond the end face of the second interface unit 5 on the positive side of the Y-axis, potentially creating a dead zone. The drying device 63 is monolithic and dries the substrates W one by one using supercritical fluid. The drying device 63 is arranged in multiple layers (e.g., 3 layers) along the Z-axis. As a result, multiple substrates W can be dried simultaneously.

[0107] Alternatively, the liquid treatment device 62 and the drying device 63 may not be single-piece units, or the liquid treatment device 62 may be a single-piece unit while the drying device 63 is a batch unit. The drying device 63 may also use supercritical fluid to dry multiple substrates W simultaneously. The number of substrates W processed simultaneously in the drying device 63 may be more than the number of substrates W processed simultaneously in the liquid treatment device 62, but it may also be less. Alternatively, devices other than the liquid treatment device 62 and the drying device 63 may be arranged in the single-piece processing unit 6.

[0108] In this embodiment, after each substrate W undergoes the aforementioned liquid treatment and drying treatment, it is placed in a carrier C whose humidity has been reduced by an air conditioning unit (not shown) for the carrier C. As a result, while the substrate W is placed in the carrier C, the moisture absorption of the dried substrate W (especially the fine pattern) is reduced, and the collapse of the fine pattern can be suppressed.

[0109] There are no limitations on the structure and method of the device for maintaining a low humidity environment within each carrier C. For example, a purging device (not shown) that functions as an air conditioning unit may be installed at the loading port 21, and the carrier C may be connected to the purging device when placed in the loading port 21. In this case, by supplying a low-humidity purging gas (such as nitrogen or other inactive gas) from the purging device into the carrier C, the carrier C can be purged using the low-humidity purging gas, thereby adjusting the atmosphere inside the carrier C to a low-humidity state.

[0110] The control circuit 9 is, for example, a computer. The control circuit 9 includes an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores programs for controlling various processes executed in the board processing apparatus 1. The control circuit 9 controls the operation of the board processing apparatus 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. The programs may also be stored on storage media (devices) such as hard disks, optical disks, magneto-optical disks, memory cards, or non-volatile memory, and installed from the storage media onto the computer.

[0111] The control circuit 9 includes one or more electronic circuits such as a CPU, FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), and executes various control actions described in this application specification by executing command codes stored in memory or by designing circuits for special purposes.

[0112] In the substrate processing apparatus 1, the substrate W is conveyed from the infeed and outfeed unit 2 in the order of the first interface unit 3, the batch processing unit 4, the second interface unit 5, and the single-piece processing unit 6, and then returned to the infeed and outfeed unit 2.

[0113] (Substrate processing method)

[0114] Reference Figure 7 , for Figure 6 An example of a substrate processing method performed by the substrate processing apparatus 1 shown will be described. Figure 7 This is a flowchart illustrating the substrate processing method of the second embodiment. Figure 7 The process shown is implemented under the control of control circuit 9.

[0115] First, the carrier C, containing multiple substrates W, is fed into the feed / ejection section 2 and placed in the loading port 21. Inside the carrier C, the substrates W are held horizontally and vertically at a second spacing P2 (P2 = N × P1). N is a natural number of 2 or more, which is 2 in this embodiment, but can also be 3 or more.

[0116] Next, the carrier conveying device 24 conveys the carrier C from the loading port 21 to the loading section 23. The carrier C delivered to the loading section 23 has its cover opened using the cover opening and closing mechanism.

[0117] Next, the substrate transfer device 31 receives the substrate W (containing the carrier C) Figure 7 S1), and is conveyed to the batch forming section 32.

[0118] Next, the batch forming unit 32 holds multiple substrates W at a first pitch P1 (P1 = P2 / N) to form a batch L ( Figure 7 (S2). One batch L consists of, for example, M substrates W of carrier C. Since the spacing between substrates W narrows from the second spacing P2 to the first spacing P1, the number of substrates W processed at the same time can be increased.

[0119] Next, the first conveying device 43 receives batch L from the batch forming unit 32 and conveys it to the processing unit 44.

[0120] Next, the processing device 44 descends from above the liquid tank 41, immersing batch L in the liquid to perform liquid treatment. Figure 7 (S3). Then, the processor 44 rises to lift batch L from the liquid and then moves horizontally (negative side of the X-axis) above the rinsing tank 42.

[0121] Next, the processing device 44 descends from above the rinsing solution tank 42, immersing batch L in the first rinsing solution to perform rinsing solution treatment. Figure 7 (S3). Then, the processing device 44 rises to lift batch L from the first rinsing liquid. Next, the first conveying device 43 receives batch L from the processing device 44 and transfers it to the second conveying device 52.

[0122] Next, the second conveying arm 52c of the second conveying device 52 moves horizontally (positive side of the Y-axis) and descends from above the immersion tank 51, immersing batch L in the second rinsing solution ( Figure 7 (S4). Multiple substrates W of batch L are held in the second rinsing liquid until they are lifted from the second rinsing liquid by the third conveying device 53. Since the substrates W are located at a position lower than the liquid surface of the second rinsing liquid, the surface tension of the second rinsing liquid does not act on the substrates W, thus preventing the collapse of the fine patterns on the substrates W.

[0123] Next, the third conveying device 53 conveys the batch of substrates W held in the second rinsing liquid by the second conveying arm 52c to the second transfer section 54. For example, the third conveying device 53 conveys the substrates W one by one to the second transfer section 54.

[0124] Next, the fourth conveying device 61 receives the substrate W from the second transfer section 54 and conveys it to the liquid treatment device 62.

[0125] Next, the liquid processing apparatus 62 processes the substrates W one by one using liquid. Figure 7 (S5). The liquid can be of various types, such as pure water like deionized water and a drying liquid with a lower surface tension than pure water. The drying liquid can also be, for example, ethanol such as IPA. The liquid treatment apparatus 62 sequentially supplies pure water and drying liquid to the upper surface of the substrate W to form a liquid film of drying liquid.

[0126] Next, the fourth conveying device 61 receives the substrate W from the liquid treatment device 62, and holds the substrate W horizontally with the liquid film of the drying liquid facing upwards. The fourth conveying device 61 conveys the substrate W from the liquid treatment device 62 to the drying device 63.

[0127] Next, the drying apparatus 63 uses supercritical fluid to dry the substrates W one by one. Figure 7 (S5). It can replace the drying liquid with supercritical fluid, which can suppress the collapse of the fine patterns on the substrate W caused by the surface tension of the drying liquid. Supercritical fluid requires a pressure vessel, so in order to miniaturize the pressure vessel, it is processed on a single sheet instead of in batches.

[0128] Furthermore, while the drying apparatus 63 is a single-piece type in this embodiment, it can also be a batch type, as described above. The batch drying apparatus 63 uses a supercritical fluid to dry multiple substrates W on which a liquid film has been formed simultaneously. The single-piece drying apparatus 63 has one conveying arm for holding the substrates W, whereas the batch drying apparatus 63 has multiple conveying arms.

[0129] In this embodiment, the drying apparatus 63 dries the substrate W using supercritical drying, but the drying method is not particularly limited. The drying method can be any method that can suppress the collapse of the fine patterns on the substrate W; for example, it can be rotary drying, scanning drying, or hydrophobic drying. In rotary drying, the liquid treatment apparatus 62 rotates the substrate W, using centrifugal force to throw the drying liquid off the substrate W, thereby removing the drying liquid from the upper surface of the substrate W. In scanning drying, the substrate W is rotated while the supply position of the drying liquid is moved from the center of the substrate W toward the outer periphery of the substrate W, using centrifugal force to throw the liquid film off the substrate W. Scanning drying can also involve moving the supply position of a drying gas, such as nitrogen, from the center of the substrate W toward the outer periphery of the substrate W in a manner that follows the supply position of the drying liquid.

[0130] Next, the fourth conveying device 61 receives the substrate W from the drying device 63 and conveys it to the first transfer section 33. The first transfer section 33 may also have the same structure as the transfer section 140. That is, the first transfer section 33 may also have a holding section 141, an irradiation section 142, an airflow forming section 143, and a humidity sensor 144. Next, the irradiation section 142 irradiates infrared light onto the substrate W held in the holding section 141. As a result, the vapor in the fine pattern formed on the processed surface of the substrate W is heated by infrared light, suppressing condensation in the fine pattern. Therefore, from the time the drying process is performed until it is placed in the carrier C, condensation caused by capillary condensation in the fine pattern formed on the processed surface of the substrate W can be suppressed. As a result, the collapse of the fine pattern caused by the surface tension of water droplets can be reduced. In the first transfer section 33, the airflow forming section 143 may also form an airflow in the area including the interior of the housing 141a.

[0131] Next, the substrate transfer device 31 receives the substrate W from the first transfer portion 33 and houses it within the carrier C. Figure 7 (S6). Humidity can also be reduced within the carrier C using an air conditioning unit. In this case, during the period when the substrate W is contained in the carrier C, the moisture absorption of the dried substrate W (especially the fine pattern) is reduced, and the collapse of the fine pattern can be suppressed. The carrier C is conveyed out from the feeding and discharging unit 2 while containing multiple substrates W.

[0132] The substrate processing method performed by substrate processing apparatus 1 is now complete.

[0133] The embodiments disclosed herein should be considered illustrative rather than restrictive in all respects. The above embodiments may also be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

Claims

1. A substrate processing apparatus, wherein, The substrate processing apparatus includes: A drying device that dries the treated surface of the substrate; A holding section that holds the substrate after it has been dried by the drying apparatus; and An irradiation section irradiates the substrate held in the holding section with infrared light.

2. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus includes an airflow forming section disposed above the holding section, which forms an airflow in the region including the holding section. The irradiation section is located below the holding section.

3. The substrate processing apparatus according to claim 1, wherein, The irradiation section irradiates the infrared rays from the side of the substrate held in the holding section opposite to the processing surface.

4. The substrate processing apparatus according to claim 2, wherein, The retaining portion has a housing that internally accommodates the substrate. A first opening is formed in the upper part of the housing. A second opening is formed in the lower part of the housing. The airflow forming section forms the airflow that flows into the interior of the housing from the first opening and out from the second opening.

5. The substrate processing apparatus according to claim 4, wherein, The substrate processing apparatus includes a humidity sensor for detecting the humidity of the second opening of the housing.

6. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus includes: A liquid processing apparatus that performs a process to form a liquid film on the processing surface of the substrate; and The conveying unit transports the substrate, after being processed by the liquid treatment device, to the drying device. The drying apparatus dries the substrate by displacing the liquid film formed on the treated surface of the substrate with a supercritical fluid.

7. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus includes a batch processing unit that processes batches containing multiple said substrates simultaneously. The substrates processed by the drying apparatus are those included in the batch after being processed by the batch processing unit.

8. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus includes: A carrier that internally houses the substrate held in the holding portion; and The air conditioning unit adjusts the interior of the carrier to a low-humidity atmosphere.

9. The substrate processing apparatus according to claim 1, wherein, The substrate processing device includes a control circuit. The control circuit adjusts the output of the infrared rays irradiated by the irradiation unit based on the position and number of the substrates held in the holding part.

10. The substrate processing apparatus according to claim 5, wherein, The substrate processing device includes a control circuit. The control circuit adjusts the output of the infrared rays irradiated by the irradiation unit based on the humidity detected by the humidity sensor.

11. The substrate processing apparatus according to any one of claims 1 to 10, wherein, The wavelength of the infrared rays irradiated by the irradiation unit is 1.2 μm or more and 10.0 μm or less.

12. A substrate processing method, wherein, The substrate processing method includes the following steps: Dry the treated surface of the substrate; The holding section holds the substrate after the processed surface has dried; and Infrared light is irradiated onto the substrate held in the holding portion.

Images