Semiconductor manufacturing apparatus
By using adhesive layers and insulating bases with similar dielectric constants to connect conductive bases in semiconductor manufacturing equipment, the arcing problem between electrostatic chucks and power supply devices is solved, improving the safety and reliability of the equipment and preventing damage to the dielectric layer.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HUAWEI TECH CO LTD
- Filing Date
- 2025-01-24
- Publication Date
- 2026-07-31
AI Technical Summary
In semiconductor manufacturing equipment, the limited space between the electrostatic chuck and the power supply device makes it easy for arcing to occur between the conductive base and the metal machine, which can damage the dielectric layer of the electrostatic chuck and the wafer.
By setting a conductive base on the insulating base and bonding it with an adhesive layer, the gap between the conductive base and the insulating base is reduced. Using an adhesive layer and an insulating base with similar dielectric constants smooths the electric field distribution, reduces the formation of triple points at the tip, and enhances the strength of the insulation structure.
It effectively prevents arcing between the power supply device and the metal machine base, improves the safety and reliability of the electrostatic chuck, reduces the risk of dielectric layer breakdown, and improves the equipment's withstand voltage performance.
Smart Images
Figure CN122497330A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor manufacturing technology, and more particularly to a semiconductor manufacturing apparatus. Background Technology
[0002] In semiconductor manufacturing equipment, electrostatic chucks are used to electrostatically hold and hold wafers, facilitating wafer processing, manufacturing, and measurement. Semiconductor manufacturing equipment also includes a power supply unit. The power supply unit comprises an insulating base and conductive components. The insulating base is mounted on the metal frame of the semiconductor manufacturing equipment. The conductive components, mounted on the insulating base, transmit current from an external power source to the electrostatic chuck to supply power to it.
[0003] In semiconductor manufacturing equipment, such as metrology equipment, there may be scenarios where a high bias voltage is applied to the wafer held by an electrostatic chuck. During the application of this high bias voltage to the wafer, due to the limited space between the electrostatic chuck and the power supply device, arcing can easily occur between the conductive base of the power supply device and the metal platform. This can lead to excessive potential across the dielectric layer between the electrostatic chuck and the wafer, and in severe cases, may cause the dielectric layer to break down, thereby damaging the electrostatic chuck. Summary of the Invention
[0004] This application provides a semiconductor manufacturing apparatus to prevent arcing between the power supply device and the metal machine base.
[0005] To achieve the above objectives, this application adopts the following technical solution:
[0006] This application provides a semiconductor manufacturing apparatus, which includes a metal stage, an electrostatic chuck, and a power supply device. The electrostatic chuck includes an electrode interface. The power supply device includes an insulating base, a conductive seat, an interface connection portion, and an adhesive layer. The insulating base is disposed on the metal stage. The conductive seat is disposed on the side of the insulating base opposite to the metal stage. The interface connection portion is disposed on the side of the conductive seat opposite to the insulating base, and the interface connection portion electrically connects the electrode interface and the conductive seat. The conductive seat is bonded to the insulating base by the adhesive layer.
[0007] In the semiconductor manufacturing equipment disclosed in this application, the interface connection of the power supply device is electrically connected to the electrode interface and the conductive base. Current can be transmitted to the electrode interface in sequence through the conductive base and the interface connection, thereby supplying power to the electrostatic chuck. The electrostatic chuck uses electrostatic induction to attract and hold the wafer, thereby enabling wafer processing, manufacturing, measurement, and other processes.
[0008] Because the insulating base is mounted on the metal machine tool, and the conductive base is bonded to the insulating base with an adhesive layer, the conductive base and the insulating base can be connected more tightly, reducing the gaps between the conductive base and the insulating component (the gaps contain gas or other media). This reduces the sharp points formed by the gaps between the conductive base and the insulating base (at the sharp point, electric field, charge distribution, and discharge phenomena converge, referred to as the sharp triple point). In high-voltage, high-potential scenarios, the sharp triple point has a large curvature, dense electric field lines, and a large potential gradient, which can cause some of the gas at the sharp triple point to break down and discharge, leading to arcing. Therefore, reducing the number of sharp points prevents the sharp points from breaking down the insulating base, thus preventing arcing between the conductive base and the metal machine tool, and further preventing the dielectric layer between the electrostatic chuck and the wafer from being broken down, thus damaging the electrostatic chuck. Therefore, the technical solution of this application can prevent arcing between the power supply device and the metal machine tool, thereby preventing damage to the electrostatic chuck, reducing the withstand voltage performance of the electrostatic chuck under high voltage loads, and improving the safety and reliability of the electrostatic chuck.
[0009] In one embodiment, the absolute value of the difference between the relative permittivity of the insulating base and the relative permittivity of the adhesive layer is less than the absolute value of the difference between the permittivity of the insulating base and the permittivity of the conductive base.
[0010] This can be understood as the dielectric constant of the adhesive layer being closer to that of the insulating base than that of the conductive base.
[0011] By making the dielectric constant of the adhesive layer closer to that of the insulating base, the electric field distribution at the interfaces between the conductive base and the adhesive layer, and between the adhesive layer and the insulating base, is smoother, preventing three-phase point gaps with excessively large dielectric constant differences. The smooth transition of the electric field distribution means a more uniform electric field intensity throughout the structure, reducing the possibility of arcing caused by excessively high local electric fields. Therefore, a smooth electric field distribution helps reduce abrupt changes in the electric field at the interfaces between the conductive base and the adhesive layer, and between the adhesive layer and the insulating base, thereby reducing the risk of arcing due to electric field concentration.
[0012] The dielectric constant of the adhesive layer is closer to that of the insulating base. The interface between the conductive base and the adhesive layer, as well as the interface between the adhesive layer and the insulating base, is less prone to charge accumulation. The possibility of charge accumulation is reduced, which helps to reduce electric field distortion caused by charge accumulation, thereby reducing the risk of arcing caused by charge accumulation.
[0013] The dielectric constant of the adhesive layer is closer to that of the insulating base, which increases the strength of the insulation structure between the metal base and the conductive base, thereby preventing or delaying the current flow and reducing the risk of arcing between the metal base and the conductive base.
[0014] Under the same electric field strength, adhesive layers and insulating bases with similar dielectric constants are more likely to work together to resist the destructive effects of the electric field. Furthermore, adhesive layers and insulating bases with similar dielectric constants generate less stress between them, reducing stress and thus mitigating the risk of arcing.
[0015] In one embodiment, the ratio of the dielectric constant of the insulating base to the dielectric constant of the adhesive layer is ≤10:1, or the ratio of the dielectric constant of the adhesive layer to the dielectric constant of the insulating base is ≤10:1.
[0016] This limits the difference between the dielectric constant of the insulating component and the dielectric constant of the adhesive layer, thereby making the electric field distribution more uniform at the interface between the conductive base and the adhesive layer, and at the interface between the adhesive layer and the insulating base. This further reduces charge accumulation and stress differences, and increases the strength of the insulation structure between the metal base and the conductive base, thus further reducing the risk of arcing.
[0017] In some embodiments, the dielectric constant of the adhesive layer is less than the dielectric constant of the insulating base, and the ratio of the dielectric constant of the insulating base to the dielectric constant of the adhesive layer is ≤10:1. For example, the ratio of the dielectric constant of the insulating base to the dielectric constant of the adhesive layer is 5:1 or 7:1.
[0018] In other embodiments, the dielectric constant of the adhesive layer is greater than that of the insulating base, and the ratio of the dielectric constant of the adhesive layer to that of the insulating base is ≤10:1. For example, the ratio of the dielectric constant of the adhesive layer to that of the insulating base is 3:1 or 8:1.
[0019] In one embodiment, the absolute value of the difference between the dielectric constant of the conductive base and the dielectric constant of the adhesive layer is less than the absolute value of the difference between the dielectric constant of the insulating base and the dielectric constant of the conductive base.
[0020] This can be understood as the dielectric constant of the adhesive layer being closer to that of the conductive base than that of the insulating base.
[0021] By making the dielectric constant of the adhesive layer closer to that of the conductive base, the electric field distribution at the interfaces between the conductive base and the adhesive layer, and between the adhesive layer and the insulating base, is smoother, preventing three-phase point gaps with excessively large dielectric constant differences. The smooth transition of the electric field distribution means a more uniform electric field intensity throughout the structure, reducing the possibility of arcing caused by excessively high local electric fields. Therefore, a smooth electric field distribution helps reduce abrupt changes in the electric field at the interfaces between the conductive base and the adhesive layer, and between the adhesive layer and the insulating base, thereby reducing the risk of arcing due to electric field concentration.
[0022] The dielectric constant of the adhesive layer is closer to that of the conductive base. The interface between the conductive base and the adhesive layer, as well as the interface between the adhesive layer and the insulating base, is less prone to charge accumulation. The possibility of charge accumulation is reduced, which helps to reduce electric field distortion caused by charge accumulation, thereby reducing the risk of arcing caused by charge accumulation.
[0023] Under the same electric field strength, the stress generated between the adhesive layer and the conductive base with similar dielectric constants is smaller. Reducing the stress can help reduce the risk of arcing.
[0024] In some embodiments, the dielectric constant of the adhesive layer is greater than the dielectric constant of the conductive base.
[0025] In other embodiments, the dielectric constant of the adhesive layer is less than that of the conductive base.
[0026] In one embodiment, an insulating base has a first groove on its surface away from the metal machine base, and at least a portion of the conductive base is accommodated in the first groove; an adhesive layer is accommodated in the gap between the conductive base and the first groove.
[0027] On the one hand, it ensures a tight connection between the conductive base and the insulating base, preventing arcing between the power supply device and the metal machine. On the other hand, it reduces the size and space occupied by the semiconductor manufacturing equipment in the thickness direction of the insulating base, further improving the vibration performance and other properties of the semiconductor manufacturing equipment.
[0028] During installation, the conductive base can be placed in the first groove first, and then the adhesive used to bond the conductive base and the insulating base can be filled into the gap between the conductive base and the first groove. After the adhesive cures, an adhesive layer is formed.
[0029] In one embodiment, the adhesive layer includes an epoxy resin layer.
[0030] For example, the adhesive layer can be an epoxy resin layer formed by curing epoxy resin.
[0031] Epoxy resin has a stable dielectric constant, good insulation properties, good dimensional stability, and good high-temperature resistance, enabling it to be used in high-temperature environments. Therefore, by using an epoxy resin layer to bond the conductive base and the insulating base, high-voltage arcing between the power supply device and the metal machine tool can be prevented, effectively reducing the withstand voltage of the electrostatic chuck under bias voltage, and improving the safety and reliability of the electrostatic chuck.
[0032] In one embodiment, the insulating base includes at least one of a ceramic substrate or a polyetheretherketone substrate.
[0033] For example, in some embodiments, the insulating base includes a ceramic substrate, which has good insulation stability, good high temperature resistance, low cost, and wide applicability.
[0034] For example, in some embodiments, the insulating base includes a poly(ether-ether-ketone) (PEEK) substrate, which has good insulation stability, good high temperature resistance, and a wide range of applications.
[0035] In one embodiment, the power supply device further includes a power supply cable, one end of which is used for electrical connection to an external power source, and the other end is provided with a cable connector. A second groove is provided on the conductive base, and the cable connector is accommodated in the second groove.
[0036] Current from the external power supply is transmitted to the power supply interface, and then through the power supply cable to the conductive base, and finally to the interface connection part. The interface connection part is electrically connected to the electrode interface of the electrostatic chuck for supplying power to the electrostatic chuck.
[0037] Since the cable connector has an exposed metal conductive structure, in order to avoid the cable connector from potentially causing a sharp triple point in the electric field, the cable connector is housed in the second groove of the conductive base. This serves to shield the electric field that may be caused by the cable from the sharp shape within the second groove, thereby reducing the risk of arcing between the metal machine and the conductive cable.
[0038] In one embodiment, the opening of the second groove is parallel to the surface of the insulating base that is away from the metal machine base.
[0039] This can be understood as the first slot's opening orientation and the second slot's opening orientation being located on different surfaces of the insulating base, with the first slot's opening orientation perpendicular to the second slot's opening orientation. This avoids affecting the electrical connection between the interface connection part and the chuck interface.
[0040] In addition, it facilitates the connection of conductive bases and power cables.
[0041] In one embodiment, the routing direction of the power supply cable is parallel to the surface of the insulating base away from the metal machine base.
[0042] Compared to the method where the power supply cable routing direction is not parallel to the surface of the insulating base away from the metal machine, routing the power supply cable parallel to the surface of the insulating base away from the metal machine reduces the size of the power supply cable in the thickness direction of the insulating base, thereby reducing the space occupied by the power supply device in the thickness direction of the insulating base, which is beneficial to improving the vibration performance and other performance of semiconductor manufacturing equipment. Attached Figure Description
[0043] Figure 1 This is a schematic diagram of the structure of a semiconductor manufacturing apparatus provided in an embodiment of this application;
[0044] Figure 2 This is a partial structural diagram of a semiconductor manufacturing equipment provided in an embodiment of this application;
[0045] Figure 3 This is a schematic diagram of the structure of an electrostatic chuck provided in an embodiment of this application;
[0046] Figure 4 This is a schematic diagram of the structure of a power supply device provided in an embodiment of this application;
[0047] Figure 5 A partial cross-sectional view of a semiconductor manufacturing apparatus provided in an embodiment of this application;
[0048] Figure 6 for Figure 5 A magnified view of a portion of position A in the middle;
[0049] Figure 7 This is a partial cross-sectional view of a power supply device provided in an embodiment of this application.
[0050] Figure label:
[0051] 100 - Semiconductor manufacturing equipment; 10 - Electrostatic chuck; 101 - Electrode interface; 20 - Power supply device; 30 - Metal machine base; 301 - Mounting slot; 40 - Machine base support; 50 - Housing; 200 - Wafer; 300 - Power supply;
[0052] 1-Insulating base; 11-First surface; 111-First groove; 12-Second surface; 2-Conductive base; 21-Third surface; 211-Second groove; 3-Interface connection part; 31-First protrusion; 4-Adhesive layer; 5-Power supply cable; 51-Cable connector; 6-Power supply interface; 7-Fixing structure; 71-Through hole; 8-Locking structure; 81-Second protrusion; 9-Spring. Detailed Implementation
[0053] The technical solutions of the embodiments of this application will be described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.
[0054] In this application, unless otherwise expressly specified and limited, the terms "upper", "lower", "front", "back", "left", "right", etc., indicating orientation or positional relationship may be defined relative to the orientation of the components schematically placed in the accompanying drawings. These directional terms may be relative concepts, used for relative description and clarification, and may change accordingly depending on the orientation of the components in the accompanying drawings. They should not be construed as limitations on this application.
[0055] In this application, the terms "first," "second," etc., are used for descriptive purposes only to distinguish one element from another, and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature.
[0056] In this application, unless otherwise expressly stated and limited, "multiple" means two or more.
[0057] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linkage" should be interpreted broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances. Furthermore, when describing pipelines or channels, the terms "connection" and "linkage" as used in this application have the meaning of establishing electrical conductivity. The specific meaning needs to be understood in conjunction with the context.
[0058] Furthermore, in this application, the words "example" or "for example" are used to indicate that something is being described as an example, illustration, or illustration. Any embodiment or design that is described as "example" or "for example" in this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.
[0059] In the accompanying drawings of the embodiments of this application, solid structures such as parts and components are represented by guide lines; hollow structures such as openings, holes, spaces, and cavities are represented by guide lines with arrows.
[0060] This application provides a semiconductor manufacturing apparatus. Semiconductor manufacturing equipment refers to the equipment used in the manufacturing process of semiconductor devices. Semiconductor devices can be diodes, transistors, or integrated circuits, etc. The basic material for manufacturing semiconductor devices includes wafers, also known as silicon wafers. Wafers are made of high-purity silicon (Si) or other semiconductor materials and are typically circular in shape. Wafers undergo a series of processes such as dicing, processing, doping, and photolithography to ultimately produce semiconductor devices with specific functions.
[0061] Semiconductor manufacturing equipment may include instruments such as metrology equipment or etching machines. Metering equipment is used to precisely measure wafers to measure various parameters on the wafer, such as size, shape, and surface defects. Etching machines are used to remove material from specific areas on the wafer surface to form tiny structural patterns. The working principles and structures of metrology equipment and etching machines are well known to those skilled in the art, and will not be described in detail here.
[0062] Figure 1 This is a schematic diagram of the structure of a semiconductor manufacturing apparatus as exemplified in this application. (Refer to...) Figure 1 The semiconductor manufacturing equipment 100 includes an electrostatic chuck 10 (ESC) and a power supply unit 20. The power supply unit 20 is electrically connected to the ESC 10 and a power supply 300. Current from the power supply 300 is transmitted to the ESC 10 through the power supply unit 20 to supply power to the ESC 10. The ESC 10 is a component that uses electrostatic induction to attract and hold a wafer 200. The ESC 10 is used to electrostatically attract and hold the wafer 200 to fix it, thereby enabling processing, manufacturing, and measurement of the wafer 200.
[0063] In some scenarios, such as on a metrology machine where wafer 200 is measured under specific electrical conditions, a high bias voltage (e.g., a DC high voltage applied in a non-closed loop) is applied to the wafer 200 held by the electrostatic chuck 10 to simulate or create the required electrical environment, thereby ensuring the process compatibility and accuracy of the wafer 200 measurement results. When applying the high bias voltage to the wafer 200 held by the electrostatic chuck 10, the power supply device 20 needs to supply power to the electrostatic chuck 10, for example, to the electrodes and ground pin of the electrostatic chuck 10, to achieve the high bias voltage.
[0064] Reference Figure 1 The semiconductor manufacturing equipment 100 includes a metal table 30 and a table support 40, with the metal table 30 mounted on the table support 40. A power supply device 20 is disposed on the metal table 30, and an electrostatic chuck 10 is located on the side of the power supply device 20 opposite to the metal chuck.
[0065] In some embodiments, refer to Figure 1 The semiconductor manufacturing equipment 100 also includes a housing 50, within which are housed an electrostatic chuck 10, a power supply device 20, and a metal workbench 30. The housing 50 protects the electrostatic chuck 10, the power supply device 20, and the metal workbench 30, preventing external impurities from entering the equipment and damaging the electrostatic chuck 10, the wafer 200, and the power supply device 20. Furthermore, the housing 50 provides protection for operators, for example, preventing debris and other contaminants from flying onto the outside of the equipment and injuring them.
[0066] exist Figure 1 In the illustrated embodiment, the power supply 300 is located outside the semiconductor manufacturing equipment 100. In other embodiments, the power supply 300 may also be located inside the semiconductor manufacturing equipment 100, and this application does not impose any particular limitation on this.
[0067] Figure 2 This is a partial structural schematic diagram of a semiconductor manufacturing apparatus as exemplified in this application. (Refer to...) Figure 2 The electrostatic chuck 10, power supply device 20, and metal platform 30 are arranged sequentially along the Z-direction. The side of the electrostatic chuck 10 facing away from the power supply device 20 is used for electrostatic adsorption of the wafer 200.
[0068] Reference Figure 1 and Figure 2 The power supply device 20 includes a power supply interface 6. The power supply interface 6 is connected to the power supply 300 via a cable, and the current from the power supply 300 is transmitted to the power supply interface 6 via the cable.
[0069] Figure 3 This is a schematic diagram of the structure of an electrostatic chuck as exemplified in this application. (Refer to...) Figure 3 The electrostatic chuck 10 includes an electrode interface 101, with the electrode interface 101 and the wafer 200 located on opposite sides of the electrostatic chuck 10. A motor structure is used to electrically connect to a power supply device 20 to transmit the current provided by the power supply device 20 into the interior of the electrostatic chuck 10, thereby facilitating the electrostatic adsorption of the wafer 200 by the electrostatic chuck 10.
[0070] Figure 4 This is a schematic diagram of the structure of a power supply device according to an example of this application, with reference to... Figure 4 The power supply device 20 includes an insulating base 1, a conductive base 2, an interface connection part 3, a power supply interface 6, and a power supply cable 5. The insulating base 1 is disposed on the metal machine base 30. The surface of the insulating base 1 facing away from the metal machine base 30 is the first surface 11. The conductive base 2 and the interface connection part 3 are disposed on the first surface 11.
[0071] One end of the power supply cable 5 is connected to the power supply interface 6, and the other end is connected to the conductive base 2. The conductive base 2 is electrically connected to the interface connection part 3. The current transmitted to the power supply interface 6 can be transmitted to the conductive base 2 through the power supply cable 5, and then to the interface connection part 3. The interface connection part 3 is used to connect with... Figure 3 The electrode interface 101 of the electrostatic chuck 10 shown is electrically connected, and the current transmitted to the interface connection part 3 can be transmitted to the electrostatic chuck 10 through the electrode interface 101.
[0072] Reference Figure 4The routing direction of the power supply cable 5 is parallel to the first surface 11. Compared to the method where the routing direction of the power supply cable 5 is not parallel to the first surface 11, routing the power supply cable 5 parallel to the first surface 11 can reduce the size of the power supply cable 5 in the Z direction, thereby reducing the space occupied by the power supply device 20 in the Z direction, which is beneficial to improving the vibration performance and other performance of the semiconductor manufacturing equipment 100.
[0073] The power supply device 20 also includes a cable fixing structure 7, which includes a through hole 71 through which the power supply cable 5 passes. The cable fixing structure 7 can fix the power supply cable 5, preventing safety hazards caused by loosening of the connection between the power supply cable 5 and the conductive base 2, and between the power supply base and the power supply interface 6.
[0074] The number of fixed-line structures 7 can be selectively designed according to actual needs. For example, in some embodiments, each power supply cable 5 is provided with at least one fixed-line structure 7. When each power supply cable 5 is provided with multiple fixed-line structures 7, the fixed-line structures 7 are spaced apart along the routing direction of the power supply cable 5.
[0075] For example, in some embodiments, a wiring structure 7 is provided with through holes 71 for multiple power supply cables 5 to reduce the number of parts and optimize space utilization.
[0076] Figure 5 This is a partial cross-sectional view of a semiconductor manufacturing apparatus as exemplified in this application. Figure 6 It shows Figure 5 A magnified view of a portion of position A in the middle.
[0077] Reference Figure 5 The surface of the metal machine base 30 facing the electrostatic chuck 10 ( Figure 5 The B-side shown has a mounting groove 301. The insulating base 1 is housed in the mounting groove 301 to further reduce the size and space occupied by the semiconductor manufacturing equipment 100 in the Z-direction, and to further improve the vibration performance and other properties of the semiconductor manufacturing equipment 100.
[0078] In some embodiments, the B-side of the metal stage 30 is flush with the first surface 11 of the insulating base 1. This can be understood as the insulating base 1 being completely housed within the mounting groove 301 to fully utilize the Z-direction space of the metal stage 30, ensuring that the Z-direction dimension of the metal stage 30 after installing the insulating base 1 is the same as the Z-direction dimension of the metal stage 30 without the insulating base 1, thereby improving the space utilization of the semiconductor manufacturing equipment 100.
[0079] Because the Z-axis dimension between the electrostatic chuck 10 and the insulating base 1 is limited, an insulating rubber sheet is wrapped around the power supply cable 5 to ensure insulation between the power supply cable 5 and the electrostatic chuck 10. The insulating rubber sheet can be made of various materials, such as polyethylene or polyvinyl chloride. This application does not impose any special restrictions on the specific material of the insulating rubber sheet, and those skilled in the art can choose according to actual needs.
[0080] The electrostatic chuck 10 electrostatically adsorbs the wafer 200, and there is a gap between the electrostatic chuck 10 and the wafer 200. During the process of applying a high bias voltage to the wafer 200, if the electrode interface 101 of the electrostatic chuck 10 is not directly grounded or electrically connected to the wafer 200, when the high voltage electric field on the wafer 200 induces a charge, the charge cannot quickly flow back to the ground or dissipate. Therefore, a floating high potential will be formed at the electrode interface 101 of the electrostatic chuck 10.
[0081] Furthermore, due to the requirements of mechanical vibration in semiconductor manufacturing equipment, the equipment has a compact structure and small size in the Z-axis direction, occupying less space. This results in a small spacing between the high and low voltage structures on the power supply lines of the electrostatic chuck 10 within the limited Z-axis space. Therefore, during the process of applying a high bias voltage to the wafer 200, arcing (a discharge phenomenon caused by a high electric field strength) can easily occur between the high and low voltage structures on the power supply lines of the electrostatic chuck 10, such as between the power supply device 20 and the metal platform 30. This causes the electrodes of the electrostatic chuck 10 to change from an induced floating high potential to a low potential, while the wafer 200 is at a high bias voltage potential. This results in an excessively large potential on both sides of the dielectric layer in the Z-axis between the electrostatic chuck 10 and the wafer 200, which may even lead to dielectric layer breakdown and damage to the electrostatic chuck 10.
[0082] To resolve the arcing issue between the power supply unit 20 and the metal machine base 30, refer to... Figure 6 The conductive base 2 is located on the side of the insulating base 1 facing away from the metal machine base 30. The conductive base 2 is bonded to the insulating base 1 by the adhesive layer 4.
[0083] Since the insulating base 1 is mounted on the metal platform 30, and the conductive base 2 is bonded to the insulating base 1 via the adhesive layer 4, the conductive base 2 and the insulating base 1 can be connected more tightly, reducing the gaps between the conductive base 2 and the insulating base 1 (the gaps contain gas or other media). This reduces the sharp points formed by the gaps between the conductive base 2 and the insulating base 1 (at the sharp point, electric field, charge distribution, and discharge phenomena converge, referred to as the sharp triple point). In high-voltage, high-potential scenarios, the sharp triple point has a large curvature, dense electric field lines, and a large potential gradient, which can cause some of the gas at the sharp triple point to break down and discharge, leading to arcing. Therefore, reducing the number of sharp points prevents the sharp points from breaking down the insulating base 1, thus preventing arcing between the conductive base 2 and the metal platform 30, and further preventing the dielectric layer between the electrostatic chuck 10 and the wafer 200 from being broken down and damaging the electrostatic chuck 10. Therefore, the technical solution of this application can prevent arcing between the power supply device 20 and the metal machine base 30, thereby preventing damage to the electrostatic chuck 10, reducing the withstand voltage performance of the electrostatic chuck 10 under high voltage load, and improving the safety and reliability of the electrostatic chuck 10.
[0084] In some embodiments, the absolute value of the difference between the dielectric constant of the insulating base 1 and the dielectric constant of the adhesive layer 4 is less than the absolute value of the difference between the dielectric constant of the insulating base 1 and the dielectric constant of the conductive base 2.
[0085] This can be understood as the dielectric constant of the adhesive layer 4 being closer to that of the insulating base 1 than that of the conductive base 2.
[0086] By making the dielectric constant of adhesive layer 4 closer to that of insulating base 1, the electric field distribution at the interfaces between conductive base 2 and adhesive layer 4, and between adhesive layer 4 and insulating base 1, is smoother, preventing sharp three-phase point gaps with excessively large dielectric constant differences. The smooth transition of the electric field distribution means that the electric field intensity is more uniform throughout the structure, reducing the possibility of arcing caused by excessively high local electric fields. Therefore, the smooth electric field distribution helps reduce abrupt changes in the electric field at the interfaces between conductive base 2 and adhesive layer 4, and between adhesive layer 4 and insulating base 1, thereby reducing the risk of arcing due to electric field concentration.
[0087] The dielectric constant of the adhesive layer 4 is closer to that of the insulating base 1. The interface between the conductive base 2 and the adhesive layer 4, as well as the interface between the adhesive layer 4 and the insulating base 1, is less prone to charge accumulation. The possibility of charge accumulation is reduced, which helps to reduce electric field distortion caused by charge accumulation, thereby reducing the risk of arcing caused by charge accumulation.
[0088] In addition, the dielectric constant of the adhesive layer 4 is closer to that of the insulating base 1, which increases the strength of the insulation structure between the metal base 30 and the conductive base 2, thereby preventing or delaying the current flow and reducing the risk of arcing between the metal base 30 and the conductive base 2.
[0089] Under the same electric field strength, the adhesive layer 4 and the insulating base 1, with similar dielectric constants, are more likely to work together to resist the destructive effects of the electric field. Furthermore, the stress generated between the adhesive layer 4 and the insulating base 1, with their similar dielectric constants, is smaller; reducing stress can help reduce the risk of arcing.
[0090] In some embodiments, the dielectric constant of the adhesive layer 4 is less than that of the insulating base 1, and the ratio of the dielectric constant of the insulating base 1 to that of the adhesive layer 4 is ≤10:1. This limits the difference between the dielectric constants of the insulating component and the adhesive layer 4, further resulting in a more uniform electric field distribution at the interfaces between the conductive base 2 and the adhesive layer 4, and between the adhesive layer 4 and the insulating base 1. This further reduces charge accumulation and stress differences, and further increases the strength of the insulation structure between the metal base 30 and the conductive base 2, thereby further reducing the risk of arcing.
[0091] The ratio of the dielectric constant of the insulating base 1 to the dielectric constant of the adhesive layer 4 can be varied, for example, 2:1, 3:1, 4:1, 5:1, 6:1, 7:1, 8:1, 9:1 or 10:1. Those skilled in the art can selectively design this ratio according to actual needs.
[0092] In other embodiments, the dielectric constant of the adhesive layer 4 is greater than that of the insulating base 1, and the ratio of the dielectric constant of the adhesive layer 4 to that of the insulating base 1 is ≤10:1. This limits the difference between the dielectric constant of the insulating component and the dielectric constant of the adhesive layer 4, further resulting in a more uniform electric field distribution at the interfaces between the conductive base 2 and the adhesive layer 4, and between the adhesive layer 4 and the insulating base 1. This further reduces charge accumulation and stress differences, and further increases the strength of the insulation structure between the metal base 30 and the conductive base 2, thereby further reducing the risk of arcing.
[0093] The ratio of the dielectric constant of the adhesive layer 4 to that of the insulating base 1 can be varied, for example, 2:1, 3:1, 4:1, 5:1, 6:1, 7:1, 8:1, 9:1, or 10:1. Those skilled in the art can selectively design such a ratio according to actual needs.
[0094] In this embodiment, the adhesive layer 4 can be made of any suitable material. For example, in some embodiments, the adhesive layer 4 can be an epoxy resin layer formed by curing epoxy resin. In other embodiments, the adhesive layer 4 can also be made of other materials. This application does not impose special restrictions on the specific material of the adhesive layer 4, and those skilled in the art can selectively design it according to actual needs.
[0095] In this embodiment, the insulating base 1 comprises at least one of a ceramic substrate or a polyetheretherketone (PEEK) substrate. For example, in some embodiments, the insulating base 1 comprises a ceramic substrate, which has good insulation stability, good high-temperature resistance, low cost, and wide applicability. As another example, in some embodiments, the insulating base 1 comprises a polyetheretherketone (PEEK) substrate, which has good insulation stability, good high-temperature resistance, and wide applicability. This application does not impose special limitations on the specific material of the insulating base 1; those skilled in the art can selectively design it according to actual needs.
[0096] In other embodiments, the absolute value of the difference between the dielectric constant of the conductive base 2 and the dielectric constant of the adhesive layer 4 is less than the absolute value of the difference between the dielectric constant of the insulating base 1 and the dielectric constant of the conductive base 2.
[0097] This can be understood as the dielectric constant of the adhesive layer 4 being closer to that of the conductive base 2 than that of the insulating base 1.
[0098] By making the dielectric constant of adhesive layer 4 closer to that of conductive base 2, the electric field distribution at the interfaces between conductive base 2 and adhesive layer 4, and between adhesive layer 4 and insulating base 1, is smoother, preventing three-phase point gaps with excessively large dielectric constant differences. The smooth transition of the electric field distribution means that the electric field intensity is more uniform throughout the structure, reducing the possibility of arcing caused by excessively high local electric fields. Therefore, the smooth electric field distribution helps reduce abrupt changes in the electric field at the interfaces between conductive base 2 and adhesive layer 4, and between adhesive layer 4 and insulating base 1, thereby reducing the risk of arcing due to electric field concentration.
[0099] In addition, the dielectric constant of the adhesive layer 4 is closer to that of the conductive base 2. The interface between the conductive base 2 and the adhesive layer 4, as well as the interface between the adhesive layer 4 and the insulating base 1, is less prone to charge accumulation. The possibility of charge accumulation is reduced, which helps to reduce electric field distortion caused by charge accumulation, thereby reducing the risk of arcing caused by charge accumulation.
[0100] Furthermore, under the same electric field strength, the stress generated between the adhesive layer 4 and the conductive base 2, which have similar dielectric constants, is smaller. Reducing the stress can help reduce the risk of arcing.
[0101] In some embodiments, the dielectric constant of the adhesive layer 4 is less than that of the conductive base 2. In other embodiments, the dielectric constant of the adhesive layer 4 is greater than that of the conductive base 2. Those skilled in the art can design it selectively according to actual needs.
[0102] exist Figure 5 In the example embodiment, the distance between the outer wall of the conductive base 2 and the metal base 30 should meet the safe creepage distance (the phenomenon of an electric arc generated between a live metal part and an insulating material creeping along the outer skin) to ensure sufficient breakdown distance.
[0103] Reference Figure 6 A first groove 111 is provided on the first surface 11 of the insulating base 1, and at least a portion of the conductive base 2 is accommodated in the first groove 111. The adhesive layer 4 is accommodated in the gap between the conductive base 2 and the first groove 111.
[0104] On the one hand, it can ensure a tight connection between the conductive base 2 and the insulating base 1, preventing arcing between the power supply device 20 and the metal platform 30. On the other hand, it can reduce the size and space occupied by the semiconductor manufacturing equipment 100 in the Z direction, and further improve the vibration performance and other properties of the semiconductor manufacturing equipment 100.
[0105] During installation, the conductive base 2 can be placed in the first groove 111 first, and then the adhesive used to bond the conductive base 2 and the insulating base 1 can be filled into the gap between the conductive base 2 and the first groove 111. After the adhesive cures, an adhesive layer 4 is formed.
[0106] exist Figure 6 In the example embodiment, the electrode interface 101 of the electrostatic chuck 10 and the conductive base 2 facing the electrode interface 101 may have an uneven geometry. In order to make the electric field mode between the electrode interface 101 and the conductive base 2 of the electrostatic chuck 10 as small as possible, the distance between the electrode interface 101 and the conductive base 2 of the electrostatic chuck 10 should meet the safe creepage distance (the phenomenon of electric arc generated between the charged metal part and the insulating material creeping along the outer skin) to ensure sufficient breakdown distance.
[0107] Figure 7 This is a partial sectional view of a power supply device exemplified in this application. (Refer to...) Figure 5 and Figure 7 The conductive base 2 includes a third surface 21 facing the power supply interface 6, and a second groove 211 is provided on the third surface 21. The cable connector 51 is accommodated in the second groove 211.
[0108] Since the cable connector 51 has an exposed metal conductive structure, in order to prevent the cable connector 51 from potentially causing a sharp triple point in the electric field, the cable connector 51 is housed in the second groove 211 of the conductive base 2. This serves to shield the electric field that may appear in the cable from the sharp shape within the second groove 211, thereby reducing the risk of arcing between the metal base 30 and the conductive cable.
[0109] Reference Figure 6 and Figure 7 The second slot 211 and the cable connector 51 can take many forms. For example, in some embodiments, the cable connector 51 can be a cable spring. The second slot 211 is adapted to the size of the cable spring. When the cable spring is installed, it can deform under the squeezing force of the second slot 211 so that it can be inserted into the second slot 211. After insertion, the outer wall of the cable spring can abut against the inner wall of the second slot 211, thereby fixing the cable connector 51 in the second slot 211, preventing the cable connector 51 from loosening in the second slot 211, and ensuring the stability and reliability of the circuit.
[0110] For example, in some embodiments, the cable connector 51 can be a cylindrical cable terminal, which is inserted into the second slot 211. This application does not impose specific limitations on the specific form of the cable connector 51 and the second slot 211, and those skilled in the art can selectively design them according to actual needs.
[0111] Reference Figure 7 The opening of the second slot 211 is parallel to the surface of the insulating base 1 facing away from the metal machine base 30. This can be understood as the openings of the first slot 111 and the second slot 211 being located on different surfaces of the insulating base 1, with the opening of the first slot 111 perpendicular to the opening of the second slot 211. This avoids affecting the electrical connection between the interface connection part 3 and the chuck interface. Additionally, it facilitates the connection between the conductive base 2 and the power supply cable 5.
[0112] Reference Figure 7 One end of the interface connection part 3 protrudes from the third surface 21 for electrically connecting to the electrode interface, and the other end is located in the second groove 211 for electrically connecting to the conductive base 2. A spring 9 is provided between the end of the interface connection part 3 that extends into the second groove 211 and the bottom wall of the second groove 211. A first protrusion 31 is provided on the outer peripheral surface of the interface connection part 3. The two ends of the spring 9 abut against the surface of the protrusion plate facing away from the third surface 21 and the bottom wall of the second groove 211, respectively. A locking structure 8 is installed in the second groove 211. The locking structure 8 includes a through hole through which the interface connection part 3 passes. A second protrusion 81 is provided on the inner wall of the through hole. The second protrusion 81 abuts against the surface of the first protrusion 31 facing the third surface 21 to press the interface connection part 3 tightly into the second groove 211.
[0113] When the interface connection part 3 abuts against the electrode interface 101, the first protrusion 31 separates from the second protrusion 81, and the first protrusion 31 moves away from the third surface 21 to compress the spring 9, thereby achieving conductivity between the interface connection part 3 and the electrode interface 101 and ensuring the reliability of the connection between the interface connection part 3 and the electrode interface 101. When the interface connection part 3 and the electrode interface 101 separate, the first protrusion 31 abuts against the second protrusion 81, and the first protrusion 31 moves towards the third surface 21. Under the action of its own elastic force, the spring 9 moves towards the third surface 21, thereby achieving disconnection between the interface connection part 3 and the electrode interface 101.
[0114] exist Figure 7 In the example embodiment, the insulating base 1 includes a second surface 12 disposed opposite to the first surface 11. The distance between the bottom wall of the second groove 211 and the second surface 12 should meet the safe creepage distance (the phenomenon of an electric arc generated between a live metal part and an insulating material creeping along the outer skin) to ensure sufficient breakdown distance.
[0115] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A semiconductor manufacturing apparatus, characterized in that, It includes a metal machine base, an electrostatic chuck, and a power supply device. The electrostatic chuck includes an electrode interface, and the power supply device includes: An insulating base is provided on the metal machine base; A conductive base is disposed on the side of the insulating base away from the metal machine base; An interface connection portion is provided on the side of the conductive base away from the insulating base, and the interface connection portion electrically connects the electrode interface and the conductive base; An adhesive layer is used to bond the conductive base to the insulating base.
2. The semiconductor manufacturing equipment according to claim 1, characterized in that, The absolute value of the difference between the dielectric constant of the insulating base and the dielectric constant of the adhesive layer is less than the absolute value of the difference between the dielectric constant of the insulating base and the dielectric constant of the conductive base.
3. The semiconductor manufacturing equipment according to claim 1 or 2, characterized in that, The ratio of the dielectric constant of the insulating base to the dielectric constant of the adhesive layer is ≤10:1, or the ratio of the dielectric constant of the adhesive layer to the dielectric constant of the insulating base is ≤10:
1.
4. The semiconductor manufacturing equipment according to claim 1, characterized in that, The absolute value of the difference between the dielectric constant of the conductive base and the dielectric constant of the adhesive layer is less than the absolute value of the difference between the dielectric constant of the insulating base and the dielectric constant of the conductive base.
5. The semiconductor manufacturing equipment according to any one of claims 1-4, characterized in that, The insulating base has a first groove on its surface away from the metal machine base, and at least a portion of the conductive base is accommodated in the first groove. The adhesive layer is housed in the gap between the conductive base and the first groove.
6. The semiconductor manufacturing equipment according to any one of claims 1-5, characterized in that, The adhesive layer includes an epoxy resin layer.
7. The semiconductor manufacturing equipment according to any one of claims 1-6, characterized in that, The insulating base includes at least one of a ceramic base or a polyetheretherketone base.
8. The semiconductor manufacturing equipment according to any one of claims 1-7, characterized in that, The power supply device also includes: A power supply cable, one end of which is used for electrical connection to an external power source, and the other end of which is provided with a cable connector; The conductive base is provided with a second groove, and the cable connector is accommodated in the second groove.
9. The semiconductor manufacturing equipment according to claim 8, characterized in that, The opening of the second groove is parallel to the surface of the insulating base that is away from the metal machine base.
10. The semiconductor manufacturing equipment according to claim 8 or 9, characterized in that, The routing direction of the power supply cable is parallel to the surface of the insulating base that is away from the metal machine base.