Semiconductor process apparatus, semiconductor host apparatus, operation method, semiconductor process cluster system, and computer-readable storage medium

Abstract

This application provides a semiconductor process equipment, a semiconductor host equipment, an operating method, a semiconductor process cluster system, and a computer-readable storage medium. The controller in the semiconductor process equipment acquires the temperature control curve of an electrostatic chuck and controls the temperature control components in the dielectric adsorption layer of the electrostatic chuck based on the temperature control components, thereby adjusting the temperature of each temperature control zone of the electrostatic chuck, and consequently adjusting the temperature of each region of the wafer carried and fixed on the electrostatic chuck. The controller uses the temperature control curve as a reference to control the temperature control components of each temperature control zone to perform different degrees of heating, ensuring consistent temperature changes across all temperature control zones. This effectively suppresses temperature non-uniformity in each temperature control zone of the electrostatic chuck caused by uneven thermal field in the process chamber, uneven gas flow field, or uneven exothermic reaction in the process, improving the temperature uniformity of the wafer surface, reducing regional deviations in process results due to temperature differences, and improving wafer processing yield.

Description

Technical Field

[0001] This application relates to the field of semiconductors, and more particularly to a semiconductor process apparatus, a semiconductor mainframe apparatus, an operating method, a semiconductor process cluster system, and a computer-readable storage medium. Background Technology

[0002] Electrostatic chucks (ESCs) generate uniform adsorption force through high-voltage electrostatics, enabling them to stably grip conductors, semiconductors, and insulators in atmospheric or vacuum environments. Compared to traditional mechanical clamping, electrostatic chucks can avoid damage to the gripped objects.

[0003] In semiconductor processes (etching, thin film deposition, etc.), electrostatic chucks serve as platforms to support and fix wafers. Their temperature uniformity directly affects the temperature uniformity of the wafer surface. Since the chemical reaction rate in semiconductor processes is usually directly related to temperature, even a small temperature difference on the wafer surface can lead to regional deviations in the process results, thereby affecting the yield of semiconductor processes for wafer processing. Summary of the Invention

[0004] This application provides a semiconductor process equipment, a semiconductor host equipment, an operating method, a semiconductor process cluster system, and a computer-readable storage medium for improving the temperature uniformity of an electrostatic chuck.

[0005] To achieve the above objectives, the embodiments of this application adopt the following technical solutions: Firstly, a semiconductor process apparatus is provided. This apparatus includes a process module for performing semiconductor process steps on a wafer. The process module includes a process chamber and an electrostatic chuck, the electrostatic chuck being disposed within the process chamber and used to support and fix the wafer. The electrostatic chuck includes a substrate layer and a dielectric adsorption layer, with a temperature control component integrated in the dielectric adsorption layer. The apparatus also includes a controller coupled to the electrostatic chuck, configured to acquire a temperature control curve of the electrostatic chuck. The temperature control curve is determined by multiple temperature change curves, which represent the temperature changes of multiple temperature-controlled regions of the electrostatic chuck during the semiconductor process when the temperature control component is not activated. The temperature value of the temperature control curve at any given time is greater than the temperature value of any curve among the multiple temperature change curves at any given time. During the semiconductor process, the temperature control component is controlled according to the temperature control curve to control the temperature of the multiple temperature-controlled regions, ensuring that the temperature changes of the multiple temperature-controlled regions are consistent with the temperature control curve.

[0006] In this embodiment, the controller acquires the temperature control curve of the electrostatic chuck and controls the temperature control component in the dielectric adsorption layer of the electrostatic chuck based on the temperature control component, thereby adjusting the temperature of each temperature control area of ​​the electrostatic chuck, and thus adjusting the temperature of each area of ​​the wafer carried and fixed on the electrostatic chuck. Since the temperature value of the temperature control curve at any time is greater than the temperature value of any curve among multiple temperature change curves at any time, the multiple temperature change curves can characterize the natural temperature rise of each temperature control area on the electrostatic chuck due to environmental factors, radiation, reaction exothermics, etc., during process processes where the temperature control component is not activated. Therefore, even if there are temperature differences in each temperature control zone after the process starts, the controller can use the temperature control curve as a reference to control the temperature control components in each temperature control zone to heat to different degrees, so that the temperature changes in each temperature control zone tend to be consistent. This effectively suppresses the temperature non-uniformity of each temperature control zone of the electrostatic chuck caused by uneven thermal field, uneven gas flow field or uneven exothermic reaction in the process chamber. In other words, improving the temperature uniformity of the electrostatic chuck can improve the temperature uniformity of the wafer surface, reduce the regional deviation of the process results due to temperature differences, and improve the yield of wafer processing.

[0007] In some possible implementations, the controller is further configured to: acquire multiple temperature change curves corresponding to multiple temperature control zones of the electrostatic chuck during the semiconductor process, when the temperature control component is not enabled. The controller then sends these multiple temperature change curves to a semiconductor host device that communicates with it, which determines a temperature control curve based on these curves. This embodiment of the application transfers the task of determining the temperature control curve to the semiconductor host device, thereby reducing the computational power requirements and algorithm complexity of the controller in the semiconductor process equipment. Furthermore, the semiconductor host device can collect data from multiple semiconductor process equipments to calculate a temperature control curve applicable to multiple semiconductor process equipments, thus ensuring process consistency across multiple semiconductor process equipments and improving mass production yield.

[0008] In some possible implementations, the temperature control component includes a heating device for heating multiple temperature-controlled areas, a cooling device for cooling multiple temperature-controlled areas, or a heating-cooling device for heating or cooling multiple temperature-controlled areas. In the embodiments of this application, the temperature control component can not only compensate for insufficiently heated temperature-controlled areas through heating, but also suppress excessively rapid temperature rise in temperature-controlled areas through cooling (or integrated heating and cooling), thereby enabling more flexible temperature regulation to cope with more complex process scenarios and further improving the temperature uniformity of the electrostatic chuck.

[0009] In some possible implementations, flow channels are pre-embedded in the base layer, and the controller is also configured to control the base temperature of each temperature control zone of the electrostatic chuck by controlling the flow of cooling medium through the flow channels, the base temperature being related to the flow rate of the cooling medium.

[0010] This application's implementation uses a cooling medium introduced into the flow channel for basic temperature control, establishing a two-stage temperature control system that combines coarse adjustment (i.e., introducing cooling medium into the flow channel) and fine adjustment (i.e., controlling the temperature control components). Coarse adjustment effectively dissipates the large amount of heat generated during the process, preventing system overheating and improving the equipment's ability to handle high-power processes and its long-term operational stability. The base temperature provided by coarse adjustment can be set near the target process temperature, significantly reducing the compensation power range required by the temperature control components. The temperature control components only need to handle dynamic fluctuations and fine adjustments, thus reducing energy consumption.

[0011] In some possible implementations, multiple temperature control zones include a first temperature control zone, the temperature control component includes a first heater, and the controller is configured to: determine a temperature difference curve for the first temperature control zone based on a temperature control curve and a temperature change curve corresponding to the first temperature control zone; and determine a heating power curve for the first heater based on the temperature difference curve and a mapping relationship between the heating power and heating temperature of the first heater. During the semiconductor process, the heating power of the first heater to heat the first temperature control zone is controlled according to the heating power curve. In this embodiment, the controller can determine its own temperature difference curve based on the temperature change curve of the first temperature control zone and the temperature control curve, transforming the temperature control problem into a power output problem. The theoretically required heating power curve is calculated using the temperature difference curve and a known mapping relationship between heating power and heating temperature. This allows for the correct power to be applied in advance during the process, rather than adjusting after a temperature deviation occurs, greatly reducing the lag and error in temperature control and improving the accuracy of temperature control.

[0012] In some possible implementations, the controller is further configured to: at any point during the semiconductor process, reduce the heating power of the first heater in response to a temperature value in the first temperature control region being greater than the temperature value corresponding to the temperature control curve; or increase the heating power of the first heater in response to a temperature value in the first temperature control region being less than the temperature value corresponding to the temperature control curve. The embodiments of this application adjust the heating power of the heater based on real-time temperature deviations, thereby compensating for errors caused by inaccurate mapping between heating power and heating temperature, thermal model drift, external interference, equipment aging, or minor changes in process conditions. This maintains high control accuracy of the temperature control components over a long period, thus ensuring the temperature uniformity of the electrostatic chuck over a considerable timeframe.

[0013] In some possible implementations, the controller is further configured to adjust the heating power curve based on the amount of heating power adjustment applied to the first heater during the semiconductor process. In subsequent semiconductor processes, the heating power of the first heater for heating the first temperature-controlled region is controlled according to the adjusted heating power curve.

[0014] In a second aspect, a semiconductor host device is provided for connection to at least one semiconductor process device. The semiconductor host device includes a processor configured to: receive multiple temperature change curves acquired by the at least one semiconductor process device; determine a temperature control curve for an electrostatic chuck based on the multiple temperature change curves; wherein the temperature value of the temperature control curve at any given time is greater than the temperature value of any curve among the multiple temperature change curves at any given time; and transmit the temperature control curve to the at least one semiconductor process device.

[0015] In this embodiment, the semiconductor host device receives multiple temperature change curves from at least one semiconductor process device and determines a temperature control curve, thereby ensuring that all semiconductor process devices within a cluster follow the same temperature control curve and guaranteeing the consistency of the overall production line.

[0016] In some possible implementations, the multiple temperature change curves are temperature change curves of multiple temperature-controlled areas of the electrostatic chuck obtained by at least one semiconductor process apparatus during the semiconductor process, when the temperature control components in the electrostatic chuck are not enabled.

[0017] Thirdly, a semiconductor process cluster system is provided, comprising a semiconductor host device and semiconductor process equipment. The semiconductor host device is coupled to N semiconductor process equipment, where N is a positive integer greater than or equal to 1. Each semiconductor process equipment includes at least one process module for performing semiconductor process steps on a wafer. The process module includes a process chamber and an electrostatic chuck, the electrostatic chuck being disposed within the process chamber and used to hold and fix the wafer. The electrostatic chuck includes a substrate layer and a dielectric adsorption layer, with a temperature control component integrated in the dielectric adsorption layer. The semiconductor process equipment is configured to receive a temperature control curve from the electrostatic chuck of the semiconductor host device. The temperature control curve is determined by multiple temperature change curves, which represent the temperature changes of multiple temperature-controlled regions of the electrostatic chuck during the semiconductor process when the temperature control component is not activated. The temperature value of the temperature control curve at any given time is greater than the temperature value of any curve among the multiple temperature change curves at any given time. During the semiconductor process, the temperature control component is controlled according to the temperature control curve to control the temperature of the multiple temperature-controlled regions, ensuring that the temperature changes of the multiple temperature-controlled regions are consistent with the temperature control curve.

[0018] In this embodiment, the semiconductor host device is coupled with N semiconductor process devices, which not only enables each semiconductor process device to have high-precision zone temperature control capability, but also allows the temperature control curve of the entire cluster to be uniformly managed and optimized by the semiconductor host device, realizing a cluster production mode of distributed execution and centralized optimization of electrostatic chuck temperature control.

[0019] In some possible implementations, the semiconductor process equipment is further configured to: acquire multiple temperature change curves corresponding to multiple temperature control zones of the electrostatic chuck during the semiconductor process, when the temperature control component is not enabled; and send the multiple temperature change curves to a semiconductor host device. The semiconductor host device is configured to: determine a temperature control curve for the electrostatic chuck based on the multiple temperature change curves, wherein the temperature value of the temperature control curve at any given time is greater than the temperature value of any curve among the multiple temperature change curves at any given time; and send the temperature control curve to at least one semiconductor process device.

[0020] In some possible implementations, the temperature control component includes a heating device for heating multiple temperature control zones, a cooling device for cooling multiple temperature control zones, or a heating-cooling device for heating or cooling multiple temperature control zones.

[0021] In some possible implementations, channels are pre-embedded in the substrate layer, and the semiconductor process equipment is also configured to control the base temperature of each temperature-controlled zone of the electrostatic chuck by introducing a cooling medium into the channels, the base temperature being related to the flow rate of the cooling medium.

[0022] In some possible implementations, multiple temperature-controlled zones include a first temperature-controlled zone, and the temperature-controlled component includes a first heater. The semiconductor process equipment is further configured to: determine a temperature difference curve for the first temperature-controlled zone based on a temperature control curve and a temperature change curve corresponding to the first temperature-controlled zone; and determine a heating power curve for the first heater based on the temperature difference curve and the mapping relationship between the heating power and heating temperature of the first heater. During the semiconductor process, the heating power of the first heater for heating the first temperature-controlled zone is controlled according to the heating power curve.

[0023] In some possible implementations, the semiconductor process equipment is further configured to: at any time during the semiconductor process, reduce the heating power of the first heater in response to a temperature value in the first temperature control region being greater than a temperature value corresponding to a temperature control curve; and increase the heating power of the first heater in response to a temperature value in the first temperature control region being less than a temperature value corresponding to a temperature control curve.

[0024] In some possible implementations, the semiconductor process equipment is further configured to adjust a heating power curve based on an adjustment in the heating power of the first heater during the semiconductor process. In subsequent semiconductor processes, the heating power of the first heater for heating the first temperature-controlled region is controlled according to the adjusted heating power curve.

[0025] Fourthly, an operating method is provided, applied to semiconductor process equipment. The semiconductor process equipment includes a process module for performing semiconductor process steps on a wafer. The process module includes a process chamber and an electrostatic chuck. The electrostatic chuck is disposed within the process chamber and is used to support and fix the wafer. The electrostatic chuck includes a substrate layer and a dielectric adsorption layer, with a temperature control component integrated in the dielectric adsorption layer. The operating method includes: acquiring a temperature control curve of the electrostatic chuck, the temperature control curve being determined by multiple temperature change curves. These multiple temperature change curves represent the temperature changes of multiple temperature-controlled regions of the electrostatic chuck during the semiconductor process when the temperature control component is not activated. The temperature value of the temperature control curve at any given time is greater than the temperature value of any curve among the multiple temperature change curves at any given time. During the semiconductor process, the temperature control component is controlled according to the temperature control curve to control the temperature of the multiple temperature-controlled regions, ensuring that the temperature changes of the multiple temperature-controlled regions are consistent with the temperature control curve.

[0026] In some possible implementations, the method further includes: acquiring multiple temperature change curves corresponding to multiple temperature control zones of the electrostatic chuck during the semiconductor process, while the temperature control component is not enabled; sending the multiple temperature change curves to a semiconductor host device communicating with the controller, the semiconductor host device determining a temperature control curve based on the multiple temperature change curves.

[0027] In some possible implementations, flow channels are pre-embedded in the base layer, and the operation method further includes controlling the base temperature of each temperature control zone of the electrostatic chuck by controlling the flow of cooling medium in the flow channels, the base temperature being related to the flow rate of the cooling medium.

[0028] In some possible implementations, multiple temperature control zones include a first temperature control zone, and the temperature control component includes a first heater. The operation method includes: determining a temperature difference curve for the first temperature control zone based on a temperature control curve and a temperature change curve corresponding to the first temperature control zone; determining a heating power curve for the first heater based on the temperature difference curve and the mapping relationship between the heating power and heating temperature of the first heater; and controlling the heating power of the first heater to heat the first temperature control zone according to the heating power curve during the semiconductor process.

[0029] In some possible implementations, the operation method further includes: at any time during the semiconductor process, reducing the heating power of the first heater in response to the temperature value of the first temperature control region being greater than the temperature value corresponding to the temperature control curve; and increasing the heating power of the first heater in response to the temperature value of the first temperature control region being less than the temperature value corresponding to the temperature control curve.

[0030] In some possible implementations, the method further includes adjusting a heating power curve based on the amount of heating power adjustment applied to the first heater during the semiconductor process. In subsequent semiconductor processes, the heating power of the first heater for heating the first temperature-controlled region is controlled according to the adjusted heating power curve.

[0031] Fifthly, another operating method is also provided, applied to a semiconductor host device for connection to at least one semiconductor process device. This operating method includes: receiving multiple temperature change curves acquired by the at least one semiconductor process device; determining a temperature control curve for an electrostatic chuck based on the multiple temperature change curves; wherein the temperature value of the temperature control curve at any given time is greater than the temperature value of any curve among the multiple temperature change curves at any given time; and sending the temperature control curve to the at least one semiconductor process device.

[0032] In some possible implementations, the multiple temperature change curves are temperature change curves of multiple temperature-controlled areas of the electrostatic chuck obtained by at least one semiconductor process apparatus during the semiconductor process, when the temperature control components in the electrostatic chuck are not enabled.

[0033] In a sixth aspect, a computer-readable storage medium is provided that stores computer-executable instructions; when executed, the computer-executable instructions are able to implement the operation methods described in the fourth or fifth aspect above.

[0034] In a seventh aspect, a computer program product is provided, comprising computer-executable instructions; when executed, the computer-executable instructions are able to implement the operation methods described in the fourth or fifth aspect above.

[0035] Eighthly, an apparatus is provided, including a processor and a readable storage medium coupled to the processor, the readable storage medium storing executable instructions that, when executed by the processor, enable the operation methods described in the fourth or fifth aspect above.

[0036] A ninth aspect provides an apparatus comprising units or modules for implementing the operational methods of the fourth or fifth aspect. It should be understood that the technical effects of the fourth to ninth aspects can be referred to in conjunction with the technical effects of the first to third aspects and any of their embodiments, and will not be repeated here. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in this application, the accompanying drawings used in some embodiments of this application will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual flow of the method, the actual timing of the signals, etc. involved in the embodiments of this application.

[0038] Figure 1 This is a schematic diagram of the structure of an electrostatic chuck provided in an embodiment of this application; Figure 2 This application provides a schematic diagram of the structure of a semiconductor process cluster system. Figure 3 This is a schematic diagram of another electrostatic chuck provided in an embodiment of this application; Figure 4 This is a schematic diagram illustrating one method of dividing the temperature control area according to an embodiment of this application; Figure 5 This is a schematic diagram of multiple temperature change curves provided in an embodiment of this application when the temperature control component is not enabled; Figure 6 A schematic diagram of multiple temperature change curves provided in the embodiments of this application when the temperature control component is enabled; Figure 7 A flowchart illustrating an operation method provided in an embodiment of this application; Figure 8 A flowchart illustrating another operation method provided in an embodiment of this application; Figure 9 This is a flowchart illustrating the third operation method provided in the embodiments of this application.

[0039] Explanation of reference numerals in the attached figures: 100, electrostatic chuck; 110, dielectric adsorption layer; 111, temperature control component; 120, electrode layer; 130, substrate layer; 131, flow channel; 200, wafer; 300, semiconductor process cluster system; 310, semiconductor main equipment; 320, semiconductor process equipment; 321, process module; 322, controller. Detailed Implementation

[0040] The technical solutions in some embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments provided in this application, all other embodiments obtained by those skilled in the art are within the scope of protection of this application.

[0041] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "exemplary," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this application. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, a particular feature, structure, material, or characteristic may be included in any suitable manner in any one or more embodiments or examples.

[0042] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this application, unless otherwise stated, "a plurality of" means two or more.

[0043] Figure 1 A schematic diagram of an electrostatic chuck is shown, as follows: Figure 1 As shown, the electrostatic chuck 100 includes a dielectric adsorption layer 110, an electrode layer 120, and a substrate layer 130. The dielectric adsorption layer 110, used for direct contact with the wafer 200, needs to possess excellent insulation and abrasion resistance. In some examples, the dielectric adsorption layer 110 is made of a high-performance ceramic material (e.g., high-purity alumina or aluminum nitride). The electrode layer 120 is embedded within the dielectric layer or sandwiched between the dielectric layer and the substrate layer 130. The material of the electrode layer 120 is typically a metal; for example, molybdenum, tungsten, or conductive silver paste. In some examples, the electrode layer 120 can be unipolar, bipolar, or multipolar. When a DC high voltage is applied to the electrode layer 120, the electrostatic chuck 100 can apply a strong electrostatic force (e.g., Coulomb force or Johnson-Label force) to the wafer 200 to fix it in place. The base layer 130 serves as the supporting body and is typically made of a metal (such as aluminum alloy, stainless steel or titanium alloy) or high-performance ceramic with good thermal conductivity and mechanical strength. The base layer 130 also has built-in channels 131 for cooling medium to circulate the cooling medium and remove the large amount of heat generated during the process.

[0044] In the semiconductor field, the electrostatic chuck 100 is an indispensable core component for realizing advanced processes, and its application spans multiple key process stages. For example, in plasma processing, the electrostatic chuck 100 not only supports and fixes the wafer 200, but also serves as the lower electrode for radio frequency power, directly used to excite and maintain plasma within the process chamber. Since the electrostatic chuck 100 is in direct contact with the wafer 200 during semiconductor processing, it also plays a role in heat exchange, controlling the temperature of the wafer 200 during the semiconductor process. The temperature uniformity of the electrostatic chuck 100 directly affects the temperature uniformity of the wafer 200 surface. Since the chemical reaction rate in semiconductor processes is typically directly related to temperature, even a small temperature difference on the wafer 200 surface can lead to regional deviations in the process results, thus affecting the yield of the semiconductor process for wafer 200.

[0045] This application provides a semiconductor process cluster system for improving the temperature uniformity and consistency of all electrostatic chucks 100 within the semiconductor process cluster system. For example... Figure 2 As shown, the semiconductor process cluster system 300 includes a semiconductor host device 310 and semiconductor process equipment 320. The semiconductor host device 310 is coupled to N semiconductor process equipment 320, where N is a positive integer greater than or equal to 1. In some examples, the semiconductor host device 310 may include an industrial control computer, server, host computer, or workstation, etc. In some examples, the semiconductor process equipment 320 may include etching equipment; for example, inductively coupled plasma (ICP) or capacitively coupled plasma (CCP) ion etching equipment, and thin film deposition equipment; for example, physical vapor deposition (PVD) and chemical vapor deposition (CVD) equipment.

[0046] Please continue to refer to Figure 2Each semiconductor process equipment 320 includes a controller 322 and at least one process module 321. The controller 322 controls the process module 321 to perform semiconductor process steps on the wafer 200, such as thin film deposition, plasma etching, or ion implantation. The process module 321 includes a process chamber and an electrostatic chuck 100. The process chamber is a sealed, high-purity reaction vessel that creates and maintains the required extreme environment for a specific process. The electrostatic chuck 100 is disposed within the process chamber and is used to hold and fix the wafer 200. In the actual process, the wafer 200 is fed into the designated process chamber by the automated transport system of the semiconductor process equipment 320 and precisely placed on the electrostatic chuck 100. After activation, the electrostatic chuck 100 can fix the wafer 200 by electrostatic adsorption. Subsequently, the process chamber is sealed and evacuated, process gases are injected according to the formula, and after being excited by an energy field (e.g., radio frequency power supply), the surface of the wafer 200 can undergo the expected chemical reaction or physical change.

[0047] like Figure 3 As shown in this embodiment, a temperature control component 111 is integrated in the dielectric adsorption layer 110 of the electrostatic chuck 100, and the controller 322 is coupled to the temperature control component 111. In some embodiments, the temperature control component 111 may include a heating device (e.g., a thin-film heater or heating wire) for heating multiple temperature-controlled areas, a cooling device for cooling multiple temperature-controlled areas, or a heating-cooling device (e.g., a Peltier) for heating or cooling multiple temperature-controlled areas. In some embodiments, the controller 322 may include a microcontroller unit (MCU), a field-programmable gate array (FPGA), a digital signal processor (DSP), or an application-specific integrated circuit (ASIC) or other devices with data processing and control capabilities.

[0048] The controller 322 can acquire the temperature control curve of the electrostatic chuck 100. This temperature control curve is determined by multiple temperature change curves, which represent the temperature changes of multiple temperature-controlled areas of the electrostatic chuck 100 throughout the entire semiconductor process when the temperature control component 111 is not activated. For example, the electrostatic chuck 100 can carry a dummy wafer (e.g., a silicon wafer) to execute a complete process flow (also known as a test flow). Throughout the entire process flow, the temperature control component 111 in the electrostatic chuck 100 is not activated. Temperature sensors in each temperature-controlled area of ​​the electrostatic chuck 100 record their respective temperature change curves. The measured multiple temperature change curves characterize the natural temperature rise of each temperature-controlled area on the electrostatic chuck 100 due to environmental factors, radiation, and exothermic reactions when the temperature control component 111 is not activated. The temperature value of the temperature control curve at any given moment is greater than the temperature value of any curve among the multiple temperature change curves at that moment.

[0049] like Figure 4 As shown, in some embodiments, the electrostatic chuck 100 can be divided into temperature control areas in a concentric ring manner; for example, the electrostatic chuck 100 can be divided into four temperature control areas: a central area, an inner ring area, a middle ring area, and an outer ring area. Each temperature control zone can employ an independently embedded heater and temperature sensor; for example, the temperature control component 111 may include a first heater and a first temperature sensor, which are integrated in the dielectric adsorption layer 110 corresponding to the central zone (also referred to as temperature control zone-1); the temperature control component 111 may also include a second heater and a second temperature sensor, which are integrated in the dielectric adsorption layer 110 corresponding to the inner ring zone (also referred to as temperature control zone-2); the temperature control component 111 may also include a third heater and a third temperature sensor, which are integrated in the dielectric adsorption layer 110 corresponding to the middle ring zone (also referred to as temperature control zone-3); the temperature control component 111 may also include a fourth heater and a fourth temperature sensor, which are integrated in the dielectric adsorption layer 110 corresponding to the outer ring zone (also referred to as temperature control zone-4).

[0050] In other embodiments, the electrostatic chuck 100 may also divide the temperature control area in a grid array manner, or in a fan-shaped or fan-ring manner. It should be understood that there are various ways to divide the temperature control area of ​​the electrostatic chuck 100, and the embodiments of this application do not impose any restrictions on the specific form of temperature control area division.

[0051] Using temperature-controlled areas as Figure 4Taking the illustrated division method as an example, the first, second, third, and fourth temperature sensors can independently detect the temperature of their respective temperature control zones (i.e., achieve zoned temperature sampling). Therefore, the controller 322 can acquire multiple temperature change curves through these sensors. The above division is merely an example; other division methods can also be used to divide the temperature control zones and set corresponding temperature sensors in each zone. For instance, the temperature control zones can be divided using the aforementioned grid array, fan-shaped, or fan-ring method, and corresponding temperature sensors can be set in each zone.

[0052] Still with Figure 4 Taking the temperature control zone division method shown as an example, Figure 5 A schematic diagram of multiple temperature change curves is shown when the temperature control component 111 is not enabled; wherein, the multiple temperature change curves are the first temperature change curve T1 of temperature control region-1, the second temperature change curve T2 of temperature control region-2, the third temperature change curve T3 of temperature control region-3, and the fourth temperature change curve T4 of temperature control region-4.

[0053] like Figure 5 As shown, before the semiconductor process begins (e.g., the RF power supply is turned on), no heat is generated, and multiple temperature change curves (i.e., T1-T4) overlap. After the semiconductor process begins, plasma energy and chemical reactions generate a large amount of heat, and different temperature control areas of the electrostatic chuck 100 may experience different degrees of temperature rise, thus causing multiple temperature change curves (i.e., T1-T4) to gradually separate and temperature differences to appear.

[0054] In this embodiment, the controller 322 can independently control the first heater, the second heater, the third heater and the fourth heater according to the temperature control curve; that is, it can perform zoned temperature control for multiple temperature control zones.

[0055] In some examples, the controller 322 can process the temperature control curve and the temperature change curve corresponding to the first temperature control region, wherein the first temperature control region can refer to any temperature control region on the electrostatic chuck 100; for example, any one of the temperature control regions-1,-2,-3 and-4 mentioned above.

[0056] Taking the aforementioned temperature control region-1 as an example, the temperature change curve corresponding to temperature control region-1 is the first temperature change curve T1. For instance, the difference between the value of each point on the temperature control curve and the value of the corresponding point on the first temperature change curve T1 can be calculated to determine the temperature difference curve of the first temperature control region. Then, the controller 322 determines the heating power curve of the first heater based on the temperature difference curve and the mapping relationship between the heating power and heating temperature of the first heater. For example, if the value corresponding to the temperature difference curve at a certain moment is 1℃, the controller can control the first heater to heat at a power of 5W based on the mapping relationship between the heating power and heating temperature of the first heater. For example, if the value corresponding to the temperature difference curve at another moment is 2℃, the controller can control the first heater to heat at a power of 10W based on the mapping relationship between the heating power and heating temperature of the first heater. The mapping relationship between the heating power and heating temperature of the first heater can be pre-calibrated through prior experiments, and the curve formed by the heating power of the first heater at multiple moments can be called the heating power curve of the first heater. Finally, the controller 322 can control the heating power of the first heater to heat the first temperature control area according to the heating power curve of the first heater during the semiconductor process, so as to control the temperature change of the first temperature control area to be consistent with the temperature control curve.

[0057] In this embodiment, the controller 322 can determine its own temperature difference curve based on the temperature change curve and temperature control curve of the first temperature control zone, and transform the temperature control problem into a power output problem. By using the temperature difference curve and the known mapping relationship between heating power and heating temperature, the theoretically required heating power curve is calculated. This allows the correct power to be applied in advance during the process, rather than adjusting after a temperature deviation occurs, greatly reducing the lag and error in temperature control and improving the accuracy of temperature control.

[0058] It should be understood that for any other temperature-controlled region, the controller 322 can determine the temperature difference curve of that temperature-controlled region based on the temperature control curve and the temperature change curve of that temperature-controlled region. Then, based on the temperature difference curve and the mapping relationship between the heating power and heating temperature of the heater corresponding to that temperature-controlled region, the controller determines the heating power curve of the heater corresponding to that temperature-controlled region. Furthermore, during the semiconductor process, based on the heating power curve of the heater corresponding to that temperature-controlled region, the controller controls the heating power of the heater corresponding to that temperature-controlled region to heat that temperature-controlled region, thereby ensuring that the temperature change of that temperature-controlled region is consistent with the temperature control curve.

[0059] Furthermore, at any point during the semiconductor process, the controller 322 can also reduce the heating power of the first heater, thereby lowering the temperature of the first temperature-controlled region, in response to a temperature value in the first temperature-controlled region being greater than the temperature value corresponding to the temperature control curve. For example, at time Tn, the first heater heats the first temperature-controlled region with a power of 5W, but the temperature value of the first temperature-controlled region is greater than the temperature value corresponding to the temperature control curve. In this case, the controller can reduce the heating power of the first heater to 3W, that is, the heating power adjustment of the first heater is -2W. Alternatively, the controller 322 can also increase the heating power of the first heater, thereby increasing the temperature of the first temperature-controlled region, in response to a temperature value in the first temperature-controlled region being less than the temperature value corresponding to the temperature control curve. For example, at time Tn... n+1 At a certain moment, the first heater heats the first temperature control area with a power of 10W, but the temperature value of the first temperature control area is lower than the temperature value corresponding to the temperature control curve. At this time, the controller can increase the heating power of the first heater to 12W, that is, the heating power adjustment of the first heater is +2W.

[0060] In other words, the controller 322 can adjust the preset heating power according to the real-time temperature deviation, that is, the difference between the temperature value of the temperature control area and the temperature value corresponding to the temperature control curve. This can compensate for errors caused by inaccurate mapping relationship between heating power and heating temperature, thermal model drift, external interference, equipment aging or slight changes in process conditions, so as to maintain high control accuracy of the temperature control component 111 over a long period of time, and thus better control the temperature change of the first temperature control area to be consistent with the temperature control curve.

[0061] The heating power of the heater is related to the voltage or current applied to the heater. In some examples, the controller 322 can keep the voltage applied to the heater constant and adjust the heating power by adjusting the current applied to the heater. In other examples, the controller 322 can keep the current applied to the heater constant and adjust the heating power by adjusting the voltage applied to the heater.

[0062] In some embodiments, the controller 322 can also adjust the heating power curve of the first heater based on the adjustment amount of the heating power of the first heater during the semiconductor process; that is, the adjustment amount of the heating power adjusted according to the real-time temperature deviation, as described above. For example, if the heating power adjustment amount of the first heater is -2W at a certain moment, the controller 322 can add the heating power of the first heater at that moment (e.g., 5W) to the heating power adjustment amount, so that the heating power curve of the first heater at that moment corresponds to a heating power of 3W. Thus, in subsequent semiconductor processes, the controller 322 can control the heating power of the first heater to heat the first temperature control region according to the adjusted heating power curve.

[0063] It should be understood that the specific process for temperature control in other temperature control zones can refer to the above-described process for temperature control in the first temperature control zone, and will not be repeated here in the embodiments of this application. Therefore, even if there are temperature differences in each temperature control zone after the process begins, the controller 322 can control the temperature control components 111 in each temperature control zone to heat to different degrees based on the temperature control curve, so that the temperature change in each temperature control zone is consistent with the temperature control curve (e.g., ...). Figure 6 As shown in the figure, this effectively suppresses the temperature non-uniformity of various temperature control areas of the electrostatic chuck 100 caused by uneven thermal field, uneven gas flow field or uneven exothermic reaction in the process chamber; that is, it improves the temperature uniformity of the electrostatic chuck 100, which in turn improves the temperature uniformity of the wafer 200 surface, reduces the regional deviation of the process results due to temperature differences, and improves the yield of processing the wafer 200.

[0064] In another implementation, such as Figure 3 As shown, a flow channel 131 is pre-embedded in the base layer 130 of the electrostatic chuck 100. The controller 322 can also control the flow rate of cooling medium (e.g., liquid or gaseous nitrogen, helium, etc.) introduced into the flow channel 131 to control the base temperature of each temperature control zone of the electrostatic chuck 100. The higher the flow rate of the cooling medium, the lower the base temperature. The cooling medium can effectively dissipate the large amount of heat generated during the process, prevent the system from overheating, and improve the equipment's ability to handle high-power processes and its long-term operational stability. In some examples, the base temperature provided by introducing cooling medium into the flow channel 131 can be slightly lower than the temperature corresponding to the temperature control curve, reducing the heating power range of the temperature control component 111. The temperature control component 111 only needs to make fine adjustments to the temperature, thus reducing energy consumption.

[0065] Still with Figure 4 Taking the temperature control zone division method as an example, the controller 322 can obtain the temperature data through the first temperature sensor, the second temperature sensor, the third temperature sensor, and the fourth temperature sensor. Figure 5 The diagram shows multiple temperature change curves when the temperature control component 111 is not enabled. Exemplarily, the process of obtaining multiple temperature change curves includes: using a virtual environment to perform a semiconductor process in a process chamber, during which the heating and / or cooling functions of the temperature control component 111 are disabled to ensure that the dynamic temperature performance of the electrostatic chuck 100 comes entirely from the heat exchange between the cooling medium and the plasma in the flow channel 131. During this process, temperature sensors in each temperature control zone of the electrostatic chuck 100 record the temperature changes in each temperature control zone, thereby obtaining multiple temperature change curves.

[0066] In some embodiments, the controller 322 is communicatively connected to the semiconductor host device 310, allowing the controller 322 to send multiple temperature change curves when the temperature control component 111 is not activated. The semiconductor host device 310 then determines a temperature control curve based on these multiple temperature change curves. After the semiconductor host device 310 determines the temperature control curve, the controller 322 can also obtain the temperature control curve of the electrostatic chuck 100 from the semiconductor host device 310. This embodiment assigns the task of determining the temperature control curve to the semiconductor host device 310, thereby reducing the computational power requirements and algorithm complexity of the controller 322 in the semiconductor process equipment 320. Furthermore, the semiconductor host device 310 can collect data from multiple semiconductor process equipment 320s to calculate a temperature control curve applicable to all of them, thus ensuring process consistency across the multiple semiconductor process equipment 320s and improving mass production yield.

[0067] In some embodiments, the semiconductor host device 310 includes a processor that can receive multiple temperature change curves acquired by at least one semiconductor process device 320. The multiple temperature change curves are temperature change curves of multiple temperature control areas of the electrostatic chuck 100 acquired by at least one semiconductor process device 320 during the semiconductor process when the temperature control component 111 in the electrostatic chuck 100 is not activated.

[0068] After receiving multiple temperature change curves, the processor can determine the temperature control curve of the electrostatic chuck 100 based on these curves. The temperature value of the temperature control curve at any given time is greater than the temperature value of any other curve at any given time. In some examples, the processor can take the maximum value from the multiple temperature change curves at each time point, add a fixed safety margin to each maximum value, and perform smoothing (such as moving average or spline interpolation) to determine the temperature control curve. After determining the temperature control curve, the processor can send it to the semiconductor process equipment 320, which can then control the temperature control component 111 to heat or cool each temperature-controlled area based on the temperature control curve.

[0069] In other embodiments, the processor may also receive multiple temperature change curves acquired by all (i.e., N) semiconductor process equipment 320s, and determine the temperature control curve of the electrostatic chuck 100 based on the multiple temperature change curves. The multiple temperature change curves are temperature change curves of multiple temperature-controlled areas of the electrostatic chuck 100 acquired by all semiconductor process equipment 320s during the semiconductor process, when the temperature control component 111 in the electrostatic chuck 100 is not activated. The temperature value of the temperature control curve at any given time is greater than the temperature value of any curve among the multiple temperature change curves at any given time. The determination of the temperature control curve can be referred to the relevant description above, and will not be repeated here. After determining the temperature control curve, the processor can send the temperature control curve to the semiconductor process equipment 320, so that the semiconductor process equipment 320 can control the temperature control component 111 to heat each temperature-controlled area according to the temperature control curve.

[0070] In this embodiment, the semiconductor host device 310 receives multiple temperature change curves from at least one semiconductor process equipment 320 and determines the temperature control curve. This allows the temperature control curve of the entire semiconductor process cluster system 300 to be uniformly managed and optimized by the semiconductor host device 310, realizing a cluster production mode of distributed execution and centralized optimization of temperature control of the electrostatic chuck 100. This ensures that all semiconductor process equipment 320 within a semiconductor process cluster system 300 follows the same temperature control curve, guaranteeing the consistency of the overall production line.

[0071] This application also provides an operating method, such as... Figure 7 The operation method shown includes S110-S120, as follows: S110, the controller acquires the temperature control curve of the electrostatic chuck.

[0072] In some implementations, this method of operation can be applied to, for example... Figure 2 The semiconductor process equipment 320 includes a controller 322.

[0073] In other embodiments, this operating method can also be applied to the semiconductor host device 310; that is, the controller 322 can be disposed in the semiconductor host device 310. When the controller 322 is disposed in the semiconductor host device 310, the controller 322 can be integrated into the processor in the semiconductor host device 310; that is to say, Figure 7 The operation method shown can also be executed by the processor in the semiconductor host device 310.

[0074] In some implementations, the temperature control curve is determined by multiple temperature change curves. These multiple temperature change curves are the temperature change curves of multiple temperature control areas of the electrostatic chuck 100 during the semiconductor process when the temperature control component 111 is not activated. The temperature value of the temperature control curve at any time is greater than the temperature value of any curve among the multiple temperature change curves at any time.

[0075] When the controller 322 is located on the semiconductor process equipment 320 side, the controller 322 in the semiconductor process equipment 320 can also acquire multiple temperature change curves corresponding to multiple temperature control areas of the electrostatic chuck 100 during the semiconductor process, even when the temperature control component 111 is not enabled, and send the multiple temperature change curves to the semiconductor host equipment 310 which communicates with the controller 322. The semiconductor host equipment 310 uses the multiple temperature change curves to determine the temperature control curve and sends the temperature control curve to the controller 322 in the semiconductor process equipment 320. When the controller 322 is located on the semiconductor host equipment 310 side, the semiconductor host equipment 310 may not send the temperature control curve to the semiconductor process equipment 320 after determining the temperature control curve based on the multiple temperature change curves sent by the semiconductor process equipment 320.

[0076] S120. In the semiconductor process, the controller controls the temperature control components to control the temperature of multiple temperature control zones according to the temperature control curve.

[0077] In some embodiments, a flow channel 131 is pre-embedded in the base layer 130 of the electrostatic chuck 100. The controller 322 in the semiconductor process equipment 320 can control the base temperature of each temperature control zone of the electrostatic chuck 100 by controlling the flow of cooling medium in the flow channel 131. The base temperature is related to the flow rate of the cooling medium.

[0078] In some embodiments, multiple temperature control zones include a first temperature control zone, and the temperature control component 111 includes a first heater integrated into the dielectric adsorption layer 110 corresponding to the first temperature control zone of the electrostatic chuck 100. For example, when controlling the temperature of the first temperature control zone, the controller 322 can determine the temperature difference curve of the first temperature control zone based on the temperature control curve and the temperature change curve corresponding to the first temperature control zone. Based on the temperature difference curve and the mapping relationship between the heating power and heating temperature of the first heater, the heating power curve of the first heater is determined. During the semiconductor process, the heating power of the first heater for heating the first temperature control zone is controlled according to the heating power curve.

[0079] In addition, at any point in the semiconductor process, the controller 322 can also reduce the heating power of the first heater in response to the temperature value of the first temperature control region being greater than the temperature value corresponding to the temperature control curve; and increase the heating power of the first heater in response to the temperature value of the first temperature control region being less than the temperature value corresponding to the temperature control curve.

[0080] In some embodiments, the controller 322 can adjust the heating power curve based on the amount of heating power adjustment to the first heater during the semiconductor process. In subsequent semiconductor processes, the heating power of the first heater for heating the first temperature-controlled region is controlled according to the adjusted heating power curve.

[0081] This application also provides another operating method, which is applied to, for example... Figure 2 Semiconductor host device 310, wherein semiconductor host device 310 is used for coupling to at least one semiconductor process device 320, such as Figure 8 The operation method shown includes S210-S230, as follows: S210, The processor receives multiple temperature change curves obtained from at least one semiconductor process device.

[0082] In some embodiments, the multiple temperature change curves are temperature change curves of multiple temperature control areas of the electrostatic chuck 100 obtained by at least one semiconductor process equipment 320 during the semiconductor process when the temperature control component 111 in the electrostatic chuck 100 is not activated.

[0083] The S220 processor determines the temperature control curve of the electrostatic chuck based on multiple temperature change curves.

[0084] In some implementations, the temperature value of the temperature control curve at any given time is greater than the temperature value of any curve among the multiple temperature change curves at any given time.

[0085] S230, The processor sends a temperature control profile to at least one semiconductor process device.

[0086] This application also provides an operation method, which is applied to, for example... Figure 2 The semiconductor process cluster system 300 shown is as follows: Figure 9 The operation method shown includes S310-S340, as follows: S310. When the temperature control component is not enabled, the semiconductor process equipment acquires multiple temperature change curves corresponding to multiple temperature control zones of the electrostatic chuck during the semiconductor process; and sends the multiple temperature change curves to the semiconductor host equipment.

[0087] The S320 semiconductor host equipment determines the temperature control curve of the electrostatic chuck based on multiple temperature change curves.

[0088] S330, the semiconductor process equipment receives the temperature control profile from the electrostatic chuck of the semiconductor host equipment.

[0089] S340. In the semiconductor process, the semiconductor process equipment controls the temperature control components to control the temperature of multiple temperature control areas according to the temperature control curve.

[0090] This application also provides a computer-readable storage medium storing computer-executable instructions; when executed, the computer-executable instructions can achieve the following: Figures 7-9 Any of the operation methods.

[0091] This application also provides an apparatus including a processor and a readable storage medium coupled to the processor. The readable storage medium stores executable instructions, which, when executed by the processor, enable the implementation of... Figures 7-9 Any of the operation methods.

[0092] This application also provides an apparatus, including tools for implementing such... Figures 7-9 A unit or module of any of the operation methods.

[0093] This application provides a semiconductor process apparatus, an operating method, a semiconductor process cluster system, and a computer-readable storage medium. In the semiconductor process apparatus 320, the controller 322 acquires the temperature control curve of the electrostatic chuck 100 and controls the temperature control component 111 in the dielectric adsorption layer 110 of the electrostatic chuck 100 based on the temperature control component 111, thereby adjusting the temperature of each temperature-controlled area of ​​the electrostatic chuck 100, and consequently adjusting the temperature of each area of ​​the wafer 200 supported and fixed on the electrostatic chuck 100. Since the temperature value of the temperature control curve at any given time is greater than the temperature value of any curve among multiple temperature change curves at any given time, the multiple temperature change curves can characterize the natural temperature rise of each temperature-controlled area on the electrostatic chuck 100 due to environmental factors, radiation, and exothermic reactions during the process when the temperature control component 111 is not activated. Therefore, even if there are temperature differences in each temperature control zone after the process starts, the controller 322 can control the temperature control components 111 of each temperature control zone to heat to different degrees based on the temperature control curve, so that the temperature change of each temperature control zone is consistent. This effectively suppresses the temperature non-uniformity of each temperature control zone of the electrostatic chuck 100 caused by uneven thermal field, uneven gas flow field or uneven exothermic reaction in the process chamber. That is, it improves the temperature uniformity of the electrostatic chuck 100, which in turn improves the temperature uniformity of the wafer 200 surface, reduces the regional deviation of the process results due to temperature differences, and improves the yield of processing the wafer 200.

[0094] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the descriptions of each embodiment in the above embodiments have different focuses. For parts not described in detail in a certain embodiment, refer to the corresponding processes in the foregoing device embodiments, which will not be repeated here.

[0095] In the embodiments provided in this application, it should be understood that the disclosed semiconductor process equipment, operating methods, semiconductor host equipment, and semiconductor process cluster systems can be implemented in other ways. For example, the equipment embodiments described above are merely illustrative. For instance, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple modules or components may be combined or integrated into another device, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or modules may be electrical, mechanical, or other forms.

[0096] The modules described as separate components may or may not be physically separate. The components shown as modules may or may not be physical modules; that is, they may be located on one device or distributed across multiple devices. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs.

[0097] In addition, the functional modules in the various embodiments of this application can be integrated into one device, or each module can exist physically separately, or two or more modules can be integrated into one device.

[0098] In the above embodiments, implementation can be achieved, in whole or in part, through software, hardware, firmware, or any combination thereof. When implemented using software programs, implementation can be, in whole or in part, in the form of a computer program product.

[0099] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A semiconductor process apparatus, characterized by, The device includes an electrostatic chuck for carrying and fixing a wafer; wherein the electrostatic chuck includes a base layer and a dielectric adsorption layer, and the dielectric adsorption layer integrates a temperature control component. The semiconductor process equipment further includes a controller coupled to the electrostatic chuck, the controller being configured to: The temperature control curve of the electrostatic chuck is obtained. The temperature control curve is determined by multiple temperature change curves. The multiple temperature change curves include the temperature change curves of multiple temperature control areas of the electrostatic chuck during the semiconductor process when the temperature control component is not enabled. The temperature value of the temperature control curve at any time is greater than the temperature value of any curve among the multiple temperature change curves at any time. During the semiconductor process, the temperature control component is used to control the temperature of the multiple temperature control zones according to the temperature control curve.

2. The semiconductor process apparatus according to claim 1, wherein The controller is also configured to: With the temperature control component disabled, multiple temperature change curves corresponding to multiple temperature control zones of the electrostatic chuck during the semiconductor process are obtained. The plurality of temperature change curves are sent to a semiconductor host device that communicates with the controller to determine the temperature control curve.

3. The semiconductor process apparatus according to claim 1 or 2, characterized by, The temperature control component includes a heating device for heating the plurality of temperature control areas, a cooling device for cooling the plurality of temperature control areas, or a heating-cooling device for heating or cooling the plurality of temperature control areas.

4. The semiconductor process apparatus according to claim 1, wherein The base layer has pre-embedded flow channels, and the controller is further configured to: The base temperature of each temperature control zone of the electrostatic chuck is controlled by controlling the flow of cooling medium through the flow channel. The base temperature is related to the flow rate of the cooling medium.

5. The semiconductor process apparatus according to claim 1, wherein The plurality of temperature control zones includes a first temperature control zone, the temperature control component includes a first heater, and the controller is configured to: Based on the temperature control curve and the temperature change curve corresponding to the first temperature control region, determine the temperature difference curve of the first temperature control region; Based on the temperature difference curve and the mapping relationship between the heating power and heating temperature of the first heater, the heating power curve of the first heater is determined. The heating power of the first heater for heating the first temperature control zone is controlled according to the heating power curve.

6. The semiconductor process apparatus according to claim 5, wherein The controller is also configured to: At any point during the semiconductor process, in response to the temperature value in the first temperature control region being greater than the temperature value corresponding to the temperature control curve, the heating power of the first heater is reduced; or In response to the temperature value of the first temperature control zone being lower than the temperature value corresponding to the temperature control curve, the heating power of the first heater is increased.

7. The semiconductor process apparatus according to claim 5, wherein The controller is also configured to adjust the heating power curve according to the amount of heating power adjustment applied to the first heater during the semiconductor process; The heating power of the first heater for heating the first temperature control zone is controlled according to the adjusted heating power curve.

8. A semiconductor mainframe device, characterized in that, The semiconductor host device is used to connect to at least one semiconductor process equipment, the semiconductor host device including a processor configured to; Receive multiple temperature change curves from the at least one semiconductor process device; Based on the plurality of temperature change curves, the temperature control curve of the electrostatic chuck is determined; wherein, the temperature value of the temperature control curve at any time is greater than the temperature value of any curve among the plurality of temperature change curves at any time, and the plurality of temperature change curves include the temperature change curves of multiple temperature control areas of the electrostatic chuck when the temperature control component in the electrostatic chuck is not activated. The temperature control curve is sent to the at least one semiconductor process equipment.

9. A method for operating semiconductor process equipment, characterized in that, The operation method includes: The temperature control curve of an electrostatic chuck in a semiconductor process equipment is obtained. The temperature control curve is determined by multiple temperature change curves. The multiple temperature change curves include the temperature change curves of multiple temperature control areas of the electrostatic chuck during the semiconductor process when the temperature control component is not activated. The temperature value of the temperature control curve at any time is greater than the temperature value of any curve among the multiple temperature change curves at any time. During the semiconductor process, the temperature control component in the electrostatic chuck is controlled to control the temperature of the multiple temperature control zones according to the temperature control curve.

10. The operating method according to claim 9, characterized in that, The operation method further includes: With the temperature control component disabled, multiple temperature change curves corresponding to multiple temperature control zones of the electrostatic chuck during the semiconductor process are obtained. The plurality of temperature change curves are sent to the semiconductor host device to determine the temperature control curve.

11. The operating method according to claim 9, characterized in that, The electrostatic chuck has a flow channel embedded in its base layer, and the operation method further includes: The base temperature of each temperature control zone of the electrostatic chuck is controlled by controlling the flow of cooling medium through the flow channel. The base temperature is related to the flow rate of the cooling medium.

12. The operating method according to claim 9, characterized in that, The plurality of temperature control zones includes a first temperature control zone, the temperature control component includes a first heater, and the operation method includes: Based on the temperature control curve and the temperature change curve corresponding to the first temperature control region, determine the temperature difference curve of the first temperature control region; Based on the temperature difference curve and the mapping relationship between the heating power and heating temperature of the first heater, the heating power curve of the first heater is determined. The heating power of the first heater for heating the first temperature control zone is controlled according to the heating power curve.

13. The operating method according to claim 12, characterized in that, The operation method further includes: At any point during the semiconductor process, in response to the temperature value in the first temperature control region being greater than the temperature value corresponding to the temperature control curve, the heating power of the first heater is reduced; or In response to the temperature value of the first temperature control zone being lower than the temperature value corresponding to the temperature control curve, the heating power of the first heater is increased.

14. The operating method according to claim 12, characterized in that, The operation method further includes: adjusting the heating power curve according to the amount of heating power adjustment of the first heater during the semiconductor process; The heating power of the first heater for heating the first temperature control zone is controlled according to the adjusted heating power curve.

15. A semiconductor process cluster system, characterized in that, It includes the semiconductor process equipment as described in any one of claims 1-7, and the semiconductor host equipment as described in claim 8, wherein the semiconductor host equipment is coupled to N of the semiconductor process equipment, and N is a positive integer greater than or equal to 1.

16. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions, which, when executed, enable the operation method according to any one of claims 9-14.

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