Semiconductor device, method of controlling semiconductor device, and control program of semiconductor device

Abstract

This disclosure relates to a conductor device, a method for controlling a semiconductor device, and a control procedure for a semiconductor device. To improve the accuracy of temperature measurement in a semiconductor device, the semiconductor device includes a temperature sensor having multiple switches As, a first terminal coupled to the temperature sensor via switches As, a second terminal coupled to the temperature sensor via switches As, a third terminal coupled to the temperature sensor via switches As, and a fourth terminal coupled to the temperature sensor via switches As and supplied with a predetermined voltage VCC. The fourth terminal is capable of being coupled to the first, second, and third terminals via switches As.

Description

Cross-references to related applications

[0001] The disclosure of Japanese Patent Application No. 2025-013232, filed on January 29, 2025, including the specification, drawings and abstract, is incorporated herein by reference in its entirety. Technical Field

[0002] This disclosure relates to a semiconductor device, a control method for a semiconductor device, and a control program for a semiconductor device. Background Technology

[0003] The disclosed technologies are listed below.

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2017-198523

[0005] Patent Document 1 discloses a semiconductor device with a built-in temperature sensor. The semiconductor device in Patent Document 1 measures various voltage values ​​to adjust the offset of the temperature sensor. Summary of the Invention

[0006] The goal is to improve the accuracy of temperature measurement in semiconductor devices.

[0007] Other objects and novel features will become apparent from the description and accompanying drawings in this specification.

[0008] According to one embodiment, the semiconductor device includes a first terminal to a fourth terminal and a first temperature sensor. The first temperature sensor includes a first switching unit to a fourth switching unit and a bandgap reference circuit. The first switching unit is configured to output a reference voltage generated based on the output of the bandgap reference circuit from the first terminal, the second switching unit is configured to output a PTAT voltage generated based on the output of the bandgap reference circuit, the third switching unit is configured to be coupled between the third terminal and at least one of the first terminal and the second terminal, and the fourth switching unit is configured to output a predetermined voltage supplied to the first temperature sensor from the first terminal to the third terminal.

[0009] According to another embodiment, a method for controlling a semiconductor device includes a first terminal to a fourth terminal and a first temperature sensor. The first temperature sensor includes a bandgap reference circuit and a first switching unit to a fourth switching unit. The first switching unit is configured to output a reference voltage generated based on the output of the bandgap reference circuit from the first terminal. A second switching unit is configured to output a PTAT voltage generated based on the output of the bandgap reference circuit. A third switching unit is configured to be connected between the third terminal and either the first or second terminal. The fourth switching unit is configured to output a predetermined voltage supplied to the first temperature sensor from the first terminal to the third terminal. The method for controlling the semiconductor device includes controlling the operation of the first switching unit to the fourth switching unit by a control unit.

[0010] According to one embodiment, a control program for a semiconductor device includes a first terminal to a fourth terminal and a first temperature sensor. The first temperature sensor includes a first switching unit to a fourth switching unit and a bandgap reference circuit. The first switching unit is configured to output a reference voltage generated based on the output of the bandgap reference circuit from the first terminal. A second switching unit is configured to output a PTAT voltage generated based on the output of the bandgap reference circuit. A third switching unit is configured to be connected between the third terminal and either the first or second terminal. The fourth switching unit is configured to output a predetermined voltage supplied to the first temperature sensor from the first terminal to the third terminal. The program causes the semiconductor device to perform steps controlling the operation of the first switching unit to the fourth switching unit.

[0011] According to the embodiments, the accuracy of temperature measurement in semiconductor devices can be improved. Attached Figure Description

[0012] Figure 1 This is a diagram illustrating the configuration of a semiconductor device 101 according to a comparative example.

[0013] Figure 2 The graph illustrates the temperature characteristics of the reference voltage Vref1 and the PTAT voltage Vptat1 of the temperature sensor in the semiconductor device according to the comparative example.

[0014] Figure 3 This is a configuration diagram illustrating the state during measurement in semiconductor device 101 according to a comparative example.

[0015] Figure 4 This is a schematic configuration diagram of the semiconductor device 1 according to the first embodiment.

[0016] Figure 5 This is a diagram illustrating the configuration of a semiconductor device 1 and a test device ME for testing the semiconductor device 1 according to a first embodiment.

[0017] Figure 6 This is a schematic diagram used to explain the first test of the semiconductor device according to the first embodiment.

[0018] Figure 7 This is a flowchart illustrating the operation of a first test in a semiconductor device according to a first embodiment.

[0019] Figure 8 This is a flowchart illustrating the operation of a first test in a semiconductor device according to a first embodiment.

[0020] Figure 9 This is a flowchart illustrating the operation of a first test in a semiconductor device according to a first embodiment.

[0021] Figure 10 This is for explaining the first test of the semiconductor device according to the first embodiment. Figure 6 This is a diagram illustrating the test operations following the test operation shown.

[0022] Figure 11 The illustration shows a semiconductor device according to the first embodiment. Figures 7 to 9 The flowchart for the subsequent testing operations.

[0023] Figure 12 This is for explaining the first test of the semiconductor device according to the first embodiment. Figure 10 This is a diagram illustrating the test operations following the test operation shown.

[0024] Figure 13 The illustration shows a semiconductor device according to the first embodiment. Figure 11 The flowchart of the test operation following the test operation.

[0025] Figure 14 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 7 and 9 The test operation is shown in the diagram, which is related to the trace E1.

[0026] Figure 15 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 11 The test operation related trace E1a is shown.

[0027] Figure 16 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figures 7 to 9 The test operation related trace E1b is shown.

[0028] Figure 17 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 13 The test operation related trace E1c is shown.

[0029] Figure 18 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 11 The trace E1d related to the test operation is shown.

[0030] Figure 19 The diagram illustrates a configuration of the semiconductor device 1 according to the first embodiment, showing the trace E1e of the reference voltage and PTAT voltage output at terminals Tr and Tp by the bandgap reference circuit BGR for measuring the temperature sensor.

[0031] Figure 20The diagram illustrates the configuration of the semiconductor device 1 according to the first embodiment, showing the trace E1f for measuring the reference voltage and PTAT voltage output by the bandgap reference circuit BGR at terminal Tt.

[0032] Figure 21 This is a schematic diagram used to explain the second test of the semiconductor device 1 according to the first embodiment.

[0033] Figure 22 This is a flowchart illustrating the test operation of a second test of a semiconductor device according to the first embodiment.

[0034] Figure 23 This is a flowchart illustrating the test operation of a second test of a semiconductor device according to the first embodiment.

[0035] Figure 24 This is for explaining the second test of the semiconductor device 1 according to the first embodiment. Figure 21 This is a diagram illustrating the test operations following the test operation shown.

[0036] Figure 25 This illustration shows a second test of the semiconductor device according to the first embodiment. Figure 22 and 23 The flowchart for the subsequent testing operations.

[0037] Figure 26 This illustration shows a second test of the semiconductor device according to the first embodiment. Figure 22 and 23 The flowchart for the subsequent testing operations.

[0038] Figure 27 This is for explaining the second test of the semiconductor device 1 according to the first embodiment. Figure 24 This is a diagram illustrating the test operations following the test operation shown.

[0039] Figure 28 This illustration shows a second test of the semiconductor device according to the first embodiment. Figure 25 and 26 The flowchart for the subsequent testing operations.

[0040] Figure 29 This is for explaining the second test of the semiconductor device 1 according to the first embodiment. Figure 27 This is a diagram illustrating the test operations following the test operation shown.

[0041] Figure 30 This illustration shows a second test of the semiconductor device according to the first embodiment. Figure 28 The flowchart for the subsequent testing operations.

[0042] Figure 31 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 22 and 23 The trace Fu related to the test operation is shown.

[0043] Figure 32 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 28 and 30 The trace Fua is shown, which is related to the test operation.

[0044] Figure 33 This is a configuration diagram of the semiconductor device 1 according to the first embodiment, showing the case of the wiring Fub input to the temperature sensor.

[0045] Figure 34 The diagram illustrates a configuration of a semiconductor device 1 according to a first embodiment, showing the trace Fuc for measuring the reference voltage VREFu and the PTAT voltage VPTATu of the temperature sensor THSu.

[0046] Figure 35 This is a flowchart illustrating a control method for a semiconductor device according to a first embodiment.

[0047] Figure 36 The diagram illustrates the configuration of semiconductor device 2 according to Embodiment 2.

[0048] Figure 37 The diagram illustrates the configuration of semiconductor device 3 according to embodiment 3.

[0049] Figure 38 This is a diagram illustrating the resistor voltage divider ZR in the semiconductor device according to Embodiment 3.

[0050] Figure 39 This is a block diagram illustrating the control unit CON in the semiconductor device according to Embodiments 1 to 3. Detailed Implementation

[0051] For clarity, the following descriptions and figures have been appropriately omitted and simplified. In the figures, the same elements are represented by the same reference numerals, and repeated descriptions are omitted where necessary. Some reference numerals may be omitted to prevent the figures from becoming complex.

[0052] First, in the "Comparative Example" section, a semiconductor device according to the comparative example will be described. Then, in the "Problems Newly Discovered by the Inventor" section, problems newly discovered by the inventor regarding the semiconductor device of the comparative example will be described. Next, in the "First Embodiment" to "Third Embodiment" sections, semiconductor devices according to the first to third embodiments will be described in comparison with the comparative example. This will make the semiconductor device according to this embodiment clear. It should be noted that the comparative example and the problems newly discovered by the inventor are also included within the scope of the technical concept of the embodiments.

[0053] Comparison Examples

[0054] Figure 1 This is a diagram illustrating the configuration of semiconductor device 101 according to a comparative example. (See diagram below.) Figure 1 As shown, semiconductor device 101 includes multiple temperature sensors (hereinafter sometimes referred to as thermal sensors or THS). The temperature sensors may be denoted as THS or temperature sensor THS.

[0055] Multiple temperature sensors THS include, for example, four temperature sensors TH1 to THS4. It should be noted that the number of temperature sensors THS is four only as an example, and it can be three or fewer, or five or more. Each temperature sensor THS includes a bandgap reference circuit BGR, an analog-to-digital converter (ADC, sometimes referred to hereinafter), and multiple analog switches (sometimes referred to ASSEN or switches hereinafter). For example, temperature sensor THS1 includes a bandgap reference circuit BGR1, an ADC1, and analog switches ASSEN. Temperature sensor THS2 includes a bandgap reference circuit BGR2, an ADC2, and analog switches ASSEN. Temperature sensor THS3 includes a bandgap reference circuit BGR3, an ADC3, and analog switches ASSEN. Temperature sensor THS4 includes a bandgap reference circuit BGR4, an ADC4, and analog switches ASSEN.

[0056] Multiple temperature sensors THS can be formed in a system-on-a-chip (SoC), microcontroller unit (MCU), chiplet, etc. The semiconductor device 101, which is a system-on-a-chip (SoC), microcontroller unit (MCU), chiplet, etc., has external terminals Tr1 and Tp1.

[0057] Each temperature sensor in the THS generates a PTAT voltage Vptat and a reference voltage Vref based on the output of the bandgap reference circuit BGR. The AD converter (ADC) converts the PTAT voltage Vptat into the AD conversion value THCODE based on the reference voltage Vref. Figure 2This is a graph illustrating the temperature characteristics of the reference voltage Vref1 and PTAT voltage Vptat1 of the temperature sensor THS1 in the semiconductor device 101 according to the comparative example. The horizontal axis indicates temperature, and the vertical axis indicates voltage value. Figure 2 The diagram shows the voltages Vout (bandgap reference voltage), CTAT (complementary to the absolute temperature voltage), and PTAT (proportional to the absolute temperature voltage) generated by the bandgap reference circuit BGR. Figure 2 As shown, the reference voltage Vref1 and PTAT voltage Vptat1 in the temperature sensor THS1 have temperature characteristics. Voltage Vout corresponds to the reference voltage Vref described here. Figure 2 As shown, the reference voltage Vref1 is almost independent of temperature. On the other hand, the PTAT voltage Vptat1 has a predominantly linear temperature dependence. By using this reference voltage Vref1 and the PTAT voltage Vptat1 for analog-to-digital conversion, a temperature-corresponding digital value can be obtained. In other words, AD converter ADC1 converts the PTAT voltage Vptat1 from an analog value to a digital value based on the reference voltage Vref1. AD converters ADC2 to ADC4 convert the PTAT voltages Vptat2 to Vptat4 from analog values ​​to digital values ​​based on reference voltages Vref2 to Vref4, respectively.

[0058] It is desirable that the temperature accuracy error of each of the one or more temperature sensors THS mounted on the semiconductor device 101 be equally small. Therefore, it is necessary to calibrate the temperature characteristics of each temperature sensor THS.

[0059] The temperature sensor THS1 has a generation circuit (not shown) that generates voltages Vref1_H and Vref1_L by dividing a reference voltage Vref1. When the temperature is at the upper limit of the operating temperature range, voltage Vref1_H corresponds to the PTAT voltage Vptat1. When the temperature is at the lower limit of the operating temperature range, voltage Vref1_L corresponds to the PTAT voltage Vptat1. For example, the upper limit of the operating temperature range is 125 degrees Celsius, and the lower limit is -40 degrees Celsius. It should be noted that the upper limit of the operating temperature range is not limited to 125 degrees Celsius, and the lower limit is not limited to -40 degrees Celsius. In testing, the temperature sensor THS1 converts voltages Vref1_H and Vref1_L to AD conversion values ​​THCODE1_H and THCODE1_L, respectively, based on the reference voltage Vref1. The generated voltages Vref1_H and Vref1_L are measured via external terminal Tp1. The reference voltage Vref1 is measured via external terminal Tr1. The temperature characteristics of temperature sensor THS1 are obtained based on the measured values ​​of AD conversion THCODE1_H and THCODE1_L, as well as voltages Vref1_H and Vref1_L.

[0060] Return to Figure 1 In the test, the voltages Vref1_H and Vref1_L generated by temperature sensor THS1 were supplied to temperature sensors THS2 through THS4, respectively. Temperature sensor THS2, based on its reference voltage Vref2, converted the voltages Vref1_H and Vref1_L supplied by temperature sensor THS1 into AD conversion values ​​THCODE2_H and THCODE2_L. Similarly, temperature sensors THS3 and THS4 also output AD conversion values ​​THCODE3_H, THCODE3_L, THCODE4_H, and THCODE4_L. The difference between the AD conversion value obtained by temperature sensor THS1 and the AD conversion value THCODE obtained by temperature sensors THS2 through THS4 was calculated.

[0061] As mentioned above, the reference voltage Vref1 is measured via external terminal Tr1. On the other hand, the voltages Vref1_H and Vref1_L supplied from temperature sensor THS1 to temperature sensors THS2 through THS4 can be measured via external terminal Tp1. Therefore, the reference voltage Vref of temperature sensors THS2 through THS4 can be estimated by the difference between the AD conversion values ​​of temperature sensor THS1 and temperature sensors THS2 through THS4, and by the voltages measured at external terminals Tr1 and Tp1. Once the reference voltage Vref value of each temperature sensor THS is known, the PTAT voltage Vptat of each temperature sensor THS can be estimated. In this way, the temperature characteristics of temperature sensors THS2 through THS4 are obtained. It should be noted that due to the characteristics of the reference voltage Vref, voltages Vref1_H and Vref1_L are not affected by the temperature difference at the location of temperature sensor THS, thus allowing the temperature characteristics of each temperature sensor THS to be obtained. Therefore, tests are performed to obtain the temperature characteristics of each temperature sensor THS, and temperature characteristic correction is performed based on the test results.

[0062] The reason for using voltages Vref1_H and Vfer1_L is that, in use, regardless of the temperature of the semiconductor device 101 (such as a system-on-a-chip (SoC)), the characteristics of the temperature sensor THS at the guaranteed operating temperature limits of 125 degrees and -40 degrees can be obtained.

[0063] The inventor's newly discovered problem

[0064] As described above, the temperature characteristics of temperature sensor THS1 are confirmed based on the voltage measured via terminals Tr and Tp. However, if these measurements include measurement errors, the temperature characteristics of temperature sensor THS1 may not be accurately obtained. Furthermore, temperature sensors THS2 to THS4 are located at different locations within the semiconductor device. Therefore, temperature differences may occur between temperature sensors THS2 and THS4 during testing. That is, the test conditions for temperature sensors THS2 and THS4 are not necessarily the same.

[0065] Figure 3 This is a diagram illustrating the configuration of the states during measurement in the semiconductor device 101 according to a comparative example. (As shown) Figure 3 As shown, during the measurement of various parameters of semiconductor device 101, test device ME is coupled to external terminals Tr1 and Tp1. The inventors' newly identified problem is as follows.

[0066] Measurement error caused by the probe

[0067] In a test environment using the test device ME, measurement errors in the voltage at external terminals Tr1 and Tp1 affect the acquisition of the temperature characteristics of the temperature sensor THS. Specifically, the measurement error is caused by the contact resistance between the sample and the socket or probe when the sample is loaded onto the test board.

[0068] The effect of voltage drop caused by internal wiring from temperature sensor THS1 to temperature sensor THSn

[0069] Each temperature sensor THS2 to THS4 receives either voltage Vref1_H or Vref1_L generated by temperature sensor THS1 via a signal line and a switch As. For example, only switch As of temperature sensor THS3 is turned on, and voltages Vref1_H and Vref1_L are supplied to temperature sensor THS3.

[0070] The temperature sensor THS has a high impedance input, but a slight voltage drop will occur.

[0071] Furthermore, due to the long signal line L between the temperature sensors THS, power supply noise during testing will result in voltage fluctuations (voltage drop) caused by wiring load (LCR). This, as a measurement error, affects the acquisition of the temperature characteristics of each temperature sensor THS2 to THS4.

[0072] The effect of the power supply voltage supplied to each temperature sensor THSn when temperature sensor THS1 is used as a reference.

[0073] During testing, the GND level within the semiconductor device 101 (such as a system-on-chip (SoC)) fluctuates. For example, if temperature sensor THS3 is formed within a power supply isolation (PoI) region (not shown) separate from the power supply voltage of temperature sensor THS1, the GND levels of temperature sensors THS1 and THS3 may not match. For instance, when the voltages Vref1_H and Vref1_L generated by temperature sensor THS1 are supplied to temperature sensor THS3, the supplied voltages cause a slight voltage difference in temperature sensor THS3. This voltage difference affects the acquisition of temperature characteristics as a measurement error.

[0074] Therefore, when obtaining temperature characteristics, the semiconductor device 101 of the comparative example is affected by at least one of the measurement errors associated with external terminals Tr1 and Tp1, the measurement error associated with signal line L, and the measurement error associated with GND level.

[0075] Overview of the First Embodiment

[0076] Next, an overview of the semiconductor device in this embodiment will be described. Figure 4This is a schematic configuration diagram of the semiconductor device 1 according to the first embodiment. Figure 4 As shown, the semiconductor device 1 of this embodiment has external terminals Tr and Tp, instead of the external terminals Tr1 and Tp1 of the semiconductor device 101 in the comparative example. Furthermore, the semiconductor device 1 has an external input terminal Tt. The external terminals Tr, Tp, and Tt can be simply referred to as terminals Tr, Tp, and Tt. Additionally, the semiconductor device 1 has multiple temperature sensors. Figure 4 The diagram shows four temperature sensors THS1 to THS4, but the number of temperature sensors is not limited to this. Each temperature sensor THS1 to THS4 is interconnected via signal line La. Additionally, each temperature sensor THS1 to THS4 is interconnected via signal line Lb. In this embodiment, only one terminal Tt is shown, but this is not a limitation; multiple terminals may be provided. Terminals Tr, Tp, and Tt can be considered as the first terminal, the second terminal, and the third terminal, respectively. Signal line La can be considered as the first signal line, and signal line Lb can be considered as the second signal line.

[0077] Semiconductor device 1 also includes a terminal Tvcc. Terminal Tvcc can be considered as a fourth terminal. A predetermined voltage VCC is supplied to terminal Tvcc. For example, the predetermined voltage VCC is a power supply voltage. Terminal Tvcc is coupled to each temperature sensor THS via switch As and wiring Lvcc. In addition, semiconductor device 1 includes a control unit CON. Semiconductor device 1 can be a system-on-a-chip (SoC), microcontroller unit (MCU), or chiplet similar to semiconductor device 101.

[0078] Figure 5 This diagram illustrates the configuration of a semiconductor device 1 and a test device ME for testing the semiconductor device 1 according to a first embodiment. The semiconductor device 1 includes a temperature sensor THS1. Furthermore, the semiconductor device 1 includes temperature sensors THSu (u=2, 3, 4, etc.). That is, the semiconductor device 1 means that it includes two or more temperature sensors THS2, THS3, THS4, etc.

[0079] Temperature sensor THS1 includes a bandgap reference circuit BGR1 and switches As101, As111, As121, As201, As211, As301, As311, and As321. Temperature sensor THS1 includes first to fourth switching units, which will be described later. Control unit CON controls the on / off state of these switches As.

[0080] Switch As101 is turned on to output the reference voltage Vref from the bandgap reference circuit BGR1 from terminal Tr (first terminal). Switch As101 constitutes the first switching unit. The first switching unit is provided to output the reference voltage Vref generated based on the output of the bandgap reference circuit BGR1 from the first terminal.

[0081] Switch As201 is turned on to output the PTAT (temperature-proportional) voltage Vptat from the bandgap reference circuit BGR1 from terminal Tp. Switch As201 constitutes a second switching unit. The second switching unit is provided to output the PTAT voltage Vptat generated based on the output of the bandgap reference circuit BGR1.

[0082] Switch As301 is configured to connect signal line La or signal line Lb to terminal Tt. Switch As111 is coupled at one end to terminal Tvcc and at the other end to wiring connecting switch As311 and terminal Tr. Switch As121 is coupled at one end to signal line Lb and at the other end to wiring connecting switch As311 and terminal Tr. Switch As211 is coupled at one end to signal line La and at the other end to wiring between switch As321 and terminal Tp. Switch As311 is coupled at one end to signal line La and at the other end to terminal Tr. Switch As321 is coupled at one end to signal line Lb and at the other end to terminal Tp. Switches As301, As311, As121, As321, and As211 constitute a third switching unit. The third switching unit is provided to connect between terminal Tt (the third terminal) and terminal Tr or Tp (the first or second terminal). Switch As111 constitutes a fourth switching unit. The fourth switching unit is provided to output a predetermined voltage to the temperature sensor THS1 from the first terminal to the third terminal.

[0083] Subsequently, switches As101, As111, As121, As201, As211, As301, As311, and As321 can be collectively referred to as switches As within the temperature sensor THS1, without specific distinction. Switch As101 can also be referred to as the first switching unit. Switch As201 can also be referred to as the second switching unit. Furthermore, switches As301, As311, As121, As321, and As211 can also be referred to as the third switching unit. Switch As111 can also be referred to as the fourth switching unit.

[0084] Therefore, semiconductor device 1 includes a temperature sensor TH1, a control unit CON for controlling the temperature sensor THS1, and first to third terminals (Tr, Tp, Tt). The temperature sensor THS1 includes a bandgap reference circuit BGR1 that outputs a reference voltage Vref1 and a PTAT voltage Vptat1 with primarily linear temperature dependence, and an AD converter ADC1 that converts the PTAT voltage Vptat1 from an analog value to a digital value based on the reference voltage Vref1. The temperature sensor THS1 can be considered as a first temperature sensor. The reference voltage Vref1 generated within the temperature sensor THS1 can be considered as a first reference voltage Vref. The PTAT voltage Vptat1 generated within the temperature sensor THS1 can be referred to as a first detection voltage or a first PTAT voltage Vptat. Additionally, the AD converter ADC1 within the temperature sensor THS1 can be considered as a first AD converter ADC.

[0085] The temperature sensor THSu includes a bandgap reference circuit BGRu and switches As10u, As11u, As12u, As20u, As21u, As30u, As31u, and As32u. The temperature sensor THSu also includes fifth to eighth switching units, which will be described later. The control unit CON further controls the on / off state of these switches As within the temperature sensor THSu.

[0086] Switch As10u is provided between the terminal from which the reference voltage Vrefu is output from the bandgap reference circuit BGRu and switch As31u. Switch As10u constitutes the fifth switching unit. The fifth switching unit is provided to output the reference voltage Vref generated based on the output of the bandgap reference circuit BGRu from the first terminal.

[0087] Switch As11u is coupled at one end to terminal Tvcc and at the other end to the wiring connecting switches As10u and As31u. Switch As11u constitutes the eighth switching unit. The eighth switching unit is provided to output a predetermined voltage to temperature sensor THS2 from the first to the third terminal.

[0088] Switch As12u is coupled to signal line Lb at one end and to wiring connecting switches As10u and As31u at the other end.

[0089] Switch As20u is provided between the terminal of the PTAT voltage Vptat output from the bandgap reference circuit BGRu and switch As32u. Switch As20u constitutes the sixth switching unit. The sixth switching unit is provided to output the PTAT voltage Vptat generated based on the output of the bandgap reference circuit BGRu.

[0090] Switch As21u is coupled to signal line La at one end and to the wiring between switches As20u and As32u at the other end. Switch As31u is coupled to signal line La at one end and to the wiring connecting switches As10u and As31u at the other end. Switch As32u is coupled to signal line Lb at one end and to switch As20u at the other end. Switches As30u, As31u, As12u, As32u, and As21u constitute a seventh switching unit. The seventh switching unit is provided to be connected between the third terminal and either the first or second terminal.

[0091] Subsequently, switches As10u, As11u, As12u, As20u, As21u, As30u, As31u, and As32u can be collectively referred to as switches As within the temperature sensor THSu, without specific distinction. Additionally, switch As10u can be referred to as the fifth switching unit. Switch As20u can also be referred to as the sixth switching unit. Furthermore, switches As30u, As31u, As12u, As32u, and As21u can be referred to as the seventh switching unit. Switch As11u can be referred to as the eighth switching unit.

[0092] Therefore, semiconductor device 1 also includes a temperature sensor THSu and signal lines La and Lb. The temperature sensor THSu includes a bandgap reference circuit BGRu that outputs a reference voltage Vrefu and a PTAT voltage Vptatu with primarily linear temperature dependence, and an AD converter ADCu that converts the PTAT voltage Vptatu from an analog value to a digital value based on the reference voltage Vrefu. The temperature sensor THSu can be considered a second temperature sensor. The reference voltage Vrefu generated within the temperature sensor THSu can be considered a second reference voltage Vref. The PTAT voltage Vptatu generated within the temperature sensor THSu can also be referred to as a second detection voltage or a second PTAT voltage Vptat. Additionally, the AD converter within the temperature sensor THSu can be considered a second AD converter ADC.

[0093] Signal lines La and Lb are the wiring that couples temperature sensor THS1 to each of temperature sensors THS2 through THS4.

[0094] Semiconductor device 1 is coupled to test device ME for testing. Test device ME includes control unit TCON, storage unit TMEM, voltage measurement units VMr, VMp, VMt, and voltage output unit VFt. Control unit TCON is, for example, a CPU. Control unit TCON generates a test pattern according to the test program stored in storage unit TMEM, and controls voltage measurement units VMr, VMp, VMt, and VFt to perform the test. Voltage measurement unit VMr is coupled to terminal Tr of semiconductor device 1 and measures the voltage at terminal Tr. Voltage measurement unit VMp is coupled to terminal Tp of semiconductor device 1 and measures the voltage at terminal Tp. Voltage measurement unit VMt is coupled to terminal Tt of semiconductor device 1 and measures the voltage at terminal Tr. Voltage output unit VFt is coupled to terminal Tt of semiconductor device 1 and applies a voltage to terminal Tt. Additionally, control unit TCON outputs a test mode signal TMODE to set the test mode of semiconductor device 1. The control unit CON in semiconductor device 1 controls the on / off state of switch As within temperature sensor THS based on instructions from the test mode signal TMODE. Note that in Figure 5 In the diagram, the test device ME is shown as a single device, but the test device ME, the control unit TCON, and the voltage measurement unit can be configured by coupling the independent devices to each other.

[0095] Compared to temperature sensors THSu (such as temperature sensors THS2, THS3, and THS4), terminals Tr, Tp, and Tt are positioned relatively closer to temperature sensor THS1. In other words, the distance from terminals Tr, Tp, and Tt to temperature sensor THS1 is less than the distance from terminals Tr, Tp, and Tt to any of temperature sensors THS2, THS3, and THS4.

[0096] Voltage drops occur when current flows through terminals Tr, Tp, Tt, and Tvcc. The voltage drops at terminals Tr, Tp, Tt, and Tvcc are referred to as voltage drops Zr, Zp, Zt, and Zvcc, respectively. Voltage drop Zt includes the wiring load and pad or bump load of terminal Tt. The pad or bump load includes the following (a) and (b). Note that although the load amounts differ, voltage drops Zr, Zp, and Zvcc also include the wiring load and pad or bump load.

[0097] (a) Contact load with probes during wafer testing of semiconductor device 1

[0098] (b) During the packaging test of semiconductor device 1, the contact load with the socket and the wiring load within the package.

[0099] The voltage drop Zvcc at terminal Tvcc has a relatively large value, especially due to the large number of pads or bumps. Voltage drops Zia and Zib are the voltage drops caused by each signal line La and Lb. Voltage drop Zvcc is the voltage drop caused by the wiring Lvcc. The amount of voltage drop will vary slightly depending on the voltage applied to the wiring. Note that the unit of voltage drop is volts.

[0100] The signals processed in the input and output are direct current (DC) voltages. The inputs of the voltage measurement unit (such as a SoC, MCU, or chiplet) of semiconductor device 1 and the test device ME are high impedance. Figure 5 The wiring distance indicated by the dashed line within the temperature sensor THS1 shown is relatively short. Therefore, the effect of voltage drop is considered minimal. Additionally, the wiring from the terminals Tr, Tp, and Tt of semiconductor device 1 to the test device ME (i.e., Figure 5 The wiring indicated by the single-dotted line in the diagram consists of the wiring on the test board, and the effect of voltage drop is considered to be minimal.

[0101] Next, a description of the testing of the temperature sensor within semiconductor device 1 will be given. Semiconductor device 1 performs the first to third tests described below for temperature characteristic correction of the temperature sensor.

[0102] First Test

[0103] The first test is to understand the measurement errors caused by probes, etc. The first test is performed according to the test program installed in the test device ME. The test device ME applies a voltage to the semiconductor device 1, which is the device under test, according to the test program, and outputs a test mode signal TMODE to perform the first test. Figure 6 This is a schematic diagram used to explain the first test of the semiconductor device 1 according to the first embodiment.

[0104] Semiconductor device 1 may further include wiring Lr, wiring Lp, wiring Lt, and wiring Lvcc. Wiring Lr couples temperature sensor THS1 and terminal Tr. Wiring Lp couples temperature sensor THS1 and terminal Tp. Wiring Lt couples temperature sensor THS1 and terminal Tt. Wiring Lvcc couples temperature sensor THS1 and terminal Tvcc. Wiring Lvcc is connected to wiring Lr, wiring Lp, and wiring Lt via a switch As within temperature sensor THS1.

[0105] The control unit CON of semiconductor device 1 controls the operation of switch As in semiconductor device 1 according to the test mode signal TMODE output from test device ME, based on the test program. When the first test of semiconductor device 1 begins, control unit CON controls switch As in temperature sensor THS1, causing test device ME to measure the voltages appearing at terminals Tr, Tp, and Tt. The measurement error caused by the probe can be obtained based on the measured voltages.

[0106] Figures 7 to 9 This is a flowchart illustrating the operation of a first test in semiconductor device 1 according to a first embodiment. For example... Figure 7 As shown, the control unit CON controls the switch As inside the temperature sensor THS1, so that the voltage VCC input from the terminal Tvcc can be measured at the terminal Tt.

[0107] Specifically, in step S11 (first measurement step), the control unit CON controls the switch As within the temperature sensor THS1 to branch the wiring within the temperature sensor THS1 that is coupled at a point to the terminal Tvcc, where a voltage VCC is supplied, and supplies voltage to the wiring Lr via that point. In step S12, a voltage Vcc1_Tr (first measurement voltage) including the voltage drop Zr caused by the terminal Tr and the wiring Lr is output from the terminal Tr. The output voltage Vcc1_Tr of the terminal Tr is VCC - Zr. Voltage measurement is performed using high impedance.

[0108] Next, as Figure 8 As shown, the control unit CON controls the switch As within the temperature sensor THS1, enabling the measurement of the voltage VCC input from the terminal Tvcc at terminal Tp. The voltage drop Zp may include the voltage drop across wiring Lp.

[0109] Specifically, in step S21 (second measurement step), the control unit CON controls the switch As within the temperature sensor THS1 to branch the wiring within the temperature sensor THS1 that is coupled to the terminal Tvcc, where a voltage VCC is supplied, at the aforementioned point within the temperature sensor THS1, and supplies voltage to the wiring Lp via this point. In step S22, a voltage Vcc1_Tp (second measurement voltage) including the voltage drop Zp caused by the terminal Tp and the wiring Lp is output from the terminal Tp. The output voltage Vcc1_Tp of the terminal Tp is VCC - Zp. Voltage measurement is performed using high impedance.

[0110] In addition, such as Figure 9 As shown, the control unit CON controls the switch As within the temperature sensor THS1, enabling the measurement of the voltage VCC input from terminal Tvcc at terminal Tt. The voltage drop Zt may include the voltage drop across wiring Lt.

[0111] Specifically, in step S31, the control unit CON controls the switch As within the temperature sensor THS1 to branch the wiring coupled at the aforementioned point within the temperature sensor THS1 to the terminal Tvcc, which is supplied with voltage VCC, and supplies voltage to the wiring Lt via this point. In step S32, a voltage Vcc1_Tt is output from the terminal Tt, which includes the voltage drop Zt caused by the terminal Tt and the wiring Lt. The output voltage Vcc1_Tt of the terminal Tt is VCC - Zt. Voltage measurement is performed using high impedance.

[0112] Figure 10 This is for explaining the first test of the semiconductor device 1 according to the first embodiment. Figure 6 This is a diagram illustrating the test operations following the test operation shown. Figure 11 The illustration shows the semiconductor device 1 according to the first embodiment. Figures 7 to 9 The flowchart for the subsequent test operation is as follows. The control unit CON controls the switch As within the temperature sensor THS1 to form a trace from terminal Tt through wiring Lt and wiring Lr to terminal Tr. This allows the voltage applied to terminal Tt to be measured at terminal Tr. Then, as... Figure 11 As shown in step S41 (third measurement step), the test device ME inputs a voltage to terminal Tt. The test device ME adjusts the voltage input to terminal Tt so that voltage Vcc1_Tr is output from terminal Tr. When the measured voltage at terminal Tr becomes voltage Vcc1_Tr, the voltage input from terminal Tt is called voltage Vtest1a_Ttr (third measurement voltage). The voltage drop Zt may include the voltage drop across wirings Lt and Lr.

[0113] like Figure 11 As shown in step S42, the following equations (1-1) and (1-2) are derived. Equation (1-2) is derived by setting the voltage VCC to voltage VCC1 in step S32.

[0114] Vtest1a_Ttr-Zt=VCC1 (1-1)

[0115] Vcc1_Tt+Zt=VCC1 (1-2)

[0116] Here, Vtest1a_Ttr and VCC1_Tt are measured values, and VCC1 and Zt are unknown values. Therefore, in step S43, VCC1 and Zt are derived as shown in the following equations (1-3) and (1-4).

[0117] VCC1=(Vtest1a_Ttr+Vcc1_Tt) / 2 (1-3)

[0118] Zt=(Vtest1a_Ttr-Vcc1_Tt) / 2 (1-4)

[0119] In this way, the internal voltage VCC1 and voltage drop Zt of the temperature sensor THS1 are derived. The output voltage Vcc1_Tr at terminal Tr is VCC1 - Zr. Therefore, the voltage drop Zr is obtained by using the value calculated in equation (1-3).

[0120] Figure 12 This is for explaining the first test of the semiconductor device 1 according to the first embodiment. Figure 10 This is a diagram illustrating the test operations following the test operation shown. Figure 13 The illustration shows the semiconductor device 1 according to the first embodiment. Figure 11 The flowchart for the subsequent test operation is as follows. The control unit CON controls the switch As within the temperature sensor THS1 to form a trace from terminal Tt through wiring Lt and wiring Lp to terminal Tp. This allows measurement of the voltage applied to terminal Tt at terminal Tp. Figure 13 As shown in step S51, the test device ME inputs a voltage from terminal Tt. The test device ME adjusts the voltage input to terminal Tt so that voltage Vcc1_Tp is output from terminal Tt. When the measured voltage at terminal Tp becomes voltage Vcc1_Tp, the voltage input from terminal Tt is called voltage Vtest1b_Ttp (the fourth measured voltage). The voltage drop Zt may include the voltage drop across wirings Lt and Lr.

[0121] like Figure 13 As shown in step S52, the following equations (2-1) and (2-2) are derived. By... Figure 9 In step S32, the voltage VCC is set to voltage VCC1 to derive equation (2-2).

[0122] Vtest1b_Ttp-Zt=VCC1 (2-1)

[0123] Vcc1_Tt+Zt=VCC1 (2-2)

[0124] Here, Vtest1b_Ttp and Vc1_Tt are measured values, and VCC1 and Zt are unknown values. Therefore, in step S53, VCC1 and Zt are derived as shown in the following equations (2-3) and (2-4).

[0125] VCC1=(Vtest1b_Ttp+Vcc1_Tt) / 2 (2-3)

[0126] Zt=(Vtest1b_Ttp-Vcc1_Tt) / 2 (2-4)

[0127] In this way, the internal voltage VCC1 and voltage drop Zt of the temperature sensor THS1 are derived. The output voltage Vcc1_Tp of terminal Tp is VCC1-Zp. Therefore, the voltage drop Zp is obtained by using the value calculated in equation (2-3).

[0128] In the first test mentioned above, using Figures 14 to 17 The wiring formed by the switch As within the temperature sensor THS1 is shown and explained in detail. To form these wirings, the test device ME outputs a test mode signal TMODE according to the test procedure. Then, the control unit CON controls the switch As within the temperature sensor THS1 based on the instructions from the test mode signal TMODE.

[0129] Figure 14 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 7 and 9 The routing related to the test operation is shown. Figure 14 The trace shown is called trace E1. For example... Figure 14 As shown, the voltage at a predetermined point of temperature sensor THS1 is referred to as voltage VCCza1. The predetermined point is, for example, the point between switches As111 and As311 and the external terminal Tr, as shown in the attached figure. Voltage VCCza1 includes the voltage drop Zvcc1 due to terminal Tvcc and wiring Lvcc. The voltage at a predetermined location of temperature sensor THSu (u=2, 3, 4…) is referred to as voltage VCCzau. Voltage VCCzau includes the voltage drop Zvccu due to terminal Tvcc and wiring Lvcc.

[0130] like Figure 14 As shown, in trace E1, voltage VCC is input to temperature sensor THS1. Voltage measurement unit VMr measures the voltage VCC input to temperature sensor THS1 via terminal Tr. Additionally, voltage measurement unit VMt measures the voltage VCC input to temperature sensor THS1 via signal line La and terminal Tt. To form this trace E1, control unit CON turns on switches As111 and As311 based on the test mode signal TMODE from test device ME. Control unit CON also controls switch As301, causing signal line La and terminal Tt to be coupled. In other words, trace E1 is formed by control unit CON controlling the third switch unit (switches As301, As311, As121, As321, and As211) and the fourth switch unit (switch As111).

[0131] Voltages are measured at the terminals of voltage measurement units VMr and VMt on the ME side of the test device. The voltage measured by voltage measurement unit VMr at terminal Tr is called VMr_E1, and the voltage measured by voltage measurement unit VMt at terminal Tt is called VMt_Ea1m. This yields the following equation.

[0132] VCC = VCCza1 + Zvcc1 (Equation 01)

[0133] VMr_E1=VCCza1-Zr (Equation 02)

[0134] VMt_Ea1m=VCCza1-Zia-Zt (Equation 03)

[0135] These equations can be used to derive the following equation.

[0136] VMr_E1-VMt_Ea1m=Zt+Zia-Zr (Equation 04)

[0137] Zr = Zt + Zia - VMr_E1 + VM_Ea1m

[0138] VMr_E1 and VMt_Ea1m are values ​​measured by the test device ME. VCCza1, Zr, Zt, and Zia are unknown values.

[0139] Subsequently, the control unit CON is formed. Figure 15 The routing is shown, and tests are performed. Figure 15 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 11 The routing related to the test operation is shown. Figure 15 The trace shown is called trace E1a. For example... Figure 15 As shown, in trace E1a, the voltage measurement unit VMr measures the voltage input from the voltage output unit VFt via terminal Tt via signal line La, temperature sensor THS1, and terminal Tr. To form this trace E1a, the control unit CON turns on switch As311 based on the test mode signal TMODE from the test device ME. The control unit CON also controls switch As301, causing signal line La and terminal Tt to be coupled. In other words, trace E1a is formed by the control unit CON controlling the third switching unit (switches As301, As311, As121, As321, As211).

[0140] The voltage is input from the voltage output unit VFt on the ME side of the test device. When the voltage measured by the voltage measurement unit VMr becomes voltage VMr_E1, the voltage output by the voltage output unit VFt is called voltage VFt_Ea1. Then, the following equation is obtained.

[0141] VMr_E1=VFt_Ea1-Zt-Zia-Zr (Equation 05)

[0142] VFt_Ea1-VMr_E1=Zt+Zia+Zr (Equation 06)

[0143] Zr=-Zt-Zia+VFt_Ea1-VMr_E1

[0144] VMr_E1 is the measured value. VFt_Ea1 is the set value. Zr, Zt, and Zia are unknown values.

[0145] Here, we obtain the following equation from (Equation 06) - (Equation 04).

[0146] Zr=(VFt_Ea1-VMr_E1-VMr_E1+VMt_Ea1m) / 2 (Equation 07)

[0147] The calculated value VFt_Ea1 uses VMt_Ea1f. This value is referred to as Zrα. By rearranging (Equation 02) and (Equation 03), the following equation is obtained.

[0148] VCCza1=VMr_E1-Zr (Equation 08)

[0149] VCCza1=VMt_Ea1m+Zia+Zt

[0150] Zia+Zt=VCCza1-VMt_Ea1m (Equation 09)

[0151] VCCza1 and Zia+Zt are obtained as calculated values. Additionally, the following is obtained (Equation 10).

[0152] Zia+Zt=VMt_Ea1f-VCCza1 (Equation 10)

[0153] Subsequently, the control unit CON is formed. Figure 16 The routing shown is for testing purposes. Figure 16 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figures 7 to 9 The routing related to the described test operation. Figure 16 The trace shown is called trace E1b. For example... Figure 16 As shown, in trace E1b, the voltage at a predetermined first point of the temperature sensor THS1 is set to voltage VCCza1. Voltage VCCza1 includes the voltage drop Zvcc1 due to terminal Tvcc and wiring Lvcc. The predetermined first point is, for example, the location between switch As111, switch As311 and terminal Tr as shown in the attached figure. The predetermined first point will be similar to the predetermined point of trace E1.

[0154] Additionally, the voltage at a predetermined second point of the temperature sensor THS1 is set to voltage VCCzb1. Voltage VCCzb1 includes the voltage drop Zvcc1 caused by terminal Tvcc and wiring Lvcc. The predetermined second point is, for example, the point between switch As321, switch As211 and terminal Tp as shown in the attached figure.

[0155] Voltage VCC is input to temperature sensor THS1. Voltage measurement unit VMr measures the voltage VCC input to temperature sensor THS1 via terminal Tr. Additionally, voltage measurement unit VMt measures the voltage VCC input to temperature sensor THS1 via signal line La and terminal Tt. Furthermore, voltage measurement unit VMp measures the voltage VCC input to temperature sensor THS1 via signal line La and terminal Tp. To form this trace E1b, control unit CON turns on switches As111, As311, and As211 based on the test mode signal TMODE from test device ME. Furthermore, control unit CON controls switch As301, causing signal line La and terminal Tt to be coupled. In other words, trace E1b is formed by control unit CON controlling the third switch unit (switches As301, As311, As121, As321, As211) and the fourth switch unit (switch As111).

[0156] like Figure 16 As shown, there is no difference between the voltage and current path starting from the predetermined point of the indicated voltage VCCza1 and the voltage and current path starting from the predetermined first point shown in trace E1b. Therefore, the voltage is measured at the terminal of the voltage measurement unit VMr in trace E1b. It is then compared with the voltage measured at the terminal of the voltage measurement unit VMr in trace E1.

[0157] Additionally, in trace E1b, the voltage is measured at the terminal of the voltage measuring unit VMp via a predetermined second point. Since the signal lines La and Lb, viewed from the first point indicating voltage VCCza1 and the second point indicating voltage VCCzb1, are closely arranged, the voltage drops Zia and Zib are considered to be the same value. Therefore, the following equation is derived.

[0158] VCC = VCCza1 + Zvcc1 (Equation 01)

[0159] VCCza1 = VCCzb1 + Zia (Equation 11)

[0160] VMr_E1=VCCza1-Zr (Equation 02)

[0161] VMp_E1=VCCzb1-Zp (Equation 12)

[0162] VMt_Ea1m=VCCza1-Zia-Zt (Equation 03)

[0163] VMt_Ea1mp=VCCza1-Zia-Zt (Equation 13)

[0164] VMr_E1-VMt_Ea1m=Zt+Zia-Zr (Equation 04)

[0165] VMr_E1-VMt_Ea1mp=Zt+Zia-Zr (Equation 14)

[0166] Then, through (Equation 13) and (Equation 14), the following equations are derived.

[0167] VMt_Ea1m=VMt_Ea1mp (Equation 16)

[0168] VMt_Ea1mp=VCCzb1-Zia-Zt (Equation 17)

[0169] VMp_E1-VMt_Ea1mp=Zt+Zia-Zp (Equation 18)

[0170] VMr_E1 and VMt_Ea1mp are values ​​measured by the test device ME. Zr and VCCza1 are obtained based on (Equation 07) and (Equation 08), respectively. Zp, Zt, and Zia are unknown values. However, Zt+Zia is a value that can be obtained based on (Equation 09).

[0171] Figure 17 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 13 The routing related to the described test operation. Figure 17 The trace shown is called trace E1c. For example... Figure 17 As shown, in trace E1c, voltage measurement unit VMr measures the voltage input from voltage output unit VFt via terminal Tt via signal line La, temperature sensor THS1, and terminal Tr. Additionally, voltage measurement unit VMp measures the voltage input from voltage output unit VFt via terminal Tt via signal line La, temperature sensor THS1, and terminal Tp. To form this trace E1c, control unit CON turns on switches As311 and As211 based on the test mode signal TMODE from test device ME. Additionally, control unit CON controls switch As301, coupling signal line La and terminal Tt. In other words, trace E1c is formed by control unit CON controlling the third switching unit (switches As301, As311, As121, As321, As211) and the fourth switching unit (switch As111).

[0172] The voltage is input from the voltage output unit VFt of the test device ME. When the voltage measured by the voltage measurement unit VMr becomes voltage VMr_E1, and when the voltage measured by the voltage measurement unit VMp becomes voltage VMp_E1, the voltage output by the voltage output unit VFt is called voltage VFt_Ea1p. Therefore, the following equation is obtained.

[0173] VMr_E1=VFt_Ea1-Zt-Zia-Zr (Equation 05)

[0174] VMp_E1=VFt_Ea1p-Zt-Zia-Zp (Equation 19)

[0175] VFt_Ea1-VMr_E1=Zt+Zia+Zr (Equation 06)

[0176] VFt_Ea1p-VMp_E1=Zt+Zia+Zp (Equation 20)

[0177] VMr_E1 and VMp_E1 are measured values. VFt_Ea1p is a setpoint. Zr is a known value. Zp, Zt, and Zia are unknown values.

[0178] Here, we obtain the following equations from (Equation 20) to (Equation 18).

[0179] Zp=(VFt_Ea1p-VMp_E1-VMp_E1+VMt_Ea1mp) / 2 (Equation 21)

[0180] VFt_Ea1p uses VMt_Ea1fp. This value is called Zpα. By rearranging (Equation 17) and (Equation 18), the following equation is obtained.

[0181] VCCzb1=VMp_E1-Zp (Equation 22)

[0182] Zia+Zt=VCCzb1-VMt_Ea1fp (Equation 23)

[0183] Therefore, Zia+Zt is obtained through calculation.

[0184] Subsequently, the control unit CON is formed. Figure 18 The routing shown is used to perform the test. Figure 18 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 11 The routing related to the described test operation. Figure 18 The trace shown is called trace E1d. For example... Figure 18As shown, in trace E1d, the voltage measurement unit VMr measures the voltage input from the voltage output unit VFt via terminal Tt via signal line Lb, temperature sensor THS1, and terminal Tr. To form this trace E1d, the control unit CON turns on switch As121 based on the test mode signal TMODE from the test device ME. Additionally, the control unit CON controls switch As301, causing signal line Lb and terminal Tt to be coupled. A detailed explanation is provided below. Traces E1d are formed by the control unit CON controlling the third switching units (switches As301, As311, As121, As321, As211).

[0185] The voltage is input from the voltage output unit VFt of the test device ME. When the voltage measured by the voltage measurement unit VMr becomes voltage VMr_E1, the voltage output by the voltage output unit VFt is called voltage VFt_Eb1. Therefore, the following equation is obtained.

[0186] VMr_E1=VFt_Eb1-Zt-Zib-Zr (Equation 31)

[0187] Zt+Zib=VFt_Eb1-VMr_E1-Zr

[0188] Zt+Zib=VMt_Eb1f-VMr_E1-Zr (Equation 32)

[0189] Zt+Zib is obtained as the calculated value. VMr_E1 is the measured value. VFt_Eb1 is the set value. Zr, Zt, and Zib are unknown values. Zib+Zt is obtained from the above (Equation 09).

[0190] In formation Figures 14 to 18 After routing the circuit and obtaining the value of each voltage drop, the reference voltage VREF1 and PTAT voltage VPTAT1 output by the bandgap reference circuit BGR1 of the temperature sensor THS1 are measured. Figure 19 The diagram illustrates the configuration of the semiconductor device 1 according to the first embodiment, showing the routing of the reference voltage VREF1 and the PTAT voltage VPTAT1 output by the bandgap reference circuit BGR1 for measuring the temperature sensor THS1 at terminals Tr and Tp. Figure 19 The trace shown is called trace E1e. For example... Figure 19As shown, in trace E1e, voltage measurement unit VMr measures the voltage VREF1 of the reference voltage Vref1 output from the bandgap reference circuit BGR1 of temperature sensor THS1 via terminal Tr. Furthermore, in trace E1e, voltage measurement unit VMp measures the voltage VPTAT1 of the PTAT voltage ptat1 output from the bandgap reference circuit BGR1 of temperature sensor THS1 via terminal Tp. To form this trace E1e, control unit CON turns on switches As101 and As201 based on the test mode signal TMODE from test device ME. Trace E1e is formed by control unit CON controlling the first switch unit (switch As101) and the second switch unit (switch As201). Here, if the voltages measured by voltage measurement units VMr and VMp are expressed as voltage VMr_VREF1 and voltage VMp_VPTAT respectively, the following equation can be obtained.

[0191] VREF1=VMr_VREF1+Zrα (Equation 41)

[0192] VPTAT1 = VMr_VPTAT1 + Zpα (Equation 42)

[0193] The voltage drops Zrα and Zpα are values ​​calculated through the test operations described above. Therefore, by correcting the measured voltages VMr_VREF1 and VMp_VPTAT1 with the voltage drops Zrα and Zpα, the voltages VREF and VPTAT of the temperature sensor THS1 can be accurately obtained. Although not shown in the attached figures, the AD conversion values ​​of VPTAT1 / VREF1 are also obtained.

[0194] Figure 20 This diagram illustrates the configuration of the semiconductor device 1 according to the first embodiment, showing the routing of trace E1f. (As shown...) Figure 20 As shown, in the trace E1f, the voltage measurement unit VMt measures the voltage VREF1 of the reference voltage Vref1 output from the bandgap reference circuit BGR1 of the temperature sensor THS1 via the signal line La and the terminal Tt.

[0195] VREF1=VMr_VREF1+Zrα (Equation 43)

[0196] VREF1 = VMt_VREF1 + (Zia + Zt) (Equation 44)

[0197] VPTAT1 = VMr_VPTAT1 + Zpα (Equation 45)

[0198] Although not shown in the attached diagram, the AD conversion values ​​of VPTAT1 / VREF1 were also obtained.

[0199] Furthermore, in trace E1f, the voltage measurement unit VMt measures the voltage VPTAT1 of the PTAT voltage ptat1 output from the bandgap reference circuit BGR1 of the temperature sensor THS1 via signal line Lb and terminal Tt. Therefore, the following equation is obtained.

[0200] VREF1=VMr_VREF1+Zrα (Equation 46)

[0201] VPTAT1 = VMr_VPTAT1 + Zpα (Equation 47)

[0202] VPTAT1 = VMt_VPTAT1 + (Zib + Zt) (Equation 48)

[0203] Although not shown in the attached diagram, the AD conversion values ​​of VPTAT1 / VREF1 were also obtained.

[0204] By using the starting points of the reference voltage Vref1 and the PTAT voltage ptat1 from the bandgap reference circuit BGR1 on the circuit, the following equations are confirmed.

[0205] (Equation 41) = (Equation 43) = (Equation 44) = (Equation 46)

[0206] (Equation 42) = (Equation 45) = (Equation 47) = (Equation 48)

[0207] In this manner, terminal Tr outputs a first reference voltage Vref1. Terminal Tp outputs a first detection voltage (first PTAT voltage Vptat1). A first switching unit (switch As101) is provided to output the first reference voltage Vref1 from terminal Tr. A second switching unit (switch As201) ​​is provided to output the first detection voltage (first PTAT voltage Vpata1) from terminal Tp. A third switching unit (switches As301, As311, As121, As321, As211) is provided between terminal Tt and terminals Tr and Tp, and a fourth switching unit (As111) is provided between the point supplying the power supply voltage and terminal Tr.

[0208] The test method related to the first test of semiconductor device 1 includes the first measurement step, second measurement step, third measurement step, fourth measurement step, and calculation step described above. Here, the first measurement step includes controlling the third and fourth switching units such that a power supply voltage is output from terminal Tr, and a first measurement voltage is obtained from terminal Tr. The second measurement step includes controlling the third and fourth switching units such that a power supply voltage is output from terminal Tp, and a second measurement voltage is obtained from terminal Tp. The third measurement step includes controlling the third switching unit to output the voltage supplied from terminal Tt at terminal Tr, and measuring the third measurement voltage while obtaining the first measurement voltage at terminal Tr. The fourth measurement step includes controlling the third switching unit to output the voltage supplied from terminal Tt at terminal Tp, and measuring the fourth measurement voltage while obtaining the second measurement voltage at terminal Tp. The calculation step includes calculating the measurement error of terminal Tr based on the first and third measurement voltages, and calculating the measurement error of terminal Tp based on the second and fourth measurement voltages.

[0209] Second Test

[0210] The second test is to understand the effect of the voltage drop based on the internal wiring from temperature sensor THS1 to temperature sensor THSu. The second test is performed after the first test. The second test is performed according to the test procedure installed in the test device ME. Figure 5 As shown, the semiconductor device 1 in the first embodiment has two bidirectional signal lines La and Lb as signal lines between each temperature sensor THS. Additionally, the two signal lines La and Lb are configured to allow a loopback of the switch As within the temperature sensor THS. For example, a reference voltage Vref1 is supplied from temperature sensor THS1 to temperature sensor THS3 via signal line La. The reference voltage Vref1 supplied to temperature sensor THS3 returns to temperature sensor THS1 via signal line Lb. This allows the voltage difference between the supply voltage and the return voltage to be obtained at terminals Tr and Tp coupled to temperature sensor THS1. Additionally, the voltage difference between the supply voltage and the return voltage can be converted by an ADC of temperature sensor THS1. Using this difference (voltage fluctuation), the effect of the voltage drop based on the internal wiring from temperature sensor THS1 to temperature sensor THS1 can be estimated.

[0211] Figure 21 This is a schematic diagram used to explain the second test of the semiconductor device 1 according to the first embodiment. For example... Figure 21As shown, semiconductor device 1 includes a temperature sensor THS2 and signal lines La and Lb. Here, temperature sensor THS2 is used as an example to explain temperature sensor THS1. Temperature sensor THS2 includes a bandgap reference circuit BGR2 and multiple switches As. Signal line La couples temperature sensors THS1 and THS2. Signal line Lb couples temperature sensors THS1 and THS2.

[0212] Figure 22 and 23 This is a flowchart illustrating the test operation of the second test of the semiconductor device 1 according to the first embodiment.

[0213] like Figure 22 As shown, when the second test of semiconductor device 1 begins, the control unit CON controls the output voltage Vcc2a_Tr from terminal Tr. This voltage includes not only the voltage VCC2 input from terminal Tvcc but also a voltage drop (Zia+Zr). The voltage drop (Zia+Zr) is caused by signal line La and terminal Tr. The voltage drop (Zia+Zr) may include the voltage drop of wiring Lr.

[0214] Specifically, in step S61 (fifth measurement step), the control unit CON controls the branching of the wiring within the temperature sensor THS2, which is coupled at a point to the terminal Tvcc supplied with voltage VCC2, and supplies voltage to the signal line La and the wiring Lr via that point. As shown in step S62, a voltage Vcc2a_Tr, comprising the voltage drop (Zia+Zr) of the signal line La, the wiring Lr, and the terminal Tr, is output from the terminal Tr. The output voltage Vcc2a_Tr of the terminal Tr is VCC2-Zia-Zr. Voltage measurement is performed using high impedance.

[0215] Next, as Figure 23 As shown, the control unit CON controls the output voltage Vcc2a_Tt from terminal Tt. This voltage includes not only the voltage VCC2 input from terminal Tvcc but also a voltage drop (Zib+Zt). The voltage drop (Zib+Zt) is caused by the signal line Lb and terminal Tt. The voltage drop (Zib+Zt) can include the voltage drop of the wiring Lt.

[0216] Specifically, in step S71 (fifth measurement step), the control unit CON controls the switches As of temperature sensor THS1 and THS2 to branch the wiring within temperature sensor THS2, which is coupled to terminal Tvcc at the aforementioned point and supplied with voltage VCC2, and supplies voltage to signal line Lb and wiring Lt. As shown in step S72, the control unit CON outputs voltage Vcc2a_Tt from terminal Tt, which includes the voltage drop (Zib+Zt) between signal line Lb, wiring Lt, and terminal Tt. The output voltage Vcc2a_Tt of terminal Tt is VCC2-Zib-Zt. Voltage measurement is performed using high impedance.

[0217] Figure 24 This is for explaining the second test of the semiconductor device 1 according to the first embodiment. Figure 21 This is a diagram illustrating the test operations following the test operation shown. Figure 25 and 26 The illustration shows a second test of the semiconductor device 1 according to the first embodiment. Figure 22 and 23 The flowchart for the subsequent testing procedures (sixth measurement step). Figure 24 and 25 As shown, the control unit CON controls the switch As to output voltage Vcc2b_Tp from terminal Tp. This voltage includes not only the voltage VCC2 supplied from terminal Tvcc, but also a voltage drop (Zib+Zp). The voltage drop (Zib+Zp) is caused by the signal line Lb and terminal Tp. The voltage drop (Zib+Zp) can include the voltage drop of wiring Lp.

[0218] Specifically, in step S81, the control unit CON controls the switches As of temperature sensor THS2 and THS1 to branch the wiring within temperature sensor THS2, which is coupled to terminal Tvcc with voltage VCC2 at a designated point on the wiring, and supplies voltage to signal line Lb and wiring Lp via that point. As shown in step S82, the control unit CON controls the output voltage Vcc2b_Tp from terminal Tp, which includes the voltage drop (Zib+Zp) caused by signal line Lb, wiring Lp, and terminal Tp. The output voltage Vcc2b_Tp of terminal Tp is VCC2-Zib-Zp. Voltage measurement is performed with high impedance.

[0219] Next, as Figure 24 and 26As shown, the control unit CON controls the switch As to output voltage Vcc2b_Tt from terminal Tt. This voltage includes not only the voltage VCC2 supplied from terminal Tvcc, but also a voltage drop (Zia+Zt). The voltage drop (Zia+Zt) is caused by the signal line La and terminal Tt. The voltage drop (Zia+Zt) can include the voltage drop of wiring Lt.

[0220] Specifically, in step S91, the control unit CON controls the switches As of temperature sensors THS2 and THS1 to branch the wiring within temperature sensor THS2, which is coupled to the terminal Tvcc supplied with voltage VCC2 at a designated point on the wiring, and supplies voltage to signal line La and wiring Lt. In step S92, the control unit CON controls the output of voltage Vcc2b_Tt from terminal Tt, which includes the voltage drop (Zia+Zt) caused by signal line La, wiring Lt, and terminal Tt. The output voltage Vcc2b_Tt of terminal Tt is VCC2-Zia-Zt. Voltage measurement is performed with high impedance.

[0221] Figure 27 This is for explaining the second test of the semiconductor device 1 according to the first embodiment. Figure 24 This is a diagram illustrating the test operations following the test operation shown. Figure 28 The illustration shows a second test of the semiconductor device 1 according to the first embodiment. Figure 25 and 26 The flowchart for the subsequent testing procedures (seventh measurement step). (See attached flowchart.) Figure 27 and 28 As shown, in step S101, the test device ME receives a voltage from terminal Tt. The test device ME adjusts the voltage input from terminal Tt. The test device ME adjusts the input voltage to terminal Tt to output voltage Vcc2a_Tr from terminal Tr. When the measured voltage at terminal Tr becomes voltage Vcc2a_Tr, the voltage input from terminal Tt is defined as voltage Vtest2a_Tt.

[0222] Therefore, the control unit CON controls the output voltage VCC2a_Tr from terminal Tt, which includes not only the test voltage Vtest2a_Tt supplied from terminal Tt, but also voltage drops Zib and Zt. Voltage drop Zib is caused by signal line Lb, and voltage drop Zt is caused by terminal Tt.

[0223] In step S102, the following equations (3-1) to (3-3) are derived. Equation (3-2) is derived from step S62, and equation (3-3) is derived from step S72.

[0224] Vtest2a_Tt-Zib-Zt=VCC2 (3-1)

[0225] Vcc2a_Tr+Zia+Zr=VCC2 (3-2)

[0226] Vcc2a_Tt+Zib+Zt=VCC2 (3-3)

[0227] Here, Vtest2a_Tt is the input value, Vcc2a_Tr and Vcc2a_Tt are the measured values, and VCC2, Zia and Zib are unknown values. In step S103, the following equations (3-4) and (3-5) are derived from equations (3-1) to (3-3).

[0228] Zia+Zib=Vtest2a_Tt-Vcc2a_Tr-Zr-Zt (3-4)

[0229] Zib+Zt=(Vtest2a_Tt-Vcc2a_Tt) / 2 (3-5)

[0230] Calculate the voltage drop Zia of signal line La and the voltage drop Zib of signal line Lb using equations (3-4) and (3-5).

[0231] This section explains the leakage current occurring in the routing of signal lines La and Lb. The routing of signal lines La and Lb is configured with high impedance. Therefore, leakage current occurs in components such as switches As. For example, the arrangement of components such as switches As in the circuit is symmetrical when a voltage VCC2 is applied to terminal Tvcc in semiconductor device 1 and when a voltage Vtest2a_Tt is applied to terminal Tt. Therefore, the difference in voltage drop distribution along the test path due to the difference in test methods when applying voltage VCC2 to terminal Tvcc and when applying voltage Vtest2a_Tt to terminal Tt can be ignored.

[0232] Figure 29 This is for explaining the second test of the semiconductor device 1 according to the first embodiment. Figure 27 This is a diagram illustrating the test operations following the test operation shown. Figure 30 The illustration shows a second test of the semiconductor device 1 according to the first embodiment. Figure 28 The flowchart for the subsequent testing procedures (eighth measurement step). (See attached flowchart.) Figure 29 and 30As shown, in step S111, the control unit CON controls the switches As of temperature sensor THS2 and THS1, forming a trace from terminal Tt through wiring Lt, wiring La, and wiring Lb to terminal Tp. In this state, the test device ME receives a voltage from terminal Tt. The test device ME adjusts the voltage input from terminal Tt. The test device ME adjusts the input voltage to terminal Tt to output voltage Vcc2b_Tp from terminal Tp. When the measured voltage at terminal Tp becomes voltage Vcc2b_Tp, the voltage input from terminal Tt is defined as voltage Vtest2b_Tt.

[0233] Therefore, the control unit CON controls the output voltage VCC2b_Tp from terminal Tp, which includes the voltage drop Zia due to signal line La and the voltage drop Zt from terminal Tt to the test voltage Vtest2b_Tt from terminal Tt.

[0234] In step S112, the following equations (4-1) to (4-3) are derived. Equation (4-2) is derived from step S82, and equation (4-3) is derived from step S92.

[0235] Vtest2b_Tt-Zia-Zt=VCC2 (4-1)

[0236] Vcc2b_Tp+Zib+Zp=VCC2 (4-2)

[0237] Vcc2b_Tt+Zia+Zt=VCC2 (4-3)

[0238] Here, Vtest2b_Tt is the input value, VCC2b_Tp and VCC2b_Tt are the measured values, and VCC2, Zia and Zib are unknown values. In step S113, the following equations (4-4) and (4-5) are derived from equations (4-1) to (4-3).

[0239] Zia+Zib=Vtest2b_Tt-VCC2b_Tp-Zp-Zt (4-4)

[0240] Zia+Zt=(Vtest2b_Tt-VCC2b_Tt) / 2 (4-5)

[0241] Calculate the voltage drop Zia of signal line La and the voltage drop Zib of signal line Lb using equations (4-4) and (4-5).

[0242] Therefore, the second test allows for the determination of the voltage drop Zia on signal line La and the voltage drop Zib on signal line Lb.

[0243] Therefore, the semiconductor device 1 in this embodiment further includes a fifth to an eighth switching unit. The fifth switching unit (switch As10u) and the sixth switching unit (switch As20u) are coupled to the output of the temperature sensor THSu. The seventh switching unit (switches As30u, As31u, As12u, As32u, As21u) is coupled between signal line La and signal line Lb. The eighth switching unit (switch As11u) is coupled between the point where the power supply voltage to the temperature sensor THSu is supplied and the seventh switching unit.

[0244] The test method for this semiconductor device 1 includes the following fifth measurement step, sixth measurement step, seventh measurement step, eighth measurement step, and second calculation step. Here, the fifth measurement step includes the control unit CON controlling the third, seventh, and eighth switching units to measure the power supply voltage via signal line La using terminal Tr, and via signal line Lb using terminal Tt. The sixth measurement step includes the control unit CON controlling the third, fourth, and eighth switching units to measure the power supply voltage via signal line Lb using terminal Tp, and via signal line La using terminal Tt. The seventh measurement step includes the control unit CON controlling the third and seventh switching units to sequentially measure the voltage supplied to terminal Tt via signal lines La and Lb using terminal Tr. The eighth measurement step includes the control unit CON controlling the third and seventh switching units to sequentially measure the voltage supplied to terminal Tt via signal lines Lb and La using terminal Tp. The second calculation step includes calculating the voltage drop across signal lines La and Lb based on the voltages measured in the fifth through eighth measurement steps.

[0245] In the semiconductor device 1 of the first embodiment, signal lines La and Lb are provided, and the voltage drop across the signal wiring to each temperature sensor THS is measured by looping through a switch As provided within the temperature sensor. The voltage difference between the power supply voltage and the return voltage is measured using two different signal lines La and Lb. Since the voltage drops of the two signal lines La and Lb are not necessarily the same, a specific value of the voltage drop cannot be obtained simply by looping through the signal lines.

[0246] Therefore, in the second test, the voltage VCC supplied to each temperature sensor THS is input to two different signal lines La and Lb, and output to terminals Tr and Tp. The difference between terminals Tr and Tp can be obtained as the voltage drop difference between the two different signal lines La and Lb. Using the obtained difference and the voltage drop obtained by looping back the two different signal lines La and Lb, the individual voltage drops of signal lines La and Lb can be obtained.

[0247] In the second test described above, while showing the traces formed by the switches As of each temperature sensor, the following was used: Figures 31 to 33 The second test operation is explained in detail. To establish these traces, the test device ME outputs a test mode signal TMODE according to the test procedure. Then, the control unit CON controls the switch As based on the instructions from the test mode signal TMODE.

[0248] Consider the effects on the voltage drop Zia on signal line La and the voltage drop Zib on signal line Lb. The voltage drops Zia and Zib are the loads on signal lines La and Lb, which transmit analog signals near temperature sensor THS1, as well as on terminals Tr, Tp, and Tt. The total length of signal lines La and Lb includes the portions coupled to temperature sensors THS2 through THS4.

[0249] The signals from each temperature sensor THS and the signal lines La and Lb are transmitted near the location of each temperature sensor THS. The signals from the signal lines La and Lb between the temperature sensors THS are transmitted at a distance from the location of each temperature sensor THS.

[0250] Figure 31 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 22 and 23 The routing related to the test operation is shown. Figure 31 The trace shown is referred to as trace Fu. The control unit CON activates switches As311 and As211 of temperature sensor THS1, and switches As11u and As31u of temperature sensor THSu to form trace Fu. Furthermore, the control unit CON controls switch As301, connecting signal line La and terminal Tt. In other words, trace Fu is formed by the control unit CON's control of the third switching unit (switches As301, As311, As121, As321, As211), the seventh switching unit (switches As30u, As31u, As12u, As32u, As21u), and the eighth switching unit (switch As11u). Figure 31 In the diagram, the voltage drops Ziau and Zibu of signal lines La and Lb, resulting from the distances to the locations of each temperature sensor THSu, are shown as blocks of voltage drops Zvccu. Signal transmission primarily occurs between temperature sensor THS1 and its terminals Tr, Tp, and Tt, located near THS1. Therefore, the distances between temperature sensors THS1 and THSu (u=2, 3, 4…) are considered here.

[0251] like Figure 31As shown, the voltage at a predetermined location of the temperature sensor THSu is referred to as voltage VCCzau. The predetermined location is, for example, the position between switches As10u, As11u, and As31u of the temperature sensor THSu shown in the attached figure. Voltage VCCzau includes the voltage drop Zvccu. Figure 31 As shown, in the wiring Fu, voltage VCC is input to temperature sensor THS1 and temperature sensor THSu. The voltage VCC input to temperature sensor THS1 and temperature sensor THSu is measured by voltage measurement unit VMr via switch As11u, switch As31u, switch As311 and terminal Tr.

[0252] Additionally, the voltage measurement unit VMp measures the voltage VCC input to temperature sensors THS1 and THSu via signal line La and terminal Tp. Furthermore, the voltage VCC input to temperature sensors THS1 and THSu is measured by the voltage measurement unit VMt via switches As11u and As31u, signal line La, switch As301, and terminal Tt. Detailed descriptions will follow. It should be noted that temperature sensors THS2, THS3, and THS4 cannot be measured simultaneously but are measured individually.

[0253] The voltages at terminals Tr, Tp, and Tt are measured by the voltage measurement units VMr, VMp, and VMt of the test device ME. The following equation is derived from this result.

[0254] VCC = VCCzau + Zvccu (Equation 51)

[0255] VMr_Fus=VCCzau-Ziau-Zr (Equation 52)

[0256] VMp_Fus=VCCzau-Ziau-Zp (Equation 53)

[0257] VMt_Fus=VCCzau-Ziau-Zt (Equation 54)

[0258] VMr_E1-VMt_Ea1m=Zt+Zia-Zr (Equation 04)

[0259] Zr = Zt + Zia - VMr_E1 + VM_Ea1m

[0260] VMr_Fus, VMp_Fus, and VMt_Fus are measured values. Zr, Zp, and Zt are calculated through the above tests. VCCzau and Zia are unknown values.

[0261] Figure 32 This illustration shows a configuration diagram of the semiconductor device 1 according to the first embodiment, illustrating its relationship with... Figure 28and 30 The routing related to the test operation is shown. Figure 32 The trace shown is called a trace Fua. For example... Figure 32 As shown, in the trace Fua, the voltage measurement unit VMr measures the voltage input from the voltage output unit VFt via terminal Tt via terminal Tr. Furthermore, in the trace Fua, the voltage measurement unit VMp measures the voltage input from the voltage output unit VFt via terminal Tt via terminal Tp. To form this trace Fua, the control unit CON controls switch As301, causing signal line Lb and terminal Tt to be coupled. Additionally, the control unit CON activates switches As12u, As31u, Ass311, and As211 in response to the test mode signal TMODE from the test device ME. In other words, the trace Fua is formed by the control unit CON controlling the third switch unit (switches As301, As311, As121, As321, As211) and the seventh switch unit (switches As30u, As31u, As12u, As32u, As21u).

[0262] The voltage is input from the voltage output unit VFt of the test device ME. When the voltage measured by the voltage measurement unit VMr becomes voltage VMr_Fus, the voltage output by the voltage output unit VFt is called voltage VFt_Fuf. In this case, the voltage of the voltage output unit VMt is called voltage VMt_Fuf.

[0263] Furthermore, when the voltage measured by the voltage measurement unit VMp becomes voltage VMp_Fus, the voltage output by the voltage output unit VFt is called voltage VFt_Fuf. In this case, the voltage of the voltage output unit VMt is called voltage VMt_Fuf. Then, the following equation is obtained.

[0264] VMt_Fuf=VCCzau-Zibu-Zt (Equation 55)

[0265] The following equations are obtained from (Equation 55) - (Equation 54).

[0266] VMt_Fuf-VMt_Fus=Ziau-Zibu (Equation 56)

[0267] Subsequently, the control unit CON is formed. Figure 33 The routing is shown and tested. Figure 33 This illustration shows the configuration of the semiconductor device 1 according to the first embodiment, illustrating the wiring flow. For example... Figure 33As shown, in the wiring Fub, voltage VCCza1 is input to temperature sensors THS1 and THSu. The voltage measurement unit VMr measures the voltage VCCza1 input to temperature sensors THS1 and THSu via terminal Tr.

[0268] Additionally, voltage measurement unit VMp measures the voltage VCCza1 input to temperature sensors THS1 and THSu via signal line La and terminal Tp. Furthermore, voltage measurement unit VMt measures the voltage VCCza1 input to temperature sensors THS1 and THSu via signal line La and terminal Tt. To form this trace Fub, control unit CON activates switches As111, As311, and As31u based on the test mode signal TMODE from test device ME. Additionally, control unit CON controls switch As301, coupling signal line Lb and terminal Tt and activating switch As321. In other words, the trace Fub is formed by control unit CON controlling the third switch unit (switches As301, As311, As121, As321, As211), the fourth switch unit (switch As111), and the seventh switch unit (switches As30u, As31u, As12u, As32u, As21u). A detailed description will follow.

[0269] Voltages were measured at the terminals of voltage measurement units VMr, VMp, and VMt of the test device ME. The following equation was derived from the results.

[0270] via VMr_F1s=VCCza1-Zr

[0271] VCCza1=VMr_F1s+Zr (Equation 57)

[0272] via VMp_F1s=VCCza1-Ziau-Zibu-Zp

[0273] VCCza1-VMp_F1s-Zp=Ziau+Zibu (Equation 58)

[0274] via VMt_F1s=VCCza1-Ziau-Zibu-Zt

[0275] VCCza1-VMp_F1s-Zt=Ziau+Zibu (Equation 59)

[0276] By (Equation 58) + (Equation 56)

[0277] Ziau={(VCCza1-VMp_F1s-Zp)+(VMt_Fuf-VMt_Fus)} / 2 (Equation 60)

[0278] By (Equation 58) - (Equation 56)

[0279] Zibu={(VCCza1-VMp_F1s-Zp)-(VMt_Fuf-VMt_Fus)} / 2 (Equation 61)

[0280] By using equations (59), (60), and (61)

[0281] Zt=VCCza1-VMt_F1s-Ziau+Zibu (Equation 62)

[0282] Note that Ziau and Zibu need to be calculated for each temperature sensor THSu (u=2, 3, 4...) because the wiring distance between each temperature sensor THSu and temperature sensor THS1 is different.

[0283] Third Test

[0284] The third test is to understand the effect of the power supply voltage supplied to each temperature sensor THSu when using temperature sensor THS1 as a reference.

[0285] In the third test, voltages Vref2, Vptat2, Vref3, Vptat3, Vref4, and Vptat4 are output to terminals Tr and Tp using the two signal lines La and Lb between the temperature sensors THS of semiconductor device 1. The voltage difference obtained in the second test is used to correct the voltage at terminals Tr and Tp. The voltage values ​​Vref and Vptat of each temperature sensor THS are generated from GND, but the AD conversion value of Vptat based on Vref and the analog value using Vref and Vptat are not affected by the GND level offset. Using this, tests are performed to estimate the effect of the GND level difference due to the position of the temperature sensors THS.

[0286] Figure 34 The diagram illustrates the configuration of the semiconductor device 1 according to the first embodiment, showing the routing for measuring the reference voltage VREF and the PTAT voltage VPTAT of the temperature sensor THSu. Figure 34 The trace shown is called a trace Fuc. For example... Figure 34As shown, in path Fuc, the reference voltage VREFu output from the bandgap reference circuit BGRu of temperature sensor THSu is measured by voltage measurement unit VMr via terminal Tr. Furthermore, in trace Fuc, voltage measurement unit VMp measures the PTAT voltage VPTATu output from the bandgap reference circuit BGRu of temperature sensor THSu via terminal Tp. To form this trace Fuc, control unit CON turns on switches As10u, As20u, As31u, and As32u of temperature sensor THSu according to the test mode signal TMODE from test device ME. Additionally, control unit CON turns on switches As311 and As321 of temperature sensor THS1. Therefore, the following equation is obtained.

[0287] VREFu=VMr_VREFu+Zrα+Ziau (Equation 71)

[0288] VREFu=VMt_VREFu+Ztα+Ziau (Equation 72)

[0289] VPTATu=VMr_VPTATu+Zpα+Zibu (Equation 73)

[0290] Note that, although not shown in the attached figures, the ADC values ​​of PTATu / VREFu are also obtained in the temperature sensor THSu. Voltage drops Zrα, Zpα, Ziau, and Zibu were obtained through the first and second tests. Therefore, by using the measurements at the calibration terminals Tr and Tp of voltage drops Zrα, Zpα, Ziau, and Zibu, the reference voltage VREF and PTAT voltage VPTAT of the temperature sensor THSu can be accurately obtained. Thus, the deviation of the power supply voltage of the temperature sensor THSu when using temperature sensor THS1 as a reference can be estimated. Additionally, the rectangular blocks shown in the attached figures (signal lines between temperature sensors THS) can be applied not only to the same chip but also to signal lines between small chips.

[0291] Next, the control method for adjusting the temperature characteristics of the temperature sensor of the semiconductor device 1 in this embodiment will be explained. Figure 35 This is a flowchart illustrating a control method for the semiconductor device 1 according to a first embodiment. For example... Figure 35 As shown, the control method for semiconductor device 1 includes a temperature sensor THS, terminals Tr, Tp, Tt, and Tvcc, wherein terminal Tvcc is coupled to terminals Tr, Tp, and Tt via switch As, and the operation of switch As is controlled by control unit CON. Then, control unit CON controls switch As to perform the first to third tests (steps S1 to S3) described above.

[0292] Next, tests are performed to obtain the temperature characteristics of each temperature sensor. First, the voltages Vref1_H and Vref1_L generated by temperature sensor THS1 are converted by AD conversion using temperature sensor THS1. Furthermore, the reference voltage VREF of temperature sensor THS1 is measured at terminal Tr, and either voltage Vref1_H or Vref1_L generated by temperature sensor THS1 is measured at terminal Tp. (Step S4)

[0293] Next, the voltages Vref1_H and Vref1_L generated by temperature sensor THS1 are supplied to temperature sensor THSu. Temperature sensor THSu performs AD conversion on voltages Vref1_H and Vref1_L. Temperature sensor THSu measures the voltages VREF and Vptat at terminals Tr and Tp. (Step S5)

[0294] Based on the values ​​obtained from the first to the third test, the values ​​obtained in steps S4 and S5 are corrected to obtain the temperature characteristics of each temperature sensor THSu from temperature sensor THS1. Then, the temperature characteristics of temperature sensor THSu are adjusted based on the temperature characteristics of temperature sensor THS1.

[0295] Next, the effects of this embodiment will be explained. With the improvement of semiconductor device specifications, it is desirable for the temperature sensor THS, which measures the temperature of a semiconductor device, to have improved measurement accuracy. The voltage value indicating the temperature characteristics output from the temperature sensor THS within the semiconductor device is subjected to AD conversion and used within the semiconductor device's IP. Therefore, it is configured so that the user of the semiconductor device does not need to obtain the voltage value output from the temperature sensor THS from an external terminal.

[0296] The semiconductor device is provided with test terminals for measuring only the voltages VREF and VPTAT of the temperature sensor THS1 to perform temperature adjustment of the sensor's analog temperature characteristics. The analog temperature characteristics of temperature sensor THS1 are obtained based on the voltages measured using these test terminals. Temperature adjustment of the analog temperature characteristics of other temperature sensors THSu is then performed based on the temperature characteristics of temperature sensor THS1. However, the analog temperature characteristics of other temperature sensors THSu are not directly measured. Therefore, temperature adjustment is difficult, resulting in reduced yield.

[0297] In addition to terminals Tr and Tp for temperature adjustment of the temperature characteristics of temperature sensor THS1, the semiconductor device 1 in this embodiment is also provided with terminal Tt. Furthermore, terminal Tvcc, which receives a predetermined input voltage VCC, is coupled to terminals Tr, Tp, and Tt via switch As. Therefore, by controlling switch As, control unit CON can change the traces on which the voltage VCC input from terminal Tvcc and the test voltage input from terminal Tt are applied, thereby obtaining the voltage drop of each trace. As a result, the voltage measured at the test terminal can be corrected for the voltage drop, allowing accurate acquisition of the simulated temperature characteristics of each temperature sensor THS. Therefore, measurement accuracy can be improved.

[0298] Additionally, the semiconductor device 1 may include multiple temperature sensors THS and multiple signal lines La and Lb coupled to each temperature sensor THS. Therefore, the semiconductor device 1 can loop the test voltage input from terminal Tt back to terminals Tr and Tp, for example, via switch As. This allows the temperature characteristics of each temperature sensor THS to be output in analog form. Therefore, the measurement accuracy of the temperature sensors THS can be improved. In this case, measurement accuracy can be further improved because the voltage drop across signal lines La and Lb can be derived.

[0299] As a way to achieve a similar effect, it is conceivable to provide a dedicated analog terminal near each temperature sensor THSu to obtain the analog temperature characteristics of each temperature sensor THSu. However, providing a new dedicated analog terminal would increase costs. In contrast, in this embodiment, the analog temperature characteristics of each temperature sensor THSu can be obtained without increasing costs.

[0300] Modifications to the first embodiment

[0301] Temperature sensor THS1 and each of temperature sensors THS1 and THSu (including temperature sensor THS1 included in semiconductor device 1 of the first embodiment) are equipped with a bandgap reference circuit BGR and an AD converter ADC. However, according to the first embodiment, if the voltage drop of the wiring between each temperature sensor THS can be understood, the AD converter ADC can be provided only in one of the temperature sensors THS, while the remaining temperature sensors THS may not be equipped with an AD converter ADC. For example, the reference voltage Vref2 and PTAT voltage ptat2 output from temperature sensor THS2 can be supplied to temperature sensor THS1 via signal lines La and Lb. Temperature sensor THS1 equipped with an AD converter ADC performs AD conversion based on the reference voltage Vref2 and PTAT voltage ptat2 from temperature sensor THS2. At this time, since the voltage drop caused by signal lines La and Lb is known in advance through the test of the first embodiment, the temperature detected by temperature sensor THS2 can be appropriately obtained by performing AD conversion considering this voltage drop.

[0302] In temperature sensors, the area of ​​the analog-to-digital converter (ADC) is several times larger than that of the bandgap reference circuit (BGR). Therefore, in semiconductor devices equipped with multiple temperature sensors, reducing the number of ADCs can reduce chip area and thus cost.

[0303] Second Embodiment

[0304] Next, a second embodiment will be described. This embodiment is an extension of the application of the first embodiment. Figure 36 This diagram illustrates the configuration of semiconductor device 2 according to Embodiment 2. (As shown...) Figure 36As shown, the semiconductor device 2 in this embodiment also includes a terminal Ts and a power supply voltage monitoring circuit VMON. Terminal Ts is supplied with a power supply voltage generated by a power supply IC coupled to a substrate implementing a system-on-a-chip (SoC) or the like. The power supply voltage monitoring circuit VMON detects anomalies in the power supply voltage VDD by monitoring the power supply voltage VDD via terminal Ts. The power supply voltage monitoring circuit VMON performs an AD conversion based on a reference voltage Vref value VREF1 supplied to terminal Ts and a sensing voltage SENSEVDD. As a result, an AD conversion value is obtained as a result of the power supply voltage monitoring. In the second embodiment, terminal Ts is coupled to a terminal Tt on a substrate implementing a system-on-a-chip (SoC) or the like. The voltage applied to terminal Tt is called voltage Vtest. Voltage Vtest is equal to the sensing voltage SENSEVDD applied to terminal Ts. Temperature sensor THS1 performs an AD conversion based on the voltage Vtest from terminal Tt and the reference voltage Vref output by the bandgap reference circuit BGR within temperature sensor THS1. If the AD conversion result of the voltage Vtest from the temperature sensor THS1 is converted to be equivalent to the power supply voltage monitoring result, then it can be confirmed that the power supply voltage monitoring circuit VMON is operating correctly. The specific usage method is described below.

[0305] During preparation, a table is prepared in advance for converting the AD conversion values ​​(digital values) obtained by converting the voltage values ​​VREF1 and Vtest AD to the sensed voltage SENSEVDD. The preparation methods include the following two approaches.

[0306] (1) Trim the conversion table obtained during production testing. Here, trimming means, for example, writing to the fuse bit. (2) Trim the conversion table obtained during initial testing after customer field assembly within the semiconductor device 2 (such as a chip), taking into account the load of the substrate wiring. Additionally, record it in the memory of the customer system.

[0307] The process during use is as follows.

[0308] (I) In the aging and degradation verification test of the temperature sensor THS, it was confirmed that the temperature characteristics of the temperature sensor THS have not deteriorated. (II) Next, an AD conversion was performed on the reference voltage Vref, voltage VREF (VREF1), and voltage Vtest to obtain the voltage value of the sensed value SENSEVDD. (III) Next, the test function of the monitor VMON was used to test whether the monitor VMON outputs an abnormal voltage before and after the voltage value of the sensed value SENSEVDD. This completed the performance test of the monitor VMON.

[0309] According to this embodiment, anomalies in the power supply voltage VDD can be easily detected by monitoring the power supply voltage VDD in the semiconductor device 2.

[0310] Third Embodiment

[0311] Next, as a third embodiment, an application example of the first embodiment will be described. Figure 37 This is a diagram illustrating the configuration of semiconductor device 3 according to the third embodiment. Figure 38 This diagram illustrates the voltage divider ZR of the resistors in the semiconductor device 3 according to the third embodiment. Figure 37 and 38 As shown, semiconductor device 3 includes a resistor divider ZR. The resistor divider ZR includes resistors Z0 to Z3 that cause multiple voltage drops and a switch SEL. By switching the switch SEL, resistors Z0 to Z3 can be selected.

[0312] In the first embodiment described above, a test using voltage VCC is performed. Since wiring traces such as signal lines La and Lb are configured with high impedance, leakage current will occur due to voltage drops from components such as switches As. Therefore, the amount of voltage drop will vary depending on the magnitude of the voltage applied to the wiring trace.

[0313] The guaranteed operating range of temperature sensors THS1 to THS4 corresponds to the normal operating temperature range of semiconductor device 3. For example, assume a temperature range of -40 degrees to 125 degrees. In this case, the voltage Vptat of the PTAT voltage ptat is generated from the voltage VCC by the resistor divider ZR. Here, the PTAT voltage ptat corresponding to 125 degrees is referred to as voltage Vptat_H, and the PTAP voltage ptat corresponding to -40 degrees is referred to as voltage Vptat_L.

[0314] The voltage between Z0 and Z1 is equal to the reference voltage Vref.

[0315] The voltage between Z1 and Z2 is the voltage of Vptat_H.

[0316] The voltage between Z2 and Z3 is the voltage of Vptat_L.

[0317] If the amount of voltage drop is not linearly related to the voltage applied to the wiring trace, the change in voltage drop can be understood by increasing the number of resistors used to divide the voltage.

[0318] This is used as voltages VCC1 and VCC2, and the number of voltages divided by the resistor is tested using switch SEL.

[0319] In the above tests, when the reference voltage Vref of the bandgap reference circuit BGR and the voltage ptat of PTAT are used for each actual temperature sensor THS, the values ​​measured at terminals Tr and Tp are corrected to accurately estimate the voltage value of the bandgap reference voltage BGR used during AD conversion.

[0320] Figure 39 This is a block diagram illustrating the control unit CON in semiconductor devices 1 to 3 according to the first to third embodiments. Figure 39 As shown, the control unit CON may include information processing devices such as microcomputers. The control unit CON may also include a processor PRC, a memory MMR, a storage device STR, and an interface IF.

[0321] The storage device STR stores programs describing the procedures executed by each configuration of the control unit CON. The processor PRC reads the program from the storage device STR into the memory MMR and executes it. This allows the processor PRC to implement the functions of each configuration in the control unit CON. The interface IF connects to other parts and performs data input and output.

[0322] Each configuration of the control unit CON can be implemented using dedicated hardware. Additionally, some or all components can be implemented using general-purpose or dedicated circuitry, a processor PRC, or a combination thereof. These can be configured using a single chip or multiple chips connected via a bus. Some or all components can be implemented using a combination of the aforementioned circuitry and programs. The processor PRC can be a CPU, GPU, FPGA, quantum processor (quantum computer control chip), etc.

[0323] If some or all of the components of the control unit CON are implemented by multiple information processing devices or circuits, these devices or circuits can be arranged centrally or distributed. For example, the information processing devices or circuits can be implemented by connecting them separately via a client-server system, a cloud computing system, or a communication network NW. The functionality of the control unit CON can also be provided in a SaaS (Software as a Service) format.

[0324] While this disclosure has been specifically described based on embodiments, it should be understood that this disclosure is not limited to comparative examples, embodiments, and modified examples, and various modifications can be made without departing from its spirit. For example, combinations of the configurations of comparative examples, embodiments 1 to 3, and comparative examples are also within the scope of the technical concept of the embodiments. Additionally, the following control methods for semiconductor devices are also within the scope of the technical concept of the embodiments. (Clause A)

[0325] Clause A1. A method of controlling a semiconductor device having a first temperature sensor including a first terminal to a fourth terminal and a first switching unit to a fourth switching unit, the first temperature sensor having a bandgap reference circuit, the first switching unit being configured to output a reference voltage generated based on the output of the bandgap reference circuit from the first terminal, a second switching unit being configured to output a PTAT voltage generated based on the output of the bandgap reference circuit, a third switching unit being configured to be coupled between the third terminal and the first terminal or the second terminal, and a fourth switching unit being configured to output a predetermined voltage supplied to the first temperature sensor from the first terminal to the third terminal, the method comprising:

[0326] The operation of the first to fourth switch units is controlled by the control unit.

[0327] Clause A2. The method according to Clause A1, wherein the semiconductor device includes a first wiring connecting a first temperature sensor and a first terminal, a second wiring connecting the first temperature sensor and a second terminal, a third wiring connecting the first temperature sensor and a third terminal, and a fourth wiring connecting the first temperature sensor and a fourth terminal, wherein the fourth wiring is connected to the first wiring, the second wiring and the third wiring via a fourth switching unit.

[0328] Clause A3. The method according to Clause A1, wherein the first temperature sensor includes a bandgap reference circuit, a first terminal is connected to output a reference voltage of the bandgap reference circuit, and a second terminal is connected to output a PTAT voltage of the bandgap reference circuit.

[0329] Clause A4. The method according to Clause A1, wherein the control unit controls the output voltage from the first terminal, which includes, in addition to the voltage input from the fourth terminal, a first voltage drop caused by the first terminal.

[0330] Clause A5. The method according to Clause A1, wherein the control unit controls the output voltage from the second terminal, which includes, in addition to the voltage input from the fourth terminal, a second voltage drop caused by the second terminal.

[0331] Clause A6. The method according to Clause A1, wherein the control unit controls the output voltage from the third terminal, which includes, in addition to the voltage input from the fourth terminal, a third voltage drop caused by the third terminal.

[0332] Clause A7. The method according to Clause A1, wherein the control unit controls the output voltage from the first terminal, which includes, in addition to the first test voltage input from the third terminal, a third voltage drop caused by the third terminal.

[0333] Clause A8. The method according to Clause A1, wherein the control unit controls the output voltage from the second terminal, which includes, in addition to the second test voltage input from the third terminal, a third voltage drop caused by the third terminal.

[0334] Clause A9. The method according to Clause A1, wherein the semiconductor device further includes a second temperature sensor, a first signal line coupling the first temperature sensor and the second temperature sensor, and a second signal line coupling the first temperature sensor and the second temperature sensor, the second temperature sensor including a fifth to an eighth switching unit, wherein a control unit controls the operation of the fifth to eighth switching units.

[0335] Clause A10. The method according to Clause A9, wherein the control unit controls the output voltage from the first terminal, which includes, in addition to the voltage input from the fourth terminal, a fourth voltage drop caused by the first signal line and the first terminal.

[0336] Clause A11. The method according to Clause A9, wherein the control unit controls the output voltage from the third terminal, which includes, in addition to the voltage input from the fourth terminal, a fifth voltage drop caused by the second signal line and the third terminal.

[0337] Clause A12. The method according to Clause A9, wherein the control unit controls the output voltage from the second terminal, which includes, in addition to the voltage input from the fourth terminal, a sixth voltage drop caused by the second signal line and the second terminal.

[0338] Clause A13. The method according to Clause A19, wherein the control unit controls the output voltage from the third terminal, which includes, in addition to the voltage input from the fourth terminal, a seventh voltage drop caused by the first signal line and the third terminal.

[0339] Clause A14. The method according to Clause A9, wherein the control unit controls the output voltage from the first terminal, the voltage including a third test voltage input from the third terminal, an eighth voltage drop caused by the second signal line, and a third voltage drop caused by the third terminal.

[0340] Clause A15. The method according to Clause A9, wherein the control unit controls the output voltage from the second terminal, which includes, in addition to the fourth test voltage input from the third terminal, a ninth voltage drop caused by the first signal line and a third voltage drop caused by the third terminal.

[0341] The following semiconductor device control program, which executes a semiconductor device control method on a computer, is also within the scope of the technical concept of this embodiment. Such a program can be stored and provided to a computer using various types of non-transient computer-readable media. Non-transient computer-readable media include various types of tangible storage media. Examples of non-transient computer-readable media include magnetic recording media (e.g., floppy disks, magnetic tapes, hard disk drives), magneto-optical recording media (e.g., magneto-optical disks), CD-ROMs (read-only memories), CD-Rs, CD-R / Ws, and solid-state memories (e.g., mask ROMs, PROMs (programmable ROMs), EPROMs (erasable PROMs), flash memory ROMs, and RAMs (random access memory)). The program can also be supplied to a computer via various types of transient computer-readable media. Examples of transient computer-readable media include electrical signals, optical signals, and electromagnetic waves. Transient computer-readable media can provide the program to a computer via wired or wireless communication paths (such as wires and optical fibers). (Clause B)

[0342] Clause B1. A semiconductor device control program for controlling a semiconductor device having a first temperature sensor including first terminals to fourth terminals and first to fourth switching units, the first temperature sensor having a bandgap reference circuit, the first switching unit being configured to output a reference voltage generated based on the output of the bandgap reference circuit from the first terminal, the second switching unit being configured to output a PTAT voltage generated based on the output of the bandgap reference circuit, the third switching unit being configured to be connected between the third terminal and either the first or second terminal, and the fourth switching unit being configured to output a predetermined voltage supplied to the first temperature sensor from the first terminal to the third terminal, the semiconductor device control program causing the semiconductor device to perform the following steps:

[0343] Control the operation of the first to the fourth switching units.

[0344] Clause B2. The semiconductor device control procedure according to Clause B1, wherein the semiconductor device includes a first wiring connecting a first temperature sensor and a first terminal, a second wiring connecting the first temperature sensor and a second terminal, a third wiring connecting the first temperature sensor and a third terminal, and a fourth wiring connecting the first temperature sensor and a fourth terminal, wherein the fourth wiring is connected to the first wiring, the second wiring, and the third wiring via a predetermined switch.

[0345] Clause B3. The semiconductor device control procedure according to Clause B1, wherein the first temperature sensor includes a bandgap reference circuit, a first terminal is connected to output a reference voltage of the bandgap reference circuit, and a second terminal is connected to output the PTAT voltage of the bandgap reference circuit.

[0346] Clause B4. The semiconductor device control procedure pursuant to Clause B1, wherein control includes outputting a voltage from a first terminal, the voltage including, in addition to the voltage input from a fourth terminal, a first voltage drop caused by the first terminal.

[0347] Clause B5. The semiconductor device control procedure pursuant to Clause B1, wherein control includes outputting a voltage from a second terminal, which includes, in addition to the voltage input from a fourth terminal, a second voltage drop caused by the second terminal.

[0348] Clause B6. The semiconductor device control procedure pursuant to Clause B1, wherein control includes outputting a voltage from a third terminal, which includes, in addition to the voltage input from the fourth terminal, a third voltage drop caused by the third terminal.

[0349] Clause B7. The semiconductor device control procedure pursuant to Clause B1, wherein the control includes outputting a voltage from a first terminal, which includes, in addition to a first test voltage input from a third terminal, a third voltage drop caused by the third terminal.

[0350] Clause B8. The semiconductor device control procedure pursuant to Clause B1, wherein the control includes outputting a voltage from a second terminal, which includes, in addition to a second test voltage input from a third terminal, a third voltage drop caused by the third terminal.

[0351] Clause B9. The semiconductor device control procedure pursuant to Clause B1, wherein the semiconductor device further includes a second temperature sensor, a first signal line coupling the first temperature sensor and the second temperature sensor, and a second signal line coupling the first temperature sensor and the second temperature sensor, the second temperature sensor including a plurality of switches.

[0352] Clause B10. A semiconductor device control procedure pursuant to Clause B9, wherein control includes outputting a voltage from a first terminal, the voltage including, in addition to, the voltage input from a fourth terminal, a fourth voltage drop caused by the first signal line and the first terminal.

[0353] Clause B11. The semiconductor device control procedure pursuant to Clause B9, wherein control includes outputting a voltage from a third terminal, which includes, in addition to the voltage input from a fourth terminal, a fifth voltage drop caused by the second signal line and the third terminal.

[0354] Clause B12. The semiconductor device control procedure pursuant to Clause B9, wherein control includes outputting a voltage from a second terminal, which includes, in addition to the voltage input from a fourth terminal, a sixth voltage drop caused by the second signal line and the second terminal.

[0355] Clause B13. The semiconductor device control procedure pursuant to Clause B9, wherein control includes outputting a voltage from a third terminal, which includes, in addition to the voltage input from a fourth terminal, a seventh voltage drop caused by the first signal line and the third terminal.

[0356] Clause B14. The semiconductor device control procedure pursuant to Clause B9, wherein control includes outputting a voltage from a first terminal, which includes, in addition to a third test voltage input from a third terminal, an eighth voltage drop caused by a second signal line and a third voltage drop caused by the third terminal.

[0357] Clause B15. A semiconductor device control procedure pursuant to Clause B9, wherein control includes outputting a voltage from a second terminal, which includes, in addition to a fourth test voltage input from a third terminal, a ninth voltage drop caused by a first signal line and a third voltage drop caused by the third terminal. (Clause C)

[0358] Clause C1. A method for testing a semiconductor device, the semiconductor device comprising a first temperature sensor, a control unit for controlling the first temperature sensor, and first terminals to third terminals, the first temperature sensor comprising a first bandgap reference circuit, a first analog-to-digital converter circuit, a first switching unit, a second switching unit, a third switching unit, a fourth switching unit, and a control unit, the first bandgap reference circuit being configured to output a first reference voltage and a first detection voltage having a predominantly linear temperature dependence, the first analog-to-digital converter circuit being configured to convert the first detection voltage from an analog value to a digital value based on the first reference voltage, the first switching unit being provided to output the first reference voltage from the first terminal, the second switching unit being provided to output the first detection voltage from the second terminal, the third switching unit being provided between the third terminal and the first and second terminals, and the fourth switching unit being provided to output a power supply voltage to the first terminal or the third terminal, and the control unit being provided to control the first to fourth switching units, the testing method comprising:

[0359] In the first measurement step, the third and fourth switching units are controlled to output a power supply voltage from the first terminal and obtain a first measurement voltage at the first terminal.

[0360] The second measurement step involves controlling the third and fourth switching units to output a power supply voltage from the second terminal and obtain a second measurement voltage at the second terminal.

[0361] The third measurement step includes controlling a third switching unit to output a voltage supplied to the third terminal from the first terminal, and measuring a third measurement voltage at the third terminal when a first measurement voltage is obtained from the first terminal;

[0362] The fourth measurement step includes controlling the third switching unit to output a voltage supplied from the second terminal to the third terminal, and measuring the third measurement voltage at the third terminal when a second measurement voltage is obtained from the second terminal.

[0363] The measurement error of the first terminal is calculated based on the first and third measurement voltages, and the measurement error of the second terminal is calculated based on the second and fourth measurement voltages.

[0364] Clause C2. The test method according to Clause C1, wherein the semiconductor device further includes a second temperature sensor and first and second signal lines provided for coupling the first and second temperature sensors to each other and to a third switching unit.

[0365] The second temperature sensor includes a second bandgap reference circuit that outputs a second reference voltage and a second detection voltage with a predominantly linear temperature dependence; a second analog-to-digital converter circuit that converts the second detection voltage from an analog value to a digital value based on the second reference voltage; a fifth switching unit connected to the second reference voltage output of the second temperature sensor; a sixth switching unit connected to the second detection voltage output of the second temperature sensor; a seventh switching unit connected between a first signal line and a second signal line; and an eighth switching unit connected between the power supply voltage terminal and the seventh switching unit.

[0366] The testing methods include:

[0367] The fifth measurement step involves controlling the third, seventh, and eighth switching units to measure the power supply voltage at the first terminal via the first signal line, and to measure the power supply voltage at the third terminal via the second signal line.

[0368] The sixth measurement step involves controlling the third, seventh, and eighth switching units to measure the power supply voltage at the second terminal via the second signal line, and to measure the power supply voltage at the third terminal via the first signal line.

[0369] The seventh measurement step involves controlling the third and seventh switching units to sequentially measure the voltage supplied from the first terminal to the third terminal via the first and second signal lines.

[0370] The eighth measurement step involves controlling the third and seventh switching units to sequentially measure the voltage supplied from the second terminal to the third terminal via the second signal line and the first signal line.

[0371] The second calculation step calculates the voltage drop between the first and second signal lines based on the voltages measured in the fifth to eighth measurement steps.

Claims

1. A semiconductor device, comprising: First terminal, second terminal, third terminal, and fourth terminal; as well as The first temperature sensor includes a first switching unit, a second switching unit, a third switching unit, and a fourth switching unit. The first temperature sensor includes a bandgap reference circuit. The first switching unit is configured to output a reference voltage generated based on the output of the bandgap reference circuit from the first terminal. The second switching unit is configured to output a PTAT voltage generated based on the output of the bandgap reference circuit. The third switching unit is configured to be coupled between the third terminal and at least one of the first terminal and the second terminal, and The fourth switching unit is configured to output a predetermined voltage supplied to the first temperature sensor from the first terminal, the second terminal and the third terminal.

2. The semiconductor device according to claim 1, further comprising: The first wiring connects the first temperature sensor and the first terminal; The second wiring connects the first temperature sensor and the second terminal; The third wiring connects the first temperature sensor and the third terminal; as well as The fourth wiring connects the first temperature sensor and the fourth terminal. The fourth wiring is coupled to the first wiring, the second wiring and the third wiring via the fourth switching unit.

3. The semiconductor device according to claim 1, The first terminal can output the reference voltage, and the second terminal can output the PTAT voltage.

4. The semiconductor device according to claim 1, further comprising: A control unit is used to control the operation of the first switching unit to the fourth switching unit.

5. The semiconductor device of claim 4, wherein the control unit controls the output voltage from the first terminal, the voltage including, in addition to the voltage input from the fourth terminal, a first voltage drop caused by the first terminal.

6. The semiconductor device of claim 4, wherein the control unit controls the output voltage from the second terminal, the voltage including, in addition to the voltage input from the fourth terminal, a second voltage drop caused by the second terminal.

7. The semiconductor device of claim 4, wherein the control unit controls the output voltage from the third terminal, the voltage including, in addition to the voltage input from the fourth terminal, a third voltage drop caused by the third terminal.

8. The semiconductor device of claim 4, wherein the control unit controls the output voltage from the first terminal, the voltage including, in addition to the first test voltage input from the third terminal, a third voltage drop caused by the third terminal.

9. The semiconductor device of claim 4, wherein the control unit controls the output voltage from the second terminal, the voltage including, in addition to the second test voltage input from the third terminal, a third voltage drop caused by the third terminal.

10. The semiconductor device according to claim 1, further comprising: The second temperature sensor includes the fifth to eighth switching units. The first signal line couples the first temperature sensor and the second temperature sensor. The second signal line couples the first temperature sensor and the second temperature sensor, and The control unit is used to control the operation of the first to the eighth switching units. The second temperature sensor has a second bandgap reference circuit. The fifth switching unit is provided to output a second reference voltage generated based on the output of the second bandgap reference circuit from the first terminal, the sixth switching unit is provided to output a second PTAT voltage generated based on the output of the second bandgap reference circuit, the seventh switching unit is provided to be connected between the third terminal and the first terminal or the second terminal, and the eighth switching unit is provided to output a predetermined voltage supplied to the second temperature sensor from the first terminal to the third terminal.

11. The semiconductor device of claim 10, wherein the control unit controls the output voltage from the first terminal, the voltage including, in addition to the voltage input from the fourth terminal, a fourth voltage drop caused by the first signal line and the first terminal.

12. The semiconductor device of claim 10, wherein the control unit controls the output voltage from the third terminal, the voltage including, in addition to the voltage input from the fourth terminal, a fifth voltage drop caused by the second signal line and the third terminal.

13. The semiconductor device of claim 10, wherein the control unit controls the output voltage from the second terminal, the voltage including, in addition to the voltage input from the fourth terminal, a sixth voltage drop caused by the second signal line and the second terminal.

14. The semiconductor device of claim 10, wherein the control unit controls the output voltage from the third terminal, the voltage including, in addition to the voltage input from the fourth terminal, a seventh voltage drop caused by the first signal line and the third terminal.

15. The semiconductor device of claim 10, wherein the control unit controls the output voltage from the first terminal, the voltage including, in addition to the third test voltage input from the third terminal, an eighth voltage drop caused by the second signal line and a third voltage drop caused by the third terminal.

16. The semiconductor device of claim 10, wherein the control unit controls the output voltage from the second terminal, the voltage including, in addition to a fourth test voltage input from the third terminal, a ninth voltage drop caused by the first signal line and a third voltage drop caused by the third terminal.

17. A method of controlling a semiconductor device, the semiconductor device including a first terminal to a fourth terminal and a first temperature sensor, the first temperature sensor including a bandgap reference circuit and a first switching unit to a fourth switching unit, the first switching unit being configured to output a reference voltage generated based on the output of the bandgap reference circuit from the first terminal, a second switching unit being configured to output a PTAT voltage generated based on the output of the bandgap reference circuit, a third switching unit being configured to be connected between the third terminal and the first terminal or the second terminal, and the fourth switching unit being configured to output a predetermined voltage supplied to the first temperature sensor from the first terminal to the third terminal, the method of controlling the semiconductor device comprising: The operation of the first switching unit to the fourth switching unit is controlled by the control unit.

18. A control program for a semiconductor device, the semiconductor device including a first terminal to a fourth terminal and a first temperature sensor, the first temperature sensor including a bandgap reference circuit and a first switching unit to a fourth switching unit, the first switching unit being configured to output a reference voltage generated based on the output of the bandgap reference circuit from the first terminal, a second switching unit being configured to output a PTAT voltage generated based on the output of the bandgap reference circuit, a third switching unit being configured to be connected between the third terminal and the first terminal or the second terminal, and the fourth switching unit being configured to output a predetermined voltage supplied to the first temperature sensor from the first terminal to the third terminal, the control program of the semiconductor device causing the semiconductor device to perform the following steps: Control the operation of the first switching unit to the fourth switching unit.

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