A radiation hardened field effect transistor module
By using multi-chip parallel technology and metal hermetic packaging, combined with a tungsten copper base plate and BeO heat sink, the problems of low current density, high cost and poor heat dissipation of traditional field-effect transistor modules are solved, and high reliability and radiation resistance are improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
- Filing Date
- 2026-04-24
- Publication Date
- 2026-07-31
AI Technical Summary
Traditional field-effect transistor modules cannot meet the requirements of radiation resistance, high reliability, and low cost. They suffer from problems such as low current density, the introduction of many parasitic parameters through external lead connections, and poor heat dissipation.
Employing multi-chip parallel technology, metal hermetic packaging, internal potting and inert gas filling, combined with a tungsten copper substrate and BeO heat sink design, the device enhances its overcurrent capability, improves gate oscillation and heat dissipation performance, and prevents single-particle burn-out and electrode oxidation.
It significantly improves the reliability and overcurrent capability of the device, enhances its radiation resistance, ensures stable operation in high-power radiation environments, and meets high withstand voltage and electromagnetic shielding requirements.
Smart Images
Figure CN122497374A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor power device technology. Background Technology
[0002] A radiation-hardened field-effect transistor (FET) module is a power semiconductor device that encapsulates multiple radiation-hardened FET chips on an insulating substrate according to a specific circuit topology. Its core function is to realize the switching characteristics of the circuit using the gate switches in the chips. The module design mainly achieves chip interconnection through sintering and wire bonding processes, and solves high-voltage insulation and heat dissipation problems through ceramic copper-clad laminate, substrate, and internal potting.
[0003] Currently, traditional field-effect transistor modules are generally packaged in plastic shells, which cannot meet the technical requirements of radiation resistance and high reliability. In the selection of aerospace components, small devices with hermetically sealed metal packages are generally chosen, and the overcurrent capacity is increased by connecting them in parallel. However, the above solutions have disadvantages such as low current density, high cost, long external lead connections that introduce more parasitic parameters, and difficulty in designing heat dissipation solutions, making it difficult to meet the high reliability and low cost requirements of aerospace products. Summary of the Invention
[0004] The purpose of this invention is to provide a radiation-resistant field-effect transistor module that solves the technical problems of low current density, high cost, long external lead connections introducing many parasitic parameters, and difficulty in formulating heat dissipation solutions in the prior art.
[0005] To address the aforementioned technical problems, this invention provides a radiation-resistant field-effect transistor module, comprising a tungsten-copper chassis housing, the chassis of which is connected to a ceramic copper-clad laminate via a tin-silver solder pad one; at least one field-effect transistor chip is connected to the end face of the ceramic copper-clad laminate via a tin-silver solder pad six, and at least one resistor is connected via a tin-silver solder pad seven; multiple lead ceramic rings are provided on the wall of the housing, and a cover plate is sealed to the upper end face of the wall; at least two lead ceramic rings are connected to an electrode plate one via a tin-silver solder pad two, the electrode plate one is connected to the ceramic copper-clad laminate via a tin-silver solder pad three, and at least one lead ceramic ring is connected to an electrode plate two via a tin-silver solder pad four, the electrode plate two is connected to the ceramic copper-clad laminate via a tin-silver solder pad five; the housing, the ceramic copper-clad laminate, and the field-effect transistor chip are connected by multiple aluminum wires, and the internal cavity of the housing is filled with silicone rubber.
[0006] The silicone rubber covers the ceramic copper-clad laminate, the field-effect transistor chip, the resistor, the aluminum wire, electrode sheet one, and electrode sheet two. The material of electrode sheet one and electrode sheet two is oxygen-free copper strip, and the material of silicone rubber is white silicone rubber.
[0007] The chassis material of the outer shell is WCu12 alloy, the wall material is 4J50 alloy, the lead ceramic ring material is Kovar copper-clad, and the surface of the outer shell is plated with a nickel layer with a thickness of 2μm~10μm.
[0008] The chassis of the outer shell is provided with a substrate and a heat sink in sequence, and the heat sink is welded to a ceramic copper-clad plate by tin-silver solder sheets.
[0009] The heat sink material is BeO, and the substrate material is CMC.
[0010] The tin-silver solder sheet 1, tin-silver solder sheet 2, tin-silver solder sheet 3, tin-silver solder sheet 4, tin-silver solder sheet 5, tin-silver solder sheet 6, and tin-silver solder sheet 7 are all made of Sn96.5Ag3.5, with a width of 0.1mm~50mm, a length of 0.1mm~50mm, and a thickness of 0.02mm~0.5mm.
[0011] The ceramic clad copper plate has Si3N4, AlN or Al2O3 as the ceramic material and a thickness of 0.1mm to 1mm; the surface copper cladding material of the ceramic clad copper plate is high-purity oxygen-free copper and has a thickness of 0.1mm to 1mm.
[0012] The upper surface of the ceramic copper-clad laminate is also provided with a solder resist layer. The material of the solder resist layer is resin-based solder resist ink, with a width of 0.01mm to 5mm and a thickness of 0.001mm to 0.05mm.
[0013] The field-effect transistor chip is a silicon-based radiation-resistant chip with a length of 1mm to 20mm, a width of 1mm to 20mm, a thickness of 100μm to 380μm, a single-chip voltage range of 60V to 1200V, and a single-chip overcurrent capability of 1A to 200A. The resistor is packaged in 0603, 0805, or 1206 form factors, with a resistance value of 1Ω to 10Ω. The aluminum wire is made of pure aluminum with a wire diameter of 100μm to 500μm. The cover plate is made of 4J29 alloy, with a nickel layer of 2μm to 10μm thickness plated on its surface.
[0014] The number of field-effect transistor chips is three, and each field-effect transistor chip is respectively equipped with a resistor as a gate resistor.
[0015] Compared to existing technologies, this invention employs multi-chip parallel technology, which increases the device's overcurrent capability while reducing heat flux density and on-resistance. Furthermore, each chip has its own gate resistor to improve gate oscillation and ensure current sharing, thus significantly enhancing reliability. Simultaneously, the hermetic metal encapsulation, combined with internal potting and inert gas filling, effectively blocks direct bombardment from cosmic rays such as alpha particles and protons, preventing single-particle burn-out or gate breakdown. It also provides electromagnetic shielding, preventing electrode oxidation and arcing under high-temperature or radiation environments, and achieving an insulation withstand voltage exceeding 3000V. In addition, the use of a tungsten-copper substrate with integrated BeO heat sink provides excellent heat dissipation channels, ensuring long-term stable operation in high-power radiation environments.
[0016] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention are described below. Attached Figure Description
[0017] One or more embodiments are illustrated by way of example with reference numerals in the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are denoted as similar elements. Unless otherwise stated, the figures in the drawings are not to be limited by scale.
[0018] Figure 1 This is a schematic diagram of the structure of the present invention; Figure 2 yes Figure 1 Cross-sectional view at point AA; Figure 3 yes Figure 1 Rear view of the inner shell; Figure 4 yes Figure 1 Front view of the inner shell; Figure 5 yes Figure 1 Top view of the inner shell; Figure 6 yes Figure 2 A schematic diagram of the structure of the first intermediate electrode plate; Figure 7 yes Figure 2 Schematic diagram of the structure of the second intermediate electrode plate; Figure 8 yes Figure 1 Schematic diagram of the middle cover plate; Figure 9 yes Figure 8 Cross-sectional view at point AA; Figure 10 yes Figure 2A schematic diagram of the structure of a copper-clad ceramic plate.
[0019] In the diagram: 1-Outer shell, 2-Tin silver solder sheet one, 3-Ceramic copper clad laminate, 4-Solder resist layer, 5-Field effect transistor chip, 6-Resistor, 7-Aluminum wire, 8-Electrode sheet one, 9-Tin silver solder sheet two, 10-Tin silver solder sheet three, 11-Electrode sheet two, 12-Tin silver solder sheet four, 13-Tin silver solder sheet five, 14-Silicone rubber, 15-Cover plate, 16-Tin silver solder sheet six, 17-Tin silver solder sheet seven. Detailed Implementation
[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the embodiments of this invention will be described in detail below with reference to the accompanying drawings. However, those skilled in the art will understand that many technical details are presented in the embodiments of this invention to facilitate a better understanding of this application. However, the technical solutions claimed in this application can be implemented even without these technical details and various variations and modifications based on the following embodiments. The division of the following embodiments is for ease of description and should not constitute any limitation on the specific implementation of this invention. The embodiments can be combined with and referenced by each other without contradiction.
[0021] like Figures 1-10 The radiation-resistant field-effect transistor module shown includes a housing 1 with a tungsten-copper chassis. A ceramic copper-clad laminate 3 is connected to the chassis of the housing 1 via a tin-silver solder pad 2. At least one field-effect transistor chip 5 is connected to the end face of the ceramic copper-clad laminate 3 via a tin-silver solder pad 6 16, and at least one resistor 6 is connected via a tin-silver solder pad 7 17. Multiple lead ceramic rings are provided on the wall of the housing 1, and a cover plate 15 is sealed to the upper end face of the wall. At least two lead ceramic rings are connected to electrode plates 8 via tin-silver solder pads 2 9, and electrode plates 8 are connected to the ceramic copper-clad laminate 3 via tin-silver solder pads 3 10. At least one lead ceramic ring is connected to electrode plates 2 11 via tin-silver solder pads 4 12, and electrode plates 2 11 are connected to the ceramic copper-clad laminate 3 via tin-silver solder pads 5 13. The housing 1, the ceramic copper-clad laminate 3, and the field-effect transistor chip 5 are bonded together by multiple aluminum wires 7. The internal cavity of the housing 1 is filled with silicone rubber 14.
[0022] The silicone rubber 14 covers the ceramic copper-clad plate 3, the field-effect transistor chip 5, the resistor 6, the aluminum wire 7, the electrode sheet 8, and the electrode sheet 11. The electrode sheet 8 and the electrode sheet 11 are both made of oxygen-free copper strip, and the silicone rubber 14 is made of white silicone rubber.
[0023] The chassis material of the outer shell 1 is WCu12 alloy, the wall material is 4J50 alloy, the lead ceramic ring material is Kovar copper-clad, and the surface of the outer shell 1 is plated with a nickel layer with a thickness of 2μm~10μm.
[0024] The chassis of the outer shell 1 is provided with a substrate and a heat sink in sequence. The heat sink is welded to the ceramic copper-clad plate 3 by tin-silver solder sheet 2.
[0025] The heat sink material is BeO, and the substrate material is CMC.
[0026] The tin-silver solder sheet 1-2, tin-silver solder sheet 2-9, tin-silver solder sheet 3-10, tin-silver solder sheet 4-12, tin-silver solder sheet 5-13, tin-silver solder sheet 6-16, and tin-silver solder sheet 7-17 are all made of Sn96.5Ag3.5, and their width is 0.1mm~50mm, their length is 0.1mm~50mm, and their thickness is 0.02mm~0.5mm.
[0027] The ceramic clad copper plate 3 has a ceramic material of Si3N4, AlN or Al2O3 and a thickness of 0.1mm to 1mm; the surface copper clad material of the ceramic clad copper plate 3 is high-purity oxygen-free copper and has a thickness of 0.1mm to 1mm.
[0028] The upper surface of the ceramic copper-clad laminate 3 is also provided with a solder resist layer 4. The material of the solder resist layer 4 is resin-based solder resist ink, with a width of 0.01mm to 5mm and a thickness of 0.001mm to 0.05mm.
[0029] The field-effect transistor chip 5 is a silicon-based radiation-resistant chip with a length of 1mm to 20mm, a width of 1mm to 20mm, a thickness of 100μm to 380μm, a single-chip voltage range of 60V to 1200V, and a single-chip overcurrent capability of 1A to 200A. The resistor 6 has a package shape of 0603, 0805, or 1206, and a resistance value of 1Ω to 10Ω. The aluminum wire 7 is made of pure aluminum with a wire diameter of 100μm to 500μm. The cover plate 15 is made of 4J29 alloy, and its surface is plated with a nickel layer with a thickness of 2μm to 10μm.
[0030] The number of field-effect transistor chips 5 is three, and each field-effect transistor chip 5 is respectively equipped with a resistor 6 as a gate resistor.
[0031] In summary, the beneficial technical effects of the present invention are as follows: 1. Multi-chip parallel technology is used: Three field-effect transistor chips are connected in parallel, which not only increases the device's overcurrent capability, but also reduces the device's heat flux density and on-resistance, thereby improving the device's reliability; each chip is equipped with a gate resistor, which can effectively improve gate oscillation and ensure the device's current sharing capability. 2. The device employs a metal hermetically sealed package with a heat sink design and encapsulation: The metal hermetically sealed package can directly and effectively block cosmic rays such as alpha particles and protons from directly bombarding the chip channel, preventing direct single-particle burn-out or gate breakdown; the metal casing has corresponding electromagnetic shielding characteristics, which can resist space electromagnetic pulse interference; the device adopts a hermetically sealed package, and the internal cavity is filled with inert gas in addition to the encapsulation, which can prevent electrode oxidation and arcing under high temperature or radiation environment; it meets the withstand voltage and operating voltage requirements, and the internal cavity of the device needs to be coated with silicone rubber as an insulating layer, which can make the insulation withstand voltage reach more than 3000V; 3. The base is made of tungsten copper plate and BeO is used as the heat sink for the device, which provides the best solution for heat dissipation and gives the device good heat dissipation characteristics. This is a prerequisite for the device to work stably in a high-power radiation environment.
[0032] 4. Wide range of applications: such as aerospace (satellite power systems, space station power management units, motor drives for deep space probes), nuclear industry (power supplies for monitoring instruments in nuclear power plants, nuclear fuel processing equipment, and nuclear power plant power management systems), as well as particle accelerators, medical equipment, radar transmission modules, etc. Nuclear industry: power supplies for monitoring instruments in nuclear power plants, nuclear fuel processing equipment, and nuclear power plant power management systems. Those skilled in the art will understand that the above embodiments can be modified in form and detail in practical applications without departing from the spirit and scope of the invention.
Claims
1. A radiation-resistant field-effect transistor module, characterized in that: The enclosure includes a tungsten copper chassis (1), the chassis of which is connected to a ceramic copper-clad laminate (3) via a tin-silver solder sheet one (2); at least one field-effect transistor chip (5) is connected to the end face of the ceramic copper-clad laminate (3) via a tin-silver solder sheet six (16), and at least one resistor (6) is connected via a tin-silver solder sheet seven (17); multiple lead ceramic rings are provided on the wall of the enclosure (1), and a cover plate (15) is sealed to the upper end face of the wall; at least two lead ceramic rings are connected via a tin-silver solder sheet two (9). Electrode 1 (8) is connected to the ceramic copper-clad plate (3) via tin-silver solder 3 (10), and at least one lead ceramic ring is connected to electrode 2 (11) via tin-silver solder 4 (12), and electrode 2 (11) is connected to the ceramic copper-clad plate (3) via tin-silver solder 5 (13); the outer shell (1), the ceramic copper-clad plate (3), and the field-effect transistor chip (5) are bonded together by multiple aluminum wires (7), and the internal cavity of the outer shell (1) is filled with silicone rubber (14).
2. The radiation-resistant field-effect transistor module as described in claim 1, characterized in that: The silicone rubber (14) covers the ceramic copper-clad plate (3), the field-effect transistor chip (5), the resistor (6), the aluminum wire (7), the first electrode (8), and the second electrode (11), and the materials of the first electrode (8) and the second electrode (11) are both oxygen-free copper strips, and the material of the silicone rubber (14) is white silicone rubber.
3. The radiation-resistant field-effect transistor module as described in claim 1, characterized in that: The chassis material of the outer shell (1) is WCu12 alloy, the wall material is 4J50 alloy, the lead ceramic ring material is Kovar copper-clad, and the surface of the outer shell (1) is plated with a nickel layer with a thickness of 2μm~10μm.
4. The radiation-resistant field-effect transistor module as described in claim 1, characterized in that: The chassis of the outer shell (1) is provided with a substrate and a heat sink in sequence. The heat sink is welded to the ceramic copper-clad plate (3) by a tin-silver solder sheet (2).
5. The radiation-resistant field-effect transistor module as described in claim 4, characterized in that: The heat sink material is BeO, and the substrate material is CMC.
6. The radiation-resistant field-effect transistor module as described in claim 1, characterized in that: The tin-silver solder sheet 1 (2), tin-silver solder sheet 2 (9), tin-silver solder sheet 3 (10), tin-silver solder sheet 4 (12), tin-silver solder sheet 5 (13), tin-silver solder sheet 6 (16), and tin-silver solder sheet 7 (17) are all made of Sn96.5Ag3.5, and their width is 0.1mm~50mm, their length is 0.1mm~50mm, and their thickness is 0.02mm~0.5mm.
7. The radiation-resistant field-effect transistor module as described in claim 1, characterized in that: The ceramic clad copper plate (3) is made of Si3N4, AlN or Al2O3 and has a thickness of 0.1mm to 1mm; the surface copper clad material of the ceramic clad copper plate (3) is high-purity oxygen-free copper and has a thickness of 0.1mm to 1mm.
8. The radiation-resistant field-effect transistor module as described in claim 1, characterized in that: The upper surface of the ceramic copper-clad laminate (3) is also provided with a solder resist layer (4). The material of the solder resist layer (4) is resin-based solder resist ink, with a width of 0.01mm to 5mm and a thickness of 0.001mm to 0.05mm.
9. The radiation-resistant field-effect transistor module as described in claim 1, characterized in that: The field-effect transistor chip (5) is a silicon-based radiation-resistant chip with a length of 1mm to 20mm, a width of 1mm to 20mm, a thickness of 100μm to 380μm, a single-chip voltage range of 60V to 1200V, and a single-chip overcurrent capability of 1A to 200A. The resistor (6) has a package shape of 0603, 0805 or 1206, and a resistance value of 1Ω to 10Ω. The aluminum wire (7) is made of pure aluminum with a wire diameter of 100μm to 500μm. The cover plate (15) is made of 4J29 alloy and has a nickel layer with a thickness of 2μm to 10μm on its surface.
10. The radiation-resistant field-effect transistor module as described in claim 1, characterized in that: The number of field-effect transistor chips (5) is three, and each field-effect transistor chip (5) is respectively provided with a resistor (6) as a gate resistor.