A double-sided heat-dissipating semiconductor packaged device and its packaging method

Abstract

This application relates to the field of semiconductor packaging technology, and proposes a double-sided heat-dissipating semiconductor packaging device and its packaging method. The device includes a lead frame, a semiconductor chip, a metal sheet, and a molding compound. The lead frame is connected to a plurality of first gull-wing pins. The semiconductor chip is disposed on the lead frame. The metal sheet includes a metal sheet body and a plurality of second gull-wing pins extending outward from the metal sheet body, and the metal sheet body is disposed on the semiconductor chip. The molding compound covers the lead frame, the semiconductor chip, and the metal sheet body, and the first and second gull-wing pins extend from the molding compound, and the first and second gull-wing pins are constructed as a cantilever structure with elastic deformation capability. This application has the effect of relieving the thermal stress generated by the chip.

Description

Technical Field

[0001] This application relates to the field of semiconductor packaging technology, and proposes a double-sided heat dissipation semiconductor packaging device and its packaging method. Background Technology

[0002] Semiconductor packaging technology is a crucial step in the semiconductor manufacturing process, playing a vital role in protecting chips, achieving electrical connections, and improving chip performance and reliability. With the continuous development of the semiconductor industry, chip integration and density are increasing, placing higher demands on semiconductor packaging structures and methods. Advanced packaging technologies can effectively improve chip heat dissipation efficiency and reduce resistance, thereby enhancing the overall performance and stability of the chip and driving the development of electronic devices towards smaller, lighter, and faster devices.

[0003] Existing double-sided heat dissipation packages, after molding, form a highly constrained, monolithic rigid structure. When high-power semiconductor chips generate a large amount of heat and undergo thermal expansion during operation, significant differences in the coefficients of thermal expansion between the chip, upper and lower frames, and molding compound create enormous thermal stress within the package. Due to the rigid connection between the existing upper and lower frames and the lack of a buffering mechanism, thermal stress easily concentrates on the most vulnerable areas—the chip itself or the solder joints—ultimately leading to stress deformation of the chip, cracking of the package, or fatigue fracture of internal solder joints, severely impacting device reliability and lifespan.

[0004] The aforementioned technologies have the drawback of rigid packaging structures that prevent the release of thermal stress, which can easily lead to chip deformation and solder joint breakage. Summary of the Invention

[0005] In order to release the thermal stress generated by the chip and avoid chip deformation and solder joint breakage, this application provides a double-sided heat dissipation semiconductor packaging device and its packaging method.

[0006] On the one hand, the double-sided heat dissipation semiconductor packaging device provided in this application adopts the following technical solution: A double-sided heat-dissipating semiconductor package device, comprising: The lead frame is connected to multiple first gull-wing pins; A semiconductor chip is disposed on the lead frame; A metal sheet includes a metal sheet body and a plurality of second gull-wing pins extending outward from the metal sheet body, the metal sheet body being disposed on the semiconductor chip; A molding compound covers the lead frame, the semiconductor chip, and the metal sheet body, with the first gull-wing pin and the second gull-wing pin extending from the molding compound, wherein the first gull-wing pin and the second gull-wing pin are configured as a cantilever structure with elastic deformation capability.

[0007] By adopting the above technical solution, semiconductor chips generate a large amount of heat during operation, leading to thermal expansion. Traditional integrated packaging is prone to semiconductor chip deformation and lead solder joint breakage due to excessive stress. This application allows the metal sheet and lead frame to generate independent adaptive displacements through physical separation. Furthermore, the cantilever structure and elastic deformation of the first and second gull-wing leads actively absorb thermal expansion stress, preventing stress concentration on the semiconductor chip or solder joints, and significantly reducing the risk of package cracking and electrical failure.

[0008] Optionally, the source of the semiconductor chip is in contact with the lead frame, and the drain of the semiconductor chip is in contact with the metal sheet body.

[0009] By adopting the above technical solution, the semiconductor chip is mounted with the source side down, which reduces the parasitic inductance of the packaged device and reduces electromagnetic interference.

[0010] Optionally, the encapsulation body is provided with a first heat dissipation opening for exposing the lead frame and a second heat dissipation opening for exposing the metal sheet body, so as to form a first heat dissipation surface located in the first heat dissipation opening and a second heat dissipation surface located in the second heat dissipation opening.

[0011] By adopting the above technical solution, and by setting a first heat dissipation opening and a second heat dissipation opening on the molding compound, the metal sheet and lead frame are directly exposed to the outside air (or in contact with an external heat sink). This eliminates the obstruction of the heat dissipation path by the molding compound, forming a direct metal heat conduction path, making the packaged device more suitable for high-power applications.

[0012] Optionally, the lead frame has a base island region and a pin pre-connection region, the semiconductor chip is located in the base island region, and the first gull-wing pin is connected to the pin pre-connection region.

[0013] By adopting the above technical solution, the base island area is used to carry the semiconductor chip and the pin pre-connection area is used to connect with the first gull-wing pin, which makes the packaging process more modular and facilitates the precise positioning and soldering of the first gull-wing pin during the assembly process.

[0014] Optionally, the contact area between the metal sheet body and the semiconductor chip is provided with a through groove; the base island area and the pin pre-connection area are provided with slots.

[0015] By adopting the above technical solutions, the through-slots and slots allow the molding compound to flow through, increasing the contact area and interlocking force between the molding compound and the metal sheet and lead frame. The design of the through-slots and slots can further reduce the stiffness of the metal sheet and lead frame, synergistically enhance the elastic deformation capacity, and further release internal stress.

[0016] Optionally, the side edges of the base island region have a non-smooth, rough structure to mechanically interlock the side edges of the base island region with the encapsulated body.

[0017] By employing the above technical solution, the adhesion between the base island region and the molding compound is greatly enhanced through the mechanical interlocking effect. The roughened interface extends the path for external moisture to enter the core region of the semiconductor chip, improving the moisture resistance and reliability of the packaged device.

[0018] On the other hand, this application also provides a packaging method for a double-sided heat dissipation semiconductor packaging device, which adopts the following technical solution: A packaging method for a double-sided heat-dissipating semiconductor packaged device, comprising: S2. Apply solder paste to the base island area and pin pre-connection area of ​​the lead frame; S3. Place a semiconductor chip in the base island area and place a plurality of first gull-wing pins in the pin pre-connection area; S4. Apply the solder paste to the upper surface of the semiconductor chip; S5. Place a metal sheet on the semiconductor chip; wherein the metal sheet includes a metal sheet body covering the semiconductor chip and a plurality of second gull-wing pins extending outward from the metal sheet body.

[0019] By adopting the above technical solution and using a solder paste printing and stacking process similar to surface mount technology, a one-time pre-connection of the metal sheet, lead frame, and semiconductor chip is achieved, avoiding the complex multiple die bonding and wire bonding steps in traditional packaging. The tension of the solder paste during reflow soldering helps the semiconductor chip, lead frame, and metal sheet to self-correct minute positions.

[0020] Optionally, the method may also include the following steps before step S2: S1. The wafer is cut into multiple semiconductor chips.

[0021] By adopting the above technical solution, wafer dicing is incorporated into the packaging process, ensuring the accuracy of matching between semiconductor chip size and base island area, thus guaranteeing packaging quality from the source.

[0022] Optionally, the process may include the following after step S5: S6. Bake and solder the lead frame, the semiconductor chip, and the metal sheet; S7. Wrap the lead frame, the semiconductor chip, and the metal sheet with a molding compound to form a packaged device; S8. Tin-plat the first gull-wing pin and the second gull-wing pin; S9. Perform lead separation processing on multiple packaged devices; S10. Perform electrical and heat dissipation tests on the packaged device; S11. Perform moisture-proof and anti-static treatment on the packaged device.

[0023] By employing the above technical solution, tin plating of the first and second gull-wing leads enhances their solderability and oxidation resistance. Lead cutting and electrical and thermal testing ensure the functional integrity of the packaged device. Moisture-proof and anti-static treatment guarantees the long-term stability of the packaged device during transportation and storage.

[0024] Optionally, in step S7, both the first gull-wing pin and the second gull-wing pin extend out of the molding compound; the molding compound is provided with a first heat dissipation opening for exposing the lead frame and a second heat dissipation opening for exposing the metal sheet, so as to form a first heat dissipation surface located in the first heat dissipation opening and a second heat dissipation surface located in the second heat dissipation opening.

[0025] By adopting the above technical solution, it is ensured that the final packaged device can perfectly present a physical heat dissipation structure with double-sided heat dissipation, thus guaranteeing the consistency of heat dissipation performance.

[0026] In summary, this application includes at least one of the following beneficial technical effects: 1. Semiconductor chips generate a large amount of heat during operation, leading to thermal expansion. Traditional integrated packages are prone to deformation of the semiconductor chip and breakage of lead solder joints due to excessive stress. This application allows the metal sheet and lead frame to generate independent adaptive displacements through physical separation. In addition, the cantilever structure and elastic deformation of the first and second gull-wing leads actively absorb thermal expansion stress, preventing stress concentration on the semiconductor chip or solder joints, and significantly reducing the risk of package cracking and electrical failure. 2. By providing a first and second heat dissipation opening on the molding compound, the metal sheet and lead frame are directly exposed to the outside air (or in contact with an external heat sink). This eliminates the obstruction of the heat dissipation path by the molding compound, forming a direct metal heat conduction path, making the packaged device more suitable for high-power applications. 3. Through-slots and grooves allow molding compound to flow through, increasing the contact area and interlocking force between the molding compound and the metal sheet and lead frame. The through-slot and groove design further reduces the stiffness of the metal sheet and lead frame, synergistically enhancing elastic deformation capacity and further releasing internal stress. 4. Employing a surface mount-like solder paste printing and stacking process, the metal sheet, lead frame, and semiconductor chip are pre-connected in a single stack, avoiding the complex multiple die bonding and wire bonding steps of traditional packaging. The tension of the solder paste during reflow soldering helps the semiconductor chip, lead frame, and metal sheet achieve self-correction of minute positions. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of a double-sided heat dissipation semiconductor packaging device according to an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a double-sided heat dissipation semiconductor packaging device according to an embodiment of this application from another angle; Figure 3 This is a cross-sectional view of a double-sided heat dissipation semiconductor packaging device according to an embodiment of this application; Figure 4 This is a schematic flowchart of a packaging method for a double-sided heat dissipation semiconductor packaging device according to an embodiment of this application.

[0028] Explanation of reference numerals in the attached figures: 10, lead frame; 11, base island area; 12, pin pre-connection area; 13, first gull-wing pin; 14, first heat dissipation surface; 20, semiconductor chip; 30, metal sheet; 31, metal sheet body; 32, second gull-wing pin; 33, second heat dissipation surface; 40, molding compound; 41, first heat dissipation opening; 42, second heat dissipation opening; 50, solder paste. Detailed Implementation

[0029] The following combination Figures 1-4 This application will be described in further detail.

[0030] This application discloses a double-sided heat dissipation semiconductor packaging device.

[0031] Figure 1 This is a schematic diagram of the structure of a double-sided heat dissipation semiconductor packaging device according to an embodiment of this application. Figure 2 This is a schematic diagram of the structure of a double-sided heat dissipation semiconductor packaging device according to an embodiment of this application from another angle. Figure 3 This is a cross-sectional view of a double-sided heat-dissipating semiconductor packaged device according to an embodiment of this application. (Refer to...) Figure 1 , Figure 2 and Figure 3 The double-sided heat-dissipating semiconductor package includes a lead frame 10, a semiconductor chip 20, a metal sheet 30, and a molding compound 40. The semiconductor chip 20 is disposed on the lead frame 10, the metal sheet 30 is disposed on the semiconductor chip 20, and the molding compound 40 encapsulates the lead frame 10, the semiconductor chip 20, and the metal sheet 30 to form a packaged device.

[0032] The molding compound 40 has a first heat dissipation opening 41 for exposing the lead frame 10 and a second heat dissipation opening 42 for exposing the metal sheet 30, forming a first heat dissipation surface 14 within the first heat dissipation opening 41 and a second heat dissipation surface 33 within the second heat dissipation opening 42. This double-sided heat dissipation method greatly improves heat dissipation efficiency compared to the traditional single-sided heat dissipation method, allowing the thermal resistance of the packaged device to be reduced to below 0.3℃ / W, resulting in a lower junction temperature and higher power density for the semiconductor chip 20.

[0033] The lead frame 10 has a base island region 11 and a pin pre-connection region 12, and the semiconductor chip 20 is located on the base island region 11. The pin pre-connection region 12 is connected to a plurality of first gull-wing pins 13. The metal sheet 30 includes a metal sheet body 31 and a plurality of second gull-wing pins 32 extending outward from the metal sheet body 31. The first gull-wing pins 13 and the second gull-wing pins 32 extend out of the molding compound 40. Both the first gull-wing pins 13 and the second gull-wing pins 32 are constructed as cantilever structures with elastic deformation capabilities. When the semiconductor chip 20 undergoes thermal expansion, both the lead frame 10 and the metal sheet 30 can independently generate adaptive displacement to release thermal stress, avoiding problems such as loosening that easily occur in traditional rigid connection structures when the semiconductor chip 20 undergoes thermal expansion, thus improving the electrical performance and stability of the packaged device.

[0034] Both the lead frame 10 and the metal sheet 30 can be made of metals with good electrical and thermal conductivity, such as copper or aluminum. The side edges of the base island region 11 have a non-smooth, rough structure. For example, tiny protrusions or depressions can be formed by etching or machining, so that the side edges of the base island region 11 and the molding compound 40 form a mechanical interlock. This mechanical interlock structure enhances the connection strength between the lead frame 10 and the molding compound 40, ensuring the stability of the packaged device.

[0035] Solder paste 50 is provided between the first gull-wing pin 13 and the lead frame 10, between the lead frame 10 and the semiconductor chip 20, and between the semiconductor chip 20 and the metal sheet body 31.

[0036] The source of the semiconductor chip 20 is in contact with the lead frame 10, and the drain of the semiconductor chip 20 is in contact with the metal sheet body 31. The semiconductor chip 20 is the core component of the entire packaged device. Its structure is composed of various semiconductor materials and circuit elements, and its shape is generally a rectangular thin sheet with various electrodes and circuit wiring on its surface. During installation, the source of the semiconductor chip 20 is in close contact with the base island region 11 of the lead frame 10 through conductive media such as solder paste to achieve good electrical connection and heat dissipation. The drain of the semiconductor chip 20 is also connected to the corresponding part of the metal sheet body 31 through solder paste to ensure signal transmission and control. The semiconductor chip 20 adopts a source-down mounting method, with the source directly connected to the bottom lead frame 10, which can further reduce the parasitic inductance of the package and reduce electromagnetic interference. The drain of the semiconductor chip 20 is connected to the top metal sheet body 31, reducing the resistance introduced by the package to below 0.1mΩ, while the resistance of traditional packages connected by wire bonding is usually above 0.3mΩ.

[0037] The metal sheet body 31 has a through-groove in the contact area with the semiconductor chip 20, and the base island region 11 and the pin pre-connection region 12 have slots. The through-groove reduces the contact area between the metal sheet body 31 and the semiconductor chip 20, which is beneficial for heat dissipation and also reduces the weight of the packaged device to some extent. The slot design increases the heat dissipation path and improves heat dissipation efficiency.

[0038] The implementation principle of a double-sided heat-dissipating semiconductor packaging device according to an embodiment of this application is as follows: The semiconductor chip 20 generates a large amount of heat during operation, leading to thermal expansion. Traditional integrated packaging is prone to deformation of the semiconductor chip 20 and breakage of lead solder joints due to excessive stress. This application, through physical separation, allows the metal sheet body 31 and the lead frame 10 to each generate independent adaptive displacement. Furthermore, the cantilever structure and elastic deformation of the first gull-wing lead 13 and the second gull-wing lead 32 actively absorb thermal expansion stress, preventing stress concentration on the semiconductor chip or solder joints, significantly reducing the risk of package cracking and electrical failure.

[0039] This application also discloses a packaging method for a double-sided heat dissipation semiconductor packaging device.

[0040] Figure 4 This is a schematic flowchart illustrating a packaging method for a double-sided heat-dissipating semiconductor packaging device according to an embodiment of this application. (Refer to...) Figure 4 The packaging method for the double-sided heat dissipation semiconductor packaged device includes: S1. The wafer is cut into multiple semiconductor chips 20.

[0041] S2. Apply solder paste 50 to the base island region 11 and the pin pre-connection region 12 of the lead frame 10. S3. Place a semiconductor chip 20 in the base island region 11 and place a plurality of first gull-wing pins 13 in the pin pre-connection region 12. S4. Apply the solder paste 50 to the upper surface of the semiconductor chip 20. S5. Place a metal sheet 30 on the semiconductor chip 20. The metal sheet 30 includes a metal sheet body 31 covering the semiconductor chip 20 and a plurality of second gull-wing pins 32 extending outward from the metal sheet body 31.

[0042] S6. Bake and solder the lead frame 10, the semiconductor chip 20, and the metal sheet 30. S7. Wrap the lead frame 10, the semiconductor chip 20, and the metal sheet 30 with a molding compound 40 to form a packaged device. S8. Tin-plat the first gull-wing pin 13 and the second gull-wing pin 32. S9. Perform lead separation processing on multiple packaged devices. S10. Perform electrical and thermal testing on the packaged devices. S11. Perform moisture-proof and anti-static treatment on the packaged devices.

[0043] The steps described above will be explained in detail below.

[0044] In step S1, the wafer is diced into multiple semiconductor chips 20. First, the wafer, manufactured using the previous process, is mounted on a dicing film and fixed in a wafer ring. Using a precision dicing machine, employing diamond wheel dicing or laser stealth dicing technology, longitudinal and transverse mechanical cuts are made along the dicing grooves on the wafer, separating the entire wafer into individual semiconductor chips 20. After dicing, the semiconductor chips 20 are cleaned and dried to remove impurities such as silicon powder generated during the dicing process.

[0045] In step S2, solder paste 50 is applied to the base island region 11 and the pin pre-connection region 12 of the lead frame 10. The lead frame 10 is then transported to the worktable of a solder paste printer or dispensing machine. The lead frame 10 is typically made of copper alloy, and its surface may be pre-plated with silver or nickel-palladium-gold. Using high-precision stencil printing or syringe dispensing processes, an appropriate amount of solder paste 50 is applied to the center of the base island region 11 of the lead frame 10. Simultaneously, solder paste 50 is also applied to the pin pre-connection region 12 for connecting the first gull-wing pins 13. The solder paste 50 is typically a high-melting-point or medium-melting-point lead-free solder to meet the requirements of the subsequent reflow soldering process. In step S3, a semiconductor chip 20 is placed in the base island region 11, and multiple first gull-wing pins 13 are placed in the pin pre-connection region 12. The pre-cut semiconductor chip 20 can be picked up from the blue film using the nozzle of the die bonder. Then, a vision alignment system identifies the reference points on the lead frame 10, precisely mounting the semiconductor chip 20 onto the base island region 11 coated with solder paste 50, applying downward pressure to ensure good contact. Simultaneously, a robotic arm places the first gull-wing pin 13 onto the solder paste 50 in the pin pre-connection region 12. In step S4, the solder paste 50 is applied to the upper surface of the semiconductor chip 20. After the semiconductor chip 20 is mounted, a dispensing machine performs secondary dispensing on the electrode region of the upper surface of the semiconductor chip 20. The dispensing head precisely controls the amount and application trajectory of the solder paste 50 according to the shape and size of the electrodes on the semiconductor chip 20, forming a uniform solder paste layer to prepare for subsequent connection with the metal sheet 30. In step S5, a metal sheet 30 is placed on the semiconductor chip 20. The metal sheet 30 includes a metal sheet body 31 covering the semiconductor chip 20 and a plurality of second gull-wing pins 32 extending outward from the metal sheet body 31. Using a vision system to align the electrode positions on the semiconductor chip 20, the metal sheets 30 are stacked on the solder paste 50 on the upper surface of the semiconductor chip 20. At this time, the second gull-wing pins 32 extending from the metal sheet 30 are suspended or supported on specific auxiliary supports, and have not yet formed their final bent shape.

[0046] In step S6, the lead frame 10, the semiconductor chip 20, and the metal sheet 30 are baked and soldered. The stacked semi-finished products can be conveyed into a reflow oven via a conveyor belt. The soldering process follows a preset temperature profile, typically including a preheating zone, a constant temperature zone, a reflow zone, and a cooling zone. In the reflow zone, the temperature rises above the melting point of the solder paste 50, causing it to melt and wet the metal surface. During this process, utilizing the surface tension effect of the molten solder, a slight self-alignment occurs between the semiconductor chip 20, the metal sheet 30, and the lead frame 10, correcting minor deviations caused during mounting. After cooling, the solder paste 50 solidifies to form a stable electrical and mechanical connection. After soldering, a cleaning step is performed to remove residual flux. In step S7, the lead frame 10, the semiconductor chip 20, and the metal sheet 30 are encapsulated in a molding compound 40 to form a packaged device. The welded lead frame 10, semiconductor chip 20, and metal sheet 30 can be placed into a mold on a transfer molding machine. During injection molding, epoxy resin molding compound is injected into the mold cavity under high temperature and pressure, filling the gaps around the frame and chip. During injection molding, the mold closing pressure is controlled so that the top and bottom surfaces of the mold press tightly against the upper surface of the metal sheet 30 and the lower surface of the lead frame 10, respectively, thereby preventing the molding compound from covering these areas. After the molding compound cures, a first heat dissipation opening 41 for exposing the lead frame 10 and a second heat dissipation opening 42 for exposing the metal sheet body 31 are naturally formed, forming a first heat dissipation surface 14 located in the first heat dissipation opening 41 and a second heat dissipation surface 33 located in the second heat dissipation opening 42, thereby achieving double-sided heat dissipation surface exposure. In step S8, the first gull-wing pin 13 and the second gull-wing pin 32 are tin-plated. After molding, the flash is first removed using a high-pressure water jet or chemical immersion process to remove any remaining material from the first heat dissipation surface 14, the second heat dissipation surface 33, the first gull-wing pin 13, and the second gull-wing pin 32. Then, an electroplating process is used to plate a layer of pure tin or tin-lead alloy onto the surfaces of the first gull-wing pin 13 and the second gull-wing pin 32 exposed outside the molded body, as well as onto the exposed first heat dissipation surface 14 and the second heat dissipation surface 33. This plating layer aims to prevent copper oxidation and improve the solderability of the device when used by the customer. In step S9, multiple packaged devices undergo lead-cutting separation. This involves feeding strip-shaped packaged products into a lead-cutting forming machine to remove the metal sheet 30 and the connecting ribs and frame of the lead frame 10 that connect each unit. In step S10, the packaged devices undergo electrical and thermal testing. The separated individual packaged devices are placed in an automated testing equipment for electrical and thermal testing.Electrical testing involves applying voltage or current by contacting the first gull-wing pin 13 and the second gull-wing pin 32 with test probes to test parameters such as on-resistance, threshold voltage, and leakage current of the packaged device, eliminating defective products with open circuits, short circuits, or substandard parameters. Thermal testing involves detecting the thermal resistance characteristics of the first heat dissipation surface 14 and the second heat dissipation surface 33 to ensure effective and unobstructed double-sided heat dissipation channels. In step S11, the packaged device undergoes moisture-proof and anti-static treatment. Good products that pass the test are loaded into the grooves of the carrier tape using a tape reeling machine and covered with a cover tape. The reel is then placed in an aluminum foil anti-static bag, along with a desiccant and a humidity indicator card, and finally sealed under vacuum. This prevents moisture-induced mechanical failure during reflow soldering due to moisture absorption during transportation and storage, and also prevents electrostatic discharge (ESD) damage to the chip.

[0047] The implementation principle of the packaging method for a double-sided heat-dissipating semiconductor packaging device according to an embodiment of this application is as follows: A solder paste printing and stacking process similar to surface mount technology is used to achieve a one-time pre-connection of the metal sheet 30, the lead frame 10, and the semiconductor chip 20, avoiding the complex multiple die bonding and wire bonding steps in traditional packaging. The tension of the solder paste 50 during the reflow soldering process helps the semiconductor chip 20, the lead frame 10, and the metal sheet 30 to self-correct minute positions.

[0048] The above are all preferred embodiments of this application, and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. A double-sided heat-dissipating semiconductor packaged device, characterized in that, include: The lead frame (10) is connected to a plurality of first gull-wing pins (13); A semiconductor chip (20) is disposed on the lead frame (10); The metal sheet (30) includes a metal sheet body (31) and a plurality of second gull-wing pins (32) extending outward from the metal sheet body (31), wherein the metal sheet body (31) is disposed on the semiconductor chip (20); A molding compound (40) covers the lead frame (10), the semiconductor chip (20) and the metal sheet body (31), and the first gull-wing pin (13) and the second gull-wing pin (32) extend from the molding compound (40), wherein the first gull-wing pin (13) and the second gull-wing pin (32) are configured as a cantilever structure with elastic deformation capability.

2. The double-sided heat-dissipating semiconductor packaged device according to claim 1, characterized in that, The source of the semiconductor chip (20) is in contact with the lead frame (10), and the drain of the semiconductor chip (20) is in contact with the metal sheet body (31).

3. The double-sided heat-dissipating semiconductor packaged device according to claim 1, characterized in that, The encapsulation body (40) is provided with a first heat dissipation opening (41) for exposing the lead frame (10) and a second heat dissipation opening (42) for exposing the metal sheet body (31) to form a first heat dissipation surface (14) located in the first heat dissipation opening (41) and a second heat dissipation surface (33) located in the second heat dissipation opening (42).

4. The double-sided heat-dissipating semiconductor packaged device according to claim 1, characterized in that, The lead frame (10) has a base island region (11) and a pin pre-connection region (12). The semiconductor chip (20) is located in the base island region (11), and the first gull-wing pin (13) is connected to the pin pre-connection region (12).

5. The double-sided heat-dissipating semiconductor packaged device according to claim 4, characterized in that, The contact area between the metal sheet body (31) and the semiconductor chip (20) is provided with a through groove; the base island area (11) and the pin pre-connection area (12) are provided with slots.

6. The double-sided heat-dissipating semiconductor packaged device according to claim 4, characterized in that, The side edges of the base island region (11) have a non-smooth, rough structure so that the side edges of the base island region (11) are mechanically interlocked with the encapsulated body (40).

7. A packaging method for a double-sided heat-dissipating semiconductor packaged device, characterized in that, include: S2. Apply solder paste (50) to the base island area (11) and pin pre-connection area (12) of the lead frame (10). S3. Place a semiconductor chip (20) in the base island region (11) and place a plurality of first gull-wing pins (13) in the pin pre-connection region (12). S4. Apply the solder paste (50) to the upper surface of the semiconductor chip (20); S5. A metal sheet (30) is placed on the semiconductor chip (20); wherein the metal sheet (30) includes a metal sheet body (31) covering the semiconductor chip (20) and a plurality of second gull-wing pins (32) extending outward from the metal sheet body (31).

8. The packaging method for the double-sided heat-dissipating semiconductor packaged device according to claim 7, characterized in that, The steps preceding step S2 also include: S1. The wafer is cut into multiple semiconductor chips (20).

9. The packaging method for the double-sided heat-dissipating semiconductor packaged device according to claim 7, characterized in that, The process after step S5 also includes: S6. The lead frame (10), the semiconductor chip (20) and the metal sheet (30) are baked and soldered. S7. The lead frame (10), the semiconductor chip (20) and the metal sheet (30) are encapsulated in a plastic encapsulator (40) to form a packaged device; S8. Tin plating is performed on the first gull-wing pin (13) and the second gull-wing pin (32); S9. Perform lead separation processing on multiple packaged devices; S10. Perform electrical and heat dissipation tests on the packaged device; S11. Perform moisture-proof and anti-static treatment on the packaged device.

10. The packaging method for the double-sided heat-dissipating semiconductor packaged device according to claim 9, characterized in that, In step S7, both the first gull-wing pin (13) and the second gull-wing pin (32) extend out of the molding compound (40); the molding compound (40) is provided with a first heat dissipation opening (41) for exposing the lead frame (10) and a second heat dissipation opening (42) for exposing the metal sheet (30) to form a first heat dissipation surface (14) located in the first heat dissipation opening (41) and a second heat dissipation surface (33) located in the second heat dissipation opening (42).

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