A glass carrier, a method of forming a glass carrier, and a method of forming a package structure
By setting a large-area groove in the middle area of the glass carrier and a glass protrusion structure in the outer area, the warping problem of the glass carrier during the encapsulation process is solved, and uniform distribution of polymer layer and stress dispersion are achieved, thereby improving encapsulation quality and efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JCET MANAGEMENT CO LTD
- Filing Date
- 2026-04-17
- Publication Date
- 2026-07-31
AI Technical Summary
Glass substrates are prone to warping during the encapsulation process, and existing technologies struggle to effectively address this issue.
Several discrete chip placement areas and idle areas are set in the middle area of the glass substrate, and grooves are cut out from the idle areas to the outer area. The area of the grooves is larger than that of the outer area. Combined with the glass protrusion structure, the distribution of polymer layers and stress dispersion are optimized.
It effectively reduces or improves the warpage of glass substrates during the encapsulation process, enhances the uniformity of polymer layer thickness, reduces production costs, and increases production yield.
Smart Images
Figure CN122497397A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor packaging, and more particularly to a glass substrate, a method for forming the glass substrate, and a method for forming a packaging structure. Background Technology
[0002] Glass substrates have advantages such as low coefficient of thermal expansion, high flatness, high heat resistance, and strong chemical stability, and are therefore increasingly widely used as temporary substrates in the PLP encapsulation process.
[0003] However, glass substrates are prone to warping during the encapsulation process. Summary of the Invention
[0004] The purpose of this application is to provide a glass substrate, a method for forming the glass substrate, and a method for forming a packaging structure, which effectively reduces the warpage of the glass substrate during and after packaging.
[0005] To achieve the above objectives, in a first aspect, embodiments of this application provide a glass carrier plate, comprising:
[0006] The bearing surface of the glass substrate includes a central region and a peripheral region surrounding the central region. The central region includes a plurality of discrete chip placement areas and an empty area located between adjacent chip placement areas. A groove located in the glass carrier plate and extending from the free area to the peripheral area, wherein the area of the groove in the free area is larger than the area of the groove in the peripheral area.
[0007] In some embodiments of this application, a plurality of the chip placement areas are arranged in an array along a first direction and a second direction, and the slots extend and intersect in the free area along the first direction and the second direction. The first direction and the second direction are both parallel to the surface of the glass substrate, and the first direction and the second direction are perpendicular to each other.
[0008] In some embodiments of this application, the cross-sectional shape of the groove along the direction perpendicular to the bearing surface of the glass carrier is rectangular or inverted trapezoidal.
[0009] In some embodiments of this application, the area of the trench in the vacant area being greater than the area of the trench in the outer perimeter area includes: the trench in the vacant area having a rectangular wave structure, the trench in the outer perimeter area having a straight line structure, and the width of the trench in the vacant area being greater than or equal to the width of the trench in the outer perimeter area.
[0010] In some embodiments of this application, the area of the trench in the vacant area being larger than the area of the trench in the outer perimeter area includes: the trench in the vacant area having a sawtooth wave structure, the trench in the outer perimeter area having a straight line structure, and the width of the trench in the vacant area being greater than or equal to the width of the trench in the outer perimeter area.
[0011] In some embodiments of this application, the area of the trench in the vacant area being larger than the area of the trench in the outer perimeter area includes: the trench in the vacant area having a straight-line structure, the trench in the outer perimeter area having a straight-line structure, and the width of the trench in the vacant area being larger than the width of the trench in the outer perimeter area.
[0012] In some embodiments of this application, it further includes: a glass protrusion located on the surface of the peripheral region, and the glass protrusion being located outside the groove, wherein the surface of the glass protrusion not in contact with the glass carrier plate is arc-shaped.
[0013] In some embodiments of this application, the number of glass protrusions is one, and the glass protrusion is annular, with the center of the annular glass protrusion being the center of the glass carrier plate.
[0014] In some embodiments of this application, the number of glass protrusions is multiple, and the multiple glass protrusions are centered on the center of the glass carrier in the peripheral region.
[0015] Secondly, embodiments of this application also provide a method for forming a glass carrier plate, comprising: A glass carrier is provided, the bearing surface of which includes a central region and a peripheral region surrounding the central region, the central region including a plurality of discrete chip placement areas and an empty region located between adjacent chip placement areas; A groove is formed in the glass substrate, extending from the free area to the peripheral area, and the area of the groove formed in the free area is larger than the area of the groove formed in the peripheral area.
[0016] In some embodiments of this application, the process for forming the trench includes photosensitive glass method, focused power generation method, plasma etching method, laser ablation method, electrochemical discharge machining method, or laser-induced etching method.
[0017] In some embodiments of this application, it also includes: A glass protrusion is formed on the outer surface of the glass carrier plate, and the glass protrusion is located outside the groove. The surface of the glass protrusion that does not contact the glass carrier plate is arc-shaped.
[0018] In some embodiments of this application, the number of glass protrusions is one or more.
[0019] In some embodiments of this application, the process of forming the glass protrusion includes: thinning the glass substrate by mechanical grinding to form a glass protrusion on the surface of the peripheral region of the glass substrate.
[0020] In some embodiments of this application, the cross-sectional shape of the groove along the direction perpendicular to the bearing surface of the glass substrate is rectangular or inverted trapezoidal.
[0021] In some embodiments of this application, the area of the trench formed in the vacant area being greater than the area of the trench formed in the outer area includes: the trench formed in the middle area having a rectangular wave structure, the trench formed in the outer area having a straight line structure, and the width of the trench formed in the middle area being greater than or equal to the width of the trench formed in the outer area.
[0022] In some embodiments of this application, the area of the trench formed in the vacant area being greater than the area of the trench formed in the outer area includes: the trench formed in the middle area having a sawtooth wave structure, the trench formed in the outer area having a straight line structure, and the width of the trench formed in the middle area being greater than or equal to the width of the trench formed in the outer area.
[0023] In some embodiments of this application, the area of the trench formed in the vacant area being greater than the area of the trench formed in the outer area includes: the trench formed in the middle area having a straight-line structure, the trench formed in the outer area having a straight-line structure, and the width of the trench formed in the middle area being greater than the width of the trench formed in the outer area.
[0024] Thirdly, embodiments of this application also provide a method for forming an encapsulation structure, including: Provide a glass substrate as described in any of the above; An organic intermediary layer is formed on the bearing surface of the glass carrier plate. The organic intermediary layer includes a polymer layer located on the bearing surface and metal wiring located within the polymer layer. The polymer layer is formed by a spin coating process and fills the grooves in the glass carrier plate. A semiconductor chip is provided and mounted on the surface of the organic interposer layer directly above the chip placement area. The semiconductor chip is electrically connected to the metal wiring.
[0025] In some embodiments of this application, it also includes: A molding compound layer is formed on the organic interposer layer to encapsulate the semiconductor chip; After the molding compound is formed, the carrier plate is removed to expose the surface of the polymer layer away from the semiconductor chip; A solder bump is formed on the surface of the polymer layer away from the semiconductor chip, and the solder bump is electrically connected to the metal wiring. The molding layer and organic interposer are divided along the free area to form several discrete encapsulation structures.
[0026] In some embodiments of this application, the polymer material includes a photosensitive polymer.
[0027] In some embodiments of this application, it also includes: A glass protrusion is formed on the outer surface of the outer region of the glass carrier plate, and the glass protrusion is located outside the groove; The thickness of the glass protrusion is less than the thickness of the polymer layer.
[0028] The beneficial effects of this application are: This application discloses a glass carrier plate, a method for forming the glass carrier plate, and a method for forming an encapsulation structure, wherein the glass carrier plate comprises: The bearing surface of the glass substrate includes a central region and a peripheral region surrounding the central region. The central region includes a plurality of discrete chip placement areas and a free area located between adjacent chip placement areas. A groove is located in the glass substrate and extends from the free area to the peripheral region, and the area of the groove in the free area is larger than the area of the groove in the peripheral region.
[0029] The glass carrier described in this application reduces or improves warpage during the encapsulation process by setting grooves with specific structures in specific areas of the glass carrier. Specifically, the area directly above the chip placement area of the glass carrier corresponds to the semiconductor chip mounting area, and the grooves are located in the glass carrier and extend from the free area to the peripheral area. The area of the groove in the free area is larger than the area of the groove in the peripheral area. On the one hand, when the aforementioned glass carrier is used for subsequent encapsulation and a polymer layer is formed on the bearing surface of the glass carrier, the polymer layer simultaneously fills the grooves. Since the area of the groove in the free area (located in the middle area of the glass carrier) is larger than the area of the groove in the peripheral area, the volume of the polymer layer accommodated in the middle area of the glass carrier increases (equivalent to reducing the volume ratio of the semiconductor chip in the middle area), thereby reducing the difference in volume between the polymer layer in the middle area and the polymer layer in the peripheral area. Consequently, when the polymer layer is formed and cooled, the shrinkage of the polymer layer in the middle area and the shrinkage of the polymer layer in the peripheral area are reduced. The difference in quantity effectively reduces or improves the warping of the glass substrate. On the other hand, the groove can also disperse the stress on the glass substrate. Since the groove extends from the free area to the peripheral area, the distribution of the groove can be continuous and multi-directional. Therefore, the stress dispersion effect of the groove is continuous from the middle area to the peripheral area and can be multi-directional, thereby further improving the stress dispersion effect and further reducing the warping of the glass substrate. Furthermore, since the area of the groove in the free area (located in the middle area of the glass substrate) is larger than the area of the groove in the peripheral area, when the polymer layer is formed by spin coating, the groove in the middle area can accommodate more polymer material during the spin coating process. This effectively reduces the thickness of the polymer layer in the middle area and improves the uniformity of the thickness of the formed polymer layer (existing polymer layers tend to form a W shape, that is, the thickness in the middle and the edges is high and the thickness in other areas is low, resulting in poor thickness uniformity. This application can effectively reduce the thickness of the polymer layer in the middle area, thereby improving the uniformity of the thickness of the formed polymer layer). Attached Figure Description
[0030] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort. In addition, in the following drawings, the components are not necessarily drawn to scale, and components with similar related characteristics or features may have the same or similar reference numerals.
[0031] Figure 1 This is a schematic diagram showing the area ratio of the chip on the glass substrate in existing technologies. Figure 2 This is a schematic diagram of a polymer material coated on a glass substrate in the prior art. Figure 3 This is a schematic diagram of the structure of a polymer material covering a glass substrate provided in some embodiments of this application; Figure 4 This is a schematic diagram of the structure of the glass carrier plate provided in some embodiments of this application; Figure 5 This is a schematic diagram of the structure of the semiconductor chip and the glass substrate provided in some embodiments of this application; Figure 6 This is a schematic diagram of the structure of the semiconductor chip and the glass substrate provided in some embodiments of this application; Figure 7 This is a schematic diagram of the structure of the semiconductor chip and the glass substrate provided in some embodiments of this application; Figure 8 for Figure 5 A schematic diagram of the cross-sectional structure obtained along the AA1 section line; Figure 9 This is a schematic diagram of the structure of the glass carrier plate provided in some embodiments of this application; Figure 10 This is a schematic flowchart of a method for forming a glass carrier plate provided in some embodiments of this application; Figure 11 This is a schematic diagram of the structure of a glass carrier plate provided in a method for forming a glass carrier plate according to some embodiments of this application; Figure 12 This is a schematic diagram of the structure of forming a groove on a glass carrier plate in some embodiments of this application. Figure 13 This is a schematic flowchart of a method for forming a glass carrier plate provided in some embodiments of this application; Figure 14 This is a schematic diagram of the structure after providing a glass carrier plate in the method for forming a glass carrier plate provided in some embodiments of this application; Figure 15 This is a schematic diagram of the structure after the organic intermediary layer is formed in the method for forming a glass carrier plate provided in some embodiments of this application; Figure 16 This is a schematic diagram of the structure after the semiconductor chip is mounted in the method for forming a glass substrate provided in some embodiments of this application; Figure 17 This is a schematic diagram of the structure after the molding layer is formed in the glass carrier plate forming method provided in some embodiments of this application; Figure 18 This is a schematic diagram of the structure after removing the glass carrier plate in the glass carrier plate forming method provided in some embodiments of this application; Figure 19 This is a schematic diagram of the structure after forming welding protrusions in the glass carrier plate forming method provided in some embodiments of this application; Figure 20 This is a schematic diagram of the structure after forming a discrete encapsulation structure in the glass carrier plate forming method provided in some embodiments of this application.
[0032] Explanation of reference numerals in the attached figures: 1: Glass substrate; 11: Bearing surface; 2: Middle area; 21: Chip placement area; 22: Unused area; 3: Peripheral area; 4: Groove; 41: Sawtooth wave structure; 42: Linear structure; 43: Rectangular wave structure; 5: Glass protrusion; 7: Discrete packaging structure; 81: Polymer layer; 82: Metal wiring; 83: Molding layer; 84: Solder protrusion; 8: Organic interposer; 9: Semiconductor chip. Detailed Implementation
[0033] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.
[0034] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this application's specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
[0035] In the description of this application, it should be noted that the use of terms such as "first" and "second" to define objects (such as elements, components, regions, layers, doping types and / or parts) is merely for the purpose of distinguishing different objects, and is not necessarily used to describe a specific order or sequence, unless the context clearly indicates otherwise.
[0036] In the description of this application, it should be understood that the singular forms “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that when the terms “compose” and / or “comprise” are used in this specification, the presence of the stated feature, integer, step, operation, element, and / or part is established, but the presence or addition of one or more other features, integers, steps, operations, elements, parts, and / or groups is not excluded. Meanwhile, when used herein, the term “and / or” includes any and all combinations of the associated listed items.
[0037] In the description of this application, it should also be noted that when a component is referred to as "on another component," "connected to another component," or "in contact with another component," it can mean not only that a component is directly on, directly connected to, or directly in contact with the other component, but also that an intermediate component can be inserted between the two components. Furthermore, "connection" includes not only fixed connections but also detachable connections or integral connections. Similarly, when an element is referred to as "electrically connected," "electrically contacted," "electrically coupled," or "electrically coupled to" another element, the two elements can be in direct electrical contact or electrical coupling, or they can be in electrical contact or electrical coupling through an intermediate component.
[0038] In the description of this application, it should also be noted that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is usually based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this application and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this application; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.
[0039] Furthermore, in the description of this application, spatial relation terms such as "below," "under," "below," "below," "below," "above," "on the upper surface of," "above," etc., can be used to describe the spatial positional relationship between one element or feature shown in the figures and other elements or features. It should be understood that spatial relation terms, in addition to the orientation shown in the figures, also include different orientations of elements or features in use and operation. For example, if an element or feature in the figures is flipped or inverted, an element or feature described as "below" or "below" other elements or features will be oriented "above" other elements or features. Furthermore, elements may also include other orientations (e.g., rotated by an angle or other orientations).
[0040] The structure of the embodiments of this application should not be limited to the specific shape shown in the accompanying drawings, but includes shape deviations due to, for example, manufacturing techniques.
[0041] It is understood that in some of the accompanying drawings of this application, adjacent films with the same processing material are drawn as connected to make them resemble the actual structure.
[0042] In the existing technology, when using a glass substrate 1 for encapsulation, such as Figure 1 As shown, several semiconductor chips 9 are arranged in the corresponding area directly above the surface of the middle region 2 of the glass substrate 1, while the outer region 3 of the glass substrate 1 is not arranged with semiconductor chips 9 due to insufficient space. As the size of the semiconductor chip 9 continues to increase (for example, the size of the semiconductor chip 9 used in the field of artificial intelligence is larger, such as greater than 20 mm x 20 mm), the number of semiconductor chips 9 that can be placed in the corresponding area directly above the glass substrate 1 of the same size will decrease, and the area of the peripheral area where semiconductor chips 9 cannot be placed will increase accordingly. That is, the area or area ratio occupied by the semiconductor chip 9 in the corresponding area directly above the glass substrate 1 will decrease. When a molding polymer layer (or molding layer) is formed on the glass substrate 1, the volume of the molding polymer layer (or molding layer) in the peripheral area 3 will be larger than the volume of the molding polymer layer (or molding layer) in the middle area 2. And since the coefficient of thermal expansion (CTE) of the molding polymer layer (or molding layer) is much larger than that of glass and silicon, the shrinkage of the molding polymer layer (or molding layer) in the peripheral area will be greater when cooling after the molding polymer layer (or molding layer) is formed, which makes the glass substrate 1 more prone to warping during the encapsulation process. Figure 2 As shown, in the prior art, when polymer material is spin-coated onto a glass substrate 1, the polymer material flows in from the center of the glass substrate 1 and is distributed across the entire surface of the glass substrate 1 by centrifugal force. After spin-coating, the resulting polymer layer 81 has uneven thickness or poor thickness uniformity. Specifically, it has a W-shape from the middle region to the outer region, meaning that the polymer layer 81 is thicker in the middle and edges of the glass substrate 1, and thinner in other regions than in the encapsulation layer 83.
[0043] Therefore, the first aspect of the embodiments of this application provides a glass carrier plate, with reference to Figure 4 , Figure 5 and Figure 8 ,include: The bearing surface 11 of the glass carrier plate 1 includes a central region 2 and a peripheral region 3 surrounding the central region 2. The central region 2 includes a plurality of discrete chip placement areas 21 and a free area 22 located between adjacent chip placement areas 21. A groove 4 is located in the glass carrier plate 1 and extends from the free area 22 to the peripheral region 3, and the area of the groove 4 in the free area 22 is larger than the area of the groove 4 in the peripheral region 3.
[0044] The glass carrier 1 described in this application reduces or improves warpage during the encapsulation process by setting a groove 4 with a specific structure in a specific area of the glass carrier 1. Specifically, the area directly above the chip placement area 21 of the glass carrier 1 corresponds to the mounting area of the semiconductor chip 9, and the groove 4 is located in the glass carrier 1 and extends from the free area 22 to the peripheral area 3, and the area of the groove 4 in the free area 22 is larger than the area of the groove 4 in the peripheral area 3. On the one hand, when the aforementioned glass carrier 1 is used for subsequent encapsulation, a polymer layer 81 (see reference) is formed on the bearing surface 11 of the glass carrier 1. Figure 3 or Figure 15 When the polymer layer 81 fills the groove 4, the area of the groove 4 in the empty area 22 (located in the middle area 2 of the glass carrier plate 1) is larger than the area of the groove 4 in the outer area 3, thus increasing the volume of the polymer layer 81 contained in the middle area 2 of the glass carrier plate 1 (see reference). Figure 17This is equivalent to reducing the volume ratio of the semiconductor chip 9 in the intermediate region 2, thereby reducing the difference in volume between the polymer layer 81 in the intermediate region 2 and the polymer layer 81 in the peripheral region 3 of the glass substrate 1. Consequently, during the cooling process of forming the polymer layer 81, the difference in shrinkage between the polymer layer 81 in the intermediate region 2 and the polymer layer 81 in the peripheral region 3 is reduced, effectively reducing or improving the warpage of the packaging structure 6. On the other hand, the groove 4 can also disperse the stress on the glass substrate 1, and since the groove 5 extends from the free area 22 to the peripheral region 3, the distribution of the groove 4 can be continuous and multi-directional. Therefore, the stress dispersion effect of the groove 4 is continuous from the middle region 2 to the outer region 3, and can be multi-directional, thereby further improving the stress dispersion effect of the groove 4 and further reducing the warping of the glass carrier plate 1. On the other hand, since the area of the groove 4 in the empty region 22 (located in the middle region 2 of the glass carrier plate 1) is larger than the area of the groove 4 in the outer region 3, when the polymer layer 81 is formed by spin coating, the groove 4 in the middle region 2 can accommodate more polymer material during the spin coating process, thereby effectively reducing the thickness of the polymer layer 81 in the middle region 2 and improving the uniformity of the thickness of the formed polymer layer 81 (see reference). Figure 2 The existing polymer layer 81 tends to form a W shape, meaning that the thickness is high in the middle and at the edges, and low in other areas, resulting in poor thickness uniformity. However, this application can effectively reduce the thickness of the polymer layer 81 in the middle region 2, thereby improving the thickness uniformity of the formed polymer layer 81.
[0045] The structure of the aforementioned glass carrier plate will now be described in detail with reference to the accompanying drawings.
[0046] In some embodiments, continue to refer to Figure 4 The chip placement areas 21 are arranged in an array along a first direction and a second direction. The slot 4 extends and intersects in the free area 22 along the first direction and the second direction. The first direction and the second direction are both parallel to the surface of the glass substrate 1 and are perpendicular to each other.
[0047] Specifically, several chip placement areas 21 are arranged in an array along a first direction and a second direction. Several grooves 4 extend and intersect along the first direction and the second direction in the empty area 22 between the chip placement areas 21, and extend from the empty area 22 to the outer area 3. Thus, the distribution of several grooves 4 in the glass substrate 1 is no longer an isolated structure, but forms a grid-like interconnected channel, and extends from the empty area 22 to the outer area 3 in multiple directions. When the glass substrate 1 is subjected to stress, the grooves 4 make the stress dispersion effect continuous from the middle area 2 to the outer area 3 and multi-directional, further improving the stress dispersion effect, thereby preventing stress from abruptly or concentrating in a certain area of the glass substrate 1, so as to reduce or avoid local warping and / or overall warping of the glass substrate 1.
[0048] In some embodiments, continue to refer to Figure 5 The area of the groove 4 in the vacant area 22 being greater than the area of the groove 4 in the outer area 3 includes: the groove 4 in the vacant area 22 having a rectangular wave structure 42, the groove 4 in the outer area 3 having a straight line structure 43, and the width of the groove 4 in the vacant area 22 being greater than or equal to the width of the groove 4 in the outer area 3.
[0049] In other embodiments, reference is made to Figure 6 The area of the trench 4 in the vacant area 22 being greater than the area of the trench 4 in the outer area 3 includes: the trench 4 in the vacant area 22 having a sawtooth wave structure 41, the trench 4 in the outer area 3 having a straight line structure 43, and the width of the trench 4 in the vacant area 22 being greater than or equal to the width of the trench 4 in the outer area 3.
[0050] Specifically, the groove 4 is a rectangular wave structure 42 or a sawtooth wave structure 41 between several chip placement areas 21, which can easily and effectively increase the area of the groove 4 in the middle area 2, so that the area of the groove 4 in the middle area 2 is greater than the area of the groove 4 in the outer area 3.
[0051] In other embodiments, reference is made to Figure 7 The area of the trench 4 in the vacant area 22 being greater than the area of the trench 4 in the outer area 3 includes: the trench 4 in the vacant area 22 having a straight structure 43, the trench 4 in the outer area 3 having a straight structure 43, and the width of the trench 4 in the vacant area 22 being greater than the width of the trench 4 in the outer area 3.
[0052] Specifically, all the grooves 4 adopt a straight structure 43, which can easily and effectively achieve the area difference by simply adjusting the etching width. This is compatible with the conventional laser ablation process in existing glass micromachining. The straight structure 43 simplifies the laser ablation processing path and improves production efficiency. At the same time, the straight structure 43 can effectively reduce processing errors and avoid groove deformation and dimensional deviation at the bends of the grooves 4, which greatly improves the production yield of the glass carrier 1 and reduces production costs.
[0053] In some embodiments, reference Figure 3 and Figure 11 It also includes: a glass protrusion 5, located on the surface of the peripheral area 3, and the glass protrusion 5 is located outside the groove 4, and the surface of the glass protrusion 5 that does not contact the glass carrier plate 1 is arc-shaped.
[0054] Specifically, the glass protrusion 5 is disposed on the surface of the peripheral region 3 of the glass carrier plate 1, when a polymer layer 81 (see reference) is formed on the bearing surface 11 of the glass carrier plate 1 using a spin coating process. Figure 3 When the glass protrusion 5 is in contact with the glass substrate 1, it can block a portion of the polymer layer 81 material from flowing towards the edge of the glass substrate 1. Simultaneously, the arc-shaped surface of the glass protrusion 5, which is not in contact with the glass substrate 1, allows other portions of the polymer layer 81 material to flow smoothly towards the edge. This reduces the thickness of the polymer layer 81 formed in the outer region 3, and reduces the difference in thickness between the polymer layer 81 formed in the outer region 3 and the polymer layer 81 formed in other regions, thus preventing the formation of... Figure 2 The W-shaped morphology shown allows the polymer layer 81 to uniformly cover the first surface of the glass substrate 1 (e.g., Figure 3 (As shown).
[0055] In some embodiments, the number of glass protrusions 5 is one, and the glass protrusion 5 is annular, with the center of the annular glass protrusion 5 being the center of the glass carrier plate 1.
[0056] The glass protrusion 5 is a circular protrusion that allows the polymer material to flow smoothly, prevents blockage, reduces warping, and the circular structure is easy to process and inspect, thus reducing processing costs.
[0057] In some embodiments, the number of glass protrusions 5 is multiple, and the multiple glass protrusions 5 are distributed in a ring shape in the peripheral region 3 with the center of the glass carrier plate 1 as the center.
[0058] In one example, the glass protrusion 5 is a multi-segment annular protrusion, and excess polymer material can flow out through the gaps between the annular protrusions, making the overall thickness of the polymer layer 81 more uniform.
[0059] In some embodiments, reference Figures 8 to 9 The cross-sectional shape of the groove 4 along the direction perpendicular to the bearing surface 11 of the glass carrier plate 1 is rectangular (see reference). Figure 8 ) or inverted trapezoid (reference) Figure 9 ).
[0060] The groove 4 has a rectangular or inverted trapezoidal cross-sectional shape along the direction perpendicular to the bearing surface 11 of the glass carrier plate 1, forming a regular accommodating space, which is convenient for processing and manufacturing, suitable for standard process conditions, increases the capacity of polymer material, and enhances the adhesion between the groove 4 and the polymer material.
[0061] Secondly, embodiments of this application also provide a method for forming a glass carrier plate. Figure 10 This is a schematic flowchart illustrating a method for forming a glass carrier plate according to some embodiments of this application. The method for forming the glass carrier plate includes the following steps: Step S101: Provide a glass carrier plate, wherein the bearing surface of the glass carrier plate includes a central region and a peripheral region surrounding the central region, and the central region includes a plurality of discrete chip placement areas and an empty area located between adjacent chip placement areas. Step S102: A groove extending from the free area to the peripheral area is formed in the glass carrier plate, and the area of the groove formed in the free area is larger than the area of the groove formed in the peripheral area.
[0062] The method for forming the packaging structure is described in detail below with reference to the accompanying drawings in some embodiments.
[0063] First, refer to Figure 10 In conjunction with references Figure 11 In step S101, a glass carrier plate 1 is provided. The bearing surface 11 of the glass carrier plate 1 includes a central region 2 and a peripheral region 3 surrounding the central region 2. The central region 2 includes a plurality of discrete chip placement regions 21 and an empty region 22 located between adjacent chip placement regions 21.
[0064] In some embodiments, the glass carrier plate 1 further includes: A glass protrusion 5 is formed on the surface of the outer region 3 of the glass carrier plate 1, and the glass protrusion 5 is located outside the groove 4. The surface of the glass protrusion 5 that does not contact the glass carrier plate 1 is arc-shaped.
[0065] In some embodiments, the number of glass protrusions 5 is one or more.
[0066] In some embodiments, the process of forming the glass protrusion 5 includes: thinning the glass carrier plate 1 by mechanical grinding, and forming the glass protrusion 5 on the surface of the peripheral region 3 of the glass carrier plate 1.
[0067] The thinning can also be achieved using mechanical polishing or chemical mechanical polishing (CMP) techniques. Mechanical polishing involves using polishing equipment to mechanically polish the bearing surface of the glass carrier plate 1, gradually removing material to form the glass protrusion 5. Mechanical polishing or chemical mechanical polishing combines the effects of mechanical polishing and chemical etching to achieve high-precision planarization and thinning. The endpoint of the thinning support can be precisely controlled through optical detection or electrical contact detection to ensure that the surface of the glass protrusion 5 that is not in contact with the glass carrier plate 1 is arc-shaped.
[0068] In one example, the formation process of the glass protrusion 5 includes: uniformly applying an adhesive to the surface of the peripheral region 3 of the glass carrier plate 11 to form an adhesive layer; providing the glass protrusion 5; bonding the glass protrusion 5 to the surface of the peripheral region 3 of the glass carrier plate 1 using the adhesive; and curing the adhesive by heating to make the glass protrusion 5 adhere to the peripheral region 3 of the glass carrier plate 1. The adhesive has a coefficient of thermal expansion (CTE) similar to or the same as that of the glass carrier plate, and the adhesive is a dry film or benzocyclobutene.
[0069] Next, refer to Figure 10 In conjunction with references Figure 12 In step S102, a groove 4 extending from the free area 22 to the peripheral area 3 is formed in the glass carrier plate 1, and the area of the groove 4 formed in the free area 22 is larger than the area of the groove 4 formed in the peripheral area 3.
[0070] In some embodiments, the process for forming the groove 4 includes photosensitive glass method, focused power generation method, plasma etching method, laser ablation method, electrochemical discharge machining method or laser-induced etching method.
[0071] In some embodiments, the cross-sectional shape of the groove 4 along the direction perpendicular to the bearing surface 11 of the glass carrier plate 1 is rectangular or inverted trapezoidal.
[0072] In some embodiments, the area of the trench 4 formed by the vacant area 22 being greater than the area of the trench 4 formed by the outer area 3 includes: the trench 4 formed by the middle area 2 having a rectangular wave structure 42, the trench 4 formed by the outer area 3 having a straight line structure 43, and the width of the trench 4 formed by the middle area 2 being greater than or equal to the width of the trench 4 formed by the outer area 3.
[0073] In some embodiments, the area of the trench 4 formed by the vacant area 22 being greater than the area of the trench 4 formed by the outer area 3 includes: the trench 4 formed by the middle area 2 having a sawtooth wave structure 41, the trench 4 formed by the outer area 3 having a straight line structure 43, and the width of the trench 4 formed by the middle area 2 being greater than or equal to the width of the trench 4 formed by the outer area 3.
[0074] In some embodiments, the area of the trench 4 formed by the vacant area 22 being greater than the area of the trench 4 formed by the outer perimeter area 3 includes: the trench 4 formed by the middle area 2 having a straight structure 43, the trench 4 formed by the outer perimeter area 3 having a straight structure 43, and the width of the trench 4 formed by the middle area 2 being greater than the width of the trench 4 formed by the outer perimeter area 3.
[0075] Thirdly, embodiments of this application also provide a method for forming an encapsulation structure. Figure 13 This is a flowchart illustrating a method for forming a packaging structure 6 according to some embodiments of this application. The method for forming the packaging structure 6 includes the following steps: Step S201: Provide a glass carrier plate as described in any of the above; Step S202: An organic intermediary layer is formed on the bearing surface of the glass carrier plate. The organic intermediary layer includes a polymer layer on the bearing surface and metal wiring within the polymer layer. The polymer layer is formed by spin coating and fills the grooves in the glass carrier plate. Step S203: Provide a semiconductor chip, mount the semiconductor chip on the surface of the organic interposer layer directly above the chip placement area, and electrically connect the semiconductor chip to the metal wiring.
[0076] The method for forming the packaging structure is described in detail below with reference to the accompanying drawings in some embodiments.
[0077] First, refer to Figure 13 In conjunction with references Figure 14 Step S201 is performed to provide a glass carrier plate 1 as described in any of the above.
[0078] Secondly, refer to Figure 13 In conjunction with references Figure 15 In step S202, an organic intermediary layer 8 is formed on the bearing surface 11 of the glass carrier plate 1. The organic intermediary layer 8 includes a polymer layer 81 located on the bearing surface 11 and metal wiring 82 located within the polymer layer 81. The polymer layer 81 is formed by spin coating and fills the groove 4 in the glass carrier plate 1.
[0079] In some embodiments, the polymer layer 81 is made of a photosensitive polymer, such as a photosensitive epoxy resin (PI), a photosensitive polyimide resin, a photosensitive benzocyclobutene resin, or a photosensitive polybenzoxazole resin.
[0080] Specifically, the photosensitive properties of the photosensitive polymer allow it to be directly used to create trenches or vias for metal wiring 82 within the polymer layer 81 after spin coating, via exposure and development processes. This eliminates the need for additional photolithography or etching processes on the polymer layer 81 to form trenches or vias, simplifying the fabrication process of the organic interposer layer 8. When the polymer layer 81 is formed using spin coating, it also fills the trenches 4. After spin coating, the polymer layer 81 can be cured and set by heat and cooling treatments. In this application, when the polymer layer 81 is formed using a spin coating process, the groove 4 in the intermediate region 2 can accommodate more polymer material during the spin coating process, thereby effectively reducing the thickness of the polymer layer 81 in the intermediate region 2 and ensuring the uniformity of the thickness of the polymer layer 81. When the polymer layer 81 is exposed and developed, the size and positional accuracy of the trenches or vias formed in the polymer layer 81 can be improved, thereby improving the size and positional accuracy of the metal wiring 82 formed in the trenches or vias, and thus improving the electrical connection reliability between the metal wiring 82 and the semiconductor chip 9.
[0081] Finally, refer to Figure 13 In conjunction with references Figure 16 In step S203, a semiconductor chip 9 is provided and mounted on the surface of the organic interposer layer 8 directly above the chip placement area. The semiconductor chip 9 is electrically connected to the metal wiring 82.
[0082] In some embodiments, the semiconductor chip 9 is mounted on the surface of the organic interposer 8 using a flip-chip process. After mounting the semiconductor chip 9 on the surface of the organic interposer 8 directly above the chip placement area, the process further includes filling the gap between the semiconductor chip 9 and the organic interposer 8 with underfill adhesive.
[0083] In one example, the semiconductor chip 9 may include a logic chip and / or a memory chip. In one example, the logic chip may include, but is not limited to, gate arrays, cell substrate arrays, embedded arrays, application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), complex programmable logic devices (CPLDs), graphics processing units (GPUs), central processing units (CPUs), microprocessor units (MPUs), microcontroller units (MCUs), logic integrated circuits (ICs), application processors (APs), display driver ICs (DDIs), radio frequency (RF) chips, power supply chips, or complementary metal-oxide-semiconductor (CMOS) image sensors. In one example, the memory chip may include, but is not limited to, dynamic random access memory (DRAM), static random access memory (SRAM), magnetoresistive random access memory (MRAM), phase-change memory (PRAM), resistive random access memory (RRAM), or non-volatile memory chips (such as flash memory).
[0084] In some embodiments, reference Figure 17 It also includes: A molding compound 83 is formed on the organic interposer 8 to encapsulate the semiconductor chip 9; refer to Figure 18 After forming the molding layer 83, the glass substrate 1 is removed, exposing the surface of the polymer layer 81 away from the semiconductor chip 9; refer to Figure 19 A welding protrusion 84 is formed on the surface of the polymer layer 81 away from the semiconductor chip 9, and the welding protrusion 84 is electrically connected to the metal wiring 82. refer to Figure 20 The molding layer 83 and the organic interposer layer 8 are divided along the free area 22 to form several discrete encapsulation structures 7.
[0085] Specifically, the solder bumps 84 are used for electrical connections with other devices (such as substrates or packages). There can be multiple solder bumps 84 located on the surface of the polymer layer 81 away from the semiconductor chip 9. In some embodiments, the solder bumps 84 may include solder balls or metal pillars with solder balls atop the metal pillars. In one example, when the solder bumps 84 are solder balls, the material of the solder bumps 84 includes solder, which includes one or more of tin, tin-silver, tin-zinc, tin-lead, tin-indium, tin-gold, tin-copper, tin-silver-copper, tin-silver-zinc, tin-bismuth-indium, tin-zinc-indium, or tin-silver-antimony. In another example, the material of the metal pillars includes one or more of Cu, W, Al, Ti, Ag, Au, Pt, and Ni.
[0086] In some embodiments, the material of the molding layer 83 may be epoxy resin, polyimide resin, benzocyclobutene resin, or polybenzoxazole resin, with or without filler; or it may be polybutylene terephthalate, polycarbonate, polyethylene terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyethersulfone, polyamide, polyimide, ethylene-vinyl acetate copolymer, or polyvinyl alcohol, with filler. The filler may be inorganic or organic.
[0087] In one example, the process of forming the encapsulation layer 83 includes compression molding or transfer molding.
[0088] In some embodiments, it also includes: A glass protrusion 5 is formed on the surface of the peripheral region 3 of the glass carrier plate 1, and the glass protrusion 5 is located outside the groove 4; The thickness of the glass protrusion 5 is less than the thickness of the polymer layer 81.
[0089] In the description of this specification, the references to terms such as "some embodiments," "other embodiments," "ideal embodiments," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example that are included in at least one embodiment or example of this application. In this specification, the illustrative descriptions of the above terms do not necessarily refer to the same embodiments or examples.
[0090] It should be noted that, where there is no conflict, the features in the different embodiments of this application described above can be combined with each other. Furthermore, in each of the above embodiments, the focus is on describing the differences from other embodiments; other specific descriptions of the same / similar parts between the embodiments can be referred to (or referenced) interchangeably. In addition, descriptions of well-known components and technologies have been omitted in the above description to avoid unnecessarily obscuring the concepts of this application.
[0091] Although this application has been disclosed above with reference to preferred embodiments, it is not intended to limit this application. Any person skilled in the art can make possible changes and modifications to the technical solutions of this application by utilizing the methods and techniques disclosed above without departing from the spirit and scope of this application. Therefore, any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall fall within the protection scope of the technical solutions of this application.
Claims
1. A glass carrier plate, characterized by, include: The bearing surface of the glass substrate includes a central region and a peripheral region surrounding the central region. The central region includes a plurality of discrete chip placement areas and an empty area located between adjacent chip placement areas. A groove located in the glass carrier plate and extending from the free area to the peripheral area, wherein the area of the groove in the free area is larger than the area of the groove in the peripheral area.
2. The glass carrier plate according to claim 1, characterized in that, The chip placement areas are arranged in an array along a first direction and a second direction. The slots extend and intersect in the free area along the first direction and the second direction. The first direction and the second direction are both parallel to the surface of the glass substrate and are perpendicular to each other.
3. The glass carrier of claim 2, wherein, The cross-sectional shape of the groove along the direction perpendicular to the bearing surface of the glass carrier plate is rectangular or inverted trapezoidal.
4. The glass carrier of claim 1 or 3, wherein, The area of the trench in the vacant area being greater than the area of the trench in the outer area includes: the trench in the vacant area having a rectangular wave structure, the trench in the outer area having a straight line structure, and the width of the trench in the vacant area being greater than or equal to the width of the trench in the outer area.
5. The glass carrier of claim 1 or 3, wherein, The area of the trench in the vacant area being greater than the area of the trench in the outer area includes: the trench in the vacant area having a sawtooth wave structure, the trench in the outer area having a straight line structure, and the width of the trench in the vacant area being greater than or equal to the width of the trench in the outer area.
6. The glass carrier plate according to claim 1 or 3, characterized in that, The area of the trench in the vacant area being greater than the area of the trench in the outer area includes: the trench in the vacant area having a straight-line structure, the trench in the outer area having a straight-line structure, and the width of the trench in the vacant area being greater than the width of the trench in the outer area.
7. The glass carrier of claim 1, wherein, Also includes: A glass protrusion is located on the surface of the peripheral area, and the glass protrusion is located outside the groove. The surface of the glass protrusion that does not contact the glass carrier plate is arc-shaped.
8. The glass carrier plate according to claim 1, characterized in that, The glass protrusion is one in number, and the glass protrusion is in the shape of a ring, with the center of the ring being the center of the glass carrier plate.
9. The glass carrier plate according to claim 1, characterized in that, The number of glass protrusions is multiple, and the multiple glass protrusions are arranged in a circle with the center of the glass carrier plate as the center in the peripheral area.
10. A method for forming a glass carrier plate, characterized in that, Includes the following steps: A glass carrier is provided, the bearing surface of which includes a central region and a peripheral region surrounding the central region, the central region including a plurality of discrete chip placement areas and an empty region located between adjacent chip placement areas; A groove is formed in the glass substrate, extending from the free area to the peripheral area, and the area of the groove formed in the free area is larger than the area of the groove formed in the peripheral area.
11. The method for forming a glass carrier plate according to claim 10, characterized in that, The process for forming the groove includes photosensitive glass method, focused power generation method, plasma etching method, laser ablation method, electrochemical discharge machining method or laser-induced etching method.
12. The method for forming a glass carrier plate according to claim 10, characterized in that, Also includes: A glass protrusion is formed on the outer surface of the glass carrier plate, and the glass protrusion is located outside the groove. The surface of the glass protrusion that does not contact the glass carrier plate is arc-shaped.
13. The method for forming a glass carrier plate according to claim 12, characterized in that, The number of glass protrusions is one or more.
14. The method for forming a glass carrier plate according to claim 12, characterized in that, The process of forming the glass protrusion includes: thinning the glass substrate by mechanical grinding to form a glass protrusion on the surface of the outer region of the glass substrate.
15. The method for forming a glass carrier plate according to claim 10, characterized in that, The cross-sectional shape of the groove along the direction perpendicular to the bearing surface of the glass substrate is rectangular or inverted trapezoidal.
16. The method for forming a glass carrier plate according to claim 10, characterized in that, The area of the trench formed in the vacant area is greater than the area of the trench formed in the outer area, including: the trench formed in the middle area has a rectangular wave structure, the trench formed in the outer area has a straight line structure, and the width of the trench formed in the middle area is greater than or equal to the width of the trench formed in the outer area.
17. The method for forming a glass carrier plate according to claim 10, characterized in that, The area of the trench formed in the vacant area is greater than the area of the trench formed in the outer area, including: the trench formed in the middle area has a sawtooth wave structure, the trench formed in the outer area has a straight line structure, and the width of the trench formed in the middle area is greater than or equal to the width of the trench formed in the outer area.
18. The method for forming a glass carrier plate according to claim 10, characterized in that, The area of the trench formed in the vacant area is greater than the area of the trench formed in the outer area, including: the trench formed in the middle area has a straight structure, the trench formed in the outer area has a straight structure, and the width of the trench formed in the middle area is greater than the width of the trench formed in the outer area.
19. A method for forming an encapsulation structure, characterized in that, include: Provide a glass carrier plate as described in any one of claims 1 to 9; An organic intermediary layer is formed on the bearing surface of the glass carrier plate. The organic intermediary layer includes a polymer layer located on the bearing surface and metal wiring located within the polymer layer. The polymer layer is formed by a spin coating process and fills the grooves in the glass carrier plate. A semiconductor chip is provided and mounted on the surface of the organic interposer layer directly above the chip placement area. The semiconductor chip is electrically connected to the metal wiring.
20. The method for forming the packaging structure according to claim 19, characterized in that, Also includes: A molding compound layer is formed on the organic interposer layer to encapsulate the semiconductor chip; After the molding compound is formed, the carrier plate is removed to expose the surface of the polymer layer away from the semiconductor chip; A solder bump is formed on the surface of the polymer layer away from the semiconductor chip, and the solder bump is electrically connected to the metal wiring. The molding layer and organic interposer are divided along the free area to form several discrete encapsulation structures.
21. The method for forming the packaging structure according to claim 19, characterized in that, The polymer is made of a photosensitive polymer.
22. The method for forming the packaging structure according to claim 19, characterized in that, Also includes: A glass protrusion is formed on the outer surface of the outer region of the glass carrier plate, and the glass protrusion is located outside the groove; The thickness of the glass protrusion is less than the thickness of the polymer layer.