Showerhead for a semiconductor processing system

Abstract

A nozzle includes a panel having a plurality of panel through-holes extending from a first side of the panel to a second side. The nozzle further includes a back plate opposite the panel and defining an air chamber volume between the back plate and the panel. The panel through-holes include a first subset of panel through-holes, each having a first diameter when measured from the second side of the panel; a second subset of panel through-holes, each having a second diameter when measured from the second side of the panel; and a third subset of panel through-holes, each having a third diameter when measured from the second side of the panel. The second diameter is smaller than the first diameter, and the third diameter is smaller than the second diameter.

Description

[0001] References merged The PCT application form is filed together with this specification as part of this application. Each application listed in the concurrently filed PCT application form that claims a benefit or priority under this application is incorporated herein by reference in its entirety for all purposes. Technical Field

[0002] This disclosure generally relates to nozzles for semiconductor processing systems, and more particularly to nozzles having panels having panel vias configured to deposit a plurality of subsets of substantially uniform layers on a substrate. Background Technology

[0003] The background description provided herein is for the purpose of presenting the general context of this disclosure. The work of the currently designated inventors within the scope described in this background section, as well as aspects of the specification that could not be identified as prior art at the time of filing, are neither express nor implied admissions of prior art to this disclosure.

[0004] Chemical deposition systems can be used to deposit films on substrates such as semiconductor wafers. Examples of chemical deposition systems include plasma-enhanced chemical vapor deposition (PECVD) systems and chemical vapor deposition (CVD) systems. Such systems may include one or more nozzles positioned within a processing chamber to define a substrate processing area. The substrate processing area may be defined between the underside of the nozzle and a wafer support (i.e., a pedestal, substrate support, etc.), which may be positioned below each nozzle and configured to support the substrate within the substrate area. The underside of the nozzle may include orifices facing the wafer support and configured to provide one or more precursor gases to facilitate the deposition of a material layer on the substrate. The chemical deposition system may further include a foreline fluidly connected to the processing chamber for venting the precursor gases from the processing chamber. Summary of the Invention

[0005] Details of one or more implementations of the subject matter described in this specification are illustrated in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the specification, drawings, and claims.

[0006] This disclosure relates to a nozzle panel comprising three or more subsets of panel vias. Each subset of panel vias may have characteristic parameters (e.g., diameter of each panel via in the respective subset, number of panel vias, position of panel vias, etc.) and may be configured independently or relative to other subsets to allow one or more process gases to flow through the respective panel vias, causing material from one or more process gases to be deposited on a substrate to form a layer with a thickness uniformity within a predetermined range from the center to the outer edge of the substrate. In one embodiment, this uniformity may include each AtOx layer (atmospheric thermal oxide layer) having a thickness at the outer edge of the substrate that is no more than 0.5% greater than the thickness at the center of the substrate, and each nickel silicon (SiN) layer having a thickness at the outer edge of the substrate that is no more than 0.3% greater than the thickness at the center of the substrate.

[0007] This nozzle can be used in a semiconductor processing device. The nozzle includes a panel having a plurality of panel through-holes extending from a first side of the panel to a second side. The nozzle may further include a back plate opposite the panel, defining an inflation chamber volume between the back plate and the panel. The first side of the panel defines a first inner surface of the inflation chamber volume. The nozzle may further include one or more gas inlets in fluid communication with the inflation chamber volume. The panel through-holes may include a first subset of panel through-holes, each having a first diameter when measured from the second side of the panel. The panel through-holes may further include a second subset of panel through-holes, each having a second diameter when measured from the second side of the panel, the second diameter being smaller than the first diameter. The panel through-holes may further include a third subset of panel through-holes, each having a third diameter when measured from the second side of the panel, the third diameter being smaller than the second diameter.

[0008] In other implementations, the first diameter may be approximately 0.030 to 0.050 inches.

[0009] In other implementations, the first diameter may be approximately 0.035 to 0.045 inches.

[0010] In other embodiments, the number of panel vias in the first subset may be approximately 3,400 to 4,100.

[0011] In other implementations, the first subset of panel vias may account for approximately 97.50% to 99.50% of the panel vias.

[0012] In other implementations, the number of panel vias in the first subset can be 80 to 100 times the number of panel vias in the second subset.

[0013] In other implementations, the number of panel vias in the first subset can be 950 to 1050 times the number of panel vias in the third subset.

[0014] In other implementations, the second diameter may be approximately 0.020 to 0.030 inches.

[0015] In other implementations, the second subset of panel vias may be 35 to 55 of the plurality of panel vias.

[0016] In other embodiments, the second subset of panel vias may be approximately 0.08% to 2.18% of the plurality of panel vias.

[0017] In other implementations, the number of panel vias in the second subset can be 5 to 15 times the number of panel vias in the third subset.

[0018] In other implementations, the third diameter can be approximately 0.022 to 0.028 inches.

[0019] In other implementations, the number of panel vias in the third subset can be 2 to 8 of the plurality of panel vias.

[0020] In other implementations, the panel vias of the third subset may be approximately 0.05% to 0.15% of the plurality of panel vias.

[0021] In other embodiments, the panel has an X-axis and a Y-axis perpendicular to the X-axis. Both the X-axis and the Y-axis define the diameter of the panel, and the X-axis and the Y-axis may also define four quadrants of the panel.

[0022] In other embodiments, the panel vias may comprise a plurality of first hexagonal regions, each first hexagonal region being surrounded only by a first subset of panel vias.

[0023] In other embodiments, the panel via may include one or more second hexagonal regions, each second hexagonal region being defined only by the panel vias of the first subset, and the second hexagonal region having one or more second subsets of panel vias.

[0024] In other implementations, all the second hexagonal regions may be located within the panel radius AR, centered on the panel center, and the radius AR may be approximately 1.90 to 2.40 inches.

[0025] In other embodiments, the two second hexagonal regions may be arranged adjacent to each other, such that the panel vias of the two first subsets are located between the panel vias of the two second subsets.

[0026] In other embodiments, a second hexagonal region is disposed on the panel such that the second hexagonal region is mirrored along the Y-axis of the panel but not along the X-axis perpendicular to the Y-axis.

[0027] In other embodiments, the plurality of panel vias may include one or more third hexagonal regions, each third hexagonal region being defined by a first subset of panel vias, and the one or more third subset of panel vias being located within the third hexagonal region.

[0028] In other implementations, all third hexagonal regions may be located within the radius BR of the panel, where the radius BR is approximately 2.15 to 2.65 inches centered on the panel center.

[0029] In other implementations, all third hexagonal regions may be located between the radius CR and radius BR of the panel, wherein the radius CR, centered on the center of the panel, may be approximately 1.06 to 1.56 inches.

[0030] In other implementations, at least two third hexagonal regions may be arranged along the Y-axis of the panel.

[0031] In other implementations, there may not be a third hexagonal region on the X-axis of the panel.

[0032] In other implementations, no second subset of panel vias is located outside the panel radius DR, which can be approximately 1.72 to 2.22 inches centered on the panel center.

[0033] In other implementations, no third subset of panel vias is located outside the panel radius ER, which can be approximately 2.30 to 2.50 inches centered on the panel center.

[0034] In other embodiments, at least four third subset panel vias form a diamond pattern, and at least two first subset panel vias may be located within the diamond pattern.

[0035] Based on the specific embodiments provided below, it should be understood that the further scope of the applicability of this disclosure will become apparent. The detailed descriptions and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure. Attached Figure Description

[0036] This disclosure will be more fully understood in light of the detailed description and accompanying drawings, in which: Figure 1 A schematic diagram of an exemplary semiconductor processing system is shown, the processing chamber being configured with an interior and a nozzle, the nozzle being configured to allow one or more process gases to flow into the interior of the processing chamber.

[0037] Figure 2 Depicting Figure 1An isometric view of the nozzle, with a portion of the nozzle partially cut to depict the backplate, panel, the air chamber volume between the backplate and panel, and the non-porous baffle located within the air chamber volume.

[0038] Figure 3 An isometric view depicting another type of nozzle with a porous baffle.

[0039] Figure 4 Depicting Figure 3 An enlarged isometric sectional view of the porous baffle in a low-volume nozzle.

[0040] Figure 5 Depicting Figure 2 The bottom plan view of the nozzle depicts a panel with three subset panel vias, each subset panel via having independent and / or relative characteristic parameters configured to allow one or more process gases to flow through the respective panel vias and deposit material from one or more process gases onto the substrate to form a substantially uniform layer from the center of the substrate to the outer edge of the substrate.

[0041] Figure 6 Depicting Figure 5 An enlarged cross-sectional view of region A of the middle panel shows an implementation scheme in which the panel includes a first subset of panel through holes, a second subset of panel through holes, and a third subset of panel through holes.

[0042] Figure 7 Depicting Figure 5 An enlarged cross-sectional view of region B of the middle panel, showing the central region of the panel, which has a portion of the first subset panel through-hole and a portion of the second subset panel through-hole.

[0043] Figure 8 Depicting Figure 5 An enlarged cross-sectional view of region C of the middle panel, which depicts the peripheral region of the panel that is offset from the central region, and includes the third subset panel via and another part of the first subset panel via.

[0044] Figure 9 An enlarged view of the central portion of a test panel structure with two subset panel through-holes is depicted.

[0045] Figure 10A Depicting and Figure 9 The first heatmap result associated with the test panel structure, Figure 10B It then describes the relationship with Figure 5 The second thermal map results are associated with the nozzle having a panel. Each thermal map reflects the average layer thickness at multiple locations from the center of the corresponding substrate to the outer edge of the substrate.

[0046] Figure 11A thermal map depicting shadows representing the thickness distribution of the deposited layer on the substrate, along with a schematic diagram of the substrate, shows 49 locations where the thickness of the deposited layer was measured, corresponding to... Figure 9 The test panel structure and Figure 5 The results from the panel.

[0047] Figure 12 Depicting Figure 5 An enlarged cross-sectional view of certain area B of the middle panel, showing the peripheral area offset from the center area of ​​the panel, and including the panel vias of the third subset and another part of the panel vias of the first subset. Detailed Implementation

[0048] The nozzle 112 panel 126 includes three or more subsets of panel vias 127, each subset having different characteristic parameters, such as the panel via diameter, number of panel vias, panel via location, or similar parameters. These parameters can be configured independently or relative to each other to allow one or more process gases to flow through the corresponding panel vias 127 and deposit materials from one or more processes onto the substrate 110. The thickness uniformity of the material-deposited layer from the center to the outer edge of the substrate should be within a predetermined range. For example, the thickness of each atmospheric thermal oxide layer (AtOx) or oxide layer at the outer edge of the substrate is less than 0.5% greater than its thickness at the center of the substrate. In another example, the thickness of each nickel silicon (SiN) layer at the outer edge of the substrate is less than 0.3% greater than its thickness at the center of the substrate, and so on.

[0049] In some embodiments, the panel vias comprise or substantially comprise only three subsets, each with a different diameter and distributed across different areas of the panel. In some embodiments, the first subset has the largest panel via diameter, the second subset the second largest, and the third subset the smallest. In some embodiments, all panel vias in the three subsets have approximately the same diameter. In some embodiments, the first subset has the most panel vias and the widest distribution on the panel (occupying the largest area of ​​the panel) compared to the other subsets. In some embodiments, the panel vias in the first subset are arranged in repeating geometric units, such as repeating hexagons. In some embodiments, certain repeating geometric units surround portions of the panel vias in the second or third subset. In some embodiments, the second subset has the second largest number of panel vias and the second largest distribution area on the panel after the first subset.

[0050] In some embodiments, the panel vias of the first subset are relatively uniformly distributed radially and azimuthally across the panel surface. In contrast, the panel vias of the second and third subsets may be limited to specific radial or azimuthal regions, or both. In some embodiments, the positions of the panel vias of the second and / or third subsets are influenced by a baffle located off-center from the panel center at a defined azimuth angle. In some embodiments, the panel vias of the second and / or third subsets are located at azimuthal positions aligned with or opposite to the azimuth position of the baffle.

[0051] The following exemplary illustrations and discussion list characteristic parameter values ​​for some of the three subsets of panel vias. Any one or more parameters can independently depict the panel via pattern. In other words, while the illustrations and related discussion show multiple combinations of panel features, this disclosure covers many other combinations, some of which may not include one or more of the features disclosed.

[0052] refer to Figure 1 The semiconductor processing system 100 (e.g., a chemical deposition system, a thermal processing system, etc.) has a processing chamber 102, which includes an internal volume 104 and one or more exhaust ports 106. The semiconductor processing system 100 also includes one or more wafer supports 108 located within the internal volume 104 for supporting corresponding substrates 110 during one or more semiconductor processing operations (e.g., deposition, preparation, or thermal processing) performed within the internal volume 104. In this embodiment, the semiconductor processing system 100 further includes one or more nozzles 112 located above the corresponding wafer supports 108; the nozzles 112 can be used to infuse one or more process gases into the substrates 110 during processing operations.

[0053] Generally, the nozzle 112 can be divided into two types: pendant nozzles and recessed nozzles. Pendant nozzles have a rod, one end of which is attached to the top of the chamber, and the other end connects to a panel or backplate. A portion of the rod can protrude from the top of the chamber for connecting gas lines and RF power. Recessed nozzles are integrated into the top of the treatment chamber 102 and may not have a rod. Although Figure 2-4 The chandelier-style sprinkler head is generally described, but this disclosure also applies to recessed sprinkler heads.

[0054] Figure 2 Showing Figure 1One embodiment of the nozzle 112. The nozzle 112 includes a rod 114 defining a channel 115, the channel 115 being configured to connect to one or more gas supply sources (e.g., a gas distribution system) of the semiconductor processing system 100 and to receive one or more process gas streams, such as reactant gases or purge gases, from the one or more gas supply sources. In this embodiment, the rod 114 may include a narrow tube 116 fluidly connected to the gas distribution system and an expansion tube 118 fluidly connected to the narrow tube 116. The diameter of the expansion tube 118 is larger than the diameter of the narrow tube 116 to provide a more spatially distributed airflow to the filling chamber volume 120, as discussed below.

[0055] The nozzle 112 also includes a back plate 122 having one or more gas inlets 124 that are fluidly connected to an inflation chamber volume 120 (i.e., one or more gas inlets 124 are fluidly inserted between a channel 115 of an expansion tube 118 of a rod 114 and the inflation chamber volume 120). The one or more gas inlets 124 may be connected via the rod 114 to one or more gas supply sources (gas supply systems) to receive one or more process gas streams.

[0056] Nozzle 112 also includes a panel 126 located on the opposite side of backplate 122. Panel 126 includes a plurality of panel through-holes 127 extending from a first side 128 to a second side 130 for delivering gas to substrate 108. Panel 126 and backplate 122 may be separate mechanical components or integrated into a single body. Inflation chamber volume 120 is defined between panel 126 and backplate 122, wherein the first side 128 of panel 126 defines a first inner surface of inflation chamber volume 120, and the first side 129 of backplate 122 defines a second inner surface of inflation chamber volume 120. The total volume of nozzle 112 may exceed 500 ml (e.g., 743 ml). In some embodiments, panel 126 and / or backplate 122 may have a circumferential surface 132 facing radially inward of inflation chamber volume 120 and at least partially defining inflation chamber volume 120. Typically, the diameter of the first inner surface of the inflation chamber volume 120 can be similar to or substantially similar to the diameter of the substrate 110 (to which the nozzle 112 is configured for use). In some embodiments, such as Figure 2 As shown, the second inner surface of the air chamber volume 120 can define the basic conical portion of the air chamber volume 120.

[0057] One or more process gases may be supplied to the inflation chamber volume 120 via one or more gas inlets 124. The nozzle 112 may further include one or more baffles 133 (e.g., one or more porous or non-porous baffles, support structures, sensors such as one or more thermocouples, etc.) in the inflation chamber volume 120, which may inhibit the flow of one or more process gases in the direction from one or more gas inlets 124 toward one or more panel through-holes 127.

[0058] In this embodiment, the nozzle 112 may include a non-porous baffle 133 embedded in the inflation chamber volume 120. The baffle 133 may be a solid or non-porous structure mounted in the inflation chamber volume 120 to guide gas outwards to various locations within the inflation chamber volume 120 and toward the edge of the panel 126. The baffle 133 may be located near the gas inlet 124. The baffle 133 may be mounted at a distance from the gas inlet 124 to allow gas distribution within the inflation chamber volume 120. The baffle 133 may be located centrally below the rod 114 to avoid or reduce the impact of airflow passing directly through the center of the panel 126. For example, a large non-porous baffle 133 may have a diameter of 2.10 inches. The diameter of the non-porous baffle 133 may be larger than the diameter of the expansion tube 118 in the nozzle 112. However, the volume of the inflation chamber 120 can be increased to accommodate the non-porous baffle 133 below the rod 114 to achieve sufficient flow uniformity. The increased inflation chamber volume can be provided via a conical portion of the inflation chamber 120 to allow the airflow to be distributed outwards. The back plate 122 can be tilted rearward to provide the conical portion of the inflation chamber 120. In other words, the second surface of the inflation chamber 120 can be conical to provide more space between the gas inlet 124 and the baffle 133. In some embodiments, the baffle 133 can be circular with a diameter larger than that of the expander tube 118. Better flow uniformity can be obtained by directing the gas flow to various parts of the inflation chamber 120. Furthermore, the baffle 133 can be located approximately at the center of the gas inlet 124 to avoid or reduce the flow rate of gas across the center of the panel 126.

[0059] refer to Figure 3 Another implementation scheme for nozzle 212 (i.e., low-volume nozzle) is similar to... Figure 2 The nozzle 112 is somewhat similar. To avoid excessive repetition, Figure 2 In and Figure 3 The components shown are similar to those in Figure 3 The numbers marked with the last two digits being the same are designated as such. Therefore, unless otherwise specified, the above refers to... Figure 2 The relevant discussion of the components in the text can be applied to Figure 3Similar components in [the text]. Since similar components have already been discussed previously, for the sake of brevity, the discussion of these components will not be repeated. It should be understood that the content of the previous discussion applies to [the text]. Figure 3 Similar components in [the text].

[0060] Although Figure 2 The nozzle 112 may include a second inner surface (i.e., the first surface 129 of the back plate 122) of a conical inflation chamber volume 120, which defines the basic conical portion of the inflation chamber volume 120, but Figure 3 The low-volume nozzle 212 may include a second inner surface (i.e., the first surface 229 of the backplate 222) of a planar air chamber volume 220, which partially defines the air chamber volume 220 having a cylindrical or substantially cylindrical shape. This can reduce the overall internal volume of the nozzle 212 because the air chamber volume 220 is smaller than that of a conventional nozzle. Figure 2 The air chamber in the middle has a relatively small volume of 120.

[0061] Although Figure 2 The nozzle 112 includes a non-porous baffle 133, but Figure 3 The low-volume nozzle 212 may include a porous baffle 233 (e.g., a perforated baffle). In some embodiments, the porous baffle 233 may be recessed into region 235, wherein the porous baffle 233 may be mounted at a distance from the gas inlet 224 and above the inflation chamber volume 220. While the porous baffle 233 may be located in region 235, it should be understood that in other embodiments, the porous baffle 233 may be located within the inflation chamber volume 220. Thus, the porous baffle 233 may be mounted at a distance from the gas inlet 224 and extend within region 235. Region 235 may be a recessed volume of the backplate 222. Region 235 provides a transition area for airflow between the gas inlet 224 and the inflation chamber volume 220. In some embodiments, region 235 may be recessed into a first side 229 of the backplate 222, wherein the first side 229 of the backplate 222 defines a second surface of the inflation chamber volume 220. While it is understood that the porous baffle 233 may be positioned in the region 235 between the inflation chamber volume 220 and the gas inlet 224, it will be apparent to those skilled in the art that region 235 may also be considered part of the gas inlet 224, and the porous baffle 233 may be located within the gas inlet 224. However, although located within the gas inlet 224, unlike obstructing gas flow, the pores of the porous baffle 233 allow gas to flow through.

[0062] In some embodiments, each of rod 214, region 235, and inflation chamber volume 220 defines a cylindrical volume, wherein the diameter of inflation chamber volume 220 is larger than the diameter of region 235, and the diameter of region 235 is larger than the diameter of rod 214. Figure 3The small porous baffle 233 in the middle can be significantly smaller than Figure 2 The large non-porous baffle 133 is used. In some embodiments, the small porous baffle 233 may have a diameter between approximately 0.1 inches and 2.0 inches (e.g., 0.79 inches in diameter).

[0063] Baffle 233 may be selectively porosity, with a porosity ranging from about 5% to 25%. In some embodiments, baffle 233 may comprise or be made of a porous material. Examples of porous materials include porous aluminum, porous alumina, porous quartz, and stainless steel. These materials should be compatible with remote cleaning and should have passivating properties or be resistant to reaction with ammonia / fluorine radicals.

[0064] Figure 4 Depicting Figure 3 An enlarged isometric sectional view of a porous baffle in a low-volume nozzle. (e.g.) Figure 4 As shown, in some embodiments, the baffle 233 may include a plurality of through holes 233a extending through the baffle 233. These through holes 233a can be formed through the material of the baffle 233 to effectively simulate and mimic porosity. In some embodiments, the baffle 233 may be circular, and its diameter may be larger than the diameter of the rod 214. However, in other embodiments, the size of the baffle 233 is significantly smaller than that of the panel 226. For example, the diameter of the panel 226 is at least four times, or even ten times, the diameter of the baffle 233. Furthermore, the diameter of the baffle 233 may be smaller than the diameter of the region 235. Therefore, the airflow can not only pass through the through holes 233a, but also flow outward to various parts of the inflation chamber volume 220 and flow toward the edge of the panel 226. By allowing the airflow to pass through the through holes 233a and disperse outward to the inflation chamber volume 220, the overall internal volume of the nozzle 212 can be reduced (compared to...). Figure 2 While achieving a more uniform spatial airflow distribution (at the nozzle 112), the baffle 233 is located approximately at the center of the gas inlet 224, so that the position and porosity of the baffle help reduce the impact of airflow directly penetrating the center of the panel 226. In some embodiments, the baffle 233 may be substantially parallel to the first and second inner surfaces of the inflation chamber volume 220.

[0065] In addition, although Figure 2 The total volume of the nozzle 112 can exceed 500 ml (e.g., 742.7 ml). Figure 3The total volume of the low-volume nozzle 212 can be approximately equal to or less than 500 ml (e.g., between approximately 50 ml and 500 ml, or between approximately 100 ml and 300 ml, etc.). In some embodiments, the volume of the inflation chamber 220 can be between approximately 50 ml and 500 ml (e.g., 256.4 ml). The reduction in internal volume from nozzle 112 to low-volume nozzle 212 results in a "volume loss," which adversely affects the flow uniformity of panel 226. To avoid this volume loss in low-volume nozzle 212, a small porous baffle 233 can be placed in region 235 to improve flow uniformity. The diameter of the small porous baffle 233 and the size, number, and arrangement of the through holes 233a therein can effectively guide airflow into inflation chamber 220, thereby improving flow uniformity on panel 226.

[0066] The volume of the rod 214 can be between about 1 ml and about 50 ml in some embodiments. Providing a narrow tube 216 as an integral part of the rod 214 also reduces the overall internal volume of the nozzle, because Figure 3 The diameter of the narrow tube 216 in the middle is less than Figure 2 The expansion tube 118 in the middle.

[0067] refer to Figures 5 to 8 , Figure 2 Panel 126 in the text is similar to the content discussed in detail below. Figure 3 Panel 226 in the [reference needed]. Therefore, unless otherwise specified, refer to the following [reference needed]. Figures 5 to 8 The discussion of the components related to panel 126 provided should be understood to also apply to... Figure 3 Similar components to panel 226. For brevity, refer to... Figures 5 to 8 The discussion of the components of panel 126 (which is redundant with respect to similar components of panel 226) will not be repeated, but it will be understood that it applies to these similar components. Panel 126 can be used as a separate component or as an integral part of any applicable nozzle.

[0068] like Figure 5 As shown, panel 126 has an X-axis 134 and a Y-axis 136, which are perpendicular to each other and intersect at the center 138 of panel 126, and the X and Y axes 134, 136 define the diameter of panel 126. Panel 126 has a central region 140 including the center 138 (i.e., Figure 5 The panel 126 includes region A), outer edge region 142 (e.g., without panel through-holes in this embodiment), and a peripheral region 144 radially concentrically interposed between the central region 140 and the outer edge region 142. X and Y axes 134, 136 define four quadrants Q1, Q2, Q3, Q4 of the panel 126.

[0069] like Figure 6As shown, the panel vias 127 include panel vias of a first subset 146, a second subset 148, and a third subset 150, distributed across multiple regions and having one or more characteristic parameter values, such as relative to the X and Y axes 134, 136, relative to quadrants Q1, Q2, Q3, Q4, relative to each other, relative to one or more baffles 162 in the gas chamber volume 120, characteristic parameter values ​​independent of the nozzle, or combinations thereof. The arrangement of the three subsets of panel vias 146, 148, and 150 allows one or more process gases to flow to the substrate 110, causing the material in the process gases to be deposited in layers on the substrate 110 in a manner with desired uniformity. For example, layer thickness uniformity from the center to the outer edge of the substrate can reach a predetermined range. In some cases, the thickness of each AtOx or oxide layer in the outer edge region of the substrate is less than 0.5% higher than the thickness in the central region, and / or the thickness of each SiN layer in the outer edge region of the substrate is less than 0.3% higher than the thickness in the central region.

[0070] refer to Figure 6 The panel via 127 comprises a plurality of first hexagonal regions HA1 defined only by the panel vias of the first subset 146. For example, each first hexagonal region HA1 has six vertices, each vertex coinciding with the center of a corresponding panel via in the first subset of panel vias. In the figure, for illustration purposes, each first hexagonal region HA1 is surrounded by a dashed circle. Reference Figure 8 The image shows a first hexagonal region HA1 surrounded by a dashed circle. Within this circle are six panel vias of a first subset 146, which define the first hexagonal region HA1. The first hexagonal region HA1 has a point-like boundary and six vertices, two of which are labeled V1, and each vertex coincides with a corresponding panel via of the first subset 146. For example, vertex V1 coincides with panel via 146A. No other panel vias are located within any of these first hexagonal regions HA1. For example, the panel vias of the second subset 148 and the third subset 150 are not located within any of the first hexagonal regions HA1.

[0071] Multiple first hexagonal regions HA1 are distributed approximately evenly within the first region in a repeating pattern. In some embodiments, the first region may include a peripheral region 144. Figure 5 ) and the portion of the central region 140 (i.e., region A) radially interposed between the peripheral region 144 and one or more second hexagonal regions HA2 and one or more third hexagonal regions HA3, such as Figure 8As detailed in the description. In other embodiments, panel vias 127 may be omitted or not arranged in the first hexagonal region HA1, but instead arranged in the form of regions with repeating patterns of other suitable polygonal shapes with three or more sides (e.g., triangles, quadrilaterals, pentagons, heptagons, octagons, nonagons, decagons, etc.). These regions with other suitable polygonal shapes are again defined by the panel vias of the first subset 146. In these cases, the vertices of these polygonal shapes coincide with the center of the panel vias of the first subset 146. In these embodiments, the panel vias of the second or third subsets 148 and 150 are not located therein.

[0072] Each panel via of the first subset 146 has a first diameter when measured from the second side 130 of the panel 126. In one embodiment, the first diameter is approximately 0.030 to 0.050 inches, approximately 0.035 to 0.045 inches, and may be approximately 0.040 inches. The panel vias of the first subset 146 may account for approximately 3,400 to 4,100 of the total number of panel vias 120 in the panel 126 (e.g., approximately 3,931 of the total number of panel vias 127 out of a total of 3,978). The panel vias of the first subset 146 may provide approximately 97.50% to 99.50% of the total number of panel vias 120 in the panel 126 (e.g., approximately 98.82% of the total number of panel vias 127). The panel vias of the first subset 146 may be 80 to 100 times the panel vias of the second subset 148 (e.g., about 91.42 times the panel vias of the second subset 148), and the panel vias of the first subset 146 may be 950 to 1,050 times the panel vias of the third subset 150 (e.g., about 982.75 times the panel vias of the third subset 150).

[0073] As described above, the panel via 127 includes one or more second hexagonal regions HA2, defined by the panel vias of the first subset 146, and one or more panel vias of the second subset 148 are located within the second hexagonal regions HA2. For example, like the first hexagonal region HA1, each second hexagonal region HA2 has six vertices, each vertex coinciding with the center of a panel via of the first subset 146. Figure 6 In the diagram, each of the second hexagonal regions HA2 is surrounded by a dashed circle. (See reference) Figure 12The image shows a second hexagonal region HA2 surrounded by a dashed circle. Within this circle are six panel vias of the first subset 146, which define the second hexagonal region HA2. The second hexagonal region HA2 has a point boundary and six vertices, two of which are labeled V2, and each vertex coincides with the center of a corresponding panel via of the first subset 146. For example, a vertex V2 coincides with panel via 146B. A panel via of the second subset 148 is located within the second hexagonal region HA2. In some cases, more than one panel via of the second subset 148 may be located within the second hexagonal region HA2. Figure 12 In one implementation, a single panel via of the second subset 148 is located at the center of the second hexagonal region HA2 and is equidistant from the six panel vias of the first subset 146.

[0074] All second hexagonal regions HA2 can be evenly distributed within the second region in a repeating pattern. The second region is located within a radius AR of panel 126 centered at panel center 138 (e.g., ...). Figure 6 As shown), and independent of the first and third regions, with a radius AR of approximately 1.90 to 2.40 inches. Two second hexagonal regions HA2 are arranged relative to each other (e.g., adjacent) such that the panel vias of the two first subsets 146 are located between the panel vias of the two second subsets 148 (e.g., along a reference line extending between the panel vias of the two second subsets 148). The arrangement of the second hexagonal regions HA2 on panel 126 is such that the second hexagonal regions HA2 are mirrored along the Y-axis 136 of panel 126 but not along the X-axis 134. At the radius DR of panel 126 (e.g., ... Figure 6 There are no panel vias in the second subset 148 other than those shown, and the radius DR of the circle centered at panel center 138 is approximately 1.72 to 2.20 inches. In other embodiments, the plurality of panel vias 127 may omit the second hexagonal region HA2 and instead have regions with a repeating pattern of other suitable polygonal shapes with three or more sides (such as triangles, quadrilaterals, pentagons, heptagons, octagons, nonagons, decagons, etc.), which are jointly defined by the panel vias of the first subset 146 and one or more panel vias of the second subset 148.

[0075] Each panel via of the second subset 148 has a second diameter when measured from the second side 130 of the panel 126, the second diameter being smaller than the first diameter of each panel via of the first subset 146. In one embodiment, the second diameter is approximately 0.020 to 0.030 inches, and the panel vias of the second subset 148 provide approximately 35 to 55 of the total number of panel vias 127 in the panel 126 (e.g., approximately 43 panel vias out of a total of 3,978 panel vias 127). The panel vias of the second subset 148 may account for approximately 0.08% to 2.18% of the total number of panel vias 127 in the panel 126 (e.g., 1.08% of the total number of panel vias 127, etc.). The panel vias of the first subset 146 are 80 to 100 times the number of panel vias of the second subset 148 (e.g., approximately 91.42 times the number of panel vias of the second subset 148). The panel vias of the second subset 148 are 5 to 15 times the number of panel vias of the third subset 150 (for example, about 10.75 times the number of panel vias of the third subset 150).

[0076] As described above, the panel via 127 includes one or more third hexagonal regions HA3, defined by the panel vias of the first subset 146, and one or more panel vias of the third subset 150 are located within the third hexagonal region HA3. For example, like the first hexagonal region HA1, each third hexagonal region HA3 has six vertices, each vertex coinciding with the center of the corresponding panel via of the first subset 146. Figure 6 In the diagram, each third hexagonal region HA3 is surrounded by a dashed circle. (See reference) Figure 8 The diagram shows four third hexagonal regions HA3, surrounded by dashed circles. Within each circle are six panel vias of the first subset 146, defining the third hexagonal region HA3. One of the third hexagonal regions HA3 is shown with a point-like boundary and six vertices, two of which are labeled V3, and each vertex coincides with the center of a corresponding panel via of the first subset 146. For example, a vertex V3 coincides with panel via 146C. A panel via of the third subset 150 is provided within each third hexagonal region HA3. In some cases, more than one panel via of the third subset 150 may be located within the third hexagonal region HA3. Figure 8 In one implementation, a single panel via of the third subset 150 is located at the center of the third hexagonal region HA3 and is equidistant from the six panel vias of the first subset 146.

[0077] All third hexagonal regions HA3 can be uniformly distributed within the third region in a repeating pattern, and the third region is located within a radius of BR of panel 126 (e.g. Figure 6As shown), and separate from the first and second regions. The third region may be offset from the center 138 of the panel to the location of the baffle 133 in the inflation chamber volume 120 (e.g., a thermocouple). The radius BR of the circle centered at the center 138 of the panel 126 may be approximately 2.15 to 2.65 inches. In this embodiment, all third hexagonal regions HA3 are located within the radius CR of the panel 126 (e.g., as shown). Figure 6 (As shown) Between the radius BR and the radius CR, the radius CR, centered at the center 138 of panel 126, is approximately 1.06 to 1.56 inches. For example... Figure 6 and Figure 7 As shown, at least two third hexagonal regions HA3 are distributed along the Y-axis 136 of panel 126, while no third hexagonal region HA3 is located on the X-axis 134 of panel 126. Furthermore, in this embodiment, the panel vias of the third subset 150 are not located outside the radius ER of panel 126 (e.g., Figure 6 As shown), the radius ER of the circle centered at the center 138 of panel 126 is approximately 2.30 to 2.50 inches. Figure 8 As shown, at least four panel vias of the third subset 150 form a rhombus pattern containing acute angles of up to 20 degrees, and at least two panel vias of the first subset 146 are located within this rhombus pattern. In other embodiments, the plurality of panel vias 127 may omit the third hexagonal region HA3 and instead have regions with repeating patterns of other suitable polygonal shapes with three or more sides (such as triangles, quadrilaterals, pentagons, heptagons, octagons, nonagons, decagons, etc.), which are jointly defined by the panel vias of the first subset 146 and one or more panel vias of the third subset 150.

[0078] Each panel via of the third subset 150 has a third diameter, which is smaller than the second diameter, when measured from the second side 130 of the panel 126. In one embodiment, the third diameter is approximately 0.022 to 0.028 inches, and the panel vias of the third subset 150 can provide 2 to 8 of the total number of panel vias 127 in the panel 126 (e.g., approximately 4 of the total number of panel vias 127). The panel vias of the third subset 150 can account for approximately 0.05% to 0.15% of the total number of panel vias 127 in the panel 126 (e.g., approximately 0.10% of the total number of panel vias 127). The panel vias of the first subset 146 are 950 to 1,050 times the number of panel vias of the third subset 150 (e.g., approximately 982.75 times the number of panel vias of the third subset 150). The panel vias of the second subset 148 are 5 to 15 times the number of panel vias of the third subset 150 (e.g., about 10.75 times the number of panel vias of the third subset 150).

[0079] The panel via characteristic parameters of the first subset 146, the second subset 148, and the third subset 150 are as described above. These parameters are configured to be set independently or relative to each other to allow one or more process gases to flow through the corresponding panel via 127 and to deposit material from one or more process gases onto the substrate 110, forming a layer with a thickness uniformity within a predetermined range extending from the center of the substrate to the outer edge of the substrate. In a non-limiting embodiment, the panel via of the third subset 150 may be located in a third region of the panel 126 (e.g., Figure 5 Region C in the diagram, located at radius BR of panel 126. Figure 6 The radius CR shown is approximately 2.15 to 2.65 inches, with the center 138 of panel 126 as the center, and the radius CR is approximately 1.06 to 1.56 inches. This location allows one or more process gases to reach certain areas of the inflation chamber volume 120 more quickly, but there are local structural constraints (such as baffles, support members, sensors, and other obstructions within the inflation chamber volume) that allow the deposition rate to be adjusted near the area directly below the third subset 150 to offset the shading effect of the local structural constraints (e.g., a higher deposition rate compared to a panel without panel vias at this location).

[0080] In some examples, the deposition thickness on the substrate portion facing the third region can be more consistent with other substrate regions not directly facing the structurally constrained gas chamber region. In some cases, the uniformity of the deposition thickness can be within 0.5% of the average deposition thickness across the entire substrate. In another non-limiting embodiment, the panel vias of the third subset 150 can be arranged in a diamond pattern within the third region to guide the flow of one or more process gases relative to the structural constraints of the corresponding pattern arrangement. Without the diamond arrangement of the third subset 150, one or more process gases may over-flow to the substrate portion facing the third region of the panel, resulting in a deposition thickness on that substrate portion exceeding 0.5% of the average deposition thickness across the entire substrate. Strategic placement and arrangement of the panel vias of the third subset can alter the gas flow rate to that region. In some embodiments, arranging the panel vias of the third subset in a diamond pattern relative to the panel vias of the surrounding first and second subsets helps to provide a more uniform deposition result.

[0081] In another non-limiting embodiment, the diameter of each panel via in the third subset 150 can be approximately 0.022 to 0.028 inches, because diameters exceeding this range may also increase the flow rate of one or more process gases to the substrate portion facing the third region of the panel, causing the thickness of the deposited layer on that substrate portion to be more than 0.5% higher than the average thickness of the deposited layer across the entire substrate. For these and other panel characteristic parameters, whether individually or collectively configured, the thickness of each AtOx layer (i.e., oxide layer) in the outer edge region of the substrate can be less than 0.5% higher than the thickness in the central region of the substrate, and the thickness of each SiN layer in the outer edge region of the substrate can be less than 0.3% higher than the thickness in the central region of the substrate.

[0082] Figure 9 The central portion of a test panel structure (“test structure”) with a nozzle is shown, its panel vias configured to allow for more uniform deposition in the central region of the substrate layer. Although Figures 5 to 8 and Figure 12 Panel 126 includes three subsets of panel vias (i.e., first subset 146, second subset 148, and third subset 150) and three hexagonal regions (i.e., first hexagonal region HA1, second hexagonal region HA2, and third hexagonal region HA3), but Figure 9 The test structure contains only two subsets of panel through-holes (i.e., the panel through-holes of the first subset 346 and the panel through-holes of the second subset 348) and two types of hexagonal regions (i.e., multiple first hexagonal regions HA1' and multiple second hexagonal regions HA2'). The second hexagonal region HA2' is located in the central region of the panel and can increase the gas passage under the baffle 333 in the inflation chamber volume to reduce the non-uniformity caused by the baffle in the inflation chamber.

[0083] Figure 10A It shows something similar to Figure 9 The simulated test results (heat map) of the test structure of the panel pattern shown. Figure 10B Displayed with Figures 5 to 8 and Figure 12 Simulation results (thermal image) of the panel with the shown through-hole pattern. Used to generate Figure 10A and Figure 10B The nozzles have the same structural constraints in their gas chambers (e.g., baffles, supports, and internal pillars are in the same location), but the through-hole patterns / distributions of the nozzles differ. Each thermal map contains dark areas representing potential unevenness in deposition thickness within the gas chamber volume due to structural limitations. In other words, these two thermal maps represent the relative average deposition thickness at different locations on the substrate, generated by two corresponding deposition processes (e.g., AtOx and SiN deposition processes) using one of the two process gases, and this deposition thickness may be affected by the structural constraints within the gas chamber volume of the corresponding test structure and the nozzle.

[0084] exist Figure 10A In the first thermal image 402, the average deposition thickness corresponds to the first simulated substrate result produced by one of two deposition processes (e.g., AtOx or SiN deposition processes). Although the configuration of the second hexagonal region HA2 appears to result in more uniform deposition in the substrate region below the baffle (region D), deposition non-uniformity is still observed near or within the edge portion of the first region D. Figure 10B In the second thermal image 404, there are fewer dark areas than in the first thermal image 402, indicating that the panel 126 is configured to achieve better uniformity in the first region D of the substrate and its surrounding area. This better uniformity (at least partially) is achieved through... Figures 5 to 8 and Figure 12 This is achieved through a combination of features of the nozzles. For example, by means of a second region (i.e., within a radius AR centered on the center 138 of panel 126, such as...) Figure 6 As shown, the second hexagonal region HA2 is arranged in a spaced distribution pattern with a radius AR of approximately 1.90 to 2.40 inches centered on the center 138, and in the third region (i.e., offset from the center 138 of the panel 126 and within the radius BR of the panel 126, as shown) Figure 6 As shown, one or more third hexagonal regions HA3 are added at a radius BR (approximately 2.15 to 2.65 inches from the center 138 of panel 126) to further reduce the shading effect that causes unevenness.

[0085] As shown in the figure, the first thermal image 402 includes a first region D (i.e., the central portion of the first region D facing the test structure, with its panel through-holes located near baffle 333). The first thermal image 402 further includes a second region E surrounded by but excluding the first region D (i.e., a portion of the second region E facing the test structure, with its panel through-holes located between baffle 333 and one or more structural constraints). The darker shading in region E relative to region D indicates a non-uniformity in the deposit thickness within region E compared to region D (e.g., the deposit thickness in region E is lower than that in region D). The first thermal image 402 further includes a third region F surrounding and excluding the first region D and the second region E (i.e., a portion of the third region F facing the test structure, with its panel through-holes located radially outside one or more structural constraints within the inflation chamber volume). The darker shading in region F compared to region D indicates a non-uniformity in the deposit thickness within region F compared to region D (e.g., the deposit thickness in region F is lower than that in region D). While the second hexagonal region HA2 at the center of the panel of the test structure provides better deposition uniformity for the first region D, in some processes, the baffle 333 within the inflation chamber volume and one or more structural constraints may cause uneven deposition around the edges of the baffle 333 (e.g., near or located at the outer edge of the first region D, such as the second region E and the third region F). As shown, the second thermal image 404 includes a first region G (i.e., the central portion of the first region G facing the panel 126, with its panel vias located near the baffle 133), a second region H surrounded by but excluding the first region G (i.e., a portion of the second region H facing the panel 126, with its panel vias located between the baffle 133 and one or more structural constraints), and a third region I surrounding and excluding the first region G and the second region H (i.e., a portion of the third region I facing the panel 126, with its panel vias located radially outside one or more structural constraints in the inflation chamber volume 120). In the second thermal image 404, the overall shadows of the first region G, the second region H, and the third region I associated with the panel 126 are lighter than those of the first region D, the second region E, and the third region F in the first thermal image 402. Therefore, a nozzle featuring the characteristics of the panel 126 can achieve better uniformity. Notably, the arrangement of the second hexagonal region HA2 and the third hexagonal region HA3 in the panel 126 improves the uniformity of the deposited layer across the entire substrate (including the first region G, the second region H, and the third region I).

[0086] Figure 11 A schematic diagram is shown, depicting 49 measurement points on which measurements are taken by... Figure 9 The test structure and Figures 5 to 8The panel 126 shown produces the deposition layer thickness on the corresponding substrate. As shown, the 49 measurement points include point 1 located at the center of the corresponding test substrate, points 2 to 9 offset from the center by a first common radius and uniformly distributed among each other in the corresponding rotation phase, points 10 to 25 offset from the center by a second common radius and uniformly distributed among each other in the corresponding rotation phase, and points 26 to 49 offset from the center by a third common radius and uniformly distributed among each other in the corresponding rotation phase. In one test, the average deposition thickness of the SiN layer of the test structure exceeded the specification requirements because the average deposition thickness of the SiN layer near the center region of the substrate (e.g., points 1 to 9) exceeded the predetermined maximum thickness (i.e., as set in the specification requirements). Furthermore, the average deposition thickness of the SiN layer of the test structure exceeded the specification requirements because the average deposition thickness of the SiN layer near the outer edge region of the substrate (e.g., points 41 to 49) exceeded the predetermined maximum thickness (i.e., as set in the specification requirements). Relative to the test structure, Figures 5 to 8 The average SiN layer deposition thickness of the panel 126 shown meets the specifications because the average SiN layer deposition thickness from the center region of the substrate to the outer edge region (i.e., points 1 to 49) is lower than the predetermined maximum thickness and higher than the predetermined minimum thickness (i.e., as set in the specifications).

[0087] The term "between" as used in this article, when used with a range of values, should be understood to include (unless otherwise specified) the beginning and end values ​​of the range. For example, "between 1 and 5" should be understood to include the numbers 1, 2, 3, 4, and 5, and not just the numbers 2, 3, and 4.

[0088] The foregoing description is merely illustrative in nature and is by no means intended to limit this disclosure, its application, or its use. The broad teachings of this disclosure can be implemented in various forms. Therefore, while this disclosure includes specific examples, its true scope should not be so limited, as other modifications will become apparent upon examination of the drawings, specification, and appended claims. For clarity, the same reference numerals will be used in the drawings to identify similar elements. As used herein, at least one of the terms A, B, and C should be interpreted using the non-exclusive logical "OR" to indicate logical (A or B or C). It should be understood that one or more steps in the method may be performed in different orders (or simultaneously) without altering the principles of this disclosure.

Claims

1. A nozzle for a semiconductor processing apparatus, comprising: A panel, comprising a plurality of panel through-holes extending from a first side of the panel to a second side; A back panel opposite the panel, wherein an air chamber volume is defined between the back panel and the panel, wherein the first side of the panel defines a first inner surface of the air chamber volume; and One or more gas inlets in fluid communication with the volume of the inflation chamber; The plurality of panel through holes include: A first subset of the plurality of panel through-holes, each having a first diameter when measured from the second side of the panel, A second subset of the plurality of panel through-holes, each having a second diameter when measured from the second side of the panel, wherein the second diameter is smaller than the first diameter, and A third subset of the plurality of panel through-holes, each having a third diameter when measured from the second side of the panel, wherein the third diameter is smaller than the second diameter.

2. The nozzle of claim 1, wherein the first diameter is about 0.030 to 0.050 inches.

3. The nozzle of claim 1, wherein the first diameter is about 0.035 to 0.045 inches.

4. The nozzle of claim 1, wherein the first subset of panel through-holes comprises about 3,400 to 4,100 of the plurality of panel through-holes.

5. The nozzle of claim 1, wherein the panel through-holes of the first subset account for approximately 97.50% to 99.50% of the plurality of panel through-holes.

6. The nozzle according to claim 1, wherein the number of panel through holes in the first subset is 80 to 100 times the number of panel through holes in the second subset.

7. The nozzle according to claim 1, wherein the number of panel through holes in the first subset is 950 to 1050 times the number of panel through holes in the third subset.

8. The nozzle of claim 1, wherein the second diameter is between about 0.020 inches and 0.030 inches.

9. The nozzle of claim 1, wherein the second subset has 35 to 55 of the plurality of panel through holes.

10. The nozzle of claim 1, wherein the panel vias of the second subset account for about 0.08% to 2.18% of the plurality of panel vias.

11. The nozzle of claim 1, wherein the number of panel through holes in the second subset is 5 to 15 times the number of panel through holes in the third subset.

12. The nozzle of claim 1, wherein the third diameter is about 0.022 inches to 0.028 inches.

13. The nozzle of claim 1, wherein the panel through-holes of the third subset have 2 to 8 of the plurality of panel through-holes.

14. The nozzle of claim 1, wherein the panel through-holes of the third subset account for about 0.05% to 0.15% of the plurality of panel through-holes.

15. The nozzle of claim 1, wherein the panel has an X-axis and a Y-axis perpendicular to the X-axis, both the X-axis and the Y-axis defining the diameter of the panel, and wherein the X-axis and the Y-axis also define four quadrants of the panel.

16. The nozzle of claim 1, wherein the plurality of panel through holes comprises a plurality of first hexagonal regions, each first hexagonal region being defined by the panel through holes of the first subset, each vertex of the first hexagonal region coinciding with a corresponding panel through hole in the panel through holes of the first subset, and none of the panel through holes of the second subset or the third subset are located within the first hexagonal region.

17. The nozzle of claim 1, wherein the plurality of panel through-holes comprises one or more second hexagonal regions, each second hexagonal region being defined by a panel through-hole in the first subset of panel through-holes, each vertex of the first hexagonal region coinciding with a corresponding panel through-hole in the first subset of panel through-holes, and each of the one or more second hexagonal regions having one or more panel through-holes in the second subset of panel through-holes.

18. The nozzle of claim 17, wherein all the second hexagonal regions are located within a radius AR of the panel, wherein the radius AR is approximately 1.90 to 2.40 inches centered on the center of the panel.

19. The nozzle of claim 17, wherein the two portions of the second hexagonal region are arranged adjacent to each other such that the two portions of the panel through-holes of the first subset are located between the two portions of the panel through-holes of the second subset.

20. The nozzle of claim 17, wherein the second hexagonal region is disposed on the panel such that the second hexagonal region forms a mirror image along the Y-axis of the panel but not along the X-axis perpendicular to the Y-axis.

21. The nozzle of claim 1, wherein the plurality of panel through holes includes one or more third hexagonal regions, each third hexagonal region being defined by a panel through hole in the first subset of panel through holes, each vertex of the first hexagonal region coinciding with a corresponding panel through hole in the first subset of panel through holes, and each of the third hexagonal regions having one or more panel through holes in the third subset of panel through holes.

22. The nozzle of claim 21, wherein all of the third hexagonal regions are located within the radius BR of the panel, wherein the radius BR is approximately 2.15 inches to 2.65 inches with the center of the panel as the center.

23. The nozzle of claim 22, wherein all of the third hexagonal regions are located between the radius CR and the radius BR of the panel, wherein the radius CR is approximately 1.06 to 1.56 inches with the center of the panel as the center.

24. The nozzle of claim 21, wherein at least two of the third hexagonal regions are arranged along the Y-axis of the panel.

25. The nozzle of claim 21, wherein none of the third hexagonal regions are on the X-axis of the panel.

26. The nozzle of claim 1, wherein none of the panel through-holes in the second subset are located outside the radius DR of the panel, with the center of the panel as the center, the radius DR being approximately 1.72 inches to 2.22 inches.

27. The nozzle of claim 1, wherein none of the panel through-holes in the third subset are located outside the radius ER of the panel, with the center of the panel as the center, the radius ER being approximately 2.30 inches to 2.50 inches.

28. The nozzle of claim 1, wherein at least four of the panel through-holes in the third subset form a rhombus pattern, and wherein at least two of the panel through-holes in the first subset are located within the rhombus pattern.

Images