Modular processing chambers for semiconductor manufacturing and related heating configurations, methods, apparatus, and modules

Abstract

This disclosure relates to heaters for semiconductor manufacturing and related chamber assemblies and processing chambers. In one or more embodiments, the chamber body includes an injection portion and an exhaust portion; a plasma source assembly; a substrate support disposed in the processing space; and one or more heat sources configured to heat the processing space. The chamber body and the plasma source assembly at least partially define the processing space. The plasma source assembly includes sidewalls and gas injection inserts disposed within the sidewalls. The sidewalls and the gas injection inserts define an internal space of the plasma source. The gas injection inserts and the sidewalls at least partially define one or more gas injection channels located therebetween. A plasma generator is disposed around the sidewalls.

Description

Technical Field

[0001] This disclosure relates to heaters used in semiconductor manufacturing and related chamber kits and processing chambers. Background Technology

[0002] Semiconductor substrates are processed for various applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a semiconductor or conductive material, on the upper surface of the substrate. For example, epitaxy is a deposition process that deposits films of various materials on the surface of a substrate within a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate.

[0003] However, operations (such as epitaxial deposition) can be time-consuming, expensive, inefficient, and have limited capacity and yield. Furthermore, the hardware may involve relatively large dimensions, requiring a larger footprint in the manufacturing facility. Additionally, processing may involve inhomogeneities, which can lead to hindered device performance and / or reduced yield. For example, gas activation may be limited and / or involve non-uniform activation, which can result in limited and / or non-uniform film growth and / or dopant concentration. For instance, gas activation may be limited at relatively low processing temperatures in device fabrication (e.g., complementary field-effect transistor (CFET) devices). Furthermore, relatively high processing temperatures may involve unintended dopant diffusion and / or hindered device performance.

[0004] Therefore, there is a need for improved equipment and methods in semiconductor processing. Summary of the Invention

[0005] This disclosure relates to heaters used in semiconductor manufacturing and related chamber kits and processing chambers.

[0006] In one or more embodiments, a chamber body is disclosed. The chamber body includes an injection portion and an exhaust portion; a plasma source assembly; a substrate support disposed in a processing space; and one or more heat sources configured to heat the processing space. The chamber body and the plasma source assembly at least partially define the processing space. The plasma source assembly includes a sidewall and a gas injection insert disposed within the sidewall. The sidewall and the gas injection insert define an internal space of the plasma source. The gas injection insert and the sidewall at least partially define one or more gas injection channels located therebetween. A plasma generator is disposed around the sidewall.

[0007] In one or more embodiments, a processing chamber suitable for semiconductor manufacturing is provided. The processing chamber includes: a chamber body including an injection portion and an exhaust portion; one or more heat sources; a cover including an opening; a first conductive plate; a second conductive plate; and a substrate support disposed within a processing space. One or more heat sources are disposed between the cover and the substrate support. The first conductive plate at least partially defines the processing space. The first conductive plate and the second conductive plate at least partially define a remote processing space.

[0008] In one or more embodiments, a method for processing a substrate is disclosed. The method includes heating the substrate from a first side. The substrate is positioned within a processing space of a processing chamber. Plasma is supplied from a second side of the substrate within the processing space of the processing chamber. One or more process gases are flowed over the substrate. One or more layers are deposited on the substrate. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above, a more specific description of the present disclosure can be provided with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be construed as limiting the scope of the invention, and other equally effective embodiments are permissible.

[0010] Figure 1 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0011] Figure 2 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0012] Figure 3 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0013] Figure 4 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0014] Figure 5 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0015] Figure 6 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0016] Figure 7 This is a schematic block diagram of a method for substrate processing in semiconductor manufacturing according to one or more embodiments.

[0017] To facilitate understanding, the same reference numerals are used where possible to denote common elements in the figures. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0018] This disclosure relates to heaters used in semiconductor manufacturing and related chamber kits and processing chambers.

[0019] The terms "couples," "coupling," "coupled," and "coupled" in this disclosure may include, but are not limited to, joining, embedding, welding, fusion, interference fitting, and / or fastening (e.g., by using bolts, threaded connections, pins, and / or screws). The terms "couples," "coupling," "coupled," and "coupled" in this disclosure may include, but are not limited to, integral molding. The terms "couples," "coupling," "coupled," and "coupled" in this disclosure may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as links, blocks, and / or frames.

[0020] Figure 1 This is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is a deposition chamber, such as an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102, and to supply plasma for plasma operations (e.g., plasma-assisted film deposition, ion supply to the substrate 102, pre-cleaning of the substrate 102, etching of the substrate 102, and / or cleaning of the processing chamber 100). In one or more embodiments, the processing chamber 100 generates a precursor crossflow across the top surface 150 of the substrate 102. Figure 1 The processing chamber 100 shown in the middle diagram is in the processing state.

[0021] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Inside the chamber body are disposed a substrate support 106, a lower window 110 (e.g., a lower dome), and a plurality of heat sources 143. The window 110 is formed of an energy-transmitting material, such as transparent quartz. In one or more embodiments, the heat source 143 includes a lower lamp operable to heat the processing space 136 from one side of the substrate 102 (e.g., from below the substrate 102). In one or more embodiments, the heat source 143 includes a lamp (e.g., a halogen lamp or a UV lamp). This disclosure contemplates the use of other heat sources (in addition to or replacing lamps) as various heat sources described herein. For example, resistive heaters, light-emitting diodes (LEDs), lasers (e.g., laser diodes), and / or any other suitable heat sources may be used individually or in combination for the various heat sources described herein.

[0022] A substrate support 106 is disposed in the processing space 136 and located between the upper body 156 and the window 110. The substrate support 106 is positioned above one or more heat sources 143 and supports the substrate 102. In one or more embodiments, the substrate support 106 includes a base. Other substrate supports are contemplated in this disclosure (including, for example, substrate carriers and / or one or more annular segments supporting one or more outer regions of the substrate 102). Multiple heat sources 143 are disposed between the window 110 and the base plate 152. The multiple heat sources 143 form part of a heat source module 145. The lower window 110 is a lower dome and / or formed of an energy-transmitting material (e.g., quartz).

[0023] Processing space 136 and purification space 138 are formed between upper body 156 and lower window 110. Processing space 136 and purification space 138 are portions of an interior space at least partially defined by upper body 156, lower window 110 and one or more pads 111, 163. The one or more pads 111, 163 are located inside the chamber body.

[0024] The internal space has a substrate support 106 disposed therein. The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is coupled to the shaft 118 via one or more arms 119. The shaft 118 is coupled to a movement assembly 121. The movement assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing space 136.

[0025] The substrate support 106 may include lifting rod holes 107 disposed therein. Each lifting rod hole 107 is sized to accommodate a lifting rod 132 for lifting the substrate 102 from the substrate support 106 before or after performing a deposition process. When the substrate support 106 is lowered from a processing position to a transport position, the lifting rod 132 may abut against a lifting rod stop 134. The lifting rod stop 134 may include a plurality of arms 139 attached to a rod shaft 118.

[0026] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more gas exhaust outlets 116. The one or more gas inlets 114 are part of the injection portion 113 of the chamber body, and the one or more gas exhaust outlets 116 are part of the exhaust portion 115 of the chamber body. The one or more gas inlets and the one or more purge gas inlets 164 are located on the side of the flow module 112 opposite to the one or more gas exhaust outlets 116. A preheating ring 117 is located below the one or more gas inlets 114 and the one or more gas exhaust outlets 116. The preheating ring 117 may comprise a complete annulus or one or more annular segments. The preheating ring 117 is located above the one or more purge gas inlets 164. One or more gaskets 111, 163 are located on the inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition and / or cleaning operations. One or more gas inlets 114 and one or more purge gas inlets 164 are each positioned to allow one or more process gases P1 and one or more purge gases P2 to flow parallel to the top surface 150 of the substrate 102 disposed within the processing space 136. One or more gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more purge gas sources 153. One or more purge gas inlets 164 are fluidly connected to one or more purge gas sources 162. One or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases P1 supplied using one or more process gas sources 151 may contain one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purified gases P2 supplied using one or more purified gas sources 162 may contain one or more inert gases (e.g., argon (Ar), helium (He), and / or nitrogen (N2)). One or more clean gases supplied using one or more clean gas sources 153 may contain one or more hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases P1 contain silicon phosphide (SiP) and / or phosphine (PH3), and one or more clean gases contain hydrochloric acid (HCl).

[0027] One or more gas exhaust outlets 116 are further connected to or include an exhaust system 109. The exhaust system 109 is fluidly connected to one or more gas exhaust outlets 116 and an exhaust pump 157. The exhaust system 109 may assist in controlling the deposition of layers on the substrate 102. The exhaust system 109 is disposed on the side of the processing chamber 100 opposite to the flow module 112.

[0028] Processing chamber 100 includes one or more gaskets 111, 163 (e.g., lower gasket 111 and upper gasket 163). Flow module 112 (which may be at least a portion of the sidewall of processing chamber 100) includes one or more gas inlets 114 in fluid communication with processing space 136. One or more gas inlets 114 are in fluid communication with one or more flow gaps between upper gasket 163 and lower gasket 111.

[0029] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases P1 flow through one or more gas inlets 114, through one or more gaps, and into the processing space 136 to flow over the substrate 102.

[0030] This disclosure also considers that during deposition operations, one or more purge gases P2 may be supplied to the purge chamber 138 (through one or more purge gas inlets 164) and discharged from the purge chamber 138. One or more purge gases P2 flow simultaneously with one or more process gases P1. One or more process gases P1 are discharged through the gap between the upper liner 163 and the lower liner 111 and through one or more gas exhaust outlets 116. One or more purge gases P2 may be discharged through one or more outlet openings, just as one or more process gases P1 are discharged through one or more gas exhaust outlets 116. This disclosure also considers that one or more purge gases P2 may be individually discharged through one or more second gas exhaust outlets separate from the one or more gas exhaust outlets 116.

[0031] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the lower liner 111) and into the processing space 136.

[0032] The upper body 156 includes a plasma source assembly 120. Plasma can be generated in the plasma source assembly 120 (e.g., in the plasma generation region) by a plasma generator (e.g., induction coil 130), and a desired particle flow flows from the plasma source assembly 120 to the substrate 102 through an opening 188 provided in a conductive plate 187, which separates the plasma source assembly 120 from the processing space 136. This disclosure contemplates the possibility of omitting the conductive plate 187.

[0033] Plasma source assembly 120 includes a dielectric sidewall 122. Plasma source assembly 120 includes a top cover 124. The dielectric sidewall 122 and top cover 124 (including insert 140) define a plasma source interior 125. The dielectric sidewall 122 may contain any suitable dielectric material, such as quartz. An induction coil 130 is disposed around the plasma source assembly 120 adjacent (e.g., adjacent) to the dielectric sidewall 122. The induction coil 130 is coupled to an RF power generator 133 via a matching network 135. One or more feed gases P3 are introduced into the plasma source interior from a plasma gas supply source 155. When the induction coil 130 is powered by RF power from the RF power generator 133, plasma is generated in the plasma source assembly 120. In one or more embodiments, plasma source assembly 120 is used to generate plasma inductively coupled plasma (ICP). In one or more embodiments, the RF power supplied to coil 130 is from about 1 kW to about 15 kW, for example from about 3 kW to about 10 kW. Induction coil 130 can ignite and sustain plasma over a wide range of pressures and flow rates. In one or more embodiments, processing chamber 100 includes a grounded Faraday shield 128 to reduce capacitive coupling between induction coil 130 and plasma.

[0034] To increase efficiency, the processing chamber 100 includes a gas injection insert 140 disposed within the plasma source interior 125. The gas injection insert includes one or more cooling channels 141 configured to cool the gas injection insert 140 during processing of the substrate 102. One or more gas injection channels 154 supply process gas to the plasma source interior 125 through an active region 172, wherein a reaction occurs between the hot electrons and the feed gas due to enhanced confinement of the hot electrons. For example, the reaction may occur in one or more gas injection channels 154 and / or the active region 172 described below between the insert 140 and the dielectric sidewall 122. One or more gas injection channels 154 extend circumferentially between the dielectric sidewall 122 and the insert 140. The one or more feed gases used to generate the plasma may include, but are not limited to, one or more of the following: hydrogen (H2), xenon (Xe2), fluorine (F2), krypton fluoride (KrF), neon (Ne), and / or any mixture thereof (e.g., xenon and neon). In one or more embodiments, one or more feed gases comprise one or more silicon-containing gases (e.g., silane, dichlorosilane (DCS), trichlorosilane (TCS), disilane (DS), and / or tetrachlorosilane) mixed with a carrier gas (e.g., argon, hydrogen, and / or helium). In one or more embodiments, one or more feed gases comprise one or more dopant gases, such as germanane, diborane, and / or phosphorus. The use of other gases as one or more feed gases is contemplated. The enhanced electron confinement region or active region 172 is defined radially by the sidewalls of the gas injection insert 140 and the dielectric sidewalls 122, and vertically from the bottom by the edge of the bottom surface 180 of the insert 140. The active region 172 provides an electron confinement region within the plasma source interior 125 for efficient plasma generation and maintenance. The width of one or more gas injection channels 154 may be about 1 mm or greater, for example, about 10 mm or greater, for example, from about 1 mm to about 10 mm. The gas injection insert 140 guides the process gas through the active region 172 where plasma is formed.

[0035] The ability of the gas injection insert 140 to improve the efficiency of the processing chamber 100 is independent of the material of the gas injection insert 140, provided that the wall in direct contact with free radicals is made of a material with a low recombination rate for free radicals. For example, in one or more embodiments, the gas injection insert 140 may be made of a metal (e.g., aluminum) having a coating configured to reduce surface recombination. In one or more embodiments, the gas injection insert 140 may be made of a dielectric material (e.g., quartz) or an insulating material.

[0036] Coil 130 is aligned with active region 172 and / or one or more gas channels 154 such that the top turn of coil 130 is above the bottom surface 180 of insert 140 and operates substantially within the active region 172 and / or one or more gas channels 154 of the internal space, while the bottom turn of coil is below the bottom surface 180. The center of coil 130 is substantially aligned with the bottom surface 180. The position of coil 130 can be adjusted for desired performance. The alignment of coil 130 with bottom surface 180 provides improved source efficiency, i.e., controlling the generation of chemicals required for the plasma process and delivering them to substrate 102 with reduced or eliminated losses. For example, plasma maintenance conditions (the balance between local ion generation and loss) can be enhanced depending on the material generated by the plasma process. Regarding the delivery of material to substrate 102, efficiency can depend on the space and wall recombination of the material. Therefore, controlling the alignment of coil 130 with bottom surface 180 provides control over the source efficiency of the plasma process.

[0037] In one or more embodiments, coil 130 has a short transition region near the lead, and the remaining coil turns are parallel to the bottom surface 180. In one or more embodiments, coil 130 is helical. In one or more embodiments, coil 130 has 2 to 5 turns.

[0038] In one or more embodiments, a plasma source assembly 120 is formed by aligning a bottom surface 180 with a portion of an induction coil 130 (e.g., a coil loop) using a suitably sized insert 140 (and a top cover 124, which may be a pre-formed portion of the insert 140). The bottom surface 180 is movable relative to the plasma source assembly 120 in a vertical direction V1, while the remaining portion of the insert 140, which is part of the plasma source assembly 120, is static (e.g., fixed) to provide alignment of the bottom surface 180 with a portion of the coil 130. For example, a mechanism may be coupled to a portion of the insert 140 to adjust the position of the bottom surface 180 such that a portion of the insert 140 having a first length (L1) is adjusted relative to a second length (L2). For example, this mechanism may be an actuator, such as a motor, electric motor, stepper motor, or pneumatic actuator. Other mechanisms are considered. In one or more embodiments, the length difference (Δ) from L1 to L2 is about 0.1 cm to about 4 cm, for example about 1 cm to about 2 cm.

[0039] Insert 140 can be coupled to a mechanism configured to move the entire insert 140 vertically (e.g., in a vertical direction V1 relative to plasma source assembly 120) so that bottom surface 180 is aligned with a portion of coil 130. Spacers (not shown) can be used to fill one or more gaps between insert 140 and another portion of plasma source assembly 120 (e.g., between top cover 124 and dielectric sidewall 122), which are formed by vertical movement of the insert. For example, spacers can be formed of a ceramic material (e.g., quartz).

[0040] Generally, positioning the center of coil 130 above the bottom surface 180 increases the efficiency of ionization and dissociation, but reduces the efficiency of material transport to the substrate, because much of the material may recombine on the walls of narrow active areas. Positioning coil 130 below the bottom surface 180 increases plasma transport efficiency, but may reduce plasma generation efficiency.

[0041] The conductive plate 187 is configured to separate the processing space 136 from the plasma charged particles (ions and electrons) recombined on the conductive plate 187, allowing neutral plasma material to pass through the conductive plate 187 into the processing space 136 while blocking other material. The conductive plate 187 is formed of a conductive material. In one or more embodiments, the conductive material comprises silicon carbide (SiC), molybdenum, tungsten, stainless steel, and / or aluminum (e.g., anodized aluminum). In one or more embodiments, the conductive plate 187 has a plurality of openings 188. The openings 188 are disposed through the conductive plate 187 (e.g., the openings 188 traverse the thickness of the conductive plate 187). The openings 188 in the bottom portion of the conductive plate 187 may have different patterns. The openings 188 may have an average diameter of about 4 mm to about 6 mm. In one or more embodiments, the conductive plate 187 has a thickness of about 5 mm to about 10 mm, which defines the length (L1) of the openings 188. The ratio of the thickness (length (L1)) of the conductive plate 187 to the average diameter of the plurality of openings 188 can be greater than about 1, for example, from about 1 to about 3. The conductive plate 187 can be used as an ion filter (e.g., an ion blocking plate) such that when plasma flows through the conductive plate 187, free radicals flow through the flow openings 188 and through the conductive plate 187, while ions are at least partially blocked by the conductive plate 187 and conduct through the conductive plate and grounded through the grounding electrode 189. On the side aligned with the exhaust portion 115 of the processing chamber 100, the grounding electrode 189 extends into the conductive plate 187.

[0042] Plasma PS1 may be supplied in the processing space 136 during the flow of one or more process gases P1 (and / or cleaning gases) to promote bond breaking, for example, for deposition on substrate 102. Plasma PS1 may be supplied in the processing space 136 before the flow of one or more process gases P1 (e.g., to pre-clean substrate 102), or after the flow of one or more process gases P1 (e.g., to etch substrate 102, supply ions to substrate 102, and / or clean processing chamber 100). This disclosure also contemplates that plasma PS1 may be supplied through one or more gas inlets 114.

[0043] As shown, controller 190 communicates with processing chamber 100 and controls the operation of processes and methods, such as those described herein. Controller 190 is configured to receive data or input from one or more sensors as sensor reads. The sensor devices may include, for example, sensor devices monitoring the growth of one or more layers on substrate 102; and / or sensor devices monitoring the temperature of substrate 102, one or more heaters, substrate support 106, and / or pads 111, 163. As an example, one or more sensor devices may measure temperature, and the power to one or more heaters may be controlled based on the measured temperature (e.g., using feedback control). As described, one or more sensor devices may include, for example, a pyrometer. In one or more embodiments, one or more thermocouples (e.g., proximity thermocouples) are provided to measure temperature, and the power to one or more heaters may be controlled based on the measured temperature (e.g., using feedback control). As an example, one or more of the sensor devices may measure one or more gas parameters and / or one or more plasma parameters (e.g., ion density, electron temperature, electron density, energy distribution, enthalpy, and / or absorptivity). In one or more embodiments, one or more of the sensor devices include a residual gas analyzer, an optical emission spectrometer, an enthalpy probe, a Langmuir probe, a Faraday cup, and / or an absorption spectrometer.

[0044] Controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), instruction-containing memory 191, and support circuitry 192 for the CPU 193. Controller 190 directly controls various items or controls various items via other computers and / or controllers. In one or more embodiments, controller 190 is communicatively coupled to a dedicated controller, which functions as a central controller.

[0045] Controller 190 is any form of general-purpose computer processor used to control various substrate processing chambers and devices, and subprocessors thereon or therein, in an industrial environment. Memory 191 or non-transitory computer-readable media is one or more of readily available memory, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, USB flash drive, or any other form of local or remote digital storage. Support circuitry 192 of controller 190 is coupled to CPU 193 to support CPU 193. Support circuitry 192 includes cache, power supply, frequency circuitry, input / output circuitry systems, and subsystems. Operating parameters (e.g., power applied to coil 130, power applied to heat source 143, cleaning formula and / or treatment formula) and operations are stored as software routines in memory 191. These software routines are executed or invoked to transform controller 190 into a purpose-specific controller to control the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein. When instructions stored in memory are executed, one or more of the operations described herein (e.g., the operation of method 700) are performed in relation to processing chamber 100. Controller 190 and processing chamber 100 are at least part of a system for processing a substrate.

[0046] The various operations described herein can be performed automatically using the controller 190, or can be performed automatically or manually by the user.

[0047] The controller 190 is configured to control the power to one or more heaters, the power to the coil 130, deposition, cleaning, rotational position, heating, and airflow through the processing chamber 100 by providing outputs to the sensor device, one or more heaters, RF power generator 133, heat source 143, process gas source 151, purification gas source 162, plasma gas supply source 155, moving assembly 121, and / or exhaust pump 157.

[0048] During processing, in one or more embodiments, the substrate 102 is heated. One or more heat sources 143 include a plurality of heat sources 143a-143c arranged in a plurality of levels 181-183. The plurality of levels 181-183 include one or more first heat sources 143a of a first level 181 and one or more second heat sources 143b of a second level 182 oriented at an angle A1 (e.g., a tilt angle) relative to the first level 181. The plurality of levels 183 include one or more third heat sources 143c of a third level 183. The processing chamber 100 includes a first reflector 184 disposed inside one or more first heat sources 143a of the first level 181, a second reflector 185 disposed inside one or more second heat sources 143b of the second level 182, and a third reflector 186 disposed inside one or more third heat sources 143c of the third level 183. Multiple heat sources 143a-143c are arranged in multiple zones 186-188 ( Figure 1 (Three regions are shown in the figure). In one or more embodiments, one or more first heat sources 143a of the first level 181 are oriented perpendicular to the longitudinal axis of the substrate support 106, and one or more second heat sources 143b of the second level 182 and one or more third heat sources 143c of the third level 183 are oriented at an angle relative to the longitudinal axis.

[0049] Figure 2 This is a schematic side cross-sectional view of a processing chamber 200 according to one or more embodiments. The processing chamber 200 is similar to... Figure 1 The processing chamber 100 shown in the figure includes one or more aspects, features, components, operations and / or properties thereof.

[0050] Processing chamber 200 is omitted Figure 1 The heat source module 145 is shown. In one or more embodiments, the processing chamber 200 does not include a heat source module disposed below the substrate 102. The substrate support 106 includes a heater 243 disposed within the substrate support 106. The heater 243 may be a resistance heater. This disclosure contemplates the use of a heat source module in addition to a resistance heater. The heater 243 is configured to heat the substrate 102 disposed on the substrate support 106.

[0051] The substrate support 106 is positioned at a first distance D1 from the induction coil 130. The first distance D1 ranges from approximately 5 cm to approximately 15 cm. The resistance heater 243 makes the processing chamber 200 more compact. The temperature of the substrate 102 can be controlled at different pressures and temperature ranges by moving the substrate 102 away from the substrate support 106. The resistance heater 243 may comprise a multi-zone resistance heater with model-based control. An embedded thermocouple can be used to control the temperature zones of the multi-zone resistance heater. The embedded thermocouple monitors the temperature across the temperature zones to allow for temperature adjustment within the zones during processing.

[0052] Figure 3 This is a schematic side cross-sectional view of a processing chamber 300 according to one or more embodiments.

[0053] Processing chamber 300 is similar to Figure 1 The processing chamber 100 shown in the figure includes one or more aspects, features, components, operations and / or properties thereof.

[0054] The processing chamber 300 includes a heat source module 345 disposed below the substrate support 106. The heat source module 345 includes one or more heat sources 343. The one or more heat sources 343 include multiple heat sources 343a-343b arranged in multiple levels 381, 382. The multiple levels 381, 382 include one or more first heat sources 343a of the first level 381 and one or more second heat sources 343b of the second level 382 oriented parallel to the first level 381. The heat source module 345 of the processing chamber 300 includes a first reflector 384 disposed inside the one or more first heat sources 343a of the first level 381, and a second reflector 385 disposed inside the one or more second heat sources 343b of the second level 382. The multiple heat sources 343a, 343b are arranged in multiple regions 387, 388. Figure 3 (Two regions are shown in the figure). In one or more embodiments, one or more first heat sources 343a of the first level 381 and one or more second heat sources 343b of the second level 382 are oriented perpendicular to the longitudinal axis of the substrate support 106.

[0055] Figure 4 This is a schematic side cross-sectional view of a processing chamber 400 according to one or more embodiments.

[0056] Processing chamber 400 is similar to Figure 1 The processing chamber 100 shown in the figure includes one or more aspects, features, components, operations and / or properties thereof.

[0057] The processing chamber 400 includes a heat source module 445 disposed below the substrate support 106. The heat source module 445 includes one or more heat sources 443. The one or more heat sources 443 include heat sources arranged in multiple regions 487-492. Figure 4 Multiple heat sources 443a-443f are shown in six regions. The heat source module 345 of the processing chamber 400 includes a reflector housing 420, and the heat sources 443a-443f are respectively disposed in the openings 421 of the reflector housing 420. The reflector housing 420 may be formed of a reflective material (e.g., gold or polished aluminum) and / or may be coated with a reflective material. For example, the upper surface 422 and / or the inner surface 423 adjacent to the openings 421 may be coated with a reflective material. Multiple cooling channels 426 are formed in the reflector housing 420 and between the various openings 421. The cooling channels 426 may receive cooling fluid, such as air or water. In one or more embodiments, the multiple heat sources 443a-443f are oriented parallel to the longitudinal axis of the substrate support 106. The reflective materials and / or reflectors described herein may have a reflectivity greater than about 90%, for example greater than about 98%, for wavelengths of about 150 nm or larger (e.g., 150 nm to about 15000 nm, about 700 nm to about 15000 nm, about 700 nm to 1000 nm, or about 1000 nm to about 15000 nm). In one or more embodiments, the reflective materials and / or reflectors described herein may have a reflectivity greater than about 90%, for example greater than about 98%, for wavelengths in the infrared and / or ultraviolet range.

[0058] Figure 5 This is a schematic side cross-sectional view of a processing chamber 500 according to one or more embodiments.

[0059] Processing chamber 500 is similar to Figure 1 The processing chamber 100 shown in the figure and / or Figure 4 The processing chamber 400 shown in the figure includes one or more aspects, features, components, operations and / or properties thereof.

[0060] The processing chamber 500 includes a chamber body that at least partially defines a processing space 136 for processing the substrate 102. The chamber body may be made of stainless steel and may be lined with quartz. The processing space 136 is configured to be radiantly heated by a heat source module 516 disposed below a quartz window 518. In one or more embodiments, the quartz window 518 is fluid-cooled.

[0061] Heat source module 516 contains one or more heat sources. These heat sources are distributed in multiple areas 587-593. Figure 5Multiple heat sources 537a-537g are shown in seven regions. The heat source module 516 of the processing chamber 500 includes a reflector housing 543, with heat sources 537a-537g respectively disposed in openings 541 of the reflector housing 543. The openings 541 are oriented parallel to the longitudinal axis of the substrate support 106 (e.g., vertically). The reflector housing 543 may be formed of and / or coated with a reflective material. For example, the upper surface 544 and / or the inner surface 542 adjacent to the openings 541 may be coated with a reflective material. A portion of the reflector housing 543 is located between the openings 541. One or more cooling channels may be formed in the reflector housing 543. In one or more embodiments, the multiple heat sources 537a-537g are oriented parallel to the longitudinal axis of the substrate support 106.

[0062] A heat source connected to controller 190 can adjust its heating effect. In one or more embodiments, the heat sources are grouped into regions 587-593, and controller 190 can be used to independently power regions 587-593. Regions 587-593 can be independently controlled to provide a target temperature distribution across substrate 102. Regions 587-593 can be pulsed independently. Regions 587-593 can be connected to individual controllable power supplies. In one or more embodiments, the amplitude, phase, and / or frequency of the power supplied to the respective regions 587-593 can be independently controlled to adjust the radiant energy of the corresponding region of guide substrate 102.

[0063] Figure 6 This is a schematic side cross-sectional view of a processing chamber 600 according to one or more embodiments.

[0064] Processing chamber 600 is similar to Figure 1 The processing chamber 100 shown in the figure includes one or more aspects, features, components, operations and / or properties thereof.

[0065] Processing chamber 600 includes a chamber body that at least partially defines a processing space 136 for processing substrate 102. Upper body 156 includes a cover 654, a first conductive plate 187, a second conductive plate 687, a heat source 643, an opening 674, and a conduit 675. The first conductive plate 187 and substrate support 106 define the processing space 136. The first conductive plate 187 and second conductive plate 687 define a remote processing space 636. The first conductive plate 187 includes a first opening 188. The second conductive plate 687 includes one or more second openings 688.

[0066] Feed gas P3 can be supplied from plasma gas supply source 155 to remote processing space 636 and processing space 136. Feed gas P3 can generate plasma within remote processing space 636 or processing space 136. In one or more embodiments, the plasma is generated as capacitively coupled plasma (CCP). Processing chamber 600 is configured to generate plasma in remote processing space 636 or processing space 136. During plasma generation in remote processing space 636, RF power is supplied to first conductive plate 187 to heat first conductive plate 687 to generate plasma from processing gas P2. In one or more embodiments, no bias is provided to second conductive plate 687 and substrate 102 disposed on substrate support 106. The bias provided to first conductive plate 187 prevents ions and electrons from being supplied to substrate 102, for example, by supplying neutral free radicals to substrate 102.

[0067] During plasma generation in processing space 136, RF power is supplied to the first conductive plate 187 and the second conductive plate 687 to heat them, thereby generating plasma from the processing gas P2. In one or more embodiments, no bias is provided to the substrate 102 disposed on the substrate support 106. The bias provided to the first conductive plate 187 and the second conductive plate 687 enables the supply of neutral radicals, ions, and electrons to the substrate 102. The substrate 102 is grounded. For example, the substrate 102 can be grounded via a wire 668 connected to the substrate support 106 and extending through the rod shaft 118.

[0068] Processing chamber 600 may include or omit one or more gas inlets 114, and process gas P1 may flow through the same path as feed gas P3. Before, during and / or after the flow of feed gas P3, process gas P1 is supplied to the substrate 102 via remote processing space 636 and processing space 136.

[0069] The lower body 148 further includes a pumping ring 665. The pumping ring 665 directs gas symmetrically toward the exhaust outlet 116. The pumping ring 665 balances the conduction between the exhaust outlet 116 and all areas surrounding the substrate 102, ensuring that the substrate 102 does not experience airflow asymmetry even if the exhaust outlet 116 is located on one side of the chamber. The pumping ring 665 mitigates the asymmetry in the overall architecture of the processing chamber 600 in terms of the flow path from the conduit 675 to the exhaust outlet 116. The pumping ring 665 is used to exhaust gases (e.g., process gas P1, purge gas P2, and / or plasma).

[0070] Figure 7This is a schematic block diagram of a method 700 for substrate processing in semiconductor manufacturing according to one or more embodiments.

[0071] Operation 702 of method 700 includes heating a substrate 102 positioned on a substrate support 106 in processing chambers 100, 200, 300, 400, 500, and 600. The substrate 102 is heated from one side. Heating includes heating the substrate 102 to a target temperature. In one or more embodiments, the target temperature of the substrate 102 is below 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or lower, for example, below 200 degrees Celsius (for example, about 150 degrees Celsius). In one or more embodiments, the target temperature of the substrate 102 is 400 degrees Celsius or higher or 600 degrees Celsius or lower. In one or more embodiments, the target temperature of the substrate 102 is in the range of 380 degrees Celsius to 600 degrees Celsius, for example, 400 degrees Celsius to 500 degrees Celsius.

[0072] Operation 704 includes supplying plasma within processing space 136 of processing chambers 100, 200, 300, 400, 500, and 600. The plasma may be generated within the processing space and / or may be generated outside the processing space and then flow into the processing space.

[0073] Operation 705 includes maintaining the processing space at a certain pressure. In one or more embodiments, the pressure is maintained at less than 60 Torr, for example, in the range of 0 Torr to 30 Torr. In one or more embodiments, the pressure is maintained at less than 1 Torr, for example, in the range of 0 Torr to 5 millitors.

[0074] Operation 706 includes flowing one or more process gases over substrate 102. In one or more embodiments, the plasma of operation 704 is supplied during the flow of one or more process gases in operation 706, the plasma flowing over substrate 102. In one or more embodiments, the plasma of operation 704 is supplied before or after the flow of one or more process gases in operation 706.

[0075] Operation 708 involves depositing one or more layers on substrate 102. In one or more embodiments, the plasma for operation 704 is supplied during the deposition of operation 708. In one or more embodiments, the plasma for operation 704 is supplied before or after the deposition of operation 708.

[0076] The benefits of this disclosure include: reliable gas activation (e.g., at relatively low processing temperatures); adjustable gas activation; modularity of plasma operation and epitaxial deposition operation within a single chamber; modularity of chamber applications; more uniform gas activation; temperature uniformity (e.g., temperature uniformity in the outer regions of the substrate); reduced gas consumption and waste; increased growth rate; and more uniform film growth and / or dopant concentration. As an example, in addition to or instead of electromagnetic radiation (e.g., infrared and / or ultraviolet radiation), ions and / or free radicals can be used to activate the gas for processing.

[0077] Benefits also include enhanced device performance; reduced or eliminated unwanted dopant diffusion; efficient processing; and increased yield. For example, for substrate target temperatures below 500 degrees Celsius, such as target temperatures in the range of 380 to 500 degrees Celsius, gas activation is facilitated. For instance, when the substrate temperature is approximately 400 degrees Celsius, the gas can be activated for processing operations.

[0078] It is possible to combine one or more aspects disclosed herein. For example, one or more aspects, features, components, operations, and / or properties of processing chamber 100, processing chamber 200, processing chamber 300, processing chamber 400, processing chamber 500, processing chamber 600, and / or method 700 may be combined. Furthermore, it is possible to consider that one or more aspects disclosed herein may include some or all of the benefits described above.

[0079] Although the foregoing describes an implementation of this disclosure, other and further implementations of this disclosure may be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the following claims.

Claims

1. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: The chamber body includes an injection section and an exhaust section; A plasma source assembly, wherein the chamber body and the plasma source assembly at least partially define a processing space, the plasma source assembly comprising: Sidewall; A gas injection insert disposed within the sidewall, the sidewall and the gas injection insert defining an internal space of a plasma source, the gas injection insert and the sidewall at least partially defining one or more gas injection channels located between the gas injection insert and the sidewall; and A plasma generator, the plasma generator being disposed around the sidewall; A substrate support member disposed in the processing space; and One or more heat sources are configured to heat the processing space.

2. The processing chamber of claim 1, wherein the one or more heat sources comprise a plurality of heat sources arranged in a plurality of horizontal planes and disposed below the substrate support.

3. The processing chamber of claim 2, wherein the plurality of levels comprises: One or more primary heat sources at the first level; and One or more second heat sources at a second level, the one or more second heat sources being oriented at an angle relative to the first level.

4. The processing chamber of claim 3, wherein the processing chamber further comprises: A first reflector is disposed inside one or more first heat sources at the first level; and A second reflector is disposed inside one or more second heat sources in the second level.

5. The processing chamber of claim 1, wherein the one or more gas injection channels extend circumferentially between the sidewall and the gas injection insert.

6. The processing chamber of claim 1, wherein the one or more heat sources comprise resistance heaters disposed in the substrate support.

7. The processing chamber of claim 1, further comprising a conductive plate disposed between the substrate support and the gas injection insert, wherein the conductive plate includes a plurality of flow openings.

8. The processing chamber of claim 7, further comprising an electrode extending into the conductive plate on a side aligned with the exhaust portion of the processing chamber.

9. The processing chamber of claim 1, wherein the plasma generator comprises an induction coil.

10. The processing chamber of claim 1, wherein the one or more heat sources comprise a plurality of heat sources arranged in a plurality of regions.

11. The processing chamber of claim 10, wherein the plurality of heat sources are oriented parallel to the longitudinal axis of the substrate support.

12. The processing chamber of claim 10, wherein the plurality of heat sources are oriented at an angle relative to the longitudinal axis of the substrate support.

13. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: The chamber body includes an injection section and an exhaust section; One or more heat sources; A lid, the lid including an opening; A first conductive plate, wherein the first conductive plate at least partially defines a processing space; A second conductive plate, wherein the first conductive plate and the second conductive plate at least partially define a remote processing space; as well as A substrate support is disposed in the processing space, and one or more heat sources are disposed between the cover and the substrate support.

14. The processing chamber of claim 13, wherein the processing chamber is configured to generate plasma in the remote processing space.

15. The processing chamber of claim 13, wherein the processing chamber is configured to generate plasma in the processing space.

16. The processing chamber of claim 13, wherein the processing chamber includes a pumping ring disposed below the substrate support.

17. The processing chamber of claim 13, further comprising a pumping ring, wherein the pumping ring is radially symmetrical about the substrate support.

18. A method for processing a substrate, the method comprising: The substrate is heated from a first side of the substrate, which is positioned in the processing space of the processing chamber; Plasma is supplied from the second side of the substrate in the processing space of the processing chamber; One or more process gases flow over the substrate; and One or more layers are deposited on the substrate.

19. The method of claim 18, wherein the plasma is supplied during the flow of the one or more process gases, and the plasma flows over the substrate.

20. The method of claim 18, wherein the plasma is supplied before or after the flow of the one or more process gases.

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