Probe device and method of manufacturing thereof

Abstract

To provide a probe device that enables reliable measurement and inspection at low cost in response to miniaturization and narrow pitch, the device comprises a probe device substrate, a first elastic material layer, a first wiring pattern, a second elastic material layer, a second wiring pattern, and a through hole that passes through the second elastic material layer and connects the corresponding first wiring pattern and second wiring pattern. The probe is formed above the second wiring pattern in a direction that protrudes at a right angle to the upper surface of the second elastic material layer.

Description

Technical Field

[0001] The present invention relates to a probe device and a method thereof for manufacturing the same, which are capable of electrical measurement and inspection of a substrate by contacting an electrode formed on the surface of the substrate being inspected. Background Technology

[0002] Flip-chip packaging (semiconductor packaging) utilizing flip-chip technology is being developed. A flip-chip package includes a semiconductor chip and a packaging substrate for mounting the semiconductor chip. Multiple electrode pads are formed on the surface of the packaging substrate. Solder bumps are formed on each electrode pad. The solder bumps are connection points that connect to the semiconductor chip, and are formed, for example, on top of the metal layer of the electrode pad using electroplating techniques.

[0003] In measuring and inspecting the electrical characteristics of such packaged substrates, a probe device equipped with multiple probes is used. In this probe device, it is required that multiple probes simultaneously contact the solder bumps even if there are deviations in the height of the solder bumps. Conventional probe devices include those with a two-dimensional arrangement of a mechanical structure exerted by spring coils, allowing the probe tips to extend and retract (retract) (see, for example, Patent Document 1). In this conventional probe device, the electrical characteristics of the substrate being measured are measured using a four-terminal inspection method. Other probes include those with a two-dimensional arrangement of multiple cantilever structures manufactured using MEMS (Micro Electro Mechanical Systems) technology.

[0004] Prior art literature

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2005-315775 Summary of the Invention

[0007] Summary of the invention

[0008] The problem that the invention aims to solve

[0009] In recent years, semiconductor chips have become increasingly integrated due to advancements in manufacturing processes. Along with this, the number of electrode pads with solder bumps formed on the surface of the packaging substrate used to mount these semiconductor chips has increased, and the miniaturization and narrowing of these electrode pads have also progressed. However, probes with spring coil mechanical structures and probes fabricated using MEMS technology are difficult to integrate and configure in two dimensions to face the miniaturized and narrowed electrode pads on the surface of the packaging substrate.

[0010] The present invention addresses the aforementioned issues and aims to provide a probe device and its manufacturing method that enable reliable measurement and inspection in response to miniaturization and narrow pitch.

[0011] Solution for solving the problem

[0012] To address the aforementioned issues, the present invention provides a probe device having multiple probes for measuring and inspecting electrical characteristics. The probe device comprises: a probe device substrate; a first elastic material layer disposed on the substrate surface of the probe device substrate; multiple first wiring patterns formed on the upper surface of the first elastic material layer, each having a first wiring pad disposed at the periphery of the first elastic material layer and corresponding to one of the probes; a second elastic material layer stacked on top of the first elastic material layer; a second wiring pattern formed on top of the second elastic material layer and connected to one of the probes; and a through-hole penetrating the second elastic material layer to connect corresponding first wiring patterns and second wiring patterns, wherein the probes are formed protruding at a right angle to the upper surface of the second elastic material layer above the second wiring pattern.

[0013] As a preferred embodiment of the above scheme, a plurality of probes are centrally disposed above the second elastic material layer, the through holes are disposed at a distance from each other that is longer than the distance between the probes, and the second wiring pattern is formed such that the spacing between them is widened as they face each corresponding through hole.

[0014] As a preferred embodiment of the above-mentioned solution, the second elastic material layer is formed using a photosensitive polyimide.

[0015] As a preferred embodiment of the above scheme, the probe is formed of nickel or a nickel-cobalt alloy.

[0016] As a preferred embodiment of the above-mentioned solution, the probe device substrate is formed of glass.

[0017] As a preferred embodiment of the above scheme, the probe is disposed on the electrode pad portion of the second wiring pattern.

[0018] As a preferred embodiment of the above solution, a socket or flexible circuit board is connected to the first wiring pad portion.

[0019] As a preferred embodiment of the above scheme, a seed layer is formed on the substrate of the second wiring pattern.

[0020] As a preferred embodiment of the above scheme, a protective film is formed on the upper surface of the second elastic material layer, and the probe penetrates and protrudes through the protective film.

[0021] Another aspect of the present invention is a method for manufacturing a probe device, characterized by comprising: a step of forming a first elastic material layer on a substrate surface of a probe device substrate; a step of forming a plurality of first wiring patterns having first wiring pads disposed at the periphery of the first elastic material layer above the first elastic material layer; a step of stacking a second elastic material layer above the first elastic material layer; a step of forming a plurality of through holes respectively connected to the first wiring patterns in the second elastic material layer; a step of forming a plurality of second wiring patterns connected to each of the through holes above the second elastic material layer; and a step of forming a plurality of probes protruding in a direction perpendicular to the upper surface of the second elastic material layer by electroforming on the electrode pads of each of the second wiring patterns.

[0022] As a preferred embodiment of the above scheme, the plurality of probes are arranged in a concentrated manner above the second elastic material layer, the through holes are arranged at a distance from each other that is longer than the distance between the probes, and the second wiring pattern is formed such that the spacing between them is widened as they face each corresponding through hole.

[0023] As a preferred embodiment of the above-mentioned solution, the second elastic material layer is formed using a photosensitive polyimide.

[0024] As a preferred embodiment of the above scheme, the probe is formed of nickel or a nickel-cobalt alloy.

[0025] As a preferred embodiment of the above-mentioned solution, the probe device substrate is formed of glass.

[0026] As a preferred embodiment of the above solution, a socket or flexible circuit board is connected to the first wiring pad portion.

[0027] As a preferred embodiment of the above-mentioned solution, the method for manufacturing the probe device includes a step of forming a seed layer on the substrate of the second wiring pattern, wherein in the second wiring pattern forming step, an exposure opening is formed in the center of the electrode pad portion in the second wiring pattern to expose the seed layer, and in the probe forming step, electroforming is performed in such a way that the probe protrudes from the seed layer through the exposure opening.

[0028] As a preferred embodiment of the above solution, a protective film is integrally covered on the upper surface of the second elastic material layer, and the probe penetrates and protrudes through the protective film.

[0029] Invention Effects

[0030] The probe device and its manufacturing method according to the present invention have the effect of enabling reliable measurement and inspection in accordance with miniaturization and narrow spacing. Attached Figure Description

[0031] Figure 1 This is a top view showing the schematic structure of the probe device according to the first embodiment of the present invention.

[0032] Figure 2 This is a cross-sectional view showing the schematic structure of the probe device according to the first embodiment of the present invention.

[0033] Figure 3 This is a partial cross-sectional perspective view showing the main parts of the probe device according to the first embodiment of the present invention.

[0034] Figure 4-1 This is a process cross-sectional view showing the formation process of the first elastic material layer in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0035] Figure 4-2 This is a process cross-sectional view showing the process of forming the first wiring layer in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0036] Figure 4-3 This is a process cross-sectional view showing the step of forming a first wiring pattern in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0037] Figure 5-1 This is a process cross-sectional view showing the step of exposing a pattern of an opening for connecting a second elastic material layer in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0038] Figure 5-2 This is a cross-sectional view showing the process of forming a connection opening in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0039] Figure 6-1 This is a process cross-sectional view showing the through-hole formation process in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0040] Figure 6-2 This is a process cross-sectional view showing the exposure step of forming a resist pattern for forming a second wiring pattern in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0041] Figure 7-1 This is a cross-sectional view showing the state in which the resist pattern used to form the second wiring pattern has been developed during the manufacturing method of the probe device according to the first embodiment of the present invention.

[0042] Figure 7-2 This is a process cross-sectional view showing the step of forming a second wiring pattern in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0043] Figure 8-1 This is a process cross-sectional view showing the probe forming step in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0044] Figure 8-2 This is a process cross-sectional view showing the probe forming step (second electroforming step) in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0045] Figure 9-1 This is a process cross-sectional view showing the steps of removing photoresist and etching the seed layer in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0046] Figure 9-2 This is a process cross-sectional view showing the protective film formation step in the manufacturing method of the probe device according to the first embodiment of the present invention.

[0047] Figure 10 This is a top view showing the schematic structure of the probe device according to the second embodiment of the present invention.

[0048] Figure 11 This is a cross-sectional view showing the schematic structure of the probe device according to the second embodiment of the present invention. Detailed Implementation

[0049] The following description, based on the accompanying drawings, details the probe device and its manufacturing method according to embodiments of the present invention. However, it should be noted that the drawings are schematic, and the number of components, dimensions, ratios, and shapes differ from reality. Furthermore, the drawings also include portions with different dimensional relationships, ratios, and shapes.

[0050] In this embodiment, the substrate to be inspected can be various substrates such as packaging substrates with multiple bumps on the surface or back, printed wiring substrates, flexible substrates, multilayer wiring substrates, electrode plates for liquid crystal displays and organic EL displays, and film carriers. Furthermore, the probe device of this embodiment can also be used to measure the electrical characteristics of semiconductor devices called wafers or LSI chips.

[0051] [First Implementation Method]

[0052] (Simplified structure of the probe device)

[0053] use Figures 1 to 3 The structure, function, and effects of the probe device 20 according to the first embodiment of the present invention will be explained.

[0054] like Figures 1 to 3As shown, the probe device 20 of this embodiment includes a probe device substrate 1, a first elastic material layer 2, a first wiring pattern 3A, a second elastic material layer 4, a second wiring pattern 10, a through hole 6 penetrating the second elastic material layer 4, and a plurality of probes 12 centrally arranged in the center of the second elastic material layer 4.

[0055] The probe device substrate 1 is formed of a rectangular glass plate, for example, having a thickness of 500 μm. The size of the probe device substrate 1 is appropriately set according to the size of the substrate to be measured (not shown), the number of bumps, the arrangement of the bumps, etc.

[0056] The first elastic material layer 2 is formed of polyimide with cushioning and flexibility properties, and is integrally laminated on one side of the probe device substrate 1. That is, the first elastic material layer 2 is also rectangular in shape, just like the probe device substrate 1. The thickness of the first elastic material layer 2 can be set to, for example, 3.0 to 50.0 μm, but is not limited to this. In this embodiment, the thickness of the first elastic material layer 2 is set to 5 μm.

[0057] like Figure 2 As shown, on the upper surface of the first elastic material layer 2 (in Figure 2 Multiple first wiring patterns 3A are formed on the lower surface (the middle part is the bottom surface). These first wiring patterns 3A are formed of copper (Cu), and the film thickness is set, for example, to 6 μm. Figure 1 As shown, the first wiring pattern 3A is configured to extend along the X direction and be approximately parallel to each other, spaced apart near the periphery of one side of the first elastic material layer 2. Figure 1 As shown, a first wiring pad portion 3B with a planar rectangular shape is formed at the peripheral end in the X direction of these first wiring patterns 3A. In this embodiment, the first wiring pad portions 3B are staggered in the X direction along the Y direction, and are configured such that the first wiring pad portions 3B arranged in the Y direction form two columns. Therefore, the spacing between the first wiring pad portions 3B in each column along the Y direction is set to be larger. It should be noted that in this embodiment, the columns of the first wiring pad portions 3B are set to two columns, but the number of columns can be appropriately set according to the number of first wiring patterns 3A (the number of probes 12).

[0058] like Figure 2 As shown, in this embodiment, for the upper surface side of the first elastic material layer 2 (on Figure 2 (The lower surface side is shown in the image). A second elastic material layer 4 is stacked in a small area within the outline of the first elastic material layer 2. The length of the Y-direction side of the second elastic material layer 4 is set to be approximately the length of the Y-direction side of the first elastic material layer 2. For example... Figure 1 and Figure 2As shown, the end of the first wiring pattern 3A opposite to the first wiring pad portion 3B provided on the periphery side of the first elastic material layer 2 extends into the outline of the second elastic material layer 4.

[0059] In this embodiment, the second elastic material layer 4 is formed of photosensitive polyimide, and the film thickness is set to, for example, 10 μm. Figure 1 As shown, the aforementioned vias 6 are arranged along the Y direction near the periphery of the second elastic material layer 4 (the base layer of the protective film 13), close to the region on the first elastic material layer 2 where the first wiring pad portion 3B is disposed. The spacing between the vias 6 is set to be larger than the spacing between the probes 12 described later.

[0060] The connection opening 4A is formed by irradiating the second elastic material layer 4 with light through a photomask with a predetermined pattern and developing it in a manner that removes the area irradiated with light (see reference). Figure 5-2 The through-hole 6 is formed by non-electrolytic plating and Cu plating.

[0061] On the upper surface of the second elastic material layer 4 (in Figure 2 The lower surface (within the middle layer) has a second wiring pattern 10 formed on a base of seed layer 7. For example... Figure 1 and Figure 3 As shown, one end of each second wiring pattern 10 (including the seed layer 7) is connected to the upper end face of the through hole 6. The plurality of second wiring patterns 10 are arranged in a matrix-like manner, with the electrode pad portions 10A formed at their respective ends converging at the central portion of the second elastic material layer 4.

[0062] like Figure 2 and Figure 3 As shown, the probe 12 is disposed on the electrode pad portion 10A in a direction perpendicular to the second elastic material layer 4. Nickel or a nickel-cobalt alloy can be used in the probe 12; in this embodiment, a nickel-cobalt alloy is used. Specifically, as... Figure 9-1 As shown, the probe 12 is formed by electroforming by growing from the seed layer 7 exposed in the center of the electrode pad portion 10A through the exposed opening 11B.

[0063] The through holes 6 are arranged at a greater interval than the probes 12 are spaced apart, and the second wiring pattern 10 is formed such that the intervals are widened as they face each other toward their respective through holes 6.

[0064] A protective film 13 is formed above the second elastic material layer 4 on which the probe 12 is disposed. Preferably, a photoresist or a photosensitive polyimide is used as the protective film 13. In this embodiment, the thickness of the protective film 13 is set to, for example, 20 μm, but is not limited thereto. The probe 12 protrudes from this protective film 13.

[0065] like Figure 1 and Figure 2 As shown, in this embodiment, a flexible circuit board 14 is connected to the periphery of the first wiring pad portion 3B formed in the first elastic material layer 2. Figure 2 As shown, the flexible circuit board 14 has a connection pad portion 14A formed on the surface of one end, which is connected to the first wiring pad portion 3B, and a connection pad portion 14B is provided on the back side of the other end. This connection pad portion 14B can be used for connection to a tester, etc. It should be noted that a flexible circuit board 14 is used in this embodiment, but a socket can also be used.

[0066] In addition, in this embodiment, polyimide is used as the first elastic material layer 2 and the second elastic material layer 4, but other materials can be included such as polyamide, polyester, polyethylene, polyvinyl alcohol, polypropylene, polycarbonate, polystyrene, etc.

[0067] In this embodiment, a photosensitive polyimide is used as the second elastic material layer 4, but it can also be formed as follows: using a non-photosensitive polyimide, the opening 4A for the connection of the through hole 6 is processed by laser irradiation to make it open.

[0068] [The function and effects of this implementation method]

[0069] In this embodiment, the multiple probes 12 arranged in a matrix are spaced shortly according to the spacing between the bumps on the substrate being inspected. However, the second wiring pattern 10 connected to each probe 12 only needs to be arranged toward the upper surface of the through hole 6 with a long spacing, so even with the miniaturized and narrow-pitch probes 12, measurement and inspection can be performed reliably.

[0070] As described above, in the probe device 20 of this embodiment, even the probes 12, which are miniaturized and have a narrow pitch, can have a wider spacing between the first wiring patterns 3A, thus having the effect of avoiding wiring connection errors.

[0071] In this embodiment, the structure is as follows: a second elastic material layer 4 is stacked on top of the first elastic material layer 2, and the probe 12 protrudes from the second elastic material layer 4. Therefore, when the flexible circuit board 14 and the socket are connected, the flexible circuit board 14 and the socket do not protrude toward the probe 12, thereby improving the degree of freedom of wiring connection.

[0072] In this embodiment, by stacking the first elastic material layer 2 and the second elastic material layer 4, a buffering effect is achieved when the probe 12 contacts the substrate being measured, absorbing the reaction force from the substrate side. Therefore, in addition to improving the freedom of wiring connections, it also prevents damage to the probe 12 and the substrate side being measured. Thus, according to this embodiment, the stability and precision of the inspection can be improved without using a probe with a conventional mechanical structure that applies force via a spring coil.

[0073] That is, in this embodiment, the first elastic material layer 2 and the second elastic material layer 4 can absorb the deviation when there is a height deviation between the multiple bumps on the inspected substrate side, thus achieving high measurement accuracy and stable measurement.

[0074] In this embodiment, the through-hole 6 is formed by electroless plating and Cu plating, thus improving the sealing of the through-hole 6 relative to the second elastic material layer 4. Therefore, according to this embodiment, electrical stability can be ensured.

[0075] (Manufacturing method of probe device)

[0076] The following uses Figures 4-1 to 9-2 The manufacturing method of the probe device 20 in this embodiment will be explained.

[0077] (First elastic material layer formation process)

[0078] First, such as Figure 4-1 As shown, a first elastic material layer 2 formed of polyimide is coated on the probe device substrate 1 with a film thickness of, for example, 3.0 to 50 μm.

[0079] (First wiring pattern formation process)

[0080] Next, a pattern is formed using a photoresist (not shown), and the patterned photoresist is then applied to... Figure 4-3 The first wiring pattern 3A is electroformed into a film as shown. It should be noted that the process for forming this first wiring pattern can also be as follows: Figure 4-2 As shown, a first wiring layer 3 made of Cu is formed above the first elastic material layer 2, and a well-known photolithography technique is used to form a photoresist (not shown). Figure 4-3 The first wiring pattern 3A is shown. In the process of forming this first wiring pattern 3A, it is arranged at the periphery of the first elastic material layer 2. Figure 1 The pattern is formed in the manner shown in the first wiring pad 3B.

[0081] (Second elastic material layer formation process)

[0082] Next, as Figure 5-1 As shown, a second elastic material layer 4 is coated on top of a first elastic material layer 2 on which a first wiring pattern 3A is formed, with a film thickness of, for example, 10 μm. Photosensitive polyimide is used as the second elastic material layer 4.

[0083] (Through-hole forming process)

[0084] Then, as Figure 5-1 As shown, exposure is performed using photomask 5 to form the connection opening 4A for filling the through-hole 6. Since the second elastic material layer 4 is photosensitive, therefore... Figure 5-2 As shown, the exposed portion is removed by development, forming a connection opening 4A. It should be noted that the connection opening 4A forms a through hole 6, thus exposing the first wiring pattern 3A of the substrate.

[0085] Next, as Figure 6-1 As shown, non-electrolytic plating and Cu plating are performed, and a through hole 6 is formed in the connection opening 4A.

[0086] (Second wiring pattern formation process)

[0087] Next, as Figure 6-2 As shown, a seed layer 7 made of nickel-cobalt alloy is formed above the second elastic material layer 4, on which the through-holes 6 are formed, by electroless plating. It should be noted that nickel (Ni) can also be electroless plated as the seed layer 7. In addition to electroless plating, sputtering, vapor deposition, and other methods can also be used to form the seed layer 7.

[0088] Then, a positive photoresist 8 is applied and pre-baked above the seed layer 7, and exposed using a photomask 9. It should be noted that while a positive photoresist 8 is used in this embodiment, a negative photoresist can also be used. It should also be noted that, in the above exposure, the photomask 9 can be omitted, and the pattern can be dynamically created using direct-write exposure with a DMD (Digital Micromirror Device) or similar device.

[0089] Next, as Figure 7-1 As shown, development is performed to form a residual portion 8A of the photoresist 8. It should be noted that the portion where the residual portion 8A is not formed becomes the exposed portion 8B. Next, as... Figure 7-2 As shown, electroforming is performed to form a second wiring pattern 10 including electrode pad portion 10A, and the remaining portion 8A is removed.

[0090] (Probe forming process)

[0091] Next, as Figure 8-1As shown, after applying the photoresist 11, the photoresist 11 is exposed using a prescribed photomask, and then developed. As a result, the photoresist 11 forms a residual portion 11A and an exposed opening 11B that exposes the seed layer 7. Figure 8-2 As shown, in the electrode pad portion 10A of each second wiring pattern 10, a plurality of probes 12 protruding in a direction perpendicular to the upper surface of the second elastic material layer 4 are formed by electroforming a nickel-cobalt alloy. Then, as... Figure 9-1 As shown, photoresist 11 is removed.

[0092] It should be noted that, in this embodiment, the plurality of probes 12 are patterned in a manner concentrated on the central portion of the second elastic material layer 4, and the through holes 6 are spaced apart from each other by a distance longer than the distance between the probes 12. Furthermore, the second wiring pattern 10 is pre-patterned in a manner that widens the spacing between each other as they face their respective through holes 6.

[0093] (Protective film formation process)

[0094] Then, as Figure 9-2 As shown, a protective film 13 made of resist or photosensitive polyimide is formed using a known method. It should be noted that the protective film 13 can be formed from nitride films, oxide films, SOG (Spin-On-Glass) films, DLC (Diamond Like Carbon) films, etc., fabricated by CVD, and the protective film is formed by etchback in a manner that exposes the probe 12.

[0095] In the above-described method for manufacturing the probe device 20, a first elastic material layer 2 is formed on the probe device substrate 1, a second elastic material layer 4 is stacked on top of the first elastic material layer 2, and a probe 12 is formed from the second elastic material layer 4, thereby forming the probe device 20. However, it can also be manufactured by different methods. Specifically, a hole of the same shape as the probe 12 can be formed on a silicon substrate by etching, and the probe 12 can be formed on the hole by electroplating. Furthermore, the probe device 20 can also be manufactured by forming the second elastic material layer 4 and the first elastic material layer 2 in sequence and then bonding the probe device substrate 1 together. However, compared with the manufacturing method described in this embodiment, etching the silicon substrate and other processes complicate the process, therefore the manufacturing method of this embodiment is more preferred.

[0096] [Second Implementation]

[0097] Figure 10 and Figure 11This section illustrates a schematic structure of the probe device 20A according to the second embodiment of the present invention. Hereinafter, the probe device 20A of this embodiment is a structure that increases the number of probes 12 and connects four flexible circuit boards 14 in the probe device 20 of the first embodiment described above. In the structure of this embodiment, the parts that differ from the probe device 20 of the first embodiment described above will be explained, and descriptions of the same structures will be omitted.

[0098] In this embodiment, a first elastic material layer 2 is formed on the substrate surface of the probe device substrate 1, and rows of first wiring pad portions 3B extending in either the X or Y direction are formed near the four sides of the first elastic material layer 2. Figure 10 and Figure 11 As shown, the first wiring pattern 3A extending from the first wiring pad portion 3B of each column extends in a generally parallel manner toward the region of the second elastic material layer 4. The second elastic material layer 4 and the protective film 13 are disposed in the central region of the first elastic material layer 2.

[0099] Furthermore, through holes 6 are respectively provided near the four sides of the second elastic material layer 4, arranged along the X or Y direction. A plurality of probes 12 are centrally arranged in the center of the second elastic material layer 4. A second wiring pattern 10 is formed from each probe 12 toward the corresponding through hole 6. These plurality of second wiring patterns 10 are patterned in a manner that separates them from each other toward the through holes 6 to avoid mutual interference.

[0100] In this embodiment, even with a large number of probes 12, the second wiring pattern 10 can be dispersed and formed along the four sides of the upper surface of the second elastic material layer 4. Furthermore, the second wiring pattern 10 is connected to the corresponding first wiring pattern 3A via corresponding through-holes 6. Therefore, the spacing between the first wiring pads 3B of the first wiring pattern 3A can also be increased. Thus, in the probe device 20A of this embodiment, the miniaturization and narrow pitch of the probes 12 can be addressed, eliminating the need for probes with conventional mechanical structures that apply force via spring coils, thereby improving the stability and precision of the inspection.

[0101] [Other implementation methods]

[0102] The foregoing has described the first and second embodiments of the present invention, but the descriptions and drawings that constitute a part of the disclosure of the embodiments should not be construed as limiting the present invention. Based on this disclosure, those skilled in the art will understand various alternative embodiments, examples, and techniques employed.

[0103] For example, in the above-described embodiments, a structure is formed in which the flexible circuit board 14 is connected to the periphery of one or four sides, but a connection mechanism such as connecting the flexible circuit board 14 to the periphery of two or three sides is also possible.

[0104] Symbol explanation: 1. Probe device substrate 2 First elastic material layer 3 First wiring layer 3A First Wiring Pattern 3B First Wiring Pad Section 4 Second elastic material layer 4A Connection Opening 5. Photomask 6 through holes 7 Seed layer 8 Photoresist 8A Residual Section 8B Exposed area 9. Photomask 10 Second wiring pattern 10A Electrode Pad Section 10B Second Wiring Connection Pad Section 11 Photoresist 11A Remaining Section 11B Exposed opening 12 probes 13 Protective film 14 Flexible circuit board 14A, 14B Connecting Pads 20, 20A probe device

Claims

1. A probe device having multiple probes for measuring and inspecting electrical properties, characterized in that, The probe device includes: Probe device substrate; A first elastic material layer is disposed on the substrate surface of the probe device substrate; Multiple first wiring patterns are formed on the upper surface of the first elastic material layer, having first wiring pads disposed at the periphery of the first elastic material layer and corresponding to each of the probes; A second elastic material layer is stacked on top of the first elastic material layer; A second wiring pattern is formed on top of the second elastic material layer and connected to each of the probes; as well as A through-hole, which penetrates the second elastic material layer to connect the corresponding first wiring pattern and the second wiring pattern. The probe is formed above the second wiring pattern in a direction that protrudes at a right angle to the upper surface of the second elastic material layer.

2. The probe device according to claim 1, characterized in that, Multiple probes are concentrated on top of the second elastic material layer, the through holes are arranged at a distance from each other that is longer than the distance between the probes, and the second wiring pattern is formed such that the spacing between them is widened towards their respective through holes.

3. The probe device according to claim 1, characterized in that, The second elastic material layer is formed using a photosensitive polyimide.

4. The probe device according to claim 1, characterized in that, The probe is formed from nickel or a nickel-cobalt alloy.

5. The probe device according to claim 1, characterized in that, The probe device substrate is made of glass.

6. The probe device according to claim 1, characterized in that, The probe is positioned on the electrode pad portion of the second wiring pattern.

7. The probe device according to claim 1, characterized in that, A socket or flexible circuit board is connected to the first wiring pad.

8. The probe device according to claim 1, characterized in that, A seed layer is formed on the substrate of the second wiring pattern.

9. The probe device according to claim 1, characterized in that, A protective film is formed on the upper surface of the second elastic material layer, and the probe penetrates the protective film and protrudes.

10. A method for manufacturing a probe device, characterized in that, The method for manufacturing the probe device includes: The process of forming a first elastic material layer on the substrate surface of the probe device substrate; A process of forming a plurality of first wiring patterns having first wiring pads disposed at the periphery of the first elastic material layer above the first elastic material layer; The process of laminating a second elastic material layer on top of the first elastic material layer; The process of forming a plurality of through holes in the second elastic material layer that are respectively connected to the first wiring pattern; A second wiring pattern forming process in which a plurality of second wiring patterns connected to each of the through holes are formed above the second elastic material layer; and A probe forming process is performed in which multiple probes protruding in a direction perpendicular to the upper surface of the second elastic material layer are formed by electroforming on the electrode pad portion of each of the second wiring patterns.

11. The method for manufacturing the probe device according to claim 10, characterized in that, The probes are arranged in a concentrated manner above the second elastic material layer, the through holes are arranged at a distance from each other that is longer than the distance between the probes, and the second wiring pattern is formed such that the spacing between them is widened as they face each corresponding through hole.

12. The method for manufacturing the probe device according to claim 10, characterized in that, The second elastic material layer is formed using a photosensitive polyimide.

13. The method for manufacturing the probe device according to claim 10, characterized in that, The probe is formed from nickel or a nickel-cobalt alloy.

14. The method for manufacturing the probe device according to claim 10, characterized in that, The probe device substrate is made of glass.

15. The method for manufacturing the probe device according to claim 10, characterized in that, Connect a socket or flexible circuit board to the first wiring pad.

16. The method for manufacturing the probe device according to claim 10, characterized in that, The method for manufacturing the probe device includes a step of forming a seed layer on the substrate of the second wiring pattern. In the second wiring pattern forming process, an exposed opening is formed in the center of the electrode pad portion in the second wiring pattern to expose the seed layer. In the probe forming process, the probe is electroformed in such a way that it protrudes from the seed layer through the exposed opening.

17. The method for manufacturing the probe device according to claim 10, characterized in that, The probe penetrates and protrudes through the protective film covering the upper surface of the second elastic material layer.

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